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KR920007073A - Pimose LDD manufacturing method - Google Patents

Pimose LDD manufacturing method

Info

Publication number
KR920007073A
KR920007073A KR1019900014499A KR900014499A KR920007073A KR 920007073 A KR920007073 A KR 920007073A KR 1019900014499 A KR1019900014499 A KR 1019900014499A KR 900014499 A KR900014499 A KR 900014499A KR 920007073 A KR920007073 A KR 920007073A
Authority
KR
South Korea
Prior art keywords
pimose
ldd manufacturing
ldd
manufacturing
pimose ldd
Prior art date
Application number
KR1019900014499A
Other languages
Korean (ko)
Other versions
KR940001287B1 (en
Inventor
이혁재
Original Assignee
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사 filed Critical 금성일렉트론 주식회사
Priority to KR1019900014499A priority Critical patent/KR940001287B1/en
Publication of KR920007073A publication Critical patent/KR920007073A/en
Application granted granted Critical
Publication of KR940001287B1 publication Critical patent/KR940001287B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019900014499A 1990-09-13 1990-09-13 Method of making pmos ldd structure KR940001287B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900014499A KR940001287B1 (en) 1990-09-13 1990-09-13 Method of making pmos ldd structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900014499A KR940001287B1 (en) 1990-09-13 1990-09-13 Method of making pmos ldd structure

Publications (2)

Publication Number Publication Date
KR920007073A true KR920007073A (en) 1992-04-28
KR940001287B1 KR940001287B1 (en) 1994-02-18

Family

ID=19303576

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900014499A KR940001287B1 (en) 1990-09-13 1990-09-13 Method of making pmos ldd structure

Country Status (1)

Country Link
KR (1) KR940001287B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000041953A (en) * 1998-12-24 2000-07-15 김영환 Manufacturing method of semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6159815A (en) * 1996-09-27 2000-12-12 Siemens Aktiengesellschaft Method of producing a MOS transistor
KR100911986B1 (en) * 2002-12-23 2009-08-13 매그나칩 반도체 유한회사 Method for manufacturing a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000041953A (en) * 1998-12-24 2000-07-15 김영환 Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
KR940001287B1 (en) 1994-02-18

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20050120

Year of fee payment: 12

LAPS Lapse due to unpaid annual fee