[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

SE0700896L - Halvledarkomponent i kiselkarbid - Google Patents

Halvledarkomponent i kiselkarbid

Info

Publication number
SE0700896L
SE0700896L SE0700896A SE0700896A SE0700896L SE 0700896 L SE0700896 L SE 0700896L SE 0700896 A SE0700896 A SE 0700896A SE 0700896 A SE0700896 A SE 0700896A SE 0700896 L SE0700896 L SE 0700896L
Authority
SE
Sweden
Prior art keywords
silicon carbide
semiconductor component
additional layer
highly doped
present
Prior art date
Application number
SE0700896A
Other languages
English (en)
Other versions
SE532625C2 (sv
Inventor
Martin Domeij
Original Assignee
Transic Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Transic Ab filed Critical Transic Ab
Priority to SE0700896A priority Critical patent/SE532625C2/sv
Priority to US12/450,708 priority patent/US8829533B2/en
Priority to PCT/SE2008/050408 priority patent/WO2008127186A1/en
Priority to EP08741898A priority patent/EP2135284A4/en
Publication of SE0700896L publication Critical patent/SE0700896L/sv
Publication of SE532625C2 publication Critical patent/SE532625C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE0700896A 2007-04-11 2007-04-11 Halvledarkomponent i kiselkarbid SE532625C2 (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE0700896A SE532625C2 (sv) 2007-04-11 2007-04-11 Halvledarkomponent i kiselkarbid
US12/450,708 US8829533B2 (en) 2007-04-11 2008-04-10 Silicon carbide semiconductor device
PCT/SE2008/050408 WO2008127186A1 (en) 2007-04-11 2008-04-10 Silicon carbide semiconductor device
EP08741898A EP2135284A4 (en) 2007-04-11 2008-04-10 SEMICONDUCTOR ELEMENT FROM SILICON CARBIDE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0700896A SE532625C2 (sv) 2007-04-11 2007-04-11 Halvledarkomponent i kiselkarbid

Publications (2)

Publication Number Publication Date
SE0700896L true SE0700896L (sv) 2008-10-12
SE532625C2 SE532625C2 (sv) 2010-03-09

Family

ID=39864176

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0700896A SE532625C2 (sv) 2007-04-11 2007-04-11 Halvledarkomponent i kiselkarbid

Country Status (4)

Country Link
US (1) US8829533B2 (sv)
EP (1) EP2135284A4 (sv)
SE (1) SE532625C2 (sv)
WO (1) WO2008127186A1 (sv)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE537101C2 (sv) * 2010-03-30 2015-01-07 Fairchild Semiconductor Halvledarkomponent och förfarande för utformning av en struktur i ett målsubstrat för tillverkning av en halvledarkomponent
SE535157C2 (sv) * 2010-07-14 2012-05-02 Fairchild Semiconductor Konduktivitetsmodulering i en bipolär transistor i kiselkarbid
IT1401754B1 (it) * 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato e relativo metodo di fabbricazione.
SE1051137A1 (sv) 2010-10-29 2012-04-30 Fairchild Semiconductor Förfarande för tillverkning av en kiselkarbid bipolär transistor och kiselkarbid bipolär transistor därav
US20160277017A1 (en) * 2011-09-13 2016-09-22 Fsp Technology Inc. Snubber circuit
WO2013107508A1 (en) * 2012-01-18 2013-07-25 Fairchild Semiconductor Corporation Bipolar junction transistor with spacer layer and method of manufacturing the same
JP5924328B2 (ja) 2013-10-31 2016-05-25 トヨタ自動車株式会社 ツェナーダイオード
US10541300B2 (en) 2016-05-26 2020-01-21 General Electric Company Semiconductor device and method of making thereof
US11489069B2 (en) 2017-12-21 2022-11-01 Wolfspeed, Inc. Vertical semiconductor device with improved ruggedness
US10615274B2 (en) 2017-12-21 2020-04-07 Cree, Inc. Vertical semiconductor device with improved ruggedness
EP4186099A2 (en) * 2020-07-24 2023-05-31 Wolfspeed, Inc. Vertical sic semiconductor device with improved ruggedness

