KR20240068096A - Apparatus for treating substrate - Google Patents

Abstract

The present invention provides a substrate processing apparatus. A substrate processing apparatus according to an embodiment of the present invention includes a process chamber in which a plurality of process processing units that respectively process substrates are disposed, and an opening through which substrates are carried in and out of one side wall is provided; and disposed on the inner wall of the process chamber corresponding to the opening to be able to open and close the opening, connected to a gas supply unit that supplies gas, and surrounding the opening through the gas supply unit when the opening is opened. It includes a shutter in which a gas flow path for spraying gas into the chamber is disposed. According to this configuration, it is possible to maintain the differential pressure of the gas inside and outside the process chamber.

Description

Substrate processing device {APPARATUS FOR TREATING SUBSTRATE}

The present invention relates to a substrate processing apparatus.

Generally, in the semiconductor manufacturing process, a substrate is manufactured through a deposition process, an etching process, a photo process, and a cleaning process. This semiconductor manufacturing process processes the substrate within each process chamber. For example, in photo processing, a plurality of process processing units are placed within the process chamber to improve substrate processing efficiency and productivity. Using this process processing unit, a photo processing process is performed by supplying various types of processing liquids to each substrate. The side wall of this process chamber is equipped with a shutter to open and close the opening for carrying in and out of the substrate. During the process of processing the substrate in one process processing unit within the process chamber, the substrate is transported in or out of the other process processing unit. When the shutter placed on the side wall of the process chamber opens and closes the opening of the side wall, the internal space of the process chamber is exposed to the outside, so the differential pressure between the process chamber and the outside causes a flow of air, resulting in a differential pressure hunting phenomenon. It can also be a factor that hinders the maintenance of temperature and humidity in the internal space of the process chamber.

Republic of Korea Public Patent No. 10-2022-0097680 (2022.07.08)

The purpose of the present invention is to provide a substrate processing apparatus to solve at least one of the above problems.

In order to achieve the above object, according to an embodiment of the present invention, there is provided a process chamber in which a plurality of process processing units that respectively process substrates are disposed, and an opening through which substrates are carried in and out is provided on one side wall; and disposed on the inner wall of the process chamber corresponding to the opening to be able to open and close the opening, connected to a gas supply unit that supplies gas, and surrounding the opening through the gas supply unit when the opening is opened. Provided is a substrate processing apparatus including a shutter in which a gas flow path for spraying gas into the chamber is disposed.

Here, the gas flow path may be configured to form a ring-shaped gas curtain having a size larger than the opening size of the opening.

As an example, the gas flow path may be provided with an outlet formed in a ring shape on a side of the shutter corresponding to the circumference of the opening, and may be configured to spray gas through a gap between the opening and the shutter.

As another example, the gas flow path may be provided with an outlet formed in a ring shape on a side of the shutter corresponding to the circumference of the opening, and may be configured to spray gas through a gap between the opening and the shutter.

Furthermore, a substrate processing apparatus according to an embodiment of the present invention includes a control unit electrically connected to the shutter; and a sensor unit that measures the differential pressure of gas inside and outside the process chamber. The control unit may control the shutter to inject the gas into the process chamber at an injection amount that compensates for the differential pressure according to the differential pressure measured from the sensor unit.

For example, the gas supply unit may be connected to a process gas supply source that supplies process gas with controlled temperature and humidity supplied to the internal space of the process chamber.

As another example, the gas supply unit may be connected to an N ₂ purge gas source that supplies N ₂ purge gas.

Meanwhile, the substrate processing apparatus according to an embodiment of the present invention may be disposed in the inner space of the process chamber and include a processing unit that processes the substrate. Here, the process processing unit is connected to a support portion supporting the substrate accommodated therein and a cleaning fluid supply portion located below the support portion and supplying a cleaning fluid, and is connected to a ring-shaped cleaning unit that sprays the cleaning fluid toward the lower portion of the substrate. It may include a nozzle unit.

Furthermore, the cleaning fluid supply unit may be connected to a process gas supply source that supplies process gas with controlled temperature and humidity supplied to the inner space of the process chamber, an N ₂ purge gas supply source that supplies N ₂ purge gas, or a cleaning fluid supply source that supplies cleaning fluid. You can.

As a result, according to the configuration of the substrate processing apparatus of the present invention, the shutter is provided with a gas flow path connected to the gas supply source, so that in the process of the shutter opening the opening of the process chamber, gas is supplied from the gas supply unit to the gas flow path of the shutter. By spraying gas around the opening into the process chamber, a shielding effect from the outside of the process chamber can be realized, and furthermore, the emission of gas in the process chamber to the outside through the opening can be minimized. In addition, by discharging gas from the gas supply unit into the process chamber through the gas flow path of the shutter, the differential pressure of the gas inside and outside the process chamber due to the discharge of gas to the outside through the opening can be compensated, preventing differential pressure hunting of the gas in the process chamber. It can be minimized.

