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KR960007835A - 청색 발광성 질화갈륨 적층막의 제조방법 - Google Patents

청색 발광성 질화갈륨 적층막의 제조방법 Download PDF

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Publication number
KR960007835A
KR960007835A KR1019940020711A KR19940020711A KR960007835A KR 960007835 A KR960007835 A KR 960007835A KR 1019940020711 A KR1019940020711 A KR 1019940020711A KR 19940020711 A KR19940020711 A KR 19940020711A KR 960007835 A KR960007835 A KR 960007835A
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South Korea
Prior art keywords
gallium nitride
laser beam
substrate
nitride
gallium
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KR1019940020711A
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English (en)
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이선숙
황진수
정필조
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강박광
재단법인 한국화학연구소
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Priority to KR1019940020711A priority Critical patent/KR960007835A/ko
Priority to AU80380/94A priority patent/AU679277B2/en
Priority to DE4447177A priority patent/DE4447177A1/de
Priority to JP7015496A priority patent/JPH0878728A/ja
Publication of KR960007835A publication Critical patent/KR960007835A/ko

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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02455—Group 13/15 materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L33/005—Processes
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Abstract

본 발명은 질화칼륨(Gallium Nitride, GaN)을 집광성 레이저광 여기(coherent laser aided vapour phase epitaxy, LVPE)방법에 의해 육방정계의 부루자이트(Wurtzite) 단결정 격자구조로 피복성장시키는 방법에 관한 것으로서 더욱 상세하게는 기판위에 질화알루미늄(Aluminum nitride, AIN)완충막을 인시츄(in-situ)방법에 의해 도입하고 갈륨 함유 반응물과 질소함유 반응물을 약 800℃의 낮은 온도와 0.1~3.8torr의 낮은 증기압하에서 공명적 에너지 광분해 증착법에 의해 단결정 두께 2~20μm를 갖는 청색 발광성 질화갈륨 적층막(epitaxial film)을 제조하는 방법에 관한 것이다.

Description

청색 발광성 질화갈륨 적층막의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 레이저 빔 조사방식의 개요도.
제2도는 본 발명에서 사용된 집광성 레이저 유도증측 실험장치의 개략도이다.

Claims (13)

  1. 이종의 기판상에서 집광성 레이저 여기(LVPE)에 의해 Ⅲ족 갈륨과 Ⅴ족 질소로 구성된 질화갈륨을 적층막으로 성장시키는 방법에 있어서 사파이어 기판위에 질화알루미늄 완충막을 인시츄(in-situ)로 증착시키고 그 위에 반응물과 파장공명적 광화학 반응을 일으키는 레이저 빔을 조사하여 질화 갈륨 적층을 증착시키는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.
  2. 제1항에 있어서 상기 질화알루미늄은 200~300Å 두께로 증착시키는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.
  3. 제1항에 있어서 상기 광화학 반응은 0.1~3.8torr, 800±100℃에서 15~60분동안 진행되는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.
  4. 제1항에 있어서 상기 레이저 빔으로 193nmArF, 248nmKrF 또는 308nmXeCl 집광성 엑시머 레이저를 사용하는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.
  5. 제1항에 있어서 상기 반응물은 삼메틸갈륨과 암모니아를 사용하는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.
  6. 제1항에 있어서 상기 사파이어 기판은 a(1120)이면 m(1110)면, c(001)면 R(1012)면 또는 이들면에 대해 3~10° 기울어진 단결정을 사용하는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.
  7. 제1항에 있어서 상기 질화알루미늄 완충막은 1100~1850℃ 온도에서 암모니아를 사용하며 제조되는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.
  8. 제1항에 있어서 상기 레이저 빔은 기판표면에 평행하게 조사하는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.
  9. 제1항에 있어서 상기 레이저 빔은 기판표면에 비스듬하게 조사하는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.
  10. 제1항에 있어서 상기 레이저 빔은 기판표면에 수직하게 조사하는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.
  11. 제1항에 있어서 상기 레이저 빔은 기판표면에 평행 그리고 수직하게 조사하는 것을 특징으로 하는 질화갈륨 적층막의 제조방법.
  12. 제1항의 조사방법에 따른 2~3μm 두께의 육각형 결정구조를 갖는 청색발광성 질화갈륨 적층막.
  13. 제12항에 있어서 상기 질화갈륨 적층막의 조성은 GamAlnNm(1-x)이고, 광증착된 표면층은 GamAlnNm(1-x)(이때, 0≤n≤m이고, 0≤x〈0.07)임.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940020711A 1994-08-22 1994-08-22 청색 발광성 질화갈륨 적층막의 제조방법 KR960007835A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019940020711A KR960007835A (ko) 1994-08-22 1994-08-22 청색 발광성 질화갈륨 적층막의 제조방법
AU80380/94A AU679277B2 (en) 1994-08-22 1994-12-13 A process for growth of gallium nitride
DE4447177A DE4447177A1 (de) 1994-08-22 1994-12-30 Verfahren zum heteroepitaxischen Wachstum von blaues Licht emittierendem Galliumnitrid
JP7015496A JPH0878728A (ja) 1994-08-22 1995-01-05 青色発光窒化ガリウムのヘテロエピタキシャル成長方法

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KR1019940020711A KR960007835A (ko) 1994-08-22 1994-08-22 청색 발광성 질화갈륨 적층막의 제조방법

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KR (1) KR960007835A (ko)
AU (1) AU679277B2 (ko)
DE (1) DE4447177A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100287362B1 (ko) * 1997-11-21 2001-05-02 박호군 이온빔을이용한산화물기판표면의전처리방법및이를이용한질화물박막형성방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3347002B2 (ja) * 1996-11-08 2002-11-20 株式会社東芝 半導体発光素子の製造方法
JP2002374003A (ja) * 2001-06-14 2002-12-26 Ngk Insulators Ltd 半導体素子、及び半導体素子用基板

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JP2631285B2 (ja) * 1987-01-31 1997-07-16 豊田合成 株式会社 窒化ガリウム系化合物半導体の気相成長方法
JP2829319B2 (ja) * 1988-09-16 1998-11-25 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JP2704181B2 (ja) * 1989-02-13 1998-01-26 日本電信電話株式会社 化合物半導体単結晶薄膜の成長方法
JP3026087B2 (ja) * 1989-03-01 2000-03-27 豊田合成株式会社 窒化ガリウム系化合物半導体の気相成長方法
JPH03183173A (ja) * 1989-12-13 1991-08-09 Canon Inc 光学素子
JPH04187597A (ja) * 1990-11-22 1992-07-06 Matsushita Electric Ind Co Ltd 窒化ガリウム薄膜の製造方法
JPH088217B2 (ja) * 1991-01-31 1996-01-29 日亜化学工業株式会社 窒化ガリウム系化合物半導体の結晶成長方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100287362B1 (ko) * 1997-11-21 2001-05-02 박호군 이온빔을이용한산화물기판표면의전처리방법및이를이용한질화물박막형성방법

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AU679277B2 (en) 1997-06-26
AU8038094A (en) 1996-03-14
DE4447177A1 (de) 1996-02-29

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