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RU96119670A - Avalanche Photodiode - Google Patents

Avalanche Photodiode

Info

Publication number
RU96119670A
RU96119670A RU96119670/25A RU96119670A RU96119670A RU 96119670 A RU96119670 A RU 96119670A RU 96119670/25 A RU96119670/25 A RU 96119670/25A RU 96119670 A RU96119670 A RU 96119670A RU 96119670 A RU96119670 A RU 96119670A
Authority
RU
Russia
Prior art keywords
avalanche photodiode
substrate
semiconductor
junction
semiconductor layer
Prior art date
Application number
RU96119670/25A
Other languages
Russian (ru)
Other versions
RU2102821C1 (en
Inventor
З.Я. оглы Садыгов
Original Assignee
З.Я. оглы Садыгов
Filing date
Publication date
Application filed by З.Я. оглы Садыгов filed Critical З.Я. оглы Садыгов
Priority to RU96119670A priority Critical patent/RU2102821C1/en
Priority claimed from RU96119670A external-priority patent/RU2102821C1/en
Application granted granted Critical
Publication of RU2102821C1 publication Critical patent/RU2102821C1/en
Publication of RU96119670A publication Critical patent/RU96119670A/en

Links

Claims (1)

Лавинный фотодиод, включающий полупроводниковую подложку, на поверхности которой расположен полупроводниковый слой, образующий с подложкой p-n-переход, отличающийся тем, что на границе подложки с полупроводниковым слоем сформированы не менее двух полупроводниковых областей с повышенной проводимостью по отношению к подложке, причем крутизна p-n-перехода внутри полупроводниковых областей больше, чем вне их.An avalanche photodiode, including a semiconductor substrate, on the surface of which there is a semiconductor layer forming a pn junction with the substrate, characterized in that at least two semiconductor regions with increased conductivity with respect to the substrate are formed at the interface of the substrate with the semiconductor layer, and the slope of the pn junction inside the semiconductor regions more than outside them.
RU96119670A 1996-10-10 1996-10-10 Avalanche photodiode RU2102821C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU96119670A RU2102821C1 (en) 1996-10-10 1996-10-10 Avalanche photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU96119670A RU2102821C1 (en) 1996-10-10 1996-10-10 Avalanche photodiode

Publications (2)

Publication Number Publication Date
RU2102821C1 RU2102821C1 (en) 1998-01-20
RU96119670A true RU96119670A (en) 1998-03-27

Family

ID=20186186

Family Applications (1)

Application Number Title Priority Date Filing Date
RU96119670A RU2102821C1 (en) 1996-10-10 1996-10-10 Avalanche photodiode

Country Status (1)

Country Link
RU (1) RU2102821C1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2316848C1 (en) 2006-06-01 2008-02-10 Садыгов Зираддин Якуб-оглы Microchannel avalanche photodiode
RU2331140C1 (en) * 2007-01-09 2008-08-10 Валентин Николаевич Самойлов Heteroelectric photo cell
US8742543B2 (en) 2007-02-20 2014-06-03 Ziraddin Yagub-Ogly Sadygov Microchannel avalanche photodiode (variants)
ITTO20080045A1 (en) 2008-01-18 2009-07-19 St Microelectronics Srl PLACE OF PHOTODIODS OPERATING IN GEIGER MODES MUTUALLY INSULATED AND RELATIVE PROCESS OF MANUFACTURING
ITTO20080046A1 (en) 2008-01-18 2009-07-19 St Microelectronics Srl PLACE OF PHOTODIODS OPERATING IN GEIGER MODES MUTUALLY INSULATED AND RELATIVE PROCESS OF MANUFACTURING
EP2139045A4 (en) * 2008-04-09 2010-05-05 Ooo Novye Energet Tehnologii Electromagnetic emission converter
IT1392366B1 (en) 2008-12-17 2012-02-28 St Microelectronics Rousset OPERATING PHOTODIODO IN GEIGER MODE WITH INTEGRATED AND CONTROLLABLE SUPPRESSION RESISTOR, PHOTODIUM RING AND RELATIVE PROCESS OF PROCESSING
WO2010080048A1 (en) 2009-01-11 2010-07-15 Popova Elena Viktorovna Semiconductor geiger mode microcell photodiode (variants)
IT1393781B1 (en) 2009-04-23 2012-05-08 St Microelectronics Rousset OPERATING PHOTODIODO IN GEIGER MODE WITH INTEGRATED AND CONTROLLABLE JFET EFFECT SUPPRESSION RESISTOR, PHOTODIUM RING AND ITS PROCESS OF PROCESSING
IT1399690B1 (en) 2010-03-30 2013-04-26 St Microelectronics Srl AVALANCHE PHOTODIODO OPERATING IN GEIGER MODE WITH HIGH SIGNAL NOISE REPORT AND RELATIVE MANUFACTURING PROCEDURE
JP5808592B2 (en) 2011-07-04 2015-11-10 浜松ホトニクス株式会社 Reference voltage determination method and recommended operating voltage determination method
RU2650417C1 (en) * 2017-04-25 2018-04-13 Зираддин Ягуб оглы Садыгов Semiconductor avalanche photodetector

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