KR20240052296A - Light emitting display device and method for manufacturing the same - Google Patents

Abstract

A light emitting display device according to the present specification includes a substrate including a display area and a non-display area around the display area, a sub-pixel disposed in the display area, a blocking structure disposed in the non-display area, and covering the sub-pixel, It includes an encapsulation layer having an inorganic film extending to contact one side of the blocking structure and an organic film on the inorganic film, and the inorganic film and the organic film may extend to the blocking structure.

Description

Light emitting display device and method of manufacturing the same {LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME}

This specification relates to a light emitting display device and a method of manufacturing the same.

Light-emitting displays have high-speed response speeds, low power consumption, and, unlike liquid crystal displays, do not require a separate light source and are self-luminous, so they are attracting attention as next-generation flat panel displays.

A light emitting display device displays an image through light emission from a light emitting element layer including a light emitting layer sandwiched between two electrodes. At this time, the light generated by the light emission of the light emitting device layer is emitted to the outside through the electrode and substrate.

Such light-emitting display devices are easily deteriorated by deterioration of the light-emitting element layer due to oxygen, deterioration by reaction between the light-emitting layer and the interface, and penetration of external moisture, oxygen, ultraviolet rays, etc. In particular, the encapsulation method of a light emitting display device is very important because the penetration of external oxygen and moisture has a fatal effect on the lifespan of the device.

A conventional method of encapsulating a light emitting display device involves sealing a substrate on which a light emitting element layer is formed with a protective cap.

However, the encapsulation method using a protective cap requires the use of a separate moisture absorbent for sealing, so the process is complicated, the volume and thickness of the light-emitting display device may increase, and if the material of the protective cap is glass, it is flexible. There was this difficult problem.

The contents of the background technology described above are technical information that the inventor of the present specification possessed to derive the embodiments of the present specification or acquired in the process of deriving the embodiments of the present specification, and must be disclosed to the general public prior to filing the application for the present specification. It cannot be said to be a known technology disclosed to the public.

The technical task of this specification is to provide a light emitting display device and a manufacturing method thereof that can have a simple process, reduce volume and thickness, and improve moisture permeability performance.

The problems to be solved according to the embodiments of the present specification are not limited to the above-mentioned problems, and other problems not mentioned can be solved by those skilled in the art in the technical field to which the technical idea of the present specification pertains. can be clearly understood.

A light emitting display device according to the present specification includes a substrate including a display area and a non-display area around the display area, a sub-pixel disposed in the display area, a blocking structure disposed in the non-display area, and covering the sub-pixel, It includes an encapsulation layer having an inorganic film extending to contact one side of the blocking structure and an organic film on the inorganic film, and the inorganic film and the organic film may extend to the blocking structure.

The blocking structure may include a first structure adjacent to the display area and a second structure spaced apart from the first structure.

The encapsulation layer includes a first inorganic layer covering a portion of the first structure, a first organic layer over the first inorganic layer, a second inorganic layer over the first organic layer and covering a portion of the second structure, and It may include a second organic layer covering the second inorganic layer.

The ends of the first inorganic layer and the first organic layer may coincide with each other, and the ends of the second inorganic layer and the second organic layer may coincide with each other.

The side surface of the first inorganic layer may be in contact with the second inorganic layer.

forming a sub-pixel in a display area of a substrate, preparing a substrate with a blocking structure formed in a non-display area of the substrate, and an inorganic layer covering the sub-pixel and extending to the blocking structure and an organic layer on the inorganic layer. and forming an encapsulation layer having a film, wherein the inorganic film and the organic film may extend to the blocking structure.

Forming an encapsulation layer includes laminating a first inorganic layer on the front surface of the substrate on which the sub-pixel and the blocking structure are formed, forming a first organic layer on the first inorganic layer, and using the first organic layer as a mask. etching the first inorganic layer, stacking a second inorganic layer on the entire surface of the substrate, forming a second organic layer on the second inorganic layer, and using the second organic layer as a mask. It may include etching the second inorganic layer.

The blocking structure includes a first structure adjacent to the display area and a second structure spaced apart from the first structure, and the first organic layer is applied to extend from the display area and contact one side of the first structure, The second organic layer may be applied to extend from the display area and contact one side of the second structure.

The ends of the first inorganic layer and the first organic layer may coincide with each other, and the ends of the second inorganic layer and the second organic layer may coincide with each other.

The side surface of the first inorganic layer may be in contact with the second inorganic layer.

The first inorganic layer and the second inorganic layer may be laminated using at least one of ALD (Atomic layer deposition) and CVD (Chemical vapor deposition).

The first organic layer and the second organic layer may be applied using any one of ink-jet, vacuum screen print (VSP), and organic deposition methods.

Specific details according to various examples of this specification other than the means of solving the above-mentioned problems are included in the description and drawings below.

The light emitting display device and its manufacturing method according to the present specification have a simple process, can reduce volume and thickness, and can improve moisture permeability regardless of the substrate.

Since the contents of the problem to be solved, the means for solving the problem, and the effects mentioned above do not specify the essential features of the claims, the scope of the claims is not limited by the matters described in the contents of the invention.

1 is a diagram schematically showing a light emitting display device according to the present specification.
FIG. 2 is an equivalent circuit diagram showing the pixel shown in FIG. 1.
FIG. 3 is a cross-sectional view showing the structure of the pixel shown in FIG. 1.
Figure 4 is a cross-sectional view showing an encapsulation layer of a light emitting display device according to an embodiment of the present specification.
5A to 5H are cross-sectional views showing a method of manufacturing a light emitting display device according to an embodiment of the present specification.

The advantages and features of the present specification and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present specification is not limited to the embodiments disclosed below and will be implemented in various different forms, but the present embodiments only serve to ensure that the disclosure of the present specification is complete, and are common knowledge in the technical field to which the present specification pertains. It is provided to fully inform those who have the scope of the invention, and this specification is only defined by the scope of the claims.

The shape, size, ratio, angle, number, etc. disclosed in the drawings for explaining the embodiments of the present specification are illustrative, and the present specification is not limited to the matters shown. Like reference numerals refer to like elements throughout the specification. Additionally, in describing the present specification, if it is determined that a detailed description of related known technologies may unnecessarily obscure the gist of the present specification, the detailed description will be omitted. When “includes,” “has,” “consists of,” etc. mentioned in the specification are used, other parts may be added unless “only” is used. In cases where a component is expressed in the singular, the plural is included unless specifically stated otherwise.

When analyzing a component, the error range is interpreted to include the error range even if there is no separate explicit description of the error range.

In the case of a description of a positional relationship, for example, if the positional relationship of two parts is described as “on top,” “at the top,” “at the bottom,” “next to,” etc., for example, “right away.” Alternatively, there may be one or more other parts between the two parts, unless "directly" is used.

Although first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are merely used to distinguish one component from another. Accordingly, the first component mentioned below may also be the second component within the technical idea of the present specification.

In describing the components of this specification, terms such as first, second, A, B, (a), and (b) may be used. These terms are only used to distinguish the component from other components, and the nature, sequence, order, or number of the components are not limited by the term. When a component is described as being “connected,” “coupled,” or “connected” to another component, that component may be connected or connected to that other component directly, but indirectly, unless specifically stated otherwise. It should be understood that other components may be “interposed” between each component that is connected or capable of being connected.

“At least one” should be understood to include any combination of one or more of the associated elements. For example, “at least one of the first, second, and third components” means not only the first, second, or third component, but also two of the first, second, and third components. It can be said to include a combination of all or more components.

In this specification, a “light emitting display device” may include a display device such as an organic light emitting display module (OLED module) that includes a display panel and a driver for driving the display panel. And, electronic equipment including laptop computers, televisions, computer monitors, automotive or automotive apparatus, or other types of vehicles, which are complete products or final products including OLED modules, etc. It may also include a set electronic apparatus or a set device, such as a mobile electronic apparatus such as an apparatus, a smart phone, or an electronic pad.

Accordingly, the display device in this specification may include the display device itself, such as an OLED module, and a set device that is an application product or end consumer device including an OLED module.

Additionally, in some examples, an OLED module composed of a display panel and a driver may be expressed as a “display device,” and an electronic device as a finished product including an OLED module may be expressed as a “set device.” For example, a display device may include an organic light emitting diode (OLED) display panel and a source PCB, which is a control unit for driving the display panel. The set device may further include a set PCB, which is a set control unit that is electrically connected to the source PCB and drives the entire set device.

The display panel used in the embodiments of this specification may be any type of display panel, such as an organic light emitting diode (OLED) display panel and an electroluminescent display panel. The examples are not limited to this.

When the display panel is an organic electroluminescent (OLED) display panel, it may include a plurality of gate lines, data lines, and pixels formed in intersection areas of the gate lines and data lines. And, an array substrate including a thin film transistor, which is a device for selectively applying voltage to each pixel, an organic light emitting device (OLED) layer on the array substrate, and an encapsulation substrate disposed on the array substrate to cover the organic light emitting device layer. Alternatively, it may be configured to include an encapsulation substrate, etc. The encapsulation substrate protects the thin film transistor and the organic light emitting device layer from external shock and can prevent moisture or oxygen from penetrating into the organic light emitting device layer. Additionally, the layer formed on the array substrate may include an inorganic light emitting layer, for example, a nano-sized material layer, and a quantum dot light emitting layer. Other examples may include micro light emitting diodes.

The display panel may further include a backing or rear surface such as a metal plate attached to the display panel. Other structures may also be included, for example, other structures made of other materials.

Each feature of the various embodiments of the present specification can be combined or combined with each other, partially or entirely, and various technological interconnections and operations are possible, and each embodiment may be implemented independently of each other or together in a related relationship. It may be possible.

Hereinafter, embodiments of the present specification will be examined through the attached drawings and examples. The scale of the components shown in the drawings is different from the actual scale for convenience of explanation, and is therefore not limited to the scale shown in the drawings.

1 is a diagram schematically showing a light emitting display device according to the present specification.

Referring to FIG. 1, a light emitting display device 100 according to an embodiment of the present specification may include a display panel 101. The display panel 101 may include a display area AA where a plurality of sub-pixels PX are arranged, and a non-display area NA disposed around the display area AA.

The sub-pixel PX of the display area AA may include a thin film transistor using an oxide semiconductor material as an active layer.

A plurality of data lines DL and a plurality of gate lines GL may be disposed in the display area AA. For example, a plurality of data lines DL may be arranged in rows or columns, and a plurality of gate lines RL may be arranged in columns or rows. Additionally, a sub-pixel (PX) may be placed in an area defined by the data line (DL) and the gate line (GL).

The plurality of gate lines GL may include a plurality of scan lines and a plurality of emission control lines. A plurality of scan lines and a plurality of light emission control lines are provided to the gate nodes of different types of transistors (e.g., scan transistors, light emission control transistors) disposed in the sub-pixel (PX). For example, they may be wires that transmit scan signals or light emission control signals).

At least one of the data driver 104 and the gate driver 103 may be disposed in the non-display area (NA). Additionally, the non-display area NA may further include a bending area BA where the substrate of the display panel 101 is bent, but embodiments of the present specification are not limited thereto. For example, the bending area BA may be configured in the display area AA.

The gate driver 103 may include a thin film transistor formed directly on the substrate of the display panel 101. For example, the gate driver 103 is configured by pairing a thin film transistor with a polycrystalline silicon semiconductor layer, a thin film transistor with an oxide semiconductor layer, or a thin film transistor with a polycrystalline silicon semiconductor layer and a thin film transistor with an oxide semiconductor layer. It can be. When the thin film transistors disposed in each of the non-display area (NA) and the display area (AA) are composed of the same semiconductor material, the thin film transistors disposed in each of the non-display area (NA) and the display area (AA) are simultaneously processed in the same process. It can proceed.

Thin film transistors with such an oxide semiconductor layer and thin film transistors with a polycrystalline silicon semiconductor layer have high electron mobility in the channel, enabling high resolution and low power.

The gate driver 103 sequentially supplies scan signals of the gate on voltage to the plurality of gate lines GL or in a predetermined order, thereby driving each pixel row in the display area sequentially or in a predetermined order. Run it. Here, the gate driver 103 is also called a scan driver. Here, a pixel row refers to a row formed by pixels connected to one gate line. Like the display device according to the embodiment of the present specification, the gate driver 103 may be implemented as a GIP (Gate In Panel) type and placed directly on the substrate of the display panel 101. The gate driver 103 may include a shift register, a level shifter, etc.

The gate driver 103 is a scan driving circuit that outputs scan signals through a plurality of scan lines, which are a type of gate line (GL), and a light emission driving circuit that outputs light emission control signals through a plurality of light emission control lines, which is another type of gate line. may include.

The display device 100 according to an embodiment of the present specification may further include a data driver 104. The data driver 104 converts the image data into analog data voltages and supplies the data voltages to the plurality of data lines DL when a specific gate line is driven by the gate driver 103.

The data line DL may be arranged to pass through the bending area BA, and various data lines DL may be arranged and connected to the data driver 104 through a data pad.

The bending area BA may be an area where the substrate of the display panel 101 is bent. The substrate of the display panel 101 may be maintained in a flat state except for the bending area BA.

FIG. 2 is an equivalent circuit diagram showing the pixel shown in FIG. 1.

Referring to FIG. 2 , one sub-pixel (PX) of a light emitting display device according to an embodiment of the present invention includes a pixel circuit (PC) and a light emitting element (ED).

The pixel circuit (PC) is provided in the circuit area of the pixel area defined by the gate line (GL) and the data line (DL), and is connected to the adjacent gate line (GL) and data line (DL) and the first driving power source (VDD). connected to This pixel circuit (PC) controls light emission of the light emitting element (ED) according to the data voltage (Vdata) from the data line (DL) in response to the gate on signal (GS) from the gate line (GL). The pixel circuit (PC) according to one example includes a switching thin film transistor (ST), a driving thin film transistor (DT), and a capacitor (Cst).

The switching thin film transistor (ST) has a gate electrode connected to the gate line (GL), a first source/drain electrode connected to the data line (DL), and a second source/drain electrode connected to the gate electrode of the driving thin film transistor (DT). Includes. This switching thin film transistor (ST) is turned on according to the gate on signal (GS) supplied to the gate line (GL) and drives the data voltage (Vdata) supplied to the data line (DL) to the gate of the thin film transistor (DT). supply to the electrode.

The driving thin film transistor (DT) includes a gate electrode connected to the second source / drain electrode of the switching thin film transistor (ST), a first source / drain electrode (or drain electrode) connected to the first driving power supply (VDD), and a light emitting element ( ED) and a first source/drain (or source electrode) connected to the electrode. This driving thin film transistor (DT) is turned on according to the gate-source voltage based on the data voltage (Vdata) supplied from the switching thin film transistor (ST) and transmits power from the first driving power source (VDD) to the light emitting element (ED). Controls the supplied data signal.

The capacitor Cst is connected between the gate electrode and the source electrode of the driving thin film transistor DT, stores the voltage corresponding to the data voltage Vdata supplied to the gate electrode of the driving thin film transistor DT, and is driven with the stored voltage. Turn on the thin film transistor (DT). At this time, the capacitor Cst maintains the turn-on state of the driving thin film transistor DT until the data voltage Vdata is supplied through the switching thin film transistor ST in the next frame.

The light emitting element (ED) is provided in the light emitting area of the pixel area and emits light according to a data signal supplied from the pixel circuit (PC). As an example, the light emitting element (ED) includes a first electrode connected to the source electrode of the driving thin film transistor (DT), a second electrode connected to the second driving power source (VSS), and a light emitting layer provided between the first electrode and the second electrode. may include. Here, the light-emitting layer may include any one of an organic light-emitting layer, an inorganic light-emitting layer, and a quantum dot light-emitting layer, or may include a stacked or mixed structure of an organic light-emitting layer (or an inorganic light-emitting layer) and a quantum dot light-emitting layer.

In this way, one sub-pixel (PX) of the light-emitting display device according to an embodiment of the present specification is supplied to the light-emitting element (ED) according to the gate-source voltage of the driving thin film transistor (DT) according to the data voltage (Vdata). A predetermined image is displayed by controlling the data signal to cause the light emitting element (ED) to emit light.

FIG. 3 is a cross-sectional view showing the structure of the pixel shown in FIG. 1.

Referring to FIG. 3, the light emitting display device 100 according to an embodiment of the present specification includes a lower substrate 111, a buffer layer 113, a thin film transistor 130, a gate insulating layer 115, and a lower insulating layer 116. ), an upper insulating layer 117, an overcoat layer 119, a light emitting device layer 170, a bank 150, an encapsulation layer 180, and an upper substrate 195.

The lower substrate 111 may include a display area AA and a non-display area (not shown) around the display area AA. The display area AA may include a plurality of sub-pixels PX having an emitting area EA and a non-emitting area NEA. The sub-pixel (PX) may be composed of a thin film transistor 130 and a light emitting device layer 170 connected to the thin film transistor 130. The non-display area (not shown) may be a pad area.

The lower substrate 111 is made of glass, but may be made of a transparent plastic material that can be bent or bent, for example, polyimide. When using a plastic material as a material for the lower substrate 111, considering that a high temperature deposition process is performed on the lower substrate 111, polyimide with excellent heat resistance that can withstand high temperatures can be used.

The buffer layer 113 may be formed on the lower substrate 111. The buffer layer 113 serves to block materials contained in the lower substrate 111 from diffusing into the transistor layer during a high temperature process during the manufacturing process of the thin film transistor. Additionally, the buffer layer 113 serves to prevent external moisture or humidity from penetrating into the light emitting device. For example, the buffer layer 113 may include silicon oxide or silicon nitride. For example, the buffer layer 113 may have a structure in which silicon oxide films, silicon nitride films, or silicon oxide films and silicon nitride films are alternately stacked.

The thin film transistor 130 may be formed on the buffer layer 113. The thin film transistor 130 may include an active layer 131, a gate electrode 135, a source electrode 138S, and a drain electrode 138D.

The active layer 131 may be formed on the buffer layer 113. The active layer 131 may include a channel region 131C, a drain region 131D, and a source region 131S provided on both sides of the channel region 131C. That is, the active layer 131 may include a drain region 131D and a source region 131S that are conductive by the etching gas during the etching process of the gate insulating layer 115, and a channel region 131C that is not conductive. You can. In this case, the drain region 131D and the source region 131S may be arranged side by side and spaced apart from each other with the channel region 131C interposed. For example, the active layer 131 may be made of a semiconductor material made of any one of amorphous silicon, polycrystalline silicon, oxide, and organic material.

A light blocking layer (not shown) may be additionally provided between the lower substrate 111 and the active layer 131. The light blocking layer can minimize or prevent changes in the threshold voltage of the transistor due to external light by blocking light incident on the active layer 131 through the lower substrate 111. Optionally, the light blocking layer may be electrically connected to the source electrode 138S or the drain electrode 138D of the thin film transistor 130 to serve as a lower gate electrode of the thin film transistor. In this case, the light-induced change in characteristics may occur as well. In addition, changes in the threshold voltage of the transistor depending on the bias voltage can be minimized or prevented.

The gate insulating layer 115 may be formed on the channel region 131C of the active layer 131. The gate insulating layer 115 may be formed in an island shape only on the channel region 131C of the active layer 131, or on the front surface of the lower substrate 111 or the buffer layer 113 including the active layer 131. ) may be formed throughout.

The gate electrode 135 may be formed on the gate insulating layer 115 to overlap the channel region 131C of the active layer 131. The gate electrode 135 may serve as a mask to prevent the channel region 131C of the active layer 131 from becoming conductive by etching gas during the patterning process of the gate insulating layer 115 using an etching process. For example, the gate electrode 135 is made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). , or their alloys, and may be made of a single layer or two or more multi-layers of the metal or alloy.

The lower insulating layer 116 may be formed on the lower substrate 111. The lower insulating layer 116 may be disposed between the gate electrode 135, the source electrode 138S, and the drain electrode 138D. The lower insulating layer 116 may be formed on the drain region 131D and the source region 131S of the active layer 131 located at both ends of the gate electrode 135. For example, the lower insulating layer 116 may include an inorganic material such as silicon oxide (SiOx) or silicon nitride (SiNx). For example, the lower insulating layer 116 may be made of an organic material such as benzocyclobutene or photo acryl.

The source electrode 138S may be electrically connected to the source region 131S of the active layer 131. The drain electrode 138D may be electrically connected to the drain region 131D of the active layer 131. The source electrode 138S and the drain electrode 138D may be made of the same metal material. For example, the source electrode 138S and the drain electrode 138D are made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and neodymium (Nd). ), copper (Cu), or their alloys, etc., and may be composed of a single layer or two or more multi-layers of the metal or alloy.

The upper insulating layer 117 may be formed on the entire lower substrate 111 to cover the conductive wires 120, thin film transistor 130, and capacitor 140. The upper insulating layer 117 may protect the thin film transistor 130. The upper insulating layer 117 may cover the drain electrode 138D, the source electrode 138S, and the lower insulating layer 116 of the thin film transistor 130. For example, the upper insulating layer 119 may include an inorganic material such as silicon oxide (SiOx) or silicon nitride (SiNx).

The overcoat layer 119 may be formed on the lower substrate 111. The overcoat layer 119 may be formed on the upper insulating layer 117. The overcoat layer 119 may be formed on the thin film transistor 130. For example, the overcoat layer 119 may be composed of an organic film such as polyimide or acrylic resin.

The light emitting device layer 170 may be formed on the overcoat layer 119. The light emitting device layer 170 may include a first electrode 171, a light emitting layer 173, and a second electrode 172.

The first electrode 171 may be formed on the overcoat layer 119. The first electrode 171 may be connected to the source electrode 138S of the thin film transistor 130 through the first contact hole CH1. The first contact hole CH1 may be formed in the overcoat layer 119. For example, the first electrode 171 may be formed in a multi-layer structure including a transparent conductive film and an opaque conductive film with high reflection efficiency. The transparent conductive film is made of a material with a relatively high work function value such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO), and the opaque conductive film is made of aluminum (Al), silver (Ag), It may have a single-layer or multi-layer structure containing copper (Cu), lead (Pb), molybdenum (Mo), titanium (Ti), or alloys thereof.

The bank 150 may be formed on the overcoat layer 119 to cover one side and the other side of the first electrode 171 of each sub-pixel. The bank 150 may be a pixel defining layer that defines the emission area of each sub-pixel. For example, the bank 150 may be formed of an opaque material to prevent light interference between adjacent sub-pixels. In this case, the bank 150 may include a light-blocking material made of at least one of color pigment, organic black, and carbon.

The light emitting layer 173 may be formed on the first electrode 171. The light-emitting layer 173 may be formed by stacking a hole-related layer, an organic light-emitting layer, and an electron-related layer in that order or in the reverse order.

The second electrode 172 faces the first electrode 171 with the light emitting layer 173 interposed therebetween, and may be formed on the top and side surfaces of the light emitting layer 173. The second electrode 172 may be formed integrally with the entire active area. When applied to a top-emission organic light emitting display device, the second electrode 172 may be made of a transparent conductive film such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO).

The encapsulation layer 180 may be formed on the entire surface of the display area AA and a portion of the non-display area of the lower substrate 111. The encapsulation layer 180 is formed between the lower substrate 110 and the upper substrate 195 to prevent moisture and oxygen from penetrating into the interior of the display panel. The encapsulation layer 180 may have a stacked structure in which at least one inorganic layer and at least one organic layer are alternately arranged. Accordingly, an embodiment of the present specification can reduce the volume and thickness, and improve moisture permeability performance. For example, the inorganic layer may include an inorganic material such as silicon oxide (SiOx) or silicon nitride (SiNx). For example, the organic layer may include organic materials such as polymers, polyimides, and acrylic resins. The detailed configuration of this encapsulation layer 180 will be described later with reference to the drawings below.

The upper substrate 195 may be configured to face the lower substrate 111. The upper substrate 191 is made of glass, but may be made of a transparent plastic material that can be bent or bent, for example, polyimide. When using a plastic material as a material for the upper substrate 191, polyimide, which has excellent heat resistance and can withstand high temperatures, can be used, considering that a high temperature deposition process is performed on the upper substrate 191.

An adhesive layer 191 may be additionally formed between the encapsulation layer 180 and the upper substrate 195. The adhesive layer 191 is formed on the encapsulation layer 180 and can bond the lower substrate 111 and the upper substrate 195. For example, the adhesive layer 191 may be a heat-curing or natural-curing type adhesive containing a material such as barrier pressure sensitive adhesive (B-PSA), but is not limited thereto.

In the following description, only the changed components will be described in detail, the remaining components will be given the same reference numerals as in FIG. 3, and duplicate descriptions thereof will be omitted or briefly described.

Figure 4 is a cross-sectional view showing an encapsulation layer of a light emitting display device according to an embodiment of the present specification.

Referring to FIG. 4, the lower substrate 111 of the light emitting display device 100 according to an embodiment of the present specification may include a display area (AA) and a non-display area (NA) around the display area (AA). there is. The display area AA may include a plurality of sub-pixels PX. The non-display area (NA) may include a blocking structure 200 .

The blocking structure 200 may be constructed on the lower substrate 111 . The blocking structure 200 may be disposed along the perimeter of the non-display area (NA) of the lower substrate 111 to block the flow of the organic layers 182 and 184. For example, when a liquid organic material is applied to the lower substrate 111, the blocking structure 200 may block the organic material from flowing to a specific area of the lower substrate 111.

The blocking structure 200 may be configured to be spaced a predetermined distance from a bank disposed adjacent to the boundary between the display area AA and the non-display area NA in the outermost direction of the lower substrate 111 . For example, the blocking structure 200 may be referred to as a dam. For example, the blocking structure 200 may include an organic material such as polyimide or acrylic resin. For example, the height of the blocking structure 200 may be 2 to 3 micrometers (μm). However, it is not necessarily limited to this.

The blocking structure 200 may include a first structure 210 and a second structure 220 .

The first structure 210 may be disposed closer to the display area AA than the second structure 220. The first structure 210 may be formed in the non-display area (NA) between the pixel circuit (PX) and the second structure 220. The first structure 210 may block the flow of organic matter so that the first organic layer 182 is formed up to the first area A1 of the lower substrate 111. That is, the organic material for forming the first organic layer 182 can flow only to the first area A1 of the lower substrate 111 due to the first structure 210. Here, the first area A1 may be the upper front surface of the display area AA and an area between the display area AA and the first structure 210.

The first structure 210 may be in contact with the inorganic films 181 and 183, but may not be in contact with the organic films 182 and 184. For example, one side 210a of the first structure 210 adjacent to the display area AA may be in contact with the first inorganic layer 181. In this case, the upper surface 210b and the other side 210c extending from one side 210a of the first structure 210 may be in contact with the second inorganic layer 183. As another example, one side 210a of the first structure 210 adjacent to the display area AA and a portion of the upper surface 210b extending from the one side 210a may be in contact with the first inorganic film 181. . In this case, except for a portion of the top surface 210b of the first structure 210 that is in contact with the first inorganic film 181, the remaining portion and the other side surface 210c may be in contact with the second inorganic film 183. Accordingly, the first structure 210 may not be in contact with the first organic layer 182 and the second organic layer 184.

The second structure 220 may be spaced apart from the first structure 210. The second structure 220 may be disposed farther from the display area AA than the first structure 210 . The second structure 220 may block the flow of organic matter so that the second organic layer 184 is formed up to the second area A2 of the lower substrate 111. That is, the organic material for forming the second organic layer 184 can flow only to the second area A2 of the lower substrate 111 due to the second structure 220. Here, the second area A2 may be the upper front surface of the display area AA and an area between the display area AA and the second structure 220.

The second structure 220 may be in contact with the second inorganic layer 183 and may not be in contact with the second organic layer 184. For example, one side 220a of the second structure 220 adjacent to the display area AA may be in contact with the second inorganic layer 183. As another example, one side 220a of the second structure 220 adjacent to the display area AA and a portion of the upper surface 220b extending from the one side 220a may be in contact with the second inorganic film 183. . In this case, the first structure 210 may not be in contact with the second organic layer 184 formed on the second inorganic layer 183.

An embodiment of the present specification may block the flow of organic materials constituting the organic films 182 and 184 by providing the blocking structure 200 so that the organic materials each flow only to specific areas.

The encapsulation layer 180 may be formed in the display area (AA) and the non-display area (NA) of the lower substrate 111. The encapsulation layer 180 serves to prevent moisture and oxygen from penetrating into the interior from the outside. The encapsulation layer 180 may include inorganic films 181 and 183 and organic films 182 and 184.

The inorganic films 181 and 183 cover the sub-pixel PX disposed in the display area AA and may extend to the blocking structure 200 . The inorganic membranes 181 and 183 may extend to contact one side of the blocking structure 200. The organic films 182 and 184 cover the sub-pixels PX disposed in the display area AA and may be formed on the inorganic films 181 and 183. In this case, the ends of the inorganic layers 181 and 183 and the organic layers 182 and 184 may coincide with each other.

Specifically, the encapsulation layer 180 may include a first inorganic layer 181, a first organic layer 182, a second inorganic layer 183, and a second organic layer 184.

The first inorganic layer 181 may be formed on the lower substrate 111. The first inorganic layer 181 may extend to the first area A1 of the lower substrate 111. The first inorganic layer 181 covers the display area AA of the lower substrate 111 and may extend to the first structure 210 in the non-display area NA. The first inorganic film 181 may be configured to cover one side of the first structure 210. In this case, the outermost side 181a of the first inorganic layer 181 may be in contact with the second inorganic layer 183 formed on the first inorganic layer 181. Accordingly, an embodiment of the present specification can prevent oxygen and moisture from penetrating into the device through the side of the first inorganic layer 181. For example, the first inorganic layer 181 may include a silicon oxide layer (SiOx) or a silicon nitride layer (SiOx).

The first organic layer 182 may be formed on the first inorganic layer 181. The first organic layer 182 may extend to the first area A1 of the lower substrate 111 . The first organic layer 182 covers the display area AA of the lower substrate 111 and may extend to the first structure 210 in the non-display area NA. Here, the end of the first inorganic layer 181 and the end of the first organic layer 182 may coincide with each other. The end of the first inorganic layer 181 and the end of the first organic layer 182 may be disposed on the same line. Accordingly, the outermost side 181a of the first inorganic layer 181 may be exposed without being covered by the first organic layer 182. Accordingly, one embodiment of the present specification may be configured so that the second inorganic film 183 to be prepared later covers the outermost side 181a of the first inorganic film 181. Additionally, in one embodiment of the present specification, the first inorganic layer 183 can be etched without a separate mask process. For example, the first organic layer 182 may include a polymer material such as acrylic resin, epoxy resin, polyimide, or polyethylene, but is not limited thereto.

The second inorganic layer 183 may be formed on the first organic layer 182. The second inorganic layer 183 may extend to the second area A2 of the lower substrate 111. The second inorganic layer 183 covers the display area AA of the lower substrate 111 and may extend to the second structure 220 in the non-display area NA. The second inorganic film 183 may be configured to cover one side of the second structure 220. The second inorganic layer 183 may be configured to cover the outermost side 181a of the first inorganic layer 181. Accordingly, an embodiment of the present specification can prevent oxygen and moisture from penetrating into the device through the side of the first inorganic layer 181. For example, the second inorganic layer 183 may include a silicon oxide layer (SiOx) or a silicon nitride layer (SiOx).

The second organic layer 184 may be formed on the second inorganic layer 183. The second organic layer 184 may cover the second inorganic layer 183. The second organic layer 184 may extend to the second area A2 of the lower substrate 111. The second organic layer 184 covers the display area AA of the lower substrate 111 and may extend to the second structure 220 in the non-display area NA. Here, the end of the second inorganic layer 183 and the end of the second organic layer 184 may coincide with each other. The end of the second inorganic layer 183 and the end of the second organic layer 184 may be disposed on the same line. The side surface 183a of the second inorganic layer 183 may not be covered by the second organic layer 184. Accordingly, in one embodiment of the present specification, the second inorganic layer 183 can be etched without a separate mask process. For example, the second organic layer 184 may include a polymer material such as acrylic resin, epoxy resin, polyimide, or polyethylene, but is not limited thereto.

Through the above-described configuration, an embodiment of the present specification can reduce the volume and thickness of the light emitting display device and improve moisture permeability regardless of the substrate.

5A to 5H are cross-sectional views showing a method of manufacturing a light emitting display device according to an embodiment of the present specification. This relates to the manufacturing method of the light emitting display device of FIG. 4, and only different configurations are described below.

5A to 5H, the method of manufacturing a light emitting display device according to an embodiment of the present specification includes forming a sub-pixel (PX) on the lower substrate 111 and forming a blocking structure 200, and It may include forming an encapsulation layer 180 that covers the sub-pixel PX and has an inorganic layer 181 and 183 extending to the blocking structure 200 and an organic layer 182 and 184 on the inorganic layer. there is.

First, the sub-pixel PX may be formed in the display area AA of the lower substrate 111, and the blocking structure 200 may be formed in the non-display area NA of the lower substrate 111. The blocking structure 200 may be disposed around the non-display area NA to block the flow of the organic layers 182 and 184. The blocking structure 200 may include adjacent first structures 210 and second structures 220 spaced apart from each other by a predetermined distance.

The first structure 210 may be disposed between the second structure 220 and the display area AA. For example, the first structure 210 and the second structure 220 may be formed simultaneously using the same mask process. In this case, the first structure 210 and the second structure 220 may have the same height. As another example, the first structure 210 and the second structure 220 may be formed sequentially. In this case, the height of the second structure 220 may be equal to or higher than the height of the first structure 210. For example, when the second structure 220 is formed higher than the first structure 210, the organic material for forming the second organic layer 183 is used to prevent the organic material from exceeding the second area A2. The flow can be blocked more effectively.

Next, it may include laminating the first inorganic layer 181 on the entire surface of the lower substrate 111 on which the sub-pixel PX and the blocking structure 200 are formed. The first inorganic layer 181 may be formed on the sub-pixel PX and the blocking structure 200. The first inorganic layer 181 may be formed to cover the upper entire surface of the sub-pixel PX and the blocking structure 200. For example, the first inorganic layer 181 may be laminated using at least one of atomic layer deposition (ALD) and chemical vapor deposition (CVD).

Next, a step of forming a first organic layer 182 may be included. For example, the first organic layer 182 can be formed by applying an organic material constituting the first organic layer 182 on the first inorganic layer 181 and curing it. At this time, the organic material may be applied from the display area AA to the first area A1 by the first structure 210. For example, the first organic layer 182 may be applied using any one of ink-jet (Ink-jet), vacuum screen print (VSP), and organic deposition methods.

Next, a step of etching the first inorganic layer 181 using the first organic layer 182 as a mask may be included. For example, the first inorganic layer 181 may be etched using dry etching. The first organic layer 182 may function as a mask. Accordingly, the ends of the first inorganic layer 181 and the first organic layer 182 may be formed to coincide with each other. That is, the ends of the first inorganic layer 181 and the first organic layer 182 may be formed to be located on the same line. Accordingly, the outermost side 181a of the first inorganic layer 181 may be exposed without being covered by the first organic layer 182.

Accordingly, one embodiment of the present specification may be configured so that the second inorganic film 183 to be prepared later covers the outermost side 181a of the first inorganic film 181. Additionally, in one embodiment of the present specification, the first inorganic layer 181 is etched using the first organic layer 182 as a mask, thereby forming the first inorganic layer 183 without a separate mask process.

Next, a step of laminating a second inorganic layer 183 may be included. The second inorganic layer 183 may be laminated on the entire surface of the lower substrate 111. The second inorganic layer 183 may be formed to cover the upper entire surface of the sub-pixel PX and the blocking structure 200. The second inorganic layer 183 may be formed to cover the first inorganic layer 181. The side surface 181a of the first inorganic layer 181 may be covered by the second inorganic layer 183. Accordingly, an embodiment of the present specification can prevent oxygen and moisture from penetrating into the device through the side of the first inorganic layer 181. For example, the second inorganic layer 181 may be laminated using at least one of atomic layer deposition (ALD) and chemical vapor deposition (CVD).

Next, a step of forming a second organic layer 184 may be included. The second organic layer 184 may be formed on the second inorganic layer 183. For example, the second organic layer 184 can be formed by applying an organic material constituting the second organic layer 184 on the second inorganic layer 183 and curing it. At this time, the organic material may be applied from the display area AA to the second area A2 by the second structure 220. For example, the second organic layer 184 may be applied using any one of ink-jet (Ink-jet), vacuum screen print (VSP), and organic deposition methods.

