KR950009661Y1 - Infrared rays seramic eouission - Google Patents
Infrared rays seramic eouission Download PDFInfo
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- KR950009661Y1 KR950009661Y1 KR2019900000952U KR900000952U KR950009661Y1 KR 950009661 Y1 KR950009661 Y1 KR 950009661Y1 KR 2019900000952 U KR2019900000952 U KR 2019900000952U KR 900000952 U KR900000952 U KR 900000952U KR 950009661 Y1 KR950009661 Y1 KR 950009661Y1
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- South Korea
- Prior art keywords
- far
- infrared
- ceramic
- conductive film
- infrared radiation
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- 239000000919 ceramic Substances 0.000 claims description 25
- 230000005855 radiation Effects 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 8
- 229910001120 nichrome Inorganic materials 0.000 claims description 7
- 239000003973 paint Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000005524 ceramic coating Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HEHRHMRHPUNLIR-UHFFFAOYSA-N aluminum;hydroxy-[hydroxy(oxo)silyl]oxy-oxosilane;lithium Chemical compound [Li].[Al].O[Si](=O)O[Si](O)=O.O[Si](=O)O[Si](O)=O HEHRHMRHPUNLIR-UHFFFAOYSA-N 0.000 description 1
- CNLWCVNCHLKFHK-UHFFFAOYSA-N aluminum;lithium;dioxido(oxo)silane Chemical compound [Li+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O CNLWCVNCHLKFHK-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 229910052670 petalite Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 210000001215 vagina Anatomy 0.000 description 1
- 229910052644 β-spodumene Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
- H05B2203/004—Heaters using a particular layout for the resistive material or resistive elements using zigzag layout
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Resistance Heating (AREA)
- Surface Heating Bodies (AREA)
Abstract
내용 없음.No content.
Description
제1도는 본 고안 세라믹 방사체의 일부 절결 구조도.1 is a partially cutaway structure diagram of the ceramic radiator of the present invention.
제2도는 300℃에서의 방사 효율을 나타낸 그래프.2 is a graph showing the spinning efficiency at 300 ℃.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 절연기판 2 : 도전막1 Insulation substrate 2 Conductive film
3 : 원적외선 방사 세라믹 4 : 단자3: far-infrared radiation ceramic 4: terminal
본 고안은 면상 원적외선 세라믹 방사체의 구조에 관한 것으로 특히, 기판 상면에 지그지그형 도전막을 형성하고, 그 상면에 세라믹 층을 형성시켜 난방기, 건조기 또는 조리기등에 적용하도록 한 면상 원적외선 세라믹 방사체에 관한 것이다.The present invention relates to a structure of a planar far-infrared ceramic radiator, and more particularly, to a planar far-infrared ceramic radiator formed by applying a jig-zig conductive film on the upper surface of the substrate and forming a ceramic layer on the upper surface thereof to be applied to a heater, a dryer, or a cooker.
종래의 원적외선 방사체로는 원적외선 방사 세라믹을 금속 표면에 소부하고, 그 뒷면에 전기적 절연물 중의 니크롬선을 설치한 후, 보온층을 형성시키는 것[대한민국 공개실용신안공보 제89-18437호]과, 도자기질 중에 니크롬선을 설치하여 일체로 형성시키고, 그 표면에 원적외선 방사 도료를 도포하여 고온에서 소성시키는 것등을 들 수 있다.Conventional far-infrared radiators include: baking infrared-infrared radiation ceramics on a metal surface, installing nichrome wire in an electrical insulator on the back, and then forming a heat insulating layer [Korean Utility Model Publication No. 89-18437], ceramics The nichrome wire is provided in the vagina, and it forms integrally, The far-infrared radiation coating is apply | coated on the surface, and it bakes at high temperature.
