KR20230049869A - Wafer protective tape - Google Patents

Abstract

The present invention relates to a wafer protective tape which includes: a release layer; a soft adhesive layer disposed on the release layer; and a hard layer disposed on the soft adhesive layer and including a polymer resin and a colorant, and satisfies the following general formula 1. General chemical formula 1: 0 % <= │A + B │ <= 1.0 %, wherein A represents the rate of a change (%) in the longitudinal direction after heating the wafer protective tape at 150 deg. C for 1 hour, and B represents the rate of a change (%) in the width direction after heating the wafer protective tape at 150 deg. C for 1 hour.

Description

Wafer Protection Tape {WAFER PROTECTIVE TAPE}

The present invention relates to wafer protection tapes. More specifically, the present invention relates to a wafer protection tape that can replace a role as an epoxy encapsulant for protecting a semiconductor chip, and can achieve thinning and cost reduction.

[0002] In recent years, there has been an increasing demand for thinning and miniaturizing semiconductor devices and their packages. Therefore, as a semiconductor device and its package, a flip chip bonding method in which a semiconductor chip is fixed to a substrate in such a way that bonding pads of the semiconductor chip and circuit patterns of the substrate face each other has been widely used.

Hereinafter, a conventional chip size semiconductor package will be described with reference to the accompanying drawings.

1 is a cross-sectional view showing a conventional chip size semiconductor package.

As shown in FIG. 1 , a conventional chip size semiconductor package 1 includes a substrate 10, at least one semiconductor chip 20 mounted on the substrate 10, and an upper surface of the substrate 10 and a semiconductor It includes an epoxy encapsulant 40 that seals the chip 20 .

Here, circuit patterns 12 are disposed on the substrate 10 , and bonding pads 22 are disposed on the semiconductor chip 20 . For example, the circuit pattern 12 of the substrate 10 and the bonding pad 22 of the semiconductor chip 20 are electrically connected via bumps 30, and a gap exists between the substrate 10 and the semiconductor chip 20. Flip chip bonding physically connected by the filling member 35 to be filled may be performed.

In addition, the epoxy encapsulant 40 is formed to cover the entire rear surface of the semiconductor chip 20 as well as the upper surface of the substrate 10 .

The above-described general chip size semiconductor package 1 is formed by coating and curing the epoxy encapsulant 40 to cover the entire rear surface of the semiconductor chip 20 as well as the upper surface of the substrate 10. Accordingly, a typical chip size semiconductor package 1 requires a lot of processing cost, and has a certain thickness due to the formation of the epoxy encapsulant 40 to cover the entire upper surface of the substrate 10 and the rear surface of the semiconductor chip 20. Since it is a structure that must secure the ideal, there was difficulty in implementing thinning.

The background art of the present invention is disclosed in Korean Patent Registration No. 10-1074571 and the like.

An object of the present invention is to provide a wafer protection tape that can replace a role as an epoxy encapsulant for protecting semiconductor chips, and can achieve thinning and cost reduction.

Another object of the present invention is to provide a wafer protection tape having a light transmittance of 2% or less at a wavelength of 550 nm or less and a light transmittance of 5 to 15% at a wavelength of 1,000 to 1,500 nm.

The object of the present invention is not limited to the above-mentioned object, and other objects and advantages of the present invention not mentioned above can be understood by the following description and will be more clearly understood by the examples of the present invention. It will also be readily apparent that the objects and advantages of the present invention may be realized by means of the instrumentalities and combinations thereof set forth in the claims.

In order to solve the above technical problem, the wafer protection tape according to the present invention is a release layer; a soft adhesive layer disposed on the release layer; and a hard layer disposed on the soft adhesive layer and including a polymer resin and a colorant, which satisfies the following general formula 1.

[Formula 1]

0% ≤ │A + B│≤ 1.0%

(Where A represents the change rate (%) in the longitudinal direction after heating the wafer protection tape at 150 ° C. for 1 hour, and B represents the change rate (%) in the width direction after heating the wafer protection tape at 150 ° C. for 1 hour. Indicates the rate of change (%).)

Here, the release layer has a thickness of 25 to 50 μm, the soft adhesive layer has a thickness of 10 to 50 μm, and the hard layer has a thickness of 10 to 50 μm.

The hard layer includes 90 to 95% by weight of the polymer resin and 5 to 10% by weight of the colorant.

