KR20230035283A - Active current compensation device capable of detecting malfunction - Google Patents

Abstract

The present invention relates to an active current compensation device capable of actively compensating a noise generated in a common mode to each of at least two high current paths. The active current compensation device includes: a sensing part generating an output signal corresponding to a common mode noise current on the high current path; an amplification part amplifying the output signal to generate an amplified current; a compensation part generating a compensation current based on the amplified current and leading the compensation current to flow to each of the at least two high current paths; and a malfunction detection part detecting a malfunction of the amplification part. At least a portion of the amplification part and the malfunction detection part are internalized in one integrated circuit (IC) chip.

Description

Active current compensation device capable of detecting malfunction {ACTIVE CURRENT COMPENSATION DEVICE CAPABLE OF DETECTING MALFUNCTION}

Embodiments of the present invention relate to an active current compensation device capable of detecting a malfunction, and to an active current compensation device that actively compensates for noise input in a common mode on two or more high current paths connected to a power system.

In general, electric devices such as home appliances, industrial electric appliances, or electric vehicles emit noise while operating. For example, noise may be emitted through a power line due to a switching operation of a power converter in an electronic device. If such noise is left unattended, it is not only harmful to the human body, but also causes malfunction or failure of peripheral parts and other electronic devices. As such, electromagnetic interference that an electronic device has on other devices is called EMI (Electromagnetic Interference), and among them, noise transmitted via wires and board wiring is called Conducted Emission (CE) noise.

In order for electronic devices to operate without causing failure to peripheral parts and other devices, EMI noise emissions are strictly regulated in all electronic products. Accordingly, most electronic products necessarily include a noise reduction device (eg, an EMI filter) for reducing EMI noise current in order to satisfy regulations on noise emission. For example, in white goods such as air conditioners, electric vehicles, aviation, energy storage systems (ESS), etc., EMI filters are necessarily included. A conventional EMI filter uses a common mode choke (CM choke) to reduce common mode (CM) noise among conducted emission (CE) noise. The common mode (CM) choke is a passive filter that 'suppresses' the common mode noise current.

Meanwhile, in order to maintain the noise reduction performance of the passive EMI filter in a high-power system, the size or number of common mode chokes must be increased. This significantly increases the size and cost of passive EMI filters in high-power products.

In order to overcome the limitations of the above passive EMI filters, interest in active EMI filters has emerged. An active EMI filter can remove EMI noise by detecting EMI noise and generating a signal that cancels out the noise. An active EMI filter includes an active circuit part capable of generating an amplified signal from a detected noise signal.

However, there is a problem that it is difficult to identify the failure of the active circuit unit with the naked eye. In addition, since the active EMI filter only performs a noise reduction function, even if the active circuit unit fails, the power system can still operate normally, so it is difficult to determine the failure of the active circuit unit from the phenomenon.

The present invention has been made to improve the above problems, and an object of the present invention is to provide an active current compensation device capable of detecting a malfunction. In particular, an object of the present invention is to provide an active current compensation device in which an active circuit unit and a malfunction detection circuit are internalized together in a single integrated circuit (IC) chip.

However, these tasks are illustrative, and the scope of the present invention is not limited thereby.

According to an embodiment of the present invention, an active current compensator for actively compensating for noise generated in a common mode in each of at least two high current paths includes a sensing device for generating an output signal corresponding to a common mode noise current on the high current path. wealth; an amplification unit generating an amplification current by amplifying the output signal; a compensating unit generating a compensating current based on the amplified current and allowing the compensating current to flow through each of the at least two large current paths; and a malfunction detection unit configured to detect a malfunction of the amplification unit, wherein at least a portion of the amplification unit and the malfunction detection unit may be internalized in a single integrated circuit (IC) chip.

According to an embodiment, signals from two nodes included in the amplification unit may be differentially input to the malfunction detection unit.

According to an embodiment, the amplification unit may include a first transistor and a second transistor, and one node of the first transistor and one node of the second transistor may be connected to an input terminal of the malfunction detection unit.

According to an embodiment, the malfunction detection unit may detect a differential DC voltage at two nodes included in the amplification unit and detect whether the differential DC voltage is within a predetermined range.

According to an embodiment, the integrated circuit chip includes a terminal connected to a power supply supplying power to the amplifier and the malfunction detection unit, a terminal connected to a reference potential of the amplifier and the malfunction detection unit, and An output terminal of the malfunction detection unit may be included.

According to one embodiment, the integrated circuit chip may include a terminal connected to a switch for selectively supplying power to the malfunction detection unit.

Other aspects, features and advantages other than those described above will become apparent from the following drawings, claims and detailed description of the invention.

The active current compensation device according to various embodiments of the present invention configured as described above can reduce the price, area, volume, weight, and heat generation compared to a passive filter composed of a CM choke in a high power system.

In addition, the active current compensation device according to various embodiments of the present disclosure may detect a failure or malfunction of an active circuit unit.

In addition, in various embodiments of the present invention, an integrated circuit (IC) chip in which an active circuit unit and a malfunction detection unit are both internalized may be provided. By internalizing the malfunction detection unit in the chip in which the active circuit unit is integrated, the size and price can be reduced compared to the case of separately configuring the malfunction detection unit using general commercial devices.

In addition, by integrating the active circuit unit and the malfunction detection unit into one IC chip, the IC chip can be commercialized with versatility as an independent component.

In addition, the current compensation device including the IC chip may be manufactured as an independent module and commercialized. This current compensating device can detect a malfunction as an independent module regardless of the characteristics of the surrounding electrical system.

Of course, the scope of the present invention is not limited by these effects.

1 schematically shows the configuration of a system including an active current compensation device 100 according to an embodiment of the present invention.
2 shows the inclusion relationship of the amplification unit 130, the malfunction detection unit 180, and the IC chip 500 according to an embodiment of the present invention.
FIG. 3 shows a more specific example of the embodiment shown in FIG. 1, and schematically illustrates an active current compensation device 100A according to an embodiment of the present invention.
FIG. 4 shows a more specific example of the embodiment shown in FIG. 3 and schematically illustrates an active current compensation device 100A-1 according to an embodiment of the present invention.
FIG. 5 shows another more specific example of the embodiment shown in FIG. 3, and schematically illustrates an active current compensation device 100A-2 according to an embodiment of the present invention.
6 shows a functional configuration of the malfunction detection unit 180 according to an embodiment of the present invention.
7 is a schematic diagram of a logic circuit 184 according to one embodiment of the present invention.
8 is a circuit diagram of the active element unit 132 and the malfunction detection unit 180 according to an embodiment of the present invention.
9 schematically shows the configuration of an active current compensation device 100B according to another embodiment of the present invention.

Since the present invention can apply various transformations and have various embodiments, specific embodiments will be illustrated in the drawings and described in detail in the detailed description. Effects and features of the present invention, and methods for achieving them will become clear with reference to the embodiments described later in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when describing with reference to the drawings, the same or corresponding components are assigned the same reference numerals, and overlapping descriptions thereof will be omitted. .

In the following embodiments, terms such as first and second are used for the purpose of distinguishing one component from another component without limiting meaning. In the following examples, expressions in the singular number include plural expressions unless the context clearly dictates otherwise. In the following embodiments, terms such as include or have mean that features or components described in the specification exist, and do not preclude the possibility that one or more other features or components may be added. In the drawings, the size of components may be exaggerated or reduced for convenience of description. In the following embodiments, when components, parts, units, modules, etc. are connected, not only when components, parts, units, and modules are directly connected, but also other components in the middle of the components, parts, units, and modules. , It also includes cases where parts, units, and modules are interposed and indirectly connected.