상기의 니크롬선을 설치하고 보온충과 원적외선 방사 세라믹을 형성하는 종래의 기술은, 와이어 히터(니크롬선) 하부에 열차단용 단열부를 설치하고, 그 상부에는 열원을 열적외선으로 변환시키는 원적외선 방사 코팅부와 보온부를 형성하고, 표면부에 원적외선 방사 세라믹 코팅부를 형성하여 구성된 것으로서, 이와같은 종래의 세라믹 방사체는 그 구조가 다단계에 걸친 층층의 구조이기 때문에 매우 복잡하고, 가격이 고가일 뿐만 아니라, 방사체가 매우 두꺼워 그 무게가 무겁고, 열 용량이 크기 때문에 전류를 흘려 설정된 온도까지 상승시키는데 많은 시간이 소요되며, 또한, 미세한 온도 조정이 어렵고, 특히 니크롬선을 사용하기 때문에 단선이 일어나기 쉬우며, 일단 단선되면 재사용이 불가능한 문제점이 있었다.The conventional technique of installing the nichrome wire and forming a thermal insulation and far-infrared radiation ceramics includes a far-infrared radiation coating portion for installing a thermal insulation portion under the wire heater (nichrome wire), and converting a heat source into thermal infrared rays thereon. It is composed by forming an insulating part and forming a far-infrared radiation ceramic coating part on the surface part, and this conventional ceramic radiator is very complicated because its structure is a multi-layered layer structure, and it is expensive and the radiator is very Because of its heavy weight and large heat capacity, it takes a long time to flow up to the set temperature by flowing current, and it is difficult to adjust the temperature finely, especially because nichrome wire is used. There was this impossible problem.
본 고안은 이와같은 종래의 문제점을 해결하기 위하여, 도전막을 종래와 같이 와이어로 형성하지 않고 도전성 도료를 소부하여 반열체의 단선을 방지하고, 그 상면에 원적외선 방사체 세라믹을 소부시켜 높은 가열 효율을 갖도록 한 것으로서, 얇은 운모판과 같은 절연 기판의 한쪽면 또는 양면에 지그재그형으로된 은이나 구리의 도전막을 소부하고, 그의 상면에 원적외선 방사 세라믹을 소부시켜 세라믹 방사체를 형성하였기 때문에, 방사체가 매우 얇고, 저가이며, 동시에 열용량이 작아 미세한 온도 조정이 가능하고, 특히 도전성 됴로의 소부로 인해 면 발열체가 단선되는 것을 방지할 수 있도록 한 면상 원적외선 세라믹 방사체를 제공함을 목적으로 하며, 이하, 첨부된 도면을 참조하여 본 고안을 상세히 설명하면 다음과 같다.In order to solve this problem, the present invention does not form a conductive film with a wire as in the prior art, and the conductive paint is baked to prevent disconnection of the heat radiator, and the far-infrared radiator ceramic is baked on the upper surface to have high heating efficiency. In this case, since a conductive film of silver or copper in a zigzag shape is baked on one or both surfaces of an insulating substrate such as a thin mica plate, and a far-infrared radiation ceramic is baked on its upper surface to form a ceramic radiator, the radiator is very thin, It is an object of the present invention to provide a planar far-infrared ceramic radiator which is inexpensive and at the same time has a small heat capacity, which enables fine temperature adjustment and prevents the surface heating element from disconnecting due to the burning of the conductive furnace. Referring to the present invention in detail as follows.
