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KR940016554A - 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치 - Google Patents

정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치 Download PDF

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Publication number
KR940016554A
KR940016554A KR1019930028254A KR930028254A KR940016554A KR 940016554 A KR940016554 A KR 940016554A KR 1019930028254 A KR1019930028254 A KR 1019930028254A KR 930028254 A KR930028254 A KR 930028254A KR 940016554 A KR940016554 A KR 940016554A
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groove
electrostatic chuck
substrate
gas
mounting table
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KR1019930028254A
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KR100238629B1 (ko
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겐지 이시카와
미쓰아키 고미노
데루오 이와타
다다시 미쓰이
Original Assignee
이노우에 아키라
도오교오 에레구토론 가부시끼가이샤
이노우에 쥰이치
도오교오 에레구토론 야마나시 가부시끼가이샤
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Priority claimed from JP35524092A external-priority patent/JPH06188305A/ja
Priority claimed from JP35470992A external-priority patent/JP3021217B2/ja
Priority claimed from JP8923993A external-priority patent/JPH06275546A/ja
Application filed by 이노우에 아키라, 도오교오 에레구토론 가부시끼가이샤, 이노우에 쥰이치, 도오교오 에레구토론 야마나시 가부시끼가이샤 filed Critical 이노우에 아키라
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Publication of KR100238629B1 publication Critical patent/KR100238629B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

반도체 웨이퍼의 플라스마 에칭장치는 진공처리실내에 설치된 서셉터를 구비한다. 서셉터의 재치면에 열전달 가스를 통하기 위한 홈이 형성된다. 홈은 재치면의 외연에 따라 형성된 환형상홈을 구비하고, 여기에 서셉터를 수직으로 관통하는 가스 통로가 접속된다. 홈을 덮도록 기밀한 상태에서 시일형상의 정전척이 서셉터의 재치면에 첩착된다. 정정척에는 복수의 관통구멍이 형성되고, 이들은 홈에 따라 또 그 바로위에 설치된다. 가스통로, 홈 및 관통구멍을 통하여 종존척과 반도체 웨이퍼와의 사이에 열전달가스가 도입된다.
열전달가스는 서셉터 하부에 설치된 액체 질소원으로 부터 냉열을 웨이퍼에 전달하는 것에 기여한다.

Description

정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명에 관한 플라즈마 에칭장치를 나타내는 개략 단면도, 제 2 도는 제 1 도에 나타낸 장치의 재치대를 나타내는 전개 사시도, 제 3 도는 제 1 도에 나타낸 재치대의 서셉터를 나타내는 확대 단면도, 제 4 도는 제 1 도에 나타낸 장치를 포함하는 에칭 시스템을 나타내는 개략 단면도.

Claims (20)

