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KR900701050A - 초전도체 배선의 구조 - Google Patents

초전도체 배선의 구조

Info

Publication number
KR900701050A
KR900701050A KR1019890701360A KR890701360A KR900701050A KR 900701050 A KR900701050 A KR 900701050A KR 1019890701360 A KR1019890701360 A KR 1019890701360A KR 890701360 A KR890701360 A KR 890701360A KR 900701050 A KR900701050 A KR 900701050A
Authority
KR
South Korea
Prior art keywords
buffer layer
superconductor
wiring
insulating layer
superconductor wiring
Prior art date
Application number
KR1019890701360A
Other languages
English (en)
Other versions
KR930004727B1 (ko
Inventor
다꾸오 다께시다
다다시 스기하라
Original Assignee
나가노 다께시
미쓰비시긴소꾸 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US1988/001309 external-priority patent/WO1988008357A1/en
Application filed by 나가노 다께시, 미쓰비시긴소꾸 가부시기가이샤 filed Critical 나가노 다께시
Publication of KR900701050A publication Critical patent/KR900701050A/ko
Application granted granted Critical
Publication of KR930004727B1 publication Critical patent/KR930004727B1/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/82—Current path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76891—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by using superconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49888—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing superconducting material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/93—Electric superconducting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/702—Josephson junction present
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/704—Wire, fiber, or cable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49014—Superconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611—Oxide-containing component
    • Y10T428/12618—Plural oxides

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)

Abstract

내용 없음

Description

초전도체 배선의 구조
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 2도는 본 발명에 관한 초전도체배선의 구조를 나타낸 단면도이다.

Claims (9)

  1. 절연층과, 그 절연층 위에 형성된 버퍼층과, 그 버퍼층 위에 형성되고, 스칸듐, 이트륨 및 란타노이드로 구성되는 군(群)으로부터 선택된 최소한 1개의 원소와 최소한 1개의 알칼리토류 금속과 구리 및 산소를 함유하는 초전도체 세라믹의 배선체를 포함하는 배선패턴을 보유하는 초전도체 배선의 구조로 되어 있고, 상기한 버퍼(buffer)층은, 고온하에서 상기한 초전도세라믹과 화학반응을 하지 않는 물질로 형성되어 있는 것을 특징으로 하는 초전도체 배선의 구조.
  2. 제 1항에 있어서, 상기한 고온은 약 800℃인 것을 특징으로 하는 초전도체배선의 구조.
  3. 제 1항에 있어서, 상기한 버퍼층은 도체인 것을 특징으로 하는 초전도체배선의 구조.
  4. 제 3항에 있어서, 상기한 버퍼층은 백금으로 형성되어 있는 것을 특징으로 하는 초전도체배선의 구조.
  5. 제 1항에 있어서, 상기한 절연층은 알루미나 및 이산화규소로 구성되는 군(群)으로부터 선택된 물질로 형성되어 있는 것을 특징으로 하는 초전도체배선의 구조.
  6. 제 5항에 있어서, 상기한 버퍼층은 분자식 MgO, SrTiO3, BaTiO3, BaZrO3, CaTiO3, SrZrO3, PbTiO3, SiAION으로 각각 표시되는 산화물 및 산화이트륨안정화지르코늄으로 구성되는 군으로부터 선택된 물질로 형성되어 있는 것을 특징으로 하는 초전도체 배선의 구조.
  7. 제 6항에 있어서, 상기한 버퍼층을 형성하기 위해서 사용되는 물질은 열팽창계수에 있어서 상기한 절연층을 형성하기 위해서 사용되는 물질보다 크고, 상기한 초전도 세라믹 보다 작은 것을 특징으로 하는 초전도체 배선의 구조.
  8. 제 6항에 있어서, 상기한 버퍼층을 형성하기 위해서 사용되는 물질은 페로브스카이트의 결정구조를 보유하는 것을 특징으로 하는 초전도체 배선의 구조.
  9. 절연층과, 그 절연층 위에 형성된 버퍼층과, 그 버퍼층 위에 형성되고, 스칸듐, 이트륨 및 란타노이드로 구성되는 군으로부터 선택된 복수의 원소와 복수의 알칼리토류금속과 구리 및 산소를 함유하는 초전도체 세라믹배선체를 포함하는 배선패턴을 보유하는 초전도체배선의 구조로 되어 있고, 상기한 버퍼층은 고온하에서 상기한 초전도세라믹과 화학반응하지 않는 물질로 형성되어 있는 것을 특징으로 하는 초전도체 배선의 구조.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890701360A 1987-12-25 1988-12-23 초전도체 배선의 구조 KR930004727B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-332981 1987-12-25
JP62332981A JPH01171247A (ja) 1987-12-25 1987-12-25 超伝導体配線の構造
PCT/US1988/001309 WO1988008357A1 (en) 1987-04-20 1988-04-19 Method of faceting gemstones