제1도에 나타낸 바와 같이 본 고안의 면상 원적외선 세라믹 방사체는, 와이어 히터(니크롬선)의 아래에 단열부를 형성하고, 그 상부에는 원적외선 방사 코팅부와 보온부 및 원적외선 방사 세라믹 코팅부를 차례로 형성하여 구성되는 원적외선 방사체에 있어서. 절연기판(1) 상면에 전원(AC) 공급단자(4)와 연결되는 지그재그형 도전막(2)을, 도전성 도료를 소부시켜 형성하고, 상기 도전성 도료를 소부시켜 형성된 도전막(2) 상면에는 원적외선 방사 세라믹(3)을 소부시켜 형성하여서 구성됨을 특징으로 하는 면상 원적외선 세라믹 방사체이다.As shown in FIG. 1, the planar far-infrared ceramic radiator according to the present invention is formed by forming a heat insulating portion under a wire heater (nichrome wire), and forming a far-infrared radiation coating portion, a heat insulation portion, and a far-infrared radiation ceramic coating portion on top thereof. In the far infrared emitters become. A zigzag conductive film 2 connected to the power supply (AC) supply terminal 4 is formed on the upper surface of the insulating substrate 1 by baking a conductive paint, and on the upper surface of the conductive film 2 formed by baking the conductive paint. It is a planar far-infrared ceramic radiator characterized by being formed by baking the far-infrared radiation ceramic 3.
이와같이 구성된 본 고안의 작용 효과를 제2도를 참조하여 설명하면 다음과 같다.If described with reference to Figure 2 the effect of the present invention configured as described above.
먼저, 0.3㎜∼0.5㎜의 두께를 갖고 운모로 된 절연기판(1)의 표면에 은이나 구리로 된 도전막(2)을 소부시키게 되는데, 이때 도전성 도료는 4μm∼20μm의 두께로 도포하여 건조시킨 다음, 대략 600℃∼1000℃ 온도 사이에서 가열시켜 고착시키게 되며, 도전막(2)의 두께를 조정하게 되면, 임의의 전기 저항을 얻을 수 있게 된다.First, the conductive film 2 made of silver or copper is baked on the surface of the insulating substrate 1 made of mica with a thickness of 0.3 mm to 0.5 mm. In this case, the conductive paint is applied to a thickness of 4 μm to 20 μm and dried. Then, the substrate is heated and fixed at a temperature of approximately 600 ° C. to 1000 ° C., and when the thickness of the conductive film 2 is adjusted, an arbitrary electric resistance can be obtained.
이후, 도전막(2) 상면에 원적외선 방사 세라믹(3)을 소부시키게 되는데, 이때 이 원적외선 방사 세라믹(3)은 유약을 점착시키거나, 스프레이 코팅(Spray Coating)방법 등에 의해 도전막(2) 상면에 도포한 후, 1000℃∼1300℃ 온도로 소성하여 유약에 β-스포듀민(Spodumene) 결정을 생성시켜 열 팽창이 작은 원적외선 방사 세라믹(3)을 형성한다.Subsequently, the far-infrared radiation ceramic 3 is baked on the upper surface of the conductive film 2, wherein the far-infrared radiation ceramic 3 is attached to the upper surface of the conductive film 2 by applying a glaze or spray coating method. After coating on the substrate, it is calcined at a temperature of 1000 ° C to 1300 ° C to generate β-spodumene crystals in the glaze to form a far-infrared radiation ceramic 3 having low thermal expansion.
이때 β-스포듀민은 Li2O, Al2O3, 4SiO2의 화학식을 갖는 것으로, 천연으로 나오는 페틀라이트(Petalite)를 사용하여 유리상에 석출, 현락시킬 수 있다.The β- sports dyumin is that having the formula of Li 2 O, Al 2 O 3 , 4SiO 2, it is possible to use the light Petals (Petalite) occurrence of a natural precipitation, hyeonrak the glass phase.
또한, 도전성 도료로는 SiC, C, TiC, TiN, MoSi2중의 1종 또는 2종 이상을 고착제인 규산나트륨 수용액 중에 유기물 분산제로 분산 혼탁시킨 것이나, Ag 및 Cu 페이스트(Paste)를 사용하고, 원적외선 방사 세라믹층(3)은 xLi2O. (1-x)CaO. xA12O3. 8xSiO2(x;0 5∼0.8)의 조성을 갖는 유약을 1000℃∼1300℃에서 소성하여 생성하게 된다.As the conductive paint, one or two or more of SiC, C, TiC, TiN, and MoSi 2 are dispersed and turbid in an aqueous solution of sodium silicate as a fixing agent, and Ag and Cu paste are used, and far infrared rays are used. The radiating ceramic layer 3 is made of xLi 2 O. (1-x) CaO. xA1 2 O 3 . A glaze having a composition of 8xSiO 2 (x; 0 5 to 0.8) is produced by firing at 1000 ° C to 1300 ° C.