1 schematically shows the configuration of a system including an active current compensation device 100 according to an embodiment of the present invention. The active current compensation device 100 includes first currents I11 and I12 (e.g., EMI noise current) can be actively compensated.

Referring to FIG. 1 , the active current compensation device 100 may include a sensing unit 120, an amplification unit 130, a malfunction detection unit 180, and a compensation unit 160.

In this specification, the first device 300 may be various types of power systems using power supplied by the second device 200 . For example, the first device 300 may be a load driven using power supplied by the second device 200 . Also, the first device 300 may be a load (eg, an electric vehicle) that stores energy using power supplied by the second device 200 and is driven using the stored energy. However, it is not limited thereto.

In this specification, the second device 200 may be various types of systems for supplying power to the first device 300 in the form of current and/or voltage. For example, the second device 200 may be a device that generates and supplies power or may be a device that supplies power generated by another device (eg, an electric vehicle charging device). Of course, the second device 200 may also be a device that supplies stored energy. However, it is not limited thereto.

A power conversion device may be located on the side of the first device 300 . For example, the first currents I11 and I12 may be input to the current compensating device 100 by a switching operation of the power conversion device. That is, the side of the first device 300 may correspond to a noise source, and the side of the second device 200 may correspond to a noise receiver.

The two or more high current paths 111 and 112 may be paths for transferring the power supplied by the second device 200, that is, the second currents I21 and I22 to the first device 300, for example, they may be power lines. there is. For example, each of the two or more high current paths 111 and 112 may be a live line and a neutral line. At least some of the high current paths 111 and 112 may pass through the current compensating device 100 . The second currents I21 and I22 may be alternating currents having a frequency of the second frequency band. The second frequency band may be, for example, a 50Hz to 60Hz band.

In addition, the two or more high current paths 111 and 112 may be paths through which noise generated in the first device 300, that is, the first currents I11 and I12 are transferred to the second device 200. The first currents I11 and I12 may be input in a common mode to each of the two or more high current paths 111 and 112 . The first currents I11 and I12 may be currents unintentionally generated in the first device 300 for various reasons. For example, the first currents I11 and I12 may be noise currents generated by virtual capacitance between the first device 300 and the surrounding environment. Alternatively, the first currents I11 and I12 may be noise currents generated by a switching operation of the power conversion device of the first device 300 . The first currents I11 and I12 may be currents having a frequency of the first frequency band. The first frequency band may be a higher frequency band than the aforementioned second frequency band. The first frequency band may be, for example, a 150 KHz to 30 MHz band.

Meanwhile, the two or more high current paths 111 and 112 may include two paths as shown in FIG. 1, three paths as shown in FIG. 9, or four paths. may be The number of high current paths 111 and 112 may vary depending on the type and/or form of power used by the first device 300 and/or the second device 200 .

The sensing unit 120 may sense the first currents I11 and I12 on the two or more high current paths 111 and 112 and generate output signals corresponding to the first currents I11 and I12. That is, the sensing unit 120 may mean a means for sensing the first currents I11 and I12 on the high current paths 111 and 112 . Although at least a part of the high current paths 111 and 112 may pass through the sensing unit 120 to sense the first currents I11 and I12, an output signal by sensing within the sensing unit 120 is generated. Part may be insulated from the high current path (111, 112). For example, the sensing unit 120 may be implemented as a sensing transformer. The sensing transformer may sense the first currents I11 and I12 on the high current paths 111 and 112 while being insulated from the high current paths 111 and 112 .

According to an embodiment, the sensing unit 120 may be differentially connected to an input terminal of the amplifying unit 130 .

The amplifier 130 may be electrically connected to the sensing unit 120 to amplify an output signal output by the sensing unit 120 and generate an amplified output signal. In the present invention, 'amplification' by the amplifier 130 may mean adjusting the size and/or phase of an amplification target. The amplifier 130 may be implemented by various means and may include an active element. In one embodiment, the amplifier 130 may include a bipolar junction transistor (BJT). For example, the amplifier 130 may include a plurality of passive elements such as resistors and capacitors in addition to the BJT. However, it is not limited thereto, and the means for 'amplification' described in the present invention may be used without limitation as the amplifier 130 of the present invention. The second reference potential 602 of the amplifier 130 and the first reference potential 601 of the current compensation device 100 may be distinguished from each other.

The malfunction detection unit 180 may detect a malfunction or failure of the amplifier 130 . According to an embodiment, signals from two nodes included in the amplification unit 130 may be differentially input to the malfunction detection unit 180 . The malfunction detection unit 180 may detect a differential signal between the two nodes included in the amplification unit 130 . The malfunction detection unit 180 may detect malfunction of the amplification unit 130 using the input differential signal. For example, the malfunction detection unit 180 may detect malfunction of the amplifier 130 by determining whether the differential signal satisfies a predetermined condition. The malfunction detection unit 180 may output a signal indicating whether the amplification unit 130 is out of order. According to one embodiment, the malfunction detection unit 180 may include an active element.

At least a portion of the amplification unit 130 and the malfunction detection unit 180 may be physically internalized in one integrated circuit (IC) chip 500 .

2 shows the inclusion relationship of the amplification unit 130, the malfunction detection unit 180, and the IC chip 500 according to an embodiment of the present invention.

Referring to FIG. 2 , the amplifier 130 may include a passive element unit 131 and an active element unit 132 . The passive element unit 131 is composed of only passive elements, and the active element unit 132 includes active elements. In one embodiment, the active element unit 132 may further include a passive element as well as an active element. Examples of detailed configurations of the amplifier 130 including the passive element unit 131 and the active element unit 132 will be described later with reference to FIGS. 4 to 5 .

Referring to FIGS. 1 and 2 together, the combination of the passive element unit 131 and the active element unit 132 may perform a function of generating an amplified signal from an output signal output from the sensing unit 120. . The amplified signal may be input to the compensator 160 .

As described above, signals from two nodes included in the amplification unit 130 may be differentially input to the malfunction detection unit 180 . The malfunction detection unit 180 may detect a differential signal between the two nodes. The two nodes may be two nodes included in the active element unit 132. In one embodiment, the two nodes may also be connected to the passive element unit 131.

In one embodiment, the active element unit 132 and the malfunction detection unit 180 of the amplification unit 130 may be physically integrated into one IC chip 500 . However, this is only one embodiment, and in another embodiment, the passive element unit 131, the active element unit 132, and the malfunction detection unit 80 of the amplifier 130 are physically integrated into one IC chip 500. Of course, it can also be integrated.

The malfunction detection unit 180 may include an active element. Here, the reference potential of the malfunction detection unit 180 may be the same as the second reference potential 602 that is the reference potential of the amplifier 130 . The reference potential of the malfunction detection unit 180 may be different from the first reference potential 601 that is the reference potential of the current compensating device 100 (eg, the reference potential of the compensation unit 160).

The amplifier 130 and the malfunction detection unit 180 may receive power from a power supply 400 that is distinct from the first device 300 and/or the second device 200 . The amplifier 130 may generate an amplified current by receiving power from the power supply 400 and amplifying an output signal output by the sensing unit 120 . The malfunction detection unit 180 may receive power from the power supply 600 and generate an output signal indicating whether the differential input signal from the amplification unit 130 is within a predetermined range. The output signal may indicate whether the amplifier 130 is out of order.

