KR20230167644A - Probe card with high alignment precision - Google Patents

Abstract

The present invention relates to a probe card having high alignment accuracy by forming a plurality of alignment keys at a position where a recognition error does not occur. The probe card according to an embodiment includes: a base substrate having a plurality of via electrodes formed therein; a space converter including a circuit pattern layer formed on an upper surface of the base substrate and connected to the via electrodes to test a semiconductor wafer, an insulating layer insulating the circuit pattern layer, and a needle wiring pattern layer formed on an upper surface of the insulating layer and connected to the circuit pattern layer; a plurality of probe needles connected to the needle wiring pattern layer; a plurality of first alignment key patterns formed on an upper surface of the insulating layer at a position spaced apart from the probe needles by a predetermined distance; and a plurality of second alignment key patterns formed at positions spaced apart from the plurality of first alignment key patterns by a predetermined distance, respectively.

Description

Probe card with high alignment precision}

The present invention relates to a probe card, and more specifically, to a probe card with high alignment accuracy by forming a plurality of alignment keys in positions where recognition errors do not occur.

Generally, the probe test process is a process of examining the electrical characteristics of each die formed on a semiconductor substrate, and is a process of determining whether each die formed on the semiconductor substrate is in good electrical condition. The probe test process is also called an electric die sorting (EDS) process and is performed using a probe card. The probe card is a key component for testing the condition of the wafer during the semiconductor manufacturing process, and serves to transmit the wafer's electrical signal to the tester.

The probe test process is performed by aligning the wafer and the probe card in the prober equipment and bringing the tip of the probe card into contact with the wafer pad. The probe card is aligned by identifying the position of the tip formed on the probe card.

However, the existing method of aligning the probe card using the tip formed on the probe needle has a problem in that the precision is low, so it takes a lot of time to align the probe card, and the reliability of the inspection can be reduced due to poor alignment.

In addition, the probe card is manufactured by bonding the alignment key or tip to the substrate, but the bonding position is somewhat different for each probe card manufactured, so tolerances easily occur, so even when the same probe card is used, the alignment tendency is varied. There is a problem of decreased precision, so research is needed on ways to compensate for this.

According to one embodiment, the aim is to provide technical details on a probe card with high alignment precision by forming a plurality of alignment keys in positions where recognition errors do not occur.

In addition, as alignment keys are formed on the substrate using a patterning method to prevent tolerances, the method shows the same distribution tendency when using the same probe card, thereby providing technical information about the probe card that can ensure inspection reliability. It is done.

A probe card according to an embodiment includes a base substrate having a plurality of via electrodes formed therein; A circuit pattern layer formed on the upper surface of the base substrate and connected to the via electrode for semiconductor wafer testing, an insulating layer insulating the circuit pattern layer, and a needle formed on the upper surface of the insulating layer and connected to the circuit pattern layer. a spatial converter including a wiring pattern layer; a plurality of probe needles connected to the needle wiring pattern layer; a plurality of first alignment key patterns formed on the upper surface of the insulating layer at positions spaced apart from the probe needle by a predetermined distance; and a plurality of second alignment key patterns each formed at a position spaced apart from the plurality of first alignment key patterns by a predetermined distance.

According to one embodiment, the first alignment key pattern may include a circular alignment key formed at a distance of 100 to 1,000 ㎛ from the outermost probe needle formed on the needle wiring pattern layer, The circular alignment key may have an embossed or engraved structure, and may have a double-layer structure including a conductive metal layer and a plating layer.

According to one embodiment, the first alignment key pattern is formed at a position spaced apart from the outermost probe needle formed on the needle wiring pattern layer by a distance of 100 to 1,000 ㎛. 1 circular embossed alignment key, a second circular embossed alignment key formed at a distance of 100 to 500 ㎛ from the first circular embossed alignment key, and spaced apart from the second circular embossed alignment key at a distance of 100 to 500 ㎛ It may have a structure including a third circular engraved alignment key formed at the desired position.

According to one embodiment, the second alignment key pattern may be a grid pattern in which four square alignment keys are formed at equally spaced positions to form orthogonal division lines with the same line width.

The probe card according to the embodiment forms a pattern on the substrate, forming a plurality of alignment key patterns in positions where recognition errors do not occur, thereby eliminating tolerances for each probe card and improving alignment precision. Deterioration of inspection reliability due to misalignment can be prevented, and operation rate can be improved and test automation can be implemented.

