KR20220048094A - Phase Shift Blankmask and Photomask using the Flat Panel Display - Google Patents

Abstract

A phase shift blank mask for FPD according to the present invention includes a phase shift film provided on a transparent substrate, and the phase shift film is composed by sequentially placing a flat transmission control layer for controlling transmittance of exposure light, a transmission attenuation layer, and a phase shift layer that controls the amount of phase shift. The present invention can manufacture a high-resolution display by configuring the phase shift film so that the transmittance difference for each wavelength is 2.5% or less for exposure light of complex wavelengths of 436 nm (g-line), 405 nm (h-line), and 365 nm (i-line).

Description

Phase Shift Blankmask and Photomask using the Flat Panel Display

The present invention relates to a phase inversion blank mask and a photomask for a flat panel display, and more particularly, to a phase inversion blank mask for a flat panel display capable of forming a fine pattern by minimizing the difference in transmittance for each wavelength for exposure light of a complex wavelength and to a photomask.

Flat panel displays (hereinafter referred to as FPDs) such as liquid crystal displays (LCDs) and organic light emitting diodes (OLEDs) have expanded their application range as market demands have become more advanced, highly functional, and diversified. There is a demand for development of manufacturing process technology that is inexpensive and has excellent productivity. That is, like a semiconductor device with a high degree of integration, the FPD device also has a high degree of integration and design rules are refined accordingly, and a high pattern resolution and high-precision technology are required to form a fine pattern.

In general, an FPD panel is manufactured by forming a photomask using a blank mask having at least one metal film formed thereon, and applying the photomask to a lithography process.

The blank mask includes a thin film including a metal material formed on a transparent substrate made of synthetic quartz glass or the like, and a resist film formed on the thin film, and the photo mask has a form in which the thin film is patterned from the blank mask.

Here, the thin film may be divided into a light-shielding film, an anti-reflection film, a phase-shifting layer, a semi-transmissive film, a reflective film, etc. according to optical characteristics, and two or more of these thin films may be used in combination.

When manufacturing a photomask for manufacturing an FPD device, a metal film can be formed of various materials including chromium (Cr) and metal silicide (M-Si) compounds. In order to improve the accuracy of the photomask, 436 nm (g-line), A phase shift blank mask including a phase shift layer in which a phase is inverted by approximately 180 degrees with respect to exposure light of individual wavelengths and complex wavelengths of 405 nm (h-line) and 365 nm (iline) is used.

The transmittance of the phase shift layer varies according to the wavelength of the exposure light. When exposure light of a complex wavelength in which several wavelengths are combined is used, if the difference in transmittance according to the wavelength is large, the precision of exposure is lowered. In detail, the difference in transmittance according to wavelength causes a difference in the amount of exposure light, which causes an imbalance in the amount of phase shift. As a result, when exposure light of a complex wavelength is used, the greater the difference in transmittance according to wavelength, the more difficult it is to control the amount of phase shift. Therefore, the phase shift layer should have as little deviation in transmittance with respect to the exposure wavelength of the complex wavelength as possible.

The current phase shift blank mask has a short wavelength (365 nm) and a long wavelength (436) due to the steep transmittance gradient in the complex wavelength band of 436 nm (g-line), 405 nm (h-line), and 365 nm (i-line). nm), the difference in transmittance between them reaches 6% or more. This has a limit in forming a fine pattern due to the difficulty in controlling the exposure amount.

The present invention makes it possible to manufacture a high-resolution display by making the transmittance difference for each wavelength 2.5% or less for exposure light of a complex wavelength of 436 nm (g-line), 405 nm (h-line), and 365 nm (i-line). A phase inversion blank mask and photo mask for possible flat panel displays are provided.

The phase shift blank mask for FPD according to the present invention includes a phase shift film provided on a transparent substrate, wherein the phase shift film includes a flat transmission control layer, a transmission attenuation layer, and a phase for controlling transmittance for exposure light on the transparent substrate A phase shift layer that controls the amount of inversion is sequentially arranged.

The phase shift film has a transmittance of 1% to 20% with respect to exposure light of 365 nm to 436 nm, and a transmittance deviation (maximum transmittance % value - minimum transmittance % value) of 2.5% or less.

The flat transmission control layer is made of a chromium (Cr)-based material or a compound containing any one or more light element materials of oxygen (O), nitrogen (N), and carbon (C).

The transmission attenuation layer is made of a chromium (Cr)-based material or a compound containing any one or more light element materials of oxygen (O) and carbon (C).