따라서, 단자(4)를 통해 흐르는 전류가 도전막(2)을 통하여 흐르게 되는데, 이 경우 도전막(2)의 두께에 따라 흐르는 전류의 양에도 다수의 차이를 일으키게 된다.Therefore, a current flowing through the terminal 4 flows through the conductive film 2, which causes a large number of differences in the amount of current flowing according to the thickness of the conductive film 2.
이때 도전막(2)의 고유 저항이 대체로 10-4Ω.㎝∼10-6Ω.㎝로 균일한 전류가 흐르게 되므로 발열면의 온도분포가 균일하게 된다.At this time, since a uniform current flows in the resistivity of the conductive film 2 to approximately 10 −4 Ω.cm to 10 −6 Ω.cm, the temperature distribution of the heat generating surface is uniform.
또한, 도전막(2)에서 발생한 열은 원적외선 방사 세라믹(3)을 통해 그 온도에 해당하는 원적외선으로 변형되어 원적외선을 방사하게 되고, 이 원적외선 방사 세라믹(3)층은 원적외선을 방사하게 됨과 동시에 그 강고한 막에 의해 도전막(2)을 보호하게 되고,10-15Ω㎝정도의 높은 체적 저항에 의해 전기적 절연성을 갖게되며, 제2도는 300℃에서의 면상 원적외선 세라믹 방사체의 원적외선 효율을 그래프로 나타낸 것이다.In addition, the heat generated in the conductive film 2 is transformed into the far infrared rays corresponding to the temperature through the far infrared radiation ceramics 3 to emit far infrared rays, and the far infrared radiation ceramics 3 layer radiates far infrared rays and simultaneously The conductive film 2 is protected by a firm film, and has electrical insulation by a high volume resistivity of about 10 -15 Ωcm. FIG. 2 is a graph showing the far-infrared efficiency of the planar far-infrared ceramic radiator at 300 ° C. It is shown.
이상에서 설명한 바와같이, 본 고안에 의하면 그 구조가 간단하고 얇아 생산원가가 절감되고, 열용량이 작아 미세한 온도 조정이 가능하며, 방사면의 온도 분포가 균일하고, 특히 도전막을 도전성 도료로 소부하므로서 발열체의 단선을 방지할 수 있고, 4μm∼30μm의 범위의 원적외선을 방사하므로서 가열 효율이 매우 높은 효과를 얻을 수 있는 것이다.As described above, according to the present invention, the structure is simple and thin, so that the production cost is reduced, the heat capacity is small, the temperature can be finely adjusted, the temperature distribution of the radiating surface is uniform, and the heating element is particularly baked by the conductive film. It is possible to prevent the disconnection of and to obtain the effect of very high heating efficiency by emitting far infrared rays in the range of 4 µm to 30 µm.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019900000952U KR950009661Y1 (en) | 1990-01-30 | 1990-01-30 | Infrared rays seramic eouission |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019900000952U KR950009661Y1 (en) | 1990-01-30 | 1990-01-30 | Infrared rays seramic eouission |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR910014851U KR910014851U (en) | 1991-08-31 |
| KR950009661Y1 true KR950009661Y1 (en) | 1995-11-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019900000952U Expired - Fee Related KR950009661Y1 (en) | 1990-01-30 | 1990-01-30 | Infrared rays seramic eouission |
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| Country | Link |
|---|---|
| KR (1) | KR950009661Y1 (en) |
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1990
- 1990-01-30 KR KR2019900000952U patent/KR950009661Y1/en not_active Expired - Fee Related
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| Publication number | Publication date |
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| KR910014851U (en) | 1991-08-31 |
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