Figure 1 is a view from the top of a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a view of the substrate processing apparatus of FIG. 1 viewed from the AA direction.
FIG. 3 is a view of the substrate processing apparatus of FIG. 1 viewed from the BB direction.
Figure 4 is an exemplary diagram showing a substrate processing apparatus according to an embodiment of the present invention.
FIG. 5 is an exemplary diagram showing a partial structure in which a shutter is disposed on one side wall of the process chamber of FIG. 4 where an opening is disposed.
Figure 6 is an exemplary diagram showing the configuration of a gas flow path of a shutter of a substrate processing apparatus according to an embodiment of the present invention.
Figure 7 is an exemplary diagram showing the configuration of a gas flow path of a shutter of a substrate processing apparatus according to another embodiment of the present invention.
Figure 8 is an exemplary diagram showing the configuration of the cleaning nozzle portion of the substrate processing apparatus of the present invention.
Figure 9 is an exemplary diagram showing a substrate processing apparatus according to another embodiment of the present invention.

Hereinafter, with reference to the attached drawings, preferred embodiments will be described in detail so that those skilled in the art can easily practice the present invention. However, when describing preferred embodiments of the present invention in detail, if it is determined that detailed descriptions of related known functions or configurations may unnecessarily obscure the gist of the present invention, the detailed descriptions will be omitted. In addition, the same symbols are used throughout the drawings for parts that perform similar functions and actions. In addition, in this specification, terms such as 'upper', 'top', 'upper surface', 'lower', 'lower', 'lower surface', 'side', etc. are based on the drawings and are actually elements or components. It may vary depending on the direction in which it is placed.

Additionally, throughout the specification, when a part is said to be 'connected' to another part, this does not only mean 'directly connected', but also 'indirectly connected' with another element in between. Includes. In addition, 'including' a certain component does not mean excluding other components, but may further include other components, unless specifically stated to the contrary.

Hereinafter, with reference to the attached drawings, preferred embodiments will be described in detail so that those skilled in the art can easily practice the present invention. However, when describing preferred embodiments of the present invention in detail, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. In addition, the same symbols are used throughout the drawings for parts that perform similar functions and actions. In addition, in this specification, terms such as 'top', 'top', 'upper surface', 'bottom', 'bottom', 'bottom', 'side', etc. are based on the drawings, and are actually elements or components. It may vary depending on the direction in which it is placed.

Additionally, throughout the specification, when a part is said to be 'connected' to another part, this does not only mean 'directly connected', but also 'indirectly connected' with another element in between. Includes. In addition, 'including' a certain component does not mean excluding other components, but may further include other components, unless specifically stated to the contrary.

FIG. 1 is a view of the substrate processing apparatus seen from the top, FIG. 2 is a view of the substrate processing apparatus of FIG. 1 viewed from the A-A direction, and FIG. 3 is a view of the substrate processing apparatus of FIG. 1 viewed from the B-B direction.

1 to 3, the substrate processing apparatus 1 includes a load port 100, an index module 200, a buffer module 300, a coating and development module 400, and a purge module 700. do. The load port 100, index module 200, buffer module 300, application and development module 400, and interface module 600 are sequentially arranged in a line in one direction. The purge module 700 may be provided within the interface module 600. In contrast, the purge module 700 may be provided at various locations, such as at a location where the exposure device behind the interface module 600 is connected or at the side of the interface module 600.

Hereinafter, the direction in which the load port 100, index module 200, buffer module 300, application and development module 400, and interface module 600 are arranged is referred to as the first direction (Y), and from the top When looking, the direction perpendicular to the first direction (Y) is called the second direction (X), and the direction perpendicular to the first direction (Y) and the second direction (X) is called the third direction (Z). .

The substrate W is moved while stored in the cassette 20. The cassette 20 has a structure that can be sealed from the outside. For example, a Front Open Unified Pod (FOUP) having a door at the front may be used as the cassette 20.

Hereinafter, the load port 100, index module 200, buffer module 300, application and development module 400, interface module 600, and purge module 700 will be described in detail.

The load port 100 has a table 120 on which the cassette 20 containing the substrate W is placed. A plurality of platforms 120 are provided, and the platforms 120 are arranged in a row along the second direction (X). Figure 2 shows an example in which four mounts 120 are provided, but the number may be changed.

The index module 200 transfers the substrate W between the cassette 20 placed on the holder 120 of the load port 100 and the buffer module 300. The index module 200 includes a frame 210, an index robot 220, and a guide rail 230. The frame 210 is generally provided in the shape of a rectangular parallelepiped with an empty interior, and is disposed between the load port 100 and the buffer module 300. The frame 210 of the index module 200 may be provided at a lower height than the frame 310 of the buffer module 300. The index robot 220 and guide rail 230 are disposed within the frame 210. The index robot 220 is provided so that the hand 221, which directly handles the substrate W, can move and rotate in the first direction (Y), the second direction (X), and the third direction (Z). The index robot 220 includes a hand 221, an arm 222, a support 223, and a stand 224. The hand 221 is fixedly installed on the arm 222. The arm 222 is provided in a stretchable structure and a rotatable structure. The longitudinal direction of the support 223 is arranged along the third direction (Z). The arm 222 is coupled to the support 223 so as to be movable along the support 223. The support 223 is fixedly coupled to the pedestal 224. The guide rail 230 is provided so that its longitudinal direction is arranged along the second direction (X). The stand 224 is coupled to the guide rail 230 so that it can move linearly along the guide rail 230. In addition, although not shown, the frame 210 is further provided with a door opener for opening and closing the door of the cassette 20.

