KR20230150321A - Substrate processing method, storage medium, and substrate processing device - Google Patents

Abstract

A substrate processing method according to one aspect of the present disclosure includes supplying a developer solution to the surface of the substrate to form a developer liquid film on the surface of the substrate, and applying a developer liquid film to the surface of the substrate to advance development on the substrate surface. While the development is proceeding by maintaining the liquid film of the developer, the degree of development is adjusted between the peripheral edge area of the substrate surface and the internal area inside the peripheral edge area. It involves supplying conditioning fluid (L2) to inhibit progression.

Description

Substrate processing method, storage medium, and substrate processing device

The present disclosure relates to a substrate processing method, storage medium, and substrate processing apparatus.

Patent Document 1 discloses a substrate development processing device including a substrate holding means, a developing solution supply means, and a rinse solution supply means. The rinse liquid supply means of this development processing apparatus moves in the horizontal direction and discharges the rinse liquid onto the substrate from the slit-shaped discharge port to stop the development reaction by the developer.

Patent Document 1: Japanese Patent Publication No. 2003-257849

The present disclosure provides a substrate processing method, a storage medium, and a substrate processing apparatus that can easily adjust the line width distribution on the substrate surface.

A substrate processing method according to one aspect of the present disclosure includes supplying a developer solution to the surface of the substrate to form a developer liquid film on the surface of the substrate, and applying a developer liquid film to the surface of the substrate to advance development on the substrate surface. While the development is proceeding by maintaining the liquid film of the developer, the degree of development is adjusted between the peripheral edge area of the substrate surface and the internal area inside the peripheral edge area. It involves supplying a conditioning fluid to inhibit progression.

According to the present disclosure, a substrate processing method, a storage medium, and a substrate processing apparatus that can easily adjust the line width distribution on the substrate surface are provided.

1 is a perspective view schematically showing an example of a substrate processing system.
Figure 2 is a side view schematically showing an example of a coating and developing device.
Figure 3 is a side view schematically showing an example of a developing unit.
Figures 4(a) and 4(b) are schematic diagrams showing an example of a nozzle discharging a developer.
Fig. 5 is a block diagram showing an example of the hardware configuration of the control device.
Fig. 6 is a flowchart showing an example of development processing.
7(a) and 7(b) are schematic diagrams illustrating development processing.
Fig. 8 is a flowchart showing an example of a process for forming a liquid film of a developer.
Figures 9(a) to 9(d) are schematic diagrams illustrating the process for forming a liquid film of a developer.
Fig. 10 is a flowchart showing an example of processing for maintaining a liquid film to advance development.
Figures 11(a) and 11(b) are schematic diagrams illustrating the process for maintaining the liquid film.
Figures 12(a) and 12(b) are schematic diagrams illustrating the process for maintaining the liquid film.
FIG. 13(a) is a diagram showing an example of the measurement result of the line width distribution when no adjustment liquid is used. FIG. 13(b) is a diagram showing an example of the measurement results of line width distribution when an adjustment liquid is used.
Fig. 14 is a graph showing an example of the measurement results of the line width distribution along the radial direction.
FIG. 15(a) and FIG. 15(b) are graphs showing an example of the change in line width with respect to the start timing of supply of the adjustment liquid.
Fig. 16 is a flowchart showing an example of a method for setting supply start timing.
Figures 17(a) and 17(b) are schematic diagrams illustrating the discharge of the adjustment liquid.
Figure 18 is a schematic diagram showing an example of a nozzle that discharges a developer.
Fig. 19 is a flowchart showing an example of a process for forming a liquid film of a developer.
FIG. 20(a) is a diagram showing an example of the measurement result of the line width distribution when no adjustment liquid is used. FIG. 20(b) is a diagram showing an example of the measurement results of line width distribution when an adjustment liquid is used.
Figure 21 is a schematic diagram showing an example of a nozzle that discharges a developer.
Fig. 22 is a flowchart showing an example of processing for forming a pattern by development.

Hereinafter, an outline of the embodiment will be described.

A substrate processing method according to one aspect of the present disclosure includes supplying a developer solution to the surface of the substrate to form a developer liquid film on the surface of the substrate, and applying a developer liquid film to the surface of the substrate to advance development on the substrate surface. While the development is proceeding by maintaining the liquid film of the developer, the degree of development is adjusted between the peripheral edge area of the substrate surface and the internal area inside the peripheral edge area. It involves supplying a conditioning fluid to inhibit progression.

In this substrate processing method, while development is in progress, an adjustment liquid for suppressing the development of development is supplied to the peripheral edge area of the surface. Accordingly, the degree of phenomenon is adjusted between the peripheral edge area and the internal area inside the peripheral edge area. Since the line width changes depending on the degree of development, the line width can be adjusted by supplying the adjustment liquid to the peripheral edge area. As a result, it becomes possible to easily adjust the line width distribution within the substrate plane.

Supplying the developer involves rotating the substrate while moving a developing nozzle capable of discharging the developer into a discharge area extending in one direction along the surface of the substrate along a moving direction intersecting the discharge area, and also discharging the developer from the developing nozzle. It may also include discharging. Moving the developing nozzle along the moving direction may include moving the developing nozzle so that the discharge area moves from the end of the substrate surface toward a central area containing the center of the substrate surface. In this case, the developer spreads over approximately the entire surface while the discharge area extends from the end of the substrate surface to the central area. Since the moving distance of the developing nozzle is small, the developer can be spread out in a short period of time, and the difference in the degree of development due to the time difference in liquid deposition within the substrate surface is reduced. As a result, line width uniformity within the substrate plane can be improved.

A resist film in a state exposed by i-line may be formed on the surface of the substrate before development with a developer is performed. When developing a resist film that has been exposed to i-line, a difference in the degree of development is likely to appear due to a temperature difference between the peripheral edge area and the internal area within the substrate surface. In the above method, the degree of development of the peripheral edge area is adjusted by supplying the adjustment liquid to the peripheral edge area. As a result, it is possible to adjust the difference in the degree of phenomenon due to the temperature difference.

Maintaining the liquid film of the developer on the surface of the substrate may include accelerating the rotation of the substrate to a predetermined rotation speed before supplying the adjustment liquid. Supplying the adjustment liquid may include supplying the adjustment liquid to the peripheral edge area of the substrate being rotated at a predetermined rotation speed. In this case, the adjustment liquid is supplied to the peripheral edge area while centrifugal force is acting on the liquid film on the surface due to rotation of the substrate. Therefore, it is difficult for the adjustment liquid that has reached the peripheral edge area to move inward. As a result, line width adjustment between the peripheral edge area and the inner area becomes easier.

In the above substrate processing method, after stopping the supply of the adjustment liquid, the liquid film of the developer may be maintained continuously in order to advance development on the surface of the substrate. In this case, after stopping the supply of the adjustment liquid, development proceeds in a state in which the development in the peripheral edge area is suppressed, so compared to the case where development is stopped immediately after supplying the adjustment liquid, the effect of suppressing development by the adjustment liquid is increased. Easy to exercise.

Supplying the adjustment liquid to the peripheral edge area means supplying the adjustment liquid so that the time for supplying the adjustment liquid at the end of the period is longer than the time for supplying the adjustment liquid at the front of the period for maintaining the developer liquid film on the surface of the substrate. It may also include doing so. In this case, development can be progressed to the target level even in the peripheral edge area at the front end of the period during which development is performed. Therefore, it is possible to adjust the line width distribution within the plane while advancing development in the peripheral edge area.

The substrate processing method may further include supplying gas to the surface of the substrate to an extent that the surface of the substrate is not exposed while development is progressing by maintaining the liquid film of the developer. In this case, since gas is supplied to the surface of the substrate, the temperature difference between the peripheral edge area and the inner area can be reduced. Therefore, it is possible to suppress the decline in line width uniformity due to the temperature difference within the substrate plane.

Supplying gas to the surface of the substrate may include supplying gas to the internal region. In this case, since the temperature of the inner region to which the gas is supplied decreases, the temperature difference between the peripheral edge region and the inner region is reduced even if the temperature of the peripheral region decreases. As a result, it is possible to further suppress the decline in line width uniformity due to the temperature difference within the substrate plane.

In the above substrate processing method, after supplying gas to the surface of the substrate, the adjustment liquid may be supplied to the peripheral edge area. If gas with a large flow rate is supplied after supplying the adjustment liquid, there is a risk that the adjustment liquid may spread into the liquid film of the developer. In contrast, in the above method, since the adjustment liquid is supplied after the supply of gas, the adjustment liquid does not spread due to the supply of gas. As a result, it is possible to achieve both efficient gas supply and line width adjustment.

Supplying the adjustment liquid may include supplying the adjustment liquid to the peripheral edge area by discharging the adjustment liquid toward the edge of the substrate surface. In this case, it is difficult for the adjustment liquid after being supplied to the developer liquid film to move to the central part of the liquid film. As a result, adjustment of the line width in the peripheral edge area by supplying the adjustment liquid becomes easy.

The above substrate processing method includes acquiring the line width distribution along the radial direction and the deviation of the target distribution on the surface of the substrate after development, and the relationship between the start timing of starting supply of the adjustment liquid and the line width in the peripheral edge area. It may further include calculating the start timing to reduce the shift amount for the subsequent substrate, based on the model built to represent and the obtained shift amount. In this case, since the timing of supplying the adjustment liquid can be changed to adjust the line width, the line width distribution within the substrate surface after development can be easily brought close to the target distribution.

A computer-readable storage medium according to one aspect of the present disclosure is a storage medium that stores a program for causing a device to execute one of the above-described substrate processing methods.

A substrate processing apparatus according to an aspect of the present disclosure includes a holding part that holds a substrate on which a resist film formed on the surface of the exposed state by i-line, a developer supply part that supplies a developing solution to the surface of the substrate held in the holding part, and , an adjustment liquid supply unit that supplies an adjustment liquid for suppressing the progress of development to the peripheral edge area of the substrate surface held in the holding unit, and a control unit that controls the holding unit, the developer supply unit, and the adjustment liquid supply unit. The control unit supplies the developer solution to the surface of the substrate by the developer supply unit to form a liquid film of the developer solution on the surface of the substrate, and supplies the liquid film of the developer solution to the surface of the substrate by the holding unit to advance development on the surface of the substrate. While the development is progressing by maintaining the liquid film of the developer, the adjustment solution is supplied to the peripheral edge area by the adjustment solution supply unit to adjust the degree of development between the peripheral edge area and the inner area inside the peripheral edge area. Execute what you supply.

