KR20230091668A - VCSEL Package with Gallium Nitride FET Driver - Google Patents

Abstract

Disclosed is a VCSEL package including a GaN FET driving driver. According to one aspect of the present embodiment, a VCSEL package has improved output light characteristics by minimizing the effects of resistance, inductance, and capacitance inevitably caused in the package. The VCSEL package includes: a substrate; a VCSEL array disposed on the substrate; a switch disposed within a preset radius from the VCSEL array to control an operation of the VCSEL array; and a housing.

Description

VCSEL Package with GaN FET Driving Driver {VCSEL Package with Gallium Nitride FET Driver}

An embodiment of the invention relates to a VCSEL package containing a GaN FET driving driver.

The contents described in this part merely provide background information on the present embodiment and do not constitute prior art.

In general, semiconductor laser diodes include Edge Emitting Laser Diodes (EELs, hereinafter abbreviated as 'EELs') and Vertical Cavity Surface Emitting Lasers (VCSELs, hereinafter abbreviated as 'VCSELs'). including) Since the EEL has a resonance structure parallel to the stacking surface of the device, a laser beam is oscillated in a direction parallel to the stacking surface. The VCSEL has a resonance structure perpendicular to the stacking surfaces of the elements, so that a laser beam is oscillated in a direction perpendicular to the stacking surfaces of the elements.

Compared to EEL, VCSEL has a shorter optical gain length, enabling low-power implementation and high-density integration, which is advantageous for mass production. In addition, the VCSEL can oscillate a laser beam in a single longitudinal mode, and a test on a wafer is possible. Moreover, since the VCSEL is capable of high-speed modulation and can oscillate a circular beam, it is easy to couple with an optical fiber and implement a two-dimensional plane array.

VCSELs have been mainly used as light sources in optical devices in optical communication, optical interconnection, and optical pickups. Recently, however, the range of use of the VCSEL is expanding to the area of light sources or sensors in image forming devices such as LiDAR, face recognition, motion recognition, AR (Augmented Reality) or VR (Virtual Reality) devices.

In order for the VCSEL to operate in the area of a light source or sensor in an image forming device, it must be able to output light with precise optical characteristics. VCSEL ideally performs pulse driving, but in reality, ideal pulse driving is impossible due to the connection between each element or the resistance (R), inductance (L), and capacitance (C) inevitably occurring within each element. do. Accordingly, there is a demand for minimizing adverse effects caused by the RLC so that the VCSEL can perform pulse driving as much as possible.

An object of one embodiment of the present invention is to provide a VCSEL package that includes a GaN FET driving driver and has improved characteristics of output light by minimizing the effects of resistance, inductance, and capacitance that inevitably occur in the package.

According to one aspect of this embodiment, a substrate, a VCSEL array disposed on the substrate, and a switch and a housing disposed within a predetermined radius from the VCSEL array to control the operation of the VCSEL array, wherein the VCSEL array includes m It has rows and n columns, and includes VCSELs connected in parallel for each column, wherein the VCSELs are positioned on a first substrate doped with a first polar dopant and on the first substrate, and a plurality of DBRs (Distributed Bragg Reflectors) It is located between a first reflector including a pair and an upper portion of the first reflector, and is positioned between a second reflector including a plurality of DBR pairs and the first reflector and the second reflector, Positioned between the cavity layer and the cavity layer and the first reflector or the second reflector, in which holes generated from one of the reflector and the second reflector and electrons generated from the other recombine, the laser to be output An oxide film layer that determines the characteristics and diameter of the opening and an insulating film coated on the second reflector to protect the first reflector, the second reflector, the cavity layer, and the oxide film layer from the outside, and the second reflector. 2 A first electrode electrically connected to the reflector so that power can be supplied to the second reflector and a second electrode positioned at the lower end of the first substrate to allow power to be supplied to the first reflector Provides a VCSEL package characterized in that it includes.

According to one aspect of this embodiment, the switch is characterized in that it is included as many as n.

According to one aspect of this embodiment, the first electrode is characterized in that it is implemented as a common electrode of VCSELs disposed in each column.

