KR20220076279A - Apparatus for treating substrate - Google Patents

Abstract

The present invention provides an apparatus for processing a substrate. A substrate processing apparatus includes: a first process processing unit configured to liquid-process a plurality of substrates in a batch manner; and a second processing unit that processes the substrates processed in the first processing unit, and liquid-treats or dries one substrate in a single-wafer type.

Description

Substrate processing apparatus {APPARATUS FOR TREATING SUBSTRATE}

The present invention relates to a substrate processing apparatus.

In order to manufacture a semiconductor device, a desired pattern is formed on a substrate such as a wafer through various processes such as photography, etching, ashing, ion implantation, and thin film deposition on the substrate. Various processing liquids and processing gases are used in each process, and particles and process by-products are generated during the process. In order to remove the thin film, particles, and process by-products on the substrate from the substrate, a liquid treatment process is performed on the substrate before and after each process. In a general liquid treatment process, the substrate is treated with chemicals and rinses, followed by drying. In the liquid treatment process, SiN on the substrate can be stripped.

In addition, a method of treating a substrate with a chemical and a rinse solution can be roughly divided into a batch processing method in which a plurality of substrates are processed in batches, and a single wafer processing method in which the substrates are processed one by one.

In the batch processing method for collectively processing a plurality of substrates, substrate processing is performed by collectively immersing a plurality of substrates in a vertical posture in a processing tank in which a chemical or a rinse liquid is stored. For this reason, it is excellent in the mass productivity of a board|substrate process, and the process quality between each board|substrate is uniform. However, in the batch processing method, a plurality of substrates having patterns formed thereon are immersed in a vertical posture. Accordingly, when the pattern formed on the substrate has a high aspect ratio, pattern leaning may occur in the pattern formed on the substrate in the process of lifting the substrate or the like. In addition, if the drying process is not performed within a short time while the plurality of substrates are exposed to the air at once, there is a risk that a water mark may be generated on some of the plurality of substrates exposed to the air.

On the other hand, in the case of the single-wafer processing method in which the substrates are processed one by one, the substrate processing is performed by supplying a chemical or a rinse liquid to a single substrate rotating in a horizontal position. In addition, in the single-wafer processing method, since the transferred substrate maintains a horizontal posture, there is little risk of the pattern leaning phenomenon described above, and the substrate is processed one by one and the processed substrate is dried immediately or liquid treatment is performed Therefore, the risk of occurrence of the above-described watermark is small. However, in the case of the single-wafer processing method, the productivity of substrate processing is poor, and the processing quality between each substrate is relatively non-uniform when compared with the batch processing method.

In addition, when the substrate is rotated and spin-dried, if the pattern formed on the substrate has a high aspect ratio, there is a risk that the pattern formed on the substrate collapses, causing a leaning phenomenon.

An object of the present invention is to provide a substrate processing apparatus capable of efficiently processing a substrate.

Another object of the present invention is to provide a substrate processing apparatus capable of improving the mass productivity of substrate processing.

Another object of the present invention is to provide a substrate processing apparatus capable of further increasing the uniformity of processing quality between substrates.

Another object of the present invention is to provide a substrate processing apparatus capable of minimizing the risk of generating a watermark on a substrate.

Another object of the present invention is to provide a substrate processing apparatus capable of minimizing the occurrence of a leaning phenomenon in a pattern formed on a substrate.

Another object of the present invention is to provide a substrate processing apparatus capable of efficiently processing a substrate on which a pattern having a high aspect ratio is formed.

The object of the present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the following description.

The present invention provides an apparatus for processing a substrate. A substrate processing apparatus includes: a first process processing unit configured to liquid-process a plurality of substrates in a batch manner; and a second processing unit that processes the substrates processed in the first processing unit, and liquid-treats or dries one substrate in a single-wafer type.

According to an embodiment, the first processing unit includes a first load port unit in which a container in which an unprocessed substrate is accommodated is placed, and the second processing unit is a second rod in which a container in which a processed substrate is accommodated is placed. It may include a port unit.

According to an embodiment, the first processing unit includes a batch hand for transferring a plurality of substrates unloaded from a container placed on the first load port unit, and the second processing unit includes the first processing unit It may include a sheet-wafer hand which conveys one board|substrate liquid-processed by the part.

According to an embodiment, the second processing unit may include: a single-wafer-type processing chamber for liquid-treating and/or drying the substrate in a single-wafer type; and a second buffer unit disposed between the single-wafer processing chamber and the second load port unit and temporarily storing the substrate processed in the single-wafer processing chamber.

According to an embodiment, the second processing unit may include: a single-wafer-type processing chamber for liquid-treating and/or drying the substrate in a single-wafer type; and a first buffer unit disposed between the first processing unit and the single-wafer processing chamber and temporarily storing the substrate processed by the first processing unit.

According to an embodiment, the first processing unit may include: a treatment tank having an accommodation space in which a treatment liquid is accommodated; a storage container immersed in the processing liquid accommodated in the accommodation space and having a storage space for accommodating substrates; and a posture converting member configured to rotate the storage container immersed in the processing liquid.

According to an embodiment, the posture converting member may include a rotating unit mountable to the storage container and rotating the storage container; and a moving unit installed in the treatment tank and configured to horizontally move the storage container mounted on the rotating unit.

According to an embodiment, the treatment tank may have a cylindrical shape with an open top, and the moving unit may be installed on a side of the treatment tank.

According to an embodiment, the moving part may have a 'C' shape in which the open part faces downward so that it can be installed over the side of the treatment tank.

According to an embodiment, the first processing unit further includes a lifting member for moving the storage container rotated by the posture converting member in an up-down direction, wherein the lifting member is detachably provided to the storage container can be

According to an embodiment, the second processing unit further includes a first buffer unit for temporarily storing the substrate liquid-processed by the first processing unit, wherein the device is disposed between the storage container and the first buffer unit. It may further include a transfer unit for transferring the substrate.

According to an embodiment, the apparatus further includes a controller, wherein the controller is configured such that the lifting member moves the storage container in an upward direction to transfer the exposed substrate from the storage container to the first buffer unit. It is possible to control the lifting member and the conveying unit.

According to an embodiment, the apparatus further includes a controller, wherein the controller is configured to transport a substrate disposed at the top among the substrates accommodated in the storage container from the storage container and transport the substrate to the first buffer unit. The conveying unit can be controlled.

According to an embodiment, the controller controls the storage container so that, after the substrate disposed at the top is taken out from the storage container, the substrate disposed at the top of the substrates accommodated in the storage container is exposed to the outside. The lifting member may be controlled to move in an upward direction.

The present invention also provides an apparatus for processing a substrate. A substrate processing apparatus includes: a batch-type processing chamber for cleaning a plurality of substrates in a batchwise manner; a single-wafer-type processing chamber that processes the substrates processed in the batch-type processing chamber and dries one substrate in a single-wafer type; and a transfer unit for transferring a substrate between the batch-type processing chamber and the single-wafer processing chamber.

In an embodiment, the batch-type processing chamber may include: a processing tank having an accommodation space in which a processing liquid is accommodated; and a posture converting member immersed in the processing liquid accommodated in the accommodation space and rotating a storage container having a storage space accommodating substrates.

According to an embodiment, the posture converting member may include a rotating unit mountable to the storage container and rotating the storage container; and a moving unit installed in the treatment tank and configured to horizontally move the storage container mounted on the rotating unit.

According to an embodiment, the batch-type processing chamber may further include a lifting member configured to vertically move the storage container rotated by the posture converting member.

The present invention also provides an apparatus for processing a substrate. A substrate processing apparatus includes: a first process processing unit configured to liquid-process a plurality of substrates in a batch manner; and a second processing unit for drying one substrate in a single-wafer type, wherein the first processing unit includes: a first load port unit for loading only unprocessed substrates; a batch processing chamber for cleaning a plurality of substrates in a batch manner; a first transfer module having a placement hand for transferring a plurality of substrates from the first load port unit to the batch processing chamber; and a first buffer unit disposed between the batch-type processing chamber and the second processing unit to temporarily store a substrate, wherein the second processing unit is a single-wafer type processing unit for drying one substrate in a single-wafer type. chamber; a second transfer module having a single-wafer hand for transferring one substrate to the single-wafer processing chamber by unloading the substrate from the first buffer unit; and a second load port unit for unloading the substrate processed in the single-wafer processing chamber.

