KR950009800B1 - Semiconductor device and manufacturing method thereof - Google Patents

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Description

Semiconductor device and manufacturing method thereof

1a to 1e is a cross-sectional view showing the manufacturing step of the thin film transistor (TET) according to the present invention.

2 is a graphical representation of the field mobility of TET related to the ratio of hydrogen partial pressure to total atmospheric pressure (P _H / P _TOTAL ) during sputtering.

3 is a graphical representation of the TFT's threshold voltage relative to the ratio of hydrogen partial pressure to total atmospheric pressure (P _H / P _TOTAL ) during sputtering.

4 shows a laser Raman Spectra of a silicon semiconductor film crystallized by heat.

The present invention relates to a semiconductor device comprising at least one semiconductor film with lattice distortion therein and a method of manufacturing the same.

The method for producing a polycrystalline semiconductor film for use in a polycrystalline semiconductor device includes (1) depositing a film in a temperature range of 550 to 900 ° C using low pressure CVD (chemical vapor deposition), and (2) a semiconductor film deposited by low pressure CVD. Annealing (annealing) in a temperature range of 550 to 650 ° C. for a period of time to tens of hours, and (3) 550 to 650 ° C. for several hours to several tens of hours of the semiconductor film deposited by plasma enhanced CVD. Crystallizing with heat by annealing the film in the temperature range of.

However, in the deposition of non-single crystal semiconductor film, the low pressure CVD method fails to deposit the film uniformly over a large area on the substrate, and the plasma CVD method takes too long to deposit the film to a sufficient thickness.

In addition, a method of manufacturing a thin film transistor using an amorphous silicon (a-Si) film deposited by sputtering in the presence of hydrogen is known.

However, the electrical properties of the obtained thin film are poor to produce. For example, the electron mobility is 0.1 cm 2 / Vsec or less. If a non-single crystal semiconductor film is deposited by a sputtering method in a hydrogen free atmosphere, on the other hand, the resulting film undergoes separation of silicon atoms. Moreover, it is known that such membranes do not undergo thermal purification at any temperature below 700 ° C or below 700 ° C due to a lack of hydrogen or a mixture of impurities such as argon and oxygen atoms, or both.

An object of the present invention is to provide a semiconductor device with improved device characteristics.

Another object of the present invention is to provide a method for manufacturing a semiconductor device with improved device characteristics.

It is still another object of the present invention to provide a semiconductor device made of a microcrystalline semiconductor film having a low barrier at grain boundaries.

Further, another object of the present invention is to provide a method of manufacturing a semiconductor device made of a semiconductor film having a low barrier at grain boundaries.

These and other objects of the present invention have a crystal grain having a lattice distortian therein and having an average diameter of 30 μm-4 μm, preferably an average diameter of 30 μm-400 μm, as shown from the upper surface of the semiconductor film. It was achieved by using a semiconductor film containing (crtstal grain) and containing an oxygen impurity in the semiconductor film at a concentration of 7 x 10 atomic cm ^-3 or less, preferably at a concentration of 1 x 10 atomic cm ^-3 or less. Such a semiconductor film includes a microcrystallme semiconductor film and a polycrystalline semiconductor film having a microcrystalline structure.

Microscopically, crystals (grains) in the semiconductor film provide lattice distortion to each crystal (grain), so that the crystals (grains) come into close contact with neighboring crystals (grains). This results in the disappearance of the barrier in grain deposits and results in improved carrier mobility.

The semiconductor film according to the present invention differs from the above-described polycrystalline film without lattice distortion because impurities such as oxygen accumulate at grain boundaries so as to develop a barrier for moving carriers in the polycrystalline film without lattice distortion.

The film according to the invention has a lattice distortion inside and therefore has a barrier which is absent or negligible. Therefore, the electron mobility of the film according to the present invention is extremely increased up to 5 ~ 300 cm 2 / Vsec compared to the conventional semiconductor film.

The hydrogen concentration in the semiconductor film according to the present invention is preferably 5 atomic% or less.