According to one aspect of this embodiment, each switch is characterized in that connected to the first electrode.

According to one aspect of this embodiment, a substrate, a VCSEL array disposed on the substrate, and a switch and a housing disposed within a predetermined radius from the VCSEL array to control the operation of the VCSEL array, wherein the VCSEL array includes m It has rows and n columns, and each column includes VCSELs connected in series. It is located between a first reflector including a pair and an upper portion of the first reflector, and is positioned between a second reflector including a plurality of DBR pairs and the first reflector and the second reflector, Positioned between the cavity layer and the cavity layer and the first reflector or the second reflector, in which holes generated from one of the reflector and the second reflector and electrons generated from the other recombine, the laser to be output An oxide film layer that determines the characteristics and diameter of the opening and an insulating film coated on the second reflector to protect the first reflector, the second reflector, the cavity layer, and the oxide film layer from the outside, and the second reflector. 2 A first electrode electrically connected to the reflector so that power can be supplied to the second reflector and a second electrode positioned at the lower end of the first substrate to allow power to be supplied to the first reflector Provides a VCSEL package characterized in that it includes.

According to one aspect of this embodiment, the switch is characterized in that it is included as many as n.

According to one aspect of this embodiment, the first electrode is characterized in that it is implemented as a common electrode of VCSELs disposed in each column.

According to one aspect of this embodiment, the switch is characterized in that wire bonding to the first electrode.

According to one aspect of this embodiment, a substrate, a VCSEL array disposed on the substrate, and a switch and a housing disposed within a predetermined radius from the VCSEL array to control the operation of the VCSEL array, wherein the VCSEL array includes m It has rows and n columns and includes VCSELs connected in parallel for each column, the VCSELs being positioned on an undoped substrate and the undoped substrate, a first substrate doped with a first polar dopant and the first substrate A first reflector positioned on the top and including a plurality of Distributed Bragg Reflector (DBR) pairs and a second reflector positioned on top of the first reflector and including a plurality of DBR pairs and the first reflector, A cavity layer positioned between the second reflectors and in which holes generated from one of the first reflector and the second reflector and electrons generated from the other recombine; and the cavity layer and the first reflector; An oxide film layer positioned between the second reflectors and electrically connected to the second reflectors to determine the characteristics of the laser to be output and the diameter of the opening, so that power can be supplied to the second reflectors. A second electrode positioned on the electrode and the remaining area on the first substrate where the first reflector is not located, and allowing power to be supplied to the first reflector, and a coating on the second reflector and the second electrode. and an insulating film for protecting the first reflector, the second reflector, the cavity layer, the oxide film layer, and the second electrode from the outside.

According to one aspect of this embodiment, the housing is characterized in that it comprises a step difference.

According to one aspect of the present embodiment, the VCSEL package may further include a lens that converts a path of light output from the VCSEL array and is supported by being seated on the step.

According to one aspect of this embodiment, a substrate, a VCSEL array disposed on the substrate, and a switch and a housing disposed within a predetermined radius from the VCSEL array to control the operation of the VCSEL array, wherein the VCSEL array includes m It has rows and n columns, and each column includes VCSELs connected in series, wherein the VCSELs are positioned on an undoped substrate and the undoped substrate, and a first substrate doped with a first polar dopant and the first substrate A first reflector positioned on the top and including a plurality of Distributed Bragg Reflector (DBR) pairs and a second reflector positioned on top of the first reflector and including a plurality of DBR pairs and the first reflector, A cavity layer positioned between the second reflectors and in which holes generated from one of the first reflector and the second reflector and electrons generated from the other recombine; and the cavity layer and the first reflector; An oxide film layer positioned between the second reflectors and electrically connected to the second reflectors to determine the characteristics of the laser to be output and the diameter of the opening, so that power can be supplied to the second reflectors. A second electrode positioned on the electrode and the remaining area on the first substrate where the first reflector is not located, and allowing power to be supplied to the first reflector, and a coating on the second reflector and the second electrode. and an insulating film for protecting the first reflector, the second reflector, the cavity layer, the oxide film layer, and the second electrode from the outside.

