KR20220128303A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

A process film having a uniform film thickness is formed on a substrate. A substrate processing device for forming a processing film on a surface of the substrate comprises: a spin chuck (21) as a substrate holding unit holding the substrate coated with a processing liquid before drying for forming the processing film; and a gas supply unit (40) supplying a first gas (F1) of a first temperature higher than room temperature to the periphery of the surface of the substrate held in the substrate holding unit.

Description

Substrate processing apparatus and substrate processing method {SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD}

The present disclosure relates to a substrate processing apparatus and a substrate processing method.

In Patent Document 1, it is described that the projections are removed by supplying the solvent of the coating liquid to the projections of the coating film formed in the peripheral portion of the surface of the substrate.

Japanese Patent Laid-Open No. 2020-181855

The present disclosure provides a technique for forming a processing film having a uniform film thickness on a substrate.

A substrate processing apparatus according to an aspect of the present disclosure is a substrate processing apparatus for forming a processing film on a surface of a substrate, comprising: a substrate holding unit for holding a substrate to which a processing liquid before drying for forming the processing film is applied; It has a gas supply part including the 1st nozzle part which supplies the 1st gas of the 1st temperature higher than normal temperature with respect to the periphery of the surface of the said board|substrate held by the holding part.

According to the present disclosure, a technique for forming a processing film having a uniform film thickness on a substrate is provided.

1 is a perspective view showing an example of a substrate processing system.
2 is a side view schematically illustrating an example of the interior of a substrate processing system.
It is a schematic diagram which shows an example of an application|coating unit.
It is a schematic diagram which shows an example of the gas supply nozzle in an application|coating unit.
Fig. 5 (a), Fig. 5 (b) is a schematic diagram showing an example of the opening of the gas supply nozzle.
It is a schematic diagram which shows an example of the control of the gas supply part by a control apparatus.
Fig. 7 is a block diagram showing an example of the hardware configuration of the control device.
8 is a flowchart showing an example of a substrate processing method.
Fig. 9(a) is a diagram showing an example of a state in which a hump is formed, and Fig. 9(b) is a diagram showing an example of a result of processing by the application unit.
10A and 10B are diagrams showing an example of a modification of the application unit.
It is a figure which shows an example of the modification of the application|coating unit.
It is a figure which shows an example of the modification of the application|coating unit.

Hereinafter, various exemplary embodiments will be described.

In one exemplary embodiment, a substrate processing apparatus is a substrate processing apparatus for forming a processing film on the surface of a substrate, comprising: a substrate holding unit for holding a substrate to which a processing liquid before drying for forming the processing film is applied; and a gas supply portion including a first nozzle portion for supplying a first gas having a first temperature higher than room temperature to a peripheral portion of the surface of the substrate held by the substrate holding portion.

According to the above substrate processing apparatus, the first gas having a first temperature higher than normal temperature is supplied to the periphery of the surface of the substrate held by the substrate holding unit. When the first gas is supplied, the processing liquid is dried in a state in which the processing liquid at the periphery of the substrate and the first gas are in contact, so that formation of a hump at the periphery is suppressed. For this reason, it becomes possible to form a process film with a uniform film thickness on a board|substrate.

The gas supply unit may be configured to intermittently supply the first gas to each position of the periphery of the substrate.

By setting it as the structure in which the 1st gas is supplied intermittently, formation of the hump in a peripheral part is further suppressed, and it becomes possible to form a process film with a more uniform film thickness on a board|substrate.

The first nozzle unit may be configured to supply the first gas from above the periphery of the substrate to the periphery of the substrate.

By supplying the first gas from above the periphery to the periphery by the first nozzle unit, the formation of a hump at the periphery is further suppressed, and it becomes possible to form a processing film with a more uniform film thickness on the substrate.

The gas supply unit may alternately supply the first gas and the second gas having a second temperature lower than the first temperature to each position of the periphery of the substrate.

By alternately supplying the first gas and the second gas having a second temperature lower than the first temperature to each position of the periphery, the drying rate of the processing liquid in the periphery is adjusted, so that the formation of a hump in the periphery is suppressed. For this reason, it becomes possible to form a process film with a more uniform film thickness on a board|substrate.

The said gas supply part is good also as an aspect which can supply the said 1st gas and the said 2nd gas simultaneously with respect to mutually different positions on the surface of the said board|substrate.

The gas supply unit can supply the first gas and the second gas to different positions on the surface of the substrate at the same time, so that the first gas and the second gas can be quickly supplied to each position of the substrate.

The said gas supply part is good also as an aspect which further has a 2nd nozzle part which supplies the said 2nd gas provided above the periphery of the said board|substrate.

By separately having a 2nd nozzle part, supply of 1st gas and 2nd gas can be performed independently.

It is good also as an aspect in which the said 1st nozzle part and the said 2nd nozzle part each have a plurality, and above the periphery of the said board|substrate, the said 1st nozzle part and the said 2nd nozzle part are alternately arrange|positioned along the said periphery.

Above the periphery of the substrate, when the first nozzle portion and the second nozzle portion are alternately arranged along the periphery, a configuration in which the first gas and the second gas are easily supplied alternately can be realized. For example, by relatively moving the substrate along the extension direction of the periphery, it is possible to realize a configuration in which the first gas and the second gas are alternately supplied to each position of the periphery.

a first pipe for supplying the first gas to the first nozzle part; a first temperature adjusting part for adjusting the temperature of the gas flowing through the first pipe to the first temperature; It is good also as an aspect which has the 2nd piping which supplies 2nd gas, and the 2nd temperature adjustment part which adjusts the gas which flows through the said 2nd piping to the said 2nd temperature.

By setting it as said structure, temperature adjustment of 1st base|substrate and 2nd base|substrate can be performed independently.

The first nozzle unit may be configured to alternately supply the first gas and the second gas to the surface of the substrate.

With the above configuration, the first gas and the second gas can be alternately supplied from one nozzle unit, and the first gas and the second gas can be supplied to each position of the substrate by one nozzle. have.

a pipe for supplying the gas to the first nozzle unit, and a temperature adjusting unit for adjusting a temperature of the gas supplied from the first nozzle unit to the substrate, wherein the temperature adjusting unit includes a temperature of the gas flowing through the pipe By switching between the first temperature and the second temperature, the temperature of the gas supplied to the substrate may be adjusted.

By setting it as said structure, 1st gas and 2nd gas can be prepared by temperature adjustment by one temperature adjusting part, and can be supplied.