When developing a resist film that has been exposed to i-line, a difference in the degree of development is likely to appear due to a temperature difference between the peripheral edge area and the internal area within the substrate surface. In the above-mentioned substrate processing apparatus, while development is in progress, an adjustment liquid for suppressing the progress of development is supplied to the peripheral edge area of the surface. Accordingly, the degree of phenomenon is adjusted between the peripheral edge area and the internal area inside the peripheral edge area. Since the line width changes depending on the degree of development, the line width can be adjusted by supplying the adjustment liquid to the peripheral edge area. Even when using a resist film that reacts to i-lines, the line width distribution within the substrate plane can be easily adjusted.

The holding portion may be capable of holding the substrate while rotating it. The developer supply unit has a developing nozzle capable of discharging the developing solution into a discharge area extending in one direction along the surface of the substrate, and a drive unit that moves the developing nozzle along the surface of the substrate and along a movement direction intersecting the discharge area. Even if it is, it’s okay. When supplying a developer to a substrate, the control unit discharges the developer from the developing nozzle while moving the developing nozzle along the moving direction by the driving unit and rotating the substrate by the holding unit, and moves the developing nozzle along the moving direction. When moving, the developing nozzle may be moved by the driving unit so that the discharge area moves from the end of the substrate surface toward the central area including the center of the substrate surface. In this case, similar to the above substrate processing method, line width uniformity within the substrate plane can be improved.

The holding portion may be capable of holding the substrate while rotating it. When maintaining the liquid film of the developer, the control unit accelerates the rotation of the substrate to a predetermined rotation speed by the holding unit before supplying the adjustment liquid by the developer supply unit, and rotates at the predetermined rotation speed when supplying the adjustment liquid. The adjustment liquid may be supplied by the adjustment liquid supply unit to the peripheral edge area of the substrate being treated. In this case, similar to the above substrate processing method, line width adjustment between the peripheral edge area and the inner area becomes easier.

After stopping the supply of the adjustment liquid, the control unit may have the holding unit continue to maintain the liquid film of the developer solution in order to advance development on the surface of the substrate. In this case, as in the above substrate processing method, compared to the case where development is stopped immediately after supplying the adjustment liquid, the effect of suppressing development by the adjustment liquid is likely to be exhibited.

When supplying the adjustment liquid to the peripheral edge area, the control unit does not supply the adjustment liquid at the front end of the period for maintaining the liquid film of the developer on the surface of the substrate, and supplies the adjustment liquid by the developer supply unit at least part of the rear end of the period. You may do so. In this case, similar to the above substrate processing method, it is possible to adjust the in-plane line width distribution while proceeding with development in the peripheral edge area.

The substrate processing apparatus may further include a gas supply unit that supplies gas to the surface of the substrate. The control unit may control the gas supply unit to supply gas to the surface of the substrate to an extent that the surface of the substrate is not exposed while the development is progressing by maintaining the liquid film of the developer. In this case, similar to the above substrate processing method, it is possible to suppress the decline in line width uniformity due to temperature difference within the substrate surface.

When supplying gas to the surface of the substrate, the control unit may supply gas to the internal region through the gas supply unit. In this case, similar to the above substrate processing method, it is possible to further suppress the decline in line width uniformity due to temperature difference within the substrate surface.

After supplying the gas to the surface of the substrate by the gas supply unit, the control unit may supply the adjustment liquid to the peripheral edge area by the adjustment liquid supply unit. In this case, as with the above substrate processing method, it is possible to achieve both efficient gas supply and line width adjustment.

Hereinafter, embodiments will be described in detail with reference to the drawings. In the description, identical elements or elements with the same function are given the same symbol and redundant description is omitted. Some drawings show a Cartesian coordinate system defined by the X, Y, and Z axes. In the following embodiments, the Z-axis corresponds to the vertical direction, and the X-axis and Y-axis correspond to the horizontal direction.

[First Embodiment]

First, a substrate processing system according to the first embodiment will be described with reference to FIGS. 1 to 20. The substrate processing system 1 (substrate processing apparatus) shown in FIG. 1 is a system that performs formation of a photosensitive film on a work W, exposure of the photosensitive film, and development of the photosensitive film. The work W to be processed is, for example, a substrate or a substrate on which a film or circuit has been formed by performing a predetermined process. The substrate is, for example, a silicon wafer. The work W (substrate) may be circular. The work W may be a glass substrate, a mask substrate, or an FPD (Flat Panel Display). When a bevel (fillet) exists at the edge of the work W, the “surface” of the work W in the present disclosure also includes the bevel portion when viewed from the surface side of the work W. The photosensitive film is, for example, a resist film.

As shown in FIGS. 1 and 2, the substrate processing system 1 includes a coating and developing device 2, an exposure device 3, and a control device 100. The exposure device 3 is a device that exposes a resist film (photosensitive film) formed on the work W (substrate). Specifically, the exposure apparatus 3 irradiates energy lines to the exposure target portion of the resist film by a method such as liquid immersion exposure. Energy rays may be, for example, ionizing radiation or non-ionizing radiation.

Ionizing radiation is radiation that has sufficient energy to ionize atoms or molecules. Ionizing radiation may be, for example, extreme ultraviolet (EUV) rays, electron beams, ion beams, X-rays, α-rays, β-rays, γ-rays, baryon rays, and proton rays. Non-ionizing radiation is radiation that does not have sufficient energy to ionize atoms or molecules. Non-ionizing radiation may be, for example, g-ray, i-ray, KrF excimer laser, ArF excimer laser, F2 excimer laser, etc. Below, a case where i-line is used as an exposure energy line will be exemplified.

The coating and developing device 2 applies a resist (chemical solution) to the surface of the work W before exposure processing by the exposure device 3 to form a resist film, and develops the resist film after the exposure processing. . The resist film before development is exposed to, for example, i-lines. That is, the i-line was selectively irradiated by the exposure device 3 to the exposed portion of the resist film before development. The coating and developing device 2 includes a carrier block 4, a processing block 5, and an interface block 6.

The carrier block 4 introduces the work W into the coating and developing device 2 and extracts the work W from the coating and developing device 2. For example, the carrier block 4 can support a plurality of carriers C for the work W, and has a built-in transport device A1 including a transfer arm. The carrier C accommodates several circular pieces W, for example. The transport device A1 takes out the work W from the carrier C and passes it to the processing block 5, and receives the work W from the processing block 5 and returns it to the carrier C. Processing block 5 has processing modules 11, 12, 13, 14.

The processing module 11 has a built-in liquid processing unit U1, a heat treatment unit U2, and a conveying device A3 that conveys the workpiece W to these units. The processing module 11 forms an underlayer film on the surface of the work W by using the liquid processing unit U1 and the heat processing unit U2. The liquid treatment unit U1 applies a treatment liquid for forming an underlayer film onto the work W. The heat treatment unit U2 performs various heat treatments accompanying the formation of the underlayer film.

The processing module 12 has a built-in liquid processing unit U1, a heat treatment unit U2, and a conveying device A3 that conveys the workpiece W to these units. The processing module 12 forms a resist film on the underlayer film using the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 applies a processing liquid for forming a resist film onto the underlayer film. The liquid processing unit U1 is a processing liquid for forming a resist film and applies a chemical liquid capable of forming a pattern by i-line exposure onto the underlayer film. The heat treatment unit U2 performs various heat treatments accompanying the formation of the resist film.

The processing module 13 has a built-in liquid processing unit U1, a heat treatment unit U2, and a conveying device A3 that conveys the workpiece W to these units. The processing module 13 forms an upper layer film on the resist film using the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 applies a processing liquid for forming an upper layer film onto the resist film. The heat treatment unit U2 performs various heat treatments accompanying the formation of the upper layer film.

The processing module 14 includes a developing unit U3, a heat treatment unit U4, and a conveying device A3 that conveys the workpiece W to these units. The processing module 14 performs development of the exposed resist film and heat treatment accompanying the development by the development unit U3 and the heat treatment unit U4. The developing unit U3 is a unit that performs liquid treatment (development processing) using a developing solution on the work W. The developing unit U3 forms a liquid film (puddle) of the developer on the surface of the work W by applying the developer on the surface of the work W that has been exposed.

The developing unit U3 develops the resist film by maintaining a liquid film of developer on the surface of the work W (e.g., stop development). At this time, since heat dissipation is easily promoted from the peripheral edge of the work W, a temperature difference may occur within the surface of the work W. In this case, there may be a difference in the progress of the phenomenon within the plane of the work W. In particular, when a resist film for i-line is used, in the case of a resist film formed by another chemical solution, the degree of development is determined within a few seconds after the developer film is formed, whereas development is performed at an approximately constant rate while the developer film is maintained. This tends to continue. Therefore, when a resist film for i-line is used, differences in the degree of development due to temperature differences are likely to appear. Specifically, because the temperature is low in the peripheral edge area, the phenomenon progresses further, and the line width in the peripheral edge area may become thinner. In contrast, in the substrate processing system 1, the degree of development within the surface of the workpiece W is adjusted. A method of adjusting the degree of development within the plane of the work W will be described later.

After developing with a developing solution, the developing unit U3 washes away the developing solution on the surface of the work W with a rinsing solution. The heat treatment unit U4 performs various heat treatments accompanying development processing. Specific examples of heat treatment include heat treatment before development (PEB: Post Exposure Bake) and heat treatment after development (PB: Post Bake).

A shelf unit U10 is provided on the carrier block 4 side within the processing block 5. The shelf unit U10 is divided into a plurality of cells arranged side by side in the vertical direction. A transport device A7 including a lifting arm is installed near the shelf unit U10. The transport device A7 elevates the work W between the cells of the shelving unit U10.

A shelf unit U11 is provided on the interface block 6 side within the processing block 5. The shelf unit U11 is divided into a plurality of cells lined up in the vertical direction.

The interface block 6 transfers the work W to and from the exposure apparatus 3. For example, the interface block 6 has a built-in transfer device A8 including a transfer arm and is connected to the exposure device 3. The transport device A8 transfers the work W placed on the shelf unit U11 to the exposure device 3. The transport device A8 receives the work W from the exposure device 3 and returns it to the shelf unit U11.

The control device 100 is configured to partially and entirely control the coating and developing device 2. The control device 100 controls the coating and developing device 2 to perform coating and developing processing in the following procedures, for example. First, the control device 100 controls the conveying device A1 to convey the work W in the carrier C to the shelf unit U10, and transfers the work W to the cell for the processing module 11. Control the transfer device A7 to place it.