The polymer resin includes at least one selected from among PI, PEEK and PEN.

The colorant includes at least one selected from black pigments including carbon black, iron oxide, manganese dioxide, aniline black, and activated carbon.

In addition, the soft adhesive layer includes 60 to 75 wt% of a thermoplastic resin, 10 to 25 wt% of an epoxy resin, 2 to 10 wt% of a curing agent, 4 to 15 wt% of an inorganic filler, 0.1 to 2 wt% of a curing accelerator, and 0.1 to 4 wt% of a coupling agent. Including weight percent.

The thermoplastic resin has a number average molecular weight of 300,000 to 1,000,000.

The wafer protection tape has a storage modulus of 3,000 to 8,000 MPa at 25°C.

The wafer protection tape has a light transmittance of 2% or less at a wavelength of 550 nm or less, and a light transmittance of 5 to 15% at a wavelength of 1,000 to 1,500 nm.

In addition, the wafer protection tape may further include a protection layer disposed on the hard layer.

The wafer protection tape according to the present invention has a structure in which a soft adhesive layer and a hard layer are sequentially laminated on a release layer, and the soft adhesive layer and the hard layer can replace the epoxy encapsulant, so it is possible to eliminate the epoxy encapsulant .

Therefore, the wafer protection tape according to the present invention can replace the role of an epoxy encapsulant for protecting semiconductor chips, and has a thin thickness of an ultra-thin layer in which a soft adhesive layer and a hard layer are sequentially laminated on the release layer.

As a result, when the wafer protection tape according to the present invention is manufactured as a final product, a chip-size semiconductor package, it is possible to attach it to selectively protect only the rear surface of a semiconductor chip, so it can have an ultra-thin structure and can replace epoxy encapsulant By applying a thin wafer protection tape, cost can be drastically reduced.

The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description below.

In addition to the effects described above, specific effects of the present invention will be described together while explaining specific details for carrying out the present invention.

1 is a cross-sectional view showing a conventional chip size semiconductor package.
2 is a cross-sectional view showing a chip size semiconductor package according to an embodiment of the present invention.
Figure 3 is a cross-sectional view showing a wafer protection tape according to an embodiment of the present invention.
4 is a cross-sectional view showing a wafer protection tape according to a modified example of the present invention.

The above objects, features and advantages will be described later in detail with reference to the accompanying drawings, and accordingly, those skilled in the art to which the present invention belongs will be able to easily implement the technical spirit of the present invention. In describing the present invention, if it is determined that the detailed description of the known technology related to the present invention may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to indicate the same or similar components.

In the present specification, the arrangement of an arbitrary element on the "upper (or lower)" or "upper (or lower)" of a component means that an arbitrary element is placed in contact with the upper (or lower) surface of the component. In addition, it may mean that other components may be interposed between the component and any component disposed on (or under) the component.

Singular expressions used herein include plural expressions unless the context clearly dictates otherwise. In this application, terms such as "consists of" or "includes" should not be construed as necessarily including all of the various components described in the specification, some of which may not be included, or additional configurations It should be construed as possibly including more elements.

Hereinafter, a wafer protection tape according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

2 is a cross-sectional view showing a chip size semiconductor package according to an embodiment of the present invention.

As shown in FIG. 2 , a chip size semiconductor package 300 according to an embodiment of the present invention includes a substrate 210, at least one semiconductor chip 220 mounted on the substrate 210, and a semiconductor chip ( 220) includes a wafer protection tape 100.

Here, circuit patterns 212 are disposed on the substrate 210 , and bonding pads 222 are disposed on the semiconductor chip 220 . For example, the circuit pattern 212 of the substrate 210 and the bonding pad 222 of the semiconductor chip 220 are electrically connected via bumps 230, and a gap exists between the substrate 210 and the semiconductor chip 220. Flip chip bonding that is physically connected by the filling member 235 to be filled may be performed.

Unlike the conventional epoxy encapsulant, the wafer protection tape 100 of the present invention is disposed to cover only the rear surface of the semiconductor chip 220 and has a thickness of about 70% or less of the thickness of the epoxy encapsulant.

Accordingly, the wafer protection tape 100 of the present invention, unlike the conventional epoxy encapsulant, does not have the wafer protection tape 100 attached to the substrate 210, and selectively covers only the rear surface of the semiconductor chip 220. Because of the structure, it is possible to significantly reduce the thickness and amount of use compared to conventional epoxy encapsulants.