In addition, by forming additional alignment pins that do not contact the semiconductor wafer, the same alignment is possible regardless of the number of times and time of use, thereby maintaining consistent test quality.

1 is a cross-sectional view showing the structure of a probe card according to an embodiment.
Figure 2 is a top view showing the basic structure of a probe card according to an embodiment.
Figure 3 is a top view showing an example of a probe card according to an embodiment.
Figure 4 is a structural diagram showing an example of a wafer inspection device in which a probe card is installed according to an embodiment.
Figure 5 is a process diagram showing a method of inspecting a wafer using a probe card according to an embodiment.

Below, with reference to the attached drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily implement the present invention. However, since the description of the present invention is only an example for structural and functional explanation, the scope of the present invention should not be construed as limited by the examples described in the text. In other words, since the embodiments can be modified in various ways and can take various forms, the scope of rights of the present invention should be understood to include equivalents that can realize the technical idea. In addition, the purpose or effect presented in the present invention does not mean that a specific embodiment must include all or only such effects, so the scope of the present invention should not be understood as limited thereby.

The meaning of terms described in the present invention should be understood as follows.

Terms such as “first” and “second” are used to distinguish one component from another component, and the scope of rights should not be limited by these terms. For example, a first component may be named a second component, and similarly, the second component may also be named a first component. When a component is referred to as being “connected” to another component, it should be understood that it may be directly connected to the other component, but that other components may also exist in between. On the other hand, when a component is referred to as being “directly connected” to another component, it should be understood that there are no other components in between. Meanwhile, other expressions that describe the relationship between components, such as "between" and "immediately between" or "neighboring" and "directly neighboring" should be interpreted similarly.

Singular expressions should be understood to include plural expressions, unless the context clearly indicates otherwise, and terms such as “comprise” or “have” refer to the specified features, numbers, steps, operations, components, parts, or them. It is intended to specify the existence of a combination, and should be understood as not excluding in advance the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

All terms used herein, unless otherwise defined, have the same meaning as commonly understood by a person of ordinary skill in the field to which the present invention pertains. Terms defined in commonly used dictionaries should be interpreted as consistent with the meaning they have in the context of the related technology, and cannot be interpreted as having an ideal or excessively formal meaning unless clearly defined in the present invention.

1 to 3 are diagrams showing a probe card according to an embodiment.

Referring to Figures 1 to 3, a probe card according to an embodiment includes a base substrate 110; spatial converter 120; Probe needle 130; It has a structure including a first alignment key pattern 140 and a second alignment key pattern 150.

The base substrate 110 has a spatial converter 120, a probe needle 130, a first alignment key pattern 140, and a second alignment key pattern 150 formed on its upper surface, respectively, to form a support for forming a probe card. It plays a role.

The base substrate 110 may have a structure in which a plurality of via electrodes 111 formed using a conductive metal material are formed in a preset pattern.

A spatial converter 120 may be formed on the upper surface of the base substrate 110, and an LGA pad 113 may be formed on the lower surface.

The LGA (land ground array) pad 113 is formed to electrically connect the printed circuit board and the probe needle 130 using an interposer, etc., and a via electrode 111 is connected to one side and an interposer to the other side. (not shown) may be connected to form a structure connected to a printed circuit board (not shown).

Accordingly, the base substrate 110 transmits the inspection signal received from the semiconductor inspection equipment to the spatial converter 120, which will be described later, in order to inspect the semiconductor wafer, and the received electrical signal is transmitted through the spatial converter 120 to the probe needle 130. ), and the resulting signal received from the spatial converter 120 through the via electrode 111 can be transmitted to semiconductor inspection equipment.

The base substrate 110 may be a ceramic substrate made of alumina ceramic material or a glass substrate. In particular, the ceramic substrate may be made of high temperature co-fired ceramic or low temperature co-fired ceramic.

The space transformer 120 is formed on one side of the base substrate 110. The spatial converter 120 may transmit the test signal received from the base substrate 110 to the probe needle 130 and transmit the result received from the probe needle 130 to the base substrate 110.

To this end, the space converter 120 has a structure including a circuit pattern layer 121, an insulating layer 123, a via wiring 125, and a needle wiring pattern 127.