The power supply 400 may be a device that generates input power for the amplification unit 130 and the malfunction detection unit 180 by receiving power from a power source independent of the first device 300 and the second device 200. . Optionally, the power supply 400 receives power from any one of the first device 300 and the second device 200 and generates input power for the amplification unit 130 and the malfunction detection unit 180. It could be.

The IC chip 500 includes a terminal t1 to be connected to the power supply 400, a terminal t2 to be connected to the second reference potential 602, and to output an output signal of the malfunction detection unit 180. A terminal t3 may be included. The IC chip 500 may further include other terminals.

For example, in an embodiment in which only the active element unit 132, excluding the passive element unit 131, of the amplification unit 130 is integrated into the IC chip 500 together with the malfunction detection unit 180, the other terminal is passive. It may be connected to the element unit 131 .

For another example, in an embodiment in which the passive element unit 131, the active element unit 132, and the malfunction detection unit 180 included in the amplifier 130 are all integrated on one IC chip 500, The other terminal may be connected to an output terminal of the sensing unit 120 and an input terminal of the compensating unit 160 .

The compensation unit 160 may generate a compensation current based on the output signal amplified by the amplification unit 130 . The output side of the compensation unit 160 may be connected to the high current paths 111 and 112 in order to flow the compensation currents IC1 and IC2 to the high current paths 111 and 112, but may be insulated from the amplification unit 130. For example, the compensation unit 160 may include a compensation transformer for the insulation. For example, an output signal of the amplifier 130 may flow to the primary side of the compensation transformer, and a compensation current based on the output signal may be generated to the secondary side of the compensation transformer.

The compensation unit 160 injects the compensation currents IC1 and IC2 into the high current paths 111 and 112 through the two or more high current paths 111 and 112, respectively, in order to cancel the first currents I11 and I12. ) can be made. The compensation currents IC1 and IC2 may have the same magnitude and opposite phases to the first currents I11 and I12.

FIG. 3 shows a more specific example of the embodiment shown in FIG. 1, and schematically illustrates an active current compensation device 100A according to an embodiment of the present invention. The active current compensation device 100A actively applies first currents I11 and I12 (eg, noise current) input in a common mode to each of the two large current paths 111 and 112 connected to the first device 300. can compensate

Referring to FIG. 3 , the active current compensation device 100A may include a sensing transformer 120A, an amplification unit 130, a malfunction detection unit 180, and a compensation unit 160A.

In one embodiment, the aforementioned sensing unit 120 may include a sensing transformer 120A. In this case, the sensing transformer 120A may be a means for sensing the first currents I11 and I12 on the high current paths 111 and 112 while being insulated from the high current paths 111 and 112 . The sensing transformer 120A may sense first currents I11 and I12 that are noise currents input from the side of the first device 300 to the high current paths 111 and 112 (eg, power lines).

The sensing transformer 120A may include a primary side 121A disposed on the high current paths 111 and 112 and a secondary side 122A differentially connected to the input terminal of the amplifier 130. there is. The sensing transformer 120A generates 2 values based on the magnetic flux density induced by the first currents I11 and I12 in the primary side 121A (eg, the primary winding) disposed on the high current paths 111 and 112. An induced current may be generated on the secondary side 122A (eg, the secondary winding). The primary side 121A of the sensing transformer 120A may be, for example, a winding in which the first high current path 111 and the second high current path 112 are wound around one core. However, the present invention is not limited thereto, and the primary side 121A of the sensing transformer 120A may have a first high current path 111 and a second high current path 112 passing through the core.

Specifically, the magnetic flux density induced by the first current I11 on the first high current path 111 (eg live line) and the first current I12 on the second high current path 112 (eg neutral line) The magnetic flux densities induced by may be configured to overlap (or reinforce) each other. At this time, the second currents I21 and I22 also flow on the high current paths 111 and 112, and the magnetic flux density induced by the second current I21 on the first high current path 111 and the second high current path 112 ) may be configured such that magnetic flux densities induced by the first current I22 cancel each other. In addition, for example, the sensing transformer 120A has a magnetic flux density induced by the first currents I11 and I12 of the first frequency band (eg, a band having a range of 150 KHz to 30 MHz) at the second frequency band. It may be configured to be greater than the magnitude of the magnetic flux density induced by the second currents I21 and I22 of the band (eg, a band having a range of 50 Hz to 60 Hz).

As such, the sensing transformer 120A is configured such that magnetic flux densities induced by the second currents I21 and I22 cancel each other, so that only the first currents I11 and I12 are sensed. That is, the current induced in the secondary side 122A of the sensing transformer 120A may be a current obtained by converting the first currents I11 and I12 at a constant ratio.

For example, in the sensing transformer 120A, the winding ratio of the primary side 121A and the secondary side 122A is 1:N _sen , and the self inductance of the primary side 121A of the sensing transformer 120A is L If _sen is used, the secondary side 122A may have a self inductance of N _sen ² ·L _sen . At this time, the current induced in the secondary side 122A is 1/N _sen times the first currents I11 and I12. For example, the primary side 121A and the secondary side 122A of the sensing transformer 120A may be coupled with a coupling coefficient of k _sen .

The secondary side 122A of the sensing transformer 120A may be connected to an input terminal of the amplifier 130 . For example, the secondary side 122A of the sensing transformer 120A may be differentially connected to an input terminal of the amplifier 130 to supply an induced current to the amplifier 130 .

The amplifier 130 may amplify a current sensed by the sensing transformer 120A and induced in the secondary side 122A. For example, the amplifier 130 may amplify the magnitude of the induced current at a predetermined rate and/or adjust the phase.

The malfunction detection unit 180 may detect a malfunction or failure of the amplifier 130 . According to an embodiment, a differential signal between two nodes included in the amplification unit 130 may be input to the malfunction detection unit 180 . The malfunction detection unit 180 may detect whether the amplification unit 130 is out of order by detecting whether the input differential signal is within a predetermined range. The malfunction detection unit 180 may output a signal indicating whether the amplification unit 130 is out of order through the output terminal t3. The malfunction detection unit 180 may include an active element.

According to various embodiments of the present invention, at least a portion of the amplifier 130 and the malfunction detection unit 180 may be physically integrated into one IC chip 500.

The amplification unit 130 and the malfunction detection unit 180 may be connected to the second reference potential 602, and the second reference potential 602 is the first of the current compensating device 100 (or the compensating unit 160A). It can be distinguished from the reference potential 601. The amplifier 130 and the malfunction detection unit 180 may be connected to the power supply 400 .

The IC chip 500 includes a terminal t1 to be connected to the power supply 400, a terminal t2 to be connected to the second reference potential 602, and to output an output signal of the malfunction detection unit 180. A terminal t3 may be included.

According to an embodiment, only the active element unit 132 excluding the passive element unit 131 among the amplification unit 130 may be integrated into the IC chip 500 together with the malfunction detection unit 180 . In this case, the IC chip 500 may further include a terminal to be connected to the passive element unit 131 .

According to another embodiment, both the passive element unit 131 and the active element unit 132 included in the amplifier 130 may be integrated into the IC chip 500 together with the malfunction detection unit 180 . In this case, the IC chip 500 may further include a terminal connected to the output terminal of the sensing unit 120 and a terminal connected to the input terminal of the compensation unit 160 .

The compensating unit 160A may be an example of the compensating unit 160 described above. The compensation unit 160A may include a compensation transformer 140A and a compensation capacitor unit 150A. The amplified current amplified by the amplification unit 130 described above flows to the primary side 141A of the compensation transformer 140A.