The temperature adjusting unit switches the temperature of the gas flowing through the pipe between the first temperature and the second temperature by switching an on state and an off state of a power source for heating the gas flowing through the pipe. can be done with

Moreover, the said temperature adjustment part is good also as an aspect which switches the temperature of the gas which flows through the said piping to the said 1st temperature and the said 2nd temperature by changing the setting of the heater which heats the gas flowing through the said piping.

a first pipe for supplying the first gas to the first nozzle part; a second pipe for supplying the second gas to the first nozzle part; and a first pipe supplied to the substrate from the first nozzle part. having a temperature adjusting unit for adjusting the temperature of the gas, wherein the temperature adjusting unit switches a pipe for supplying gas to the first nozzle unit between the first pipe and the second pipe, thereby supplying the substrate to the substrate It is good also as an aspect which adjusts the temperature of the gas used.

By setting it as said structure, switching between 1st gas and 2nd gas can be performed quickly only by switching the piping which supplies gas with respect to the 1st nozzle part.

The said board|substrate holding part is good also as an aspect which is a rotation mechanism which adsorb|sucks the said board|substrate and rotates horizontally.

In addition, a cup disposed around the substrate holding unit to surround the periphery of the substrate supported by the substrate holding unit is further provided, wherein the gas supply unit includes: It is good also as an aspect which supplies the said 1st gas with respect to a peripheral part.

Moreover, the said board|substrate holding part is good also as an aspect which is a conveyance mechanism which conveys the said board|substrate in a horizontal direction.

In one exemplary embodiment, the substrate processing method is a substrate processing method for forming a processing film on the surface of a substrate, wherein the periphery of the surface of the substrate to which the processing liquid before drying for forming the processing film is applied is subjected to room temperature. and supplying a first gas at a first temperature that is higher in temperature.

According to the above substrate processing method, a first gas having a first temperature higher than normal temperature is supplied to the periphery of the surface of the substrate. When the first gas is supplied, the processing liquid is dried in a state in which the processing liquid at the periphery of the substrate and the first gas are in contact, so that formation of a hump at the periphery is suppressed. For this reason, it becomes possible to form a process film with a uniform film thickness on a board|substrate.

Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In addition, in each figure, the same code|symbol shall be attached|subjected about the same or equivalent part.

[Substrate processing system]

The substrate processing system 1 shown in FIG. 1 is a system which performs formation of the photosensitive film with respect to the workpiece|work W, exposure of the said photosensitive film, and development of the said photosensitive film. The workpiece W to be processed is, for example, a substrate or a substrate in a state in which a film, a circuit, etc. are formed by performing a predetermined process. The substrate included in the work W is, for example, a wafer containing silicon. The work W (substrate) may be formed in a circular shape. The workpiece W to be processed may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or the like, or an intermediate obtained by performing a predetermined process on these substrates or the like. The photosensitive film is, for example, a resist film.

The substrate processing system 1 includes a coating/developing apparatus 2 , an exposure apparatus 3 , and a control apparatus 100 (control unit). The exposure apparatus 3 is an apparatus for exposing a resist film (photosensitive film) formed on the work W (substrate). Specifically, the exposure apparatus 3 irradiates an energy ray to the exposure target portion of the resist film by a method such as immersion exposure. The coating/developing apparatus 2 applies a resist (processing liquid) to the surface of the workpiece W to form a resist film before exposure treatment by the exposure apparatus 3, and develops the resist film after the exposure treatment. do

<Substrate processing device>

Hereinafter, as an example of a substrate processing apparatus, the structure of the coating/developing apparatus 2 is demonstrated. 1 and 2 , the coating/developing apparatus 2 includes a carrier block 4 , a processing block 5 , and an interface block 6 .

The carrier block 4 introduces the workpiece W into the coating/developing device 2 and takes out the workpiece W from the coating/developing device 2 . For example, the carrier block 4 can support the some carrier C for the workpiece|work W, and has built-in the conveyance apparatus A1 containing a transmission arm. The carrier C accommodates a plurality of circular workpieces W, for example. The conveying apparatus A1 takes out the workpiece|work W from the carrier C, passes it to the processing block 5, and receives the workpiece|work W from the processing block 5, and returns it into the carrier C. The processing block 5 has a plurality of processing modules 11 , 12 , 13 , 14 .

The processing module 11 incorporates the application unit U1, the heat processing unit U2, and the conveying apparatus A3 which conveys the workpiece|work W to these units. The processing module 11 forms an underlayer film on the surface of the work W by the application unit U1 and the heat processing unit U2 . The application unit U1 applies the processing liquid for forming an underlayer film on the work W. The heat processing unit U2 performs various heat treatments accompanying the formation of the underlayer film.

The processing module 12 incorporates an application unit U1, a heat processing unit U2, and a conveying device A3 for conveying the workpiece W to these units. The processing module 12 performs liquid processing including forming a resist film on the underlayer film by the application unit U1 and the heat processing unit U2 . The application unit U1 applies a processing liquid (resist) for forming a resist film on the underlayer film. The heat treatment unit U2 performs various heat treatments accompanying the formation of the film. Moreover, the application unit U1 has a function of forming a protective film (processing film) with a resist solution on the periphery of the work W.

The processing module 13 incorporates an application unit U1, a heat processing unit U2, and a conveying device A3 for conveying the workpiece W to these units. The processing module 13 forms an upper layer film on the resist film by the application unit U1 and the heat processing unit U2 . The application unit U1 applies a liquid for forming an upper layer film on the resist film. The heat treatment unit U2 performs various heat treatments accompanying the formation of the upper layer film.

The processing module 14 incorporates an application unit U1, a heat processing unit U2, and a conveying device A3 for conveying the workpiece W to these units. The processing module 14 performs, by the application unit U1 and the thermal processing unit U2 , the developing processing of the resist film to which the exposure processing has been performed, and the thermal processing accompanying the development processing. The application unit U1 applies a developer on the surface of the exposed work W, and then rinses it off with a rinsing liquid to develop the resist film. The thermal processing unit U2 performs various thermal processing accompanying the developing processing. Specific examples of the heat treatment include heat treatment (PEB: Post Exposure Bake) before developing treatment, heat treatment after developing treatment (PB: Post Bake), and the like.

A shelf unit U10 is provided on the carrier block 4 side in the processing block 5 . The shelf unit U10 is divided into a plurality of cells arranged in the vertical direction. In the vicinity of the shelf unit U10, a conveying device A7 including an elevating arm is provided. The conveying apparatus A7 raises/lowers the workpiece|work W between the cells of the shelf unit U10.

A shelf unit U11 is provided on the interface block 6 side in the processing block 5 . The shelf unit U11 is divided into a plurality of cells arranged in the vertical direction.

