KR830005285A - 폴리(디실릴)실라잔 폴리머의 제조방법 - Google Patents
폴리(디실릴)실라잔 폴리머의 제조방법 Download PDFInfo
- Publication number
- KR830005285A KR830005285A KR1019810001355A KR810001355A KR830005285A KR 830005285 A KR830005285 A KR 830005285A KR 1019810001355 A KR1019810001355 A KR 1019810001355A KR 810001355 A KR810001355 A KR 810001355A KR 830005285 A KR830005285 A KR 830005285A
- Authority
- KR
- South Korea
- Prior art keywords
- general formula
- chlorine
- phenyl
- vinyl
- silazane polymer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims 3
- 229920000642 polymer Polymers 0.000 title claims 3
- 239000000460 chlorine Substances 0.000 claims 9
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 6
- 229910052801 chlorine Inorganic materials 0.000 claims 6
- 125000000217 alkyl group Chemical group 0.000 claims 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims 4
- 229920002554 vinyl polymer Polymers 0.000 claims 4
- 125000004432 carbon atom Chemical group C* 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical class [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- 239000006227 byproduct Substances 0.000 claims 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims 2
- 238000004821 distillation Methods 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 239000000047 product Substances 0.000 claims 1
- 239000003039 volatile agent Substances 0.000 claims 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/977—Preparation from organic compounds containing silicon
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/571—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained from Si-containing polymer precursors or organosilicon monomers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/62—Nitrogen atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/16—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/02—Amorphous compounds
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/60—Compounds characterised by their crystallite size
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S521/00—Synthetic resins or natural rubbers -- part of the class 520 series
- Y10S521/919—Sintered product
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
- Silicon Polymers (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (2)
- 일반식(ClaRbSi)2의 염소함유 디실란 또는 염소함유 디실란의 혼합물을 일반식(R'3Si)2NH의 디실라잔과 25 내지 300℃의 온도에서 불활성이 거의 무수 대기중에 접촉, 반응시키는 반면 부생되는 휘발생성물을 증류시킴을 특징으로 하여 R'3SiNH-함유 실라잔 플리머를 제조하는 방법.상기 일반식에서R은 비닐, 탄소수 1 내지 3의 알킬그룹 또는 페닐이고,R1는 비닐, 수소, 탄소수 1 내지 3의 알킬 또는 페닐이고,a는 0.5 내지 3이고b는 0 내지 2.5이고 a+b의 합은 3이다.
- 일반식(R3Si)2NH의 디실라잔을 일반식(i) (ClaRbSi)2의 염소함유 디실란 및 일반식 R'nSiCl4-n의 염소함유 모노실란과의 혼합물.(ⅱ) 일반식(ClaRbSi)2의 염소함유 디실란 및 일반식 R'nSiCl4-n의 염소함유 모노실란과의 혼합물 또는 300℃에서 불활성의 거의 무수 대기중에 접촉, 반응시키는 반면 부생되는 휘발성 생성물을 증류시킴을 특징으로 하여 R'3SiNH 함유 실라잔 폴리머를 제조하는 방법.상기 일반식에서R은 비닐, 탄소수 1 내지 3의 알킬 그룹 또는 페닐이고,R'는 비닐, 수소, 탄소수 1 내지 3의 알킬 또는 페닐이고a는 0.5 내지 3이고b는 0 내지 2.5이고 a+b의 합은 3이다.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/225,274 US4340619A (en) | 1981-01-15 | 1981-01-15 | Process for the preparation of poly(disilyl)silazane polymers and the polymers therefrom |
US225274 | 1981-01-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR830005285A true KR830005285A (ko) | 1983-08-13 |
KR850000130B1 KR850000130B1 (ko) | 1985-02-27 |
Family