The compensation transformer 140A may be a means for insulating the amplifier 130 including the active element from the high current paths 111 and 112 . That is, the compensation transformer 140A generates a compensation current (to the secondary side 142A) for injection into the high current paths 111 and 112 based on the amplified current in a state insulated from the high current paths 111 and 112. may be a means for

The compensation transformer 140A may include a primary side 141A differentially connected to the output terminal of the amplifier 130 and a secondary side 142A connected to the high current paths 111 and 112. there is. Compensation transformer 140A induces a compensating current in secondary side 142A (eg, secondary winding) based on the magnetic flux density induced by the amplified current flowing through primary side 141A (eg, primary winding). can do.

In this case, the secondary side 142A may be disposed on a path connecting the compensation capacitor unit 150A and the first reference potential 601 of the current compensating device 100A. That is, one end of the secondary side 142A is connected to the high current paths 111 and 112 through the compensation capacitor unit 150A, and the other end of the secondary side 142A is connected to the active current compensation device 100A. 1 can be connected to the reference potential 601. Meanwhile, the primary side 141A of the compensation transformer 140A, the amplification unit 130, the malfunction detection unit 180, and the secondary side 122A of the sensing transformer 120A are of the active current compensation device 100A. It can be connected to the second reference potential 602 that is distinguished from the rest of the components. The first reference potential 601 of the current compensation device 100A and the second reference potential 602 of the amplifier 130 may be distinguished.

As described above, in one embodiment, the present invention uses a reference potential (ie, the second reference potential 602) different from the rest of the components for the component generating the compensation current and uses a separate power supply 400. A component that generates a compensating current may be operated in an isolated state, thereby improving reliability of the active current compensating device 100A.

In the compensation transformer 140A, if the winding ratio of the primary side 141A and the secondary side 142A is 1:N _inj and the self inductance of the primary side 141A of the compensation transformer 140A is L _inj , The secondary side 142A may have a self inductance of N _inj ² ·L _inj . At this time, the current induced in the secondary side 142A is 1/N _inj times the current flowing in the primary side 141A (ie, the amplified current). The primary side 141A and the secondary side 142A of the compensation transformer 140A may be coupled with a coupling coefficient of k _inj .

The current converted through the compensation transformer 140A may be injected as compensation currents IC1 and IC2 into the high current paths 111 and 112 (eg, power lines) through the compensation capacitor unit 150A. Accordingly, the compensating currents IC1 and IC2 may have the same magnitude as the first currents I11 and I12 and may have opposite phases in order to cancel the first currents I11 and I12. Therefore, the size of the current gain of the amplifier 130 can be designed to be N _sen N _inj .

As described above, the compensation capacitor unit 150A may provide a path through which the current generated by the compensation transformer 140A flows to each of the two large current paths 111 and 112 .

The compensation capacitor unit 150A includes two Y-capacitors having one end connected to the secondary side 142A of the compensation transformer 140A and the other end connected to the high current paths 111 and 112. Y-cap) may be included. One end of each of the two Y-caps shares a node connected to the secondary side 142A of the compensation transformer 140A, and the opposite ends of each of the two Y-caps form the first high current path 111 and the second side 142A, respectively. 2 may have a node connected to the high current path 112 .

The compensation capacitor unit 150A may flow the compensation currents IC1 and IC2 induced by the compensation transformer 140A to the power line. As the compensating currents IC1 and IC2 compensate (or cancel) the first currents I11 and I12, the current compensating device 100A can reduce noise.

Meanwhile, the compensation capacitor unit 150A may be configured such that the current IL1 flowing between the two high current paths 111 and 112 through the compensation capacitor is less than the first threshold level. In addition, the compensation capacitor unit 150A may be configured such that the current IL2 flowing between each of the two high current paths 111 and 112 and the first reference potential 601 through the compensation capacitor is less than the second threshold level.

The active current compensation device 100A may realize an isolated structure by using a compensation transformer 140A and a sensing transformer 120A.

FIG. 4 shows a more specific example of the embodiment shown in FIG. 3 and schematically illustrates an active current compensation device 100A-1 according to an embodiment of the present invention. The active current compensator 100A-1 shown in FIG. 4 is an example of the active current compensator 100A shown in FIG. 3 . The amplifier 130A-1 included in the active current compensator 100A-1 is an example of the amplification unit 130 of the active current compensator 100A.

The amplifier 130A-1 included in the active current compensator 100A-1 according to an embodiment may include a passive element part and an active element part. The passive element unit of the amplifier 130A-1 may include C _b , C _e , Z ₁ , Z ₂ , and C _dc . The active element unit of the amplifier 130A-1 may include the first transistor 11, the second transistor 12, the diode 13, R _npn , R _pnp , and R _e .

In one embodiment, the first transistor 11 may be a npn BJT, and the second transistor 12 may be a pnp BJT. For example, the amplifier 130A-1 may have a push-pull amplifier structure including an npn BJT and a pnp BJT.

The induced current induced in the secondary side 122A by the sensing transformer 120A may be differentially input to the amplifier 130A-1. C _b and C _e included in the amplifier 130A-1 may selectively couple only AC signals.

The power supply 400 supplies a direct current (DC) voltage V _dd based on the second reference potential 602 to drive the amplifier 130A-1 and the malfunction detection unit 180. C _dc is a DC decoupling capacitor for V _dd , and may be connected in parallel between the power supply 400 and the second reference potential 602 . C _dc may selectively couple an AC signal between both collectors of the first transistor 11 (eg, npn BJT) and the second transistor 12 (eg, pnp BJT).

In the active element unit of the amplifier 130A-1, R _npn , R _pnp , and R _e may adjust operating points of the first and second transistors 11 and 12 . R _npn connects the collector terminal of the first transistor 11 (eg, npn BJT) and the terminal of the power supply 400 to the base terminal of the first transistor 11 (eg, npn BJT). can R _pnp is a collector terminal of the second transistor 12 (eg, pnp BJT) and may connect the second reference potential 602 and the base terminal of the second transistor 12 (eg, pnp BJT). there is. R _e may connect an emitter terminal of the first transistor 11 and an emitter terminal of the second transistor 12 .

The secondary side 122A side of the sensing transformer 120A according to an embodiment may be connected between the base side and the emitter side of the first and second transistors 11 and 12 . The primary side 141A of the compensation transformer 140A according to an embodiment may be connected between the collector side and the base side of the first and second transistors 11 and 12 . Here, the connection also includes the case of indirect connection. The amplification unit 130A-1 according to an embodiment may have a regression structure for injecting the output current into the bases of the first and second transistors 11 and 12 again. Due to the regression structure, the amplifier 130A-1 can stably obtain a constant current gain for the operation of the active current compensation device 100A-1.

When the input voltage of the amplifier 130A-1 due to the noise signal has a positive swing greater than 0, the first transistor 11 (eg, npn BJT) may operate. At this time, the operating current may flow through a first path passing through the first transistor 11 . When the input voltage of the amplifier 130A-1 due to noise has a negative swing smaller than 0, the second transistor 12 (eg, pnp BJT) may operate. At this time, the operating current may flow through the second path passing through the second transistor 12 .

In various embodiments, since the noise level to be compensated for according to the first device 300 may be high, it may be desirable to use a power supply device 400 having a voltage as high as possible. For example, the power supply 400 may be independent of the first device 300 and the second device 200 .