The circuit pattern layer 121 is formed on the upper surface of the base substrate 110 and is electrically connected to the via electrode 111. The circuit pattern layer 121 may be formed of a conductive metal material such as copper (Cu), nickel (Ni), molybdenum (Mo), or gold (Au). The circuit pattern layer 121 may be formed through a typical thin film deposition process. The thin film deposition process may include methods such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD), as well as various processes capable of forming a thin film. In particular, the circuit pattern layer 121 may be formed by stacking nickel (Ni) and gold (Au), respectively. Of course, the laminated metal is not limited to nickel and gold, and various metals can be used depending on the situation.

The insulating layer 123 is formed on the upper surface of the base substrate 110 and serves to electrically insulate the circuit pattern layer 121. The insulating layer 123 may be formed of a heat-resistant resin containing polyimide. Polyimide (PI) is a heat-resistant resin that has an imide bond (-CO-NH-CO-) in the main chain. It has excellent heat resistance and has the advantage of not aging even when used for a long time at high temperatures.

The circuit pattern layer 121 may be electrically connected to the needle wiring pattern 127 formed on the upper surface of the insulating layer 123 by a via wiring 125. A probe needle 130 may be connected to the needle wiring pattern 127.

In the spatial converter 120, the circuit pattern layer 121 and the insulating layer 123 can be formed at least one layer, and in the drawing, the spatial converter including the circuit pattern layer 121 and the insulating layer 123 ( Although 120) is shown as having a two-layer structure, the circuit pattern layer 121 and the insulating layer 123 may be formed in plural pieces to suit the purpose.

More specifically, the spatial converter 120 may be used to compensate for the difference between the pitch of the base substrate 110 and the pitch of the pads of the semiconductor devices formed on the semiconductor wafer. Accordingly, the circuit pattern layer 121 and the insulating layer 123 may be formed in plural pieces to suit the purpose.

The probe needles 130 are formed in plural numbers in the center of the probe card to form a probe structure for electrical connection to the semiconductor wafer, and the needle wiring pattern 127 is formed on the upper surface of the insulating layer 123 of the space converter 120. ) is installed.

Specifically, the probe needle 130 may be formed in a needle shape with a thin thickness so that one end thereof contacts the terminal of each die formed on the semiconductor wafer. The probe needle 130 may be bent at a predetermined angle so that one end contacts the pads of each die, but the probe needle 130 is not limited to this. And the other end of the probe needle 130 may be connected to the needle wiring pattern 127 by a method such as soldering.

The probe needle 130 can be implemented using various types of probe needles commonly used to inspect semiconductor wafers. For example, a probe needle with a needle-type, vertical, or cantilever-type structure can be introduced. In particular, the probe needle 130 has a proximal end 131 formed on the upper surface of the space converter 130, a beam 133 extending in the lateral direction from the upper surface of the proximal end 131, and a beam 133 perpendicular to the other end of the beam 133. It may have a structure including probe tips 135 that are protruding and each contact a die formed on a semiconductor wafer. The probe needle 130 as described above may be manufactured using a conductive metal material.

The first alignment key pattern 140 and the second alignment key pattern 150 are formed on the spatial converter 120 or the base substrate 110 outside the probe needle 130, respectively, and are respectively formed on the semiconductor wafer by the probe needle 130. ) may be used to align the probe card 100 to be positioned on the semiconductor wafer in order to physically contact the probe tip 135 formed on the semiconductor wafer.

The first alignment key pattern 140 may be formed on the upper surface of the insulating layer 123 of the space changer 120. The first alignment key pattern 140 may have a circular shape, and may have a concave structure formed into the lower part of the insulating layer 123 or an embossed structure protruding from the upper part of the insulating layer 123.

The first alignment key pattern 140 may be fixedly formed at a position spaced a certain distance away from a specific DUT where the outermost probe needle is installed in the needle wiring pattern 127 formed on the insulating layer 123.

For example, the first alignment key pattern may be formed at a position spaced apart from the outermost probe needle formed on the needle wiring pattern layer 127 by a distance of 100 to 1,000 μm.

The first alignment key pattern 140 may be formed in a portion where the needle wiring pattern 127 is not formed, and the first alignment key pattern may be formed through a plating process, but is not limited thereto. Specifically, the circular alignment key may include a circular embossed alignment key with a double-layer structure including a conductive metal layer protruding from the upper surface of the insulating layer and a plating layer formed on the upper surface of the conductive metal layer. Alternatively, the circular alignment key is a circular engraved alignment key of a double-layer structure including a conductive metal layer formed inside the lower surface of the insulating layer, and a plating layer formed on the upper surface of the conductive metal layer and formed inside the lower surface of the insulating layer. may include.