According to an embodiment, the single-wafer processing chamber is provided in plurality, at least some of the single-wafer processing chambers are arranged to be stacked with the first buffer unit, and other parts of the single-wafer processing chambers are , may be arranged to be stacked on each other.

According to an embodiment of the present invention, it is possible to efficiently process the substrate.

In addition, according to an embodiment of the present invention, it is possible to improve the mass productivity of substrate processing.

In addition, according to an embodiment of the present invention, it is possible to further increase the uniformity of the processing quality between the respective substrates.

In addition, according to an embodiment of the present invention, it is possible to minimize the risk that a watermark is generated on the substrate.

In addition, according to an embodiment of the present invention, it is possible to minimize the occurrence of the leaching phenomenon in the pattern formed on the substrate.

In addition, according to an embodiment of the present invention, it is possible to efficiently process a substrate on which a pattern having a high aspect ratio is formed.

Effects of the present invention are not limited to the above-described effects, and effects not mentioned will be clearly understood by those of ordinary skill in the art to which the present invention belongs from the present specification and accompanying drawings.

1 is a schematic view of a substrate processing apparatus as viewed from above according to an embodiment of the present invention.
FIG. 2 is a side view of the second processing unit of FIG. 1 viewed from one direction;
FIG. 3 is a side view of the second processing unit of FIG. 1 as viewed from another direction;
FIG. 4 is a schematic view of the batch-type liquid processing chamber and the first transfer chamber of FIG. 1 as viewed from the side;
FIG. 5 is a perspective view illustrating a substrate processing apparatus provided in the third batch type liquid processing chamber of FIG. 4 .
6 is a cross-sectional view illustrating a substrate processing apparatus provided in the third batch type liquid processing chamber of FIG. 4 .
FIG. 7 is a view showing a state in which a substrate is processed in the third batch type liquid processing chamber of FIG. 6 .
FIG. 8 is a view showing a state in which a posture of a substrate is changed in the third batch type liquid processing chamber of FIG. 6 .
FIG. 9 is a view showing a state in which the storage container is moved to the upper part of the lifting member in the third batch type liquid processing chamber of FIG. 6 .
FIG. 10 is a view showing a state in which a substrate disposed at the top of the substrates accommodated in the storage container is exposed to the air in the third batch type liquid processing chamber of FIG. 6 .
11 is a view showing a state in which a substrate is taken out from the third batch type liquid processing chamber of FIG. 6 and loaded into a first buffer unit;
FIG. 12 is a view showing a state in which a substrate disposed at the top of the substrates accommodated in the storage container is exposed to the air after the substrate is unloaded from the third batch type liquid processing chamber of FIG. 4 .
13 is a view illustrating a state in which a substrate is taken out from the third batch type liquid processing chamber of FIG. 6 and loaded into a first buffer unit;
14 is a view showing a substrate processing apparatus provided in the single-wafer liquid processing chamber of FIG. 1 .
15 is a view illustrating a substrate processing apparatus provided in the drying chamber of FIG. 1 .
16 is a schematic view of a substrate processing apparatus according to another exemplary embodiment as viewed from above.

Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that those of ordinary skill in the art to which the present invention pertains can easily implement them. However, the present invention may be implemented in several different forms and is not limited to the embodiments described herein. In addition, in describing a preferred embodiment of the present invention in detail, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. In addition, the same reference numerals are used throughout the drawings for parts having similar functions and functions.

"Including" a certain component means that other components may be further included, rather than excluding other components, unless otherwise stated. Specifically, terms such as “comprise” or “have” are intended to designate that a feature, number, step, action, component, part, or combination thereof described in the specification is present, and includes one or more other features or It should be understood that the existence or addition of numbers, steps, operations, components, parts, or combinations thereof does not preclude the possibility of addition.

The singular expression includes the plural expression unless the context clearly dictates otherwise. In addition, shapes and sizes of elements in the drawings may be exaggerated for clearer description.

Terms such as first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The above terms may be used for the purpose of distinguishing one component from another component. For example, without departing from the scope of the present invention, a first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

When a component is referred to as being “connected” or “connected” to another component, it is understood that the other component may be directly connected or connected to the other component, but other components may exist in between. it should be On the other hand, when it is said that a certain element is "directly connected" or "directly connected" to another element, it should be understood that no other element is present in the middle. Other expressions describing the relationship between components, such as "between" and "immediately between" or "neighboring to" and "directly adjacent to", etc., should be interpreted similarly.

Unless defined otherwise, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted to have meanings consistent with the context of the related art, and are not to be interpreted in an ideal or excessively formal meaning unless explicitly defined in the present application. .

In addition, components for transporting the substrate W described below, for example, the following transport units or transport robots, may be referred to as transport modules.

Hereinafter, an embodiment of the present invention will be described with reference to FIGS. 1 to 16 .

1 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention, as viewed from above, FIG. 2 is a side view of the second process processing unit of FIG. 1 viewed from one direction, and FIG. 3 is the second process of FIG. 1 It is a side view of the processing unit viewed from the other direction.

1, 2, and 3 , a substrate processing apparatus 10 according to an embodiment of the present invention includes a first process processor 100 , a second process processor 200 , and a controller 600 . ) may be included. The first processing unit 100 and the second processing unit 200 may be arranged along the first direction X when viewed from above. Hereinafter, when viewed from above, a direction perpendicular to the first direction (X) is referred to as a second direction (Y), and a direction perpendicular to the first direction (X) and the second direction (Y) is referred to as a third direction. It is called (Z).

The first process processing unit 100 may process a plurality of substrates W in a batch in a batch manner. For example, the first process processing unit 100 may collectively clean the plurality of substrates W in a batch manner. The first process processing unit 100 includes a first load port unit 110 , a first index chamber 120 , a first transfer chamber 130 , a batch-type liquid processing chamber 140 , and a second transfer chamber 150 . ) may be included.

The first load port unit 110 may include at least one or more load ports. A container F in which at least one substrate W is accommodated may be placed in the load ports of the first load port unit 110 . A plurality of substrates (W) may be accommodated in the container (F). For example, 25 substrates may be accommodated in the container F. The container F may be referred to as a cassette, a pod, or a FOUP. The container (F) may be loaded (Loading) to the first load port unit 110 by the container transport device. The substrates (W) accommodated in the container (F) placed on the first load port unit 110 may be unprocessed substrates (W) or substrates (W) requiring liquid processing. In addition, only the container F in which the unprocessed substrate W is accommodated may be placed in the first load port unit 110 . That is, the first load port unit 110 may serve to load the substrate W to be processed.

The first load port unit 110 may be coupled to the first index chamber 120 . The first index chamber 120 and the first load port unit 110 may be arranged in the second direction (Y). The first index chamber 120 may include a first transfer robot 122 and a posture change unit 124 . The first transport robot 122 may transport the unprocessed or required substrate W from the container F seated on the first load port unit 110 . The first transfer robot 122 may take out the substrate W from the container F and load the substrate W into the storage container C provided in the first index chamber 120 . The first transport robot 122 may have a placement hand capable of simultaneously holding and transporting a plurality of (eg, 25) substrates W.

The storage container (C) may have a substantially cylindrical shape. The storage container (C) may have a storage space therein. A plurality of substrates (W) may be accommodated in the storage space of the storage container (C). For example, 50 substrates W may be accommodated in the storage space of the storage container C. The storage container (C) may have a cylindrical shape with one side open. A support member for supporting/gripping the substrate W may be provided in the storage space of the storage container C.