The interface block 6 transfers the workpiece W with the exposure apparatus 3 . For example, the interface block 6 incorporates a transfer device A8 including a transfer arm, and is connected to the exposure apparatus 3 . The conveying apparatus A8 delivers the workpiece|work W arrange|positioned on the shelf unit U11 to the exposure apparatus 3 . The conveyance apparatus A8 receives the workpiece|work W from the exposure apparatus 3 and returns it to the shelf unit U11.

(applying unit)

The application unit U1 of the processing module 12 will be described in detail. As shown in FIG. 3 , the application unit U1 of the processing module 12 includes a spin chuck 21 (a substrate holding unit), a rotation drive unit 22 , a support pin 23 , and a guide ring 25 . and a cup 26 , an exhaust pipe 28 , and a drain port 29 . In addition, the application unit U1 includes a treatment liquid supply unit 31 . The processing liquid supply unit 31 has a function of supplying a processing liquid for forming a resist film to the surface of the work W. In addition, the application unit U1 further has a gas supply unit 40 .

The spin chuck 21 holds the workpiece W horizontally. The spin chuck 21 is connected to the rotation drive unit 22 via a shaft extending in the vertical direction (vertical direction). The rotation driving unit 22 rotates the spin chuck 21 at a predetermined rotation speed based on a control signal output from the control device 100 .

The support pins 23 are pins capable of supporting the back surface of the work W, and are provided, for example, around the shaft of the spin chuck 21 in three pieces. The support pin 23 can be raised and lowered by an elevating mechanism (not shown). The work W is transferred between the transfer mechanism (not shown) of the work W and the spin chuck 21 by the support pin 23 .

The guide ring 25 is provided below the work W held by the spin chuck 21 and has a function of guiding the processing liquid supplied to the surface of the work W toward the drain port. In addition, a cup 26 for suppressing scattering of the processing liquid is provided so as to surround the outer periphery of the guide ring 25 . The upper side of the cup 26 is open so that the transfer of the workpiece W to the spin chuck 21 is possible. Moreover, the upper end 26a of the cup 26 is located above the work W. A space 27 serving as a liquid discharge path is formed between the circumferential surface of the cup 26 and the outer periphery of the guide ring 25 . Further, an exhaust pipe 28 having an exhaust port 28a and a drain port 29 for discharging the liquid moving in the space 27 are provided below the cup 26 .

The processing liquid supply unit 31 discharges the processing liquid toward the surface of the work W from above the work W supported by the spin chuck 21 .

The processing liquid supply unit 31 includes a nozzle 31a, a processing liquid supply source 31b, and a pipe 31c. An on-off valve controlled by the control device 100 may be provided on the pipe 31c of the processing liquid supply unit 31 . The supply/stop of the processing liquid may be switched by switching the open state and the closed state of the on-off valve based on the control signal from the control device 100 . Examples of the processing liquid supplied from the processing liquid supply unit 31 include a processing liquid (eg, resist liquid) used when forming a protective film on the periphery of the work W .

The nozzle 31a of the processing liquid supply unit 31 is mounted on an arm extending in the horizontal direction, for example, and is movable in the horizontal direction. Moreover, the nozzle 31a is movable also in an up-down direction. That is, although not shown in FIG. 3, the moving mechanism for moving the nozzle 31a in a horizontal direction and an up-down direction is provided in the application|coating unit U1. And the nozzle 31a can move between the stand-by position outside the cup 26, and on the workpiece|work W by the operation|movement of a movement mechanism.

The gas supply unit 40 has a function of supplying a gas toward the periphery of the work W. The gas supply by the gas supply unit 40 is performed for the purpose of controlling the surface shape of the processing liquid (resist liquid) supplied to the surface of the work W. The gas supply unit 40 supplies the first gas F1 and the second gas F2 as two types of gases having different temperatures. For this reason, the gas supply part 40 is comprised including the 1st gas supply part 41 and the 2nd gas supply part 42. As shown in FIG. In addition, the temperature of the first gas F1 is referred to as a first temperature, and the temperature of the second gas F2 is referred to as a second temperature. In the application unit U1, the first gas F1 and the second gas F2 are alternately supplied to each position of the periphery of the surface of the workpiece W, thereby drying the processing liquid at the periphery of the workpiece W. Adjust the status.

The first gas supply unit 41 includes a nozzle 41a (a first nozzle unit), a pipe 41b (a first pipe), a temperature control unit 41c (a first temperature control unit), an on/off valve 41d, and , and a gas source 45 . In addition, the gas supply source 45 functions as the gas supply source 45 of the second gas supply unit 42 . The temperature adjustment part 41c and the on-off valve 41d are provided on the pipe 41b. The temperature adjusting unit 41c introduces the gas flowing through the pipe 41b and supplies the gas after temperature adjustment to the downstream pipe 41b. Moreover, the on-off valve 41d has a function of switching supply/stop of gas by switching an open state and a closed state.

Also about the 2nd gas supply part 42, similarly to the 1st gas supply part 41, the nozzle 42a (2nd nozzle part), the piping 42b (2nd piping), and the temperature adjustment part 42c (th 2 temperature adjustment part), the on-off valve 42d, and the gas supply source 45 are comprised. The temperature adjusting part 42c and the on-off valve 42d are provided on the pipe 42b. The temperature adjustment part 42c introduces the gas flowing through the pipe 42b, and supplies the gas after temperature adjustment to the downstream pipe 42b. In addition, the on-off valve 42d has a function of switching supply/stop of gas by switching the open state and the closed state.

When the same type of gas is supplied as the first gas F1 and the second gas F2, the gas supply source 45 can be shared. As the first gas F1 and the second gas F2, an inert gas such as nitrogen (N ₂ ) or argon (Ar) can be used. In addition, the 1st base|substrate F1 and the 2nd base|substrate F2 may be mutually different gases. In this case, the gas supply source of the first gas supply unit 41 and the gas supply source of the second gas supply unit 42 are separately prepared.

The first gas F1 and the second gas F2 have different temperatures at the time of supplying the workpiece W to each other. As an example, the temperature of the first gas F1 may be 50°C to 200°C (warm air), and the temperature of the second gas F2 may be 15°C to 30°C (cold air). At least, the temperature of the first substrate F1 is set higher than the normal temperature (the ambient temperature in the processing space where the work W is disposed is referred to as 'room temperature'). In this embodiment, it demonstrates on the assumption that the temperature of the 1st base|substrate F1 is higher than the 2nd base|substrate F2.

3 schematically shows a state in which the nozzle 42a of the second gas supply unit 42 is disposed inside the work W with respect to the nozzle 41a of the first gas supply unit 41, The first base F1 and the second base F2 are alternately supplied to each position of the peripheral portion W1 (see FIG. 4 ) of the work W. As shown in FIG. Therefore, the actual arrangement|positioning of the nozzles 41a, 42a differs from the form shown in FIG.