  1. 피처리면으로 되는 주면과 반대측의 배면을 가지는 기판을 유지하는 재치대로서; 상기 기판을 그 상기 배면을 통하여 지지하기 위한 지지면을 가지는 지지대본체와, 상기 지지대에는 홈이 형성된 것과, 상기 재치대 본체에는 상기 홈과 연통하는 가스통로가 형성된 것과, 상기 기판의 온도를 제어하기 위한 상기 재치대 본체에 내장된 열원과, 상기 홈을 덮도록 배면이 상기 지지면에 기밀한 상태로 접착된 시일형상의 정전척과, 상기 정전척에는 복수의 관통구멍이 형성된 것과, 상기 관통구멍은 상기 홈에 따라 또, 그 바로위에 설치된 것과, 상기 정전척에는 접속된 전원수단과, 상기 가스통로에 열전달 가스를 공급하는 수단과, 상기 열전달 가스는 가스 홈 및 관통구멍을 통하여 상기 기판과 상기 정전척과의 사이에 도입되고, 상기 열원으로부터 열에너지를 상기 기판에 전달하는 것에 기여하는 것과, 를 구비하는 정전척을 가지는 재치대.
  2. 제 1 항에 있어서, 상기 홈의 개구면적은 상기 정전척의 배면의 면적의 15% 이하인 정전척을 가지는 재치대.
  3. 제 2 항에 있어서, 상기 홈이 상기 정전측이 외주연에 따르도록 형성된 무단루프부를 구비하고, 상기 무단루프부는 상기 정전척의 외주면부 보다도 5mm이내의 영역에 대응하도록 상기 지지면에 형성되는 정전척을 가지는 재치대.
  4. 제 3 항에 있어서, 상기 홈은 0.5~3mm의 폭, 0.5mm 이상의 깊이를 가지는 정전척을 가지는 재치대.
  5. 제 4 항에 있어서, 상기 무단루프부를 단면적이 2~4mm2인 정전척을 가지는 재치대.
  6. 제 5 항에 있어서, 상기 홈이 단면적이 2~4mm2의 큰홈부와 단면적이 0.5~1.0mm2의 적은 홈부를 구비하는 정전척을 가지는 재치대.
  7. 제 6 항에 있어서, 상기 가스통로가 상기 큰 홈부에 직접 접속되는 정전척을 가지는 재치대.
  8. 제 1 항에 있어서, 상기 기판을 상하로 이동시키기 위하여 상기 정전척으로부터 돌출가능한 핀(s)와, 이들을 수납하기 위한 상기 재치대에 형성된 보조구멍(s)와, 를 더 구비하고, 상기 보조구멍이 상기 홈과 연통하도록 설치된 정전척을 가지는 재치대.
  9. 제 1 항에 있어서, 상기 가스통로에 이온화된 가스를 공급하는 수단을, 더 구비하고, 상기 이온화된 가스는 가스 홈 및 관통구멍을 통하여 상기 기판과 상기 정전척과의 사이에 도입되고, 상기 기판 및 상기 정전척을 전하제거하는 것에 기여하는 정전척을 가지는 재치대.
  10. 제 1 항에 있어서, 상기 지지면이 반도체 웨이퍼를 지지하기 위한 면을 구비하는 정전척을 가지는 재치대.
  11. 피처리면으로 되는 주면과, 반대측의 배면을 가지는 기판을 재치대에 지지하면서 처리가스의 플라즈마를 사용하여 상기 피처리면을 처리하는 플라즈마 처리장치로서; (a) 상기 기판을 수납하기 위한 처리실과, (b) 상기 처리실에 상기 처리가스를 공급하기 위한 수단과, (c) 상기 처리실을 배기함과 동시에, 진공상태로 설정하기 위한 수단과, (d) 상기 처리실내에서 상기 처리가스를 플라즈마와 하기 위한 수단과, (e) 상기 처리실내에 설치된 상기 재치대와, 상기 재치대가 그 기판을 그 상기 배면을 통하여 지지하기 위한 지지면을 가지는 재치대 본체와, 상기 지지면에는 홈이 형성된 것과, 상기 재치대 본체에는 상기 홈가 연통하는 가스통로가 형성된 것과, 상기 기판의 온도를 제어하기 위한 상기 재치대 본체에 내장된 열원과, 상기 홈을 덮도록 배면이 상기 지지면에 기밀한 상태로 접착된 시일형상의 정전척과, 상기 정전척에는 복수의 관통구멍이 형성된 것과, 상기 관통구멍은 상기 홈에 따라 또, 그 바로 위에 설치된 것과, 상기 정전척에 접속된 전원수단과, 상기 가스통로에 열전달 가스를 공급하는 수단과, 상기 열전달 가스는, 상기 홈 및 관통구멍을 통하여 상기 기판과 상기 정전척과의 사이에 도입되고, 상기 열원으로부터 열에너지를 상기 기판에 전달하는 것에 기여하는 것과, 를 구비하는 플라즈마 처리장치.
  12. 제11항에 있어서, 상기 홈의 개구면적은 상기 정전척 배면의 면적의 15% 이하인 플라즈마 처리장치.
  13. 제12항에 있어서, 상기 홈이 상기 정전척의 외주연에 따르도록 형성된 무단루프부를 구비하고, 상기 무단루프부는 상기 정전척의 외주연보다도 5mm 이내의 영역에 대응하도록 상기 지지면에 형성딘 플라즈마 처리장치.
  14. 제13항에 있어서, 상기 홈은 0.5~3mm의 폭, 0.5mm 이상의 깊이를 가지는 플라즈마 처리장치.
  15. 제14항에 있어서, 상기 무단루프부를 단면적이 2~4mm2인 플라즈마 처리장치.
  16. 제15항에 있어서, 상기 홈이 단면적이 2~4mm2의 큰홈부와 단면적이 0.5~1.0mm2의 적은 홈부를 구비한 플라즈마 처리장치.
  17. 제16항에 있어서, 상기 가스통로가 상기 큰 홈부에 직접 접속되는 플라즈마 처리장치.
  18. 제11항에 있어서, 상기 기판을 상하로 이동시키기 위하여 상기 정전척으로부터 돌출가능한 핀(s)와, 이들을 수납하기 위한 상기 재치대에 형성된 보조구멍(s)와, 를 더 구비하고, 상기 보조구멍이 상기 홈과 연통하도록 설치된 플라즈마 처리장치.
  19. 제11항에 있어서, 상기 가스통로에 이온화된 가스를 공급하는 수단을 더 구비하고, 상기 이온화된 가스는 가스 홈 및 관통구멍을 통하여 상기 기판과 상기 정전척과의 사이에 도입되고, 상기 기판 및 상기 정전척을 전하제거하는 것에 기여하는 플라즈마 처리장치.
  20. 제11항에 있어서, 상기 지지면이 반도체 웨이퍼를 지지하기 위한 면을 구비하는 플라즈마 처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930028254A 1992-12-17 1993-12-17 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치 KR100238629B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP92-354709 1992-12-17
JP35524092A JPH06188305A (ja) 1992-12-17 1992-12-17 被吸着体の離脱装置および被吸着体の離脱方法およびプラズマ処理装置
JP92-355240 1992-12-17
JP35470992A JP3021217B2 (ja) 1992-12-17 1992-12-17 静電チャック
JP8923993A JPH06275546A (ja) 1993-03-24 1993-03-24 プラズマ処理装置
JP93-89239 1993-03-24

Publications (2)

Publication Number Publication Date
KR940016554A true KR940016554A (ko) 1994-07-23
KR100238629B1 KR100238629B1 (ko) 2000-01-15

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US (1) US5382311A (ko)
KR (1) KR100238629B1 (ko)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100378187B1 (ko) * 2000-11-09 2003-03-29 삼성전자주식회사 정전척을 구비한 웨이퍼 지지대 및 이를 이용한 웨이퍼 디척킹 방법
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