Next, the control device 100 controls the conveying device A3 to convey the workpiece W of the shelf unit U10 to the liquid treatment unit U1 and the heat treatment unit U2 in the processing module 11. Additionally, the control device 100 controls the liquid treatment unit U1 and the heat treatment unit U2 to form an underlayer film on the surface of the work W. Thereafter, the control device 100 controls the transfer device A3 to return the work W on which the underlayer film has been formed to the lathe unit U10, and places the work W in the cell for the processing module 12. Control the transfer device A7 to do this.

Next, the control device 100 controls the conveying device A3 to convey the workpiece W of the shelf unit U10 to the liquid treatment unit U1 and the heat treatment unit U2 in the processing module 12. Additionally, the control device 100 controls the liquid treatment unit U1 and the heat treatment unit U2 to form a resist film on the surface of the work W. Thereafter, the control device 100 controls the conveyance device A3 to return the work W to the shelf unit U10 and to place the work W in the cell for the processing module 13. Control (A7).

Next, the control device 100 controls the conveying device A3 to convey the workpiece W of the shelf unit U10 to each unit in the processing module 13. Additionally, the control device 100 controls the liquid treatment unit U1 and the heat treatment unit U2 to form an upper layer film on the resist film of the work W. Thereafter, the control device 100 controls the conveying device A3 to convey the work W to the lathe unit U11.

Next, the control device 100 controls the conveyance device A8 to deliver the work W of the shelf unit U11 to the exposure device 3. Thereafter, the control device 100 receives the work W on which exposure processing using the i-line has been performed from the exposure device 3 and places it in the cell for the processing module 14 in the shelf unit U11. Control the transfer device (A8).

Next, the control device 100 controls the conveying device A3 to convey the work W of the shelf unit U11 to each unit in the processing module 14, and develops the resist film of the work W. The developing unit U3 and the heat treatment unit U4 are controlled to perform this operation. By developing the resist film, a resist pattern is formed on the surface Wa of the work W.

Thereafter, the control device 100 controls the conveying device A3 to return the work W to the lathe unit U10, and controls the conveying device A7 and the conveying device A7 to return the work W to the carrier C. Control the transfer device (A1). As described above, the application and development process for one workpiece W is completed. The control device 100 causes the coating and developing device 2 to perform the coating and developing process for each of the subsequent plurality of works W in the same manner as described above.

Additionally, the specific configuration of the substrate processing apparatus is not limited to the configuration of the substrate processing system 1 illustrated above. The substrate processing apparatus may be any device as long as it is provided with a developing unit that performs development processing on a substrate on which a resist film has been formed and a control device that can control this.

(Development Unit)

Next, the development unit U3 of the processing module 14 will be described in detail with reference to FIGS. 3 and 4. For example, as shown in FIG. 3, the developing unit U3 includes a housing H, a rotation holding portion 20, a developer supply portion 30, an adjustment fluid supply portion 40, a cover member 70, and a blower B. has The housing H accommodates the rotation holding part 20, the developer supply part 30, the adjustment solution supply part 40, the cover member 70, and the blower B.

The rotation holding portion 20 (holding portion) holds the workpiece W and rotates it. The rotation holding portion 20 can maintain the workpiece W while rotating it. The rotation holding part 20 includes, for example, a rotation driving part 22, a shaft 24, and a holding part 26. The rotation drive unit 22 operates based on a signal from the control device 100 to rotate the shaft 24. The rotation drive unit 22 includes a power source such as an electric motor, for example. The holding portion 26 is installed at the distal end of the shaft 24. A work W is disposed on the holding portion 26. The holding portion 26 holds the work W approximately horizontally, for example, by suction or the like. The rotation holding portion 20 rotates the work W around a central axis (rotation axis) perpendicular to the surface Wa of the work W while the work W is in a substantially horizontal state. The holding portion 26 may hold the workpiece W so that the rotation axis approximately coincides with the center CP of the workpiece W.

The developer supply unit 30 supplies a predetermined chemical solution to the surface Wa of the work W held by the rotation holding unit 20 (holding unit 26). The chemical solution supplied by the developer supply unit 30 is the developer solution (L1). The developer L1 is a chemical solution for developing the resist film (hereinafter referred to as “resist film R”) formed on the surface Wa of the work W. In the present disclosure, supplying a fluid such as liquid or gas (e.g., developer L1) to the surface Wa of the work W is performed by applying a resist film or a liquid film formed on the surface Wa. This corresponds to contacting the above fluid.

The developer supply unit 30 includes, for example, a liquid delivery unit 32, a drive unit 34, and a developing nozzle 36. Based on a signal from the control device 100, the liquid delivery unit 32 transfers the developer L1 stored in a container (not shown) to the developing nozzle 36 by a pump or the like (not shown). Transmit. The drive unit 34 moves the developing nozzle 36 at least in a direction (horizontal direction) along the surface Wa of the work W, based on a signal from the control device 100.

The developing nozzle 36 discharges the developer L1 supplied from the liquid delivery unit 32 toward the surface Wa of the work W. The developing nozzle 36 may be capable of discharging the developer L1 to an area extending in one direction along the surface Wa of the work W (hereinafter referred to as “discharge area DA”). The developing nozzle 36 includes a plurality of discharge ports 36a, for example, as shown in FIG. 4(a). The plurality of discharge ports 36a are lined up in one horizontal direction (for example, the X-axis direction shown). When the developer L1 discharged from each of the plurality of discharge ports 36a reaches the surface Wa of the work W, the adhesion areas of the developer L1 from each of the plurality of discharge ports 36a are lined up in one direction. line up The discharge area DA by the developing nozzle 36 is formed by a plurality of attachment areas lined up in one direction.

As shown in FIG. 4(b), the developing nozzle 36 has the discharge area DA overlapping the center CP of the work W in the direction in which the plurality of discharge ports 36a are lined up. It is arranged as follows. The central position of the developing nozzle 36 in the longitudinal direction may be substantially coincident with the center CP in the direction in which the plurality of discharge ports 36a are lined up. Alternatively, the central position of the development nozzle 36 in the longitudinal direction may be offset with respect to the center CP in the direction in which the plurality of discharge ports 36a are lined up. The length of the development nozzle 36 in the longitudinal direction may be shorter than the diameter of the workpiece W. The length of the discharge area DA in the extension direction may be approximately equal to the length of the developing nozzle 36 in the longitudinal direction.

The drive unit 34 may move the developing nozzle 36 along a direction that intersects the discharge area DA of the developing nozzle 36 (hereinafter referred to as “moving direction”). In one example, the drive unit 34 moves the discharge area DA between the central area CA including the center CP and the peripheral edge Wb (end) of the surface Wa of the work W, The developing nozzle 36 is moved along the moving direction (Y-axis direction shown). The developing nozzle 36 may be directed vertically downward or diagonally downward to discharge the developer L1. FIG. 4(b) illustrates a case where the discharge direction of the developer L1 from the developing nozzle 36 is obliquely downward.

Returning to FIG. 3, the adjustment liquid supply unit 40 supplies a predetermined liquid to the peripheral edge area of the surface Wa of the work W held by the rotation holding unit 20 (holding unit 26). The liquid supplied by the adjustment liquid supply unit 40 is the adjustment liquid L2. The adjustment liquid L2 is a liquid for suppressing the development of the resist film R by the developer L1. When the adjuster L2 is added to the developer L1, the progress of development by the developer L1 is reduced (inhibited) compared to the case where the adjuster L2 is not added.

The peripheral edge area of the surface Wa of the work W is an area including the peripheral edge Wb of the surface Wa and its vicinity. When the workpiece W is circular, the peripheral edge area is, for example, between the peripheral edge Wb and a circle located about 1/5 to 1/15 of the radius of the workpiece W from the peripheral edge Wb. It is a fantasy realm. In this case, the inner diameter of the peripheral edge area is approximately 4/5 to 14/15 of the radius of the work W. Hereinafter, the peripheral edge area is referred to as “peripheral edge area Wc”, and the area other than the peripheral edge area Wc on the surface Wa and the area located inside the peripheral edge area Wc is referred to as “inner.” Area (Wd)” (see Figure 4(b)).

The adjustment liquid L2 supplied by the adjustment liquid supply unit 40 may be of any type as long as it does not advance the development of the resist film R. Specific examples of the adjustment liquid (L2) include water (eg, pure water). When the type of adjustment liquid L2 is water, the adjustment liquid L2 may be used as a rinse liquid for washing away the developer L1 on the surface Wa of the work W. In this case, the adjustment solution supply unit 40 has a function of supplying a rinse solution to the surface Wa of the work W to which the developer L1 has been supplied.

The adjustment liquid supply unit 40 has, for example, liquid delivery units 42A and 42B, a drive unit 44, and an adjustment nozzle 46. Based on a signal from the control device 100, the liquid delivery units 42A and 42B supply the adjustment liquid L2 stored in a container (not shown) to the adjustment nozzle 46 using a pump or the like (not shown). ) is sent to When the adjustment liquid L2 is supplied to the peripheral edge area Wc of the surface Wa, the adjustment liquid L2 is supplied to the adjustment nozzle 46 by the liquid delivery unit 42A. When the adjustment liquid L2 is used as a rinse liquid, the adjustment liquid L2 is supplied to the adjustment nozzle 46 by the liquid delivery unit 42B.

The flow rate (flow rate per unit time) of the adjustment liquid L2 delivered by the liquid delivery unit 42A may be smaller than the flow rate (flow rate per unit time) of the adjustment liquid L2 delivered by the liquid delivery unit 42B. The drive unit 44 moves the adjustment nozzle 46 at least in the direction along the surface Wa of the work W (horizontal direction) based on a signal from the control device 100. By the drive unit 44, for example, the adjustment nozzle 46 can be moved to a position opposite the peripheral edge area Wc and a position opposite the center CP of the surface Wa.

The adjustment nozzle 46 discharges the adjustment liquid L2 supplied from the liquid delivery unit 42A or the liquid delivery unit 42B toward the surface Wa of the work W on the holding unit 26. The adjustment nozzle 46 may include a single outlet. The adjustment liquid L2 discharged from the adjustment nozzle 46 adheres to the surface Wa at a location where it overlaps the surface Wa. In one example, the adjustment nozzle 46 is disposed above the surface Wa of the work W and then discharges the adjustment liquid L2 vertically downward.

