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KR970013058A - Method of forming titanium nitride film of semiconductor device - Google Patents

Method of forming titanium nitride film of semiconductor device Download PDF

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Publication number
KR970013058A
KR970013058A KR1019950025867A KR19950025867A KR970013058A KR 970013058 A KR970013058 A KR 970013058A KR 1019950025867 A KR1019950025867 A KR 1019950025867A KR 19950025867 A KR19950025867 A KR 19950025867A KR 970013058 A KR970013058 A KR 970013058A
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KR
South Korea
Prior art keywords
titanium nitride
nitride film
semiconductor device
plasma
forming
Prior art date
Application number
KR1019950025867A
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Korean (ko)
Other versions
KR100187658B1 (en
Inventor
박홍락
김정태
Original Assignee
김주용
현대전자산업주식회사
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Publication date
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Priority to KR1019950025867A priority Critical patent/KR100187658B1/en
Publication of KR970013058A publication Critical patent/KR970013058A/en
Application granted granted Critical
Publication of KR100187658B1 publication Critical patent/KR100187658B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체 소자의 티타늄나이트라이드막 형성방법에 관한 것으로, 막의 질을 향상시키며, 전기적 비저항값을 감소시키기 위하여 티타늄나이트라이드(TiN)를 다수번 분할하여 증착하며, 각 증착단계후 플라즈마(Plasma) 처리를 실시하므로써 소자의 신뢰성을 향상시킬 수 있도록 한 반도체 소자의 티타늄나이트라이드막 형성방법에 관한 것이다.The present invention relates to a method for forming a titanium nitride film of a semiconductor device, and to deposit and divide titanium nitride (TiN) a plurality of times in order to improve the quality of the film and to reduce the electrical resistivity value, and after each deposition step, plasma (Plasma) The present invention relates to a method for forming a titanium nitride film of a semiconductor device in which the reliability of the device can be improved by carrying out the same process.

Description

반도체 소자의 티타늄나이트라이드막 형성방법Method of forming titanium nitride film of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1C도는 본 발명에 따른 반도체 소자의 티타늄나이트라이드막 형성방법을 설명하기 위한 소자의 단면도.1C is a cross-sectional view of a device for explaining a method of forming a titanium nitride film of a semiconductor device according to the present invention.

Claims (5)

반도체 소자의 티타늄나이트라이드막 형성방법에 있어서, 소정의 공정을 거친 실리콘기판상에 화학 기상증착방법으로 티타늄나이트라이드를 소정의 두께로 증착하는 제1단계와, 상기 단계로부터 질소 및 수소가 혼합된 가스를 이용한 1차 플라즈마 처리를 실시하는 제2단계와, 상기 단계로부터 질소 가스를 이용한 2차 플라즈마 처리를 실시하는 제3단계와, 상기 단계로부터 상기 실리콘기판상에 원하는 두께의 티타늄나이트라이드막이 형성될 때까지 상기 제1 내지 제3 단계를 반복 실시하는 것을 특징으로 하는 반도체 소자의 티타늄나이트라이드막 형성방법.A method of forming a titanium nitride film of a semiconductor device, comprising: a first step of depositing titanium nitride at a predetermined thickness by chemical vapor deposition on a silicon substrate which has been subjected to a predetermined process; A second step of performing a primary plasma treatment using gas, a third step of performing a secondary plasma treatment using nitrogen gas from the step, and a titanium nitride film having a desired thickness on the silicon substrate is formed from the step The method of forming a titanium nitride film of a semiconductor device, characterized in that to repeat the first to third steps until it is. 제1항에 있어서, 상기 1차 및 2차 플라즈마 처리시 사용되는 플라즈마는 300 내지 600℃의 온도, 0.5 내지 10Torr의 압력 및 150 내지 700W의 고주파전력에 의해 발생되는 것을 특징으로 하는 반도체 소자의 티타늄나이트라이드막 형성방법.The titanium of the semiconductor device of claim 1, wherein the plasma used in the first and second plasma treatments is generated by a temperature of 300 to 600 ° C, a pressure of 0.5 to 10 Torr, and a high frequency power of 150 to 700 W. Nitride film formation method. 제1 또는 제2항에 있어서, 상기 1차 및 2차 플라즈마 처리는 각각 10 내지 100초간 실시되는 것을 특징으로 하는 반도체 소자의 티타늄나이트라이드막 형성방법.The method of claim 1, wherein the first and second plasma treatments are performed for 10 to 100 seconds, respectively. 제1항에 있어서, 상기 제2단계는 인-시투로 실시되는 것을 특징으로 하는 반도체 소자의 티타늄나이트라이드막 형성방법.The method of claim 1, wherein the second step is performed in-situ. 제1항에 있어서, 상기 질소 및 수소의 량은 100 내지 500sccm인 것을 특징으로 하는 반도체 소자의 티타늄나이트라이드막 형성방법.The method of claim 1, wherein the amount of nitrogen and hydrogen is 100 to 500 sccm.
KR1019950025867A 1995-08-22 1995-08-22 Tin film forming method of semiconductor device KR100187658B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950025867A KR100187658B1 (en) 1995-08-22 1995-08-22 Tin film forming method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950025867A KR100187658B1 (en) 1995-08-22 1995-08-22 Tin film forming method of semiconductor device

Publications (2)

Publication Number Publication Date
KR970013058A true KR970013058A (en) 1997-03-29
KR100187658B1 KR100187658B1 (en) 1999-06-01

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KR1019950025867A KR100187658B1 (en) 1995-08-22 1995-08-22 Tin film forming method of semiconductor device

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100539274B1 (en) 2003-07-15 2005-12-27 삼성전자주식회사 Method for depositing cobalt layer

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