The semiconductor film according to the present invention first deposits an amorphous (or substantially amorphous) semiconductor film on a substrate by sputtering in an atmosphere containing 100% hydrogen atmosphere or hydrogen and an inert gas as a main component, and then 450 It is prepared by crystallizing the amorphous semiconductor film in a temperature range of ˜700 ° C., generally 600 ° C.

The present invention is uniformly carried out by carrying out the sputtering process in a controlled atmosphere containing not more than 0.01% of oxygen and having at least 10% (relative to partial pressure) of hydrogen [with 5N (99.999%) or higher purity] added thereto. Hydrogen-mixed amorphous silicon films can be deposited, and extensive research has found that the films can be thermally crystallized by annealing at a temperature of generally 600 ° C. in the temperature range of 450-700 ° C. The present invention has been accomplished based on this finding.

According to one embodiment of the invention, an amorphous semiconductor film containing oxygen impurities at a concentration of 7 × 10 atom cm ⁻³ or less contains a semiconductor target containing oxygen impurities at a concentration of 5 × 10 atom cm ⁻³ or less. ) Is deposited by sputtering, and the resulting film is then crystallized with heat.

According to another embodiment of the present invention, the amorphous semiconductor film is 1 × 10 ^-8 Torr, under pressure, preferably a mixture comprising hydrogen and an inert gas into the evacuated chamber at a pressure below 1 × 10 ^-8 Torr By introducing a gas consisting of gas or 100% hydrogen, the internal pressure is preferably 5 x 10 ⁸ atom cm in a chamber controlled to a suitable pressure for sputtering in the pressure range of 10 ^-2 to 10 ^-4 torr. ^{It is} formed by sputtering a semiconductor target containing oxygen impurities at a concentration of ^-3 or less, and the resulting film is then crystallized by heat.

Example 1

An amorphous silicon (a-Si) film is deposited using a radio-frequency (RF) or high frequency magnetron sputtering apparatus, and then recrystallized to obtain a polycrystalline silicon semiconductor film containing a quasi-crystal (or anti-amorphous film). The semiconductor film, in which lattice distortion is induced, has an average diameter of 30 μs-4 μm, preferably 30 μs-400 μs, and a concentration of 7 × 10 ¹⁸ atoms cm ⁻³ or less, preferably 1 × 10 Crystal grains containing oxygen impurities up to ¹⁸ atomic cm ^-3 and hydrogen up to 5 atomic percent.

Referring to FIGS. 1A to 1E, a manufacturing process of a TFT (thin film transistor) according to the present invention is mentioned as follows. A 200 nm thick silicon oxide film 12 is deposited on the glass substrate 11 by RF magnetron sputtering from a single crystal silicon target under the following conditions.

Atmosphere: 100% O ₂

Film Deposition Temperature: 150 ℃

RF (13.56 MHz) output: 400 W

Pressure: 0.5Pa

An amorphous silicon film 13 having a thickness of 100 nm is further deposited by using RF magnetron sputtering, which can deposit a film at low impurity concentration to provide a channel formation region on the thus deposited silicon oxide film.

Back pressure is controlled to 1 × 10 ^-8 Torr or less, preferably 1 × 10 ^-8 Torr or less by using a turbo-molecular pump and a cryo pump.

A gas having a purity of 5N (99.999%) or more is supplied, and if necessary, an argon gas of 4N or more purity is used as the additive gas. The single crystal silicon used as the target should be reduced to an oxygen concentration of 5 × 10 ¹⁸ atom cm ⁻³ or less, for example 1 × 10 ¹⁸ atom cm ⁻³ , so that the oxygen impurities of the deposited film are controlled as low as possible. The deposition of the film is carried out in an atmosphere containing 10-100% hydrogen and 90% or less of inert gas (eg argon). For example, film deposition can be performed in a 100% hydrogen gas atmosphere. Film deposition is performed by sputtering from a high purity silicon target under the following conditions.