Publications (2)

Publication Number Publication Date
KR900701050A true KR900701050A (ko) 1990-08-17
KR930004727B1 KR930004727B1 (ko) 1993-06-03

Family

ID=18260974

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890701360A KR930004727B1 (ko) 1987-12-25 1988-12-23 초전도체 배선의 구조

Country Status (5)

Country Link
US (1) US5019554A (ko)
EP (1) EP0346494A4 (ko)
JP (1) JPH01171247A (ko)
KR (1) KR930004727B1 (ko)
WO (1) WO1989006440A1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02175683A (ja) * 1988-09-20 1990-07-06 Fujitsu Ltd 超伝導膜の製造方法およびこの製造方法に使用する基板ならびに超伝導膜
JPH06508481A (ja) * 1991-06-24 1994-09-22 フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 配列化されたパターン導線とこの導線を製造する方法
EP0523275B1 (en) * 1991-07-19 1996-02-28 International Business Machines Corporation Enhanced superconducting field-effect transistor with inverted MISFET structure and method for making the same
US5589714A (en) * 1992-06-08 1996-12-31 The Dow Chemical Company Epoxy polymer filled with aluminum nitride-containing polymer and semiconductor devices encapsulated with a thermosetting resin containing aluminum nitride particles
JPH0794633A (ja) * 1993-09-24 1995-04-07 Ngk Spark Plug Co Ltd 金属部材を接合したセラミック基板
US5601874A (en) * 1994-12-08 1997-02-11 The Dow Chemical Company Method of making moisture resistant aluminum nitride powder and powder produced thereby
US5872080A (en) * 1995-04-19 1999-02-16 The Regents Of The University Of California High temperature superconducting thick films
WO1998017846A1 (fr) * 1996-10-23 1998-04-30 Fujikura, Ltd. Procede pour preparer une couche mince polycristalline, procede pour preparer un supraconducteur de type oxyde, et dispositif associe
JP4741805B2 (ja) * 2004-03-04 2011-08-10 シャープ株式会社 超電導素子
US9073748B2 (en) * 2011-11-10 2015-07-07 Taiwan Semiconductor Manufacturing Company, Ltd. Microelectro mechanical system encapsulation scheme

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4826808A (en) * 1987-03-27 1989-05-02 Massachusetts Institute Of Technology Preparation of superconducting oxides and oxide-metal composites
JPS63283085A (ja) * 1987-05-15 1988-11-18 Hitachi Ltd 超電導デバイス
JPS63305574A (ja) * 1987-06-06 1988-12-13 Chichibu Cement Co Ltd 超電導体用基板
DE3855246T2 (de) * 1987-07-06 1996-12-05 Sumitomo Electric Industries Supraleitende dünne Schicht und Verfahren zu ihrer Herstellung
NL8701718A (nl) * 1987-07-21 1989-02-16 Philips Nv Werkwijze voor het aanbrengen van dunne lagen van oxidisch supergeleidend materiaal.
EP0300499B2 (en) * 1987-07-24 1998-08-19 Matsushita Electric Industrial Co., Ltd. Composite superconductor layer
CA1303252C (en) * 1987-08-13 1992-06-09 John A. Agostinelli Circuit element with barrier layer for protecting crystalline oxide conductive layer
JPS6461731A (en) * 1987-09-02 1989-03-08 Hitachi Ltd Liquid crystal display element
AU610260B2 (en) * 1987-10-16 1991-05-16 Furukawa Electric Co. Ltd., The Oxide superconductor shaped body and method of manufacturing the same
US4882312A (en) * 1988-05-09 1989-11-21 General Electric Company Evaporation of high Tc Y-Ba-Cu-O superconducting thin film on Si and SiO2 with a zirconia buffer layer

Also Published As

Publication number Publication date
WO1989006440A1 (en) 1989-07-13
EP0346494A4 (en) 1990-10-10
KR930004727B1 (ko) 1993-06-03
EP0346494A1 (en) 1989-12-20
JPH01171247A (ja) 1989-07-06
US5019554A (en) 1991-05-28

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