The first alignment key pattern 140 may be formed in a patterned position on the insulating layer 123 and fixed at a certain position on the probe card. Accordingly, there is no change over time due to repeated use or usage time, so stable alignment is possible even when repeated tests are performed, and errors in the formation position can be minimized.

In particular, the first alignment key pattern 140 may have a structure that includes an alignment key that is embossed or engraved on the upper or lower surface of a specific DUT where the outermost probe needle is installed when forming the insulating layer 123.

The first alignment key pattern 140 may have a circular shape and may include an engraved circular alignment key or an embossed circular alignment key formed inside the upper surface of the insulating layer 123. The first alignment key pattern 140 serves as a low-magnification alignment key. Because the circular shape is symmetrical in any direction in the plane coordinate system, it can be easily used as a low-magnification alignment key.

At least one circular alignment key can be formed, and in order to prevent defects from occurring by combining an embossed circular alignment key and an engraved circular alignment key, a plurality of alignment keys can be formed. .

For example, as shown in FIG. 3, the first alignment key pattern 140 is attached to the first circular embossed alignment key 141 installed on one side of the outermost probe needle and the first circular embossed alignment key 141. It may have a structure including a second circular embossed alignment key 143 installed at an adjacent position, and a third circular engraved alignment key 145 installed at a position adjacent to the second circular embossed alignment key 143. The first circular embossed alignment key 141 may be formed at a position spaced apart from the outermost probe needle by a distance d1 of 100 to 1,000 ㎛, and the second circular embossed alignment key 143 may be formed at a position spaced apart from the outermost probe needle by a distance d1 of 100 to 1,000 ㎛. It may be formed at a position spaced apart from the key 141 by a distance d2 of 100 to 500 ㎛, and the third circular engraved alignment key 145 is at a distance of 100 to 500 ㎛ from the second circular embossed alignment key 143. It can be formed at a location spaced apart by (d3). In particular, the first circular embossed alignment key 141 may be formed at the top or bottom of the outermost probe needle at a distance of 300 ㎛. The second circular embossed alignment key 143 may be formed at the top or bottom of the first circular embossed alignment key 141 at a distance of 300 ㎛. The third circular embossed alignment key 145 may be formed at the top or bottom of the second circular embossed alignment key 143 at a distance of 300 ㎛. Additionally, the second alignment key pattern 150 may be formed at a position spaced apart from the third circular engraved alignment key 145 by a distance d4 of 1,000 to 5,000 ㎛.

The first to third circular alignment keys 141, 143, and 145 can each be formed by adjusting their sizes in consideration of precision and prevention of peeling.

For example, the first circular embossed alignment key 141 may have a circular structure with a diameter of 30 to 70 ㎛, and the second circular embossed alignment key 143 may have a circular structure with a diameter of 50 to 100 ㎛. The third circular engraved alignment key 145 may have a circular structure with a diameter of 30 to 70 ㎛. In particular, the first circular embossed alignment key 141 may have a circular embossed structure with a diameter of 50 ㎛, the second circular embossed alignment key 143 may have a circular embossed structure with a diameter of 75 ㎛, and the third The circular engraved alignment key 145 may have a circular engraved structure with a diameter of 50 ㎛.

In addition, the first and second circular embossed alignment keys 141 and 143 may be formed to protrude from the upper surface of the insulating layer to have a thickness of 1 to 5 μm to prevent the camera from misrecognizing the alignment key. The third circular embossed alignment key 145 may be formed into the lower surface of the insulating layer to have a thickness of 1 to 5 ㎛.

The formation location and number of the first alignment key patterns 140 may be determined depending on the size and shape of the probe card. A plurality of the first alignment key pattern 140 and the second alignment key pattern 150 may be formed symmetrically at the edge of the probe card. That is, a plurality of the first and second alignment key patterns may be formed symmetrically at the edges of the base substrate with respect to the center.

For example, if the probe card 100 is circular, the entire arc is divided into four equal parts and distributed evenly at the edges of the arc, or four first alignment key patterns 140 are placed at symmetrical positions with respect to the center of the circle. A second alignment key pattern 150 may be formed. At this time, the first alignment key pattern 140 and the second alignment key pattern 150 may be formed symmetrically at the edges with respect to the center of the probe card.