The buffer module 300 includes a frame 310, a first buffer 320, a second buffer 330, and a cooling chamber 340. The frame 310 is provided in the shape of a rectangular parallelepiped with an empty interior, and is disposed between the index module 200 and the application and development module 400. First buffer 320, second buffer 330 and cooling chamber 340 are located within frame 310. The cooling chamber 340, the second buffer 330, and the first buffer 320 are sequentially arranged from below along the third direction (Z). The first buffer 320 is located at a height corresponding to the application module 401 of the application and development module 400, and the second buffer 330 and the cooling chamber 340 are located at a height corresponding to the application module 401 of the application and development module 400. It is provided at a height corresponding to the module 402.

The first buffer 320 and the second buffer 330 each temporarily store a plurality of substrates W. The first buffer 320 has a housing 321 and a plurality of supports 322. In the first buffer 320, the supports 322 are disposed within the housing 321 and are spaced apart from each other along the third direction (Z). The second buffer 330 has a housing 331 and a plurality of supports 332. In the second buffer 330, the supports 332 are disposed within the housing 331 and are spaced apart from each other along the third direction (Z). One substrate W is placed on each support 322 of the first buffer 320 and each support 332 of the second buffer 330. The housing 331 has an opening in the direction in which the index robot 220 is provided so that the index robot 220 can load or unload the substrate W into or out of the support 332 within the housing 331. The first buffer 320 has a generally similar structure to the second buffer 330. However, the housing 321 of the first buffer 320 has an opening in the direction in which the first buffer robot 360 is provided and in the direction in which the applicator robot 421 located in the applicator module 401 is provided. The number of supports 322 provided in the first buffer 320 and the number of supports 332 provided in the second buffer 330 may be the same or different. According to one example, the number of supports 332 provided in the second buffer 330 may be greater than the number of supports 322 provided in the first buffer 320.

The cooling chambers 340 cool the substrates W, respectively. Cooling chamber 340 includes a housing 341 and a cooling plate 342. The cooling plate 342 has an upper surface on which the substrate W is placed and a cooling means 343 for cooling the substrate W. As the cooling means 343, various methods, such as cooling using coolant or cooling using a thermoelectric element, may be used. Additionally, the cooling chamber 340 may be provided with a lift pin assembly for positioning the substrate W on the cooling plate 342 . The housing 341 is provided with an index robot 220 and a developing unit provided in the developing module 402 so that the index robot 220 can load or unload the substrate W into or out of the cooling plate 342. The robot has an opening in the direction provided. Additionally, the cooling chamber 340 may be provided with doors that open and close the above-described openings.

The application module 401 includes a process of applying a photosensitive liquid such as photoresist to the substrate W and a heat treatment process such as heating and cooling to the substrate W before and after the resist application process. The application module 401 has an application chamber 410, a heat treatment chamber portion 500, and a transfer chamber 420. The application chamber 410, the transfer chamber 420, and the heat treatment chamber unit 500 are sequentially arranged along the second direction (X). That is, based on the transfer chamber 420, the application chamber 410 is provided on one side of the transfer chamber 420, and the heat treatment chamber unit 500 is provided on the other side of the transfer chamber 420.

A plurality of application chambers 410 are provided, each of which is provided in a plurality in the third direction (Z). Additionally, as shown in FIG. 1, a plurality of application chambers 410 may be provided in the first direction (Y), or one application chamber 410 may be provided in the first direction (Y). The heat treatment chamber unit 500 includes a baking chamber 510 and a cooling chamber 520, and a plurality of the baking chamber 510 and the cooling chamber 520 are provided in the third direction (Z). The transfer chamber 420 is positioned parallel to the first buffer 320 of the first buffer module 300 in the first direction 12. An applicator robot 421 and a guide rail 422 are located within the transfer chamber 420. The transfer chamber 420 has a generally rectangular shape. The applicator robot 421 transfers the substrate W between the bake chamber 510, the cooling chamber 520, the application chamber 410, and the first buffer 320 of the first buffer module 300.

The guide rail 422 is arranged so that its longitudinal direction is parallel to the first direction (Y). The guide rail 422 guides the applicator robot 421 to move linearly in the first direction (Y). The applicator robot 421 has a hand 423, an arm 424, a support 425, and a stand 426. The hand 423 is fixedly installed on the arm 424. The arm 424 is provided in a stretchable structure so that the hand 423 can move in the horizontal direction. The support 425 is provided so that its longitudinal direction is arranged along the third direction (Z). The arm 424 is coupled to the support 425 so as to be able to move linearly in the third direction (Z) along the support 425. The support 425 is fixedly coupled to the pedestal 426, and the pedestal 426 is coupled to the guide rail 422 so as to be movable along the guide rail 422.

The application chambers 410 may all have the same structure, but the type of treatment liquid used in each application chamber 410 may be different. As a treatment liquid, a treatment liquid for forming a photoresist film or an anti-reflection film may be used.