When the loading of the substrate W unloaded from the container F into the storage container C is completed, the storage container C may be transferred to the posture change unit 124 disposed in the first index chamber 120 . . The posture changing unit 124 may rotate the storage container C. For example, the posture changing unit 124 may rotate the storage container C so that the opened portion of the storage container C faces upward. When the open portion of the storage container C is rotated to face upward, the posture of the substrate W accommodated in the storage container C may be changed from a horizontal posture to a vertical posture. The horizontal posture refers to a state in which the upper surface of the substrate W (eg, the surface on which the pattern is formed) is parallel to the X-Y plane, and the vertical posture refers to a state in which the upper surface of the substrate W is parallel to the X-Z plane or the Y-Z plane.

The first transfer chamber 130 may be connected to the first index chamber 120 . The first transfer chamber 130 may include a first transfer unit 132 . The first carrying unit 132 may include a carrying hand capable of carrying an object. In addition, the transfer hand of the first transfer unit 132 may be provided to be movable along the first direction (X), the second direction (Y), and the third direction (Z). In addition, the transfer hand of the first transfer unit 132 may be provided rotatably in the third direction (Z) as a rotation axis. The first transport unit 132 may transport at least one substrate W from the first index chamber 120 and load it into a batch-type liquid processing chamber 140 to be described later. For example, the first transfer unit 132 may unload the plurality of substrates W from the first index chamber 120 at once and load them into the batch-type liquid processing chamber 140 to be described later. For example, the hand of the first conveying unit 132 transports the storage container C rotated by the posture change unit 124 from the first index chamber 120, and transfers the unloaded storage container C to the batch-type liquid. It may be brought into the processing chamber 140 .

The batch-type liquid processing chamber 140 may be arranged side by side with the first transfer chamber 130 when viewed from above. For example, the batch-type liquid processing chamber 140 can be viewed from above when viewed from above.

The batch-type liquid processing chamber 140 may process a plurality of substrates W at once. In the batch-type liquid processing chamber 140 , a plurality of substrates w may be cleaned at once using a processing liquid. In the batch-type liquid processing chamber 140 , a plurality of substrates W may be liquid-processed at once using a processing liquid. The treatment liquid used in the batch liquid treatment chamber 140 may be a chemical and/or a rinse liquid. For example, the chemical may be a chemical having a property of a strong acid or a strong base. In addition, the rinse liquid may be pure. For example, the chemical is APM (Ammonia-Hydrogen Peroxide Mixture), HPM (Hydrochloricacid-Hydrogen Peroxide Mixture), FPM (Hydrofluoricacid-Hydrogen Peroxide Mixture), DHF (Diluted Hydrofluoric acid), a chemical that removes SiN, a chemical containing phosphoric acid, Chemicals containing sulfuric acid and the like may be appropriately selected. The rinse liquid may be appropriately selected from pure water or ozone water.

In addition, the batch-type liquid processing chamber 140 may include a first batch-type liquid processing chamber 141 , a second batch-type liquid processing chamber 142 , and a third batch-type liquid processing chamber 143 . In the first batch type liquid processing chamber 141 and the second batch type liquid processing chamber 142 , the substrate W may be processed using chemicals. In addition, in the third batch type liquid processing chamber 143 , the substrate W may be rinsed using a rinse liquid. In addition, the first transfer unit 132 described above processes the substrate W in the first batch type liquid processing chamber 141 and/or the second batch type liquid processing chamber 142 , and then the receiving container (C) can be transferred to the third batch type liquid processing chamber 143 to treat the substrate W accommodated in the storage container C with the rinse liquid. Details of the batch-type liquid processing chamber 140 will be described later.

The second transfer chamber 150 may be arranged side by side with the first transfer chamber 130 and the batch-type liquid processing chamber 140 when viewed from above. For example, the second transfer chamber 150 may be arranged side by side with the first transfer chamber 130 in the second direction (Y). In addition, the second transfer chamber 150 may be arranged side by side with the batch-type liquid processing chamber 140 in the first direction (X). In addition, the second transfer chamber 150 may be disposed between the third batch type liquid processing chamber 143 and the second process processing unit 200 . For example, the second transfer chamber 150 may be disposed between the third batch-type liquid processing chamber 143 and the first buffer unit 210 to be described later.

The second transfer chamber 150 may transfer the substrate W. The second transport chamber 150 may transport the substrate W from the batch-type liquid processing chamber 140 and transport it to a first buffer unit 210 to be described later. The second transfer chamber 150 may include a second transfer unit 152 having a transfer hand. The carrying hand of the second carrying unit 152 may be provided to be movable along the first direction (X), the second direction (Y), and the third direction (Z). In addition, the transfer hand of the second transfer unit 152 may be provided rotatably in the third direction (Z). In addition, the transfer hand of the second transfer unit 152 transports the substrate W from the third batch liquid processing chamber 143 included in the batch liquid processing chamber 140 to the first buffer unit 210 . can be returned to In addition, the transfer hand of the second transfer unit 152 may transfer the substrate W in a horizontal position from the third single-wafer liquid processing chamber 143 to the first buffer unit 210 .

The second processing unit 200 may process the substrate W processed by the first processing unit 100 . The second processing unit 200 may process the substrate W processed by the first processing unit 100 , and may perform a liquid treatment or drying treatment on the substrate W in a single-wafer type. The second processing unit 200 includes a first buffer unit 210 , a third transfer chamber 220 , a single-wafer liquid processing chamber 230 , a drying chamber 240 , a second buffer unit 250 , and a second It may include an index chamber 260 and a second load port unit 270 . Both the single-wafer liquid processing chamber 230 and the drying chamber 240 may be referred to as single-wafer processing chambers.

When viewed from above, the first buffer unit 210 may be arranged side by side with the above-described second transfer chamber 150 in the first direction (X). For example, the first buffer unit 210 may be disposed on one side of the second transfer chamber 150 . The first buffer unit 210 may have a storage space for temporarily storing the liquid-processed substrates W in the first process processing unit 100 . The first buffer unit 210 may store the substrates W whose posture is changed from the vertical posture to the horizontal posture in a horizontal posture in a third batch type liquid processing chamber 143 to be described later. In addition, the first buffer unit 210 supplies a wetting liquid to the storage space to prevent the substrates W brought into the storage space from drying out (to maintain the wettability of the substrate W). A liquid supply line may be connected. Also, the substrates W stored in the first buffer unit 210 may be stored in storage spaces independently partitioned in the first buffer unit 210 . Also, the first buffer unit 210 may be disposed to be stacked with at least some of the single-wafer processing chambers. For example, a drying chamber 240 or a single-wafer liquid processing chamber 230 to be described later may be disposed under the first buffer unit 210 . For example, a single-wafer liquid processing chamber 230 to be described later may be disposed under the first buffer unit 210 . There may be one or a plurality of single-wafer liquid processing chambers 230 disposed under the first buffer unit 210 .

The third transfer chamber 220 may be disposed between drying chambers 240 to be described later when viewed from above. In addition, when viewed from above, the third transfer chamber 220 may be disposed between the single-wafer liquid processing chamber 230 and the first buffer unit 210 to be described later. The third transfer chamber 220 may include a third transfer unit 222 . The third transfer unit 222 may include a transfer hand that transfers the substrate W from the first buffer unit 210 to the drying chamber 240 or the single-wafer liquid processing chamber 230 . The hand of the third transfer unit 220 may be a single-wafer hand that transfers the substrate W one by one. The transfer hand of the third transfer unit 222 may be provided to be movable along the first direction (X), the second direction (Y), and the third direction (Z). In addition, the transfer hand of the third transfer unit 222 may be provided rotatably in the third direction (Z) as a rotation axis.

The single-wafer liquid processing chamber 230 may be disposed on one side and the other side of the third transfer chamber 220 when viewed from above. Some of the single-wafer liquid processing chambers 230 may be disposed to be stacked with the first buffer unit 210 as described above. Some of the single-wafer liquid processing chambers 230 may be disposed below the first buffer unit 210 .