ID=22844258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019810001355A KR850000130B1 (ko) | 1981-01-15 | 1981-04-21 | 폴리(디실릴)실라잔 폴리머의 제조방법 |
Country Status (21)
Country | Link |
---|---|
US (1) | US4340619A (ko) |
JP (1) | JPS57117532A (ko) |
KR (1) | KR850000130B1 (ko) |
AR (1) | AR226940A1 (ko) |
AT (1) | AT381321B (ko) |
AU (1) | AU538465B2 (ko) |
BE (1) | BE889029A (ko) |
BR (1) | BR8200189A (ko) |
CA (1) | CA1161986A (ko) |
CH (1) | CH650266A5 (ko) |
DE (1) | DE3119197C2 (ko) |
DK (1) | DK286781A (ko) |
FI (1) | FI68256C (ko) |
FR (1) | FR2497812B1 (ko) |
GB (1) | GB2091279B (ko) |
IT (1) | IT1167751B (ko) |
MX (1) | MX160138A (ko) |
NL (1) | NL8101944A (ko) |
NO (1) | NO155935C (ko) |
SE (1) | SE451457B (ko) |
ZA (1) | ZA818502B (ko) |
Families Citing this family (78)
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US4789507A (en) * | 1985-10-28 | 1988-12-06 | Hoechst Celanese Corporation | Production of preceramic and ceramic fibers from friable, thermally sensitive organosilicon preceramic polymers |
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KR20090125268A (ko) * | 2007-03-27 | 2009-12-04 | 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 | 이차 전지용 정극 재료의 제조 방법 |
US7842774B2 (en) * | 2007-07-24 | 2010-11-30 | United Technologies Corporation | Preceramic silazane polymer for ceramic materials |
TW200944489A (en) * | 2008-01-30 | 2009-11-01 | Dow Corning Toray Co Ltd | Silicon-containing particle, process for producing the same, organic-polymer composition, ceramic, and process for producing the same |
EP2271702A2 (en) * | 2008-04-30 | 2011-01-12 | Dow Corning Toray Co., Ltd. | Silicon-containing particles, method for manufacturing thereof, oil composition, ceramic material, and method for manufacturing thereof |
KR20120051719A (ko) | 2009-07-31 | 2012-05-22 | 다우 코닝 도레이 캄파니 리미티드 | 전극활물질,전극 및 축전 디바이스 |
CN102473908A (zh) | 2009-07-31 | 2012-05-23 | 道康宁东丽株式会社 | 电极活性材料、电极和蓄电装置 |
US9045347B2 (en) * | 2010-02-26 | 2015-06-02 | General Electric Company | Stiochiometric silicon carbide fibers from thermo-chemically cured polysilazanes |
US8987402B2 (en) | 2010-02-26 | 2015-03-24 | General Electric Company | Stoichiometric silicon carbide fibers from thermo-chemically cured polysilazanes |
JP2012178224A (ja) | 2011-01-31 | 2012-09-13 | Dow Corning Toray Co Ltd | 表面炭素被覆ケイ素含有炭素系複合材料の製造方法 |
JP2013157221A (ja) | 2012-01-30 | 2013-08-15 | Dow Corning Toray Co Ltd | ケイ素含有炭素系複合材料 |
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IL22431A (en) * | 1964-11-12 | 1968-11-27 | Fuchs J | Process for the production of disilazanes and the products obtained by this method |
US3553242A (en) * | 1968-04-26 | 1971-01-05 | Monsanto Co | Process for preparing 1,3-disilyl-1,3,2,4-diazadisiletidines |
US3738906A (en) * | 1970-08-21 | 1973-06-12 | Atlantic Res Corp | Pyrolytic graphite silicon carbide microcomposites |
US3755397A (en) * | 1971-06-01 | 1973-08-28 | Dow Corning | Silylating agent |
GB1370478A (en) * | 1971-11-19 | 1974-10-16 | Rolls Royce | Injection of a ceramic into a mould |
DE2218960A1 (de) * | 1972-04-19 | 1973-11-08 | Bayer Ag | Formkoerper aus mogenen mischungen von siliciumcarbid und siliciumnitrid und verfahren zu ihrer erstellung |
DE2243527A1 (de) * | 1972-09-05 | 1974-04-18 | Bayer Ag | Formkoerper aus homogenen mischungen von siliciumcarbid und siliciumnitrid und verfahren zu ihrer herstellung |
