KR20230019921A - A method for producing a cured product, a resin composition, a developing solution, a method for producing a laminate, and a method for producing a semiconductor device - Google Patents
A method for producing a cured product, a resin composition, a developing solution, a method for producing a laminate, and a method for producing a semiconductor device Download PDFInfo
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- KR20230019921A KR20230019921A KR1020237000017A KR20237000017A KR20230019921A KR 20230019921 A KR20230019921 A KR 20230019921A KR 1020237000017 A KR1020237000017 A KR 1020237000017A KR 20237000017 A KR20237000017 A KR 20237000017A KR 20230019921 A KR20230019921 A KR 20230019921A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 117
- 239000004065 semiconductor Substances 0.000 title description 12
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- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellityc acid Natural products OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 1
- SBMSLRMNBSMKQC-UHFFFAOYSA-N pyrrolidin-1-amine Chemical compound NN1CCCC1 SBMSLRMNBSMKQC-UHFFFAOYSA-N 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 150000003872 salicylic acid derivatives Chemical class 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000003333 secondary alcohols Chemical class 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 150000003342 selenium Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical compound [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 description 1
- XHFLOLLMZOTPSM-UHFFFAOYSA-M sodium;hydrogen carbonate;hydrate Chemical class [OH-].[Na+].OC(O)=O XHFLOLLMZOTPSM-UHFFFAOYSA-M 0.000 description 1
- 229940063673 spermidine Drugs 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 125000005415 substituted alkoxy group Chemical group 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- LPSWFOCTMJQJIS-UHFFFAOYSA-N sulfanium;hydroxide Chemical compound [OH-].[SH3+] LPSWFOCTMJQJIS-UHFFFAOYSA-N 0.000 description 1
- BUUPQKDIAURBJP-UHFFFAOYSA-N sulfinic acid Chemical compound OS=O BUUPQKDIAURBJP-UHFFFAOYSA-N 0.000 description 1
- 125000000565 sulfonamide group Chemical group 0.000 description 1
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 description 1
- 125000001174 sulfone group Chemical group 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 150000003509 tertiary alcohols Chemical class 0.000 description 1
- 150000003511 tertiary amides Chemical class 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- 125000003718 tetrahydrofuranyl group Chemical group 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000004867 thiadiazoles Chemical class 0.000 description 1
- 150000003557 thiazoles Chemical class 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 125000000101 thioether group Chemical group 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- NBOMNTLFRHMDEZ-UHFFFAOYSA-N thiosalicylic acid Chemical compound OC(=O)C1=CC=CC=C1S NBOMNTLFRHMDEZ-UHFFFAOYSA-N 0.000 description 1
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea group Chemical group NC(=S)N UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 1
- 150000003585 thioureas Chemical class 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- 125000005424 tosyloxy group Chemical group S(=O)(=O)(C1=CC=C(C)C=C1)O* 0.000 description 1
- HTSABYAWKQAHBT-UHFFFAOYSA-N trans 3-methylcyclohexanol Natural products CC1CCCC(O)C1 HTSABYAWKQAHBT-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 125000005409 triarylsulfonium group Chemical group 0.000 description 1
- LGQXXHMEBUOXRP-UHFFFAOYSA-N tributyl borate Chemical compound CCCCOB(OCCCC)OCCCC LGQXXHMEBUOXRP-UHFFFAOYSA-N 0.000 description 1
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 description 1
- SWZDQOUHBYYPJD-UHFFFAOYSA-N tridodecylamine Chemical compound CCCCCCCCCCCCN(CCCCCCCCCCCC)CCCCCCCCCCCC SWZDQOUHBYYPJD-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- 125000004953 trihalomethyl group Chemical group 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- KOFQUBYAUWJFIT-UHFFFAOYSA-M triphenylsulfanium;hydroxide Chemical compound [OH-].C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 KOFQUBYAUWJFIT-UHFFFAOYSA-M 0.000 description 1
- MKZVNKSVBFCDLB-UHFFFAOYSA-M tris(2-tert-butylphenyl)sulfanium;hydroxide Chemical compound [OH-].CC(C)(C)C1=CC=CC=C1[S+](C=1C(=CC=CC=1)C(C)(C)C)C1=CC=CC=C1C(C)(C)C MKZVNKSVBFCDLB-UHFFFAOYSA-M 0.000 description 1
- GRPURDFRFHUDSP-UHFFFAOYSA-N tris(prop-2-enyl) benzene-1,2,4-tricarboxylate Chemical compound C=CCOC(=O)C1=CC=C(C(=O)OCC=C)C(C(=O)OCC=C)=C1 GRPURDFRFHUDSP-UHFFFAOYSA-N 0.000 description 1
- XLRPYZSEQKXZAA-OCAPTIKFSA-N tropane Chemical compound C1CC[C@H]2CC[C@@H]1N2C XLRPYZSEQKXZAA-OCAPTIKFSA-N 0.000 description 1
- 229930004006 tropane Natural products 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- ZTWTYVWXUKTLCP-UHFFFAOYSA-N vinylphosphonic acid Chemical compound OP(O)(=O)C=C ZTWTYVWXUKTLCP-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Classifications
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
본 발명은, 해상성이 우수한 경화물의 제조 방법, 상기 경화물의 제조 방법에 이용되는 수지 조성물 및 현상액, 상기 경화물의 제조 방법을 포함하는 적층체의 제조 방법, 및, 상기 경화물의 제조 방법 또는 상기 적층체의 제조 방법을 포함하는 전자 디바이스의 제조 방법을 제공한다. 경화물의 제조 방법은, 수지, 노광에 의하여 산을 발생하는 화합물 및 용제를 포함하는 수지 조성물을 이용하는 막 형성 공정, 노광 공정, 현상 공정, 및, 변성 공정을 포함하고, 수지가 폴리이미드 전구체이며, 수지는 산의 작용에 의하여 극성이 증대되는 반응을 발생하는 기를 갖고, 현상액에 있어서의 유기 용제의 함유량이 80질량% 이상이며, 변성에 의하여, 수지 조성물이 포함하는 용제에 대하여 상기 패턴의 용해성이 저하된다.The present invention provides a method for producing a cured product having excellent resolution, a resin composition and a developing solution used in the method for producing the cured product, a method for producing a laminate including the method for producing the cured product, and a method for producing the cured product or the laminate. A manufacturing method of an electronic device including a manufacturing method of a sieve is provided. The method for producing a cured product includes a film formation step using a resin composition containing a compound that generates an acid by exposure and a solvent, an exposure step, a developing step, and a denaturation step, wherein the resin is a polyimide precursor, The resin has a group that generates a reaction in which polarity is increased by the action of an acid, the content of the organic solvent in the developing solution is 80% by mass or more, and the solubility of the pattern with respect to the solvent contained in the resin composition is reduced by modification. It is lowered.
Description
본 발명은, 경화물의 제조 방법, 수지 조성물, 현상액, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법에 관한 것이다.The present invention relates to a method for producing a cured product, a resin composition, a developing solution, a method for producing a laminate, and a method for manufacturing a semiconductor device.
폴리이미드 등의 수지는, 내열성 및 절연성 등이 우수하기 때문에, 다양한 용도에 적용되고 있다. 상기 용도로서는 특별히 한정되지 않지만, 실장용의 반도체 디바이스를 예로 들면, 이들 수지를 포함하는 패턴을, 절연막이나 밀봉재의 재료, 또는, 보호막으로서 이용하는 것 등을 들 수 있다. 또, 이들 수지를 포함하는 패턴은, 플렉시블 기판의 베이스 필름이나 커버 레이 등으로서도 이용되고 있다.Since resins such as polyimide are excellent in heat resistance, insulating properties, etc., they are applied to various applications. The use is not particularly limited, but when a semiconductor device for mounting is taken as an example, a pattern made of these resins may be used as a material for an insulating film or sealing material, or as a protective film. In addition, patterns made of these resins are also used as base films and cover lays for flexible substrates.
예를 들면 상술한 용도에 있어서, 폴리이미드 등의 수지는, 폴리이미드 전구체를 포함하는 수지 조성물의 형태로 이용된다.For example, in the applications described above, resin such as polyimide is used in the form of a resin composition containing a polyimide precursor.
이와 같은 수지 조성물을, 예를 들면 도포 등에 의하여 기재(基材) 상에 적용하고, 그 후, 필요에 따라 노광, 현상, 변성 등을 행함으로써, 폴리이미드 전구체의 경화물을 기재 상에 형성할 수 있다.A cured product of a polyimide precursor is formed on a substrate by applying such a resin composition onto a substrate by, for example, coating, and thereafter performing exposure, development, modification, etc. as necessary. can
수지 조성물은, 공지의 도포 방법 등에 의하여 적용 가능하고, 현상에 의하여 미세한 패턴, 복잡한 형상의 패턴 등을 형성할 수 있기 때문에, 경화막의 설계의 자유도가 높은 등, 제조상의 적응성이 우수하다고 할 수 있다. 폴리이미드 등이 갖는 높은 성능에 더하여, 이와 같은 제조상의 적응성이 우수한 관점에서, 폴리이미드 전구체를 포함하는 수지 조성물을 이용한 경화물의 제조 방법에 대하여, 산업상의 응용 전개가 점점 기대되고 있다.Since the resin composition can be applied by a known coating method or the like and can form a fine pattern, a complex pattern or the like by development, it can be said that the cured film has a high degree of freedom in design and is excellent in manufacturing adaptability. . In addition to the high performance of polyimide and the like, from the viewpoint of excellent adaptability in manufacturing, industrial application development of a method for producing a cured product using a resin composition containing a polyimide precursor is increasingly expected.
예를 들면, 특허문헌 1에는, 네거티브형 감광성 수지 조성물을 이용하여 도막 또는 성형체를 형성하고, 상기 도막 또는 성형체에 소정 패턴상으로 전자파를 조사 후, 미노광부의 도막을 제거하여 패턴을 형성하는 현상 공정 전에, 상기 도막 또는 성형체를 가열하는 공정을 갖는 릴리프 패턴의 제조 방법으로서, 상기 가열하는 공정이, 계 외로부터 적극적 또한 계속적으로 기체가 공급되며, 또한, 상기 도막 또는 성형체로부터 발생하는 휘발성 성분이 계 외로 적극적으로 제거되는 분위기하에서, 열매체를 개재하거나, 전자파의 복사에 의하여, 상기 도막 또는 성형체를 가열하는 공정인 것을 특징으로 하는, 릴리프 패턴의 제조 방법이 기재되어 있다.For example, in Patent Document 1, a phenomenon in which a coating film or molded body is formed using a negative photosensitive resin composition, and after irradiating electromagnetic waves to the coated film or molded body in a predetermined pattern, the coating film of unexposed areas is removed to form a pattern. A method for manufacturing a relief pattern having a step of heating the coating film or molded body before the step, wherein in the heating step, gas is actively and continuously supplied from outside the system, and volatile components generated from the coating film or molded body are A method for producing a relief pattern is described, characterized in that it is a step of heating the coating film or molded body through a heat medium or by electromagnetic wave radiation in an atmosphere that is actively removed from the system.
종래의 경화물의 제조 방법에 있어서, 해상성을 향상시킬 것이 요구되고 있다.In conventional methods for producing cured products, it is desired to improve resolution.
본 발명은, 해상성이 우수한 경화물의 제조 방법, 상기 경화물의 제조 방법에 이용되는 수지 조성물, 상기 경화물의 제조 방법에 이용되는 현상액, 상기 경화물의 제조 방법을 포함하는 적층체의 제조 방법, 및, 상기 경화물의 제조 방법 또는 상기 적층체의 제조 방법을 포함하는 전자 디바이스의 제조 방법을 제공하는 것을 목적으로 한다.The present invention provides a method for producing a cured product having excellent resolution, a resin composition used in the method for producing the cured product, a developer used in the method for producing the cured product, and a method for producing a laminate including the method for producing the cured product, and It is an object of the present invention to provide a method of manufacturing an electronic device including the method of manufacturing the cured product or the method of manufacturing the laminate.
본 발명의 대표적인 실시형태의 예를 이하에 나타낸다.Examples of representative embodiments of the present invention are shown below.
<1> 수지, 활성광선 또는 방사선의 조사에 의하여 산을 발생하는 화합물, 및, 용제를 포함하는 수지 조성물을 기재 상에 적용하여 막을 형성하는 막 형성 공정,<1> A film forming step of forming a film by applying a resin composition containing a resin, a compound that generates an acid by irradiation with actinic rays or radiation, and a solvent on a substrate;
상기 막을 선택적으로 노광하는 노광 공정,An exposure step of selectively exposing the film to light;
상기 노광 후의 막을 현상액을 이용하여 현상하여 패턴을 형성하는 현상 공정, 및,A developing step of developing the film after exposure using a developer to form a pattern, and
상기 패턴을 변성시키는 변성 공정을 포함하고,A denaturation step of denaturing the pattern;
상기 수지가 폴리이미드 전구체이며,The resin is a polyimide precursor,
상기 수지는 산의 작용에 의하여 극성이 증대되는 반응을 발생하는 기를 갖고,The resin has a group that generates a reaction in which polarity is increased by the action of an acid,
상기 현상액의 전체 질량에 대한 유기 용제의 함유량이 80질량% 이상이며,The content of the organic solvent relative to the total mass of the developer is 80% by mass or more,
상기 변성에 의하여, 상기 수지 조성물이 포함하는 용제에 대하여 상기 패턴의 용해성이 저하되는, 경화물의 제조 방법.The method for producing a cured product in which the solubility of the pattern in the solvent contained in the resin composition is reduced by the modification.
<2> 얻어지는 경화물의 막두께가 5μm 이상인, <1>에 기재된 경화물의 제조 방법.<2> The method for producing a cured product according to <1>, wherein the obtained cured product has a film thickness of 5 µm or more.
<3> 상기 수지가 하기 식 (1)로 나타나는 반복 단위를 포함하는, <1> 또는 <2>에 기재된 경화물의 제조 방법.<3> The method for producing a cured product according to <1> or <2>, wherein the resin contains a repeating unit represented by formula (1) below.
[화학식 1][Formula 1]
상기 식 (1) 중, R1은, 4가의 유기기를 나타낸다; 복수의 R1은 서로 동일해도 되고 상이해도 된다; R2는, 2가의 유기기를 나타낸다; 복수의 R2는 서로 동일해도 되고 상이해도 된다; R3은, 각각 독립적으로, 수소 원자 또는 유기기를 나타낸다.In the formula (1), R 1 represents a tetravalent organic group; A plurality of R 1 may be the same as or different from each other; R 2 represents a divalent organic group; A plurality of R 2 may be the same as or different from each other; R 3 each independently represents a hydrogen atom or an organic group.
<4> 상기 식 (1)로 나타나는 반복 단위가 상기 산의 작용에 의하여 극성이 증대되는 반응을 발생하는 기를 갖는, <3>에 기재된 경화물의 제조 방법.<4> The method for producing a cured product according to <3>, wherein the repeating unit represented by Formula (1) has a group generating a reaction in which polarity is increased by the action of the acid.
<5> 상기 수지 조성물이 산포착제를 더 포함하는, <1> 내지 <4> 중 어느 하나에 기재된 경화물의 제조 방법.<5> The method for producing a cured product according to any one of <1> to <4>, in which the resin composition further contains an acid trapping agent.
<6> 상기 현상액이, 한센 용해도 파라미터의 수소 결합항 dH의 값이 8 이하인 유기 용제를 80질량% 이상 포함하는, <1> 내지 <5> 중 어느 하나에 기재된 경화물의 제조 방법.<6> The method for producing a cured product according to any one of <1> to <5>, wherein the developer contains 80% by mass or more of an organic solvent having a hydrogen bond term dH value of 8 or less in the Hansen solubility parameter.
<7> 상기 산의 작용에 의하여 극성이 증대되는 반응을 발생하는 기가 하기 식 (A-1) 또는 하기 식 (A-2)로 나타나는 기인, <1> 내지 <6> 중 어느 하나에 기재된 경화물의 제조 방법.<7> Curing according to any one of <1> to <6>, wherein the group generating a reaction in which the polarity is increased by the action of the acid is a group represented by the following formula (A-1) or the following formula (A-2) How to make water.
[화학식 2][Formula 2]
식 (A-1) 중, RA1~RA5는 각각 독립적으로, 수소 원자 또는 1가의 유기기를 나타내고, RA1~RA5 중 적어도 2개가 결합하여 환 구조를 형성하고 있어도 되며, *는 다른 구조와의 결합 부위를 나타낸다;In formula (A-1), R A1 to R A5 each independently represent a hydrogen atom or a monovalent organic group, and at least two of R A1 to R A5 may be bonded to form a ring structure, and * indicates another structure indicates a binding site with;
식 (A-2) 중, RA6~RA8은 각각 독립적으로, 1가의 유기기를 나타내고, RA6~RA8 중 적어도 2개가 결합하여 환 구조를 형성하고 있어도 되며, *는 다른 구조와의 결합 부위를 나타낸다.In formula (A-2), R A6 to R A8 each independently represent a monovalent organic group, and at least two of R A6 to R A8 may be bonded to form a ring structure, and * is a bond with another structure. indicates the area.
<8> 상기 변성 공정에 있어서, 상기 패턴의 가열이 행해지는, <1> 내지 <7> 중 어느 하나에 기재된 경화물의 제조 방법.<8> The method for producing a cured product according to any one of <1> to <7>, wherein in the modification step, the pattern is heated.
<9> 상기 노광 공정 후, 상기 현상 공정 전에, 상기 막을 가열하는 공정을 더 포함하는, <1> 내지 <8> 중 어느 하나에 기재된 경화물의 제조 방법.<9> The method for producing a cured product according to any one of <1> to <8>, further including a step of heating the film after the exposure step and before the image development step.
<10> <1> 내지 <9> 중 어느 하나에 기재된 경화물의 제조 방법을 복수 회 반복하는 것을 포함하는 적층체의 제조 방법.<10> A method for producing a laminate comprising repeating the method for producing a cured product according to any one of <1> to <9> a plurality of times.
<11> 복수 회 행해지는 경화물의 제조 방법의 사이에, 경화물로 이루어지는 층 상에 금속층을 형성하는 금속층 형성 공정을 더 포함하는, <10>에 기재된 적층체의 제조 방법.<11> The method for producing a laminate according to <10>, which further includes a metal layer forming step of forming a metal layer on a layer made of a cured product between the methods for producing a cured product performed a plurality of times.
<12> <1> 내지 <9> 중 어느 하나에 기재된 경화물의 제조 방법, 또는, <10> 혹은 <11>에 기재된 적층체의 제조 방법을 포함하는, 전자 디바이스의 제조 방법.<12> The manufacturing method of an electronic device including the manufacturing method of the hardened|cured material in any one of <1>-<9>, or the manufacturing method of a laminated body as described in <10> or <11>.
<13> <1> 내지 <9> 중 어느 하나에 기재된 경화물의 제조 방법에 이용되는 수지 조성물.<13> The resin composition used for the manufacturing method of the hardened|cured material in any one of <1>-<9>.
<14> <1> 내지 <9> 중 어느 하나에 기재된 경화물의 제조 방법에 이용되는 현상액.<14> A developing solution used in the method for producing a cured product according to any one of <1> to <9>.
본 발명에 의하면, 해상성이 우수한 경화물의 제조 방법, 상기 경화물의 제조 방법에 이용되는 수지 조성물, 상기 경화물의 제조 방법에 이용되는 현상액, 상기 경화물의 제조 방법을 포함하는 적층체의 제조 방법, 및, 상기 경화물의 제조 방법 또는 상기 적층체의 제조 방법을 포함하는 전자 디바이스의 제조 방법이 제공된다.According to the present invention, a method for producing a cured product having excellent resolution, a resin composition used in the method for producing the cured product, a developer used in the method for producing the cured product, and a method for producing a laminate including the method for producing the cured product, and , A method of manufacturing an electronic device including the method of manufacturing the cured product or the method of manufacturing the laminate is provided.
이하, 본 발명의 주요한 실시형태에 대하여 설명한다. 그러나, 본 발명은, 명시한 실시형태에 한정되는 것은 아니다.EMBODIMENT OF THE INVENTION Hereinafter, the main embodiment of this invention is described. However, the present invention is not limited to the specific embodiments.
본 명세서에 있어서 "~"라는 기호를 이용하여 나타나는 수치 범위는, "~"의 전후에 기재되는 수치를 각각 하한값 및 상한값으로서 포함하는 범위를 의미한다.In this specification, the numerical range represented by the symbol "-" means the range which includes the numerical value described before and after "-" as a lower limit value and an upper limit value, respectively.
본 명세서에 있어서 "공정"이라는 말은, 독립적인 공정뿐만 아니라, 그 공정의 소기의 작용을 달성할 수 있는 한에 있어서, 다른 공정과 명확하게 구별할 수 없는 공정도 포함하는 의미이다.In this specification, the word "process" is meant to include not only an independent process but also a process that cannot be clearly distinguished from other processes as long as the intended action of the process can be achieved.
본 명세서에 있어서의 기(원자단)의 표기에 있어서, 치환 및 무치환을 기재하고 있지 않은 표기는, 치환기를 갖지 않는 기(원자단)와 함께 치환기를 갖는 기(원자단)도 포함한다. 예를 들면, "알킬기"란, 치환기를 갖지 않는 알킬기(무치환 알킬기)뿐만 아니라, 치환기를 갖는 알킬기(치환 알킬기)도 포함한다.In the notation of a group (atomic group) in this specification, the notation that does not describe substitution and unsubstitution includes a group (atomic group) having a substituent as well as a group (atomic group) having no substituent. For example, the "alkyl group" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
본 명세서에 있어서 "노광"이란, 특별히 설명하지 않는 한, 광을 이용한 노광뿐만 아니라, 전자선, 이온빔 등의 입자선을 이용한 노광도 포함한다. 또, 노광에 이용되는 광으로서는, 수은등의 휘선 스펙트럼, 엑시머 레이저로 대표되는 원자외선, 극자외선(EUV광), X선, 전자선 등의 활성광선 또는 방사선을 들 수 있다.In this specification, "exposure" includes not only exposure using light but also exposure using particle beams such as electron beams and ion beams, unless otherwise specified. Further, examples of light used for exposure include bright line spectrum of a mercury lamp, far ultraviolet rays represented by an excimer laser, extreme ultraviolet rays (EUV light), active rays such as X-rays and electron beams, or radiation.
본 명세서에 있어서, "(메트)아크릴레이트"는, "아크릴레이트" 및 "메타크릴레이트"의 양방, 또는, 어느 하나를 의미하고, "(메트)아크릴"은, "아크릴" 및 "메타크릴"의 양방, 또는, 어느 하나를 의미하며, "(메트)아크릴로일"은, "아크릴로일" 및 "메타크릴로일"의 양방, 또는, 어느 하나를 의미한다.In the present specification, "(meth)acrylate" means either or both of "acrylate" and "methacrylate", and "(meth)acryl" refers to "acryl" and "methacryl". “(meth)acryloyl” means either or both of “acryloyl” and “methacryloyl”.
본 명세서에 있어서, 구조식 중의 Me는 메틸기를 나타내고, Et는 에틸기를 나타내며, Bu는 뷰틸기를 나타내고, Ph는 페닐기를 나타낸다.In the present specification, Me in the structural formula represents a methyl group, Et represents an ethyl group, Bu represents a butyl group, and Ph represents a phenyl group.
본 명세서에 있어서, 전고형분이란, 조성물의 전체 성분으로부터 용제를 제외한 성분의 총질량을 말한다. 또 본 명세서에 있어서, 고형분 농도란, 조성물의 총질량에 대한, 용제를 제외한 다른 성분의 질량 백분율이다.In this specification, the total solid content refers to the total mass of components excluding the solvent from all components of the composition. In addition, in this specification, solid content concentration is the mass percentage of other components except a solvent with respect to the total mass of a composition.
본 명세서에 있어서, 중량 평균 분자량(Mw) 및 수평균 분자량(Mn)은, 특별히 설명하지 않는 한, 젤 침투 크로마토그래피(GPC)법을 이용하여 측정한 값이며, 폴리스타이렌 환산값으로서 정의된다. 본 명세서에 있어서, 중량 평균 분자량(Mw) 및 수평균 분자량(Mn)은, 예를 들면, HLC-8220GPC(도소(주)제)를 이용하고, 칼럼으로서 가드 칼럼 HZ-L, TSKgel Super HZM-M, TSKgel Super HZ4000, TSKgel Super HZ3000 및 TSKgel Super HZ2000(이상, 도소(주)제)을 직렬로 연결하여 이용함으로써 구할 수 있다. 그들의 분자량은 특별히 설명하지 않는 한, 용리액으로서 THF(테트라하이드로퓨란)를 이용하여 측정한 것으로 한다. 단, 용해성이 낮은 경우 등, 용리액으로서 THF가 적합하지 않은 경우에는 NMP(N-메틸-2-피롤리돈)를 이용할 수도 있다. 또, GPC 측정에 있어서의 검출은 특별히 설명하지 않는 한, UV선(자외선)의 파장 254nm 검출기를 사용한 것으로 한다.In this specification, the weight average molecular weight (Mw) and the number average molecular weight (Mn) are values measured using a gel permeation chromatography (GPC) method, and are defined as polystyrene conversion values, unless otherwise specified. In this specification, the weight average molecular weight (Mw) and the number average molecular weight (Mn) are, for example, using HLC-8220GPC (manufactured by Tosoh Co., Ltd.), and as a column, guard column HZ-L, TSKgel Super HZM- M, TSKgel Super HZ4000, TSKgel Super HZ3000 and TSKgel Super HZ2000 (above, manufactured by Tosoh Co., Ltd.) are connected in series and used. These molecular weights shall be measured using THF (tetrahydrofuran) as an eluent unless otherwise specified. However, NMP (N-methyl-2-pyrrolidone) can also be used when THF is not suitable as an eluent, such as when the solubility is low. In addition, detection in the GPC measurement assumes that a detector with a wavelength of 254 nm of UV rays (ultraviolet rays) is used unless otherwise specified.
본 명세서에 있어서, 적층체를 구성하는 각층(各層)의 위치 관계에 대하여, "상(上)" 또는 "하(下)"라고 기재했을 때에는, 주목하고 있는 복수의 층 중 기준이 되는 층의 상측 또는 하측에 다른 층이 있으면 된다. 즉, 기준이 되는 층과 상기 다른 층의 사이에, 추가로 제3의 층이나 요소가 개재하고 있어도 되고, 기준이 되는 층과 상기 다른 층은 접하고 있을 필요는 없다. 또, 특별히 설명하지 않는 한, 기재에 대하여 층이 적층되어 가는 방향을 "상"이라고 칭하거나, 또는, 수지 조성물층이 있는 경우에는, 기재로부터 수지 조성물층을 향하는 방향을 "상"이라고 칭하며, 그 반대 방향을 "하"라고 칭한다. 또한, 이와 같은 상하 방향의 설정은, 본 명세서 중에 있어서의 편의를 위함이며, 실제의 양태에 있어서는, 본 명세서에 있어서의 "상"방향은, 연직 상향과 상이한 경우도 있을 수 있다.In this specification, when the positional relationship of each layer constituting the laminate is described as "upper" or "lower", the reference layer among a plurality of layers of interest It is only necessary if there is another layer on the upper or lower side. That is, a third layer or element may be further interposed between the layer serving as the standard and the other layer, and the layer serving as the standard and the other layer need not be in contact with each other. In addition, unless otherwise specified, the direction in which layers are laminated with respect to the substrate is referred to as "upper", or, in the case of a resin composition layer, the direction from the substrate to the resin composition layer is referred to as "upper", The opposite direction is referred to as "lower". Note that the setting of such a vertical direction is for convenience in this specification, and in an actual aspect, there may be cases where the “upper” direction in this specification is different from vertically upward.
본 명세서에 있어서, 특별한 기재가 없는 한, 조성물은, 조성물에 포함되는 각 성분으로서, 그 성분에 해당하는 2종 이상의 화합물을 포함해도 된다. 또, 특별한 기재가 없는 한, 조성물에 있어서의 각 성분의 함유량이란, 그 성분에 해당하는 모든 화합물의 합계 함유량을 의미한다.In this specification, as long as there is no special description, a composition may also contain two or more types of compounds corresponding to the component as each component contained in a composition. In addition, unless otherwise specified, the content of each component in the composition means the total content of all the compounds corresponding to the component.
본 명세서에 있어서, 특별히 설명하지 않는 한, 온도는 23℃, 기압은 101,325Pa(1기압), 상대 습도는 50%RH이다.In this specification, unless otherwise specified, the temperature is 23°C, the air pressure is 101,325 Pa (1 atmosphere), and the relative humidity is 50% RH.
본 명세서에 있어서, 바람직한 양태의 조합은, 보다 바람직한 양태이다.In this specification, a combination of preferable aspects is a more preferable aspect.
(경화물의 제조 방법)(Method of producing cured product)
본 발명의 경화물의 제조 방법은, 수지, 활성광선 또는 방사선의 조사에 의하여 산을 발생하는 화합물(이하, "광산발생제"라고도 한다.), 및, 용제를 포함하는 수지 조성물을 기재 상에 적용하여 막을 형성하는 막 형성 공정, 상기 막을 활성광선 또는 방사선을 이용하여 패턴 노광하는 노광 공정, 현상액에 의하여, 상기 노광 후의 막을 현상하여 패턴을 얻는 현상 공정, 및, 상기 패턴을 변성시키는 변성 공정을 포함하고, 상기 수지가 폴리이미드 전구체이며, 상기 수지는 산의 작용에 의하여 극성이 증대되는 반응을 발생하는 기(이하, "극성 변환기"라고도 한다.)를 갖고, 상기 현상액의 전체 질량에 대한 유기 용제의 함유량이 80질량% 이상이며, 상기 변성에 의하여, 상기 수지 조성물이 포함하는 용제에 대하여 상기 패턴의 용해성이 저하되는, 경화물의 제조 방법이다.In the method for producing a cured product of the present invention, a resin composition containing a resin, a compound that generates an acid by irradiation with actinic rays or radiation (hereinafter also referred to as "photoacid generator"), and a solvent is applied to a substrate. A film forming process of forming a film by using actinic light or radiation, an exposure process of pattern exposure of the film using actinic light or radiation, a developing process of developing a film after exposure with a developer to obtain a pattern, and a denaturation process of modifying the pattern. And, the resin is a polyimide precursor, the resin has a group that generates a reaction in which polarity is increased by the action of an acid (hereinafter, also referred to as a "polarity converter"), and an organic solvent based on the total mass of the developing solution It is a method for producing a cured product in which the content of is 80% by mass or more, and the solubility of the pattern in the solvent contained in the resin composition decreases due to the modification.
이하, 본 발명에 있어서, 폴리이미드 전구체이며, 극성 변환기를 갖는 수지를, "특정 수지"라고도 한다.Hereinafter, in this invention, resin which is a polyimide precursor and has a polarity converter is also called "specific resin."
본 발명의 경화물의 제조 방법에 의하면, 해상성이 우수한 경화물이 얻어진다.According to the method for producing a cured product of the present invention, a cured product having excellent resolution is obtained.
상기 효과가 얻어지는 메커니즘은 불명확하지만, 하기와 같이 추측된다.Although the mechanism by which the said effect is obtained is unknown, it is guessed as follows.
극성 변환기를 갖는 폴리이미드 전구체 및 광산발생제를 포함하는 수지 조성물로 형성된 막을 이용하고, 또한, 유기 용제의 함유량이 80질량% 이상인 현상액을 이용함으로써, 네거티브형 패턴을 형성할 수 있다.A negative pattern can be formed by using a film formed from a resin composition containing a polyimide precursor having a polarity converter and a photoacid generator, and using a developing solution having an organic solvent content of 80% by mass or more.
네거티브형 패턴이란, 현상 공정에 있어서 막의 미노광부가 제거된 패턴을 말한다.The negative pattern refers to a pattern in which the unexposed portion of the film is removed in the developing step.
구체적으로는, 노광 공정에 있어서, 노광부에서는 광산발생제로부터 산이 발생하고, 상기 산의 작용에 의하여 수지의 극성 변환기에 있어서의 극성이 증대되기 때문에, 노광부에 있어서는 상기 수지의 상기 현상액에 대한 용해성이 저하되며, 현상 공정 후에는 노광부가 잔존하고, 미노광부가 제거된다.Specifically, in the exposure step, acid is generated from a photoacid generator in the exposed portion, and the action of the acid increases the polarity of the resin in the polarity converter. Solubility is reduced, and after the development process, the exposed portion remains and the unexposed portion is removed.
여기에서, 상기 극성의 증대에 의하여, 노광부에 대한 현상액의 침입이 억제되기 때문에, 얻어지는 패턴의 현상액에 의한 팽윤이 억제된다고 생각된다.Here, since penetration of the developing solution into the exposed portion is suppressed by the increase in the polarity, it is considered that the swelling of the obtained pattern due to the developing solution is suppressed.
상기 팽윤의 억제에 의하여, 예를 들면 홀 패턴을 형성하는 경우, 미세한 홀 패턴에 있어서도 개구된 홀 패턴이 얻어지기 쉽다고 생각된다.It is thought that suppression of the swelling makes it easy to obtain an open hole pattern even in a fine hole pattern, for example, when a hole pattern is formed.
또, 상기 팽윤의 억제에 의하여, 예를 들면 라인 패턴을 형성하는 경우, 라인부의 팽윤이 억제되고, 보다 미세한 라인 패턴이 형성되기 쉽다고 생각된다.In addition, it is thought that suppression of the swelling suppresses swelling of the line portion in the case of forming a line pattern, for example, so that a finer line pattern can be easily formed.
즉, 본 발명의 경화물의 제조 방법에 의하면, 미세한 패턴을 형성할 수 있어, 해상성이 우수하다고 할 수 있다.That is, according to the method for producing a cured product of the present invention, a fine pattern can be formed, and it can be said that the resolution is excellent.
또한, 본 발명의 조성물은 변성에 의하여 수지 조성물에 포함되는 용제에 대한 용해성이 저하되기 때문에, 얻어지는 패턴 상에 또 다른 수지 조성물을 적용하여 적층 구조로 한 경우에 있어서도, 패턴이 수지 조성물에 용해되기 어렵고, 적층 시의 1층째의 패턴의 치수 안정성이 우수하며, 또, 적층 시의 2층째의 패턴의 해상성이 우수한 등, 적층 패턴의 형성성도 우수하다고 추측된다.In addition, since the solubility of the composition of the present invention in the solvent contained in the resin composition decreases due to modification, even when another resin composition is applied to the obtained pattern to form a laminated structure, the pattern does not dissolve in the resin composition. It is difficult, and the dimensional stability of the first-layer pattern at the time of lamination is excellent, and the resolution of the second-layer pattern at the time of lamination is excellent.
여기에서, 특허문헌 1에는, 극성 변환기를 갖는 폴리이미드 전구체 및 광산발생제를 포함하는 수지 조성물로 형성된 막을 이용하고, 또한, 유기 용제의 함유량이 80질량% 이상인 현상액을 이용하는 것에 대해서는 기재되어 있지 않다.Here, Patent Literature 1 uses a film formed of a resin composition containing a polyimide precursor having a polarity converter and a photoacid generator, and uses a developing solution having an organic solvent content of 80% by mass or more. It is not described. .
이하, 본 발명의 경화물의 제조 방법에 대하여 상세하게 설명한다.Hereinafter, the method for producing the cured product of the present invention will be described in detail.
<막 형성 공정><Film formation process>
본 발명의 경화물의 제조 방법은, 수지, 활성광선 또는 방사선의 조사에 의하여 산을 발생하는 화합물, 및, 용제를 포함하는 수지 조성물을 기재 상에 적용하여 막을 형성하는 막 형성 공정을 포함한다.The method for producing a cured product of the present invention includes a film forming step of forming a film by applying a resin composition containing a resin, a compound that generates an acid by irradiation with actinic rays or radiation, and a solvent on a substrate.
본 발명에 있어서 이용되는 수지 조성물의 상세에 대해서는 후술한다.The detail of the resin composition used in this invention is mentioned later.
〔기재〕〔write〕
기재의 종류는, 용도에 따라 적절히 정할 수 있지만, 실리콘, 질화 실리콘, 폴리실리콘, 산화 실리콘, 어모퍼스 실리콘 등의 반도체 제작 기재, 석영, 유리, 광학 필름, 세라믹 재료, 증착막, 자성막, 반사막, Ni, Cu, Cr, Fe 등의 금속 기재(예를 들면, 금속으로 형성된 기재, 및, 금속층이 예를 들면 도금이나 증착 등에 의하여 형성된 기재 중 어느 것이어도 된다), 종이, SOG(Spin On Glass), TFT(박막 트랜지스터) 어레이 기재, 몰드 기재, 플라즈마 디스플레이 패널(PDP)의 전극판 등을 들 수 있으며, 특별히 제약되지 않는다. 본 발명에서는, 특히, 반도체 제작 기재가 바람직하고, 실리콘 기재, Cu 기재 및 몰드 기재가 보다 바람직하다.The type of base material can be appropriately determined depending on the application, but semiconductor manufacturing base materials such as silicon, silicon nitride, polysilicon, silicon oxide, and amorphous silicon, quartz, glass, optical film, ceramic material, vapor deposition film, magnetic film, reflective film, Ni , metal substrates such as Cu, Cr, and Fe (for example, a substrate formed of metal and a substrate in which a metal layer is formed, for example, by plating or vapor deposition), paper, SOG (Spin On Glass), TFT (Thin Film Transistor) array substrates, mold substrates, electrode plates of plasma display panels (PDP), and the like, are not particularly limited. In the present invention, semiconductor fabrication substrates are particularly preferred, and silicon substrates, Cu substrates, and mold substrates are more preferred.
또, 이들 기재에는 헥사메틸다이실라제인(HMDS) 등에 의한 밀착층이나 산화층 등의 층이 표면에 마련되어 있어도 된다.In addition, layers such as an adhesion layer or an oxide layer by hexamethyldisilazane (HMDS) or the like may be provided on the surface of these substrates.
또, 기재의 형상은 특별히 한정되지 않으며, 원형상이어도 되고, 직사각형상이어도 된다.In addition, the shape of the substrate is not particularly limited, and may be circular or rectangular.
기재의 사이즈로서는, 원형상이면, 예를 들면 직경이 100~450mm이며, 바람직하게는 200~450mm이다. 직사각형상이면, 예를 들면 단변의 길이가 100~1000mm이며, 바람직하게는 200~700mm이다.As the size of the substrate, if it is circular, the diameter is, for example, 100 to 450 mm, preferably 200 to 450 mm. If it is a rectangular shape, the length of a short side is 100-1000 mm, for example, Preferably it is 200-700 mm.
또, 기재로서는, 예를 들면 판상, 바람직하게는 패널상의 기재(기판)가 이용된다.Moreover, as a base material, for example, a plate shape, preferably a panel shape base material (substrate) is used.
또, 수지층(예를 들면, 경화물로 이루어지는 층)의 표면이나 금속층의 표면에 수지 조성물을 적용하여 막을 형성하는 경우는, 수지층이나 금속층이 기재가 된다.In the case of forming a film by applying a resin composition to the surface of a resin layer (for example, a layer made of a cured material) or the surface of a metal layer, the resin layer or metal layer serves as the base material.
본 발명의 수지 조성물을 기재 상에 적용하는 수단으로서는, 도포가 바람직하다.As a means for applying the resin composition of the present invention onto a substrate, application is preferable.
적용하는 수단으로서는, 구체적으로는, 딥 코트법, 에어 나이프 코트법, 커튼 코트법, 와이어 바 코트법, 그라비어 코트법, 익스트루전 코트법, 스프레이 코트법, 스핀 코트법, 슬릿 코트법, 잉크젯법 등이 예시된다. 막의 두께의 균일성의 관점에서, 보다 바람직하게는 스핀 코트법, 슬릿 코트법, 스프레이 코트법, 또는, 잉크젯법이며, 막의 두께의 균일성의 관점 및 생산성의 관점에서 스핀 코트법 및 슬릿 코트법이 바람직하다. 방법에 따라 수지 조성물의 고형분 농도나 도포 조건을 조정함으로써, 원하는 두께의 막을 얻을 수 있다. 또, 기재의 형상에 따라서도 도포 방법을 적절히 선택할 수 있으며, 웨이퍼 등의 원형 기재이면 스핀 코트법, 스프레이 코트법, 잉크젯법 등이 바람직하고, 직사각형 기재이면 슬릿 코트법이나 스프레이 코트법, 잉크젯법 등이 바람직하다. 스핀 코트법의 경우는, 예를 들면, 500~3,500rpm의 회전수로, 10초~3분 정도 적용할 수 있다.As the means to be applied, specifically, dip coating method, air knife coating method, curtain coating method, wire bar coating method, gravure coating method, extrusion coating method, spray coating method, spin coating method, slit coating method, ink jet law, etc. From the viewpoint of uniformity of film thickness, more preferably a spin coating method, a slit coating method, a spray coating method, or an inkjet method. From the viewpoint of uniformity of film thickness and productivity, the spin coating method and the slit coating method are preferred. do. A film having a desired thickness can be obtained by adjusting the solid content concentration of the resin composition and application conditions according to the method. In addition, the coating method can be appropriately selected depending on the shape of the substrate. For circular substrates such as wafers, spin coating, spray coating, and inkjet methods are preferable, and for rectangular substrates, slit coating, spray coating, and inkjet methods are preferred. etc. are preferred. In the case of the spin coating method, it can be applied for about 10 seconds to 3 minutes at a rotational speed of 500 to 3,500 rpm, for example.
또, 미리 가지지체 상에 상기 부여 방법에 의하여 부여하여 형성한 도막을, 기재 상에 전사(轉寫)하는 방법을 적용할 수도 있다.Moreover, a method of transferring onto a base material a coating film applied and formed on a temporary support body in advance by the above application method can also be applied.
전사 방법에 관해서는 일본 공개특허공보 2006-023696호의 단락 0023, 0036~0051이나, 일본 공개특허공보 2006-047592호의 단락 0096~0108에 기재된 제작 방법을 본 발명에 있어서도 적합하게 이용할 수 있다.Regarding the transfer method, the production methods described in paragraphs 0023 and 0036 to 0051 of JP2006-023696 and paragraphs 0096 to 0108 of JP2006-047592 can be suitably used in the present invention.
또, 기재의 단부(端部)에 있어서 여분의 막의 제거를 행하는 공정을 행해도 된다. 이와 같은 공정의 예에는, 에지 비드 린스(EBR), 백 린스 등을 들 수 있다.Moreover, you may perform the process of removing an excess film|membrane in the edge part of a base material. Examples of such a process include edge bead rinse (EBR), back rinse, and the like.
또 수지 조성물을 기재에 도포하기 전에 기재에 다양한 용제를 도포하여, 기재의 젖음성을 향상시킨 후에 수지 조성물을 도포하는 프리웨트 공정을 채용해도 된다.Alternatively, a pre-wet process may be employed in which various solvents are applied to the substrate before the resin composition is applied to the substrate to improve wettability of the substrate, and then the resin composition is applied.
<건조 공정><Drying process>
상기 막은, 막 형성 공정(층 형성 공정) 후에, 용제를 제거하기 위하여, 형성된 막(층)을 건조하는 공정(건조 공정)에 제공되어도 된다.After the film formation process (layer formation process), the film may be subjected to a process of drying the formed film (layer) in order to remove the solvent (drying process).
즉, 본 발명의 경화물의 제조 방법은, 막 형성 공정에 의하여 형성된 막을 건조하는 건조 공정을 포함해도 된다.That is, the method for producing a cured product of the present invention may include a drying step of drying the film formed in the film formation step.
또, 상기 건조 공정은 막 형성 공정 후, 노광 공정 전에 행해지는 것이 바람직하다.Moreover, it is preferable that the said drying process is performed after a film formation process and before an exposure process.
건조 공정에 있어서의 막의 건조 온도는 50~150℃인 것이 바람직하고, 70℃~130℃가 보다 바람직하며, 90℃~110℃가 더 바람직하다. 또, 감압에 의하여 건조를 행해도 된다. 건조 시간으로서는, 30초~20분이 예시되며, 1분~10분이 바람직하고, 2분~7분이 보다 바람직하다.The drying temperature of the film in the drying step is preferably 50 to 150°C, more preferably 70°C to 130°C, still more preferably 90°C to 110°C. Moreover, you may dry by reduced pressure. As drying time, 30 seconds - 20 minutes are illustrated, 1 minute - 10 minutes are preferable, and 2 minutes - 7 minutes are more preferable.
<노광 공정><Exposure process>
상기 막은, 막을 선택적으로 노광하는 노광 공정에 제공된다.The film is subjected to an exposure step of selectively exposing the film.
즉, 본 발명의 경화물의 제조 방법은, 막 형성 공정에 의하여 형성된 막을 선택적으로 노광하는 노광 공정을 포함한다.That is, the method for producing a cured product of the present invention includes an exposure step of selectively exposing the film formed in the film formation step.
선택적으로 노광한다란, 막의 일부를 노광하는 것을 의미하고 있다. 또, 선택적으로 노광함으로써, 막에는 노광된 영역(노광부)과 노광되어 있지 않은 영역(비노광부)이 형성된다.Exposing selectively means exposing a part of the film. Further, by selective exposure, an exposed region (exposed portion) and an unexposed region (non-exposed portion) are formed in the film.
노광량은, 본 발명의 수지 조성물을 경화할 수 있는 한 특별히 정하는 것은 아니지만, 예를 들면, 파장 365nm에서의 노광 에너지 환산으로 50~10,000mJ/cm2가 바람직하고, 200~8,000mJ/cm2가 보다 바람직하다.The exposure amount is not particularly determined as long as the resin composition of the present invention can be cured, but is preferably 50 to 10,000 mJ/cm 2 , and 200 to 8,000 mJ/cm 2 in terms of exposure energy at a wavelength of 365 nm, for example. more preferable
노광 파장은, 190~1,000nm의 범위에서 적절히 정할 수 있고, 240~550nm이 바람직하다.The exposure wavelength can be appropriately determined in the range of 190 to 1,000 nm, and is preferably 240 to 550 nm.
노광 파장은, 광원과의 관계로 말하면, (1) 반도체 레이저(파장 830nm, 532nm, 488nm, 405nm, 375nm, 355nm etc.), (2) 메탈할라이드 램프, (3) 고압 수은등, g선(파장 436nm), h선(파장 405nm), i선(파장 365nm), 브로드(g, h, i선의 3파장), (4) 엑시머 레이저, KrF 엑시머 레이저(파장 248nm), ArF 엑시머 레이저(파장 193nm), F2 엑시머 레이저(파장 157nm), (5) 극단 자외선; EUV(파장 13.6nm), (6) 전자선, (7) YAG 레이저의 제2 고조파 532nm, 제3 고조파 355nm 등을 들 수 있다. 본 발명의 수지 조성물에 대해서는, 특히 고압 수은등에 의한 노광이 바람직하고, 그중에서도, i선에 의한 노광이 바람직하다. 이로써, 특히 높은 노광 감도가 얻어질 수 있다.Regarding the exposure wavelength, in relation to the light source, (1) semiconductor laser (wavelength 830nm, 532nm, 488nm, 405nm, 375nm, 355nm etc.), (2) metal halide lamp, (3) high-pressure mercury lamp, g-ray (wavelength 436nm), h-ray (wavelength 405nm), i-ray (wavelength 365nm), broad (three wavelengths of g, h, i-ray), (4) excimer laser, KrF excimer laser (wavelength 248nm), ArF excimer laser (wavelength 193nm) , F 2 excimer laser (wavelength 157 nm), (5) extreme ultraviolet; EUV (wavelength: 13.6 nm), (6) electron beam, (7) YAG laser second harmonic 532 nm, third harmonic 355 nm, and the like. Regarding the resin composition of the present invention, exposure by a high-pressure mercury lamp is particularly preferred, and exposure by i-line is particularly preferred. In this way, a particularly high exposure sensitivity can be obtained.
또, 노광의 방식은 특별히 한정되지 않으며, 본 발명의 수지 조성물로 이루어지는 막의 적어도 일부가 노광되는 방식이면 되지만, 포토마스크를 사용한 노광, 레이저 다이렉트 이미징법에 의한 노광 등을 들 수 있다.In addition, the method of exposure is not particularly limited, and any method is sufficient as long as at least a part of the film made of the resin composition of the present invention is exposed, but exposure using a photomask, exposure by a laser direct imaging method, and the like are exemplified.
<노광 후 가열 공정><Post-exposure heating process>
상기 막은, 노광 후에 가열하는 공정(노광 후 가열 공정)에 제공되어도 된다.The film may be subjected to a step of heating after exposure (post-exposure heating step).
즉, 본 발명의 경화물의 제조 방법은, 노광 공정에 의하여 노광된 막을 가열하는 노광 후 가열 공정을 포함해도 된다.That is, the method for producing a cured product of the present invention may include a post-exposure heating step of heating the film exposed in the exposure step.
노광 후 가열 공정은, 노광 공정 후, 현상 공정 전에 행할 수 있다.The post-exposure heating step can be performed after the exposure step and before the developing step.
노광 후 가열 공정에 있어서의 가열 온도는, 50℃~140℃인 것이 바람직하고, 60℃~120℃인 것이 보다 바람직하다.It is preferable that it is 50 degreeC - 140 degreeC, and, as for the heating temperature in the heating process after exposure, it is more preferable that it is 60 degreeC - 120 degreeC.
노광 후 가열 공정에 있어서의 가열 시간은, 30초간~300분간이 바람직하고, 1분간~10분간이 보다 바람직하다.30 seconds - 300 minutes are preferable, and, as for the heating time in a heating process after exposure, 1 minute - 10 minutes are more preferable.
노광 후 가열 공정에 있어서의 승온 속도는, 가열 개시 시의 온도부터 최고 가열 온도까지 1~12℃/분이 바람직하고, 2~10℃/분이 보다 바람직하며, 3~10℃/분이 더 바람직하다.The temperature increase rate in the post-exposure heating step is preferably 1 to 12°C/minute, more preferably 2 to 10°C/minute, and still more preferably 3 to 10°C/minute from the temperature at the start of heating to the maximum heating temperature.
또, 승온 속도는 가열 도중에 적절히 변경해도 된다.Moreover, you may change the temperature increase rate suitably in the middle of heating.
또, 원하는 온도로 설정 완료된 핫플레이트나 오븐 등으로 가열을 행하는 양태도 바람직하다.Moreover, the aspect which heats by the hot plate or oven etc. which have been set to the desired temperature is also preferable.
노광 후 가열 공정에 있어서의 가열 수단으로서는, 특별히 한정되지 않으며, 공지의 핫플레이트, 오븐, 적외선 히터 등을 이용할 수 있다.The heating means in the post-exposure heating step is not particularly limited, and a known hot plate, oven, infrared heater, or the like can be used.
또, 가열 시에, 질소, 헬륨, 아르곤 등의 불활성 가스를 흘려보내는 등에 의하여, 저산소 농도의 분위기에서 행하는 것도 바람직하다.Moreover, it is also preferable to carry out in the atmosphere of low oxygen concentration by flowing an inert gas, such as nitrogen, helium, and argon, at the time of heating.
<현상 공정><Development process>
노광 후의 상기 막은, 현상액을 이용하여 현상하여 패턴을 형성하는 현상 공정에 제공된다.The film after exposure is subjected to a developing process in which a pattern is formed by developing using a developing solution.
즉, 본 발명의 경화물의 제조 방법은, 노광 공정에 의하여 노광된 막을 현상액을 이용하여 현상하여 패턴을 형성하는 현상 공정을 포함한다.That is, the method for producing a cured product of the present invention includes a developing step of forming a pattern by developing a film exposed by the exposure step using a developing solution.
현상을 행함으로써, 막의 비노광부가 제거되어, 패턴이 형성된다.By performing development, the unexposed portion of the film is removed and a pattern is formed.
여기에서, 막의 비노광부가 현상 공정에 의하여 제거되는 현상을 네거티브형 현상이라고 하며, 막의 노광부가 현상 공정에 의하여 제거되는 현상을 포지티브형 현상이라고 한다.Here, a phenomenon in which an unexposed portion of a film is removed by a developing process is referred to as a negative-type phenomenon, and a phenomenon in which an exposed portion of a film is removed by a developing process is referred to as a positive-type phenomenon.
〔현상액〕〔developer〕
본 발명의 경화막의 제조 방법에 있어서 이용되는 현상액은, 현상액의 전체 질량에 대한 유기 용제의 함유량이 80질량% 이상이다.The content of the organic solvent with respect to the total mass of the developing solution used in the manufacturing method of the cured film of this invention is 80 mass % or more.
-유기 용제--Organic Solvent-
현상액은, 현상액의 전체 질량에 대하여 유기 용제를 90질량% 이상 포함하는 것이 바람직하고, 95질량% 이상 포함하는 것이 보다 바람직하며, 98질량% 이상 포함하는 것이 더 바람직하다. 상기 유기 용제의 함유량의 상한은, 특별히 한정되지 않고, 100질량%여도 된다.The developing solution preferably contains 90% by mass or more of the organic solvent, more preferably 95% by mass or more, and even more preferably 98% by mass or more of the organic solvent with respect to the total mass of the developing solution. The upper limit of the content of the organic solvent is not particularly limited, and may be 100% by mass.
또, 현상액은, 한센 용해도 파라미터의 수소 결합항 dH의 값이 8 이하인 유기 용제를 80질량% 이상 포함하는 것이 바람직하고, 90질량% 이상 포함하는 것이 보다 바람직하며, 95질량% 이상 포함하는 것이 더 바람직하고, 98질량% 이상 포함하는 것이 특히 바람직하다. 상기 dH의 값이 8 이하인 유기 용제의 함유량의 상한은, 특별히 한정되지 않고, 100질량%여도 된다.In addition, the developer preferably contains 80% by mass or more, more preferably 90% by mass or more, and more preferably 95% by mass or more of an organic solvent having a value of 8 or less in the hydrogen bond term dH of the Hansen solubility parameter. It is preferable, and it is especially preferable to include 98% by mass or more. The upper limit of the content of the organic solvent having a dH value of 8 or less is not particularly limited, and may be 100% by mass.
유기 용제에 있어서의 한센 용해도 파라미터의 수소 결합항 dH는, 한센 용해도 파라미터 소프트웨어(HSPiP)를 이용하여 산출되는 값이다.The hydrogen bond term dH of the Hansen Solubility Parameter in organic solvents is a value calculated using Hansen Solubility Parameter Software (HSPiP).
유기 용제는, 에스터류로서, 예를 들면, 아세트산 에틸, 아세트산-n-뷰틸, 폼산 아밀, 아세트산 아이소아밀, 아세트산 아이소뷰틸, 프로피온산 뷰틸, 뷰티르산 아이소프로필, 뷰티르산 에틸, 뷰티르산 뷰틸, 락트산 메틸, 락트산 에틸, γ-뷰티로락톤, ε-카프로락톤, δ-발레로락톤, 알킬옥시아세트산 알킬(예: 알킬옥시아세트산 메틸, 알킬옥시아세트산 에틸, 알킬옥시아세트산 뷰틸(예를 들면, 메톡시아세트산 메틸, 메톡시아세트산 에틸, 메톡시아세트산 뷰틸, 에톡시아세트산 메틸, 에톡시아세트산 에틸 등)), 3-알킬옥시프로피온산 알킬에스터류(예: 3-알킬옥시프로피온산 메틸, 3-알킬옥시프로피온산 에틸 등(예를 들면, 3-메톡시프로피온산 메틸, 3-메톡시프로피온산 에틸, 3-에톡시프로피온산 메틸, 3-에톡시프로피온산 에틸 등)), 2-알킬옥시프로피온산 알킬에스터류(예: 2-알킬옥시프로피온산 메틸, 2-알킬옥시프로피온산 에틸, 2-알킬옥시프로피온산 프로필 등(예를 들면, 2-메톡시프로피온산 메틸, 2-메톡시프로피온산 에틸, 2-메톡시프로피온산 프로필, 2-에톡시프로피온산 메틸, 2-에톡시프로피온산 에틸)), 2-알킬옥시-2-메틸프로피온산 메틸 및 2-알킬옥시-2-메틸프로피온산 에틸(예를 들면, 2-메톡시-2-메틸프로피온산 메틸, 2-에톡시-2-메틸프로피온산 에틸 등), 피루브산 메틸, 피루브산 에틸, 피루브산 프로필, 아세토아세트산 메틸, 아세토아세트산 에틸, 2-옥소뷰탄산 메틸, 2-옥소뷰탄산 에틸 등, 및, 에터류로서, 예를 들면, 다이에틸렌글라이콜다이메틸에터, 테트라하이드로퓨란, 에틸렌글라이콜모노메틸에터, 에틸렌글라이콜모노에틸에터, 메틸셀로솔브아세테이트, 에틸셀로솔브아세테이트, 다이에틸렌글라이콜모노메틸에터, 다이에틸렌글라이콜모노에틸에터, 다이에틸렌글라이콜모노뷰틸에터, 프로필렌글라이콜모노메틸에터(PGME), 프로필렌글라이콜모노메틸에터아세테이트(PGMEA), 프로필렌글라이콜모노에틸에터아세테이트, 프로필렌글라이콜모노프로필에터아세테이트 등, 및, 케톤류로서, 예를 들면, 메틸에틸케톤, 사이클로헥산온, 사이클로펜탄온, 2-헵탄온, 3-헵탄온, N-메틸-2-피롤리돈 등, 및, 환상 탄화 수소류로서, 예를 들면, 톨루엔, 자일렌, 아니솔 등의 방향족 탄화 수소류, 리모넨 등의 환식 터펜류, 설폭사이드류로서, 다이메틸설폭사이드, 및, 알코올류로서, 메탄올, 에탄올, 프로판올, 아이소프로판올, 뷰탄올, 펜탄올, 옥탄올, 다이에틸렌글라이콜, 프로필렌글라이콜, 메틸아이소뷰틸카비놀, 트라이에틸렌글라이콜 등, 및, 아마이드류로서, N-메틸피롤리돈, N-에틸피롤리돈, 다이메틸폼아마이드 등을 적합하게 들 수 있다.The organic solvent is esters, for example, ethyl acetate, n-butyl acetate, amyl formate, isoamyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate , ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone, alkyloxyacetic acid (e.g. methyl alkyloxyacetate, ethyl alkyloxyacetate, butyl alkyloxyacetate (e.g. methoxyacetic acid) methyl, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.)), 3-alkyloxypropionate alkyl esters (eg: 3-alkyloxymethylpropionate, 3-alkyloxyethylpropionate, etc.) (e.g., 3-methoxymethylpropionate, 3-methoxyethylpropionate, 3-ethoxymethylpropionate, 3-ethoxyethylpropionate, etc.), 2-alkyloxypropionate alkyl esters (e.g., 2-alkyl Methyl oxypropionate, ethyl 2-alkyloxypropionate, propyl 2-alkyloxypropionate, etc. (e.g., methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate , 2-ethoxyethylpropionate)), 2-alkyloxy-2-methylmethylpropionate and 2-alkyloxy-2-methylethylpropionate (e.g., 2-methoxy-2-methylmethylpropionate, ethyl oxy-2-methylpropionate, etc.), methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetoacetate, ethyl acetoacetate, methyl 2-oxobutanoate, ethyl 2-oxobutanoate, etc., and as ethers, for example For example, diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol Col monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA) , propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, and the like, and as ketones, for example, ethyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, N-methyl-2-pyrrolidone, etc., and as cyclic hydrocarbons, for example, toluene, xylene, Aromatic hydrocarbons such as anisole, cyclic terpenes such as limonene, dimethyl sulfoxide as sulfoxides, and methanol, ethanol, propanol, isopropanol, butanol, pentanol, octanol as alcohols, diethylene glycol, propylene glycol, methyl isobutyl carbinol, triethylene glycol, etc., and, as amides, N-methylpyrrolidone, N-ethylpyrrolidone, dimethylformamide, etc. can be suitably
현상액이 유기 용제를 포함하는 경우, 유기 용제는 1종 또는, 2종 이상을 혼합하여 사용할 수 있다. 본 발명에서는 특히 사이클로펜탄온, γ-뷰티로락톤, 다이메틸설폭사이드, N-메틸-2-피롤리돈, 및, 사이클로헥산온으로 이루어지는 군으로부터 선택된 적어도 1종을 포함하는 현상액이 바람직하고, 사이클로펜탄온, γ-뷰티로락톤 및 다이메틸설폭사이드로 이루어지는 군으로부터 선택된 적어도 1종을 포함하는 현상액이 보다 바람직하며, 사이클로펜탄온을 포함하는 현상액이 가장 바람직하다.When the developing solution contains an organic solvent, the organic solvent can be used alone or in combination of two or more. In the present invention, a developer containing at least one selected from the group consisting of cyclopentanone, γ-butyrolactone, dimethyl sulfoxide, N-methyl-2-pyrrolidone, and cyclohexanone is particularly preferred. A developing solution containing at least one selected from the group consisting of cyclopentanone, γ-butyrolactone and dimethyl sulfoxide is more preferable, and a developing solution containing cyclopentanone is most preferable.
현상액은, 다른 성분을 더 포함해도 된다.The developing solution may further contain other components.
다른 성분으로서는, 예를 들면, 공지의 계면활성제나 공지의 소포제 등을 들 수 있다.As another component, a well-known surfactant, a well-known antifoaming agent, etc. are mentioned, for example.
〔현상액의 공급 방법〕[Supply Method of Developer]
현상액의 공급 방법은, 원하는 패턴을 형성할 수 있으면 특별히 제한은 없으며, 막이 형성된 기재를 현상액에 침지하는 방법, 기재 상에 형성된 막에 노즐을 이용하여 현상액을 공급하는 퍼들 현상, 또는, 현상액을 연속 공급하는 방법이 있다. 노즐의 종류는 특별히 제한은 없으며, 스트레이트 노즐, 샤워 노즐, 스프레이 노즐 등을 들 수 있다.The method of supplying the developer is not particularly limited as long as a desired pattern can be formed. A method of immersing a film-formed substrate in a developer, a puddle phenomenon in which a developer is supplied to a film formed on a substrate using a nozzle, or a developer is continuously applied. There is a way to supply. The type of nozzle is not particularly limited, and examples thereof include straight nozzles, shower nozzles, and spray nozzles.
현상액의 침투성, 비화상부의 제거성, 제조상의 효율의 관점에서, 현상액을 스트레이트 노즐로 공급하는 방법, 또는 스프레이 노즐로 연속 공급하는 방법이 바람직하고, 화상부에 대한 현상액의 침투성의 관점에서는, 스프레이 노즐로 공급하는 방법이 보다 바람직하다.From the viewpoints of penetrability of the developer, removability of the non-image portion, and manufacturing efficiency, a method of supplying the developer through a straight nozzle or a method of continuously supplying the developer through a spray nozzle is preferable, and from the viewpoint of penetrability of the developer into the image portion, the spray The method of supplying with a nozzle is more preferable.
또, 현상액을 스트레이트 노즐로 연속 공급 후, 기재를 스핀하여 현상액을 기재 상으로부터 제거하고, 스핀 건조 후에 재차 스트레이트 노즐로 연속 공급 후, 기재를 스핀하여 현상액을 기재 상으로부터 제거하는 공정을 채용해도 되며, 이 공정을 복수 회 반복해도 된다.Alternatively, after continuously supplying the developing solution with a straight nozzle, the base material is spun to remove the developing solution from the base material, and after spin drying, a step of continuously supplying the developing solution with the straight nozzle again and then spinning the base material to remove the developing solution from the base material may be employed. , You may repeat this process multiple times.
또 현상 공정에 있어서의 현상액의 공급 방법으로서는, 현상액이 연속적으로 기재에 계속 공급되는 공정, 기재 상에서 현상액이 대략 정지 상태에서 유지되는 공정, 기재 상에서 현상액을 초음파 등으로 진동시키는 공정 및 그들을 조합한 공정 등이 채용 가능하다.Further, as a method for supplying the developing solution in the developing step, a step in which the developing solution is continuously supplied to the substrate, a step in which the developing solution is maintained on the substrate in a substantially stationary state, a step in which the developing solution is vibrated on the substrate with ultrasonic waves or the like, and a process in which they are combined. etc. can be employed.
현상 시간으로서는, 10초~10분간이 바람직하고, 20초~5분간이 보다 바람직하다. 현상 시의 현상액의 온도는, 특별히 정하는 것은 아니지만, 바람직하게는, 10~45℃, 보다 바람직하게는, 18℃~30℃에서 행할 수 있다.As development time, 10 second - 10 minutes are preferable and 20 second - 5 minutes are more preferable. The temperature of the developing solution at the time of development is not particularly determined, but is preferably 10 to 45°C, more preferably 18°C to 30°C.
현상 공정에 있어서, 현상액을 이용한 처리 후, 린스액에 의한 패턴의 세정(린스)을 더 행해도 된다. 또, 패턴 상에 접하는 현상액이 완전히 건조되지 않는 동안에 린스액을 공급하는 등의 방법을 채용해도 된다.In the developing step, after the treatment using the developing solution, the pattern may be further washed (rinsed) with a rinsing solution. Moreover, you may employ|adopt the method of supplying a rinsing liquid while the developing solution which touches on a pattern is not completely dry.
〔린스액〕[rinse liquid]
현상액이 알칼리 수용액인 경우, 린스액으로서는, 예를 들면 물을 이용할 수 있다. 현상액이 유기 용제를 포함하는 현상액인 경우, 린스액으로서는, 예를 들면, 현상액에 포함되는 용제와는 상이한 용제(예를 들면, 물, 현상액에 포함되는 유기 용제와는 상이한 유기 용제)를 이용할 수 있다.When the developing solution is an aqueous alkali solution, water can be used as a rinse solution, for example. When the developing solution is a developing solution containing an organic solvent, for example, a solvent different from the solvent contained in the developing solution (eg, water, an organic solvent different from the organic solvent contained in the developing solution) can be used as the rinsing solution. there is.
린스액이 유기 용제를 포함하는 경우의 유기 용제로서는, 에스터류로서, 예를 들면, 아세트산 에틸, 아세트산-n-뷰틸, 폼산 아밀, 아세트산 아이소아밀, 아세트산 아이소뷰틸, 프로피온산 뷰틸, 뷰티르산 아이소프로필, 뷰티르산 에틸, 뷰티르산 뷰틸, 락트산 메틸, 락트산 에틸, γ-뷰티로락톤, ε-카프로락톤, δ-발레로락톤, 알킬옥시아세트산 알킬(예: 알킬옥시아세트산 메틸, 알킬옥시아세트산 에틸, 알킬옥시아세트산 뷰틸(예를 들면, 메톡시아세트산 메틸, 메톡시아세트산 에틸, 메톡시아세트산 뷰틸, 에톡시아세트산 메틸, 에톡시아세트산 에틸 등)), 3-알킬옥시프로피온산 알킬에스터류(예: 3-알킬옥시프로피온산 메틸, 3-알킬옥시프로피온산 에틸 등(예를 들면, 3-메톡시프로피온산 메틸, 3-메톡시프로피온산 에틸, 3-에톡시프로피온산 메틸, 3-에톡시프로피온산 에틸 등)), 2-알킬옥시프로피온산 알킬에스터류(예: 2-알킬옥시프로피온산 메틸, 2-알킬옥시프로피온산 에틸, 2-알킬옥시프로피온산 프로필 등(예를 들면, 2-메톡시프로피온산 메틸, 2-메톡시프로피온산 에틸, 2-메톡시프로피온산 프로필, 2-에톡시프로피온산 메틸, 2-에톡시프로피온산 에틸)), 2-알킬옥시-2-메틸프로피온산 메틸 및 2-알킬옥시-2-메틸프로피온산 에틸(예를 들면, 2-메톡시-2-메틸프로피온산 메틸, 2-에톡시-2-메틸프로피온산 에틸 등), 피루브산 메틸, 피루브산 에틸, 피루브산 프로필, 아세토아세트산 메틸, 아세토아세트산 에틸, 2-옥소뷰탄산 메틸, 2-옥소뷰탄산 에틸 등, 및, 에터류로서, 예를 들면, 다이에틸렌글라이콜다이메틸에터, 테트라하이드로퓨란, 에틸렌글라이콜모노메틸에터, 에틸렌글라이콜모노에틸에터, 메틸셀로솔브아세테이트, 에틸셀로솔브아세테이트, 다이에틸렌글라이콜모노메틸에터, 다이에틸렌글라이콜모노에틸에터, 다이에틸렌글라이콜모노뷰틸에터, 프로필렌글라이콜모노메틸에터(PGME), 프로필렌글라이콜모노메틸에터아세테이트(PGMEA), 프로필렌글라이콜모노에틸에터아세테이트, 프로필렌글라이콜모노프로필에터아세테이트 등, 및, 케톤류로서, 예를 들면, 메틸에틸케톤, 사이클로헥산온, 사이클로펜탄온, 2-헵탄온, 3-헵탄온, N-메틸-2-피롤리돈 등, 및, 환상 탄화 수소류로서, 예를 들면, 톨루엔, 자일렌, 아니솔 등의 방향족 탄화 수소류, 리모넨 등의 환식 터펜류, 설폭사이드류로서 다이메틸설폭사이드, 및, 알코올류로서, 메탄올, 에탄올, 프로판올, 아이소프로판올, 뷰탄올, 펜탄올, 옥탄올, 다이에틸렌글라이콜, 프로필렌글라이콜, 메틸아이소뷰틸카비놀, 트라이에틸렌글라이콜 등, 및, 아마이드류로서, N-메틸피롤리돈, N-에틸피롤리돈, 다이메틸폼아마이드 등을 적합하게 들 수 있다.Examples of the organic solvent in case the rinse liquid contains an organic solvent include esters such as ethyl acetate, n-butyl acetate, amyl formate, isoamyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, Ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone, alkyloxyacetate (e.g., methyl alkyloxyacetate, ethyl alkyloxyacetate, alkyloxy butyl acetate (e.g. methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.), 3-alkyloxypropionic acid alkyl esters (e.g. 3-alkyloxy Methyl propionate, 3-alkyloxyethylpropionate, etc. (eg, 3-methoxymethylpropionate, 3-methoxyethylpropionate, 3-ethoxymethylpropionate, 3-ethoxyethylpropionate, etc.), 2-alkyloxy Alkyl esters of propionic acid (e.g., 2-alkyloxymethylpropionate, 2-alkyloxyethylpropionate, 2-alkyloxypropylpropionate, etc. (e.g., 2-methoxymethylpropionate, 2-methoxyethylpropionate, 2-methoxypropionate, Propyl oxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate)), 2-alkyloxy-2-methylmethylpropionate and 2-alkyloxy-2-methylethylpropionate (e.g. 2-methoxy -2-methylmethylpropionate, 2-ethoxy-2-methylethylpropionate, etc.), methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetoacetate, ethyl acetoacetate, methyl 2-oxobutanoate, ethyl 2-oxobutanoate etc., and, as ethers, for example, diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, Ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether (PGME), propylene glycol Lycol Monomethyl Ether Acetate (PGMEA), Propylene Glycol Monoethyl Ether Acetate, Propylene Glycol Monopropyl Ether Acetate etc., and as ketones, for example, methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, N-methyl-2-pyrrolidone, etc., and cyclic carbonized water Examples of the element include aromatic hydrocarbons such as toluene, xylene, and anisole, cyclic terpenes such as limonene, dimethyl sulfoxide as sulfoxides, and methanol, ethanol, propanol, and alcohols as alcohols. isopropanol, butanol, pentanol, octanol, diethylene glycol, propylene glycol, methyl isobutyl carbinol, triethylene glycol, etc., and, as amides, N-methylpyrrolidone, N- Ethylpyrrolidone, dimethylformamide, etc. are mentioned suitably.