The single-wafer liquid processing chamber 230 rotates the substrate W in a horizontal position, and supplies the processing liquid to the rotated substrate W to process the substrate W. In the single-wafer liquid processing chamber 230 , the substrate W may be processed one by one. The processing liquid supplied from the single-wafer liquid processing chamber 230 may be an organic solvent. For example, the treatment liquid supplied from the single-wafer liquid treatment chamber 230 may be isopropyl alcohol (IPA). In the single-wafer liquid processing chamber 230 , an organic solvent may be supplied to the rotating substrate W, and the substrate W may be rotated to dry the substrate W. On the other hand, in the single-wafer liquid processing chamber 9230 , the organic solvent is supplied to the rotating substrate W, and the substrate W is transferred to a drying chamber 240 to be described later in a wet state in the organic solvent, and the drying chamber 240 ), the substrate W may be dried. A detailed description of the single-wafer liquid processing chamber 230 will be described later.

In the drying chamber 240 , the substrate W may be processed using a supercritical fluid. The drying chamber 240 may be a supercritical chamber in which one substrate W is dried in a single wafer type. The drying chamber 240 may be a supercritical chamber for drying the substrate W using a supercritical fluid. A detailed description of the drying chamber 240 will be described later.

The second buffer unit 250 may be disposed between the third transfer chamber 230 and the second index chamber 260 to be described later. The second buffer unit 250 may be disposed between the single-wafer processing chamber and the second load port unit 270 .

Similar to the first buffer unit 210 , the first buffer unit 250 may provide a space in which the substrate W is temporarily stored or stored. For example, the second buffer unit 250 may temporarily store the substrate W processed in the single-wafer liquid processing chamber 230 and/or the drying chamber 240 which is a single-wafer processing chamber.

The second index chamber 260 may be arranged in parallel with the second buffer unit 250 and the third transfer chamber 220 . The second index chamber 260 may be arranged side by side with the second buffer unit 250 and the third transfer chamber 220 in the second direction (Y). The third transfer unit 222 of the above-described third transfer chamber 220 transfers the substrate W in the horizontal posture processed in the single-wafer liquid processing chamber 230 or the drying chamber 240, and the transferred substrate ( W) may be transferred to the second buffer unit 250 . The second transfer robot 262 of the second index chamber 260 may transfer the substrate W from the second buffer unit 250 .

The hand of the second transfer robot 262 may be a single-wafer hand that transfers the substrate W one by one. The transfer hand of the second transfer robot 262 may be provided to be movable in the first direction (X), the second direction (Y), and the third direction (Z). In addition, the transfer hand of the second transfer robot 262 may be provided rotatably in the third direction (Z) as a rotation axis.

The second load port unit 270 may include at least one or more load ports. A container F capable of accommodating a plurality of substrates W may be placed in the load port of the second load port unit 270 . For example, in the container F placed on the second load port unit 270 , the substrates W that have been processed by the first processing unit 100 and the second processing unit 200 may be accommodated therein. In the container F placed on the second load port unit 270 , only the substrates W that have been processed by the first processing unit 100 and the second processing unit 200 may be accommodated. That is, the second load port unit 270 may perform a function of unloading the processed substrate W from the substrate processing apparatus.

The above-described second transfer robot 262 may carry the processed substrate W into the container F placed in the load port of the second load port unit 270 . The container F may be conveyed to the outside of the substrate processing apparatus 10 by the above-described article conveying apparatus (eg, OHT).

The controller 600 may control the substrate processing apparatus 10 . For example, the controller 600 may control components of the substrate processing apparatus 10 . For example, the controller 600 may control the substrate processing apparatus 10 so that the substrate processing apparatus 10 may perform a process of processing the substrate W. For example, the controller 600 controls the batch-type liquid processing chamber 140 , the second transfer unit 152 , the first buffer unit 210 , the third transfer unit 222 , and the second transfer robot 262 . can do. Also, the controller 600 may control the liquid supply source 315 , the liquid discharge line 316 , the posture change member 330 , the elevating member 340 , and the heating member 320 , which will be described later.

In addition, the controller 600 includes a process controller including a microprocessor (computer) that executes control of the substrate processing apparatus 10 , a keyboard for the operator to input commands to manage the substrate processing apparatus 10 , etc.; A user interface including a display that visualizes and displays the operation status of the substrate processing apparatus 10 , a control program for executing the processing executed in the substrate processing apparatus 10 under the control of the process controller, various data and processing conditions Accordingly, a program for executing processing in each component unit, that is, a storage unit in which a processing recipe is stored may be provided. Further, the user interface and the storage unit may be connected to the process controller. The processing recipe may be stored in a storage medium among the storage units, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or DVD, or a semiconductor memory such as a flash memory.

FIG. 4 is a schematic view of the batch-type liquid processing chamber and the first transfer chamber of FIG. 1 as viewed from the side;

Referring to FIG. 4 , the batch-type liquid processing chamber 140 includes a first batch-type liquid processing chamber 141 , a second batch-type liquid processing chamber 142 , and a third batch-type liquid processing chamber ( 143) may be included. The first batch type liquid treatment chamber 141 , the second batch type liquid treatment chamber 142 , and the third batch type liquid treatment chamber 143 may be arranged side by side in the first direction (X).

The first batch type liquid processing chamber 141 and the second batch type liquid processing chamber 142 may have the same or similar structures to each other. For example, the first batch-type liquid processing chamber 141 and the second batch-type liquid processing chamber 142 may have the same or similar structures as the types of processing liquids used are different. For example, in the first batch type liquid processing chamber 141 , the substrate W may be processed using the first processing liquid L1 . For example, in the second batch type liquid processing chamber 142 , the substrate W may be processed using the second processing liquid L2 . The first treatment liquid L1 may be any one of the above-described chemicals. The second treatment liquid L2 may be another one of the above-described chemicals.

The first batch type liquid treatment chamber 141 includes a first treatment tank 141a, a first liquid supply line 141b, a first liquid discharge line 141c, a first heating member 141d, and a first liquid supply line. It may include a circle 141e. The second batch type liquid treatment chamber 142 includes a second treatment tank 142a, a second liquid supply line 142b, a second liquid discharge line 142c, a second heating member 142d, and a second liquid supply line. It may include a circle 142e. The first liquid supply line 141b, the first liquid discharge line 141c, the first heating member 141d, and the first liquid supply source 141e are connected to the second treatment tank 142a, the second liquid supply line ( 142b), the second liquid discharge line 142c, the second heating member 142d, and the second liquid supply source 142e may have substantially the same or similar structures and functions. Accordingly, hereinafter, the first batch type liquid processing chamber 141 will be mainly described.

The first treatment tank 141a may have an accommodation space in which the first treatment liquid L1 is accommodated. The first treatment tank 141a may have a cylindrical shape with an open top. A heating member 141d for controlling the temperature of the first treatment liquid L1 accommodated in the accommodation space may be provided in the first treatment tank 141a. Also, the first liquid supply line 141b connected to the first liquid supply source 141e may supply the first treatment liquid L1 to the receiving space of the first treatment tank 141a, and the first liquid discharge line ( 142c) may discharge the first treatment liquid L1 supplied to the accommodation space to the outside. In addition, the storage container (F) has a cylindrical shape with one side open, and may have a storage space therein. Also, the storage container F may be immersed in the first processing liquid L1 supplied to the accommodation space of the first processing tank 141a while the plurality of substrates W are accommodated. In addition, at least one or more through holes are formed in the storage container C, so that the substrates W accommodated in the storage container C may be immersed in the first processing liquid L1. The substrates W processed by the first processing liquid L1 are sequentially transferred to the second batch type liquid processing chamber 142 and the third batch type liquid processing chamber 143 by the first transfer unit 132 . It may be conveyed and sequentially processed by the second processing liquid L2 and the third processing liquid L3. The third treatment liquid L3 may be the above-described rinse liquid.

FIG. 5 is a perspective view illustrating a substrate processing apparatus provided in the third batch type liquid processing chamber of FIG. 4 , and FIG. 6 is a cross-sectional view illustrating the substrate processing apparatus provided in the third batch type liquid processing chamber of FIG. 4 . 5 and 6 , the substrate processing apparatus 300 provided in the third batch type liquid processing chamber 143 includes a processing tank 310 , a liquid supply line 314 , a liquid supply source 315 , It may include a liquid discharge line 316 , a heating member 320 , a posture converting member 330 , and an elevating member 340 .