As an example, the nozzles 41a and 42a may be attached to, for example, an arm extending in the horizontal direction, and may be movable in the horizontal direction and the vertical direction. For example, a movement mechanism for moving the nozzles 41a and 42a in the horizontal direction and the vertical direction, respectively, may be provided. In addition, by the operation|movement of a movement mechanism, the nozzle 41a, 42a may be movable between the stand-by position outside the cup 26, and the work W top.

In addition, instead of providing the nozzles 41a, 42a individually, you may use the gas supply nozzle 50 which integrated the nozzles 41a, 42a. 4 shows an example of the gas supply nozzle 50 . 5 schematically shows a configuration example in the vicinity of the discharge port of the gas supply nozzle 50 .

The gas supply nozzle 50 includes an annular body portion 51 and four nozzle portions 52a, 52b, 52c, and 52d. The nozzle parts 52a and 52c function as a nozzle 41a for supplying the first gas F1, and the nozzle parts 52b and 52d function as a nozzle 42a for supplying the second gas F2.

The body portion 51 has an annular structure having a diameter corresponding to the outer periphery shape of the work W, and is sized to overlap with the peripheral portion W1 of the work W in plan view. A flow path connected to the pipe 41b related to the first body F1 and a flow path connected to the pipe 42b related to the second body F2 are provided inside the main body 51 . Although the state in which the piping 41b, 42b is connected to the upper part of the main body part 51 is shown typically in FIG. 3, the connection position of the gas supply nozzle 50 and the piping 41b, 42b is specifically limited. and the shape of the internal flow path may be changed according to the connection position.

When supplying the first gas F1 and the second gas F2 to the workpiece W, the main body 51 is, as shown in FIG. 4 , the workpiece W above the workpiece W in a plan view. It becomes an arrangement that overlaps with (W). In addition, although the state which the gas supply nozzle 50 and the workpiece|work W spaced apart in the up-down direction is shown in FIG. 4, when supplying the 1st gas F1 and the 2nd gas F2, it is shown in FIG. The gas supply nozzle 50 is in a state closer to the work W than the state.

The nozzle portions 52a, 52b, 52c, 52d are mounted below the body portion 51, and along the circumferential direction, on the circumference, such that the nozzle portions 52a, 52b, 52c, 52d are arranged in this order. For example, they are arranged at equal intervals. In the example shown in FIG. 4, the nozzle parts 52a, 52c oppose across the center of the body part 51 (corresponding to the center of the workpiece|work W), and the nozzle parts 52b, 52d are the body parts. Each nozzle part is arrange|positioned so that it may oppose across the center of 51 (corresponding to the center of the workpiece|work W). All of the nozzle portions 52a, 52b, 52c, and 52d have an arc shape along the annular body portion 51 . In addition, the length of the nozzle parts 52a, 52b, 52c, 52d along the arc shape is not specifically limited, It can change suitably in the range which nozzle parts 52a, 52b, 52c, 52d do not overlap with each other.

The nozzle portions 52a , 52b , 52c , and 52d each have a shape opened downward in order to supply the first gas F1 or the second gas F2 to the work W, respectively.

5A and 5B show examples of the opening 52x formed on the lower surface of the nozzle part 52a. Fig. 5(a) shows an example in which the opening 52x is a slit shape extending along the longitudinal direction of the arc-shaped nozzle portion 52a. 5B shows an example in which the opening 52x has a shape in which a plurality of small holes 52y arranged along the longitudinal direction of the arc-shaped nozzle portion 52a are combined. The shape of the opening 52x of the nozzle part 52a may be a slit shape shown in FIG. may be In addition, although the nozzle part 52a is illustrated in FIG. 5, the nozzle parts 52b-52d also have the same opening 52x as the nozzle part 52a shown in FIG.

In the gas supply nozzle 50, the nozzle parts 52a-52d which have the opening 52x as shown in FIG. 4 below the main-body part 51 are arrange|positioned in an annular shape as shown in FIG. The gas supply systems of the 1st gas F1 and the 2nd gas F2 with respect to this gas supply nozzle 50 are mutually independent as shown in FIG. For this reason, in the gas supply nozzle 50, the supply of the first gas F1 from the nozzle parts 52a and 52c and the supply of the second gas F2 from the nozzle parts 52b and 52d are performed simultaneously. can

When the work W disposed below is rotated in a state in which the nozzle portions 52a to 52d respectively supply the first gas F1 or the second gas F2, the peripheral portion W1 of the work W is rotated. Each position (each point) passes sequentially below the nozzle parts 52a-52d. The first gas F1 and the second gas F2 supplied from the gas supply nozzle 50 alternately contact each other. As long as the rotation of the workpiece W continues, this state continues.

The control device 100 controls the coating/developing device 2 . The control device 100 performs liquid processing on the workpiece W by the processing module 12 according to a predetermined condition. The control device 100 supplies the processing liquid to the workpiece W by the processing liquid supply unit 31 based on a predetermined condition, for example, and also controls the rotation of the workpiece W at that time. In addition, as shown in FIG. 6 , the control device 100 includes a temperature control unit 41c and an on/off valve 41d of the first gas supply unit 41 , and a temperature control unit 42c of the second gas supply unit 42 . and the on-off valve 42d. For example, each part of the 1st gas supply part 41 and each part of the 2nd gas supply part 42 are controlled, controlling rotation of the workpiece|work W, etc. based on the conditions of a process.

The control device 100 may be configured by a plurality of function modules for executing the liquid processing described above. Each function module is not limited to being realized by the execution of a program, and may be realized by a dedicated electric circuit (eg, a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) integrating the same. do.

The hardware of the control device 100 may be configured by, for example, one or a plurality of control computers. As shown in FIG. 7 , the control device 100 includes a circuit 201 as a configuration on hardware. The circuit 201 may be constituted by an electric circuit element (circuitry). The circuit 201 may include a processor 202 , a memory 203 , a storage 204 , a driver 205 , and an input/output port 206 .

The processor 202 cooperates with at least one of the memory 203 and the storage 204 to execute a program, and input/output signals via the input/output port 206 to configure each of the above-described functional modules. The memory 203 and the storage 204 store various types of information and programs used in the control device 100 . The driver 205 is a circuit for driving various devices of the coating/developing apparatus 2 , respectively. The input/output port 206 inputs/outputs signals between the driver 205 and the respective units constituting the coating/developing apparatus 2 .