The second alignment key pattern 150 may be formed at a position spaced apart from the first alignment key pattern 140 by a preset distance. The second alignment key pattern 150 can be classified into a high-magnification alignment key based on the resolution of the lens, and alignment tolerance can be minimized. The second alignment key pattern 150 is placed outside the test DUT to prevent diffuse reflection and misrecognition due to the tip formed on the probe needle.

The second alignment key pattern 150 may be a grid pattern in which four square alignment keys are formed at equally spaced positions to form '+' shaped orthogonal division lines with the same line width, such a pattern. Since is symmetrical in the orthogonal direction, it can be easily used as a high-magnification alignment key through Cartesian coordinates (X, Y).

The second alignment key pattern 150 may be disposed at a distance of 1,000 to 5,000 ㎛ from the first alignment key pattern 140. In particular, the second alignment key pattern 150 may be disposed at a distance of 3,700 ㎛ from the first alignment key pattern 140.

Additionally, the second alignment key pattern 150 may have an area of 10 ㎛ × 10 ㎛ to 100 ㎛ × 100 ㎛. The orthogonal section lines may have a line width of 0.5 to 5 ㎛. In particular, the second alignment key pattern 150 may have an area of 36 ㎛ × 36 ㎛. The orthogonal section line may have a line width of 2 μm.

In addition, the first alignment key pattern 140 and the second alignment key pattern 150 may be arranged in a straight line so that their centers are located based on the reference lines A and B crossing the center of the base substrate 110. there is.

In addition, the first alignment key pattern 140 and the second alignment key pattern 150 as described above are formed through a patterning method such as an etching and exposure process using a photoresist used to form a pattern on an insulating layer. It can be formed. Accordingly, since the alignment key is formed by a patterning method on the substrate, the formation position is the same, and when using probe cards manufactured by the same method, the same distribution tendency can be displayed, and the probe has high alignment precision because no tolerance occurs. Cards can be manufactured, and inspection precision can be secured by replacing probe cards manufactured using the existing bonding method.

The probe card 100 according to the embodiment may further include an alignment pin 160. The alignment pin 160 can be installed in a standardized position regardless of the type of product, and has a constant shape, making standardization possible. The alignment pin 160 can be implemented using a standard shape setup pin. In particular, the alignment pin 160 may be installed at a position where the outermost probe needle is installed in the needle wiring pattern 127, and accordingly, may be formed at a position adjacent to the first alignment key pattern 140.

The probe card 100 according to the above-described embodiment forms a pattern on a substrate using an exposure and etching process, thereby forming a plurality of alignment key patterns at positions where recognition errors do not occur, thereby forming a probe. Tolerances do not occur for each card, and alignment precision can be improved, preventing a decrease in inspection reliability due to misalignment, improving operation rate, and implementing test automation.

In addition, by additionally forming alignment pins 160 that do not contact the semiconductor wafer, the same alignment is possible regardless of the number of times and time of use, thereby maintaining consistent test quality.

Meanwhile, Figure 4 is a structural diagram showing a wafer inspection device in which a probe card is installed according to an embodiment.

Referring to FIG. 4, the wafer inspection device in which the probe card according to the embodiment is installed includes a probe card 100, a wafer stage 200, a probe head 300, a prober 400, a controller 500, and a plurality of It may have a structure including cameras C1, C2, and C3.

The wafer stage 200 fixes the wafer W and performs an electrical characteristic inspection of the wafer W. To this end, the wafer stage 200 may have a structure including a fixed chuck on which the wafer W is fixed, a guide for moving the fixed chuck, and a motor. The wafer stage 200 may be provided with transfer means for transferring a wafer for inspection and fixing the wafer to a fixing chuck.

The probe head 300 is installed with the probe card 100 and forms a structure that can be raised and lowered, and serves to bring the probe needle 130 of the probe card 100 into contact with the wafer (W).

The prober 400 is electrically connected to the probe card 100 and supplies power to inspect the electrical characteristics of the wafer (W).

The controller 500 controls the operation of the wafer stage 200, probe head 300, and prober 400.

The wafer stage 200 and the probe head 300 can determine their respective positions using a plurality of cameras C1, C2, and C3 installed in adjacent positions.