The treatment tank 310 may have an accommodation space 312 in which the third treatment liquid L3 is accommodated. The treatment tank 310 may have a cylindrical shape with an open top. The treatment bath 310 may include a bottom portion and a side portion extending upwardly from an edge region of the bottom portion when viewed from above.

Also, the liquid supply source 315 may supply the treatment liquid to the accommodation space 312 . The liquid supply source 315 may supply the third processing liquid L3 to the accommodation space 312 . The liquid supply source 315 may supply a rinse liquid to the accommodation space 312 . The liquid supply source 315 may be connected to the liquid supply line 314 . One end of the liquid supply line 314 may be connected to the accommodation space 312 , and the other end of the liquid supply line 314 may be connected to the liquid supply source 315 . The liquid supply source 315 may supply a rinse liquid to the liquid supply line 314 , and the liquid supply line 314 may supply a rinse liquid to the accommodation space 312 . Also, the third treatment liquid L3 used in the accommodation space 312 may be discharged to the outside through the liquid discharge line 316 .

The heating member 320 may control the temperature of the third processing liquid L3 supplied to the accommodation space 312 . For example, the heating member 320 may heat the third processing liquid L3 supplied to the accommodation space 312 to a set temperature. The heating member 320 may be provided at the bottom and the side of the treatment bath 310 . For example, the heating element 320 may be provided in the treatment bath 310 . The heating member 320 may control the temperature of the third processing liquid L3 supplied to the accommodation space 312 by generating cold or warm heat. The heating member 320 may be a heater. However, the present invention is not limited thereto, and the heating member 320 may be variously modified into a known device capable of adjusting the temperature of the third processing liquid L3 supplied to the accommodation space 312 .

The posture converting member 330 may rotate the storage container C submerged in the third processing liquid L3 . The posture converting member 330 rotates the storage container C submerged in the third processing liquid L3 to convert the postures of the substrates W accommodated in the storage container C from a vertical posture to a horizontal posture. can The posture converting member 330 may include a moving unit 332 and a rotating unit 334 .

The moving unit 332 may be installed in the treatment tank 310 . The moving part 332 may be configured to be movable in the first direction (X). The moving unit 332 may be installed on the side of the treatment tank 310 . For example, the moving part 332 may have a 'C' shape in which the open part faces downward so that it can be installed over the side of the treatment tank 310 . The moving unit 332 is configured to be movable along the first direction (X) as described above, so that the storage container mounted on the rotating unit 334, which will be described later, is moved along the first direction (X), which is a horizontal direction. can

The rotating part 334 may be installed in the moving part 332 . The rotating part 334 may be provided so as to be mounted in a mounting groove (not shown) formed in the storage container (C). The rotating part 334 is provided to be mounted on the storage container (C), and can rotate the storage container (C). For example, the rotation unit 334 may have an axial shape, and the rotation axis may be parallel to the second direction (Y). Also, the rotating unit 334 may hold the storage container C while the storage container C is locked in the accommodation space 312 .

The lifting member 340 may move the storage container C in the vertical direction. The lifting member 340 may move the storage container C rotated by the posture converting member 330 in the vertical direction. The lifting member 340 may be detachably provided in the storage container (C). The lifting member 340 may include a shaft 342 and a driver 344 . The shaft 342 may be moved in the vertical direction by a driving force generated by the driver 344 . Actuator 344 may be a pneumatic, hydraulic cylinder, or motor. However, the present invention is not limited thereto, and the actuator 344 may be variously modified as a known device capable of moving the shaft 342 in the vertical direction.

In addition, the shaft 342 may be provided at the bottom of the treatment tank 310 when viewed from above, and may be disposed in an area adjacent to the above-described first buffer unit 210 . The shaft 342 may have an axial shape. The shaft 342 may serve as a guide shaft for guiding the position of the storage container C rotated by the posture converting member 330 . For example, the shaft 342 may be inserted into the alignment groove CG formed on the bottom surface of the storage container C rotated by the posture converting member 330 to guide the position of the storage container C. In addition, the elevating member 340 mentioned in the above-described example may also be referred to as a guide member or the like.

Hereinafter, a substrate processing method according to an embodiment of the present invention will be described with reference to FIGS. 7 to 13 . The controller 600 may control the substrate processing apparatus 10 to perform a substrate processing method described below.

Referring to FIG. 7 , a storage container C in which a plurality of substrates W, for example, about 25 to 50 substrates W are accommodated, is immersed in the third processing liquid L3 supplied to the accommodation space 312 . can be For example, the storage container C may be immersed in the third processing liquid L3 , and the third processing liquid L3 may flow into the storage space of the storage container C to process the substrates W . In this case, the substrates W accommodated in the storage container C may maintain a vertical posture. Also, while the substrates W are processed by the third processing liquid L3 , the rotating part of the posture converting member 330 may hold the storage container C .

Referring to FIG. 8 , when the processing of the substrates W is completed by the third processing liquid L3 , the rotating unit 334 of the posture converting member 330 may rotate the storage container C . The rotation unit 334 of the posture converting member 330 may rotate the storage container C by using a rotation axis parallel to the second direction Y to rotate the storage container C. When the storage container C is rotated, the postures of the plurality of substrates W accommodated in the storage container C may be converted from a vertical posture to a horizontal posture. In this case, the rotating unit 334 may rotate the storage container C while the storage container C is submerged in the third processing liquid L3 supplied to the accommodation space 312 . This is because, when the storage container C is rotated while being exposed to the outside (eg, exposed to air), the substrates W accommodated in the storage container C may be dried.

Referring to FIG. 9 , the storage container C rotated by the rotating part 334 may be moved along the first direction X while being mounted on the rotating part 334 . For example, the storage container C may be moved to the upper portion of the elevating member 340 described above. Also, the horizontal movement of the storage container C may be performed while being immersed in the third processing liquid L3 supplied to the accommodation space 312 . This is because, when the storage container C is moved while being exposed to the outside (eg, exposed to air), the substrates W accommodated in the storage container C may be dried.

Referring to FIG. 10 , the shaft 342 of the elevating member 340 may be moved upward to be inserted into the alignment groove CG formed in the storage container C. Referring to FIG. When inserted into the alignment groove CG, the rotating part 334 may be moved along the second direction Y to be separated from the storage container C. Thereafter, the shaft 342 may move the storage container C in the upward direction to expose some of the substrates W accommodated in the storage container C to the outside (eg, expose to the air). For example, the shaft 342 moves the storage container C in the upward direction to expose only the substrate W disposed at the top of the substrates W accommodated in the storage container C to the outside (eg, air exposure during the period). This prevents the remaining substrates W from drying out, that is, maintaining wettability, except for the substrate W disposed at the uppermost portion that is later carried out from the storage container C by the third transfer unit 152 . to do

Referring to FIG. 11 , the substrate W disposed on the uppermost portion of the storage container C may be transported from the storage container C by the third transfer unit 153 and transferred to the first buffer unit 210 . have. At this time, the first buffer unit 210 may include a nozzle for supplying a chemical or mist capable of maintaining the wettability of the substrate W transferred to the storage space of the first buffer unit 210 as described above. have. The chemical solution or mist may include a treatment solution selected from isopropyl alcohol (IPA), the aforementioned chemical, and the aforementioned rinsing solution.

Referring to FIG. 12 , after the substrate W disposed on the uppermost portion is carried out to the storage container C as described above, the shaft 342 of the elevating member 340 moves upward once more to the storage container ( C) can be moved. Accordingly, only the uppermost substrate W among the substrates W accommodated in the storage container C may be exposed to the outside (eg, exposed to the air). This prevents the remaining substrates W from drying out, that is, maintaining wettability, except for the substrate W disposed at the uppermost portion that is later carried out from the storage container C by the third transfer unit 152 . to do

Referring to FIG. 13 , the substrate W disposed on the uppermost portion of the storage container C may be transported from the storage container C by the third transfer unit 153 and transferred to the first buffer unit 210 . have.