As power is supplied from the power supply 400 , nodes of the first transistor 11 and the second transistor 12 may swing greatly in the common mode. For example, voltages at base nodes and emitter nodes of the first and second transistors 11 and 12 may swing in a common mode.

By checking whether the active element unit of the amplifier 130A-1 normally operates as described above, it is possible to check whether the active current compensator 100A-1 itself normally operates. In other words, by checking whether the DC bias of the amplifier 130A-1 is normal, it is possible to check whether the active current compensation device 100A-1 is normally operating.

As described above, since the voltage at the nodes of the first and second transistors 11 and 12 swings greatly in the common mode, only the differential DC voltage between the first and second transistors 11 and 12 is sensed. Thus, malfunctions can be sensed. That is, in order to sense a malfunction of the amplifier 130A-1, only the differential DC voltage between the first transistor 11 and the second transistor 12 may be selectively sensed.

For example, if the differential DC voltage between one node of the first transistor 11 and one node of the second transistor 12 satisfies a predetermined condition, it is determined that the active current compensation device 100A-1 is normal. can

Accordingly, the malfunction detection unit 180 according to an embodiment may output a signal indicating a malfunction of the amplification unit 130A-1 using a differential DC voltage between two nodes included in the amplification unit 130A-1. there is.

For example, a differential signal between one node of the first transistor 11 and one node of the second transistor 12 may be input to the malfunction detection unit 180 . In one embodiment, the differential signal may be a differential DC voltage between an emitter of the first transistor 11 and an emitter of the second transistor 12 .

According to an embodiment, the malfunction detection unit 180 outputs the output terminal t3 when the differential DC voltage between the emitter of the first transistor 11 and the emitter of the second transistor 12 is within a predetermined range. A signal indicating normality can be output. The malfunction detection unit 180 may output a signal indicating a failure through an output terminal t3 when the differential DC voltage is out of the predetermined range.

In embodiments of the present invention, at least a part of the amplifier 130A-1 and the malfunction detection unit 180 may be physically integrated into one IC chip 500A-1.

In one embodiment, as shown in FIG. 4 , the active element unit of the amplification unit 130A-1 and the malfunction detection unit 180 may be integrated into one IC chip 500A-1. For example, the first transistor 11, the second transistor 12, the diode 13, R _npn , R _pnp , R _e of the active element unit and the malfunction detection unit 180 are integrated into one IC chip 500A-1. ) can be integrated. In this case, the IC chip 500A-1 includes a terminal t1 to be connected to the power supply 400, a terminal t2 to be connected to the second reference potential 602, and an output signal of the malfunction detection unit 180. It may include a terminal t3 for outputting, and terminals (eg, t4, t5, t6, t7) for connecting to the passive element unit. For example, the terminals to be connected to the passive element unit may include a terminal t4 corresponding to the emitter of the first transistor 11 and a terminal t5 corresponding to the emitter of the second transistor 12. there is. In the embodiment shown in FIG. 4 , the two terminals t4 and t5 corresponding to the emitter may also correspond to the differential input of the malfunction detection unit 180 . Terminals t4 and t5 corresponding to the emitter may be connected to C _e of the passive element unit, respectively. Also, terminals to be connected to the passive element unit may include a terminal t6 corresponding to the base of the first transistor 11 and a terminal t7 corresponding to the base of the second transistor 12 . Terminals t6 and t7 corresponding to the base may be connected to C _b of the passive element unit, respectively.

However, the present invention is not limited thereto. In another embodiment, the IC chip 500A-1 may further include at least a portion of the passive element part of the amplifier 130A-1. In another embodiment, the IC chip 500A-1 may include both the active and passive components of the amplifier 130A-1 and the malfunction detection unit 180.

According to the embodiments of the present invention, the malfunction detection unit 180 is internalized in the IC chip 500A-1 in which the active element of the amplification unit 130A-1 is integrated, so that the malfunction detection unit ( 180) can be reduced in size and price compared to the case of separately configuring. In addition, by integrating at least a part of the amplification unit 130A-1 and the malfunction detection unit 180 into one IC chip 500A-1, the IC chip 500A-1 or the current compensating device 100A-1 is independent. As a part, it can be commercialized with versatility.

A detailed description of the malfunction detection unit 180 will be described later with reference to FIGS. 6 to 8 .

FIG. 5 shows another more specific example of the embodiment shown in FIG. 3, and schematically illustrates an active current compensation device 100A-2 according to an embodiment of the present invention. The active current compensator 100A-2 shown in FIG. 5 is an example of the active current compensator 100A shown in FIG. 3 . The amplifier 130A-2 included in the active current compensator 100A-2 is an example of the amplification unit 130 of the active current compensator 100A.

The amplifier 130A-2 shown in FIG. 5 corresponds to the amplifier 130A-1 shown in FIG. 4, and only the location where the malfunction detection unit 180 is connected may be different. Specifically, in the IC chip 500A-2, the differential DC voltage between the base of the first transistor 11 and the base of the second transistor 12 may be input to the malfunction detection unit 180. Accordingly, the description of the amplifier 130A-2 corresponds to the description of the amplifier 130A-1 and will therefore be briefly described.

In one embodiment, the passive element unit of the amplifier 130A-2 may include C _b , C _e , Z ₁ , Z ₂ , and C _dc . The active element unit of the amplifier 130A-2 may include the first transistor 11, the second transistor 12, the diode 13, R _npn , R _pnp , and R _e . In one embodiment, the first transistor 11 may be a npn BJT, and the second transistor 12 may be a pnp BJT. For example, the amplifier 130A-2 may have a push-pull amplifier structure including an npn BJT and a pnp BJT. The amplification unit 130A-2 according to an embodiment may have a return structure for injecting the output current into the bases of the first and second transistors 11 and 12 again.

When the input voltage of the amplifier 130A-2 due to the noise signal has a positive swing greater than 0, the first transistor 11 (eg, npn BJT) may operate. When the input voltage of the amplifier 130A-2 due to noise has a negative swing smaller than 0, the second transistor 12 (eg, pnp BJT) may operate.

As power is supplied from the power supply device 400 , voltages at the base nodes and emitter nodes of the first and second transistors 11 and 12 may greatly swing in the common mode. Here, by checking whether the DC bias of the amplifier 130A-2 is normal, it is possible to check whether the active current compensation device 100A-2 operates normally.

As described above, since the voltage at the base nodes and the emitter nodes of the first and second transistors 11 and 12 swing greatly in the common mode, one node of the first transistor 11 and the second transistor ( 12), the malfunction can be sensed by sensing only the differential DC voltage between one node.

According to the embodiment shown in FIG. 5 , the differential DC voltage between the base of the first transistor 11 and the base of the second transistor 12 may be input to the malfunction detection unit 180 . When the differential DC voltage between the base of the first transistor 11 and the base of the second transistor 12 is within a predetermined range, the malfunction detection unit 180 may output a signal indicating normal through the output terminal t3. . The malfunction detection unit 180 outputs a signal indicating a failure through the output terminal t3 when the differential DC voltage between the base of the first transistor 11 and the base of the second transistor 12 is out of the predetermined range. can

In embodiments of the present invention, at least a part of the amplifier 130A-2 and the malfunction detection unit 180 may be physically integrated into one IC chip 500A-2.