According to one aspect of this embodiment, the second reflector is characterized in that implemented as a semiconductor layer doped with a dopant of a different polarity than the first reflector.

According to one aspect of the present embodiment, the insulating film may include a first hole to electrically connect the second reflector and the first electrode.

As described above, according to one aspect of the present embodiment, there is an advantage in that characteristics of output light can be improved by minimizing the effects of resistance, inductance, and capacitance that inevitably occur in the package.

1 is a cross-sectional view of a VCSEL package according to an embodiment of the present invention.
2 is a diagram showing the structure of a VCSEL array and a switch according to the first embodiment of the present invention.
3 is a circuit diagram between a switch and a plurality of VCSELs according to the first embodiment of the present invention.
4 is a diagram showing the structure of a VCSEL according to the first embodiment of the present invention.
5 is a diagram showing the structure of a VCSEL array and a switch according to a second embodiment of the present invention.
6 is a diagram showing the structure of a VCSEL according to a second embodiment of the present invention.
7 is a circuit diagram between a switch and a plurality of VCSELs according to a second embodiment of the present invention.
8 is a diagram showing the structure of a VCSEL according to a third embodiment of the present invention.

Since the present invention can make various changes and have various embodiments, specific embodiments will be illustrated in the drawings and described in detail. However, this is not intended to limit the present invention to specific embodiments, and should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. Like reference numerals have been used for like elements throughout the description of each figure.

Terms such as first, second, A, and B may be used to describe various components, but the components should not be limited by the terms. These terms are only used for the purpose of distinguishing one component from another. For example, a first element may be termed a second element, and similarly, a second element may be termed a first element, without departing from the scope of the present invention. The terms and/or include any combination of a plurality of related recited items or any of a plurality of related recited items.

It is understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, but other elements may exist in the middle. It should be. On the other hand, when an element is referred to as “directly connected” or “directly connected” to another element, it should be understood that no intervening element exists.

Terms used in this application are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. It should be understood that terms such as "include" or "having" in this application do not exclude in advance the possibility of existence or addition of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification. .

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs.

Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and unless explicitly defined in the present application, they should not be interpreted in an ideal or excessively formal meaning. don't

In addition, each configuration, process, process or method included in each embodiment of the present invention may be shared within a range that does not contradict each other technically.

1 is a cross-sectional view of a VCSEL package according to an embodiment of the present invention.

Referring to FIG. 1 , a VCSEL package 100 according to an embodiment of the present invention includes a support substrate 110, a VCSEL array 120, a switch 130, a housing 140 and a lens 150.

The support substrate 110 supports each component in the VCSEL package 100.

The VCSEL array 120 is an optical device in which a plurality of VCSELs are arranged in an array form to vertically output light (or laser) of a certain intensity or higher. The VCSEL array 120 includes a plurality of VCSELs, typically tens to hundreds of VCSELs, in order to output light having a certain intensity or higher.

The switch 130 controls whether a certain number of VCSELs in the VCSEL array 120 operate. A plurality of switches 130 are included in the VCSEL package 100 to control the operation of the plurality of VCSELs. For example, when the VCSEL array 120 is implemented with m*n VCSELs, n switches 130 may be included to control the operation of the VCSELs in each column.

The switch 130 controls the operation of the VCSEL by determining whether to supply power to the VCSEL controlled by the switch 130 according to whether a power signal is applied from the outside. However, as described above, since the switch 130 controls operation by controlling whether power signals are applied to n VCSELs, power must be supplied to all n VCSELs. Accordingly, the switch 130 may be implemented as a gallium nitride (GaN) field effect transistor (FET, hereinafter abbreviated as “GaN FET”). A GaN FET has a higher current transfer capacity than a conventional general FET, can support a relatively higher voltage, and can provide a faster switching speed. Accordingly, the switch 130 may be implemented as a GaN FET to control the operation of a plurality of VCSELs.

The switch 130 is each wire-bonded with the VCSEL array for control of each VCSEL in the VCSEL array 120. However, as the separation distance between the two 120 and 130 increases, resistance, inductance, or capacitance increases, and thus operating characteristics of the VCSEL may deteriorate. Accordingly, the switch 130 is disposed adjacent to the VCSEL array 120 (within a predetermined radius) within the package 100, thereby preventing an increase in resistance, inductance or capacitance due to the separation distance.