The application chamber 410 applies the processing liquid on the substrate W. The application chamber 410 may be provided with a processing unit including a processing container 411, a support portion 412, and a nozzle portion 413.

For example, two processing units 411 are disposed in the application chamber 410 along the first direction (Y), but the present invention is not limited thereto, and two or more processing units may be disposed in one application chamber 410. Of course it is possible. Each processing unit may have the same structure. However, the type of treatment liquid used in each treatment unit may be different.

The processing container 411 of the application chamber 410 has a shape with an open top. The support portion 412 is located within the processing vessel 411 and supports the substrate (W). The support portion 412 is provided to be rotatable. The nozzle unit 413 supplies processing liquid onto the substrate W placed on the support unit 412. The treatment solution is applied to the substrate W using a spin coat method. In addition, the application chamber 410 includes a nozzle (not shown) that supplies a cleaning liquid such as deionized water (DIW) to clean the surface of the substrate W on which the processing liquid is applied, and a bag for cleaning the lower surface of the substrate W. A rinse nozzle (not shown) may be optionally further provided.

In the bake chamber 510, when the substrate W is placed by the applicator robot 421, the substrate W is heat treated.

In the bake chamber 510, a prebake process is performed to remove organic matter or moisture from the surface of the substrate W by heating the substrate W to a predetermined temperature before applying the processing solution, or applying the processing solution onto the wafer W. A soft bake process performed after application is performed, and a cooling process for cooling the substrate W is performed after each heating process.

The bake chamber 510 is equipped with a heating plate 511 and a cooling plate 512. The cooling plate 512 is provided with cooling means such as coolant or thermoelectric elements.

In the cooling chamber 520, a cooling process is performed to cool the substrate W before applying the processing liquid. The cooling chamber 5420 may be equipped with a cooling plate. The cooling plate may include a cooling means that can be used in various ways to cool the substrate W, such as cooling using coolant or cooling using a thermoelectric element.

The interface module 600 connects the coating and development module 400 with the external exposure device 800. The interface module 600 includes an interface frame 610, a first interface buffer 620, a second interface buffer 630, and a transfer robot 640, and the transfer robot 640 is a coating and development module 400. After this is completed, the substrate transferred to the first and second interface buffers 620 and 630 is transferred to the exposure apparatus 800. The first and second interface buffers 620 include a housing 621 and a support 622, and a transfer robot 640 and an applicator robot 421 load/unload the substrate W into/out of the support 622. do.

A substrate processing device with this configuration arranges a plurality of process processing units in a process chamber to improve substrate processing efficiency and productivity, and uses these process processing units to supply various types of processing liquids to each substrate. Then proceed with the photo processing process. The side wall of this process chamber is equipped with a shutter to open and close the opening for carrying in and out of the substrate. During the process of processing the substrate in one process processing unit within the process chamber, the substrate is transported in or out of the other process processing unit. , When the shutter placed on the side wall of the process chamber opens and closes the opening of the side wall, the internal space of the process chamber is exposed to the outside, so a differential pressure hunting phenomenon may occur due to air flow due to the differential pressure between the process chamber and the outside. In addition, it can be a factor that hinders the maintenance of temperature and humidity in the internal space of the process chamber.

In order to solve these problems, the present invention describes the configuration of a substrate processing apparatus according to various embodiments below.

Figure 4 is an exemplary diagram showing a substrate processing apparatus according to an embodiment of the present invention, Figure 5 is an exemplary diagram showing a partial structure in which a shutter is disposed on one side wall of the process chamber of Figure 4 where the opening is disposed, and Figure 6 is an exemplary diagram showing a structure. It is an exemplary diagram showing the configuration of a gas flow path of a shutter of a substrate processing apparatus according to an embodiment of the present invention, and Figure 7 is an exemplary diagram showing the configuration of a gas flow path of a shutter of a substrate processing apparatus according to another embodiment of the present invention. 8 is an exemplary diagram showing the configuration of a cleaning nozzle unit of the substrate processing apparatus of the present invention, and Figure 9 is an exemplary diagram showing a substrate processing apparatus according to another embodiment of the present invention.

1 to 9, a substrate processing apparatus 1000 according to an embodiment of the present invention includes a process chamber 1100 and a shutter 1200.

The process chamber 1100 may be the application chamber 410 described above. In this case, the outside of the process chamber 1100 may be the transfer chamber 420 described above. However, the present invention is not limited to this, and of course can also be applied to a process chamber that performs a liquid treatment process on a substrate, for example, a deposition process, an etching process, a photo process, a cleaning process, etc.

A plurality of process processing units 1300 and a processing liquid supply unit 1400 that supplies processing liquid to the substrate W within the process processing unit 1300 may be disposed in the process chamber 1100 .

For example, as shown in FIG. 4, two process processing units 1300 may be disposed inside the process chamber 1100 to respectively process the substrate W. However, the present invention is not limited to this, and three or three or more processing units 1300 may be disposed within the process chamber 1100 as needed. Each of these processing units 1300 may include a processing container 1310 and a support portion 1320 that is disposed inside the processing container 1310 and supports the substrate W.