H ₂ (H ₂ + Ar) = 100% (partial pressure ratio)

Film Deposition Temperature: 150 ℃

RF (13.56MHz) output: 400W

Total pressure: 0.5Pa

Therefore, the obtained amorphous a-Si film 13 is subjected to thermal crystallization by maintaining the film at, for example, 600 ° C. for 10 hours at a temperature shift of 450 ° C. to 700 ° C. in a hydrogen or inert gas atmosphere.

In this embodiment, 100% hydrogen gas atmosphere is used. The crystallized film is called a microcrystalline (or semi-amorphous) film.

In this embodiment, the impurity content of the amorphous silicon film and the thermally crystallized film obtained therefrom is analyzed by secondary ion mass spectrometry (SIMS).

It can be seen that the oxygen content of the amorphous silicon film is 8 × 10 atoms cm ⁻³ , and the carbon content is 3 × 10 ¹⁸ atoms cm ⁻³ . By taking the silicon density 4 × 10 ²² atoms cm ⁻³ , it can be seen that the amorphous silicon film is 4 × 10 ²⁰ atoms cm ⁻³ , and this hydrogen content corresponds to 1 atomic%. The analysis was performed by taking the oxygen concentration of a single crystal silicon target of 1 × 10 ¹⁸ atomic cm ⁻³ as a standard, and the minimum value of the depth profile of the deposited film (concentration distribution along the direction perpendicular to the surface of the film) was determined by silicon oxide on the surface of the film. It is taken as a representative value because it is easily oxidized by the atmosphere to form. This impurity content value remains substantially unchanged after thermal crystallization, giving an oxygen impurity of 8 × 10 ¹⁸ atoms cm ⁻³ for the crystallized film. To further confirm this, the oxygen content is increased, for example, by adding a 0.1 cc / sec or 10 cc / sec N ₂ O gas stream during film deposition.

The oxygen content of the crystallized film is increased to 1 × 10 ²⁰ atom cm ⁻³ or 4 × 10 ²⁰ atom cm ⁻³ corresponding to the N ₂ O addition amount. However, such films with increased oxygen content can only be crystallized by increasing the annealing temperature above 700 ° C. or by annealing for more than five times longer than the process according to the invention.

From an industrial process point of view, treatment at temperatures below 700 [deg.] C., preferably at temperatures below 600 [deg.] C., is essential in view of the softening point of the glass substrate, which is also important for shortening the process time.

However, it has been found experimentally impossible to crystallize the amorphous silicon semiconductor film at a temperature of 450 ° C. or lower by a simple reduction in the concentration of impurities such as oxygen.

In addition, the present invention is realized by the use of a high quality sputtering apparatus. Therefore, if the oxygen concentration is increased to 1 × 10 ²⁰ atomic cm ⁻³ or more during film deposition and leaks or slight defects occur, a high quality semiconductor film according to the present invention may not be obtained.

It can be seen from the foregoing that control of the oxygen impurity concentration of 7 x 10 ²⁸ atomic cm ^-3 or less in the semiconductor film and crystallization of the film in the temperature range of 450 to 700 ° C are necessary for the realization of the present invention.

In preparing a film of germanium or a compound semiconductor of germanium and silicon, the annealing temperature for crystallization may be lowered by about 100 ° C. above the above-mentioned temperature range.

The thermally crystallized semiconductor film thus obtained includes lattice distortion therein. The laser Raman Spectra of such films results in peaks shifted toward lower frequencies compared to the peaks obtained in the spectrum for single crystal silicon (see Figure 4). The manufacturing process of (FET) is mentioned below.

First, the thermally crystallized silicon semiconductor film according to the present invention is subjected to device isolation patterning to obtain a structure as shown in FIG. 1A. Subsequently, the n ⁺ amorphous silicon semiconductor film 14 having a thickness of 50 nm was subjected to high pressure of 10 to 99% or more (80% in this embodiment) and 90% or less argon (19% in this embodiment) under partial pressure under the following conditions. And silicon crystals thermally crystallized by RF magnetron sputtering from a single crystal silicon target (containing oxygen of 1 × 10 ¹⁸ atoms cm ⁻³ ) in an atmosphere consisting of 0.1-10% PH ₃ (1% in this embodiment). Is deposited on.