When the wafer protection tape 100 is applied to the chip size semiconductor package 300, an attachment operation is performed at the wafer level to improve production yield.

That is, the wafer protection tape 100 is cured while attached to the back surface of the back-grinding semiconductor wafer. Thereafter, a laser marking process is performed on the wafer protection tape 100 attached to the back side of the semiconductor wafer, and after attaching the sawing tape to the front side of the semiconductor wafer, flip chip bonding to the substrate 210 in a state of being cut into individual chips. It is to be manufactured as a chip size semiconductor package (300).

Here, the wafer protection tape 100 of the present invention may have a two-layer structure in which a soft adhesive layer 140 and a hard layer 160 are sequentially stacked. Here, the soft adhesive layer 140 of the wafer protection tape 100 is attached so as to come into contact with the back surface of the semiconductor chip 220 .

The chip-size semiconductor package 300 according to the embodiment of the present invention described above has mechanical strength capable of protecting the back side of the semiconductor chip 220 and has excellent laser marking characteristics, by introducing the wafer protection tape 100, It may become possible to promote thinning while replacing the epoxy encapsulant.

In this way, the chip size semiconductor package 300 according to an embodiment of the present invention can replace the role of an epoxy encapsulant protecting the semiconductor chip 220, and the soft adhesive layer 140 and the hard layer 160 It has a thin thickness of ultra-thin, which is laminated in turn.

Therefore, since the chip size semiconductor package 300 according to an embodiment of the present invention can be attached to selectively protect only the rear surface of the semiconductor chip 220, it can have an ultra-thin structure and can replace the epoxy encapsulant. The application of the thin-walled wafer protection tape 100 can drastically reduce costs.

Hereinafter, a wafer protection tape according to an embodiment of the present invention will be described in more detail with reference to the accompanying drawings.

3 is a cross-sectional view showing a wafer protection tape according to an embodiment of the present invention.

Referring to FIG. 3 , the wafer protection tape 100 according to an embodiment of the present invention includes a release layer 120 , a soft adhesive layer 140 and a hard layer 160 .

The release layer 120 serves to protect the soft adhesive layer 140 . When the release layer 120 is bonded to the semiconductor wafer, it is removed and bonded to the semiconductor wafer via the soft adhesive layer 140 .

The release layer 120 preferably has a thickness of 25 to 50 μm, and more preferably has a thickness of 30 to 45 μm.

The release layer 120 protects the soft adhesive layer 140 from damage caused by external factors such as scratches. The release layer 120 may be formed of at least one resin selected from among polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyimide (PI), and polyamideimide (PAI). .

The soft adhesive layer 140 is disposed on the release layer 120 . The soft adhesive layer 140 is used for bonding with a semiconductor wafer as well as mitigating impact. To this end, it is preferable to use the wafer protection tape 100 according to the embodiment of the present invention by attaching it to a semiconductor wafer in a state in which the release layer 120 attached to the lower portion of the soft adhesive layer 140 is removed.

The soft adhesive layer 140 preferably has a thickness of 10 to 50 μm, and a more preferable thickness range may be 15 to 30 μm. If the thickness of the soft adhesive layer 140 is less than 10 μm, there is a risk that sufficient impact resistance may not be secured. Conversely, if the thickness of the soft adhesive layer 140 exceeds 50 μm, it is disadvantageous to thinning due to excessive thickness design. .

The soft adhesive layer 140 includes 60 to 75 wt% of a thermoplastic resin, 10 to 25 wt% of an epoxy resin, 2 to 10 wt% of a hardener, 4 to 15 wt% of an inorganic filler, 0.1 to 2 wt% of a hardening accelerator, and 0.1 to 4 wt% of a coupling agent. Including weight percent.

Here, the thermoplastic resin preferably has a number average molecular weight of 300,000 to 1,000,000, and a more preferable number average molecular weight range of 700,000 to 900,000 may be suggested. When the number average molecular weight of the thermoplastic resin is less than 300,000, there may be a problem in that reliability is lowered due to insufficient heat resistance. Conversely, when the number average molecular weight of the thermoplastic resin exceeds 1,000,000, cohesive force is excessive and initial adhesion characteristics may be deteriorated, which is not preferable.