The housing 140 protects the VCSEL array 120 and the switch 130 from an external force and places the lens 150 therein. The housing 140 is disposed on the outermost side of the support substrate 110 so that the VCSEL array 120 and the switch 130 can be disposed inside the package 100 .

The housing 140 has a step 145 so that the lens 150 can be disposed and fixed on the step 145 .

The lens 150 is disposed in front (upper part) of the direction in which the VCSEL array 120 outputs light, and converts a path of light output from the VCSEL array 120 .

As the VCSEL array 120 and the switch 130 have structures to be described later with reference to FIGS. 2 to 8 , the VCSEL package 100 can output light of excellent quality.

2 is a diagram showing the structure of a VCSEL array and a switch according to the first embodiment of the present invention, and FIG. 3 is a circuit diagram between a switch and a plurality of VCSELs according to the first embodiment of the present invention.

Referring to FIG. 2, as described above, the VCSEL array 120 is implemented with m*n VCSELs 120aa to 120mn. VCSELs (120aa to 120ma, ... 120an to 120mn) in each row are connected to common electrodes 210a to 210n, and switches 130a to 130n are connected (wire bonding) to each common electrode to control the operation of the VCSELs in each row. Control. Since the VCSELs in each column are isolated from each other and do not affect each other, the switches 130a to 130n are included as many as the number of columns in the VCSEL array 120, as shown in FIG. Controls the operation of VCSEL collectively.

As shown in FIG. 3, the VCSELs of each column are connected in parallel with each other, and each VCSEL (connected in parallel) is connected to the switch 130 on one side and to the ground terminal (not shown) on the other side. Accordingly, when the switch 130 is shorted and power is supplied to one side of the VCSELs, all of the VCSELs in the corresponding row can operate.

Since the VCSELs in each column are connected in parallel, a significant amount of current must be delivered in order for the VCSELs in that column to operate. Accordingly, as the switch 130 is implemented as a GaN FET, this problem can be solved.

Each VCSEL in the VCSEL array 120 has the structure shown in FIG. 4 .

4 is a diagram showing a first structure of a VCSEL according to an embodiment of the present invention.

4A and 4B , a first electrode 210, an n-type substrate 410, a first reflective layer 420, a cavity layer 430, an oxide film layer 440, a second reflective layer 450, an insulating film (460) and a second electrode.

The n-type substrate 410 allows the first reflective layer 420 to grow on its top. The n-type substrate 410 is doped with a dopant of the same polarity as the first reflective layer 420, so that the first reflective layer 420 can grow on top of it.

The first reflective layer 420 may be implemented as an n-type semiconductor layer doped with an n-type dopant, and may be implemented with various components such as AlGaAs, which is a semiconductor material including Al. The first reflective layer 420 is composed of a plurality of Distributed Bragg Reflector (DBR) pairs. The DBR pair includes a high aluminum composition layer containing a high aluminum (Al) ratio of 85 to 100% and a low aluminum composition layer containing a low aluminum ratio of 0 to 20%. It is implemented as a plurality of pairs as one pair. The first reflective layer 420 includes a greater number of DBR pairs than the second reflective layer 450 and has relatively higher reflectivity. Accordingly, the light or laser oscillated in the cavity layer 430 is oscillated in the direction of the second reflective layer 450 having a relatively low reflectivity due to a relatively small number of pairs.

The cavity layer 430 is a layer in which holes generated from the second reflective layer 450 and electrons generated from the first reflective layer 420 meet and recombine, and light is generated by recombination of electrons and holes. The cavity layer 430 may include a single quantum well (SQW) structure or a multiple quantum well (MQW) structure having a plurality of quantum well layers. When the multi-quantum well structure is included, the cavity layer 430 has a structure in which well layers (not shown) and barrier layers (not shown) having different energy bands are alternately stacked once or more. The well layer (not shown)/barrier layer (not shown) of the cavity layer 430 may be made of InGaAs/AlGaAs, InGaAs/GaAs, or GaAs/AlGaAs.