14 is a view showing a substrate processing apparatus provided in the single-wafer liquid processing chamber of FIG. 1 . The substrate processing apparatus 400 provided in the single-wafer liquid processing chamber 230 includes a housing 410 , a processing container 420 , a support unit 440 , an elevation unit 460 , and a liquid supply unit 480 . can do.

The housing 410 has a processing space 412 therein. The housing 410 may have a cylindrical shape having a space therein. A processing container 420 , a support unit 440 , an elevation unit 460 , and a liquid supply unit 480 may be provided in the inner space 412 of the housing 410 . The housing 410 may have a rectangular shape when viewed from the front cross-section. However, the present invention is not limited thereto, and the housing 410 may be deformed into various shapes capable of having the processing space 412 .

The processing container 420 has a cylindrical shape with an open top. The processing container 420 has an internal recovery container 422 and an external recovery container 426 . Each of the recovery tubes 422 and 426 recovers different treatment liquids from among the treatment liquids used in the process. The inner recovery container 422 is provided in an annular ring shape surrounding the substrate support unit 440 , and the external recovery container 426 is provided in an annular ring shape surrounding the inner recovery container 426 . The inner space 422a and the internal recovery barrel 422 of the internal recovery barrel 422 function as a first inlet 422a through which the processing liquid flows into the internal recovery barrel 422 . The space 426a between the internal collection tube 422 and the external collection tube 426 functions as a second inlet 426a through which the treatment liquid flows into the external collection tube 426 . According to an example, each of the inlets 422a and 426a may be located at different heights. Recovery lines 422b and 426b are connected under the bottom of each of the recovery barrels 422 and 426 . The treatment liquids introduced into each of the recovery tanks 422 and 426 may be provided to an external treatment liquid regeneration system (not shown) through the recovery lines 422b and 426b to be reused.

The support unit 440 supports the substrate W in the processing space 412 . The support unit 440 supports and rotates the substrate W during the process. The support unit 440 includes a support plate 442 , a support pin 444 , a chuck pin 446 , and rotation driving members 448 and 449 .

The support plate 442 is provided in a substantially circular plate shape, and has an upper surface and a lower surface. The lower surface has a smaller diameter than the upper surface. That is, the support plate 442 may have a shape of a narrow upper surface and a narrow lower surface. The upper and lower surfaces are positioned so that their central axes coincide with each other. In addition, a heating means (not shown) may be provided on the support plate 442 . The heating means provided on the support plate 442 may heat the substrate W placed on the support plate 442 . The heating means may generate heat. The heat generated by the heating means may be warm or cold. Heat generated by the heating means may be transferred to the substrate W placed on the support plate 442 . In addition, the heat transferred to the substrate W may heat the processing liquid supplied to the substrate W. The heating means may be a heater and/or a cooling coil. However, the present invention is not limited thereto, and the heating means may be variously modified with known devices.

A plurality of support pins 444 are provided. The support pins 444 are disposed to be spaced apart from each other at predetermined intervals on the edge of the upper surface of the support plate 442 and protrude upward from the support plate 442 . The support pins 444 are arranged to have an annular ring shape as a whole by combination with each other. The support pins 444 support the rear edge of the substrate W so that the substrate W is spaced apart from the upper surface of the support plate 442 by a predetermined distance.

A plurality of chuck pins 446 are provided. The chuck pin 446 is disposed farther from the center of the support plate 442 than the support pin 444 . The chuck pin 446 is provided to protrude upward from the upper surface of the support plate 442 . The chuck pin 446 supports the side of the substrate W so that the substrate W is not laterally separated from the original position when the support plate 442 is rotated. The chuck pin 446 is provided to enable linear movement between the outer position and the inner position along the radial direction of the support plate 442 . The outer position is a position farther from the center of the support plate 442 compared to the inner position. When the substrate W is loaded or unloaded from the support plate 442 , the chuck pin 446 is positioned at an outer position, and when a process is performed on the substrate W, the chuck pin 446 is positioned at an inner position. The inner position is a position where the chuck pin 446 and the side of the substrate W contact each other, and the outer position is a position where the chuck pin 446 and the substrate W are spaced apart from each other.

The rotation drive members 448 and 449 rotate the support plate 442 . The support plate 442 is rotatable about a magnetic center axis by the rotation driving members 448 and 449 . The rotation driving members 448 and 449 include a support shaft 448 and a driving unit 449 . The support shaft 448 has a cylindrical shape facing the fourth direction 16 . The upper end of the support shaft 448 is fixedly coupled to the bottom surface of the support plate 442 . According to an example, the support shaft 448 may be fixedly coupled to the center of the bottom surface of the support plate 442 . The driving unit 449 provides a driving force to rotate the support shaft 448 . The support shaft 448 is rotated by the driving unit 449 , and the support plate 442 is rotatable together with the support shaft 448 .

The lifting unit 460 linearly moves the processing container 420 in the vertical direction. As the processing vessel 420 moves up and down, the relative height of the processing vessel 420 with respect to the support plate 442 changes. In the lifting unit 460 , when the substrate W is loaded or unloaded from the support plate 442 , the processing container 420 is lowered so that the support plate 442 protrudes above the processing container 420 . In addition, when the process is in progress, the height of the processing container 420 is adjusted so that the processing liquid can be introduced into the predetermined collection troughs 422 and 426 according to the type of the processing liquid supplied to the substrate W. The lifting unit 460 has a bracket 462 , a moving shaft 464 , and a driver 466 . The bracket 462 is fixedly installed on the outer wall of the processing container 420 , and a moving shaft 464 , which is moved in the vertical direction by the actuator 466 , is fixedly coupled to the bracket 462 . Optionally, the lifting unit 460 may move the support plate 442 in the vertical direction.

The liquid supply unit 480 may supply a processing liquid to the substrate W. The treatment liquid may be an organic solvent, the aforementioned chemical, or a rinse liquid. The organic solvent may be isopropyl alcohol (IPA) liquid.

The liquid supply unit 480 may include a moving member 481 and a nozzle 489 . The moving member 481 moves the nozzle 489 to the process position and the standby position. The process position is a position where the nozzle 489 faces the substrate W supported by the support unit 440 . According to an example, the process position is a position for discharging the processing liquid to the upper surface of the substrate W. The process location also includes a first feed location and a second feed location. The first supply position may be a position closer to the center of the substrate W than the second supply position, and the second supply position may be a position including an end of the substrate. Optionally, the second supply location may be an area adjacent to the end of the substrate. The standby position is defined as the position where the nozzle 489 is out of the process position. According to an example, the standby position may be a position at which the nozzle 489 stands by before or after the processing on the substrate W is completed.

The moving member 481 includes an arm 482 , a support shaft 484 , and an actuator 484 . The support shaft 484 is located on one side of the processing vessel 420 . The support shaft 484 has a rod shape whose longitudinal direction faces the fourth direction. The support shaft 484 is provided to be rotatable by the actuator 484 . The support shaft 484 is provided to enable lifting and lowering movement. Arm 482 is coupled to the top of support shaft 484 . Arm 482 extends perpendicularly from support shaft 484 . A nozzle 489 is coupled to an end of the arm 482 . As the support shaft 484 is rotated, the nozzle 489 may swing along with the arm 482 . The nozzle 489 may be swingably moved to a process position and a standby position. Optionally, arm 482 may be provided to enable forward and backward movement in its longitudinal direction. A path along which the nozzle 489 moves when viewed from the top may coincide with the central axis of the substrate W at the process position.

15 is a view illustrating a substrate processing apparatus provided in the drying chamber of FIG. 1 . Referring to FIG. 15 , the drying chamber 500 may remove the processing liquid remaining on the substrate W by using the drying fluid G in a supercritical state. The drying chamber 500 may be a supercritical chamber in which a processing liquid (eg, a rinse liquid or an organic solvent) remaining on the substrate W is removed using the supercritical fluid. For example, the drying chamber 500 may perform a drying process of removing the organic solvent remaining on the substrate W using carbon dioxide (CO 2 ) in a supercritical state.