Specifically, a plurality of first and second cameras C1 and C2 are formed on the upper part of the probe head 300 and the side of the wafer stage 200, respectively, to photograph the wafer stage 200 and the probe head 300. there is. The third camera C3, which is fixedly installed on the side of the wafer stage 200, photographs the probe card 100 from the side of the wafer stage 200. The first and second cameras C1 and C2 have a fixed structure, and the third camera C3 forms a structure that can move in the horizontal direction together with the wafer stage 200 and is formed on the probe card 100. The position of the probe card 100 can be confirmed by recognizing the alignment key patterns 140 and 150. The controller 500 uses image information of the wafer stage 200 and the probe card 100 obtained from the first and second cameras C1 and C2 to align the wafer W and the probe card 100 at the designated position. Control the operation of the wafer stage 200 and the probe head 300 as much as possible, align the probe card 100, and inspect the wafer W when the alignment is completed. The operation of each burr 400 can be controlled.

Additionally, the controller 500 may align the probe card 100 by horizontally moving the probe head 300 so that the corresponding alignment key patterns 140 and 150 are positioned on the index signal or image indexed at the corresponding location.

Accordingly, the controller 500 may include a database that stores information indexed by the alignment key patterns 140 and 150 at the corresponding location or coordinates.

Meanwhile, FIG. 5 is a process diagram showing a method of inspecting a wafer W using the probe card 100 according to an embodiment.

Referring to FIG. 5, the wafer inspection method includes aligning the probe card 100 at low magnification using the first alignment key pattern 140 (S100); Sorting the probe card 100 at high magnification using the second alignment key pattern 150 (S200); It may include arranging a wafer for testing (S300) and testing the wafer (S400).

Specifically, in the wafer inspection method, when the wafer W is loaded on the wafer stage 200, the probe card 100 can be aligned at low magnification using the first alignment key pattern 140. At this time, the third camera (C3) captures the first alignment key pattern by enlarging the surface of the probe card 100 at low magnification to collect first image information, and transmits the collected first image information to the controller 500. It can be sent to . The controller 500 uses the collected first image information to align the probe cards at low magnification.

Afterwards, the third camera (C3) collects second image information by enlarging the surface of the probe card 100 at high magnification to capture the second alignment key pattern 150, and transmits the collected second image information to the controller. It can be sent to (500). The controller 500 uses the collected second image information to align the probe card 100 at high magnification. At this time, the third camera (C3) moves to a position perpendicular to the plurality of second alignment key patterns 150 formed at the edge of the probe card 100, detects the planar position of the second alignment key pattern 150, and probes the probe card 100. It allows the cards 100 to be aligned at high magnification.

Next, the wafer stage 200 is moved to align the wafer W so that the wafer W is placed in a position corresponding to the probe card 100.

Afterwards, the electrical characteristics of the wafer W installed on the wafer stage 200 are inspected.

During this process, when using the probe card 100 according to the embodiment, the controller 500 creates two virtual alignment lines at symmetrical positions with respect to the center of the probe card 100. Next, the controller 500 uses the second image information captured by the third camera to create Align the probe card 100 at low magnification so that the virtual alignment line is placed.

As described above, the probe card 100 is aligned at low magnification so that a virtual alignment line is placed in the inner area formed between common external lines, and the probe card 100 aligned at low magnification is aligned with the external line of the third circular engraved alignment key 145. Align at high magnification so that the virtual alignment line is placed at the center point of the orthogonal center line of the second alignment key pattern 150.

At this time, the first circular embossed alignment key 141, the second circular embossed alignment key 143, the third circular embossed alignment key 145, and the second alignment key pattern 150 are aligned at low magnification as they are arranged in a straight line. After placing the virtual alignment line of the probe card 100, the virtual alignment line of the probe card 100 is located at the center point of the circumscribed line of the third circular engraved alignment key 145 and the orthogonal center line of the second alignment key pattern 150. The probe card 100 can be precisely aligned in a short time by aligning at high magnification so that the alignment line is placed.

The probe card 100 according to the embodiment aligns the probe card 100 at low magnification using the first alignment key pattern 140 and the second alignment key pattern 150, and then precisely aligns the probe at high magnification. The sorting time for the cards 100 can be greatly shortened, thereby maximizing productivity.