The processing vessel 1310 is disposed within the process chamber 1100 and may include a processing space 1311 in which the substrate W is accommodated. When the processing liquid is discharged from the processing liquid supply unit 1400, the processing container 1310 may receive the processing liquid sprayed from the substrate W and discharge it to the outside of the processing container 1310. Specifically, the process processing unit 1300 includes a processing liquid discharge unit 1330 connected to the processing space 1311 of the processing container 1310, and the substrate (W) within the processing space 1311 of the processing container 1310. ) can be discharged to the outside of the process chamber 1100.

The processing container 1310 has an open top, for example, a cup shape, and a support portion 1320 that supports the substrate W may be disposed in the processing space 1311. For example, as shown in FIG. 4, the processing container 1310 is positioned inside each cup in the form of an inner cup 1340 surrounding the outer side of the support portion 1320 and an outer cup 1340 disposed on the outer side of the inner cup 1340. It may include a cup 1350. A hole through which the support shaft 1321 of the support portion 1320 passes may be formed in the center of the inner cup 1340. The upper outer portion of the inner cup 1340 may be curved downward toward the outer cup 1350, and the upper outer portion of the inner cup 1340 may serve as an area through which processing liquid and gas flow. In other words, it can guide the flow of processing liquid and gas through the space between the inner cup 1340 and the outer cup 1350. The outer cup 1350 may be installed in a cup shape to surround the outside of the support portion 1320 and the inner cup 1340, and may include a bottom 1351, a side wall 1352, and an inclined wall 1353. The bottom 1351 of the outer cup 1350 may have a hollow circular plate shape, and the processing liquid discharge unit 1330 that discharges the processing liquid supplied to the substrate W and the processing container 1310 An exhaust unit 1360 that discharges gas in the space 1311 to the outside may be connected. The treatment liquid discharged by the treatment liquid discharge unit 1330 may be discarded or reused by an external liquid recovery system. The side wall 1352 of the outer cup 1350 may have a circular cylindrical shape surrounding the outside of the support portion 1320 and may extend upward along a vertical direction from the side edge of the bottom 1351. The inclined wall 1353 of the outer cup 1350 may extend in the inner direction of the outer cup 1350 from the top of the side wall 1352 in a ring shape, and the upper end of the inclined wall 1353 is supported on the support portion 1320. It may be positioned higher than the substrate (W).

The support portion 1320 is located within the processing vessel 1310 and supports the substrate (W). The support portion 1320 is provided to be rotatable by a driving means 1370, such as a motor. In addition, the substrate processing apparatus 1000 can support the substrate W to rotate and move up and down inside the processing container 1310 through the support portion 1320, so that the substrate W rotates when processing the substrate W. The substrate W can be treated by supplying liquid to the substrate W through the processing liquid supply unit 1400 in the supported state.

The processing liquid supply unit 1400 may process the substrate W by supplying the processing liquid to the substrate W within the processing space 1311 of the processing container 1310. Here, the processing liquid supply unit 1400 includes a nozzle unit 1410 that supplies the processing liquid to the substrate (W) disposed on the support portion 1320 of the process processing unit 1300, and a processing liquid source (S1) that supplies the processing liquid. ) and a treatment liquid supply line 1420 connecting the nozzle unit 1410. Various components that process the processing liquid before being supplied to the substrate W through the nozzle unit 1410 may be disposed on the processing liquid supply line 1420. For example, one end of the treatment liquid supply line 1420 is connected to a treatment liquid supply source (S1) such as a tank or bottle, and on the treatment liquid supply line 1420, the treatment liquid is filtered to remove impurities present in the treatment liquid. , a filter unit that can filter and remove charged charges or substances to be removed as needed, and a trap tank that temporarily stores the treatment liquid supplied from the treatment liquid supply source (S1) and allows the treatment liquid to be discharged to the outside. ), a bubble separation unit that separates bubbles inside the treatment liquid, and a pump that pumps the treatment liquid at a certain pressure and supplies it to the nozzle unit 1410, etc. may be disposed.

Here, the nozzle unit 1410 supplies the processing liquid onto the substrate W placed on the support unit 1320. The treatment liquid may be a photosensitive liquid such as photoresist and is applied to the substrate W using a spin coat method.

This nozzle unit 1410 can be moved between a plurality of process processing units 1300 by the nozzle unit moving unit 1430, so that one nozzle unit 1410 is shared to support the plurality of process processing units 1300 ( 1320), it is possible to process the substrate (W) placed on the substrate (W), thereby improving processing efficiency and productivity for the substrate (W). In addition, the process chamber 1100 includes a separate nozzle unit (not shown) that supplies a cleaning liquid such as deionized water (DIW) to clean the surface of the substrate W on which a processing liquid such as photoresist is applied, and A back rinse nozzle unit (not shown) for cleaning the lower surface may be optionally further provided.

Additionally, a process gas flow generator 1500 may be disposed in the process chamber 1100 to generate a flow of the process gas by supplying the process gas into the process chamber 1100.