The oxide film layer 440 undergoes an oxidation process to form an oxidized portion of a certain length, and the characteristics of the output laser and the diameter of the opening are determined according to the length of the oxidized portion. The oxide film layer 440 is composed of aluminum (Al) having a higher concentration than the first reflective layer 420 and the second reflective layer 450 . The higher the aluminum concentration, the higher the rate at which it is oxidized. As the oxide film layer 440 is implemented with a relatively higher aluminum concentration than both reflectors 420 and 450, oxidation can be selectively performed in the subsequent oxidation process. For example, the oxide film layer 440 may be implemented with AlGaAs having an Al ratio of 98% or more, and each of the reflectors 420 and 450 may be implemented with AlGaAs having an Al ratio between 0% and 100%. In FIG. 2 , the oxide film layer 440 is illustrated as being formed at a position adjacent to the second reflective layer 450, but is not necessarily limited thereto, and a position adjacent to the first reflective layer 420 or the first reflective layer 420 and both positions adjacent to the second reflective layer 450 .

The second reflective layer 450 may be implemented as a p-type semiconductor layer doped with a p-type dopant, and may be formed of AlGaAs, a semiconductor material including Al. The second reflective layer 450 is similarly composed of a plurality of DBR pairs. However, as described above, since the first reflective layer 420 includes a relatively smaller number of DBR pairs, it has a relatively low reflectivity. Accordingly, the light or laser oscillated from the cavity layer 430 is oscillated toward the second reflective layer 450 having a relatively low reflectivity due to a relatively small number of pairs.

The insulating film 460 is coated on the second reflective layer 450 and then cured to fix the VCSEL 120 and prevent exposure to the external environment. The insulating layer 460 may be implemented with SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , or the like to perform the above-described operation. The thickness of the insulating film 460 may be implemented within 1/4 of the wavelength band of output light.

The insulating layer 460 includes a hole 465 so that the second reflective layer 450 and the first electrode 210 can be electrically connected.

A hole 465 is formed in the insulating layer 460 , and a metal pad and a first electrode 210 are disposed in the hole 465 to electrically connect the second reflective layer 450 and the first electrode 210 . The first electrode 210 is disposed on all of the VCSELs arranged in each column of the VCSEL array and is used as a common electrode, and can be exposed on top of the VCSEL and connected to the switch 130 (wire bonding).

Since the first electrode is electrically connected to the second reflective layer 450 implemented as a p-type semiconductor layer through the hole 465, it is implemented as an anode.

A second electrode 470 is formed at the lower end of the n-type substrate 410 (in a direction opposite to the direction in which light is output). The second electrode 470 is an electrode commonly used for all VCSELs in a VCSEL array as well as a specific row of VCSELs, and is electrically connected to the first reflective layer 420 through the n-type substrate 410 . Accordingly, the second electrode 470 is implemented as a cathode.

Since the first electrode 210 is exposed over the VCSEL and implemented as an anode, the switch is implemented as a p-type GaN FET.

5 is a diagram showing the structure of a VCSEL array and a switch according to a second embodiment of the present invention.

Referring to FIG. 5, the VCSEL array 120 according to the second embodiment of the present invention has a plurality of VCSELs implemented in each column like the VCSEL array according to the first embodiment, but both the first electrode and the second electrode are upper It has a form revealed by Each column in the VCSEL array 120 has a first common electrode 510 and a second common electrode 520 for each column. Any one common electrode is connected to the switch 130, and a position (eg, 515) of the other common electrode is connected to a ground terminal.

A VCSEL having a form in which all electrodes are exposed upward may be implemented as shown in FIG. 6 .

6 is a diagram showing the structure of a VCSEL according to a second embodiment of the present invention.

Referring to FIG. 6, the VCSEL 120 according to the second embodiment of the present invention includes an n-type substrate 410, a first reflective layer 420, a cavity layer 430, an oxide layer 440, a second reflective layer ( 450), an insulating film 460, a first electrode 510, a second electrode 520, and an undoped substrate 610.