In one embodiment, as shown in FIG. 5 , the active element unit of the amplification unit 130A-2 and the malfunction detection unit 180 may be integrated into one IC chip 500A-2. For example, the first transistor 11, the second transistor 12, the diode 13, R _npn , R _pnp , R _e of the active element unit and the malfunction detection unit 180 are integrated into one IC chip 500A-2 ) can be integrated. In this case, the IC chip 500A-2 includes a terminal t1 to be connected to the power supply 400, a terminal t2 to be connected to the second reference potential 602, and an output signal of the malfunction detection unit 180. It may include a terminal t3 for outputting, and terminals (eg, t4, t5, t6, t7) for connecting to the passive element unit. For example, the terminals to be connected to the passive element unit may include a terminal t4 corresponding to the emitter of the first transistor 11 and a terminal t5 corresponding to the emitter of the second transistor 12. there is. Terminals t4 and t5 corresponding to the emitter may be connected to C _e of the passive element unit, respectively. Also, terminals to be connected to the passive element unit may include a terminal t6 corresponding to the base of the first transistor 11 and a terminal t7 corresponding to the base of the second transistor 12 . In the embodiment shown in FIG. 5 , the two terminals t6 and t7 corresponding to the base may also correspond to the differential input of the malfunction detection unit 180 . Terminals t6 and t7 corresponding to the base may be connected to C _b of the passive element unit, respectively.

However, the present invention is not limited thereto. In another embodiment, the IC chip 500A-2 may further include at least a portion of the passive component of the amplifier 130A-2. In another embodiment, the IC chip 500A-2 may include both the active and passive components of the amplifier 130A-2 and the malfunction detection unit 180.

A detailed description of the malfunction detection unit 180 will be described later with reference to FIGS. 6 to 8 .

Hereinafter, description through the amplification unit 130 may be applied to the amplification units 130A-1 and 130A-2.

6 shows a functional configuration of the malfunction detection unit 180 according to an embodiment of the present invention.

Referring to FIG. 6 , the malfunction detection unit 180 includes a subtractor 181, a first comparator 182a, a second comparator 182b, a first level shifter 183a, and a second level A shifter 183b and a logic circuit 184 may be included. However, this is only one embodiment, and the malfunction detection unit 180 of the present invention is not limited thereto.

The malfunction detection unit 180 may be applied to the IC chips 500, 500A-1, and 500A-2 according to various embodiments described above.

In various embodiments, signals of two nodes included in the amplifiers 130, 130A-1, and 130A-2 may be differentially input to the subtractor 181 of the malfunction detection unit 180. As described above, the signal of one node of the first transistor 11 and the signal of one node of the second transistor 12 may be differentially input to the subtractor 181 .

The subtractor 181 can selectively sense only the differential DC voltage between the node of the first transistor 11 and the node of the second transistor 12 . Since the subtractor 181 differentially senses the voltages at the two nodes, the common mode swing of the two nodes can be ignored. The subtractor 181 may output the sensed differential DC voltage (V _sub ).

In the case of the IC chip 500A-1 shown in FIG. 4 in one embodiment, the subtractor 181 provides a differential DC voltage (V) between the emitter of the first transistor 11 and the emitter of the second transistor 12. _sub ) can be output. In this case, the input terminal of the subtractor 181 may share a node with the emitters of the first and second transistors 11 and 12 .

In the case of the IC chip 500A-2 shown in FIG. 5 in another embodiment, the subtractor 181 provides a differential DC voltage between the base of the first transistor 11 and the base of the second transistor 12 (V _sub ) can be output. In this case, the input terminal of the subtractor 181 may share the base and node of the first and second transistors 11 and 12 .

Meanwhile, the voltage at each input terminal of the subtractor 181 may swing, and the swing may correspond to the magnitude of the rated voltage (V _dd ) of the amplifier 130. Accordingly, the subtractor 181 may have a rated voltage corresponding to the rated voltage (V _dd ) of the amplifier 130 . Therefore, the subtractor 181 can be driven by receiving the supply voltage V _dd of the power supply 400 as it is.

Since the malfunction detection unit 180 should not affect the operation of the amplifier 130, the subtractor 181 of the malfunction detection unit 180 may have a high input impedance. For example, the subtractor 181 may be configured as a circuit having an input impedance greater than 10 kOhm.

According to one embodiment, the subtractor 181 may include a rail-to-rail operational amplifier (rail-to-rail op-amp).

The first and second comparators 182a and 182b may detect whether the magnitude of the differential DC voltage (V _sub ) output from the subtractor 181 is within a predetermined range. If the magnitude of the differential DC voltage (V _sub ) is within the predetermined range _, the amplification unit 130 may be determined to be normal. can be determined For example, when the differential DC voltage (V _sub ) is between the maximum reference voltage (V _ref,max ) and the minimum reference voltage (V _ref,min ), the amplifier 130 may be normal. If the differential DC voltage (V _sub ) is higher than the maximum reference voltage (V _ref,max ) or lower than the minimum reference voltage (V _ref,min ), the amplifier 130 may fail.

The maximum reference voltage (V _ref,max ) and minimum reference voltage (V _ref,min ) may be preset according to various embodiments. Hereinafter, criteria for setting the maximum reference voltage (V _ref,max ) and minimum reference voltage (V _ref,min ) will be described.

In an embodiment as shown in FIG. 4 , the subtractor 181 may detect a differential DC voltage (V _sub ) between the emitter of the first transistor 11 and the emitter of the second transistor 12 . When the amplifier 130 operates normally, the differential DC voltage (V _sub ) may correspond to I _e *R _e . R _e is a resistance connecting the emitter terminal of the first transistor 11 and the emitter terminal of the second transistor 12, and I _e represents the current flowing through _Re . I _e and R _e may be determined according to the design. In this embodiment, the maximum reference voltage (V _ref,max ) may be set higher than I _e *R _e by a specified size. The minimum reference voltage (V _ref,min ) can be set lower than I _e *R _e by a specified size.

In an embodiment as shown in FIG. 5 , the subtractor 181 may detect a differential DC voltage (V _sub ) between the base of the first transistor 11 and the base of the second transistor 12 . When the amplifier 130 operates normally, the differential DC voltage (V _sub ) may correspond to (I _e *R _e + 2V _be,bjt ). R _e is a resistance connecting the emitter terminal of the first transistor 11 and the emitter terminal of the second transistor 12, and I _e represents the current flowing through _Re . I _e and R _e may be determined according to the design. V _be,bjt represents the voltage between the base and the emitter of the first transistor 11 or the second transistor 12 . In this embodiment, the maximum reference voltage (V _ref,max ) may be set higher than (I _e *R _e + 2V _be,bjt ) by a specified size. The minimum reference voltage (V _ref,min ) may be set lower than (I _e *R _e + 2V _be,bjt ) by a specified size. For example, the maximum reference voltage (V _ref,max ) may be set to 2 V, and the minimum reference voltage (V _ref,min ) may be set to 1.4 V. However, it is not limited thereto.

1 The comparator 182a may output a first signal a1 indicating whether the differential DC voltage V _sub is lower than the maximum reference voltage V _ref,max . The second comparator 182b may output a second signal b1 indicating whether the differential DC voltage V _sub is higher than the minimum reference voltage V _ref,min .

Meanwhile, since a high voltage may still be generated at the input terminals of the first and second comparators 182a and 182b, the first and second comparators 182a and 182b generate a voltage corresponding to the rated voltage (V _dd ) of the amplifier 130. may have a rated voltage. Accordingly, the first and second comparators 182a and 182b may be driven by receiving the supply voltage V _dd of the power supply 400 as it is.