DE2364989C3 (de) * | 1973-12-28 | 1979-10-18 | Consortium Fuer Elektrochemische Industrie Gmbh, 8000 Muenchen | Verfahren zur Herstellung von Schichten aus Siliciumcarbid auf einem Siliciumsubstrat |
US4067955A (en) * | 1975-10-03 | 1978-01-10 | Ford Motor Company | Method of forming a silicon carbide article |
JPS52112700A (en) * | 1976-02-28 | 1977-09-21 | Tohoku Daigaku Kinzoku Zairyo | Amorphous organopolysilicone composite for preparing silicone carbide |
GB1590011A (en) * | 1976-08-17 | 1981-05-28 | Kyoto Ceramic | Method of producing dense sintered silicon carbide body from polycarbosilane |
GB2039787B (en) * | 1978-11-13 | 1982-12-08 | Res Inst For Special Inorganic | Producing corrosion resistant articles |
-
1981
- 1981-01-15 US US06/225,274 patent/US4340619A/en not_active Expired - Fee Related
- 1981-04-02 CA CA000374461A patent/CA1161986A/en not_active Expired
- 1981-04-03 GB GB8110493A patent/GB2091279B/en not_active Expired
- 1981-04-08 AU AU69178/81A patent/AU538465B2/en not_active Ceased
- 1981-04-21 NL NL8101944A patent/NL8101944A/nl not_active Application Discontinuation
- 1981-04-21 KR KR1019810001355A patent/KR850000130B1/ko active
- 1981-04-30 IT IT21468/81A patent/IT1167751B/it active
- 1981-05-06 JP JP56068089A patent/JPS57117532A/ja active Granted
- 1981-05-14 DE DE3119197A patent/DE3119197C2/de not_active Expired
- 1981-05-25 FR FR8110326A patent/FR2497812B1/fr not_active Expired
- 1981-06-01 BE BE0/204953A patent/BE889029A/fr not_active IP Right Cessation
- 1981-06-24 SE SE8103956A patent/SE451457B/sv not_active IP Right Cessation
- 1981-06-29 DK DK286781A patent/DK286781A/da not_active Application Discontinuation
- 1981-06-30 FI FI812043A patent/FI68256C/fi not_active IP Right Cessation
- 1981-07-02 NO NO812260A patent/NO155935C/no unknown
- 1981-12-08 ZA ZA818502A patent/ZA818502B/xx unknown
- 1981-12-11 AR AR287779A patent/AR226940A1/es active
-
1982
- 1982-01-08 AT AT0003882A patent/AT381321B/de not_active IP Right Cessation
- 1982-01-11 CH CH140/82A patent/CH650266A5/de not_active IP Right Cessation
- 1982-01-14 MX MX190974A patent/MX160138A/es unknown
- 1982-01-14 BR BR8200189A patent/BR8200189A/pt unknown
Also Published As
Publication number | Publication date |
---|---|
IT1167751B (it) | 1987-05-13 |
MX160138A (es) | 1989-12-06 |
BR8200189A (pt) | 1982-11-09 |
CA1161986A (en) | 1984-02-07 |
NL8101944A (nl) | 1982-08-02 |
FI68256C (fi) | 1985-08-12 |
NO812260L (no) | 1982-07-16 |
DK286781A (da) | 1982-07-16 |
GB2091279A (en) | 1982-07-28 |
FI68256B (fi) | 1985-04-30 |
AU6917881A (en) | 1982-07-22 |
NO155935C (no) | 1987-06-24 |
DE3119197C2 (de) | 1985-07-18 |
NO155935B (no) | 1987-03-16 |
DE3119197A1 (de) | 1982-07-22 |
KR850000130B1 (ko) | 1985-02-27 |
AU538465B2 (en) | 1984-08-16 |
JPS57117532A (en) | 1982-07-22 |
SE451457B (sv) | 1987-10-12 |
IT8121468A0 (it) | 1981-04-30 |
AR226940A1 (es) | 1982-08-31 |
BE889029A (fr) | 1981-12-01 |
GB2091279B (en) | 1984-11-21 |
FR2497812B1 (fr) | 1986-04-11 |
ATA3882A (de) | 1986-02-15 |
SE8103956L (sv) | 1982-07-16 |
CH650266A5 (de) | 1985-07-15 |
JPS6138933B2 (ko) | 1986-09-01 |
FI812043L (fi) | 1982-07-16 |
AT381321B (de) | 1986-09-25 |
US4340619A (en) | 1982-07-20 |
ZA818502B (en) | 1982-12-29 |
FR2497812A1 (fr) | 1982-07-16 |
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