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KR870005443A - Manufacturing Method of Semiconductor Device - Google Patents

Manufacturing Method of Semiconductor Device Download PDF

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Publication number
KR870005443A
KR870005443A KR1019850008910A KR850008910A KR870005443A KR 870005443 A KR870005443 A KR 870005443A KR 1019850008910 A KR1019850008910 A KR 1019850008910A KR 850008910 A KR850008910 A KR 850008910A KR 870005443 A KR870005443 A KR 870005443A
Authority
KR
South Korea
Prior art keywords
manufacturing
semiconductor device
oxide
phosphorus
silicon
Prior art date
Application number
KR1019850008910A
Other languages
Korean (ko)
Other versions
KR930000908B1 (en
Inventor
고석윤
Original Assignee
허신구
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 허신구, 주식회사 금성사 filed Critical 허신구
Priority to KR1019850008910A priority Critical patent/KR930000908B1/en
Publication of KR870005443A publication Critical patent/KR870005443A/en
Application granted granted Critical
Publication of KR930000908B1 publication Critical patent/KR930000908B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

내용 없음No content

Description

반도체 소자의 제조 방법Manufacturing Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도 가-다는 본 발명 방법에 의한 공정도2 is a flow chart according to the present invention method

Claims (1)

베이스영역(1)에 창(2)을 산화실리콘 피막(3)으로 형성한 다음 세척하고, 인의 산화물인 일산화염화인(PaCl3)을 증착한 다음 가열 확산하여 실리콘인 유리피막층(4)으로 외부로부터의 오염을 방지하도록 하여된 반도체 소자의 제조 방법.The window 2 is formed of a silicon oxide film 3 in the base region 1 and then washed, and a phosphorus oxide (PaCl 3 ), an oxide of phosphorus, is deposited, and then heat-diffused to the outside with a glass film layer 4 of silicon. A method for manufacturing a semiconductor device adapted to prevent contamination from the. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019850008910A 1985-11-28 1985-11-28 Manufacturing method of semiconductor device KR930000908B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019850008910A KR930000908B1 (en) 1985-11-28 1985-11-28 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019850008910A KR930000908B1 (en) 1985-11-28 1985-11-28 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
KR870005443A true KR870005443A (en) 1987-06-09
KR930000908B1 KR930000908B1 (en) 1993-02-11

Family

ID=19243873

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850008910A KR930000908B1 (en) 1985-11-28 1985-11-28 Manufacturing method of semiconductor device

Country Status (1)

Country Link
KR (1) KR930000908B1 (en)

Also Published As

Publication number Publication date
KR930000908B1 (en) 1993-02-11

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