Film Deposition Temperature: 150 ℃

RF (13.56MHz) output: 400W

Total pressure: 0.5Pa

The n a-Si semiconductor film mentioned above can be deposited by alternative PCVD processes. In addition, after the formation of the active layer, doping of impurities such as boron (B), phosphorus (P) and arsenic (As) can be performed by ion implantation to provide a source and a drain. .

The n a-Si film 14 thus obtained is then patterned to obtain the structure shown in FIG. 1B. As shown in FIG. 1C, a 100 nm thick silicon oxide film (gate insulator) 15 is placed thereon by RF magnetron sputtering from a single crystal silicon target or a synthesized crystal target in 100% oxygen atmosphere under the following conditions: Is deposited.

Film Deposition Temperature: 150 ℃

RF (13.56MHz) output: 400W

Total pressure: 0.5Pa

Next, contact holes are drilled in the membrane by patterning as shown in FIG. 1d. The TFT was formed by depositing a 300 nm thick aluminum film 16 by vacuum deposition on the structure shown in FIG. 1D, patterning the aluminum film, and thermal annealing the entire structure at 100% hydrogen at 375 ° C. for 30 minutes. The structure shown in Fig. 1e is finished. Thermal annealing in hydrogen is applied to the device to improve the device characteristics by lowering the interface level between the thermally crystallized silicon semiconductor film and the silicon oxide insulating film.

Referring to FIG. 1E, (S), (G), and (D) represent source electrodes, gate electrodes, and drain electrodes, respectively. A 100 x 100 mu m channel region 17 (Fig. 1e) is provided in the TFT of this embodiment.

In addition to the above embodiments referring to the process according to the invention, four further embodiments are mentioned below to further illustrate the effect of the invention. The following operation was carried out under the conditions for depositing an a-Si layer 13 (see FIG. 1a) using RF magnetron sputtering in which the ratio of hydrogen in the sputtering atmosphere and the concentration of oxygen contained in the deposited layer were changed according to the embodiment. In the examples, a TFT is manufactured.

Example 2

The TFT fabrication process as in Example 1 was carried out except that the atmospheric conditions were changed during sputtering for depositing the channel forming region 13 in FIG. 1A to provide the following mixed gas ratio (relative to partial pressure). do.

H ₂ / (H ₂ + Ar) = 0%

The deposited film thus obtained contains oxygen at a concentration of 2 × 10 ²⁰ atomic cm ⁻³ .

Example 3

The TFT fabrication process as in Example 1 is carried out, except that the atmospheric conditions are changed during sputtering for depositing the channel forming region 13 in FIG. 1A to provide the following mixed gas ratio (in partial pressure).

H ₂ / (H ₂ + Ar) = 20%

The deposited film thus obtained contains oxygen at a concentration of 7 × 10 ¹⁸ atoms cm ⁻³ .

Example 4

The TFT fabrication process as in Example 1 is carried out, except that the atmospheric conditions are changed during sputtering for depositing the channel forming region 13 in FIG. 1A to provide the following mixed gas rate (in partial pressure). .

H ₂ / (H ₂ + Ar) = 50%

The deposited film thus obtained contains oxygen at a concentration of 3 × 10 ¹⁸ atoms cm ⁻³ .

Example 5

The same TFT fabrication process as in Example 1 is carried out, except that the atmospheric conditions are changed during sputtering for depositing the channel forming region 13 in FIG. 1A to provide the following mixed gas ratio (in partial pressure). .

H ₂ / (H ₂ + Ar) = 80%

The deposited film thus obtained contains oxygen at a concentration of 1 × 10 ¹⁸ atomic cm ⁻³ .

The electrical properties of the films obtained in the above-described examples are compared as follows.

