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KR970002432B1 - Automatic measuring apparatus of contaminent degree for cleaning machine - Google Patents

Automatic measuring apparatus of contaminent degree for cleaning machine Download PDF

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Publication number
KR970002432B1
KR970002432B1 KR1019940002631A KR19940002631A KR970002432B1 KR 970002432 B1 KR970002432 B1 KR 970002432B1 KR 1019940002631 A KR1019940002631 A KR 1019940002631A KR 19940002631 A KR19940002631 A KR 19940002631A KR 970002432 B1 KR970002432 B1 KR 970002432B1
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South Korea
Prior art keywords
chemical liquid
metal state
output
state detector
oscillator
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KR1019940002631A
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Korean (ko)
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KR950025899A (en
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김재달
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엘지반도체 주식회사
문정환
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Priority to KR1019940002631A priority Critical patent/KR970002432B1/en
Publication of KR950025899A publication Critical patent/KR950025899A/en
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Publication of KR970002432B1 publication Critical patent/KR970002432B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)

Abstract

Inside an automatic measuring equipment is removed of the external material by the circulation of the medical fluid driver by a pump(4). At this time, ion, fine particle are detected by a detector(10) installed between the pump(4) and a vessel(6). When the fluid passes thru a flu tube(10a) of the metal detector(10), as it contains metal element melted in the signal which is provided from an oscillator to a primary coil and has the wave shape influences the signal induced in a secondary coil. The signal induced by the secondary coil is amplified by the amplifier and the wave shape is selected by the phase discriminator.

Description

반도체 제조용 세정장치의 약액오염도 자동계측장치Automatic measurement device for chemical contamination of cleaning equipment for semiconductor manufacturing

제1도는 일반적인 반도체 제조용 세정장치의 블록 구성도 .1 is a block diagram of a general cleaning device for semiconductor manufacturing.

제2도는 본 발명의 구성도.2 is a block diagram of the present invention.

제3도는 제2도는 각부의 파형도.3 is a waveform diagram of each part.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1-3, 8 : 밸브 4 : 펌프1-3, 8: valve 4: pump

5 : 필터 6 : 용기5: filter 6: container

7a, 7b : 로우 및 하이레벨센서 10 : 금속상태 검출기7a, 7b: Low and high level sensor 10: Metal state detector

11 : 발진기 12 : 증폭기11: oscillator 12: amplifier

13 : 위상판별기 14 : 제어부13: phase discriminator 14: control unit

15 : 표시기15: indicator

본 발명은 반도체 세정장치의 약액의 오염도 상태를 검출하는 계측장치에 관한 것으로, 더욱 상세하게는 사용중인 약액(케미컬)내에 용존하는 금속성의 미립자 이온 등에 의한 오염정도를 자동계측할 수 있도록 한 반도체 제조용 세정장치의 약액오염도 자동계측장치에 관한 것이다.The present invention relates to a measuring device for detecting a contamination state of a chemical liquid of a semiconductor cleaning device, and more particularly, for semiconductor manufacturing, which is capable of automatically measuring the degree of contamination by metallic particulate ions or the like dissolved in a chemical liquid in use. Chemical liquid contamination of the cleaning device also relates to an automatic measurement device.

일반적으로 반도체 세정장치내의 사용중인 약액의 오염상태를 측정하는 방법은 웨이퍼상의 파티클 수량정도나 웨이퍼상의 반점모양등 이물질 현상들을 현미경이나 투광기 또는 전자현미경등으로 직접 확인하는 방법과 별도의 분석장비인 티디에스(TDS)분석에 의한 방법이 있으며, 제1도는 일반적인 반도체 세정장치를 도시한 것이다, 이는 용기(6)내에 처리하고자 하는 공정에 대응한 약액들을 밸브(1-3)로 제어하여 일정량을 채운 뒤, 펌프(4)에 의해 필터(5)를 거쳐 약액을 순환시키면서 공정을 진행한다.In general, the method of measuring the contamination state of the chemical liquid in the semiconductor cleaning apparatus is to directly check foreign matters such as particle size on the wafer or spot shape on the wafer with a microscope, a light emitter, or an electron microscope. There is a method by TDS analysis, and FIG. 1 shows a general semiconductor cleaning device, in which the chemical liquid corresponding to the process to be processed in the container 6 is controlled by the valve 1-3 to fill a certain amount. Then, the process proceeds while circulating the chemical liquid through the filter 5 by the pump 4.