As such a thermoplastic resin, an acrylic copolymer resin may be used, preferably an acrylic copolymer resin having a glass transition temperature of 10 ° C to 20 ° C, and more preferably an acrylic copolymer resin having a glass transition temperature of 12 ° C to 18 ° C. can The acrylic copolymer resin may be a copolymer of ethyl acrylate, butyl acrylate, methyl methacrylate, glycidyl acrylate and acrylonitrile. In this case, glycidyl acrylate and acrylonitrile, which are monomers of the copolymer, may be copolymerized in a weight ratio of 6.5 to 12, and more preferably, glycidyl acrylate and acrylonitrile may be copolymerized in a weight ratio of 8 to 10. there is.

The thermoplastic resin is preferably added in a content ratio of 60 to 75% by weight of the total weight of the soft adhesive layer 140, and a more preferable range may be 62 to 73% by weight. If the addition amount of the thermoplastic resin is less than 60% by weight, the elasticity of the soft adhesive layer 140 is insufficient before curing, and thus the adhesive effect is low and manufacturing is difficult. Conversely, when the amount of the thermoplastic resin added exceeds 75% by weight, the total degree of crosslinking is low, resulting in a decrease in adhesive strength and insufficient heat resistance after curing.

As the epoxy resin, it is preferable to use a mixture of a bisphenol-based epoxy resin and a cresol novolak-based epoxy resin in a weight ratio of 1: 0.2 to 1: 1.2, and a more preferable range is 1: 0.6 to 1: 1 in weight ratio. can do. At this time, when the amount of cresol novolak-based epoxy resin used is less than 0.2 weight ratio compared to the bisphenol-based epoxy resin, heat resistance may be insufficient due to lack of crosslinking points forming three-dimensional crosslinking, and the amount of cresol novolak-based epoxy resin used is 1.2% compared to the bisphenol-based epoxy resin. When the weight ratio is exceeded, the crosslinking degree is too high, and there may be a problem in that the impact resistance is vulnerable. In addition, the bisphenol-based epoxy resin is a bisphenol A epoxy resin having an equivalent weight of 400 to 500 g / eq and a softening point of 57 to 70 ° C, more preferably a bisphenol A epoxy resin having an equivalent weight of 440 to 495 g / eq and a softening point of 60 ° C to 68 ° C. It is good to do. In addition, the cresol novolak-based epoxy resin may use a cresol novolac epoxy resin having an equivalent weight of 150 to 250 g/eq and a softening point of 48 to 54° C., more preferably an equivalent weight of 180 to 220 g/eq and a softening point of 50 to 54° C. It is preferable to use phosphorus cresol novolac epoxy resin.

The epoxy resin is preferably added in a content ratio of 10 to 25% by weight of the total weight of the soft adhesive layer 140, and 14 to 19% by weight may be suggested as a more preferable range. When the added amount of the epoxy resin is less than 10% by weight, there may be a problem of insufficient adhesive strength after curing. Conversely, if the amount of the epoxy resin added exceeds 25% by weight, brittleness before and after curing is strong, resulting in a decrease in adhesive effect during cutting, and there may be a problem in impact resistance after curing.

As the curing agent, a general curing agent used in the art may be used, preferably a phenol novolac resin having an OH equivalent weight of 95 to 120 g/eq and a softening point of 110 to 130 ° C., more preferably an OH equivalent weight of 100 to 110 g It is recommended to use a phenolic novolak resin with /eq and a softening point of 115 ° C to 125 ° C.

The curing agent is preferably added in a content ratio of 2 to 10% by weight of the total weight of the soft adhesive layer 140, and a more preferable range may be 4 to 7% by weight. When the addition amount of the curing agent is less than 2% by weight, the crosslinking density after curing is too low, and there may be a problem of insufficient adhesive strength. Conversely, when the added amount of the curing agent exceeds 10% by weight, reliability may deteriorate due to the remaining unreacted curing agent.

The inorganic filler serves to supplement dimensional stability and heat resistance, and at least one selected from silica, alumina, carbon black, titanium dioxide, and barium titanate may be used. In addition, it is preferable to use inorganic fillers having an average particle diameter of 10 to 100 nm, and more preferably to use those having an average particle diameter of 20 to 40 nm.

