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KR960009113B1 - Method for forming node electrode of capacitor - Google Patents

Method for forming node electrode of capacitor Download PDF

Info

Publication number
KR960009113B1
KR960009113B1 KR92017520A KR920017520A KR960009113B1 KR 960009113 B1 KR960009113 B1 KR 960009113B1 KR 92017520 A KR92017520 A KR 92017520A KR 920017520 A KR920017520 A KR 920017520A KR 960009113 B1 KR960009113 B1 KR 960009113B1
Authority
KR
South Korea
Prior art keywords
forming
insulating layer
capacitor
node electrode
layer
Prior art date
Application number
KR92017520A
Other languages
English (en)
Other versions
KR940008097A (ko
Inventor
Bon-Jae Koo
Moon-Mo Jung
Original Assignee
Lg Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Semicon Co Ltd filed Critical Lg Semicon Co Ltd
Priority to KR92017520A priority Critical patent/KR960009113B1/ko
Publication of KR940008097A publication Critical patent/KR940008097A/ko
Application granted granted Critical
Publication of KR960009113B1 publication Critical patent/KR960009113B1/ko

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • H10B12/02Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03Making the capacitor or connections thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40Capacitors
    • H01L28/60Electrodes
    • H01L28/82Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
KR92017520A 1992-09-25 1992-09-25 Method for forming node electrode of capacitor KR960009113B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR92017520A KR960009113B1 (en) 1992-09-25 1992-09-25 Method for forming node electrode of capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR92017520A KR960009113B1 (en) 1992-09-25 1992-09-25 Method for forming node electrode of capacitor

Publications (2)

Publication Number Publication Date
KR940008097A KR940008097A (ko) 1994-04-28
KR960009113B1 true KR960009113B1 (en) 1996-07-10

Family

ID=19340107

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92017520A KR960009113B1 (en) 1992-09-25 1992-09-25 Method for forming node electrode of capacitor

Country Status (1)

Country Link
KR (1) KR960009113B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7102707B2 (en) 2002-04-03 2006-09-05 Nec Lcd Technologies, Ltd. Liquid-crystal display device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100546196B1 (ko) * 1998-12-30 2006-04-06 주식회사 하이닉스반도체 래치를 이용한 리페어 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7102707B2 (en) 2002-04-03 2006-09-05 Nec Lcd Technologies, Ltd. Liquid-crystal display device

Also Published As

Publication number Publication date
KR940008097A (ko) 1994-04-28

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Legal Events

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A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20060619

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee