KR20240023463A - Transfer member manufacturing method, light emitting member manufacturing method, and display panel manufacturing method using the same - Google Patents

Abstract

Provided are a method for manufacturing a transfer member, a method for transferring a light emitting device, and a method for manufacturing a display panel. A method for manufacturing a transfer member comprises the steps of: preparing a ledger of a transfer member by sequentially stacking a protective film, a stamp layer, and a base layer on a support member; adsorbing one surface of a transfer head on the base layer and separating the ledger of the transfer member from the support member by lifting the transfer head in one direction; and generating a plurality of transfer members by cutting the ledger of the transfer member into a transfer unit size.

Description

Transfer member manufacturing method, light emitting element transfer method, and display panel manufacturing method {TRANSFER MEMBER MANUFACTURING METHOD, LIGHT EMITTING MEMBER MANUFACTURING METHOD, AND DISPLAY PANEL MANUFACTURING METHOD USING THE SAME}

The present invention relates to a method of manufacturing a transfer member, a method of transferring a light emitting element, and a method of manufacturing a display panel.

The importance of display devices is increasing with the development of multimedia. In response to this, various types of display devices such as Organic Light Emitting Display (OLED) and Liquid Crystal Display (LCD) are being used.

A device that displays images on a display device includes a display panel such as a light emitting display panel or a liquid crystal display panel. Among them, the light emitting display panel may include a light emitting diode (LED), which includes an organic light emitting diode using an organic material as a fluorescent material, or an inorganic light emitting diode using an inorganic material as a fluorescent material. .

Manufacturing a display panel using inorganic light emitting diodes includes growing micro LEDs on a substrate and transferring the grown micro LEDs to the display panel.

The problem to be solved by the present invention is to provide a method of manufacturing a transfer member to prevent contamination of the transfer member when manufacturing the transfer member, a method of transferring a light emitting device, and a method of manufacturing a display panel using the same.

The problems of the present invention are not limited to the problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the description below.

A method of manufacturing a transfer member according to an embodiment to solve the above problem includes preparing the original sheet of the transfer member by sequentially stacking a protective film, a stamp layer, and a base layer on a support member, and attaching one side of the transfer head to the base layer. adsorbing on the transfer head, lifting the transfer head in one direction to separate the main part of the transfer member from the support member, and cutting the main part of the transfer member into transfer unit sizes to create a plurality of transfer members. You can.

The base layer may be formed of ultra-thin glass or polymer, and the stamp layer may be formed of a material having adhesiveness or adhesiveness.

In the step of cutting into the transfer unit size to create a plurality of transfer members, the original copy of the transfer member may be cut into the transfer unit size by a mechanical cutting method or a laser cutting method, and the protective film may be removed.

The protective film may be formed of ultra-thin glass or polymer.

A light emitting device transfer method according to an embodiment to solve the above problem includes preparing a master copy of a transfer member on a support member, adsorbing a plurality of chucks disposed on one surface of a transfer head onto the transfer member, and transferring the transfer head. Lifting the head in one direction to separate the main body of the transfer member from the support member, cutting the main part of the transfer member into transfer unit sizes to create a plurality of transfer members, transfer members adsorbed to the plurality of chucks A step of contacting one surface of the upper surface of a plurality of light emitting devices aligned on a donor substrate, lifting the transfer head in one direction to separate the plurality of light emitting devices from the donor substrate, the plurality of light emitting devices and the plurality of light emitting devices Positioning a plurality of transfer members attached to an upper portion of a circuit board and lowering the plurality of chucks in another direction opposite to the one direction and detaching the plurality of chucks and the transfer member to transfer the light emitting element and the transfer member to the circuit board. It may include the step of transferring to a substrate.

The plurality of chucks may be individually actuable.

The step of preparing the ledger of the transfer member on the supporting member includes preparing the ledger of the transfer member by sequentially laminating a protective film, a stamp layer, and a base layer on the supporting member, wherein the base layer is made of ultra-thin glass or polymer. is formed, and the stamp layer may be formed of a material having adhesiveness or adhesiveness.

In the step of creating the plurality of transfer members, the original copy of the transfer member may be cut into transfer unit sizes using a mechanical cutting method or a laser cutting method, and the protective film may be removed.

The light emitting device may include an n-type semiconductor, an active layer, a p-type semiconductor, a first contact electrode, and a second contact electrode.

The circuit board may include flux applied to one surface. .

A method of manufacturing a display panel according to an embodiment to solve the above problem includes preparing a main sheet of a transfer member on a support member, adsorbing a plurality of chucks disposed on one surface of a transfer head onto the transfer member, and Lifting the transfer head in one direction to separate the main part of the transfer member from the support member, cutting the main part of the transfer member into transfer unit sizes to create a plurality of transfer members, the transfer member adsorbed on the plurality of chucks Contacting one surface of the member with the upper surface of the plurality of light-emitting devices aligned on the donor substrate, lifting the transfer head in one direction to separate the plurality of light-emitting devices from the donor substrate, the plurality of light-emitting devices and the plurality of light-emitting devices Positioning a plurality of transfer members attached to an upper portion of a circuit board, sequentially lowering the plurality of chucks in another direction opposite to the one direction and detaching the plurality of chucks and the transfer member to separate the light emitting element and the transfer member. Transferring to a circuit board, bonding the light emitting element to which the transfer member is attached on the circuit board, and removing the transfer head by peeling the transfer member from the light emitting element of the circuit board. You can.

The step of preparing the ledger of the transfer member on the supporting member includes preparing the ledger of the transfer member by sequentially laminating a protective film, a stamp layer, and a base layer on the supporting member, wherein the base layer is made of ultra-thin glass or polymer. is formed, and the stamp layer may be formed of a material having adhesiveness or adhesiveness.

In the step of creating the plurality of transfer members, the original copy of the transfer member may be cut into transfer unit sizes using a mechanical cutting method or a laser cutting method, and the protective film may be removed.

The circuit board may include flux applied to one surface.

After the step of peeling and removing the light emitting device from the circuit board, the flux may be removed from the circuit board using a flux cleaner.

The step of bonding the light-emitting device on the circuit board includes eutectic bonding, which involves melting and bonding the light-emitting device to the circuit board by irradiating a laser to a bonding electrode disposed at one end of the light-emitting device, and forming a solder ball between the light-emitting device and the circuit board. Either soldering bonding, which is bonded by melting, or ACF (anisotropic conductive film bonding) bonding, which is bonded by heating an anisotropic conductive film between the light emitting device and the circuit board, can be adopted.

The support member supports a plurality of transfer members, and each of the plurality of transfer members has the same transfer unit size as the transfer area on the circuit board to be transferred at one time.

According to a method of manufacturing a transfer member according to an embodiment, when cutting the circle of the transfer member, the base layer or stamp layer of the transfer member is contaminated by contaminants generated during cutting as cutting is performed from the protective film to the base film. can be prevented.

In addition, according to the method for transferring light emitting devices according to an embodiment, the transfer head includes a plurality of individually driveable chucks to transfer the light emitting devices, so that not only circuit boards for large display panels but also small display panels are used. It can also be efficiently used for transferring circuit boards for .

Effects according to the embodiments are not limited to the contents exemplified above, and further various effects are included in the present specification.

1 is a layout diagram showing a display device according to an exemplary embodiment.
FIG. 2 is an exemplary diagram showing an example of the pixel of FIG. 1 .
FIG. 3 is an exemplary diagram showing another example of the pixel of FIG. 1.
FIG. 4 is a cross-sectional view showing an example of a display panel cut along line A-A' of FIG. 2 .
Figure 5 is a flowchart showing a method of manufacturing a display panel according to an embodiment.
FIG. 6 is a flowchart showing a method of manufacturing the transfer member of FIG. 5.
Figure 7 is a cross-sectional view of the original portion of the transfer member disposed on the support member.
Figure 8 is a perspective view of the transfer head.
9 is a schematic diagram explaining the creation of a transfer member.
Figure 10 is a schematic diagram explaining peeling of the protective film of the transfer member.
FIG. 6 is a flowchart showing a method of manufacturing the transfer member of FIG. 5.
Figure 7 is a cross-sectional view of the original portion of the transfer member disposed on the support member.
Figure 8 is a perspective view of the transfer head.
Figure 9 is a schematic diagram illustrating the pickup of the original copy of the transfer member.
Figure 10 is a schematic diagram explaining the creation of a transfer member.
Figure 11 is a schematic diagram explaining peeling of the protective film of the transfer member.
FIG. 12 is a flowchart showing a method of transferring the light emitting device of FIG. 5 to a circuit board.
13 and 14 are schematic diagrams explaining a method of picking up a light emitting element by a transfer member.
15 and 16 are schematic diagrams explaining a method of transferring a light emitting element onto a circuit board.
17 and 18 are schematic diagrams illustrating a method of transferring a light emitting device onto a circuit board according to another modified example.
Figure 19 is a flowchart showing a method of bonding a light emitting device to a circuit board.
Figure 20 is a schematic diagram explaining laser bonding of a light emitting element.
Figure 21 is an enlarged view of portion A of Figure 20.
FIG. 22 is a schematic diagram explaining a method of peeling a transfer member from a circuit board, and FIG. 23 is a schematic diagram explaining a method of cleaning flux from a circuit board.
Figure 24 is a schematic diagram explaining a method of transferring a light emitting device onto a circuit board according to an embodiment.
Figure 25 is a schematic diagram explaining a method of transferring a light emitting device onto a circuit board according to another embodiment.

The advantages and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various different forms. The present embodiments only serve to ensure that the disclosure of the present invention is complete and that common knowledge in the technical field to which the present invention pertains is not limited. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

When an element or layer is referred to as “on” another element or layer, it includes all cases where the other element or layer is directly on top of or interposed between the other element and the other element. Like reference numerals refer to like elements throughout the specification. The shape, size, ratio, angle, number, etc. disclosed in the drawings for explaining the embodiments are illustrative and the present invention is not limited to the details shown.

Hereinafter, specific embodiments will be described with reference to the attached drawings.

1 is a layout diagram showing a display device according to an exemplary embodiment. FIG. 2 is an exemplary diagram showing an example of the pixel of FIG. 1 . FIG. 3 is an exemplary diagram showing another example of the pixel of FIG. 1.

1 to 3, the display device is a device that displays moving images or still images, and includes mobile phones, smart phones, tablet personal computers, and smart watches. ), watch phones, mobile communication terminals, electronic notebooks, e-books, PMP (portable multimedia players), navigation, UMPC (Ultra Mobile PC), as well as portable electronic devices such as televisions, laptops, monitors, billboards, etc. It can be used as a display screen for various products such as the Internet of Things (IOT).

The display panel 100 may be formed as a rectangular plane having a long side in the first direction DR1 and a short side in the second direction DR2 that intersects the first direction DR1. A corner where the long side in the first direction DR1 and the short side in the second direction DR2 meet may be rounded to have a predetermined curvature or may be formed at a right angle. The planar shape of the display panel 100 is not limited to a square, and may be formed in other polygonal, circular, or oval shapes. The display panel 100 may be formed flat, but is not limited thereto. For example, the display panel 100 is formed at left and right ends and may include curved portions with a constant curvature or a changing curvature. In addition, the display panel 100 may be flexibly formed to be bent, curved, bent, folded, or rolled.

The display panel 100 may further include pixels PX to display an image, scan lines extending in the first direction DR1, and data lines extending in the second direction DR2. The pixels PX may be arranged in a matrix form in the first direction DR1 and the second direction DR2.

Each of the pixels PX may include a plurality of sub-pixels RP, GP, and BP, as shown in FIGS. 2 and 3 . 2 and 3, each of the pixels PX includes three sub-pixels (RP, GP, BP), that is, a first sub-pixel (RP), a second sub-pixel (GP), and a third sub-pixel (BP). ), but the embodiments of the present specification are not limited thereto.

The first sub-pixel (RP), the second sub-pixel (GP), and the third sub-pixel (BP) may be connected to one of the data lines and to at least one of the scan lines.

Each of the first sub-pixel (RP), the second sub-pixel (GP), and the third sub-pixel (BP) may have a rectangular, square, or diamond planar shape. For example, the first sub-pixel (RP), the second sub-pixel (GP), and the third sub-pixel (BP) each have a short side in the first direction (DR1) and a short side in the second direction (DR2) as shown in FIG. It may have a rectangular plan shape with long sides. Alternatively, each of the first sub-pixel (RP), the second sub-pixel (GP), and the third sub-pixel (BP) has the same length in the first direction (DR1) and the second direction (DR2) as shown in FIG. 3. It may have a square or rhombus planar shape including the sides.

As shown in FIG. 2 , the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP may be arranged in the first direction DR1. Alternatively, one of the second sub-pixel GP and the third sub-pixel BP and the first sub-pixel RP are arranged in the first direction DR1, and the other one and the first sub-pixel RP are arranged in the first direction DR1. It may be arranged in the second direction DR2. For example, as shown in FIG. 3, the first sub-pixel (RP) and the second sub-pixel (GP) are arranged in the first direction (DR1), and the first sub-pixel (RP) and the third sub-pixel (BP) may be arranged in the second direction DR2.

Alternatively, one of the first sub-pixel RP and the third sub-pixel BP and the second sub-pixel GP are arranged in the first direction DR1, and the other one and the second sub-pixel GP are arranged in the first direction DR1. It may be arranged in the second direction DR2. Alternatively, one of the first sub-pixel RP and the second sub-pixel GP and the third sub-pixel BP are arranged in the first direction DR1, and the other one and the third sub-pixel BP are arranged in the first direction DR1. It may be arranged in the second direction DR2.

The first sub-pixel (RP) includes a first light-emitting device that emits first light, the second sub-pixel (GP) includes a second light-emitting device that emits second light, and the third sub-pixel (BP) ) may include a third light-emitting device that emits third light. Here, the first light may be light in a red wavelength band, the second light may be light in a green wavelength band, and the third light may be light in a blue wavelength band. The red wavelength band is a wavelength band of approximately 600 nm to 750 nm, the green wavelength band is a wavelength band of approximately 480 nm to 560 nm, and the blue wavelength band may be a wavelength band of approximately 370 nm to 460 nm, but in the present specification The examples are not limited thereto.

Each of the first sub-pixel (RP), the second sub-pixel (GP), and the third sub-pixel (BP) may include an inorganic light-emitting device that emits light and includes an inorganic semiconductor. For example, the inorganic light emitting device may be a flip chip type micro LED (Light Emitting Diode), but embodiments of the present specification are not limited thereto.

2 and 3, the area of the first sub-pixel (RP), the area of the second sub-pixel (GP), and the area of the third sub-pixel (BP) may be substantially the same, but in the embodiment of the present specification is not limited to this. At least one of the area of the first sub-pixel (RP), the area of the second sub-pixel (GP), and the area of the third sub-pixel (BP) may be different from the other one. Alternatively, among the area of the first sub-pixel (RP), the area of the second sub-pixel (GP), and the area of the third sub-pixel (BP), any two may be substantially the same and the other may be different from the above two. You can. Alternatively, the area of the first sub-pixel (RP), the area of the second sub-pixel (GP), and the area of the third sub-pixel (BP) may be different from each other.

FIG. 4 is a cross-sectional view showing an example of a display panel cut along line A-A' of FIG. 2 .

Referring to FIG. 4 , the display panel 100 may include a thin film transistor layer (TFTL) and light emitting elements (LE) disposed on a substrate (SUB). The thin film transistor layer (TFTL) may be a layer in which thin film transistors (Thin Film Transistors, TFTs) are formed.

The thin film transistor layer (TFTL) includes an active layer (ACT), a first gate layer (GTL1), a second gate layer (GTL2), a first data metal layer (DTL1), a second data metal layer (DTL2), and a third data metal layer ( DTL3), and a fourth data metal layer (DTL4). In addition, the thin film transistor layer (TFTL) includes a buffer film (BF), a gate insulating film 130, a first interlayer insulating film 141, a second interlayer insulating film 142, a first planarization film 160, and a first insulating film 161. ), a second planarization film 180, and a second insulating film 181.

The substrate SUB may be a base substrate or base member for supporting the display device. The substrate (SUB) may be a rigid substrate made of glass, but the embodiments of the present specification are not limited thereto. The substrate (SUB) may be a flexible substrate capable of bending, folding, rolling, etc. In this case, the substrate (SUB) may include an insulating material such as a polymer resin such as polyimide (PI).

A buffer film (BF) may be disposed on one surface of the substrate (SUB). The buffer film (BF) may be a film to prevent penetration of air or moisture. The buffer film BF may be composed of a plurality of inorganic films stacked alternately. For example, the buffer film BF may be formed as a multilayer in which one or more inorganic layers selected from the group consisting of a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked. The buffer film (BF) may be omitted.

An active layer (ACT) may be disposed on the buffer film (BF). The active layer (ACT) may include a silicon semiconductor such as polycrystalline silicon, single crystalline silicon, low-temperature polycrystalline silicon, and amorphous silicon, or may include an oxide semiconductor.

The active layer (ACT) may include a channel (TCH), a first electrode (TS), and a second electrode (TD) of a thin film transistor (TFT). The channel TCH of the thin film transistor TFT may be an area that overlaps the gate electrode TG of the thin film transistor TFT in the third direction DR3, which is the thickness direction of the substrate SUB. The first electrode TS of the thin film transistor TFT may be disposed on one side of the channel TCH, and the second electrode TD may be disposed on the other side of the channel TCH. The first electrode TS and the second electrode TD of the thin film transistor TFT may be areas that do not overlap the gate electrode TG in the third direction DR3. The first electrode (TS) and the second electrode (TD) of the thin film transistor (TFT) may be conductive regions in which silicon semiconductors or oxide semiconductors are doped with ions.

A gate insulating layer 130 may be disposed on the active layer (ACT). The gate insulating layer 130 may be formed of an inorganic layer, for example, a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

A first gate layer (GTL1) may be disposed on the gate insulating layer 130. The first gate layer (GTL1) may include the gate electrode (TG) of the thin film transistor (TFT) and the first capacitor electrode (CAE1). The first gate layer (GTL1) is made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Alternatively, it may be formed as a single layer or multiple layers made of alloys thereof.

A first interlayer insulating layer 141 may be disposed on the first gate layer (GTL1). The first interlayer insulating layer 141 may be formed of an inorganic layer, for example, a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

A second gate layer (GTL2) may be disposed on the first interlayer insulating film 141. The second gate layer (GTL2) may include a second capacitor electrode (CAE2). The second gate layer (GTL2) is made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Alternatively, it may be formed as a single layer or multiple layers made of alloys thereof.

A second interlayer insulating film 142 may be disposed on the second gate layer (GTL2). The second interlayer insulating layer 142 may be formed of an inorganic layer, for example, a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

A first data metal layer (DTL1) including a first connection electrode (CE1), a first sub-pad (SPD1), and a data line (DL) may be disposed on the second interlayer insulating film 142. The data line DL may be formed integrally with the first sub pad SPD1, but the embodiment of the present specification is not limited thereto. The first data metal layer (DTL1) is made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Alternatively, it may be formed as a single layer or multiple layers made of alloys thereof.

The first connection electrode (CE1) is connected to the first electrode (TS) or the second electrode of the thin film transistor (TFT) through the first contact hole (CT1) penetrating the first interlayer insulating film 141 and the second interlayer insulating film 142. It can be connected to the electrode (TD).

A first planarization film is formed on the first data metal layer (DTL1) to flatten the steps caused by the active layer (ACT), the first gate layer (GTL1), the second gate layer (GTL2), and the first data metal layer (DTL1). (160) can be arranged. The first planarization film 160 is formed of an organic film such as acryl resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin. It can be.

A second data metal layer (DTL2) may be disposed on the first planarization film 160. The second data metal layer DTL2 may include a second connection electrode CE2 and a second sub pad PD2. The second connection electrode CE2 may be connected to the first connection electrode CE1 through the second contact hole CT2 penetrating the first insulating film 161 and the first planarization film 160. The second data metal layer (DTL2) is made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Alternatively, it may be formed as a single layer or multiple layers made of alloys thereof.

A second planarization film 180 may be disposed on the second data metal layer DTL2. The second planarization film 180 is formed of an organic film such as acryl resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin. It can be.

A third data metal layer (DTL3) may be disposed on the second planarization film 180. The third data metal layer (DTL3) may include a third connection electrode (CE3) and a third sub-pad (SPD3). The third connection electrode CE3 may be connected to the second connection electrode CE2 through the third contact hole CT3 penetrating the second insulating film 181 and the second planarization film 180. The third data metal layer (DTL3) is made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Alternatively, it may be formed as a single layer or multiple layers made of alloys thereof.

A third planarization film 190 may be disposed on the third data metal layer DTL3. The third planarization film 190 is formed of an organic film such as acryl resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin. It can be.

A fourth data metal layer (DTL4) may be disposed on the third planarization film 190. The fourth data metal layer DTL4 may include an anode pad electrode (APD), a cathode pad electrode (CPD), and a fourth sub pad (SPD). The anode pad electrode (APD) may be connected to the third connection electrode (CE3) through the fourth contact hole (CT4) penetrating the third insulating film 191 and the third planarization film 190. The cathode pad electrode (CPD) may be supplied with a first power voltage that is a low potential voltage. The fourth data metal layer (DTL4) is any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Alternatively, it may be formed as a single layer or multiple layers made of alloys thereof.

On each of the anode pad electrode (APD) and cathode pad electrode (CPD), a transparent conductive layer (TCO) and a fifth contact electrode are formed to increase adhesion to the first contact electrode (CTE1) and the second contact electrode (CTE2) of the light emitting element (LE). A sub pad (SPD5) may be disposed. The transparent conductive layer (TCO) and the fifth sub pad (SPD5) may be formed of a transparent conductive oxide such as indium tin oxide (ITO) and indium zinc oxide (IZO).

A protective film (PVX) may be disposed on the anode pad electrode (APD), the cathode pad electrode (CPD), and the first pad (PD1). The protective film PVX may be disposed to cover the edges of the anode pad electrode APD, the cathode pad electrode CPD, and the first pad PD1. The protective film (PVX) may be formed of an inorganic film, for example, a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

The light emitting device (LE) is illustrated as a flip chip type micro LED in which the first contact electrode (CTE1) and the second contact electrode (CTE2) are arranged to face the anode pad electrode (APD) and the cathode pad electrode (CPD). , but is not limited to this. The light emitting device (LE) may be an inorganic light emitting device made of an inorganic material such as GaN. The light emitting device LE may have a length of several to hundreds of μm in the first direction DR1, a length in the second direction DR2, and a length in the third direction DR3, respectively. For example, the length of the light emitting device LE in the first direction DR1, the length in the second direction DR2, and the length in the third direction DR3 may each be approximately 100 μm or less.

Light emitting elements (LE) may be formed by growing on a semiconductor substrate such as a silicon wafer. Each of the light emitting elements (LE) can be directly transferred from the silicon wafer onto the anode pad electrode (APD) and cathode pad electrode (CPD) of the substrate (SUB). In this case, the first contact electrode (CTE1) and the anode pad electrode (APD) may be bonded to each other through a bonding process. Additionally, the second contact electrode (CTE2) and the cathode pad electrode (CPD) may be bonded to each other through a bonding process. The first contact electrode (CTE1) and the anode pad electrode (APD) may be electrically connected to each other through the bonding electrode 23. Additionally, the second contact electrode (CTE2) and the cathode pad electrode (CPD) may be electrically connected to each other through the bonding electrode 23.

For example, a bonding electrode 23 may be disposed on one surface of the light emitting element LE. The bonding electrode 23 may be a bonded product of pressure melt bonding using a laser. Here, in pressurized melt bonding, the bonding electrode 23 receives heat and melts to melt and mix the light emitting element (LE), anode pad electrode (APD), and cathode pad electrode (CPD), and cools as laser supply ends. It refers to a solidified state. Even though it is cooled and solidified in the melted mixed state, the conductivity of the light emitting element (LE), anode pad electrode (APD), and cathode pad electrode (CPD) is maintained, so the anode pad electrode (APD) and cathode pad electrode (CPD) Each light emitting element (LE) can be electrically and physically connected. Accordingly, the bonding electrode 23 may be disposed on the first contact electrode (CTE1) and the second contact electrode (CTE2) of the light emitting element (LE).

The bonding electrode 23 may include, for example, Au, AuSn, PdIn, InSn, NiSn, Au-Au, AgIn, AgSn, Al, Ag, or carbon nanotubes (CNT). These may be used individually or in combination of two or more. Depending on the type of the bonding electrode 23, the bonding electrode 23 may be formed by depositing on the pad electrode or may be formed on the pad electrode through various methods such as screen printing.

Alternatively, each of the light emitting elements LE may be transferred onto the anode pad electrode APD and the cathode pad electrode CPD of the substrate SUB using a transfer member. This will be described later with reference to FIGS. 5 to 25.

Each of the light emitting elements (LE) includes a base substrate (SSUB), an n-type semiconductor (NSEM), an active layer (MQW), a p-type semiconductor (PSEM), a first contact electrode (CTE1), and a second contact electrode (CTE2). It may be a light-emitting structure.

The base substrate (SSUB) may be a sapphire substrate, but embodiments of the present specification are not limited thereto.

The n-type semiconductor (NSEM) may be disposed on one side of the base substrate (SSUB). For example, an n-type semiconductor (NSEM) may be disposed on the lower surface of the base substrate (SSUB). An n-type semiconductor (NSEM) may be made of GaN doped with an n-type conductive dopant such as Si, Ge, or Sn.

The active layer (MQW) may be disposed on a portion of one side of the n-type semiconductor (NSEM). The active layer (MQW) may include a material with a single or multiple quantum well structure. When the active layer (MQW) includes a material with a multi-quantum well structure, it may have a structure in which a plurality of well layers and barrier layers are alternately stacked. At this time, the well layer may be formed of InGaN, and the barrier layer may be formed of GaN or AlGaN, but are not limited thereto. Alternatively, the active layer (MQW) may be a structure in which a type of semiconductor material with a large band gap energy and a semiconductor material with a small band gap energy are alternately stacked, and other types of semiconductor materials from group 3 to 3 depending on the wavelength of the emitted light. It may also contain Group 5 semiconductor materials.

Figure 5 is a flowchart showing a method of manufacturing a display panel according to an embodiment.

Referring to FIG. 5, the method of manufacturing a display panel includes manufacturing a transfer member (S100), transferring the light emitting element of the donor substrate to a circuit board using the transfer member (S200), and transferring the transferred light emitting element to the circuit board. It may include a bonding step (S300).

FIG. 6 is a flow chart showing the manufacturing method of the transfer member of FIG. 5, FIG. 7 is a cross-sectional view of the original of the transfer member disposed on the support member, FIG. 8 is a perspective view of the transfer head, and FIG. 9 is a schematic of the original of the transfer member. This is a schematic diagram explaining the pickup, and Figure 10 is a schematic diagram explaining the creation of the transfer member. Figure 11 is a schematic diagram explaining peeling of the protective film of the transfer member.

Hereinafter, a method of manufacturing the transfer member will be described with reference to FIGS. 6 to 11.

More specifically, a primary 21-B of the transfer member to which the protective film 30-B, the stamp layer 220, and the base layer 210 are attached is prepared on the support member Sta (see Figure 6). Step S110).

Referring to FIG. 7, the protective film 30-B includes one side and the other side. When the protective film (30-B) is placed on the support member (Sta), one side of the protective film (30-B) becomes the side that the support member (Sta) contacts, and the other side of the protective film (30-B) becomes the surface in contact with the stamp layer 220.

The protective film 30-B may include, for example, glass or plastic. When the protective film 30-B includes thin glass, the glass may be ultra-thin glass.

The stamp layer 220 includes one side and the other side. When the original sheets of the transfer members 21-B and 30-B are placed on this support member Sta, one side of the stamp layer 220 becomes a side in contact with the other side of the protective film 30-B, The other side of the stamp layer 220 is in contact with the base layer 210. When the transfer members 21-B and 30-B later transfer the light-emitting device, the protective film 30-B in contact with one surface of the stamp layer 220 is peeled off, and the light-emitting device is contacted. This will be described later with reference to FIG. 13.

The stamp layer 220 may be made of an adhesive material, for example, OCA (Optical Clear Adhesive), PSA (Pressure Sensitive Adhesive), etc., but is not limited thereto. As another example, the stamp layer 220 may be made of an adhesive material, for example, an acrylic, urethane, or silicone adhesive material.

The adhesiveness of one side of the stamp layer 220 may be weaker than that of the other side. That is, the adhesiveness between the stamp layer 220 and the protective film 30-B or the stamp layer 220 and the light emitting device is weaker than the adhesiveness between the stamp layer 220 and the base layer 210.

The base layer 210 includes one side and the other side. When the first sheet of the transfer member (21-B, 30-B) is placed on this support member (Sta), one side of the base layer 210 becomes a side that is adhered to the stamp layer 220 and the base layer 210 The other side is exposed.

The base layer 210 may include, for example, glass or plastic. The base layer 210 is made of polyethylene terephthalate (PET), polyurethane (PU), polyimide (PI), polycarbonate (PC), polyethylene (PE), polypropylene (PP), polysulfone (PSF), and polymethyl It may be made of methacrylate (PMMA), triacetylcellulose (TAC), cycloolefin polymer (COP), etc.

Referring to FIGS. 8 and 9, the transfer head 40 may pick up the originals 21-B and 30-B of the transfer member disposed on the support member Sta. (Step S120 in FIG. 6)

The transfer head 40 is composed of a body 40-B to support the transfer member, is movable in the vertical direction through the body 40-B, and includes a plurality of chucks 41 to adsorb the upper surface of the transfer member. , may include vertical driving units 41-D for moving the plurality of chucks 41 in the vertical direction. The plurality of chucks 41 may be any one of an electrostatic chuck, an adhesive chuck, a vacuum chuck, and a porous vacuum chuck.

For example, when the plurality of chucks 41 are vacuum chucks, the body 40-B may be provided with openings 40-H into which the plurality of chucks 41 are inserted. The vertical driving units 41-D individually drive the plurality of chucks 41 so that each of the chucks 41 can move individually in the vertical direction.

The body 40-B of the transfer head 40 is located on the main body of the transfer member 21-B of the support member Sta, and drives the vertical driving units 41-D to move the plurality of chucks 41. The transfer member 21-B is lowered until it contacts the base layer 210, and the upper surface of the transfer member 21-B, that is, the base layer 210, is vacuum adsorbed on the plurality of chucks 41. The chuck 41 can be raised. As a result, as shown in FIG. 9, the transfer member 20-B is separated from the support member Sta by the transfer head 40, and the other surface of the protective film 30-B is exposed.

Next, the master 21-B of the transfer member is cut into transfer unit sizes to create a plurality of transfer members 21 (step S130 in FIG. 6).

As shown in FIG. 10, the cutter is positioned to face the protective film 30-B, and the original copy of the transfer member is cut into transfer unit sizes. As a result, each of the plurality of chucks 41 can hold one transfer member 21. The transfer unit size refers to the size transferred to the circuit board at one time. Here, the cutter may use a conventionally known cutting method such as a mechanical cutting method or a laser cutting method.

Next, as shown in FIG. 11, the protective film 30 of each transfer member 21 can be peeled. As a result, one side of the stamp layer 220 having adhesiveness or adhesion may be exposed.

As described with reference to FIGS. 6 to 11, according to one embodiment, when cutting the transfer member while attaching the main body 21-B of the transfer member to the chuck 41, cutting occurs. The base layer 210 or the stamp layer 220 of the transfer member 21 is not contaminated by contaminants (fume). If the base layer 210 or the stamp layer 220 of the transfer member 21 is contaminated, the adsorption force may be applied differently to the contaminated and uncontaminated portions during deposition of the light emitting device, which will be described later, and defects in the light emitting device may occur. .

FIG. 12 is a flowchart showing a method of transferring the light emitting device of FIG. 5 to a circuit board, FIGS. 13 and 14 are schematic diagrams explaining a method of picking up the light emitting device by a transfer member, and FIGS. 15 and 16 are circuit boards. This is a schematic diagram explaining a method of transferring a light-emitting element onto an image.

Hereinafter, a method of manufacturing the transfer member will be described with reference to FIGS. 12 to 16.

12 and 13, one surface of the transfer member 21 adsorbed on the plurality of chucks 41 of the transfer head 40 is placed on the upper surface of the plurality of light emitting elements LE aligned on the donor substrate Ds. Contact (step S210 in FIG. 12).

Referring to FIG. 13 , a plurality of light emitting elements LE may be aligned on the donor substrate Ds. The donor substrate Ds may be a growth substrate on which the light emitting element LE is grown, or may be a temporary substrate transferred from the growth substrate. The light emitting device LE arranged on the donor substrate Ds may include a plurality of red, green, and blue light emitting devices. If multiple light emitting elements (LE) are arranged in at least one row for each color, the pitch between each adjacent column may be set to be the same, and if multiple light emitting elements (LE) are arranged in at least one row for each color, the pitch between each adjacent column may be set to be the same. The pitch between columns can be set to be the same.

Meanwhile, an adhesive material may be applied to the donor substrate Ds. Accordingly, the donor substrate Ds and the plurality of light emitting elements LE may be adhered to each other. The adhesion between the donor substrate Ds and the plurality of light emitting elements LE must be smaller than the adhesion or adhesion of the transfer member 21.

Next, the transfer head 40 is lifted in one direction to separate the plurality of light emitting elements LE from the donor substrate Ds (step S220 in FIG. 12).

Referring to FIG. 14, after the transfer member 21 and the light emitting elements LE are adhered or adhered to each other, when the transfer head 40 is lifted in the vertical direction, the donor substrate Ds and the plurality of light emitting elements LE are Since the adhesive force or adhesion between the transfer member 21 and the light emitting element LE is higher than the adhesiveness of the image, the light emitting element LE is detached from the donor substrate Ds and moved in the vertical direction along the transfer head 40.

Referring again to FIG. 12 , the plurality of light emitting elements LE and the plurality of transfer members 21 attached to the plurality of light emitting elements LE are positioned on the circuit board 10 . (Step S230) After this, the plurality of chucks 41 of the transfer head 40 are sequentially lowered downward to align the light emitting element LE with the circuit board 10, and the plurality of chucks 41 and the transfer member ( 21) is detached and the light emitting element LE is transferred to the circuit board 10 (step S240).

The circuit board 10 may include flux applied to one side. Flux may be a material that facilitates bonding between the circuit board 10 and a bonding electrode to be described later in a pressure melting process using a laser. The flux 24 may be oil-soluble or water-soluble and may include natural or synthetic rosin. Flux 24 may be in liquid form or gel form.

The flux 24 may preferably be applied at a thickness lower than that of the light emitting element LE, which will be described later. However, due to the arrangement of the light emitting element LE, etc., the thickness of the flux 24 in some areas may be less than that of the light emitting element LE. It can be the same as the height of or thicker.

Referring to Figures 15 and 16, the plurality of chucks 41 of the transfer head 40 can be driven individually.

For example, the plurality of chucks 41 may include a first chuck 41-a, a second chuck 41-b, a third chuck 41-c, and a fourth chuck 41-d. there is. In one embodiment, for convenience of explanation, the plurality of chucks 41 include four chucks, but the chucks are not limited to this and the number of chucks can be varied.)

The first chuck 41-a is lowered first to place the first group of light emitting elements LE-1G on the circuit board 10. Afterwards, the first chuck 41-a detaches the adsorbed transfer member 21 and rises to its original position.

Next, the second chuck 41-b arranges the second group of light emitting elements LE-2G on the circuit board 10. Afterwards, the second chuck 41-b detaches the adsorbed transfer member 21 and rises to its original position.

In this way, the third chuck 41-c arranges the third group of light emitting elements LE-3G on the circuit board 10. Afterwards, the third chuck 41-c detaches the adsorbed transfer member 21 and rises to its original position.

Finally, the fourth chuck 41-d arranges the fourth group of light emitting elements LE-4G on the circuit board 10. Afterwards, the fourth chuck 41-d detaches the adsorbed transfer member 21 and rises to its original position.

At this time, a camera member (not shown) may be further disposed to align the transfer member 21 and the light emitting element LE. Multiple cameras may be included for accurate alignment. For example, a camera may be placed below the circuit board 10 and above the transfer head 40.

17 and 18 are schematic diagrams illustrating a method of transferring a light emitting device onto a circuit board according to another modified example.

17 to 18, the transfer head 40 is installed on the upper part of the circuit board 10 with one of the plurality of chucks 41, for example, the first chuck 41-a, lowered. It can be positioned. In this case, it may be easier to align on the circuit board 10 based on the lowered chuck. After positioning the first chuck 41-a on the circuit board 10, the transfer head 40 arranges the first group of light emitting elements LE-1G on the circuit board 10, and places the first group of light emitting elements LE-1G on the circuit board 10. The chuck 41-a detaches the adsorbed transfer member 21 and rises to return it to its original position.

Next, the second chuck 41-b arranges the second group of light emitting elements LE-2G on the circuit board 10. Thereafter, the second chuck 41-b detaches the adsorbed transfer member 21 and rises to return to its original position.

In this way, the third chuck 41-c arranges the third group of light emitting elements LE-3G on the circuit board 10. Thereafter, the third chuck 41-c detaches the adsorbed transfer member 21 and rises to return to its original position.

Finally, the fourth chuck 41-d arranges the fourth group of light emitting elements LE-4G on the circuit board 10. Thereafter, the fourth chuck 41-d detaches the adsorbed transfer member 21 and rises to return it to its original position.

FIG. 19 is a flowchart showing a method of bonding a light-emitting device to a circuit board, FIG. 20 is a schematic diagram explaining laser bonding of a light-emitting device, and FIG. 21 is an enlarged view of portion A of FIG. 20. FIG. 22 is a schematic diagram explaining a method of peeling a transfer member from a circuit board, and FIG. 23 is a schematic diagram explaining a method of cleaning flux from a circuit board.

Since the transfer head includes a plurality of individually driveable chucks to transfer light emitting elements, it can be efficiently used not only for transferring circuit boards for large display panels, but also for transferring circuit boards for small display panels.

Hereinafter, a method of manufacturing a display panel will be described with reference to FIGS. 19 to 23.

A plurality of light emitting elements LE to which a plurality of transfer members 21 are attached are bonded on a circuit board (step S310 in FIG. 19).

20 and 21, a light emitting element (LE) to be bonded is disposed on the circuit board 10, and a bonding electrode 23 is formed on one surface of the light emitting element (LE) in contact with the circuit board 10. It is placed. The transfer member 21 is disposed on the other surface of the light emitting element LE, so that the circuit, the light emitting element LE, and the transfer member 21 overlap each other. A laser transmission member 8 may be disposed on the transfer member 21.

The laser transmission member 8 may be made of a material that transmits laser. The laser transmission member 8 can be implemented with any beam-transmitting material.

The laser transmission member 8 may be implemented, for example, with any one of quartz, sapphire, fused silica glass, or diamond. However, the physical properties of the laser transmission member 8 made of quartz are different from those of the laser transmission member 8 made of sapphire. For example, when irradiating a 980 nm Laser, the transmittance of the laser penetrating member 8 made of quartz is 85% to 99%, and the transmittance of the laser penetrating member 8 made of sapphire is 80%. It may be % to 90%. In order to prevent damage to the laser penetrating member 8 made of a quartz material and improve durability, a thin film coating layer can be formed on the bottom surface of the laser penetrating member 8 made of a quartz material. The thin film coating layer formed on the bottom surface of the laser transmission member 8 may be implemented as a dielectric coating, a typical optical coating, a SiC coating, or a metallic material coating.

The upper pressing member 5 may be connected to the laser transmission member 8. The upper pressing member 5 can press in one direction. For example, the upper pressing member 5 may apply pressure in one direction of the third direction (Z). Accordingly, the laser transmission member 8 connected to the upper pressing member 5 can press the transfer member 21 in one direction of the third direction (Z).

As the laser is irradiated to the bonding electrode 23 while pressing the transfer member 21 with the laser transmission member 8, the laser LS passes through the laser transmission member 8 and the transfer member 21 to form a bond. It may be irradiated to the electrode 23. Accordingly, the laser LS applies heat to the bonding electrode 23 up to the melting temperature of the bonding electrode 23, thereby enabling pressure melt bonding of the circuit board 10 and the bonding electrode 23. Here, in pressure melt bonding, the bonding electrode 23 is heated and melted by irradiation of the laser LS, and the light emitting element LE, the anode pad electrode (APD), and the cathode pad electrode (CPD) are melted and mixed. , This refers to the state where the laser supply is terminated and cooled and solidified. Even though it is cooled and solidified in the melted mixed state, the conductivity of the light emitting element (LE), anode pad electrode (APD), and cathode pad electrode (CPD) is maintained, so the anode pad electrode (APD) and cathode pad electrode (CPD) Each light emitting element (LE) can be electrically and physically connected.

The light emitting element LE may contact the anode pad electrode (APD) and the cathode pad electrode (CPD) of the circuit board 10 through the junction electrode 23. As described with reference to FIG. 4, the first contact electrode (CTE1) of the light emitting element (LE) is in contact with the anode pad electrode (APD) of the circuit board 10, and the second contact electrode of the light emitting element (LE) is in contact with the anode pad electrode (APD) of the circuit board 10. (CTE2) may contact the cathode pad electrode (CPD).

In one embodiment, a flip chip light emitting device is illustrated, but the present invention is not limited thereto and a vertical light emitting device may also be used.

The operation of the upper pressing member 5 and the laser transmission member 8 may be controlled through a control unit (not shown). For example, the control unit may control the operation of the laser penetrating member 8 using data input from a pressure sensor (not shown) and a height sensor (not shown). The control unit receives data from the pressure sensor and controls the upper pressing member (5) so that the pressure reaches the target value. Additionally, it receives data from the height sensor and controls the upper pressing member (5) and the laser transmission member to reach the target height value. (8) can be controlled.

In one embodiment, eutectic bonding is described in which a laser is irradiated to the bonding electrode 23 disposed at one end of the light emitting element LE to melt and bond it to the circuit board 10. However, this is not limited to this, and the light emitting element LE is ) and the circuit board 10, such as soldering bonding, which is bonded by melting a solder ball, and ACF (anisotropic conductive film bonding) bonding, which is bonded by heating an anisotropic conductive film between the light emitting element (LE) and the circuit board 10. Any one of the known bonding methods may be adopted.

Next, the transfer head 40 can peel and remove the transfer member 21 from the circuit board 10 . (Step S310 in FIG. 19)

Referring to FIG. 22, the transfer member 21 disposed on the circuit board 10 to which the light emitting element LE is bonded is bonded to the transfer head 40, and when the transfer head 40 rises in the vertical direction, light is emitted. An attractive force greater than the adhesive force between the element LE and the transfer member 21 is applied to the transfer member 21 in the Z direction. As a result, the transfer member 21 is detached from the circuit board 10 to which the light emitting element LE is bonded. At this time, the adhesive force between the light emitting element LE and the circuit board 10 is the highest, the adhesive force between the transfer member 21 and the transfer head 40 is the next highest, and the adhesive force between the light emitting element LE and the transfer member 21 is the next highest. Adhesion may be the lowest. Therefore, when force is applied in the Z direction while the circuit board 10, the light emitting element (LE), the transfer member 21, and the transfer head 40 are overlapped in the Z direction, the light emitting element (LE) with the lowest adhesion force ) and the transfer member 21 can be detached from each other.

Next, referring to FIG. 23, the flux on the circuit board 10 to which the light emitting element LE is bonded is removed using a flux cleaner. As the flux cleaner, a known flux cleaner (preferably an aqueous flux cleaner) can be used. For example, flux cleaners such as CLEANTHROUGH 750HS and CLEANTHROUGH 750K manufactured by Kao Corporation and PINE ALPHA ST-100S manufactured by Arakawa Chemical Industries, Ltd. may be used, but are not limited thereto.

The cleaning conditions for cleaning the circuit board 10 are not particularly limited. For example, the circuit board 10 may be cleaned at a cleaning agent temperature of 30 to 50°C for 1 to 5 minutes (preferably at 40°C for 2 to 4 minutes).

As described in one embodiment, by using a transfer member that is removable from the transfer head and disposable, there is no need to consider attachment of contaminants, such as flux, to the transfer member.

Additionally, since the transfer member is removed after the bonding process, contamination of the laser transmission member can be prevented by preventing the flux applied to the circuit board from directly contacting the laser transmission member.

Figure 24 is a schematic diagram explaining a method of transferring a light emitting device onto a circuit board according to an embodiment. Figure 25 is a schematic diagram explaining a method of transferring a light emitting device onto a circuit board according to another embodiment.

Referring to FIG. 24, each transfer member 21 disposed on the circuit board 10 may be spaced apart from each other at a constant pitch d. The circuit board 10 may be cut according to the size of each transfer member 21. Each cut circuit board 10 can be a small display device such as a smart watch.

Referring to 24 in another modified example, each transfer member 21 disposed on the circuit board 10 is disposed without separation so that the joint between each transfer member 21 is not visible, thereby forming a large display device. . Additionally, a plurality of circuit boards 10 may be disposed to be implemented as a tile-type display device.

As can be seen with reference to FIGS. 24 and 25 , the method of manufacturing a display panel according to an embodiment can be applied to large-sized display devices as well as small-sized display devices.

According to a method of manufacturing a display panel according to an embodiment, the problem of transfer defects due to contamination on the transfer member can be solved by transferring the light emitting device on the donor substrate to the circuit board using a one-time transfer member.

Additionally, the transfer member can be removed after the bonding process between the light emitting device and the circuit board to prevent the flux from directly contacting the laser transmission member, thereby preventing contamination of the laser transmission member.

Although embodiments of the present invention have been described above with reference to the attached drawings, the present invention is not limited to the above embodiments and can be manufactured in various different forms, and can be manufactured in various different forms by those skilled in the art. It will be understood by those who understand that the present invention can be implemented in other specific forms without changing its technical spirit or essential features. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive.

100: display panel
10: circuit board
21: Absence of transcription
30: protective film
23: Junction electrode
24: flux
LE: light emitting element
40: transfer head
8: Absence of laser transmission
5: Upper press member
90: Inversion member
APD: anode pad electrode
CPD: cathode pad electrode

Claims (20)

Preparing a master copy of a transfer member by sequentially laminating a protective film, a stamp layer, and a base layer on a support member;
Adsorbing one surface of the transfer head on the base layer, lifting the transfer head in one direction to separate the main body of the transfer member from the support member; and
Creating a plurality of transfer members by cutting the ledger of the transfer member into transfer unit sizes.
A method of producing a transfer member comprising. According to claim 1,
The base layer is formed of ultra-thin glass or polymer,
A method of manufacturing a transfer member wherein the stamp layer is formed of a material having adhesiveness or adhesiveness. According to claim 1,
The step of cutting into the transfer unit size to create a plurality of transfer members,
A method of manufacturing a transfer member, wherein the raw material of the transfer member is cut into transfer unit sizes by a mechanical cutting method or a laser cutting method, and the protective film is removed. According to clause 3,
A method of manufacturing a transfer member wherein the protective film is formed of ultra-thin glass or polymer. preparing a ledger of the transfer member on the support member;
adsorbing a plurality of chucks disposed on one side of the transfer head onto the transfer member, lifting the transfer head in one direction to separate the main body of the transfer member from the support member;
generating a plurality of transfer members by cutting the original copy of the transfer member into transfer unit sizes;
contacting one surface of the transfer member adsorbed on the plurality of chucks with the upper surface of the plurality of light emitting devices aligned on the donor substrate;
Lifting the transfer head in one direction to separate the plurality of light emitting devices from the donor substrate;
Positioning the plurality of light-emitting devices and a plurality of transfer members attached to the plurality of light-emitting devices on an upper part of a circuit board; and
Transferring the light emitting device and the transfer member to the circuit board by lowering the plurality of chucks in another direction opposite to the one direction and detaching the plurality of chucks and the transfer member.
A light emitting device transfer method comprising. According to clause 5,
A light emitting device transfer method in which the plurality of chucks can be individually driven. According to clause 5,
The step of preparing the ledger of the transfer member on the support member,
Prepare a ledger of the transfer member by sequentially stacking a protective film, a stamp layer, and a base layer on the support member,
The base layer is formed of ultra-thin glass or polymer,
A light emitting device transfer method wherein the stamp layer is formed of a material having adhesiveness or adhesiveness. According to clause 7,
The step of generating the plurality of transfer members includes:
A light emitting device transfer method in which the original copy of the transfer member is cut into transfer unit sizes by a mechanical cutting method or a laser cutting method, and the protective film is removed. According to clause 8,
A light emitting device transfer method wherein the protective film is formed of ultra-thin glass or polymer. According to clause 5,
The light emitting device transfer method includes an n-type semiconductor, an active layer, a p-type semiconductor, a first contact electrode, and a second contact electrode. According to clause 5,
A light emitting device transfer method wherein the circuit board includes flux applied to one surface. preparing a ledger of the transfer member on the support member;
adsorbing a plurality of chucks disposed on one side of the transfer head onto the transfer member, lifting the transfer head in one direction to separate the main body of the transfer member from the support member;
generating a plurality of transfer members by cutting the original copy of the transfer member into transfer unit sizes;
contacting one surface of the transfer member adsorbed on the plurality of chucks with the upper surface of the plurality of light emitting devices aligned on the donor substrate, and lifting the transfer head in one direction to separate the plurality of light emitting devices from the donor substrate;
Positioning the plurality of light-emitting devices and a plurality of transfer members attached to the plurality of light-emitting devices on an upper part of a circuit board;
sequentially lowering the plurality of chucks in another direction opposite to the one direction and detaching the plurality of chucks and the transfer member to transfer the light emitting element and the transfer member to a circuit board;
bonding the light emitting device to which the transfer member is attached on the circuit board; and
removing, by the transfer head, the transfer member by peeling it from the light emitting element of the circuit board;
A method of manufacturing a display panel comprising: According to claim 12,
The step of preparing the ledger of the transfer member on the support member,
Prepare a ledger of the transfer member by sequentially stacking a protective film, a stamp layer, and a base layer on the support member,
The base layer is formed of ultra-thin glass or polymer,
A method of manufacturing a display panel, wherein the stamp layer is formed of a material having adhesiveness or adhesiveness. According to claim 13,
The step of generating the plurality of transfer members includes:
A method of manufacturing a display panel, wherein the raw material of the transfer member is cut into transfer unit sizes by a mechanical cutting method or a laser cutting method, and the protective film is removed. According to claim 13,
The protective film is a method of manufacturing a display panel in which the protective film is formed of ultra-thin glass or polymer. According to claim 11,
A method of manufacturing a display panel, wherein the light emitting device includes an n-type semiconductor, an active layer, a p-type semiconductor, a first contact electrode, and a second contact electrode. According to claim 11,
A method of manufacturing a display panel, wherein the circuit board includes flux applied to one surface. According to claim 17,
After the step of peeling and removing the light emitting element of the circuit board,
A method of manufacturing a display panel in which the flux is removed from the circuit board using a flux cleaner. According to claim 12,
The step of bonding the light emitting device on the circuit board includes:
Eutectic bonding, which involves melting and bonding a bonding electrode disposed at one end of the light-emitting device to the circuit board, soldering bonding, which involves melting and bonding a solder ball between the light-emitting device and the circuit board, and bonding the light-emitting device to the circuit. A method of manufacturing a display panel that employs any one of ACF (anisotropic conductive film bonding) bonding, which involves heating and bonding an anisotropic conductive film between substrates. According to claim 12,
The support member supports a plurality of transfer members,
A method of manufacturing a display panel, wherein each of the plurality of transfer members has the same transfer unit size as a transfer area on the circuit board that is transferred in one pass.