린스액이 유기 용제를 포함하는 경우, 유기 용제는 1종 또는, 2종 이상을 혼합하여 사용할 수 있다. 본 발명에서는 특히 사이클로펜탄온, γ-뷰티로락톤, 다이메틸설폭사이드, N-메틸피롤리돈, 사이클로헥산온, PGMEA, PGME가 바람직하고, 사이클로펜탄온, γ-뷰티로락톤, 다이메틸설폭사이드, PGMEA, PGME가 보다 바람직하며, 사이클로헥산온, PGMEA가 더 바람직하다.When the rinse liquid contains an organic solvent, the organic solvent can be used alone or in combination of two or more. In the present invention, cyclopentanone, γ-butyrolactone, dimethylsulfoxide, N-methylpyrrolidone, cyclohexanone, PGMEA, and PGME are particularly preferred, and cyclopentanone, γ-butyrolactone, dimethylsulfoxide Side, PGMEA, and PGME are more preferable, and cyclohexanone and PGMEA are still more preferable.
린스액이 유기 용제를 포함하는 경우, 린스액은, 50질량% 이상이 유기 용제인 것이 바람직하고, 70질량% 이상이 유기 용제인 것이 보다 바람직하며, 90질량% 이상이 유기 용제인 것이 더 바람직하다. 또, 린스액은, 100질량%가 유기 용제여도 된다.When the rinsing liquid contains an organic solvent, the rinsing liquid preferably contains 50% by mass or more of an organic solvent, more preferably 70% by mass or more of an organic solvent, and more preferably 90% by mass or more of an organic solvent do. Moreover, 100 mass % of the rinse liquid may be an organic solvent.
린스액은, 다른 성분을 더 포함해도 된다.The rinse liquid may further contain other components.
다른 성분으로서는, 예를 들면, 공지의 계면활성제나 공지의 소포제 등을 들 수 있다.As another component, a well-known surfactant, a well-known antifoaming agent, etc. are mentioned, for example.
〔린스액의 공급 방법〕[How to supply rinse liquid]
린스액의 공급 방법은, 원하는 패턴을 형성할 수 있으면 특별히 제한은 없고, 기재를 린스액에 침지하는 방법, 기재 상에서의 퍼들 현상, 기재에 린스액을 샤워로 공급하는 방법, 기재 상에 스트레이트 노즐 등의 수단에 의하여 현상액을 연속 공급하는 방법이 있다.The method of supplying the rinsing liquid is not particularly limited as long as a desired pattern can be formed, and a method of immersing the substrate in the rinsing liquid, a puddle phenomenon on the substrate, a method of supplying the rinsing liquid to the substrate with a shower, and a straight nozzle on the substrate There is a method of continuously supplying a developing solution by such means.
린스액의 침투성, 비화상부의 제거성, 제조상의 효율의 관점에서, 린스액을 샤워 노즐, 스트레이트 노즐, 스프레이 노즐 등으로 공급하는 방법이 있으며, 스프레이 노즐로 연속 공급하는 방법이 바람직하고, 화상부에 대한 린스액의 침투성의 관점에서는, 스프레이 노즐로 공급하는 방법이 보다 바람직하다. 노즐의 종류는 특별히 제한은 없으며, 스트레이트 노즐, 샤워 노즐, 스프레이 노즐 등을 들 수 있다.From the viewpoint of permeability of the rinse liquid, removability of the non-image area, and manufacturing efficiency, there is a method of supplying the rinse liquid to a shower nozzle, a straight nozzle, a spray nozzle, etc., and a method of continuously supplying the rinse liquid to the spray nozzle is preferable, and the image area From the viewpoint of permeability of the rinsing liquid to the water, a method of supplying through a spray nozzle is more preferable. The type of nozzle is not particularly limited, and examples thereof include straight nozzles, shower nozzles, and spray nozzles.
즉, 린스 공정은, 린스액을 상기 노광 후의 막에 대하여 스트레이트 노즐에 의하여 공급, 또는, 연속 공급하는 공정인 것이 바람직하고, 린스액을 스프레이 노즐에 의하여 공급하는 공정인 것이 보다 바람직하다.That is, the rinsing step is preferably a step of supplying a rinsing liquid to the film after exposure through a straight nozzle or continuously supplying the rinsing liquid to the film after exposure, and more preferably a process of supplying the rinsing liquid through a spray nozzle.
또 린스 공정에 있어서의 린스액의 공급 방법으로서는, 린스액이 연속적으로 기재에 계속 공급되는 공정, 기재 상에서 린스액이 대략 정지 상태에서 유지되는 공정, 기재 상에서 린스액을 초음파 등으로 진동시키는 공정 및 그들을 조합한 공정 등이 채용 가능하다.Further, as a method for supplying the rinsing liquid in the rinsing step, a process in which the rinsing liquid is continuously supplied to the substrate, a process in which the rinsing liquid is maintained on the substrate in a substantially stationary state, a process in which the rinsing liquid is vibrated on the substrate with ultrasonic waves, and A process or the like combining them is employable.
린스 시간으로서는, 10초~10분간이 바람직하고, 20초~5분간이 보다 바람직하다. 린스 시의 린스액의 온도는, 특별히 정하는 것은 아니지만, 바람직하게는, 10~45℃, 보다 바람직하게는, 18℃~30℃에서 행할 수 있다.As rinse time, 10 seconds - 10 minutes are preferable, and 20 seconds - 5 minutes are more preferable. The temperature of the rinsing liquid at the time of rinsing is not particularly determined, but is preferably 10 to 45°C, more preferably 18°C to 30°C.
<변성 공정><denaturation process>
본 발명의 경화물의 제조 방법은, 상기 패턴(현상 공정에 의하여 얻어진 패턴)을 변성시키는 변성 공정을 포함한다.The method for producing a cured product of the present invention includes a modification step of modifying the pattern (pattern obtained by the developing step).
변성 공정은, 상기 패턴 내에서 상기 폴리이미드 전구체의 이미드화를 행하는 공정인 것이 바람직하다.It is preferable that a modification|denaturation process is a process of imidating the said polyimide precursor within the said pattern.
또, 변성 공정에 있어서, 상기 패턴의 가열이 행해지는 것이 바람직하다.Further, in the denaturation step, it is preferable that the pattern is heated.
즉, 변성 공정은, 가열에 의하여 상기 패턴 내에서 상기 폴리이미드 전구체의 이미드화를 행하는 공정인 것이 바람직하다.That is, it is preferable that a modification|denaturation process is a process of performing imidation of the said polyimide precursor within the said pattern by heating.
가열은, 하기 가열 공정에 기재된 방법에 의하여 행하는 것이 바람직하다.It is preferable to perform heating by the method described in the following heating process.
<가열 공정><Heating process>
현상 공정에 의하여 얻어진 패턴(린스 공정을 행하는 경우는, 린스 후의 패턴)은, 상기 현상에 의하여 얻어진 패턴을 가열하는 가열 공정에 제공되어도 된다.The pattern obtained by the developing step (pattern after rinsing in the case of performing the rinsing step) may be subjected to a heating step of heating the pattern obtained by the above development.
즉, 본 발명의 경화물의 제조 방법은, 현상 공정에 의하여 얻어진 패턴을 가열하는 가열 공정을 포함해도 된다.That is, the manufacturing method of the hardened|cured material of this invention may also include the heating process of heating the pattern obtained by the image development process.
또, 본 발명의 경화물의 제조 방법은, 현상 공정을 행하지 않고 다른 방법으로 얻어진 패턴, 또는, 막 형성 공정에 의하여 얻어진 막을 가열하는 가열 공정을 포함해도 된다.Further, the method for producing a cured product of the present invention may include a heating step of heating a pattern obtained by another method or a film obtained by the film forming step without performing the developing step.
가열 공정에 있어서, 폴리이미드 전구체 등의 수지는 환화되어 폴리이미드 등의 수지가 된다.In the heating step, resins such as polyimide precursors are cyclized to become resins such as polyimide.
또, 특정 수지, 또는 특정 수지 이외의 가교제에 있어서의 미반응의 가교성기의 가교 등도 진행된다.Further, crosslinking of unreacted crosslinkable groups in specific resins or crosslinking agents other than specific resins also proceeds.
가열 공정에 있어서의 가열 온도(최고 가열 온도)로서는, 50~450℃가 바람직하고, 150~350℃가 보다 바람직하며, 150~250℃가 더 바람직하고, 160~250℃가 한층 바람직하며, 160~230℃가 특히 바람직하다.The heating temperature (maximum heating temperature) in the heating step is preferably 50 to 450 ° C, more preferably 150 to 350 ° C, still more preferably 150 to 250 ° C, still more preferably 160 to 250 ° C, 160 ° C ~230°C is particularly preferred.
가열 공정에 있어서의 가열은, 가열 개시 시의 온도부터 최고 가열 온도까지 1~12℃/분의 승온 속도로 행하는 것이 바람직하다. 상기 승온 속도는 2~10℃/분이 보다 바람직하며, 3~10℃/분이 더 바람직하다. 승온 속도를 1℃/분 이상으로 함으로써, 생산성을 확보하면서, 산 또는 용제의 과잉된 휘발을 방지할 수 있고, 승온 속도를 12℃/분 이하로 함으로써, 경화물의 잔존 응력을 완화할 수 있다.The heating in the heating step is preferably performed at a temperature rising rate of 1 to 12°C/min from the temperature at the start of heating to the highest heating temperature. The temperature increase rate is more preferably 2 to 10°C/minute, more preferably 3 to 10°C/minute. By setting the temperature increase rate to 1 ° C./min or more, excessive volatilization of the acid or solvent can be prevented while securing productivity, and by setting the temperature increase rate to 12 ° C./min or less, residual stress of the cured product can be relaxed.
또한, 급속 가열 가능한 오븐의 경우, 가열 개시 시의 온도부터 최고 가열 온도까지 1~8℃/초의 승온 속도로 행하는 것이 바람직하고, 2~7℃/초가 보다 바람직하며, 3~6℃/초가 더 바람직하다.Further, in the case of an oven capable of rapid heating, heating is performed at a heating rate of 1 to 8°C/sec from the temperature at the start of heating to the maximum heating temperature, more preferably 2 to 7°C/sec, and even more preferably 3 to 6°C/sec. desirable.
가열 개시 시의 온도는, 20℃~150℃가 바람직하고, 20℃~130℃가 보다 바람직하며, 25℃~120℃가 더 바람직하다. 가열 개시 시의 온도는, 최고 가열 온도까지 가열하는 공정을 개시할 때의 온도를 말한다. 예를 들면, 본 발명의 수지 조성물을 기재 상에 적용한 후, 건조시키는 경우, 이 건조 후의 막(층)의 온도이며, 예를 들면, 본 발명의 수지 조성물에 포함되는 용제의 비점보다, 30~200℃ 낮은 온도부터 승온시키는 것이 바람직하다.The temperature at the start of heating is preferably 20°C to 150°C, more preferably 20°C to 130°C, still more preferably 25°C to 120°C. The temperature at the start of heating refers to the temperature at the time of starting the process of heating to the highest heating temperature. For example, when the resin composition of the present invention is applied on a substrate and then dried, the temperature of the film (layer) after this drying is, for example, 30 to higher than the boiling point of the solvent contained in the resin composition of the present invention. It is preferable to raise the temperature from a temperature as low as 200°C.
가열 시간(최고 가열 온도에서의 가열 시간)은, 5~360분인 것이 바람직하고, 10~300분인 것이 보다 바람직하며, 15~240분인 것이 더 바람직하다.The heating time (heating time at the highest heating temperature) is preferably 5 to 360 minutes, more preferably 10 to 300 minutes, and still more preferably 15 to 240 minutes.
특히 다층의 적층체를 형성하는 경우, 층간의 밀착성의 관점에서, 가열 온도는 30℃ 이상인 것이 바람직하고, 80℃ 이상인 것이 보다 바람직하며, 100℃ 이상인 것이 더 바람직하고, 120℃ 이상인 것이 특히 바람직하다.In particular, in the case of forming a multilayer laminate, the heating temperature is preferably 30°C or higher, more preferably 80°C or higher, still more preferably 100°C or higher, and particularly preferably 120°C or higher, from the viewpoint of adhesion between layers. .
상기 가열 온도의 상한은, 350℃ 이하인 것이 바람직하고, 250℃ 이하인 것이 보다 바람직하며, 240℃ 이하인 것이 더 바람직하다.The upper limit of the heating temperature is preferably 350°C or lower, more preferably 250°C or lower, and still more preferably 240°C or lower.
가열은 단계적으로 행해도 된다. 예로서, 25℃부터 120℃까지 3℃/분으로 승온하고, 120℃에서 60분 유지하며, 120℃부터 180℃까지 2℃/분으로 승온하고, 180℃에서 120분 유지하는 것과 같은 공정을 행해도 된다. 또, 미국 특허공보 제9159547호에 기재된 바와 같이 자외선을 조사하면서 처리하는 것도 바람직하다. 이와 같은 전처리 공정에 의하여 막의 특성을 향상시키는 것이 가능하다. 전처리 공정은 10초간~2시간 정도의 짧은 시간으로 행하면 되고, 15초~30분간이 보다 바람직하다. 전처리는 2단계 이상의 스텝으로 해도 되고, 예를 들면 100~150℃의 범위에서 1단계째의 전처리 공정을 행하고, 그 후에 150~200℃의 범위에서 2단계째의 전처리 공정를 행해도 된다.Heating may be performed stepwise. As an example, a process such as raising the temperature from 25 ° C to 120 ° C at 3 ° C / min, holding at 120 ° C for 60 minutes, raising the temperature from 120 ° C to 180 ° C at 2 ° C / min and holding at 180 ° C for 120 minutes You can do it. Moreover, it is also preferable to process while irradiating an ultraviolet-ray as described in US Patent Publication No. 9159547. It is possible to improve the properties of the film by such a pretreatment process. What is necessary is just to perform a pretreatment process in a short time of about 10 second - about 2 hours, and 15 second - 30 minutes are more preferable. The pretreatment may be carried out in two or more stages, for example, a first stage pretreatment step may be performed in the range of 100 to 150 ° C., followed by a second stage pretreatment step in the range of 150 to 200 ° C.
또한, 가열 후 냉각해도 되고, 이 경우의 냉각 속도로서는, 1~5℃/분인 것이 바람직하다.Moreover, you may cool after heating, and as a cooling rate in this case, it is preferable that it is 1-5 degrees C/min.
가열 공정은, 질소, 헬륨, 아르곤 등의 불활성 가스를 흘려보내거나, 감압하에서 행하는 등에 의하여, 저산소 농도의 분위기에서 행하는 것이 특정 수지의 분해를 방지하는 점에서 바람직하다. 산소 농도는, 50ppm(체적비) 이하가 바람직하고, 20ppm(체적비) 이하가 보다 바람직하다.The heating step is preferably carried out in an atmosphere of low oxygen concentration by flowing an inert gas such as nitrogen, helium, or argon or under reduced pressure to prevent decomposition of the specific resin. The oxygen concentration is preferably 50 ppm (volume ratio) or less, and more preferably 20 ppm (volume ratio) or less.
가열 공정에 있어서의 가열 수단으로서는, 특별히 한정되지 않지만, 예를 들면 핫플레이트, 적외로(赤外爐), 전열식 오븐, 열풍식 오븐, 적외선 오븐 등을 들 수 있다.Although it does not specifically limit as a heating means in a heating process, For example, a hot plate, an infrared furnace, an electrothermal oven, a hot air oven, an infrared oven, etc. are mentioned.
<현상 후 노광 공정><Exposure process after development>
현상 공정에 의하여 얻어진 패턴(린스 공정을 행하는 경우는, 린스 후의 패턴)은, 상기 가열 공정에 더하여, 현상 공정 후의 패턴을 노광하는 현상 후 노광 공정에 제공되어도 된다.The pattern obtained by the developing step (pattern after rinsing in the case of performing the rinsing step) may be subjected to a post-development exposure step of exposing the pattern after the developing step to light in addition to the heating step.
즉, 본 발명의 경화물의 제조 방법은, 현상 공정에 의하여 얻어진 패턴을 노광하는 현상 후 노광 공정을 포함해도 된다. 본 발명의 경화물의 제조 방법은, 가열 공정 및 현상 후 노광 공정을 포함해도 되고, 가열 공정 및 현상 후 노광 공정의 일방만을 포함해도 된다.That is, the method for producing a cured product of the present invention may also include a post-development exposure step of exposing the pattern obtained by the developing step. The method for producing a cured product of the present invention may include a heating step and a post-development exposure step, or may include only one of the heating step and the post-development exposure step.
현상 후 노광 공정에 있어서는, 예를 들면, 광염기 발생제의 감광에 의하여 폴리이미드 전구체 등의 환화가 진행되는 반응이나, 광산발생제의 감광에 의하여 산분해성기의 탈리가 진행되는 반응 등을 촉진시킬 수 있다.In the post-development exposure step, for example, a reaction in which cyclization of a polyimide precursor or the like proceeds by photosensitization of a photobase generator, a reaction in which acid-decomposable groups are desorbed by photosensitization of a photoacid generator, etc. are promoted. can make it
현상 후 노광 공정에 있어서는, 현상 공정에 있어서 얻어진 패턴의 적어도 일부가 노광되면 되지만, 상기 패턴의 전부가 노광되는 것이 바람직하다.In the post-development exposure process, at least a part of the pattern obtained in the development process may be exposed, but it is preferable that all of the patterns are exposed.
현상 후 노광 공정에 있어서의 노광량은, 감광성 화합물이 감도를 갖는 파장에 있어서의 노광 에너지 환산으로, 50~20,000mJ/cm2인 것이 바람직하고, 100~15,000mJ/cm2인 것이 보다 바람직하다.The exposure amount in the post-development exposure step is preferably 50 to 20,000 mJ/cm 2 , more preferably 100 to 15,000 mJ/cm 2 in terms of exposure energy at a wavelength at which the photosensitive compound has sensitivity.
현상 후 노광 공정은, 예를 들면, 상술한 노광 공정에 있어서의 광원을 이용하여 행할 수 있으며, 브로드밴드 광을 이용하는 것이 바람직하다.The post-development exposure process can be performed using, for example, the light source in the exposure process described above, and broadband light is preferably used.
<금속층 형성 공정><Metal layer formation process>
현상 공정에 의하여 얻어진 패턴(가열 공정 및 노광 후 현상 공정 중 적어도 일방에 제공된 것이 바람직하다)은, 패턴 상에 금속층을 형성하는 금속층 형성 공정에 제공되어도 된다.The pattern obtained by the developing step (preferably provided in at least one of the heating step and the post-exposure developing step) may be subjected to a metal layer forming step of forming a metal layer on the pattern.
즉, 본 발명의 경화물의 제조 방법은, 현상 공정에 의하여 얻어진 패턴(가열 공정에 제공된 것이 바람직하다) 상에 금속층을 형성하는 금속층 형성 공정을 포함하는 것이 바람직하다.That is, the method for producing a cured product of the present invention preferably includes a metal layer forming step of forming a metal layer on a pattern (preferably applied to a heating step) obtained by the developing step.
금속층으로서는, 특별히 한정 없이, 기존의 금속종을 사용할 수 있으며, 구리, 알루미늄, 니켈, 바나듐, 타이타늄, 크로뮴, 코발트, 금, 텅스텐, 주석, 은 및 이들 금속을 포함하는 합금이 예시되고, 구리 및 알루미늄이 보다 바람직하며, 구리가 더 바람직하다.As the metal layer, existing metal species can be used without particular limitation, and copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, tungsten, tin, silver, and alloys containing these metals are exemplified, and copper and Aluminum is more preferred, and copper is more preferred.
금속층의 형성 방법은, 특별히 한정 없이, 기존의 방법을 적용할 수 있다. 예를 들면, 일본 공개특허공보 2007-157879호, 일본 공표특허공보 2001-521288호, 일본 공개특허공보 2004-214501호, 일본 공개특허공보 2004-101850호, 미국 특허공보 제7888181B2, 미국 특허공보 제9177926B2에 기재된 방법을 사용할 수 있다. 예를 들면, 포토리소그래피, PVD(물리 증착법), CVD(화학 기상 성장법), 리프트 오프, 전해 도금, 무전해 도금, 에칭, 인쇄, 및 이들을 조합한 방법 등이 생각된다. 보다 구체적으로는, 스퍼터링, 포토리소그래피 및 에칭을 조합한 패터닝 방법, 포토리소그래피와 전해 도금을 조합한 패터닝 방법을 들 수 있다. 도금의 바람직한 양태로서는, 황산 구리나 사이안화 구리 도금액을 이용한 전해 도금을 들 수 있다.The method of forming the metal layer is not particularly limited, and an existing method can be applied. For example, Japanese Unexamined Patent Publication No. 2007-157879, Japanese Publication No. 2001-521288, Japanese Unexamined Patent Publication No. 2004-214501, Japanese Unexamined Patent Publication No. 2004-101850, US Patent Publication No. 7888181B2, US Patent Publication No. The method described in 9177926B2 can be used. For example, photolithography, PVD (Physical Vapor Deposition), CVD (Chemical Vapor Deposition), lift-off, electroplating, electroless plating, etching, printing, methods combining these, and the like can be considered. More specifically, a patterning method in which sputtering, photolithography and etching are combined, and a patterning method in which photolithography and electrolytic plating are combined are exemplified. As a preferable aspect of plating, electrolytic plating using a copper sulfate or copper cyanide plating solution is exemplified.
금속층의 두께로서는, 가장 후육(厚肉)의 부분에서, 0.01~50μm가 바람직하고, 1~10μm가 보다 바람직하다.The thickness of the metal layer is preferably 0.01 μm to 50 μm, and more preferably 1 μm to 10 μm in the thickest part.
<용도><Use>
본 발명의 경화물의 제조 방법, 또는, 본 발명의 경화물의 적용 가능한 분야로서는, 전자 디바이스의 절연막, 재배선층용 층간 절연막, 스트레스 버퍼막 등을 들 수 있다. 그 외에, 밀봉 필름, 기판 재료(플렉시블 프린트 기판의 베이스 필름이나 커버 레이, 층간 절연막), 또는 상기와 같은 실장 용도의 절연막을 에칭으로 패턴 형성하는 것 등을 들 수 있다. 이들 용도에 대해서는, 예를 들면, 사이언스 & 테크놀로지(주) "폴리이미드의 고기능화와 응용 기술" 2008년 4월, 가키모토 마사아키/감수, CMC 테크니컬 라이브러리 "폴리이미드 재료의 기초와 개발" 2011년 11월 발행, 일본 폴리이미드·방향족계 고분자 연구회/편 "최신 폴리이미드 기초와 응용" 엔·티·에스, 2010년 8월 등을 참조할 수 있다.Examples of the manufacturing method of the cured product of the present invention or applicable fields of the cured product of the present invention include insulating films for electronic devices, interlayer insulating films for redistribution layers, and stress buffer films. In addition, pattern formation of a sealing film, a substrate material (a base film or cover lay of a flexible printed circuit board, an interlayer insulating film), or an insulating film for mounting use as described above by etching may be used. Regarding these applications, for example, Science & Technology Co., Ltd. "Highly functional polyimide and application technology" April 2008, Masaaki Kakimoto/Supervisor, CMC Technical Library "Basics and development of polyimide materials" November 2011 Monthly publication, Japanese Polyimide/Aromatic Polymer Research Society/edition "Latest Polyimide Basics and Applications" N.T.S., August 2010, etc. can be referenced.
또, 본 발명의 경화물의 제조 방법, 또는, 본 발명의 경화물은, 오프셋 판면 또는 스크린 판면 등의 판면의 제조, 성형 부품의 에칭으로의 사용, 일렉트로닉스, 특히, 마이크로일렉트로닉스에 있어서의 보호 래커 및 유전층의 제조 등에도 이용할 수도 있다.In addition, the production method of the cured product of the present invention or the cured product of the present invention is used for producing a plate surface such as an offset plate surface or a screen plate surface, for use in etching of molded parts, in electronics, in particular, as a protective lacquer in microelectronics, and It can also be used for production of dielectric layers and the like.
또, 본 발명의 경화물의 제조 방법에 의하여 얻어지는 경화물의 막두께는, 예를 들면, 경화물의 절연성 등의 관점에서, 5μm 이상인 것이 바람직하고, 10μm 이상이 보다 바람직하며, 15μm 이상이 보다 바람직하고, 20μm 이상이 특히 바람직하다. 상기 막두께의 상한은 특별히 한정되지 않지만, 예를 들면, 50μm 이하로 할 수 있다.Further, the film thickness of the cured product obtained by the method for producing a cured product of the present invention is preferably 5 μm or more, more preferably 10 μm or more, and more preferably 15 μm or more, from the viewpoint of, for example, the insulating property of the cured product, 20 μm or more is particularly preferred. Although the upper limit of the said film thickness is not specifically limited, For example, it can be 50 micrometers or less.
본 발명의 경화물의 제조 방법에 의하면, 이와 같은 비교적 막두께가 두꺼운 경우이더라도 해상성이 우수한 경화물을 제조할 수 있다.According to the method for producing a cured product of the present invention, a cured product having excellent resolution can be produced even when the film thickness is relatively thick.
(적층체, 및, 적층체의 제조 방법)(Laminate and manufacturing method of the laminate)
본 발명의 적층체란, 본 발명의 경화물로 이루어지는 층을 복수 층 갖는 구조체를 말한다.The laminate of the present invention refers to a structure having a plurality of layers comprising a cured product of the present invention.
본 발명의 적층체는, 경화물로 이루어지는 층을 2층 이상 포함하는 적층체이며, 3층 이상 적층한 적층체로 해도 된다.The laminate of the present invention is a laminate comprising two or more layers of cured material, and may be a laminate of three or more layers.
상기 적층체에 포함되는 2층 이상의 상기 경화물로 이루어지는 층 중, 적어도 하나가 본 발명의 경화물로 이루어지는 층이며, 경화물의 수축, 또는, 상기 수축에 따른 경화물의 변형 등을 억제하는 관점에서는, 상기 적층체에 포함되는 모든 경화물로 이루어지는 층이 본 발명의 경화물로 이루어지는 층인 것도 바람직하다.At least one of the two or more layers of the cured material included in the laminate is a layer made of the cured material of the present invention, and from the viewpoint of suppressing shrinkage of the cured material or deformation of the cured material due to the shrinkage, It is also preferable that all the layers made of the cured material included in the laminate are layers made of the cured material of the present invention.
즉, 본 발명의 적층체의 제조 방법은, 본 발명의 경화물의 제조 방법을 포함하는 것이 바람직하고, 본 발명의 경화물의 제조 방법을 복수 회 반복하는 것을 포함하는 것이 보다 바람직하다.That is, the manufacturing method of the laminate of the present invention preferably includes the manufacturing method of the cured product of the present invention, and more preferably includes repeating the manufacturing method of the cured product of the present invention a plurality of times.
본 발명의 적층체는, 경화물로 이루어지는 층을 2층 이상 포함하고, 상기 경화물로 이루어지는 층끼리 중 어느 하나의 사이에 금속층을 포함하는 양태가 바람직하다. 상기 금속층은, 상기 금속층 형성 공정에 의하여 형성되는 것이 바람직하다.It is preferable that the layered product of the present invention includes two or more layers of layers made of a cured product and includes a metal layer between any one of the layers made of the cured product. It is preferable that the said metal layer is formed by the said metal layer formation process.
즉, 본 발명의 적층체의 제조 방법은, 복수 회 행해지는 경화물의 제조 방법의 사이에, 경화물로 이루어지는 층 상에 금속층을 형성하는 금속층 형성 공정을 더 포함하는 것이 바람직하다. 금속층 형성 공정의 바람직한 양태는 상술한 바와 같다.That is, it is preferable that the manufacturing method of the laminated body of this invention further includes the metal layer formation process of forming a metal layer on the layer which consists of hardened|cured material between the manufacturing method of hardened|cured material performed multiple times. Preferred aspects of the metal layer forming process are as described above.
상기 적층체로서는, 예를 들면, 제1 경화물로 이루어지는 층, 금속층, 제2 경화물로 이루어지는 층의 3개의 층이 이 순서로 적층된 층 구조를 적어도 포함하는 적층체를 바람직한 것으로서 들 수 있다.As the above-mentioned laminate, a laminate containing at least a layered structure in which three layers, for example, a layer made of a first cured material, a metal layer, and a layer made of a second cured material are laminated in this order, is mentioned as a preferable one. .
상기 제1 경화물로 이루어지는 층 및 상기 제2 경화물로 이루어지는 층은, 모두 본 발명의 경화물로 이루어지는 층인 것이 바람직하다. 상기 제1 경화물로 이루어지는 층의 형성에 이용되는 본 발명의 수지 조성물과, 상기 제2 경화물로 이루어지는 층의 형성에 이용되는 본 발명의 수지 조성물은, 조성이 동일한 조성물이어도 되고, 조성이 상이한 조성물이어도 된다. 본 발명의 적층체에 있어서의 금속층은, 재배선층 등의 금속 배선으로서 바람직하게 이용된다.It is preferable that both the layer composed of the first cured material and the layer composed of the second cured material are layers made of the cured material of the present invention. The resin composition of the present invention used for forming the layer composed of the first cured material and the resin composition of the present invention used for forming the layer composed of the second cured material may be compositions having the same composition or different in composition. It may be a composition. The metal layer in the laminate of the present invention is preferably used as metal wiring such as a redistribution layer.
<적층 공정><Laminating process>
본 발명의 적층체의 제조 방법은, 적층 공정을 포함하는 것이 바람직하다.It is preferable that the manufacturing method of the laminated body of this invention includes a lamination process.
적층 공정이란, 패턴(수지층) 또는 금속층의 표면에, 재차, (a) 막 형성 공정(층 형성 공정), (b) 노광 공정, (c) 현상 공정, (d) 가열 공정을, 이 순서로 행하는 것을 포함하는 일련의 공정이다. 단, (a)의 막 형성 공정 및 (d) 가열 공정을 반복하는 양태여도 된다. 또, (d) 가열 공정 후에는 (e) 금속층 형성 공정을 포함해도 된다. 적층 공정에는, 상기 건조 공정 등을 적절히 더 포함하고 있어도 되는 것은 말할 필요도 없다.The lamination step is, on the surface of the pattern (resin layer) or metal layer, (a) film formation step (layer formation step), (b) exposure step, (c) developing step, and (d) heating step in this order. It is a series of steps including performing with However, an aspect in which the film formation step of (a) and the heating step (d) are repeated may be used. Moreover, you may include (e) metal layer formation process after (d) heating process. It goes without saying that the above drying step or the like may be appropriately further included in the lamination step.
적층 공정 후, 추가로 적층 공정을 행하는 경우에는, 상기 노광 공정 후, 상기 가열 공정 후, 또는, 상기 금속층 형성 공정 후에, 표면 활성화 처리 공정을 더 행해도 된다. 표면 활성화 처리로서는, 플라즈마 처리가 예시된다. 표면 활성화 처리의 상세에 대해서는 후술한다.When the lamination process is further performed after the lamination process, a surface activation treatment process may be further performed after the exposure process, the heating process, or the metal layer forming process. As the surface activation treatment, plasma treatment is exemplified. Details of the surface activation treatment will be described later.
상기 적층 공정은, 2~20회 행하는 것이 바람직하고, 2~9회 행하는 것이 보다 바람직하다.It is preferable to perform the said lamination process 2 to 20 times, and it is more preferable to perform it 2 to 9 times.
예를 들면, 수지층/금속층/수지층/금속층/수지층/금속층과 같이, 수지층을 2층 이상 20층 이하로 하는 구성이 바람직하고, 2층 이상 9층 이하로 하는 구성이 더 바람직하다.For example, a resin layer/metal layer/resin layer/metal layer/resin layer/metal layer is preferably composed of 2 or more layers and 20 or less layers, and more preferably 2 or more layers and 9 or less layers. .
상기 각층은 각각, 조성, 형상, 막두께 등이 동일해도 되고, 상이해도 된다.Each of the above layers may be the same or different in composition, shape, film thickness, and the like.
본 발명에서는 특히, 금속층을 마련한 후, 상기 금속층을 덮도록, 상기 본 발명의 수지 조성물의 경화물(수지층)을 더 형성하는 양태가 바람직하다. 구체적으로는, (a) 막 형성 공정, (b) 노광 공정, (c) 현상 공정, (d) 가열 공정, (e) 금속층 형성 공정의 순서로 반복하는 양태, 또는, (a) 막 형성 공정, (d) 가열 공정, (e) 금속층 형성 공정의 순서로 반복하는 양태를 들 수 있다. 본 발명의 수지 조성물층(수지층)을 적층하는 적층 공정과, 금속층 형성 공정을 번갈아 행함으로써, 본 발명의 수지 조성물층(수지층)과 금속층을 번갈아 적층할 수 있다.In this invention, after providing a metal layer especially, the aspect which further forms the hardened|cured material (resin layer) of the said resin composition of this invention so that the said metal layer may be covered is preferable. Specifically, (a) film formation process, (b) exposure process, (c) development process, (d) heating process, (e) metal layer formation process, or (a) film formation process , (d) a heating step, and (e) an aspect of repeating the metal layer forming step in this order. By alternately performing the lamination step of laminating the resin composition layer (resin layer) of the present invention and the metal layer forming step, the resin composition layer (resin layer) of the present invention and the metal layer can be laminated alternately.
(표면 활성화 처리 공정)(Surface activation treatment process)
본 발명의 적층체의 제조 방법은, 상기 금속층 및 수지 조성물층의 적어도 일부를 표면 활성화 처리하는, 표면 활성화 처리 공정을 포함하는 것이 바람직하다.The method for producing a laminate of the present invention preferably includes a surface activation treatment step of subjecting at least a part of the metal layer and the resin composition layer to a surface activation treatment.
표면 활성화 처리 공정은, 통상, 금속층 형성 공정 후에 행하지만, 상기 가열 공정 후, 수지 조성물층에 표면 활성화 처리 공정을 행하고 나서, 금속층 형성 공정을 행해도 된다.The surface activation treatment step is usually performed after the metal layer formation step, but the metal layer formation step may be performed after performing the surface activation treatment step on the resin composition layer after the heating step.
표면 활성화 처리는, 금속층의 적어도 일부에만 행해도 되고, 가열 후의 수지 조성물층의 적어도 일부에만 행해도 되며, 금속층 및 가열 후의 수지 조성물층의 양방에 대하여, 각각, 적어도 일부에 행해도 된다. 표면 활성화 처리는, 금속층의 적어도 일부에 대하여 행하는 것이 바람직하고, 금속층 중, 표면에 수지 조성물층을 형성하는 영역의 일부 또는 전부에 표면 활성화 처리를 행하는 것이 바람직하다. 이와 같이, 금속층의 표면에 표면 활성화 처리를 행함으로써, 그 표면에 마련되는 수지 조성물층(막)과의 밀착성을 향상시킬 수 있다.The surface activation treatment may be performed on at least a portion of the metal layer, at least a portion of the resin composition layer after heating, or on at least a portion of both the metal layer and the resin composition layer after heating. The surface activation treatment is preferably performed on at least a part of the metal layer, and it is preferable to perform the surface activation treatment on a part or all of the region where the resin composition layer is formed on the surface of the metal layer. In this way, by performing surface activation treatment on the surface of the metal layer, adhesion to the resin composition layer (film) provided on the surface can be improved.
또, 표면 활성화 처리는, 노광 후의 수지 조성물층(수지층)의 일부 또는 전부에 대해서도 행하는 것이 바람직하다. 이와 같이, 수지 조성물층의 표면에 표면 활성화 처리를 행함으로써, 표면 활성화 처리한 표면에 마련되는 금속층이나 수지층과의 밀착성을 향상시킬 수 있다. 특히 네거티브형 현상을 행하는 경우 등, 수지 조성물층이 경화되어 있는 경우에는, 표면 처리에 의한 대미지를 받기 어려워, 밀착성이 향상되기 쉽다.In addition, it is preferable to perform the surface activation treatment also on a part or all of the resin composition layer (resin layer) after exposure. In this way, by subjecting the surface of the resin composition layer to surface activation treatment, adhesion to the metal layer or resin layer provided on the surface of the surface activation treatment can be improved. In particular, when the resin composition layer is cured, such as in the case of negative development, it is difficult to receive damage by surface treatment and the adhesion is easy to improve.
표면 활성화 처리로서는, 구체적으로는, 각종 원료 가스(산소, 수소, 아르곤, 질소, 질소/수소 혼합 가스, 아르곤/산소 혼합 가스 등)의 플라즈마 처리, 코로나 방전 처리, CF4/O2, NF3/O2, SF6, NF3, NF3/O2에 의한 에칭 처리, 자외선(UV) 오존법에 의한 표면 처리, 염산 수용액에 침지하여 산화 피막을 제거한 후에 아미노기와 싸이올기를 적어도 1종 갖는 화합물을 포함하는 유기 표면 처리제에 대한 침지 처리, 브러시를 이용한 기계적인 조면화 처리로부터 선택되며, 플라즈마 처리가 바람직하고, 특히 원료 가스에 산소를 이용한 산소 플라즈마 처리가 바람직하다. 코로나 방전 처리의 경우, 에너지는, 500~200,000J/m2가 바람직하고, 1000~100,000J/m2가 보다 바람직하며, 10,000~50,000J/m2가 가장 바람직하다.As the surface activation treatment, specifically, plasma treatment of various source gases (oxygen, hydrogen, argon, nitrogen, nitrogen/hydrogen mixture gas, argon/oxygen mixture gas, etc.), corona discharge treatment, CF 4 /O 2 , NF 3 /O 2 , SF 6 , NF 3 , NF 3 After etching treatment by /O 2 , surface treatment by ultraviolet (UV) ozone method, and immersion in an aqueous hydrochloric acid solution to remove the oxide film, having at least one amino group and thiol group It is selected from an immersion treatment for an organic surface treatment agent containing a compound and a mechanical roughening treatment using a brush, and a plasma treatment is preferred, and an oxygen plasma treatment using oxygen as a raw material gas is particularly preferred. In the case of corona discharge treatment, the energy is preferably 500 to 200,000 J/m 2 , more preferably 1000 to 100,000 J/m 2 , and most preferably 10,000 to 50,000 J/m 2 .
(전자 디바이스의 제조 방법)(Method of manufacturing electronic device)
본 발명은, 본 발명의 경화물의 제조 방법, 또는, 본 발명의 적층체의 제조 방법을 포함하는 반도체 디바이스의 제조 방법도 개시한다. 본 발명의 수지 조성물을 재배선층용 층간 절연막의 형성에 이용한 반도체 디바이스의 구체예로서는, 일본 공개특허공보 2016-027357호의 단락 0213~0218의 기재 및 도 1의 기재를 참조할 수 있으며, 이들 내용은 본 명세서에 원용된다.The present invention also discloses a method for manufacturing a semiconductor device including the method for manufacturing a cured product of the present invention or the method for manufacturing a laminate of the present invention. As a specific example of a semiconductor device using the resin composition of the present invention for forming an interlayer insulating film for a redistribution layer, the description of paragraphs 0213 to 0218 and the description of FIG. incorporated into the specification.
(수지 조성물)(resin composition)
본 발명의 수지 조성물은, 본 발명의 경화물의 제조 방법에 있어서 이용되는 수지 조성물이다.The resin composition of the present invention is a resin composition used in the method for producing a cured product of the present invention.
본 발명의 수지 조성물은, 수지, 활성광선 또는 방사선의 조사에 의하여 산을 발생하는 화합물, 및, 용제를 포함하고, 상기 수지는 폴리이미드 전구체이며, 상기 수지는 산의 작용에 의하여 극성이 증대되는 반응을 발생하는 기를 갖는다.The resin composition of the present invention includes a resin, a compound that generates an acid by irradiation with actinic light or radiation, and a solvent, the resin is a polyimide precursor, and the resin has increased polarity by the action of an acid. It has a group that causes a reaction.
이하, 본 발명의 수지 조성물에 포함되는, 각 성분의 상세에 대하여 설명한다.Hereinafter, details of each component included in the resin composition of the present invention will be described.
<수지><Suzy>
수지 조성물은, 폴리이미드 전구체이며, 산의 작용에 의하여 극성이 증대되는 반응을 발생하는 기(극성 변환기)를 갖는 수지를 포함한다.The resin composition is a polyimide precursor and contains a resin having a group (polarity converter) that generates a reaction in which polarity is increased by the action of an acid.
극성 변환기로서는, 산분해성기를 들 수 있으며, 산의 작용에 의하여 분해되어 알칼리 가용성기를 발생하는 기가 바람직하다.Examples of the polarity converter include acid decomposable groups, and groups that are decomposed by the action of acid to generate alkali-soluble groups are preferable.
산분해성기로서는, 아세탈기, 실릴기, 실릴에터기, 제3급 알킬에스터기 등을 들 수 있으며, 아세탈기, 또는, 제3급 알킬에스터기가 바람직하고, 노광 감도의 관점에서는, 아세탈기가 보다 바람직하다.Examples of the acid decomposable group include an acetal group, a silyl group, a silyl ether group, a tertiary alkyl ester group, and the like, and an acetal group or a tertiary alkyl ester group is preferable. From the viewpoint of exposure sensitivity, the acetal group is more desirable.
이들 중에서도, 극성 변환기는, 하기 식 (A-1) 또는 하기 식 (A-2)로 나타나는 기인 것이 바람직하다.Among these, the polarity converter is preferably a group represented by the following formula (A-1) or the following formula (A-2).
[화학식 3][Formula 3]
식 (A-1) 중, RA1~RA5는 각각 독립적으로, 수소 원자 또는 1가의 유기기를 나타내고, RA1~RA5 중 적어도 2개가 결합하여 환 구조를 형성하고 있어도 되며, *는 다른 구조와의 결합 부위를 나타낸다;In formula (A-1), R A1 to R A5 each independently represent a hydrogen atom or a monovalent organic group, and at least two of R A1 to R A5 may be bonded to form a ring structure, and * indicates another structure indicates a binding site with;
식 (A-2) 중, RA6~RA8은 각각 독립적으로, 1가의 유기기를 나타내고, RA6~RA8 중 적어도 2개가 결합하여 환 구조를 형성하고 있어도 되며, *는 다른 구조와의 결합 부위를 나타낸다.In formula (A-2), R A6 to R A8 each independently represent a monovalent organic group, and at least two of R A6 to R A8 may be bonded to form a ring structure, and * is a bond with another structure. indicates the area.
식 (A-1) 중, RA1 및 RA2는 각각 독립적으로, 수소 원자 또는 1가의 유기기를 나타내고, 수소 원자 또는 1가의 탄화 수소기가 바람직하다. 1가의 탄화 수소기로서는, 지방족 탄화 수소기, 방향족 다가 수소기, 또는 이들의 결합에 의하여 나타나는 기 중 어느 것이어도 되지만, 지방족 탄화 수소기, 또는, 지방족 탄화 수소기 및 방향족 탄화 수소기의 결합에 의하여 나타나는 기인 것이 바람직하고, 포화 지방족 탄화 수소기, 또는, 포화 지방족 탄화 수소기 및 방향족 탄화 수소기의 결합에 의하여 나타나는 기인 것이 바람직하다.In Formula (A-1), R A1 and R A2 each independently represent a hydrogen atom or a monovalent organic group, and a hydrogen atom or a monovalent hydrocarbon group is preferable. The monovalent hydrocarbon group may be any of an aliphatic hydrocarbon group, an aromatic polyhydric hydrogen group, or a group formed by a bond thereof, but a bond between an aliphatic hydrocarbon group and an aliphatic hydrocarbon group and an aromatic hydrocarbon group may be used. is preferably a group represented by, and a group represented by a saturated aliphatic hydrocarbon group or a bond between a saturated aliphatic hydrocarbon group and an aromatic hydrocarbon group is preferred.
식 (A-1) 중, RA3~RA5는 각각 독립적으로, 수소 원자 또는 1가의 유기기를 나타내고, 수소 원자 또는 1가의 탄화 수소기가 바람직하며, 수소 원자가 보다 바람직하다.In formula (A-1), R A3 to R A5 each independently represent a hydrogen atom or a monovalent organic group, preferably a hydrogen atom or a monovalent hydrocarbon group, more preferably a hydrogen atom.
또, 식 (A-1) 중, RA1~RA5 중 적어도 2개가 결합하여 환 구조를 형성하는 경우, RA1 및 RA2 중 적어도 일방과, RA3~RA5 중 적어도 1개가 결합하여 환 구조를 형성하는 것이 바람직하다. 형성되는 환 구조로서는, 테트라하이드로퓨란환 등을 들 수 있다.Further, in formula (A-1), when at least two of R A1 to R A5 are bonded to form a ring structure, at least one of R A1 and R A2 and at least one of R A3 to R A5 are bonded to form a ring structure. It is desirable to form a structure. As a ring structure formed, a tetrahydrofuran ring etc. are mentioned.
식 (A-2) 중, RA6~RA8은 각각 독립적으로, 1가의 유기기를 나타내고, 1가의 탄화 수소기를 나타내는 것이 바람직하며, 탄소수 1~10의 1가의 탄화 수소기를 나타내는 것이 보다 바람직하고, 탄소수 1~4의 1가의 탄화 수소기를 나타내는 것이 더 바람직하며, 탄소수 1~4의 알킬기를 나타내는 것이 특히 바람직하다.In formula (A-2), R A6 to R A8 each independently represent a monovalent organic group, preferably a monovalent hydrocarbon group, and more preferably a monovalent hydrocarbon group having 1 to 10 carbon atoms; It is more preferable to represent a monovalent hydrocarbon group of 1 to 4 carbon atoms, and it is particularly preferable to represent an alkyl group of 1 to 4 carbon atoms.
RA6~RA8 중 적어도 2개가 결합하여 환 구조를 형성하는 경우, 환 구조로서는 특별히 한정되지 않지만, 지방족 탄화 수소환 구조인 것이 바람직하고, 포화 지방족 탄화 수소환 구조인 것이 보다 바람직하다.When at least two of R A6 to R A8 are bonded to form a ring structure, the ring structure is not particularly limited, but is preferably an aliphatic hydrocarbon ring structure, more preferably a saturated aliphatic hydrocarbon ring structure.
〔폴리이미드 전구체〕[Polyimide precursor]
본 발명에서 이용하는 폴리이미드 전구체는, 하기 식 (1)로 나타나는 반복 단위를 포함하는 것이 바람직하다.It is preferable that the polyimide precursor used by this invention contains the repeating unit represented by following formula (1).
[화학식 4][Formula 4]
상기 식 (1) 중,In the above formula (1),
R1은, 4가의 유기기를 나타낸다. 복수의 R1은 서로 동일해도 되고 상이해도 된다.R 1 represents a tetravalent organic group. A plurality of R 1 's may be the same as or different from each other.
R2는, 2가의 유기기를 나타낸다. 복수의 R2는 서로 동일해도 되고 상이해도 된다.R 2 represents a divalent organic group. A plurality of R 2 may be the same as or different from each other.
R3은, 각각 독립적으로, 수소 원자 또는 유기기를 나타낸다.R 3 each independently represents a hydrogen atom or an organic group.
식 (1)로 나타나는 반복 단위는, 극성 변환기를 포함하는 것이 바람직하고, 식 (1)에 있어서의 복수의 -CO2R3 중 적어도 하나는, 극성 변환기를 포함하는 기인 것이 보다 바람직하며, 식 (1)에 있어서의 복수의 -CO2R3 중 적어도 하나는, 산의 작용에 의하여 분해되어 알칼리 가용성기를 발생하는 기인 것이 더 바람직하다.The repeating unit represented by Formula (1) preferably contains a polarity converter, and more preferably, at least one of the plurality of -CO 2 R 3 in Formula (1) is a group containing a polarity converter, It is more preferable that at least one of the plurality of -CO 2 R 3 in (1) is a group that decomposes under the action of an acid to generate an alkali-soluble group.
또, 상기 식 (1)로 나타나는 반복 단위가, 상술한 식 (A-1) 또는 식 (A-2)로 나타나는 기를 포함하는 것이 바람직하다.Moreover, it is preferable that the repeating unit represented by the said formula (1) contains the group represented by the formula (A-1) or formula (A-2) mentioned above.
식 (1)로 나타나는 반복 단위가, 상술한 식 (A-1)로 나타나는 기를 포함하는 경우, 식 (1) 중의 R3이 하기 식 (A'-1)로 나타나는 기임으로써, 식 (1)로 나타나는 반복 단위가, 상술한 식 (A-1)로 나타나는 기를 포함하는 것이 바람직하다.When the repeating unit represented by formula (1) contains a group represented by formula (A-1) described above, R 3 in formula (1) is a group represented by formula (A′-1) below, and formula (1) It is preferable that the repeating unit represented by contains the group represented by the above formula (A-1).
또, 식 (1)로 나타나는 반복 단위가, 상술한 식 (A-2)로 나타나는 기를 포함하는 경우, 식 (1) 중 R3이 하기 식 (A'-2)임으로써, 식 (1)로 나타나는 반복 단위가, 상술한 식 (A-2)로 나타나는 기를 포함하는 것이 바람직하다.Moreover, when the repeating unit represented by Formula (1) contains the group represented by Formula (A-2) mentioned above, by R3 being the following formula (A'-2) in Formula (1), Formula (1) It is preferable that the repeating unit represented by contains the group represented by the above formula (A-2).
[화학식 5][Formula 5]
식 (A'-1) 중, RA1~RA5는 각각, 식 (A-1) 중의 RA1~RA5와 동일한 의미이며, 바람직한 양태도 동일하다. 또, *는 식 (1) 중의 R3이 결합하는 산소 원자와의 결합 부위를 나타낸다.In the formula (A′-1), R A1 to R A5 each have the same meaning as R A1 to R A5 in the formula (A-1), and preferred embodiments are also the same. In addition, * represents a bonding site to an oxygen atom to which R 3 in formula (1) bonds.
식 (A'-2) 중, RA6~RA8은 각각, 식 (A-2) 중의 RA6~RA8과 동일한 의미이며, 바람직한 양태도 동일하다. 또, *는 식 (1) 중의 R3이 결합하는 산소 원자와의 결합 부위를 나타낸다.In the formula (A′-2), R A6 to R A8 each have the same meaning as R A6 to R A8 in the formula (A-2), and the preferred embodiments are also the same. In addition, * represents a bonding site to an oxygen atom to which R 3 in formula (1) bonds.
식 (1)로 나타나는 반복 단위를 갖는 수지는, 산의 작용에 의하여 알칼리 현상액에 대한 용해도가 증대되는 수지이다. 식 (1)의 반복 단위를 갖는 수지는, 바람직하게는 알칼리 현상액에 불용 또는 난용성이다.A resin having a repeating unit represented by formula (1) is a resin whose solubility in an alkaline developing solution is increased by the action of an acid. The resin having the repeating unit of Formula (1) is preferably insoluble or sparingly soluble in an alkali developing solution.
식 (1)로 나타나는 반복 단위는, R1을 핵으로 하여 4개의 카복시기를 갖는 화합물, 그 카복실산 무수물, 또는 상기 4개의 카복시기 중 적어도 1개에 있어서의 수소 원자가 산의 작용에 의하여 탈리하는 기로 치환되어 이루어지는 화합물에서 유래하는 산성분과, R2를 핵으로 하여 2개의 아미노기를 갖는 화합물에서 유래하는 다이아민 성분으로 구성된다. 환언하면, 식 (1) 중의 2개의 카보닐기 사이에 끼워진 상기 2개의 카보닐기를 포함하는 부분 구조인 산성분과, 식 (1) 중의 -NH-R2-NH-로 나타나는 부분 구조인 다이아민 성분으로 구성된다.The repeating unit represented by formula (1) is a compound having four carboxy groups with R 1 as a nucleus, a carboxylic acid anhydride, or a group from which hydrogen atoms in at least one of the four carboxy groups are eliminated by the action of an acid. It is composed of an acid component derived from a substituted compound and a diamine component derived from a compound having two amino groups with R 2 as a nucleus. In other words, the acid component as a partial structure containing the two carbonyl groups interposed between the two carbonyl groups in Formula (1) and the diamine component as a partial structure represented by -NH-R 2 -NH- in Formula (1) It consists of
4가의 유기기 R1로서는, 탄소수 4~30인 것이 바람직하고, 단환식 또는 축합 다환식의 지방족기 또는 방향족기를 갖는 4가의 연결기인 것이 보다 바람직하다. 복수의 R1은 서로 동일해도 되고 상이해도 된다.The tetravalent organic group R 1 preferably has 4 to 30 carbon atoms, and is more preferably a tetravalent linking group having a monocyclic or condensed polycyclic aliphatic or aromatic group. A plurality of R 1 's may be the same as or different from each other.
4가의 유기기 R1에 있어서의 단환식의 방향족기로서는, 벤젠환기, 피리딘환기 등을 들 수 있다.Examples of the monocyclic aromatic group in the tetravalent organic group R 1 include a benzene ring group and a pyridine ring group.
4가의 유기기 R1에 있어서의 축합 다환식의 방향족기로서는, 나프탈렌환기, 페릴렌환기 등을 들 수 있다.Examples of the condensed polycyclic aromatic group in the tetravalent organic group R 1 include a naphthalene ring group and a perylene ring group.
4가의 유기기 R1에 있어서의 단환식의 지방족기로서는, 사이클로뷰테인환기, 사이클로펜테인환기, 사이클로헥세인환기 등을 들 수 있다.Examples of the monocyclic aliphatic group in the tetravalent organic group R 1 include a cyclobutane ring group, a cyclopentane ring group, and a cyclohexane ring group.
4가의 유기기 R1에 있어서의 축합 다환식의 지방족기로서는, 바이사이클로[2.2.1]헵테인환기, 바이사이클로[2.2.2]옥테인환기, 바이사이클로[2.2.2]옥트-7-엔환기 등을 들 수 있다.Examples of the condensed polycyclic aliphatic group in the tetravalent organic group R 1 include a bicyclo[2.2.1]heptane ring group, a bicyclo[2.2.2]octane ring group, and a bicyclo[2.2.2]oct-7- En ventilation, etc. are mentioned.
4가의 유기기 R1에 대한 단환식 또는 축합 다환식의 지방족기 또는 방향족기를 갖는 4가의 연결기로서는, 상술한 단환식 또는 축합 다환식의 지방족기 또는 방향족기 자체여도 되지만, 복수의 단환식 또는 축합 다환식의 지방족기 또는 방향족기가 단결합 내지는 2가의 연결기를 개재하여 연결되어, R1로서의 4가의 연결기를 형성하고 있어도 된다.The tetravalent linking group having a monocyclic or fused polycyclic aliphatic or aromatic group for the tetravalent organic group R 1 may be the above-mentioned monocyclic or fused polycyclic aliphatic or aromatic group itself, but may be a plurality of monocyclic or condensed polycyclic aliphatic or aromatic groups. Polycyclic aliphatic or aromatic groups may be linked via a single bond or a divalent linking group to form a tetravalent linking group as R 1 .
상기 2가의 연결기로서는, 알킬렌기(탄소수 1~6의 알킬렌기가 바람직하고, 예를 들면, 메틸렌기, 에틸렌기, 프로필렌기 등), 산소 원자, 황 원자, 2가의 설폰기, 에스터 결합, 케톤기, 아마이드기 등을 들 수 있다.As the divalent linking group, an alkylene group (preferably an alkylene group having 1 to 6 carbon atoms, for example, a methylene group, an ethylene group, a propylene group, etc.), an oxygen atom, a sulfur atom, a divalent sulfone group, an ester bond, a ketone Group, amide group, etc. are mentioned.
R1을 핵으로 하여 적어도 4개의 카복시기에서 유래하는 기를 갖는 산성분의 구체예로서는, 파이로멜리트산 무수물, 3,3',4,4'-바이페닐테트라카복실산 무수물, 2,3,3',4'-바이페닐테트라카복실산 무수물, 2,2',3,3'-바이페닐테트라카복실산 무수물, 3,3',4,4'-벤조페논테트라카복실산 무수물, 2,2',3,3'-벤조페논테트라카복실산 무수물, 4,4'-(헥사플루오로아이소프로필리덴) 이프탈산 무수물, 1,2,5,6-나프탈렌테트라카복실산 무수물, 2,3,6,7-나프탈렌테트라카복실산 무수물, 2,3,5,6-피리딘테트라카복실산 무수물, 3,4,9,10-페릴렌테트라카복실산 무수물, (트라이플루오로메틸)파이로멜리트산 무수물, 다이(트라이플루오로메틸)파이로멜리트산 무수물, 다이(헵타플루오로프로필)파이로멜리트산 무수물, 펜타플루오로에틸파이로멜리트산 무수물, 비스〔3,5-다이(트라이플루오로메틸)페녹시〕파이로멜리트산 무수물, 3,3',4,4'-테트라카복시다이페닐에터 이무수물, 2,3',3,4'-테트라카복시다이페닐에터 이무수물, 3,3',4,4'-테트라카복시다이페닐메테인 이무수물, 3,3',4,4'-테트라카복시다이페닐설폰 이무수물, 2,2-비스(3,4-다이카복시페닐)프로페인 이무수물, 2,2-비스(3,4-다이카복시페닐)헥사플루오로프로페인 이무수물, 5,5'-비스(트라이플루오로메틸)-3,3',4,4'-테트라카복시바이페닐 이무수물, 2,2',5,5'-테트라키스(트라이플루오로메틸)-3,3',4,4'-테트라카복시바이페닐 이무수물, 5,5'-비스(트라이플루오로메틸)-3,3',4,4'-테트라카복시다이페닐에터 이무수물, 5,5'-비스(트라이플루오로메틸)-3,3',4,4'-테트라카복시벤조페논 이무수물, 비스〔(트라이플루오로메틸) 다이카복시페녹시〕벤젠 이무수물, 비스(다이카복시페녹시)비스(트라이플루오로메틸)벤젠 이무수물, 비스(다이카복시페녹시)테트라키스(트라이플루오로메틸)벤젠 이무수물, 2,2-비스〔4-(3,4-다이카복시페녹시)페닐〕프로페인 이무수물, 2,2-비스(4-(3,4-다이카복시페녹시)페닐)헥사플루오로프로페인 이무수물, 5,5'-[p-페닐렌비스(옥시카보닐)]다이 무수 프탈산 등의 방향족 테트라카복실산 무수물에서 유래하는 성분이나, 사이클로뷰테인테트라카복실산 무수물, 사이클로펜테인테트라카복실산 무수물, 사이클로헥세인테트라카복실산 무수물, 1,2,4,5-사이클로헥세인테트라카복실산, 바이사이클로[2.2.1]헵테인-2,3,5,6-테트라카복실산, 바이사이클로[2.2.2]옥테인-2,3,5,6-테트라카복실산, 또는 바이사이클로[2.2.2]옥트-7-엔-2,3,5,6-테트라카복실산, 바이사이클로[2.2.2]옥테인-2,3,5,6-테트라카복실산 이무수물, (1S,2S,4R,5R)-사이클로헥세인테트라카복실산 이무수물, (1R,2S,4S,5R)-사이클로헥세인테트라카복실산 이무수물 등의 지방족 테트라카복실산 무수물에서 유래하는 성분 등을 들 수 있다.Specific examples of the acid component having R 1 as a nucleus and groups derived from at least four carboxyl groups include pyromellitic anhydride, 3,3',4,4'-biphenyltetracarboxylic anhydride, and 2,3,3'. ,4'-biphenyltetracarboxylic acid anhydride, 2,2',3,3'-biphenyltetracarboxylic acid anhydride, 3,3',4,4'-benzophenonetetracarboxylic acid anhydride, 2,2',3,3 '-benzophenonetetracarboxylic anhydride, 4,4'-(hexafluoroisopropylidene) iphthalic anhydride, 1,2,5,6-naphthalenetetracarboxylic anhydride, 2,3,6,7-naphthalenetetracarboxylic anhydride , 2,3,5,6-pyridinetetracarboxylic acid anhydride, 3,4,9,10-perylenetetracarboxylic acid anhydride, (trifluoromethyl) pyromellitic anhydride, di(trifluoromethyl)pyromellitic acid acid anhydride, di(heptafluoropropyl)pyromellitic anhydride, pentafluoroethylpyromellitic anhydride, bis[3,5-di(trifluoromethyl)phenoxy]pyromellitic anhydride, 3, 3',4,4'-tetracarboxydiphenyl ether dianhydride, 2,3',3,4'-tetracarboxydiphenyl ether dianhydride, 3,3',4,4'-tetracarboxydiphenyl Methane dianhydride, 3,3',4,4'-tetracarboxydiphenylsulfone dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2-bis(3, 4-dicarboxyphenyl) hexafluoropropane dianhydride, 5,5'-bis(trifluoromethyl)-3,3',4,4'-tetracarboxybiphenyl dianhydride, 2,2',5 ,5'-tetrakis(trifluoromethyl)-3,3',4,4'-tetracarboxybiphenyl dianhydride, 5,5'-bis(trifluoromethyl)-3,3',4, 4'-tetracarboxydiphenylether dianhydride, 5,5'-bis(trifluoromethyl)-3,3',4,4'-tetracarboxybenzophenone dianhydride, bis[(trifluoromethyl) Dicarboxyphenoxy] benzene dianhydride, bis (dicarboxyphenoxy) bis (trifluoromethyl) benzene dianhydride, bis (dicarboxyphenoxy) tetrakis (trifluoromethyl) benzene dianhydride, 2,2- Bis[4-(3,4-dicarboxyphenoxy)phenyl]propane dianhydride, 2,2-bis(4-(3,4-dica Components derived from aromatic tetracarboxylic acid anhydrides such as boxyphenoxy)phenyl)hexafluoropropane dianhydride, 5,5'-[p-phenylenebis(oxycarbonyl)]diphthalic anhydride, and cyclobutanetetra carboxylic acid anhydride, cyclopentanetetracarboxylic acid anhydride, cyclohexanetetracarboxylic acid anhydride, 1,2,4,5-cyclohexanetetracarboxylic acid, bicyclo[2.2.1]heptane-2,3,5,6-tetra Carboxylic acid, bicyclo[2.2.2]octane-2,3,5,6-tetracarboxylic acid, or bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid, bicyclo [2.2.2] Octane-2,3,5,6-tetracarboxylic dianhydride, (1S,2S,4R,5R)-cyclohexanetetracarboxylic dianhydride, (1R,2S,4S,5R)-cyclo and components derived from aliphatic tetracarboxylic acid anhydrides such as hexanetetracarboxylic acid dianhydride.
바람직하게는, 파이로멜리트산 무수물에서 유래하는 성분, 3,3',4,4'-바이페닐테트라카복실산 무수물에서 유래하는 성분, 2,3,3',4'-바이페닐테트라카복실산 무수물에서 유래하는 성분, 2,2',3,3'-바이페닐테트라카복실산 무수물에서 유래하는 성분, 3,3',4,4'-벤조페논테트라카복실산 무수물에서 유래하는 성분, 4,4'-(헥사플루오로아이소프로필리덴) 이프탈산 무수물에서 유래하는 성분, 3,3',4,4'-테트라카복시다이페닐에터 이무수물에서 유래하는 성분, 1,2,5,6-나프탈렌테트라카복실산 무수물에서 유래하는 성분, 5,5'-[p-페닐렌비스(옥시카보닐)]다이 무수 프탈산에서 유래하는 성분, 사이클로뷰테인테트라카복실산 무수물에서 유래하는 성분, 사이클로펜테인테트라카복실산 무수물에서 유래하는 성분, 바이사이클로[2.2.2]옥테인-2,3,5,6-테트라카복실산 이무수물에서 유래하는 성분, (1S,2S,4R,5R)-사이클로헥세인테트라카복실산 이무수물에서 유래하는 성분, (1R,2S,4S,5R)-사이클로헥세인테트라카복실산 이무수물에서 유래하는 성분이며, 보다 바람직하게는 파이로멜리트산 무수물에서 유래하는 성분, 3,3',4,4'-바이페닐테트라카복실산 무수물에서 유래하는 성분, 4,4'-(헥사플루오로아이소프로필리덴) 이프탈산 무수물에서 유래하는 성분, 사이클로뷰테인테트라카복실산 무수물에서 유래하는 성분, 3,3',4,4'-테트라카복시다이페닐에터 이무수물에서 유래하는 성분, 사이클로펜테인테트라카복실산 무수물에서 유래하는 성분, 5,5'-[p-페닐렌비스(옥시카보닐)]다이 무수 프탈산에서 유래하는 성분, (1S,2S,4R,5R)-사이클로헥세인테트라카복실산 이무수물에서 유래하는 성분, (1R,2S,4S,5R)-사이클로헥세인테트라카복실산 이무수물에서 유래하는 성분이다. 이들을 사용함으로써 양호한 용제 용해성, 알칼리 용해 속도, 투명성, 응력 특성을 실현할 수 있다.Preferably, a component derived from pyromellitic anhydride, a component derived from 3,3',4,4'-biphenyltetracarboxylic acid anhydride, and a component derived from 2,3,3',4'-biphenyltetracarboxylic acid anhydride Component derived from 2,2',3,3'-biphenyltetracarboxylic acid anhydride-derived component, 3,3',4,4'-benzophenonetetracarboxylic acid anhydride-derived component, 4,4'-( Hexafluoroisopropylidene) Components derived from iphthalic anhydride, components derived from 3,3',4,4'-tetracarboxydiphenylether dianhydride, 1,2,5,6-naphthalenetetracarboxylic anhydride Component derived from 5,5′-[p-phenylenebis(oxycarbonyl)]diphthalic anhydride, component derived from cyclobutanetetracarboxylic acid anhydride, component derived from cyclopentanetetracarboxylic acid anhydride Components derived from bicyclo[2.2.2]octane-2,3,5,6-tetracarboxylic dianhydride, components derived from (1S,2S,4R,5R)-cyclohexanetetracarboxylic dianhydride , It is a component derived from (1R,2S,4S,5R)-cyclohexanetetracarboxylic dianhydride, more preferably a component derived from pyromellitic anhydride, 3,3',4,4'-biphenyl Components derived from tetracarboxylic acid anhydride, components derived from 4,4'-(hexafluoroisopropylidene)ifthalic anhydride, components derived from cyclobutanetetracarboxylic acid anhydride, 3,3',4,4'- A component derived from tetracarboxydiphenylether dianhydride, a component derived from cyclopentanetetracarboxylic acid anhydride, a component derived from 5,5′-[p-phenylenebis(oxycarbonyl)]diphthalic anhydride, ( These are components derived from 1S,2S,4R,5R)-cyclohexanetetracarboxylic dianhydride and components derived from (1R,2S,4S,5R)-cyclohexanetetracarboxylic dianhydride. By using these, good solvent solubility, alkali dissolution rate, transparency, and stress characteristics can be realized.
R1을 핵으로 하여 4개의 카복시기를 갖는 화합물 등에서 유래하는 산성분의 수지에 있어서의 함유량으로서는, 수지를 구성하는 전체 반복 단위에 대하여 20~70몰%인 것이 바람직하고, 30~60몰%인 것이 보다 바람직하다.The content in the resin of an acid component derived from a compound having four carboxyl groups with R 1 as a nucleus is preferably 20 to 70 mol%, and preferably 30 to 60 mol%, based on all repeating units constituting the resin. it is more preferable
식 (1)에 있어서의 R2는, 2가의 유기기를 나타낸다. 2가의 유기기로서는, 직쇄 또는 분기의 지방족기, 환상의 지방족기 및 방향족기를 포함하는 기가 예시되며, 탄소수 2~20의 직쇄 또는 분기의 지방족기, 탄소수 3~20의 환상의 지방족기, 탄소수 3~20의 방향족기, 또는, 이들의 조합으로 이루어지는 기가 바람직하고, 탄소수 6~20의 방향족기를 포함하는 기가 보다 바람직하다. 상기 직쇄 또는 분기의 지방족기는 쇄 중의 탄화 수소기가 헤테로 원자를 포함하는 기로 치환되어 있어도 되고 상기 환상의 지방족기 및 방향족기는 환원의 탄화 수소기가 헤테로 원자를 포함하는 기로 치환되어 있어도 된다. 본 발명의 바람직한 실시형태로서, -Ar- 및 -Ar-L-Ar-로 나타나는 기인 것이 예시되며, 특히 바람직하게는 -Ar-L-Ar-로 나타나는 기이다. 단, Ar은, 각각 독립적으로, 방향족기이며, L은, 단결합, 불소 원자로 치환되어 있어도 되는 탄소수 1~10의 지방족 탄화 수소기, -O-, -CO-, -S-, -SO2- 또는 -NHCO-, 혹은, 상기의 2개 이상의 조합으로 이루어지는 기이다. 이들의 바람직한 범위는, 상술한 바와 같다.R 2 in Formula (1) represents a divalent organic group. Examples of the divalent organic group include a straight-chain or branched aliphatic group, a cyclic aliphatic group, and a group containing an aromatic group, and examples include a straight-chain or branched aliphatic group of 2 to 20 carbon atoms, a cyclic aliphatic group of 3 to 20 carbon atoms, and a group containing 3 carbon atoms. An aromatic group of ~20 or a group comprising a combination thereof is preferable, and a group containing an aromatic group having 6 to 20 carbon atoms is more preferable. The linear or branched aliphatic group may have a hydrocarbon group in the chain substituted with a group containing a hetero atom, and the cyclic aliphatic group and aromatic group may have a reduced hydrocarbon group substituted with a group containing a hetero atom. As a preferred embodiment of the present invention, groups represented by -Ar- and -Ar-L-Ar- are exemplified, and groups represented by -Ar-L-Ar- are particularly preferred. However, Ar is each independently an aromatic group, L is a single bond, an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, -O-, -CO-, -S-, -SO 2 - or -NHCO-, or a group consisting of a combination of two or more of the above. These preferred ranges are as described above.
R2는, 다이아민으로부터 유도되는 것이 바람직하다. 상기 수지의 제조에 이용되는 다이아민으로서는, 직쇄 또는 분기의 지방족, 환상의 지방족 또는 방향족 다이아민 등을 들 수 있다. 다이아민은, 1종만 이용해도 되고, 2종 이상 이용해도 된다.R 2 is preferably derived from diamine. As diamine used for manufacture of the said resin, linear or branched aliphatic, cyclic aliphatic, or aromatic diamine, etc. are mentioned. As for diamine, only 1 type may be used and 2 or more types may be used.