The drying chamber 500 may include a body 510 , a heating member 520 , a fluid supply unit 530 , a fluid exhaust unit 550 , and an elevation member 560 . The body 510 may have an internal space 518 in which the substrate W is processed. The body 510 may provide an internal space 518 in which the substrate W is processed. The body 510 may provide an internal space 518 in which the substrate W is dried by the drying fluid G in a supercritical state.

The body 510 may include an upper body 512 and a lower body 514 . The upper body 512 and the lower body 514 may be combined with each other to form the inner space 518 . The substrate W may be supported in the inner space 518 . For example, the substrate W may be supported by a support member (not shown) in the inner space 518 . The support member may be configured to support the lower surface of the edge region of the substrate W. Any one of the upper body 512 and the lower body 514 may be coupled to the lifting member 560 to move in the vertical direction. For example, the lower body 514 may be coupled to the elevating member 560 to move vertically by the elevating member 560 . Accordingly, the internal space 518 of the body 510 may be selectively sealed. In the above-described example, the lower body 514 is coupled to the elevating member 560 to move in the vertical direction as an example, but the present invention is not limited thereto. For example, the upper body 512 may be coupled to the lifting member 560 to move in the vertical direction.

The heating member 520 may heat the drying fluid G supplied to the inner space 518 . The heating member 520 may increase the temperature of the internal space 518 of the body 510 to phase-change the drying fluid G supplied to the internal space 518 into a supercritical state. In addition, the heating member 520 may increase the temperature of the internal space 518 of the body 510 so that the supercritical drying fluid G supplied to the internal space 518 maintains the supercritical state. .

Also, the heating member 520 may be embedded in the body 510 . For example, the heating member 520 may be embedded in any one of the upper body 512 and the lower body 514 . For example, the heating element 520 may be provided in the lower body 514 . However, the present invention is not limited thereto, and the heating member 520 may be provided at various positions capable of increasing the temperature of the internal space 518 . Also, the heating member 520 may be a heater. However, the present invention is not limited thereto, and the heating member 520 may be variously modified as a known device capable of increasing the temperature of the internal space 518 .

The fluid supply unit 530 may supply the drying fluid G to the internal space 518 of the body 510 . The drying fluid G supplied by the fluid supply unit 530 may include carbon dioxide (CO2). The fluid supply unit 530 may include a fluid supply source 531 , a first supply line 533 , a first supply valve 535 , a second supply line 537 , and a second supply valve 539 . .

The fluid source 531 may store and/or supply the drying fluid G supplied to the internal space 518 of the body 510 . The fluid supply source 531 may supply the drying fluid G to the first supply line 533 and/or the second supply line 537 . For example, a first supply valve 535 may be installed in the first supply line 533 . In addition, a second supply valve 539 may be installed in the second supply line 537 . The first supply valve 535 and the second supply valve 539 may be on/off valves. Depending on the on/off of the first supply valve 535 and the second supply valve 539 , the drying fluid G may selectively flow in the first supply line 533 or the second supply line 537 . .

In the above-described example, it has been described that the first supply line 533 and the second supply line 537 are connected to one fluid supply source 531 as an example, but the present invention is not limited thereto. For example, a plurality of fluid sources 531 are provided, the first supply line 533 is connected to any one of the plurality of fluid sources 531 , and the second supply line 537 is one of the fluid sources 531 . It can also be connected to another.

Also, the first supply line 533 may be an upper supply line for supplying a drying gas from the upper portion of the internal space 518 of the body 510 . For example, the first supply line 533 may supply the drying gas to the internal space 518 of the body 510 in a direction from top to bottom. For example, the first supply line 533 may be connected to the upper body 512 . Also, the second supply line 537 may be a lower supply line for supplying a drying gas from a lower portion of the internal space 518 of the body 510 . For example, the second supply line 537 may supply the drying gas to the inner space 518 of the body 510 in a direction from bottom to top. For example, the second supply line 537 may be connected to the lower body 514 .

The fluid exhaust unit 550 may exhaust the drying fluid G from the internal space 518 of the body 510 .

As described above, the substrate processing apparatus 10 according to an embodiment of the present invention may include both a batch type liquid processing chamber 140 and a single wafer type liquid processing chamber 230 . Accordingly, it is possible to have all the advantages of the batch-type liquid processing method and the single-wafer liquid processing chamber.

For example, in the batch-type liquid processing chamber 140 , a plurality of substrates W can be processed at once, so the mass productivity of processing the substrate W is very good, and the processing uniformity between the substrates W is very high. In addition, when the pattern formed on the substrate W has a high aspect ratio, chemicals that have not been processed in the batch-type liquid processing chamber 140 (eg, parts that have not been etched) are treated in the single-wafer liquid processing chamber 230 , It can be supplemented by supplying a rinse solution, etc. In addition, the substrate (W, for example, a wafer) wetted by the organic solvent supplied from the single-wafer liquid processing chamber 230 or the first buffer unit 210 is a drying chamber for drying the substrate W by supplying a supercritical fluid. may be returned to 240 . The supercritical fluid has a high penetrating power with respect to the space between the patterns formed on the substrate W, and can dry the substrate W without rotating the substrate W, thereby minimizing the occurrence of the pattern leaning phenomenon described above. can do. In addition, the substrate processing apparatus 10 of the present invention can perform all of the single-wafer liquid processing method, the batch liquid processing method, and the method of drying the substrate W using a supercritical fluid, so that particles, Defects caused by falling and flow can be improved. In addition, since the number of substrates W that can be processed in the batch-type liquid processing chamber 140 is relatively large, a large number of liquid processing chambers are not required, thereby reducing the footprint of the substrate processing apparatus 10 . There are advantages that can be In addition, by further providing the single-wafer liquid processing chamber 230 as described above, SiO2 is added to the pattern on the substrate W that can be generated when the substrate W is processed using only the batch liquid processing chamber 140 . It is possible to solve the problem of abnormal growth.

In addition, as in the substrate processing apparatus 10 according to an embodiment of the present invention, when both the batch-type liquid processing chamber 140 and the single-wafer liquid processing chamber 230 are provided, the posture of the substrate W is vertically It is essential to change from a posture to a horizontal posture. Accordingly, the substrate processing apparatus 10 according to an embodiment of the present invention includes the posture converting member 330 to convert the posture of the substrate W from the vertical posture to the horizontal posture. At this time, in order to maintain the wettability of the substrate W as much as possible (otherwise, the substrate W may be dried and watermark may be generated), the change in the posture of the substrate W is applied to the substrate W in the treatment liquid L. ) is made in the immersed state. In addition, when the substrate W is taken out from the batch-type liquid processing chamber 140 and transferred to the first buffer unit 210 , the remaining substrates W except for the transfer target substrate W are placed in the processing liquid L. By maintaining the immersed state, it is possible to minimize the occurrence of water marks due to drying of the substrate W.

In the above-described example, when the substrate W is transported between the batch-type liquid processing chambers 140 , the storage container C is transported by the first transport unit 132 as an example. it is not For example, the first transfer unit 132 may transfer the plurality of substrates W between the batch-type liquid processing chambers 140 by gripping the plurality of substrates W in a vertical posture instead of the storage container C at once. can

In the above-described example, it has been described that the substrates W are taken out one by one from the third batch type liquid processing chamber 143 and transferred to the first buffer unit 210 as an example, but the present invention is not limited thereto. For example, the second transfer unit 152 may grip the plurality of substrates W at once, and may transport the plurality of substrates W from the storage container C at once. In addition, the second transfer unit 152 may transfer the plurality of substrates W to the first buffer unit 210 at once. At this time, the first buffer unit 210 may supply a chemical or mist to the storage space of the first buffer unit 210 as described above in order to maintain the wettability of the loaded substrates (W).

In the above-described example, it has been described that the substrate processing apparatus 10 according to an embodiment of the present invention includes both the single-wafer liquid processing chamber 230 and the drying chamber 240 as an example, but the present invention is not limited thereto. . For example, the substrate processing apparatus 10 may include only one of the single-wafer liquid processing chamber 230 and the drying chamber 240 .

