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KR980003843A - Method of forming fine pattern of semiconductor device - Google Patents

Method of forming fine pattern of semiconductor device Download PDF

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Publication number
KR980003843A
KR980003843A KR1019960023240A KR19960023240A KR980003843A KR 980003843 A KR980003843 A KR 980003843A KR 1019960023240 A KR1019960023240 A KR 1019960023240A KR 19960023240 A KR19960023240 A KR 19960023240A KR 980003843 A KR980003843 A KR 980003843A
Authority
KR
South Korea
Prior art keywords
photoresist pattern
forming
etching
semiconductor device
resist
Prior art date
Application number
KR1019960023240A
Other languages
Korean (ko)
Other versions
KR100197664B1 (en
Inventor
복철규
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960023240A priority Critical patent/KR100197664B1/en
Publication of KR980003843A publication Critical patent/KR980003843A/en
Application granted granted Critical
Publication of KR100197664B1 publication Critical patent/KR100197664B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 반도체 소자의 미세패턴 형성방법에 관한 것으로, 특히 반도체 소자 제조공정중, 습식에칭 또는 건식식각 공정시 포토레지스트의 식각 마스크로서의 역할을 충분히 수행할 수 있도록또는이온을 소정의 조건하에서 포토레지스트 패턴으로 주입시킴에 의해 포토레지스트 표면을 경화시킴으로써 과도식각에 의해 패턴이 서로 붙는 패턴 브릿지현상을 막을 수 있고, 또한 포토레지스트 패턴의 두께를 낮출 수 있음으로 패턴형성의 해상도 및 촛점심도를 향상시킬 수 있다.The present invention relates to a method of forming a micropattern of a semiconductor device, and in particular, to perform a role as an etching mask of a photoresist during a wet etching or a dry etching process in a semiconductor device manufacturing process. or By implanting ions into the photoresist pattern under predetermined conditions, the surface of the photoresist can be cured to prevent the pattern bridge phenomenon that the patterns adhere to each other by excessive etching, and also to reduce the thickness of the photoresist pattern. Resolution and depth of focus can be improved.

Description

반도체 소자의 미세패턴 형성방법Method of forming fine pattern of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2a도 내지 제2c도는 본 발명의 방법에 따른 반도체 소자의 패턴 형성공정 단계의 단면도.2A to 2C are cross-sectional views of the step of forming a pattern of a semiconductor device according to the method of the present invention.

제3도는 본 발명의 방법에 따라 경화된 포토레지스트의 단면도.3 is a cross-sectional view of a photoresist cured according to the method of the present invention.

Claims (6)

웨이퍼 기판 상부에 피에칭막을 형성하는 단계와, 상기 피에칭막 상부에 포토레지스트 패턴을 형성하는 단계와, 상기 포토레지스트 패턴 상부에또는이온을 소정의 조건에서 주입시키는 단계와, 상기 이온주입에 의해 생성된 레지스트 표면의 경화층을 식각 마스크로 하여 하부의 피에칭막을 식각하는 단계와, 상기 잔류 포토레지스트 패턴을 제거하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 미세패턴 형성방법.Forming an etching target layer on the wafer substrate, forming a photoresist pattern on the etching target layer, and forming an upper portion on the photoresist pattern or Implanting ions under a predetermined condition, etching a lower etching target layer using the cured layer on the surface of the resist generated by the ion implantation as an etching mask, and removing the residual photoresist pattern. Method for forming a fine pattern of a semiconductor device, characterized in that. 제1항에 있어서 상기 피에칭막은 산화막 또는 폴리실리콘막인 것을 특징으로 하는 반도체 소자의 미세패턴 형성방법.The method of claim 1, wherein the etched film is an oxide film or a polysilicon film. 제1항에 있어서 상기 포토레지스트 패턴 제거공정시 경화층은 산소 또는 수소 플라즈마를 사용해 RIE방식으로 제거하고, 경화되지 않은 레지스트는 산소와 질소의 혼합가스에 의한 플라즈마를 사용해 다운스트림 방식으로 식각하여 제거하는 것을 특징으로 하는 반도체 소자의 미세패턴 형성방법.The method of claim 1, wherein in the photoresist pattern removal process, the cured layer is removed by RIE using oxygen or hydrogen plasma, and the uncured resist is removed by etching downstream using a plasma of a mixed gas of oxygen and nitrogen. Method for forming a fine pattern of a semiconductor device, characterized in that. 제1항에 있어서 상기 포토레지스트 패턴의 경화층은 RIE 또는 ECR, ICP 등의 모든 플라즈마 소스에 대해 식각되지 않는 것을 특징으로 하는 반도체 소자의 미세패턴 형성방법.The method of claim 1, wherein the cured layer of the photoresist pattern is not etched with respect to all plasma sources such as RIE, ECR, and ICP. 제4항에 있어서 상기 플라즈마 소스는 산소, 플루오린계, 클로린계의 플라즈마인 것을 특징으로 하는 반도체 소자의 미세패턴 형성방법.The method of claim 4, wherein the plasma source is oxygen, fluorine-based, or chlorine-based plasmas. 제1항에 있어서 상기 포토레지스트 패턴을 경화시키는 방법은 노블락(Novolac)수지를 사용하는 G선 및 I선 레지스트 및 PHS를 사용하는 원자외선 레지스트, 그리고 전자선 레지스트에 적용되는 것을 특징으로 하는 반도체 소자의 미세패턴 형성방법.The method of claim 1, wherein the method of curing the photoresist pattern is applied to a G-ray and I-ray resist using Novolac resin and an ultraviolet ray resist using PHS, and an electron beam resist. Fine pattern formation method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019960023240A 1996-06-24 1996-06-24 Method for forming fine pattern of semiconductor device KR100197664B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960023240A KR100197664B1 (en) 1996-06-24 1996-06-24 Method for forming fine pattern of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960023240A KR100197664B1 (en) 1996-06-24 1996-06-24 Method for forming fine pattern of semiconductor device

Publications (2)

Publication Number Publication Date
KR980003843A true KR980003843A (en) 1998-03-30
KR100197664B1 KR100197664B1 (en) 1999-06-15

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100291332B1 (en) * 1998-12-29 2001-07-12 윤종용 Manufacturing method of semiconductor device
KR100338940B1 (en) * 1999-11-18 2002-05-31 박종섭 Manufacturing method for contact hole in semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100291332B1 (en) * 1998-12-29 2001-07-12 윤종용 Manufacturing method of semiconductor device
KR100338940B1 (en) * 1999-11-18 2002-05-31 박종섭 Manufacturing method for contact hole in semiconductor device

Also Published As

Publication number Publication date
KR100197664B1 (en) 1999-06-15

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