FIG. 2 shows carrier field mobility (μ) and hydrogen partial pressure ratio (P _H / P _Total = H ₂ ) in the channel portion (indicated by symbol 17 in FIG. 1e) of each TFT of Examples 1 to 5. / (H ₂ + Ar)) is a graph showing the relationship between. The plots of Figure 2 and their corresponding examples are listed in Table 1 below.

TABLE 1

According to FIG. 2, the film deposited under a hydrogen partial pressure of 0% results in a field mobility (μ) as low as 3 × 10 ⁻² cm 2 / Vsec because the oxygen concentration of the film is as high as 2 × 10 ²⁰ atomic cm ⁻³ . In contrast, significant high field mobility (μ) of 2 cm 2 / Vsec or even higher can be obtained in membranes having an oxygen concentration of 20% or less. Such effects can be assumed to be due to the addition of hydrogen and the cryopump. That is, hydrogen and oxygen react inside the chamber during sputtering to produce water, and the resulting water is effectively removed by the cryopump.

According to FIG. 3, there is shown a graph of the threshold voltage to hydrogen partial pressure ratio (P _H / P _TUTAL = H ₂ / (H ₂ + Ar)). Hydrogen partial pressure ratio (P _H / P _Total = H ₂ / (H ₂ + Ar)) and the corresponding numbers of the examples can be found in Table 1 above. The lower the threshold voltage, the lower the gate voltage can be achieved. Therefore, the lower the threshold voltage, the more preferable the device can be said. According to the results shown in FIG. 3, a normal off state with a threshold voltage of 8 V or less is obtained on a film deposited by sputtering performed under an atmosphere containing a high hydrogen partial pressure of 20% or more. This means that an apparatus (TFT in the present invention) which brings advantageous electrical properties can be obtained using a silicon semiconductor film obtained by crystallizing the once deposited a-Si film as the channel forming region 13 shown in FIG. 1A. .

The laser Raman spectrum of the silicon semiconductor film obtained by thermal crystallization of the a-Si film is given in FIG. In the figures the symbols are indicated in the spectrum, the corresponding numbers of the examples and the partial pressures of hydrogen used here are listed in Table 2 below.

TABLE 2

In FIG. 4, by comparing the spectra 43 or 44 with the spectra 42 or 41, the film sputtered under 100% hydrogen produces high crystallinity crystal grains as observed by its Raman spectrum. It can be seen that the crystals are crystallized so that the grains have an average diameter of 30 to 400 Hz, preferably an average diameter range of 100 to 200 Hz, as calculated from the half band width of the spectrum. It is also evident that the lattice distortion is provided to the grains because the peak value of this film is shifted toward the low wavefront relative to the peak (520 cm ⁻¹ ) of the single crystal silicon. These results most clearly characterize the present invention. That is, an a-Si film deposited by sputtering in an atmosphere in the presence of hydrogen has an effect only when subjected to thermal crystallization. Since the lattice of the crystal grains is distorted, the microcrystals exert a compressive force on each other.

This means that more intimate grain contact is realized at the grain boundaries, so that the accumulation of fluorine, such as oxygen, and the development of energy walls for the carriers are difficult to occur at such grain boundaries. Thus, high carrier field mobility can be expected in such films.

The thermocrystallized film according to the invention can also be characterized by the average diameter calculated from the counter-band of its X-ray diffraction spectrum instead of the counter-band of the above mentioned Raman spectrum.

The film thermally crystallized according to the present invention has an average diameter of 30 µm to 4 µm, preferably 30 µm to 400 µm, which is to be calculated from the inverse band width of the X-ray diffraction spectrum of the semiconductor film.

In general, in the TFT which is a field effect transistor, if the drain voltage V _D is low, the drain current I _D may be related to the drain voltage V _D by the following equation. [Solid State Electronics, Vol 24, No 11, (1981) PP, 1059, Printed in Great Britain]

I _D = (W / L) μC (V ₆ -V _T ) V _B

Where W is the channel width, L is the channel length, μ is the field mobility, C is the capacitance of the gate oxide film, V ₆ is the gate voltage, and V _T is the threshold voltage.

