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SE0302594D0 - Vertical DMOS transistor device, integrated circuit, and fabrication method thereof - Google Patents

Vertical DMOS transistor device, integrated circuit, and fabrication method thereof

Info

Publication number
SE0302594D0
SE0302594D0 SE0302594A SE0302594A SE0302594D0 SE 0302594 D0 SE0302594 D0 SE 0302594D0 SE 0302594 A SE0302594 A SE 0302594A SE 0302594 A SE0302594 A SE 0302594A SE 0302594 D0 SE0302594 D0 SE 0302594D0
Authority
SE
Sweden
Prior art keywords
region
drain
gate
transistor device
dmos transistor
Prior art date
Application number
SE0302594A
Other languages
English (en)
Inventor
Andrej Litwin
Jan-Erik Mueller
Ted Johansson
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Priority to SE0302594A priority Critical patent/SE0302594D0/sv
Publication of SE0302594D0 publication Critical patent/SE0302594D0/sv
Priority to US10/941,783 priority patent/US20050067653A1/en
Priority to DE102004047002A priority patent/DE102004047002A1/de
Priority to CNB2004100831567A priority patent/CN100361315C/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SE0302594A 2003-09-30 2003-09-30 Vertical DMOS transistor device, integrated circuit, and fabrication method thereof SE0302594D0 (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE0302594A SE0302594D0 (sv) 2003-09-30 2003-09-30 Vertical DMOS transistor device, integrated circuit, and fabrication method thereof
US10/941,783 US20050067653A1 (en) 2003-09-30 2004-09-15 Vertical DMOS transistor device, integrated circuit, and fabrication method thereof
DE102004047002A DE102004047002A1 (de) 2003-09-30 2004-09-28 Vertikale DMOS- Transistor- Vorrichtung, integrierter Schaltkreis und Verfahren zur Herstellung dieser
CNB2004100831567A CN100361315C (zh) 2003-09-30 2004-09-29 垂直dmos晶体管装置、集成电路及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0302594A SE0302594D0 (sv) 2003-09-30 2003-09-30 Vertical DMOS transistor device, integrated circuit, and fabrication method thereof

Publications (1)

Publication Number Publication Date
SE0302594D0 true SE0302594D0 (sv) 2003-09-30

Family

ID=29246999

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0302594A SE0302594D0 (sv) 2003-09-30 2003-09-30 Vertical DMOS transistor device, integrated circuit, and fabrication method thereof

Country Status (4)

Country Link
US (1) US20050067653A1 (sv)
CN (1) CN100361315C (sv)
DE (1) DE102004047002A1 (sv)
SE (1) SE0302594D0 (sv)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070069309A1 (en) * 2005-09-26 2007-03-29 Richard Lindsay Buried well for semiconductor devices
JP5272410B2 (ja) * 2008-01-11 2013-08-28 富士電機株式会社 半導体装置およびその製造方法
DE102009021241A1 (de) * 2009-05-14 2010-11-18 Austriamicrosystems Ag Hochvolt-Transistor mit vergrabener Driftstrecke und Herstellungsverfahren
US20100314695A1 (en) * 2009-06-10 2010-12-16 International Rectifier Corporation Self-aligned vertical group III-V transistor and method for fabricated same
CN101950759A (zh) * 2010-08-27 2011-01-19 电子科技大学 一种Super Junction VDMOS器件
US8536648B2 (en) 2011-02-03 2013-09-17 Infineon Technologies Ag Drain extended field effect transistors and methods of formation thereof
JP5734725B2 (ja) * 2011-04-27 2015-06-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN102694027B (zh) * 2012-01-13 2015-08-19 西安龙腾新能源科技发展有限公司 超结器件的非平衡结终端结构
CN103779404B (zh) * 2014-01-24 2016-03-30 东南大学 P沟道注入效率增强型绝缘栅双极型晶体管
US9331196B2 (en) * 2014-10-02 2016-05-03 Nuvoton Technology Corporation Semiconductor device
GB2561390B (en) 2017-04-13 2020-03-11 Raytheon Systems Ltd Silicon carbide transistor
GB2561388B (en) 2017-04-13 2019-11-06 Raytheon Systems Ltd Silicon carbide integrated circuit
CN111627998B (zh) * 2019-02-27 2023-08-25 无锡华润微电子有限公司 一种半导体器件制备方法
CN114497173B (zh) * 2020-11-12 2023-10-31 苏州华太电子技术股份有限公司 应用于射频功率放大的双埋沟rfldmos器件

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
US4914051A (en) * 1988-12-09 1990-04-03 Sprague Electric Company Method for making a vertical power DMOS transistor with small signal bipolar transistors
US5071778A (en) * 1990-06-26 1991-12-10 National Semiconductor Corporation Self-aligned collector implant for bipolar transistors
US5171699A (en) * 1990-10-03 1992-12-15 Texas Instruments Incorporated Vertical DMOS transistor structure built in an N-well CMOS-based BiCMOS process and method of fabrication
US5386136A (en) * 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
US5854099A (en) * 1997-06-06 1998-12-29 National Semiconductor Corporation DMOS process module applicable to an E2 CMOS core process
US6249025B1 (en) * 1997-12-29 2001-06-19 Intel Corporation Using epitaxially grown wells for reducing junction capacitances
EP0936674B1 (en) * 1998-02-10 2006-04-26 STMicroelectronics S.r.l. Integrated circuit comprising a VDMOS transistor protected against overvoltages between source and gate
TW428253B (en) * 1998-04-20 2001-04-01 United Microelectronics Corp Buried channel vertical doubly-diffused metal oxide semiconductor device
US6072216A (en) * 1998-05-01 2000-06-06 Siliconix Incorporated Vertical DMOS field effect transistor with conformal buried layer for reduced on-resistance
SG165138A1 (en) * 2000-07-12 2010-10-28 Inst Of Microelectronics A semiconductor device
SE519382C2 (sv) * 2000-11-03 2003-02-25 Ericsson Telefon Ab L M Integrering av självinriktade MOS-högspänningskomponenter samt halvledarstruktur innefattande sådana
US6765247B2 (en) * 2001-10-12 2004-07-20 Intersil Americas, Inc. Integrated circuit with a MOS structure having reduced parasitic bipolar transistor action

Also Published As

Publication number Publication date
CN100361315C (zh) 2008-01-09
DE102004047002A1 (de) 2005-08-04
US20050067653A1 (en) 2005-03-31
CN1612356A (zh) 2005-05-04

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