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KR940008128A - Hydrogenation of Polysilicon Thin Film Transistors Using Spin-on Glass and Oxygen Plasma - Google Patents

Hydrogenation of Polysilicon Thin Film Transistors Using Spin-on Glass and Oxygen Plasma Download PDF

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Publication number
KR940008128A
KR940008128A KR1019920017793A KR920017793A KR940008128A KR 940008128 A KR940008128 A KR 940008128A KR 1019920017793 A KR1019920017793 A KR 1019920017793A KR 920017793 A KR920017793 A KR 920017793A KR 940008128 A KR940008128 A KR 940008128A
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South Korea
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sog
thin film
plasma
film transistor
polysilicon
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KR1019920017793A
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Korean (ko)
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KR950009805B1 (en
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하형찬
최동규
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김주용
현대전자산업 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 SOG와 O2플라지마를 이용한 폴리실리콘 박막트랜지스터의 수소화 처리 방법에 관한 것으로, 박막트랜지스터 오프시 누설전류를 감소시키고 박막 트랜지스터 동작시 구동전류를 증가시키는 것에 의한 폴리실리콘박막트랜지스터 특성을 향상시키기 위해 예정된 두께의 SOG를 코팅한 후 O2플라즈마 처리를 향하여 SOG 필름내의 수소 함량을 증가시키는 단계와, SOG를 열처리 할때 SOG 박막내의 수소가 외부로 빠져나가는 것을 억제하기 위하여 SOG상부에 실리콘 산화막 또는 절연막을 증착시키는 단계와, 일정온도에서 일정시간 동안 열처리를 행하여 SOG박막내의 수소를 채널 폴리실리콘에 침투시키는 단계와, 보호층으로 증착된 실리콘 산화막 또는 절연막과 SOG를 제거하는 단계로 이루어지는 기술에 관한 것이다.The present invention relates to a hydrogenation method of a polysilicon thin film transistor using SOG and O 2 plasma, and improves the polysilicon thin film transistor characteristics by reducing leakage current when the thin film transistor is turned off and driving current when the thin film transistor is operated. To increase the hydrogen content in the SOG film toward the O 2 plasma treatment after coating the SOG of a predetermined thickness for the purpose, and the silicon oxide film on top of the SOG to suppress the escape of hydrogen in the SOG thin film to the outside when the SOG heat treatment Or depositing an insulating film, performing heat treatment at a predetermined temperature for a predetermined time to infiltrate hydrogen in the SOG thin film into the channel polysilicon, and removing the silicon oxide film or insulating film and SOG deposited as a protective layer. It is about.

Description

스핀 온 글래스와 산소 플라즈마를 이용한 폴리실리콘 박막트랜지스터의 수소화 처리방법Hydrogenation of Polysilicon Thin Film Transistors Using Spin-on Glass and Oxygen Plasma

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1a도 내지 1c도는 본 발명의 제1실시예에 따른 박막트랜지스터(TFT)의 제조공정을 나타내는 단면도.1A to 1C are cross-sectional views illustrating a manufacturing process of a thin film transistor (TFT) according to a first embodiment of the present invention.

제2a도 내지 2c도는 본발명의 제2실시예에 따른 박막트랜지스터(TFT)의 제조공정을 나타내는 단면도.2a to 2c are cross-sectional views showing the manufacturing process of a thin film transistor (TFT) according to a second embodiment of the present invention.

Claims (6)