구체적으로는, 탄소수 2~20의 직쇄 또는 분기의 지방족기, 탄소수 3~20의 환상의 지방족기, 탄소수 3~20의 방향족기, 또는, 이들의 조합으로 이루어지는 기를 포함하는 다이아민인 것이 바람직하고, 탄소수 6~20의 방향족기를 포함하는 다이아민인 것이 보다 바람직하다. 상기 직쇄 또는 분기의 지방족기는 쇄 중의 탄화 수소기가 헤테로 원자를 포함하는 기로 치환되어 있어도 되고 상기 환상의 지방족기 및 방향족기는 환원의 탄화 수소기가 헤테로 원자를 포함하는 기로 치환되어 있어도 된다. 방향족기를 포함하는 기의 예로서는, 하기를 들 수 있다.Specifically, it is preferably a diamine containing a group consisting of a straight-chain or branched aliphatic group having 2 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 3 to 20 carbon atoms, or a combination thereof, It is more preferable that it is a diamine containing a C6-C20 aromatic group. The linear or branched aliphatic group may have a hydrocarbon group in the chain substituted with a group containing a hetero atom, and the cyclic aliphatic group and aromatic group may have a reduced hydrocarbon group substituted with a group containing a hetero atom. Examples of the group containing an aromatic group include the following.
[화학식 6][Formula 6]
식 중, A는 단결합 또는 2가의 연결기를 나타내며, 단결합, 또는, 불소 원자로 치환되어 있어도 되는 탄소수 1~10의 지방족 탄화 수소기, -O-, -C(=O)-, -S-, -SO2-, NHCO-, 또는, 이들의 조합으로부터 선택되는 기인 것이 바람직하고, 단결합, 불소 원자로 치환되어 있어도 되는 탄소수 1~3의 알킬렌기, -O-, -C(=O)-, -S-, 또는, -SO2-로부터 선택되는 기인 것이 보다 바람직하며, -CH2-, -O-, -S-, -SO2-, -C(CF3)2-, 또는, -C(CH3)2-인 것이 더 바람직하다.In the formula, A represents a single bond or a divalent linking group, and is a single bond or an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, -O-, -C(=O)-, -S- , -SO 2 -, NHCO-, or a group selected from combinations thereof, preferably a single bond, an alkylene group having 1 to 3 carbon atoms which may be substituted with a fluorine atom, -O-, -C(=O)- , -S-, or a group selected from -SO 2 -, more preferably -CH 2 -, -O-, -S-, -SO 2 -, -C(CF 3 ) 2 -, or - more preferably C(CH 3 ) 2 -.
식 중, *는 다른 구조와의 결합 부위를 나타낸다.In the formula, * represents a binding site with another structure.
다이아민으로서는, 구체적으로는, 1,2-다이아미노에테인, 1,2-다이아미노프로페인, 1,3-다이아미노프로페인, 1,4-다이아미노뷰테인 및 1,6-다이아미노헥세인; 1,2- 또는 1,3-다이아미노사이클로펜테인, 1,2-, 1,3- 또는 1,4-다이아미노사이클로헥세인, 1,2-, 1,3- 또는 1,4-비스(아미노메틸)사이클로헥세인, 비스-(4-아미노사이클로헥실)메테인, 비스-(3-아미노사이클로헥실)메테인, 4,4'-다이아미노-3,3'-다이메틸사이클로헥실메테인 및 아이소포론다이아민; m- 또는 p-페닐렌다이아민, 다이아미노톨루엔, 4,4'- 또는 3,3'-다이아미노바이페닐, 4,4'-다이아미노다이페닐에터, 3,3-다이아미노다이페닐에터, 4,4'- 및 3,3'-다이아미노다이페닐메테인, 4,4'- 및 3,3'-다이아미노다이페닐설폰, 4,4'- 및 3,3'-다이아미노다이페닐설파이드, 4,4'- 또는 3,3'-다이아미노벤조페논, 3,3'-다이메틸-4,4'-다이아미노바이페닐, 2,2'-다이메틸-4,4'-다이아미노바이페닐, 3,3'-다이메톡시-4,4'-다이아미노바이페닐, 2,2-비스(4-아미노페닐)프로페인, 2,2-비스(4-아미노페닐)헥사플루오로프로페인, 2,2-비스(3-하이드록시-4-아미노페닐)프로페인, 2,2-비스(3-하이드록시-4-아미노페닐)헥사플루오로프로페인, 2,2-비스(3-아미노-4-하이드록시페닐)프로페인, 2,2-비스(3-아미노-4-하이드록시페닐)헥사플루오로프로페인, 비스(3-아미노-4-하이드록시페닐)설폰, 비스(4-아미노-3-하이드록시페닐)설폰, 4,4'-다이아미노파라터페닐, 4,4'-비스(4-아미노페녹시)바이페닐, 비스[4-(4-아미노페녹시)페닐]설폰, 비스[4-(3-아미노페녹시)페닐]설폰, 비스[4-(2-아미노페녹시)페닐]설폰, 1,4-비스(4-아미노페녹시)벤젠, 9,10-비스(4-아미노페닐)안트라센, 3,3'-다이메틸-4,4'-다이아미노다이페닐설폰, 1,3-비스(4-아미노페녹시)벤젠, 1,3-비스(3-아미노페녹시)벤젠, 1,3-비스(4-아미노페닐)벤젠, 3,3'-다이에틸-4,4'-다이아미노다이페닐메테인, 3,3'-다이메틸-4,4'-다이아미노다이페닐메테인, 4,4'-다이아미노옥타플루오로바이페닐, 2,2-비스[4-(4-아미노페녹시)페닐]프로페인, 2,2-비스[4-(4-아미노페녹시)페닐]헥사플루오로프로페인, 9,9-비스(4-아미노페닐)-10-하이드로안트라센, 3,3',4,4'-테트라아미노바이페닐, 3,3',4,4'-테트라아미노다이페닐에터, 1,4-다이아미노안트라퀴논, 1,5-다이아미노안트라퀴논, 3,3-다이하이드록시-4,4'-다이아미노바이페닐, 9,9'-비스(4-아미노페닐)플루오렌, 4,4'-다이메틸-3,3'-다이아미노다이페닐설폰, 3,3',5,5'-테트라메틸-4,4'-다이아미노다이페닐메테인, 2,4- 및 2,5-다이아미노큐멘, 2,5-다이메틸-p-페닐렌다이아민, 아세토구아나민, 2,3,5,6-테트라메틸-p-페닐렌다이아민, 2,4,6-트라이메틸-m-페닐렌다이아민, 비스(3-아미노프로필)테트라메틸다이실록세인, 비스(p-아미노페닐)옥타메틸펜타실록세인, 2,7-다이아미노플루오렌, 2,5-다이아미노피리딘, 1,2-비스(4-아미노페닐)에테인, 다이아미노벤즈아닐라이드, 다이아미노벤조산의 에스터, 1,5-다이아미노나프탈렌, 다이아미노벤조트라이플루오라이드, 1,3-비스(4-아미노페닐)헥사플루오로프로페인, 1,4-비스(4-아미노페닐)옥타플루오로뷰테인, 1,5-비스(4-아미노페닐)데카플루오로펜테인, 1,7-비스(4-아미노페닐)테트라데카플루오로헵테인, 2,2-비스[4-(3-아미노페녹시)페닐]헥사플루오로프로페인, 2,2-비스[4-(2-아미노페녹시)페닐]헥사플루오로프로페인, 2,2-비스[4-(4-아미노페녹시)-3,5-다이메틸페닐]헥사플루오로프로페인, 2,2-비스[4-(4-아미노페녹시)-3,5-비스(트라이플루오로메틸)페닐]헥사플루오로프로페인, p-비스(4-아미노-2-트라이플루오로메틸페녹시)벤젠, 4,4'-비스(4-아미노-2-트라이플루오로메틸페녹시)바이페닐, 4,4'-비스(4-아미노-3-트라이플루오로메틸페녹시)바이페닐, 4,4'-비스(4-아미노-2-트라이플루오로메틸페녹시)다이페닐설폰, 4,4'-비스(3-아미노-5-트라이플루오로메틸페녹시)다이페닐설폰, 2,2-비스[4-(4-아미노-3-트라이플루오로메틸페녹시)페닐]헥사플루오로프로페인, 3,3',5,5'-테트라메틸-4,4'-다이아미노바이페닐, 4,4'-다이아미노-2,2'-비스(트라이플루오로메틸)바이페닐, 2,2',5,5',6,6'-헥사플루오로톨리딘 및 4,4'-다이아미노쿼터페닐로부터 선택되는 적어도 1종의 다이아민을 들 수 있다.As diamine, specifically, 1,2-diaminoethane, 1,2-diaminopropane, 1,3-diaminopropane, 1,4-diaminobutane, and 1,6-diaminohexyl three; 1,2- or 1,3-diaminocyclopentane, 1,2-, 1,3- or 1,4-diaminocyclohexane, 1,2-, 1,3- or 1,4-bis (Aminomethyl)cyclohexane, bis-(4-aminocyclohexyl)methane, bis-(3-aminocyclohexyl)methane, 4,4'-diamino-3,3'-dimethylcyclohexylmethane phosphorus and isophoronediamine; m- or p-phenylenediamine, diaminotoluene, 4,4'- or 3,3'-diaminobiphenyl, 4,4'-diaminodiphenyl ether, 3,3-diaminodiphenyl Ether, 4,4'- and 3,3'-diaminodiphenylmethane, 4,4'- and 3,3'-diaminodiphenylsulfone, 4,4'- and 3,3'-di Aminodiphenylsulfide, 4,4'- or 3,3'-diaminobenzophenone, 3,3'-dimethyl-4,4'-diaminobiphenyl, 2,2'-dimethyl-4,4 '-diaminobiphenyl, 3,3'-dimethoxy-4,4'-diaminobiphenyl, 2,2-bis (4-aminophenyl) propane, 2,2-bis (4-aminophenyl ) Hexafluoropropane, 2,2-bis (3-hydroxy-4-aminophenyl) propane, 2,2-bis (3-hydroxy-4-aminophenyl) hexafluoropropane, 2, 2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, bis(3-amino-4-hydroxyphenyl) )sulfone, bis(4-amino-3-hydroxyphenyl)sulfone, 4,4'-diaminoparaterphenyl, 4,4'-bis(4-aminophenoxy)biphenyl, bis[4-(4 -aminophenoxy)phenyl]sulfone, bis[4-(3-aminophenoxy)phenyl]sulfone, bis[4-(2-aminophenoxy)phenyl]sulfone, 1,4-bis(4-aminophenoxy) ) Benzene, 9,10-bis (4-aminophenyl) anthracene, 3,3'-dimethyl-4,4'-diaminodiphenylsulfone, 1,3-bis (4-aminophenoxy) benzene, 1 ,3-bis(3-aminophenoxy)benzene, 1,3-bis(4-aminophenyl)benzene, 3,3'-diethyl-4,4'-diaminodiphenylmethane, 3,3' -Dimethyl-4,4'-diaminodiphenylmethane, 4,4'-diaminooctafluorobiphenyl, 2,2-bis[4-(4-aminophenoxy)phenyl]propane, 2 ,2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane, 9,9-bis(4-aminophenyl)-10-hydroanthracene, 3,3',4,4'-tetra Aminobiphenyl, 3,3',4,4'-tetraaminodiphenyl ether, 1,4-diaminoanthraquinone, 1,5-diaminoanthraquinone, 3,3-dihydroxy-4,4 '-Diamino Biphenyl, 9,9'-bis(4-aminophenyl)fluorene, 4,4'-dimethyl-3,3'-diaminodiphenylsulfone, 3,3',5,5'-tetramethyl- 4,4'-diaminodiphenylmethane, 2,4- and 2,5-diaminocumene, 2,5-dimethyl-p-phenylenediamine, acetoguanamine, 2,3,5,6 -Tetramethyl-p-phenylenediamine, 2,4,6-trimethyl-m-phenylenediamine, bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpenta Siloxane, 2,7-diaminofluorene, 2,5-diaminopyridine, 1,2-bis(4-aminophenyl)ethane, diaminobenzanilide, ester of diaminobenzoic acid, 1,5-di Aminonaphthalene, diaminobenzotrifluoride, 1,3-bis (4-aminophenyl) hexafluoropropane, 1,4-bis (4-aminophenyl) octafluorobutane, 1,5-bis ( 4-aminophenyl) decafluoropentane, 1,7-bis (4-aminophenyl) tetradecafluoroheptane, 2,2-bis [4- (3-aminophenoxy) phenyl] hexafluoroprop Pain, 2,2-bis[4-(2-aminophenoxy)phenyl]hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)-3,5-dimethylphenyl]hexafluoro Ropropane, 2,2-bis[4-(4-aminophenoxy)-3,5-bis(trifluoromethyl)phenyl]hexafluoropropane, p-bis(4-amino-2-tri Fluoromethylphenoxy) benzene, 4,4'-bis (4-amino-2-trifluoromethylphenoxy) biphenyl, 4,4'-bis (4-amino-3-trifluoromethylphenoxy ) Biphenyl, 4,4'-bis (4-amino-2-trifluoromethylphenoxy) diphenylsulfone, 4,4'-bis (3-amino-5-trifluoromethylphenoxy) diphenyl Sulfone, 2,2-bis[4-(4-amino-3-trifluoromethylphenoxy)phenyl]hexafluoropropane, 3,3',5,5'-tetramethyl-4,4'- Diaminobiphenyl, 4,4'-diamino-2,2'-bis(trifluoromethyl)biphenyl, 2,2',5,5',6,6'-hexafluorotolidine and 4 and at least one type of diamine selected from 4'-diamino quaterphenyl.
또, 국제 공개공보 제2017/038598호의 단락 0030~0031에 기재된 다이아민 (DA-1)~(DA-18)도 바람직하다.Moreover, Paragraph 0030 of International Publication No. 2017/038598 - the diamine (DA-1) of 0031 - (DA-18) are also preferable.
또, 국제 공개공보 제2017/038598호의 단락 0032~0034에 기재된 2개 이상의 알킬렌글라이콜 단위를 주쇄에 갖는 다이아민도 바람직하게 이용된다.Moreover, the diamine which has 2 or more alkylene glycol units of Paragraph 0032 of International Publication No. 2017/038598 - 0034 in a main chain is also used preferably.
R2는, 얻어지는 유기막의 유연성의 관점에서, -Ar-L-Ar-로 나타나는 것이 바람직하다. 단, Ar은, 각각 독립적으로, 방향족기이며, L은, 불소 원자로 치환되어 있어도 되는 탄소수 1~10의 지방족 탄화 수소기, -O-, -CO-, -S-, -SO2- 또는 NHCO-, 혹은, 상기의 2개 이상의 조합으로 이루어지는 기이다. Ar은, 페닐렌기가 바람직하고, L은, 불소 원자로 치환되어 있어도 되는 탄소수 1 또는 2의 지방족 탄화 수소기, -O-, -CO-, -S- 또는 SO2-가 바람직하다. 여기에서의 지방족 탄화 수소기는, 알킬렌기가 바람직하다.R 2 is preferably represented by -Ar-L-Ar- from the viewpoint of flexibility of the resulting organic film. However, Ar is each independently an aromatic group, and L is an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, -O-, -CO-, -S-, -SO 2 - or NHCO -, or a group consisting of a combination of two or more of the above. Ar is preferably a phenylene group, and L is preferably an aliphatic hydrocarbon group having 1 or 2 carbon atoms which may be substituted with a fluorine atom, -O-, -CO-, -S- or SO 2 -. The aliphatic hydrocarbon group here is preferably an alkylene group.
또, R2는, i선 투과율의 관점에서, 하기 식 (51) 또는 식 (61)로 나타나는 2가의 유기기인 것이 바람직하다. 특히, i선 투과율, 입수 용이성의 관점에서, 식 (61)로 나타나는 2가의 유기기인 것이 보다 바람직하다.Moreover, it is preferable that R <2> is a divalent organic group represented by following formula (51) or formula (61) from a viewpoint of i-line transmittance. In particular, from the viewpoint of i-line transmittance and availability, it is more preferably a divalent organic group represented by formula (61).
식 (51)formula (51)
[화학식 7][Formula 7]
식 (51) 중, R50~R57은, 각각 독립적으로, 수소 원자, 불소 원자 또는 1가의 유기기이고, R50~R57 중 적어도 하나는, 불소 원자, 메틸기 또는 트라이플루오로메틸기이다. *는 다른 구조와의 결합 부위를 나타낸다.In Formula (51), R 50 to R 57 are each independently a hydrogen atom, a fluorine atom, or a monovalent organic group, and at least one of R 50 to R 57 is a fluorine atom, a methyl group, or a trifluoromethyl group. * indicates a binding site with another structure.
R50~R57의 1가의 유기기로서는, 탄소수 1~10(바람직하게는 탄소수 1~6)의 무치환의 알킬기, 탄소수 1~10(바람직하게는 탄소수 1~6)의 불화 알킬기 등을 들 수 있다.Examples of the monovalent organic group for R 50 to R 57 include an unsubstituted alkyl group having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms), a fluorinated alkyl group having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms), and the like. can
[화학식 8][Formula 8]
식 (61) 중, R58 및 R59는, 각각 독립적으로, 불소 원자, 메틸기, 또는 트라이플루오로메틸기이다. *는 다른 구조와의 결합 부위를 나타낸다.In Formula (61), R 58 and R 59 are each independently a fluorine atom, a methyl group, or a trifluoromethyl group. * indicates a binding site with another structure.
식 (51) 또는 (61)의 구조를 부여하는 다이아민 화합물로서는, 2,2'-다이메틸벤지딘, 2,2'-비스(트라이플루오로메틸)-4,4'-다이아미노바이페닐, 2,2'-비스(플루오로)-4,4'-다이아미노바이페닐, 4,4'-다이아미노옥타플루오로바이페닐 등을 들 수 있다. 이들은 1종으로 또는 2종 이상을 조합하여 이용해도 된다.Examples of the diamine compound giving the structure of Formula (51) or (61) include 2,2'-dimethylbenzidine, 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl, 2,2'-bis(fluoro)-4,4'-diaminobiphenyl, 4,4'-diaminooctafluorobiphenyl, etc. are mentioned. You may use these by 1 type or in combination of 2 or more types.
또, 기판과의 접착성을 높이기 위하여 R2를 핵으로 하는 다이아민 성분으로서 실리콘다이아민 성분으로 할 수 있다. 이 예로서는, 비스(4-아미노페닐)다이메틸실레인 성분, 비스(4-아미노페닐)테트라메틸실록세인 성분, 비스(4-아미노페닐)테트라메틸다이실록세인 성분, 비스(γ-아미노프로필)테트라메틸다이실록세인 성분, 1,4-비스(γ-아미노프로필다이메틸실릴)벤젠 성분, 비스(4-아미노뷰틸)테트라메틸다이실록세인 성분, 비스(γ-아미노프로필)테트라페닐다이실록세인 성분 등을 들 수 있다.Further, in order to improve adhesion to the substrate, a silicon diamine component can be used as a diamine component having R 2 as a nucleus. Examples of this include a bis(4-aminophenyl)dimethylsilane component, a bis(4-aminophenyl)tetramethylsiloxane component, a bis(4-aminophenyl)tetramethyldisiloxane component, and bis(γ-aminopropyl) Tetramethyldisiloxane component, 1,4-bis(γ-aminopropyldimethylsilyl)benzene component, bis(4-aminobutyl)tetramethyldisiloxane component, bis(γ-aminopropyl)tetraphenyldisiloxane Ingredients etc. are mentioned.
실리콘다이아민 성분으로서, 하기 구조도 들 수 있다.As a silicon diamine component, the following structure is also mentioned.
[화학식 9][Formula 9]
상기 식에 있어서, R5 및 R6은 2가의 유기기를 나타내고, R7 및 R8은 각각 독립적으로, 1가의 유기기를 나타낸다. 즉, 복수의 R7은 서로 동일해도 되고 상이해도 된다. 복수의 R8은 서로 동일해도 되고 상이해도 된다.In the above formula, R 5 and R 6 represent a divalent organic group, and R 7 and R 8 each independently represent a monovalent organic group. That is, a plurality of R 7 may be the same as or different from each other. A plurality of R 8 may be the same as or different from each other.
R5 및 R6으로 나타나는 2가의 유기기로서는, 치환기를 갖고 있어도 되는 탄소수 1~20의 직쇄 혹은 분기의 알킬렌기, 탄소수 6~20의 페닐렌기, 탄소수 3~20의 2가의 지환기, 또는 이들을 조합하여 구성되는 기를 나타낸다.As the divalent organic group represented by R 5 and R 6 , a straight chain or branched alkylene group having 1 to 20 carbon atoms, a phenylene group having 6 to 20 carbon atoms, a divalent alicyclic group having 3 to 20 carbon atoms, or these which may have substituents. A group constituted by combining is shown.
R7 및 R8로 나타나는 1가의 유기기로서는, 치환기를 갖고 있어도 되는 탄소수 1~20의 직쇄 혹은 분기의 알킬기 혹은 탄소수 6~20의 아릴기를 나타낸다.As the monovalent organic group represented by R 7 and R 8 , a straight-chain or branched alkyl group having 1 to 20 carbon atoms or an aryl group having 6 to 20 carbon atoms which may have a substituent is shown.
보다 구체적으로는, 하기를 들 수 있다.More specifically, the following is mentioned.
[화학식 10][Formula 10]
특정 수지에 있어서, 수지 중에 존재하는 복수의 -CO2R3 중 적어도 하나는, 산의 작용에 의하여 분해되어 알칼리 가용성기를 발생하는 기인 것이 바람직하다.In a specific resin, at least one of a plurality of -CO 2 R 3 present in the resin is preferably a group that decomposes under the action of an acid to generate an alkali-soluble group.
산의 작용에 의하여 분해되어 알칼리 가용성기를 발생하는 기란, 산의 작용에 의하여 분해되어, 수지 측에 하이드록시기(예를 들면, 페놀성 하이드록시기), 카복시기와 같은 알칼리 가용성기를 발생하는 기(이하, 산분해성기라고도 한다.)를 말한다. 본 발명에 있어서, 산분해성기는, 산의 작용에 의하여 분해되어, 수지 측에 알칼리 가용성기로서 카복시기를 발생하는 기인 것이 바람직하다.The group decomposed by the action of an acid to generate an alkali-soluble group is a group that is decomposed by the action of an acid to generate an alkali-soluble group such as a hydroxyl group (eg, phenolic hydroxyl group) or a carboxyl group on the resin side ( Hereinafter, it is also referred to as an acid decomposable group.). In the present invention, the acid-decomposable group is preferably a group that is decomposed by the action of an acid and generates a carboxyl group as an alkali-soluble group on the resin side.
산분해성기로서 바람직한 기는, 이들 알칼리 가용성기의 수소 원자를 산으로 탈리하는 기로 치환된 기이다.Groups preferable as the acid-decomposable group are groups substituted with groups that release hydrogen atoms of these alkali-soluble groups with acid.
산으로 탈리하는 기로서는, 예를 들면, -C(R36)(R37)(R38), -C(R36)(R37)(OR39), -C(R01)(R02)(OR39) 등을 들 수 있다. 식 중, R36~R39는, 각각 독립적으로, 알킬기, 사이클로알킬기, 아릴기, 아랄킬기 또는 알켄일기를 나타낸다. R36과 R37은, 서로 결합되어 환을 형성해도 된다.Examples of the group that leaves with an acid include -C(R 36 )(R 37 )(R 38 ), -C(R 36 )(R 37 )(OR 39 ), -C(R 01 )(R 02 ) (OR 39 ) and the like. In the formula, R 36 to R 39 each independently represent an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group. R 36 and R 37 may be bonded to each other to form a ring.
상기 알킬기로서는, 탄소수 1~10의 알킬기가 바람직하고, 탄소수 1~5의 알킬기가 보다 바람직하다.As said alkyl group, a C1-C10 alkyl group is preferable, and a C1-C5 alkyl group is more preferable.
상기 알킬기는, 직쇄상, 분기쇄상 중 어느 것이어도 된다.The alkyl group may be linear or branched.
상기 사이클로알킬기로서는, 탄소수 3~12의 사이클로알킬기가 바람직하고, 탄소수 3~8의 사이클로알킬기가 보다 바람직하다.As said cycloalkyl group, a C3-C12 cycloalkyl group is preferable, and a C3-C8 cycloalkyl group is more preferable.
상기 사이클로알킬기는 단환 구조여도 되고, 축합환 등의 다환 구조여도 된다.The cycloalkyl group may have a monocyclic structure or a polycyclic structure such as a condensed ring.
상기 아릴기는 탄소수 6~30의 방향족 탄화 수소기인 것이 바람직하고, 페닐기인 것이 보다 바람직하다.It is preferable that the said aryl group is a C6-C30 aromatic hydrocarbon group, and it is more preferable that it is a phenyl group.
상기 아랄킬기로서는, 탄소수 7~20의 아랄킬기가 바람직하고, 탄소수 7~16의 아랄킬기가 보다 바람직하다.As said aralkyl group, a C7-C20 aralkyl group is preferable, and a C7-C16 aralkyl group is more preferable.
상기 아랄킬기는 알킬기에 의하여 치환된 아릴기를 의도하고 있으며, 이들 알킬기 및 아릴기의 바람직한 양태는, 상술한 알킬기 및 아릴기의 바람직한 양태와 동일하다.The aralkyl group is intended to be an aryl group substituted with an alkyl group, and preferred embodiments of these alkyl and aryl groups are the same as those of the above-described alkyl and aryl groups.
상기 알켄일기는 탄소수 3~20의 알켄일기가 바람직하고, 탄소수 3~16의 알켄일기가 보다 바람직하다.The alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms, and more preferably an alkenyl group having 3 to 16 carbon atoms.
또, 이들 기는 본 발명의 효과가 얻어지는 범위 내에서, 공지의 치환기를 더 갖고 있어도 된다.Moreover, these groups may further have a well-known substituent within the range in which the effect of this invention is acquired.
R01 및 R02는, 각각 독립적으로, 수소 원자, 알킬기, 사이클로알킬기, 아릴기, 아랄킬기 또는 알켄일기를 나타낸다.R 01 and R 02 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.
산분해성기로서는 바람직하게는, 제3급 알킬에스터기, 아세탈에스터기, 큐밀에스터기, 엔올에스터기 등이다. 더 바람직하게는, 제3급 알킬에스터기, 아세탈에스터기이며, 이것을 이용함으로써 고감도이며 고해상성의 감광막이 얻어진다.The acid decomposable group is preferably a tertiary alkyl ester group, an acetal ester group, a cumyl ester group, or an enol ester group. More preferably, it is a tertiary alkyl ester group and an acetal ester group, and a photosensitive film with high sensitivity and high resolution is obtained by using this.
산분해성기로서의 제3급 알킬에스터기로서는, 카복시기의 수소 원자가 하기 식 (AI)로 나타나는 기로 치환된 에스터기인 것이 바람직하다.As a tertiary alkyl ester group as an acid-decomposable group, it is preferable that it is an ester group in which the hydrogen atom of a carboxy group was substituted by the group represented by the following formula (AI).
[화학식 11][Formula 11]
식 (AI)에 있어서,In formula (AI),
T는, 단결합 또는 *-Rt-COO-#(*는 식 (AI) 중의 *와 동일한 의미이며, #은 Rx1~Rx3과 결합하는 탄소 원자와의 결합 부위를 나타낸다)을 나타낸다. Rt는, 알킬렌기 또는 사이클로알킬렌기를 나타낸다.T represents a single bond or *-Rt-COO-# (* has the same meaning as * in formula (AI), and # represents a bonding site with a carbon atom bonded to Rx 1 to Rx 3 ). Rt represents an alkylene group or a cycloalkylene group.
Rx1~Rx3은, 각각 독립적으로, 수소 원자, 알킬기(직쇄 혹은 분기) 또는 사이클로알킬기(단환 혹은 다환)를 나타낸다.Rx 1 to Rx 3 each independently represent a hydrogen atom, an alkyl group (straight or branched) or a cycloalkyl group (monocyclic or polycyclic).
Rx1~Rx3 중 2개가 결합하여, 사이클로알킬기(단환 혹은 다환)를 형성해도 된다.Two of Rx 1 to Rx 3 may combine to form a cycloalkyl group (monocyclic or polycyclic).
*는 다른 구조와의 결합 부위를 나타낸다.* indicates a binding site with another structure.
Rt는, 탄소수 1~5의 알킬렌기가 바람직하고, -CH2-기, -(CH2)2-기, -(CH2)3-기가 보다 바람직하다.Rt is preferably an alkylene group having 1 to 5 carbon atoms, and more preferably a -CH 2 - group, a -(CH 2 ) 2 - group, or a -(CH 2 ) 3 - group.
Rx1~Rx3이 나타내는 알킬기로서는, 메틸기, 에틸기, n-프로필기, 아이소프로필기, n-뷰틸기, 아이소뷰틸기, t-뷰틸기, 헥실기, 옥틸기, 도데실기 등의 탄소수 1~20의 알킬기가 바람직하고, 탄소수 1~6의 알킬기가 보다 바람직하다.Examples of the alkyl group represented by Rx 1 to Rx 3 include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, t-butyl, hexyl, octyl, and dodecyl groups having 1 to carbon atoms; An alkyl group of 20 is preferable, and an alkyl group of 1 to 6 carbon atoms is more preferable.
Rx1~Rx3이 나타내는 사이클로알킬기로서는, 사이클로펜틸기, 사이클로헥실기 등의 단환의 사이클로알킬기, 노보닐기, 테트라사이클로데칸일기, 테트라사이클로도데칸일기, 아다만틸기 등의 다환의 사이클로알킬기가 바람직하다.The cycloalkyl group represented by Rx 1 to Rx 3 is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group. do.
Rx1~Rx3 중 2개가 결합하여 형성되는 사이클로알킬기로서는, 사이클로펜틸기, 사이클로헥실기 등의 단환의 사이클로알킬기, 노보닐기, 테트라사이클로데칸일기, 테트라사이클로도데칸일기, 아다만틸기 등의 다환의 사이클로알킬기가 바람직하다. 탄소수 5 또는 6의 단환의 사이클로알킬기가 특히 바람직하다.Examples of the cycloalkyl group formed by combining two of Rx 1 to Rx 3 include a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group, a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group. A cycloalkyl group of the ring is preferred. A monocyclic cycloalkyl group having 5 or 6 carbon atoms is particularly preferred.
식 (AI)에 있어서, Rx1이 메틸기 또는 에틸기이며, Rx2와 Rx3이 결합하여 상술한 사이클로알킬기를 형성하고 있는 양태가 바람직하다.In Formula (AI), an embodiment in which Rx 1 is a methyl group or an ethyl group and Rx 2 and Rx 3 are bonded to form the above-mentioned cycloalkyl group is preferable.
상기 각 기는, 치환기를 갖고 있어도 되고, 치환기로서는, 예를 들면, 알킬기(탄소수 1~4), 할로젠 원자, 하이드록시기, 알콕시기(탄소수 1~4), 폴리알킬렌옥시기, 카복시기, 알콕시카보닐기(탄소수 2~6) 등을 들 수 있으며, 탄소수 20 이하가 바람직하다.Each said group may have a substituent, and as a substituent, an alkyl group (C 1-4), a halogen atom, a hydroxyl group, an alkoxy group (C 1-4), a polyalkyleneoxy group, a carboxy group, for example, and an alkoxycarbonyl group (having 2 to 6 carbon atoms), and preferably having 20 or less carbon atoms.
산분해성기로서의 제3급 알킬에스터기를 구성하는 식 (AI)로 나타나는 기의 구체예를 이하에 나타내지만, 본 발명은, 이에 한정되는 것은 아니다.Specific examples of the group represented by the formula (AI) constituting the tertiary alkyl ester group as the acid-decomposable group are shown below, but the present invention is not limited thereto.
구체예 중, Rxa, Rxb는 각각 탄소수 1~6의 알킬기를 나타낸다. Z는, 상기 각 기가 갖고 있어도 되는 치환기를 나타내고, 복수 존재하는 경우는 각각 독립이다. p는 0 또는 양의 정수를 나타낸다. *는 다른 구조와의 결합 부위를 나타낸다.In specific examples, Rxa and Rxb each represent an alkyl group having 1 to 6 carbon atoms. Z represents the substituent which said each group may have, and when it exists in multiple numbers, it is respectively independent. p represents 0 or a positive integer. * indicates a binding site with another structure.
[화학식 12][Formula 12]
[화학식 13][Formula 13]
산분해성기로서의 제3급 알킬에스터기는, 식 (AI)로 나타나는 기로서, 하기 식 (I)로 나타나는 기 및 하기 식 (II)로 나타나는 기 중 적어도 어느 하나를 갖는 제3급 알킬에스터기인 것이 보다 바람직하다.The tertiary alkyl ester group as the acid-decomposable group is a group represented by formula (AI) and is a tertiary alkyl ester group having at least either one of a group represented by the following formula (I) and a group represented by the following formula (II) more preferable
[화학식 14][Formula 14]
식 (I) 및 (II) 중, R2, R4, R5, R6은, 각각 독립적으로, 알킬기 또는 사이클로알킬기를 나타낸다.In formulas (I) and (II), R 2 , R 4 , R 5 , and R 6 each independently represent an alkyl group or a cycloalkyl group.
R은, 탄소 원자와 함께 지환 구조를 형성하는 데 필요한 원자단을 나타낸다.R represents an atomic group necessary for forming an alicyclic structure together with a carbon atom.
*는 다른 구조와의 결합 부위를 나타낸다.* indicates a binding site with another structure.
R2에 있어서의 알킬기는, 직쇄형이어도 되고 분기형이어도 되며, 치환기를 갖고 있어도 된다.The alkyl group in R 2 may be straight-chain or branched, and may have a substituent.
R2에 있어서의 사이클로알킬기는, 단환이어도 되고 다환이어도 되며, 치환기를 갖고 있어도 된다.The cycloalkyl group for R 2 may be monocyclic or polycyclic, and may have a substituent.
R2는 바람직하게는 알킬기이고, 보다 바람직하게는 탄소수 1~10, 더 바람직하게는 탄소수 1~5의 것이며, 예를 들면 메틸기, 에틸기를 들 수 있다.R 2 is preferably an alkyl group, more preferably 1 to 10 carbon atoms, still more preferably 1 to 5 carbon atoms, and examples thereof include a methyl group and an ethyl group.
R은, 탄소 원자와 함께 지환 구조를 형성하는 데 필요한 원자단을 나타낸다. R이 형성하는 지환 구조로서는, 단환의 지환 구조인 것이 바람직하고, 탄화 수소환 구조인 것이 보다 바람직하다. 상기 단환의 지환 구조 또는 탄화 수소환 구조의 탄소수는 바람직하게는 3~8, 보다 바람직하게는 5 또는 6이다.R represents an atomic group necessary for forming an alicyclic structure together with a carbon atom. The alicyclic structure formed by R is preferably a monocyclic alicyclic structure, and more preferably a hydrocarbon ring structure. The number of carbon atoms in the monocyclic alicyclic structure or hydrocarbon ring structure is preferably 3 to 8, more preferably 5 or 6.
R4, R5, R6에 있어서의 알킬기는, 직쇄형이어도 되고 분기형이어도 되며, 치환기를 갖고 있어도 된다. 알킬기로서는, 메틸기, 에틸기, n-프로필기, 아이소프로필기, n-뷰틸기, 아이소뷰틸기, t-뷰틸기, 헥실기 등의 탄소수 1~6의 것이 바람직하다.The alkyl group in R 4 , R 5 , and R 6 may be straight-chain or branched, and may have a substituent. As an alkyl group, C1-C6 things, such as a methyl group, an ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, t-butyl group, and a hexyl group, are preferable.
R4, R5, R6에 있어서의 사이클로알킬기는, 단환이어도 되고 다환이어도 되며, 치환기를 갖고 있어도 된다. 사이클로알킬기로서는, 사이클로펜틸기, 사이클로헥실기 등의 단환의 사이클로알킬기, 노보닐기, 테트라사이클로데칸일기, 테트라사이클로도데칸일기, 아다만틸기 등의 다환의 사이클로알킬기가 바람직하다.The cycloalkyl group for R 4 , R 5 and R 6 may be monocyclic or polycyclic, and may have a substituent. The cycloalkyl group is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group or an adamantyl group.
식 (I)에 의하여 나타나는 기로서는, 예를 들면, 하기 식 (I-a) 및 (I-b)에 의하여 나타나는 기를 들 수 있다.As group represented by formula (I), group represented by following formula (I-a) and (I-b) is mentioned, for example.
[화학식 15][Formula 15]
식 중, R2는, 식 (I)에 있어서의 R2와 동일한 의미이다.In the formula, R 2 has the same meaning as R 2 in the formula (I).
*는 다른 구조와의 결합 부위를 나타낸다.* indicates a binding site with another structure.
식 (II)로 나타나는 기가, 하기 식 (II-a)로 나타나는 기인 것이 바람직하다.The group represented by formula (II) is preferably a group represented by formula (II-a) below.
[화학식 16][Formula 16]
식 (II-a) 중,In formula (II-a),
R4 및 R5는, 식 (II)에 있어서의 것과 동일한 의미이다.R 4 and R 5 have the same meaning as those in formula (II).
*는 다른 구조와의 결합 부위를 나타낸다.* indicates a binding site with another structure.
산분해성기로서의 아세탈에스터기로서는, 구체적으로는 카복시기의 수소 원자가 하기 식 (III)으로 나타나는 기로 치환된 에스터기인 것이 바람직하다.As an acetal ester group as an acid-decomposable group, it is preferable that it is an ester group in which the hydrogen atom of a carboxy group was specifically substituted by the group represented by following formula (III).
[화학식 17][Formula 17]
Ra는, 수소 원자, 알킬기, 사이클로알킬기, 아릴기 또는 아랄킬기를 나타낸다.Ra represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group.
Rb는, 단결합 또는 2가의 연결기를 나타낸다.Rb represents a single bond or a divalent linking group.
Q는, 알킬기, 헤테로 원자를 포함하고 있어도 되는 지환기, 또는, 헤테로 원자를 포함하고 있어도 되는 방향환기를 나타낸다.Q represents an alkyl group, an alicyclic group which may contain a hetero atom, or an aromatic ring group which may contain a hetero atom.
Ra, Rb 및 Q 중 적어도 2개는, 서로 결합하여 환을 형성하고 있어도 된다. 이 환은, 5원환 또는 6원환인 것이 바람직하다.At least two of Ra, Rb, and Q may be bonded to each other to form a ring. It is preferable that this ring is a 5-membered ring or a 6-membered ring.
*는 다른 구조와의 결합 부위를 나타낸다.* indicates a binding site with another structure.
Ra로서의 알킬기, 사이클로알킬기, 아릴기 또는 아랄킬기는 상기 R36에 대한 알킬기, 사이클로알킬기, 아릴기, 아랄킬기로서 상술한 것과 동일한 것을 들 수 있다.The alkyl group, cycloalkyl group, aryl group or aralkyl group as Ra includes the same as those described above as the alkyl group, cycloalkyl group, aryl group or aralkyl group for R 36 .
보존 중의 산분해성기로서의 아세탈에스터기의 분해를 입체 장해에 의하여 억제할 수 있어, 패터닝성의 저하를 방지하는 관점에서, Ra가 하기 식 (IV) 또는 (V)로 나타나는 기인 것도 바람직하다.It is also preferable that Ra is a group represented by the following formula (IV) or (V) from the viewpoint of suppressing decomposition of the acetal ester group as an acid-decomposable group during storage by steric hindrance and preventing a decrease in patterning properties.
[화학식 18][Formula 18]
상기 식 중, Rc, Rd, Re, Rf 및 Rg는, 각각 독립적으로, 알킬기, 사이클로알킬기, 아릴기, 아랄킬기, 알콕시기, 아릴옥시기, 알콕시카보닐기, 아릴옥시카보닐기, 사이아노기 또는 할로젠 원자를 나타내고, Rc, Rd가 서로 결합하여 환을 형성하고 있어도 되며, Re, Rf 및 Rg 중 적어도 2개가 서로 결합하여 환을 형성하고 있어도 된다.In the above formula, Rc, Rd, Re, Rf and Rg are each independently an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an aryloxycarbonyl group, a cyano group, or It represents a halogen atom, and Rc and Rd may be bonded to each other to form a ring, or at least two of Re, Rf and Rg may be bonded to each other to form a ring.
*는 다른 구조와의 결합 부위를 나타낸다.* indicates a binding site with another structure.
Ra가 식 (IV) 또는 식 (V)로 나타나는 기이면, 식 (1)로 나타나는 반복 단위를 갖는 수지에 있어서, 보존 중의 이미드화 반응의 진행을 억제할 수 있어, 패터닝성의 저하를 방지할 수 있다.When Ra is a group represented by formula (IV) or formula (V), in a resin having a repeating unit represented by formula (1), progress of the imidation reaction during storage can be suppressed, and a decrease in patterning properties can be prevented. there is.
Rc, Rd, Re, Rf, Rg로서의 알킬기, 사이클로알킬기, 아릴기, 또는, 아랄킬기는 상기 R36에 대한 알킬기, 사이클로알킬기, 아릴기, 아랄킬기로서 상술한 것과 동일한 것을 들 수 있다.Examples of the alkyl, cycloalkyl, aryl, or aralkyl groups for Rc, Rd, Re, Rf, and Rg are the same as those described above as the alkyl, cycloalkyl, aryl, and aralkyl groups for R 36 .
Rc, Rd, Re, Rf, Rg로서의 알콕시기로서는, 탄소수 1~20의 알콕시기가 바람직하고, 탄소수 1~6의 알콕시기가 보다 바람직하다.As an alkoxy group as Rc, Rd, Re, Rf, or Rg, an alkoxy group having 1 to 20 carbon atoms is preferable, and an alkoxy group having 1 to 6 carbon atoms is more preferable.
또, 상기 알콕시기에 있어서의 알킬기부는 직쇄상, 분기쇄상 또는 환상 중 어느 것이어도 되고, 이들을 조합한 양태여도 된다.Moreover, any of linear, branched chain, or cyclic|annular may be sufficient as the alkyl group part in the said alkoxy group, and the aspect which combined these may be sufficient as it.
Rc, Rd, Re, Rf, Rg로서의 아릴옥시기로서는, 탄소수 6~10의 아릴옥시기가 바람직하고, 구체적으로는 페녹시, 톨루일옥시, 1-나프톡시 등을 들 수 있다.As the aryloxy group for Rc, Rd, Re, Rf, or Rg, an aryloxy group having 6 to 10 carbon atoms is preferable, and phenoxy, toluyloxy, 1-naphthoxy, etc. are specifically mentioned.
Rc, Rd, Re, Rf, Rg로서의 알콕시카보닐기로서는, 탄소수 1~10의 알콕시카보닐기가 바람직하고, 구체적으로는 메톡시카보닐, 에톡시카보닐, 직쇄 또는 분기 프로폭시카보닐, 사이클로펜틸옥시카보닐, 사이클로헥실옥시카보닐 등을 들 수 있다.As the alkoxycarbonyl group for Rc, Rd, Re, Rf, or Rg, an alkoxycarbonyl group having 1 to 10 carbon atoms is preferable, and specifically, methoxycarbonyl, ethoxycarbonyl, straight-chain or branched propoxycarbonyl, and cyclopentyl. Oxycarbonyl, cyclohexyloxycarbonyl, etc. are mentioned.
Rc, Rd, Re, Rf, Rg로서의 아릴옥시카보닐기의 아릴옥시 부분으로서는, 상술한 아릴옥시기와 동일한 것을 들 수 있다.Examples of the aryloxy moiety of the aryloxycarbonyl group as Rc, Rd, Re, Rf, and Rg are the same as those of the aryloxy group described above.
보존 중의 산분해성기로서의 아세탈에스터기의 분해를 억제할 수 있어, 패터닝성의 저하를 방지하는 관점에서, 식 (IV)에 있어서의 Rc, Rd 중 적어도 1개가, 사이클로알킬기, 아릴기, 아랄킬기, 알콕시기, 아릴옥시기, 알콕시카보닐기, 아릴옥시카보닐기, 사이아노기, 또는, 할로젠 원자인 것이 바람직하고, 적어도 1개가, 아릴기인 것이 보다 바람직하다.At least one of Rc and Rd in formula (IV) is a cycloalkyl group, an aryl group, an aralkyl group, It is preferable that they are an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an aryloxycarbonyl group, a cyano group, or a halogen atom, and it is more preferable that at least one is an aryl group.
Rb로서의 2가의 연결기는, 예를 들면, 알킬렌기(바람직하게는 탄소수 1~8의 알킬렌기, 예를 들면, 메틸렌기, 에틸렌기, 프로필렌기, 뷰틸렌기, 헥실렌기 또는 옥틸렌기), 사이클로알킬렌기(바람직하게는 탄소수 3~15의 사이클로알킬렌기, 예를 들면, 사이클로펜틸렌기 또는 사이클로헥실렌기), -S-, -O-, -CO-, -CS-, -SO2-, -N(R0)-, 또는 이들의 2종 이상의 조합이며, 총 탄소수가 20 이하인 것이 바람직하다. 여기에서, R0은, 수소 원자 또는 알킬기(예를 들면 탄소수 1~8의 알킬기이며, 구체적으로는, 메틸기, 에틸기, 프로필기, n-뷰틸기, sec-뷰틸기, 헥실기 및 옥틸기 등)이다.The divalent linking group as Rb is, for example, an alkylene group (preferably an alkylene group having 1 to 8 carbon atoms, such as a methylene group, ethylene group, propylene group, butylene group, hexylene group or octylene group), cyclo An alkylene group (preferably a cycloalkylene group having 3 to 15 carbon atoms, for example, a cyclopentylene group or a cyclohexylene group), -S-, -O-, -CO-, -CS-, -SO 2 -, -N(R 0 )-, or a combination of two or more thereof, preferably having a total carbon number of 20 or less. Here, R 0 is a hydrogen atom or an alkyl group (for example, an alkyl group having 1 to 8 carbon atoms, specifically, a methyl group, an ethyl group, a propyl group, an n-butyl group, a sec-butyl group, a hexyl group, an octyl group, etc. )am.
Rb는, 단결합, 알킬렌기, 또는 알킬렌기와 -O-, -CO-, -CS- 및 -N(R0)- 중 적어도 하나의 조합으로 이루어지는 2가의 연결기가 바람직하고, 단결합, 알킬렌기, 또는 알킬렌기와 -O-의 조합으로 이루어지는 2가의 연결기가 보다 바람직하다. 여기에서, R0은 상술한 R0과 동일한 의미이다.Rb is preferably a single bond, an alkylene group, or a divalent linking group composed of a combination of at least one of an alkylene group and -O-, -CO-, -CS- and -N(R 0 )-, and a single bond, an alkylene group, A divalent linking group consisting of a combination of a rene group or an alkylene group and -O- is more preferred. Here, R 0 has the same meaning as the above-mentioned R 0 .
Q로서의 알킬기는, 예를 들면, 상술한 Ra로서의 알킬기와 동일하다.The alkyl group as Q is, for example, the same as the alkyl group as Ra described above.
Q로서의 지환기 및 방향환기로서는, 예를 들면, 상술한 Ra로서의 사이클로알킬기 및 아릴기를 들 수 있다. 그 탄소수는, 바람직하게는, 3~18이다. 또한, 본 발명에 있어서는, 복수의 방향환이 단결합을 개재하여 연결되어 이루어지는 기(예를 들면, 바이페닐기, 터페닐기)도 Q로서의 방향족기에 포함된다.Examples of the alicyclic group and aromatic ring group as Q include the cycloalkyl group and aryl group as Ra described above. The carbon number is preferably 3 to 18. In the present invention, a group formed by connecting a plurality of aromatic rings via a single bond (for example, a biphenyl group or a terphenyl group) is also included in the aromatic group as Q.
헤테로 원자를 포함하는 지환기 및 헤테로 원자를 포함하는 방향환기로서는, 예를 들면, 싸이이레인, 사이클로싸이올레인, 싸이오펜, 퓨란, 피롤, 벤조싸이오펜, 벤조퓨란, 벤조피롤, 트라이아진, 이미다졸, 벤즈이미다졸, 트라이아졸, 싸이아다이아졸, 싸이아졸 및 피롤리돈을 들 수 있다.As an alicyclic group containing a hetero atom and an aromatic ring group containing a hetero atom, for example, thylane, cyclothiolein, thiophene, furan, pyrrole, benzothiophene, benzofuran, benzopyrrole, triazine, imimi dazoles, benzimidazoles, triazoles, thiadiazoles, thiazoles and pyrrolidones.
Q로서의 지환기 및 방향환기는, 치환기를 갖고 있어도 되고, 예를 들면, 알킬기, 사이클로알킬기, 사이아노기, 할로젠 원자, 하이드록시기, 알콕시기, 카복시기, 알콕시카보닐기를 들 수 있다.The alicyclic group and aromatic ring group as Q may have a substituent, and examples thereof include an alkyl group, a cycloalkyl group, a cyano group, a halogen atom, a hydroxy group, an alkoxy group, a carboxy group, and an alkoxycarbonyl group.
(-Rb-Q)로서 특히 바람직하게는, 메틸기, 아릴옥시에틸기, 사이클로헥실에틸기 혹은 아릴에틸기이며, 용해성, 열안정성이 향상된다.Especially preferably, (-Rb-Q) is a methyl group, an aryloxyethyl group, a cyclohexylethyl group, or an arylethyl group, and solubility and thermal stability are improved.
Ra, Rb 및 Q 중 적어도 2개가 서로 결합하여 환을 형성하는 경우로서는, 예를 들면, Rb 및 Q 중 어느 하나와 Ra가 결합하여 프로필렌기 또는 뷰틸렌기를 형성하고, 산소 원자를 함유하는 5원환 또는 6원환을 형성하는 경우를 들 수 있다.When at least two of Ra, Rb, and Q are bonded to each other to form a ring, for example, any one of Rb and Q is bonded to Ra to form a propylene group or a butylene group, and a 5-membered ring containing an oxygen atom Or the case of forming a 6-membered ring is mentioned.
Ra, Rb 및 Q의 탄소수의 총합을 NC라고 표기하면, NC가 큰 경우에는 식 (III)으로 나타나는 기가 탈리하기 전후의, 수지의 알칼리 용해 속도 변화가 커지고, 용해 콘트라스트가 경조(硬調)화되어 해상성이 향상된다. NC의 범위로서는, 바람직하게는 2~20이며, 2~15가 특히 바람직하다. NC가 20 이하이면, 고분자 화합물의 유리 전이 온도가 저하되는 것이 억제되고, 또한 산분해성기로부터의 탈리물이 패턴 상에 부착되는 결함의 생성이 억제된다.If the total number of carbon atoms of Ra, Rb, and Q is expressed as N C , when N C is large, the change in the alkali dissolution rate of the resin before and after the group represented by formula (III) is desorbed becomes large, and the dissolution contrast becomes high. and the resolution is improved. The range of N C is preferably 2 to 20, particularly preferably 2 to 15. When N C is 20 or less, a decrease in the glass transition temperature of the polymer compound is suppressed, and generation of defects in which products desorbed from acid-decomposable groups adhere on patterns is suppressed.
Ra, Rb 및 Q 중 적어도 하나가, 전자 구인성기 내지는 전자 구인성기를 갖는 기인 것이 바람직하다. 이로써, 식 (1)로 나타나는 반복 단위를 갖는 수지에 있어서, 보존 중의 산분해성기의 분해를 억제할 수 있어, 패터닝성의 저하를 방지할 수 있다.It is preferable that at least one of Ra, Rb, and Q is an electron withdrawing group or a group having an electron withdrawing group. In this way, in the resin having the repeating unit represented by Formula (1), decomposition of the acid-decomposable group during storage can be suppressed, and deterioration in patterning properties can be prevented.
전자 구인성기로서는, 예를 들면, 알콕시기, 아릴기, 알켄일기, 알카인일기, 할로젠 원자, 아실기, 아릴카보닐기, 알콕시카보닐기, 아릴옥시카보닐기, 아릴옥시기, 나이트릴기(사이아노기), 알킬설폰일기, 아릴설폰일기, 나이트로기 등을 들 수 있으며, 알콕시기, 아릴기, 아실기인 것이 바람직하다.As an electron withdrawing group, for example, an alkoxy group, an aryl group, an alkenyl group, an alkynyl group, a halogen atom, an acyl group, an arylcarbonyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an aryloxy group, a nitrile group (between ano group), an alkyl sulfonyl group, an aryl sulfonyl group, a nitro group, and the like, and an alkoxy group, an aryl group, and an acyl group are preferable.
이하에, 산분해성기로서의 아세탈에스터기를 구성하는 식 (III)으로 나타나는 기의 구체예를 나타내지만, 이들에 한정되는 것은 아니다. *는 다른 구조와의 결합 부위를 나타낸다.Although the specific example of the group represented by Formula (III) which comprises the acetal ester group as an acid-decomposable group below is shown, it is not limited to these. * indicates a binding site with another structure.
[화학식 19][Formula 19]
[화학식 20][Formula 20]
[화학식 21][Formula 21]
식 (1)에 있어서의 -CO2R3의 열분해 온도가 100~220℃인 것이 바람직하고, 120~210℃인 것이 보다 바람직하며, 140~200℃인 것이 특히 바람직하다. 열분해 온도는, 예를 들면, 시차열 천칭 분석으로부터 구할 수 있다.The thermal decomposition temperature of -CO 2 R 3 in Formula (1) is preferably 100 to 220°C, more preferably 120 to 210°C, and particularly preferably 140 to 200°C. The thermal decomposition temperature can be obtained from, for example, differential thermal balance analysis.
열분해 온도가 상기 하한 이상이면, 본 발명의 수지 조성물의 보존 안정성이 향상된다. 또, 열분해 온도가 상기 상한 이하이면, 본 발명의 수지 조성물의 노광 감도가 향상된다.When the thermal decomposition temperature is equal to or higher than the lower limit, the storage stability of the resin composition of the present invention is improved. Moreover, the exposure sensitivity of the resin composition of this invention improves that a thermal decomposition temperature is below the said upper limit.
상술한 바와 같은 열분해 온도를 달성할 수 있는 R3의 구조로서 구체적으로는, 상기 식 (A1) 중의 Rx1~Rx3 중, 적어도 하나가 하기 식 (VI)으로 나타나는 기인 구조, 상기 식 (III) 중의 Ra가 상기 식 (IV) 또는 하기 식 (VII)로 나타나는 기인 구조 등을 들 수 있다.Specifically, as the structure of R 3 capable of achieving the thermal decomposition temperature as described above, at least one of Rx 1 to Rx 3 in the formula (A1) is a group represented by the following formula (VI), the formula (III ) in which Ra is a group represented by the above formula (IV) or the following formula (VII); and the like.
[화학식 22][Formula 22]
상기 식 (VI) 중, R7~R8은, 각각 독립적으로, 수소 원자, 알킬기(직쇄 혹은 분기) 또는 사이클로알킬기(단환 혹은 다환)를 나타내고, R7~R8 중 적어도 하나는 수소 원자이다. *는 다른 구조와의 결합 부위를 나타낸다.In the formula (VI), each of R 7 to R 8 independently represents a hydrogen atom, an alkyl group (straight or branched) or a cycloalkyl group (monocyclic or polycyclic), and at least one of R 7 to R 8 is a hydrogen atom. . * indicates a binding site with another structure.
[화학식 23][Formula 23]
상기 식 (VII) 중, Rh는 알킬기, 사이클로알킬기, 아릴기, 아랄킬기, 알콕시기, 아릴옥시기, 알콕시카보닐기, 아릴옥시카보닐기, 사이아노기 또는 할로젠 원자를 나타낸다. *는 다른 구조와의 결합 부위를 나타낸다.In the formula (VII), Rh represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an aryloxycarbonyl group, a cyano group, or a halogen atom. * indicates a binding site with another structure.
R7~R8에 대한 알킬기, 사이클로알킬기의 구체예, 바람직한 예로서는, Rx1~Rx3에 대한 알킬기, 사이클로알킬기로서 상술한 구체예, 바람직한 예와 동일한 것을 들 수 있다.Specific examples and preferred examples of the alkyl group and cycloalkyl group for R 7 to R 8 include the same specific examples and preferred examples as the alkyl group and cycloalkyl group for Rx 1 to Rx 3 described above.
Rh로서의 알킬기, 사이클로알킬기, 아릴기, 아랄킬기 또는 알콕시기는 상기 R36에 대한 알킬기, 사이클로알킬기, 아릴기, 아랄킬기로서 상술한 것과 동일한 것을 들 수 있다.Examples of the alkyl group, cycloalkyl group, aryl group, aralkyl group or alkoxy group as Rh include those described above as the alkyl group, cycloalkyl group, aryl group, or aralkyl group for R 36 .
Rh로서의 알콕시기로서는, 탄소수 1~20의 알콕시기가 바람직하고, 탄소수 1~6의 알콕시기가 보다 바람직하다.As an alkoxy group as Rh, a C1-C20 alkoxy group is preferable, and a C1-C6 alkoxy group is more preferable.
또, 상기 알콕시기에 있어서의 알킬기부는 직쇄상, 분기쇄상 또는 환상 중 어느 것이어도 되고, 이들을 조합한 양태여도 된다.Moreover, any of linear, branched chain, or cyclic|annular may be sufficient as the alkyl group part in the said alkoxy group, and the aspect which combined these may be sufficient as it.
Rh로서의 아릴옥시기로서는, 탄소수 6~10의 아릴옥시기가 바람직하고, 구체적으로는 페녹시, 톨루일옥시, 1-나프톡시 등을 들 수 있다.As the aryloxy group as Rh, an aryloxy group having 6 to 10 carbon atoms is preferable, and phenoxy, toluyloxy, 1-naphthoxy, etc. are specifically mentioned.
Rh로서의 알콕시카보닐기로서는, 탄소수 1~10의 알콕시카보닐기가 바람직하고, 구체적으로는 메톡시카보닐, 에톡시카보닐, 직쇄 또는 분기 프로폭시카보닐, 사이클로펜틸옥시카보닐, 사이클로헥실옥시카보닐 등을 들 수 있다.As the alkoxycarbonyl group for Rh, an alkoxycarbonyl group having 1 to 10 carbon atoms is preferable, and specifically, methoxycarbonyl, ethoxycarbonyl, straight-chain or branched propoxycarbonyl, cyclopentyloxycarbonyl, cyclohexyloxycarbonyl Neil et al.
Rh로서의 아릴옥시카보닐기의 아릴옥시 부분으로서는, 상술한 아릴옥시기와 동일한 것을 들 수 있다.Examples of the aryloxy moiety of the aryloxycarbonyl group as Rh include the same as the aryloxy group described above.
또, 식 (1) 중의 R3은 산의 작용에 의하여 분해되어 알칼리 가용성기를 발생하는 기와는 상이한 유기기여도 된다.In addition, R 3 in Formula (1) may be an organic group different from a group that is decomposed by the action of an acid to generate an alkali-soluble group.
이와 같은 유기기로서는, 본 발명의 효과가 얻어지는 범위 내에 있어서 특별히 제한 없이 사용할 수 있지만, 직쇄 또는 분기쇄상의 알킬기, 사이클로알킬기, 아릴기, 또는, 폴리알킬렌옥시기 등을 들 수 있다. 이들 기의 바람직한 양태는, 상술한 R36에 있어서의 이들 기의 바람직한 양태와 동일하다.As such an organic group, it can be used without particular limitation within the range in which the effects of the present invention can be obtained, but a straight-chain or branched-chain alkyl group, a cycloalkyl group, an aryl group, or a polyalkyleneoxy group is exemplified. Preferred aspects of these groups are the same as those for these groups for R 36 described above.
본 발명에 있어서는, R3에 있어서 수소 원자와 유기기를 혼재시킬 수 있다. 수지 중의 전체 R3에 대하여 유기기의 비율이 100몰%~20몰%인 것이 바람직하고, 유기기의 비율이 100몰%~40몰%가 유기기인 것이 보다 바람직하다. 이 R3의 수소 원자와 유기기의 양을 조정함으로써, 알칼리 수용액에 대한 용해 속도가 변화하므로, 이 조정에 의하여 적절한 용해 속도를 가진 수지 조성물을 얻을 수 있다.In the present invention, a hydrogen atom and an organic group may be mixed in R 3 . It is preferable that the ratio of organic groups is 100 mol% - 20 mol% with respect to all R3 in resin, and it is more preferable that the ratio of organic groups is 100 mol% - 40 mol% organic groups. By adjusting the amount of hydrogen atoms and organic groups of this R 3 , the dissolution rate in aqueous alkali solution changes, so that a resin composition having an appropriate dissolution rate can be obtained by this adjustment.
수지 중의 모든 -CO2R3 중, 산의 작용에 의하여 분해되어 알칼리 가용성기를 발생하는 기가 차지하는 비율, 이른바 보호율은, 40~100%인 것이 바람직하고, 45~100%인 것이 보다 바람직하다.Among all -CO 2 R 3 in the resin, the ratio occupied by groups generating alkali-soluble groups by decomposition by the action of acid, so-called protection rate, is preferably 40 to 100%, more preferably 45 to 100%.
또, 본 발명에 있어서는, 식 (1)로 나타나는 반복 단위를 주성분으로 하는 폴리머의 말단에 말단 밀봉제를 반응시킬 수 있다. 말단 밀봉제는, 모노알코올, 페놀, 싸이올, 싸이오페놀, 모노아민, 산무수물, 모노카복실산, 모노산 클로라이드 화합물, 모노 활성 에스터 화합물 등을 이용할 수 있다. 말단 밀봉제를 반응시킴으로써, 반복 단위의 반복수, 즉 분자량을 바람직한 범위로 제어할 수 있는 점에서 바람직하다. 또한, 말단 밀봉제에 의하여, 말단 아민과 발생산의 중화에 의한 산 실활을 억제할 수 있다. 또, 말단에 말단 밀봉제를 반응시킴으로써, 말단기로서 다양한 유기기, 예를 들면 탄소-탄소 불포화 결합을 갖는 가교 반응성기를 도입할 수 있다.Moreover, in this invention, the terminal blocker can be made to react with the terminal of the polymer which has the repeating unit represented by Formula (1) as a main component. As the terminal blocker, monoalcohols, phenols, thiols, thiophenols, monoamines, acid anhydrides, monocarboxylic acids, monoacid chloride compounds, monoactive ester compounds and the like can be used. By reacting the end capping agent, the number of repetitions of the repeating unit, that is, the molecular weight can be controlled within a preferred range, which is preferable. In addition, the acid deactivation due to neutralization of the terminal amine and the generated acid can be suppressed by the terminal blocker. In addition, various organic groups such as crosslinking reactive groups having carbon-carbon unsaturated bonds can be introduced as terminal groups by reacting terminal end capping agents.
말단 밀봉제에 이용되는 모노알코올로서는, 메탄올, 에탄올, 프로판올, 뷰탄올, 헥산올, 옥탄올, 도데신올, 벤질알코올, 2-페닐에탄올, 2-메톡시에탄올, 2-클로로메탄올, 퍼퓨릴알코올 등의 1급 알코올, 아이소프로판올, 2-뷰탄올, 사이클로헥실알코올, 사이클로펜탄올, 1-메톡시-2-프로판올 등의 2급 알코올, t-뷰틸알코올, 아다만테인알코올 등의 3급 알코올을 들 수 있다. 페놀류의 바람직한 화합물로서는, 페놀, 메톡시페놀, 메틸페놀, 나프탈렌-1-올, 나프탈렌-2-올, 하이드록시스타이렌 등의 페놀류 등을 들 수 있다.As the monoalcohol used for the end capping agent, methanol, ethanol, propanol, butanol, hexanol, octanol, dodecinol, benzyl alcohol, 2-phenylethanol, 2-methoxyethanol, 2-chloromethanol, furfuryl alcohol Primary alcohols such as isopropanol, 2-butanol, cyclohexyl alcohol, cyclopentanol, 1-methoxy-2-propanol, etc., secondary alcohols such as t-butyl alcohol, tertiary alcohols such as adamantane alcohol can be heard Preferred compounds of phenols include phenols such as phenol, methoxyphenol, methylphenol, naphthalen-1-ol, naphthalen-2-ol, and hydroxystyrene.
말단 밀봉제에 이용되는 모노아민은, 5-아미노-8-하이드록시퀴놀린, 4-아미노-8-하이드록시퀴놀린, 1-하이드록시-8-아미노나프탈렌, 1-하이드록시-7-아미노나프탈렌, 1-하이드록시-6-아미노나프탈렌, 1-하이드록시-5-아미노나프탈렌, 1-하이드록시-4-아미노나프탈렌, 1-하이드록시-3-아미노나프탈렌, 1-하이드록시-2-아미노나프탈렌, 1-아미노-7-하이드록시나프탈렌, 2-하이드록시-7-아미노나프탈렌, 2-하이드록시-6-아미노나프탈렌, 2-하이드록시-5-아미노나프탈렌, 2-하이드록시-4-아미노나프탈렌, 2-하이드록시-3-아미노나프탈렌, 1-아미노-2-하이드록시나프탈렌, 1-카복시-8-아미노나프탈렌, 1-카복시-7-아미노나프탈렌, 1-카복시-6-아미노나프탈렌, 1-카복시-5-아미노나프탈렌, 1-카복시-4-아미노나프탈렌, 1-카복시-3-아미노나프탈렌, 1-카복시-2-아미노나프탈렌, 1-아미노-7-카복시나프탈렌, 2-카복시-7-아미노나프탈렌, 2-카복시-6-아미노나프탈렌, 2-카복시-5-아미노나프탈렌, 2-카복시-4-아미노나프탈렌, 2-카복시-3-아미노나프탈렌, 1-아미노-2-카복시나프탈렌, 2-아미노니코틴산, 4-아미노니코틴산, 5-아미노니코틴산, 6-아미노니코틴산, 4-아미노살리실산, 5-아미노살리실산, 6-아미노살리실산, 3-아미노-O-톨루산, 암멜리드, 2-아미노벤조산, 3-아미노벤조산, 4-아미노벤조산, 2-아미노벤젠설폰산, 3-아미노벤젠설폰산, 4-아미노벤젠설폰산, 3-아미노-4,6-다이하이드록시피리미딘, 2-아미노페놀, 3-아미노페놀, 4-아미노페놀, 5-아미노-8-머캅토퀴놀린, 4-아미노-8-머캅토퀴놀린, 1-머캅토-8-아미노나프탈렌, 1-머캅토-7-아미노나프탈렌, 1-머캅토-6-아미노나프탈렌, 1-머캅토-5-아미노나프탈렌, 1-머캅토-4-아미노나프탈렌, 1-머캅토-3-아미노나프탈렌, 1-머캅토-2-아미노나프탈렌, 1-아미노-7-머캅토나프탈렌, 2-머캅토-7-아미노나프탈렌, 2-머캅토-6-아미노나프탈렌, 2-머캅토-5-아미노나프탈렌, 2-머캅토-4-아미노나프탈렌, 2-머캅토-3-아미노나프탈렌, 1-아미노-2-머캅토나프탈렌, 3-아미노-4,6-다이 머캅토 피리미딘, 2-아미노싸이오페놀, 3-아미노싸이오페놀, 4-아미노싸이오페놀, 2-에타인일아닐린, 3-에타인일아닐린, 4-에타인일아닐린, 2,4-다이에타인일아닐린, 2,5-다이에타인일아닐린, 2,6-다이에타인일아닐린, 3,4-다이에타인일아닐린, 3,5-다이에타인일아닐린, 1-에타인일-2-아미노나프탈렌, 1-에타인일-3-아미노나프탈렌, 1-에타인일-4-아미노나프탈렌, 1-에타인일-5-아미노나프탈렌, 1-에타인일-6-아미노나프탈렌, 1-에타인일-7-아미노나프탈렌, 1-에타인일-8-아미노나프탈렌, 2-에타인일-1-아미노나프탈렌, 2-에타인일-3-아미노나프탈렌, 2-에타인일-4-아미노나프탈렌, 2-에타인일-5-아미노나프탈렌, 2-에타인일-6-아미노나프탈렌, 2-에타인일-7-아미노나프탈렌, 2-에타인일-8-아미노나프탈렌, 3,5-다이에타인일-1-아미노나프탈렌, 3,5-다이에타인일-2-아미노나프탈렌, 3,6-다이에타인일-1-아미노나프탈렌, 3,6-다이에타인일-2-아미노나프탈렌, 3,7-다이에타인일-1-아미노나프탈렌, 3,7-다이에타인일-2-아미노나프탈렌, 4,8-다이에타인일-1-아미노나프탈렌, 4,8-다이에타인일-2-아미노나프탈렌, 아닐린 등을 들 수 있지만, 이들에 한정되는 것은 아니다.The monoamine used for the end capping agent is 5-amino-8-hydroxyquinoline, 4-amino-8-hydroxyquinoline, 1-hydroxy-8-aminonaphthalene, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 1-hydroxy-3-aminonaphthalene, 1-hydroxy-2-aminonaphthalene, 1-amino-7-hydroxynaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 2-hydroxy-4-aminonaphthalene, 2-hydroxy-3-aminonaphthalene, 1-amino-2-hydroxynaphthalene, 1-carboxy-8-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy -5-aminonaphthalene, 1-carboxy-4-aminonaphthalene, 1-carboxy-3-aminonaphthalene, 1-carboxy-2-aminonaphthalene, 1-amino-7-carboxynaphthalene, 2-carboxy-7-aminonaphthalene , 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-carboxy-4-aminonaphthalene, 2-carboxy-3-aminonaphthalene, 1-amino-2-carboxynaphthalene, 2-aminonicotinic acid , 4-aminonicotinic acid, 5-aminonicotinic acid, 6-aminonicotinic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 3-amino-O-toluic acid, ammelide, 2-aminobenzoic acid, 3- Aminobenzoic acid, 4-aminobenzoic acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid, 3-amino-4,6-dihydroxypyrimidine, 2-aminophenol, 3- Aminophenol, 4-aminophenol, 5-amino-8-mercaptoquinoline, 4-amino-8-mercaptoquinoline, 1-mercapto-8-aminonaphthalene, 1-mercapto-7-aminonaphthalene, 1- Mercapto-6-aminonaphthalene, 1-mercapto-5-aminonaphthalene, 1-mercapto-4-aminonaphthalene, 1-mercapto-3-aminonaphthalene, 1-mercapto-2-aminonaphthalene, 1- Amino-7-mercaptonaphthalene, 2-mercapto-7-aminonaphthalene, 2-mercapto-6-aminonaphthalene, 2-mercapto-5-aminonaphthalene, 2-mercapto-4-a Minonaphthalene, 2-mercapto-3-aminonaphthalene, 1-amino-2-mercaptonaphthalene, 3-amino-4,6-dimercapto pyrimidine, 2-aminothiophenol, 3-aminothiophenol , 4-aminothiophenol, 2-ethynylaniline, 3-ethynylaniline, 4-ethynylaniline, 2,4-diethynylaniline, 2,5-diethynylaniline, 2 ,6-Diethynylaniline, 3,4-Diethynylaniline, 3,5-Diethynylaniline, 1-ethynyl-2-aminonaphthalene, 1-ethynyl-3-aminonaphthalene , 1-ethynyl-4-aminonaphthalene, 1-ethynyl-5-aminonaphthalene, 1-ethynyl-6-aminonaphthalene, 1-ethynyl-7-aminonaphthalene, 1-ethynyl -8-aminonaphthalene, 2-ethynyl-1-aminonaphthalene, 2-ethynyl-3-aminonaphthalene, 2-ethynyl-4-aminonaphthalene, 2-ethynyl-5-aminonaphthalene, 2-ethynyl-6-aminonaphthalene, 2-ethynyl-7-aminonaphthalene, 2-ethynyl-8-aminonaphthalene, 3,5-diethynyl-1-aminonaphthalene, 3,5 -Diethynyl-2-aminonaphthalene, 3,6-diethynyl-1-aminonaphthalene, 3,6-diethynyl-2-aminonaphthalene, 3,7-diethynyl-1- Aminonaphthalene, 3,7-diethynyl-2-aminonaphthalene, 4,8-diethynyl-1-aminonaphthalene, 4,8-diethynyl-2-aminonaphthalene, aniline, etc. However, it is not limited to these.