The inorganic filler is preferably added in a content ratio of 4 to 15% by weight of the total weight of the soft adhesive layer 140, and 7 to 12% by weight may be presented as a more preferable range. If the addition amount of the inorganic filler is less than 4% by weight, the thermal expansion coefficient may increase and the adhesive force with the semiconductor wafer may decrease due to thermal expansion and contraction. Conversely, when the amount of the inorganic filler added exceeds 15% by weight, there may be a problem in that the adhesive strength is significantly lowered.

The curing accelerator serves to accelerate curing when the B-stage soft layer is applied to the semiconductor chip and then cured by applying heat, and an imidazole-based curing accelerator or a phosphorus-based curing accelerator may be used, preferably. It is preferable to use an imidazole-based curing accelerator. At this time, the imidazole-based curing accelerator is Shikoku's 2E4MZ, 2E4MZ-A, 2E4MZ-CN, 2PZ, 2PZ-CN, 2P4MZ, C11Z, C11Z-CN, C11Z-CNS, C17Z, 2MZ, 2MZ-H, 2PHZ -S, 2PHZ-PW, 2P4MHZ-PW, and at least one selected from TBZ may be included. In addition, the phosphorus-based curing accelerator is triphenylphosphine, tributylphosphine, tritolylphosphine, trixylylphosphine, phosphine oxide, triphenylphosphonium tetraphenylborate, tetraphenylphosphonium and tetraphenylporate. One or more selected species may be included.

The hardening accelerator is preferably added in a content ratio of 0.1 to 2% by weight of the total weight of the soft adhesive layer 140, and 0.3 to 0.6% by weight may be presented as a more preferable range. If the addition amount of the curing accelerator is less than 0.1% by weight, the curing time of the product during the process may be too long, resulting in a significant decrease in productivity. Conversely, when the curing accelerator is added in excess of 1% by weight, there may be a problem in that the shelf life is reduced due to lack of stability over time.

The coupling agent serves to increase adhesion due to chemical bonding between the surface of the inorganic filler and the organic material, and a general coupling agent used in the art may be used, but a silane coupling agent may be preferably used.

The coupling agent is preferably added in a content ratio of 0.1 to 4% by weight of the total weight of the soft adhesive layer 140, and a more preferable range may be 0.3 to 2.0% by weight. If the amount of the coupling agent is less than 0.1% by weight, the surface of the inorganic filler may not be sufficiently covered, resulting in a decrease in adhesive strength. Conversely, when the amount of the coupling agent is excessively added, exceeding 4% by weight, the content of the volatile low-molecular-weight substance becomes too high, and reliability may deteriorate due to the remaining coupling agent.

The hard layer 160 is disposed on the soft adhesive layer 140 and includes a polymer resin and a colorant.

The hard layer 160 preferably has a thickness of 10 to 50 μm, and a more preferable thickness range may be 12.5 to 25 μm. When the thickness of the hard layer 160 is less than 10 μm, it may be difficult to secure sufficient durability and strength. Conversely, when the thickness of the hard layer 160 exceeds 50 μm, it becomes unnecessarily thick, which is disadvantageous to thin film and light weight.

The hard layer 160 includes 90 to 95% by weight of a polymer resin and 5 to 10% by weight of a colorant.

The polymer resin includes at least one selected from polyimide (PI), polyetherether ketone (PEEK), and polyethylene naphthalate film (PEN), and among these, it is more preferable to use PI.

The colorant includes at least one selected from black pigments including carbon black, iron oxide, manganese dioxide, aniline black, and activated carbon.

Here, when the amount of the colorant added is less than 5% by weight of the total weight of the hard layer 160, the laser marking performance may be insufficient due to an increase in transmittance, so it may be difficult to use it as a substitute for the epoxy encapsulant. Conversely, when the amount of the colorant is added in excess of 10% by weight of the total weight of the hard layer 160, the hardness of the film increases, and there is a concern that the inspection cannot be performed in the final product because IR transmission is not performed. there is.

The hard layer 160 has excellent laser marking characteristics while having mechanical strength capable of protecting the rear surface of a semiconductor chip by using a polymer resin having excellent strength and hardness, in particular, a polymer resin made of polyimide (PI).

As a result, when the wafer protection tape 100 according to the embodiment of the present invention is bonded to the back surface of a semiconductor wafer via the soft adhesive layer 140, the hard layer 160 disposed on the soft adhesive layer 140 forms a protective film. It is possible to apply a thin thickness while being able to replace the role of an epoxy encapsulant that protects the semiconductor chip from external impact by forming a thinning can be achieved.