According to an embodiment, the first and second comparators 182a and 182b may include open-loop 2-stage operational amplifiers.

The first and second level shifters 183a and 183b may lower voltages of output signals of the comparators 182a and 182b.

Since the gate voltage of the MOSFET included in the logic circuit 184 is lower than the rated voltage Vdd of the comparators 182a and 182b, the voltage levels of the first and second signals a1 and b1 are lowered to form a logic circuit ( 184) should be entered. Therefore, by using the level shifters 183a and 183b, the signs of the first and second signals a1 and b1 may be maintained while only the voltage magnitude may be reduced.

The first signal a1 output from the first comparator 182a may be input to the first level shifter 183a. The first level shifter 183a may output a third signal a2 in which the voltage level of the first signal a1 is lowered.

The second signal b1 output from the second comparator 182b may be input to the second level shifter 183b. The second level shifter 183b may output a fourth signal b2 in which the voltage level of the second signal b1 is lowered.

The rated voltage of the input terminals of the level shifters 183a and 183b may correspond to the supply voltage V _dd of the power supply 400 . The rated voltage of the output terminals of the level shifters 183a and 183b may be lower than the supply voltage V _dd .

For example, the supply voltage (V _dd ) of the power supply 400 may be 12V, and the rated voltage of the output terminals of the level shifters 183a and 183b may be 5V.

The third signal a2 and the fourth signal b2 may be input to the logic circuit 184 . The logic circuit 184 determines that the differential DC voltage Vsub is between the maximum reference voltage V _ref,max and the minimum reference voltage V _ref,min using the third signal a2 and the fourth signal b2. It is possible to output a fifth signal c1 indicating whether it is in . The fifth signal c1 may be a digital signal of either 0 or 1. For example, when the fifth signal c1 indicates 0, the amplification unit 130 may be in a normal state, and when the fifth signal c1 indicates 1, the amplification unit 130 may be in a failure state. Of course, the opposite is also possible.

7 is a schematic diagram of a logic circuit 184 according to one embodiment of the present invention.

Referring to FIG. 7 , the third signal a2 that is the output of the first level shifter 183a and the fourth signal b2 that is the output of the second level shifter 183b may be input to the logic circuit 184. . The logic circuit may output a fifth signal c1 based on the third signal a2 and the fourth signal b2 as inputs. For example, the logic circuit 184 may have a truth table as shown in Table 1 below.

Inputs Output a2 b2 c1 0 0 One 0 One One One 0 0 One One One

In one embodiment, the first comparator 182a may output a high signal representing 1 when the differential DC voltage (V _sub ) is less than the maximum reference voltage (V _ref,max ). In this case, since the first signal a1 represents 1, the third signal a2 may also represent 1.

In one embodiment, the second comparator 182b may output a low signal indicating 0 when the differential DC voltage (V _sub ) is greater than the minimum reference voltage (V _ref,min ). In this case, since the second signal b1 represents 0, the fourth signal b2 may also represent 0.

According to the above-described embodiment, when the fifth signal c1 in Table 1 indicates 0, it can be determined that the amplification unit 130 operates normally. When the fifth signal c1 indicates 1, it may be determined that the amplifier 130 malfunctions.

However, the logic circuit 184 shown in FIG. 7 and the truth table are only examples, and the present invention is not limited thereto. According to various embodiments, the malfunction detection unit 180 may be designed to output a fifth signal c1 indicating whether the amplifier 130 is malfunctioning.

Referring to FIG. 7 , the LED driver 14 may be connected to the output terminal t3 of the logic circuit 184 . The LED driver 14 may drive the LED 15 outside the IC chip 500 based on the fifth signal c1.

For example, when the fifth signal c1 indicates 1, the LED driver 14 may turn on the external LED 15. The turned-on external LED 15 may indicate a malfunction situation. When the fifth signal c1 indicates 0, the LED driver 14 may turn off the external LED 15. An external LED 15 that is turned off may indicate a normal situation.

The logic circuit 184 may be provided with a small size MOSFET for efficiency. The fifth signal c1, which is an output of the logic circuit 184, may be, for example, 0 V or more and 5 V or less. The LED driver 14 connected to the output terminal (t3) of the logic circuit 184 may be, for example, an NMOS LED driver.

Meanwhile, as described above, the output terminals of the level shifters 183a and 183b and the logic circuit 184 have rated voltages lower than those of the subtracter 181, the comparators 182a and 182b, and the input terminals of the level shifters 183a and 183b. can

Accordingly, V _dd may be supplied to input terminals of the subtractor 181, the comparators 182a and 182b, and the level shifters 183a and 183b. A supply voltage lower than V _dd may be supplied to the output terminals of the level shifters 183a and 183b and the logic circuit 184 . For example, input terminals of the subtractor 181, the comparators 182a and 182b, and the level shifters 183a and 183b may be driven with 12V. The output terminals of the level shifters 183a and 183b and the logic circuit 184 may be driven with 5V. Therefore, referring to FIG. 6, the input terminals of the subtractor 181, the comparators 182a and 182b, and the level shifters 183a and 183b are shown as being included in the high supply voltage region, and the output terminals of the level shifters 183a and 183b and The logic circuit 184 is shown as being included in the low supply voltage region. The high supply voltage region and the low supply voltage region do not represent actual physical regions, but are terms for distinguishing components driven by a high supply voltage and components driven by a low supply voltage.

8 is a circuit diagram of the active element unit 132 and the malfunction detection unit 180 according to an embodiment of the present invention.

Referring to FIG. 8 , the active element unit 132 of the amplification unit 130 may include a first transistor 11, a second transistor 12, a diode 13, R _npn , R _pnp , and R _e . there is.

The malfunction detector 180 may include a subtractor 181, first and second comparators 182a and 182b, first and second level shifters 183a and 183b, and a logic circuit 184. The malfunction detection unit 180 may further include an LED driver 14 at an output terminal of the logic circuit 184 .

Since the malfunction detection unit 180 should not affect the operation of the amplifier 130 including the active element unit 132, the subtractor 181 of the malfunction detection unit 180 may have a high input impedance.

The malfunction detection unit 180 does not need to be operated all the time, but only needs to be operated when inspection of malfunction is required. Accordingly, in order to reduce unnecessary power consumption, a switch 16 may be provided to selectively turn off only the malfunction detection unit 180.

The switch 16 may exist outside the IC chip 500 . The IC chip 500 may further include a separate terminal t8 for selectively supplying power to the malfunction detection unit 180 based on the state of the switch 16 . A switch 16 may be connected between the power supply 400 and the terminal t8.

Meanwhile, the malfunction detection unit 180 may include components driven by a high supply voltage and components driven by a low supply voltage. For example, inputs of the subtractor 181, the comparators 182a and 182b, and the level shifters 183a and 183b may be driven by a high supply voltage V _dd . The output terminals of the level shifters 183a and 183b and the logic circuit 184 may be driven with a voltage lower than the supply voltage V _dd due to the voltage divider circuit 17 .

In one embodiment, the active element unit 132 and the malfunction detection unit 180 may be physically integrated into one IC chip 500 . For example, the IC chip 500 includes a terminal t1 to be connected to the power supply 400, a terminal t2 to be connected to the second reference potential 602, and an output terminal of the malfunction detection unit 180 ( t3), terminals (for example, t4, t5, t6, t7) to be connected to the passive element unit, and a terminal t8 capable of turning on/off the driving of the malfunction detection unit 180.