이들 중, 5-아미노-8-하이드록시퀴놀린, 1-하이드록시-7-아미노나프탈렌, 1-하이드록시-6-아미노나프탈렌, 1-하이드록시-5-아미노나프탈렌, 1-하이드록시-4-아미노나프탈렌, 2-하이드록시-7-아미노나프탈렌, 2-하이드록시-6-아미노나프탈렌, 2-하이드록시-5-아미노나프탈렌, 1-카복시-7-아미노나프탈렌, 1-카복시-6-아미노나프탈렌, 1-카복시-5-아미노나프탈렌, 2-카복시-7-아미노나프탈렌, 2-카복시-6-아미노나프탈렌, 2-카복시-5-아미노나프탈렌, 2-아미노벤조산, 3-아미노벤조산, 4-아미노벤조산, 4-아미노살리실산, 5-아미노살리실산, 6-아미노살리실산, 2-아미노벤젠설폰산, 3-아미노벤젠설폰산, 4-아미노벤젠설폰산, 3-아미노-4,6-다이하이드록시피리미딘, 2-아미노페놀, 3-아미노페놀, 4-아미노페놀, 2-아미노싸이오페놀, 3-아미노싸이오페놀, 4-아미노싸이오페놀, 3-에타인일아닐린, 4-에타인일아닐린, 3,4-다이에타인일아닐린, 3,5-다이에타인일아닐린, 아닐린 등이 바람직하다.Among these, 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4- Aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene , 1-carboxy-5-aminonaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-amino Benzoic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid, 3-amino-4,6-dihydroxypyr Midine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-aminothiophenol, 3-aminothiophenol, 4-aminothiophenol, 3-ethynylaniline, 4-ethynyl Aniline, 3,4-diethynylaniline, 3,5-diethynylaniline, aniline, etc. are preferable.
말단 밀봉제로서 이용되는 산무수물, 모노카복실산, 모노산 클로라이드 화합물, 활성 에스터 화합물은, 무수 프탈산, 무수 말레산, 무수 나드산, 사이클로헥세인다이카복실산 무수물, 3-하이드록시프탈산 무수물 등의 산무수물, 2-카복시페놀, 3-카복시페놀, 4-카복시페놀, 2-카복시싸이오페놀, 3-카복시싸이오페놀, 4-카복시싸이오페놀, 1-하이드록시-8-카복시나프탈렌, 1-하이드록시-7-카복시나프탈렌, 1-하이드록시-6-카복시나프탈렌, 1-하이드록시-5-카복시나프탈렌, 1-하이드록시-4-카복시나프탈렌, 1-하이드록시-3-카복시나프탈렌, 1-하이드록시-2-카복시나프탈렌, 1-머캅토-8-카복시나프탈렌, 1-머캅토-7-카복시나프탈렌, 1-머캅토-6-카복시나프탈렌, 1-머캅토-5-카복시나프탈렌, 1-머캅토-4-카복시나프탈렌, 1-머캅토-3-카복시나프탈렌, 1-머캅토-2-카복시나프탈렌, 2-카복시벤젠설폰산, 3-카복시벤젠설폰산, 4-카복시벤젠설폰산, 2-에타인일벤조산, 3-에타인일벤조산, 4-에타인일벤조산, 2,4-다이에타인일벤조산, 2,5-다이에타인일벤조산, 2,6-다이에타인일벤조산, 3,4-다이에타인일벤조산, 3,5-다이에타인일벤조산, 2-에타인일-1-나프토산, 3-에타인일-1-나프토산, 4-에타인일-1-나프토산, 5-에타인일-1-나프토산, 6-에타인일-1-나프토산, 7-에타인일-1-나프토산, 8-에타인일-1-나프토산, 2-에타인일-2-나프토산, 3-에타인일-2-나프토산, 4-에타인일-2-나프토산, 5-에타인일-2-나프토산, 6-에타인일-2-나프토산, 7-에타인일-2-나프토산, 8-에타인일-2-나프토산 등의 모노카복실산류 및 이들 카복시기가 산 클로라이드화된 모노산 클로라이드 화합물, 및 테레프탈산, 프탈산, 말레산, 사이클로헥세인다이카복실산, 3-하이드록시프탈산, 5-노보넨-2,3-다이카복실산, 1,2-다이카복시나프탈렌, 1,3-다이카복시나프탈렌, 1,4-다이카복시나프탈렌, 1,5-다이카복시나프탈렌, 1,6-다이카복시나프탈렌, 1,7-다이카복시나프탈렌, 1,8-다이카복시나프탈렌, 2,3-다이카복시나프탈렌, 2,6-다이카복시나프탈렌, 2,7-다이카복시나프탈렌 등의 다이카복실산류의 모노카복시기만이 산 클로라이드화된 모노산 클로라이드 화합물, 모노산 클로라이드 화합물과 N-하이드록시벤조트라이아졸이나 N-하이드록시-5-노보넨-2,3-다이카복시이미드의 반응에 의하여 얻어지는 활성 에스터 화합물 등을 들 수 있다.Acid anhydrides, monocarboxylic acids, monoacid chloride compounds, and active ester compounds used as terminal blockers are acid anhydrides such as phthalic anhydride, maleic anhydride, nadic anhydride, cyclohexanedicarboxylic acid anhydride, and 3-hydroxyphthalic anhydride. , 2-carboxyphenol, 3-carboxyphenol, 4-carboxyphenol, 2-carboxythiophenol, 3-carboxythiophenol, 4-carboxythiophenol, 1-hydroxy-8-carboxynaphthalene, 1-hydroxy Roxy-7-carboxynaphthalene, 1-hydroxy-6-carboxynaphthalene, 1-hydroxy-5-carboxynaphthalene, 1-hydroxy-4-carboxynaphthalene, 1-hydroxy-3-carboxynaphthalene, 1-hydroxy Roxy-2-carboxynaphthalene, 1-mercapto-8-carboxynaphthalene, 1-mercapto-7-carboxynaphthalene, 1-mercapto-6-carboxynaphthalene, 1-mercapto-5-carboxynaphthalene, 1-mer Capto-4-carboxynaphthalene, 1-mercapto-3-carboxynaphthalene, 1-mercapto-2-carboxynaphthalene, 2-carboxybenzenesulfonic acid, 3-carboxybenzenesulfonic acid, 4-carboxybenzenesulfonic acid, 2- Ethanylbenzoic acid, 3-ethynylbenzoic acid, 4-ethynylbenzoic acid, 2,4-diethynylbenzoic acid, 2,5-diethynylbenzoic acid, 2,6-diethynylbenzoic acid, 3 ,4-diethynylbenzoic acid, 3,5-diethynylbenzoic acid, 2-ethynyl-1-naphthoic acid, 3-ethynyl-1-naphthoic acid, 4-ethynyl-1-naphthoic acid Tosan, 5-ethynyl-1-naphthoic acid, 6-ethynyl-1-naphthoic acid, 7-ethynyl-1-naphthoic acid, 8-ethynyl-1-naphthoic acid, 2-ethyne 1-2-naphthoic acid, 3-ethynyl-2-naphthoic acid, 4-ethynyl-2-naphthoic acid, 5-ethynyl-2-naphthoic acid, 6-ethynyl-2-naphthoic acid , 7-ethynyl-2-naphthoic acid, monocarboxylic acids such as 8-ethynyl-2-naphthoic acid, monoacid chloride compounds in which these carboxy groups are acid chlorides, and terephthalic acid, phthalic acid, maleic acid, cyclohexyl Seindicarboxylic acid, 3-hydroxyphthalic acid, 5-norbornene-2,3-dicarboxylic acid, 1,2-dicarboxynaphthalene, 1,3-dicarboxynaphthalene, 1,4-dicarboxynaphthalene, 1,5- Dicarboxynaphthalene, 1,6-dicarboxynaphthalene, 1,7-dicarboxynaphthalene, 1,8-dicarboxy Monoacid chloride compounds and monoacid chloride compounds in which only the monocarboxy groups of dicarboxylic acids such as cinaphthalene, 2,3-dicarboxynaphthalene, 2,6-dicarboxynaphthalene, and 2,7-dicarboxynaphthalene are acid chlorides Active ester compounds obtained by reaction of N-hydroxybenzotriazole and N-hydroxy-5-norbornene-2,3-dicarboximide, and the like are exemplified.
이들 중, 무수 프탈산, 무수 말레산, 무수 나드산, 사이클로헥세인다이카복실산 무수물, 3-하이드록시프탈산 무수물 등의 산무수물, 3-카복시페놀, 4-카복시페놀, 3-카복시싸이오페놀, 4-카복시싸이오페놀, 1-하이드록시-7-카복시나프탈렌, 1-하이드록시-6-카복시나프탈렌, 1-하이드록시-5-카복시나프탈렌, 1-머캅토-7-카복시나프탈렌, 1-머캅토-6-카복시나프탈렌, 1-머캅토-5-카복시나프탈렌, 3-카복시벤젠설폰산, 4-카복시벤젠설폰산, 3-에타인일벤조산, 4-에타인일벤조산, 3,4-다이에타인일벤조산, 3,5-다이에타인일벤조산 등의 모노카복실산류, 및 이들 카복시기가 산 클로라이드화된 모노산 클로라이드 화합물, 테레프탈산, 프탈산, 말레산, 사이클로헥세인다이카복실산, 1,5-다이카복시나프탈렌, 1,6-다이카복시나프탈렌, 1,7-다이카복시나프탈렌, 2,6-다이카복시나프탈렌 등의 다이카복실산류의 모노카복시기만이 산 클로라이드화된 모노산 클로라이드 화합물, 모노산 클로라이드 화합물과 N-하이드록시벤조트라이아졸이나 N-하이드록시-5-노보넨-2,3-다이카복시이미드의 반응에 의하여 얻어지는 활성 에스터 화합물 등이 바람직하다.Among these, acid anhydrides such as phthalic anhydride, maleic anhydride, nadic anhydride, cyclohexanedicarboxylic acid anhydride and 3-hydroxyphthalic anhydride, 3-carboxyphenol, 4-carboxyphenol, 3-carboxythiophenol, 4 -Carboxythiophenol, 1-hydroxy-7-carboxynaphthalene, 1-hydroxy-6-carboxynaphthalene, 1-hydroxy-5-carboxynaphthalene, 1-mercapto-7-carboxynaphthalene, 1-mercapto -6-carboxynaphthalene, 1-mercapto-5-carboxynaphthalene, 3-carboxybenzenesulfonic acid, 4-carboxybenzenesulfonic acid, 3-ethynylbenzoic acid, 4-ethynylbenzoic acid, 3,4-diene Monocarboxylic acids such as tyneylbenzoic acid and 3,5-diethyinylbenzoic acid, and monoacid chloride compounds in which these carboxy groups are acid chlorides, terephthalic acid, phthalic acid, maleic acid, cyclohexanedicarboxylic acid, 1,5-dicarboxylic acid Monoacid chloride compounds and monoacid chloride compounds in which only the monocarboxy groups of dicarboxylic acids such as carboxynaphthalene, 1,6-dicarboxynaphthalene, 1,7-dicarboxynaphthalene, and 2,6-dicarboxynaphthalene are acid chlorides An active ester compound obtained by reaction of N-hydroxybenzotriazole or N-hydroxy-5-norbornene-2,3-dicarboxyimide is preferable.
말단 밀봉제에 이용되는 모노아민의 도입 비율은, 전체 아민 성분에 대하여, 0.1~60몰%의 범위가 바람직하고, 특히 바람직하게는 5~50몰%이다. 말단 밀봉제로서 이용되는 산무수물, 모노카복실산, 모노산 클로라이드 화합물 및 모노 활성 에스터 화합물로부터 선택된 화합물의 도입 비율은, 다이아민 성분에 대하여, 0.1~100몰%의 범위가 바람직하고, 특히 바람직하게는 5~90몰%이다. 복수의 말단 밀봉제를 반응시킴으로써, 복수의 상이한 말단기를 도입해도 된다.The introduction ratio of the monoamine used in the end capping agent is preferably in the range of 0.1 to 60 mol%, particularly preferably 5 to 50 mol%, based on the total amine components. The introduction ratio of a compound selected from acid anhydrides, monocarboxylic acids, monoacid chloride compounds and monoactive ester compounds used as end capping agents is preferably in the range of 0.1 to 100 mol%, particularly preferably, with respect to the diamine component. It is 5-90 mol%. A plurality of different terminal groups may be introduced by reacting a plurality of end capping agents.
폴리머 중에 도입된 말단 밀봉제는, 이하의 방법으로 용이하게 검출할 수 있다. 예를 들면, 말단 밀봉제가 도입된 폴리머를 산성 용액에 용해하여, 폴리머의 구성 단위인 아민 성분과 산무수물 성분으로 분해한다. 이것을 가스 크로마토그래피(GC)나, NMR 측정함으로써, 말단 밀봉제를 용이하게 검출할 수 있다. 그 외에, 말단 밀봉제가 도입된 폴리머 성분을 직접, 열분해 가스 크로마토그래피(PGC)나 적외 스펙트럼 및 13CNMR 스펙트럼 측정하는 것에 의해서도, 용이하게 검출 가능하다.The terminal blocker introduced into the polymer can be easily detected by the following method. For example, a polymer into which an end capping agent is introduced is dissolved in an acidic solution to decompose into an amine component and an acid anhydride component, which are constituent units of the polymer. The terminal capping agent can be easily detected by gas chromatography (GC) or NMR measurement. In addition, it can be easily detected also by direct thermal decomposition gas chromatography (PGC) or infrared spectrum and 13 CNMR spectrum measurement of the polymer component into which the end capping agent has been introduced.
본 발명의 수지 조성물에 이용되는 특정 수지는, 식 (1)로 나타나는 반복 단위를 주성분으로 하는 것인 것이 바람직하다. 여기에서 말하는 주성분이란, 식 (1)로 나타나는 반복 단위를 70몰% 이상 함유하고 있는 것을 의미한다. 보다 바람직하게는 80몰% 이상, 가장 바람직하게는 90몰% 이상이다.It is preferable that the specific resin used for the resin composition of this invention has as a main component the repeating unit represented by Formula (1). A main component here means containing 70 mol% or more of the repeating unit represented by Formula (1). More preferably, it is 80 mol% or more, and most preferably 90 mol% or more.
본 발명에 이용되는 특정 수지는, 식 (1)로 나타나는 반복 단위와 다른 반복 단위의 공중합체여도 되고, 혹은, 식 (1)로 나타나는 반복 단위를 함유하는 복수의 수지의 혼합물이어도 된다.The specific resin used in the present invention may be a copolymer of a repeating unit represented by Formula (1) and another repeating unit, or may be a mixture of a plurality of resins containing a repeating unit represented by Formula (1).
나아가서는, 식 (1)로 나타나는 반복 단위를 함유하는 수지와 식 (1)로 나타나는 반복 단위를 함유하지 않는 수지(예를 들면, 식 (1)에 있어서, R3에 산의 작용에 의하여 분해되어 알칼리 가용성기를 발생하는 기를 갖지 않는 수지)의 혼합물이어도 된다. 이 경우, 식 (1)로 나타나는 반복 단위를 함유하는 수지는, 50질량% 이상 함유하는 것이 바람직하고, 75질량% 이상 함유하는 것이 보다 바람직하다.Furthermore, a resin containing a repeating unit represented by formula (1) and a resin not containing a repeating unit represented by formula (1) (for example, in formula (1), R 3 is decomposed by the action of an acid) and a resin having no group generating an alkali-soluble group) may be used. In this case, it is preferable to contain 50 mass % or more, and, as for resin containing the repeating unit represented by Formula (1), it is more preferable to contain 75 mass % or more.
공중합 혹은 혼합에 이용되는 반복 단위의 종류 및 양은, 최종 가열 처리에 의하여 얻어지는 폴리머의 내열성을 저해하지 않는 범위에서 선택하는 것이 바람직하다.The type and amount of repeating units used for copolymerization or mixing are preferably selected within a range that does not impair the heat resistance of the polymer obtained by the final heat treatment.
식 (1)로 나타나는 반복 단위를 포함하는 수지는, 알칼리 용해 속도, 막 물성 등의 관점에서, 질량 평균 분자량으로, 200,000 이하인 것이 바람직하고, 1,000~200,000이 보다 바람직하며, 2,000~100,000이 더 바람직하고, 3,000~100,000이 특히 바람직하다. 이 분자량 범위로 함으로써, 응력이 낮고, 기계 특성이 우수하며, 또한 현상 결함이 적은 해상성이 우수한 감광막을 얻을 수 있다.The resin containing the repeating unit represented by Formula (1) preferably has a mass average molecular weight of 200,000 or less, more preferably 1,000 to 200,000, and even more preferably 2,000 to 100,000, in terms of alkali dissolution rate, film properties, and the like. And, 3,000 to 100,000 is particularly preferred. By setting the molecular weight within this range, a photosensitive film having low stress, excellent mechanical properties, and excellent resolution with fewer development defects can be obtained.
분산도(분자량 분포)는, 1.0~7.0인 것이 바람직하고, 1.5~6.5인 것이 보다 바람직하다.The degree of dispersion (molecular weight distribution) is preferably 1.0 to 7.0, and more preferably 1.5 to 6.5.
본 명세서에 있어서, 분산도란, 중량 평균 분자량/수평균 분자량에 의하여 산출되는 값이다.In this specification, degree of dispersion is a value calculated by weight average molecular weight/number average molecular weight.
또, 수지 조성물이 복수 종의 특정 수지를 포함하는 경우, 적어도 1종의 특정 수지의 중량 평균 분자량, 수평균 분자량, 및, 분산도가 상기 범위인 것이 바람직하다. 또, 상기 복수 종의 특정 수지를 하나의 수지로서 산출한 중량 평균 분자량, 수평균 분자량, 및, 분산도가, 각각, 상기 범위 내인 것도 바람직하다.Moreover, when a resin composition contains multiple types of specific resin, it is preferable that the weight average molecular weight, number average molecular weight, and dispersion degree of at least 1 sort(s) of specific resin are the said range. Moreover, it is also preferable that the weight average molecular weight, the number average molecular weight, and the dispersion degree calculated as one resin of the said plurality of types of specific resin are each within the said range.
본 발명에 있어서의 특정 수지의 제조 방법은, 종래 공지의 방법이 모두 이용되어도 된다(예를 들면, 최신 폴리이미드~기초와 응용~(일본 폴리이미드 연구회 편) 참조.).As the method for producing the specific resin in the present invention, any conventionally known method may be used (for example, see Latest Polyimide -Basics and Applications- (Japanese Polyimide Research Society edition)).
예를 들면, 폴리아마이드산 또는 폴리아마이드산 에스터의 경우 저온 중에서 테트라카복실산 이무수물과 다이아민 화합물을 반응시키는 방법, 테트라카복실산 이무수물과 알코올에 의하여 다이에스터를 얻고, 그 후 아민과 축합제의 존재하에서 반응시키는 방법, 테트라카복실산 이무수물과 알코올에 의하여 다이에스터를 얻으며, 그 후 나머지의 다이카복실산을 산 클로라이드화하여, 아민과 반응시키는 방법, 측쇄의 카복시기의 일부를 열처리에 의하여 이미드화시키거나, 에스터화 시약 등을 이용하여 알킬에스터화시키거나 하는 방법 등이 있다.For example, in the case of polyamide acid or polyamide acid ester, a method of reacting tetracarboxylic acid dianhydride and a diamine compound at low temperature, obtaining a diester by tetracarboxylic acid dianhydride and alcohol, and then the presence of an amine and a condensing agent a method of reacting with tetracarboxylic acid dianhydride and an alcohol to obtain a diester, then converting the remaining dicarboxylic acid into an acid chloride and reacting with an amine, imidizing a part of the carboxy group of the side chain by heat treatment, or , a method of alkyl esterification using an esterification reagent or the like.
그중에서도, 유기 용매 중, 다이아민 화합물과 테트라카복실산 이무수물을 -20~50℃에서 수 분간 내지 수 일간 반응시킴으로써, 폴리아마이드산을 얻고, 이어서 염기성하 할라이드류와의 반응이나, 산성하 바이닐에터류와의 반응, 혹은 다이메틸폼아마이드의 다이알킬아세탈과의 반응에 의하여 식 (1)로 나타나는 반복 단위를 함유하는 수지를 얻는 방법(합성 방법 1), 또, Makromol. Chem., 194, 511~521(1993)에 기재되어 있는 바와 같은 산분해성기를 갖는 다이카복실산을 합성하며, 이어서 다이아민과 중축합시키는 방법(합성 방법 2)이, 비용, 조작 간편성, 성능 재현성의 면에서 바람직하다.Among them, polyamide acid is obtained by reacting a diamine compound and tetracarboxylic dianhydride at -20 to 50 ° C. for several minutes to several days in an organic solvent, followed by reaction with basic halides or acidic vinyl ethers A method for obtaining a resin containing a repeating unit represented by formula (1) by a reaction with or a reaction of dimethylformamide with a dialkyl acetal (synthetic method 1), also Makromol. Chem., 194, 511 to 521 (1993) synthesizes a dicarboxylic acid having an acid-decomposable group, followed by polycondensation with diamine (synthetic method 2), in terms of cost, ease of operation, and reproducibility of performance. preferred in terms of
(합성 방법 1)(Synthetic method 1)
[화학식 24][Formula 24]
(합성 방법 2)(Synthetic method 2)
[화학식 25][Formula 25]
상기 스킴 중, R1, R2 및 R3은 식 (1)에 있어서의 것과 동일한 의미이다.In the above scheme, R 1 , R 2 and R 3 have the same meaning as those in formula (1).
이 폴리아마이드산의 합성 반응에 사용할 수 있는 유기 용매로서는, N,N-다이메틸폼아마이드, N,N-다이메틸아세트아마이드, N-메틸-2-피롤리딘온, 1,3-다이메틸-2-이미다졸리딘온 등의 아마이드계 용매, 벤젠, 아니솔, 다이페닐에터, 나이트로벤젠, 벤조나이트릴, 피리딘과 같은 방향족계 용매, 클로로폼, 다이클로로메테인, 1,2-다이클로로에테인, 1,1,2,2-테트라클로로에테인과 같은 할로젠계 용매, 테트라하이드로퓨란, 다이옥세인, 다이글라임과 같은 에터계 용매 등을 예시할 수 있다. 그중에서도 아마이드계 용매가 바람직하고, 고분자량의 특정 수지를 얻을 수 있다.Examples of organic solvents that can be used in the synthesis reaction of polyamide acid include N,N-dimethylformamide, N,N-dimethylacetamide, N-methyl-2-pyrrolidinone, and 1,3-dimethyl- Amide solvents such as 2-imidazolidinone, benzene, anisole, diphenyl ether, nitrobenzene, benzonitrile, aromatic solvents such as pyridine, chloroform, dichloromethane, 1,2-di Halogen solvents such as chloroethane and 1,1,2,2-tetrachloroethane; ether solvents such as tetrahydrofuran, dioxane and diglyme; and the like can be exemplified. Among them, amide-based solvents are preferable, and specific resins having a high molecular weight can be obtained.
중합 반응에 이용하는 유기 용매의 비점은 50℃ 이상이 바람직하고, 보다 바람직하게는 100℃ 이상이며, 특히 바람직하게는 150℃ 이상이다.The boiling point of the organic solvent used in the polymerization reaction is preferably 50°C or higher, more preferably 100°C or higher, and particularly preferably 150°C or higher.
반응액 중의 용질의 농도는 바람직하게는 1~50질량%, 보다 바람직하게는 5~30질량%, 특히 바람직하게는 10~20질량%이다.The concentration of the solute in the reaction solution is preferably 1 to 50% by mass, more preferably 5 to 30% by mass, and particularly preferably 10 to 20% by mass.
특정 수지를 포함하는 수지 조성물은 반도체 기판 등의 기판 상에 제막되고, 수지 조성물이 감광성인 경우(상기 제막된 막이 감광막인 경우)에는 이어지는 노광 공정 및 현상 공정에 의하여 릴리프 패턴을 형성시킬 수 있다. 이 패턴의 가열 처리에 의하여, 특정 수지의 탈수 폐환이 발생하고, 폴리이미드 경화물이 얻어진다.A resin composition containing a specific resin is formed on a substrate such as a semiconductor substrate, and when the resin composition is photosensitive (when the formed film is a photosensitive film), a relief pattern can be formed by a subsequent exposure process and developing process. By the heat treatment of this pattern, dehydration ring closure of a specific resin occurs, and a cured polyimide is obtained.
본 발명에 있어서, 특정 수지는, 상기 특정 수지로 형성되는 막이 막두께 20μm당 i선 투과율이 1% 이상이며, 5% 이상인 것이 바람직하고, 10% 이상인 것이 보다 바람직하며, 10~80%인 것이 특히 바람직하다. 이 값이 1% 미만이면, 고해상도이며, 형상이 양호한 패턴을 형성할 수 있는 감광성 수지 조성물이 얻어지기 어렵다. i선(파장 365nm의 광)의 투과율은, 분광 광도계(예를 들면 히타치 U3410형, (주)히타치 세이사쿠쇼제)에 의하여 측정할 수 있다.In the present invention, the specific resin has an i-line transmittance of 1% or more, preferably 5% or more, more preferably 10% or more, and 10 to 80% per film thickness of the film formed of the specific resin. particularly preferred. When this value is less than 1%, it is difficult to obtain a photosensitive resin composition capable of forming a pattern with high resolution and good shape. Transmittance of i-line (light with a wavelength of 365 nm) can be measured with a spectrophotometer (for example, Hitachi U3410 model, manufactured by Hitachi Seisakusho Co., Ltd.).
또, 상기 식 (1)로 나타나는 반복 단위를 갖는 폴리아마이드산 에스터로부터 이미드 폐환하여 형성되는 폴리이미드 경화물의 잔류 응력은, 35MPa 이하인 것이 바람직하고, 30MPa 이하인 것이 보다 바람직하다.Further, the residual stress of the cured polyimide product formed by imide ring closure from the polyamide acid ester having the repeating unit represented by the above formula (1) is preferably 35 MPa or less, and more preferably 30 MPa or less.
또한, 폴리이미드막의 잔류 응력은, 상온(25℃)에 있어서, 박막 스트레스 측정 장치(예를 들면, 텐코사제, FLX-2320형)에 의하여 측정할 수 있다.In addition, the residual stress of the polyimide film can be measured at room temperature (25°C) with a thin film stress measuring device (for example, FLX-2320 type manufactured by Tencor Co., Ltd.).
이들의 특성을 충족시키는 상기 식 (1)로 나타나는 반복 단위를 갖는 수지는, 예를 들면 수지의 합성 시에 적절한 원료를 선택함으로써, 방향환 π공액 길이가 억제되며, 강직하고 또한 직선인 주쇄를 형성 가능한 구조를 갖게 된다.A resin having a repeating unit represented by the above formula (1) that satisfies these characteristics can have a rigid and straight main chain in which the aromatic ring π-conjugate length is suppressed, for example, by selecting an appropriate raw material at the time of synthesizing the resin. It has a structure that can be formed.
본 발명의 수지 조성물에 있어서의 특정 수지의 함유량은, 수지 조성물의 전고형분에 대하여 20질량% 이상인 것이 바람직하고, 30질량% 이상인 것이 보다 바람직하며, 40질량% 이상인 것이 더 바람직하고, 50질량% 이상인 것이 한층 바람직하다. 또, 본 발명의 수지 조성물에 있어서의 수지의 함유량은, 수지 조성물의 전고형분에 대하여, 99.5질량% 이하인 것이 바람직하고, 99질량% 이하인 것이 보다 바람직하며, 98질량% 이하인 것이 더 바람직하고, 97질량% 이하인 것이 한층 바람직하며, 95질량% 이하인 것이 보다 한층 바람직하다.The content of the specific resin in the resin composition of the present invention is preferably 20% by mass or more, more preferably 30% by mass or more, still more preferably 40% by mass or more, and 50% by mass with respect to the total solid content of the resin composition. More than that is more preferable. Further, the content of the resin in the resin composition of the present invention is preferably 99.5% by mass or less, more preferably 99% by mass or less, still more preferably 98% by mass or less, and 97% by mass or less with respect to the total solid content of the resin composition. It is more preferable that it is mass % or less, and it is still more preferable that it is 95 mass % or less.
또, 본 발명에 있어서, 특정 수지는, 1종으로 사용해도 되고, 복수 병용해도 된다.Moreover, in this invention, specific resin may be used by 1 type, and may use a plurality together.
<다른 수지><Other resins>
본 발명의 수지 조성물은, 상술한 특정 수지와, 특정 수지와는 상이한 다른 수지(이하, 간단히 "다른 수지"라고도 한다)를 포함해도 된다.The resin composition of the present invention may also contain the specific resin described above and another resin different from the specific resin (hereinafter, simply referred to as “other resin”).
다른 수지로서는, 페놀 수지, 폴리아마이드, 에폭시 수지, 폴리실록세인, 실록세인 구조를 포함하는 수지, (메트)아크릴 수지, (메트)아크릴아마이드 수지, 유레테인 수지, 뷰티랄 수지, 스타이릴 수지, 폴리에터 수지, 폴리에스터 수지 등을 들 수 있다.Examples of other resins include phenol resins, polyamides, epoxy resins, polysiloxanes, resins containing a siloxane structure, (meth)acrylic resins, (meth)acrylamide resins, urethane resins, butyral resins, styryl resins, A polyether resin, a polyester resin, etc. are mentioned.
예를 들면, (메트)아크릴 수지를 더 더함으로써, 도포성이 우수한 수지 조성물이 얻어지고, 또, 내용제성이 우수한 패턴(경화물)이 얻어진다.For example, by further adding a (meth)acrylic resin, a resin composition excellent in applicability is obtained, and a pattern (cured product) excellent in solvent resistance is obtained.
예를 들면, 후술하는 중합성 화합물 대신에, 또는, 후술하는 중합성 화합물에 더하여, 중량 평균 분자량이 20,000 이하인 중합성기가가 높은(예를 들면, 수지 1g에 있어서의 중합성기의 함유 몰양이 1×10-3몰/g 이상인) (메트)아크릴 수지를 수지 조성물에 첨가함으로써, 수지 조성물의 도포성, 패턴(경화물)의 내용제성 등을 향상시킬 수 있다.For example, instead of the polymerizable compound described later or in addition to the polymerizable compound described later, the weight average molecular weight has a high polymerizable value of 20,000 or less (for example, the molar amount of the polymerizable group in 1g of the resin is 1 × 10 −3 mol/g or more) (meth)acrylic resin can be added to the resin composition to improve the coating properties of the resin composition, the solvent resistance of the pattern (cured product), and the like.
본 발명의 수지 조성물이 다른 수지를 포함하는 경우, 다른 수지의 함유량은, 수지 조성물의 전고형분에 대하여, 0.01질량% 이상인 것이 바람직하고, 0.05질량% 이상인 것이 보다 바람직하며, 1질량% 이상인 것이 더 바람직하고, 2질량% 이상인 것이 한층 바람직하며, 5질량% 이상인 것이 보다 한층 바람직하고, 10질량% 이상인 것이 더 한층 바람직하다.When the resin composition of the present invention contains another resin, the content of the other resin is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, and still more preferably 1% by mass or more with respect to the total solid content of the resin composition. It is preferably 2% by mass or more, more preferably 5% by mass or more, even more preferably, and even more preferably 10% by mass or more.
또, 본 발명의 수지 조성물에 있어서의, 다른 수지의 함유량은, 수지 조성물의 전고형분에 대하여, 80질량% 이하인 것이 바람직하고, 75질량% 이하인 것이 보다 바람직하며, 70질량% 이하인 것이 더 바람직하고, 60질량% 이하인 것이 한층 바람직하며, 50질량% 이하인 것이 보다 한층 바람직하다.Further, the content of other resins in the resin composition of the present invention is preferably 80% by mass or less, more preferably 75% by mass or less, still more preferably 70% by mass or less, with respect to the total solid content of the resin composition. , it is more preferably 60% by mass or less, and even more preferably 50% by mass or less.
또, 본 발명의 수지 조성물의 바람직한 일 양태로서, 다른 수지의 함유량이 저함유량인 양태로 할 수도 있다. 상기 양태에 있어서, 다른 수지의 함유량은, 수지 조성물의 전고형분에 대하여, 20질량% 이하인 것이 바람직하고, 15질량% 이하인 것이 보다 바람직하며, 10질량% 이하인 것이 더 바람직하고, 5질량% 이하인 것이 한층 바람직하며, 1질량% 이하인 것이 보다 한층 바람직하다. 상기 함유량의 하한은 특별히 한정되지 않으며, 0질량% 이상이면 된다.Moreover, as a preferable aspect of the resin composition of the present invention, an aspect in which the content of other resins is low is also possible. In the above aspect, the content of the other resin is preferably 20% by mass or less, more preferably 15% by mass or less, still more preferably 10% by mass or less, and preferably 5% by mass or less with respect to the total solid content of the resin composition. It is still more preferable, and it is still more preferable that it is 1 mass % or less. The lower limit of the content is not particularly limited, and may be 0% by mass or more.
본 발명의 수지 조성물은, 다른 수지를 1종만 포함하고 있어도 되고, 2종 이상 포함하고 있어도 된다. 2종 이상 포함하는 경우, 합계량이 상기 범위가 되는 것이 바람직하다.The resin composition of this invention may contain only 1 type of other resin, and may contain 2 or more types. When including 2 or more types, it is preferable that a total amount becomes the said range.
〔광산발생제〕[mine generator]
본 발명의 수지 조성물은, 광산발생제를 포함한다.The resin composition of the present invention contains a photoacid generator.
광산발생제란, 200nm~900nm의 광조사에 의하여, 브뢴스테드산, 및, 루이스산 중 적어도 일방을 발생시키는 화합물을 나타낸다. 조사되는 광은, 바람직하게는 파장 300nm~450nm의 광이며, 보다 바람직하게는 330nm~420nm의 광이다. 광산발생제 단독 또는 증감제와의 병용에 있어서, 감광하여 산을 발생시키는 것이 가능한 광산발생제인 것이 바람직하다.A photoacid generator refers to a compound that generates at least one of a Bronsted acid and a Lewis acid when irradiated with light of 200 nm to 900 nm. Light to be irradiated is preferably light with a wavelength of 300 nm to 450 nm, more preferably light with a wavelength of 330 nm to 420 nm. In the case where the photoacid generator is used alone or in combination with a sensitizer, it is preferably a photoacid generator capable of generating an acid by photosensitization.
발생하는 산의 예로서는, 할로젠화 수소, 카복실산, 설폰산, 설핀산, 싸이오설핀산, 인산, 인산 모노에스터, 인산 다이에스터, 붕소 유도체, 인 유도체, 안티모니 유도체, 과산화 할로젠, 설폰아마이드 등을 바람직하게 들 수 있다.Examples of acids generated include hydrogen halide, carboxylic acid, sulfonic acid, sulfinic acid, thiosulfinic acid, phosphoric acid, phosphoric acid monoester, phosphoric acid diester, boron derivative, phosphorus derivative, antimony derivative, halogen peroxide, sulfonamide, etc. may be preferred.
본 발명의 수지 조성물에 이용되는 광산발생제로서는, 예를 들면, 퀴논다이아자이드 화합물, 옥심설포네이트 화합물, 유기 할로젠화 화합물, 유기 붕산염 화합물, 다이설폰 화합물, 오늄염 화합물 등을 들 수 있다.Examples of the photoacid generator used in the resin composition of the present invention include quinonediazide compounds, oxime sulfonate compounds, organic halogenated compounds, organic borate compounds, disulfone compounds, and onium salt compounds.
감도, 보존 안정성의 관점에서, 유기 할로젠 화합물, 옥심설포네이트 화합물, 오늄염 화합물이 바람직하고, 형성되는 막의 기계 특성 등으로부터, 옥심에스터가 바람직하다.From the viewpoints of sensitivity and storage stability, organic halogen compounds, oxime sulfonate compounds, and onium salt compounds are preferred, and oxime esters are preferred from the viewpoint of the mechanical properties of the formed film.
퀴논다이아자이드 화합물로서는, 1가 또는 다가의 하이드록시 화합물에 퀴논다이아자이드의 설폰산이 에스터 결합한 것, 1가 또는 다가의 아미노 화합물에 퀴논다이아자이드의 설폰산이 설폰아마이드 결합한 것, 폴리하이드록시폴리아미노 화합물에 퀴논다이아자이드의 설폰산이 에스터 결합 및/또는 설폰아마이드 결합한 것 등을 들 수 있다. 이들 폴리하이드록시 화합물, 폴리아미노 화합물, 폴리하이드록시폴리아미노 화합물의 모든 관능기가 퀴논다이아자이드로 치환되어 있지 않아도 되지만, 평균하여 관능기 전체의 40몰% 이상이 퀴논다이아자이드로 치환되어 있는 것이 바람직하다. 이와 같은 퀴논다이아자이드 화합물을 함유시킴으로써, 일반적인 자외선인 수은등의 i선(파장 365nm), h선(파장 405nm), g선(파장 436nm)에 감광하는 수지 조성물을 얻을 수 있다.Examples of the quinonediazide compound include those in which sulfonic acid of quinonediazide is ester bonded to a monovalent or polyvalent hydroxy compound, those in which sulfonic acid of quinonediazide is sulfonamide bonded to a monovalent or polyvalent amino compound, and polyhydroxypolyamino compounds and those in which sulfonic acid of quinonediazide is bonded to an ester bond and/or a sulfonamide bond. All functional groups of these polyhydroxy compounds, polyamino compounds, and polyhydroxypolyamino compounds do not have to be substituted with quinonediazide, but it is preferable that 40 mol% or more of the total functional groups on average are substituted with quinonediazide. . By containing such a quinonediazide compound, a resin composition sensitive to i-line (wavelength 365 nm), h-line (wavelength 405 nm), and g-line (wavelength 436 nm) of a mercury lamp, which are general ultraviolet rays, can be obtained.
하이드록시 화합물로서 구체적으로는, 페놀, 트라이하이드록시벤조페논, 4메톡시페놀, 아이소프로판올, 옥탄올, t-Bu알코올, 사이클로헥산올, 나프톨, Bis-Z, BisP-EZ, TekP-4 HBPA, TrisP-HAP, TrisP-PA, TrisP-SA, TrisOCR-PA, BisOCHP-Z, BisP-MZ, BisP-PZ, BisP-IPZ, BisOCP-IPZ, BisP-CP, BisRS-2 P, BisRS-3P, BisP-OCHP, 메틸렌트리스-FR-CR, BisRS-26X, DML-MBPC, DML-MBOC, DML-OCHP, DML-PCHP, DML-PC, DML-PTBP, DML-34X, DML-EP, DML-POP, 다이메틸올-BisOC-P, DML-PFP, DML-PSBP, DML-MTrisPC, TriML-P, TriML-35XL, TML-BP, TML-HQ, TML-pp-BPF, TML-BPA, TMOM-BP, HML-TPPHBA, HML-TPHAP(이상, 상품명, 혼슈 가가쿠 고교제), BIR-OC, BIP-PC, BIR-PC, BIR-PTBP, BIR-PCHP, BIP-BIOC-F, 4 PC, BIR-BIPC-F, TEP-BIP-A, 46DMOC, 46DMOEP, TM-BIP-A(이상, 상품명, 아사히 유키자이 고교제), 2,6-다이메톡시메틸-4-t-뷰틸페놀, 2,6-다이메톡시메틸-p-크레졸, 2,6-다이아세톡시메틸-p-크레졸, 나프톨, 테트라하이드록시벤조페논, 갈산 메틸에스터, 비스페놀 A, 비스페놀 E, 메틸렌비스페놀, BisP-AP(상품명, 혼슈 가가쿠 고교제), 노볼락 수지 등을 들 수 있지만, 이들에 한정되지 않는다.Specific examples of the hydroxy compound include phenol, trihydroxybenzophenone, 4methoxyphenol, isopropanol, octanol, t-Bu alcohol, cyclohexanol, naphthol, Bis-Z, BisP-EZ, TekP-4 HBPA , TrisP-HAP, TrisP-PA, TrisP-SA, TrisOCR-PA, BisOCHP-Z, BisP-MZ, BisP-PZ, BisP-IPZ, BisOCP-IPZ, BisP-CP, BisRS-2P, BisRS-3P, BisP-OCHP, Methylentris-FR-CR, BisRS-26X, DML-MBPC, DML-MBOC, DML-OCHP, DML-PCHP, DML-PC, DML-PTBP, DML-34X, DML-EP, DML-POP , Dimethylol-BisOC-P, DML-PFP, DML-PSBP, DML-MTrisPC, TriML-P, TriML-35XL, TML-BP, TML-HQ, TML-pp-BPF, TML-BPA, TMOM-BP , HML-TPPHBA, HML-TPHAP (above, brand name, manufactured by Honshu Kagaku High School), BIR-OC, BIP-PC, BIR-PC, BIR-PTBP, BIR-PCHP, BIP-BIOC-F, 4 PC, BIR -BIPC-F, TEP-BIP-A, 46DMOC, 46DMOEP, TM-BIP-A (above, trade names, manufactured by Asahi Yukizai Kogyo), 2,6-dimethoxymethyl-4-t-butylphenol, 2, 6-dimethoxymethyl-p-cresol, 2,6-diacetoxymethyl-p-cresol, naphthol, tetrahydroxybenzophenone, gallic acid methyl ester, bisphenol A, bisphenol E, methylene bisphenol, BisP-AP (trade name , Honshu Chemical Co., Ltd.), novolak resin, etc., but are not limited thereto.
아미노 화합물로서 구체적으로는, 아닐린, 메틸아닐린, 다이에틸아민, 뷰틸아민, 1,4-페닐렌다이아민, 1,3-페닐렌다이아민, 4,4'-다이아미노다이페닐에터, 4,4'-다이아미노다이페닐메테인, 4,4'-다이아미노다이페닐설폰, 4,4'-다이아미노다이페닐설파이드 등을 들 수 있지만, 이들에 한정되지 않는다.Specifically as amino compounds, aniline, methylaniline, diethylamine, butylamine, 1,4-phenylenediamine, 1,3-phenylenediamine, 4,4'-diaminodiphenyl ether, 4 , 4'-diaminodiphenyl methane, 4,4'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfide, and the like, but are not limited thereto.
또, 폴리하이드록시폴리아미노 화합물로서 구체적으로는, 2,2-비스(3-아미노-4-하이드록시페닐)헥사플루오로프로페인, 3,3'-다이하이드록시벤지딘 등을 들 수 있지만, 이들에 한정되지 않는다.In addition, specific examples of the polyhydroxypolyamino compound include 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane and 3,3'-dihydroxybenzidine. not limited to these
이들 중에서도, 퀴논다이아자이드 화합물로서, 페놀 화합물 및 4-나프토퀴논다이아자이드설폰일기의 에스터를 포함하는 것이 바람직하다. 이로써 i선 노광에 대한 보다 높은 감도와, 보다 높은 해상도를 얻을 수 있다.Among these, as a quinonediazide compound, what contains the ester of a phenol compound and 4-naphthoquinone diazide sulfonyl group is preferable. This makes it possible to obtain higher sensitivity to i-line exposure and higher resolution.
본 발명의 수지 조성물에 이용하는 퀴논다이아자이드 화합물의 함유량은, 수지 100질량부에 대하여, 1~50질량부가 바람직하고, 10~40질량부가 보다 바람직하다. 퀴논다이아자이드 화합물의 함유량을 이 범위로 함으로써, 노광부와 미노광부의 콘트라스트가 얻어짐으로써 보다 고감도화를 도모할 수 있기 때문에 바람직하다. 증감제 등을 필요에 따라 더 첨가해도 된다.The content of the quinonediazide compound used in the resin composition of the present invention is preferably 1 to 50 parts by mass, more preferably 10 to 40 parts by mass, based on 100 parts by mass of the resin. By making content of a quinonediazide compound into this range, when contrast of an exposed part and an unexposed part is obtained, since higher sensitivity can be aimed at more, it is preferable. You may further add a sensitizer etc. as needed.
광산발생제는, 옥심설포네이트기를 포함하는 화합물(이하, 간단히 "옥심설포네이트 화합물"이라고도 한다)인 것이 바람직하다.The photoacid generator is preferably a compound containing an oxime sulfonate group (hereinafter, simply referred to as "oxime sulfonate compound").
옥심설포네이트 화합물은, 옥심설포네이트기를 갖고 있으면 특별히 제한은 없지만, 하기 식 (OS-1), 후술하는 식 (OS-103), 식 (OS-104), 또는, 식 (OS-105)로 나타나는 옥심설포네이트 화합물인 것이 바람직하다.The oxime sulfonate compound is not particularly limited as long as it has an oxime sulfonate group, but is represented by the following formula (OS-1), the later-described formula (OS-103), the formula (OS-104), or the formula (OS-105). It is preferable that it is an oxime sulfonate compound shown.
[화학식 26][Formula 26]
식 (OS-1) 중, X3은, 알킬기, 알콕시기, 또는, 할로젠 원자를 나타낸다. X3이 복수 존재하는 경우는, 각각 동일해도 되고, 상이해도 된다. 상기 X3에 있어서의 알킬기 및 알콕시기는, 치환기를 갖고 있어도 된다. 상기 X3에 있어서의 알킬기로서는, 탄소수 1~4의, 직쇄상 또는 분기상 알킬기가 바람직하다. 상기 X3에 있어서의 알콕시기로서는, 탄소수 1~4의 직쇄상 또는 분기상 알콕시기가 바람직하다. 상기 X3에 있어서의 할로젠 원자로서는, 염소 원자 또는 불소 원자가 바람직하다.In Formula (OS-1), X 3 represents an alkyl group, an alkoxy group, or a halogen atom. When a plurality of X 3 are present, they may be the same or different. The alkyl group and alkoxy group in X 3 may have a substituent. As the alkyl group for X 3 , a straight-chain or branched alkyl group having 1 to 4 carbon atoms is preferable. As the alkoxy group for X 3 , a linear or branched alkoxy group having 1 to 4 carbon atoms is preferable. As a halogen atom in said X <3> , a chlorine atom or a fluorine atom is preferable.
식 (OS-1) 중, m3은, 0~3의 정수를 나타내며, 0 또는 1이 바람직하다. m3이 2 또는 3일 때, 복수의 X3은 동일해도 되고 상이해도 된다.In Formula (OS-1), m3 represents an integer of 0 to 3, and 0 or 1 is preferable. When m3 is 2 or 3, a plurality of X 3 may be the same or different.
식 (OS-1) 중, R34는, 알킬기 또는 아릴기를 나타내며, 탄소수 1~10의 알킬기, 탄소수 1~10의 알콕시기, 탄소수 1~5의 할로젠화 알킬기, 탄소수 1~5의 할로젠화 알콕시기, W로 치환되어 있어도 되는 페닐기, W로 치환되어 있어도 되는 나프틸기 또는 W로 치환되어 있어도 되는 안트라닐기인 것이 바람직하다. W는, 할로젠 원자, 사이아노기, 나이트로기, 탄소수 1~10의 알킬기, 탄소수 1~10의 알콕시기, 탄소수 1~5의 할로젠화 알킬기 또는 탄소수 1~5의 할로젠화 알콕시기, 탄소수 6~20의 아릴기, 탄소수 6~20의 할로젠화 아릴기를 나타낸다.In formula (OS-1), R 34 represents an alkyl group or an aryl group, and is an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a halogenated alkyl group having 1 to 5 carbon atoms, and a halogen having 1 to 5 carbon atoms. It is preferably a substituted alkoxy group, a phenyl group which may be substituted with W, a naphthyl group which may be substituted with W, or an anthranyl group which may be substituted with W. W is a halogen atom, a cyano group, a nitro group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a halogenated alkyl group having 1 to 5 carbon atoms, or a halogenated alkoxy group having 1 to 5 carbon atoms , an aryl group having 6 to 20 carbon atoms, and a halogenated aryl group having 6 to 20 carbon atoms.
식 (OS-1) 중, m3이 3이고, X3이 메틸기이며, X3의 치환 위치가 오쏘위이고, R34가 탄소수 1~10의 직쇄상 알킬기, 7,7-다이메틸-2-옥소노보닐메틸기, 또는, p-톨릴기인 화합물이 특히 바람직하다.In formula (OS-1), m3 is 3, X 3 is a methyl group, the substituted position of X 3 is an ortho position, R 34 is a linear alkyl group having 1 to 10 carbon atoms, and 7,7-dimethyl-2- A compound having an oxonobonylmethyl group or a p-tolyl group is particularly preferred.
식 (OS-1)로 나타나는 옥심설포네이트 화합물의 구체예로서는, 일본 공개특허공보 2011-209692호의 단락 번호 0064~0068, 일본 공개특허공보 2015-194674호의 단락 번호 0158~0167에 기재된 이하의 화합물이 예시되며, 이들 내용은 본 명세서에 원용된다.As a specific example of the oxime sulfonate compound represented by Formula (OS-1), the following compounds described in Paragraph Nos. 0064-0068 of Unexamined-Japanese-Patent No. 2011-209692 and Paragraph No. 0158-0167 of Unexamined-Japanese-Patent No. 2015-194674 are illustrated. and these contents are incorporated herein.
[화학식 27][Formula 27]
식 (OS-103)~식 (OS-105) 중, Rs1은 알킬기, 아릴기 또는 헤테로아릴기를 나타내고, 복수 존재하는 경우가 있는 Rs2는 각각 독립적으로, 수소 원자, 알킬기, 아릴기 또는 할로젠 원자를 나타내며, 복수 존재하는 경우가 있는 Rs6은 각각 독립적으로, 할로젠 원자, 알킬기, 알킬옥시기, 설폰산기, 아미노설폰일기 또는 알콕시설폰일기를 나타내고, Xs는 O 또는 S를 나타내며, ns는 1 또는 2를 나타내고, ms는 0~6의 정수를 나타낸다.In formulas (OS-103) to (OS-105), R s1 represents an alkyl group, an aryl group, or a heteroaryl group, and R s2 , which may be present in a plurality thereof, is each independently a hydrogen atom, an alkyl group, an aryl group, or a Represents a rosen atom, R s6 , which may exist in plural numbers, each independently represents a halogen atom, an alkyl group, an alkyloxy group, a sulfonic acid group, an aminosulfonyl group, or an alkoxysulfonyl group, Xs represents O or S, ns represents 1 or 2, and ms represents an integer from 0 to 6.
식 (OS-103)~식 (OS-105) 중, Rs1로 나타나는 알킬기(탄소수 1~30이 바람직하다), 아릴기(탄소수 6~30이 바람직하다) 또는 헤테로아릴기(탄소수 4~30이 바람직하다)는, 본 발명의 효과가 얻어지는 범위에서 공지의 치환기를 갖고 있어도 된다.In formulas (OS-103) to (OS-105), an alkyl group (preferably 1 to 30 carbon atoms), an aryl group (preferably 6 to 30 carbon atoms), or a heteroaryl group (preferably 4 to 30 carbon atoms) represented by R s1 This preferable) may have a known substituent within the range in which the effect of this invention is acquired.
식 (OS-103)~식 (OS-105) 중, Rs2는, 수소 원자, 알킬기(탄소수 1~12가 바람직하다) 또는 아릴기(탄소수 6~30이 바람직하다)인 것이 바람직하고, 수소 원자 또는 알킬기인 것이 보다 바람직하다. 화합물 중에 2 이상 존재하는 경우가 있는 Rs2 중, 1개 또는 2개가 알킬기, 아릴기 또는 할로젠 원자인 것이 바람직하고, 1개가 알킬기, 아릴기 또는 할로젠 원자인 것이 보다 바람직하며, 1개가 알킬기이고, 또한 나머지가 수소 원자인 것이 특히 바람직하다. Rs2로 나타나는 알킬기 또는 아릴기는, 본 발명의 효과가 얻어지는 범위에서 공지의 치환기를 갖고 있어도 된다.In formulas (OS-103) to (OS-105), R s2 is preferably a hydrogen atom, an alkyl group (preferably 1 to 12 carbon atoms), or an aryl group (preferably 6 to 30 carbon atoms), and hydrogen It is more preferably an atom or an alkyl group. Among R s2 that may exist in two or more in a compound, one or two are preferably an alkyl group, an aryl group, or a halogen atom, more preferably one is an alkyl group, an aryl group, or a halogen atom, and one is an alkyl group , and it is particularly preferred that the remainder are hydrogen atoms. The alkyl group or aryl group represented by R s2 may have a known substituent within the range where the effect of the present invention is obtained.
식 (OS-103), 식 (OS-104), 또는, 식 (OS-105) 중, Xs는 O 또는 S를 나타내며, O인 것이 바람직하다. 상기 식 (OS-103)~(OS-105)에 있어서, Xs를 환원으로서 포함하는 환은, 5원환 또는 6원환이다.In Formula (OS-103), Formula (OS-104), or Formula (OS-105), Xs represents O or S, and is preferably O. In the above formulas (OS-103) to (OS-105), the ring containing Xs as a reduction is a 5- or 6-membered ring.
식 (OS-103)~식 (OS-105) 중, ns는 1 또는 2를 나타내며, Xs가 O인 경우, ns는 1인 것이 바람직하고, 또, Xs가 S인 경우, ns는 2인 것이 바람직하다.In formulas (OS-103) to (OS-105), ns represents 1 or 2, and when Xs is O, ns is preferably 1, and when Xs is S, ns is 2 desirable.
식 (OS-103)~식 (OS-105) 중, Rs6으로 나타나는 알킬기(탄소수 1~30이 바람직하다) 및 알킬옥시기(탄소수 1~30이 바람직하다)는, 치환기를 갖고 있어도 된다.In formulas (OS-103) to (OS-105), the alkyl group (preferably 1 to 30 carbon atoms) and the alkyloxy group (preferably 1 to 30 carbon atoms) represented by R s6 may have a substituent.
식 (OS-103)~식 (OS-105) 중, ms는 0~6의 정수를 나타내며, 0~2의 정수인 것이 바람직하고, 0 또는 1인 것이 보다 바람직하며, 0인 것이 특히 바람직하다.In formulas (OS-103) to (OS-105), ms represents an integer of 0 to 6, preferably an integer of 0 to 2, more preferably 0 or 1, particularly preferably 0.
또, 상기 식 (OS-103)으로 나타나는 화합물은, 하기 식 (OS-106), 식 (OS-110) 또는 식 (OS-111)로 나타나는 화합물인 것이 특히 바람직하고, 상기 식 (OS-104)로 나타나는 화합물은, 하기 식 (OS-107)로 나타나는 화합물인 것이 특히 바람직하며, 상기 식 (OS-105)로 나타나는 화합물은, 하기 식 (OS-108) 또는 식 (OS-109)로 나타나는 화합물인 것이 특히 바람직하다.In addition, the compound represented by the formula (OS-103) is particularly preferably a compound represented by the following formula (OS-106), formula (OS-110) or formula (OS-111), and the formula (OS-104 ) is particularly preferably a compound represented by the following formula (OS-107), and the compound represented by the formula (OS-105) is represented by the following formula (OS-108) or formula (OS-109) Compounds are particularly preferred.
[화학식 28][Formula 28]
식 (OS-106)~식 (OS-111) 중, Rt1은 알킬기, 아릴기 또는 헤테로아릴기를 나타내고, Rt7은, 수소 원자 또는 브로민 원자를 나타내며, Rt8은 수소 원자, 탄소수 1~8의 알킬기, 할로젠 원자, 클로로메틸기, 브로모메틸기, 브로모에틸기, 메톡시메틸기, 페닐기 또는 클로로페닐기를 나타내고, Rt9는 수소 원자, 할로젠 원자, 메틸기 또는 메톡시기를 나타내며, Rt2는 수소 원자 또는 메틸기를 나타낸다.In formulas (OS-106) to (OS-111), R t1 represents an alkyl group, an aryl group, or a heteroaryl group, R t7 represents a hydrogen atom or a bromine atom, and R t8 represents a hydrogen atom and 1 to 10 carbon atoms. 8 represents an alkyl group, a halogen atom, a chloromethyl group, a bromomethyl group, a bromoethyl group, a methoxymethyl group, a phenyl group or a chlorophenyl group, R t9 represents a hydrogen atom, a halogen atom, a methyl group or a methoxy group, and R t2 is represents a hydrogen atom or a methyl group.
식 (OS-106)~식 (OS-111) 중, Rt7은, 수소 원자 또는 브로민 원자를 나타내며, 수소 원자인 것이 바람직하다.In formulas (OS-106) to (OS-111), R t7 represents a hydrogen atom or a bromine atom, and is preferably a hydrogen atom.
식 (OS-106)~식 (OS-111) 중, Rt8은, 수소 원자, 탄소수 1~8의 알킬기, 할로젠 원자, 클로로메틸기, 브로모메틸기, 브로모에틸기, 메톡시메틸기, 페닐기 또는 클로로페닐기를 나타내며, 탄소수 1~8의 알킬기, 할로젠 원자 또는 페닐기인 것이 바람직하고, 탄소수 1~8의 알킬기인 것이 보다 바람직하며, 탄소수 1~6의 알킬기인 것이 더 바람직하고, 메틸기인 것이 특히 바람직하다.In formulas (OS-106) to (OS-111), R t8 is a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, a halogen atom, a chloromethyl group, a bromomethyl group, a bromoethyl group, a methoxymethyl group, a phenyl group, or Represents a chlorophenyl group, preferably an alkyl group, a halogen atom or a phenyl group having 1 to 8 carbon atoms, more preferably an alkyl group having 1 to 8 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and particularly a methyl group desirable.
식 (OS-106)~식 (OS-111) 중, Rt9는, 수소 원자, 할로젠 원자, 메틸기 또는 메톡시기를 나타내며, 수소 원자인 것이 바람직하다.In formulas (OS-106) to (OS-111), R t9 represents a hydrogen atom, a halogen atom, a methyl group or a methoxy group, and is preferably a hydrogen atom.
Rt2는, 수소 원자 또는 메틸기를 나타내며, 수소 원자인 것이 바람직하다.R t2 represents a hydrogen atom or a methyl group, and is preferably a hydrogen atom.
또, 상기 옥심설포네이트 화합물에 있어서, 옥심의 입체 구조(E, Z)에 대해서는, 어느 일방이어도 되고, 혼합물이어도 된다.Moreover, in the said oxime sulfonate compound, about the three-dimensional structure (E, Z) of an oxime, either one may be sufficient and a mixture may be sufficient as it.
상기 식 (OS-103)~식 (OS-105)로 나타나는 옥심설포네이트 화합물의 구체예로서는, 일본 공개특허공보 2011-209692호의 단락 번호 0088~0095, 일본 공개특허공보 2015-194674호의 단락 번호 0168~0194에 기재된 화합물이 예시되며, 이들 내용은 본 명세서에 원용된다.As a specific example of the oxime sulfonate compound represented by the said Formula (OS-103) - Formula (OS-105), Paragraph No. 0088 of Unexamined-Japanese-Patent No. 2011-209692 - 0095, Paragraph No. 0168 - of Unexamined-Japanese-Patent No. 2015-194674 - The compounds described in 0194 are exemplified, and these contents are incorporated herein by reference.
옥심설포네이트기를 적어도 하나를 포함하는 옥심설포네이트 화합물의 적합한 다른 양태로서는, 하기 식 (OS-101), 식 (OS-102)로 나타나는 화합물을 들 수 있다.As another suitable aspect of the oxime sulfonate compound containing at least one oxime sulfonate group, the compound represented by the following formula (OS-101) and formula (OS-102) is mentioned.
[화학식 29][Formula 29]
식 (OS-101) 또는 식 (OS-102) 중, Ru9는, 수소 원자, 알킬기, 알켄일기, 알콕시기, 알콕시카보닐기, 아실기, 카바모일기, 설파모일기, 설포기, 사이아노기, 아릴기 또는 헤테로아릴기를 나타낸다. Ru9가 사이아노기 또는 아릴기인 양태가 보다 바람직하며, Ru9가 사이아노기, 페닐기 또는 나프틸기인 양태가 더 바람직하다.In Formula (OS-101) or Formula (OS-102), R u9 is a hydrogen atom, an alkyl group, an alkenyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group, a carbamoyl group, a sulfamoyl group, a sulfo group, or a cyano group. group, aryl group or heteroaryl group. An aspect in which R u9 is a cyano group or an aryl group is more preferable, and an aspect in which R u9 is a cyano group, a phenyl group or a naphthyl group is still more preferable.
식 (OS-101) 또는 식 (OS-102) 중, Ru2a는, 알킬기 또는 아릴기를 나타낸다.In formula (OS-101) or formula (OS-102), R u2a represents an alkyl group or an aryl group.
식 (OS-101) 또는 식 (OS-102) 중, Xu는, -O-, -S-, -NH-, -NRu5-, -CH2-, -CRu6H- 또는 CRu6Ru7-을 나타내고, Ru5~Ru7은 각각 독립적으로, 알킬기 또는 아릴기를 나타낸다.In formula (OS-101) or formula (OS-102), Xu is -O-, -S-, -NH-, -NR u5 -, -CH 2 -, -CR u6 H- or CR u6 R u7 -, and R u5 to R u7 each independently represent an alkyl group or an aryl group.
식 (OS-101) 또는 식 (OS-102) 중, Ru1~Ru4는 각각 독립적으로, 수소 원자, 할로젠 원자, 알킬기, 알켄일기, 알콕시기, 아미노기, 알콕시카보닐기, 알킬카보닐기, 아릴카보닐기, 아마이드기, 설포기, 사이아노기 또는 아릴기를 나타낸다. Ru1~Ru4 중 2개가 각각 서로 결합하여 환을 형성해도 된다. 이때, 환이 축환하여 벤젠환과 함께 축합환을 형성하고 있어도 된다. Ru1~Ru4로서는, 수소 원자, 할로젠 원자 또는 알킬기가 바람직하고, 또, Ru1~Ru4 중 적어도 2개가 서로 결합하여 아릴기를 형성하는 양태도 바람직하다. 그중에서도, Ru1~Ru4가 모두 수소 원자인 양태가 바람직하다. 상기한 치환기는, 모두, 치환기를 더 갖고 있어도 된다.In Formula (OS-101) or Formula (OS-102), R u1 to R u4 are each independently a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkoxy group, an amino group, an alkoxycarbonyl group, an alkylcarbonyl group, represents an arylcarbonyl group, an amide group, a sulfo group, a cyano group or an aryl group. Two of R u1 to R u4 may be bonded to each other to form a ring. At this time, the ring may be condensed to form a condensed ring together with the benzene ring. As R u1 to R u4 , a hydrogen atom, a halogen atom or an alkyl group is preferable, and an aspect in which at least two of R u1 to R u4 bond to each other to form an aryl group is also preferable. Among them, an aspect in which all of R u1 to R u4 are hydrogen atoms is preferable. All of the substituents described above may further have a substituent.
상기 식 (OS-101)로 나타나는 화합물은, 식 (OS-102)로 나타나는 화합물인 것이 보다 바람직하다.It is more preferable that the compound represented by the formula (OS-101) is a compound represented by the formula (OS-102).
또, 상기 옥심설포네이트 화합물에 있어서, 옥심이나 벤조싸이아졸환의 입체 구조(E, Z 등)에 대해서는 각각, 어느 일방이어도 되고, 혼합물이어도 된다.Moreover, in the said oxime sulfonate compound, about the steric structure (E, Z, etc.) of an oxime and a benzothiazole ring, either one may be sufficient respectively, and a mixture may be sufficient as it.
식 (OS-101)로 나타나는 화합물의 구체예로서는, 일본 공개특허공보 2011-209692호의 단락 번호 0102~0106, 일본 공개특허공보 2015-194674호의 단락 번호 0195~0207에 기재된 화합물이 예시되며, 이들 내용은 본 명세서에 원용된다.As a specific example of the compound represented by formula (OS-101), Paragraph No. 0102 of Unexamined-Japanese-Patent No. 2011-209692 - 0106, and Paragraph No. 0195 of Unexamined-Japanese-Patent No. 2015-194674 - the compound of 0207 are illustrated, These contents are incorporated herein by reference.
상기 화합물 중에서도, 하기 b-9, b-16, b-31, b-33이 바람직하다.Among the above compounds, the following b-9, b-16, b-31 and b-33 are preferable.
[화학식 30][Formula 30]
시판품으로서는, WPAG-336(후지필름 와코 준야쿠(주)제), WPAG-443(후지필름 와코 준야쿠(주)제), MBZ-101(미도리 가가쿠(주)제) 등을 들 수 있다.Commercially available products include WPAG-336 (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.), WPAG-443 (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.), MBZ-101 (manufactured by Midori Chemical Co., Ltd.), and the like. .
또, 하기 구조식으로 나타나는 화합물도 바람직한 예로서 들 수 있다.Moreover, the compound represented by the following structural formula is also mentioned as a preferable example.
[화학식 31][Formula 31]
유기 할로젠화 화합물로서는, 구체적으로는, 와카바야시 등 "Bull Chem. Soc Japan" 42, 2924(1969), 미국 특허공보 제3,905,815호, 일본 공고특허공보 소46-4605호, 일본 공개특허공보 소48-36281호, 일본 공개특허공보 소55-32070호, 일본 공개특허공보 소60-239736호, 일본 공개특허공보 소61-169835호, 일본 공개특허공보 소61-169837호, 일본 공개특허공보 소62-58241호, 일본 공개특허공보 소62-212401호, 일본 공개특허공보 소63-70243호, 일본 공개특허공보 소63-298339호, M. P. Hutt "Jurnal of Heterocyclic Chemistry" 1(No3), (1970) 등에 기재된 화합물을 들 수 있으며, 이들 내용은 본 명세서에 원용된다. 특히, 트라이할로메틸기가 치환된 옥사졸 화합물: S-트라이아진 화합물을 바람직한 예로서 들 수 있다.As an organic halogenated compound, specifically, Wakabayashi et al. "Bull Chem. Soc Japan" 42, 2924 (1969), U.S. Patent No. 3,905,815, Japanese Patent Publication No. 46-4605, Japanese Unexamined Patent Publication No. 48-36281, Japanese Laid-Open Patent Publication 55-32070, Japanese Laid-Open Patent Publication 60-239736, Japanese Laid-Open Patent Publication 61-169835, Japanese Laid-Open Patent Publication 61-169837, Japanese Laid-Open Patent Publication 62-58241, Japanese Unexamined Patent Publication No. 62-212401, Japanese Unexamined Patent Publication No. 63-70243, Japanese Unexamined Patent Publication No. 63-298339, M. P. Hutt "Jurnal of Heterocyclic Chemistry" 1 (No3), (1970 ), and the like, the contents of which are incorporated herein by reference. In particular, oxazole compounds in which a trihalomethyl group is substituted: S-triazine compounds are exemplified as preferred examples.