In addition, the wafer protection tape 100 according to an embodiment of the present invention can replace the role of an epoxy encapsulant for protecting semiconductor chips, and the soft adhesive layer 140 and the hard layer ( 160) has a thin thickness of an ultra-thin layer that is sequentially laminated. Therefore, when the wafer protection tape 100 according to an embodiment of the present invention is manufactured as a final product, a chip-size semiconductor package, it is possible to selectively attach only the rear surface of a semiconductor chip to protect it, so it can have an ultra-thin structure, and epoxy Since it can be applied as a thin wafer protection tape 100 instead of an encapsulant, it has a structural advantage that can drastically reduce costs.

In addition, the wafer protection tape 100 according to an embodiment of the present invention satisfies the following [General Formula 1].

[Formula 1]

0% ≤ │A + B│≤ 1.0%

Here, A represents the change rate (%) in the longitudinal direction (MD direction) after heating the wafer protection tape at 150 ° C. for 1 hour, and B represents the width direction after heating the wafer protection tape at 150 ° C. for 1 hour ( TD direction) represents the rate of change (%).

As described above, the wafer protection tape 100 according to the embodiment of the present invention has a laminated structure in which the soft adhesive layer 140 and the hard layer 160 are sequentially laminated, so that the shrinkage rate hardly changes even in a high temperature environment. proved through.

In addition, the wafer protection tape 100 according to an embodiment of the present invention has a storage modulus of 3,000 to 8,000 MPa at 25°C.

In addition, the wafer protection tape 100 according to an embodiment of the present invention has a light transmittance of 2% or less at a wavelength of 550 nm or less, and a light transmittance of 5 to 15% at a wavelength of 1,000 to 1,500 nm.

Meanwhile, FIG. 4 is a cross-sectional view showing a wafer protection tape according to a modified example of the present invention.

As shown in FIG. 4, the wafer protection tape 100 according to the modified example of the present invention, with reference to FIG. 3, except that it further includes a protective layer 180 disposed on the hard layer 160. It has substantially the same configuration as the wafer protection tape according to the described embodiment.

Here, the protective layer 180 serves to protect the hard layer 160 . Like the release layer 120, the protective layer 180 is preferably removed when attaching to the semiconductor wafer.

The protective layer 180, like the release layer 120, preferably has a thickness of 25 to 50 μm, and more preferably has a thickness of 30 to 45 μm.

The protective layer 180 protects the hard film from damage caused by external factors such as scratches. Like the release layer 120, the protective layer 180 is selected from polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyimide (PI), and polyamideimide (PAI). It may be formed of one or more selected resins.

As described above, the wafer protection tape according to the embodiment of the present invention has a structure in which a soft adhesive layer and a hard layer are sequentially laminated on a release layer, and the soft adhesive layer and the hard layer can replace the epoxy encapsulant, It is possible to eliminate the epoxy encapsulant.

Therefore, the wafer protection tape according to an embodiment of the present invention can replace the role of an epoxy encapsulant that protects a semiconductor chip, and also reduces the thickness of an ultra-thin film in which a soft adhesive layer and a hard layer are sequentially laminated on a release layer. have

As a result, when the wafer protection tape according to the embodiment of the present invention is manufactured as a final product, a chip-size semiconductor package, it is possible to selectively attach only the rear surface of the semiconductor chip to protect it, so it can have an ultra-thin structure, and an epoxy encapsulant It is possible to drastically reduce costs by applying a thin wafer protection tape instead of .

Hereinafter, the configuration and operation of the present invention will be described in more detail through preferred embodiments of the present invention. However, this is presented as a preferred example of the present invention and cannot be construed as limiting the present invention by this in any sense.

Contents not described in this specification can be sufficiently technically inferred by those skilled in the art, so the description thereof will be omitted.

