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KR840008843A - 양성 포토레지스트 조성물 - Google Patents

양성 포토레지스트 조성물 Download PDF

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Publication number
KR840008843A
KR840008843A KR1019840002761A KR840002761A KR840008843A KR 840008843 A KR840008843 A KR 840008843A KR 1019840002761 A KR1019840002761 A KR 1019840002761A KR 840002761 A KR840002761 A KR 840002761A KR 840008843 A KR840008843 A KR 840008843A
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KR
South Korea
Prior art keywords
dihydro
diazo
benzophenone
oxo
photoresist composition
Prior art date
Application number
KR1019840002761A
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English (en)
Other versions
KR860000473B1 (ko
Inventor
마빈 루이스(외4) 제임스
Original Assignee
로이 에이취. 랫신길
알라이드 코오포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR840008843A publication Critical patent/KR840008843A/ko
Application granted granted Critical
Publication of KR860000473B1 publication Critical patent/KR860000473B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/016—Diazonium salts or compounds

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Paints Or Removers (AREA)
  • Hydrogenated Pyridines (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

내용 없음

Description

양성 포토레지스트 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (8)

  1. 디아조 케톤 감과성 화합물, 알카리용액수지, 시클로펜타논 또는 시클로펜타논과 시클로 헥사논의 혼합물로부터 선택되는 환상 케톤 용매, 및 지방족 알콜(C5ㅡC12)용매를 포함하여 용액으로 구성된 양성포토레지스트 조성물, 단, 용매시스템에서 환상케톤은 총용매의 최소한 20％이상을 구성하며 알콜은 최소한 10％이상을 구성함.
  2. 환상케톤이 시클로펜타논인, 청구범위 1항의 포토레지스트 조성물
  3. 지방족 알콜용매가 nㅡ옥타놀, nㅡ헥사놀, 2ㅡ옥타놀, 1ㅡ헵타놀, 2ㅡ메틸ㅡ1ㅡ펜타놀 및 그들의 혼합물로 부터 선택된것인, 청구범위 1항의 포토레지스트 조성물.
  4. 감광성 화합물이 2,3,4ㅡ비스(6ㅡ디아조ㅡ5,6ㅡ디하이드로ㅡ5ㅡ옥소ㅡ1ㅡ나프탈렌술포닐옥시)벤조페논, 2ㅡ하이드록시ㅡ3,4ㅡ비스(6ㅡ디아조ㅡ5,6ㅡ디하이드로ㅡ5ㅡ1ㅡ옥소나프탈렌 술포닐 옥시)벤조페논, 2,4ㅡ비스(6ㅡ디아조ㅡ5,6ㅡ디하이드로ㅡ5ㅡ옥소ㅡ1ㅡ나프탈렌술포닐옥시)벤조페놀, 2,3ㅡ디하이드록시ㅡ4ㅡ(6ㅡ디아조ㅡ5,6ㅡ디하이드로ㅡ5ㅡ옥소ㅡ1ㅡ나프탈렌술포닐옥시)벤조페논, 2ㅡ하이드록시ㅡ4ㅡ(6ㅡ디아조ㅡ5,6ㅡ디하이드로ㅡ5ㅡ옥소ㅡ1ㅡ나프탈렌술포닐옥시)벤조페논, 2,3ㅡ디브로모ㅡ1ㅡ(6ㅡ디아조ㅡ5,6ㅡ디하이드로ㅡ5ㅡ옥소ㅡ1ㅡ나프탈렌술포닐옥시)프로판, 2,4ㅡ비스(6ㅡ디아조ㅡ5,6ㅡ디하이드로ㅡ5ㅡ옥소ㅡ1ㅡ나프탈렌술포닐옥시)벤조페논 및 그 화합물로 부터 선택되는 것인, 청구범위 1항의 포토레지스트 조성물.
  5. 감광성 화합물이 2ㅡ하이드록시ㅡ4ㅡ(6ㅡ디아조ㅡ5,6ㅡ디하이드로ㅡ5ㅡ옥소ㅡ1ㅡ나프탈렌술포닐옥시)벤조페노논과2,4ㅡ비스(6ㅡ디아조ㅡ5,6ㅡ디하이드로ㅡ5ㅡ옥소ㅡ1ㅡ나프탈렌술포닐옥시)벤조페논의 혼합물인 청구범위 1항의 포토레지스트 조성물.
  6. 감광성 화합물이 2,3,4ㅡ트리스(6ㅡ디아조ㅡ5,6ㅡ디하이드로ㅡ5ㅡ옥소ㅡ1ㅡ나프탈렌술포닐옥시)벤조페논, 2ㅡ하이드록시ㅡ3,4ㅡ비스(6ㅡ디아조ㅡ5,6ㅡ디하이드로ㅡ5ㅡ옥소ㅡ1ㅡ나프탈렌술포닐옥시)벤조페논, 2,3ㅡ디하이드록시ㅡ4ㅡ(6ㅡ디아조ㅡ5,6ㅡ디하이드로ㅡ5ㅡ옥소ㅡ1ㅡ나프탈렌술포닐옥시)벤조페논의 혼합물인 청구범위 1항의 포토레지스트 조성물.
  7. 지방족 알콜이 2ㅡ옥타놀, 1ㅡ헵타놀, 2ㅡ메틸ㅡ1ㅡ펜타놀, nㅡ헥사놀, nㅡ옥타놀 및 그 혼합물로 부터 선택된것인, 청구범위 2항의 포토레지스트 조성물.
  8. 환상케톤이 시클로펜타논이고 지방족 알콜은 nㅡ헥사놀, nㅡ옥타놀, 2ㅡ옥타놀, 1ㅡ헵타놀, 2ㅡ메틸ㅡ1ㅡ펜타놀 및 그 혼합물로 부터 선택된 것인, 청구범위 4항의 포토레지스트 조성물.
    ※ 참고사항 : 최초출원내용에 의하여 공개하는 것임.
KR1019840002761A 1983-05-23 1984-05-21 양성 포토레지스트 조성물 KR860000473B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US497390 1983-05-23
US497,390 1983-05-23
US06/497,390 US4526856A (en) 1983-05-23 1983-05-23 Low striation positive diazoketone resist composition with cyclic ketone(s) and aliphatic alcohol as solvents