Meanwhile, although FIG. 8 shows an embodiment in which the emitter nodes of the first and second transistors 11 and 12 are connected to the input terminal of the subtractor 181, according to another embodiment, the first and second transistors 11 and 12 ) may be connected to the input of the subtractor 181.

9 schematically shows the configuration of an active current compensation device 100B according to another embodiment of the present invention. Hereinafter, descriptions of overlapping contents with those described with reference to FIGS. 1 to 8 will be omitted.

Referring to FIG. 9 , the active current compensator 100B actively applies the first currents I11, I12, and I13 input in the common mode to the high current paths 111B, 112B, and 113B connected to the first device 300. can be compensated with

To this end, the active current compensation device 100B according to another embodiment of the present invention includes three high current paths 111B, 112B, and 113B, a sensing transformer 120B, an amplification unit 130B, a malfunction detection unit 180, A compensation transformer 140B and a compensation capacitor unit 150B may be included.

Compared to the active current compensators 100A, 100A-1, and 100A-2 according to the above-described embodiment, the active current compensator 100B according to the embodiment shown in FIG. 9 has three large current paths 111B, 112B and 113B), and accordingly, there is a difference between the sensing transformer 120B and the compensation capacitor unit 150B. Accordingly, the active current compensation device 100B will be described below based on the above-described differences.

The active current compensation device 100B may include a first high current path 111B, a second high current path 112B, and a third high current path 113B that are separated from each other. According to an embodiment, the first high current path 111B may be an R phase, the second high current path 112B may be an S phase, and the third high current path 113B may be a T phase power line. The first currents I11, I12, and I13 may be input in a common mode to each of the first high current path 111B, the second high current path 112B, and the third high current path 113B.

The primary side 121B of the sensing transformer 120B may be disposed in each of the first, second, and third high current paths 111B, 112B, and 113B to generate an induced current in the secondary side 122B. Magnetic flux densities generated in the sensing transformer 120B by the first currents I11, I12, and I13 on the three high current paths 111B, 112B, and 113B may reinforce each other.

Meanwhile, in the active current compensator 100B, the amplification unit 130B may be implemented as one of the amplification units including the amplification unit 130A-1 and the amplification unit 130A-2. 9 illustrates an amplification unit 130B corresponding to the amplification unit 130A-1 as an example.

At least a part of the amplifier 130B and the malfunction detection unit 180 may be physically integrated into one IC chip 500B. For example, as shown in FIG. 9 , the active element unit of the amplification unit 130B and the malfunction detection unit 180 may be integrated into one IC chip 500B. The active element unit may include, for example, a first transistor 11 , a second transistor 12 , a diode 13 , R _npn , R _pnp , and R _e . However, the present invention is not limited thereto, and at least some components of the passive element unit including C _b , C _e , Z ₁ , Z ₂ , and C _dc may also be integrated into the IC chip 500B.

Meanwhile, FIG. 9 illustrates an embodiment in which the voltage of the emitter node of the first transistor 11 and the voltage of the emitter node of the second transistor 12 are differentially input to the malfunction detection unit 180 . However, the present invention is not limited thereto and according to another embodiment, the voltage of the base node of the first transistor 11 and the voltage of the base node of the second transistor 12 may be differentially input to the malfunction detection unit 180. there is. The first transistor 11 may be an npn BJT, and the second transistor 12 may be a pnp BJT.

The IC chip 500B includes a terminal t1 to be connected to the power supply 400, a terminal t2 to be connected to the second reference potential 602, and a terminal to output the output signal of the malfunction detection unit 180. (t3), and terminals (eg, t4, t5, t6, t7) to be connected to the passive element unit. However, the present invention is not limited thereto, and according to another embodiment, as shown in FIG. 8, the IC chip 500B has a terminal t8 connected to the switch 16 for selectively supplying power to the malfunction detection unit 180. ) may be further included. In this case, a switch 16 may be connected between the power supply 400 and the terminal t8.

Although not shown in FIG. 9 , as shown in FIG. 8 , according to an embodiment, the LED driver 14 and the external LED 15 may be connected to the output terminal t3 of the malfunction detection unit 180 . The external LED 15 may indicate a normal or malfunctioning state of the active current compensation device 100B.

Meanwhile, the compensation capacitor unit 150B provides paths through which the compensation currents IC1, IC2, and IC3 generated by the compensation transformer 140B flow to the first, second, and third high current paths 111B, 112B, and 113B, respectively. can do.

The active current compensation device 100B may further include a decoupling capacitor unit 170B on the output side (ie, the second device 200 side). One end of each capacitor included in the decoupling capacitor unit 170B may be connected to the first high current path 111B, the second high current path 112B, and the third high current path 113B, respectively. The opposite end of each capacitor may be connected to the first reference potential 601 of the current compensation device 100B.

The decoupling capacitor unit 170B may prevent the output performance of the compensating current of the active current compensation device 100B from greatly varying according to the change in the impedance value of the second device 200 . The impedance (Z _Y ) of the decoupling capacitor unit 170B may be designed to have a value smaller than a specified value in the first frequency band to be subjected to noise reduction. Due to the coupling of the decoupling capacitor unit 170B, the current compensation device 100B can be used as an independent module in any system (eg, a three-phase, three-wire system).

According to an exemplary embodiment, the decoupling capacitor unit 170B may be omitted in the active current compensator 100B.

The active current compensator 100B according to this embodiment may be used to compensate (or cancel) the first currents I11, I12, and I13 moving from the load to the power supply in the three-phase, three-wire power system.

According to the technical concept of the present invention, the active current compensation device according to various embodiments can be modified to be applied to 3-phase 4-wire as well.

Compared to passive EMI filters, the active current compensation devices 100, 100A, 100A-1, 100A-2, and 100B according to various embodiments show a slight increase in size and heat generation in high-power systems. By integrating the active circuit unit and the malfunction detection unit into one IC chip (500, 500A-1, 500A-2, 500B), the IC chip (500, 500A-1, 500A-2, 500B) is commercialized with versatility as an independent component. It can be. In addition, the current compensating devices 100, 100A, 100A-1, 100A-2, and 100B including the IC chips 500, 500A-1, 500A-2, and 500B may be manufactured and commercialized as independent modules. These current compensating devices 100, 100A, 100A-1, 100A-2, and 100B can detect malfunctions as independent modules regardless of the characteristics of the surrounding electrical system.

Specific implementations described in the present invention are examples and do not limit the scope of the present invention in any way. For brevity of the specification, description of conventional electronic components, control systems, software, and other functional aspects of the systems may be omitted. In addition, the connection of lines or connecting members between the components shown in the drawings are examples of functional connections and / or physical or circuit connections, which can be replaced in actual devices or additional various functional connections, physical connection, or circuit connections.

The spirit of the present invention should not be limited to the above-described embodiments and should not be determined, and all ranges equivalent to or equivalently changed from the claims as well as the claims described below fall within the scope of the spirit of the present invention. will do it

Claims (1)

In the active current compensation device for actively compensating for noise generated in a common mode in each of at least two high current paths,
a sensing unit generating an output signal corresponding to the common mode noise current on the high current path;
an amplification unit generating an amplification current by amplifying the output signal;
a compensating unit generating a compensating current based on the amplified current and allowing the compensating current to flow through each of the at least two large current paths; and
Including; a malfunction detection unit for detecting a malfunction of the amplification unit,
At least a portion of the amplifier and the malfunction detection unit are internalized in one integrated circuit (IC) chip,
Active Current Compensation Device.

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