In the above embodiment, argon is used as the inert gas in sputtering. However, the inert gas is not limited thereto, and plasma of other gases such as helium and also reactive gases such as SiH ₄ and Si ₂ H may be partially added to the sputtering atmosphere.

The a-Si film can be deposited by RF magnetron sputtering under certain conditions as required, provided that each condition satisfies the following range.

Hydrogen partial pressure ratio: 10 ~ 100%, film deposition temperature: room temperature ~ 500 ℃, RF output: 500 ~ 100GHz, power supply 100W ~ 10MW.

In addition, the sputtering apparatus can be combined with a pulse energy generator. Powerful light beams (having wavelengths in the range of 100-500 nm) can be irradiated simultaneously to perform light sputtering.

The proposed processes enable the production of hydrogen plasma from light-weight atomic reactors, thereby effectively producing useful cations in sputtering.

In such a manner, hydrogen or hydrogen atoms can be uniformly dispersed in the film during deposition by sputtering, which is 7 × 10 ¹⁸ atoms cm ⁻³ or less, preferably 1 × 10 ¹⁸ atoms cm ⁻³ or less This results in a membrane that is reduced in content. In addition, the previously mentioned reaction gases can likewise be used in the present processes.

In the above embodiment, the a-Si film was used as an amorphous semiconductor film. However, the present invention can also be applied to films of compound semiconductors represented by germanium or Si _x Ge _1-M (0 <X <1). These films can be P-type, N-type or intrinsic semiconductors.

While the invention has been described in detail with reference to particular embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made to the invention without departing from the spirit and scope of the invention.

Claims (27)