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3964089A (en) * 1972-09-21 1976-06-15 Bell Telephone Laboratories, Incorporated Junction transistor with linearly graded impurity concentration in the high resistivity portion of its collector zone
FR2543736B1 (fr) * 1983-03-31 1986-05-02 Thomson Csf Procede de fabrication d'un transistor de puissance a tenue en tension elevee a l'ouverture
US4945394A (en) * 1987-10-26 1990-07-31 North Carolina State University Bipolar junction transistor on silicon carbide
JPH0828423B2 (ja) * 1988-10-14 1996-03-21 日本電気株式会社 半導体記憶装置
JPH03203265A (ja) * 1989-12-28 1991-09-04 Sony Corp 半導体装置
DE69512101T2 (de) 1994-02-02 2000-04-27 Rohm Co. Ltd., Kyoto Leistungs-Bipolartransistor
US6348712B1 (en) * 1999-10-27 2002-02-19 Siliconix Incorporated High density trench-gated power MOSFET
JP2001177060A (ja) * 1999-12-14 2001-06-29 Nec Corp モノリシック集積回路装置及びその製造方法
US6455362B1 (en) * 2000-08-22 2002-09-24 Micron Technology, Inc. Double LDD devices for improved dram refresh
DE10126627A1 (de) * 2001-05-31 2002-12-12 Infineon Technologies Ag Halbleiterstruktur und Verfahren zur Verbesserung der ESD-Festigkeit derselben
US6849874B2 (en) * 2001-10-26 2005-02-01 Cree, Inc. Minimizing degradation of SiC bipolar semiconductor devices
US6982440B2 (en) * 2002-02-19 2006-01-03 Powersicel, Inc. Silicon carbide semiconductor devices with a regrown contact layer
US6815304B2 (en) * 2002-02-22 2004-11-09 Semisouth Laboratories, Llc Silicon carbide bipolar junction transistor with overgrown base region
DE10223951B4 (de) * 2002-05-29 2009-09-24 Infineon Technologies Ag Hochvoltdiode mit optimiertem Abschaltverfahren und entsprechendes Optimierverfahren
JP3940699B2 (ja) * 2003-05-16 2007-07-04 株式会社東芝 電力用半導体素子
JP2005167035A (ja) * 2003-12-03 2005-06-23 Kansai Electric Power Co Inc:The 炭化珪素半導体素子およびその製造方法
NZ552391A (en) * 2004-07-08 2010-04-30 Semisouth Lab Inc Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same
US7199442B2 (en) * 2004-07-15 2007-04-03 Fairchild Semiconductor Corporation Schottky diode structure to reduce capacitance and switching losses and method of making same
JP4768259B2 (ja) * 2004-12-21 2011-09-07 株式会社東芝 電力用半導体装置
JP4802542B2 (ja) * 2005-04-19 2011-10-26 株式会社デンソー 炭化珪素半導体装置
JP2006324465A (ja) * 2005-05-19 2006-11-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US20060273379A1 (en) * 2005-06-06 2006-12-07 Alpha & Omega Semiconductor, Ltd. MOSFET using gate work function engineering for switching applications
US7304334B2 (en) * 2005-09-16 2007-12-04 Cree, Inc. Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same
DE102005046707B3 (de) 2005-09-29 2007-05-03 Siced Electronics Development Gmbh & Co. Kg SiC-PN-Leistungsdiode
JP5002148B2 (ja) * 2005-11-24 2012-08-15 株式会社東芝 半導体装置
JP5147244B2 (ja) 2007-01-17 2013-02-20 関西電力株式会社 バイポーラ型半導体素子

Also Published As

Publication number Publication date
EP2135284A4 (en) 2012-04-25
US20100117097A1 (en) 2010-05-13
SE532625C2 (sv) 2010-03-09
EP2135284A1 (en) 2009-12-23
WO2008127186A1 (en) 2008-10-23
US8829533B2 (en) 2014-09-09

Similar Documents

Publication Publication Date Title
SE0700896L (sv) Halvledarkomponent i kiselkarbid
SE0500865L (sv) Halvledaranordning av kiselkarbid
WO2009019837A1 (ja) 炭化珪素半導体素子およびその製造方法
WO2007036456A3 (de) Sic-pn-leistungsdiode
EP4220743A3 (en) Light emitting diode
TW200727444A (en) Semiconductor devices and methods for forming an ESD protection device
WO2009050871A1 (ja) 半導体装置およびその製造方法
WO2014172159A8 (en) Defective p-n junction for backgated fully depleted silicon on insulator mosfet
TW200701454A (en) High voltage silicon carbide mos-bipolar devices having bi-directional blocking capabilities and methods of fabricating the same
TW200729491A (en) Silicon carbide semiconductor device and method for producing the same
TW200739750A (en) Lateral power devices with self-biasing electrodes
EP2610914A4 (en) SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE
SE0900780L (sv) Halvledaranordning av kiselkarbid och förfarande för framställning av sådan
WO2008093789A1 (ja) バイポーラ型半導体装置、その製造方法およびツェナー電圧の制御方法
SG11201807197PA (en) Support for a semiconductor structure
MY151538A (en) Light-emitting device with improved electrode structures
EP4254506A3 (en) Mix doping of a semi-insulating group iii nitride
TW200636255A (en) High voltage sensor device and method therefor
DE502005004646D1 (de) Solarzelle mit integrierter schutzdiode
TW200737488A (en) Low voltage triggering silicon controlled rectifier and circuit thereof
ATE520152T1 (de) Leistungshalbleiterbauelement
TW200729489A (en) Semiconductor devices, LDMOS transistors, and integrated circuits
TW200737308A (en) Semiconductor manufacturing equipment and heater
WO2012113818A3 (en) A power semiconductor device
WO2011151681A3 (ja) 半導体装置およびこれを用いた半導体リレー

Legal Events

Date Code Title Description
NUG Patent has lapsed