KR20230096216A - Metal thin film deposition method using organometallic precursor - Google Patents

Abstract

The present invention relates to a method for depositing a metal thin film using an organometallic precursor, and specifically to the method for depositing a metal thin film using an organometallic precursor by cyclic CVD, comprising: a thin film formation step using a precursor containing an organic metal; and a thin film deposition post-processing step. The method for depositing a metal thin film using an organometallic precursor by cyclic CVD can form metal thin films with excellent film quality.

Description

Metal thin film deposition method using organometallic precursor}

The present invention relates to a method for depositing a metal thin film using an organometallic precursor, and specifically, a method for forming a thin film using a precursor containing an organometallic, and a cyclic chemical vapor deposition method (cyclic CVD) comprising a thin film deposition post-treatment step. It relates to a method for depositing a metal thin film using an organometallic precursor by ).

With the high integration of semiconductor memory devices, size reduction of memory cells is progressing, and noble metals such as ruthenium, iridium, and platinum are being studied as electrode materials for memory devices.

As a method for manufacturing a metal-containing thin film having the above characteristics, a chemical vapor deposition (CVD) method or an ALD method is widely used.

In particular, in the case of ruthenium as a metal, a ruthenium thin film formed from a deposition process such as CVD and a precursor includes an adhesive layer for a copper diffusion barrier (TiN/TaN) layer, a diffusion barrier layer, and Cu electrochemical plating (ECP). It is preferred as a seed layer for

However, compared to the ALD method, the CVD method is not easy to control the thickness and quality of a metal thin film such as ruthenium. That is, metal deposition such as ruthenium by CVD may include limitations such as low deposition rate, poor step coverage, high resistivity, and poor adhesion to barrier layers.

Accordingly, in the CVD method, oxygen gas is used as a reaction gas together with a metal-containing precursor such as ruthenium to form an oxidizing compound required for successful deposition of a metal such as ruthenium on a substrate (Patent Document 1). However, these oxidizing agents are causative substances that can cause oxidative damage to the underlying nitride film.

In addition, recognizing the above problems of the oxidizing agent, Patent Document 2 forms a ruthenium thin film by a CVD method using a reducing agent such as hydrogen and ammonia together with a ruthenium precursor instead of an oxidizing agent. However, in Patent Document 2, oxygen is used after forming the ruthenium thin film to increase the deposition rate of the ruthenium thin film.

However, the use of such oxygen can increase the resistivity of the formed ruthenium thin film because the incorporation of ruthenium oxide, which has a higher resistivity than that of metallic ruthenium, is inevitable. In addition, generation of oxygen atoms due to the use of oxygen may cause oxidative damage to the underlying nitride film, which is a disadvantage due to the use of the oxidizing agent of Patent Document 1.

Therefore, in the manufacture of a metal-containing thin film, such as ruthenium, which exhibits various advantages in the manufacture of a semiconductor memory device, it is further required to develop a new technology for manufacturing a metal thin film such as ruthenium that can solve the above problems.

KR10-0982109 (2010.09.14. Notice) KR10-2021-0058986 (2021.05.24. Public)

Therefore, an object of the present invention is to solve such conventional problems, and in a CVD deposition process using an organometallic precursor having many variables in the deposition process, the thickness and resistivity of the film can be improved by controlling impurities such as carbon, oxygen, and nitrogen. It is an object of the present invention to provide a method for depositing a metal thin film capable of forming a metal thin film having a significant reduction in film quality and excellent film quality.

The problem to be solved by the present invention is not limited to the above-mentioned problem, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

For the above purpose, the metal thin film deposition method using the organometallic compound precursor of the present invention includes a substrate preparation step; Substrate input step; substrate stabilization step; Depositing a thin film using an organometallic compound precursor; and a post-processing step of thin film deposition.

The substrate preparation step is a step in which a necessary preparation process is performed before the substrate is put into the reaction vessel, and may be a process of cleaning the substrate or preparing the surface of the substrate in a desired state, and this process removes organic matter on the substrate. It may include wet or dry cleaning processes and wet and dry etching processes to remove oxides on the surface of the substrate.

The substrate in the substrate preparation step may be a substrate commonly used in the art, such as a sapphire substrate, a silicon substrate, a gallium arsenide substrate, a quartz substrate, or a glass substrate.

In the step of inputting the substrate, when the substrate is introduced into the reaction vessel, the substrate is loaded into the loading vessel in order to minimize the change in the pressure environment of the reaction vessel, and after creating a pressure environment similar to that of the reaction vessel in the loading vessel, the substrate is transferred from the loading vessel to the reaction vessel. It is an input step.