SOG와 O2플라즈마를 이용한 폴리실리콘 박막트랜지스터의 수소화 처리 방법에 있어서, 박막트랜지스터 오프시 누설전류를 감소시키고 박막트랜지스터 동작시 구동 전류를 증가시키는 것에 의한 폴리실리콘 박막트랜지스터의 특성을 향상시키기 위해 금속 공정까지 완료된 박막트랜지스터 소자위에, SOG를 제거할때, 금속의 보호막이 되는 실리콘 산화막(9) 또는 절연막을 증착하고 예정된 두께의 SOG 를 코팅한후 O2플라즈마(11) 처리를 행하여 SOG 박막(10)내의 수소함량을 증가시키는 단계와, SOG를 열처리 할때 SOG 박막(10) 내의 수소가 외부로 빠져 나가는 것을 억제하기 위하여 SOG상부에 실리콘 산화막(12) 또는 절연막을 증착시키는 단계와, 일정온도에서 일정시간 동안 열처리를 행하여 SOG박막(10)내의 수소를 채널 폴리실리콘에 침투시키는 단계와, 보호층으로 증착된 실리콘 산화막(12) 또는 절연막과 SOG 박막(10)을 제거하는 단계로 이루어지는 것을 특징으로 하는 SOG와 O2플라즈마를 이용한 폴리실리콘 박막트랜지스터의 수소화 처리 방법.In the hydrogenation method of a polysilicon thin film transistor using SOG and O 2 plasma, a metal process for improving the characteristics of the polysilicon thin film transistor by reducing the leakage current when the thin film transistor off and increasing the driving current during the thin film transistor operation When the SOG is removed, the silicon oxide film 9 or the insulating film, which is a protective film of metal, is deposited on the thin film transistor element completed up to and coated with SOG having a predetermined thickness, and then subjected to O 2 plasma 11 to perform the SOG thin film 10. Depositing a silicon oxide film 12 or insulating film on top of the SOG to suppress hydrogen from flowing out of the SOG thin film 10 when the SOG is heat-treated; Heat-treating for a time to infiltrate hydrogen in the SOG thin film 10 into the channel polysilicon, and A method of hydrogenating polysilicon thin film transistors using SOG and O 2 plasma, comprising removing the silicon oxide film 12 or the insulating film and the SOG thin film 10 deposited as a layer. 제1항에 있어서, 상기 O2플라지마(11) 대신 N2O 플라즈마 등 산소원자를 포함하는 플라즈마를 이용하여 SOG 박막(10) 내의 수소함량을 증가시키는 것을 특징으로 하는 SOG와 O2플라즈마를 이용한 플리실리콘 박막트랜지스터의 수소화 처리 방법.According to claim 1, SOG and O 2 plasma is characterized in that to increase the hydrogen content in the SOG thin film 10 using a plasma containing oxygen atoms, such as N 2 O plasma instead of the O 2 plasma (11). A hydrogenation method of a polysilicon thin film transistor used. 제1항에 있어서, 상기 보호층으로 증착된 실리콘 산화막(12) 또는 절연막과 SOG박막(10)을 제거하지 않는 것을 특징으로 하는 SOG와 O2플라즈마를 이용한 플리실리콘 박막트랜지스터의 수소화 처리 방법.The method of claim 1, wherein the hydrogenation method of the replicon silicon thin film transistor using the SOG as O 2 plasma, characterized in that it does not remove the silicon oxide film 12 or the insulating layer and the SOG layer 10 deposited as the protective layer. SOG와 O2플라즈마를 이용한 플리실리콘 박막트랜지스터의 수소화 처리 방법에 있어서, 박막트랜지스터오프시 누설전류를 감소시키고 박막트랜지스터 동작시 구동전류를 증가시키는 것에 의한 폴리실리콘 박막트랜지스터의 특성을 향상시키기 위해 소오스, 드레인이 형성된 채널 폴리실피콘 위에 예정된 두께의 SOG를 코팅하고 O2플라즈마 처리를 하여 SOG박막(10)내의 수소함량을 증가하는 단계와, SOG를 열처리할 때 SOG 박막(10)내의 수소가 외부로 빠져나가는 것을 억제하기 위해 SOG 상부에 실리콘 산화막(7) 또는 절연막을 증착시키는 단계와, 일정온도에서 일정시간 동안 열처리를 행하여 SOG박막(10)내의 수소를 채널 폴리실리콘에 침투시키는 단계와, 보호층으로 증착된 실리콘 절연막(7)과 SOG박막(10)을 제거하여 박막트랜지스터를 완성하는 단계로 이루어지는 것을 특징으로 하는 SOG와 O2플라즈마를 이용한 플리실리콘 박막트랜지스터의 수소화 처리 방법.A hydrogenation method of a polysilicon thin film transistor using SOG and O 2 plasma, the method of improving the characteristics of the polysilicon thin film transistor by reducing the leakage current when the thin film transistor off and increasing the driving current during the thin film transistor operation. In order to increase the hydrogen content in the SOG thin film 10 by coating SOG having a predetermined thickness on the channel polysilicon formed with a drain and performing O 2 plasma treatment, and hydrogen in the SOG thin film 10 to the outside when the SOG is heat-treated. Depositing a silicon oxide film 7 or an insulating film on top of the SOG to suppress the escape, and performing heat treatment at a predetermined temperature for a predetermined time to infiltrate hydrogen in the SOG thin film 10 into the channel polysilicon, and a protective layer This step is to complete the thin film transistor by removing the silicon insulating film 7 and the SOG thin film 10 deposited. Hydrogenation method of the replicon silicon thin film transistor using the SOG as O 2 plasma, characterized in that eojineun. 제4항에 있어서, 상기 O2플라즈마(11)대신 H2O 플라즈마 등 산소원자를 포함하는 플라즈마를 이용하여 SOG박막(10)내의 수소함량을 증가시키는 것을 특징으로 하는 SOG와 O2플라즈마를 이용한 플리실리콘 박막트랜지스터의 수소화 처리 방법.The method of claim 4 wherein the O 2 plasma 11 instead of the H 2 O plasma or the like using a plasma containing oxygen atoms using the SOG as O 2 plasma, characterized in that to increase the hydrogen content in the SOG layer 10 A hydrogenation method of a polysilicon thin film transistor. 제4항에 있어서, 상기 보호층으로 사용되는 실리콘 산화막(7) 또는 절연막과 SOG 박막(10)을 제거하지 않고 이후의 박막트랜지스터 제조공정을 이행하는 것을 특징으로 하는 SOG와 O2플라즈마를 이용한 플리실리콘 박막트랜지스터의 수소화 처리 방법.5. The flip-flop using SOG and O 2 plasma according to claim 4, wherein the thin film transistor manufacturing process is performed without removing the silicon oxide film 7 or insulating film and SOG thin film 10 used as the protective layer. Hydrogenation method of silicon thin film transistor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920017793A 1992-09-30 1992-09-30 Hydrogenating method of tft KR950009805B1 (en)

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