보다 적합하게는, 적어도 하나의 모노, 다이, 또는 트라이할로젠 치환 메틸기가 s-트라이아진환에 결합한 s-트라이아진 유도체, 구체적으로는, 예를 들면, 2,4,6-트리스(모노클로로메틸)-s-트라이아진, 2,4,6-트리스(다이클로로메틸)-s-트라이아진, 2,4,6-트리스(트라이클로로메틸)-s-트라이아진, 2-메틸-4,6-비스(트라이클로로메틸)-s-트라이아진, 2-n-프로필-4,6-비스(트라이클로로메틸)-s-트라이아진, 2-(α,α,β-트라이클로로에틸)-4,6-비스(트라이클로로메틸)-s-트라이아진, 2-페닐-4,6-비스(트라이클로로메틸)-s-트라이아진, 2-(p-메톡시페닐)-4,6-비스(트라이클로로메틸)-s-트라이아진, 2-(3,4-에폭시페닐)-4,6-비스(트라이클로로메틸)-s-트라이아진, 2-(p-클로로페닐)-4,6-비스(트라이클로로메틸)-s-트라이아진, 2-〔1-(p-메톡시페닐)-2,4-뷰타다이엔일〕-4,6-비스(트라이클로로메틸)-s-트라이아진, 2-스타이릴-4,6-비스(트라이클로로메틸)-s-트라이아진, 2-(p-메톡시스타이릴)-4,6-비스(트라이클로로메틸)-s-트라이아진, 2-(p-i-프로필옥시스타이릴)-4,6-비스(트라이클로로메틸)-s-트라이아진, 2-(p-톨릴)-4,6-비스(트라이클로로메틸)-s-트라이아진, 2-(4-나톡시나프틸)-4,6-비스(트라이클로로메틸)-s-트라이아진, 2-페닐싸이오-4,6-비스(트라이클로로메틸)-s-트라이아진, 2-벤질싸이오-4,6-비스(트라이클로로메틸)-s-트라이아진, 2,4,6-트리스(다이브로모메틸)-s-트라이아진, 2,4,6-트리스(트라이브로모메틸)-s-트라이아진, 2-메틸-4,6-비스(트라이브로모메틸)-s-트라이아진, 2-메톡시-4,6-비스(트라이브로모메틸)-s-트라이아진 등을 들 수 있다.More preferably, s-triazine derivatives in which at least one mono, di, or trihalogen substituted methyl group is bonded to the s-triazine ring, specifically, for example, 2,4,6-tris (monochloro Methyl) -s-triazine, 2,4,6-tris (dichloromethyl) -s-triazine, 2,4,6-tris (trichloromethyl) -s-triazine, 2-methyl-4, 6-bis(trichloromethyl)-s-triazine, 2-n-propyl-4,6-bis(trichloromethyl)-s-triazine, 2-(α,α,β-trichloroethyl)- 4,6-bis(trichloromethyl)-s-triazine, 2-phenyl-4,6-bis(trichloromethyl)-s-triazine, 2-(p-methoxyphenyl)-4,6- Bis(trichloromethyl)-s-triazine, 2-(3,4-epoxyphenyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-chlorophenyl)-4, 6-bis(trichloromethyl)-s-triazine, 2-[1-(p-methoxyphenyl)-2,4-butadienyl]-4,6-bis(trichloromethyl)-s- Triazine, 2-styryl-4,6-bis(trichloromethyl)-s-triazine, 2-(p-methoxystyryl)-4,6-bis(trichloromethyl)-s-triazine , 2-(p-i-propyloxystyryl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-tolyl)-4,6-bis(trichloromethyl)-s-tri Azine, 2-(4-nathoxynaphthyl)-4,6-bis(trichloromethyl)-s-triazine, 2-phenylthio-4,6-bis(trichloromethyl)-s-triazine , 2-benzylthio-4,6-bis (trichloromethyl) -s-triazine, 2,4,6-tris (dibromomethyl) -s-triazine, 2,4,6-tris (tribe lomomethyl)-s-triazine, 2-methyl-4,6-bis(tribromomethyl)-s-triazine, 2-methoxy-4,6-bis(tribromomethyl)-s-triazine, etc. can be heard
유기 붕산염 화합물로서는, 예를 들면, 일본 공개특허공보 소62-143044호, 일본 공개특허공보 소62-150242호, 일본 공개특허공보 평9-188685호, 일본 공개특허공보 평9-188686호, 일본 공개특허공보 평9-188710호, 일본 공개특허공보 2000-131837호, 일본 공개특허공보 2002-107916호, 일본 특허공보 제2764769호, 일본 공개특허공보 2002-116539호 등, 및, Kunz, Martin "Rad Tech '98. Proceeding April 19-22, 1998, Chicago" 등에 기재되는 유기 붕산염, 일본 공개특허공보 평6-157623호, 일본 공개특허공보 평6-175564호, 일본 공개특허공보 평6-175561호에 기재된 유기 붕소 설포늄 착체 혹은 유기 붕소 옥소설포늄 착체, 일본 공개특허공보 평6-175554호, 일본 공개특허공보 평6-175553호에 기재된 유기 붕소 아이오도늄 착체, 일본 공개특허공보 평9-188710호에 기재된 유기 붕소 포스포늄 착체, 일본 공개특허공보 평6-348011호, 일본 공개특허공보 평7-128785호, 일본 공개특허공보 평7-140589호, 일본 공개특허공보 평7-306527호, 일본 공개특허공보 평7-292014호 등의 유기 붕소 천이 금속 배위 착체 등을 구체예로서 들 수 있으며, 이들 내용은 본 명세서에 원용된다.As an organic borate compound, Unexamined-Japanese-Patent No. 62-143044, Unexamined-Japanese-Patent No. 62-150242, Unexamined-Japanese-Patent No. 9-188685, Unexamined-Japanese-Patent No. 9-188686, Japan, for example Japanese Unexamined Patent Publication No. 9-188710, Japanese Unexamined Patent Publication No. 2000-131837, Japanese Unexamined Patent Publication No. 2002-107916, Japanese Patent Publication No. 2764769, Japanese Unexamined Patent Publication No. 2002-116539, etc., and Kunz, Martin " Rad Tech '98. Proceeding April 19-22, 1998, Chicago" and the like, organic borates described in Japanese Unexamined Patent Publication No. Hei 6-157623, Japanese Unexamined Patent Publication No. Hei 6-175564, Japanese Unexamined Patent Publication No. Hei 6-175561 The organic boron sulfonium complex or organoboron oxosulfonium complex described in, Japanese Unexamined Patent Publication No. 6-175554, Organic boron iodonium complex described in Japanese Unexamined Patent Publication No. Hei 6-175553, Japanese Unexamined Patent Publication Hei 9- 188710, an organoboron phosphonium complex described in Japanese Patent Application Laid-Open No. 6-348011, Japanese Patent Laid-Open No. 7-128785, Japanese Patent Laid-Open No. 7-140589, Japanese Patent Laid-Open No. 7-306527, Organoboron transition metal coordination complexes, such as Unexamined-Japanese-Patent No. 7-292014, etc. are mentioned as a specific example, These content is integrated in this specification.
다이설폰 화합물로서는, 일본 공개특허공보 소61-166544호, 일본 특허출원 2001-132318공보 등에 기재되어 있는 화합물 및 다이아조다이설폰 화합물을 들 수 있다.As a disulfone compound, the compound and diazodisulfone compound described in Unexamined-Japanese-Patent No. 61-166544, Japanese Patent Application No. 2001-132318, etc. are mentioned.
상기 오늄염 화합물로서는, 예를 들면, S. I. Schlesinger, Photogr. Sci. Eng., 18,387(1974), T. S. Bal et al, Polymer, 21,423(1980)에 기재된 다이아조늄염, 미국 특허공보 제4,069,055호, 일본 공개특허공보 평4-365049호 등에 기재된 암모늄염, 미국 특허공보 제4,069,055호, 동 4,069,056호의 각 명세서에 기재된 포스포늄염, 유럽 특허공보 제104,143호, 미국 특허공보 제339,049호, 동 제410,201호의 각 명세서, 일본 공개특허공보 평2-150848호, 일본 공개특허공보 평2-296514호에 기재된 아이오도늄염, 유럽 특허공보 제370,693호, 동 390,214호, 동 233,567호, 동 297,443호, 동 297,442호, 미국 특허공보 제4,933,377호, 동 161,811호, 동 410,201호, 동 339,049호, 동 4,760,013호, 동 4,734,444호, 동 2,833,827호, 독일 특허공보 제2,904,626호, 동 3,604,580호, 동 3,604,581호의 각 명세서에 기재된 설포늄염, J. V. Crivello et al, Macromolecules, 10(6), 1307(1977), J. V. Crivello et al, J. Polymer Sci., Polymer Chem. Ed., 17,1047(1979)에 기재된 셀레노늄염, C. S. Wen et al, Teh, Proc. Conf. Rad. Curing ASIA, p478 Tokyo, Oct(1988)에 기재된 아르소늄염, 피리디늄염 등의 오늄염 등을 들 수 있으며, 이들 내용명은 본 명세서에 원용된다.As the onium salt compound, for example, S. I. Schlesinger, Photogr. Sci. Eng., 18,387 (1974), T. S. Bal et al, Polymer, 21,423 (1980) diazonium salts, US Patent Publication No. 4,069,055, ammonium salts described in Japanese Unexamined Patent Publication Hei 4-365049, etc., US Patent Publication No. 4,069,055 4,069,056, European Patent No. 104,143, U.S. Patent No. 339,049, each specification of No. 410,201, Japanese Unexamined Patent Publication No. 2-150848, Japanese Unexamined Patent Publication Hei 2 Iodonium salt described in -296514, European Patent Nos. 370,693, 390,214, 233,567, 297,443, 297,442, US Patent Nos. 4,933,377, 161,811, 410,201, 339,049 , 4,760,013, 4,734,444, 2,833,827, German Patent Publication Nos. 2,904,626, 3,604,580, and 3,604,581 sulfonium salts, J. V. Crivello et al, Macromolecules, 10(6), 1307 (1977) , J. V. Crivello et al, J. Polymer Sci., Polymer Chem. Ed., 17,1047 (1979) selenium salts, C. S. Wen et al, Teh, Proc. Conf. Rad. and onium salts such as arsonium salts and pyridinium salts described in Curing ASIA, p478 Tokyo, Oct (1988), and the like, and the names of these are incorporated herein by reference.
오늄염으로서는, 하기 일반식 (RI-I)~(RI-III)으로 나타나는 오늄염을 들 수 있다.Examples of the onium salt include onium salts represented by the following general formulas (RI-I) to (RI-III).
[화학식 32][Formula 32]
식 (RI-I) 중, Ar11은 치환기를 1~6 갖고 있어도 되는 탄소수 20 이하의 아릴기를 나타내며, 바람직한 치환기로서는 탄소수 1~12의 알킬기, 탄소수 2~12의 알켄일기, 탄소수 2~12의 알카인일기, 탄소수 6~12의 아릴기, 탄소수 1~12의 알콕시기, 탄소수 1~12의 아릴옥시기, 할로젠 원자, 탄소수 1~12의 알킬아미노기, 탄소수 2~12의 다이알킬아미노기, 알킬기의 탄소수가 1~12인 알킬아마이드기 또는 아릴기의 탄소수가 6~20인 아릴아마이드기, 카보닐기, 카복시기, 사이아노기, 설폰일기, 탄소수 1~12의 싸이오알킬기, 탄소수 1~12의 싸이오아릴기를 들 수 있다. Z11 -은 1가의 음이온을 나타내며, 할로젠 이온, 과염소산 이온, 헥사플루오로포스페이트 이온, 테트라플루오로보레이트 이온, 설폰산 이온, 설핀산 이온, 싸이오설폰산 이온, 황산 이온이고, 안정성의 면에서 과염소산 이온, 헥사플루오로포스페이트 이온, 테트라플루오로보레이트 이온, 설폰산 이온, 설핀산 이온이 바람직하다. 식 (RI-II) 중, Ar21, Ar22는 각각 독립적으로 치환기를 1~6 갖고 있어도 되는 탄소수 1~20의 아릴기를 나타내고, 바람직한 치환기로서는 탄소수 1~12의 알킬기, 탄소수 2~12의 알켄일기, 탄소수 2~12의 알카인일기, 탄소수 1~12의 아릴기, 탄소수 1~12의 알콕시기, 탄소수 1~12의 아릴옥시기, 할로젠 원자, 탄소수 1~12의 모노알킬아미노기, 알킬기의 탄소수가 각각 독립적으로 1~12인 다이알킬아미노기, 알킬기의 탄소수가 탄소수 1~12인 알킬아마이드기 또는 아릴아마이드기, 카보닐기, 카복시기, 사이아노기, 설폰일기, 탄소수 1~12의 싸이오알킬기, 탄소수 1~12의 싸이오아릴기를 들 수 있다. Z21 -은 1가의 음이온을 나타내며, 할로젠 이온, 과염소산 이온, 헥사플루오로포스페이트 이온, 테트라플루오로보레이트 이온, 설폰산 이온, 설핀산 이온, 싸이오설폰산 이온, 황산 이온이고, 안정성, 반응성의 면에서 과염소산 이온, 헥사플루오로포스페이트 이온, 테트라플루오로보레이트 이온, 설폰산 이온, 설핀산 이온, 카복실산 이온이 바람직하다. 식 (RI-III) 중, R31, R32, R33은 각각 독립적으로 치환기를 1~6 갖고 있어도 되는 탄소수 6~20의 아릴기 또는 알킬기, 알켄일기, 알카인일기를 나타내며, 바람직하게는 반응성, 안정성의 면에서, 아릴기인 것이 바람직하다. 바람직한 치환기로서는 탄소수 1~12의 알킬기, 탄소수 2~12의 알켄일기, 탄소수 2~12의 알카인일기, 탄소수 1~12의 아릴기, 탄소수 1~12의 알콕시기, 탄소수 1~12의 아릴옥시기, 할로젠 원자, 탄소수 1~12의 모노알킬아미노기, 알킬기의 탄소수가 각각 독립적으로 탄소수 1~12인 다이알킬아미노기, 알킬기의 탄소수가 탄소수 1~12인 알킬아마이드기 또는 아릴아마이드기, 카보닐기, 카복시기, 사이아노기, 설폰일기, 탄소수 1~12의 싸이오알킬기, 탄소수 1~12의 싸이오아릴기를 들 수 있다. Z31 -은 1가의 음이온을 나타내며, 할로젠 이온, 과염소산 이온, 헥사플루오로포스페이트 이온, 테트라플루오로보레이트 이온, 설폰산 이온, 설핀산 이온, 싸이오설폰산 이온, 황산 이온이고, 안정성, 반응성의 면에서 과염소산 이온, 헥사플루오로포스페이트 이온, 테트라플루오로보레이트 이온, 설폰산 이온, 설핀산 이온, 카복실산 이온이 바람직하다.In the formula (RI-I), Ar 11 represents an aryl group having 20 or less carbon atoms which may have 1 to 6 substituents, and preferable substituents include an alkyl group of 1 to 12 carbon atoms, an alkenyl group of 2 to 12 carbon atoms, and a carbon atom group of 2 to 12 carbon atoms. an alkynyl group, an aryl group having 6 to 12 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, an aryloxy group having 1 to 12 carbon atoms, a halogen atom, an alkylamino group having 1 to 12 carbon atoms, a dialkylamino group having 2 to 12 carbon atoms, An alkylamide group having 1 to 12 carbon atoms in an alkyl group or an arylamide group having 6 to 20 carbon atoms in an aryl group, a carbonyl group, a carboxy group, a cyano group, a sulfonyl group, a thioalkyl group having 1 to 12 carbon atoms, and a carbon number 1 to 12 The thioaryl group of 12 is mentioned. Z 11 - represents a monovalent anion, and is a halogen ion, a perchlorate ion, a hexafluorophosphate ion, a tetrafluoroborate ion, a sulfonate ion, a sulfinate ion, a thiosulfonate ion, a sulfate ion, and in terms of stability A perchlorate ion, a hexafluorophosphate ion, a tetrafluoroborate ion, a sulfonic acid ion, and a sulfinic acid ion are preferred. In formula (RI-II), Ar 21 and Ar 22 each independently represent an aryl group having 1 to 20 carbon atoms which may have 1 to 6 substituents, and preferred substituents include an alkyl group of 1 to 12 carbon atoms and an alkene of 2 to 12 carbon atoms. Diary, C2-12 alkynyl group, C1-12 aryl group, C1-12 alkoxy group, C1-12 aryloxy group, halogen atom, C1-12 monoalkylamino group, alkyl group A dialkylamino group having 1 to 12 carbon atoms each independently, an alkylamide group or arylamide group having 1 to 12 carbon atoms in the alkyl group, a carbonyl group, a carboxy group, a cyano group, a sulfonyl group, a cyano group having 1 to 12 carbon atoms An oalkyl group and a thioaryl group having 1 to 12 carbon atoms are exemplified. Z 21 - represents a monovalent anion, and is a halogen ion, a perchlorate ion, a hexafluorophosphate ion, a tetrafluoroborate ion, a sulfonate ion, a sulfinate ion, a thiosulfonate ion, and a sulfate ion, and has stability and reactivity. For cotton, perchlorate ions, hexafluorophosphate ions, tetrafluoroborate ions, sulfonate ions, sulfinate ions, and carboxylate ions are preferred. In formula (RI-III), R 31 , R 32 , R 33 each independently represent an aryl group or alkyl group having 6 to 20 carbon atoms, which may have 1 to 6 substituents, an alkenyl group, or an alkynyl group, preferably From the viewpoint of reactivity and stability, an aryl group is preferred. Preferred substituents include an alkyl group of 1 to 12 carbon atoms, an alkenyl group of 2 to 12 carbon atoms, an alkynyl group of 2 to 12 carbon atoms, an aryl group of 1 to 12 carbon atoms, an alkoxy group of 1 to 12 carbon atoms, and an aryloxy group of 1 to 12 carbon atoms. Group, halogen atom, monoalkylamino group having 1 to 12 carbon atoms, dialkylamino group having 1 to 12 carbon atoms in the alkyl group independently, alkylamide group or arylamide group having 1 to 12 carbon atoms in the alkyl group, carbonyl group , a carboxy group, a cyano group, a sulfonyl group, a thioalkyl group having 1 to 12 carbon atoms, and a thioaryl group having 1 to 12 carbon atoms. Z 31 - represents a monovalent anion, and is a halogen ion, a perchlorate ion, a hexafluorophosphate ion, a tetrafluoroborate ion, a sulfonate ion, a sulfinate ion, a thiosulfonate ion, and a sulfate ion, and has stability and reactivity. For cotton, perchlorate ions, hexafluorophosphate ions, tetrafluoroborate ions, sulfonate ions, sulfinate ions, and carboxylate ions are preferred.
바람직한 광산발생제의 구체예로서는, 이하의 것을 들 수 있다.Specific examples of preferable photoacid generators include the following.
[화학식 33][Formula 33]
[화학식 34][Formula 34]
[화학식 35][Formula 35]
[화학식 36][Formula 36]
광산발생제는, 수지 조성물의 전고형분에 대하여, 0.1~20질량% 사용하는 것이 바람직하고, 0.5~18질량% 사용하는 것이 보다 바람직하며, 0.5~10질량% 사용하는 것이 더 바람직하고, 0.5~3질량% 사용하는 것이 한층 바람직하며, 0.5~1.2질량% 사용하는 것이 보다 한층 바람직하다.The photoacid generator is preferably used in an amount of 0.1 to 20% by mass, more preferably in an amount of 0.5 to 18% by mass, more preferably in an amount of 0.5 to 10% by mass, and preferably in an amount of 0.5 to 10% by mass, based on the total solid content of the resin composition. It is more preferable to use 3% by mass, and it is even more preferable to use 0.5 to 1.2% by mass.
광산발생제는, 1종 단독으로 사용되어도 되고, 복수 종의 조합으로 사용되어도 된다. 복수 종의 조합인 경우에는, 그들의 합계량이 상기 범위에 있는 것이 바람직하다.A photoacid generator may be used individually by 1 type, and may be used in the combination of multiple types. In the case of a combination of a plurality of types, it is preferable that the total amount thereof is within the above range.
또, 원하는 광원에 대하여, 감광성을 부여하기 위하여, 증감제와 병용하는 것도 바람직하다.Moreover, in order to impart photosensitivity with respect to a desired light source, it is also preferable to use together with a sensitizer.
<용제><Solvent>
본 발명의 수지 조성물은, 용제를 포함한다.The resin composition of the present invention contains a solvent.
용제는, 공지의 용제를 임의로 사용할 수 있다. 용제는 유기 용제가 바람직하다. 유기 용제로서는, 에스터류, 에터류, 케톤류, 환상 탄화 수소류, 설폭사이드류, 아마이드류, 유레아류, 알코올류 등의 화합물을 들 수 있다.A well-known solvent can be used arbitrarily as a solvent. The solvent is preferably an organic solvent. Examples of the organic solvent include compounds such as esters, ethers, ketones, cyclic hydrocarbons, sulfoxides, amides, ureas, and alcohols.
에스터류로서, 예를 들면, 아세트산 에틸, 아세트산-n-뷰틸, 아세트산 아이소뷰틸, 아세트산 헥실, 폼산 아밀, 아세트산 아이소아밀, 프로피온산 뷰틸, 뷰티르산 아이소프로필, 뷰티르산 에틸, 뷰티르산 뷰틸, 락트산 메틸, 락트산 에틸, γ-뷰티로락톤, ε-카프로락톤, δ-발레로락톤, 알킬옥시아세트산 알킬(예를 들면, 알킬옥시아세트산 메틸, 알킬옥시아세트산 에틸, 알킬옥시아세트산 뷰틸(예를 들면, 메톡시아세트산 메틸, 메톡시아세트산 에틸, 메톡시아세트산 뷰틸, 에톡시아세트산 메틸, 에톡시아세트산 에틸 등)), 3-알킬옥시프로피온산 알킬에스터류(예를 들면, 3-알킬옥시프로피온산 메틸, 3-알킬옥시프로피온산 에틸 등(예를 들면, 3-메톡시프로피온산 메틸, 3-메톡시프로피온산 에틸, 3-에톡시프로피온산 메틸, 3-에톡시프로피온산 에틸 등)), 2-알킬옥시프로피온산 알킬에스터류(예를 들면, 2-알킬옥시프로피온산 메틸, 2-알킬옥시프로피온산 에틸, 2-알킬옥시프로피온산 프로필 등(예를 들면, 2-메톡시프로피온산 메틸, 2-메톡시프로피온산 에틸, 2-메톡시프로피온산 프로필, 2-에톡시프로피온산 메틸, 2-에톡시프로피온산 에틸)), 2-알킬옥시-2-메틸프로피온산 메틸 및 2-알킬옥시-2-메틸프로피온산 에틸(예를 들면, 2-메톡시-2-메틸프로피온산 메틸, 2-에톡시-2-메틸프로피온산 에틸 등), 피루브산 메틸, 피루브산 에틸, 피루브산 프로필, 아세토아세트산 메틸, 아세토아세트산 에틸, 2-옥소뷰탄산 메틸, 2-옥소뷰탄산 에틸, 헥산산 에틸, 헵탄산 에틸, 말론산 다이메틸, 말론산 다이에틸 등을 적합한 것으로서 들 수 있다.As esters, for example, ethyl acetate, n-butyl acetate, isobutyl acetate, hexyl acetate, amyl formate, isoamyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, Ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone, alkyloxyacetate (e.g. methyl alkyloxyacetate, ethyl alkyloxyacetate, butyl alkyloxyacetate (e.g. methoxy methyl acetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.), 3-alkyloxypropionate alkyl esters (e.g., 3-alkyloxymethylpropionate, 3-alkyloxy Ethyl propionate and the like (eg, 3-methoxymethylpropionate, 3-methoxyethylpropionate, 3-ethoxymethylpropionate, 3-ethoxyethylpropionate, etc.), 2-alkyloxypropionate alkyl esters (eg For example, 2-alkyloxymethylpropionate, 2-alkyloxyethylpropionate, 2-alkyloxypropylpropionate, etc. (e.g., 2-methoxymethylpropionate, 2-methoxyethylpropionate, 2-methoxypropylpropionate, 2 -methyl ethoxypropionate, ethyl 2-ethoxypropionate)), 2-alkyloxy-2-methylmethylpropionate and 2-alkyloxy-2-methylethylpropionate (e.g. 2-methoxy-2-methylpropionate) methyl, 2-ethoxy-2-methylethylpropionate, etc.), methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetoacetate, ethyl acetoacetate, methyl 2-oxobutanoate, ethyl 2-oxobutanoate, ethyl hexanoate, Ethyl heptanoate, dimethyl malonate, diethyl malonate and the like are mentioned as suitable ones.
에터류로서, 예를 들면, 에틸렌글라이콜다이메틸에터, 다이에틸렌글라이콜다이메틸에터, 다이에틸렌글라이콜다이에틸에터, 다이에틸렌글라이콜에틸메틸에터, 다이에틸렌글라이콜뷰틸메틸에터, 트라이에틸렌글라이콜다이메틸에터, 테트라에틸렌글라이콜다이메틸에터, 테트라하이드로퓨란, 에틸렌글라이콜모노메틸에터, 에틸렌글라이콜모노에틸에터, 메틸셀로솔브아세테이트, 에틸셀로솔브아세테이트, 다이에틸렌글라이콜모노메틸에터, 다이에틸렌글라이콜모노에틸에터, 다이에틸렌글라이콜모노뷰틸에터, 프로필렌글라이콜모노메틸에터, 프로필렌글라이콜다이메틸에터, 프로필렌글라이콜모노메틸에터아세테이트, 프로필렌글라이콜모노에틸에터아세테이트, 에틸렌글라이콜모노뷰틸에터, 에틸렌글라이콜모노뷰틸에터아세테이트, 다이에틸렌글라이콜에틸메틸에터, 프로필렌글라이콜모노프로필에터아세테이트, 다이프로필렌글라이콜다이메틸에터 등을 적합한 것으로서 들 수 있다.As ethers, for example, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol Lycol butyl methyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl Cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, Propylene glycol dimethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether, ethylene glycol monobutyl ether acetate, diethylene Glycol ethyl methyl ether, propylene glycol monopropyl ether acetate, dipropylene glycol dimethyl ether, etc. are mentioned as suitable ones.
케톤류로서, 예를 들면, 메틸에틸케톤, 사이클로헥산온, 사이클로펜탄온, 2-헵탄온, 3-헵탄온, 3-메틸사이클로헥산온, 레보글루코센온, 다이하이드로레보글루코센온 등을 적합한 것으로서 들 수 있다.Suitable ketones include, for example, methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, 3-methylcyclohexanone, levoglucosenone, dihydrolevoglucosenone, and the like. can
환상 탄화 수소류로서, 예를 들면, 톨루엔, 자일렌, 아니솔 등의 방향족 탄화 수소류, 리모넨 등의 환식 터펜류를 적합한 것으로서 들 수 있다.As the cyclic hydrocarbons, suitable examples thereof include aromatic hydrocarbons such as toluene, xylene and anisole, and cyclic terpenes such as limonene.
설폭사이드류로서, 예를 들면, 다이메틸설폭사이드를 적합한 것으로서 들 수 있다.As sulfoxides, for example, dimethyl sulfoxide is mentioned as a suitable one.
아마이드류로서, N-메틸-2-피롤리돈, N-에틸-2-피롤리돈, N-사이클로헥실-2-피롤리돈, N,N-다이메틸아세트아마이드, N,N-다이메틸폼아마이드, N,N-다이메틸아이소뷰틸아마이드, 3-메톡시-N,N-다이메틸프로피온아마이드, 3-뷰톡시-N,N-다이메틸프로피온아마이드, N-폼일모폴린, N-아세틸모폴린 등을 적합한 것으로서 들 수 있다.As amides, N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethyl Formamide, N,N-dimethylisobutylamide, 3-methoxy-N,N-dimethylpropionamide, 3-butoxy-N,N-dimethylpropionamide, N-formylmorpholine, N-acetyl Morpholine etc. are mentioned as a suitable thing.
유레아류로서, N,N,N',N'-테트라메틸유레아, 1,3-다이메틸-2-이미다졸리딘온 등을 적합한 것으로서 들 수 있다.As ureas, N,N,N',N'-tetramethylurea, 1,3-dimethyl-2-imidazolidinone, etc. are mentioned as suitable ones.
알코올류로서, 메탄올, 에탄올, 1-프로판올, 2-프로판올, 1-뷰탄올, 1-펜탄올, 1-헥산올, 벤질알코올, 에틸렌글라이콜모노메틸에터, 1-메톡시-2-프로판올, 2-에톡시에탄올, 다이에틸렌글라이콜모노에틸에터, 다이에틸렌글라이콜모노헥실에터, 트라이에틸렌글라이콜모노메틸에터, 프로필렌글라이콜모노에틸에터, 프로필렌글라이콜모노메틸에터, 폴리에틸렌글라이콜모노메틸에터, 폴리프로필렌글라이콜, 테트라에틸렌글라이콜, 에틸렌글라이콜모노뷰틸에터, 에틸렌글라이콜모노벤질에터, 에틸렌글라이콜모노페닐에터, 메틸페닐카비놀, n-아밀알코올, 메틸아밀알코올, 및, 다이아세톤알코올 등을 들 수 있다.As alcohols, methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 1-pentanol, 1-hexanol, benzyl alcohol, ethylene glycol monomethyl ether, 1-methoxy-2- Propanol, 2-ethoxyethanol, diethylene glycol monoethyl ether, diethylene glycol monohexyl ether, triethylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol Colmonomethyl ether, polyethylene glycol monomethyl ether, polypropylene glycol, tetraethylene glycol, ethylene glycol monobutyl ether, ethylene glycol monobenzyl ether, ethylene glycol mono Phenyl ether, methylphenyl carbinol, n-amyl alcohol, methyl amyl alcohol, diacetone alcohol, etc. are mentioned.
용제는, 도포면 성상(性狀)의 개량 등의 관점에서, 2종 이상을 혼합하는 형태도 바람직하다.As for the solvent, a form in which two or more types are mixed is also preferable from the viewpoint of improving the properties of the coated surface.
본 발명에서는, 3-에톡시프로피온산 메틸, 3-에톡시프로피온산 에틸, 에틸셀로솔브아세테이트, 락트산 에틸, 다이에틸렌글라이콜다이메틸에터, 아세트산 뷰틸, 3-메톡시프로피온산 메틸, 2-헵탄온, 사이클로헥산온, 사이클로펜탄온, γ-뷰티로락톤, 다이메틸설폭사이드, 에틸카비톨아세테이트, 뷰틸카비톨아세테이트, N-메틸-2-피롤리돈, 프로필렌글라이콜메틸에터, 및 프로필렌글라이콜메틸에터아세테이트, 레보글루코센온, 다이하이드로레보글루코센온으로부터 선택되는 1종의 용제, 또는, 2종 이상으로 구성되는 혼합 용제가 바람직하다. 다이메틸설폭사이드와 γ-뷰티로락톤의 병용, 또는, N-메틸-2-피롤리돈과 락트산 에틸의 병용이 특히 바람직하다.In the present invention, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptane one, cyclohexanone, cyclopentanone, γ-butyrolactone, dimethyl sulfoxide, ethyl carbitol acetate, butyl carbitol acetate, N-methyl-2-pyrrolidone, propylene glycol methyl ether, and One solvent selected from propylene glycol methyl ether acetate, levoglucosenone, and dihydrolevoglucosenone, or a mixed solvent composed of two or more kinds is preferred. A combination of dimethyl sulfoxide and γ-butyrolactone or a combination of N-methyl-2-pyrrolidone and ethyl lactate is particularly preferred.
용제의 함유량은, 도포성의 관점에서, 본 발명의 수지 조성물의 전고형분 농도가 5~80질량%가 되는 양으로 하는 것이 바람직하고, 5~75질량%가 되는 양으로 하는 것이 보다 바람직하며, 10~70질량%가 되는 양으로 하는 것이 더 바람직하고, 20~70질량%가 되도록 하는 것이 한층 바람직하다. 용제 함유량은, 도막의 원하는 두께와 도포 방법에 따라 조절하면 된다.The content of the solvent is preferably an amount such that the total solid concentration of the resin composition of the present invention is 5 to 80% by mass, more preferably 5 to 75% by mass, from the viewpoint of applicability. It is more preferable to set it to 70 mass %, and it is more preferable to set it as 20 to 70 mass %. What is necessary is just to adjust solvent content according to the desired thickness of a coating film, and a coating method.
본 발명의 수지 조성물은, 용제를 1종만 함유하고 있어도 되고, 2종 이상 함유하고 있어도 된다. 용제를 2종 이상 함유하는 경우는, 그 합계가 상기 범위인 것이 바람직하다.The resin composition of this invention may contain only 1 type of solvent, and may contain 2 or more types of solvents. When containing 2 or more types of solvents, it is preferable that the sum total is the said range.
<산포착제><Diffusion scavenger>
본 발명의 수지 조성물은, 노광부터 가열까지의 경시에 따른 성능 변화를 저감시키기 위하여, 산포착제를 함유하는 것이 바람직하다. 여기에서 산포착제란, 계 내에 존재함으로써 발생산을 포착할 수 있는 화합물을 가리키며, 산성도가 낮고 pKa가 높은 화합물인 것이 바람직하다. 산포착제로서는, 아미노기를 갖는 화합물이 바람직하고, 1급 아민, 2급 아민, 3급 아민, 암모늄염, 3급 아마이드 등이 바람직하며, 1급 아민, 2급 아민, 3급 아민, 암모늄염이 바람직하고, 2급 아민, 3급 아민, 암모늄염이 보다 바람직하다.The resin composition of the present invention preferably contains an acid trapping agent in order to reduce the change in performance over time from exposure to heating. Here, the acid scavenger refers to a compound capable of trapping a generated acid by being present in the system, and is preferably a compound with low acidity and high pKa. As the acid trapping agent, a compound having an amino group is preferable, and a primary amine, a secondary amine, a tertiary amine, an ammonium salt, a tertiary amide, etc. are preferable, and a primary amine, a secondary amine, a tertiary amine, and an ammonium salt are preferable. And, secondary amines, tertiary amines, and ammonium salts are more preferable.
산포착제로서는, 이미다졸 구조, 다이아자바이사이클로 구조, 오늄 구조, 트라이알킬아민 구조, 아닐린 구조 또는 피리딘 구조를 갖는 화합물, 수산기 및/또는 에터 결합을 갖는 알킬아민 유도체, 수산기 및/또는 에터 결합을 갖는 아닐린 유도체 등을 바람직하게 들 수 있다. 오늄 구조를 갖는 경우, 산포착제는 암모늄, 다이아조늄, 아이오도늄, 설포늄, 포스포늄, 피리디늄 등으로부터 선택되는 양이온과, 산발생제가 발생하는 산보다 산성도가 낮은 산의 음이온을 갖는 염인 것이 바람직하다.As the acid scavenger, a compound having an imidazole structure, a diazabicyclo structure, an onium structure, a trialkylamine structure, an aniline structure or a pyridine structure, an alkylamine derivative having a hydroxyl group and/or ether bond, and a hydroxyl group and/or ether bond aniline derivatives having When it has an onium structure, the acid scavenger is a salt having a cation selected from ammonium, diazonium, iodonium, sulfonium, phosphonium, pyridinium, etc., and an anion of an acid having a lower acidity than the acid generated by the acid generator. it is desirable
이미다졸 구조를 갖는 산포착제로서는 이미다졸, 2,4,5-트라이페닐이미다졸, 벤즈이미다졸, 2-페닐벤즈이미다졸 등을 들 수 있다. 다이아자바이사이클로 구조를 갖는 산포착제로서는, 1,4-다이아자바이사이클로[2,2,2]옥테인, 1,5-다이아자바이사이클로[4,3,0]노느-5-엔, 1,8-다이아자바이사이클로[5,4,0]운데스-7-엔 등을 들 수 있다. 오늄 구조를 갖는 산포착제로서는 테트라뷰틸암모늄하이드록사이드, 트라이아릴설포늄하이드록사이드, 페나실설포늄하이드록사이드, 2-옥소알킬기를 갖는 설포늄하이드록사이드, 구체적으로는 트라이페닐설포늄하이드록사이드, 트리스(t-뷰틸페닐)설포늄하이드록사이드, 비스(t-뷰틸페닐)아이오도늄하이드록사이드, 페나실싸이오페늄하이드록사이드, 2-옥소프로필싸이오페늄하이드록사이드 등을 들 수 있다. 트라이알킬아민 구조를 갖는 산포착제로서는, 트라이(n-뷰틸)아민, 트라이(n-옥틸)아민 등을 들 수 있다. 아닐린 구조를 갖는 산포착제로서는, 2,6-다이아이소프로필아닐린, N,N-다이메틸아닐린, N,N-다이뷰틸아닐린, N,N-다이헥실아닐린 등을 들 수 있다. 피리딘 구조를 갖는 산포착제로서는, 피리딘, 4-메틸피리딘 등을 들 수 있다. 수산기 및/또는 에터 결합을 갖는 알킬아민 유도체로서는, 에탄올아민, 다이에탄올아민, 트라이에탄올아민, N-페닐다이에탄올아민, 트리스(메톡시에톡시에틸)아민 등을 들 수 있다. 수산기 및/또는 에터 결합을 갖는 아닐린 유도체로서는, N,N-비스(하이드록시에틸)아닐린 등을 들 수 있다.Examples of the acid trapping agent having an imidazole structure include imidazole, 2,4,5-triphenylimidazole, benzimidazole, and 2-phenylbenzimidazole. As the acid trapping agent having a diazabicyclo structure, 1,4-diazabicyclo[2,2,2]octane, 1,5-diazabicyclo[4,3,0]non-5-ene, 1, 8-diazabicyclo[5,4,0]undec-7-ene etc. are mentioned. As the acid scavenger having an onium structure, tetrabutylammonium hydroxide, triarylsulfonium hydroxide, phenacylsulfonium hydroxide, sulfonium hydroxide having a 2-oxoalkyl group, specifically triphenylsulfonium hydroxide oxide, tris(t-butylphenyl)sulfonium hydroxide, bis(t-butylphenyl)iodonium hydroxide, phenacylthiophenium hydroxide, 2-oxopropylthiophenium hydroxide, etc. can be heard Examples of acid scavengers having a trialkylamine structure include tri(n-butyl)amine and tri(n-octyl)amine. Examples of the acid trapping agent having an aniline structure include 2,6-diisopropylaniline, N,N-dimethylaniline, N,N-dibutylaniline, and N,N-dihexylaniline. Examples of the acid trapping agent having a pyridine structure include pyridine and 4-methylpyridine. Examples of the alkylamine derivative having a hydroxyl group and/or an ether bond include ethanolamine, diethanolamine, triethanolamine, N-phenyldiethanolamine, and tris(methoxyethoxyethyl)amine. As an aniline derivative which has a hydroxyl group and/or ether bond, N,N-bis (hydroxyethyl) aniline etc. are mentioned.
바람직한 산포착제의 구체예로서는, 에탄올아민, 다이에탄올아민, 트라이에탄올아민, 에틸아민, 다이에틸아민, 트라이에틸아민, 헥실아민, 도데실아민, 사이클로헥실아민, 사이클로헥실메틸아민, 사이클로헥실다이메틸아민, 아닐린, N-메틸아닐린, N,N-다이메틸아닐린, 다이페닐아민, 피리딘, 뷰틸아민, 아이소뷰틸아민, 다이뷰틸아민, 트라이뷰틸아민, 다이사이클로헥실아민, DBU(다이아자바이사이클로운데센), DABCO(1,4-다이아자바이사이클로[2.2.2]옥테인), N,N-다이아이소프로필에틸아민, 테트라메틸암모늄하이드록사이드, 에틸렌다이아민, 1,5-다이아미노펜테인, N-메틸헥실아민, N-메틸다이사이클로헥실아민, 트라이옥틸아민, N-에틸에틸렌다이아민, N,N-다이에틸에틸렌다이아민, N,N,N',N'-테트라뷰틸-1,6-헥세인다이아민, 스페르미딘, 다이아미노사이클로헥세인, 비스(2-메톡시에틸)아민, 피페리딘, 메틸피페리딘, 피페라진, 트로판, N-페닐벤질아민, 1,2-다이아닐리노에테인, 2-아미노에탄올, 톨루이딘, 아미노페놀, 헥실아닐린, 페닐렌다이아민, 페닐에틸아민, 다이벤질아민, 피롤, N-메틸피롤, 구아니딘, 아미노피롤리딘, 피라졸, 피라졸린, 아미노모폴린, 아미노알킬모폴린 등을 들 수 있다.Specific examples of preferred acid trapping agents include ethanolamine, diethanolamine, triethanolamine, ethylamine, diethylamine, triethylamine, hexylamine, dodecylamine, cyclohexylamine, cyclohexylmethylamine, cyclohexyldimethyl Amine, aniline, N-methylaniline, N,N-dimethylaniline, diphenylamine, pyridine, butylamine, isobutylamine, dibutylamine, tributylamine, dicyclohexylamine, DBU (diazabicycloundecene) ), DABCO (1,4-diazabicyclo[2.2.2]octane), N,N-diisopropylethylamine, tetramethylammonium hydroxide, ethylenediamine, 1,5-diaminopentane, N -Methylhexylamine, N-methyldicyclohexylamine, trioctylamine, N-ethylethylenediamine, N,N-diethylethylenediamine, N,N,N',N'-tetrabutyl-1,6 -hexanediamine, spermidine, diaminocyclohexane, bis(2-methoxyethyl)amine, piperidine, methylpiperidine, piperazine, tropane, N-phenylbenzylamine, 1,2 -Dianilinoethane, 2-aminoethanol, toluidine, aminophenol, hexylaniline, phenylenediamine, phenylethylamine, dibenzylamine, pyrrole, N-methylpyrrole, guanidine, aminopyrrolidine, pyrazole, pyrazole zoline, aminomorpholine, aminoalkylmorpholine and the like.
이들 산포착제는, 1종류를 단독으로 이용해도 되고, 2종류 이상을 조합하여 이용해도 된다.These acid trapping agents may be used individually by 1 type, or may be used in combination of 2 or more types.
본 발명에 관한 조성물은, 산포착제를 함유해도 되고 함유하지 않아도 되지만, 함유하는 경우, 산포착제의 함유량은, 조성물의 전고형분을 기준으로 하여, 통상은 0.001~10질량%이며, 바람직하게는 0.01~5질량%이다.The composition according to the present invention may or may not contain a dust trapping agent, but when it is contained, the content of the dust trapping agent is usually 0.001 to 10% by mass based on the total solids of the composition, preferably. is 0.01 to 5% by mass.
산발생제와 산포착제의 사용 비율은, 산발생제/산포착제(몰비)=2.5~300인 것이 바람직하다. 즉, 감도, 해상도의 점에서 몰비가 2.5 이상인 것이 바람직하고, 노광 후 가열 처리까지의 경시에 따른 릴리프 패턴의 굵어짐에 의한 해상도의 저하 억제의 점에서 300 이하가 바람직하다. 산발생제/산포착제(몰비)는, 보다 바람직하게는 5.0~200, 더 바람직하게는 7.0~150이다.The use ratio of the acid generator and the acid scavenger is preferably acid generator/sand scavenger (molar ratio) = 2.5 to 300. That is, the molar ratio is preferably 2.5 or more from the viewpoint of sensitivity and resolution, and preferably 300 or less from the viewpoint of suppressing the decrease in resolution due to the thickening of the relief pattern with the passage of time from exposure to heat treatment. The acid generator/dispersion complexing agent (molar ratio) is more preferably 5.0 to 200, still more preferably 7.0 to 150.
<열경화 촉진제><Heat curing accelerator>
수지 조성물은, 열경화 촉진제를 포함해도 된다.The resin composition may also contain a thermosetting accelerator.
열경화 촉진제로서는, 열중합 개시제, 열산발생제 등을 들 수 있다.Examples of the thermal curing accelerator include thermal polymerization initiators and thermal acid generators.
수지 조성물이 중합성 화합물로서 라디칼 가교제를 포함하는 경우는 열중합 개시제를, 다른 가교제를 포함하는 경우는 열산발생제를 포함하는 양태를 들 수 있다.When the resin composition contains a radical crosslinking agent as a polymerizable compound, a thermal polymerization initiator is included, and when it contains another crosslinking agent, an aspect including a thermal acid generating agent is exemplified.
〔열중합 개시제〕[Thermal polymerization initiator]
열중합 개시제로서는, 특히 열라디칼 중합 개시제를 포함해도 된다. 열라디칼 중합 개시제는, 열의 에너지에 의하여 라디칼을 발생하여, 중합성을 갖는 화합물의 중합 반응을 개시 또는 촉진시키는 화합물이다.As the thermal polymerization initiator, a thermal radical polymerization initiator may be particularly included. A thermal radical polymerization initiator is a compound that generates radicals by thermal energy to initiate or accelerate a polymerization reaction of a polymerizable compound.
열라디칼 중합 개시제로서, 구체적으로는, 일본 공개특허공보 2008-063554호의 단락 0074~0118에 기재되어 있는 화합물을 들 수 있으며, 이 내용은 본 명세서에 원용된다.As a thermal radical polymerization initiator, specifically, the compound described in Paragraph 0074 of Unexamined-Japanese-Patent No. 2008-063554 - 0118 is mentioned, This content is integrated in this specification.
열중합 개시제를 포함하는 경우, 그 함유량은, 본 발명의 수지 조성물의 전고형분에 대하여 0.1~30질량%인 것이 바람직하고, 보다 바람직하게는 0.1~20질량%이며, 더 바람직하게는 0.5~15질량%이다. 열중합 개시제는 1종만 함유하고 있어도 되고, 2종 이상 함유하고 있어도 된다. 열중합 개시제를 2종 이상 함유하는 경우는, 합계량이 상기 범위인 것이 바람직하다.When a thermal polymerization initiator is included, the content thereof is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, and further preferably 0.5 to 15% by mass with respect to the total solid content of the resin composition of the present invention. is mass %. The thermal polymerization initiator may contain only 1 type, and may contain 2 or more types. When containing 2 or more types of thermal polymerization initiators, it is preferable that the total amount is the said range.
〔열산발생제〕[thermal acid generator]
수지 조성물은, 열산발생제를 포함해도 된다.The resin composition may also contain a thermal acid generator.
열산발생제는, 가열에 의하여 산을 발생하여, 하이드록시메틸기, 알콕시메틸기 또는 아실옥시메틸기를 갖는 화합물, 에폭시 화합물, 옥세테인 화합물 및 벤즈옥사진 화합물로부터 선택되는 적어도 1종의 화합물의 가교 반응을 촉진시키는 효과가 있다.The thermal acid generator generates an acid by heating and causes a crosslinking reaction of at least one compound selected from compounds having a hydroxymethyl group, an alkoxymethyl group or an acyloxymethyl group, an epoxy compound, an oxetane compound, and a benzoxazine compound. has a stimulating effect.
열산발생제의 열분해 개시 온도는, 50℃~270℃가 바람직하고, 50℃~250℃가 보다 바람직하다. 또, 조성물을 기판에 도포한 후의 건조(프리베이크: 약 70~140℃) 시에는 산을 발생시키지 않고, 그 후의 노광, 현상으로 패터닝한 후의 최종 가열(큐어: 약 100~400℃) 시에 산을 발생시키는 것을 열산발생제로서 선택하면, 현상 시의 감도 저하를 억제할 수 있기 때문에 바람직하다.The thermal decomposition start temperature of the thermal acid generator is preferably 50°C to 270°C, and more preferably 50°C to 250°C. In addition, acid is not generated during drying (prebaking: about 70 to 140° C.) after coating the composition on a substrate, and at the time of final heating (curing: about 100 to 400° C.) after patterning by subsequent exposure and development. Selecting an acid-generating agent as the thermal acid generator is preferable because the decrease in sensitivity during development can be suppressed.
열분해 개시 온도는, 열산발생제를 내압 캡슐 중 5℃/분으로 500℃까지 가열한 경우에, 가장 온도가 낮은 발열 피크의 피크 온도로서 구해진다.The thermal decomposition start temperature is obtained as the peak temperature of the exothermic peak having the lowest temperature when the thermal acid generator is heated up to 500°C at 5°C/min in a pressure-resistant capsule.
열분해 개시 온도를 측정할 때에 이용되는 기기로서는, Q2000(TA인스트루먼츠사제) 등을 들 수 있다.Q2000 (made by TA Instruments) etc. are mentioned as a device used when measuring the thermal decomposition start temperature.
열산발생제로부터 발생하는 산은 강(强)산이 바람직하고, 예를 들면, p-톨루엔설폰산, 벤젠설폰산 등의 아릴설폰산, 메테인설폰산, 에테인설폰산, 뷰테인설폰산 등의 알킬설폰산, 혹은 트라이플루오로메테인설폰산 등의 할로알킬설폰산 등이 바람직하다. 이와 같은 열산발생제의 예로서는, 일본 공개특허공보 2013-072935호의 단락 0055에 기재된 것을 들 수 있다.The acid generated from the thermal acid generator is preferably a strong acid, and examples thereof include arylsulfonic acids such as p-toluenesulfonic acid and benzenesulfonic acid, and alkylsulfonic acids such as methanesulfonic acid, ethanesulfonic acid and butanesulfonic acid. Haloalkylsulfonic acids, such as phonic acid or trifluoromethanesulfonic acid, etc. are preferable. As an example of such a thermal acid generator, the thing of Unexamined-Japanese-Patent No. 2013-072935 Paragraph 0055 is mentioned.
그중에서도, 경화물(경화막) 중의 잔류가 적고 경화물(경화막) 물성을 저하시키기 어렵다는 관점에서, 탄소수 1~4의 알킬설폰산이나 탄소수 1~4의 할로알킬설폰산을 발생하는 것이 보다 바람직하며, 메테인설폰산(4-하이드록시페닐)다이메틸설포늄, 메테인설폰산(4-((메톡시카보닐)옥시)페닐)다이메틸설포늄, 메테인설폰산 벤질(4-하이드록시페닐)메틸설포늄, 메테인설폰산 벤질(4-((메톡시카보닐)옥시)페닐)메틸설포늄, 메테인설폰산(4-하이드록시페닐)메틸((2-메틸페닐)메틸)설포늄, 트라이플루오로메테인설폰산(4-하이드록시페닐)다이메틸설포늄, 트라이플루오로메테인설폰산(4-((메톡시카보닐)옥시)페닐)다이메틸설포늄, 트라이플루오로메테인설폰산 벤질(4-하이드록시페닐)메틸설포늄, 트라이플루오로메테인설폰산 벤질(4-((메톡시카보닐)옥시)페닐)메틸설포늄, 트라이플루오로메테인설폰산(4-하이드록시페닐)메틸((2-메틸페닐)메틸)설포늄, 3-(5-(((프로필설폰일)옥시)이미노)싸이오펜-2(5H)-이리덴)-2-(o-톨릴)프로페인나이트릴, 2,2-비스(3-(메테인설폰일아미노)-4-하이드록시페닐)헥사플루오로프로페인이, 열산발생제로서 바람직하다.Among them, it is more preferable to generate an alkylsulfonic acid having 1 to 4 carbon atoms or a haloalkylsulfonic acid having 1 to 4 carbon atoms from the viewpoint of less residual in the cured product (cured film) and less difficulty in reducing the physical properties of the cured product (cured film). and methanesulfonic acid (4-hydroxyphenyl)dimethylsulfonium, methanesulfonic acid (4-((methoxycarbonyl)oxy)phenyl)dimethylsulfonium, methanesulfonic acid benzyl (4-hydroxyphenyl) Methylsulfonium, Methanesulfonate Benzyl(4-((methoxycarbonyl)oxy)phenyl)methylsulfonium, Methanesulfonate(4-hydroxyphenyl)methyl((2-methylphenyl)methyl)sulfonium, Trifluoro Romethenesulfonic acid (4-hydroxyphenyl)dimethylsulfonium, trifluoromethanesulfonic acid (4-((methoxycarbonyl)oxy)phenyl)dimethylsulfonium, trifluoromethanesulfonic acid benzyl (4 -Hydroxyphenyl) methylsulfonium, trifluoromethanesulfonic acid benzyl (4-((methoxycarbonyl) oxy) phenyl) methylsulfonium, trifluoromethanesulfonic acid (4-hydroxyphenyl) methyl (( 2-methylphenyl)methyl)sulfonium, 3-(5-(((propylsulfonyl)oxy)imino)thiophene-2(5H)-iridene)-2-(o-tolyl)propanenitrile, 2,2-bis(3-(methanesulfonylamino)-4-hydroxyphenyl)hexafluoropropane is preferable as the thermal acid generator.
또, 일본 공개특허공보 2013-167742호의 단락 0059에 기재된 화합물도 열산발생제로서 바람직하다.Moreover, the compound of Paragraph 0059 of Unexamined-Japanese-Patent No. 2013-167742 is also preferable as a thermal acid generator.
열산발생제의 함유량은, 수지 100질량부에 대하여 0.01질량부 이상이 바람직하고, 0.1질량부 이상이 보다 바람직하다. 0.01질량부 이상 함유함으로써, 가교 반응이 촉진되기 때문에, 경화물(경화막)의 기계 특성 및 내용제성을 보다 향상시킬 수 있다. 또, 경화물(경화막)의 전기 절연성의 관점에서, 20질량부 이하가 바람직하고, 15질량부 이하가 보다 바람직하며, 10질량부 이하가 더 바람직하다.The content of the thermal acid generator is preferably 0.01 part by mass or more, more preferably 0.1 part by mass or more, with respect to 100 parts by mass of the resin. Since the crosslinking reaction is accelerated by containing 0.01 part by mass or more, the mechanical properties and solvent resistance of the cured product (cured film) can be further improved. Moreover, from a viewpoint of the electric insulating property of hardened|cured material (cured film), 20 mass parts or less is preferable, 15 mass parts or less are more preferable, and 10 mass parts or less are still more preferable.
<염기 발생제><Base generator>
본 발명의 수지 조성물은, 염기 발생제를 포함해도 된다. 여기에서, 염기 발생제란, 물리적 또는 화학적인 작용에 의하여 염기를 발생할 수 있는 화합물이다. 본 발명의 수지 조성물에 있어 바람직한 염기 발생제로서는, 열염기 발생제 및 광염기 발생제를 들 수 있다.The resin composition of the present invention may also contain a base generator. Here, a base generator is a compound capable of generating a base by physical or chemical action. Preferred base generators for the resin composition of the present invention include thermal base generators and photobase generators.
특히, 수지 조성물이 환화 수지의 전구체를 포함하는 경우, 수지 조성물은 염기 발생제를 포함하는 것이 바람직하다. 수지 조성물이 열염기 발생제를 함유함으로써, 예를 들면 가열에 의하여 전구체의 환화 반응을 촉진시킬 수 있어, 경화물의 기계 특성이나 내약품성이 양호한 것이 되고, 예를 들면 반도체 패키지 중에 포함되는 재배선층용 층간 절연막으로서의 성능이 양호해진다.In particular, when the resin composition contains a precursor of a cyclization resin, it is preferable that the resin composition contains a base generator. By containing a thermal base generator in the resin composition, the cyclization reaction of the precursor can be accelerated by, for example, heating, and the mechanical properties and chemical resistance of the cured product are improved, for example, for a redistribution layer included in a semiconductor package. The performance as an interlayer insulating film becomes good.
염기 발생제로서는, 이온형 염기 발생제여도 되고, 비이온형 염기 발생제여도 된다. 염기 발생제로부터 발생하는 염기로서는, 예를 들면, 2급 아민, 3급 아민을 들 수 있다.The base generator may be an ionic base generator or a nonionic base generator. Examples of the base generated from the base generator include secondary amines and tertiary amines.
본 발명에 관한 염기 발생제에 대하여 특별히 제한은 없으며, 공지의 염기 발생제를 이용할 수 있다. 공지의 염기 발생제로서는, 예를 들면, 카바모일옥심 화합물, 카바모일하이드록실아민 화합물, 카밤산 화합물, 폼아마이드 화합물, 아세트아마이드 화합물, 카바메이트 화합물, 벤질카바메이트 화합물, 나이트로벤질카바메이트 화합물, 설폰아마이드 화합물, 이미다졸 유도체 화합물, 아민이미드 화합물, 피리딘 유도체 화합물, α-아미노아세토페논 유도체 화합물, 4급 암모늄염 유도체 화합물, 피리디늄염, α-락톤환 유도체 화합물, 아민이미드 화합물, 프탈이미드 유도체 화합물, 아실옥시이미노 화합물 등을 이용할 수 있다.The base generator according to the present invention is not particularly limited, and known base generators can be used. Examples of known base generators include carbamoyloxime compounds, carbamoylhydroxylamine compounds, carbamic acid compounds, formamide compounds, acetamide compounds, carbamate compounds, benzylcarbamate compounds, and nitrobenzylcarbamate compounds. , sulfonamide compound, imidazole derivative compound, amineimide compound, pyridine derivative compound, α-aminoacetophenone derivative compound, quaternary ammonium salt derivative compound, pyridinium salt, α-lactone ring derivative compound, amineimide compound, phthal Imide derivative compounds, acyloxyimino compounds and the like can be used.
비이온형 염기 발생제의 구체적인 화합물로서는, 식 (B1), 식 (B2), 또는 식 (B3)으로 나타나는 화합물을 들 수 있다.As a specific compound of a nonionic base generator, the compound represented by a formula (B1), a formula (B2), or a formula (B3) is mentioned.
[화학식 37][Formula 37]
식 (B1) 및 식 (B2) 중, Rb1, Rb2 및 Rb3은 각각 독립적으로, 제3급 아민 구조를 갖지 않는 유기기, 할로젠 원자 또는 수소 원자이다. 단, Rb1 및 Rb2가 동시에 수소 원자가 되는 경우는 없다. 또, Rb1, Rb2 및 Rb3은 모두 카복시기를 갖는 경우는 없다. 또한, 본 명세서에서 제3급 아민 구조란, 3가의 질소 원자의 3개의 결합손이 모두 탄화 수소계의 탄소 원자와 공유 결합되어 있는 구조를 가리킨다. 따라서, 결합한 탄소 원자가 카보닐기를 이루는 탄소 원자인 경우, 즉 질소 원자와 함께 아마이드기를 형성하는 경우는 이에 한정되는 것은 아니다.In formulas (B1) and (B2), Rb 1 , Rb 2 and Rb 3 are each independently an organic group without a tertiary amine structure, a halogen atom or a hydrogen atom. However, there is no case where Rb 1 and Rb 2 simultaneously become a hydrogen atom. In addition, none of Rb 1 , Rb 2 and Rb 3 have a carboxy group. In addition, in this specification, the tertiary amine structure refers to a structure in which all three bonds of a trivalent nitrogen atom are covalently bonded to a hydrocarbon-based carbon atom. Therefore, when the bonded carbon atom is a carbon atom constituting a carbonyl group, that is, when an amide group is formed together with a nitrogen atom, it is not limited thereto.
식 (B1), (B2) 중, Rb1, Rb2 및 Rb3은, 이들 중 적어도 1개가 환상 구조를 포함하는 것이 바람직하고, 적어도 2개가 환상 구조를 포함하는 것이 보다 바람직하다. 환상 구조로서는, 단환 및 축합환 중 어느 것이어도 되고, 단환 또는 단환이 2개 축합된 축합환이 바람직하다. 단환은, 5원환 또는 6원환이 바람직하고, 6원환이 바람직하다. 단환은, 사이클로헥세인환 및 벤젠환이 바람직하고, 사이클로헥세인환이 보다 바람직하다.In formulas (B1) and (B2), as for Rb 1 , Rb 2 and Rb 3 , it is preferable that at least one of these includes a cyclic structure, and it is more preferable that at least two of these include a cyclic structure. As the cyclic structure, either a monocycle or a condensed ring may be used, and a monocycle or a condensed ring in which two monocycles are condensed is preferable. A 5-membered ring or a 6-membered ring is preferable, and, as for a monocyclic ring, a 6-membered ring is preferable. As for a monocyclic ring, a cyclohexane ring and a benzene ring are preferable, and a cyclohexane ring is more preferable.
보다 구체적으로 Rb1 및 Rb2는, 수소 원자, 알킬기(탄소수 1~24가 바람직하고, 2~18이 보다 바람직하며, 3~12가 더 바람직하다), 알켄일기(탄소수 2~24가 바람직하고, 2~18이 보다 바람직하며, 3~12가 더 바람직하다), 아릴기(탄소수 6~22가 바람직하고, 6~18이 보다 바람직하며, 6~10이 더 바람직하다), 또는 아릴알킬기(탄소수 7~25가 바람직하고, 7~19가 보다 바람직하며, 7~12가 더 바람직하다)인 것이 바람직하다. 이들 기는, 본 발명의 효과를 나타내는 범위에서 치환기를 갖고 있어도 된다. Rb1과 Rb2는 서로 결합되어 환을 형성하고 있어도 된다. 형성되는 환으로서는, 4~7원의 함질소 복소환이 바람직하다. Rb1 및 Rb2는 특히, 치환기를 가져도 되는 직쇄, 분기, 또는 환상의 알킬기(탄소수 1~24가 바람직하고, 2~18이 보다 바람직하며, 3~12가 더 바람직하다)인 것이 바람직하고, 치환기를 가져도 되는 사이클로알킬기(탄소수 3~24가 바람직하고, 3~18이 보다 바람직하며, 3~12가 더 바람직하다)인 것이 보다 바람직하며, 치환기를 가져도 되는 사이클로헥실기가 더 바람직하다.More specifically, Rb 1 and Rb 2 are a hydrogen atom, an alkyl group (preferably 1 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, still more preferably 3 to 12 carbon atoms), an alkenyl group (preferably 2 to 24 carbon atoms, , 2 to 18 are more preferred, 3 to 12 are more preferred), an aryl group (6 to 22 carbon atoms are preferred, 6 to 18 are more preferred, and 6 to 10 are more preferred), or an arylalkyl group ( It is preferably 7 to 25 carbon atoms, more preferably 7 to 19, more preferably 7 to 12). These groups may have a substituent within the range of exhibiting the effect of the present invention. Rb 1 and Rb 2 may be bonded to each other to form a ring. As the ring formed, a 4- to 7-membered nitrogen-containing heterocycle is preferable. Rb 1 and Rb 2 are particularly preferably a straight-chain, branched, or cyclic alkyl group which may have a substituent (preferably 1 to 24 carbon atoms, more preferably 2 to 18, and even more preferably 3 to 12). , It is more preferably a cycloalkyl group (preferably 3 to 24 carbon atoms, more preferably 3 to 18, and still more preferably 3 to 12) which may have a substituent, and a cyclohexyl group that may have a substituent is more preferable do.
Rb3으로서는, 알킬기(탄소수 1~24가 바람직하고, 2~18이 보다 바람직하며, 3~12가 더 바람직하다), 아릴기(탄소수 6~22가 바람직하고, 6~18이 보다 바람직하며, 6~10이 더 바람직하다), 알켄일기(탄소수 2~24가 바람직하고, 2~12가 보다 바람직하며, 2~6이 더 바람직하다), 아릴알킬기(탄소수 7~23이 바람직하고, 7~19가 보다 바람직하며, 7~12가 더 바람직하다), 아릴알켄일기(탄소수 8~24가 바람직하고, 8~20이 보다 바람직하며, 8~16이 더 바람직하다), 알콕실기(탄소수 1~24가 바람직하고, 2~18이 보다 바람직하며, 3~12가 더 바람직하다), 아릴옥시기(탄소수 6~22가 바람직하고, 6~18이 보다 바람직하며, 6~12가 더 바람직하다), 또는 아릴알킬옥시기(탄소수 7~23이 바람직하고, 7~19가 보다 바람직하며, 7~12가 더 바람직하다)를 들 수 있다. 그중에서도, 사이클로알킬기(탄소수 3~24가 바람직하고, 3~18이 보다 바람직하며, 3~12가 더 바람직하다), 아릴알켄일기, 아릴알킬옥시기가 바람직하다. Rb3은 본 발명의 효과를 나타내는 범위에서 치환기를 더 갖고 있어도 된다.As Rb 3 , an alkyl group (preferably 1 to 24 carbon atoms, more preferably 2 to 18, and still more preferably 3 to 12), an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18, 6-10 are more preferable), an alkenyl group (C2-24 are preferable, 2-12 are more preferable, 2-6 are more preferable), an arylalkyl group (C7-23 are preferable, 7-12 are more preferable) 19 is more preferable, and 7 to 12 are more preferable), an arylalkenyl group (C 8 to 24 is preferable, 8 to 20 are more preferable, and 8 to 16 are more preferable), an alkoxyl group (C 1 to C 16 is preferable) 24 is preferable, 2 to 18 are more preferable, 3 to 12 are more preferable), aryloxy group (C6 to 22 are preferable, 6 to 18 are more preferable, 6 to 12 are still more preferable) , or an arylalkyloxy group (preferably having 7 to 23 carbon atoms, more preferably having 7 to 19 carbon atoms, and even more preferably having 7 to 12 carbon atoms). Especially, a cycloalkyl group (C3-C24 is preferable, 3-18 are more preferable, and 3-12 are still more preferable), an arylalkenyl group, and an arylalkyloxy group are preferable. Rb 3 may further have a substituent within the range showing the effect of the present invention.
식 (B1)로 나타나는 화합물은, 하기 식 (B1-1) 또는 하기 식 (B1-2)로 나타나는 화합물인 것이 바람직하다.It is preferable that the compound represented by formula (B1) is a compound represented by the following formula (B1-1) or the following formula (B1-2).
[화학식 38][Formula 38]
식 중, Rb11 및 Rb12, 및, Rb31 및 Rb32는, 각각, 식 (B1)에 있어서의 Rb1 및 Rb2와 동일하다.In the formula, Rb 11 and Rb 12 , and Rb 31 and Rb 32 are the same as Rb 1 and Rb 2 in the formula (B1), respectively.
Rb13은 알킬기(탄소수 1~24가 바람직하고, 2~18이 보다 바람직하며, 3~12가 더 바람직하다), 알켄일기(탄소수 2~24가 바람직하고, 2~18이 보다 바람직하며, 3~12가 더 바람직하다), 아릴기(탄소수 6~22가 바람직하고, 6~18이 보다 바람직하며, 6~12가 더 바람직하다), 아릴알킬기(탄소수 7~23이 바람직하고, 7~19가 보다 바람직하며, 7~12가 더 바람직하다)이며, 본 발명의 효과를 나타내는 범위에서 치환기를 갖고 있어도 된다. 그중에서도, Rb13은 아릴알킬기가 바람직하다.Rb 13 is an alkyl group (preferably 1 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, and still more preferably 3 to 12 carbon atoms), an alkenyl group (preferably 2 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, and 3 -12 is more preferable), aryl group (C6-22 is preferable, 6-18 are more preferable, 6-12 are still more preferable), arylalkyl group (C7-23 is preferable, 7-19 is more preferable, and 7 to 12 are more preferable), and may have a substituent within the range showing the effect of the present invention. Among them, Rb 13 is preferably an arylalkyl group.
Rb33 및 Rb34는, 각각 독립적으로, 수소 원자, 알킬기(탄소수 1~12가 바람직하고, 1~8이 보다 바람직하며, 1~3이 더 바람직하다), 알켄일기(탄소수 2~12가 바람직하고, 2~8이 보다 바람직하며, 2~3이 더 바람직하다), 아릴기(탄소수 6~22가 바람직하고, 6~18이 보다 바람직하며, 6~10이 더 바람직하다), 아릴알킬기(탄소수 7~23이 바람직하고, 7~19가 보다 바람직하며, 7~11이 더 바람직하다)이며, 수소 원자가 바람직하다.Rb 33 and Rb 34 are each independently a hydrogen atom, an alkyl group (preferably 1 to 12 carbon atoms, more preferably 1 to 8 carbon atoms, still more preferably 1 to 3 carbon atoms), an alkenyl group (preferably 2 to 12 carbon atoms) and, more preferably 2 to 8, more preferably 2 to 3), an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18, more preferably 6 to 10), an arylalkyl group ( 7-23 carbon atoms are preferable, 7-19 are more preferable, and 7-11 are still more preferable), and a hydrogen atom is preferable.
Rb35는, 알킬기(탄소수 1~24가 바람직하고, 1~12가 보다 바람직하며, 3~8이 더 바람직하다), 알켄일기(탄소수 2~12가 바람직하고, 2~10이 보다 바람직하며, 3~8이 더 바람직하다), 아릴기(탄소수 6~22가 바람직하고, 6~18이 보다 바람직하며, 6~12가 더 바람직하다), 아릴알킬기(탄소수 7~23이 바람직하고, 7~19가 보다 바람직하며, 7~12가 더 바람직하다)이며, 아릴기가 바람직하다.Rb 35 is an alkyl group (preferably 1 to 24 carbon atoms, more preferably 1 to 12, more preferably 3 to 8 carbon atoms), an alkenyl group (preferably 2 to 12 carbon atoms, more preferably 2 to 10 carbon atoms, 3-8 are more preferable), aryl group (C6-22 are preferable, 6-18 are more preferable, 6-12 are more preferable), arylalkyl group (C7-23 are preferable, 7-18 are more preferable) 19 is more preferable, and 7 to 12 are more preferable), and an aryl group is preferable.
식 (B1-1)로 나타나는 화합물은, 식 (B1-1a)로 나타나는 화합물도 또한 바람직하다.As for the compound represented by formula (B1-1), the compound represented by formula (B1-1a) is also preferable.
[화학식 39][Formula 39]
Rb11 및 Rb12는 식 (B1-1)에 있어서의 Rb11 및 Rb12와 동일한 의미이다.Rb 11 and Rb 12 have the same meaning as Rb 11 and Rb 12 in Formula (B1-1).
Rb15 및 Rb16은 수소 원자, 알킬기(탄소수 1~12가 바람직하고, 1~6이 보다 바람직하며, 1~3이 더 바람직하다), 알켄일기(탄소수 2~12가 바람직하고, 2~6이 보다 바람직하며, 2~3이 더 바람직하다), 아릴기(탄소수 6~22가 바람직하고, 6~18이 보다 바람직하며, 6~10이 더 바람직하다), 아릴알킬기(탄소수 7~23이 바람직하고, 7~19가 보다 바람직하며, 7~11이 더 바람직하다)이며, 수소 원자 또는 메틸기가 바람직하다.Rb 15 and Rb 16 are a hydrogen atom, an alkyl group (preferably 1 to 12 carbon atoms, more preferably 1 to 6 carbon atoms, and still more preferably 1 to 3 carbon atoms), an alkenyl group (preferably 2 to 12 carbon atoms and 2 to 6 carbon atoms) More preferably, 2 to 3 are more preferable), an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18, and still more preferably 6 to 10), an arylalkyl group (7 to 23 carbon atoms) preferably, 7 to 19 are more preferable, and 7 to 11 are still more preferable), and a hydrogen atom or a methyl group is preferable.
Rb17은 알킬기(탄소수 1~24가 바람직하고, 1~12가 보다 바람직하며, 3~8이 더 바람직하다), 알켄일기(탄소수 2~12가 바람직하고, 2~10이 보다 바람직하며, 3~8이 더 바람직하다), 아릴기(탄소수 6~22가 바람직하고, 6~18이 보다 바람직하며, 6~12가 더 바람직하다), 아릴알킬기(탄소수 7~23이 바람직하고, 7~19가 보다 바람직하며, 7~12가 더 바람직하다)이며, 그중에서도 아릴기가 바람직하다.Rb 17 is an alkyl group (preferably 1 to 24 carbon atoms, more preferably 1 to 12, and even more preferably 3 to 8), an alkenyl group (preferably 2 to 12 carbon atoms, more preferably 2 to 10 carbon atoms, and 3 -8 is more preferable), aryl group (C6-22 is preferable, 6-18 are more preferable, 6-12 are still more preferable), arylalkyl group (C7-23 is preferable, 7-19 is more preferable, and 7 to 12 are more preferable), and among them, an aryl group is preferable.
[화학식 40][Formula 40]
(B3)(B3)
식 (B3)에 있어서, L은, 인접하는 산소 원자와 탄소 원자를 연결하는 연결쇄의 경로 상에 포화 탄화 수소기를 갖는 2가의 탄화 수소기로서, 연결쇄의 경로 상 의 원자수가 3 이상인 탄화 수소기를 나타낸다. 또, RN1 및 RN2는, 각각 독립적으로 1가의 유기기를 나타낸다.In formula (B3), L is a divalent hydrocarbon group having a saturated hydrocarbon group on the path of a link chain connecting adjacent oxygen atoms and carbon atoms, and is a hydrocarbon having 3 or more atoms on the path of the link chain represents a flag. Further, R N1 and R N2 each independently represent a monovalent organic group.
본 명세서에 있어서, "연결쇄"란, 연결 대상의 2개의 원자 또는 원자군의 사이를 연결하는 경로 상의 원자쇄 중, 이들 연결 대상을 최단(최소 원자수)으로 연결하는 것을 말한다. 예를 들면, 하기 식으로 나타나는 화합물에 있어서, L은, 페닐렌에틸렌기로 구성되고, 포화 탄화 수소기로서 에틸렌기를 가지며, 연결쇄는 4개의 탄소 원자로 구성되어 있고, 연결쇄의 경로 상의 원자수(즉, 연결쇄를 구성하는 원자의 수이며, 이하, "연결쇄 길이" 혹은 "연결쇄의 길이"라고도 한다.)는 4이다. In this specification, "linked chain" refers to linking these linking objects in the shortest (minimum number of atoms) among atomic chains on a path connecting between two atoms or groups of atoms to be linked. For example, in the compound represented by the following formula, L is composed of a phenylene ethylene group, has an ethylene group as a saturated hydrocarbon group, the linked chain is composed of 4 carbon atoms, and the number of atoms on the path of the linked chain ( That is, the number of atoms constituting the linked chain, hereinafter also referred to as “linked chain length” or “linked chain length”) is 4.