The phase shift layer is made of chromium (Cr) or a compound including at least one light element of nitrogen (N), oxygen (O), and carbon (C) in the chromium (Cr).

One or more functional layers are further included on the phase shift layer or below the flat transmission control layer, wherein the functional layer is one of a light blocking layer, a light blocking layer including an anti-reflection layer, a semi-transmissive layer, and an etch stop layer.

The present invention is by constructing a phase shift film so that the transmittance difference for each wavelength is 2.5% or less with respect to exposure light of complex wavelengths of 436 nm (g-line), 405 nm (h-line), and 365 nm (i-line). It is possible to manufacture high-resolution displays.

1 is a cross-sectional view showing a phase shift blank mask for FPD according to an embodiment of the present invention.
2 is a graph of measuring transmittance spectra for each wavelength of a phase inversion blank mask according to Examples and Comparative Examples of the present invention;

In general, in the lithography exposure process for the production of products such as TFT-LCD and OLED, a wavelength of about 300 to 500 nm using a mercury (Hg) lamp as a light source is used.

In this case, the transmittance and the phase shift amount in the wavelength range are different according to the type, composition, thickness, etc. of the material constituting the phase shift layer. In particular, a mercury (Hg) lamp used as a light source has a strong characteristic at wavelengths of 365 nm (i-line), 405 nm (h-line), and 436 nm (g-line). If the transmittance of the phase shift layer is not constant in the above wavelength range, it is difficult to control the exposure dose, and since the transmittance is proportional to the intensity of the exposure light that is phase inverted, it is difficult to expect a uniform phase shift effect. This makes it impossible to control the cross-sectional shape of the photoresist pattern of the subject by the phase inversion pattern, thereby acting as a factor of reducing process instability and process margin. Conversely, if the transmittance is constant in the wavelength range, it is easy to control the cross-sectional shape of the photoresist of the subject because the transmittance and the phase shift amount for the complex wavelength are uniformly controlled. Therefore, the smaller the transmittance deviation with respect to the exposure wavelength, the more advantageous it is to control transmittance and phase shift. An object of the present invention is to provide a phase inversion blank mask in which the transmittance deviation for each wavelength for an exposure light region of a complex wavelength is minimized.

Hereinafter, the present invention will be described in more detail with reference to the drawings.

1 is a cross-sectional view illustrating a phase shift blank mask for FPD according to an embodiment of the present invention.

Referring to FIG. 1 , the phase shift blank mask according to the present invention is a phase shift blank mask for FPD including a liquid crystal display (LCD), an organic light emitting diode (OLED), and the like.

The phase shift blank mask has a structure in which a transparent substrate 102 and a flat transmission control layer 104 , a transmission attenuation layer 106 and a phase shift layer 108 are sequentially stacked on the transparent substrate 102 .

The transparent substrate 102 is a rectangular transparent substrate with one side of 300 mm or more, and may be made of synthetic quartz glass, soda lime glass, alkali-free glass, low thermal expansion glass, or the like.

The flat transmittance control layer 104 has a single layer or a multilayer film having different compositions, and two or more layers in which films of different compositions are laminated at least once each. Here, when the flat transmittance control layer 104 has a single-layer structure, the flat transmittance control layer 104 has the form of a single film in which the composition ratio of the constituent materials is constant or a continuous film in which the composition ratio is continuously changed. The continuous film refers to a film formed by changing process parameters such as reactive gas, power, and pressure during a sputtering process while plasma is turned on.

The flat transmittance control layer 104 essentially contains chromium (Cr), and in order to satisfy the optical, physical, and chemical properties of the thin film, any one or more light element materials of nitrogen (N), oxygen (O), and carbon (C). It consists of a chromium (Cr) compound further comprising a. That is, the flat transmission control layer 104 is made of one of Cr, CrN, CrO, CrCN, CrCO, and CrCON.

Here, in the flat transmission control layer 104, chromium (Cr) is 20at% to 40at%, oxygen (O) is 20at% to 60at%, nitrogen (N) is 10at% to 50at%, and carbon (C) is 5at% It has a composition ratio of ~ 30at%. In addition, it has a thickness of 50 angstroms to 350 angstroms. When the flat transmittance control layer 104 is composed of two or more multilayer films, each layer has a thickness of 50 Å to 100 Å in consideration of adhesion to upper and lower layers, etching characteristics, and optical characteristics. The flat transmission control layer 104 serves to control the mobility of the flat transmission region for each wavelength formed by the transmission attenuation layer 106 having a high extinction coefficient (k). For example, when the transmittance at a wavelength of 400 nm to 450 nm is flat and the transmittance in a wavelength band of 400 nm or less and 450 nm or more has a sharp slope, depending on the composition and thickness of the flat transmittance control layer 104 , the It is possible to move the flat transmission region to a short wavelength or a long wavelength.