그리고 일정시간 또는 일정 웨이퍼수를 진행한후, 밸브(8)를 열어서 배액시킨후, 다시 용액을 일정비율로 공급한 후 사용한다.After the predetermined time or the number of wafers is advanced, the valve 8 is opened and drained, and then the solution is again supplied at a constant ratio for use.

그리고, 이어한 동작은 대부분 장비가 자동으로 진행한다.And, most of the following operations are automatically performed by the equipment.

그리고 (7a),(7b)는 용기(6)내의 약액의 충전상태를 표시하는 로우 및 하이레벨센서이다.And (7a) and (7b) are low and high level sensors indicating the filling state of the chemical liquid in the container (6).

그러나 상기와 같은 종래의 기술에서는 일정시간 일정진행된 웨이퍼수에 의해 배액시키므로 약액소모량이 많고, 일정량을 일정비율로 혼합사용하고 배액시키는 준비과정의 시간이 소요되며, 용기가 오염되거나 필터나 펌프등 주변장치가 오염되어도 즉시 발견조치가 어려우며, 이때에 진행된 웨이퍼는 특성이 영향을 초래하여 수율저하의 원인이 되며, 금속성의 이온, 미립자등은 필터를 설치해도 제거되지 않는 등의 문제점이 있었다.However, in the conventional technology as described above, the amount of chemical liquid is drained by the number of wafers that have been in constant progress for a certain time, and the amount of chemical liquid consumption is high. Even if the device is contaminated, it is difficult to find the product immediately, and the wafers in this case have a problem that the characteristics of the wafers affect the yield, and the metal ions and fine particles are not removed even when the filter is installed.

본 발명은 이러한 점을 해결하기 위한 것으로, 본 발명의 목적은 순환용 펌프와 필터 사이에 금속상태검출기를 설치하여 이로써 사용중인 약액에 용존되어 있는 금속성의 이물질을 검출하여 그 검출결과를 제어기의 제어에 의해 표시기에 표시하도록 함으로써 사용중인 약액의 오염정도를 쉽게 알 수 있도록 한 반도체 세정장치의 약액오염도 자동계측장치를 제공함에 있다.SUMMARY OF THE INVENTION The present invention has been made to solve this problem, and an object of the present invention is to install a metal state detector between a circulation pump and a filter, thereby detecting metallic foreign matter dissolved in a chemical solution in use and controlling the detection result of the controller. The present invention also provides an automatic measurement device for chemical liquid contamination of a semiconductor cleaning device which makes it easy to know the degree of contamination of the chemical liquid being used by displaying on the indicator.

이러한 목적을 달성하기 위한 본 발명의 특징은 반도체 제조용 세정장치의 약액순환라인의 펌프와 필터 사이에 1,2차 코일과 테프론 튜브로 구성된 금속상태 검출기를 설치하여 상기 금속상태 검출기의 1차코일에서 약액내의 금속성의 이온, 미립자 등의 포함정도에 따라 상기 테프론 튜브를 통하여 2차 코일로 유기되는 전압을 증폭기로 증폭하여 위상판별기에서 상기 발진기에 동기되는 상기 증폭기의 구형파의 출력내에서 상기 2차코일에 유도되는 신호파형을 선별하여 이를 제어부에서 처리하여 표시기에 표시하도록 한 것이다.A feature of the present invention for achieving this object is to install a metal state detector consisting of the first and second coils and Teflon tube between the pump and the filter of the chemical liquid circulation line of the cleaning device for semiconductor manufacturing in the primary coil of the metal state detector According to the degree of inclusion of metallic ions, fine particles, etc. in the chemical liquid, the voltage induced by the secondary coil through the Teflon tube is amplified by the amplifier, and the secondary in the output of the square wave of the amplifier synchronized with the oscillator in the phase discriminator The signal waveform induced in the coil is selected and processed by the controller to display on the display.

이하, 본 발명의 바람직한 일실시예를 첨부도면을 참조로 하여 상세히 설명한다.Hereinafter, with reference to the accompanying drawings, a preferred embodiment of the present invention will be described in detail.

