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KR950020993A - 반도체 제조장치 - Google Patents

반도체 제조장치 Download PDF

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Publication number
KR950020993A
KR950020993A KR1019930029053A KR930029053A KR950020993A KR 950020993 A KR950020993 A KR 950020993A KR 1019930029053 A KR1019930029053 A KR 1019930029053A KR 930029053 A KR930029053 A KR 930029053A KR 950020993 A KR950020993 A KR 950020993A
Authority
KR
South Korea
Prior art keywords
hole
porous plate
semiconductor manufacturing
shower head
manufacturing apparatus
Prior art date
Application number
KR1019930029053A
Other languages
English (en)
Inventor
이길광
가즈유끼 후지하라
장규환
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019930029053A priority Critical patent/KR950020993A/ko
Priority to US08/352,249 priority patent/US5624498A/en
Priority to JP6318170A priority patent/JPH07201762A/ja
Publication of KR950020993A publication Critical patent/KR950020993A/ko

Links

Classifications

    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Pipeline Systems (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

반응실에 여러 종류의 가스를 균일하게 공급하는 반도체 제조장치의 가스공급 장치에 관한 것이다. 본 발명은 박막 제조용 반도체 제조장치의 샤워헤드에 있어서, 상기 샤워 헤드는 제1 다공판과 제2 다공판으로 구성되며, 상기 제1다공판은 전면에 걸쳐서 형성된 복수개의 제1구멍과 중앙에 형성된 제2구멍이 형성되어 있고, 상기 제2다공판은 소정의 크기가 형성된 제1철부와 그 주변부에 연속적으로 형성된 요부가 있는 제2철부가 형성되어 있는 것을 특징으로 하는 반도체 제조장치를 제공한다. 따라서 본 발명에 의한 반도체 제조장치는 상기 샤워헤드로 인하여 반응실내에서 가스의 균일한 분포를 얻어서, 이로 인하여 기판에 성장되는 박막 두께의 균일성을 향상 시킬수 있다.

Description

반도체 제조장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3A도 및 제3B도는 본 발명에 의한 개선된 화학 기상 증착 장치의 가스공급 장치를 설명하기 위한 개략적인 단면도이다
제4A도 및 제4B도는 상기 제3A도 및 제3B도에 도시한 가스공급 장치의 제1다공판 및 제2 다공판을 확대하여 도시한 도면이다.

Claims (5)

  1. 박막 제조용 반도체 제조장치의 샤워 헤드에 있어서, 상기 샤워 헤드는 제1 다공판과 제2 다공판으로 구성되며, 상기 제1다공판은 전면에 걸쳐서 형성된 복수개의 제1 구멍과 중앙에 형성된 제2구멍이 형성되어 있고, 상기 제2 다공판은 소정의 크기가 형성된 제1 철부와 그 주변부에 연속적으로 형성된 요부가 있는 제2 철부가 형성되어 있는 것을 특징으로 하는 반도체 제조장치.
  2. 제1항에 있어서, 상기 제1 철부의 중앙에는 상기 제2구멍에 대응하여 상기 제2 구멍보다 작은 크기를갖는 제3 구멍이 형성되어 있고, 상기 제1 철부의 사이에 연속적으로 형성된 요부에는 제3 구멍과 같은 크기의 제4 구멍이 형성되어 있는 것을 특징으로 하는 반도체 제조장치.
  3. 제2항에 있어서, 상기 제3 구멍과 상기 제4구멍은 상기 제1구멍과 상기 제2구멍보다 그 직경이 작은 것을 특징으로 하는 반도체 제조장치.
  4. 제1항에 있어서, 상기 샤워헤드는 상기 제1 다공판과 상기 제2다공판이 부착되어 상기 제1 구멍을 통과한 가스는 상기 제3구멍을 통하여 분사되고, 상기 제2구멍을 통과한 가스는 상기 제4구멍을 통하여 분사됨을 특징으로 하는 반도체 제조장치.
  5. 제1항에 있어서, 상가 제1 다공판과 제2 다공판은 스테인레스 또는 표면에 AI2O3로 도금된 알루미늄(AI) 합금의 재질인 것을 특징으로 하는 반도체 제조장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930029053A 1993-12-22 1993-12-22 반도체 제조장치 KR950020993A (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019930029053A KR950020993A (ko) 1993-12-22 1993-12-22 반도체 제조장치
US08/352,249 US5624498A (en) 1993-12-22 1994-12-08 Showerhead for a gas supplying apparatus
JP6318170A JPH07201762A (ja) 1993-12-22 1994-12-21 半導体素子製造用ガス供給装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930029053A KR950020993A (ko) 1993-12-22 1993-12-22 반도체 제조장치

Publications (1)

Publication Number Publication Date
KR950020993A true KR950020993A (ko) 1995-07-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930029053A KR950020993A (ko) 1993-12-22 1993-12-22 반도체 제조장치

Country Status (3)

Country Link
US (1) US5624498A (ko)
JP (1) JPH07201762A (ko)
KR (1) KR950020993A (ko)

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* Cited by examiner, † Cited by third party
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