The substrate processing system 1 may be equipped with the one control apparatus 100, and may be equipped with the controller group (control part) comprised from the some control apparatus 100 . When the substrate processing system 1 is provided with a controller group, for example, each of a plurality of function modules may be realized by one mutually different control device, or a combination of two or more control devices 100 . may be realized by When the control device 100 is configured by a plurality of computers (circuit 201), a plurality of function modules may be implemented by one computer (circuit 201), respectively. In addition, the control apparatus 100 may be implemented by the combination of two or more computers (circuit 201). The control device 100 may include a plurality of processors 202 . In this case, a plurality of function modules may be implemented by one processor 202, respectively, or may be realized by a combination of two or more processors 202. A part of the function of the control apparatus 100 of the substrate processing system 1 is provided in an apparatus different from the substrate processing system 1, and is connected to the substrate processing system 1 via a network, and in this embodiment You may implement various operation|movements in this. For example, if the functions of the processor 202 , the memory 203 , and the storage 204 of the plurality of substrate processing systems 1 are gathered and realized as one or a plurality of separate devices, the plurality of substrate processing systems 1 ) It also becomes possible to remotely and collectively manage and control information and operations of

The processing of the workpiece|work W performed in the said substrate processing system 1 is demonstrated. The control device 100 controls the coating/developing device 2 to, for example, perform processing on the workpiece W in the following procedure. First, the control device 100 controls the transport device A1 to transport the workpiece W in the carrier C to the shelf unit U10 , and transfers the workpiece W to the cell for the processing module 11 . The conveying apparatus A7 is controlled so that it may arrange|position.

Next, the control device 100 controls the transport device A3 to transport the workpiece W of the shelf unit U10 to the application unit U1 and the heat processing unit U2 in the processing module 11 . Further, the control device 100 controls the application unit U1 and the heat treatment unit U2 to form an underlayer film on the surface of the work W. Thereafter, the control device 100 controls the transport device A3 to return the workpiece W with the underlayer film formed thereon to the shelf unit U10 , and the transport device to place the workpiece W on the processing module 12 . (A7) is controlled.

Next, the control device 100 controls the transport device A3 to transport the workpiece W of the shelf unit U10 to the application unit U1 and the heat processing unit U2 in the processing module 12 . The control device 100 controls the application unit U1 and the heat treatment unit U2 to form a resist film on the underlayer film of the work W. An example of the liquid processing method performed in the processing module 12 will be described later. Thereafter, the control device 100 controls the transport device A3 to return the work W to the shelf unit U10 , and the transport device to place the workpiece W in the cell for the processing module 13 . (A7) is controlled.

Next, the control device 100 controls the transport device A3 to transport the workpiece W of the shelf unit U10 to the application unit U1 and the heat processing unit U2 in the processing module 13 . Further, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form an upper layer film on the resist film of the work W. Thereafter, the control device 100 controls the transport device A3 to transport the work W to the shelf unit U11 .

Next, the control apparatus 100 controls the conveying apparatus A8 to send the workpiece|work W accommodated in the shelf unit U11 to the exposure apparatus 3 . And in the exposure apparatus 3, the exposure process is performed to the resist film formed in the workpiece|work W. Thereafter, the control device 100 receives the workpiece W subjected to the exposure process from the exposure device 3 , and transfers the workpiece W to the cell for the processing module 14 in the shelf unit U11 . The conveying apparatus A8 is controlled so that it may arrange|position.

Next, the control device 100 controls the transport device A3 to transport the workpiece W of the shelf unit U11 to the heat processing unit U2 of the processing module 14 . Then, the control device 100 controls the application unit U1 and the heat treatment unit U2 to execute the heat treatment accompanying the developing treatment and the developing treatment. As described above, the control apparatus 100 completes the substrate processing with respect to one workpiece W.

[Substrate processing method]

Next, an example of a substrate processing method performed in the processing module 12 will be described. Here, as a substrate processing method, a method of forming a resist film on the peripheral edge W1 of the surface of the work W is described.

8 is a flowchart showing an example of a procedure for forming a resist film on the surface of the work W. As shown in FIG.

As shown in FIG. 8 , the control device 100 executes step S01. In step S01, the control device 100 controls the transfer device A3 and the support pins 23 of the application unit U1, and transfers the workpiece W to the spin chuck ( 21) is supported on the top. Thereafter, the control device 100 starts the rotation of the work W by driving the rotation driving unit 22 . As an example, the rotation speed of the workpiece W at this time is about 100 rpm to 2000 rpm.

Next, the control device 100 executes step S02. In step S02 , the control device 100 rotates the work W by driving the rotation driving unit 22 , and controls the processing liquid supply unit 31 to move the work W from the nozzle 31a. Discharge the treatment liquid toward the center of the surface of the The solvent supplied to the center of the surface of the work W is diffused in the radial direction of the work W by the rotation of the work W. As a result, a state in which the treatment liquid (resist liquid) adheres to the entire surface of the work W is formed. The control device 100 stops discharging of the processing liquid from the processing liquid supply unit 31 at a timing when a predetermined amount of the processing liquid is discharged from the nozzle 31a .

Thereafter, the control device 100 executes step S03. In step S03 , the control device 100 controls the first gas supply unit 41 and the second gas supply unit 42 of the gas supply unit 40 to control the periphery W1 of the workpiece W. The first gas F1 (warm air) and the second gas F2 (cold air) are supplied. Specifically, the control device 100 controls the first gas F1 from the first gas supply unit 41 of the gas supply unit 40 in a state in which the workpiece W is rotated by driving the rotation driving unit 22 . Supply and supply of the second gas F2 from the second gas supply unit 42 are executed. As a result, the first gas F1 is supplied from the nozzle portions 52a and 52c functioning as the nozzles 41a among the gas supply nozzles 50 and from the nozzle portions 52b and 52d functioning as the nozzles 42a. The second gas F2 is supplied. Thereby, each position of the periphery W1 of the workpiece|work W comes into contact with the 1st base|substrate F1 and the 2nd base|substrate F2 alternately, respectively. In addition, the supply amount of the first gas F1 and the second gas F2 in step S03 is, for example, the wind speed from the nozzle parts 52a to 52d is 0.05 m/sec to 1 m/sec. You can adjust it as much as possible. The wind speed from the nozzle portions 52a to 52d may be different from each other.

In addition, the rotational speed of the work W is, for example, the first gas F1 (warm air) and the second gas F2 (cold air) with respect to each position of the peripheral portion W1 of the work W. For example, it can be adjusted to the degree that it is supplied alternately every 1 second to 10 seconds. As an example, supplying the first gas F1 (warm air) for about 5 seconds and supplying the second gas F2 (cold air) for about 5 seconds may be alternately repeated. In addition, the supply time of the 1st gas F1 (warm air) and the 2nd gas F2 (cold air) may mutually differ.