In particular, the probe card 100 is aligned at low magnification so that a virtual alignment line is placed in the inner area formed between the common circumscribed line of the first circular embossed alignment key 141 and the second circular embossed alignment key 143, and then aligned at low magnification. Alignment precision can be greatly improved by aligning at high magnification so that the virtual alignment line is placed at the center point of the circumferential line of the third circular engraved alignment key 145 and the orthogonal center line of the second alignment key pattern 150. Accordingly, the inspection accuracy can be greatly improved. Ensure reliability.

A detailed description of preferred embodiments of the invention disclosed above is provided to enable any person skilled in the art to make or practice the invention. Although the present invention has been described above with reference to preferred embodiments, those skilled in the art will understand that various modifications and changes can be made to the present invention without departing from the scope of the present invention. For example, a person skilled in the art may use each configuration described in the above-described embodiments by combining them with each other. Accordingly, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

The present invention may be embodied in other specific forms without departing from the spirit and essential features of the present invention. Accordingly, the above detailed description should not be construed as restrictive in all respects and should be considered illustrative. The scope of the present invention should be determined by reasonable interpretation of the appended claims, and all changes within the equivalent scope of the present invention are included in the scope of the present invention. The present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein. In addition, claims that do not have an explicit reference relationship in the patent claims can be combined to form an embodiment or included as a new claim through amendment after filing.

100: probe card 110: base board
120: spatial converter 130: probe needle
140: first sort key pattern 150: second sort key pattern
160: alignment pin 200: wafer stage
300: Probe head 400: Prober
500: Controller C1 to C3: Camera

Claims (12)

A base substrate with a plurality of via electrodes formed therein;
A circuit pattern layer formed on the upper surface of the base substrate and connected to the via electrode for semiconductor wafer testing, an insulating layer insulating the circuit pattern layer, and a needle formed on the upper surface of the insulating layer and connected to the circuit pattern layer. a spatial converter including a wiring pattern layer;
a plurality of probe needles connected to the needle wiring pattern layer;
a plurality of first alignment key patterns formed on the upper surface of the insulating layer at positions spaced apart from the probe needle by a predetermined distance; and
A probe card including a plurality of second alignment key patterns each formed at a position spaced apart from the plurality of first alignment key patterns by a predetermined distance. According to paragraph 1,
The first alignment key pattern includes a circular alignment key formed at a distance of 100 to 1,000 ㎛ from the outermost probe needle formed on the needle wiring pattern layer. According to paragraph 2,
The probe card is a circular embossed alignment key with a double-layer structure, wherein the circular alignment key includes a conductive metal layer protruding from the upper surface of the insulating layer and a plating layer formed on the upper surface of the conductive metal layer. According to paragraph 2,
The circular alignment key is a probe card that is a circular engraved alignment key of a double-layer structure including a conductive metal layer formed inside the lower surface of the insulating layer and a plating layer formed on the upper surface of the conductive metal layer and formed inside the lower surface of the insulating layer. . According to paragraph 1,
The first alignment key pattern includes a first circular embossed alignment key formed at a distance of 100 to 1,000 ㎛ from the outermost probe needle formed on the needle wiring pattern layer, and the first circular embossed alignment key. A second circular embossed alignment key formed at a position spaced apart by a distance of 100 to 500 ㎛, and a third circular engraved alignment key formed at a position spaced apart from the second circular embossed alignment key at a distance of 100 to 500 ㎛. Probe card. According to clause 5,
The first circular embossed alignment key has a diameter of 30 to 70 ㎛, the second circular embossed alignment key has a diameter of 50 to 100 ㎛, and the third circular engraved alignment key has a diameter of 30 to 70 ㎛. According to clause 5,
The probe card, wherein the first circular embossed alignment key and the second circular embossed alignment key each have a thickness of 1 to 5 ㎛. According to clause 5,
A probe card in which a plurality of the first and second alignment key patterns are formed symmetrically at edges of the base substrate with respect to the center of the base substrate. According to paragraph 1,
The second alignment key pattern is a grid pattern in which four square alignment keys are formed at equally spaced positions to form orthogonal division lines of the same line width. According to paragraph 1,
The probe card wherein the second alignment key pattern is formed at a location spaced apart from the first alignment key pattern by a distance of 1,000 to 5,000 ㎛. According to paragraph 1,
The second alignment key pattern is a probe card having an area of 10 ㎛ × 10 ㎛ to 100 ㎛ × 100 ㎛. According to paragraph 1,
A probe card further comprising a plurality of alignment needles installed on the outermost surfaces of the plurality of probe needles connected to the needle wiring pattern layer.