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KR960012454A - 몰드에서 수지 압력에 의한 단락 회로를 갖지 않는 반도체 장치 - Google Patents

몰드에서 수지 압력에 의한 단락 회로를 갖지 않는 반도체 장치 Download PDF

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Publication number
KR960012454A
KR960012454A KR1019950031141A KR19950031141A KR960012454A KR 960012454 A KR960012454 A KR 960012454A KR 1019950031141 A KR1019950031141 A KR 1019950031141A KR 19950031141 A KR19950031141 A KR 19950031141A KR 960012454 A KR960012454 A KR 960012454A
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South Korea
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leads
metal wire
semiconductor device
conductive metal
electrical passage
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KR1019950031141A
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KR100190213B1 (ko
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토무 이무라
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가네꼬 히사시
닛폰 덴키 가부시끼가이샤
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Abstract

아일랜드(22b)에 장착된 반도체 칩(21)은 절연 서스펜더 테입(22ｇ)에 의해 지지되는 테입 자동 본딩 리드(22f)를 통해 내부 리드(22d)에 접속되며, 지지 링(22h)이 상기 아일랜드(22b)에 접속된 서스펜션 핀(22c)과 절연 서스펜더 테입(22ｇ)사아에서 접속되어 몰딩 단계 동안 반도체 칩(21)과 테입 자동 본딩 리드(22f) 사이의 원래의 상대적인 위치를 지탱한다.

Description

몰드에서 수지 압력에 의한 단락 회로를 갖지 않는 반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제6도는 본 발명에 따른 리드 프레임으로 조립된 반도체 칩을 보여주는 평면도.
제7도는 제6도의 선 C-C를 따라 절단되어 본 발명에 따른 반도체 장치의 내부 구조를 보여주는 횡단면도.
제8도는 제6도의 선 D-D를 따라 절단되어 다른 각도로부터 반도체 장치의 내부 구조를 보여주는 횡단면도.

Claims (9)

