KR980011974A - Semiconductor high frequency RIE system Dry type high frequency electric power transmission device - Google Patents

Abstract

The present invention relates to a high-frequency power transmission device of a semiconductor high frequency RIE type dry type. The present invention relates to a high-frequency power transmission device of a semiconductor high-frequency RIE type dry type device in which a lower manifold of a match network, a strap, and a nucleus soda are electrically connected to transmit a high-frequency power of a high- The strap is fixedly connected to the lower manifold on the one hand and is connected to the match network by an electric cable. The electric cable can be freely stretched and interlocked within a certain range, and both ends of the strap and the match network As shown in FIG. Therefore, there is an advantage that the generation of internal foreign substances is suppressed in the etching process and the contact resistance is reduced, thereby minimizing the occurrence of the process abnormality.

Description

Semiconductor high frequency RIE system Dry type high frequency electric power transmission device

[0001] The present invention relates to a high-frequency power transmission device for a semiconductor high-frequency RIE type dry type device, and more particularly, to a high frequency power transmission device for a high frequency electric power generating device using a high frequency electric power generating device using Hexode which supplies high frequency electric power to the etching process Frequency RIE-type dry type high-frequency power transmission device. The etching process, which is most frequently performed in a semiconductor device manufacturing process, is divided into wet etching and dry etching according to the method, and dry etching is usually performed in a plasma environment.

The dry etching method also includes a chemical etching method in which a specific layer of a wafer is chemically reacted with a plasma formed by simply forming a pattern to form a pattern, and a method of forming a pattern on a wafer There is a semi-physical etching method that reacts to the layer. At this time, the electrons have the properties of isotropic etching and the latter have the properties of the anisotropic etching.

A high frequency RIE dry etching method is widely used as a semi-physical etching method. This is an etching method that raises the energy of plasma particles by using high-frequency power and increases the efficiency and anisotropy of the etching process by using the energy. Therefore, in the high frequency RIE type dry etching apparatus, a high frequency electric power transfer device for transmitting a high frequency electric power to a hexode for applying a high frequency electric power to plasma particles through a wafer in an etching process is required in a high frequency electric power generating device.

1 is a view showing a conventional high-frequency power transmission device of a semiconductor high-frequency RIE type dry type device. The lower manifold 12 is formed under the hex saw 11 and the strap 13 is wrapped around the lower end of the lower manifold 12. [ One end of the strap 13 is in contact with the cylinder 14 so that the cylinder is moved so as to be closed when transmitting high-frequency power to the process chamber and repeatedly operated when ventilating the process chamber.

However, in the conventional high-frequency power transmission system of the high-frequency RIE type dry type, in order to transfer the wafers, foreign matter is generated due to friction between the lower manifold of the hexoid and the strap during rotation of the hexoid, There is a problem that a narrow gap is created by the repeated operation of opening and closing and the contact resistance is increased. That is, as the contact resistance increases, the high-frequency power to be applied becomes high and becomes unstable, thereby causing a problem that the wafer in the process is triggered by an abnormality.

An object of the present invention is to provide a high-frequency power transmission device of a semiconductor high-frequency RIE type dry etching type in which the generation of internal foreign matter is suppressed and the contact resistance is reduced by minimizing the transfer of high- There is.

FIG. 1 is a view showing a conventional high-frequency power transmission device of a semiconductor high-frequency RIE type dry type.

FIG. 2 is a view showing an example of a high-frequency power transmission device of a semiconductor high-frequency RIE type dry type device according to the present invention.

DESCRIPTION OF THE REFERENCE NUMERALS

11: Hexode 12: Manifold (lower manifold)

13, 23: Strap 14: Cylinder

24: electric cable 25: match network

26: Fixed point

In order to accomplish the above object, the present invention provides a high-frequency power generating device for a high-frequency power generating device, comprising: a high-frequency RIE type dry-type high-frequency power generating device in which a lower manifold of a match network, a strap and a hexoid are electrically connected to transmit high- The power transmission device according to claim 1, wherein the strap is fixedly connected to the lower manifold on the one hand, and is connected to the match network by an electric cable. The electric cable can be freely stretched and interlocked within a certain range, And is fixed to a predetermined portion of the strap and the match network. The electrical cable may be provided to allow the cable to be stretched like a spring, or to be sufficiently long to maintain electrical contact during rotation of the hexoid.

With regard to the cable, which is an electrical connecting member connecting the strap and the match network in the present invention, it is also possible to expect a deformation to connect the match network with the lower manifold of the direct heather without the strap. Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a diagram showing an example of a high-frequency power transmission device for a dry type semiconductor high frequency RIE system according to the present invention. The strap 23 is fixed around the lower manifold 12 so that the lower manifold and the strap 23 can be fixed during operation of the hexods 11 according to the process, So as to prevent the generation of foreign matter due to the friction of the motor. The strap 23 and the match network 25 are connected by a flexible electrical cable 24 to enable movement of the lower manifold 12 and the electrical cable 24 is connected to the fixed point of the strap 23 26) by bolts or welding to prevent unstable contact resistance and thus process anomalies.

Therefore, according to the present invention, it is advantageous to suppress the generation of internal foreign substances in the etching process and reduce the contact resistance, thereby minimizing the occurrence of process abnormalities, thereby increasing the facility utilization rate and the wafer acquisition rate.

While the invention has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (1)

A high-frequency power transmission device of a semiconductor high-frequency RIE type dry-type high-frequency power transmission device in which a matching network, a strap, and a lower manifold of a hexoid are electrically connected to transmit a high-frequency power of a high- And is connected to the match network via an electric cable. The electric cable can be freely stretched and interlocked within a certain range, and both ends of the electric cable can be connected to a predetermined portion of the strap and the match network Wherein the high-frequency power transmission device is a semiconductor high-frequency RIE type dry type high-frequency power transmission device. ※ Note: It is disclosed by the contents of the first application.