The substrate stabilization step is a step for raising the substrate temperature to a process temperature by thermal diffusion after the substrate is introduced from the loading container to the reaction container.

The thin film deposition step is a step in which a metal thin film using an organometallic compound precursor is formed on the substrate on which the substrate stabilization step is performed.

The thin film deposition step includes a precursor compound injection step and a reaction gas injection step, and the injection of the precursor compound and the reaction gas may be performed simultaneously or in the above order.

The precursor compound may be a cyclopentadienyl (Cp, Cyclopentadienyl) ligand-based compound as an organometallic compound precursor.

In the precursor injection step, a carrier gas may also be used along with the precursor injection, if necessary. The carrier gas may be an inert gas such as argon, helium, or a mixture thereof.

A material containing a nitrogen atom may be used as the reaction gas, N2; NH3; alkyl or amino compounds; alkyl or aryl imino compounds; hydrazine; cyclic alkyl; aryl amino compounds; or a mixture thereof.

The thin film deposition post-treatment step is a step for removing impurities such as carbon, oxygen, and nitrogen from the thin film formed in the thin film deposition step, and is a step of exposing the thin film to a material containing nitrogen atoms. The material containing the nitrogen atom is N2; NH3; alkyl or amino compounds; alkyl or aryl imino compounds; hydrazine; cyclic alkyl; aryl amino compounds; or a mixture thereof.

The thickness and specific resistance of the thin film may be adjusted by the thin film deposition post-processing step.

the thin film deposition step; and the thin film post-deposition treatment step; the processing time ratio may be greater than 1:1 and 1:20.

the thin film deposition step; and the thin film deposition post-processing step; is referred to as a one-time thin film deposition unit, and the thin film deposition unit may be performed one or more times.

As described above, the thickness of the metal thin film formed by the metal thin film deposition method of the present invention is 100 Å or less, and in this case, the resistivity of the thin film may be 25 μΩ*cm or less.

The present invention further includes a thin film deposition post-processing step after the formation of the thin film deposition in the thin film formation process using the organometallic compound precursor, thereby controlling the thickness of the thin film in the deposition process while using the organometallic compound precursor having many variables in deposition, , there is an advantage in that the specific resistance of the thin film can be lowered through this.

1 is a process flow diagram of a thin film deposition method using an organometallic compound precursor according to the present invention.
FIG. 2 is a TEM photograph of a thin film formed in Example 1 of the present invention (thin film deposition step: processing time ratio of the thin film deposition post-processing step is 1:4).
3 is a TEM image of a thin film formed in Example 2 of the present invention (thin film deposition step: processing time ratio of the thin film deposition post-processing step is 1:8).
4 is a TEM photograph of a thin film formed by Comparative Example 1.
5 is a TEM photograph of a thin film formed by Comparative Example 2.
6 is a schematic diagram showing a process sequence of cyclic CVD of the present invention and thermal CVD of Comparative Example 1.
7 is a graph showing the contents of ruthenium, carbon, oxygen, and nitrogen components included in thin films according to Comparative Examples 1 and 2 and Example 2 of the present invention.
8 is a graph showing the crystallinity of thin films formed by Comparative Examples 1 and 2 and Example 2 of the present invention.
9 is a TEM showing a thin film formed in an opening pattern in a substrate formed by Comparative Examples 1 and 2 and Example 2 of the present invention.

Hereinafter, with reference to preferred embodiments and drawings of the present invention, it will be described so that those skilled in the art can easily implement it. In addition, in the description of the present invention, if it is determined that a detailed description of a related known function or known configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

Since the present invention can apply various transformations and have various embodiments, specific embodiments will be exemplified and described in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, and should be understood to include all conversions, equivalents, or substitutes included in the spirit and scope of the present invention. Also, throughout the specification, when a part "includes" a certain component, it means that it may further include other components, not excluding other components, unless otherwise stated.

Terms used in the present invention are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In the present invention, terms such as include or have are intended to designate that a feature, number, step, operation, component, part, or combination thereof described in the specification exists, but one or more other features, numbers, or steps However, it should be understood that it does not preclude the possibility of existence or addition of operations, components, parts, or combinations thereof.

In the following, the present invention will be described in detail with reference to the drawings.

1 is a process flow chart of a thin film deposition method using an organometallic compound precursor according to the present invention.