  1. 다수의 접촉 전극(21a;34;59)을 포함하는 반도체 칩(21;32;42;52;62)과; 상기반도체 칩을 장착하기 위한 아일랜드 영역(22b)을 가지는 아일랜드 서브 구조(22a;22b/22c)를 포함하는 리드 프레임 구조(22;31;41;51;61)와; 상기 아일랜드 영역 둘레에 배열된 다수의 첫번째 리드(22d; 22d/33; 22d/43; 22d/33/56; 22d/43/56)와; 상기 다수의 접촉 전극에 각각 접속된 개개의 내측 단부 영역 및 상기 다수의 첫번째 리드에 각각 접속된 개개의 외측 단부 영역을 가지는 다수의 두번째 리드(22f)와; 상기 다수의 두번째 리드 사이에서 상대적인 관계를 유지하기 위해 상기 첫번째 리드와 상기 아일랜드 영역 사이에 제공되며 또한 상기 두번째 리드의 중간 영역에 접속되는 절연 서스펜더(22ｇ)및 상기 반도체 칩 및 상기 리드 프레임 구조를 밀봉하기 위해 몰드된 패키지(23)를 포함하는 반도체 장치에 있어서, 지지 부재(22h)가 상기 절연 서스펜더와 상기 아일랜드 서브 구조 사이에서 상대적인 관계를 유지하기 위해 이들 사이에 접속되는 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 아이랜드 서브 구조(22a; 22b/22c)는 상기 아일랜드 영역(22b)에 접속된 단단한 영역(22ca)및 상기 단단한 영역에 접속된 변형가능한 영역(22cb)을 가지며, 상기 지지부재는 상기 절연 서스펜더(22ｇ)와 상기 단단한 영역(22ca)사이에 접속되어 있는 것을 특징으로 하는 반도체 장치.
  3. 제1항에 있어서, 상기 다수의 첫번째 리드(22d)및 상기 아일랜드 서브 구조(22a; 22b/22c)는 조합하여 리드 프레임을 형성하며, 상기 다수의 두번째 리드(22f)는 기계적 강도에 있어서 상기 다수의 첫번째 리드보다 더 작은 테입 자동 본딩 리드인 것을 특징으로 하는 반도체 장치.
  4. 제1항에 있어서, 또한 상기 리드 프레임 구조(31;41;51;61)는 전압에 할당된 상기 다수의 첫번째 리드중 적어도 하나와 도전 물질로 이루어진 상기 지지 부재(22h)사이에 접속된 첫번째 전기 통로 수단(35a;43)및 상기 반도체 칩에 상기 전압을 공급하기 위한 상기 다수의 접촉 전극 중 적어도 하나와 상기 지지 부재 사이에 접속된 두번째 전기 통로 수단(35b;44)을 부가로 포함하는 것을 특징으로 하는 반도체 장치.
  5. 제4항에 있어서, 상기 첫번째 전기 통로 및 상기 두번째 전기 통로는 첫번째 도전 금속 와이어(35a)와 두번째 금속 와이어(35b)에 의해 제공되는 것을 특징으로 하는 반도체 장치.
  6. 제4항에 있어서, 상기 첫번째 전기 통로와 상기 두번째 전기 통로는 상기 다수의 첫번째 리드의 적어도 하나와 도전 금속 와이어(44)의 연장부에 의해 제공되는 것을 특징으로 하는 반도체 장치.
  7. 제4항에 있어서, 상기 지지 부재(22h)는 상기 절연 서스펜더(22ｇ)의 상측 및 하측 표면의 하나에 접속되며, 또한 상기 리드 프레임 구조(51;61)는 상기 절연 서스펜더(22ｇ)의 상기 상측 및 하측 표면의 다른 것을 덮는 절연 레이어(53)를 포함하며, 도전판 부재(55)는 상기 절연 레이어(53)를 통해 상기 절연 서스펜더(22ｇ)에 의해 지지되며, 세번째 전기 통로 수단(57)은 다른 전압에 할당된 상기 다수의 첫번째 리드 중 적어도 다른 하나(56)와 상기 도전판 부재 사이에 접속되어 있으며, 네번째 전기 통로 수단(58)은 상기 도전판 부재와 상기 다수의 접촉 전극의 적어도 다른 하나(59)사이에 접속되어 있는 것을 특징으로 하는 반도체 장치.
  8. 제7항에 있어서, 상기 첫번째 전기 통로, 두번째 전기 통로, 세번째 전기 통로 및 네번째 전기 통로는 첫번째 도전 금속 와이어(35a), 두번째 도전 금속 와이어(35b), 세번째 도전 금속 와이어(57)및 네번째 도전 금속 와이어(58)에 의해 제공되는 것을 특징으로 하는 반도체 장치.
  9. 제7항에 있어서, 상기 첫번째 전기 통로, 두번째 전기 통로, 세번째 전기 통로 및 네번째 전기 통로는 상기 다수의 첫번째 리드의 적어도 하나(43)와 첫번째 도전 금속 와이어(44), 두번째 도전 금속 와이어(57)및 세번째 도전 금속 와이어(58)의 연장부에 의해 제공되는 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950031141A 1994-09-22 1995-09-21 몰드에서 수지 압력에 의한 단락 회로를 갖지 않는 반도체 장치 KR100190213B1 (ko)

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KR102414593B1 (ko) 2015-12-30 2022-06-30 엘지디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법

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JPH0834282B2 (ja) * 1988-10-31 1996-03-29 日本電気株式会社 半導体装置用リードフレーム
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JPH02146740A (ja) * 1988-11-28 1990-06-05 Mitsubishi Electric Corp 半導体装置
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KR100367826B1 (ko) * 1997-09-11 2003-08-19 제일모직주식회사 불포화 폴리에스테르계 난연성 벌크 몰딩 컴파운드의 제조방법

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