Next, a step of etching the second inorganic layer using the second organic layer 184 as a mask may be included. For example, the second inorganic layer 184 may be etched using dry etching. In this case, the second organic layer 184 may serve as a mask. Accordingly, the ends of the second inorganic layer 183 and the second organic layer 184 may be formed to coincide with each other. That is, the ends of the second inorganic layer 183 and the second organic layer 184 may be formed to be located on the same line. Accordingly, in one embodiment of the present specification, the second inorganic layer 183 can be etched without a separate mask process.

Finally, the step may include applying an adhesive layer 191 on the second organic layer and adhering the upper substrate 111 to face the lower substrate 111.

By using the above-described manufacturing method, an embodiment of the present specification can reduce the volume and thickness of the light emitting display device and improve moisture permeability regardless of the substrate.

The light emitting display device according to the present specification can be applied to all electronic devices including a light emitting display panel and a gate driving circuit built into the light emitting display panel. For example, a light emitting display device according to the present specification may be used in a mobile device, a video phone, a smart watch, a watch phone, a wearable device, a foldable device, or a rollable device. (rollable device), bendable device, flexible device, curved device, electronic notebook, e-book, PMP (portable multimedia player), PDA (personal digital assistant), MP3 player , mobile medical devices, desktop PC, laptop PC, netbook computer, workstation, navigation, vehicle navigation, vehicle display device, television, wallpaper display device , It can be applied to shiny devices, gaming devices, laptops, monitors, cameras, camcorders, and home appliances.

The present specification described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the technical field to which this specification pertains that various substitutions, modifications, and changes are possible without departing from the technical spirit of the present specification. It will be clear to those who have the knowledge of. Therefore, the scope of the present specification is indicated by the claims described below, and all changes or modified forms derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present specification.

100: light emitting display device 103: gate driver
104: data driver 111: lower substrate
113: buffer layer 115: gate insulating layer
116: lower insulating layer 117: upper insulating layer
119: overcoat layer 130: thin film transistor
131: active layer 135: gate electrode
138: source electrode and drain electrode 150: bank
170: light emitting device layer 171: first electrode
172: second electrode 173: light emitting layer
180: Encapsulation layer 181: First inorganic layer
182: second inorganic membrane 183: third inorganic membrane
184: fourth inorganic film 191: adhesive layer
195: Upper substrate PX: Sub pixel

Claims (12)

A substrate including a display area and a non-display area around the display area;
a sub-pixel arranged in the display area;
a blocking structure disposed in the non-display area; and
An encapsulation layer covering the sub-pixel and having an inorganic layer extending to contact one side of the blocking structure and an organic layer on the inorganic layer,
The light emitting display device wherein the inorganic layer and the organic layer extend to the blocking structure. According to claim 1,
The blocking structure is,
a first structure adjacent to the display area; and
A light emitting display device comprising a second structure spaced apart from the first structure. According to claim 2,
The encapsulation layer is,
a first inorganic film covering a portion of the first structure;
a first organic layer on the first inorganic layer;
a second inorganic layer on the first organic layer and covering a portion of the second structure; and
A light emitting display device comprising a second organic layer covering the second inorganic layer. According to claim 3,
A light emitting display device, wherein ends of the first inorganic layer and the first organic layer coincide with each other, and ends of the second inorganic layer and the second organic layer coincide with each other. According to claim 3,
A side surface of the first inorganic layer is in contact with the second inorganic layer. forming a sub-pixel in a display area of the substrate and preparing a substrate with a blocking structure formed in a non-display area of the substrate; and
Forming an encapsulation layer covering the sub-pixel and having an inorganic layer extending to the blocking structure and an organic layer on the inorganic layer,
The method of manufacturing a light emitting display device, wherein the inorganic layer and the organic layer extend to the blocking structure. According to claim 6,
The step of forming the encapsulation layer is,
laminating a first inorganic layer on the entire surface of the substrate on which the sub-pixel and the blocking structure are formed;
forming a first organic layer on the first inorganic layer;
etching the first inorganic layer using the first organic layer as a mask;
Laminating a second inorganic layer on the front surface of the substrate;
forming a second organic layer on the second inorganic layer; and
A method of manufacturing a light emitting display device, comprising etching the second inorganic layer using the second organic layer as a mask. According to claim 7,
The blocking structure is,
a first structure adjacent to the display area; and
Comprising a second structure spaced apart from the first structure,
The first organic layer extends from the display area and is applied to contact one side of the first structure,
The method of manufacturing a light emitting display device, wherein the second organic layer extends from the display area and is applied to contact one side of the second structure. According to claim 8,
A method of manufacturing a light emitting display device, wherein ends of the first inorganic layer and the first organic layer coincide with each other, and ends of the second inorganic layer and the second organic layer coincide with each other. According to claim 7,
A method of manufacturing a light emitting display device, wherein a side surface of the first inorganic layer is in contact with the second inorganic layer. According to claim 7,
The first inorganic layer and the second inorganic layer are stacked using at least one of ALD (Atomic layer deposition) and CVD (Chemical vapor deposition). According to claim 7,
A method of manufacturing a light emitting display device, wherein the first organic layer and the second organic layer are applied using any one of ink-jet (Ink-jet), vacuum screen print (VSP), and organic deposition methods.

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