As shown in the process flow chart of FIG. 1, the thin film deposition method using the organometallic compound precursor of the present invention includes a substrate preparation step; Substrate input step; substrate stabilization step; It includes a thin film deposition step using an organometallic compound precursor: and a thin film deposition post-processing step, and each of the above steps is sequentially performed as follows.

Looking at each step in detail,

The substrate preparation step is a step in which a necessary preparation process is performed before the substrate is put into the reaction vessel, and may include a process of cleaning the substrate or preparing the surface of the substrate to a desired state. In particular, this process may include a wet or dry organic material cleaning process for removing organic material on the substrate, and a wet and dry etching process for removing oxide on the surface of the substrate. The wet and dry cleaning for removing the organic material and the wet and dry etching for removing the oxide may be methods known in the art.

The substrate in the substrate preparation step may be a substrate commonly used in the art, such as a sapphire substrate, a silicon substrate, a gallium arsenide substrate, a quartz substrate, or a glass substrate.

The substrate inputting step is a step in which a substrate is loaded into a loading container in order to minimize a change in the pressure environment of the reaction container, a pressure environment similar to that of the reaction container is created in the loading container, and then the substrate is introduced.

The pressure of the reaction vessel may be 10 Torr or less, preferably 8 Torr or less.

The substrate stabilization step is a step for raising the substrate temperature to a process temperature through thermal diffusion after the substrate is introduced from the loading container to the reaction container.

The process temperature is 350 °C to 500 °C, preferably 400 °C to 450 °C. Outside the above temperature range, the reaction between the precursor compound and the substrate may be insufficient, or the precursor compound itself may be deformed due to the high temperature in the high-pressure reaction vessel, making it difficult to form a thin film.

In the substrate stabilization step, an inert gas may be used, and the inert gas may be provided in an amount of about 100 sccm to about 1000 sccm, preferably about 300 sccm to about 700 sccm.

The thin film deposition step is a step in which a metal thin film using an organometallic compound precursor is formed on the substrate on which the substrate stabilization step is performed.

Specifically, the thin film deposition step may include an organometallic compound precursor on the pre-treated substrate; And a reaction gas; a step of forming a metal thin film by injecting.

The organometallic compound precursor is a cyclopentadienyl (Cp, Cyclopentadienyl) ligand-based compound, and the metal in the compounds is Ru, Ti, Zr, Hf, Nb, Ta, Mo, W, Cr, Co, Ni, Pd , Pt, Cu, Al, Ga, In, Si, Ge, Sn, P, As, or Sb. Preferably it may be Ru.

Specifically, the organometallic compound precursor may be a compound represented by Formula 1 below. In Formula 1, R1 to R5 are each a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms or hydrogen, and R6 and R7 are each a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms.

Preferably, in Formula 1 below, R1 and R3 among R1 to R5 are straight-chain or branched-chain alkyl groups having 1 to 4 carbon atoms, the remaining R2, R4, and R5 are hydrogen, and R6 and R7 are each a straight-chain chain having 1 to 4 carbon atoms. or a branched chain alkyl group.

A more preferred compound of Formula 1 is a compound in which R1 and R3 are ethyl groups, R2, R4 and R5 are hydrogen, and R6 and R7 are methyl groups, as shown in Formula 2 below.

Formula 1 Formula 2

In Chemical Formulas 1 and 2, the metal (M) is Ru, Ti, Zr, Hf, Nb, Ta, Mo, W, Cr, Co, Ni, Pd, Pt, Cu, Al, Ga, In, Si, Ge, Sn , P, As, or Sb. Preferably it may be Ru.

Each of the above precursors may have a liquid form or may be used in a gaseous form.

The precursor is injected in the form of vapor upon heating of the precursor vessel.

An injection amount of the precursor injected from the precursor container may be determined according to a required thickness of the thin film and a thin film deposition unit.

Injecting the precursor compound may use a carrier gas if necessary. The carrier gas may be an inert gas such as argon, helium, or a mixture thereof.

The amount of the carrier gas is 100 to 50,000 times (by volume) the amount of the precursor.

The carrier gas may be provided in an amount of about 10 to about 1000 sccm, preferably 10 to 500 sccm.

The precursor may be delivered to the chamber at about 0.0001 to about 50 sccm.

The reaction gas is a compound containing a nitrogen functional group.

The compound containing the nitrogen functional group is N ₂ ; NH ₃ ; hydrazine; alkylamino compounds; alkylimino compounds; cyclic alkylamino compounds; aryl amino compounds; aryl imino compounds; or a mixture thereof.

For example, the alkyl or aryl amino compounds include N(CH ₃ ) ₂ , N(C ₂ H ₅ ) ₂ , N(C ₃ H ₇ ) ₂ , N(C4H9) ₂ , N(CH ₃ )(C ₂ H ₅ ), isomers thereof, derivatives thereof, or combinations thereof. the alkylimino compound; cyclic alkylamino compounds; aryl amino compounds; And the aryl imino compound may be a known compound known in the art.

The reactive gas may be delivered to the chamber at 100 to 10,000 sccm.

The substrate temperature in the thin film deposition step is about 300 to about 500 °C, preferably about 400 °C to 450 °C. The pressure within the chamber may range from about 1 to about 10 Torr, preferably from about 1 to about 8 Torr.

The thin film deposition post-treatment step is a step for removing impurities such as carbon, oxygen, and nitrogen from the thin film formed in the thin film deposition step, and is a step of exposing the thin film to a material containing nitrogen atoms.

The material containing the nitrogen atom is N2; NH3; alkyl or amino compounds; alkyl or aryl imino compounds; hydrazine; cyclic alkyl; aryl amino compounds; or a mixture thereof.

In the thin film deposition post-processing step, an amount of the nitrogen atom-containing material may be delivered to the chamber in an amount of 100 sccm to 10,000 sccm. Preferably, in the thin film deposition post-processing step, the amount of the nitrogen atom-containing material may be used in the same amount as the reaction gas used in the thin film deposition step.

the thin film deposition step; and the thin film post-deposition treatment step; the processing time ratio may be greater than 1:1 and 1:20.

The thickness, resistivity, and crystallinity of the thin film formed in the thin film deposition step can be adjusted by the thin film deposition post-processing step.

the thin film deposition step; and the thin film deposition post-processing step; is referred to as a one-time thin film deposition unit, and the thin film deposition unit may be performed one or more times.

As described above, the thickness of the metal thin film formed by the metal thin film deposition method of the present invention is 100 Å or less, and in this case, the resistivity of the thin film may be 25 μΩ*cm or less.

The thin film deposition method using the organometallic compound precursor of the present invention as described above includes a thin film forming step; And a post-processing step of forming a thin film; by including, the thickness, resistivity, and crystallinity of the thin film formed can be adjusted.

6 schematically shows a sequence (deposition process) of cyclic CVD, which is a thin film deposition method using the organometallic compound precursor of the present invention, and a sequence (deposition process) of thermal CVD, which is a prior art.

Compared to the thin film formed by the conventional thermal CVD method, the metal thin film formed by the thin film deposition method of the present invention can be deposited with excellent advantages in resistivity, adhesion, deposition rate, or step coverage. There will be.

The metal thin film formed according to the present invention may be formed in interconnect structures such as vias or trenches, and also, the metal thin film may be formed in dynamic random access memory (DRAM), or capacitor electrodes, etc. ( However, it may be part of a larger element (but not limited thereto).

Specifically, the thin film deposition method of the present invention may be applied to a substrate having an opening as shown in FIG. 9 . The opening may be any opening such as a via, trench, or dual damascene structure, or the like. A filling material of the opening may be a conductive material, and deposition may be performed by a conventional method.

Before forming the metal thin film in the opening, sidewalls and bottom surfaces on which the metal thin film is formed may be covered with one or more layers. The layers may be conventional material layers in the art, and the thickness of the layers may also have a thickness according to the needs of the art.

In the following, the present invention will be described using specific examples.

Example 1

The organometallic precursor used for thin film deposition was (2,4-dimethyloxopentadienyl) (diethylcyclopentadienyl) Ru precursor, and ammonia was used as a reaction gas. In the case of the canister temperature of the precursor, it was maintained at 74 degrees, and the deposition of the Ru thin film was carried out at a process pressure of 5 Torr.

For depositing a Ru thin film, a piece of Si wafer containing 1000Å SiO ₂ was put into the equipment and chemical vapor deposition (CVD) was performed.

The wafer is stabilized while supplying 500 sccm of Ar for 1 minute so that the substrate temperature can be sufficiently reached (substrate stabilization step).

Deposition of a Ru thin film was performed by simultaneously injecting a Ru precursor and ammonia as a reaction gas. In the case of the Ru precursor, Ar is used as a carrier gas and 60 sccm is injected.

At this time, the amount of Ru precursor injected is 0.048 sccm, and the amount of ammonia as a reaction gas is injected at 500 sccm. The deposition temperature of the substrate was 450° C. (thin film deposition step).