Here, the process gas flow generator 1500, which supplies the process gas into the process chamber 1100 and generates a flow of the process gas, may include a fan filter unit 1510 and a chamber exhaust unit 1520. The fan filter unit 1510 of the process gas flow generator 1500 is connected to the process gas supply source S2 through the process gas supply line 1530 and can supply purified process gas into the process chamber 1100. Here, the process gas may be clean air. This fan filter unit 1510 is disposed on the upper wall of the process chamber 1100 and flows the purified process gas from the top to the bottom into the process chamber 1100 through the filter 1540 disposed in the process gas supply line 1530. It may be configured to blow air. The chamber exhaust unit 1520 of the process gas flow generator 1500 may be disposed at the bottom of the process chamber 1100 and may be connected to an exhaust means such as a vacuum pump to exhaust the process gas within the process chamber 1100. The process gas flow generator 1500 may generate an airflow for the process gas to descend within the process chamber 1100 by configuring the fan filter unit 1510 and the chamber exhaust unit 1520.

Additionally, this process chamber 1100 may be provided with an opening 1111 on one side wall 1110 through which the substrate W is carried in and out. During the process of processing the substrate W in one of the plurality of process processing units 1300 disposed in the process chamber 1100, the other process processing unit 1300 operates in the process chamber 1100. The substrate W may be brought in or taken out through the opening 1111 provided in one side wall 1110 of .

The shutter 1200 provided to open and close the opening 1111 of the process chamber 1100 may be placed on the inner wall of the process chamber 1100 corresponding to the opening 1111 to be able to open and close the opening 1111. there is. The shutter 1200 may be driven to be movable by the shutter driver 1220 and may be disposed to open and close the opening 1111. As an example, the shutter 1200 may be driven to move up and down by the shutter driver 1220. A gas flow path 1210 connected to a gas supply unit 1600 that supplies gas may be disposed inside the shutter 1200. When the opening 1111 of the process chamber 1100 is opened, the gas flow path 1210 of the shutter 1200 sprays gas into the process chamber 1100 to surround the periphery of the opening 1111 through the gas supply unit 1600. It can be configured to do so.

The gas flow path 1210 of the shutter 1200 may be configured to form a ring-shaped gas curtain having a size larger than the opening size of the opening 1111 of the process chamber 1100. Accordingly, in the process of the shutter 1200 opening the opening 1111 of the process chamber 1100, gas is supplied from the gas supply unit 1600 to the gas flow path 1210 of the shutter 1200 to surround the opening 1111. By forming a surrounding ring-shaped gas curtain, a shielding effect from the outside can be realized, and furthermore, the discharge of gas in the process chamber 1100 to the outside through the opening 1111 can be minimized. In addition, by discharging gas from the gas supply unit 1600 into the process chamber 1100 through the gas flow path 1210 of the shutter 1200, the process chamber 1100 is discharged to the outside through the opening 1111. By compensating for the differential pressure of the gas inside and outside the process chamber 1100, differential pressure hunting of the gas in the process chamber 1100 can be minimized.

The gas flow path 1210 of the shutter 1200 may be formed in various forms.

For example, as shown in FIGS. 5 and 6, the gas flow path 1210 of the shutter 1200 is shaped like a ring on the side of the shutter 1200 corresponding to the circumference of the opening 1111 of the process chamber 1100. A discharge port 1211 may be provided. Therefore, the gas supplied from the gas supply unit 1600 to the shutter 1200 passes through the gas flow path 1210 inside the shutter 1200 and is discharged toward the ring-shaped discharge port 1211 and then through the opening of the process chamber 1100 ( It may be configured to inject gas into the process chamber 1100 through the gap G between the shutter 1111) and the shutter 1200, and accordingly, as indicated in the flow direction of the gas in FIG. 6, the process chamber ( A ring-shaped gas curtain surrounding the opening 1111 of 1100 may be formed.

As another example, as shown in FIG. 7, the gas flow path 1210a of the shutter 1200a is located on the side of the shutter 1200a corresponding to the perimeter of the opening 1111 of the process chamber 1100. ) may be provided with a plurality of discharge holes 1211a spaced apart along the circumferential direction of the opening 1111. Therefore, the gas supplied from the gas supply unit 1600 to the shutter 1200a passes through the gas flow path 1210a inside the shutter 1200a and is discharged toward the plurality of discharge holes 1211a arranged in an overall ring shape and then into the process chamber ( It may be configured to inject gas into the process chamber 1100 through the gap G between the opening 1111 of the 1100 and the shutter 1200a, and accordingly, the gas flow direction in FIG. 7 is as indicated. Likewise, a ring-shaped gas curtain surrounding the opening 1111 of the process chamber 1100 can be formed.

However, the present invention is not limited to the arrangement structure of the gas flow path of the shutter, and may be configured in various forms as long as it can implement a shielding effect from the outside of the process chamber. For example, the outlet of the gas flow path of the shutter may not be provided on the side of the shutter corresponding to the circumference of the opening, but may be provided on the peripheral wall of the shutter, thereby spraying gas directly in the circumferential direction of the shutter.

Meanwhile, the substrate processing apparatus 1000 of the present invention includes a control unit C electrically connected to the shutter 1200 and a control unit C electrically connected to the shutter 1200 to control the supply amount of gas into the process chamber 1100. It may further include a sensor unit (S) that measures differential pressure.