In the above-described example, the substrate W unloaded from the batch liquid processing chamber 140 is transferred to the single-wafer liquid processing chamber 230 , and after the substrate W is processed in the single-wafer liquid processing chamber 230 . , the substrate W is conveyed to the drying chamber 240 as an example, but is not limited thereto. For example, if the particle level is good, the substrate W from the batch-type liquid processing chamber 140 may be directly transferred to the drying chamber 240 .

In the above-described example, when the substrate W is transported between the batch-type liquid processing chambers 140 of the first processing unit 100 , the first transport unit 132 transports the storage container C Although it has been described as an example, it is not limited thereto. For example, as shown in FIG. 16 , the first transfer unit 132 may have a placement hand that transfers a plurality of (eg, 25) substrates W at once, and the first transfer unit 132 receives Only the plurality of substrates W, not the container C, may be transferred between the batch-type liquid processing chambers 140 . In addition, when the first transfer unit 132 has a placement hand, a storage container C is disposed in each of the batch-type liquid processing chambers 140 , or a support member for supporting the plurality of substrates W may be installed.

The above detailed description is illustrative of the present invention. In addition, the above description shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed herein, the scope equivalent to the written disclosure, and/or within the scope of skill or knowledge in the art. The written embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in the specific application field and use of the present invention are possible. Therefore, the detailed description of the present invention is not intended to limit the present invention to the disclosed embodiments. Also, the appended claims should be construed as including other embodiments.

Courage: F
Storage container: C
Substrate: W
Substrate processing unit: 10
1st process processing unit: 100
1st load port unit: 110
1st index chamber: 120
1st transfer robot: 122
Posture change unit: 124
First transfer chamber: 130
1st transfer unit: 132
Batch liquid processing chamber: 140
1st batch type liquid treatment chamber: 141
Article 1 Treatment: 141a
1st liquid supply line: 141b
1st liquid discharge line: 141c
First heating member: 141d
1st liquid source: 141e
Second batch type liquid treatment chamber: 142
Article 2 processing: 142a
Second liquid supply line: 142b
Second liquid discharge line: 142c
Second heating member: 142d
Second liquid source: 142e
3rd batch type liquid treatment chamber: 143
Second transfer chamber: 150
Second transfer unit: 152
2nd process processing unit: 200
1st buffer part: 210
Third transfer chamber: 220
3rd transfer unit: 222
Single-wafer liquid processing chamber: 230
Drying Chamber: 240
Second buffer part: 250
Second index chamber: 260
2nd transfer robot: 262
2nd load port unit: 270
Substrate processing apparatus provided in the third batch type liquid processing chamber: 300
Treatment tank: 310
Accommodating space: 312
Liquid supply line: 314
Liquid source: 315
Liquid discharge line: 316
Heating element: 320
Posture conversion member: 330
Moving Part: 332
Rotating part: 334
Lifting member: 340
Shaft: 342
Actuator: 344
Controller: 600

Claims (20)

An apparatus for processing a substrate, comprising:
a first process processing unit for liquid-processing a plurality of substrates in a batch manner; and
and a second processing unit that processes the substrate processed by the first processing unit and liquid-treats or dries one substrate in a single-wafer type. According to claim 1,
The first process processing unit,
and a first load port unit in which a container in which an unprocessed substrate is accommodated is placed,
The second process processing unit,
and a second load port unit in which a container in which a processed substrate is received is placed. 3. The method of claim 2,
The first process processing unit,
and a placement hand for transferring the plurality of substrates unloaded from the container placed on the first load port unit;
The second process processing unit,
and a sheetfed hand for transferring one substrate liquid-treated in the first processing unit. 3. The method of claim 2,
The second process processing unit,
a single-wafer processing chamber for liquid-treating and/or drying the substrate in a single-wafer type; and
and a second buffer unit disposed between the single-wafer processing chamber and the second load port unit and temporarily storing the substrate processed in the single-wafer processing chamber. 3. The method of claim 2,
The second process processing unit,
a single-wafer processing chamber for liquid-treating and/or drying the substrate in a single-wafer type; and
and a first buffer unit disposed between the first processing unit and the single-wafer processing chamber and temporarily storing the substrate processed by the first processing unit. According to claim 1,
The first process processing unit,
a treatment tank having an accommodation space in which a treatment liquid is accommodated;
a storage container immersed in the processing liquid accommodated in the accommodation space and having a storage space for accommodating substrates; and
and a posture converting member configured to rotate the storage container immersed in the processing liquid. 7. The method of claim 6,
The posture conversion member,
a rotating part mountable to the storage container and rotating the storage container; and
and a moving part installed in the processing tank and configured to horizontally move the storage container mounted on the rotating part. 8. The method of claim 7,
The treatment tank,
It has a cylindrical shape with an open top,
The moving part,
A substrate processing apparatus installed on a side of the processing tank. 9. The method of claim 8,
The moving part,
A substrate processing apparatus having a 'c' shape with an open portion facing downward so as to be installed over the side of the processing tank. 10. The method according to any one of claims 6 to 9,
The first process processing unit,
Further comprising a lifting member for moving the storage container rotated by the posture conversion member in the vertical direction,
The lifting member is
A substrate processing apparatus detachably provided in the storage container. 11. The method of claim 10,
The second process processing unit,
Further comprising a first buffer unit for temporarily storing the substrate liquid-treated in the first processing unit,
The device is
and a transfer unit for transferring a substrate between the storage container and the first buffer unit. 12. The method of claim 11,
The device is
further comprising a controller;
The controller is
The substrate processing apparatus controls the lifting member and the transfer unit so that the lifting member moves the storage container in an upward direction to transfer the externally exposed substrate from the storage container to the first buffer unit. 13. The method of claim 12,
The device is
further comprising a controller;
The controller is
A substrate processing apparatus for controlling the transfer unit to transport a substrate disposed at an uppermost end among the substrates accommodated in the storage container from the storage container to the first buffer unit. 14. The method of claim 13,
The controller is
After the uppermost substrate is unloaded from the storage container, the lifting member is moved upward to move the storage container so that the topmost substrate among the substrates accommodated in the storage container is exposed to the outside. Controlling substrate processing equipment. An apparatus for processing a substrate, comprising:
a batch processing chamber for cleaning a plurality of substrates in a batch manner;
a single-wafer-type processing chamber that processes the substrates processed in the batch-type processing chamber and dries one substrate in a single-wafer type; and
and a transfer unit for transferring a substrate between the batch-type processing chamber and the single-wafer processing chamber. 16. The method of claim 15,
The batch-type processing chamber,
a treatment tank having an accommodation space in which a treatment liquid is accommodated; and
and a posture converting member immersed in the processing liquid accommodated in the accommodation space and rotating a storage container having a storage space for accommodating substrates. 17. The method of claim 16,
The posture conversion member,
a rotating part mountable to the storage container and rotating the storage container; and
and a moving part installed in the processing tank and configured to horizontally move the storage container mounted on the rotating part. 18. The method of claim 17,
The batch-type processing chamber,
and a lifting member for vertically moving the storage container rotated by the posture converting member. An apparatus for processing a substrate, comprising:
a first process processing unit for liquid-processing a plurality of substrates in a batch manner; and
Includes a second process processing unit for drying one substrate in a single wafer type,
The first process processing unit,
a first load port unit in which only unprocessed substrates are loaded;
a batch processing chamber for cleaning a plurality of substrates in a batch manner;
a first transfer module having a placement hand for transferring a plurality of substrates from the first load port unit to the batch processing chamber; and
a first buffer unit disposed between the batch-type processing chamber and the second processing unit and temporarily storing a substrate;
The second process processing unit,
a single-wafer type processing chamber for drying and processing one substrate in a single-wafer type;
a second transfer module having a single-wafer hand for transferring one substrate to the single-wafer processing chamber by unloading the substrate from the first buffer unit; and
and a second load port unit for unloading the substrate processed in the single-wafer processing chamber. 20. The method of claim 19,
The single-wafer processing chamber,
provided in plurality,
At least some of the single-wafer processing chambers,
arranged to be stacked with the first buffer unit;
Others of the single-wafer processing chambers are
A substrate processing apparatus, arranged to be stacked on each other.

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