A cover member 70 is provided around the rotation holding portion 20. The cover member 70 includes, for example, a cup body 72, a drain port 74, and an exhaust port 76. The cup body 72 functions as a liquid collection container that receives the developer L1 and the adjuster L2 supplied to the work W for processing the work W. The drain port 74 is formed at the bottom of the cup main body 72 and discharges the drained liquid collected by the cup main body 72 to the outside of the developing unit U3. The exhaust port 76 is formed at the bottom of the cup body 72.

The developing unit U3 has exhaust portions V1 and V2. The exhaust unit V1 is provided at the lower part of the housing H and operates based on a signal from the control device 100 to exhaust the gas in the housing H. The exhaust unit V1 may be, for example, a damper that can adjust the exhaust volume according to the degree of opening. By controlling the amount of exhaust from the housing (H) by the exhaust unit (V1), the temperature, pressure, and humidity inside the housing (H) can be controlled. The exhaust unit V1 may be controlled to always exhaust the inside of the housing H during liquid processing on the work W.

The exhaust unit V2 is provided in the exhaust port 76 and operates based on a signal from the control device 100 to exhaust the gas in the cup body 72. The downward flow (downflow) flowing around the workpiece W is discharged to the outside of the housing H of the developing unit U3 through the exhaust port 76 and the exhaust portion V2. The exhaust unit V2 may be, for example, a damper that can adjust the exhaust volume according to the degree of opening. By controlling the amount of exhaust air from the cup body 72 by the exhaust unit V2, the temperature, pressure, and humidity inside the cup body 72 can be controlled.

The blower B is disposed above the rotation holding portion 20 and the cover member 70 inside the housing H of the developing unit U3. The blower B forms a downward flow toward the cover member 70 based on a signal from the control device 100. The blower B may be controlled to always form a downward flow during the liquid treatment of the work W.

(controller)

As shown in FIG. 2, the control device 100 has a storage unit 102 and a control unit 104 as functional components. The storage unit 102 stores a program for operating each part of the coating and developing device 2 including the developing unit U3. The storage unit 102 also stores various data (for example, information related to signals for operating the developing unit U3) and information from sensors installed in each unit. The storage unit 102 is, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk. The program may also be included in an external storage device separate from the storage unit 102 or in an intangible medium such as a radio signal. The program may be installed into the storage unit 102 from these other media and the program may be stored in the storage unit 102.

The control unit 104 controls the operation of each part of the coating and developing device 2 based on the program read from the storage unit 102. The control unit 104 supplies the developer L1 to the surface Wa of the work W through the developer supply unit 30 to form a liquid film of the developer L1 on at least the surface Wa of the work W. and holding (holding) the liquid film of the developer L1 on the surface Wa of the work W by the rotation holding portion 20 to advance development on the surface Wa of the work W. It is configured to execute. Additionally, the control unit 104 adjusts the degree of development (development level) between the peripheral edge area Wc and the inner area Wd while advancing development by maintaining the liquid film of the developer L1. It is configured to further supply the adjustment liquid to (Wc) by the adjustment liquid supply unit 40.

The control device 100 is comprised of one or more control computers. For example, the control device 100 has a circuit 120 shown in FIG. 5. The circuit 120 has one or more processors 122, memory 124, storage 126, input/output port 128, and timer 132. The storage 126 has a storage medium that can be read by a computer, such as a hard disk. The storage medium stores a program for causing the control device 100 to execute a substrate processing method described later. The storage medium may be a removable medium such as a non-volatile semiconductor memory, magnetic disk, or optical disk. The memory 124 temporarily stores the program loaded from the storage medium of the storage 126 and the results of calculations by the processor 122.

Processor 122 cooperates with memory 124 to execute the program. The input/output port 128 connects the rotation holding unit 20, the developer supply unit 30, the conditioner supply unit 40, the exhaust units V1 and V2, and the blower B, etc., according to commands from the processor 122. Inputs and outputs electrical signals between devices. The timer 132 measures elapsed time by, for example, counting reference pulses of a certain period. Additionally, the hardware configuration of the control device 100 may be comprised of a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) integrating the logic circuit.

(Substrate processing method)

Next, referring to FIGS. 6 to 12, a liquid processing method performed on one workpiece W in the developing unit U3 will be described as an example of a substrate processing method. FIG. 6 is a flowchart showing an example of a liquid processing method performed in the development unit U3. In this liquid processing method, the control unit 104 of the control device 100 sequentially performs steps S01, S03, and S05 while the workpiece W to be processed is held in the holding unit 26 of the rotation holding unit 20. Run.

In step S01, for example, the control unit 104 causes the developing unit U3 to perform a process of forming a liquid film of the developer L1 on the surface Wa of the work W, as shown in FIG. 7(a). . In step S03, for example, the control unit 104 causes the development unit U3 to perform processing for maintaining the liquid film of the developer L1 on the surface Wa to advance development on the resist film R. FIG. 7(b) illustrates a state in which a liquid film of the developer L1 is maintained on the surface Wa. In step S05, for example, the control unit 104 executes a process including supplying the adjustment liquid L2 as a rinse liquid and drying the surface Wa to the developing unit U3 in order to remove the liquid film of the developing liquid L1. I order it. Hereinafter, the processing steps S01, S03, and S05 will be described in detail.

FIG. 8 is a flowchart showing an example of the process for forming a liquid film of the developer L1 in step S01. In this liquid film forming process, the developing nozzle 36 of the developer supply unit 30 is disposed outside the work W, and the work W is disposed on the holding portion 26 of the rotation holding portion 20. The control unit 104 executes step S11. In step S11, for example, the control unit 104 controls the rotation holding unit 20 to start rotating the workpiece W. After the work W starts to rotate, the control unit 104 may control the rotation holding unit 20 so that the work W rotates at a predetermined rotation speed ω1. The rotational speed ω1 is stored in advance in the storage unit 102 and is set to, for example, about 500 rpm to 1500 rpm.

Next, the control unit 104 executes step S12. In step S12, for example, the control unit 104 causes the drive unit 34 of the developer supply unit 30 to start movement along the surface Wa of the developing nozzle 36. In one example, after the start of step S12, the control unit 104 causes the drive unit 34 to adjust the discharge area DA by the developing nozzle 36 from the peripheral edge Wb (end of the surface Wa) to the center ( The developing nozzle 36 is moved along a moving direction intersecting the discharge area DA so as to move toward the central area CA including CP). Below, a case in which the developing nozzle 36 is moved at a constant speed will be exemplified. The developing nozzle 36 may discharge the developer L1 in a vertically oblique direction so that the developing nozzle 36 has a component opposite to the moving direction.

Next, the control unit 104 executes steps S13 and S14. In step S13, for example, the control unit 104 waits until a predetermined ejection start timing. The discharge start timing is set in advance, for example, the timing at which a portion of the discharge area DA reaches the peripheral edge Wb after the development nozzle 36 disposed at the standby position before movement starts to move (reference time) time from). In step S14, for example, the control unit 104 causes the developing solution supply unit 30 to start discharging from the developing nozzle 36. Accordingly, as shown in FIGS. 9(a) and 9(b), while the work W is rotating at the rotational speed ω1, the developer L1 is supplied near the peripheral edge Wb. It starts to happen. Then, in the peripheral edge area Wc of the surface Wa and its vicinity, the developer L1 is gradually supplied and spreads over the surface Wa.

Next, the control unit 104 executes step S15. In step S15, for example, the control unit 104 waits until the discharge area DA by the development nozzle 36 reaches the first position. The first position is predetermined at a predetermined position on the moving line of the developing nozzle 36, and is centered at a distance shorter than the radius of the work W from the peripheral edge Wb where the discharge area DA first overlaps. It is set in a position close to CP). In one example, the control unit 104 determines that the discharge area DA has reached the first position when the time corresponding to the first position has elapsed from the start of movement of the developing nozzle 36 (step S12).

Next, the control unit 104 executes step S16. In step S16, for example, the control unit 104 reduces the rotation speed of the work W by using the rotation holding unit 20. The control unit 104 may control the rotation holding unit 20 so that the work W rotates at a predetermined rotation speed ω2 that is smaller than the rotation speed ω1. The rotation speed ω2 is stored in advance in the storage unit 102 and is set to, for example, about 250 rpm to 750 rpm. After execution of step S16, as shown in FIG. 9(c), the discharge area DA by the developing nozzle 36 approaches the center CP, and the developing solution L1 is located inside the peripheral edge area Wc. ) is supplied and spreads over the surface (Wa).

Next, the control unit 104 executes step S17. In step S17, for example, the control unit 104 waits until the discharge area DA by the development nozzle 36 reaches the second position. The second position is predetermined at a predetermined position on the movement line of the developing nozzle 36, and is set at a position closer to the center CP than the first position. In one example, the control unit 104 determines that the discharge area DA has reached the second position when the time corresponding to the second position has elapsed from the start of movement of the development nozzle 36 (step S12).

Next, the control unit 104 executes step S18. In step S18, for example, the control unit 104 reduces the rotation speed of the work W by using the rotation holding unit 20. The control unit 104 may control the rotation holding unit 20 so that the work W rotates at a predetermined rotation speed ω3 that is smaller than the rotation speed ω2. The rotational speed ω3 is stored in advance in the storage unit 102 and is set to, for example, about 10 rpm to 100 rpm. After execution of step S17, as shown in FIG. 9(d), the discharge area DA by the developing nozzle 36 becomes closer to the center CP, and the developing solution L1 is discharged in the area near the center CP. ) is supplied and spreads over the surface (Wa).

Next, the control unit 104 executes step S19. In step S19, for example, the process waits until the discharge area DA by the developing nozzle 36 reaches the target position. The target position is predetermined at a predetermined position on the moving line of the developing nozzle 36, and is set at any position within the central area CA including the center CP and its vicinity. The target position may be set in the center area CA at a position closer to the movement start position of the developing nozzle 36 than the center CP, or may be set at a position approximately coincident with the center CP, or in the center area ( In CA), it may be set at a position further away from the movement start position of the developing nozzle 36 than the center CP. The target position is set so that the developer L1 spreads throughout the central area CA including the center CP. The central area CA is, for example, defined as a circle with a radius of approximately 1/15 to 1/10 of the radius of the work W based on the center CP.

Next, the control unit 104 executes steps S20 and S21. In step S20, for example, the control unit 104 stops the movement of the developing nozzle 36 by the driving unit 34 and stops the discharge of the developer L1 from the developing nozzle 36 by the developing solution supply unit 30. . In step S21, for example, the control unit 104 stops the rotation of the workpiece W by the rotation holding unit 20.

In the above steps S11 to S21, when supplying the developer L1 to the work W, the control unit 104 moves the developing nozzle 36 along the movement direction by the drive unit 34, while rotating the holding unit. The work W is rotated by (20) and the developing solution L1 is discharged from the developing nozzle 36. Then, the control unit 104 controls the developing solution L1 from the developing nozzle 36 in a state in which the discharge area DA by the developing nozzle 36 reaches the central area CA (target position within the area). ) is stopped in the developer supply unit 30. By performing the above processing, a liquid film (liquid pool) of the developer L1 is formed on the surface Wa of the work W, as shown in FIG. 9(d) or FIG. 7(b).

FIG. 10 is a flowchart showing an example of the process for maintaining the liquid film of the developer L1 in step S03. In the process for maintaining the liquid film, after the above-described series of processes in step S01 are completed (for example, without performing other processes immediately after step S21), the control unit 104 executes step S31. In step S31, for example, the control unit 104 waits until a predetermined rotation start timing. Accordingly, the liquid film of the developer L1 is maintained on the surface Wa in a state in which the work W is not rotated until the rotation start timing, as shown in FIG. 11(a).

By holding the developer L1 on the surface Wa, development of the resist film R progresses on the surface Wa. At this time, the control unit 104 may move the adjustment nozzle 46 by the drive unit 44 so that the adjustment nozzle 46 faces the peripheral edge area Wc of the surface Wa. The rotation start timing is predetermined, for example, set to the timing after 1/3 to 1/2 of the development period has elapsed from the start of the development period (period for maintaining the liquid film of developer L1) in step S03. do. In one example, the development period is set to about 30 to 180 seconds. The rotation start timing may be set to any timing after the development period. The phenomenon period consists of a front end and a back end. The front end of the phenomenon period means the 1/2 period before the half of the phenomenon period, and the rear end of the phenomenon period means the 1/2 period after the half of the phenomenon period. it means.

Next, the control unit 104 executes step S32. In step S32, for example, the control unit 104 starts rotation of the workpiece W by the rotation holding unit 20. After the work W starts rotating, the control unit 104 may control the rotation holding unit 20 so that the work W rotates at a predetermined rotation speed ω4. The rotational speed ω4 is previously stored in the storage unit 102, and is set to a speed that can maintain (without breaking down) the liquid film of the developer L1 on the surface Wa. The rotation speed (ω4) may be 5 rpm to 35 rpm, 10 rpm to 30 rpm, or 15 rpm to 25 rpm.

Next, the control unit 104 executes step S33. In step S33, for example, the control unit 104 waits until the supply start timing (start timing). The supply start timing is set to a timing that adds a predetermined time to the rotation start timing, and the rotation of the work W is set so that the rotation speed ω4 is reached at the supply start timing. The supply start timing, like the rotation start timing, may be set to any timing after the development period. For example, when the development period is set to 100 seconds, the supply start timing may be set to 50 seconds after the start of the development period.

Next, the control unit 104 executes step S34. In step S34, for example, the control unit 104 starts supplying the adjustment liquid L2 by the adjustment liquid supply unit 40 to the peripheral edge area Wc of the surface Wa of the work W. Accordingly, as shown in FIG. 11(b), while the workpiece W rotates at the rotational speed ω4, the adjustment liquid L2 is discharged from the adjustment nozzle 46 to the peripheral edge area Wc. As a result, the developer L1 is supplied to the peripheral edge area of the liquid film of the developer L1 (the area corresponding to the peripheral edge area Wc of the liquid film), and the adjustment solution ( L2) is mixed. At this time, the conditioner L2 is not mixed with the developer L1 in the inner region of the liquid film of the developer L1 (the region corresponding to the inner region Wd of the liquid film).

Next, the control unit 104 executes steps S35 and S36. In step S35, for example, the control unit 104 waits until the supply stop timing. In step S36, for example, the control unit 104 stops supply of the adjustment liquid L2 by the adjustment liquid supply unit 40. The supply stop timing is set such that a target amount of adjustment liquid L2 is supplied to the peripheral edge area Wc after the adjustment liquid L2 begins to be supplied to the peripheral edge area Wc. For example, the supply stop timing is set so that the supply time of the adjustment liquid L2 to the peripheral edge area Wc is approximately 1/10 to 1/5 of the development period. In one example, the supply time of the adjustment liquid L2 to the peripheral edge area Wc is on the order of several seconds to tens of seconds. Even while the adjustment liquid L2 is being supplied, a liquid film of the developer L1 is maintained on the surface Wa of the work W.

Next, the control unit 104 executes step S37. In step S37, for example, the control unit 104 stops the rotation of the workpiece W by the rotation holding unit 20. Accordingly, as shown in FIG. 12(a), the liquid film of the developer L1 is maintained on the surface Wa while the rotation of the work W is stopped. As a result, development of the resist film R by the developer L1 progresses further. At this time, unlike before the adjustment liquid L2 is supplied, since the adjustment liquid L2 is supplied to the peripheral edge area Wc, the peripheral edge area Wc and the area located inside the peripheral edge area Wc The progress of the phenomenon is different between the phosphorus inner region (Wd) and the other. Specifically, the development in the peripheral edge area Wc does not progress compared to the development in the inner area Wd (the degree of development in the peripheral edge area Wc is smaller than that in the inner area Wd). lose).

Next, the control unit 104 executes step S38. In step S38, for example, the control unit 104 waits until the development completion timing. The development completion timing is set in advance according to the development period for performing development in step S03. By carrying out the series of processes of steps S31 to S38 above, development of the resist film R is performed. By supplying the adjustment liquid L2 to the peripheral area Wc from the adjustment liquid supply unit 40, the degree of development is adjusted between the peripheral area Wc and the inner area Wd. For example, the control unit 104 supplies the adjustment liquid to the peripheral edge area Wc by the adjustment liquid supply unit 40 to reduce the difference in development level due to the temperature difference between the peripheral edge area Wc and the inner area Wd. (L2) is supplied.

In the series of processes described above, the control unit 104 starts holding the liquid film of the adjustment liquid L2 by the rotation holding unit 20 (after starting step S03) and before supplying the adjustment liquid L2 (step S03). (Before S34), the workpiece W is accelerated to the rotational speed ω4 by the rotation holding portion 20. Then, the control unit 104 supplies the adjustment liquid L2 by the adjustment liquid supply unit 40 to the peripheral edge area Wc of the workpiece W being rotated at the rotational speed ω4. In this way, the rotational speed (rotational speed ω4) of the workpiece W in the period in which the adjustment liquid L2 is supplied is the period in which the adjustment liquid L2 is not supplied (excluding the period for changing the rotational speed). ) is greater than the rotation speed of the work (W). In addition, as described above, when the rotation of the work W is stopped and a stopping phenomenon is performed, the rotation speed of the work W in the period in which the adjustment liquid L2 is not supplied is zero.

In the above-described series of processes, after stopping the supply of the adjustment liquid L2, the control unit 104 uses the rotation holding unit 20 to apply the developing solution ( It continues to maintain the liquid film of L1). The control unit 104 controls the rotation holding unit 20 to place the liquid film of the developer L1 on the surface Wa of the work W during a predetermined development period corresponding to the period from the start to the end of step S03. ), thereby advancing the development of the resist film R.

In the series of processes described above, the control unit 104 operates the adjustment liquid supply unit 40 so that the time for supplying the adjustment liquid L2 at the rear end of the development period is longer than the time for supplying the adjustment liquid L2 at the front end of the development period. The adjustment liquid (L2) is supplied by . By setting the supply start timing to be at the rear of the development period, the control unit 104 does not supply the adjustment liquid L2 by the adjustment liquid supply unit 40 at the front of the development period. Then, the control unit 104 supplies the adjustment liquid L2 through the adjustment liquid supply unit 40 at least in part of the latter part of the development period. In this case, the time for supplying the adjustment liquid L2 at the front end of the development period becomes zero.

The supply start timing of the adjustment liquid L2 may be set at the beginning of the development period. The control unit 104 does not supply the adjustment liquid L2 for a certain period of time from the beginning of the front end so that the supply time at the rear end is longer than the supply time at the front end, but from a certain point in the front end to a certain point in the rear end. , the adjustment liquid L2 may be continuously supplied by the adjustment liquid supply unit 40. In the development period, the adjustment liquid L2 may be supplied two or more times. In this case, the control unit 104 supplies the adjustment liquid L2 two or more times by the adjustment liquid supply unit 40 so that the supply time of the adjustment liquid L2 at the rear end is longer than the supply time at the front end. It's also good. The control unit 104 operates the adjustment liquid supply unit 40 twice so that the ratio occupied by the supply time of the adjustment liquid L2 in the rear stage is larger than the ratio occupied by the supply time of the adjustment liquid L2 in the front stage. The above adjustment liquid L2 may be supplied.

After the series of processes of steps S31 to S38 above, the control unit 104 executes step S05 described above. In step S05, for example, in a state in which the control unit 104 rotates the work W by the rotation holding unit 20 as shown in FIG. 12(b), the center (a) of the surface Wa of the work W is The adjustment liquid L2 (rinse liquid) is discharged from the adjustment nozzle 46 toward CP). Accordingly, on the surface Wa of the work W, the liquid film of the developer L1 is replaced with a liquid film of the conditioner liquid L2. Then, after stopping the discharge of the adjustment liquid L2, the control unit 104 dries the surface Wa of the work W by rotating the work W (adjusting liquid L2 from the surface Wa). remove it). With the above, the liquid processing performed on one workpiece W in the development unit U3 ends.

Additionally, the series of processing described above is an example and can be changed as appropriate. In the above series of processes, the control unit 104 may execute one step and the next step in parallel, or may execute each step in a different procedure from the above-described example. The control unit 104 may omit any step or may perform processing different from the example described above in any one step.

(Effect of embodiment)

The substrate processing method according to the above embodiment includes supplying developer L1 to the surface Wa of the work W so as to form a liquid film of the developer L1 on the surface Wa of the work W, and (W) maintaining the liquid film of the developer L1 on the surface Wa of the work W to advance development on the surface Wa, and advancing development by maintaining the liquid film of the developer L1 While the workpiece W is on the peripheral edge area Wc to adjust the degree of phenomenon between the peripheral edge area Wc of the surface Wa and the inner area Wd inside the peripheral edge area Wc. It includes supplying an adjustment liquid (L2) to suppress the progress of the phenomenon.