[화학식 41][Formula 41]
식 (B3)에 있어서의 L 중의 탄소수(연결쇄 중의 탄소 원자 이외의 탄소 원자도 포함한다)는, 3~24인 것이 바람직하다. 상한은, 12 이하인 것이 보다 바람직하며, 10 이하인 것이 더 바람직하고, 8 이하인 것이 특히 바람직하다. 하한은, 4 이상인 것이 보다 바람직하다. 상기 분자 내 환화 반응을 신속하게 진행시키는 관점에서, L의 연결쇄 길이의 상한은, 12 이하인 것이 바람직하고, 8 이하인 것이 보다 바람직하며, 6 이하인 것이 더 바람직하고, 5 이하인 것이 특히 바람직하다. 특히, L의 연결쇄 길이는, 4 또는 5인 것이 바람직하고, 4인 것이 가장 바람직하다. 염기 발생제의 구체적인 바람직한 화합물로서는, 예를 들면, 국제 공개공보 제2020/066416호의 단락 번호 0102~0168에 기재된 화합물, 국제 공개공보 제2018/038002호의 단락 번호 0143~0177에 기재된 화합물도 들 수 있다.It is preferable that the number of carbon atoms in L in the formula (B3) (including carbon atoms other than carbon atoms in the link chain) is 3 to 24. The upper limit is more preferably 12 or less, further preferably 10 or less, and particularly preferably 8 or less. As for a lower limit, it is more preferable that it is 4 or more. From the viewpoint of rapidly advancing the intramolecular cyclization reaction, the upper limit of the link chain length of L is preferably 12 or less, more preferably 8 or less, still more preferably 6 or less, and particularly preferably 5 or less. In particular, the length of the linked chain of L is preferably 4 or 5, and most preferably 4. As a specific preferable compound of a base generator, the compound of Paragraph No. 0102 - 0168 of International Publication No. 2020/066416, and the compound of Paragraph No. 0143 - 0177 of International Publication No. 2018/038002 are also mentioned, for example. .
또, 염기 발생제는 하기 식 (N1)로 나타나는 화합물을 포함하는 것도 바람직하다.Moreover, it is also preferable that the base generator contains a compound represented by the following formula (N1).
[화학식 42][Formula 42]
식 (N1) 중, RN1 및 RN2는 각각 독립적으로 1가의 유기기를 나타내고, RC1은 수소 원자 또는 보호기를 나타내며, L은 2가의 연결기를 나타낸다.In formula (N1), R N1 and R N2 each independently represent a monovalent organic group, R C1 represents a hydrogen atom or a protecting group, and L represents a divalent linking group.
L은 2가의 연결기이며, 2가의 유기기인 것이 바람직하다. 연결기의 연결쇄 길이는 1 이상인 것이 바람직하고, 2 이상인 것이 보다 바람직하다. 상한으로서는, 12 이하인 것이 바람직하고, 8 이하인 것이 보다 바람직하며, 5 이하인 것이 더 바람직하다. 연결쇄 길이란, 식 중의 2개의 카보닐기의 사이에 있어서 최단의 도정(道程)이 되는 원자 배열에 존재하는 원자의 수이다.L is a divalent linking group, preferably a divalent organic group. It is preferable that it is 1 or more, and, as for the length of the linked chain of a linking group, it is more preferable that it is 2 or more. As an upper limit, it is preferably 12 or less, more preferably 8 or less, and still more preferably 5 or less. Linked chain length is the number of atoms present in the atomic arrangement that forms the shortest path between two carbonyl groups in the formula.
식 (N1) 중, RN1 및 RN2는 각각 독립적으로 1가의 유기기(탄소수 1~24가 바람직하고, 2~18이 보다 바람직하며, 3~12가 더 바람직하다)를 나타내며, 탄화 수소기(탄소수 1~24가 바람직하고, 1~12가 보다 바람직하며, 1~10이 더 바람직하다)인 것이 바람직하고, 구체적으로는, 지방족 탄화 수소기(탄소수 1~24가 바람직하고, 1~12가 보다 바람직하며, 1~10이 더 바람직하다) 또는 방향족 탄화 수소기(탄소수 6~22가 바람직하고, 6~18이 보다 바람직하며, 6~10이 더 바람직하다)를 들 수 있으며, 지방족 탄화 수소기가 바람직하다. RN1 및 RN2로서, 지방족 탄화 수소기를 이용하면, 발생하는 염기의 염기성이 높아 바람직하다. 또한, 지방족 탄화 수소기 및 방향족 탄화 수소기는, 치환기를 갖고 있어도 되고, 또, 지방족 탄화 수소기 및 방향족 탄화 수소기가 지방족 탄화 수소쇄 중이나 방향환 중, 치환기 중에 산소 원자를 갖고 있어도 된다. 특히, 지방족 탄화 수소기가 탄화 수소쇄 중에 산소 원자를 갖고 있는 양태가 예시된다.In formula (N1), R N1 and R N2 each independently represent a monovalent organic group (preferably 1 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, still more preferably 3 to 12 carbon atoms), and a hydrocarbon group. (C1-24 is preferable, 1-12 are more preferable, and 1-10 are more preferable), and specifically, an aliphatic hydrocarbon group (C1-24 is preferable, 1-12 is more preferable, more preferably 1 to 10) or an aromatic hydrocarbon group (preferably 6 to 22 carbon atoms, more preferably 6 to 18, more preferably 6 to 10), and aliphatic carbonization Hydrogen groups are preferred. As R N1 and R N2 , it is preferable to use an aliphatic hydrocarbon group because the basicity of the generated base is high. In addition, the aliphatic hydrocarbon group and the aromatic hydrocarbon group may have a substituent, and the aliphatic hydrocarbon group and the aromatic hydrocarbon group may have an oxygen atom in the aliphatic hydrocarbon chain or in the aromatic ring or in the substituent. In particular, an aspect in which an aliphatic hydrocarbon group has an oxygen atom in a hydrocarbon chain is exemplified.
RN1 및 RN2를 구성하는 지방족 탄화 수소기로서는, 직쇄 또는 분기의 쇄상 알킬기, 환상 알킬기, 쇄상 알킬기와 환상 알킬기의 조합에 관한 기, 산소 원자를 쇄 중에 갖는 알킬기를 들 수 있다. 직쇄 또는 분기의 쇄상 알킬기는, 탄소수 1~24인 것이 바람직하고, 2~18이 보다 바람직하며, 3~12가 더 바람직하다. 직쇄 또는 분기의 쇄상 알킬기는, 예를 들면, 메틸기, 에틸기, 프로필기, 뷰틸기, 펜틸기, 헥실기, 헵틸기, 옥틸기, 노닐기, 데실기, 운데실기, 도데실기, 아이소프로필기, 아이소뷰틸기, 세컨더리 뷰틸기, 터셔리 뷰틸기, 아이소펜틸기, 네오펜틸기, 터셔리 펜틸기, 아이소헥실기 등을 들 수 있다.Examples of the aliphatic hydrocarbon group constituting R N1 and R N2 include a straight-chain or branched chain alkyl group, a cyclic alkyl group, a group related to a combination of a chain alkyl group and a cyclic alkyl group, and an alkyl group having an oxygen atom in the chain. The straight-chain or branched chain alkyl group preferably has 1 to 24 carbon atoms, more preferably 2 to 18, and still more preferably 3 to 12. The straight chain or branched chain alkyl group is, for example, a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, an undecyl group, a dodecyl group, an isopropyl group, Isobutyl group, secondary butyl group, tertiary butyl group, isopentyl group, neopentyl group, tertiary pentyl group, isohexyl group, etc. are mentioned.
환상 알킬기는, 탄소수 3~12인 것이 바람직하고, 3~6이 보다 바람직하다. 환상 알킬기는, 예를 들면, 사이클로프로필기, 사이클로뷰틸기, 사이클로펜틸기, 사이클로헥실기, 사이클로옥틸기 등을 들 수 있다.The cyclic alkyl group preferably has 3 to 12 carbon atoms, more preferably 3 to 6 carbon atoms. Examples of the cyclic alkyl group include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group.
쇄상 알킬기와 환상 알킬기의 조합에 관한 기는, 탄소수 4~24인 것이 바람직하고, 4~18이 보다 바람직하며, 4~12가 더 바람직하다. 쇄상 알킬기와 환상 알킬기의 조합에 관한 기는, 예를 들면, 사이클로헥실메틸기, 사이클로헥실에틸기, 사이클로헥실프로필기, 메틸사이클로헥실메틸기, 에틸사이클로헥실에틸기 등을 들 수 있다.The group relating to the combination of a chain alkyl group and a cyclic alkyl group preferably has 4 to 24 carbon atoms, more preferably 4 to 18 carbon atoms, still more preferably 4 to 12 carbon atoms. Examples of the group related to the combination of a chain alkyl group and a cyclic alkyl group include a cyclohexylmethyl group, a cyclohexylethyl group, a cyclohexylpropyl group, a methylcyclohexylmethyl group, and an ethylcyclohexylethyl group.
산소 원자를 쇄 중에 갖는 알킬기는, 탄소수 2~12인 것이 바람직하고, 2~6이 보다 바람직하며, 2~4가 더 바람직하다. 산소 원자를 쇄 중에 갖는 알킬기는, 쇄상이어도 되고 환상이어도 되며, 직쇄여도 되고 분기여도 된다.The alkyl group having an oxygen atom in the chain preferably has 2 to 12 carbon atoms, more preferably 2 to 6, still more preferably 2 to 4. The alkyl group having an oxygen atom in its chain may be chain or cyclic, or may be straight or branched.
그중에서도, 후술하는 분해 생성 염기의 비점을 높이는 관점에서, RN1 및 RN2는 탄소수 5~12의 알킬기가 바람직하다. 단, 금속(예를 들면 구리)의 층과 적층할 때의 밀착성을 중시하는 처방에 있어서는, 환상의 알킬기를 갖는 기나 탄소수 1~8의 알킬기인 것이 바람직하다.Among them, from the viewpoint of increasing the boiling point of the decomposition product base described later, R N1 and R N2 are preferably alkyl groups having 5 to 12 carbon atoms. However, in formulations that place importance on adhesion when stacking with a layer of metal (for example, copper), a group having a cyclic alkyl group or an alkyl group having 1 to 8 carbon atoms is preferable.
RN1 및 RN2는 서로 연결되어 환상 구조를 형성하고 있어도 된다. 환상 구조를 형성함에 있어서는, 산소 원자 등을 쇄 중에 갖고 있어도 된다. 또, RN1 및 RN2가 형성하는 환상 구조는, 단환이어도 되고, 축합환이어도 되지만, 단환이 바람직하다. 형성되는 환상 구조로서는, 식 (N1) 중의 질소 원자를 함유하는 5원환 또는 6원환이 바람직하고, 예를 들면, 피롤환, 이미다졸환, 피라졸환, 피롤린환, 피롤리딘환, 이미다졸리딘환, 피라졸리딘환, 피페리딘환, 피페라진환, 모폴린환 등을 들 수 있으며, 피롤린환, 피롤리딘환, 피페리딘환, 피페라진환, 모폴린환을 바람직하게 들 수 있다.R N1 and R N2 may be connected to each other to form a cyclic structure. In forming a cyclic structure, you may have an oxygen atom etc. in a chain|strand. Further, the cyclic structure formed by R N1 and R N2 may be a monocyclic or condensed ring, but a monocyclic structure is preferable. As the cyclic structure formed, a 5- or 6-membered ring containing a nitrogen atom in formula (N1) is preferable, and examples thereof include a pyrrole ring, an imidazole ring, a pyrazole ring, a pyrroline ring, a pyrrolidine ring, and an imidazolidine ring. , A pyrazolidine ring, a piperidine ring, a piperazine ring, a morpholine ring, etc. are mentioned, A pyrroline ring, a pyrrolidine ring, a piperidine ring, a piperazine ring, and a morpholine ring are mentioned preferably.
RC1은 수소 원자 또는 보호기를 나타내고, 수소 원자가 바람직하다.R C1 represents a hydrogen atom or a protecting group, and a hydrogen atom is preferable.
보호기로서는, 산 또는 염기의 작용에 의하여 분해되는 보호기가 바람직하고, 산으로 분해되는 보호기를 바람직하게 들 수 있다.As the protecting group, a protecting group decomposed by the action of an acid or a base is preferable, and a protecting group decomposed by an acid is preferably used.
보호기의 구체예로서는, 쇄상 혹은 환상의 알킬기 또는 쇄 중에 산소 원자를 갖는 쇄상 혹은 환상의 알킬기를 들 수 있다. 쇄상 혹은 환상의 알킬기로서는, 메틸기, 에틸기, 아이소프로필기, tert-뷰틸기, 사이클로헥실기 등을 들 수 있다. 쇄 중에 산소 원자를 갖는 쇄상의 알킬기로서는, 구체적으로는 알킬옥시알킬기를 들 수 있으며, 더 구체적으로는, 메틸옥시메틸(MOM)기, 에틸옥시에틸(EE)기 등을 들 수 있다. 쇄 중에 산소 원자를 갖는 환상의 알킬기로서는, 에폭시기, 글리시딜기, 옥세탄일기, 테트라하이드로퓨란일기, 테트라하이드로피란일(THP)기 등을 들 수 있다.Specific examples of the protecting group include a chain or cyclic alkyl group or a chain or cyclic alkyl group having an oxygen atom in the chain. As a chain or cyclic alkyl group, a methyl group, an ethyl group, an isopropyl group, a tert-butyl group, a cyclohexyl group, etc. are mentioned. Examples of the chain-like alkyl group having an oxygen atom in the chain include, specifically, an alkyloxyalkyl group, and more specifically, a methyloxymethyl (MOM) group and an ethyloxyethyl (EE) group. Examples of the cyclic alkyl group having an oxygen atom in the chain include an epoxy group, a glycidyl group, an oxetanyl group, a tetrahydrofuranyl group, and a tetrahydropyranyl (THP) group.
L을 구성하는 2가의 연결기로서는, 특별히 정하는 것은 아니지만, 탄화 수소기가 바람직하고, 지방족 탄화 수소기가 보다 바람직하다. 탄화 수소기는, 치환기를 갖고 있어도 되고, 또, 탄화 수소쇄 중에 탄소 원자 이외의 종류의 원자를 갖고 있어도 된다. 보다 구체적으로는, 쇄 중에 산소 원자를 갖고 있어도 되는 2가의 탄화 수소 연결기인 것이 바람직하고, 쇄 중에 산소 원자를 갖고 있어도 되는 2가의 지방족 탄화 수소기, 2가의 방향족 탄화 수소기, 또는 쇄 중에 산소 원자를 갖고 있어도 되는 2가의 지방족 탄화 수소기와 2가의 방향족 탄화 수소기의 조합에 관한 기가 보다 바람직하며, 쇄 중에 산소 원자를 갖고 있어도 되는 2가의 지방족 탄화 수소기가 더 바람직하다. 이들 기는, 산소 원자를 갖고 있지 않는 편이 바람직하다.The divalent linking group constituting L is not particularly defined, but is preferably a hydrocarbon group and more preferably an aliphatic hydrocarbon group. The hydrocarbon group may have a substituent, and may have an atom of a type other than a carbon atom in the hydrocarbon chain. More specifically, it is preferably a divalent hydrocarbon linking group which may have an oxygen atom in the chain, a divalent aliphatic hydrocarbon group which may have an oxygen atom in the chain, a divalent aromatic hydrocarbon group, or an oxygen atom in the chain A group related to a combination of a divalent aliphatic hydrocarbon group that may have a divalent aromatic hydrocarbon group is more preferable, and a divalent aliphatic hydrocarbon group that may have an oxygen atom in the chain is more preferable. It is preferable that these groups do not have an oxygen atom.
2가의 탄화 수소 연결기는, 탄소수 1~24인 것이 바람직하고, 2~12가 보다 바람직하며, 2~6이 더 바람직하다. 2가의 지방족 탄화 수소기는, 탄소수 1~12인 것이 바람직하고, 2~6이 보다 바람직하며, 2~4가 더 바람직하다. 2가의 방향족 탄화 수소기는, 탄소수 6~22인 것이 바람직하고, 6~18이 보다 바람직하며, 6~10이 더 바람직하다. 2가의 지방족 탄화 수소기와 2가의 방향족 탄화 수소기의 조합에 관한 기(예를 들면, 아릴렌알킬기)는, 탄소수 7~22인 것이 바람직하고, 7~18이 보다 바람직하며, 7~10이 더 바람직하다.The divalent hydrocarbon linking group preferably has 1 to 24 carbon atoms, more preferably 2 to 12, still more preferably 2 to 6. The divalent aliphatic hydrocarbon group preferably has 1 to 12 carbon atoms, more preferably 2 to 6, still more preferably 2 to 4. The divalent aromatic hydrocarbon group preferably has 6 to 22 carbon atoms, more preferably 6 to 18, still more preferably 6 to 10. The group related to the combination of a divalent aliphatic hydrocarbon group and a divalent aromatic hydrocarbon group (for example, an arylene alkyl group) preferably has 7 to 22 carbon atoms, more preferably 7 to 18, and more preferably 7 to 10 desirable.
연결기 L로서는, 구체적으로, 직쇄 또는 분기의 쇄상 알킬렌기, 환상 알킬렌기, 쇄상 알킬렌기와 환상 알킬렌기의 조합에 관한 기, 산소 원자를 쇄 중에 갖고 있는 알킬렌기, 직쇄 또는 분기의 쇄상의 알켄일렌기, 환상의 알켄일렌기, 아릴렌기, 아릴렌알킬렌기가 바람직하다.As the linking group L, specifically, a straight chain or branched chain alkylene group, a cyclic alkylene group, a group related to a combination of a chain alkylene group and a cyclic alkylene group, an alkylene group having an oxygen atom in the chain, a linear or branched chain alkenyl A rene group, a cyclic alkenylene group, an arylene group, and an arylene alkylene group are preferable.
직쇄 또는 분기의 쇄상 알킬렌기는, 탄소수 1~12인 것이 바람직하고, 2~6이 보다 바람직하며, 2~4가 더 바람직하다.The linear or branched chain alkylene group preferably has 1 to 12 carbon atoms, more preferably 2 to 6, and even more preferably 2 to 4.
환상 알킬렌기는, 탄소수 3~12인 것이 바람직하고, 3~6이 보다 바람직하다.The cyclic alkylene group preferably has 3 to 12 carbon atoms, more preferably 3 to 6 carbon atoms.
쇄상 알킬렌기와 환상 알킬렌기의 조합에 관한 기는, 탄소수 4~24인 것이 바람직하고, 4~12가 보다 바람직하며, 4~6이 더 바람직하다.The group relating to the combination of a chain alkylene group and a cyclic alkylene group preferably has 4 to 24 carbon atoms, more preferably 4 to 12, still more preferably 4 to 6.
산소 원자를 쇄 중에 갖는 알킬렌기는, 쇄상이어도 되고 환상이어도 되며, 직쇄여도 되고 분기여도 된다. 산소 원자를 쇄 중에 갖는 알킬렌기는, 탄소수 1~12인 것이 바람직하고, 1~6이 보다 바람직하며, 1~3이 더 바람직하다.The alkylene group having an oxygen atom in its chain may be chain or cyclic, and may be straight or branched. The alkylene group having an oxygen atom in the chain preferably has 1 to 12 carbon atoms, more preferably 1 to 6, and still more preferably 1 to 3.
직쇄 또는 분기의 쇄상의 알켄일렌기는, 탄소수 2~12인 것이 바람직하고, 2~6이 보다 바람직하며, 2~3이 더 바람직하다. 직쇄 또는 분기의 쇄상의 알켄일렌기는, C=C 결합의 수는 1~10인 것이 바람직하고, 1~6이 보다 바람직하며, 1~3이 더 바람직하다.The linear or branched chain alkenylene group preferably has 2 to 12 carbon atoms, more preferably 2 to 6, still more preferably 2 to 3. The number of C=C bonds in the linear or branched alkenylene group is preferably 1 to 10, more preferably 1 to 6, still more preferably 1 to 3.
환상의 알켄일렌기는, 탄소수 3~12인 것이 바람직하고, 3~6이 보다 바람직하다. 환상의 알켄일렌기는, C=C 결합의 수는 1~6이 바람직하고, 1~4가 보다 바람직하며, 1~2가 더 바람직하다.The cyclic alkenylene group preferably has 3 to 12 carbon atoms, more preferably 3 to 6 carbon atoms. The number of C=C bonds in the cyclic alkenylene group is preferably 1 to 6, more preferably 1 to 4, still more preferably 1 to 2.
아릴렌기는, 탄소수 6~22인 것이 바람직하고, 6~18이 보다 바람직하며, 6~10이 더 바람직하다.The arylene group preferably has 6 to 22 carbon atoms, more preferably 6 to 18, and still more preferably 6 to 10.
아릴렌알킬렌기는, 탄소수 7~23인 것이 바람직하고, 7~19가 보다 바람직하며, 7~11이 더 바람직하다.The arylene alkylene group preferably has 7 to 23 carbon atoms, more preferably 7 to 19, and still more preferably 7 to 11.
그중에서도, 쇄상 알킬렌기, 환상 알킬렌기, 산소 원자를 쇄 중에 갖는 알킬렌기, 쇄상의 알켄일렌기, 아릴렌기, 아릴렌알킬렌기가 바람직하고, 1,2-에틸렌기, 프로페인다이일기(특히 1,3-프로페인다이일기), 사이클로헥세인다이일기(특히 1,2-사이클로헥세인다이일기), 바이닐렌기(특히 시스바이닐렌기), 페닐렌기(1,2-페닐렌기), 페닐렌메틸렌기(특히 1,2-페닐렌메틸렌기), 에틸렌옥시에틸렌기(특히 1,2-에틸렌옥시-1,2-에틸렌기)가 보다 바람직하다.Among them, a chain alkylene group, a cyclic alkylene group, an alkylene group having an oxygen atom in the chain, a chain alkenylene group, an arylene group, and an arylene alkylene group are preferable, and a 1,2-ethylene group and a propanediyl group (especially 1 ,3-propanediyl group), cyclohexanediyl group (especially 1,2-cyclohexanediyl group), vinylene group (especially cisvinylene group), phenylene group (1,2-phenylene group), phenylene methylene A group (particularly a 1,2-phenylenemethylene group) and an ethyleneoxyethylene group (particularly a 1,2-ethyleneoxy-1,2-ethylene group) are more preferable.
염기 발생제로서는, 하기의 예를 들 수 있지만, 본 발명이 이로써 한정되어 해석되는 것은 아니다.Examples of the base generator include the following examples, but the present invention is not construed as being limited thereto.
[화학식 43][Formula 43]
비이온형 염기 발생제의 분자량은, 800 이하인 것이 바람직하고, 600 이하인 것이 보다 바람직하며, 500 이하인 것이 더 바람직하다. 하한으로서는, 100 이상인 것이 바람직하고, 200 이상인 것이 보다 바람직하며, 300 이상인 것이 더 바람직하다.The molecular weight of the nonionic base generator is preferably 800 or less, more preferably 600 or less, and still more preferably 500 or less. As a lower limit, it is preferably 100 or more, more preferably 200 or more, and still more preferably 300 or more.
이온형 염기 발생제의 구체적인 바람직한 화합물로서는, 예를 들면, 국제 공개공보 제2018/038002호의 단락 번호 0148~0163에 기재된 화합물도 들 수 있다.As a specific preferable compound of an ionic base generator, Paragraph No. 0148 of International Publication No. 2018/038002 - the compound of 0163 are also mentioned, for example.
암모늄염의 구체예로서는, 이하의 화합물을 들 수 있지만, 본 발명은 이들에 한정되는 것은 아니다.Although the following compounds are mentioned as a specific example of an ammonium salt, this invention is not limited to these.
[화학식 44][Formula 44]
이미늄염의 구체예로서는, 이하의 화합물을 들 수 있지만, 본 발명은 이들에 한정되는 것은 아니다.Although the following compounds are mentioned as a specific example of an iminium salt, this invention is not limited to these.
[화학식 45][Formula 45]
본 발명의 수지 조성물이 염기 발생제를 포함하는 경우, 염기 발생제의 함유량은, 본 발명의 수지 조성물 중의 수지 100질량부에 대하여, 0.1~50질량부가 바람직하다. 하한은, 0.3질량부 이상이 보다 바람직하며, 0.5질량부 이상이 더 바람직하다. 상한은, 30질량부 이하가 보다 바람직하며, 20질량부 이하가 더 바람직하고, 10질량부 이하가 한층 바람직하며, 5질량부 이하여도 되고, 4질량부 이하여도 된다.When the resin composition of the present invention contains a base generator, the content of the base generator is preferably 0.1 to 50 parts by mass relative to 100 parts by mass of the resin in the resin composition of the present invention. The lower limit is more preferably 0.3 parts by mass or more, and more preferably 0.5 parts by mass or more. The upper limit is more preferably 30 parts by mass or less, more preferably 20 parts by mass or less, still more preferably 10 parts by mass or less, may be 5 parts by mass or less, or may be 4 parts by mass or less.
염기 발생제는, 1종 또는 2종 이상을 이용할 수 있다. 2종 이상을 이용하는 경우는, 합계량이 상기 범위인 것이 바람직하다.1 type or 2 or more types can be used for a base generator. When using 2 or more types, it is preferable that the total amount is the said range.
<중합성 화합물><Polymerizable compound>
본 발명의 수지 조성물은, 중합성 화합물을 포함하는 것이 바람직하다.It is preferable that the resin composition of this invention contains a polymeric compound.
중합성 화합물로서는, 라디칼 가교제, 또는, 다른 가교제를 들 수 있다.As a polymeric compound, a radical crosslinking agent or another crosslinking agent is mentioned.
〔라디칼 가교제〕[Radical Crosslinking Agent]
본 발명의 수지 조성물은, 라디칼 가교제를 포함하는 것이 바람직하다.It is preferable that the resin composition of this invention contains a radical crosslinking agent.
라디칼 가교제는, 라디칼 중합성기를 갖는 화합물이다. 라디칼 중합성기로서는, 에틸렌성 불포화 결합을 포함하는 기가 바람직하다. 상기 에틸렌성 불포화 결합을 포함하는 기로서는, 바이닐기, 알릴기, 바이닐페닐기, (메트)아크릴로일기, 말레이미드기, (메트)아크릴아마이드기 등의 에틸렌성 불포화 결합을 갖는 기를 들 수 있다.A radical crosslinking agent is a compound having a radical polymerizable group. As the radical polymerizable group, a group containing an ethylenically unsaturated bond is preferable. Examples of the group containing an ethylenically unsaturated bond include groups having an ethylenically unsaturated bond such as a vinyl group, an allyl group, a vinylphenyl group, a (meth)acryloyl group, a maleimide group, and a (meth)acrylamide group.
이들 중에서도, 상기 에틸렌성 불포화 결합을 포함하는 기로서는, (메트)아크릴로일기, (메트)아크릴아마이드기, 바이닐페닐기가 바람직하고, 반응성의 관점에서는, (메트)아크릴로일기가 보다 바람직하다.Among these, as a group containing the said ethylenically unsaturated bond, a (meth)acryloyl group, a (meth)acrylamide group, and a vinylphenyl group are preferable, and a (meth)acryloyl group is more preferable from a reactive viewpoint.
라디칼 가교제는, 에틸렌성 불포화 결합을 1개 이상 갖는 화합물인 것이 바람직하지만, 2개 이상 갖는 화합물인 것이 보다 바람직하다. 라디칼 가교제는, 에틸렌성 불포화 결합을 3개 이상 갖고 있어도 된다.It is preferable that it is a compound which has one or more ethylenically unsaturated bonds, but, as for a radical crosslinking agent, it is more preferable that it is a compound which has two or more. The radical crosslinking agent may have three or more ethylenically unsaturated bonds.
상기 에틸렌성 불포화 결합을 2개 이상 갖는 화합물로서는, 에틸렌성 불포화 결합을 2~15개 갖는 화합물이 바람직하고, 에틸렌성 불포화 결합을 2~10개 갖는 화합물이 보다 바람직하며, 2~6개 갖는 화합물이 더 바람직하다.As the compound having two or more ethylenically unsaturated bonds, compounds having 2 to 15 ethylenically unsaturated bonds are preferable, compounds having 2 to 10 ethylenically unsaturated bonds are more preferable, and compounds having 2 to 6 this is more preferable
또, 얻어지는 패턴(경화물)의 막강도의 관점에서는, 본 발명의 수지 조성물은, 에틸렌성 불포화 결합을 2개 갖는 화합물과, 상기 에틸렌성 불포화 결합을 3개 이상 갖는 화합물을 포함하는 것도 바람직하다.Further, from the viewpoint of the film strength of the obtained pattern (cured product), the resin composition of the present invention preferably contains a compound having two ethylenically unsaturated bonds and a compound having three or more ethylenically unsaturated bonds. .
라디칼 가교제의 분자량은, 2,000 이하가 바람직하고, 1,500 이하가 보다 바람직하며, 900 이하가 더 바람직하다. 라디칼 가교제의 분자량의 하한은, 100 이상이 바람직하다.The molecular weight of the radical crosslinking agent is preferably 2,000 or less, more preferably 1,500 or less, and still more preferably 900 or less. As for the lower limit of the molecular weight of a radical crosslinking agent, 100 or more are preferable.
라디칼 가교제의 구체예로서는, 불포화 카복실산(예를 들면, 아크릴산, 메타크릴산, 이타콘산, 크로톤산, 아이소크로톤산, 말레산 등)이나 그 에스터류, 아마이드류를 들 수 있으며, 바람직하게는, 불포화 카복실산과 다가 알코올 화합물의 에스터, 및 불포화 카복실산과 다가 아민 화합물의 아마이드류이다. 또, 하이드록시기나 아미노기, 설판일기 등의 구핵성 치환기를 갖는 불포화 카복실산 에스터 또는 아마이드류와, 단관능 혹은 다관능 아이소사이아네이트류 또는 에폭시류의 부가 반응물이나, 단관능 혹은 다관능의 카복실산의 탈수 축합 반응물 등도 적합하게 사용된다. 또, 아이소사이아네이트기나 에폭시기 등의 친전자성 치환기를 갖는 불포화 카복실산 에스터 또는 아마이드류와, 단관능 혹은 다관능의 알코올류, 아민류, 싸이올류의 부가 반응물, 또한, 할로제노기나 토실옥시기 등의 탈리성 치환기를 갖는 불포화 카복실산 에스터 또는 아마이드류와, 단관능 혹은 다관능의 알코올류, 아민류, 싸이올류의 치환 반응물도 적합하다. 또, 다른 예로서, 상기의 불포화 카복실산 대신에, 불포화 포스폰산, 스타이렌 등의 바이닐벤젠 유도체, 바이닐에터, 알릴에터 등으로 치환한 화합물군을 사용하는 것도 가능하다. 구체예로서는, 일본 공개특허공보 2016-027357호의 단락 0113~0122의 기재를 참조할 수 있으며, 이들 내용은 본 명세서에 원용된다.Specific examples of the radical crosslinking agent include unsaturated carboxylic acids (eg, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.) and esters and amides thereof, preferably unsaturated These are esters of carboxylic acids and polyhydric alcohol compounds, and amides of unsaturated carboxylic acids and polyhydric amine compounds. In addition, an addition reaction product of an unsaturated carboxylic acid ester or amide having a nucleophilic substituent such as a hydroxyl group, an amino group, or a sulfanyl group with monofunctional or polyfunctional isocyanates or epoxies, or a monofunctional or polyfunctional carboxylic acid Dehydration condensation reactants and the like are also suitably used. In addition, an addition reaction product of an unsaturated carboxylic acid ester or amide having an electrophilic substituent such as an isocyanate group or an epoxy group with monofunctional or polyfunctional alcohols, amines, or thiols, furthermore, a halo xeno group, a tosyloxy group, etc. Also suitable are substitution reactants of unsaturated carboxylic acid esters or amides having a leaving substituent with monofunctional or polyfunctional alcohols, amines, or thiols. As another example, it is also possible to use a group of compounds substituted with unsaturated phosphonic acids, vinylbenzene derivatives such as styrene, vinyl ethers, allyl ethers and the like instead of the above unsaturated carboxylic acids. As a specific example, Paragraph 0113 of Unexamined-Japanese-Patent No. 2016-027357 - description of 0122 can be considered into consideration, and these content is integrated in this specification.
또, 라디칼 가교제는, 상압하에서 100℃ 이상의 비점을 갖는 화합물도 바람직하다. 그 예로서는, 폴리에틸렌글라이콜다이(메트)아크릴레이트, 트라이메틸올에테인트라이(메트)아크릴레이트, 네오펜틸글라이콜다이(메트)아크릴레이트, 펜타에리트리톨트라이(메트)아크릴레이트, 펜타에리트리톨테트라(메트)아크릴레이트, 다이펜타에리트리톨펜타(메트)아크릴레이트, 다이펜타에리트리톨헥사(메트)아크릴레이트, 헥세인다이올다이(메트)아크릴레이트, 트라이메틸올프로페인트라이(아크릴로일옥시프로필)에터, 트라이(아크릴로일옥시에틸)아이소사이아누레이트, 글리세린이나 트라이메틸올에테인 등의 다관능 알코올에 에틸렌옥사이드나 프로필렌옥사이드를 부가시킨 후, (메트)아크릴레이트화한 화합물, 일본 공고특허공보 소48-041708호, 일본 공고특허공보 소50-006034호, 일본 공개특허공보 소51-037193호 각 공보에 기재되어 있는 바와 같은 유레테인(메트)아크릴레이트류, 일본 공개특허공보 소48-064183호, 일본 공고특허공보 소49-043191호, 일본 공고특허공보 소52-030490호 각 공보에 기재되어 있는 폴리에스터아크릴레이트류, 에폭시 수지와 (메트)아크릴산의 반응 생성물인 에폭시아크릴레이트류 등의 다관능의 아크릴레이트나 메타크릴레이트 및 이들의 혼합물을 들 수 있다. 또, 일본 공개특허공보 2008-292970호의 단락 0254~0257에 기재된 화합물도 적합하다. 또, 다관능 카복실산에 글리시딜(메트)아크릴레이트 등의 환상 에터기와 에틸렌성 불포화 결합을 갖는 화합물을 반응시켜 얻어지는 다관능 (메트)아크릴레이트 등도 들 수 있다.Moreover, the radical crosslinking agent is also preferably a compound having a boiling point of 100°C or higher under normal pressure. Examples thereof include polyethylene glycol di(meth)acrylate, trimethylolethane tri(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol tri(meth)acrylate, and pentaerythritol. Tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, hexanedioldi(meth)acrylate, trimethylolpropane tri(acryloyl Compound obtained by adding ethylene oxide or propylene oxide to polyfunctional alcohols such as oxypropyl)ether, tri(acryloyloxyethyl)isocyanurate, glycerin or trimethylolethane, and then (meth)acrylated compounds, Japan Urethane (meth)acrylates as described in Japanese Patent Publication No. 48-041708, Japanese Patent Publication No. 50-006034, and Japanese Unexamined Patent Publication No. 51-037193, Japanese Unexamined Patent Publication Polyester acrylates described in Japanese Patent Publication No. 48-064183, Japanese Patent Publication No. 49-043191, and Japanese Patent Publication No. 52-030490, epoxy acrylic which is a reaction product of epoxy resin and (meth)acrylic acid Polyfunctional acrylates and methacrylates, such as lates, and mixtures thereof are exemplified. Moreover, Paragraph 0254 of Unexamined-Japanese-Patent No. 2008-292970 - the compound of 0257 are also suitable. Moreover, the polyfunctional (meth)acrylate obtained by making the compound which has a cyclic ether group, such as glycidyl (meth)acrylate, and an ethylenically unsaturated bond react with polyfunctional carboxylic acid, etc. are mentioned.
또, 상술 이외의 바람직한 라디칼 가교제로서, 일본 공개특허공보 2010-160418호, 일본 공개특허공보 2010-129825호, 일본 특허공보 제4364216호 등에 기재되는, 플루오렌환을 가지며, 에틸렌성 불포화 결합을 갖는 기를 2개 이상 갖는 화합물이나, 카도 수지도 사용하는 것이 가능하다.In addition, as preferred radical crosslinking agents other than those described above, those described in Japanese Unexamined Patent Publication No. 2010-160418, Japanese Unexamined Patent Publication No. 2010-129825, Japanese Patent Publication No. 4364216, etc., have a fluorene ring and have an ethylenically unsaturated bond. It is also possible to use compounds having two or more groups and cardo resin.
또한, 그 외의 예로서는, 일본 공고특허공보 소46-043946호, 일본 공고특허공보 평01-040337호, 일본 공고특허공보 평01-040336호에 기재된 특정 불포화 화합물이나, 일본 공개특허공보 평02-025493호에 기재된 바이닐포스폰산계 화합물 등도 들 수 있다. 또, 일본 공개특허공보 소61-022048호에 기재된 퍼플루오로알킬기를 포함하는 화합물을 이용할 수도 있다. 또한 일본 접착 협회지 vol. 20, No. 7, 300~308페이지(1984년)에 광중합성 모노머 및 올리고머로서 소개되어 있는 것도 사용할 수 있다.In addition, as other examples, the specific unsaturated compounds described in Japanese Patent Publication No. 46-043946, Japanese Patent Publication No. Hei 01-040337, and Japanese Patent Publication Hei 01-040336, and Japanese Unexamined Patent Publication Hei 02-025493 and the vinylphosphonic acid-based compounds described in No. Moreover, the compound containing the perfluoroalkyl group of Unexamined-Japanese-Patent No. 61-022048 can also be used. Also, Journal of the Japan Adhesion Association vol. 20, no. Those introduced as photopolymerizable monomers and oligomers on pages 7, 300 to 308 (1984) can also be used.
상기 외에, 일본 공개특허공보 2015-034964호의 단락 0048~0051에 기재된 화합물, 국제 공개공보 제2015/199219호의 단락 0087~0131에 기재된 화합물도 바람직하게 이용할 수 있으며, 이들 내용은 본 명세서에 원용된다.In addition to the above, the compound of Paragraph 0048 of Unexamined-Japanese-Patent No. 2015-034964 - 0051, and the compound of Paragraph 0087 of International Publication No. 2015/199219 - 0131 can also be used preferably, These content is integrated in this specification.
또, 일본 공개특허공보 평10-062986호에 있어서 식 (1) 및 식 (2)로서 그 구체예와 함께 기재된, 다관능 알코올에 에틸렌옥사이드나 프로필렌옥사이드를 부가시킨 후에 (메트)아크릴레이트화한 화합물도, 라디칼 가교제로서 이용할 수 있다.In addition, after adding ethylene oxide or propylene oxide to the polyfunctional alcohol described with specific examples as formula (1) and formula (2) in Japanese Unexamined Patent Publication No. 10-062986, (meth)acrylated A compound can also be used as a radical crosslinking agent.
또한, 일본 공개특허공보 2015-187211호의 단락 0104~0131에 기재된 화합물도 라디칼 가교제로서 이용할 수 있으며, 이들 내용은 본 명세서에 원용된다.In addition, Paragraph 0104 of Unexamined-Japanese-Patent No. 2015-187211 - the compound of 0131 can also be used as a radical crosslinking agent, These content is integrated in this specification.
라디칼 가교제로서는, 다이펜타에리트리톨트라이아크릴레이트(시판품으로서는 KAYARAD D-330; 닛폰 가야쿠(주)제), 다이펜타에리트리톨테트라아크릴레이트(시판품으로서는 KAYARAD D-320; 닛폰 가야쿠(주)제, A-TMMT: 신나카무라 가가쿠 고교(주)제), 다이펜타에리트리톨펜타(메트)아크릴레이트(시판품으로서는 KAYARAD D-310; 닛폰 가야쿠(주)제), 다이펜타에리트리톨헥사(메트)아크릴레이트(시판품으로서는 KAYARAD DPHA; 닛폰 가야쿠(주)제, A-DPH; 신나카무라 가가쿠 고교사제), 및 이들의 (메트)아크릴로일기가 에틸렌글라이콜 잔기 또는 프로필렌글라이콜 잔기를 개재하여 결합되어 있는 구조가 바람직하다. 이들의 올리고머 타입도 사용할 수 있다.As a radical crosslinking agent, dipentaerythritol triacrylate (as a commercial item, KAYARAD D-330; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol tetraacrylate (as a commercial item, KAYARAD D-320; manufactured by Nippon Kayaku Co., Ltd.) , A-TMMT: Shin Nakamura Chemical Industry Co., Ltd. product), dipentaerythritol penta(meth)acrylate (as a commercial product, KAYARAD D-310; Nippon Kayaku Co., Ltd. product), dipentaerythritol hexa (meth) ) Acrylates (commercially available, KAYARAD DPHA; manufactured by Nippon Kayaku Co., Ltd., A-DPH; manufactured by Shin Nakamura Chemical Industry Co., Ltd.), and their (meth)acryloyl groups are ethylene glycol residues or propylene glycol residues A structure bonded via is preferable. These oligomeric types can also be used.
라디칼 가교제의 시판품으로서는, 예를 들면 사토머사제의 에틸렌옥시쇄를 4개 갖는 4관능 아크릴레이트인 SR-494, 에틸렌옥시쇄를 4개 갖는 2관능 메타크릴레이트인 사토머사제의 SR-209, 231, 239, 닛폰 가야쿠(주)제의 펜틸렌옥시쇄를 6개 갖는 6관능 아크릴레이트인 DPCA-60, 아이소뷰틸렌옥시쇄를 3개 갖는 3관능 아크릴레이트인 TPA-330, 유레테인 올리고머 UAS-10, UAB-140(닛폰 세이시사제), NK 에스터 M-40G, NK 에스터 4G, NK 에스터 M-9300, NK 에스터 A-9300, UA-7200(신나카무라 가가쿠 고교사제), DPHA-40H(닛폰 가야쿠(주)제), UA-306H, UA-306T, UA-306I, AH-600, T-600, AI-600(교에이샤 가가쿠사제), 블렘머 PME400(니치유(주)제) 등을 들 수 있다.As a commercially available product of the radical crosslinking agent, for example, SR-494, which is a tetrafunctional acrylate having four ethyleneoxy chains, manufactured by Sartomer, and SR-209, manufactured by Sartomer, which is a bifunctional methacrylate having four ethyleneoxy chains, 231, 239, DPCA-60, a 6-functional acrylate having 6 pentyleneoxy chains manufactured by Nippon Kayaku Co., Ltd., TPA-330, a trifunctional acrylate having 3 isobutyleneoxy chains, urethane Oligomer UAS-10, UAB-140 (manufactured by Nippon Seishi Co., Ltd.), NK ester M-40G, NK ester 4G, NK ester M-9300, NK ester A-9300, UA-7200 (manufactured by Shin Nakamura Kagaku Kogyo), DPHA- 40H (Nippon Kayaku Co., Ltd.), UA-306H, UA-306T, UA-306I, AH-600, T-600, AI-600 (Kyoeisha Chemical Co., Ltd.), Blemmer PME400 (Nichiyu ( Note) and the like.
라디칼 가교제로서는, 일본 공고특허공보 소48-041708호, 일본 공개특허공보 소51-037193호, 일본 공고특허공보 평02-032293호, 일본 공고특허공보 평02-016765호에 기재되어 있는 바와 같은 유레테인아크릴레이트류나, 일본 공고특허공보 소58-049860호, 일본 공고특허공보 소56-017654호, 일본 공고특허공보 소62-039417호, 일본 공고특허공보 소62-039418호에 기재된 에틸렌옥사이드계 골격을 갖는 유레테인 화합물류도 적합하다. 또한, 라디칼 가교제로서, 일본 공개특허공보 소63-277653호, 일본 공개특허공보 소63-260909호, 일본 공개특허공보 평01-105238호에 기재되는, 분자 내에 아미노 구조나 설파이드 구조를 갖는 화합물을 이용할 수도 있다.Examples of the radical crosslinking agent include those described in Japanese Patent Publication No. 48-041708, Japanese Patent Application Publication No. 51-037193, Japanese Patent Publication No. Hei 02-032293, and Japanese Patent Publication No. Hei 02-016765. Retane acrylates, ethylene oxide systems described in Japanese Publication No. 58-049860, Japanese Publication No. 56-017654, Japanese Publication No. 62-039417, Japanese Publication No. 62-039418 Urethane compounds having a skeleton are also suitable. In addition, as a radical crosslinking agent, compounds having an amino structure or a sulfide structure in the molecule described in Japanese Unexamined Patent Publication No. 63-277653, Japanese Unexamined Patent Publication No. 63-260909, and Japanese Unexamined Patent Publication No. Hei 01-105238 can be used. can also be used
라디칼 가교제는, 카복시기, 인산기 등의 산기를 갖는 라디칼 가교제여도 된다. 산기를 갖는 라디칼 가교제는, 지방족 폴리하이드록시 화합물과 불포화 카복실산의 에스터가 바람직하고, 지방족 폴리하이드록시 화합물의 미반응의 하이드록시기에 비방향족 카복실산 무수물을 반응시켜 산기를 갖게 한 라디칼 가교제가 보다 바람직하다. 특히 바람직하게는, 지방족 폴리하이드록시 화합물의 미반응의 하이드록시기에 비방향족 카복실산 무수물을 반응시켜 산기를 갖게 한 라디칼 가교제에 있어서, 지방족 폴리하이드록시 화합물이 펜타에리트리톨 또는 다이펜타에리트리톨인 화합물이다. 시판품으로서는, 예를 들면, 도아 고세이(주)제의 다염기산 변성 아크릴 올리고머로서, M-510, M-520 등을 들 수 있다.The radical crosslinking agent may be a radical crosslinking agent having an acid group such as a carboxy group or a phosphoric acid group. The radical crosslinking agent having an acid group is preferably an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid, and more preferably a radical crosslinking agent obtained by reacting an unreacted hydroxy group of an aliphatic polyhydroxy compound with a non-aromatic carboxylic acid anhydride to have an acid group do. Particularly preferably, in a radical crosslinking agent obtained by reacting a non-aromatic carboxylic acid anhydride with an unreacted hydroxy group of an aliphatic polyhydroxy compound to have an acid group, the aliphatic polyhydroxy compound is pentaerythritol or dipentaerythritol. am. As a commercial item, M-510, M-520 etc. are mentioned, for example as a Toagosei Co., Ltd. product polybasic acid modified acrylic oligomer.
산기를 갖는 라디칼 가교제의 바람직한 산가는, 0.1~300mgKOH/g이고, 특히 바람직하게는 1~100mgKOH/g이다. 라디칼 가교제의 산가가 상기 범위이면, 제조상의 취급성이 우수하고, 나아가서는, 현상성이 우수하다. 또, 중합성이 양호하다. 상기 산가는, JIS K 0070:1992의 기재에 준거하여 측정된다.The acid value of the radical crosslinking agent having an acid group is preferably 0.1 to 300 mgKOH/g, particularly preferably 1 to 100 mgKOH/g. When the acid value of the radical crosslinking agent is in the above range, the handleability in production is excellent, and furthermore, the developability is excellent. Moreover, polymerizability is good. The said acid value is measured based on description of JISK0070:1992.
수지 조성물은, 패턴의 해상성과 막의 신축성의 관점에서, 2관능의 메타크릴레이트 또는 아크릴레이트를 이용하는 것이 바람직하다.For the resin composition, it is preferable to use a bifunctional methacrylate or acrylate from the viewpoint of pattern resolution and film stretchability.
구체적인 화합물로서는, 트라이에틸렌글라이콜다이아크릴레이트, 트라이에틸렌글라이콜다이메타크릴레이트, 테트라에틸렌글라이콜다이메타크릴레이트, 테트라에틸렌글라이콜다이아크릴레이트, PEG(폴리에틸렌글라이콜)200 다이아크릴레이트, PEG200 다이메타크릴레이트, PEG600 다이아크릴레이트, PEG600 다이메타크릴레이트, 폴리테트라에틸렌글라이콜다이아크릴레이트, 폴리테트라에틸렌글라이콜다이메타크릴레이트, 네오펜틸글라이콜다이아크릴레이트, 네오펜틸글라이콜다이메타크릴레이트, 3-메틸-1,5-펜테인다이올다이아크릴레이트, 1,6-헥세인다이올다이아크릴레이트, 1,6-헥세인다이올다이메타크릴레이트, 다이메틸올-트라이사이클로데케인다이아크릴레이트, 다이메틸올-트라이사이클로데케인다이메타크릴레이트, 비스페놀 A의 EO(에틸렌옥사이드) 부가물 다이아크릴레이트, 비스페놀 A의 EO 부가물 다이메타크릴레이트, 비스페놀 A의 PO(프로필렌옥사이드) 부가물 다이아크릴레이트, 비스페놀 A의 EO 부가물 다이메타크릴레이트, 2-하이드록시-3-아크릴로일옥시프로필메타크릴레이트, 아이소사이아누르산 EO 변성 다이아크릴레이트, 아이소사이아누르산 변성 다이메타크릴레이트, 그 외 유레테인 결합을 갖는 2관능 아크릴레이트, 유레테인 결합을 갖는 2관능 메타크릴레이트를 사용할 수 있다. 이들은 필요에 따라, 2종 이상을 혼합하여 사용할 수 있다.As specific compounds, triethylene glycol diacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, tetraethylene glycol diacrylate, PEG (polyethylene glycol) 200 Diacrylate, PEG200 Dimethacrylate, PEG600 Diacrylate, PEG600 Dimethacrylate, Polytetraethylene Glycol Diacrylate, Polytetraethylene Glycol Dimethacrylate, Neopentyl Glycol Diacrylate , neopentyl glycol dimethacrylate, 3-methyl-1,5-pentanediol diacrylate, 1,6-hexanediol diacrylate, 1,6-hexanediol dimethacrylate Rate, dimethylol-tricyclodecane diacrylate, dimethylol-tricyclodecane dimethacrylate, EO (ethylene oxide) adduct diacrylate of bisphenol A, EO adduct dimethacrylic acid of bisphenol A Rate, PO (propylene oxide) adduct diacrylate of bisphenol A, EO adduct dimethacrylate of bisphenol A, 2-hydroxy-3-acryloyloxypropyl methacrylate, isocyanuric acid EO modified Diacrylates, isocyanuric acid-modified dimethacrylates, and other bifunctional acrylates having a urethane bond and bifunctional methacrylates having a urethane bond can be used. These can mix and use 2 or more types as needed.
또한, 예를 들면 PEG200 다이아크릴레이트란, 폴리에틸렌글라이콜다이아크릴레이트이며, 폴리에틸렌글라이콜쇄의 식량이 200 정도인 것을 말한다.In addition, for example, PEG200 diacrylate is polyethylene glycol diacrylate, and means that the formula of a polyethylene glycol chain is about 200.
본 발명의 수지 조성물은, 패턴(경화물)의 탄성률 제어에 따른 휨 억제의 관점에서, 라디칼 가교제로서, 단관능 라디칼 가교제를 바람직하게 이용할 수 있다. 단관능 라디칼 가교제로서는, n-뷰틸(메트)아크릴레이트, 2-에틸헥실(메트)아크릴레이트, 2-하이드록시에틸(메트)아크릴레이트, 뷰톡시에틸(메트)아크릴레이트, 카비톨(메트)아크릴레이트, 사이클로헥실(메트)아크릴레이트, 벤질(메트)아크릴레이트, 페녹시에틸(메트)아크릴레이트, N-메틸올(메트)아크릴아마이드, 글리시딜(메트)아크릴레이트, 폴리에틸렌글라이콜모노(메트)아크릴레이트, 폴리프로필렌글라이콜모노(메트)아크릴레이트 등의 (메트)아크릴산 유도체, N-바이닐피롤리돈, N-바이닐카프로락탐 등의 N-바이닐 화합물류, 알릴글리시딜에터 등이 바람직하게 이용된다. 단관능 라디칼 가교제로서는, 노광 전의 휘발을 억제하기 위하여, 상압하에서 100℃ 이상의 비점을 갖는 화합물도 바람직하다.In the resin composition of the present invention, a monofunctional radical crosslinking agent can be preferably used as the radical crosslinking agent from the viewpoint of curvature suppression by controlling the modulus of elasticity of the pattern (cured product). As a monofunctional radical crosslinking agent, n-butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, butoxyethyl (meth) acrylate, carbitol (meth) Acrylate, cyclohexyl (meth)acrylate, benzyl (meth)acrylate, phenoxyethyl (meth)acrylate, N-methylol (meth)acrylamide, glycidyl (meth)acrylate, polyethylene glycol (meth)acrylic acid derivatives such as mono(meth)acrylate and polypropylene glycol mono(meth)acrylate, N-vinyl compounds such as N-vinylpyrrolidone and N-vinylcaprolactam, allylglycidyl Ether and the like are preferably used. As the monofunctional radical crosslinking agent, in order to suppress volatilization before exposure, a compound having a boiling point of 100°C or higher under normal pressure is also preferable.
그 외에, 2관능 이상의 라디칼 가교제로서는, 다이알릴프탈레이트, 트라이알릴트라이멜리테이트 등의 알릴 화합물류를 들 수 있다.In addition, allyl compounds, such as a diallyl phthalate and triallyl trimellitate, are mentioned as a bifunctional or more than bifunctional radical crosslinking agent.
라디칼 가교제를 함유하는 경우, 그 함유량은, 본 발명의 수지 조성물의 전고형분에 대하여, 0질량% 초과 60질량% 이하인 것이 바람직하다. 하한은 5질량% 이상이 보다 바람직하다. 상한은, 50질량% 이하인 것이 보다 바람직하며, 30질량% 이하인 것이 더 바람직하다.When containing a radical crosslinking agent, it is preferable that the content is more than 0 mass % and 60 mass % or less with respect to the total solids of the resin composition of this invention. As for a lower limit, 5 mass % or more is more preferable. As for an upper limit, it is more preferable that it is 50 mass % or less, and it is still more preferable that it is 30 mass % or less.
라디칼 가교제는 1종을 단독으로 이용해도 되지만, 2종 이상을 혼합하여 이용해도 된다. 2종 이상을 병용하는 경우에는 그 합계량이 상기의 범위가 되는 것이 바람직하다.A radical crosslinking agent may be used individually by 1 type, but may mix and use 2 or more types. When using 2 or more types together, it is preferable that the total amount becomes said range.
〔다른 가교제〕[Other crosslinking agents]
본 발명의 수지 조성물은, 상술한 라디칼 가교제와는 상이한, 다른 가교제를 포함하는 것도 바람직하다.It is also preferable that the resin composition of this invention contains another crosslinking agent different from the radical crosslinking agent mentioned above.
본 발명에 있어서, 다른 가교제란, 상술한 라디칼 가교제 이외의 가교제를 말하며, 상술한 광산발생제, 또는, 광염기 발생제의 감광에 의하여, 조성물 중의 다른 화합물 또는 그 반응 생성물과의 사이에서 공유 결합을 형성하는 반응이 촉진되는 기를 분자 내에 복수 개 갖는 화합물인 것이 바람직하고, 조성물 중의 다른 화합물 또는 그 반응 생성물과의 사이에서 공유 결합을 형성하는 반응이 산 또는 염기의 작용에 의하여 촉진되는 기를 분자 내에 복수 개 갖는 화합물이 바람직하다.In the present invention, the other crosslinking agent refers to a crosslinking agent other than the above-mentioned radical crosslinking agent, and a covalent bond between the above-mentioned photoacid generator or photobase generator and other compounds in the composition or a reaction product thereof by photosensitization of the photoacid generator. It is preferable that the compound has a plurality of groups in the molecule that promote the reaction to form a group in the molecule that promotes the reaction of forming a covalent bond with other compounds or reaction products thereof in the composition by the action of an acid or base. A compound having a plurality of them is preferable.
상기 산은, 노광 공정에 있어서, 광산발생제로부터 발생하는 산인 것이 바람직하다.The acid is preferably an acid generated from a photoacid generator in the exposure step.
다른 가교제로서는, 아실옥시메틸기, 메틸올기 및 알콕시메틸기로 이루어지는 군으로부터 선택된 적어도 1종의 기를 갖는 화합물이 바람직하고, 아실옥시메틸기, 메틸올기 및 알콕시메틸기로 이루어지는 군으로부터 선택된 적어도 1종의 기가 질소 원자에 직접 결합한 구조를 갖는 화합물이 보다 바람직하다.As another crosslinking agent, a compound having at least one group selected from the group consisting of an acyloxymethyl group, a methylol group and an alkoxymethyl group is preferable, and at least one group selected from the group consisting of an acyloxymethyl group, a methylol group and an alkoxymethyl group is a nitrogen atom A compound having a structure directly bonded to is more preferred.
다른 가교제로서는, 예를 들면, 멜라민, 글라이콜우릴, 요소, 알킬렌 요소, 벤조구아나민 등의 아미노기 함유 화합물에 폼알데하이드 또는 폼알데하이드와 알코올을 반응시켜, 상기 아미노기의 수소 원자를 아실옥시메틸기, 메틸올기 또는 알콕시메틸기로 치환한 구조를 갖는 화합물을 들 수 있다. 이들 화합물의 제조 방법은 특별히 한정되지 않으며, 상기 방법에 의하여 제조된 화합물과 동일한 구조를 갖는 화합물이면 된다. 또, 이들 화합물의 메틸올기끼리가 자기(自己) 축합되어 이루어지는 올리고머여도 된다.As another crosslinking agent, for example, formaldehyde or formaldehyde and alcohol are reacted with an amino group-containing compound such as melamine, glycoluril, urea, alkylene urea, benzoguanamine, etc., and the hydrogen atom of the amino group is converted to an acyloxymethyl group, methyl Compounds having a structure substituted with an all group or an alkoxymethyl group are exemplified. The manufacturing method of these compounds is not specifically limited, Any compound having the same structure as the compound manufactured by the said method is sufficient. Moreover, the oligomer formed by self condensation of the methylol groups of these compounds may be sufficient.
상기의 아미노기 함유 화합물로서, 멜라민을 이용한 가교제를 멜라민계 가교제, 글라이콜우릴, 요소 또는 알킬렌 요소를 이용한 가교제를 요소계 가교제, 알킬렌 요소를 이용한 가교제를 알킬렌 요소계 가교제, 벤조구아나민을 이용한 가교제를 벤조구아나민계 가교제라고 한다.As the amino group-containing compound, a crosslinking agent using melamine is a melamine crosslinking agent, glycoluril, a crosslinking agent using urea or an alkylene urea is a urea crosslinking agent, a crosslinking agent using alkylene urea is an alkylene urea crosslinking agent, benzoguanamine A crosslinking agent using is called a benzoguanamine-based crosslinking agent.
이들 중에서도, 본 발명의 수지 조성물은, 요소계 가교제 및 멜라민계 가교제로 이루어지는 군으로부터 선택된 적어도 1종의 화합물을 포함하는 것이 바람직하고, 후술하는 글라이콜우릴계 가교제 및 멜라민계 가교제로 이루어지는 군으로부터 선택된 적어도 1종의 화합물을 포함하는 것이 보다 바람직하다.Among these, the resin composition of the present invention preferably contains at least one compound selected from the group consisting of a urea-based crosslinking agent and a melamine-based crosslinking agent, and from the group consisting of a glycoluril-based crosslinking agent and a melamine-based crosslinking agent described later. It is more preferable to include at least one selected compound.
본 발명에 있어서의 알콕시메틸기 및 아실옥시메틸기 중 적어도 하나를 함유하는 화합물로서는, 알콕시메틸기 또는 아실옥시메틸기가, 직접 방향족기나 하기 유레아 구조의 질소 원자 상에, 또는, 트라이아진 상에 치환한 화합물을 구조예로서 들 수 있다.As the compound containing at least one of an alkoxymethyl group and an acyloxymethyl group in the present invention, a compound in which an alkoxymethyl group or an acyloxymethyl group is directly substituted on an aromatic group or a nitrogen atom of the urea structure described below, or on a triazine It can be mentioned as a structural example.
상기 화합물이 갖는 알콕시메틸기 또는 아실옥시메틸기는, 탄소수 2~5가 바람직하고, 탄소수 2 또는 3이 바람직하며, 탄소수 2가 보다 바람직하다.The alkoxymethyl group or acyloxymethyl group of the compound has preferably 2 to 5 carbon atoms, preferably 2 or 3 carbon atoms, and more preferably 2 carbon atoms.
상기 화합물이 갖는 알콕시메틸기 및 아실옥시메틸기의 총수는 1~10이 바람직하고, 보다 바람직하게는 2~8, 특히 바람직하게는 3~6이다.The total number of alkoxymethyl groups and acyloxymethyl groups of the compound is preferably 1 to 10, more preferably 2 to 8, and particularly preferably 3 to 6.
상기 화합물의 분자량은 바람직하게는 1500 이하이며, 180~1200이 바람직하다.The molecular weight of the compound is preferably 1500 or less, preferably 180 to 1200.
[화학식 46][Formula 46]
R100은, 알킬기 또는 아실기를 나타낸다.R 100 represents an alkyl group or an acyl group.
R101 및 R102는, 각각 독립적으로, 1가의 유기기를 나타내고, 서로 결합되어 환을 형성해도 된다.R 101 and R 102 each independently represent a monovalent organic group, and may be bonded to each other to form a ring.
알콕시메틸기 또는 아실옥시메틸기가 직접 방향족기로 치환한 화합물로서는, 예를 들면 하기 일반식과 같은 화합물을 들 수 있다.Examples of the compound in which the alkoxymethyl group or acyloxymethyl group is directly substituted with an aromatic group include compounds of the following general formula.
[화학식 47][Formula 47]
식 중, X는 단결합 또는 2가의 유기기를 나타내고, 개개의 R104는 각각 독립적으로 알킬기 또는 아실기를 나타내며, R103은, 수소 원자, 알킬기, 알켄일기, 아릴기, 아랄킬기, 또는, 산의 작용에 의하여 분해되어, 알칼리 가용성기를 발생시키는 기(예를 들면, 산의 작용에 의하여 탈리되는 기, -C(R4)2COOR5로 나타나는 기(R4는 각각 독립적으로, 수소 원자 또는 탄소수 1~4의 알킬기를 나타내고, R5는 산의 작용에 의하여 탈리되는 기를 나타낸다.))를 나타낸다.In the formula, X represents a single bond or a divalent organic group, each R 104 independently represents an alkyl group or an acyl group, and R 103 is a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, an aralkyl group, or an acid A group that is decomposed by the action and generates an alkali-soluble group (for example, a group that is desorbed by the action of an acid, a group represented by -C(R 4 ) 2 COOR 5 (R 4 are each independently a hydrogen atom or a carbon number) represents an alkyl group of 1 to 4, and R 5 represents a group that is eliminated by the action of an acid.)).
R105는 각각 독립적으로 알킬기 또는 알켄일기를 나타내고, a, b 및 c는 각각 독립적으로 1~3이며, d는 0~4이고, e는 0~3이며, f는 0~3이고, a+d는 5 이하이며, b+e는 4 이하이고, c+f는 4 이하이다.R 105 Each independently represents an alkyl group or an alkenyl group, a, b and c are each independently 1 to 3, d is 0 to 4, e is 0 to 3, f is 0 to 3, and a+ d is 5 or less, b+e is 4 or less, and c+f is 4 or less.
산의 작용에 의하여 분해되어, 알칼리 가용성기를 발생시키는 기, 산의 작용에 의하여 탈리되는 기, -C(R4)2COOR5로 나타나는 기에 있어서의 R5에 대해서는, 예를 들면, -C(R36)(R37)(R38), -C(R36)(R37)(OR39), -C(R01)(R02)(OR39) 등을 들 수 있다.For R 5 in a group decomposed by the action of an acid to generate an alkali-soluble group, a group desorbed by the action of an acid, and a group represented by -C(R 4 ) 2 COOR 5 , for example, -C( R 36 )(R 37 )(R 38 ), -C(R 36 )(R 37 )(OR 39 ), -C(R 01 )(R 02 )(OR 39 ), and the like.
식 중, R36~R39는, 각각 독립적으로, 알킬기, 사이클로알킬기, 아릴기, 아랄킬기 또는 알켄일기를 나타낸다. R36과 R37은, 서로 결합되어 환을 형성해도 된다.In the formula, R 36 to R 39 each independently represent an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group. R 36 and R 37 may be bonded to each other to form a ring.
상기 알킬기로서는, 탄소수 1~10의 알킬기가 바람직하고, 탄소수 1~5의 알킬기가 보다 바람직하다.As said alkyl group, a C1-C10 alkyl group is preferable, and a C1-C5 alkyl group is more preferable.
상기 알킬기는, 직쇄상, 분기쇄상 중 어느 것이어도 된다.The alkyl group may be linear or branched.
상기 사이클로알킬기로서는, 탄소수 3~12의 사이클로알킬기가 바람직하고, 탄소수 3~8의 사이클로알킬기가 보다 바람직하다.As said cycloalkyl group, a C3-C12 cycloalkyl group is preferable, and a C3-C8 cycloalkyl group is more preferable.
상기 사이클로알킬기는 단환 구조여도 되고, 축합환 등의 다환 구조여도 된다.The cycloalkyl group may have a monocyclic structure or a polycyclic structure such as a condensed ring.
상기 아릴기는 탄소수 6~30의 방향족 탄화 수소기인 것이 바람직하고, 페닐기인 것이 보다 바람직하다.It is preferable that the said aryl group is a C6-C30 aromatic hydrocarbon group, and it is more preferable that it is a phenyl group.
상기 아랄킬기로서는, 탄소수 7~20의 아랄킬기가 바람직하고, 탄소수 7~16의 아랄킬기가 보다 바람직하다.As said aralkyl group, a C7-C20 aralkyl group is preferable, and a C7-C16 aralkyl group is more preferable.
상기 아랄킬기는 알킬기에 의하여 치환된 아릴기를 의도하고 있으며, 이들 알킬기 및 아릴기의 바람직한 양태는, 상술한 알킬기 및 아릴기의 바람직한 양태와 동일하다.The aralkyl group is intended to be an aryl group substituted with an alkyl group, and preferred embodiments of these alkyl and aryl groups are the same as those of the above-described alkyl and aryl groups.
상기 알켄일기는 탄소수 3~20의 알켄일기가 바람직하고, 탄소수 3~16의 알켄일기가 보다 바람직하다.The alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms, and more preferably an alkenyl group having 3 to 16 carbon atoms.
또, 이들 기는 본 발명의 효과가 얻어지는 범위 내에서, 공지의 치환기를 더 갖고 있어도 된다.Moreover, these groups may further have a well-known substituent within the range in which the effect of this invention is acquired.
R01 및 R02는, 각각 독립적으로, 수소 원자, 알킬기, 사이클로알킬기, 아릴기, 아랄킬기 또는 알켄일기를 나타낸다.R 01 and R 02 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.
이들 기로서는 바람직하게는, 제3급 알킬에스터기, 아세탈에스터기, 큐밀에스터기, 엔올에스터기 등이다. 더 바람직하게는, 제3급 알킬에스터기, 아세탈에스터기이다.These groups are preferably tertiary alkyl ester groups, acetal ester groups, cumyl ester groups, enol ester groups and the like. More preferably, it is a tertiary alkyl ester group and an acetal ester group.
알콕시메틸기를 갖는 화합물로서는 구체적으로 이하의 구조를 들 수 있다. 아실옥시메틸기를 갖는 화합물은 하기 화합물의 알콕시메틸기를 아실옥시메틸기로 변경한 화합물을 들 수 있다. 알콕시메틸기 또는 아실옥시메틸을 분자 내에 갖는 화합물로서는 이하와 같은 화합물을 들 수 있지만, 이들에 한정되는 것은 아니다.As a compound which has an alkoxymethyl group, the following structures are specifically mentioned. Compounds having an acyloxymethyl group include compounds in which the alkoxymethyl group of the following compounds has been changed to an acyloxymethyl group. Although the following compounds are mentioned as a compound which has an alkoxymethyl group or acyloxymethyl in a molecule|numerator, It is not limited to these.
[화학식 48][Formula 48]
[화학식 49][Formula 49]
알콕시메틸기 및 아실옥시메틸기 중 적어도 하나를 함유하는 화합물은, 시판 중인 것을 이용해도 되고, 공지의 방법에 의하여 합성한 것을 이용해도 된다.As the compound containing at least one of an alkoxymethyl group and an acyloxymethyl group, a commercially available compound may be used, or a compound synthesized by a known method may be used.
내열성의 관점에서, 알콕시메틸기 또는 아실옥시메틸기가, 직접 방향환이나 트라이아진환 상에 치환한 화합물이 바람직하다.From the viewpoint of heat resistance, a compound in which an alkoxymethyl group or an acyloxymethyl group is directly substituted on an aromatic ring or a triazine ring is preferable.
멜라민계 가교제의 구체예로서는, 헥사메톡시메틸멜라민, 헥사에톡시메틸멜라민, 헥사프로폭시메틸멜라민, 헥사뷰톡시뷰틸멜라민 등을 들 수 있다.Specific examples of the melamine-based crosslinking agent include hexamethoxymethylmelamine, hexaethoxymethylmelamine, hexapropoxymethylmelamine, and hexabutoxybutylmelamine.