<Production Example>

1. Manufacture of wafer protection tape

Example 1

As a thermoplastic resin, it has a number average molecular weight of 800,000 and a glass transition temperature of 15 ° C. Acrylic copolymer containing 3% by weight of glycidyl acrylate (Company N, trade name: SG-P3) 67% by weight, equivalent weight 475 g / eq, and softening point Bisphenol A epoxy resin (K Chemicals, trade name: YD-011) at 65 ° C. 8% by weight, equivalent weight 200 g / eq and softening point 52 ° C. cresol novolac epoxy resin (K Chemicals, trade name: YDCN 1P) 8% by weight, curing agent As OH equivalent 106 g / eq and softening point 120 ℃ phenol novolac resin (Kolon Petrochemical Co., Ltd. trade name: KPH-F2004) 6% by weight, average particle diameter 15 ~ 17 ㎚ Silica (E company Aerosil R972) 9.5% by weight, cured A soft adhesive composition prepared by mixing 0.5% by weight of an imidazole compound (Cuazole 2PH, manufactured by Shikoku Kasei) as an accelerator and 1% by weight of a silane coupling agent (KBM-303, manufactured by Shin-Etsu) was prepared.

Next, having a thickness of 25 μm, the soft adhesive composition prepared by the above method was cast on one side of the hard layer made of PI material to which black pigment was added, and dried in hot air at 140 ° C. for 5 minutes to obtain a soft adhesive composition having a thickness of 20 μm. The layers were formed to prepare a wafer protection tape. Here, the black pigment was added in an amount of 7wt% based on 100wt of the entire hard film.

Examples 2 to 5 and Comparative Examples 1 to 2

Wafer protection tapes according to Examples 2 to 5 and Comparative Examples 1 to 2 were prepared in the same manner as in Example 1, except that those described in Table 1 were used as the hard layer.

[Table 1]

2. Property evaluation

Table 2 shows the evaluation results of physical properties of the wafer protection tapes manufactured according to Examples 1 to 5 and Comparative Examples 1 to 2.

1) Storage modulus

The storage modulus was measured using a dynamic thermomechanical analyzer (Perkin Elmer, Diamond DMA). A specimen laminated with 50 layers in size of 20 mm × 5 mm (width × height) was measured according to the measurement method by applying a measurement temperature of -30 ° C to 300 ° C (heating rate 10 ° C / min) and a measurement frequency of 10 Hz, and at 25 ° C The storage modulus values are shown.

2) Permeability

Transmittance was measured using an ultraviolet-visible light spectrometer (Perkin Elmer, Lambda 1050+) under the conditions of a measurement range of 2,500 to 250 nm, a measurement interval of 1 nm, and a measurement speed of 284.37 nm/min, and the transmittance values measured at 532 nm and 1,260 nm were obtained. showed up

3) Shrinkage rate

For the shrinkage rate, a specimen having a size of 100 mm × 100 mm (width × length) was heated at 150 ° C. for 1 hour using a 3D scanner, and the shrinkage rates in the longitudinal and transverse directions before and after heating were measured.

[Table 2]

As shown in Table 2, the wafer protection tapes prepared according to Examples 1 to 5 had a storage modulus of 3,000 to 8,000 MPa at 25 ° C. corresponding to the target value, a light transmittance of 2% or less at a wavelength of 550 nm or less, and a light transmittance of 1,000 It can be seen that all of the light transmittance values of 5 to 15% are satisfied at a wavelength of ~ 1,500 nm.

In addition, the wafer protection tapes prepared according to Examples 1 to 5 showed no significant change in the change rate in the longitudinal direction (A) and the change rate in the width direction, and as a result, the shrinkage rate |A + B│ was 1.0% or less, more specifically 0.11 It was confirmed that the following was satisfied.

On the other hand, the wafer protection tape prepared according to Comparative Example 1 satisfied the target values for the storage modulus and shrinkage at 25 ° C, but the light transmittance at wavelengths of 532 nm and 1,260 nm did not satisfy all target values. .

In addition, the wafer protection tape prepared according to Comparative Example 2 satisfied the target values in light transmittance at wavelengths of 532 nm and 1,260 nm, but both the storage modulus and shrinkage at 25 ° C were outside the target values.

3. Fairness evaluation

Table 3 shows the fairness evaluation results using the wafer protection tapes manufactured according to Examples 1 to 5 and Comparative Examples 1 to 2.

1) Impact resistance

After attaching the wafer protection tape to a silicon wafer chip with a size of 9mm × 12mm × 300㎛ (width × length × thickness) and curing it, beads with a diameter of 50 mm and a weight of 500 g are freely dropped from a height of 250 mm to prevent cracks in the silicon wafer chip at the bottom. It was judged under a microscope. At this time, it was confirmed whether or not cracks with a size of 1 mm or more were generated.

2) Non-destructive testing (EV Group, EVG20)

The silicon wafer chip to which the wafer protection tape was attached was judged to be good if four-side inspection was possible through an IR inspector, and bad if not possible.