After depositing the Ru thin film, ammonia gas was injected to remove impurities in the deposited Ru thin film. 500 sccm of the ammonia gas was used, and the process pressure was 5 Torr.

The thin film deposition step and the thin film post-deposition treatment step were repeatedly performed, and the ratio of the time of the thin-film deposition step and the time of the thin-film post-deposition treatment step was 1:4. The execution time of the thin film deposition post-processing step was 2.25 minutes (based on 1 cycle).

The thickness of the Ru thin film deposited according to Example 1 was 86 Å, the resistivity was 22 μΩ*cm, and the TEM of the thin film is shown in FIG. 2 . The thin film thickness of Example 1 is the result of 210 cycles (see FIG. 2).

Example 2

Example 2 was performed in the same manner as Example 1, except that the ratio of the time of the thin film deposition step and the time of the thin film post-deposition treatment step in Example 1 was 1:8. The execution time of the thin film deposition post-processing step was 1.25 minutes (based on 1 cycle).

The thickness of the Ru thin film deposited according to Example 2 was 82 Å, the resistivity was 23 μΩ*cm, and the TEM of the thin film is shown in FIG. 3 . The thin film thickness of Example 2 is the result of 210 cycles (see FIG. 3).

Comparative Example 1

Comparative Example 1 was performed in the same manner as Example 1, except that the 'thin film post-deposition treatment step' was not performed in Example 1.

The thickness of the Ru thin film deposited according to Comparative Example 1 was 552 Å, the resistivity was 30,000 μΩ*cm, and the TEM of the thin film is shown in FIG. 4 (see FIG. 4).

Comparative Example 2

Comparative Example 2 was carried out in the same manner as Example 1, except that the ratio of the time of the thin film deposition step and the time of the thin film deposition post-treatment step in Example 1 was 1:1.

The thickness of the Ru thin film deposited according to Comparative Example 2 was 128 Å, the resistivity was 78 μΩ*cm, and the TEM of the thin film is shown in FIG. 5 (see FIG. 5).

Figure 1 below shows the TEM of the deposited thin films of Comparative Examples 1 and 2 and Examples 1 and 2.

Comparative Example 1 Comparative Example 2 Example 1 Example 2

<Figure 1>

As shown in Figure 1, Examples 1 and 2 of the thin film deposition method of the present invention have thin film thicknesses of 86 Å and 82 Å, which are 100 Å or less, whereas Comparative Examples 1 and 2 have thin film thicknesses of 552 Å and 128 Å, which exceed 100 Å. are doing In addition, in the resistivity of the thin film, Examples 1 and 2 are 22 μΩ * cm and 23 μΩ * cm, which are 25 μΩ * cm or less, whereas Comparative Examples 1 and 2 are 30,000 μΩ * cm and 78 μΩ * cm, which exceed 25 μΩ * cm.

Figure 2 below is a graph showing the amount of carbon, oxygen, and nitrogen contained in the Ru thin film formed by Example 2, which is the metal thin film deposition method of the present invention, and Comparative Examples 1 and 2, which are prior art.

<Figure 2>

As shown in Figure 2, in the case of the Ru thin film according to Example 2 of the present invention, nitrogen is less than 5%, whereas in the case of Comparative Examples 1 and 2, which are prior art, nitrogen is about 8 to 9.5, which is twice that of Example 2. It has more impurities than above.

Accordingly, due to the decrease in impurities in the thin film, the grain size of the Ru thin film increases and the crystallinity of the thin film increases, and the resistivity of the thin film is lowered as shown in Figure 1 above (Figure 3).

Comparative Example 1 Comparative Example 2 Example 2

<Figure 3>

In addition, the case where the Ru thin film according to Example 2 and Comparative Examples 1 and 2 of the present invention is applied to the opening pattern of the substrate is shown in Figure 4 below.

Comparative Example 1 Comparative Example 2 Example 2

<Figure 4>

As shown in Figure 4, the step coverage (step coverage) of the Top/Middle part of the pattern is 48% in Comparative Example 1 and 99% in Example 2, so the thin film formation method of the present invention is It is shown that the thin film is formed uniformly in thickness throughout. The aspect ratio of the openings in the above Examples and Comparative Examples was 17:1

From the results of these Examples and Comparative Examples, the thickness, resistivity, and And it can be seen that control of crystallinity is possible.

The metal thin film manufactured as described above may be used for manufacturing a semiconductor device.

