KR960018895A - Memory device with the function of cache memory - Google Patents
Memory device with the function of cache memory Download PDFInfo
- Publication number
- KR960018895A KR960018895A KR1019940028858A KR19940028858A KR960018895A KR 960018895 A KR960018895 A KR 960018895A KR 1019940028858 A KR1019940028858 A KR 1019940028858A KR 19940028858 A KR19940028858 A KR 19940028858A KR 960018895 A KR960018895 A KR 960018895A
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- data
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- 239000003607 modifier Substances 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
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- Dram (AREA)
- Static Random-Access Memory (AREA)
Abstract
본 발명은 반도체 기억소자의 캐시 메모리의 기능을 갖는 메모리 장치에 관한 것으로, 모디파이드 라이트 데이타(modified write data)를, 데이타를 출력한 핀(pin)이 아닌 다른 데이타 핀을 이용하여 데이타 레지스터에 일시적으로 저장시켜 둠으로써, 연속적인 리드 동작을 수행하고 난 이후에 연속적인 라이트 동작이 가능하도록 하여 데이타의 리드 모디파이더 라이트(rmw)시 동작속도를 빠르게 할 수 있는 효과가 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a memory device having a function of a cache memory of a semiconductor memory device, wherein modulated write data is temporarily stored in a data register by using a data pin other than the pin on which the data is output. By storing the data as a result, the continuous write operation can be performed after the continuous read operation is performed, and thus the operation speed of the read modifier light rmw of the data can be increased.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제3도는 본 발명에 따른 리드 모디파이 라이트 동작회로의 회로도.3 is a circuit diagram of a read modifier light operation circuit according to the present invention.
제4도는 제3도의 레지스터가 연속적인 데이타의 리드 라이트 동작을 수행하기 위한 어드레스 발생장치의 일실시예.4 is an embodiment of an address generator for performing the register write operation of the third data read write operation.
제5도는 연속적인 리드 동작 및 연속적인 라이트 동작으로 리드 모디파이 라이트 동작을 수행하는 경우의 타이밍도.5 is a timing diagram when a read modifier write operation is performed in a continuous read operation and a continuous write operation.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940028858A KR0140470B1 (en) | 1994-11-04 | 1994-11-04 | Memory device with the function of cache memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940028858A KR0140470B1 (en) | 1994-11-04 | 1994-11-04 | Memory device with the function of cache memory |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960018895A true KR960018895A (en) | 1996-06-17 |
KR0140470B1 KR0140470B1 (en) | 1998-07-01 |
Family
ID=66687378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940028858A KR0140470B1 (en) | 1994-11-04 | 1994-11-04 | Memory device with the function of cache memory |
Country Status (1)
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KR (1) | KR0140470B1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5101736B2 (en) | 2008-07-25 | 2012-12-19 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | Leakage current dissipation device |
KR102697484B1 (en) * | 2017-01-23 | 2024-08-21 | 에스케이하이닉스 주식회사 | Semiconductor device |
-
1994
- 1994-11-04 KR KR1019940028858A patent/KR0140470B1/en not_active IP Right Cessation
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Publication number | Publication date |
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KR0140470B1 (en) | 1998-07-01 |
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