In the above step S03, volatile components in the treatment liquid supplied to the surface of the work W are volatilized. That is, step S03 may function as a step of drying and solidifying the treatment liquid. By passing through this treatment, the treatment liquid supplied to the surface of the work W is dried to form a treatment film (resist film). Step S03 may be performed until at least the surface of the treatment liquid is solidified and its shape is stabilized.

Next, the control device 100 executes step S04. In step S04 , the control device 100 waits in a state in which the rotation of the work W and the supply of the gas from the gas supply unit 40 are performed until a preset time period elapses. Until the predetermined time elapses (during S04-NO), the above state is continued. After the predetermined time has elapsed (S04-YES), the control device 100 ends the rotation of the work W and the supply of the gas from the gas supply unit 40 .

In addition, step S03 (supply of the first gas F1 (warm air) and the second gas F2 (cold air)) is performed after the treatment of step S02 (discharge of the treatment liquid) as described above. Alternatively, it may be performed partially simultaneously with step S02 (discharge of the processing liquid).

Among the above series of processes, in particular, by alternately supplying the first gas F1 (warm air) and the second gas F2 (cold air) to the peripheral edge W1 of the workpiece W, the surface of the workpiece W is The shape of the processing film (for example, a resist film) in the periphery W1 changes. 9 is a view for explaining a change in the processing liquid R supplied to the peripheral portion W1 of the work W, and is an enlarged view of the vicinity of the peripheral portion of the work W. As shown in FIG. Fig. 9(a) shows that, instead of supplying the first gas F1 (warm air) and the second gas F2 (cold air), the back surface of the work W is heated by a heater to heat the treatment liquid R ) by volatilizing the solvent component and drying the treatment liquid (R) is shown. The processing liquid R (resist liquid) for forming the resist film is supplied to, for example, the center of the rotating work W as described above, and is diffused to the peripheral edge W1 of the work W using centrifugal force. do. At this time, a hump R1 of the resist liquid may be formed on the peripheral edge W1 of the work W. As shown in FIG. The hump R1 is a region (protrusion) that rises extremely with respect to the other region, and may be formed in an annular shape at the outer peripheral edge of the treatment liquid R diffused on the work W. It is assumed that the hump R1 is formed by Marangoni convection in the treatment liquid applied to the surface of the work W.

Marangoni convection is a flow that occurs in the processing liquid R remaining on the surface of the work W (inside the liquid serving as the resist film), and the portion that forms the outline of the processing liquid R when the processing liquid volatilizes The treatment liquid moves in the lateral direction (horizontal direction) toward the In FIG. 9(a), an example of a mode that the hump R1 is formed by the Marangoni convection which generate|occur|produces in the vicinity of the periphery W1 of the workpiece|work W is shown typically. In addition, when the work W is heated by the heater H provided on the back surface of the work W, even in the treatment liquid R, a portion close to the surface of the work W and a portion separated from the work W Because there is a temperature difference in the , Marangoni convection tends to occur. When Marangoni convection occurs in the treatment liquid R on the work W, this convection is used to convert the solid components constituting the treatment liquid (eg, resin particles in the case of a resist liquid) to the treatment liquid R ) and move to the part that becomes the outline. The portion forming the outline of the processing liquid R corresponds to the peripheral portion W1 of the work W. As shown in FIG. When the solid component in the processing liquid R concentrates and precipitates in the peripheral portion W1 of the work W, as shown in FIG. 9A , a hump R1 having a greater thickness than other regions is formed there is When the processing liquid R is dried in this state, a processing film (eg, a resist film) is formed by the processing liquid in a state in which the hump R1 remains. This phenomenon is also called a coffee stain phenomenon, and may occur when the liquid is dried and solidified.

In contrast, in the method described in the present embodiment, Marangoni convection is suppressed by changing the drying method of the treatment liquid R (the volatilization method of the solvent in the treatment liquid). 9B shows, as described in the present embodiment, the first gas F1 (warm air) and the second gas F2 (cold air) are alternately applied to the processing liquid R on the work W The contact method is schematically shown. In this case, the occurrence of Marangoni convection in the treatment liquid remaining on the surface of the work W can be suppressed. Even if Marangoni convection occurs, the first gas F1 (warm air) and the second gas F2 (cold air) flow from above toward the surface of the workpiece W at the periphery W1 of the workpiece W. is blown For this reason, it is prevented that the solid component in the processing liquid R concentrates and precipitates in the peripheral part W1 of the workpiece|work W. As a result, as shown in FIG.9(b), the formation of the hump R1 in the peripheral part W1 of the workpiece|work W is suppressed. That is, by supplying the first gas F1 (warm air) and the second gas F2 (cold air), it becomes possible to provide the shape so that the surface shape of the treatment film by the treatment liquid R becomes smooth.

In the above method, the first gas F1 (warm air) and the second gas F2 (cold air) are alternately supplied to each point of the peripheral portion W1. In other words, the first gas F1 (warm air) is intermittently supplied to each point of the peripheral edge W1 of the work W. As shown in FIG. By setting it as such a structure, adjustment of the speed|rate of solidification of the process liquid R is attained.

Similar to the case where the back surface of the workpiece W is heated by the heater H, in order to quickly dry the processing liquid R by volatilizing the solvent in the processing liquid R, only the first gas F1 (warm air) is used. A method of continuously supplying the work W to the periphery W1 is also considered. Even in the case of such a configuration, since the first base F1 is supplied from above the work W to the periphery W1 , a hump caused by the processing liquid R at the periphery W1 of the work W . The formation of (R1) can be suppressed. In addition, compared with heating by the heater H, the temperature difference (deflection of temperature) within the processing liquid R is small, so that the formation of the hump R1 is suppressed. However, when the first gas F1 (warm air) is continuously supplied to the surface of the work W, the drying rate of the processing liquid R (the volatilization rate of the solvent) is increased. In this case, with respect to the peripheral portion W1 of the work W, the drying of the treatment liquid R may be quicker compared to other regions, and the smoothness of the surface shape of the treatment film on the surface of the work W is affected. is likely to give Therefore, as described above, the rate of solidification of the processing liquid R may be adjusted by intermittently supplying the first gas F1 (warm air) to each point of the peripheral portion W1 of the work W.

Moreover, as a method of intermittently supplying the 1st gas F1 (warm air), you may use the method of not supplying the 2nd gas F2 (cold air). That is, the configuration in which only the first gas F1 (warm air) is intermittently supplied at each position of the peripheral edge W1 of the work W may be realized without supplying the second gas F2 (cold air). As a method of realizing a configuration in which only the first gas F1 (warm air) is intermittently supplied at each position of the peripheral edge W1 of the work W using the gas supply nozzle 50, for example, a nozzle Supplying the 1st gas F1 (warm air) from all of the parts 52a-52d is mentioned. In this case, by adjusting the rotational speed of the work W, the first gas F1 can be intermittently supplied to each position of the peripheral portion W1 of the work W.

