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KR920017215A - SOI manufacturing method using silicon growth - Google Patents

SOI manufacturing method using silicon growth Download PDF

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Publication number
KR920017215A
KR920017215A KR1019910002366A KR910002366A KR920017215A KR 920017215 A KR920017215 A KR 920017215A KR 1019910002366 A KR1019910002366 A KR 1019910002366A KR 910002366 A KR910002366 A KR 910002366A KR 920017215 A KR920017215 A KR 920017215A
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KR
South Korea
Prior art keywords
forming
silicon growth
oxide film
soi manufacturing
growing
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Application number
KR1019910002366A
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Korean (ko)
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KR0172814B1 (en
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이용훈
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문정환
금성일렉트론 주식회사
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Priority to KR1019910002366A priority Critical patent/KR0172814B1/en
Publication of KR920017215A publication Critical patent/KR920017215A/en
Application granted granted Critical
Publication of KR0172814B1 publication Critical patent/KR0172814B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)

Abstract

내용 없음No content

Description

실리콘 성장을 이용한 SOI의 제조방법SOI manufacturing method using silicon growth

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명의 실리콘 성장을 이용한 SOI의 구성도.3 is a schematic diagram of SOI utilizing silicon growth of the present invention.

Claims (1)

실리콘 기판 위에 선택적 산화에 의한 산화막을 형성시킨 후 상기 산화막위에 실리콘 에피층을 성장시키는 단계와, 상기 실리콘 에피층을 성장시킨 다음에 채널에 이온을 주입하고 포토레지스트를 페턴한 후 이온은 주입하여 소오스 및 드레인 영역을 형성하는 단계와, 상기 공정후에는 게이트 산화막과 폴리실리콘층을 형성하고 콘택을 형성하여 알루미늄 금속을 증착시키는 단계를 포함하여 이루어진 것을 특징으로 하는 실리콘 성장을 이용한 SOI의 제조방법.Forming an oxide film by selective oxidation on a silicon substrate, and growing a silicon epitaxial layer on the oxide film, growing the silicon epitaxial layer, implanting ions into a channel, patterning a photoresist, and then implanting ions And forming a drain region, and after the process, forming a gate oxide film and a polysilicon layer, and forming a contact to deposit an aluminum metal. ※참고사항:최초출원 내용에 의하여 공개하는 것임.※ Note: This is to be disclosed based on the first application.
KR1019910002366A 1991-02-12 1991-02-12 SOI manufacturing method using silicon growth Expired - Fee Related KR0172814B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910002366A KR0172814B1 (en) 1991-02-12 1991-02-12 SOI manufacturing method using silicon growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910002366A KR0172814B1 (en) 1991-02-12 1991-02-12 SOI manufacturing method using silicon growth

Publications (2)

Publication Number Publication Date
KR920017215A true KR920017215A (en) 1992-09-26
KR0172814B1 KR0172814B1 (en) 1999-03-30

Family

ID=19311050

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910002366A Expired - Fee Related KR0172814B1 (en) 1991-02-12 1991-02-12 SOI manufacturing method using silicon growth

Country Status (1)

Country Link
KR (1) KR0172814B1 (en)

Also Published As

Publication number Publication date
KR0172814B1 (en) 1999-03-30

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