In this substrate processing method, while development is in progress, an adjustment liquid L2 for suppressing the development of development is supplied to the peripheral edge area Wc of the surface Wa. Accordingly, the degree of phenomenon is adjusted between the peripheral edge area Wc and the inner area Wd. Since the line width changes depending on the degree of development, the line width can be adjusted by supplying the developer L1 to the peripheral edge area Wc. As a result, it becomes possible to easily adjust the line width distribution within the work W surface.

In the above embodiment, the developer L1 is supplied by a developing nozzle 36 capable of discharging the developer L1 into the discharge area DA extending in one direction along the surface Wa of the work W. ) may be moved along a movement direction intersecting the discharge area DA, rotating the work W and discharging the developer L1 from the developing nozzle 36. Moving the developing nozzle 36 along the moving direction means that the discharge area DA includes the center of the work W surface Wa from the end (peripheral edge Wb) of the work W surface Wa. It may also include moving the development nozzle 36 to move toward the central area CA.

In this case, while the discharge area DA reaches the central area CA from the peripheral edge Wb of the work W, the developer L1 spreads over approximately the entire surface Wa. Since the moving distance of the developing nozzle 36 is small, the developer L1 can be spread out in a short period of time, and the difference in the degree of development due to the time difference of the liquid landing on the inside of the work W surface is reduced. As a result, line width uniformity within the work W surface can be improved. For example, by rotating the work W at a faster rotation speed and forming a liquid film of the developing liquid L1 by moving and discharging the developing nozzle 36, the time difference between liquid landing is further reduced. In this case, by increasing the rotation speed, the degree of temperature drop in the peripheral edge area Wc of the surface Wa can be increased, but in the above substrate processing method, by supplying the adjustment liquid L2 to the peripheral edge area Wc It is possible to suppress the progress of a phenomenon caused by a decrease in temperature. In this way, in the above substrate processing method, the influence of increasing the rotation speed can be suppressed while the decline in line width uniformity accompanying the time difference in liquid landing can be suppressed.

In the above embodiment, the resist film R in the state exposed by the i-line may be formed on the surface Wa of the work W before development with the developer L1 is performed. When developing the resist film R in the state exposed by the i-line, a difference in the degree of development is likely to appear due to a temperature difference between the peripheral edge area Wc and the peripheral edge Wb within the surface of the work W. In the above method, the degree of development in the peripheral area Wc is adjusted by supplying the adjustment liquid L2 to the peripheral area Wc. As a result, it is possible to adjust the difference in the degree of phenomenon due to the temperature difference. For example, as the temperature of the peripheral area Wc decreases compared to the temperature of the internal area Wd, the phenomenon progresses further and the line width in the peripheral area Wc becomes thinner. In the above substrate processing method, since the progress of the development is suppressed by supply of the adjustment liquid L2, the uniformity of the line width distribution within the surface of the work W can also be improved.

In the above embodiment, maintaining the liquid film of the developer L1 on the surface Wa of the work W includes accelerating the rotation of the work W to a predetermined rotation speed before supplying the adjustment liquid L2. It may also be included. Supplying the adjustment liquid L2 may include supplying the adjustment liquid L2 to the peripheral edge area Wc of the workpiece W being rotated at a predetermined rotation speed. In this case, the adjustment liquid L2 is supplied to the peripheral edge area Wc while centrifugal force is acting on the liquid film on the surface Wa due to the rotation of the workpiece W. Therefore, it is difficult for the adjustment liquid L2 that has reached the peripheral edge area Wc to move inward. As a result, line width adjustment between the peripheral edge area Wc and the inner area Wd becomes easier.

In the substrate processing method according to the above embodiment, after stopping the supply of the adjustment liquid L2, the liquid film of the developer L1 is maintained continuously in order to advance development on the surface Wa of the work W. good night. In this case, after stopping the supply of the adjustment liquid L2, development proceeds in a state in which the development in the peripheral edge area Wc is suppressed, compared to the case where development is stopped immediately after supply of the adjustment liquid L2. Therefore, it is easy to exert the effect of suppressing development by the adjustment liquid L2.

In the above embodiment, supplying the adjustment liquid L2 to the peripheral edge area Wc means that the adjustment liquid ( It may also include supplying the adjustment liquid L2 so that the time for supplying the adjustment liquid L2 is longer than the time for supplying the adjustment liquid L2) at the rear end of the above period. In this case, the development can be progressed to the target level even in the peripheral edge area Wc at the front end of the period in which the development is performed. Therefore, it is possible to adjust the in-plane line width distribution while advancing development in the peripheral edge area Wc. In addition, since most of the supply of the adjustment liquid L2 is performed at the latter part of the development process rather than at the beginning, the risk of excessively suppressing the development progress in the peripheral edge area Wc where the adjustment liquid L2 is supplied can be reduced. You can.

13(a) and 13(b) show measurement results of the line width distribution of the resist pattern on the surface Wa of the work W. Figure 13(a) shows the measurement results of the line width distribution when the adjustment liquid L2 is not supplied, and Figure 13(b) shows the line width distribution when the adjustment liquid L2 is supplied to the peripheral edge area Wc. The measurement results are shown. In Fig. 13(a) and Fig. 13(b), the deviation amount of the measurement result in terms of color density with respect to the average value of the entire line width within the plane is shown at each measurement site.

As shown in FIG. 13(a), when the adjustment liquid L2 is not supplied, the degree of development in the peripheral area Wc is greater than that in the inner region Wd due to the temperature difference. . Therefore, there is a noticeable tendency for the line width in the peripheral area Wc to be thinner than the line width in the inner area Wd. In addition, in the measurement results expressed in gray scale, there are parts with the same density in the peripheral area Wc and the internal area Wd, but the peripheral area Wc is deviated to the minus side with respect to the average value, In the inner area (Wd), it is deviated to the positive side with respect to the average value. In the measurement results shown in FIG. 13(a), the point where the measured value of the line width was the minimum was located in the peripheral edge area Wc, and the measured value was 48 nm smaller than the average value of the line width throughout the plane.

As shown in Fig. 13(b), when the adjustment liquid L2 is supplied to the peripheral area Wc, the progress of the phenomenon in the peripheral area Wc is suppressed by the adjustment liquid L2. Therefore, it can be seen that the acceleration of development in the peripheral area Wc due to the temperature drop is suppressed, and the difference in the degree of development between the peripheral area Wc and the inner area Wd is reduced. Compared to the measurement result shown in FIG. 13(a), in the measurement result shown in FIG. 13(b), the line width in the peripheral area Wc has a smaller tendency to be thinner than the line width in the inner area Wd. lost. In the measurement results shown in FIG. 13(b), the point where the measured value of the line width was the minimum was located in the peripheral edge area Wc, and the measured value was 31 nm smaller than the average value of the line width throughout the plane.

(Variation Example 1)

In the above-described example, the supply start timing for starting the supply of the adjustment liquid L2 was determined in advance, but the set value of the supply start timing may be changed after viewing the development results for the work W. Figure 14 shows the measurement results of the line width distribution when the supply start timing is varied in multiple stages. The measurement positions are set at a plurality of locations along the diameter along one direction on the surface Wa of the work W. The “measurement position (X)” on the horizontal axis represents measurement positions at 27 locations set at equal intervals along the diameter along one direction. The location where the measurement position (X) is 1 and the location where the measurement position (X) is 27 are located near both ends of the diameter (peripheral edge (Wb)). The measurement position (X) of 14 approximately coincides with the center (CP) of the surface Wa.

In the graph shown in FIG. 14, "t1" to "t4" indicate supply start timing, and the values increase in this order, and the start of supply of the adjustment liquid L2 follows this order. “Ref” is the result when the adjustment liquid (L2) is not supplied. From the measurement results shown in FIG. 14, it can be seen that the line width varies depending on the supply start timing of the adjustment liquid L2 in the peripheral area Wc. This characteristic is such that the period during which the development is allowed to proceed before supplying the adjustment liquid L2 and the period during which the development of the development is suppressed in the peripheral edge area Wc by the adjustment liquid L2 depend on the supply start timing. I think it's because of this.

In Figures 15(a) and 15(b), the change in line width relative to the supply start timing at one measurement position is shown. In FIG. 15(a), the measurement results at a measurement position (X) of 1 are shown, and in FIG. 15(b), the measurement results at a measurement position (X) of 27 are shown. “t1” is set to a certain timing during the current development period, and “t1” to “t4” increase the timing at equal intervals. From the measurement results in FIGS. 15(a) and 15(b), it can be seen that the line width changes approximately linearly with respect to the supply start timing. Using this relationship, the supply start timing may be adjusted to adjust the line width in the peripheral edge area Wc.

In one example, the control unit 104 may change the supply start timing in multiple stages and control the developing unit U3 to form a resist pattern on the test work W. In addition, the control unit 104 may acquire measured values of the line width of the resist pattern at each stage and construct a model representing the relationship between the supply start timing and the line width from these measured values for each position on the diameter in the peripheral edge area Wc. . The storage unit 102 may store the model.

Fig. 16 is a flowchart showing an example of processing for changing the set value of the supply start timing using a model built to represent the relationship between the supply start timing and the line width. In this processing, after the above-described steps S01, S03, and S05 are executed, the control unit 104 executes step S61. In step S61, for example, the control unit 104 acquires the line width distribution (measured value of the line width distribution) along the radial direction on the surface Wa of the work W after development. In one example, the control unit 104 acquires a linewidth distribution on a radius extending from the center CP to one of the peripheral edges Wb, or a linewidth distribution on a diameter extending in any one direction.

Next, the control unit 104 executes step S62. In step S62, for example, the control unit 104 acquires the shift amount between the line width distribution and the target distribution obtained in step S61, and then determines whether the shift amount is greater than a predetermined threshold. The target distribution is set so that the line width within the plane is uniform, for example. In this case, the line width in the target distribution is set to be a constant value at any location. In the linewidth distribution obtained in step S61, if the difference in linewidth between the peripheral edge area Wc and the inner area Wd increases, the amount of shift with respect to the target distribution increases, and if the difference in linewidth is small, the amount of shift with respect to the target distribution increases. It gets smaller.

In step S62, if the amount of deviation between the obtained line width distribution and the target distribution is greater than the threshold (step S62: YES), the control unit 104 executes step S63. In step S63, the supply start timing is calculated so that the deviation amount obtained in step S62 is reduced in the subsequent work W. Then, the control unit 104 sets (changes) the setting value of the supply start timing to the calculated value. Additionally, the control unit 104 may notify the operator or the like of the calculation result of the supply start timing and change the setting value of the supply start timing based on instructions from the operator or the like. Accordingly, when development is performed on the subsequent work W, the adjustment liquid L2 is supplied at the changed supply start timing.