The transmission attenuation layer 106 has a single layer or a composition different from each other, and consists of a multilayer film of two or more layers in which films of different compositions are laminated at least once each. Here, when the transmission attenuation layer 106 has a single-layer structure, the transmission attenuation layer 106 has the form of a single film in which the composition ratio of the constituent materials is constant or a continuous film in which the composition ratio is continuously changed.

The transmission attenuation layer 106 according to the present invention essentially contains chromium (Cr) and further contains any one or more light element materials of oxygen (O) and carbon (C) in order to satisfy the optical, physical, and chemical properties of the thin film. It consists of a chromium (Cr) compound containing. That is, the transmission attenuation layer is made of one of Cr, CrC, CrO, and CrCO.

Here, the transmission attenuation layer 106 has a composition ratio of 75at% to 100at% of chromium (Cr), 0at% to 15at% of oxygen (O), and 0at% to 10at% of carbon (C). In addition, the transmission attenuation layer 106 has a thickness of 50 Å to 250 Å, and when the transmission attenuation layer 106 is composed of a multilayer film of two or more layers, each layer considers adhesion and etching characteristics with the layers disposed on the upper and lower sides. to have a thickness of 50 Å to 100 Å.

The transmission attenuation layer 106 controls the amount of change in the extinction coefficient k in a specific wavelength band to implement a flat transmission region. In detail, since the transmittance can be defined as an exponential function of the extinction coefficient (k) and thickness according to the wavelength, the transmittance characteristic can be controlled by adjusting the amount of change in the extinction coefficient in a specific wavelength band. In the present invention, the transmittance of the complex wavelength band of 365nm (i-line) to 436nm (g-line) was flattened by controlling the extinction coefficient (k) and thickness of the thin film.

The phase shift layer 108 according to the present invention has a single layer or a composition different from each other, and consists of a multilayer film of two or more layers in which films of different compositions are laminated at least once each. Here, when the phase shift layer 108 has a single-layer structure, the phase shift layer 108 has the form of a single film in which the composition ratio of the constituent materials is constant or a continuous film in which the composition ratio is continuously changed.

The phase shift layer 108 essentially contains chromium (Cr) and contains one or more light element materials of oxygen (O), nitrogen (N), and carbon (C) in order to satisfy the optical, physical, and chemical properties of the thin film. It further comprises a chromium (Cr) compound. That is, the phase shift layer 108 is made of one of Cr, CrC, CrN, CrCN, CrO, CrCO, and CrCON.

Here, in the phase shift layer 108, chromium (Cr) is 20at% to 40at%, nitrogen (N) is 10at% to 50at%, oxygen (O) is 20at% to 60at%, carbon (C) is 5at% to 5at% It has a composition ratio of 30at%. In addition, the phase shift layer 108 has a thickness of 500 angstroms to 1400 angstroms, preferably, has a thickness of 700 angstroms to 1200 angstroms. When the phase shift layer 108 is composed of a multilayer film of two or more layers, each layer has a thickness of 100 Å to 1000 Å in consideration of adhesion to the upper and lower layers and etching characteristics.

The phase shift film according to the present invention including the flat transmission control layer 104, the transmission attenuation layer 106, and the phase shift layer 108 has tantalum (Ta), vanadium (V) in order to improve physical, chemical and optical properties. ), cobalt (Co), nickel (Ni), zirconium (Zr), niobium (Nb), palladium (Pd), zinc (Zn), aluminum (Al), manganese (Mn), cadmium (Cd), magnesium ( Mg), lithium (Li), selenium (Se), copper (Cu), hafnium (Hf), tungsten (W), it may be configured to further include one or more of one or more metal materials of silicon (Si).

The flat transmission control layer 104, the transmission attenuation layer 106, and the phase shift layer 108 constituting the phase shift film can be formed by various methods using physical or chemical vapor deposition, preferably DC magnetron sputtering ( Sputtering) is used to form it.

When the flat transmission control layer 104, the transmission attenuation layer 106, and the phase shift layer 108 are each composed of two or more multilayer films, each of the thin films may be etched with the same etching material.