(variant example)

As described above, in order to suppress the formation of a hump in the processing film, at least the first gas F1 (warm air) can be supplied to each position of the peripheral portion W1 of the work W. Moreover, if it is possible to intermittently supply the 1st base|substrate F1 (warm air) with respect to each position of the peripheral part W1 of the workpiece|work W, formation of a hump can be suppressed further. Hereinafter, as a modification, the modification of the structure which supplies the 1st base|substrate F1 (warm air) with respect to each position of the peripheral part W1 of the workpiece|work W intermittently is demonstrated.

Fig. 10 (a) is a diagram showing an example of a change in the installation position of the nozzles 41a and 42a. Although the example in which the 1st gas F1 and the 2nd gas F2 are supplied using the gas supply nozzle 50 was demonstrated in the said embodiment, you may use the nozzle of another shape. In (a) of FIG. 10, the example in which the nozzles 41a, 42a are attached to the upper end 26a of the cup 26 is shown. In this case as well, by adjusting the arrangement of the nozzles 41a and 42a so that they are supplied from the openings of the nozzles 41a and 42a but are directed toward the periphery of the work W, similarly to the gas supply nozzle 50, Gas can be supplied to the periphery. In addition, although only one nozzle is shown in FIG.10(a), you may provide a some nozzle of course.

FIG. 10(b) shows a gas supply nozzle 50X in which the shape of the gas supply nozzle 50 is changed. The gas supply nozzle 50X differs from the gas supply nozzle 50 in that nozzle portions for supplying the first gas F1 and the second gas F2 are arranged in an annular shape. That is, in the gas supply nozzle 50X, the main body functions substantially as a some nozzle part. Also in the gas supply nozzle 50X having such a shape, by adjusting the arrangement of the opening for supplying the first gas F1 and the opening for supplying the second gas F2, the first gas F1 and the second gas F2 are arranged. The supply destination of the gas F2 can be appropriately adjusted. As an example, as shown in FIG.10(b), it can be set as the structure in which the 1st base|substrate F1 and the 2nd base|substrate F2 are supplied alternately along the periphery W1 of the workpiece|work W. In addition, in FIG.10(b), although the structure in which the 1st base|substrate F1 and the 2nd base|substrate F2 are respectively supplied from four annular places is shown, this number can be changed suitably.

11 : is a figure explaining the structure in the case of realizing the structure of the 1st gas supply part 41 and the 2nd gas supply part 42 with one nozzle part. 11 shows a configuration example in which the first gas F1 (warm air) and the second gas F2 (cold air) are alternately supplied to the downstream nozzle using one pipe 46 . In this case, the type of gas supplied from a nozzle provided downstream of the pipe 46 can be changed by controlling the temperature adjusting unit 47 and the on/off valve 48 on the pipe 46 by the control device 100 . . As an example of control of the temperature adjusting unit 47, for example, by turning on the heater of the temperature adjusting unit 47, the temperature of the second gas F2 is adjusted to the temperature of the second gas F2, and the temperature of the second gas F2 is turned off. It may be adjusted by . In addition, it is good also as setting the set temperature by the temperature adjustment part 47 into two types of the temperature of the 1st base|substrate F1, and the temperature of the 2nd base|substrate F2. In this way, when the first gas F1 (warm air) and the second gas F2 (cold air) are alternately supplied from one pipe 46 , by switching the setting of one temperature adjusting unit 47 , the nozzle You may control the temperature of the gas supplied from

In addition, as a configuration for alternately supplying the first gas F1 (warm air) and the second gas F2 (cold air) from one nozzle, a method using pipes 41b and 42b corresponding to two types of gases can also be adopted. Specifically, as shown in Fig. 3, by providing pipes 41b and 42b corresponding to two types of gases, respectively, and further providing a switching valve at the front end of the nozzle, the gas supplied from the nozzle is supplied to the first gas F1. It is good also as a structure selected from (warm air) and the 2nd base|substrate F2 (cold air). In this way, the method for supplying the first gas F1 (warm air) and the second gas F2 (cold air) to the peripheral edge W1 of the work W can be appropriately changed.

12 : has shown the example which deform|transformed the mechanism which holds the workpiece|work W. As shown in FIG. In the above embodiment, a case has been described in which the work W, which is an original plate, is held horizontally by the spin chuck 21 and the gas is supplied while rotating the work W. In addition, as a method at the time of drying the workpiece W after supplying the processing liquid R, gas may be supplied while conveying the workpiece W horizontally. Specifically, as shown in FIG. 12 , the work W can be conveyed in the horizontal direction by the conveying mechanism 80 . In this case, as shown in FIG. 12, the nozzles 41a, 42a are arrange|positioned above the peripheral edge W1 of the workpiece|work W conveyed. And by supplying the 1st gas F1 (warm air) and the 2nd gas F2 (cold air) from each nozzle, each position of the periphery W1 of the workpiece|work W conveyed by the conveyance mechanism 80 is In contrast, the first gas F1 (warm air) and the second gas F2 (cold air) may be alternately supplied.

Moreover, as shown in FIG. 12, when nozzle 41a, 42a is arrange|positioned alternately along one periphery of the work W, with respect to each position of the periphery W1 of the work W, the 1st base|substrate F1 ) (warm air) and the second gas F2 (cold air) may be alternately supplied. Moreover, as shown in FIG. 12, along the moving direction of the workpiece|work W, you may arrange|position nozzle 41a, 42a so that nozzle 41a, 42a may become elongate. At this time, by adjusting the length in the longitudinal direction (the length of the region in which the opening exists), the first gas F1 (warm air) and the second gas F2 (cold air) for each position of the workpiece W are adjusted. Feed time can be adjusted. Moreover, the conveyance speed of the workpiece|work W by the conveyance mechanism 80 can also be utilized for adjustment of the supply time of the 1st gas F1 (warm air) and the 2nd gas F2 (cold air).

[Action]

According to the above substrate processing apparatus and substrate processing method, with respect to the periphery W1 of the surface of the work W (substrate) held by the spin chuck 21 as the substrate holding portion, the first temperature is higher than the room temperature. A first gas F1 is supplied. When the first gas F1 is supplied, the processing liquid is dried in a state in which the processing liquid at the periphery W1 of the work W and the first gas F1 are in contact with each other. The drying rate is adjusted, and as a result, the formation of a hump in the peripheral portion W1 is suppressed. For this reason, it becomes possible to form a process film with a uniform film thickness on a board|substrate.

