KR960009113B1 - Method for forming node electrode of capacitor - Google Patents
Method for forming node electrode of capacitor Download PDFInfo
- Publication number
- KR960009113B1 KR960009113B1 KR92017520A KR920017520A KR960009113B1 KR 960009113 B1 KR960009113 B1 KR 960009113B1 KR 92017520 A KR92017520 A KR 92017520A KR 920017520 A KR920017520 A KR 920017520A KR 960009113 B1 KR960009113 B1 KR 960009113B1
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- insulating layer
- capacitor
- node electrode
- layer
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR92017520A KR960009113B1 (en) | 1992-09-25 | 1992-09-25 | Method for forming node electrode of capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR92017520A KR960009113B1 (en) | 1992-09-25 | 1992-09-25 | Method for forming node electrode of capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940008097A KR940008097A (ko) | 1994-04-28 |
KR960009113B1 true KR960009113B1 (en) | 1996-07-10 |
Family
ID=19340107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR92017520A KR960009113B1 (en) | 1992-09-25 | 1992-09-25 | Method for forming node electrode of capacitor |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960009113B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7102707B2 (en) | 2002-04-03 | 2006-09-05 | Nec Lcd Technologies, Ltd. | Liquid-crystal display device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100546196B1 (ko) * | 1998-12-30 | 2006-04-06 | 주식회사 하이닉스반도체 | 래치를 이용한 리페어 장치 |
-
1992
- 1992-09-25 KR KR92017520A patent/KR960009113B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7102707B2 (en) | 2002-04-03 | 2006-09-05 | Nec Lcd Technologies, Ltd. | Liquid-crystal display device |
Also Published As
Publication number | Publication date |
---|---|
KR940008097A (ko) | 1994-04-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR960008865B1 (en) | Method for manufacturing a capacitor in semiconductor memory device | |
EP1684343A3 (en) | Method for manufacturing a semiconductor memory device | |
EP0487739A4 (en) | Method of manufacturing semiconductor device | |
TW358988B (en) | Fabrication method of thin film transistor | |
EP0154871A3 (en) | One-transistor dynamic random-access memory | |
TW253992B (en) | Dielectric as load resistor in 4T SRAM | |
KR970007819B1 (en) | Contact forming method of semiconductor device | |
KR960009113B1 (en) | Method for forming node electrode of capacitor | |
HK1005005A1 (en) | Semiconductor device with self-aligned contacts and the method of fabrication | |
TW370693B (en) | Method for forming a contact to a substrate | |
KR980005912A (ko) | 반도체 장치의 금속콘택구조 및 그 제조방법 | |
TW351015B (en) | Semiconductor and its manufacturing method the invention relats to a semiconductor and its manufacturing method | |
TW346672B (en) | Method for fabricating a semiconductor memory cell in a DRAM | |
KR950008249B1 (en) | Storage node of vlsi circuit manufacturing process | |
KR960014727B1 (en) | Method of making a memory capacitor in semiconductor device | |
KR970011669B1 (en) | A stack type dram cell and a method for fabricating the same | |
KR20000002731A (en) | Semiconductor device production method | |
KR960011817B1 (en) | Method for forming a capacitor storage node in semiconductor device | |
KR960008526B1 (en) | Manufacturing method of capacitor | |
TW263612B (en) | Process for buried contact | |
KR960008573B1 (en) | Manufacture method of memory device capacitor | |
KR960016224B1 (en) | Contact forming method | |
TW356585B (en) | Method for minimizing component size in semiconductor processing and load register structure | |
KR970006739B1 (en) | Resonant tunneling transistor & method for manufacturing | |
TW354427B (en) | Method for fabricating a stage-like capacitor of a dynamic random access memory |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20060619 Year of fee payment: 11 |
|
LAPS | Lapse due to unpaid annual fee |