The phase shift blank mask including the flat transmission control layer 104 , the transmission attenuation layer 106 , and the phase shift layer 108 is formed so that the edge cross-section of the pattern has a vertical shape during the etching process for manufacturing the photo mask. It is configured such that the etching rate is controlled by changing the composition ratio of each layer. That is, the flat transmission control layer 104 , the transmission attenuation layer 106 , and the phase shift layer 108 may each be composed of a multilayer film of a chromium (Cr) compound, and the composition or composition ratio of each layer is adjusted differently. Thus, the etching rate can be controlled. In addition, the thin film constituting the phase shift blank mask may be configured to have a slower etch rate toward the upper direction from the transparent substrate, or a cross-sectional inclination of the pattern may be formed vertically through a combination of layers having different etch rates.

The phase shift film composed of the flat transmission control layer 104, the transmission attenuation layer 106, and the phase shift layer 108 is 436 nm (g-line), 405 nm (h-line), 365 nm (i-line). ) has a phase shift amount of 160° to 200° with respect to exposure light of a complex wavelength including, preferably, a phase shift amount of 170° to 190°, 40° or less, preferably 20° or less, Preferably, it has a phase difference deviation of 10° or less. In addition, the phase shift film has a transmittance of 1% to 30% with respect to exposure light of a complex wavelength including 436 nm (g-line), 405 nm (h-line), and 365 nm (i-line), preferably, It has a transmittance of 3% to 20%, and a transmittance deviation of 2.5% or less, preferably a transmittance deviation of 1% or less.

In addition, the phase shift blank mask for FPD according to the present invention has at least one functional layer in addition to the flat transmission control layer 104 , the transmission attenuation layer 106 , and the phase shift layer 108 provided on the transparent substrate 102 . It may comprise a membrane.

The functional film may be formed on the upper portion of the phase shift layer 108 or the lower portion of the flat transmittance control layer 104, and includes one or more of the films necessary for the transfer pattern, including a light blocking film, a semi-transmissive film, and an etch stop film. is composed For example, when the functional film includes a light-shielding film, the light-shielding film is a single film having both a function of blocking light and a function of preventing reflection, or a light-shielding layer and reflection having the same configuration and composition or different configurations. A barrier layer may be included. When the functional layer further includes an etch stop layer, the etch stop layer considers the etching selectivity between the transparent substrate 102 and the flat transmission control layer 104, the phase shift layer 108 and the light blocking layer, and the light blocking layer and the transparent substrate It may further include an etch stop film formed by

The functional layer can be patterned and removed by a dry etching or wet etching process in the same way as the flat transmission control layer 104, the transmission attenuation layer 106, and the phase shift layer 108, and the flat transmission control layer 104, The transmission attenuation layer 106 and the phase shift layer 108 may be made of a material having the same etching properties, or may be configured to have a mutual etching selectivity.

The light blocking layer, the antireflection layer, the semi-transmissive layer pattern, and the etch stop layer pattern that may be formed of the functional layer include chromium (Cr), silicon (Si), molybdenum, tantalum (Ta), vanadium (V), cobalt ( Co), nickel (Ni), zirconium (Zr), niobium (Nb), palladium (Pd), zinc (Zn), aluminum (Al), manganese (Mn), cadmium (Cd), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), hafnium (Hf), tungsten (W), titanium, platinum, yttrium (Y), iron (Fe), selenium (Se), indium (In), sulfur ( S), tin (Sn), boron (B), sodium (Na), is made of including any one or more metal materials of beryllium (Be), or, in the metal material nitrogen (N), oxygen (O), It further comprises any one or more materials of carbon (C).

A phase shift photomask for FPD may be formed using the phase shift blank mask for FPD according to the present invention described above.

Hereinafter, a phase shift blank mask for FPD according to an embodiment of the present invention will be described in detail.

(Example)

Phase Inversion Blank Mask Evaluation

Referring to FIG. 1, the flat transmission control layer 104, the transmission attenuation layer 106, and the phase shift layer 108 of a chromium (Cr) compound are sequentially formed on a transparent substrate using DC magnetron sputtering to form a phase An inverted blank mask was prepared.

The flat transmission control layer 104 was formed of a CrCON single film having a thickness of 50 Å to 400 Å using a mixed gas of argon (Ar), nitrogen (N2), oxygen (O2), and methane (CH4). The transmission attenuation layer 106 was formed of a Cr or CrCO single film having a thickness of 100 Å to 300 Å using a mixed gas of argon (Ar), carbon dioxide (CO 2 ), and methane (CH 4 ). The phase shift layer 108 was formed to a thickness of 700 Å to 1100 Å using a mixed gas of argon (Ar), nitrogen (N2), carbon dioxide (CO2), and methane (CH4).