In the VCSEL 120 according to the second embodiment of the present invention, the doped substrate does not support each layer in the VCSEL like the VCSEL according to the first embodiment of the present invention, but is an undoped substrate. Each layer is supported by a substrate 610 .

An n-type substrate 410, a first reflective layer 420, a cavity layer 430, an oxide film layer 440, a second reflective layer 450, an insulating film 460, and a second electrode ( 520) is placed.

Meanwhile, the first electrode 510 is disposed on the n-type substrate 410 in the remaining area (eg, both ends) other than the area where the first reflective layer 420 is disposed. After the first electrode 510 is disposed on the n-type substrate 410 (after all 420 to 460 degrees are disposed on the n-type substrate 410), an insulating film 460 is coated. Accordingly, the first electrode 510 is positioned between the n-type substrate 410 and the insulating film 460 . The first electrode 510 is also implemented as a common electrode like the second electrode 520 .

Meanwhile, the insulating layer 460 includes an additional hole 465b at a position where the first electrode is disposed. Accordingly, the metal pad and the first electrode 510 are also disposed in the hole 465b, and the first electrode 510 may be exposed to the outside.

7 is a circuit diagram between a switch and a plurality of VCSELs according to a second embodiment of the present invention.

Referring to FIG. 7 , the VCSELs of each column in the VCSEL array 120 may be connected in series rather than in parallel. When the VCSELs in each column are connected in series, unlike the case where they are connected in parallel, excessive current does not need to flow through the array, and the amount of current flowing through each VCSEL may not vary due to a difference in internal resistance.

8 is a diagram showing the structure of a VCSEL according to a third embodiment of the present invention.

Referring to FIG. 8 , the VCSEL according to the third embodiment of the present invention may have the structure of the VCSEL according to the first and second embodiments of the present invention. However, the first electrode of a specific VCSEL in the same column is connected to the second electrode of another adjacent VCSEL, and each VCSEL in the same column may be connected in series.

The above description is merely an example of the technical idea of the present embodiment, and various modifications and variations can be made to those skilled in the art without departing from the essential characteristics of the present embodiment. Therefore, the present embodiments are not intended to limit the technical idea of the present embodiment, but to explain, and the scope of the technical idea of the present embodiment is not limited by these embodiments. The scope of protection of this embodiment should be construed according to the claims below, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of rights of this embodiment.

100: VCSEL package
110: substrate
120: VCSEL array
130: switch
140: housing
145: step
150: lens
210, 510, 520: electrode
410: n-type substrate
420: first reflective layer
430: cavity layer
440: oxide layer
450: second reflective layer
460: insulating film
465 Hall
610: undoped substrate

Claims (14)