On the other hand, in step S62, if the amount of deviation between the obtained line width distribution and the target distribution is less than or equal to the threshold value (step S62: NO), the control unit 104 ends the process without executing step S63. The control unit 104 may execute the series of processes of steps S61 to S63 (S62) described above each time steps S01, S03, and S05 are executed for one or multiple pieces of work W.

The substrate processing method according to this modification example 1 includes acquiring the line width distribution along the radial direction and the deviation amount of the target distribution on the surface Wa of the workpiece W after development, and starting the supply of the adjustment liquid L2. Based on the model constructed to represent the relationship between the supply start timing and the line width in the peripheral edge area Wc, and the obtained deviation amount, the supply start timing is calculated to reduce the deviation amount for the subsequent work Wc. You may include more. In this case, since the timing of supplying the adjustment liquid needs to be changed in order to adjust the line width, the line width distribution within the surface of the workpiece W after development can be easily brought close to the target distribution.

(Variation 2)

The adjustment liquid L2 may be discharged from the adjustment nozzle 46 toward the end of the surface Wa. For example, as shown in FIG. 17(a), the adjustment liquid supply unit 40 is supplied so that the discharged adjustment liquid L2 touches the end of the bevel portion of the surface (the boundary between the surface Wa and the peripheral edge Wb). The adjustment liquid L2 may be discharged from the adjustment nozzle 46. The adjustment liquid L2 is discharged from the adjustment nozzle 46 so that the adjustment liquid L2 touches the beveled portion of the surface Wa, thereby supplying the adjustment liquid L2 to the peripheral edge area Wc. The adjustment liquid supply unit 40 discharges the adjustment liquid L2 so that a lump of mixed liquid of the developer L1 and the adjustment liquid L2 (the portion indicated by “L1+L2” in FIG. 17(a)) is transferred to the developer L1. The adjustment liquid L2 may be discharged from the developing nozzle 36 toward the peripheral edge Wb so as to form an end portion within the liquid film.

In the substrate processing method according to this modification 2, the adjustment liquid L2 is supplied by discharging the adjustment liquid L2 toward the end of the surface Wa of the work W, thereby discharging the adjustment liquid L2 with respect to the peripheral edge area Wc. ) may also include supplying. In this case, it is difficult for the adjustment liquid L2 after being supplied to the liquid film of the developer L1 to move to the central portion of the liquid film. In addition, as shown in FIG. 17(b), a lump of the adjustment liquid L2 can be held near the peripheral edge Wb (side) and the end of the back surface of the work W, so that the adjustment liquid L2 It is easy to continue the effect of suppressing the phenomenon. As a result, line width adjustment in the peripheral edge area by supplying the adjustment liquid becomes easy.

(Variation 3)

The adjustment liquid supply unit 40 may have a developing nozzle 86 instead of the developing nozzle 36. The developing nozzle 86 has one opening 86a extending in one direction, as shown in FIG. 18 . The developing nozzle 86 is arranged so that the opening 86a follows one horizontal direction (for example, the X-axis direction shown). Accordingly, the developing nozzle 86, like the developing nozzle 36, can discharge the developer L1 to the discharge area DA extending in one direction along the surface Wa. The shape of the discharge area DA by the developing nozzle 86 corresponds to (e.g., roughly matches) the shape of the opening 86a. The developing nozzle 86 may be arranged so that its longitudinal center approximately coincides with a position corresponding to the center CP. The length of the developing nozzle 86 in the longitudinal direction may be longer than the diameter of the workpiece W.

The drive unit 34 may move the developing nozzle 86 along a movement direction (for example, the Y-axis direction shown) that intersects the discharge area DA by the developing nozzle 86. The developing nozzle 86 is movable at least between both ends of the diameter along the moving direction of the work W. Similar to the series of processes illustrated in FIG. 8 , the control unit 104 rotates the workpiece W when supplying the developer L1 so that the discharge area DA moves from the peripheral edge Wb to the center CP. The developing nozzle 86 may be moved by the drive unit 34 along the moving direction so as to move up to the included central area CA. Instead of this, the control unit 104 may discharge the developer L1 from the developing nozzle 86 while moving the discharge area DA by the developing nozzle 86 from one end of the diameter of the work W to the other end. .

FIG. 19 is a flowchart showing an example of a liquid film forming process (step S01) of the developing solution L1 when using the developing nozzle 86. In this liquid film forming process, the control unit 104 performs step S71 in a state in which the developing nozzle 86 is disposed outside the work W and the work W is disposed on the holding portion 26 of the rotation holding portion 20. Run. In step S71, for example, the control unit 104 controls the rotation holding unit 20 to start rotating the workpiece W. After the workpiece W starts rotating, the control unit 104 may control the rotation holding unit 20 so that the workpiece W rotates at a predetermined rotation speed. This rotation speed is stored in advance in the storage unit 102 and is set to, for example, about 5 rpm to 20 rpm.

Next, the control unit 104 executes step S72. In step S72, for example, the control unit 104 causes the drive unit 34 of the developer supply unit 30 to start movement along the surface Wa of the developing nozzle 86. In one example, after the start of step S72, the control unit 104 causes the drive unit 34 to cause the discharge area DA by the developing nozzle 86 to move from one end of the diameter of the workpiece W along the moving direction toward the other end. Move the development nozzle (86).

Next, the control unit 104 executes steps S73 and S74. In step S73, for example, the control unit 104 waits until a predetermined ejection start timing. The discharge start timing is set in advance, for example, at the timing when the central portion of the discharge area DA reaches the peripheral edge Wb after the development nozzle 86 disposed in the standby position before movement begins to move. In step S74, for example, the control unit 104 causes the developing solution supply unit 30 to start discharging from the developing nozzle 86.

Next, the control unit 104 executes steps S75, S76, and S77. In step S75, for example, the control unit 104 waits until the discharge area DA by the development nozzle 86 reaches the target position. The target position is set in advance at a predetermined position on the moving line of the developing nozzle 86, for example, at an end position with a diameter opposite to the end at which discharge of the developing solution L1 starts. In steps S76 and S77, for example, the control unit 104 executes processing similar to steps S20 and S21 described above. By carrying out the processes of steps S71 to S77 above, a liquid film of the developer L1 is formed on the surface Wa of the work W (see FIG. 7(b)).

In the substrate processing method using the developing nozzle 86 according to this modification example 3, as in the case of using the developing nozzle 36, the line width distribution within the surface of the work W can be easily adjusted.

Figures 20(a) and 20(b) show measurement results of the line width distribution of the resist pattern when the developing nozzle 86 is used. FIG. 20(a) shows the measurement results of the line width distribution when the workpiece W is not rotated when supplying the developer L1 without supplying the adjustment solution L2. FIG. 20(b) shows the measurement results of the line width distribution when the workpiece W is rotated when the adjustment liquid L2 is supplied to the peripheral edge area Wc and the developer L1 is supplied. In each of Figures 20(a) and 20(b), the amount of deviation from the average value of the line width over the entire surface of the measurement result is displayed at each measurement site in terms of color density.

As shown in FIG. 20(a), when the adjustment liquid L2 is not supplied, the degree of development in the peripheral region Wc is greater than that in the inner region Wd due to the temperature difference. Therefore, the line width in the peripheral edge area Wc tends to be thinner than the line width in the inner area Wd. Additionally, due to the time difference in the landing of the developing solution L1 from the developing nozzle 86, there is a tendency for the line widths to be different in areas where the developing solution L1 lands quickly and slowly in one direction (horizontal direction in the drawing). In the measurement results shown in FIG. 20(a), the place where the measured value of the line width was the minimum was located in the peripheral edge area Wc, and the measured value was 51 nm smaller than the average value of the line width throughout the plane.

As shown in Fig. 20(b), when the adjustment liquid L2 is supplied to the peripheral area Wc, the progress of the phenomenon in the peripheral area Wc is suppressed by the adjustment liquid L2. Therefore, it can be seen that the acceleration of development in the peripheral area Wc due to the temperature drop is suppressed, and the difference in the degree of development between the peripheral area Wc and the inner area Wd is reduced. Compared with the measurement result shown in FIG. 20(a), the measurement result shown in FIG. 20(b) shows a tendency for the line width in the peripheral area Wc to be thinner than the line width in the inner area Wd. , In addition, the difference in line width between areas near both ends in one direction became smaller. In the measurement results shown in FIG. 20(b), the place where the measured value of the line width was the minimum was located in the peripheral edge area Wc, and the measured value was 17 nm smaller than the average value of the line width throughout the plane.

[Second Embodiment]

Next, a substrate processing system according to the second embodiment will be described with reference to FIGS. 21 and 22. In the substrate processing system according to the second embodiment, the developing unit U3 differs from the developing unit U3 according to the first embodiment in that it additionally has a gas supply portion 90. The gas supply unit 90 supplies a predetermined gas to the surface Wa (liquid film of developer L1) of the work W. The predetermined gas provided by the gas supply unit 90 may be an inert gas, and in one example, it is nitrogen gas. The gas supplied from the gas supply unit 90 is a cooling gas that locally cools the developer L1. The gas supply unit 90 is provided on the surface Wa of the work W on which the liquid film of the developer L1 has been formed (more specifically, the film existing immediately below the developer L1: the upper layer film in the above-described example). Gas is supplied to the surface (Wa) at a flow rate that is not exposed.

The gas supply unit 90 includes, for example, a gas nozzle 96. The gas supply unit 90 supplies gas from a gas source to the gas nozzle 96 through a gas flow path. The gas nozzle 96 is disposed above the work W, and sprays gas to spread (radially) in various directions with respect to the surface Wa of the work W as the distance from the gas nozzle 96 increases. You may do so. In the gas nozzle 96, for example, a plurality of jet nozzles extending in directions extending at different angles with respect to the surface Wa of the work W are formed. The gas nozzle 96 may be connected (fixed) to the adjustment nozzle 46. In this case, the drive unit 44 may move the adjustment nozzle 46 and the gas nozzle 96 together along the surface Wa.