This control unit (C) is electrically connected to the shutter driver 1220 of the shutter 1200 and controls the on/off, output, etc. of the shutter driver 1220 to control the shutter 1200 relative to the opening 1111 of the process chamber 1100. ) can control the opening and closing operation. Additionally, the control unit C can control the supply of gas to the shutter 1200.

The sensor unit S is a component that measures the differential pressure of gas inside and outside the process chamber 1100, and can be disposed on one side wall 1110 of the process chamber 1100 to be exposed to the inside and outside of the process chamber 1100. It may be a differential pressure sensor that can directly measure the differential pressure of gas inside and outside the process chamber 1100. However, the present invention is not limited to this, but measures the pressure of the gas inside the process chamber 1100 and the pressure of the gas outside the process chamber 1100, and then calculates the differential pressure of the gas inside and outside the process chamber 1100. It may also be implemented in the form of, etc.

Specifically, the control unit (C) operates the shutter ( 1200) can be controlled. Accordingly, the differential pressure hunting of the process chamber 1100 can be minimized, the differential pressure inside and outside the process chamber 1100 can be maintained, and the processing performance of the substrate W of the substrate processing apparatus 1000 can be stabilized.

Meanwhile, in order to supply gas to the gas flow path 1210 of the shutter 1200, the gas supply unit 1600 may include a gas supply line 1610 connected to a gas supply source S3 that supplies gas. That is, the gas supply line 1610 connects the gas supply source S3 and the gas flow path 1210 of the shutter 1200. Various components, such as valves and filters for filtering gas, may be placed in this gas supply line 1610 as needed. For example, a gas supply valve that controls the supply of gas to the gas flow path 1210 of the shutter 1200. (1620) can be placed.

This gas supply unit 1600 is a process in which the temperature and humidity supplied to the inner space of the process chamber 1100 is adjusted, as shown in FIG. 9, in order to maintain the temperature and humidity within the process chamber 1100 when carrying in and out of the substrate W. It can be connected to a process gas source (S2) that supplies gas. That is, the gas supply unit 1600 serves as a temperature and humidity supply source (S2) for supplying a gas whose temperature and humidity are adjusted so that the process of the substrate processing apparatus 1 shown in FIG. 1 is performed at an appropriate temperature and humidity. It can be connected to a controller (Temperature Humidity Controller, THC). In this case, the gas supply line 1610 of the gas supply unit 1600 is connected to the process gas supply line 1530, and a control valve (V) is installed at the connection portion between the gas supply line 1610 and the process gas supply line 1530. It is arranged to control the supply of gas from the process gas source S2 to the gas supply line 1610 and the process gas supply line 1530.

However, the present invention is not limited to this, and the gas supply unit may be connected to a separate gas supply source that supplies an inert gas that is difficult to react with a processing liquid for treating the substrate in the process chamber. As another example, the gas supply unit 1600 may be connected to an N ₂ purge gas source that supplies N ₂ purge gas.

Meanwhile, as shown in FIGS. 1, 8, and 9, the process processing unit 1300 includes a ring-shaped cleaning nozzle unit that sprays cleaning fluid toward the lower part of the substrate W disposed on the support part 1320. May include (1380). Here, the cleaning nozzle unit 1380 sprays cleaning fluid toward the lower edge of the substrate W to clean the bevel area of the substrate. This cleaning nozzle unit 1380 is disposed below the support unit 1320 of the process unit 1300 and is connected to the cleaning fluid supply unit 1700 that supplies the cleaning fluid to supply the cleaning fluid toward the bottom of the substrate W. It can be sprayed. Here, the cleaning fluid supply unit 1700 may include a cleaning fluid supply line 1710 connected to the cleaning fluid supply source S4 that supplies cleaning fluid to the cleaning nozzle unit 1380. That is, the cleaning fluid supply line 1710 connects the cleaning fluid supply source S4 and the cleaning nozzle unit 1380. Various components such as valves may be placed in this cleaning fluid supply line 1710 as needed. For example, a cleaning fluid supply valve 1720 that controls the supply of cleaning fluid to the cleaning nozzle unit 1380 may be disposed. You can.

As shown in FIG. 8, the cleaning nozzle unit 1380 may be provided with a plurality of cleaning fluid discharge ports 1381 spaced apart along the circumferential direction in a ring-shaped body.

Here, the cleaning fluid may be a cleaning liquid or a cleaning gas as needed.

When the cleaning fluid is a cleaning fluid, the cleaning fluid supply unit 1700 may be connected to a cleaning fluid supply source (not shown) that supplies the cleaning fluid. Accordingly, the cleaning nozzle unit 1380 receives the cleaning liquid from the cleaning fluid supply unit 1700 and sprays the cleaning liquid toward the lower part of the substrate W, thereby improving the cleaning efficiency of the lower part of the substrate W.

As another example, the cleaning nozzle unit 1380 is attached to the support unit 1320 of the process unit 1300 in order to clean the lower portion of the substrate W and maintain the differential pressure of gases inside and outside the process chamber 1100. Gas may be sprayed toward the lower portion of the disposed substrate (W).

