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KR870001109A - 규소분말의 용융응고법 - Google Patents

규소분말의 용융응고법 Download PDF

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Publication number
KR870001109A
KR870001109A KR1019860005943A KR860005943A KR870001109A KR 870001109 A KR870001109 A KR 870001109A KR 1019860005943 A KR1019860005943 A KR 1019860005943A KR 860005943 A KR860005943 A KR 860005943A KR 870001109 A KR870001109 A KR 870001109A
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KR
South Korea
Prior art keywords
silicon
temperature
per minute
rate
torr
Prior art date
Application number
KR1019860005943A
Other languages
English (en)
Other versions
KR890003675B1 (ko
Inventor
산주르조 엔젤
엠.산시어 캐네스
엠. 산시어 케네스
Original Assignee
에니켐 쏘시에떼 퍼 아찌오니
칼로 시오니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에니켐 쏘시에떼 퍼 아찌오니, 칼로 시오니 filed Critical 에니켐 쏘시에떼 퍼 아찌오니
Publication of KR870001109A publication Critical patent/KR870001109A/ko
Application granted granted Critical
Publication of KR890003675B1 publication Critical patent/KR890003675B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음.

Description

규소분말의 용융응고법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (9)

  1. 사불화규소와 나트륨의 반응으로부터 얻어진 규소를 용융응고시키는 방법에 있어서, 부분 진공압(partial vscuum), 200-300 torr의 불활성가스하에서 전술한 규소를 용융점까지 가열함을 포함하는 방법.
  2. 제1항에 있어서, 온도가 분당 5-50℃의 속도로 상승되는 방법.
  3. 제2항에 있어서, 온도가 분당 약 10℃의 속도로 상승되는 방법.
  4. 제1항에 있어서, 용융된 규소의 표면에 슬레그가 없어지게 되기에 충분한 시간동안 규소가 용융된 상태에서 유지시키는 방법.
  5. 제4항에 있어서, 온도가 분당 약 5-20℃의 속도로 상승시키는 방법.
  6. 제5항에 있어서, 온도를 분당 약 10℃의 속도로 상승시키는 방법.
  7. 제1항에 있어서, 반응로내의 불활성가스가 분당 10-100 torr의 속도로 비워져서 규소분말이 튀기지 않게 하는 방법.
  8. 제1항에 있어서, 규소가 1405-1409℃의 온도로 가열되고, 그 후 알곤이 20 torr의 분압(partial pressure)로 되는 방법.
  9. 4불화규소와 나트륨의 반응으로부터 얻어지는 규소분말을 용융응고시키는 방법에 있어서, 200-300 torr의 불활성가스 부분진공압(partial vacuum)하에서 분당 약 5-20℃의 상승온도로 규소분말을 녹을 때까지 가열하고 이후 슬레그가 완전히 휘발하여 없어질 때까지 온도를 용융점 이상으로 유지함을 포함하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860005943A 1985-07-24 1986-07-22 규소분말의 용융응고법 KR890003675B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/758,602 US4676968A (en) 1985-07-24 1985-07-24 Melt consolidation of silicon powder
US758,602 1985-07-24

Publications (2)

Publication Number Publication Date
KR870001109A true KR870001109A (ko) 1987-03-11
KR890003675B1 KR890003675B1 (ko) 1989-09-30

Family

ID=25052362

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860005943A KR890003675B1 (ko) 1985-07-24 1986-07-22 규소분말의 용융응고법

Country Status (5)

Country Link
US (1) US4676968A (ko)
EP (1) EP0209954A3 (ko)
JP (1) JPS6317215A (ko)
KR (1) KR890003675B1 (ko)
CA (1) CA1250131A (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4820587A (en) * 1986-08-25 1989-04-11 Ethyl Corporation Polysilicon produced by a fluid bed process
US5242671A (en) * 1988-10-11 1993-09-07 Ethyl Corporation Process for preparing polysilicon with diminished hydrogen content by using a fluidized bed with a two-step heating process
US5326547A (en) * 1988-10-11 1994-07-05 Albemarle Corporation Process for preparing polysilicon with diminished hydrogen content by using a two-step heating process
US5431127A (en) * 1994-10-14 1995-07-11 Texas Instruments Incorporated Process for producing semiconductor spheres
US5798137A (en) 1995-06-07 1998-08-25 Advanced Silicon Materials, Inc. Method for silicon deposition
DE10291940D2 (de) * 2001-05-03 2004-11-11 Wacker Chemie Gmbh Verfahren zur Energieerzeugung
US20030183161A1 (en) * 2002-03-29 2003-10-02 Japan Super Quartz Corporation Surface modified quartz glass crucible and its modification process
JP5374673B2 (ja) * 2006-04-04 2013-12-25 シリコール マテリアルズ インク 珪素精製方法
TW200914371A (en) * 2007-06-01 2009-04-01 Gt Solar Inc Processing of fine silicon powder to produce bulk silicon
AU2008282166A1 (en) * 2007-08-01 2009-02-05 Boston Silicon Materials Llc Process for the production of high purity elemental silicon
CA2700997A1 (en) * 2007-10-03 2009-04-09 6N Silicon Inc. Method for processing silicon powder to obtain silicon crystals
EP2650405A3 (en) * 2008-11-05 2014-02-26 MEMC Singapore Pte. Ltd. Methods for preparing a melt of silicon powder for silicon crystal growth
JP5052493B2 (ja) * 2008-12-29 2012-10-17 ジャパンスーパークォーツ株式会社 シリコン単結晶の製造方法
KR20110138248A (ko) * 2009-03-20 2011-12-26 보스톤 실리콘 머티리얼즈 엘엘씨 광전지 등급 규소 금속의 제조 방법
JP2012111672A (ja) * 2010-11-29 2012-06-14 Sharp Corp シリコン精製方法および精製シリコン
CN108059167A (zh) * 2017-12-26 2018-05-22 中国科学院过程工程研究所 切割硅粉渣制备高纯硅的方法及装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3177100A (en) * 1963-09-09 1965-04-06 Rca Corp Depositing epitaxial layer of silicon from a vapor mixture of sih4 and h3
GB1103329A (en) * 1964-09-15 1968-02-14 Gen Trustee Co Ltd Refining of silicon
US4298423A (en) * 1976-12-16 1981-11-03 Semix Incorporated Method of purifying silicon
DE2933164A1 (de) * 1979-08-16 1981-02-26 Consortium Elektrochem Ind Verfahren zum reinigen von rohsilicium
US4388286A (en) * 1982-01-27 1983-06-14 Atlantic Richfield Company Silicon purification
US4442082A (en) * 1982-12-27 1984-04-10 Sri International Process for obtaining silicon from fluosilicic acid
JPH10911A (ja) * 1996-04-17 1998-01-06 Hino Motors Ltd 後２軸車の駆動力付加装置

Also Published As

Publication number Publication date
EP0209954A2 (en) 1987-01-28
CA1250131A (en) 1989-02-21
US4676968A (en) 1987-06-30
EP0209954A3 (en) 1989-02-01
JPS6317215A (ja) 1988-01-25
KR890003675B1 (ko) 1989-09-30

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