Board;
a VCSEL array disposed on the substrate;
a switch disposed within a predetermined radius from the VCSEL array to control an operation of the VCSEL array; and
including a housing;
The VCSEL array has m rows and n columns, and includes VCSELs connected in parallel to each column,
The VCSEL,
a first substrate doped with a first polar dopant;
a first reflector disposed on the first substrate and including a plurality of Distributed Bragg Reflector (DBR) pairs;
a second reflector positioned above the first reflector and including a plurality of DBR pairs;
a cavity layer positioned between the first reflector and the second reflector, in which holes generated from one of the first reflector and the second reflector and electrons generated from the other are recombinated;
an oxide layer positioned between the cavity layer and the first reflector or the second reflector to determine characteristics of a laser to be output and a diameter of an opening;
an insulating film coated on the second reflector to protect the first reflector, the second reflector, the cavity layer, and the oxide film layer from the outside;
a first electrode electrically connected to the second reflector to supply power to the second reflector; and
A VCSEL package comprising a second electrode positioned at a lower end of the first substrate and allowing power to be supplied to the first reflector. According to claim 1,
The switch is
A VCSEL package characterized in that it is included as many as n. According to claim 1,
The first electrode is
VCSEL package, characterized in that it is implemented as a common electrode of the VCSEL disposed in each column. According to claim 2 or 3,
Each switch
VCSEL package, characterized in that connected to the first electrode. Board;
a VCSEL array disposed on the substrate;
a switch disposed within a predetermined radius from the VCSEL array to control an operation of the VCSEL array; and
including a housing;
The VCSEL array has m rows and n columns, and includes VCSELs connected in series to each column,
The VCSEL,
a first substrate doped with a first polar dopant;
a first reflector disposed on the first substrate and including a plurality of Distributed Bragg Reflector (DBR) pairs;
a second reflector positioned above the first reflector and including a plurality of DBR pairs;
a cavity layer positioned between the first reflector and the second reflector, in which holes generated from one of the first reflector and the second reflector and electrons generated from the other are recombinated;
an oxide layer positioned between the cavity layer and the first reflector or the second reflector to determine characteristics of a laser to be output and a diameter of an opening;
an insulating film coated on the second reflector to protect the first reflector, the second reflector, the cavity layer, and the oxide film layer from the outside;
a first electrode electrically connected to the second reflector to supply power to the second reflector; and
A VCSEL package comprising a second electrode positioned at a lower end of the first substrate and allowing power to be supplied to the first reflector. According to claim 5,
The switch is
A VCSEL package characterized in that it is included as many as n. According to claim 5,
The first electrode is
VCSEL package, characterized in that it is implemented as a common electrode of the VCSEL disposed in each column. According to claim 6 or 7,
The switch is
VCSEL package, characterized in that wire bonded to the first electrode. Board;
a VCSEL array disposed on the substrate;
a switch disposed within a predetermined radius from the VCSEL array to control an operation of the VCSEL array; and
including a housing;
The VCSEL array has m rows and n columns, and includes VCSELs connected in parallel to each column,
The VCSEL,
undoped substrate;
a first substrate positioned on the undoped substrate and doped with a first polar dopant;
a first reflector disposed on the first substrate and including a plurality of Distributed Bragg Reflector (DBR) pairs;
a second reflector positioned above the first reflector and including a plurality of DBR pairs;
a cavity layer positioned between the first reflector and the second reflector, in which holes generated from one of the first reflector and the second reflector and electrons generated from the other are recombinated;
an oxide layer positioned between the cavity layer and the first reflector or the second reflector to determine characteristics of a laser to be output and a diameter of an opening;
a first electrode electrically connected to the second reflector to supply power to the second reflector;
a second electrode positioned on the first substrate in a remaining area where the first reflector is not located and supplying power to the first reflector; and
and an insulating film coated on the second reflector and the second electrode to protect the first reflector, the second reflector, the cavity layer, the oxide film layer, and the second electrode from the outside. A VCSEL package with . According to claim 9,
the housing,
A VCSEL package comprising a step. According to claim 10,
The VCSEL package further comprises a lens that converts a path of light output from the VCSEL array and is supported by being seated on the step. Board;
a VCSEL array disposed on the substrate;
a switch disposed within a predetermined radius from the VCSEL array to control an operation of the VCSEL array; and
including a housing;
The VCSEL array has m rows and n columns, and includes VCSELs connected in series to each column,
The VCSEL,
undoped substrate;
a first substrate positioned on the undoped substrate and doped with a first polar dopant;
a first reflector disposed on the first substrate and including a plurality of Distributed Bragg Reflector (DBR) pairs;
a second reflector positioned above the first reflector and including a plurality of DBR pairs;
a cavity layer positioned between the first reflector and the second reflector, in which holes generated from one of the first reflector and the second reflector and electrons generated from the other are recombinated;
an oxide layer positioned between the cavity layer and the first reflector or the second reflector to determine characteristics of a laser to be output and a diameter of an opening;
a first electrode electrically connected to the second reflector to supply power to the second reflector;
a second electrode positioned on the first substrate in a remaining area where the first reflector is not located and supplying power to the first reflector; and
and an insulating film coated on the second reflector and the second electrode to protect the first reflector, the second reflector, the cavity layer, the oxide film layer, and the second electrode from the outside. A VCSEL package with . According to claim 12,
The second reflector,
A VCSEL package, characterized in that implemented as a semiconductor layer doped with a dopant of a polarity different from that of the first reflector. According to claim 12,
The insulating film,
and a first hole through which the second reflector and the first electrode are electrically connected.

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