As described above, the cause of the formation of the hump R1 at the periphery of the work W is the temperature difference in the processing liquid on the work W. On the other hand, by drying the processing liquid R while supplying the first gas F1 as described above, the temperature difference in the processing liquid R can be adjusted, and as a result, the formation of a hump is suppressed. For this reason, it becomes possible to form the process film|membrane with a uniform film thickness on the workpiece|work W.

In addition, when the first substrate F1 is intermittently supplied, the formation of a hump in the periphery W1 of the work W is further suppressed, and a treatment film having a more uniform film thickness is formed on the substrate. becomes possible

Moreover, the gas supply part 40 which supplies the 1st gas F1 may have the nozzle 41a (1st nozzle part) which is provided above the peripheral part W1 and supplies the 1st gas F1. Thus, by setting it as the structure which supplies the 1st base|substrate F1 from the upper side of the workpiece|work W, the formation of a hump in the periphery W1 is further suppressed, and the process film|membrane with a more uniform film thickness is applied to the workpiece|work W. It becomes possible to form

Further, the gas supply unit 40 alternately supplies the first gas F1 and the second gas F2 having a second temperature lower than the first temperature to each position of the peripheral portion W1 of the work W, also be By setting it as such a structure, the drying speed of the processing liquid in the peripheral part W1 is adjusted, and formation of a hump in the peripheral part W1 is suppressed. For this reason, it becomes possible to form the process film|membrane with a more uniform film thickness on the workpiece|work W.

In addition, the gas supply part 40 may be able to supply the 1st gas F1 and the 2nd gas F2 simultaneously with respect to mutually different positions on the surface of the work W. In the case of such a configuration, it is possible to quickly supply the first gas and the second gas to each position of the substrate.

Moreover, you may further have the nozzle 42a (2nd nozzle part) which supplies 2nd gas. By having the second nozzle part separately, the supply of the first gas F1 and the second gas F2 can be performed independently.

Moreover, it is good also as an aspect which has a plurality of first nozzle portions and a plurality of second nozzle portions, respectively, and in which the first nozzle portions and the second nozzle portions are alternately arranged along the peripheral portion above the peripheral portion of the substrate. In this case, as described in the above embodiment, by relatively moving the substrate along the extension direction of the peripheral portion W1 (for example, rotating the work W), with respect to each position of the peripheral portion W1, A configuration in which the first gas and the second gas are supplied alternately can be realized.

As mentioned above, although various exemplary embodiment was described, it is not limited to the above-mentioned exemplary embodiment, Various abbreviation|omission, substitution, and change may be made|formed. In addition, it is possible to form another embodiment by combining the elements in another embodiment.

For example, in the above embodiment, the so-called spin coating method in which the processing liquid is applied from the center while rotating the circular workpiece W has been described. It can be applied irrespective of the application method. That is, it can be applied even when the treatment liquid is applied to the work W using the so-called squeegee method.

From the above description, various embodiments of the present disclosure have been described herein for purposes of explanation, and it will be understood that various changes may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and gist are indicated by the appended claims.

Claims (17)

A substrate processing apparatus for forming a treatment film on a surface of a substrate, comprising:
a substrate holding part for holding the substrate to which the processing liquid before drying for forming the processing film has been applied;
a gas supply unit including a first nozzle unit configured to supply a first gas having a first temperature higher than room temperature to a peripheral portion of the surface of the substrate held by the substrate holding unit;
having a substrate processing apparatus. The method of claim 1,
The gas supply unit intermittently supplies the first gas to each position of the periphery of the substrate. 3. The method according to claim 1 or 2,
The first nozzle unit supplies the first gas to the periphery of the substrate from above the periphery of the substrate. 4. The method according to any one of claims 1 to 3,
The gas supply unit alternately supplies the first gas and a second gas having a second temperature lower than the first temperature to each position of the periphery of the substrate. 5. The method of claim 4,
The gas supply unit is capable of simultaneously supplying the first gas and the second gas to positions different from each other on the surface of the substrate. 6. The method of claim 5,
The said gas supply part further has a 2nd nozzle part which supplies the said 2nd gas provided above the periphery of the said board|substrate. 7. The method of claim 6,
A substrate processing apparatus, each having a plurality of the first nozzle part and the second nozzle part, wherein the first nozzle part and the second nozzle part are alternately arranged above the periphery of the substrate along the periphery. 8. The method of claim 6 or 7,
a first pipe for supplying the first gas to the first nozzle unit;
a first temperature adjusting unit for adjusting the temperature of the gas flowing through the first pipe to the first temperature;
a second pipe for supplying the second gas to the second nozzle unit;
A second temperature adjusting unit for adjusting the gas flowing through the second pipe to the second temperature
having a substrate processing apparatus. 5. The method of claim 4,
The first nozzle unit alternately supplies the first gas and the second gas to the surface of the substrate. 10. The method of claim 9,
a pipe for supplying the gas to the first nozzle unit;
A temperature adjusting unit for adjusting the temperature of the gas supplied from the first nozzle unit to the substrate
have,
The temperature adjusting unit adjusts the temperature of the gas supplied to the substrate by switching the temperature of the gas flowing through the pipe between the first temperature and the second temperature. 11. The method of claim 10,
The temperature adjusting unit switches the temperature of the gas flowing through the pipe between the first temperature and the second temperature by switching an on state and an off state of a power source for heating the gas flowing through the pipe, substrate processing equipment. 11. The method of claim 10,
The temperature adjusting unit switches the temperature of the gas flowing through the pipe to the first temperature and the second temperature by changing a setting of a heater that heats the gas flowing through the pipe. 10. The method of claim 9,
a first pipe for supplying the first gas to the first nozzle unit;
a second pipe for supplying the second gas to the first nozzle unit;
A temperature adjusting unit for adjusting the temperature of the gas supplied from the first nozzle unit to the substrate
have,
The temperature adjusting unit adjusts the temperature of the gas supplied to the substrate by switching a pipe for supplying gas to the nozzle unit between the first pipe and the second pipe. 14. The method according to any one of claims 1 to 13,
The substrate holding unit is a rotation mechanism that sucks the substrate and rotates horizontally. 15. The method of claim 14,
and a cup disposed around the substrate holding part to surround the periphery of the substrate supported by the substrate holding part,
The gas supply unit supplies the first gas from a supply port attached to the cup to a periphery of the surface of the substrate. 14. The method according to any one of claims 1 to 13,
The substrate holding unit is a transport mechanism for transporting the substrate in a horizontal direction. A substrate processing method for forming a treatment film on a surface of a substrate, the substrate processing method comprising:
and supplying a first gas having a first temperature higher than normal temperature to a periphery of the surface of the substrate to which the processing liquid before drying for forming the processing film has been applied.

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