요소계 가교제의 구체예로서는, 예를 들면, 모노하이드록시메틸화 글라이콜우릴, 다이하이드록시메틸화 글라이콜우릴, 트라이하이드록시메틸화 글라이콜우릴, 테트라하이드록시메틸화 글라이콜우릴, 모노메톡시메틸화 글라이콜우릴, 다이메톡시메틸화 글라이콜우릴, 트라이메톡시메틸화 글라이콜우릴, 테트라메톡시메틸화 글라이콜우릴, 모노메톡시메틸화 글라이콜우릴, 다이메톡시메틸화 글라이콜우릴, 트라이메톡시메틸화 글라이콜우릴, 테트라에톡시메틸화 글라이콜우릴, 모노프로폭시메틸화 글라이콜우릴, 다이프로폭시메틸화 글라이콜우릴, 트라이프로폭시메틸화 글라이콜우릴, 테트라프로폭시메틸화 글라이콜우릴, 모노뷰톡시메틸화 글라이콜우릴, 다이뷰톡시메틸화 글라이콜우릴, 트라이뷰톡시메틸화 글라이콜우릴, 또는, 테트라뷰톡시메틸화 글라이콜우릴 등의 글라이콜우릴계 가교제; 비스메톡시메틸 요소, 비스에톡시메틸 요소, 비스프로폭시메틸 요소, 비스뷰톡시메틸 요소 등의 요소계 가교제, 모노하이드록시메틸화 에틸렌 요소 또는 다이하이드록시메틸화 에틸렌 요소, 모노메톡시메틸화 에틸렌 요소, 다이메톡시메틸화 에틸렌 요소, 모노에톡시메틸화 에틸렌 요소, 다이에톡시메틸화 에틸렌 요소, 모노프로폭시메틸화 에틸렌 요소, 다이프로폭시메틸화 에틸렌 요소, 모노뷰톡시메틸화 에틸렌 요소, 또는, 다이뷰톡시메틸화 에틸렌 요소 등의 에틸렌 요소계 가교제, 모노하이드록시메틸화 프로필렌 요소, 다이하이드록시메틸화 프로필렌 요소, 모노메톡시메틸화 프로필렌 요소, 다이메톡시메틸화 프로필렌 요소, 모노다이에톡시메틸화 프로필렌 요소, 다이에톡시메틸화 프로필렌 요소, 모노프로폭시메틸화 프로필렌 요소, 다이프로폭시메틸화 프로필렌 요소, 모노뷰톡시메틸화 프로필렌 요소, 또는, 다이뷰톡시메틸화 프로필렌 요소 등의 프로필렌 요소계 가교제, 1,3-다이(메톡시메틸)-4,5-다이하이드록시-2-이미다졸리딘온, 1,3-다이(메톡시메틸)-4,5-다이메톡시-2-이미다졸리딘온 등을 들 수 있다.Specific examples of the urea-based crosslinking agent include monohydroxymethylated glycoluril, dihydroxymethylated glycoluril, trihydroxymethylated glycoluril, tetrahydroxymethylated glycoluril, monomethoxy Methylated glycoluril, dimethoxymethylated glycoluril, trimethoxymethylated glycoluril, tetramethoxymethylated glycoluril, monomethoxymethylated glycoluril, dimethoxymethylated glycoluril , trimethoxymethylated glycoluril, tetraethoxymethylated glycoluril, monopropoxymethylated glycoluril, dipropoxymethylated glycoluril, tripropoxymethylated glycoluril, tetrapropoxymethylated Glycoluril-based crosslinking agents such as glycoluril, monobutoxymethylated glycoluril, dibutoxymethylated glycoluril, tributoxymethylated glycoluril, or tetrabutoxymethylated glycoluril ; Urea-based crosslinking agents such as bismethoxymethyl urea, bisethoxymethyl urea, bispropoxymethyl urea, and bisbutoxymethyl urea, monohydroxymethylated ethylene urea, dihydroxymethylated ethylene urea, monomethoxymethylated ethylene urea, dimethoxymethylated ethylene urea, monoethoxymethylated ethylene urea, diethoxymethylated ethylene urea, monopropoxymethylated ethylene urea, dipropoxymethylated ethylene urea, monobutoxymethylated ethylene urea, or dibutoxymethylated ethylene urea Ethylene urea crosslinking agent, monohydroxymethylated propylene urea, dihydroxymethylated propylene urea, monomethoxymethylated propylene urea, dimethoxymethylated propylene urea, monodiethoxymethylated propylene urea, diethoxymethylated propylene urea, etc. Propylene urea-based crosslinking agents such as monopropoxymethylated propylene urea, dipropoxymethylated propylene urea, monobutoxymethylated propylene urea, or dibutoxymethylated propylene urea, 1,3-di(methoxymethyl)-4,5 -Dihydroxy-2-imidazolidinone, 1,3-di(methoxymethyl)-4,5-dimethoxy-2-imidazolidinone, etc. are mentioned.
벤조구아나민계 가교제의 구체예로서는, 예를 들면 모노하이드록시메틸화 벤조구아나민, 다이하이드록시메틸화 벤조구아나민, 트라이하이드록시메틸화 벤조구아나민, 테트라하이드록시메틸화 벤조구아나민, 모노메톡시메틸화 벤조구아나민, 다이메톡시메틸화 벤조구아나민, 트라이메톡시메틸화 벤조구아나민, 테트라메톡시메틸화 벤조구아나민, 모노메톡시메틸화 벤조구아나민, 다이메톡시메틸화 벤조구아나민, 트라이메톡시메틸화 벤조구아나민, 테트라에톡시메틸화 벤조구아나민, 모노프로폭시메틸화 벤조구아나민, 다이프로폭시메틸화 벤조구아나민, 트라이프로폭시메틸화 벤조구아나민, 테트라프로폭시메틸화 벤조구아나민, 모노뷰톡시메틸화 벤조구아나민, 다이뷰톡시메틸화 벤조구아나민, 트라이뷰톡시메틸화 벤조구아나민, 테트라뷰톡시메틸화 벤조구아나민 등을 들 수 있다.Specific examples of the benzoguanamine-based crosslinking agent include monohydroxymethylated benzoguanamine, dihydroxymethylated benzoguanamine, trihydroxymethylated benzoguanamine, tetrahydroxymethylated benzoguanamine, and monomethoxymethylated benzoguanamine. Namine, dimethoxymethylated benzoguanamine, trimethoxymethylated benzoguanamine, tetramethoxymethylated benzoguanamine, monomethoxymethylated benzoguanamine, dimethoxymethylated benzoguanamine, trimethoxymethylated benzoguanamine, Tetraethoxymethylated Benzoguanamine, Monopropoxymethylated Benzoguanamine, Dipropoxymethylated Benzoguanamine, Tripropoxymethylated Benzoguanamine, Tetrapropoxymethylated Benzoguanamine, Monobutoxymethylated Benzoguanamine, Dibu Toxymethylation benzoguanamine, tributoxymethylation benzoguanamine, tetrabutoxymethylation benzoguanamine, etc. are mentioned.
그 외에, 메틸올기 및 알콕시메틸기로 이루어지는 군으로부터 선택된 적어도 1종의 기를 갖는 화합물로서는, 방향환(바람직하게는 벤젠환)에 메틸올기 및 알콕시메틸기로 이루어지는 군으로부터 선택된 적어도 1종의 기가 직접 결합한 화합물도 적합하게 이용된다.In addition, as a compound having at least one group selected from the group consisting of a methylol group and an alkoxymethyl group, a compound in which at least one group selected from the group consisting of a methylol group and an alkoxymethyl group is directly bonded to an aromatic ring (preferably a benzene ring). are also suitably used.
이와 같은 화합물의 구체예로서는, 벤젠다이메탄올, 비스(하이드록시메틸)크레졸, 비스(하이드록시메틸)다이메톡시벤젠, 비스(하이드록시메틸)다이페닐에터, 비스(하이드록시메틸)벤조페논, 하이드록시메틸벤조산 하이드록시메틸페닐, 비스(하이드록시메틸)바이페닐, 다이메틸비스(하이드록시메틸)바이페닐, 비스(메톡시메틸)벤젠, 비스(메톡시메틸)크레졸, 비스(메톡시메틸)다이메톡시벤젠, 비스(메톡시메틸)다이페닐에터, 비스(메톡시메틸)벤조페논, 메톡시메틸벤조산 메톡시메틸페닐, 비스(메톡시메틸)바이페닐, 다이메틸비스(메톡시메틸)바이페닐, 4,4',4''-에틸리덴트리스[2,6-비스(메톡시메틸)페놀], 5,5'-[2,2,2-트라이플루오로-1-(트라이플루오로메틸)에틸리덴]비스[2-하이드록시-1,3-벤젠다이메탄올], 3,3',5,5'-테트라키스(메톡시메틸)-1,1'-바이페닐-4,4'-다이올 등을 들 수 있다.Specific examples of such compounds include benzenedimethanol, bis(hydroxymethyl)cresol, bis(hydroxymethyl)dimethoxybenzene, bis(hydroxymethyl)diphenyl ether, bis(hydroxymethyl)benzophenone, Hydroxymethylbenzoic acid Hydroxymethylphenyl, bis(hydroxymethyl)biphenyl, dimethylbis(hydroxymethyl)biphenyl, bis(methoxymethyl)benzene, bis(methoxymethyl)cresol, bis(methoxymethyl) Dimethoxybenzene, bis(methoxymethyl)diphenyl ether, bis(methoxymethyl)benzophenone, methoxymethylbenzoic acid methoxymethylphenyl, bis(methoxymethyl)biphenyl, dimethylbis(methoxymethyl) Biphenyl, 4,4',4''-ethylidentris[2,6-bis(methoxymethyl)phenol], 5,5'-[2,2,2-trifluoro-1-(tri Fluoromethyl) ethylidene] bis [2-hydroxy-1,3-benzenedimethanol], 3,3 ', 5,5'-tetrakis (methoxymethyl) -1,1'-biphenyl-4 , 4'-diol, etc. are mentioned.
다른 가교제로서는 시판품을 이용해도 되고, 적합한 시판품으로서는, 46DMOC, 46DMOEP(이상, 아사히 유키자이 고교사제), DML-PC, DML-PEP, DML-OC, DML-OEP, DML-34X, DML-PTBP, DML-PCHP, DML-OCHP, DML-PFP, DML-PSBP, DML-POP, DML-MBOC, DML-MBPC, DML-MTrisPC, DML-BisOC-Z, DML-BisOCHP-Z, DML-BPC, DMLBisOC-P, DMOM-PC, DMOM-PTBP, DMOM-MBPC, TriML-P, TriML-35XL, TML-HQ, TML-BP, TML-pp-BPF, TML-BPE, TML-BPA, TML-BPAF, TML-BPAP, TMOM-BP, TMOM-BPE, TMOM-BPA, TMOM-BPAF, TMOM-BPAP, HML-TPPHBA, HML-TPHAP, HMOM-TPPHBA, HMOM-TPHAP(이상, 혼슈 가가쿠 고교사제), 니카락(등록 상표, 이하 동일) MX-290, 니카락 MX-280, 니카락 MX-270, 니카락 MX-279, 니카락 MW-100LM, 니카락 MX-750LM(이상, 산와 케미컬사제) 등을 들 수 있다.Commercially available products may be used as other crosslinking agents, and suitable commercially available products include 46DMOC, 46DMOEP (above, manufactured by Asahi Yukizai Kogyo Co., Ltd.), DML-PC, DML-PEP, DML-OC, DML-OEP, DML-34X, DML-PTBP, DML-PCHP, DML-OCHP, DML-PFP, DML-PSBP, DML-POP, DML-MBOC, DML-MBPC, DML-MTrisPC, DML-BisOC-Z, DML-BisOCHP-Z, DML-BPC, DMLBisOC- P, DMOM-PC, DMOM-PTBP, DMOM-MBPC, TriML-P, TriML-35XL, TML-HQ, TML-BP, TML-pp-BPF, TML-BPE, TML-BPA, TML-BPAF, TML- BPAP, TMOM-BP, TMOM-BPE, TMOM-BPA, TMOM-BPAF, TMOM-BPAP, HML-TPPHBA, HML-TPHAP, HMOM-TPPHBA, HMOM-TPHAP (above, made by Honshu Kagaku Kogyo), Nikarak ( (registered trademark, hereinafter the same) MX-290, Nikarak MX-280, Nikarak MX-270, Nikarak MX-279, Nikarak MW-100LM, Nikarak MX-750LM (above, manufactured by Sanwa Chemical Co., Ltd.), etc. there is.
또, 본 발명의 수지 조성물은, 다른 가교제로서, 에폭시 화합물, 옥세테인 화합물, 및, 벤즈옥사진 화합물로 이루어지는 군으로부터 선택된 적어도 1종의 화합물을 포함하는 것도 바람직하다.Moreover, it is also preferable that the resin composition of this invention contains at least 1 sort(s) of compound selected from the group which consists of an epoxy compound, an oxetane compound, and a benzoxazine compound as another crosslinking agent.
-에폭시 화합물(에폭시기를 갖는 화합물)--Epoxy compound (compound having an epoxy group)-
에폭시 화합물로서는, 1분자 중에 에폭시기를 2 이상 갖는 화합물인 것이 바람직하다. 에폭시기는, 200℃ 이하에서 가교 반응하고, 또한, 가교에서 유래하는 탈수 반응이 일어나지 않기 때문에 막 수축이 일어나기 어렵다. 이 때문에, 에폭시 화합물을 함유하는 것은, 본 발명의 수지 조성물의 저온 경화 및 휨의 억제에 효과적이다.As an epoxy compound, it is preferable that it is a compound which has 2 or more epoxy groups in 1 molecule. Since the epoxy group undergoes a crosslinking reaction at 200°C or lower and no dehydration reaction resulting from the crosslinking occurs, film shrinkage is unlikely to occur. For this reason, containing an epoxy compound is effective in low-temperature hardening of the resin composition of this invention and suppression of curvature.
에폭시 화합물은, 폴리에틸렌옥사이드기를 함유하는 것이 바람직하다. 이로써, 보다 탄성률이 저하되고, 또 휨을 억제할 수 있다. 폴리에틸렌옥사이드기는, 에틸렌옥사이드의 반복 단위수가 2 이상인 것을 의미하고, 반복 단위수가 2~15인 것이 바람직하다.It is preferable that the epoxy compound contains a polyethylene oxide group. Thereby, the modulus of elasticity is lowered and the warpage can be suppressed. A polyethylene oxide group means that the number of repeating units of ethylene oxide is 2 or more, and it is preferable that the number of repeating units is 2-15.
에폭시 화합물의 예로서는, 비스페놀 A형 에폭시 수지; 비스페놀 F형 에폭시 수지; 프로필렌글라이콜다이글리시딜에터, 네오펜틸글라이콜다이글리시딜에터, 에틸렌글라이콜다이글리시딜에터, 뷰틸렌글라이콜다이글리시딜에터, 헥사메틸렌글라이콜다이글리시딜에터, 트라이메틸올프로페인트라이글리시딜에터 등의 알킬렌글라이콜형 에폭시 수지 또는 다가 알코올 탄화 수소형 에폭시 수지; 폴리프로필렌글라이콜다이글리시딜에터 등의 폴리알킬렌글라이콜형 에폭시 수지; 폴리메틸(글리시딜옥시프로필)실록세인 등의 에폭시기 함유 실리콘 등을 들 수 있지만, 이들에 한정되지 않는다. 구체적으로는, 에피클론(등록 상표) 850-S, 에피클론(등록 상표) HP-4032, 에피클론(등록 상표) HP-7200, 에피클론(등록 상표) HP-820, 에피클론(등록 상표) HP-4700, 에피클론(등록 상표) HP-4770, 에피클론(등록 상표) EXA-830LVP, 에피클론(등록 상표) EXA-8183, 에피클론(등록 상표) EXA-8169, 에피클론(등록 상표) N-660, 에피클론(등록 상표) N-665-EXP-S, 에피클론(등록 상표) N-740(이상 상품명, DIC(주)제), 리카레진(등록 상표) BEO-20E, 리카레진(등록 상표) BEO-60E, 리카레진(등록 상표) HBE-100, 리카레진(등록 상표) DME-100, 리카레진(등록 상표) L-200(상품명, 신니혼 리카(주)), EP-4003S, EP-4000S, EP-4088S, EP-3950S(이상 상품명, (주)ADEKA제), 셀록사이드(등록 상표) 2021P, 셀록사이드(등록 상표) 2081, 셀록사이드(등록 상표) 2000, EHPE3150, 에폴리드(등록 상표) GT401, 에폴리드(등록 상표) PB4700, 에폴리드(등록 상표) PB3600(이상 상품명, (주)다이셀제), NC-3000, NC-3000-L, NC-3000-H, NC-3000-FH-75M, NC-3100, CER-3000-L, NC-2000-L, XD-1000, NC-7000L, NC-7300L, EPPN-501H, EPPN-501HY, EPPN-502H, EOCN-1020, EOCN-102S, EOCN-103S, EOCN-104S, CER-1020, EPPN-201, BREN-S, BREN-10S(이상 상품명, 닛폰 가야쿠(주)제) 등을 들 수 있다. 또 이하의 화합물도 적합하게 이용된다.As an example of an epoxy compound, it is bisphenol-A epoxy resin; bisphenol F-type epoxy resin; Propylene glycol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, butylene glycol diglycidyl ether, hexamethylene glycol alkylene glycol type epoxy resins or polyhydric alcohol hydrocarbon type epoxy resins such as diglycidyl ether and trimethylolpropane triglycidyl ether; polyalkylene glycol type epoxy resins such as polypropylene glycol diglycidyl ether; Epoxy group-containing silicones, such as polymethyl (glycidyloxypropyl) siloxane, etc. are mentioned, but are not limited to these. Specifically, Epiclon (registered trademark) 850-S, Epiclon (registered trademark) HP-4032, Epiclon (registered trademark) HP-7200, Epiclon (registered trademark) HP-820, Epiclon (registered trademark) HP-4700, Epiclon (registered trademark) HP-4770, Epiclon (registered trademark) EXA-830LVP, Epiclon (registered trademark) EXA-8183, Epiclon (registered trademark) EXA-8169, Epiclon (registered trademark) N-660, Epiclon (registered trademark) N-665-EXP-S, Epiclon (registered trademark) N-740 (above product names, manufactured by DIC Co., Ltd.), Rica Resin (registered trademark) BEO-20E, Rica Resin (registered trademark) BEO-60E, Rika Resin (registered trademark) HBE-100, Rika Resin (registered trademark) DME-100, Rika Resin (registered trademark) L-200 (trade name, New Japan Rica Co., Ltd.), EP- 4003S, EP-4000S, EP-4088S, EP-3950S (above product names, manufactured by ADEKA Co., Ltd.), Celoxide (registered trademark) 2021P, Celoxide (registered trademark) 2081, Celoxide (registered trademark) 2000, EHPE3150, Epolide (registered trademark) GT401, Epolide (registered trademark) PB4700, Epolide (registered trademark) PB3600 (above product names, manufactured by Daicel Co., Ltd.), NC-3000, NC-3000-L, NC-3000 -H, NC-3000-FH-75M, NC-3100, CER-3000-L, NC-2000-L, XD-1000, NC-7000L, NC-7300L, EPPN-501H, EPPN-501HY, EPPN-502H , EOCN-1020, EOCN-102S, EOCN-103S, EOCN-104S, CER-1020, EPPN-201, BREN-S, BREN-10S (above brand name, Nippon Kayaku Co., Ltd. product), etc. are mentioned. Moreover, the following compounds are also used suitably.
[화학식 50][Formula 50]
식 중 n은 1~5의 정수, m은 1~20의 정수이다.In the formula, n is an integer of 1 to 5, m is an integer of 1 to 20.
상기 구조 중에서도, 내열성과 신도 향상을 양립시키는 점에서, n은 1~2, m은 3~7인 것이 바람직하다.Among the above structures, it is preferable that n is 1 to 2 and m is 3 to 7 from the viewpoint of achieving both heat resistance and elongation improvement.
-옥세테인 화합물(옥세탄일기를 갖는 화합물)--Oxetane compound (compound having an oxetanyl group)-
옥세테인 화합물로서는, 1분자 중에 옥세테인환을 2개 이상 갖는 화합물, 3-에틸-3-하이드록시메틸옥세테인, 1,4-비스{[(3-에틸-3-옥세탄일)메톡시]메틸}벤젠, 3-에틸-3-(2-에틸헥실메틸)옥세테인, 1,4-벤젠다이카복실산-비스[(3-에틸-3-옥세탄일)메틸]에스터 등을 들 수 있다. 구체적인 예로서는, 도아 고세이(주)제의 아론 옥세테인 시리즈(예를 들면, OXT-121, OXT-221)를 적합하게 사용할 수 있고, 이들은 단독으로, 또는 2종 이상 혼합해도 된다.As the oxetane compound, a compound having two or more oxetane rings in one molecule, 3-ethyl-3-hydroxymethyloxetane, 1,4-bis{[(3-ethyl-3-oxetanyl)methoxy ]methyl}benzene, 3-ethyl-3-(2-ethylhexylmethyl)oxetane, 1,4-benzenedicarboxylic acid-bis[(3-ethyl-3-oxetanyl)methyl] ester, and the like. . As a specific example, Aron Oxetane series (eg, OXT-121, OXT-221) manufactured by Toagosei Co., Ltd. can be suitably used, and these may be used alone or in combination of two or more.
-벤즈옥사진 화합물(벤즈옥사졸일기를 갖는 화합물)--Benzoxazine compound (compound having a benzoxazolyl group)-
벤즈옥사진 화합물은, 개환 부가 반응에서 유래하는 가교 반응 때문에, 경화 시에 탈가스가 발생하지 않고, 또한 열수축을 작게 하여 휨의 발생이 억제되는 점에서 바람직하다.The benzoxazine compound is preferable in that it does not generate degassing during curing due to a crosslinking reaction derived from a ring-opening addition reaction, and suppresses occurrence of warpage by reducing heat shrinkage.
벤즈옥사진 화합물의 바람직한 예로서는, P-d형 벤즈옥사진, F-a형 벤즈옥사진(이상, 상품명, 시코쿠 가세이 고교사제), 폴리하이드록시스타이렌 수지의 벤즈옥사진 부가물, 페놀 노볼락형 다이하이드로벤즈옥사진 화합물을 들 수 있다. 이들은 단독으로 이용하거나, 또는 2종 이상 혼합해도 된다.Preferable examples of the benzoxazine compound include P-d-type benzoxazine, F-a-type benzoxazine (above, trade name, manufactured by Shikoku Kasei Kogyo Co., Ltd.), benzoxazine adducts of polyhydroxystyrene resins, and phenol novolak-type dihydrobenzene. An oxazine compound is mentioned. These may be used independently or may mix 2 or more types.
다른 가교제의 함유량은, 본 발명의 수지 조성물의 전고형분에 대하여 0.1~30질량%인 것이 바람직하고, 0.1~20질량%인 것이 보다 바람직하며, 0.5~15질량%인 것이 더 바람직하고, 1.0~10질량%인 것이 특히 바람직하다. 다른 가교제는 1종만 함유하고 있어도 되고, 2종 이상 함유하고 있어도 된다. 다른 가교제를 2종 이상 함유하는 경우는, 그 합계가 상기 범위인 것이 바람직하다.The content of the other crosslinking agent is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, still more preferably 0.5 to 15% by mass, and preferably 1.0 to 15% by mass, based on the total solid content of the resin composition of the present invention. It is especially preferable that it is 10 mass %. Another crosslinking agent may contain only 1 type, and may contain 2 or more types. When 2 or more types of other crosslinking agents are contained, it is preferable that the sum total is the said range.
<금속 접착성 개량제><Metal Adhesion Improver>
본 발명의 수지 조성물은, 전극이나 배선 등에 이용되는 금속 재료와의 접착성을 향상시키기 위한 금속 접착성 개량제를 포함하고 있는 것이 바람직하다. 금속 접착성 개량제로서는, 알콕시실릴기를 갖는 실레인 커플링제, 알루미늄계 접착 조제(助劑), 타이타늄계 접착 조제, 설폰아마이드 구조를 갖는 화합물 및 싸이오유레아 구조를 갖는 화합물, 인산 유도체 화합물, β-케토에스터 화합물, 아미노 화합물 등을 들 수 있다.The resin composition of the present invention preferably contains a metal adhesion improving agent for improving adhesion to metal materials used for electrodes, wiring, and the like. As the metal adhesion improving agent, a silane coupling agent having an alkoxysilyl group, an aluminum-based adhesion promoter, a titanium-based adhesion promoter, a compound having a sulfonamide structure, a compound having a thiourea structure, a phosphoric acid derivative compound, β- A keto ester compound, an amino compound, etc. are mentioned.
〔실레인 커플링제〕[Silane coupling agent]
실레인 커플링제로서는, 예를 들면, 국제 공개공보 제2015/199219호의 단락 0167에 기재된 화합물, 일본 공개특허공보 2014-191002호의 단락 0062~0073에 기재된 화합물, 국제 공개공보 제2011/080992호의 단락 0063~0071에 기재된 화합물, 일본 공개특허공보 2014-191252호의 단락 0060~0061에 기재된 화합물, 일본 공개특허공보 2014-041264호의 단락 0045~0052에 기재된 화합물, 국제 공개공보 제2014/097594호의 단락 0055에 기재된 화합물, 일본 공개특허공보 2018-173573호의 단락 0067~0078에 기재된 화합물을 들 수 있으며, 이들 내용은 본 명세서에 원용된다. 또, 일본 공개특허공보 2011-128358호의 단락 0050~0058에 기재된 바와 같이 상이한 2종 이상의 실레인 커플링제를 이용하는 것도 바람직하다. 또, 실레인 커플링제는, 하기 화합물을 이용하는 것도 바람직하다. 이하의 식 중, Me는 메틸기를, Et는 에틸기를 나타낸다.As a silane coupling agent, the compound of Paragraph 0167 of International Publication No. 2015/199219, the compound of Paragraph 0062 of Unexamined-Japanese-Patent No. 2014-191002 - the compound of 0073, Paragraph 0063 of International Publication No. 2011/080992, for example The compound described in ~ 0071, the compound described in paragraphs 0060 to 0061 of Japanese Laid-open Patent Publication No. 2014-191252, the compound described in paragraphs 0045 to 0052 of Japanese Patent Laid-Open No. 2014-041264, and the paragraph 0055 of International Publication No. 2014/097594 A compound and Paragraph 0067 of Unexamined-Japanese-Patent No. 2018-173573 - the compound of 0078 are mentioned, These content is integrated in this specification. Moreover, it is also preferable to use 2 or more types of silane coupling agents different as Paragraph 0050 of Unexamined-Japanese-Patent No. 2011-128358 - 0058 describe. Moreover, it is also preferable to use the following compound as a silane coupling agent. In the formulas below, Me represents a methyl group and Et represents an ethyl group.
[화학식 51][Formula 51]
다른 실레인 커플링제로서는, 예를 들면, 바이닐트라이메톡시실레인, 바이닐트라이에톡시실레인, 2-(3,4-에폭시사이클로헥실)에틸트라이메톡시실레인, 3-글리시독시프로필메틸다이메톡시실레인, 3-글리시독시프로필트라이메톡시실레인, 3-글리시독시프로필메틸다이에톡시실레인, 3-글리시독시프로필트라이에톡시실레인, p-스타이릴트라이메톡시실레인, 3-메타크릴옥시프로필메틸다이메톡시실레인, 3-메타크릴옥시프로필트라이메톡시실레인, 3-메타크릴옥시프로필메틸다이에톡시실레인, 3-메타크릴옥시프로필트라이에톡시실레인, 3-아크릴옥시프로필트라이메톡시실레인, N-2-(아미노에틸)-3-아미노프로필메틸다이메톡시실레인, N-2-(아미노에틸)-3-아미노프로필트라이메톡시실레인, 3-아미노프로필트라이메톡시실레인, 3-아미노프로필트라이에톡시실레인, 3-트라이에톡시실릴-N-(1,3-다이메틸-뷰틸리덴)프로필아민, N-페닐-3-아미노프로필트라이메톡시실레인, 트리스-(트라이메톡시실릴프로필)아이소사이아누레이트, 3-유레이도프로필트라이알콕시실레인, 3-머캅토프로필메틸다이메톡시실레인, 3-머캅토프로필트라이메톡시실레인, 3-아이소사이아네이트프로필트라이에톡시실레인, 3-트라이메톡시실릴프로필석신산 무수물을 들 수 있다. 이들은 1종 단독 또는 2종 이상을 조합하여 사용할 수 있다.Examples of other silane coupling agents include vinyltrimethoxysilane, vinyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, and 3-glycidoxypropylmethyl. Dimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxy Silane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxy Silane, 3-acryloxypropyltrimethoxysilane, N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(aminoethyl)-3-aminopropyltrimethoxy Silane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N-(1,3-dimethyl-butylidene)propylamine, N-phenyl -3-aminopropyltrimethoxysilane, tris-(trimethoxysilylpropyl)isocyanurate, 3-ureidopropyltrialkoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mer Captopropyltrimethoxysilane, 3-isocyanate propyltriethoxysilane, and 3-trimethoxysilylpropylsuccinic acid anhydride. These can be used individually by 1 type or in combination of 2 or more types.
〔알루미늄계 접착 조제〕[Aluminum-based adhesive aid]
알루미늄계 접착 조제로서는, 예를 들면, 알루미늄트리스(에틸아세토아세테이트), 알루미늄트리스(아세틸아세토네이트), 에틸아세토아세테이트알루미늄다이아이소프로필레이트 등을 들 수 있다.Examples of aluminum-based adhesive aids include aluminum tris (ethylacetoacetate), aluminum tris (acetylacetonate), and ethylacetoacetate aluminum diisopropylate.
또, 그 외의 금속 접착성 개량제로서는, 일본 공개특허공보 2014-186186호의 단락 0046~0049에 기재된 화합물, 일본 공개특허공보 2013-072935호의 단락 0032~0043에 기재된 설파이드계 화합물을 이용할 수도 있으며, 이들 내용은 본 명세서에 원용된다.Moreover, as other metal adhesion improving agents, the compound described in Paragraph 0046 of Unexamined-Japanese-Patent No. 2014-186186 - 0049, and the sulfide-type compound of Paragraph 0032 - 0043 of Unexamined-Japanese-Patent No. 2013-072935 can also be used, These content is incorporated herein.
금속 접착성 개량제의 함유량은 특정 수지 100질량부에 대하여, 바람직하게는 0.1~30질량부이고, 보다 바람직하게는 0.01~10질량부의 범위이며, 더 바람직하게는 0.5~5질량부의 범위이다. 상기 하한값 이상으로 함으로써 패턴과 금속층의 접착성이 양호해지고, 상기 상한값 이하로 함으로써 패턴의 내열성, 기계 특성이 양호해진다. 금속 접착성 개량제는 1종만이어도 되고, 2종 이상이어도 된다. 2종 이상 이용하는 경우는, 그 합계가 상기 범위인 것이 바람직하다.The content of the metal adhesion improving agent is preferably 0.1 to 30 parts by mass, more preferably 0.01 to 10 parts by mass, and still more preferably 0.5 to 5 parts by mass, based on 100 parts by mass of the specific resin. By using the above lower limit or more, the adhesion between the pattern and the metal layer becomes good, and by using the above upper limit or less, the heat resistance and mechanical properties of the pattern become good. The metal adhesion improver may be one type or two or more types. When using 2 or more types, it is preferable that the sum total is the said range.
<마이그레이션 억제제><Migration inhibitor>
본 발명의 수지 조성물은, 마이그레이션 억제제를 더 포함하는 것이 바람직하다. 마이그레이션 억제제를 포함함으로써, 금속층(금속 배선) 유래의 금속 이온이 막 내로 이동하는 것을 효과적으로 억제 가능해진다.It is preferable that the resin composition of this invention further contains a migration inhibitor. By including the migration inhibitor, it becomes possible to effectively suppress the migration of metal ions derived from the metal layer (metal wiring) into the film.
마이그레이션 억제제로서는, 특별히 제한은 없지만, 복소환(피롤환, 퓨란환, 싸이오펜환, 이미다졸환, 옥사졸환, 싸이아졸환, 피라졸환, 아이소옥사졸환, 아이소싸이아졸환, 테트라졸환, 피리딘환, 피리다진환, 피리미딘환, 피라진환, 피페리딘환, 피페라진환, 모폴린환, 2H-피란환 및 6H-피란환, 트라이아진환)을 갖는 화합물, 싸이오 요소류 및 설판일기를 갖는 화합물, 힌더드 페놀계 화합물, 살리실산 유도체계 화합물, 하이드라자이드 유도체계 화합물을 들 수 있다. 특히, 1,2,4-트라이아졸, 벤조트라이아졸, 3-아미노-1,2,4-트라이아졸, 3,5-다이아미노-1,2,4-트라이아졸 등의 트라이아졸계 화합물, 1H-테트라졸, 5-페닐테트라졸, 5-아미노-1H-테트라졸 등의 테트라졸계 화합물을 바람직하게 사용할 수 있다.The migration inhibitor is not particularly limited, but is a heterocyclic ring (pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyrazole ring, isoxazole ring, isothiazole ring, tetrazole ring, pyridine ring, pyridazine ring, pyrimidine ring, pyrazine ring, piperidine ring, piperazine ring, morpholine ring, 2H-pyran ring and 6H-pyran ring, triazine ring) compounds having thioureas and sulfanyl groups , hindered phenol-based compounds, salicylic acid derivative-based compounds, and hydrazide derivative-based compounds. In particular, triazole-based compounds such as 1,2,4-triazole, benzotriazole, 3-amino-1,2,4-triazole, and 3,5-diamino-1,2,4-triazole; Tetrazole compounds such as 1H-tetrazole, 5-phenyltetrazole, and 5-amino-1H-tetrazole can be preferably used.
또는 할로젠 이온 등의 음이온을 포착하는 이온 트랩제를 사용할 수도 있다.Alternatively, an ion trapping agent that traps negative ions such as halogen ions can also be used.
그 외의 마이그레이션 억제제로서는, 일본 공개특허공보 2013-015701호의 단락 0094에 기재된 방청제, 일본 공개특허공보 2009-283711호의 단락 0073~0076에 기재된 화합물, 일본 공개특허공보 2011-059656호의 단락 0052에 기재된 화합물, 일본 공개특허공보 2012-194520호의 단락 0114, 0116 및 0118에 기재된 화합물, 국제 공개공보 제2015/199219호의 단락 0166에 기재된 화합물 등을 사용할 수 있으며, 이들 내용은 본 명세서에 원용된다.As other migration inhibitors, the rust inhibitor described in paragraph 0094 of JP-A-2013-015701, the compound described in paragraphs 0073 to 0076 of JP-A-2009-283711, the compound described in paragraph 0052 of JP-A-2011-059656, The compound of Paragraph 0114 of Unexamined-Japanese-Patent No. 2012-194520, 0116, and 0118, the compound of Paragraph 0166 of International Publication No. 2015/199219, etc. can be used, These content is integrated in this specification.
마이그레이션 억제제의 구체예로서는, 하기 화합물을 들 수 있다.Specific examples of the migration inhibitor include the following compounds.
[화학식 52][Formula 52]
본 발명의 수지 조성물이 마이그레이션 억제제를 갖는 경우, 마이그레이션 억제제의 함유량은, 본 발명의 수지 조성물의 전고형분에 대하여, 0.01~5.0질량%인 것이 바람직하고, 0.05~2.0질량%인 것이 보다 바람직하며, 0.1~1.0질량%인 것이 더 바람직하다.When the resin composition of the present invention has a migration inhibitor, the content of the migration inhibitor is preferably 0.01 to 5.0% by mass, and more preferably 0.05 to 2.0% by mass, based on the total solid content of the resin composition of the present invention. It is more preferable that it is 0.1-1.0 mass %.
마이그레이션 억제제는 1종만이어도 되고, 2종 이상이어도 된다. 마이그레이션 억제제가 2종 이상인 경우는, 그 합계가 상기 범위인 것이 바람직하다.One type of migration inhibitor may be sufficient as it, and 2 or more types may be sufficient as it. When there are 2 or more types of migration inhibitors, it is preferable that the sum total is the said range.
<중합 금지제><Polymerization inhibitor>
본 발명의 수지 조성물은, 중합 금지제를 포함하는 것이 바람직하다. 중합 금지제로서는 페놀계 화합물, 퀴논계 화합물, 아미노계 화합물, N-옥실 프리 라디칼 화합물계 화합물, 나이트로계 화합물, 나이트로소계 화합물, 헤테로 방향환계 화합물, 금속 화합물 등을 들 수 있다.It is preferable that the resin composition of this invention contains a polymerization inhibitor. Examples of the polymerization inhibitor include phenol-based compounds, quinone-based compounds, amino-based compounds, N-oxyl free radical compound-based compounds, nitro-based compounds, nitroso-based compounds, heteroaromatic compounds, and metal compounds.
중합 금지제의 구체적인 화합물로서는, p-하이드로퀴논, o-하이드로퀴논, o-메톡시페놀, p-메톡시페놀, 다이-tert-뷰틸-p-크레졸, 파이로갈롤, p-tert-뷰틸카테콜, 1,4-벤조퀴논, 다이페닐-p-벤조퀴논, 4,4'-싸이오비스(3-메틸-6-tert-뷰틸페놀), 2,2'-메틸렌비스(4-메틸-6-tert-뷰틸페놀), N-나이트로소페닐하이드록시아민 제1 세륨염, N-나이트로소-N-페닐하이드록시아민알루미늄염, N-나이트로소다이페닐아민, N-페닐나프틸아민, 에틸렌다이아민 사아세트산, 1,2-사이클로헥세인다이아민 사아세트산, 글라이콜에터다이아민 사아세트산, 2,6-다이-tert-뷰틸-4-메틸페놀, 5-나이트로소-8-하이드록시퀴놀린, 1-나이트로소-2-나프톨, 2-나이트로소-1-나프톨, 2-나이트로소-5-(N-에틸-N-설포프로필아미노)페놀, N-나이트로소-N-(1-나프틸)하이드록시아민암모늄염, 비스(4-하이드록시-3,5-tert-뷰틸)페닐메테인, 1,3,5-트리스(4-t-뷰틸-3-하이드록시-2,6-다이메틸벤질)-1,3,5-트라이아진-2,4,6-(1H,3H,5H)-트라이온, 4-하이드록시-2,2,6,6-테트라메틸피페리딘 1-옥실 프리 라디칼, 2,2,6,6-테트라메틸피페리딘 1-옥실 프리 라디칼, 페노싸이아진, 페녹사진, 1,1-다이페닐-2-피크릴하이드라질, 다이뷰틸다이싸이오카바네이트 구리(II), 나이트로벤젠, N-나이트로소-N-페닐하이드록실아민알루미늄염, N-나이트로소-N-페닐하이드록실아민암모늄염 등이 적합하게 이용된다. 또, 일본 공개특허공보 2015-127817호의 단락 0060에 기재된 중합 금지제, 및, 국제 공개공보 제2015/125469호의 단락 0031~0046에 기재된 화합물을 이용할 수도 있으며, 이 내용은 본 명세서에 원용된다.Specific compounds of the polymerization inhibitor include p-hydroquinone, o-hydroquinone, o-methoxyphenol, p-methoxyphenol, di-tert-butyl-p-cresol, pyrogallol, and p-tert-butylcateta Col, 1,4-benzoquinone, diphenyl-p-benzoquinone, 4,4'-thiobis(3-methyl-6-tert-butylphenol), 2,2'-methylenebis(4-methyl-6 -tert-butylphenol), N-nitrosophenylhydroxyamine cerium salt, N-nitroso-N-phenylhydroxyamine aluminum salt, N-nitrosodiphenylamine, N-phenylnaphthylamine , ethylenediamine tetraacetic acid, 1,2-cyclohexanediamine tetraacetic acid, glycoletherdiamine tetraacetic acid, 2,6-di-tert-butyl-4-methylphenol, 5-nitroso-8 -Hydroxyquinoline, 1-nitroso-2-naphthol, 2-nitroso-1-naphthol, 2-nitroso-5-(N-ethyl-N-sulfopropylamino)phenol, N-nitro Bovine-N-(1-naphthyl)hydroxyamineammonium salt, bis(4-hydroxy-3,5-tert-butyl)phenylmethane, 1,3,5-tris(4-t-butyl-3- Hydroxy-2,6-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, 4-hydroxy-2,2,6,6 -Tetramethylpiperidine 1-oxyl free radical, 2,2,6,6-tetramethylpiperidine 1-oxyl free radical, phenothiazine, phenoxazine, 1,1-diphenyl-2-picrylhyd Razil, dibutyldithiocarbanate copper (II), nitrobenzene, N-nitroso-N-phenylhydroxylamine aluminum salt, N-nitroso-N-phenylhydroxylamine ammonium salt and the like are suitably used. used Moreover, the polymerization inhibitor of Unexamined-Japanese-Patent No. 2015-127817, Paragraph 0060, and Paragraph 0031 of International Publication No. 2015/125469 - the compound of 0046 can also be used, The content is integrated in this specification.
본 발명의 수지 조성물이 중합 금지제를 갖는 경우, 중합 금지제의 함유량은, 본 발명의 수지 조성물의 전고형분에 대하여, 0.01~20질량%인 것이 바람직하고, 0.02~15질량%인 것이 보다 바람직하며, 0.05~10질량%인 것이 더 바람직하다.When the resin composition of the present invention has a polymerization inhibitor, the content of the polymerization inhibitor is preferably 0.01 to 20% by mass, and more preferably 0.02 to 15% by mass with respect to the total solid content of the resin composition of the present invention. And, it is more preferable that it is 0.05 to 10% by mass.
중합 금지제는 1종만이어도 되고, 2종 이상이어도 된다. 중합 금지제가 2종 이상인 경우는, 그 합계가 상기 범위인 것이 바람직하다.1 type of polymerization inhibitor may be sufficient as it, and 2 or more types may be sufficient as it. When there are 2 or more types of polymerization inhibitors, it is preferable that the sum total is the said range.
<그 외의 첨가제><Other additives>
본 발명의 수지 조성물은, 본 발명의 효과가 얻어지는 범위에서, 필요에 따라, 각종 첨가물, 예를 들면, 계면활성제, 고급 지방산 유도체, 무기 입자, 자외선 흡수제, 유기 타이타늄 화합물, 산화 방지제, 응집 방지제, 페놀계 화합물, 다른 고분자 화합물, 가소제 및 그 외의 조제류(예를 들면, 소포제, 난연제 등) 등을 배합할 수 있다. 이들 성분을 적절히 함유시킴으로써, 막 물성 등의 성질을 조정할 수 있다. 이들 성분은, 예를 들면, 일본 공개특허공보 2012-003225호의 단락 번호 0183 이후(대응하는 미국 특허출원 공개공보 제2013/0034812호의 단락 번호 0237)의 기재, 일본 공개특허공보 2008-250074호의 단락 번호 0101~0104, 0107~0109 등의 기재를 참조할 수 있으며, 이들 내용은 본 명세서에 원용된다. 이들 첨가제를 배합하는 경우, 그 합계 배합량은 본 발명의 수지 조성물의 고형분의 3질량% 이하로 하는 것이 바람직하다.The resin composition of the present invention may contain, as necessary, various additives such as surfactants, higher fatty acid derivatives, inorganic particles, ultraviolet absorbers, organic titanium compounds, antioxidants, anti-aggregation agents, Phenol-based compounds, other high molecular compounds, plasticizers, and other auxiliary agents (eg, antifoaming agents, flame retardants, etc.) can be blended. By appropriately containing these components, properties such as membrane properties can be adjusted. These components are, for example, described in paragraph No. 0183 of Japanese Laid-open Patent Publication No. 2012-003225 (paragraph No. 0237 of corresponding US Patent Application Publication No. 2013/0034812), paragraph No. 2008-250074 Reference can be made to descriptions of 0101 to 0104 and 0107 to 0109, the contents of which are incorporated herein by reference. When blending these additives, the total compounding amount is preferably 3% by mass or less of the solid content of the resin composition of the present invention.
〔계면활성제〕〔Surfactants〕
계면활성제로서는, 불소계 계면활성제, 실리콘계 계면활성제, 탄화 수소계 계면활성제 등의 각종 계면활성제를 사용할 수 있다. 계면활성제는 비이온형 계면활성제여도 되고, 양이온형 계면활성제여도 되며, 음이온형 계면활성제여도 된다.As surfactant, various surfactants, such as a fluorochemical surfactant, a silicone type surfactant, and a hydrocarbon type surfactant, can be used. The surfactant may be a nonionic surfactant, a cationic surfactant, or an anionic surfactant.
본 발명의 감광성 수지 조성물에 계면활성제를 함유시킴으로써, 도포액으로서 조제했을 때의 액 특성(특히, 유동성)이 보다 향상되어, 도포 두께의 균일성이나 액 절감성을 보다 개선시킬 수 있다. 즉, 계면활성제를 함유하는 조성물을 적용한 도포액을 이용하여 막 형성하는 경우에 있어서는, 피도포면과 도포액의 계면 장력이 저하되어, 피도포면에 대한 젖음성이 개선되고, 피도포면에 대한 도포성이 향상된다. 이 때문에, 두께 불균일이 작은 균일 두께의 막 형성을 보다 적합하게 행할 수 있다.By incorporating a surfactant into the photosensitive resin composition of the present invention, the liquid properties (particularly, fluidity) when prepared as a coating liquid are further improved, and the uniformity of the coating thickness and the liquid saving property can be further improved. That is, in the case of forming a film using a coating liquid to which a composition containing a surfactant is applied, the interfacial tension between the surface to be coated and the coating liquid is lowered, the wettability to the surface to be coated is improved, and the applicability to the surface to be coated is reduced. It improves. For this reason, it is possible to more suitably form a film having a uniform thickness with little thickness unevenness.
불소계 계면활성제로서는, 예를 들면, 메가팍 F171, 동 F172, 동 F173, 동 F176, 동 F177, 동 F141, 동 F142, 동 F143, 동 F144, 동 R30, 동 F437, 동 F475, 동 F479, 동 F482, 동 F554, 동 F780, RS-72-K(이상, DIC(주)제), 플루오라드 FC430, 동 FC431, 동 FC171, 노벡 FC4430, 동 FC4432(이상, 3M 재팬(주)제), 서프론 S-382, 동 SC-101, 동 SC-103, 동 SC-104, 동 SC-105, 동 SC-1068, 동 SC-381, 동 SC-383, 동 S-393, 동 KH-40(이상, 아사히 글라스(주)제), PF636, PF656, PF6320, PF6520, PF7002(OMNOVA사제) 등을 들 수 있다. 불소계 계면활성제는, 일본 공개특허공보 2015-117327호의 단락 0015~0158에 기재된 화합물, 일본 공개특허공보 2011-132503호의 단락 0117~0132에 기재된 화합물을 사용할 수도 있으며, 이들의 내용은 본 명세서에 원용된다. 불소계 계면활성제로서 블록 폴리머를 이용할 수도 있고, 구체예로서는, 예를 들면 일본 공개특허공보 2011-89090호에 기재된 화합물을 들 수 있으며, 이들 내용은 본 명세서에 원용된다.Examples of the fluorine-based surfactant include Megafac F171, F172, F173, F176, F177, F141, F142, F143, F144, R30, F437, F475, F479, and F143. F482, F554, F780, RS-72-K (above, manufactured by DIC Co., Ltd.), Fluorad FC430, copper FC431, copper FC171, Novec FC4430, copper FC4432 (above, manufactured by 3M Japan Co., Ltd.), West Front S-382, East SC-101, East SC-103, East SC-104, East SC-105, East SC-1068, East SC-381, East SC-383, East S-393, East KH-40 ( As mentioned above, Asahi Glass Co., Ltd. product), PF636, PF656, PF6320, PF6520, PF7002 (made by OMNOVA), etc. are mentioned. The compound described in Paragraph 0015 of Unexamined-Japanese-Patent No. 2015-117327 - 0158, and Paragraph 0117 of Unexamined-Japanese-Patent No. 2011-132503 - the compound of 0132 can also be used for a fluorochemical surfactant, The content of these is integrated in this specification. . A block polymer can also be used as a fluorochemical surfactant, and as a specific example, the compound of Unexamined-Japanese-Patent No. 2011-89090 is mentioned, for example, These content is integrated in this specification.
불소계 계면활성제는, 불소 원자를 갖는 (메트)아크릴레이트 화합물에서 유래하는 반복 단위와, 알킬렌옥시기(바람직하게는 에틸렌옥시기, 프로필렌옥시기)를 2 이상(바람직하게는 5 이상) 갖는 (메트)아크릴레이트 화합물에서 유래하는 반복 단위를 포함하는 함불소 고분자 화합물도 바람직하게 이용할 수 있으며, 하기 화합물도 본 발명에서 이용되는 불소계 계면활성제로서 예시된다.The fluorine-based surfactant is a (meth)acrylate compound having 2 or more (preferably 5 or more) repeating units derived from a (meth)acrylate compound having a fluorine atom and an alkyleneoxy group (preferably an ethyleneoxy group and a propyleneoxy group). ) A fluorine-containing high molecular compound containing a repeating unit derived from an acrylate compound can also be preferably used, and the following compounds are also exemplified as fluorine-based surfactants used in the present invention.
[화학식 53][Formula 53]
상기의 화합물의 중량 평균 분자량은, 바람직하게는 3,000~50,000이고, 5,000~30,000인 것이 보다 바람직하다.The weight average molecular weight of the above compound is preferably 3,000 to 50,000, and more preferably 5,000 to 30,000.
불소계 계면활성제는, 에틸렌성 불포화기를 측쇄에 갖는 함불소 중합체를 불소계 계면활성제로서 이용할 수도 있다. 구체예로서는, 일본 공개특허공보 2010-164965호의 단락 0050~0090 및 단락 0289~0295에 기재된 화합물을 들 수 있으며, 이 내용은 본 명세서에 원용된다. 또, 시판품으로서는, 예를 들면 DIC(주)제의 메가팍 RS-101, RS-102, RS-718K 등을 들 수 있다.As the fluorochemical surfactant, a fluoropolymer having an ethylenically unsaturated group in the side chain may be used as the fluorochemical surfactant. As a specific example, Paragraph 0050 of Unexamined-Japanese-Patent No. 2010-164965 - 0090 and Paragraph 0289 - the compound of 0295 are mentioned, This content is integrated in this specification. Moreover, as a commercial item, DIC Corporation Megafac RS-101, RS-102, RS-718K etc. are mentioned, for example.
불소계 계면활성제 중의 불소 함유율은, 3~40질량%가 적합하고, 보다 바람직하게는 5~30질량%이며, 특히 바람직하게는 7~25질량%이다. 불소 함유율이 이 범위 내인 불소계 계면활성제는, 도포막의 두께의 균일성이나 액 절감성의 점에서 효과적이며, 조성물 중에 있어서의 용해성도 양호하다.The fluorine content in the fluorine-based surfactant is preferably 3 to 40% by mass, more preferably 5 to 30% by mass, and particularly preferably 7 to 25% by mass. A fluorine-based surfactant having a fluorine content within this range is effective in terms of the uniformity of the thickness of the coating film and liquid saving, and has good solubility in the composition.
실리콘계 계면활성제로서는, 예를 들면, 도레이 실리콘 DC3PA, 도레이 실리콘 SH7PA, 도레이 실리콘 DC11PA, 도레이 실리콘 SH21PA, 도레이 실리콘 SH28PA, 도레이 실리콘 SH29PA, 도레이 실리콘 SH30PA, 도레이 실리콘 SH8400(이상, 도레이·다우코닝(주)제), TSF-4440, TSF-4300, TSF-4445, TSF-4460, TSF-4452(이상, 모멘티브·퍼포먼스·머티리얼즈사제), KP341, KF6001, KF6002(이상, 신에쓰 실리콘(주)제), BYK307, BYK323, BYK330(이상, 빅케미(주)제) 등을 들 수 있다.As the silicone surfactant, for example, Toray Silicone DC3PA, Toray Silicone SH7PA, Toray Silicone DC11PA, Toray Silicone SH21PA, Toray Silicone SH28PA, Toray Silicone SH29PA, Toray Silicone SH30PA, Toray Silicone SH8400 (above, Toray Dow Corning Co., Ltd.) product), TSF-4440, TSF-4300, TSF-4445, TSF-4460, TSF-4452 (above, manufactured by Momentive Performance Materials Co., Ltd.), KP341, KF6001, KF6002 (above, manufactured by Shin-Etsu Silicone Co., Ltd.) ), BYK307, BYK323, BYK330 (above, manufactured by Big Chemie Co., Ltd.), and the like.
탄화 수소계 계면활성제로서는, 예를 들면, 파이오닌 A-76, 뉴카르겐 FS-3PG, 파이오닌 B-709, 파이오닌 B-811-N, 파이오닌 D-1004, 파이오닌 D-3104, 파이오닌 D-3605, 파이오닌 D-6112, 파이오닌 D-2104-D, 파이오닌 D-212, 파이오닌 D-931, 파이오닌 D-941, 파이오닌 D-951, 파이오닌 E-5310, 파이오닌 P-1050-B, 파이오닌 P-1028-P, 파이오닌 P-4050-T(이상, 다케모토 유시사제) 등을 들 수 있다.Examples of hydrocarbon surfactants include Pionin A-76, New Cargen FS-3PG, Pionin B-709, Pionin B-811-N, Pionin D-1004, Pionin D-3104, Pionin D-3605, Pionin D-6112, Pionin D-2104-D, Pionin D-212, Pionin D-931, Pionin D-941, Pionin D-951, Pionin E-5310, Pionin P-1050-B, Pionin P-1028-P, Pionin P-4050-T (above, Takemoto Yushi Co., Ltd.), etc. are mentioned.
비이온형 계면활성제로서는, 글리세롤, 트라이메틸올프로페인, 트라이메틸올에테인 및 그들의 에톡실레이트 및 프로폭실레이트(예를 들면, 글리세롤프로폭실레이트, 글리세롤에톡실레이트 등), 폴리옥시에틸렌라우릴에터, 폴리옥시에틸렌스테아릴에터, 폴리옥시에틸렌올레일에터, 폴리옥시에틸렌옥틸페닐에터, 폴리옥시에틸렌노닐페닐에터, 폴리에틸렌글라이콜다이라우레이트, 폴리에틸렌글라이콜다이스테아레이트, 소비탄 지방산 에스터 등이 예시된다. 시판품으로서는, 플루로닉(등록 상표) L10, L31, L61, L62, 10R5, 17R2, 25R2(BASF사제), 테트로닉 304, 701, 704, 901, 904, 150R1(BASF사제), 솔스퍼스 20000(니혼 루브리졸(주)제), NCW-101, NCW-1001, NCW-1002(와코 준야쿠 고교(주)제), 파이오닌 D-6112, D-6112-W, D-6315(다케모토 유시(주)제), 올핀 E1010, 서피놀 104, 400, 440(닛신 가가쿠 고교(주)제) 등을 들 수 있다.Examples of nonionic surfactants include glycerol, trimethylolpropane, trimethylolethane and their ethoxylates and propoxylates (for example, glycerol propoxylate and glycerol ethoxylate), polyoxyethylene lauryl Ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate , sorbitan fatty acid ester, etc. are exemplified. As commercially available products, Pluronic (registered trademark) L10, L31, L61, L62, 10R5, 17R2, 25R2 (manufactured by BASF), Tetronic 304, 701, 704, 901, 904, 150R1 (manufactured by BASF), Solsperse 20000 ( Nippon Lubrizol Co., Ltd.), NCW-101, NCW-1001, NCW-1002 (made by Wako Junyaku Kogyo Co., Ltd.), Pionein D-6112, D-6112-W, D-6315 (Yushi Takemoto) Co., Ltd.), Olfin E1010, Surfynol 104, 400, 440 (Nisshin Chemical Co., Ltd. product), etc. are mentioned.
양이온형 계면활성제로서 구체적으로는, 오가노실록세인 폴리머 KP341(신에쓰 가가쿠 고교(주)제), (메트)아크릴산계 (공)중합체 폴리플로 No. 75, No. 77, No. 90, No. 95(교에이샤 가가쿠(주)제), W001(유쇼(주)제) 등을 들 수 있다.As the cationic surfactant, specifically, organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Industry Co., Ltd.), (meth)acrylic acid-based (co)polymer Polyflow No. 75, no. 77, no. 90, no. 95 (made by Kyoeisha Chemical Co., Ltd.), W001 (made by Yusho Co., Ltd.), etc. are mentioned.
음이온형 계면활성제로서 구체적으로는, W004, W005, W017(유쇼(주)제), 산뎃 BL(산요 가세이(주)제) 등을 들 수 있다.Specifically as anionic surfactant, W004, W005, W017 (made by Yusho Co., Ltd.), Sandet BL (made by Sanyo Kasei Co., Ltd.), etc. are mentioned.
계면활성제는, 1종만을 이용해도 되고, 2종류 이상을 조합해도 된다.Surfactant may use only 1 type, and may combine 2 or more types.
계면활성제의 함유량은, 조성물의 전고형분에 대하여, 0.001~2.0질량%가 바람직하고, 0.005~1.0질량%가 보다 바람직하다.The content of the surfactant is preferably 0.001 to 2.0% by mass, and more preferably 0.005 to 1.0% by mass, based on the total solid content of the composition.
〔고급 지방산 유도체〕[Higher Fatty Acid Derivatives]
본 발명의 수지 조성물은, 산소에 기인하는 중합 저해를 방지하기 위하여, 베헨산이나 베헨산 아마이드와 같은 고급 지방산 유도체를 첨가하여, 도포 후의 건조의 과정에서 본 발명의 수지 조성물의 표면에 편재시켜도 된다.To the resin composition of the present invention, in order to prevent inhibition of polymerization due to oxygen, a higher fatty acid derivative such as behenic acid or behenic acid amide may be added and unevenly distributed on the surface of the resin composition of the present invention during drying after application. .
또, 고급 지방산 유도체는, 국제 공개공보 제2015/199219호의 단락 0155에 기재된 화합물을 이용할 수도 있으며, 이 내용은 본 명세서에 원용된다.Moreover, as a higher fatty acid derivative, the compound of Paragraph 0155 of International Publication No. 2015/199219 can also be used, and this content is integrated in this specification.
본 발명의 수지 조성물이 고급 지방산 유도체를 갖는 경우, 고급 지방산 유도체의 함유량은, 본 발명의 수지 조성물의 전고형분에 대하여, 0.1~10질량%인 것이 바람직하다. 고급 지방산 유도체는 1종만이어도 되고, 2종 이상이어도 된다. 고급 지방산 유도체가 2종 이상인 경우는, 그 합계가 상기 범위인 것이 바람직하다.When the resin composition of the present invention has a higher fatty acid derivative, the content of the higher fatty acid derivative is preferably 0.1 to 10% by mass with respect to the total solid content of the resin composition of the present invention. 1 type of higher fatty acid derivative may be sufficient as it, and 2 or more types may be sufficient as it. When two or more types of higher fatty acid derivatives are used, it is preferable that the total is within the above range.
〔무기 입자〕[Inorganic Particles]
본 발명의 수지 조성물은, 무기 미립자를 포함해도 된다. 무기 입자로서, 구체적으로는, 탄산 칼슘, 인산 칼슘, 실리카, 카올린, 탤크, 이산화 타이타늄, 알루미나, 황산 바륨, 불화 칼슘, 불화 리튬, 제올라이트, 황화 몰리브데넘, 유리 등을 포함할 수 있다.The resin composition of the present invention may also contain inorganic fine particles. Specific examples of inorganic particles include calcium carbonate, calcium phosphate, silica, kaolin, talc, titanium dioxide, alumina, barium sulfate, calcium fluoride, lithium fluoride, zeolite, molybdenum sulfide, glass and the like.
상기 무기 입자의 평균 입자경으로서는, 0.01~2.0μm가 바람직하고, 0.02~1.5μm가 보다 바람직하며, 0.03~1.0μm가 더 바람직하고, 0.04~0.5μm가 특히 바람직하다.The average particle diameter of the inorganic particles is preferably 0.01 to 2.0 μm, more preferably 0.02 to 1.5 μm, still more preferably 0.03 to 1.0 μm, and particularly preferably 0.04 to 0.5 μm.
미립자의 상기 평균 입자경은, 1차 입자경이며, 또 체적 평균 입자경이다. 체적 평균 입자경은, Nanotrac WAVE II EX-150(닛키소사제)에 의한 동적 광산란법으로 측정할 수 있다.The average particle diameter of the fine particles is a primary particle diameter and is also a volume average particle diameter. The volume average particle size can be measured by a dynamic light scattering method using Nanotrac WAVE II EX-150 (manufactured by Nikkiso Co., Ltd.).
상기 측정이 곤란한 경우는, 원심 침강 광투과법, X선 투과법, 레이저 회절·산란법으로 측정할 수도 있다.When the above measurement is difficult, it can also be measured by a centrifugal sedimentation light transmission method, an X-ray transmission method, or a laser diffraction/scattering method.
〔자외선 흡수제〕[Ultraviolet rays absorber]
본 발명의 조성물은, 자외선 흡수제를 포함하고 있어도 된다. 자외선 흡수제로서는, 살리실레이트계, 벤조페논계, 벤조트라이아졸계, 치환 아크릴로나이트릴계, 트라이아진계 등의 자외선 흡수제를 사용할 수 있다.The composition of the present invention may contain a ultraviolet absorber. As the ultraviolet absorber, ultraviolet absorbers such as salicylate type, benzophenone type, benzotriazole type, substituted acrylonitrile type, and triazine type can be used.
살리실레이트계 자외선 흡수제의 예로서는, 페닐살리실레이트, p-옥틸페닐살리실레이트, p-t-뷰틸페닐살리실레이트 등을 들 수 있으며, 벤조페논계 자외선 흡수제의 예로서는, 2,2'-다이하이드록시-4-메톡시벤조페논, 2,2'-다이하이드록시-4,4'-다이메톡시벤조페논, 2,2',4,4'-테트라하이드록시벤조페논, 2-하이드록시-4-메톡시벤조페논, 2,4-다이하이드록시벤조페논, 2-하이드록시-4-옥톡시벤조페논 등을 들 수 있다. 또, 벤조트라이아졸계 자외선 흡수제의 예로서는, 2-(2'-하이드록시-3',5'-다이-tert-뷰틸페닐)-5-클로로벤조트라이아졸, 2-(2'-하이드록시-3'-tert-뷰틸-5'-메틸페닐)-5-클로로벤조트라이아졸, 2-(2'-하이드록시-3'-tert-아밀-5'-아이소뷰틸페닐)-5-클로로벤조트라이아졸, 2-(2'-하이드록시-3'-아이소뷰틸-5'-메틸페닐)-5-클로로벤조트라이아졸, 2-(2'-하이드록시-3'-아이소뷰틸-5'-프로필페닐)-5-클로로벤조트라이아졸, 2-(2'-하이드록시-3',5'-다이-tert-뷰틸페닐)벤조트라이아졸, 2-(2'-하이드록시-5'-메틸페닐)벤조트라이아졸, 2-[2'-하이드록시-5'-(1,1,3,3-테트라메틸)페닐]벤조트라이아졸 등을 들 수 있다.Examples of salicylate-based ultraviolet absorbers include phenyl salicylate, p-octylphenyl salicylate, and p-t-butylphenyl salicylate. Examples of benzophenone-based ultraviolet absorbers include 2,2'-dihydride Roxy-4-methoxybenzophenone, 2,2'-dihydroxy-4,4'-dimethoxybenzophenone, 2,2',4,4'-tetrahydroxybenzophenone, 2-hydroxy- 4-methoxy benzophenone, 2,4-dihydroxy benzophenone, 2-hydroxy-4-octoxy benzophenone, etc. are mentioned. In addition, examples of benzotriazole-based ultraviolet absorbers include 2-(2'-hydroxy-3',5'-di-tert-butylphenyl)-5-chlorobenzotriazole, 2-(2'-hydroxy- 3'-tert-butyl-5'-methylphenyl)-5-chlorobenzotriazole, 2-(2'-hydroxy-3'-tert-amyl-5'-isobutylphenyl)-5-chlorobenzotriazole , 2-(2'-hydroxy-3'-isobutyl-5'-methylphenyl)-5-chlorobenzotriazole, 2-(2'-hydroxy-3'-isobutyl-5'-propylphenyl) -5-chlorobenzotriazole, 2-(2'-hydroxy-3',5'-di-tert-butylphenyl)benzotriazole, 2-(2'-hydroxy-5'-methylphenyl)benzotriazole azoles, 2-[2'-hydroxy-5'-(1,1,3,3-tetramethyl)phenyl]benzotriazole, and the like.
치환 아크릴로나이트릴계 자외선 흡수제의 예로서는, 2-사이아노-3,3-다이페닐아크릴산 에틸, 2-사이아노-3,3-다이페닐아크릴산 2-에틸헥실 등을 들 수 있다. 또한, 트라이아진계 자외선 흡수제의 예로서는, 2-[4-[(2-하이드록시-3-도데실옥시프로필)옥시]-2-하이드록시페닐]-4,6-비스(2,4-다이메틸페닐)-1,3,5-트라이아진, 2-[4-[(2-하이드록시-3-트라이데실옥시프로필)옥시]-2-하이드록시페닐]-4,6-비스(2,4-다이메틸페닐)-1,3,5-트라이아진, 2-(2,4-다이하이드록시페닐)-4,6-비스(2,4-다이메틸페닐)-1,3,5-트라이아진 등의 모노(하이드록시페닐)트라이아진 화합물; 2,4-비스(2-하이드록시-4-프로필옥시페닐)-6-(2,4-다이메틸페닐)-1,3,5-트라이아진, 2,4-비스(2-하이드록시-3-메틸-4-프로필옥시페닐)-6-(4-메틸페닐)-1,3,5-트라이아진, 2,4-비스(2-하이드록시-3-메틸-4-헥실옥시페닐)-6-(2,4-다이메틸페닐)-1,3,5-트라이아진 등의 비스(하이드록시페닐)트라이아진 화합물; 2,4-비스(2-하이드록시-4-뷰톡시페닐)-6-(2,4-다이뷰톡시페닐)-1,3,5-트라이아진, 2,4,6-트리스(2-하이드록시-4-옥틸옥시페닐)-1,3,5-트라이아진, 2,4,6-트리스[2-하이드록시-4-(3-뷰톡시-2-하이드록시프로필옥시)페닐]-1,3,5-트라이아진 등의 트리스(하이드록시페닐)트라이아진 화합물 등을 들 수 있다.Examples of the substituted acrylonitrile-based ultraviolet absorber include ethyl 2-cyano-3,3-diphenyl acrylate, 2-ethylhexyl 2-cyano-3,3-diphenyl acrylate and the like. Further, as an example of the triazine-based ultraviolet absorber, 2-[4-[(2-hydroxy-3-dodecyloxypropyl)oxy]-2-hydroxyphenyl]-4,6-bis(2,4-di Methylphenyl) -1,3,5-triazine, 2-[4-[(2-hydroxy-3-tridecyloxypropyl)oxy]-2-hydroxyphenyl]-4,6-bis(2,4 -Dimethylphenyl)-1,3,5-triazine, 2-(2,4-dihydroxyphenyl)-4,6-bis(2,4-dimethylphenyl)-1,3,5-triazine, etc. Mono (hydroxyphenyl) triazine compounds of; 2,4-bis(2-hydroxy-4-propyloxyphenyl)-6-(2,4-dimethylphenyl)-1,3,5-triazine, 2,4-bis(2-hydroxy-3 -Methyl-4-propyloxyphenyl)-6-(4-methylphenyl)-1,3,5-triazine, 2,4-bis(2-hydroxy-3-methyl-4-hexyloxyphenyl)-6 bis(hydroxyphenyl)triazine compounds such as -(2,4-dimethylphenyl)-1,3,5-triazine; 2,4-bis(2-hydroxy-4-butoxyphenyl)-6-(2,4-dibutoxyphenyl)-1,3,5-triazine, 2,4,6-tris(2- Hydroxy-4-octyloxyphenyl)-1,3,5-triazine, 2,4,6-tris[2-hydroxy-4-(3-butoxy-2-hydroxypropyloxy)phenyl]- and tris(hydroxyphenyl)triazine compounds such as 1,3,5-triazine.
본 발명에 있어서는, 상기 각종 자외선 흡수제는 1종을 단독으로 이용해도 되고, 2종 이상을 조합하여 이용해도 된다.In this invention, the said various ultraviolet absorbers may be used individually by 1 type, and may be used in combination of 2 or more types.
본 발명의 조성물은, 자외선 흡수제를 포함해도 되고 포함하지 않아도 되지만, 포함하는 경우, 자외선 흡수제의 함유량은, 본 발명의 조성물의 전고형분 질량에 대하여, 0.001질량% 이상 1질량% 이하인 것이 바람직하고, 0.01질량% 이상 0.1질량% 이하인 것이 보다 바람직하다.The composition of the present invention may or may not contain a ultraviolet absorber, but when it is included, the content of the ultraviolet absorber is preferably 0.001% by mass or more and 1% by mass or less with respect to the total solid mass of the composition of the present invention, It is more preferable that it is 0.01 mass % or more and 0.1 mass % or less.
〔유기 타이타늄 화합물〕[organic titanium compound]
본 실시형태의 수지 조성물은, 유기 타이타늄 화합물을 함유해도 된다. 수지 조성물이 유기 타이타늄 화합물을 함유함으로써, 저온에서 경화한 경우이더라도 내약품성이 우수한 수지층을 형성할 수 있다.The resin composition of the present embodiment may contain an organic titanium compound. By containing the organic titanium compound in the resin composition, a resin layer having excellent chemical resistance can be formed even when cured at a low temperature.
사용 가능한 유기 타이타늄 화합물로서는, 타이타늄 원자에 유기기가 공유 결합 또는 이온 결합을 통하여 결합되어 있는 것을 들 수 있다.Examples of usable organic titanium compounds include those in which an organic group is bonded to a titanium atom through a covalent bond or an ionic bond.
유기 타이타늄 화합물의 구체예를, 이하의 I)~VII)에 나타낸다:Specific examples of organic titanium compounds are shown in I) to VII) below:
I) 타이타늄킬레이트 화합물: 그중에서도, 수지 조성물의 보존 안정성이 양호하고, 양호한 경화 패턴이 얻어지는 점에서, 알콕시기를 2개 이상 갖는 타이타늄킬레이트 화합물이 보다 바람직하다. 구체적인 예는, 타이타늄비스(트라이에탄올아민)다이아이소프로폭사이드, 타이타늄다이(n-뷰톡사이드)비스(2,4-펜테인다이오네이트), 타이타늄다이아이소프로폭사이드비스(2,4-펜테인다이오네이트), 타이타늄다이아이소프로폭사이드비스(테트라메틸헵테인다이오네이트), 타이타늄다이아이소프로폭사이드비스(에틸아세토아세테이트) 등이다.I) Titanium chelate compound: Especially, the titanium chelate compound which has 2 or more alkoxy groups is more preferable at the point from which the storage stability of a resin composition is favorable and a favorable curing pattern is obtained. Specific examples include titanium bis(triethanolamine) diisopropoxide, titanium di(n-butoxide)bis(2,4-pentanedionate), titanium diisopropoxide bis(2,4-phen theindionate), titanium diisopropoxide bis(tetramethylheptanedionate), titanium diisopropoxide bis(ethylacetoacetate), and the like.
II) 테트라알콕시타이타늄 화합물: 예를 들면, 타이타늄테트라(n-뷰톡사이드), 타이타늄테트라에톡사이드, 타이타늄테트라(2-에틸헥소옥사이드), 타이타늄테트라아이소뷰톡사이드, 타이타늄테트라아이소프로폭사이드, 타이타늄테트라메톡사이드, 타이타늄테트라메톡시프로폭사이드, 타이타늄테트라메틸페녹사이드, 타이타늄테트라(n-노닐옥사이드), 타이타늄테트라(n-프로폭사이드), 타이타늄테트라스테아릴옥사이드, 타이타늄테트라키스[비스{2,2-(알릴옥시메틸)뷰톡사이드}] 등이다.II) Tetraalkoxytitanium compounds: For example, titanium tetra(n-butoxide), titanium tetraethoxide, titanium tetra(2-ethylhexoxide), titanium tetraisobutoxide, titanium tetraisopropoxide, titanium Tetramethoxide, titanium tetramethoxypropoxide, titanium tetramethylphenoxide, titanium tetra(n-nonyloxide), titanium tetra(n-propoxide), titanium tetrastearyl oxide, titanium tetrakis[bis{2] ,2-(allyloxymethyl)butoxide}] and the like.