Specifically, the cleaning nozzle unit 1380 may spray the same gas as the gas supplied into the process chamber 1100 by the shutter 1200. In this case, the cleaning fluid supply unit 1700 may be connected to a process gas supply source S2 that supplies a process gas with controlled temperature and humidity supplied to the internal space of the process chamber 1100. Accordingly, cleaning of the lower portion of the substrate W can be implemented through the cleaning nozzle unit 1380, and thus contamination of the substrate W can be effectively prevented. In addition, the differential pressure of gases inside and outside the process chamber 1100 and the temperature and humidity within the process chamber 1100 can be maintained when the substrate W is transported in and out through the cleaning fluid supply unit 1700. However, the present invention is not limited thereto, and the cleaning fluid supply unit 1700 may be connected to an N ₂ purge gas source (not shown) that supplies N ₂ purge gas.

As a result, according to the configuration of the substrate processing apparatus 1000 of the present invention, the shutter 1200 is provided with a gas flow path 1210 connected to the gas supply source S3, so that the shutter 1200 is connected to the process chamber 1100. In the process of opening the opening 1111, gas is supplied from the gas supply unit 1600 to the gas passage 1210 of the shutter 1200 and the gas is sprayed into the process chamber 1100 to surround the opening 1111. A shielding effect from the outside of the process chamber 1100 can be implemented, and furthermore, the discharge of gas within the process chamber 1100 to the outside through the opening 1111 can be minimized. In addition, by discharging gas from the gas supply unit 1600 into the process chamber 1100 through the gas flow path 1210 of the shutter 1200, the process chamber 1100 is discharged to the outside through the opening 1111. By compensating for the differential pressure of the gas inside and outside the process chamber 1100, differential pressure hunting of the gas in the process chamber 1100 can be minimized.

1000 Substrate Processing Equipment 1100 Process Chamber
1110 side wall 1111 opening
1200, 1200a shutter 1210, 1210a gas flow path
1211, 1211a discharge port 1220 shutter drive unit
1300 Processing Unit 1310 Processing Container
1311 processing space 1320 support
1321 Support shaft 1330 Treatment liquid discharge unit
1340 inner cup 1350 outer cup
1351 bottom 1352 side wall
1353 inclined wall 1360 exhaust section
1370 Drive means 1380 Cleaning nozzle unit
1381 Cleaning fluid outlet 1400 Treatment fluid supply unit
1410 nozzle unit 1420 treatment liquid supply line
1430 Nozzle moving part 1500 Process gas flow generating part
1510 Fan Filter Unit 1520 Chamber Exhaust
1530 Process gas supply line 1540 Filter
1600 gas supply unit 1610 gas supply line
1620 Gas supply valve 1700 Cleaning fluid supply unit
1710 Cleaning fluid supply line 1720 Cleaning fluid supply valve
C Control G Clearance
S sensor unit S1 processing liquid source
S2 process gas source S3 gas source
S4 Cleaning fluid source V control valve
W substrate

Claims (9)

a process chamber in which a plurality of process processing units for processing substrates are disposed, and an opening through which substrates are transported in and out of one side wall; and
The opening is arranged to be openable and closed on the inner wall of the process chamber corresponding to the opening, and is connected to a gas supply unit that supplies gas. When the opening is opened, the process chamber surrounds the opening through the gas supply unit. A substrate processing apparatus including a shutter in which a gas flow path for spraying gas therein is disposed. According to paragraph 1,
The gas flow path is configured to form a ring-shaped gas curtain having a size larger than the opening size of the opening. According to paragraph 2,
The gas flow path is provided with a discharge hole formed in a ring shape on a side of the shutter corresponding to the circumference of the opening, and is configured to spray gas through a gap between the opening and the shutter. According to paragraph 2,
The gas flow path is provided with a discharge hole formed in a ring shape on a side of the shutter corresponding to the circumference of the opening, and is configured to spray gas through a gap between the opening and the shutter. According to paragraph 1,
a control unit electrically connected to the shutter; and
It includes a sensor unit that measures the differential pressure of gas inside and outside the process chamber,
The control unit controls the shutter to inject the gas into the process chamber at an injection amount that compensates for the differential pressure according to the differential pressure measured from the sensor unit. According to paragraph 1,
The gas supply unit is connected to a process gas supply source that supplies a process gas with controlled temperature and humidity supplied to the internal space of the process chamber. According to paragraph 1,
The gas supply unit is connected to an N ₂ purge gas source that supplies N ₂ purge gas. According to paragraph 1,
It is disposed in the inner space of the process chamber and includes a process processing unit that processes the substrate,
The processing unit includes a support portion that supports the substrate accommodated therein, a ring-shaped cleaning nozzle portion that is disposed below the support portion and is connected to a cleaning fluid supply portion that supplies cleaning fluid, and sprays the cleaning fluid toward the lower portion of the substrate. Including, a substrate processing device. According to clause 8,
The cleaning fluid supply unit is connected to a process gas supply source that supplies a process gas with controlled temperature and humidity supplied to the inner space of the process chamber, an N ₂ purge gas supply source that supplies N ₂ purge gas, or a cleaning fluid supply source that supplies a cleaning fluid. Substrate processing equipment.

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