제2도는 본 발명의 구성도로써, 제1도의 펌프(4)와 필터(5) 사이에 설치되며 용액내의 금속성의 이온, 미립자, 파티클 등을 검출하는 금속상태 검출기(10)와, 상기 금속상태 검출기(10)가 금속성분의 오염물질을 검출할 수 있도록 하는 발진기(11)와, 상기 금속상태 검출기(10)의 금속상태 검출 출력을 증폭하는 증폭기(12)와, 상기 발진기(11)의 출력엔 동기된 증폭기(12)의 출력내에서 노이즈성 신호판별을 위해 필요신호만을 선별하는 위상판별기(13)와, 상기 위상판별기(13)의 출력을 제어하여 표시기(15)에 디스플레이되도록 하는 제어부(14)로 구성된다.2 is a block diagram of the present invention, a metal state detector 10 installed between the pump 4 and the filter 5 of FIG. 1 to detect metallic ions, fine particles, particles, and the like in a solution, and the metal state. An oscillator 11 which enables the detector 10 to detect metal contaminants, an amplifier 12 which amplifies the metal state detection output of the metal state detector 10, and an output of the oscillator 11 In the output of the synchronized amplifier 12, the phase discriminator 13 for selecting only the necessary signals for noise signal discrimination, and the output of the phase discriminator 13 are controlled to be displayed on the display 15. It consists of a control unit 14.

그리고 상기 금속상태 검출기(10)는 상기 발진기(11)에 접속된 1차코일(L1)과, 상기 증폭기(12)에 접속된 2차코일(L2)과, 상기 1차 및 2차 코일(L1),(L2)사이에 위치되며 용액이 통과되는 테프론 튜브(10a)로 구성된다.The metal state detector 10 includes a primary coil L1 connected to the oscillator 11, a secondary coil L2 connected to the amplifier 12, and the primary and secondary coils L1. It is located between (L2) and consists of a Teflon tube (10a) through which the solution passes.

상기와 같이 구성된 본 발명은 제1도의 시스템에서 펌프(4)에 의해 용기(6)내의 약액을 순환시키는데, 이때 용액을 순환시키는 이유가 용기(6)내 또는 약액속에 존재하고 있는 이물질들을 제거하기 위함이지만 약액속에 용존하고 있는 이온, 미립자 등의 이물은 제거가 되지 않으므로 펌프(4)와 용기(6)사이에 금속상태 검출(10)를 설치하여 용액내의 이물질을 검출하고자 하는 것으로, 용액이 금속상태 검출기(10)내의 테프론 튜브(10a)를 통과할 때 금속성분이 용존하게 되면 상기 발진기(11)로 부터 1차코일(L1)에 인가된 제3a도의 파형을 갖는 신호가 2차 코일(L2)에 유도되는 신호에 영향을 주게 된다.The present invention configured as above circulates the chemical liquid in the container 6 by the pump 4 in the system of FIG. 1, wherein the reason for circulating the solution is to remove foreign substances present in the container 6 or in the chemical liquid. However, since foreign substances such as ions and fine particles dissolved in the chemical solution cannot be removed, a metal state detection 10 is installed between the pump 4 and the container 6 to detect foreign substances in the solution. When the metal component is dissolved when passing through the Teflon tube 10a in the state detector 10, the signal having the waveform of FIG. 3a applied from the oscillator 11 to the primary coil L1 is converted to the secondary coil L2. ) Will affect the signal induced.

한편, 일반적인 트랜스의 경우, 1, 2차 코일 사이에 코어가 설치되어 전자유도작용이 일어나게 되는데, 여기서 상기 금속상태 검출기(10)의 경우는 테프론 튜브(10a)내를 통과하게 되는 용액에 존재하는 금속성의 이온, 미립자등이 코어의 역할을 하게 되는 것이다.On the other hand, in the case of a general transformer, a core is installed between the primary and secondary coils to cause an electromagnetic induction action, where the metal state detector 10 is present in a solution that passes through the Teflon tube 10a. Metallic ions, fine particles, etc. will act as a core.

그리고 상기 2차 코일(L2)에 유기된 신호는 증폭기(12)를 통하여 증폭되어 위상판별기(13)에 의해 제3c도와 같이 파형이 선별된다.The signal induced in the secondary coil L2 is amplified by the amplifier 12 and the waveform is sorted by the phase discriminator 13 as shown in FIG. 3C.