3) Evaluation of laser marking characteristics (EO techinics, GEF211)

Laser marking was performed with Green laser 532nm Power 0.2W, font size 200 × 300㎛. At this time, with a microscope that magnified the letters engraved with the laser 50 times, it was judged good when it could be identified, and bad when it was impossible.

4) Evaluation of chip warpage

Wafer protection tape was attached to a silicon wafer chip with a size of 10mm × 10mm × 100㎛ (width × length × thickness) and cured at 150 ° C for 2 hours. determined.

[Table 3]

As shown in Table 3, as a result of processability evaluation using the wafer protection tapes manufactured according to Examples 1 to 5, impact resistance, non-destructive inspection, laser marking characteristics, and chip warpage evaluation were all evaluated as good.

On the other hand, in the fairness evaluation using the wafer protection tape manufactured according to Comparative Example 1, the impact resistance, non-destructive test and chip warpage evaluation were good, but it was confirmed that the laser marking characteristics were not good, which is because the hard layer without the black pigment was added. It is believed to be due to its use.

In addition, in the fairness evaluation using the wafer protection tape manufactured according to Comparative Example 2, it was confirmed that the non-destructive inspection and laser marking characteristics were good, but the impact resistance and chip warpage evaluation characteristics were not good. This is because a PET film is used as a hard layer. It is judged to be caused by

As described above, the present invention has been described with reference to the drawings illustrated, but the present invention is not limited by the embodiments and drawings disclosed herein, and various modifications are made by those skilled in the art within the scope of the technical idea of the present invention. It is obvious that variations can be made. In addition, although the operation and effect according to the configuration of the present invention have not been explicitly described and described while describing the embodiments of the present invention above, it is natural that the effects predictable by the corresponding configuration should also be recognized.

100: wafer protection tape
120: release layer
140: soft adhesive layer
160: hard layer

Claims (10)

release layer;
a soft adhesive layer disposed on the release layer; and
A hard layer disposed on the soft adhesive layer and including a polymer resin and a colorant;
Characterized in that it satisfies the following general formula 1,
Wafer Protection Tape.

[Formula 1]
0% ≤ │A + B│≤ 1.0%
(Where, A represents the change rate (%) in the longitudinal direction after heating the wafer protection tape at 150 ° C. for 1 hour, and B represents the change rate (%) in the width direction after heating the wafer protection tape at 150 ° C. for 1 hour. Indicates the rate of change (%).)
According to claim 1,
The release layer has a thickness of 25 to 50 μm,
The soft adhesive layer has a thickness of 10 to 50 μm,
The hard layer is characterized in that it has a thickness of 10 ~ 50㎛,
Wafer Protection Tape.
According to claim 1,
The hard layer is
Characterized in that it comprises 90 to 95% by weight of the polymer resin and 5 to 10% by weight of the colorant,
Wafer Protection Tape.
According to claim 3,
The polymer resin is
Characterized in that it contains at least one selected from PI, PEEK and PEN,
Wafer Protection Tape.
According to claim 3,
The colorant
Characterized in that it comprises at least one selected from black pigments including carbon black, iron oxide, manganese dioxide, aniline black and activated carbon,
Wafer Protection Tape.
According to claim 1,
The soft adhesive layer is
60 to 75% by weight of thermoplastic resin, 10 to 25% by weight of epoxy resin, 2 to 10% by weight of curing agent, 4 to 15% by weight of inorganic filler, 0.1 to 2% by weight of curing accelerator, and 0.1 to 4% by weight of coupling agent characterized by,
Wafer Protection Tape.
According to claim 6,
The thermoplastic resin is
Characterized in that it has a number average molecular weight of 300,000 to 1,000,000,
Wafer Protection Tape.
According to claim 1,
The wafer protection tape,
Characterized in that it has a storage modulus of 3,000 to 8,000 MPa at 25 ° C,
Wafer Protection Tape.
According to claim 1,
The wafer protection tape,
It has a light transmittance of 2% or less at a wavelength of 550 nm or less,
Characterized in that it has a light transmittance of 5 to 15% at a wavelength of 1,000 to 1,500 nm,
Wafer Protection Tape.
According to claim 1,
The wafer protection tape,
a protective layer disposed on the hard layer;
Characterized in that it further comprises,
Wafer Protection Tape.

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