III) 타이타노센 화합물: 예를 들면, 펜타메틸사이클로펜타다이엔일타이타늄트라이메톡사이드, 비스(η5-2,4-사이클로펜타다이엔-1-일)비스(2,6-다이플루오로페닐)타이타늄, 비스(η5-2,4-사이클로펜타다이엔-1-일)비스(2,6-다이플루오로-3-(1H-피롤-1-일)페닐)타이타늄 등이다.III) titanocene compounds: eg pentamethylcyclopentadienyltitanium trimethoxide, bis(η5-2,4-cyclopentadien-1-yl)bis(2,6-difluorophenyl ) titanium, bis(η5-2,4-cyclopentadien-1-yl)bis(2,6-difluoro-3-(1H-pyrrol-1-yl)phenyl)titanium, and the like.
IV) 모노알콕시타이타늄 화합물: 예를 들면, 타이타늄트리스(다이옥틸포스페이트)아이소프로폭사이드, 타이타늄트리스(도데실벤젠설포네이트)아이소프로폭사이드 등이다.IV) Monoalkoxy titanium compounds: For example, titanium tris (dioctyl phosphate) isopropoxide, titanium tris (dodecylbenzenesulfonate) isopropoxide and the like.
V) 타이타늄옥사이드 화합물: 예를 들면, 타이타늄옥사이드비스(펜테인다이오네이트), 타이타늄옥사이드비스(테트라메틸헵테인다이오네이트), 프탈로사이아닌타이타늄옥사이드 등이다.V) Titanium oxide compounds: For example, titanium oxide bis(pentanedionate), titanium oxide bis(tetramethylheptanedionate), phthalocyanine titanium oxide and the like.
VI) 타이타늄테트라아세틸아세토네이트 화합물: 예를 들면, 타이타늄테트라아세틸아세토네이트 등이다.VI) Titanium tetraacetylacetonate compounds: For example, titanium tetraacetylacetonate and the like.
VII) 타이타네이트 커플링제: 예를 들면, 아이소프로필트라이도데실벤젠설폰일타이타네이트 등이다.VII) Titanate coupling agent: For example, isopropyl tridodecylbenzenesulfonyl titanate and the like.
그중에서도, 유기 타이타늄 화합물로서는, 상기 I) 타이타늄킬레이트 화합물, II) 테트라알콕시타이타늄 화합물, 및 III) 타이타노센 화합물로 이루어지는 군으로부터 선택되는 적어도 1종의 화합물인 것이, 보다 양호한 내약품성을 나타낸다는 관점에서 바람직하다. 특히, 타이타늄다이아이소프로폭사이드비스(에틸아세토아세테이트), 타이타늄테트라(n-뷰톡사이드), 및 비스(η5-2,4-사이클로펜타다이엔-1-일)비스(2,6-다이플루오로-3-(1H-피롤-1-일)페닐)타이타늄이 바람직하다.Among them, the viewpoint that the organic titanium compound is at least one compound selected from the group consisting of the above-mentioned I) titanium chelate compound, II) tetraalkoxytitanium compound, and III) titanocene compound, which exhibits better chemical resistance. preferred in In particular, titanium diisopropoxide bis(ethylacetoacetate), titanium tetra(n-butoxide), and bis(η5-2,4-cyclopentadien-1-yl)bis(2,6-difluoro Rho-3-(1H-pyrrol-1-yl)phenyl)titanium is preferred.
유기 타이타늄 화합물을 배합하는 경우, 그 배합량은, 특정 수지 100질량부에 대하여, 0.05~10질량부인 것이 바람직하고, 보다 바람직하게는 0.1~2질량부이다. 배합량이 0.05질량부 이상인 경우, 얻어지는 경화 패턴에 양호한 내열성 및 내약품성이 보다 효과적으로 발현되고, 한편 10질량부 이하인 경우, 조성물의 보존 안정성이 보다 우수하다.When blending an organic titanium compound, the compounding amount is preferably 0.05 to 10 parts by mass, more preferably 0.1 to 2 parts by mass, based on 100 parts by mass of the specific resin. When the compounding amount is 0.05 parts by mass or more, favorable heat resistance and chemical resistance are more effectively expressed in the resulting cured pattern, while when it is 10 parts by mass or less, the storage stability of the composition is more excellent.
〔산화 방지제〕[Antioxidant]
본 발명의 조성물은, 산화 방지제를 포함하고 있어도 된다. 첨가제로서 산화 방지제를 함유함으로써, 경화 후의 막의 신도 특성이나, 금속 재료와의 밀착성을 향상시킬 수 있다. 산화 방지제로서는, 페놀 화합물, 아인산 에스터 화합물, 싸이오에터 화합물 등을 들 수 있다. 페놀 화합물로서는, 페놀계 산화 방지제로서 알려진 임의의 페놀 화합물을 사용할 수 있다. 바람직한 페놀 화합물로서는, 힌더드 페놀 화합물을 들 수 있다. 페놀성 하이드록시기에 인접하는 부위(오쏘위)에 치환기를 갖는 화합물이 바람직하다. 상술한 치환기로서는 탄소수 1~22의 치환 또는 무치환의 알킬기가 바람직하다. 또, 산화 방지제는, 동일 분자 내에 페놀기와 아인산 에스터기를 갖는 화합물도 바람직하다. 또, 산화 방지제는, 인계 산화 방지제도 적합하게 사용할 수 있다. 인계 산화 방지제로서는 트리스[2-[[2,4,8,10-테트라키스(1,1-다이메틸에틸)다이벤조[d,f][1,3,2]다이옥사포스페핀-6-일]옥시]에틸]아민, 트리스[2-[(4,6,9,11-테트라-tert-뷰틸다이벤조[d,f][1,3,2]다이옥사포스페핀-2-일)옥시]에틸]아민, 아인산 에틸비스(2,4-다이-tert-뷰틸-6-메틸페닐) 등을 들 수 있다. 산화 방지제의 시판품으로서는, 예를 들면, 아데카 스타브 AO-20, 아데카 스타브 AO-30, 아데카 스타브 AO-40, 아데카 스타브 AO-50, 아데카 스타브 AO-50F, 아데카 스타브 AO-60, 아데카 스타브 AO-60G, 아데카 스타브 AO-80, 아데카 스타브 AO-330(이상, (주)ADEKA제) 등을 들 수 있다. 또, 산화 방지제는, 일본 특허공보 제6268967호의 단락 번호 0023~0048에 기재된 화합물을 사용할 수도 있으며, 이 내용은 본 명세서에 원용된다. 또, 본 발명의 조성물은, 필요에 따라, 잠재 산화 방지제를 함유해도 된다. 잠재 산화 방지제로서는, 산화 방지제로서 기능하는 부위가 보호기로 보호된 화합물이며, 100~250℃에서 가열하거나, 또는 산/염기 촉매 존재하에서 80~200℃에서 가열함으로써 보호기가 탈리되어 산화 방지제로서 기능하는 화합물을 들 수 있다. 잠재 산화 방지제로서는, 국제 공개공보 제2014/021023호, 국제 공개공보 제2017/030005호, 일본 공개특허공보 2017-008219호에 기재된 화합물을 들 수 있으며, 이 내용은 본 명세서에 원용된다. 잠재 산화 방지제의 시판품으로서는, 아데카 아클즈 GPA-5001((주)ADEKA제) 등을 들 수 있다.The composition of the present invention may contain an antioxidant. By containing an antioxidant as an additive, elongation characteristics of the film after curing and adhesion to a metal material can be improved. As an antioxidant, a phenol compound, a phosphite compound, a thioether compound, etc. are mentioned. As the phenolic compound, any phenolic compound known as a phenolic antioxidant can be used. As a preferable phenol compound, a hindered phenol compound is mentioned. A compound having a substituent at a site adjacent to the phenolic hydroxy group (ortho position) is preferred. As the substituent described above, a substituted or unsubstituted alkyl group having 1 to 22 carbon atoms is preferable. Further, the antioxidant is also preferably a compound having a phenol group and a phosphite ester group in the same molecule. Moreover, a phosphorus antioxidant can also be used suitably as an antioxidant. As the phosphorus antioxidant, tris[2-[[2,4,8,10-tetrakis(1,1-dimethylethyl)dibenzo[d,f][1,3,2]dioxaphosphepine-6- yl]oxy]ethyl]amine, tris[2-[(4,6,9,11-tetra-tert-butyldibenzo[d,f][1,3,2]dioxaphosphepin-2-yl) oxy]ethyl]amine, phosphorous acid ethylbis(2,4-di-tert-butyl-6-methylphenyl), and the like. As a commercial item of an antioxidant, Adeka Stab AO-20, Adeka Stab AO-30, Adeka Stab AO-40, Adeka Stab AO-50, Adeka Stab AO-50F, for example, Adeka Stab AO-60, Adeka Stab AO-60G, Adeka Stab AO-80, Adeka Stab AO-330 (above, made by ADEKA Co., Ltd.), etc. are mentioned. Moreover, the antioxidant can also use the compound of Paragraph No. 0023 of Unexamined-Japanese-Patent No. 6268967 - 0048, The content of this is integrated in this specification. Moreover, the composition of this invention may contain a latent antioxidant as needed. As the latent antioxidant, the site functioning as an antioxidant is a compound protected by a protecting group, and the protecting group is released by heating at 100 to 250° C. or heating at 80 to 200° C. in the presence of an acid/base catalyst to function as an antioxidant. compounds can be mentioned. As a latent antioxidant, the compound of international publication 2014/021023, international publication 2017/030005, and Unexamined-Japanese-Patent No. 2017-008219 is mentioned, The content of this is integrated in this specification. As a commercial item of a latent antioxidant, Adeka Akles GPA-5001 (made by ADEKA Corporation) etc. are mentioned.
바람직한 산화 방지제의 예로서는, 2,2-싸이오비스(4-메틸-6-t-뷰틸페놀), 2,6-다이-t-뷰틸페놀 및 식 (3)으로 나타나는 화합물을 들 수 있다.Examples of preferable antioxidants include compounds represented by 2,2-thiobis(4-methyl-6-t-butylphenol), 2,6-di-t-butylphenol, and Formula (3).
[화학식 54][Formula 54]
일반식 (3) 중, R5는 수소 원자 또는 탄소수 2 이상(바람직하게는 탄소수 2~10)의 알킬기를 나타내고, R6은 탄소수 2 이상(바람직하게는 탄소수 2~10)의 알킬렌기를 나타낸다. R7은, 탄소수 2 이상(바람직하게는 탄소수 2~10)의 알킬렌기, 산소 원자, 및 질소 원자 중 적어도 어느 하나를 포함하는 1~4가의 유기기를 나타낸다. k는 1~4의 정수를 나타낸다.In the general formula (3), R 5 represents a hydrogen atom or an alkyl group having 2 or more carbon atoms (preferably 2 to 10 carbon atoms), and R 6 represents an alkylene group having 2 or more carbon atoms (preferably 2 to 10 carbon atoms). . R 7 represents a monovalent to tetravalent organic group containing at least one of an alkylene group having 2 or more carbon atoms (preferably 2 to 10 carbon atoms), an oxygen atom, and a nitrogen atom. k represents an integer from 1 to 4;
식 (3)으로 나타나는 화합물은, 수지가 갖는 지방족기나 페놀성 수산기의 산화 열화를 억제한다. 또, 금속 재료에 대한 방청 작용에 의하여, 금속 산화를 억제할 수 있다.The compound represented by formula (3) suppresses oxidative deterioration of the aliphatic group or phenolic hydroxyl group of the resin. In addition, metal oxidation can be suppressed by the rust-preventive effect on the metal material.
수지와 금속 재료에 동시에 작용할 수 있기 때문에, k는 2~4의 정수가 보다 바람직하다. R7로서는, 알킬기, 사이클로알킬기, 알콕시기, 알킬에터기, 알킬실릴기, 알콕시실릴기, 아릴기, 아릴에터기, 카복실기, 카보닐기, 알릴기, 바이닐기, 복소환기, -O-, -NH-, -NHNH-, 그들을 조합한 것 등을 들 수 있으며, 치환기를 더 갖고 있어도 된다. 이 중에서도, 현상액에 대한 용해성이나 금속 밀착성의 점에서, 알킬에터기, -NH-를 갖는 것이 바람직하고, 수지와의 상호 작용과 금속 착형성에 의한 금속 밀착성의 점에서 -NH-가 보다 바람직하다.Since it can act simultaneously on the resin and the metal material, k is more preferably an integer of 2 to 4. Examples of R 7 include an alkyl group, a cycloalkyl group, an alkoxy group, an alkyl ether group, an alkylsilyl group, an alkoxysilyl group, an aryl group, an aryl ether group, a carboxyl group, a carbonyl group, an allyl group, a vinyl group, a heterocyclic group, -O-, -NH-, -NHNH-, what combined them, etc. are mentioned, You may have a substituent further. Among these, from the viewpoint of solubility in a developing solution and metal adhesion, those having an alkyl ether group and -NH- are preferable, and -NH- is more preferable from the viewpoint of interaction with resin and metal adhesion due to metal complexation. .
일반식 (3)으로 나타나는 화합물은, 예로서는 이하의 것을 들 수 있지만, 하기 구조에 한정되지 않는다.Although the following are mentioned as an example of the compound represented by General formula (3), It is not limited to the following structure.
[화학식 55][Formula 55]
[화학식 56][Formula 56]
[화학식 57][Formula 57]
[화학식 58][Formula 58]
산화 방지제의 첨가량은, 수지에 대하여, 0.1~10질량부가 바람직하고, 0.5~5질량부가 보다 바람직하다. 첨가량을 0.1질량부 이상으로 함으로써, 고온 고습 환경하에 있어서도 신도 특성이나 금속 재료에 대한 밀착성 향상의 효과가 얻어지기 쉽고, 또 10질량부 이하로 함으로써, 예를 들면 감광제와의 상호 작용에 의하여, 수지 조성물의 감도가 향상된다. 산화 방지제는 1종만을 이용해도 되고, 2종 이상을 이용해도 된다. 2종 이상을 이용하는 경우는, 그들의 합계량이 상기 범위가 되는 것이 바람직하다.The addition amount of the antioxidant is preferably 0.1 to 10 parts by mass, more preferably 0.5 to 5 parts by mass, based on the resin. By setting the addition amount to 0.1 parts by mass or more, the effect of improving the elongation properties and adhesion to metal materials is easily obtained even in a high-temperature, high-humidity environment, and by setting it to 10 parts by mass or less, for example, by interaction with the photosensitive agent, The sensitivity of the composition is improved. Antioxidant may use only 1 type, and may use 2 or more types. When using 2 or more types, it is preferable that those total amounts become the said range.
〔응집 방지제〕[anti-agglomeration agent]
본 실시형태의 수지 조성물은, 필요에 따라 응집 방지제를 함유해도 된다. 응집 방지제로서는, 폴리아크릴산 나트륨 등을 들 수 있다.The resin composition of this embodiment may contain an aggregation inhibitor as needed. As an aggregation inhibitor, sodium polyacrylate etc. are mentioned.
본 발명에 있어서는, 응집 방지제는 1종을 단독으로 이용해도 되고, 2종 이상을 조합하여 이용해도 된다.In this invention, an aggregation inhibitor may be used individually by 1 type, and may be used in combination of 2 or more type.
본 발명의 조성물은, 응집 방지제를 포함해도 되고 포함하지 않아도 되지만, 포함하는 경우, 응집 방지제의 함유량은, 본 발명의 조성물의 전고형분 질량에 대하여, 0.01질량% 이상 10질량% 이하인 것이 바람직하고, 0.02질량% 이상 5질량% 이하인 것이 보다 바람직하다.The composition of the present invention may or may not contain an aggregation inhibitor, but when it is included, the content of the aggregation inhibitor is preferably 0.01% by mass or more and 10% by mass or less with respect to the total solid mass of the composition of the present invention, It is more preferable that it is 0.02 mass % or more and 5 mass % or less.
〔페놀계 화합물〕[phenolic compound]
본 실시형태의 수지 조성물은, 필요에 따라 페놀계 화합물을 함유해도 된다. 페놀계 화합물로서는, Bis-Z, BisP-EZ, TekP-4HBPA, TrisP-HAP, TrisP-PA, BisOCHP-Z, BisP-MZ, BisP-PZ, BisP-IPZ, BisOCP-IPZ, BisP-CP, BisRS-2P, BisRS-3P, BisP-OCHP, 메틸렌트리스-FR-CR, BisRS-26X(이상, 상품명, 혼슈 가가쿠 고교(주)제), BIP-PC, BIR-PC, BIR-PTBP, BIR-BIPC-F(이상, 상품명, 아사히 유키자이 고교(주)제) 등을 들 수 있다.The resin composition of this embodiment may contain a phenolic compound as needed. As the phenolic compound, Bis-Z, BisP-EZ, TekP-4HBPA, TrisP-HAP, TrisP-PA, BisOCHP-Z, BisP-MZ, BisP-PZ, BisP-IPZ, BisOCP-IPZ, BisP-CP, BisRS -2P, BisRS-3P, BisP-OCHP, Methylenetris-FR-CR, BisRS-26X (above, product name, manufactured by Honshu Chemical Industry Co., Ltd.), BIP-PC, BIR-PC, BIR-PTBP, BIR- BIPC-F (above, brand name, Asahi Yukizai Kogyo Co., Ltd. product), etc. are mentioned.
본 발명에 있어서는, 페놀계 화합물은 1종을 단독으로 이용해도 되고, 2종 이상을 조합하여 이용해도 된다.In this invention, a phenol type compound may be used individually by 1 type, and may be used in combination of 2 or more type.
본 발명의 조성물은, 페놀계 화합물을 포함해도 되고 포함하지 않아도 되지만, 포함하는 경우, 페놀계 화합물의 함유량은, 본 발명의 조성물의 전고형분 질량에 대하여, 0.01질량% 이상 30질량% 이하인 것이 바람직하고, 0.02질량% 이상 20질량% 이하인 것이 보다 바람직하다.The composition of the present invention may or may not contain a phenolic compound, but when it is included, the content of the phenolic compound is preferably 0.01% by mass or more and 30% by mass or less with respect to the total solid mass of the composition of the present invention and more preferably 0.02% by mass or more and 20% by mass or less.
〔다른 고분자 화합물〕[Other high molecular compounds]
다른 고분자 화합물로서는, 실록세인 수지, (메트)아크릴산을 공중합한 (메트)아크릴 폴리머, 노볼락 수지, 레졸 수지, 폴리하이드록시스타이렌 수지 및 그들의 공중합체 등을 들 수 있다. 다른 고분자 화합물은 메틸올기, 알콕시메틸기, 에폭시기 등의 가교기가 도입된 변성체여도 된다.Examples of other high molecular compounds include siloxane resins, (meth)acrylic polymers copolymerized with (meth)acrylic acid, novolak resins, resole resins, polyhydroxystyrene resins, copolymers thereof, and the like. The other high molecular compound may be a modified body into which a crosslinking group such as a methylol group, an alkoxymethyl group, or an epoxy group has been introduced.
본 발명에 있어서는, 다른 고분자 화합물은 1종을 단독으로 이용해도 되고, 2종 이상을 조합하여 이용해도 된다.In the present invention, the other high molecular compounds may be used singly or in combination of two or more.
본 발명의 조성물은, 다른 고분자 화합물을 포함해도 되고 포함하지 않아도 되지만, 포함하는 경우, 다른 고분자 화합물의 함유량은, 본 발명의 조성물의 전고형분 질량에 대하여, 0.01질량% 이상 30질량% 이하인 것이 바람직하고, 0.02질량% 이상 20질량% 이하인 것이 보다 바람직하다.The composition of the present invention may or may not contain other high molecular compounds, but in the case where they are included, the content of the other high molecular compounds is preferably 0.01% by mass or more and 30% by mass or less with respect to the total solid mass of the composition of the present invention. and more preferably 0.02% by mass or more and 20% by mass or less.
<수지 조성물의 특성><Characteristics of Resin Composition>
본 발명의 수지 조성물의 점도는, 수지 조성물의 고형분 농도에 의하여 조정할 수 있다. 도포막 두께의 관점에서, 1,000mm2/s~12,000mm2/s가 바람직하고, 2,000mm2/s~10,000mm2/s가 보다 바람직하며, 3,000mm2/s~8,000mm2/s가 더 바람직하다. 상기 범위이면, 균일성이 높은 도포막을 얻는 것이 용이해진다. 1,000mm2/s 이하에서는, 예를 들면 재배선용 절연막으로서 필요로 하는 막두께로 도포하는 것이 곤란하고, 12,000mm2/s 이상에서는, 도포면 형상이 악화될 가능성이 있다.The viscosity of the resin composition of the present invention can be adjusted by the solid content concentration of the resin composition. From the viewpoint of the coating film thickness, 1,000 mm 2 /s to 12,000 mm 2 /s are preferred, 2,000 mm 2 /s to 10,000 mm 2 /s are more preferred, and 3,000 mm 2 /s to 8,000 mm 2 /s are preferred. more preferable If it is the said range, it becomes easy to obtain a coating film with high uniformity. At 1,000 mm 2 /s or less, it is difficult to apply the film to a film thickness required as, for example, an insulating film for rewiring, and at 12,000 mm 2 /s or more, the coated surface shape may deteriorate.
<수지 조성물의 함유 물질에 대한 제한><Restrictions on Materials Contained in Resin Composition>
본 발명의 수지 조성물의 함수율은, 2.0질량% 미만인 것이 바람직하고, 1.5질량% 미만인 것이 보다 바람직하며, 1.0질량% 미만인 것이 더 바람직하다. 2.0% 이상에서는, 수지 조성물의 보존 안정성이 손상될 가능성이 있다.The moisture content of the resin composition of the present invention is preferably less than 2.0% by mass, more preferably less than 1.5% by mass, and still more preferably less than 1.0% by mass. At 2.0% or more, there is a possibility that the storage stability of the resin composition is impaired.
수분의 함유량을 유지하는 방법으로서는, 보관 조건에 있어서의 습도의 조정, 보관 시의 수용 용기의 공극률 저감 등을 들 수 있다.As a method of maintaining the content of water, adjustment of humidity in storage conditions, reduction of the porosity of the container at the time of storage, etc. are mentioned.
본 발명의 수지 조성물의 금속 함유량은, 절연성의 관점에서, 5질량ppm(parts per million) 미만이 바람직하고, 1질량ppm 미만이 보다 바람직하며, 0.5질량ppm 미만이 더 바람직하다. 금속으로서는, 나트륨, 칼륨, 마그네슘, 칼슘, 철, 구리, 크로뮴, 니켈 등을 들 수 있지만, 유기 화합물과 금속의 착체로서 포함되는 금속은 제외한다. 금속을 복수 포함하는 경우는, 이들 금속의 합계가 상기 범위인 것이 바람직하다.From an insulating viewpoint, the metal content of the resin composition of the present invention is preferably less than 5 ppm by mass (parts per million), more preferably less than 1 ppm by mass, and still more preferably less than 0.5 ppm by mass. Examples of the metal include sodium, potassium, magnesium, calcium, iron, copper, chromium, and nickel, but metals contained as complexes of organic compounds and metals are excluded. When a plurality of metals are included, it is preferable that the sum of these metals is within the above range.
또, 본 발명의 수지 조성물에 의도치 않게 포함되는 금속 불순물을 저감시키는 방법으로서는, 본 발명의 수지 조성물을 구성하는 원료로서 금속 함유량이 적은 원료를 선택하거나, 본 발명의 수지 조성물을 구성하는 원료에 대하여 필터 여과를 행하거나, 장치 내를 폴리테트라플루오로에틸렌 등으로 라이닝하여 컨태미네이션을 가능한 한 억제한 조건하에서 증류를 행하는 등의 방법을 들 수 있다.In addition, as a method for reducing metal impurities unintentionally contained in the resin composition of the present invention, a raw material having a low metal content is selected as a raw material constituting the resin composition of the present invention, or a raw material constituting the resin composition of the present invention For example, a method of performing filter filtration on the substrate, lining the inside of the apparatus with polytetrafluoroethylene or the like, and performing distillation under conditions in which contamination is suppressed as much as possible is exemplified.
본 발명의 수지 조성물은, 반도체 재료로서의 용도를 고려하면, 할로젠 원자의 함유량이, 배선 부식성의 관점에서, 500질량ppm 미만이 바람직하고, 300질량ppm 미만이 보다 바람직하며, 200질량ppm 미만이 더 바람직하다. 그중에서도, 할로젠 이온의 상태로 존재하는 것은, 5질량ppm 미만이 바람직하고, 1질량ppm 미만이 보다 바람직하며, 0.5질량ppm 미만이 더 바람직하다. 할로젠 원자로서는, 염소 원자 및 브로민 원자를 들 수 있다. 염소 원자 및 브로민 원자, 또는 염소 이온 및 브로민 이온의 합계가 각각 상기 범위인 것이 바람직하다.In the resin composition of the present invention, considering the use as a semiconductor material, the halogen atom content is preferably less than 500 ppm by mass, more preferably less than 300 ppm by mass, and more preferably less than 200 ppm by mass, from the viewpoint of wiring corrosiveness. more preferable Especially, as for what exists in the state of a halogen ion, less than 5 mass ppm is preferable, less than 1 mass ppm is more preferable, and less than 0.5 mass ppm is still more preferable. As a halogen atom, a chlorine atom and a bromine atom are mentioned. It is preferable that the sum of chlorine atoms and bromine atoms, or chlorine ions and bromine ions, respectively is within the above range.
할로젠 원자의 함유량을 조절하는 방법으로서는, 이온 교환 처리 등을 바람직하게 들 수 있다.As a method of adjusting the content of halogen atoms, ion exchange treatment or the like is preferably used.
본 발명의 수지 조성물의 수용 용기로서는 종래 공지의 수용 용기를 이용할 수 있다. 또, 수용 용기로서는, 원재료나 본 발명의 수지 조성물 중으로의 불순물 혼입을 억제하는 것을 목적으로, 용기 내벽을 6종 6층의 수지로 구성한 다층 보틀이나, 6종의 수지를 7층 구조로 한 보틀을 사용하는 것도 바람직하다. 이와 같은 용기로서는 예를 들면 일본 공개특허공보 2015-123351호에 기재된 용기를 들 수 있다.A conventionally well-known container can be used as a container for the resin composition of the present invention. In addition, as the storage container, for the purpose of suppressing the mixing of impurities into the raw materials or the resin composition of the present invention, a multi-layered bottle in which the inner wall of the container is made of 6 types of 6-layer resin, and a bottle in which 6 types of resin are used in a 7-layer structure It is also preferable to use As such a container, the container of Unexamined-Japanese-Patent No. 2015-123351 is mentioned, for example.
<수지 조성물의 경화물><cured product of resin composition>
본 발명의 수지 조성물을 경화함으로써, 이 수지 조성물의 경화물을 얻을 수 있다.By curing the resin composition of the present invention, a cured product of this resin composition can be obtained.
본 발명의 경화물은, 본 발명의 수지 조성물을 경화하여 이루어지는 경화물이다.The cured product of the present invention is a cured product formed by curing the resin composition of the present invention.
수지 조성물의 경화는 가열에 의한 것인 것이 바람직하고, 가열 온도가 120℃~400℃의 범위 내인 것이 보다 바람직하며, 140℃~380℃의 범위 내에 있는 것이 더 바람직하고, 170℃~350℃의 범위 내에 있는 것이 특히 바람직하다. 수지 조성물의 경화물의 형태는, 특별히 한정되지 않으며, 필름상, 봉상, 구상, 펠릿상 등, 용도에 맞추어 선택할 수 있다. 본 발명에 있어서, 이 경화물은, 필름상인 것이 바람직하다. 또, 수지 조성물의 패턴 가공에 의하여, 벽면에 대한 보호막의 형성, 도통(導通)을 위한 바이어 홀(via hole) 형성, 임피던스나 정전 용량 혹은 내부 응력의 조정, 방열 기능 부여 등, 용도에 맞추어, 이 경화물의 형상을 선택할 수도 있다. 이 경화물(경화물로 이루어지는 막)의 막두께는, 0.5μm 이상 150μm 이하인 것이 바람직하다.Curing of the resin composition is preferably performed by heating, and the heating temperature is more preferably in the range of 120°C to 400°C, more preferably in the range of 140°C to 380°C, and more preferably in the range of 170°C to 350°C. What is within the range is particularly preferred. The shape of the cured product of the resin composition is not particularly limited, and may be selected according to the application, such as a film shape, a rod shape, a spherical shape, or a pellet shape. In this invention, it is preferable that this hardened|cured material is film-like. In addition, by pattern processing of the resin composition, according to the application, such as formation of a protective film on the wall surface, formation of via holes for conduction, adjustment of impedance, capacitance or internal stress, imparting a heat dissipation function, The shape of this cured product can also be selected. It is preferable that the film thickness of this hardened|cured material (film|membrane consisting of hardened|cured material) is 0.5 micrometer or more and 150 micrometer or less.
본 발명의 수지 조성물을 경화했을 때의 수축률은, 50% 이하가 바람직하고, 45% 이하가 보다 바람직하며, 40% 이하가 더 바람직하다. 여기에서, 수축률은, 수지 조성물의 경화 전후의 체적 변화의 백분율을 가리키며, 하기의 식으로부터 산출할 수 있다.The shrinkage rate when the resin composition of the present invention is cured is preferably 50% or less, more preferably 45% or less, still more preferably 40% or less. Here, the shrinkage rate refers to the percentage of the volume change before and after curing of the resin composition, and can be calculated from the following formula.
수축률[%]=100-(경화 후의 체적÷경화 전의 체적)×100Shrinkage rate [%] = 100 - (volume after curing ÷ volume before curing) × 100
<수지 조성물의 경화물의 특성><Characteristics of cured product of resin composition>
본 발명의 수지 조성물의 경화물의 이미드화 반응률은, 70% 이상이 바람직하고, 80% 이상이 보다 바람직하며, 90% 이상이 더 바람직하다. 70% 미만에서는 경화물의 기계 특성이 뒤떨어질 가능성이 있다.The imidation reaction rate of the cured product of the resin composition of the present invention is preferably 70% or more, more preferably 80% or more, and still more preferably 90% or more. If less than 70%, there is a possibility that the mechanical properties of the cured product are inferior.
본 발명의 수지 조성물의 경화물의 파단 신도는, 30% 이상이 바람직하고, 40% 이상이 보다 바람직하며, 50% 이상이 더 바람직하다.The elongation at break of the cured product of the resin composition of the present invention is preferably 30% or more, more preferably 40% or more, and still more preferably 50% or more.
본 발명의 수지 조성물의 경화물의 유리 전이 온도(Tg)는, 180℃ 이상인 것이 바람직하고, 210℃ 이상인 것이 보다 바람직하며, 230℃ 이상인 것이 더 바람직하다.The glass transition temperature (Tg) of the cured product of the resin composition of the present invention is preferably 180°C or higher, more preferably 210°C or higher, and still more preferably 230°C or higher.
(현상액)(developer)
본 발명의 현상액은, 본 발명의 경화물의 제조 방법에 있어서 이용되는 현상액이다.The developer of the present invention is a developer used in the method for producing a cured product of the present invention.
본 발명의 현상액은, 상술한 본 발명의 경화물의 제조 방법의 현상 공정에 있어서 설명한 현상액과 동일한 의미이며, 바람직한 양태도 동일하다.The developing solution of the present invention has the same meaning as the developing solution described in the developing step of the production method of the cured product of the present invention described above, and the preferred embodiments are also the same.
실시예Example
이하에 실시예를 들어 본 발명을 더 구체적으로 설명한다. 이하의 실시예에 나타내는 재료, 사용량, 비율, 처리 내용, 처리 수순 등은, 본 발명의 취지를 벗어나지 않는 한, 적절히, 변경할 수 있다. 따라서, 본 발명의 범위는 이하에 나타내는 구체예에 한정되는 것은 아니다. "부", "%"는 특별히 설명하지 않는 한, 질량 기준이다.The present invention will be described in more detail by way of examples below. The materials, usage amount, ratio, processing content, processing procedure, etc. shown in the following examples can be appropriately changed as long as they do not deviate from the spirit of the present invention. Therefore, the scope of the present invention is not limited to the specific examples shown below. "Part" and "%" are based on mass unless otherwise specified.
<아세탈체 A-1, A-2의 합성><Synthesis of Acetal Forms A-1 and A-2>
[화학식 59][Formula 59]
1구 플라스크에, 2-페닐프로피온알데하이드(도쿄 가세이 고교(주)제) 34.90g(260밀리몰), 에틸렌글라이콜모노프로필에터(도쿄 가세이 고교(주)제) 59.60g(572밀리몰), (±)-10-캄퍼설폰산(도쿄 가세이 고교(주)제) 0.6g(2.6밀리몰), 황산 마그네슘(도쿄 가세이 고교(주)제) 30g을 더하여 반응 용액을 얻었다. 얻어진 반응 용액을 25℃에서 30분 교반한 후 50℃로 승온하고, 24시간 교반했다. 교반 후의 용액을 25℃로 냉각하고, 트라이에틸아민(도쿄 가세이 고교(주)제) 1.32g(13밀리몰)을 첨가한 후, 아세트산 에틸 500mL에 용해하여, 분액 깔때기로 옮겼다. 분액 깔때기 중의 아세트산 에틸 용액을 포화 중조수 200mL로 3회 세정한 후, 이배퍼레이터로 용매를 제거하여, 아세탈체 A-1을 72g 얻었다.In a one-necked flask, 34.90 g (260 mmol) of 2-phenylpropionaldehyde (manufactured by Tokyo Kasei Kogyo Co., Ltd.), 59.60 g (572 mmol) of ethylene glycol monopropyl ether (manufactured by Tokyo Kasei Kogyo Co., Ltd.), 0.6 g (2.6 mmol) of (±)-10-camphorsulfonic acid (manufactured by Tokyo Kasei Kogyo Co., Ltd.) and 30 g of magnesium sulfate (manufactured by Tokyo Kasei Kogyo Co., Ltd.) were added to obtain a reaction solution. After stirring the obtained reaction solution at 25 degreeC for 30 minutes, it heated up to 50 degreeC and stirred for 24 hours. The solution after stirring was cooled to 25°C, and after adding 1.32 g (13 mmol) of triethylamine (manufactured by Tokyo Chemical Industry Co., Ltd.), it was dissolved in 500 mL of ethyl acetate and transferred to a separatory funnel. After washing the ethyl acetate solution in the separatory funnel three times with 200 mL of saturated sodium bicarbonate water, the solvent was removed with an evaporator to obtain 72 g of acetal body A-1.
동일한 방법으로, 아세탈체 A-2를 합성했다.Acetal body A-2 was synthesized in the same manner.
[화학식 60][Formula 60]
<클로로체 B-1, B-2의 합성><Synthesis of chloroforms B-1 and B-2>
1구 플라스크에 상기에서 합성한 A-1을 72g, 아세틸 클로라이드(도쿄 가세이 고교(주)제) 19.1g(243밀리몰)을 더하여 반응 용액을 얻었다. 얻어진 반응 용액을 25℃에서 1시간 교반한 후 45℃로 승온하고, 4시간 교반하여, 클로로체 B-1을 91g 얻었다.To a one-necked flask, 72 g of A-1 synthesized above and 19.1 g (243 mmol) of acetyl chloride (manufactured by Tokyo Kasei Kogyo Co., Ltd.) were added to obtain a reaction solution. After the obtained reaction solution was stirred at 25°C for 1 hour, the temperature was raised to 45°C and stirred for 4 hours to obtain 91 g of chloroform B-1.
[화학식 61][Formula 61]
동일한 방법으로, 클로로체 B-2를 합성했다.Chloroform B-2 was synthesized in the same manner.
[화학식 62][Formula 62]
<합성예: 폴리머 P-1의 합성><Synthesis Example: Synthesis of Polymer P-1>
플라스크에, 4,4'-옥시다이프탈산 이무수물 31.02g(100밀리몰), N-메틸피롤리돈(NMP) 145g을 더한 후, 25℃에서 교반하면서, 4,4'-다이아미노다이페닐에터 18.02g(90밀리몰)을 첨가했다. 3시간 교반 후, NMP를 130g 첨가하여, 희석했다.After adding 31.02 g (100 mmol) of 4,4'-oxydiphthalic dianhydride and 145 g of N-methylpyrrolidone (NMP) to a flask, while stirring at 25°C, 4,4'-diaminodiphenyl 18.02 g (90 mmol) of ether was added. After stirring for 3 hours, 130 g of NMP was added and diluted.
얻어진 희석액을, -5℃ 이하로 냉각한 후, 다이아이소프로필에틸아민 25.85g(200밀리몰)을 30분 동안 적하하고, 이어서 2-메톡시에톡시메틸 클로라이드(도쿄 가세이 고교(주)제) 24.91g(200밀리몰)을 1시간 동안 적하하며, -10~-5℃에서, 1시간 교반했다. 얻어진 교반 후의 용액을 메탄올 5L에 더한 후, 30분 교반했다. 교반 후의 용액을 30분 정치한 후, 상등액을 버려, 고형물을 얻었다. 이 고형물을 테트라하이드로퓨란 300mL에 용해한 후, 헥세인 5L에 더하고, 30분 교반하며, 이어서 여과, 건조하여, 폴리머 P-1을 56g 얻었다.After cooling the obtained diluted solution to -5°C or lower, 25.85 g (200 mmol) of diisopropylethylamine was added dropwise over 30 minutes, followed by 2-methoxyethoxymethyl chloride (manufactured by Tokyo Kasei Kogyo Co., Ltd.) 24.91 g (200 mmol) was added dropwise over 1 hour, and stirred at -10 to -5°C for 1 hour. After adding the obtained solution after stirring to 5 L of methanol, it stirred for 30 minutes. After the solution after stirring was left still for 30 minutes, the supernatant liquid was discarded to obtain a solid substance. After dissolving this solid matter in 300 mL of tetrahydrofuran, it was added to hexane 5L, stirred for 30 minutes, then filtered and dried to obtain 56 g of polymer P-1.
<합성예: 폴리머 P-2의 합성><Synthesis Example: Synthesis of Polymer P-2>
플라스크에, t-뷰틸알코올 9.64g(130밀리몰), 테트라하이드로퓨란 30mL를 더하고, -10℃로 냉각한 후, n-뷰틸리튬(20질량% 사이클로헥세인 용액) 43.7g을 적하하여, TB-1을 얻었다.After adding 9.64 g (130 mmol) of t-butyl alcohol and 30 mL of tetrahydrofuran to the flask and cooling to -10°C, 43.7 g of n-butyllithium (20% by mass cyclohexane solution) was added dropwise, and TB- got 1
상기와는 다른 플라스크 중에서, 4,4'-옥시다이프탈산 이무수물 20.0g(64.5밀리몰)을 다이글라임 100mL 중에 현탁시키고, 하이드로퀴논 0.05g, 피리딘 10.7g(135밀리몰)을 계속해서 첨가하며, 추가로 상기 TB-1을 전량 적하 깔때기를 이용하여 1시간 동안 적하하고, 그 후, 25℃의 온도에서 5시간 교반했다. 얻어진 혼합액을 -10℃까지 냉각한 후, 염화 싸이오닐 16.1g(135.5밀리몰)을 90분 동안 적하하여, 피리디늄하이드로 클로라이드의 백색 침전물을 얻었다. 이어서, 백색 침전물을 포함하는 혼합액을 실온까지 가온하고, 2시간 교반한 후, 피리딘 9.7g(123밀리몰) 및 N-메틸피롤리돈(NMP) 25mL를 첨가하여, 용액을 얻었다. 이어서, 얻어진 용액에, 4,4'-다이아미노다이페닐에터 11.8g(58.7밀리몰)을 NMP 100mL 중에 용해시킨 용해액을, 1시간 동안 적하에 의하여 첨가했다. 얻어진 혼합액에, 메탄올 5.6g(17.5밀리몰)과 3,5-다이-tert-뷰틸-4-하이드록시톨루엔 0.05g을 더한 후, 2시간 교반했다. 이어서, 교반 후의 혼합액을 4리터의 물에 더하여 폴리이미드 전구체 수지를 침전시킨 후, 500rpm의 속도로 15분간 교반했다. 폴리이미드 전구체 수지를 여과하여 취득한 후, 4리터의 물에, 얻어진 폴리이미드 전구체 수지를 첨가하고, 재차 30분간 교반하여, 다시 여과했다. 이어서, 얻어진 폴리이미드 전구체 수지를 감압하, 45℃에서 3일간 건조하여, P-2를 33g 얻었다.In a flask different from the above, 20.0 g (64.5 mmol) of 4,4'-oxydiphthalic dianhydride was suspended in 100 mL of diglyme, and 0.05 g of hydroquinone and 10.7 g (135 mmol) of pyridine were successively added, Furthermore, the above TB-1 was added dropwise over 1 hour using a dropping funnel, and then stirred at a temperature of 25°C for 5 hours. After cooling the obtained mixture to -10°C, 16.1 g (135.5 mmol) of thionyl chloride was added dropwise over 90 minutes to obtain a white precipitate of pyridinium hydrochloride. Then, after heating the mixture containing the white precipitate to room temperature and stirring for 2 hours, 9.7 g (123 mmol) of pyridine and 25 mL of N-methylpyrrolidone (NMP) were added to obtain a solution. Subsequently, a solution obtained by dissolving 11.8 g (58.7 mmol) of 4,4'-diaminodiphenyl ether in 100 mL of NMP was added dropwise over 1 hour to the obtained solution. After adding 5.6 g (17.5 mmol) of methanol and 0.05 g of 3,5-di-tert-butyl-4-hydroxytoluene to the obtained liquid mixture, it stirred for 2 hours. Next, after adding the liquid mixture after stirring to 4 liters of water to precipitate the polyimide precursor resin, the mixture was stirred at a speed of 500 rpm for 15 minutes. After obtaining by filtering polyimide precursor resin, the obtained polyimide precursor resin was added to 4 liters of water, it stirred again for 30 minutes, and filtered again. Next, the obtained polyimide precursor resin was dried at 45°C for 3 days under reduced pressure to obtain 33 g of P-2.
<합성예: 폴리머 P-3의 합성><Synthesis Example: Synthesis of Polymer P-3>
2-메톡시에톡시메틸 클로라이드 대신에 등몰양의 B-1을 사용한 것 이외에는, P-1과 동일한 방법으로 폴리머 P-3을 합성했다.Polymer P-3 was synthesized in the same manner as P-1, except that an equimolar amount of B-1 was used instead of 2-methoxyethoxymethyl chloride.
<합성예: 폴리머 P-4의 합성><Synthesis Example: Synthesis of Polymer P-4>
2-메톡시에톡시메틸 클로라이드 대신에 등몰양의 B-2를 사용한 것 이외에는, P-1과 동일한 방법으로 폴리머 P-4를 합성했다.Polymer P-4 was synthesized in the same manner as in P-1, except that an equimolar amount of B-2 was used instead of 2-methoxyethoxymethyl chloride.
<합성예: 폴리머 P-5의 합성><Synthesis Example: Synthesis of Polymer P-5>
플라스크에, 4,4'-바이프탈산 무수물 29.42g(100밀리몰), N-메틸피롤리돈(NMP) 145g을 더한 후, 25℃에서 교반하면서, 4,4'-다이아미노다이페닐에터 18.02g(90밀리몰)을 첨가했다. 3시간 교반 후, NMP를 130g 첨가하여, 희석했다.After adding 29.42 g (100 mmol) of 4,4'-biphthalic anhydride and 145 g of N-methylpyrrolidone (NMP) to a flask, 4,4'-diaminodiphenyl ether 18.02 was stirred at 25°C. g (90 mmol) was added. After stirring for 3 hours, 130 g of NMP was added and diluted.
얻어진 희석액을, -5℃ 이하로 냉각한 후, 다이아이소프로필에틸아민 25.85g(200밀리몰)을 30분 동안 적하하고, 이어서 B-2(상기 합성품) 72.4g(200밀리몰)을 1시간 동안 적하하며, -10~-5℃에서, 1시간 교반했다. 얻어진 교반 후의 용액을 메탄올 5L에 더한 후, 30분 교반했다. 교반 후의 용액을 30분 정치한 후, 상등액을 버려, 고형물을 얻었다. 이 고형물을 테트라하이드로퓨란 300mL에 용해한 후, 헥세인 5L에 더하고, 30분 교반하며, 이어서 여과, 건조하여, 폴리머 P-5를 52g 얻었다.After cooling the obtained diluted solution to -5°C or lower, 25.85 g (200 mmol) of diisopropylethylamine was added dropwise over 30 minutes, and then 72.4 g (200 mmol) of B-2 (the above synthetic product) was added dropwise over 1 hour. and stirred for 1 hour at -10 to -5°C. After adding the obtained solution after stirring to 5 L of methanol, it stirred for 30 minutes. After the solution after stirring was left still for 30 minutes, the supernatant liquid was discarded to obtain a solid substance. After dissolving this solid matter in 300 mL of tetrahydrofuran, it was added to hexane 5L, stirred for 30 minutes, then filtered and dried to obtain 52 g of polymer P-5.
<합성예: 폴리머 P-6의 합성><Synthesis Example: Synthesis of Polymer P-6>
4,4'-다이아미노다이페닐에터의 첨가량을 16.0g(80밀리몰)으로 변경한 것 이외에, P-1과 동일한 방법으로 폴리머 P-6을 합성했다.Polymer P-6 was synthesized in the same manner as in P-1, except that the amount of 4,4'-diaminodiphenyl ether added was changed to 16.0 g (80 mmol).
<실시예 및 비교예><Examples and Comparative Examples>
각 실시예에 있어서, 각각, 하기 표에 기재된 성분을 혼합하여, 각 수지 조성물을 얻었다. 또, 비교예에 있어서, 하기 표에 기재된 성분을 혼합하여, 비교용 조성물을 얻었다.In each Example, each resin composition was obtained by mixing the components described in the table below, respectively. Moreover, in the comparative example, the components described in the table below were mixed to obtain a composition for comparison.
구체적으로는, 표에 기재된 성분의 함유량은, 표의 "질량부"의 난에 기재된 양으로 했다. 또, 각 조성물에 있어서, 용제의 함유량은, 조성물의 고형분 농도가 표에 기재된 값(질량%)이 되도록 했다.Specifically, the content of the components described in the table was set to the amount described in the column of "parts by mass" in the table. In addition, in each composition, the content of the solvent was such that the solid content concentration of the composition became the value (% by mass) described in the table.
얻어진 수지 조성물 및 비교용 조성물은, 필터 구멍 직경이 0.8μm인 폴리테트라플루오로에틸렌제 필터를 통과시켜 가압 여과했다.The obtained resin composition and comparative composition were subjected to pressure filtration through a filter made of polytetrafluoroethylene having a filter pore size of 0.8 µm.
또, 표 중, "-"의 기재는 해당하는 성분을 조성물이 함유하고 있지 않은 것을 나타내고 있다.In addition, in the table|surface, description of "-" shows that the composition does not contain the component concerned.
[표 1][Table 1]
[표 2][Table 2]
[표 3][Table 3]
[표 4][Table 4]
표에 기재한 각 성분의 상세는 하기와 같다.The detail of each component described in the table|surface is as follows.
〔수지〕〔profit〕
·P-1~P-6: 상기에서 합성한 P-1~P-6P-1 to P-6: P-1 to P-6 synthesized above
〔가교제(중합성 화합물)〕[Crosslinking agent (polymerizable compound)]
·B-1~B-4: 하기 구조의 화합물B-1 to B-4: Compounds with the following structures
[화학식 63][Formula 63]
〔광산발생제〕[mine generator]
·C-1~C-4: 하기 구조의 화합물C-1 to C-4: Compounds with the following structures
[화학식 64][Formula 64]
〔광중합 개시제〕[Photoinitiator]
·I-1: Irgacure OXE-01(BASF사제)・I-1: Irgacure OXE-01 (manufactured by BASF)
〔실레인 커플링제〕[Silane coupling agent]
·D-1: 3-글리시독시프로필메틸다이메톡시실레인D-1: 3-glycidoxypropylmethyldimethoxysilane
·D-2: 하기 구조의 화합물D-2: a compound having the following structure
[화학식 65][Formula 65]
〔마이그레이션 억제제〕[migration inhibitor]
·E-1: 테트라졸E-1: tetrazole
〔첨가제(산포착제)〕[Additive (acid trapping agent)]
·F-1: 트라이도데실아민F-1: tridodecylamine
·F-2: 트라이페닐이미다졸F-2: triphenylimidazole
·F-3: DBU(다이아자바이사이클로운데센)F-3: DBU (diazabicycloundecene)
〔용제〕〔solvent〕
·GBL: γ-뷰티로락톤GBL: γ-butyrolactone
·DMSO: 다이메틸설폭사이드DMSO: dimethyl sulfoxide
표 중, "비율"의 난의 기재는, 용제의 전체 질량에 대한 각 용제의 함유량(질량%)을 나타내고 있다.In the table, the description in the column of “ratio” indicates the content (% by mass) of each solvent relative to the total mass of the solvent.
(평가)(evaluation)
<해상성 평가><Resolution Evaluation>
각 실시예 및 비교예에 있어서, 각각, 실리콘 기판 상에, 수지 조성물 또는 비교용 조성물을 스핀 코트법에 의하여 도포하여, 도포막을 형성했다. 이어서, 핫플레이트를 이용하여, 표의 "PB 온도(℃)"에 기재된 온도에서 300초간 가열 처리를 행하여, 수지 조성물층을 형성했다. 수지 조성물층의 두께는, 린스 후의 막두께가 표 중의 "변성 후 막두께(μm)"의 난에 기재된 값이 되도록, 적절히 변경했다.In each Example and Comparative Example, a resin composition or a comparative composition was applied on a silicon substrate by a spin coating method to form a coating film. Next, using a hot plate, a heat treatment was performed for 300 seconds at the temperature described in "PB temperature (°C)" in the table to form a resin composition layer. The thickness of the resin composition layer was appropriately changed so that the film thickness after rinsing became the value described in the column of "film thickness after modification (μm)" in the table.
이어서, 수지 조성물층에 대하여, 브로드 밴드 노광기(우시오 덴키 주식회사제: UX-1000SN-EH01)로 i선 필터를 이용하여, 노광을 행했다. 노광량은 400mJ/cm2로 했다. 포토마스크로서는, 도판 테스트 차트(No. 1, 네거티브 타입, 도판 인사츠제)를 이용했다.Next, the resin composition layer was exposed using an i-line filter with a broadband exposure machine (manufactured by Ushio Electric Co., Ltd.: UX-1000SN-EH01). The exposure amount was 400 mJ/cm 2 . As the photomask, a ceramic plate test chart (No. 1, negative type, manufactured by Ceramic Ceramics Insatsu) was used.
노광 후, 핫플레이트를 이용하여, 수지 조성물층을 표 중의 "PEB 온도(℃)"의 난에 기재된 온도에서, 300분간 가열했다. 또, "PEB 온도(℃)"의 난에 "-"으로 기재된 예에 있어서는, 가열을 행하지 않았다.After exposure, the resin composition layer was heated for 300 minutes using a hot plate at the temperature described in the column of "PEB temperature (°C)" in the table. In addition, in the example described with "-" in the column of "PEB temperature (°C)", heating was not performed.
상기 가열 후, 표 중의 "현상액"의 난에 기재된 현상액을 이용하여, 23℃에서 60초간 현상을 행하여 패턴을 형성했다.After the above heating, development was performed at 23° C. for 60 seconds using the developer described in the column of “developer” in the table to form a pattern.
상기 현상 후, PGMEA(프로필렌글라이콜모노메틸에터아세테이트)로 린스했다.After the development, it was rinsed with PGMEA (propylene glycol monomethyl ether acetate).
현상 후에 얻어진 패턴을 관찰하고, 하기 평가 기준에 따라 평가를 행했다. 평가 결과는, 표 중의 "해상성"의 난에 기재했다.The pattern obtained after development was observed and evaluated according to the following evaluation criteria. The evaluation results were described in the column of "Resolution" in the table.
-평가 기준--Evaluation standard-
A: 최소 개구 직경이 10μm 이하였다.A: The minimum opening diameter was 10 μm or less.
B: 최소 개구 직경이 10μm 초과 20μm 이하였다.B: The minimum opening diameter was more than 10 μm and 20 μm or less.
C: 최소 개구 직경이 20μm를 초과했다.C: The minimum opening diameter exceeded 20 μm.
<다층 적층 시의 1층째 치수 안정성 평가><Evaluation of dimensional stability of the first layer during multi-layer lamination>
〔1층째의 형성〕[Formation of the first layer]
각 실시예 및 비교예에 있어서, 각각, 실리콘 기판 상에 수지 조성물 또는 비교용 조성물을 스핀 코트법에 의하여 도포하여, 도포막을 형성했다. 이어서, 핫플레이트를 이용하여, 표의 "PB 온도(℃)"에 기재된 온도에서 300초간 가열 처리를 행하여, 수지 조성물층을 형성했다. 수지 조성물층의 두께는, 변성 후의 막두께가 표 중의 "변성 후 막두께(μm)"의 난에 기재된 값이 되도록, 적절히 변경했다.In each Example and Comparative Example, a resin composition or a comparative composition was applied onto a silicon substrate by spin coating to form a coating film. Then, using a hot plate, a heat treatment was performed for 300 seconds at the temperature described in "PB temperature (°C)" in the table to form a resin composition layer. The thickness of the resin composition layer was appropriately changed so that the film thickness after modification was the value described in the column of "film thickness after modification (μm)" in the table.
이어서, 수지 조성물층에 대하여, 스테퍼 노광 장치 FPA-3000i5+(Canon(주)제)를 사용하여, 선폭 20μm의 1:1 라인 앤드 스페이스 패턴이 형성된 포토마스크를 사용하여, 노광을 행했다. 노광량은 400mJ/cm2로 했다.Next, the resin composition layer was exposed using a stepper exposure apparatus FPA-3000i5+ (manufactured by Canon Co., Ltd.) using a photomask having a 1:1 line-and-space pattern with a line width of 20 μm. The exposure amount was 400 mJ/cm 2 .
노광 후, 핫플레이트를 이용하여, 수지 조성물층을 표 중의 "PEB 온도(℃)"의 난에 기재된 온도에서, 5분간 가열했다. 또, "PEB 온도(℃)"의 난에 "-"으로 기재된 예에 있어서는, 가열을 행하지 않았다.After exposure, the resin composition layer was heated for 5 minutes using a hot plate at the temperature described in the column of "PEB temperature (°C)" in the table. In addition, in the example described with "-" in the column of "PEB temperature (°C)", heating was not performed.
상기 가열 후, 표 중의 "현상액"의 난에 기재된 현상액을 이용하여, 23℃에서 60초간 현상을 행하여 패턴을 형성했다.After the above heating, development was performed at 23° C. for 60 seconds using the developer described in the column of “developer” in the table to form a pattern.
상기 현상 후, PGMEA(프로필렌글라이콜모노메틸에터아세테이트)로 린스했다.After the development, it was rinsed with PGMEA (propylene glycol monomethyl ether acetate).
상기 패턴에 대하여, 표 중의 "큐어 온도(℃)"에 기재된 온도, "큐어 시간(min)"에 기재된 시간으로 가열을 행하여, 1층째의 패턴을 얻었다.The pattern was heated at the temperature described in "cure temperature (°C)" and the time described in "cure time (min)" in the table to obtain a first-layer pattern.
"가열 수단"의 난에 "N2 오븐"이라고 기재된 예에 있어서는, Koyo제, CLH-21을 이용하여 가열을 행했다.In the example described as "N 2 Oven" in the column of "Heating Means", heating was performed using CLH-21 manufactured by Koyo.
또, "가열 수단"의 난에 "IR 오븐"이라고 기재된 예에 있어서는, 어드밴스 리코제, RTP-6을 이용하여 가열을 행했다.In addition, in the example described as "IR oven" in the column of "heating means", heating was performed using RTP-6 manufactured by Advance Reco.
〔2층째의 형성〕[Formation of the second layer]
각 실시예 및 비교예에 있어서, 각각, 상기 1층째의 경화물 상에, 재차, 동일한 수지 조성물 또는 비교용 조성물을 스핀 코트법에 의하여 도포하여, 도포막을 형성했다. 이어서, 핫플레이트를 이용하여, 표의 "PB 온도(℃)"에 기재된 온도에서 300초간 가열 처리를 행하여, 수지 조성물층을 형성했다. 수지 조성물층의 두께는, 변성 후의 막두께가 표 중의 "변성 후 막두께(μm)"의 난에 기재된 값이 되도록, 적절히 변경했다.In each Example and Comparative Example, the same resin composition or comparative composition was applied again on the first layer of the cured product by spin coating to form a coating film. Next, using a hot plate, a heat treatment was performed for 300 seconds at the temperature described in "PB temperature (°C)" in the table to form a resin composition layer. The thickness of the resin composition layer was appropriately changed so that the film thickness after modification was the value described in the column of "film thickness after modification (μm)" in the table.
이어서, 수지 조성물층에 대하여, 스테퍼 노광 장치 FPA-3000i5+(Canon(주)제)를 사용하여, 선폭 20μm의 1:1 라인 앤드 스페이스 패턴이 형성된 포토마스크를 사용하여, 노광을 행했다. 상기 1:1 라인 앤드 스페이스 패턴을 개재한 노광부는, 1층째에 있어서의 노광부에 대하여 라인부 및 스페이스부가 각각 직교하도록 설정했다. 노광량은 400mJ/cm2로 했다.Next, the resin composition layer was exposed using a stepper exposure apparatus FPA-3000i5+ (manufactured by Canon Co., Ltd.) using a photomask having a 1:1 line-and-space pattern with a line width of 20 μm. The exposed portion through the 1:1 line and space pattern was set so that the line portion and the space portion were orthogonal to the exposed portion in the first layer. The exposure amount was 400 mJ/cm 2 .
노광 후, 핫플레이트를 이용하여, 수지 조성물층을 표 중의 "PEB 온도(℃)"의 난에 기재된 온도에서, 5분간 가열했다. 또, "PEB 온도(℃)"의 난에 "-"으로 기재된 예에 있어서는, 가열을 행하지 않았다.After exposure, the resin composition layer was heated for 5 minutes using a hot plate at the temperature described in the column of "PEB temperature (°C)" in the table. In addition, in the example described with "-" in the column of "PEB temperature (°C)", heating was not performed.
상기 가열 후, 표 중의 "현상액"의 난에 기재된 현상액을 이용하여, 23℃에서 60초간 현상을 행하여 패턴을 형성했다.After the above heating, development was performed at 23° C. for 60 seconds using the developer described in the column of “developer” in the table to form a pattern.
상기 현상 후, PGMEA(프로필렌글라이콜모노메틸에터아세테이트)로 린스했다.After the development, it was rinsed with PGMEA (propylene glycol monomethyl ether acetate).
상기 패턴에 대하여, 표 중의 "큐어 온도(℃)"에 기재된 온도, "큐어 시간(min)"에 기재된 시간으로 가열을 행했다.The pattern was heated at the temperature described in "cure temperature (°C)" and the time described in "cure time (min)" in the table.
"가열 수단"의 난에 "N2 오븐"이라고 기재된 예에 있어서는, Koyo제, CLH-21을 이용하여 가열을 행하여, 2층째의 경화물을 얻었다.In the example described as "N 2 Oven" in the section of "Heating Means", heating was performed using CLH-21 manufactured by Koyo to obtain a second-layer cured product.
또, "가열 수단"의 난에 "IR 오븐"이라고 기재된 예에 있어서는, 어드밴스 리코제, RTP-6을 이용하여 가열을 행하여, 2층째의 경화물을 얻었다.Moreover, in the example described as "IR oven" in the column of "heating means", heating was performed using RTP-6 manufactured by Advanced Reco, to obtain a second layer cured product.
〔평가〕〔evaluation〕
상기 1층째의 경화물의 형성 직후(2층째의 형성에 있어서의 도포막의 형성 전)의 1층째의 경화물의 선폭(선폭 A), 및, 상기 2층째의 경화물의 형성 후 직후의 1층째의 경화물의 선폭(선폭 B)을 측정하고, 하기 식에 따라 치수 변동(%)을 산출했다. 상기 치수 변동의 값으로부터, 1층째의 치수 안정성을 하기 평가 기준에 따라 평가했다. 평가 결과는 "다층 적층 시의 1층째 치수 안정성 평가"의 난에 기재했다.The line width (line width A) of the first-layer cured product immediately after formation of the first-layer cured product (before formation of the coating film in the second-layer formation), and the first-layer cured product immediately after formation of the second-layer cured product The line width (line width B) was measured, and the dimensional variation (%) was calculated according to the following formula. Based on the value of the dimensional variation, the dimensional stability of the first layer was evaluated according to the following evaluation criteria. The evaluation results were described in the column of "Evaluation of dimensional stability of the first layer during multilayer lamination".
치수 변동(%)=|선폭 A-선폭 B|/선폭 A×100Dimension variation (%)=|line width A-line width B|/line width A×100
-평가 기준--Evaluation standard-
A: 치수 변동(%)이 5% 이하였다.A: The dimensional variation (%) was 5% or less.
B: 치수 변동(%)이 5%를 초과했다.B: The dimensional variation (%) exceeded 5%.
<다층 적층 시의 2층째 해상성 평가><Evaluation of second layer resolution when multilayer stacking>
상기 다층 적층 시의 1층째 치수 안정성 평가와 동일한 방법에 의하여, 1층째의 경화물 및 2층째의 경화물을 제작했다.A first-layer cured product and a second-layer cured product were produced by the same method as the first-layer dimensional stability evaluation at the time of multilayer lamination.
2층째의 경화물을 관찰하고, 하기 평가 기준에 따라 평가를 행했다. 평가 결과는, 표 중의 "다층 적층 시의 2층째 해상성 평가"의 난에 기재했다.The cured product of the second layer was observed and evaluated according to the following evaluation criteria. The evaluation results are described in the column of "Evaluation of second layer resolution during multilayer lamination" in the table.
-평가 기준--Evaluation standard-
A: 기재 표면과 패턴의 측면이 이루는 각인 테이퍼각이 80° 이상 90° 미만이며, 패턴의 박리가 확인되지 않았다.A: The taper angle, which is an angle formed between the surface of the substrate and the side surface of the pattern, was 80° or more and less than 90°, and peeling of the pattern was not observed.
B: 테이퍼각이 80° 미만이거나, 패턴의 단면 형상이 90°를 초과하는 테이퍼각을 이루는 역테이퍼 형상이거나, 또는, 패턴의 단면 형상이 잘록한 형상이지만, 패턴의 박리는 확인되지 않았다.B: The taper angle was less than 80°, the cross-sectional shape of the pattern was a reverse tapered shape with a taper angle exceeding 90°, or the cross-sectional shape of the pattern was constricted, but peeling of the pattern was not observed.
C: 패턴의 박리가 확인되었다.C: Peeling of the pattern was confirmed.
비교예 1에 관한 경화물의 제조 방법은, 폴리이미드 전구체가 산의 작용에 의하여 극성이 증대되는 반응을 발생하는 기를 갖지 않고, 이른바 네거티브형의 패턴 형성이 행해지고 있다. 이와 같은 예에 있어서는, 해상성이 뒤떨어지는 것을 알 수 있다.In the method for producing the cured product according to Comparative Example 1, the polyimide precursor does not have a group generating a reaction in which polarity is increased by the action of an acid, and so-called negative pattern formation is performed. In such an example, it can be seen that the resolution is poor.
<실시예 101><Example 101>
실시예 1에 있어서 사용한 수지 조성물을, 표면에 구리박층이 형성된 수지 기재의 구리박층의 표면에 스핀 코트법에 의하여 층상으로 적용하고, 100℃에서 300초간 건조했다. 막두께는 얻어지는 경화물의 막두께가 5μm가 되는 막두께로 했다. 그 후, 스테퍼((주)니콘제, NSR1505 i6)를 이용하여 노광했다. 노광은 마스크(패턴이 1:1 라인 앤드 스페이스이며, 선폭이 10μm인 바이너리 마스크)를 통하여, 파장 365nm로 행했다. 노광 후, 120℃에서 300초간 가열했다. 상기 가열 후, 실시예 1에서 이용한 현상액으로 현상하고, 실시예 1에서 이용한 린스액으로 린스하여, 층의 패턴을 얻었다.The resin composition used in Example 1 was applied in a layer form to the surface of a copper foil layer of a resin substrate having a copper foil layer formed thereon by a spin coating method, and dried at 100°C for 300 seconds. Film thickness was made into the film thickness from which the film thickness of the hardened|cured material obtained becomes 5 micrometers. After that, it was exposed using a stepper (manufactured by Nikon Co., Ltd., NSR1505i6). Exposure was performed at a wavelength of 365 nm through a mask (a binary mask with a 1:1 line-and-space pattern and a line width of 10 μm). After exposure, it heated at 120 degreeC for 300 second. After the heating, it was developed with the developer used in Example 1 and rinsed with the rinse solution used in Example 1 to obtain a layer pattern.
이어서, 질소 분위기하에서, 10℃/분의 승온 속도로 승온하고, 230℃에 도달한 후, 120분간 유지하며 층을 경화하여, 재배선층용 층간 절연막을 형성했다. 이 재배선층용 층간 절연막은, 절연성이 우수했다.Then, in a nitrogen atmosphere, the temperature was raised at a heating rate of 10°C/min, and after reaching 230°C, the layer was cured while holding for 120 minutes to form an interlayer insulating film for a redistribution layer. This interlayer insulating film for the redistribution layer was excellent in insulating properties.
또, 이들 재배선층용 층간 절연막을 사용하여 반도체 디바이스를 제조한 결과, 문제없이 동작하는 것을 확인했다.In addition, as a result of manufacturing semiconductor devices using these interlayer insulating films for redistribution layers, it was confirmed that they operated without problems.
Claims (14)
상기 막을 선택적으로 노광하는 노광 공정,
상기 노광 후의 막을 현상액을 이용하여 현상하여 패턴을 형성하는 현상 공정, 및,
상기 패턴을 변성시키는 변성 공정을 포함하고,
상기 수지가 폴리이미드 전구체이며,
상기 수지는 산의 작용에 의하여 극성이 증대되는 반응을 발생하는 기를 갖고,
상기 현상액의 전체 질량에 대한 유기 용제의 함유량이 80질량% 이상이며,
상기 변성에 의하여, 상기 수지 조성물이 포함하는 용제에 대하여 상기 패턴의 용해성이 저하되는, 경화물의 제조 방법.A film formation step of forming a film by applying a resin composition containing a resin, a compound that generates an acid by irradiation with actinic rays or radiation, and a solvent on a substrate;
An exposure step of selectively exposing the film to light;
A developing step of developing the film after exposure using a developer to form a pattern, and
A denaturation step of denaturing the pattern;
The resin is a polyimide precursor,
The resin has a group that generates a reaction in which polarity is increased by the action of an acid,
The content of the organic solvent relative to the total mass of the developer is 80% by mass or more,
The method for producing a cured product in which the solubility of the pattern in the solvent contained in the resin composition is reduced by the modification.
얻어지는 경화물의 막두께가 5μm 이상인, 경화물의 제조 방법.The method of claim 1,
The manufacturing method of the hardened|cured material whose film thickness of the hardened|cured material obtained is 5 micrometers or more.
상기 수지가 하기 식 (1)로 나타나는 반복 단위를 포함하는, 경화물의 제조 방법.
[화학식 1]
상기 식 (1) 중, R1은, 4가의 유기기를 나타낸다; 복수의 R1은 서로 동일해도 되고 상이해도 된다; R2는, 2가의 유기기를 나타낸다; 복수의 R2는 서로 동일해도 되고 상이해도 된다; R3은, 각각 독립적으로, 수소 원자 또는 유기기를 나타낸다.According to claim 1 or claim 2,
The manufacturing method of the hardened|cured material in which the said resin contains the repeating unit represented by following formula (1).
[Formula 1]
In the formula (1), R 1 represents a tetravalent organic group; A plurality of R 1 may be the same as or different from each other; R 2 represents a divalent organic group; A plurality of R 2 may be the same as or different from each other; R 3 each independently represents a hydrogen atom or an organic group.
상기 식 (1)로 나타나는 반복 단위가 상기 산의 작용에 의하여 극성이 증대되는 반응을 발생하는 기를 갖는, 경화물의 제조 방법.The method of claim 3,
The method for producing a cured product, wherein the repeating unit represented by the formula (1) has a group generating a reaction in which polarity is increased by the action of the acid.
상기 수지 조성물이 산포착제를 더 포함하는, 경화물의 제조 방법.The method according to any one of claims 1 to 4,
The method for producing a cured product, wherein the resin composition further comprises a scattering agent.
상기 현상액이, 한센 용해도 파라미터의 수소 결합항 dH의 값이 8 이하인 유기 용제를 80질량% 이상 포함하는, 경화물의 제조 방법.The method according to any one of claims 1 to 5,
The method for producing a cured product, wherein the developer contains 80% by mass or more of an organic solvent having a hydrogen bond term dH value of 8 or less in the Hansen solubility parameter.
상기 산의 작용에 의하여 극성이 증대되는 반응을 발생하는 기가 하기 식 (A-1) 또는 하기 식 (A-2)로 나타나는 기인, 경화물의 제조 방법.
[화학식 2]
식 (A-1) 중, RA1~RA5는 각각 독립적으로, 수소 원자 또는 1가의 유기기를 나타내고, RA1~RA5 중 적어도 2개가 결합하여 환 구조를 형성하고 있어도 되며, *는 다른 구조와의 결합 부위를 나타낸다;
식 (A-2) 중, RA6~RA8은 각각 독립적으로, 1가의 유기기를 나타내고, RA6~RA8 중 적어도 2개가 결합하여 환 구조를 형성하고 있어도 되며, *는 다른 구조와의 결합 부위를 나타낸다.The method according to any one of claims 1 to 6,
A method for producing a cured product, wherein the group generating a reaction in which polarity is increased by the action of the acid is a group represented by the following formula (A-1) or the following formula (A-2).
[Formula 2]
In formula (A-1), R A1 to R A5 each independently represent a hydrogen atom or a monovalent organic group, and at least two of R A1 to R A5 may be bonded to form a ring structure, and * indicates another structure indicates a binding site with;
In formula (A-2), R A6 to R A8 each independently represent a monovalent organic group, and at least two of R A6 to R A8 may be bonded to form a ring structure, and * is a bond with another structure. indicates the area.
상기 변성 공정에 있어서, 상기 패턴의 가열이 행해지는, 경화물의 제조 방법.According to any one of claims 1 to 7,
The method for producing a cured product in which the pattern is heated in the modification step.
상기 노광 공정 후, 상기 현상 공정 전에, 상기 막을 가열하는 공정을 더 포함하는, 경화물의 제조 방법.The method according to any one of claims 1 to 8,
The method for producing a cured product, further comprising a step of heating the film after the exposure step and before the developing step.
복수 회 행해지는 경화물의 제조 방법의 사이에, 경화물로 이루어지는 층 상에 금속층을 형성하는 금속층 형성 공정을 더 포함하는, 적층체의 제조 방법.The method of claim 10,
The manufacturing method of the laminated body which further includes the metal layer formation process of forming a metal layer on the layer which consists of hardened|cured material between the manufacturing method of a hardened|cured material performed multiple times.
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