The scope of the present invention is not limited to the above-described embodiments, but may be implemented in various forms of embodiments within the scope of the appended claims. Anyone skilled in the art without departing from the subject matter of the present invention claimed in the claims is considered to be within the scope of the claims of the present invention to various extents that can be modified.

Claims (15)

A method for depositing a metal thin film using an organometallic compound precursor, the method comprising:
substrate preparation step; Substrate input step; substrate stabilization step; Depositing a thin film using an organometallic compound precursor; And a thin film deposition post-treatment step; including,
The thin film deposition post-processing step is a step for removing impurities such as carbon, oxygen, and nitrogen in the thin film formed in the thin film deposition step, and is a step of exposing to a material containing nitrogen atoms, characterized in that, the organometallic compound precursor Metal thin film deposition method using According to claim 1,
The material containing the nitrogen atom is N2; NH3; alkyl or amino compounds; alkyl or aryl imino compounds; hydrazine; cyclic alkyl; aryl amino compounds; Or a method of depositing a metal thin film using an organometallic compound precursor, characterized in that it is a mixture thereof According to claim 1,
In the thin film deposition post-treatment step, the amount of the nitrogen atom-containing material is 100 to 10,000 sccm, characterized in that, metal thin film deposition method using an organometallic compound precursor According to claim 1,
the thin film deposition step; and the processing time ratio of the thin film deposition post-processing step is greater than 1:1 and 1:20, characterized in that, a metal thin film deposition method using an organometallic compound precursor. According to claim 1,
The substrate in the substrate preparation step is a sapphire substrate, a silicon substrate, a gallium arsenide substrate, a quartz substrate, or a glass substrate,
The substrate stabilization step is a step for raising the substrate temperature to the process temperature through thermal diffusion using an inert gas after the substrate is introduced into the reaction vessel from the loading vessel, the pressure of the reaction vessel is 10 Torr or less, and the process temperature is 350 ° C to 500 ° C, the inert gas is about 100 to about 1000 sccm,
The thin film deposition step may include an organometallic compound precursor on the pre-treated substrate; And a reaction gas; characterized in that the step of forming a metal thin film by introducing a metal thin film deposition method using an organometallic compound precursor According to claim 1,
The organometallic compound precursor is a cyclopentadienyl (Cp, Cyclopentadienyl) ligand-based compound, and the metal of the organometallic compound precursor is Ru, Ti, Zr, Hf, Nb, Ta, Mo, W, Cr, Co, Ni , Pd, Pt, Cu, Al, Ga, In, Si, Ge, Sn, P, As, or Sb, characterized in that, metal thin film deposition method using an organometallic compound precursor According to claim 6,
Characterized in that the metal is Ru, metal thin film deposition method using an organometallic compound precursor According to claim 1,
The metal thin film deposition method using an organometallic compound precursor, characterized in that the organometallic compound precursor is a compound represented by the following formula (1)

Formula 1
(In Formula 1, R1 to R5 are each a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms or hydrogen, R6 and R7 are each a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms, and the metal (M) is Ru, Ti, Zr, Hf, Nb, Ta, Mo, W, Cr, Co, Ni, Pd, Pt, Cu, Al, Ga, In, Si, Ge, Sn, P, As, or Sb) According to claim 8,
Metal thin film deposition method using an organometallic compound precursor, characterized in that M in Formula 1 of the organometallic compound precursor is Ru According to claim 8,
The metal thin film deposition method using an organometallic compound precursor, characterized in that the organometallic compound precursor is a compound represented by the following formula (2)

Formula 2 According to claim 10,
Metal thin film deposition method using an organometallic compound precursor, characterized in that M in Formula 2 of the organometallic compound precursor is Ru According to claim 1,
Metal thin film deposition method using an organometallic compound precursor, characterized in that the organometallic compound precursor is in liquid form or gaseous form According to claim 5,
The reaction gas is a compound containing a nitrogen functional group,
The compound containing the nitrogen functional group is N ₂ ; NH ₃ ; hydrazine; alkylamino compounds; alkylimino compounds; cyclic alkylamino compounds; aryl amino compounds; aryl imino compounds; Or a method of depositing a metal thin film using an organometallic compound precursor, characterized in that it is a mixture thereof According to claim 1,
The thickness of the metal thin film formed by the metal thin film deposition method is 100 Å or less, and in this case, the resistivity of the thin film is 25 μΩ * cm or less, characterized in that, a metal thin film deposition method using an organometallic compound precursor The metal thin film produced by deposition according to any one of claims 1 to 14 is used for manufacturing a semiconductor device.

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