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KR920008969A - 좁은 채널효과를 가지는 의사이상전하결합소자 - Google Patents

좁은 채널효과를 가지는 의사이상전하결합소자 Download PDF

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Publication number
KR920008969A
KR920008969A KR1019900016436A KR900016436A KR920008969A KR 920008969 A KR920008969 A KR 920008969A KR 1019900016436 A KR1019900016436 A KR 1019900016436A KR 900016436 A KR900016436 A KR 900016436A KR 920008969 A KR920008969 A KR 920008969A
Authority
KR
South Korea
Prior art keywords
coupled device
pseudo
width
charge coupled
channel effect
Prior art date
Application number
KR1019900016436A
Other languages
English (en)
Other versions
KR930011473B1 (ko
Inventor
남정현
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019900016436A priority Critical patent/KR930011473B1/ko
Priority to US07/653,723 priority patent/US5175602A/en
Priority to JP3048745A priority patent/JPH06216161A/ja
Publication of KR920008969A publication Critical patent/KR920008969A/ko
Application granted granted Critical
Publication of KR930011473B1 publication Critical patent/KR930011473B1/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H10D44/464—Two-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

내용 없음

Description

좁은 채널효과를 가지는 의사이상전하결합소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4(A)도는 본 발명의 의사이상전하결합소자의 평면도,
제4(B)도는 제4(A)도의 절단선 a-a'에 따른 단면도,
제4(C)도는 제4(A) 및 제4(B)도에 따른 본 발명의 채널전위분포도,
제5도는 본 발명에 따른 게이트전극의 폭과 채널전위와의 관계를 보여주는 그래프.

Claims (1)

  1. 전하가 전송되는 반도체영역상에 절연막으로 분리되어 형성된 다수개의 게이트전극을 구비하는 전하결합소자에 있어서, 상기 각각의 게이트전극이 소정크기의 제1폭과 최소한 상기 제1폭보다 전하전송방향으로 위치하고 상기 제1폭으로부터 크기가 증가하는 제2폭을 가지는 제1부분과, 상기 제1부분보다 최소한 전하전송방향으로 위치하고 상기 제2폭만을 가지며 상기 제1부분과는 접합된 제2부분으로 이루어짐을 특징으로 하는 전하결합소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900016436A 1990-10-16 1990-10-16 좁은 채널효과를 가지는 의사이상 전하 결합소자 KR930011473B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019900016436A KR930011473B1 (ko) 1990-10-16 1990-10-16 좁은 채널효과를 가지는 의사이상 전하 결합소자
US07/653,723 US5175602A (en) 1990-10-16 1991-02-11 Pseudo bi-phase charge coupled device having narrow channel effect
JP3048745A JPH06216161A (ja) 1990-10-16 1991-02-22 狭いチャネル効果をもつ擬似２相電荷結合素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900016436A KR930011473B1 (ko) 1990-10-16 1990-10-16 좁은 채널효과를 가지는 의사이상 전하 결합소자

Publications (2)

Publication Number Publication Date
KR920008969A true KR920008969A (ko) 1992-05-28
KR930011473B1 KR930011473B1 (ko) 1993-12-08

Family

ID=19304728

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900016436A KR930011473B1 (ko) 1990-10-16 1990-10-16 좁은 채널효과를 가지는 의사이상 전하 결합소자

Country Status (3)

Country Link
US (1) US5175602A (ko)
JP (1) JPH06216161A (ko)
KR (1) KR930011473B1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2658845B2 (ja) * 1993-12-20 1997-09-30 日本電気株式会社 固体撮像素子およびその製造方法
KR0136934B1 (ko) * 1994-02-23 1998-04-24 문정환 선형 고체영상소자
US5514886A (en) * 1995-01-18 1996-05-07 Eastman Kodak Company Image sensor with improved output region for superior charge transfer characteristics
US7881896B2 (en) 2002-02-14 2011-02-01 Faro Technologies, Inc. Portable coordinate measurement machine with integrated line laser scanner
JP4249433B2 (ja) * 2002-05-15 2009-04-02 Ｎｅｃエレクトロニクス株式会社 電荷転送素子及びその製造方法
JP2005174965A (ja) * 2003-12-05 2005-06-30 Nec Kyushu Ltd 電荷転送装置およびその製造方法
JP2011054596A (ja) * 2009-08-31 2011-03-17 Renesas Electronics Corp Ｃｃｄイメージセンサ
JP2013175610A (ja) * 2012-02-27 2013-09-05 Toshiba Corp 固体撮像素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212176A (ja) * 1982-06-02 1983-12-09 Nec Corp 電荷転送装置
US4688066A (en) * 1984-08-31 1987-08-18 Rca Corporation Opposite direction multiple-phase clocking in adjacent CCD shift registers
FR2597647B1 (fr) * 1986-04-18 1992-06-12 Thomson Csf Registre a decalage a transfert de charge muni d'un dispositif de lecture en tension sur diode flottante
JPS62296613A (ja) * 1986-06-17 1987-12-23 Matsushita Electronics Corp 電荷転送装置

Also Published As

Publication number Publication date
US5175602A (en) 1992-12-29
KR930011473B1 (ko) 1993-12-08
JPH06216161A (ja) 1994-08-05

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