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RU2018124345A - Способ и система для сенсорного обнаружения - Google Patents

Способ и система для сенсорного обнаружения Download PDF

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Publication number
RU2018124345A
RU2018124345A RU2018124345A RU2018124345A RU2018124345A RU 2018124345 A RU2018124345 A RU 2018124345A RU 2018124345 A RU2018124345 A RU 2018124345A RU 2018124345 A RU2018124345 A RU 2018124345A RU 2018124345 A RU2018124345 A RU 2018124345A
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nanostructure
gate electrode
functional fragment
redox
fragment
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RU2018124345A
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RU2018124345A3 (ru
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Фернандо ПАТОЛЬСКИ
Вадим КРИВИТСКИ
Марина ЗВЕРЖИНЕТСКИ
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Рамот Ат Тель-Авив Юниверсити Лтд.
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Publication of RU2018124345A3 publication Critical patent/RU2018124345A3/ru

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61BDIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00Measuring for diagnostic purposes; Identification of persons
    • A61B5/145Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value ; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid or cerebral tissue
    • A61B5/1468Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value ; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid or cerebral tissue using chemical or electrochemical methods, e.g. by polarographic means
    • A61B5/1473Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value ; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid or cerebral tissue using chemical or electrochemical methods, e.g. by polarographic means invasive, e.g. introduced into the body by a catheter
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61BDIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00Measuring for diagnostic purposes; Identification of persons
    • A61B5/48Other medical applications
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    • AHUMAN NECESSITIES
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    • A61BDIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00Measuring for diagnostic purposes; Identification of persons
    • A61B5/68Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient
    • A61B5/6801Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient specially adapted to be attached to or worn on the body surface
    • A61B5/683Means for maintaining contact with the body
    • A61B5/6832Means for maintaining contact with the body using adhesives
    • A61B5/6833Adhesive patches
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61BDIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00Measuring for diagnostic purposes; Identification of persons
    • A61B5/68Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient
    • A61B5/6846Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient specially adapted to be brought in contact with an internal body part, i.e. invasive
    • A61B5/6847Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient specially adapted to be brought in contact with an internal body part, i.e. invasive mounted on an invasive device
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/5005Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving human or animal cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/117Shapes of semiconductor bodies
    • H10D62/118Nanostructure semiconductor bodies
    • H10D62/119Nanowire, nanosheet or nanotube semiconductor bodies
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    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
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    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/484Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221Carbon nanotubes
    • H10K85/225Carbon nanotubes comprising substituents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors

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Claims (23)

1. Система для обнаружения изменений электрического свойства, содержащая
сенсорный элемент, содержащий транзистор, имеющий электрод затвора и полупроводниковую наноструктуру, соединяющую электрод истока с электродом затвора и модифицированную функциональным фрагментом, ковалентно прикрепленным к ней; а также
источник напряжения, подключенный к указанному электроду затвора;
контроллер, выполненный с возможностью управления напряжением затвора, приложенным указанным источником напряжения к указанному электроду затвора, таким как обратная окислительно-восстановительная реакция, возникающая, когда указанный фрагмент контактирует с редокс-активным веществом, а также
схему для обнаружения изменений электрического свойства указанной наноструктуры.
2. Система по п. 1, в которой указанный функциональный фрагмент представляет собой редокс-активный фрагмент.
3. Система по п. 1 или 2, в которой указанный функциональный фрагмент содержит по меньшей мере одну функциональную группу, способную к обратимому изменению степени окисления или состояния окисления по меньшей мере одного из ее атомов.
4. Система по п. 1 или 2, в которой указанный функциональный фрагмент содержит хинон.
5. Система по п. 1 или 2, в которой указанный функциональный фрагмент содержит ароматический хинон.
6. Система по п. 1 или 2, в которой указанный функциональный фрагмент представляет собой или содержит функциональную группу, выбранную из группы, состоящей из хинона, бензохинона, антрахинона и фенантренхинона, каждый из которых является замещенным или незамещенным.
7. Система по п. 1 или 2, в которой указанное электрическое свойство предусматривает плотность электронов или заряда на поверхности указанной наноструктуры.
8. Система по п. 1 или 2, в которой указанная наноструктура представляет собой нанопроволоку.
9. Система по п. 1 или 2, в которой указанная полупроводниковая наноструктура содержит кремний.
10. Система по п. 1 или 2, в которой указанный сенсорный элемент содержит по меньшей мере один дополнительный транзистор, имеющий наноструктуру, модифицированную нередокс-активным фрагментом, причем указанная схема детектора выполнена с возможностью вычитания сигналов, принятых от указанной наноструктуры, модифицированной указанным редокс-активным фрагментом, из сигналов, полученных от указанной наноструктуры, модифицированных указанным нередокс-активным фрагментом.
11. Система по п. 1 или 2, содержащаяся в наклейке, прикрепляемой к коже.
12. Система по п. 1 или 2, содержащаяся в имплантируемом в живое тело корпусе.
13. Способ сенсорного обнаружения метаболической активности в живом организме, предусматривающий
контактирование живого организма с сенсорным элементом, содержащим транзистор с электродом затвора и полупроводниковой наноструктурой, соединяющей электрод истока с электродом затвора, и модифицированный функциональным фрагментом, ковалентно прикрепленным к ней;
обнаружение изменений электрического свойства указанной наноструктуры в результате окислительно-восстановительной реакции, возникающей во время указанного контакта; а также
подача напряжения затвора на указанный электрод затвора для отмены указанной окислительно-восстановительной реакции.
14. Способ по п. 13, в котором указанное напряжение затвора выбрано так, чтобы поддерживать обычную постоянную популяцию указанного функционального фрагмента на указанной наноструктуре.
15. Способ по любому из пп. 13, 14, в котором указанное напряжение затвора является постоянным.
16. Способ по любому из пп. 13, 14, в котором указанное напряжение затвора составляет от приблизительно -3 вольт до приблизительно +3 вольт.
RU2018124345A 2015-12-09 2016-12-08 Способ и система для сенсорного обнаружения RU2018124345A (ru)

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US201562264944P 2015-12-09 2015-12-09
US201562264913P 2015-12-09 2015-12-09
US62/264,913 2015-12-09
US62/264,944 2015-12-09
PCT/IL2016/051320 WO2017098518A1 (en) 2015-12-09 2016-12-08 Method and system for sensing

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RU2018124345A3 RU2018124345A3 (ru) 2020-02-25

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EP (2) EP3386911B1 (ru)
JP (2) JP2018538535A (ru)
KR (2) KR20180091053A (ru)
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