An insulated gate field effect semiconductor device comprising: at least one semiconductor island formed on an insulating surface as an active region of a field effect semiconductor device; and a gate electrode provided adjacent to the semiconductor island having an insulating film therebetween, wherein the semiconductor island. A silicon having a grain structure having a crystal grain with an average diameter of 30 μm to 4 μm, as calculated from the X-ray diffraction and the opposite band width of one of the Raman spectra of the island and having a 7 × 10 ¹⁸ in the semiconductor island. An insulated gate electric field containing an oxygen concentration of atomic cm ^-3 or less, the Raman spectrum of the semiconductor island being shifted toward the lower wavefront with respect to 520 cm ^-1 , and wherein the insulating film extends beyond the lateral energy of the semiconductor island Effect semiconductor device. The insulated gate field effect semiconductor device according to claim 1, wherein said semiconductor island contains hydrogen of 5 atomic% or less. The insulated gate field effect semiconductor device according to claim 1, wherein said semiconductor island is comprised of a semiconductor selected from the group consisting of a P-type semiconductor, an n-type semiconductor, and an intrinsic semiconductor. Amorphus containing oxygen impurity at a concentration of 7 × 10 ¹⁸ atomic cm ^-3 or less by sputtering a semiconductor target containing oxygen impurity at a concentration of 5 × 10 ¹⁸ atom cm ^-3 or less in an atmosphere of hydrogen at 10% or more by partial pressure. A method of manufacturing a semiconductor device, comprising forming a semiconductor film and crystallizing the amorphous semiconductor film at a temperature of 450 ° C to 700 ° C. The method for manufacturing a semiconductor device according to claim 4, wherein the crystallized semiconductor film has lattice distortion therein and has crystal grains having an average diameter of 30 m to 4 m as observed from an upper surface of the crystallized semiconductor film. The method of manufacturing a semiconductor device according to claim 4, wherein the atmosphere is further comprised of an inert gas of 90% or less by partial pressure. The method of manufacturing a semiconductor device according to claim 6, wherein the inert gas is a gas selected from the group consisting of argon and helium. The method of manufacturing a semiconductor device according to claim 4, wherein the semiconductor target is made of silicon. 6. The method of claim 5, wherein the average diameter is calculated from a reverse bandwidth selected from the group consisting of the opposite bandwidth of the Raman spectrum of the crystallized semiconductor film and the opposite bandwidth of the X-ray diffraction spectrum of the crystallized semiconductor film. A vacuum target is evacuated to a chamber at a pressure of 1 × 10 ^-8 Torr or less, a gas of hydrogen is injected into the chamber at a sputtering pressure, and a semiconductor target containing oxygen impurities at a concentration of 5 × 10 ¹⁸ atomic cm ^-3 or less Sputtering at the sputtering pressure to form an amorphous semiconductor film, and crystallizing the amorphous semiconductor film at a temperature of 450 ° C. to 700 ° C., wherein the sputtering is performed in an atmosphere composed of at least 10% hydrogen by partial pressure. Method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device according to claim 10, wherein the crystallized semiconductor film has a lattice distortion therein and crystal grains having an average diameter of 30 µm to 4 µm as viewed from the upper surface of the crystallized semiconductor film. The method of manufacturing a semiconductor device according to claim 10, wherein the gas is further comprised of an inert gas, and the atmosphere is made of an inert gas of 90% or less by partial pressure. The method of manufacturing a semiconductor device according to claim 12, wherein the inert gas is a gas selected from the group consisting of argon and helium. The method of manufacturing a semiconductor device according to claim 10, wherein the semiconductor target is made of silicon. The method of manufacturing a semiconductor device according to claim 10, wherein said gas consists only of hydrogen. 12. The method of claim 11, wherein the average diameter is calculated from a reverse bandwidth selected from the group consisting of a reverse bandwidth of the Raman spectrum of the crystallized semiconductor film and a reverse bandwidth of the X-ray diffraction spectrum of the crystallized semiconductor film. The method of manufacturing the semiconductor device according to claim 10, wherein the sputtering pressure is 10 ⁻² to 10 ⁻⁴ torr. 2. The insulated gate field effect semiconductor device of claim 1 wherein said insulating film constitutes a gate insulator of said device. 2. The insulated gate field effect semiconductor device according to claim 1, wherein said insulating film extends on a portion other than a portion of said insulating surface on which said semiconductor island is formed. The insulating gate field effect semiconductor device of claim 1, further comprising a gate electrode formed on the insulating layer, wherein the gate electrode comprises aluminum. The insulated gate field effect semiconductor device of claim 1, wherein the semiconductor island comprises an element selected from the group consisting of silicon and germanium. The insulated gate field effect semiconductor device according to claim 1, wherein said semiconductor island comprises a compound semiconductor Si _x Ge _1-M (0 <X <1). A substrate having an insulating surface; A semiconductor island provided on said insulating surface and comprising silicon and germanium; And a gate electrode provided adjacent to the semiconductor island having an insulating film therebetween, wherein the insulating film extends beyond a side edge of the semiconductor island, and the entirety of the insulating surface is covered by the semiconductor island and the insulating film. Gate field effect transistor. A substrate having an insulating surface; A semiconductor island provided on said insulating surface and comprising silicon and germanium; And a gate electrode provided adjacent to the semiconductor island having an insulating film therebetween, wherein the insulating film extends outwardly beyond the side edges of the semiconductor island and above the insulating surface on which the semiconductor island is provided. An insulated gate field effect transistor extending on a region other than the region. 24. The semiconductor device of claim 23, wherein a source electrode and a drain electrode are connected to the semiconductor island through at least one opening in the insulating film, the insulating film directly covering the entire surface of the semiconductor island through at least one hole in the insulating film, wherein the insulating film is a semiconductor. An insulated gate field effect transistor that directly covers the entire surface of a semiconductor island except for connection of the source and drain electrodes to the island. The method of claim 4, wherein the crystallization step is performed by imparting electron mobility of 5 to 300 cm 2 / Vsec to the resulting semiconductor film. The manufacturing method of a semiconductor device according to claim 10, wherein said crystallization step is performed by a method of imparting electron mobility of 5 to 300 cm 2 / Vsec to the resulting semiconductor film.