Also in the substrate processing system according to the second embodiment, a resist pattern may be formed on the surface Wa by performing steps S01, S03, and S05 described above. FIG. 22 is a flowchart showing an example of step S03 (process for maintaining the liquid film) performed after the formation of a liquid film of the developer L1 in step S01. In the process of holding the developer L1 on the surface Wa, the control unit 104 executes step S81 immediately after the end of step S01. In step S81, for example, the control unit 104 starts causing the rotation holding unit 20 to hold the liquid film on the surface Wa of the work W. In one example, the control unit 104 causes the development unit U3 to start performing the stop phenomenon by stopping the rotation of the workpiece W by the rotation holding unit 20 .

Next, the control unit 104 executes step S82. In step S82, for example, the control unit 104 waits until the gas supply timing comes. The gas supply timing is predetermined, and is set so that gas is supplied from the gas supply unit 90 at the front end of the development period, which represents the period from the start of development to the end of development in step S03, for example.

Next, the control unit 104 executes step S83. In step S83, for example, the control unit 104 supplies gas to the surface Wa of the work W by the gas supply unit 90 while the work W is rotated by the rotation holding unit 20. The rotation speed of the work W in step S83 is set to a level where the liquid film of the developer L1 is maintained, for example, about 5 rpm to 20 rpm. When supplying gas while development is in progress by maintaining the liquid film of the developer L1, the control unit 104 controls the surface Wa by the gas supply unit 90 to an extent that the surface Wa of the work W is not exposed. ) (liquid film of developer (L1)) supplies gas. Even if the control unit 104 supplies gas to the internal area Wd inside the peripheral edge area Wc by the gas supply unit 90 without supplying gas to the peripheral edge area Wc of the surface Wa, good night.

Next, the control unit 104 executes steps S84 and S85. In step S84, for example, the control unit 104 waits until the supply timing of the adjustment liquid L2 arrives. This supply timing is set in the same way as the supply start timing in step S33 described above. In step S85, for example, in a state in which the control unit 104 rotates the workpiece W at the above-described rotational speed ω4 by the rotation holding unit 20, the circumference of the workpiece W is adjusted by the adjustment liquid supply unit 40. The adjustment liquid L2 is supplied to the edge area Wc. The rotational speed ω4 may be greater than the rotational speed of the workpiece W in step S82.

Next, the control unit 104 executes step S86 in the same manner as step S38 described above. By carrying out the series of processes of steps S81 to S86 above, development on the resist film R progresses and a resist pattern is formed on the surface Wa. In this series of processes, the control unit 104 supplies gas to the surface Wa of the work W by the gas supply unit 90, and then supplies the adjustment liquid supply unit 40 to the peripheral edge area Wc. The adjustment liquid (L2) is supplied by.

(Effect of embodiment)

In the substrate processing system according to this second embodiment, as in the first embodiment described above, the line width distribution within the work W surface can be easily adjusted.

The substrate processing method according to the second embodiment maintains the liquid film of the developer L1, and while developing, the surface Wa of the work W is maintained to such an extent that the surface Wa of the work W is not exposed. It may also include supplying gas to . In this case, since gas is supplied to the surface Wa of the work W, the temperature difference between the peripheral edge area Wc and the inner area Wd can be reduced. Therefore, it is possible to suppress the decline in line width uniformity due to the temperature difference within the surface of the work W.

In the substrate processing method according to the second embodiment, supplying the gas to the surface Wa of the work W may include supplying the gas to the internal region Wd. In this case, since the temperature of the inner region Wd to which the gas is supplied decreases, the temperature difference between the peripheral edge region Wc and the inner region Wd is reduced even when the temperature of the peripheral edge region Wc decreases. do. As a result, it is possible to further suppress the decline in line width uniformity due to the temperature difference within the surface of the work W.

In the substrate processing method according to the second embodiment, after supplying the gas to the surface Wa of the work W, the adjustment liquid L2 may be supplied to the peripheral edge area Wc. If gas with a large flow rate is supplied after supplying the adjustment liquid L2, there is a risk that the adjustment liquid L2 may spread into the liquid film of the developer L1. In contrast, in the above method, since the adjustment liquid L2 is supplied after the supply of the gas, the adjustment liquid L2 does not spread due to the supply of the gas. As a result, it is possible to achieve both efficient gas supply and line width adjustment.

Claims (20)

As a substrate processing method,
supplying the developer to the surface of the substrate to form a liquid film of the developer on the surface of the substrate;
maintaining a liquid film of the developer on the surface of the substrate to advance development on the surface of the substrate;
While the development is progressing by maintaining the liquid film of the developer, the development is progressed with respect to the peripheral edge area so as to adjust the degree of development between the peripheral edge area of the surface of the substrate and the internal area inside the peripheral edge area. Step of supplying an adjustment solution for suppression
Including, a substrate processing method. According to paragraph 1,
The step of supplying the developer includes rotating the substrate while moving a developing nozzle capable of discharging the developer into a discharge area extending in one direction along the surface of the substrate along a movement direction intersecting the discharge area. It also includes the step of discharging the developer from the developing nozzle,
Moving the developing nozzle along the moving direction includes moving the developing nozzle such that the discharge area moves from an end of the substrate surface toward a central area including the center of the substrate surface, Substrate processing method. According to claim 1 or 2,
A substrate processing method, wherein a resist film in a state exposed by i-line is formed on the surface of the substrate before development with the developer is performed. According to any one of claims 1 to 3,
The step of maintaining the liquid film of the developer on the surface of the substrate includes accelerating the rotation of the substrate to a predetermined rotation speed before supplying the adjustment liquid,
The step of supplying the adjustment liquid includes supplying the adjustment liquid to the peripheral edge area of the substrate being rotated at the predetermined rotation speed. According to any one of claims 1 to 4,
A substrate processing method, wherein after stopping the supply of the adjustment liquid, a liquid film of the developer is maintained continuously to advance development on the surface of the substrate. According to any one of claims 1 to 5,
The step of supplying the adjustment liquid to the peripheral edge region includes supplying the adjustment liquid at a later end of the period than the time of supplying the adjustment liquid at the front of the period of maintaining the liquid film of the developer on the surface of the substrate. A substrate processing method comprising supplying the adjustment liquid so that the time is prolonged. According to any one of claims 1 to 6,
A substrate processing method further comprising supplying gas to the surface of the substrate to such an extent that the surface of the substrate is not exposed while developing is progressing by maintaining a liquid film of the developer. In clause 7,
Supplying the gas to the surface of the substrate includes supplying the gas to the internal region. According to clause 7 or 8,
A substrate processing method, wherein after supplying the gas to the surface of the substrate, the adjustment liquid is supplied to the peripheral edge area. According to any one of claims 1 to 9,
The step of supplying the adjustment liquid includes supplying the adjustment liquid to the peripheral edge area by discharging the adjustment liquid toward an end of the substrate surface. According to any one of claims 1 to 10,
acquiring a line width distribution along a radial direction and a deviation amount of a target distribution on the surface of the substrate after development;
A model constructed to represent the relationship between the start timing for starting the supply of the adjustment liquid and the line width in the peripheral edge area, and based on the obtained shift amount, the start timing to reduce the shift amount for the subsequent substrate. steps to calculate
A substrate processing method further comprising: A computer-readable storage medium storing a program for causing an apparatus to execute the substrate processing method according to any one of claims 1 to 11. A substrate processing device, comprising:
a holding portion that holds a substrate with a resist film formed on its surface in a state exposed by i-line;
a developer supply unit that supplies a developer solution to the surface of the substrate held by the holding unit;
an adjustment liquid supply unit for supplying an adjustment liquid for suppressing the progress of the phenomenon to a peripheral edge area of the substrate surface held by the holding unit;
A control unit that controls the holding unit, the developer supply unit, and the adjustment solution supply unit.
Equipped with
The control unit,
supplying the developer solution to the surface of the substrate by the developer supply unit to form a liquid film of the developer solution on the surface of the substrate;
holding a liquid film of the developer on the surface of the substrate by the holding unit to advance development on the surface of the substrate;
While development is progressing by maintaining the liquid film of the developer, the adjustment solution is applied to the peripheral edge area by the adjustment solution supply unit to adjust the degree of development between the peripheral edge area and the internal area inside the peripheral edge area. to supply
A substrate processing device that executes. According to clause 13,
The holding unit can maintain the substrate while rotating it,
The developer supply unit includes a developing nozzle capable of discharging the developer into a discharge area extending in one direction along the surface of the substrate, and a developing nozzle capable of discharging the developer along the surface of the substrate and a moving direction intersecting the discharge area. It has a driving part that moves the nozzle,
The control unit,
When supplying the developer to the substrate, the developing nozzle is moved along the moving direction by the driving unit, the substrate is rotated by the holding unit, and the developer is discharged from the developing nozzle,
When moving the developing nozzle along the moving direction, the developing nozzle is moved by the driving unit so that the discharge area moves from an end of the substrate surface toward a central area including the center of the substrate surface. A substrate processing device that does this. According to claim 13 or 14,
The holding unit can maintain the substrate while rotating it,
The control unit,
When holding the liquid film of the developer on the surface of the substrate, before supplying the adjustment liquid by the developer supply section, the rotation of the substrate is accelerated to a predetermined rotation speed by the holding section,
When supplying the adjustment liquid, the adjustment liquid is supplied by the adjustment liquid supply unit to the peripheral edge area of the substrate being rotated at the predetermined rotation speed. According to any one of claims 13 to 15,
The substrate processing apparatus, wherein the control unit continues to maintain the liquid film of the developer by the holding unit to advance development on the surface of the substrate after stopping the supply of the adjustment liquid. According to any one of claims 13 to 16,
The control unit,
When supplying the adjustment liquid to the peripheral edge area, the time for supplying the adjustment liquid at the end of the period is longer than the time for supplying the adjustment liquid at the front of the period for maintaining the liquid film of the developer on the surface of the substrate. A substrate processing apparatus, wherein the adjustment solution is supplied by the developer supply unit so as to lengthen the length. According to any one of claims 13 to 17,
It further includes a gas supply unit that supplies gas to the surface of the substrate,
The control unit controls the gas supply unit to supply the gas to the surface of the substrate to an extent that the surface of the substrate is not exposed while development is progressing by maintaining the liquid film of the developer. . According to clause 18,
The substrate processing apparatus, wherein the control unit supplies the gas to the inner region by the gas supply unit when supplying the gas to the surface of the substrate. According to claim 18 or 19,
The substrate processing apparatus, wherein the control unit supplies the gas to the surface of the substrate by the gas supply unit and then supplies the adjustment liquid to the peripheral edge area by the adjustment liquid supply unit.