Publications (2)

Publication Number Publication Date
KR840008843A true KR840008843A (ko) 1984-12-19
KR860000473B1 KR860000473B1 (ko) 1986-04-28

Family

ID=23976664

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840002761A KR860000473B1 (ko) 1983-05-23 1984-05-21 양성 포토레지스트 조성물

Country Status (7)

Country Link
US (1) US4526856A (ko)
EP (1) EP0126266B1 (ko)
JP (1) JPS59231534A (ko)
KR (1) KR860000473B1 (ko)
AT (1) ATE51307T1 (ko)
CA (1) CA1213769A (ko)
DE (1) DE3481733D1 (ko)

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JPS6024545A (ja) * 1983-07-21 1985-02-07 Japan Synthetic Rubber Co Ltd ポジ型感光性樹脂組成物
JPH0766183B2 (ja) * 1985-05-15 1995-07-19 三菱化学株式会社 ポジ型フオトレジスト組成物
JPS62123444A (ja) * 1985-08-07 1987-06-04 Japan Synthetic Rubber Co Ltd ポジ型感放射線性樹脂組成物
JPH0721626B2 (ja) * 1985-08-10 1995-03-08 日本合成ゴム株式会社 半導体微細加工用レジスト組成物
US5217840A (en) * 1985-08-12 1993-06-08 Hoechst Celanese Corporation Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
US5256522A (en) * 1985-08-12 1993-10-26 Hoechst Celanese Corporation Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
CA1290087C (en) * 1985-10-17 1991-10-01 Dale M. Crockatt Film-forming compositions comprising polyglutarimide
JPH0654385B2 (ja) * 1986-01-27 1994-07-20 日本合成ゴム株式会社 ポジ型感放射線性樹脂組成物
JPS62194249A (ja) * 1986-02-20 1987-08-26 Fuji Photo Film Co Ltd ポジ型感光性組成物
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JP2636348B2 (ja) * 1988-07-20 1997-07-30 住友化学工業株式会社 ポジ型レジスト用組成物
JP3064595B2 (ja) 1991-04-26 2000-07-12 住友化学工業株式会社 ポジ型レジスト組成物
JP3057010B2 (ja) * 1996-08-29 2000-06-26 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターンの形成方法
US20040106062A1 (en) * 2001-10-31 2004-06-03 Petrov Viacheslav Alexandrovich Photoacid generators in photoresist compositions for microlithography
CN1802603A (zh) 2003-07-17 2006-07-12 霍尼韦尔国际公司 用于高级微电子应用的平面化薄膜及其生产装置和方法
US20070207406A1 (en) * 2004-04-29 2007-09-06 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
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US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
KR101647158B1 (ko) * 2008-01-29 2016-08-09 브레우어 사이언스 인코포레이션 다중 다크 필드 노출에 의한, 하드마스크 패턴화를 위한 온-트랙 공정
US20100151118A1 (en) * 2008-12-17 2010-06-17 Eastman Chemical Company Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings
US9640396B2 (en) * 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
JP6458236B2 (ja) * 2014-09-26 2019-01-30 ナトコ株式会社 アルカリ可溶性樹脂、感光性樹脂組成物及びその用途
US12087580B2 (en) * 2021-08-30 2024-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor devices

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Also Published As

Publication number Publication date
KR860000473B1 (ko) 1986-04-28
US4526856A (en) 1985-07-02
ATE51307T1 (de) 1990-04-15
EP0126266A3 (en) 1986-01-22
CA1213769A (en) 1986-11-12
EP0126266A2 (en) 1984-11-28
JPS59231534A (ja) 1984-12-26
JPH0433025B2 (ko) 1992-06-01
EP0126266B1 (en) 1990-03-21
DE3481733D1 (de) 1990-04-26

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