즉, 상기 위상판별기(13)는 상기 발진기(11)의 출력파형(제3a도)에 동기된 상기 증폭기(12)의 출력파형인 구형파(제3b도)에서 이 구형파의 진폭 t1, t2 내에 들어오는 상기 금속상태 검출기(10)의 2차 코일(L2)에 유도되는 신호파형(제3c도)을 선별한다.That is, the phase discriminator 13 is within the amplitudes t1 and t2 of the square wave in the square wave (Figure 3b) which is the output waveform of the amplifier 12 synchronized with the output waveform of the oscillator 11 (Figure 3a). The signal waveform (FIG. 3c) guided to the secondary coil L2 of the incoming metal state detector 10 is selected.

이렇게 신호파형을 선별하는 이유는 노이즈성 파형과 구분하기 위함이다.The reason for selecting the signal waveform is to distinguish it from the noisy waveform.

그리고 상기 위상판별기(13)에 의해 선별된 파형은 제어부(14)에 입력되어 연산 등의 처리를 거쳐서 표시기(15)에 표시되게 된다.The waveform selected by the phase discriminator 13 is input to the control unit 14 to be displayed on the display unit 15 after processing such as calculation.

이상에서 살펴본 바와 같이 본 발명은 반도체 제조장치인 세정장치의 약액순환라인에 금속상태 검출기를 설치하여 반도체 제조에 현재 사용되어지는 약액내의 용존하는 금속성의 이온, 미립자 등의 포함정도를 검출하도록 하고 이를 제어장치의 제어에 따라 표시기에 표시되도록 함으로써 약액의 오염상태를 즉시 알수 있게 되어 즉시조치 가능케 되므로 수율을 향상시킬 수 있게 된다.As described above, the present invention provides a metal state detector in a chemical liquid circulation line of a cleaning apparatus, which is a semiconductor manufacturing apparatus, to detect the degree of inclusion of dissolved metallic ions, fine particles, etc. in a chemical liquid currently used in semiconductor manufacturing. By displaying on the indicator according to the control of the control device it is possible to immediately know the contaminated state of the chemical liquid is able to immediately take action to improve the yield.

Claims (2)

반도체 세정장치의 약액순환라인의 펌프와 필터 사이에 설치되며 약액내의 금속성의 이온, 미립자, 파티클 등을 검출하는 금속상태 검출기와, 상기 금속상태 검출기간 금속성분의 오염물질을 검출할 수 있도록 발진파형을 출력하는 발진기와, 상기 금속상태 검출기의 금속상태 검출 출력을 증폭하는 증폭기와, 상기 발진기의 출력에 동기된 증폭기의 출력내에서 노이즈 성분을 제외한 상기 금속상태 검출기의 출력을 선별하기 위한 위상판별기와, 상기 위상판별기의 출력을 연산처리하여 출력하는 제어부와, 상기 제어부의 연산처리결과인 약액의 오염정도가 디스플레이되는 표시기를 구성됨을 특징으로 하는 반도체 제조용 세정장치의 약액오염도 자동계측장치.A metal state detector installed between the pump and the filter of the chemical liquid circulation line of the semiconductor cleaning device and detecting metallic ions, particulates, particles, etc. in the chemical liquid, and the oscillation waveform to detect contaminants of the metal components during the metal state detection period. An oscillator for outputting a signal, an amplifier for amplifying the metal state detection output of the metal state detector, a phase discriminator for selecting an output of the metal state detector excluding noise components in an output of the amplifier synchronized with the output of the oscillator And a control unit for calculating and outputting the output of the phase discriminator and an indicator for displaying the contamination level of the chemical liquid as a result of the operation processing of the control unit. 제1항에 있어서, 상기 금속상태 검출기는 상기 발진기에 접속된 1차코일과, 상기 증폭기에 접속된 2차코일과, 상기 1차 및 2차 코일 사이에 위치되며 약액이 통과되는 테프론 튜브로 구성됨을 특징으로 하는 반도체 제조용 세정장치의 약액오염도 자동계측장치.The metal state detector of claim 1, wherein the metal state detector comprises a primary coil connected to the oscillator, a secondary coil connected to the amplifier, and a Teflon tube positioned between the primary and secondary coils and through which chemical liquid is passed. The chemical liquid contamination automatic measurement device of the cleaning device for semiconductor manufacturing.
KR1019940002631A 1994-02-15 1994-02-15 Automatic measuring apparatus of contaminent degree for cleaning machine KR970002432B1 (en)

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