Table 1 shows sputtering process conditions for the configuration of the phase shift blank mask according to Comparative Examples and Examples of the present invention.

comparative example Example 1 Example 2 Example 3 phase shift layer process gas
(%) Ar 20 to 40 10 to 40 10 to 40 10 to 40 N2 30 to 80 20 to 70 20 to 70 20 to 70 CO2 5 to 20 10 to 40 10 to 40 10 to 40 CH4 0.1 to 10 0 to 30 0 to 30 0 to 30 Process power (kw) 5 6 to 7 6 to 7 6 to 7 transmission attenuation layer process gas
(%) Ar - 75 to 100 75 to 100 75 to 100 N2 - - - - CO2 - 0 to 20 0 to 20 0 to 20 CH4 - 0 to 5 0 to 5 0 to 5 Process power (kw) - 6 to 7 6 to 7 6 to 7 flat penetration
control layer process gas
(%) Ar - 10 to 60 10 to 60 10 to 60 N2 - 20 to 70 20 to 70 20 to 70 CO2 - 10 to 40 10 to 40 10 to 40 CH4 - 0 to 20 0 to 20 0 to 20 Process power (kw) - 5 to 6 5 to 6 5 to 6

Referring to Table 1, Examples 1 to 3 of the present invention are composed of three layers of a flat transmission control layer 104, a transmission attenuation layer 106, and a phase shift layer 108, A phase shift blank mask was formed by using argon (Ar) and selectively using at least two or more gases of nitrogen (N2), carbon dioxide (CO2), and methane (CH4) as an active gas. At this time, the thin films constituting the respective layers are arranged to have the same or different composition. The comparative example of the present invention uses argon (Ar) as an inert gas and selectively uses at least two or more gases of nitrogen (N2), carbon dioxide (CO2), and methane (CH4) as an active gas to reverse the phase of CrCON composition layer was formed.

Table 2 shows the transmittance and phase shift amount according to Examples and Comparative Examples of the present invention, and FIG. 2 is a graph measuring the transmittance spectrum for each wavelength of the phase shift blank mask according to Examples and Comparative Examples of the present invention. .

comparative example Example 1 Example 2 Example 3 Single phase shift layer / transparent substrate Phase shift layer / Transmission attenuation layer /
Flat transmittance control layer/transparent substrate
Phase difference (°)
@365nm 180.12 179.33 180.38 180.75 Transmittance (%)
@365nm 4.58 4.43 4.54 4.49 Transmittance (%)
@405nm 8.18 5.60 5.92 5.12 Transmittance (%)
@436nm 11.33 5.37 5.69 5.01 Transmittance deviation
(%)
@365nm-436nm 6.64 0.72 1.07 1.51

Referring to Table 2 and Figure 2, the transmittance and the phase shift amount at the 365 nm wavelength are at the same level, but the transmittance deviation in the 365 nm to 436 nm wavelength band is 6.64% in Comparative Examples, compared to 6.64% in Examples 1 to 3, 0.72 % ~ 1.51%, showing very good properties.

As shown in Table 2 and FIG. 2, the phase shift blank mask according to the present invention has a low transmittance deviation in the exposure wavelength band due to the transmittance attenuation film 106 located below the phase shift layer 108. By providing the mask, it is easy to control the exposure light amount and the phase shift amount. Therefore, the phase shift blank mask of the present invention can realize high resolution due to the uniformity of transmittance when exposure light composed of a complex wavelength of 365 nm to 436 nm is used.

Above, the present invention will be described in detail through examples of the present invention with reference to the drawings, but the examples are only used for the purpose of illustration and description of the present invention and limit the meaning of the present invention described in the claims. It is not used to limit the scope. Therefore, those of ordinary skill in the art will understand that various modifications and equivalent other embodiments are possible from the embodiments. Therefore, the true technical protection scope of the present invention will have to be determined by the technical matters of the claims.

102: transparent substrate 104: flat transmission control layer
106: transmission attenuation layer 108: phase shift layer

Claims (14)

As a phase shift blank mask for FPD (Flat Panel Display) provided with a phase shift film on a transparent substrate,
The phase shift film is a phase shift blank mask for FPD configured by sequentially disposed on a transparent substrate a flat transmission control layer for controlling transmittance with respect to exposure light, a transmission attenuation layer and a phase shift layer for controlling the amount of phase shift. The method of claim 1,
The phase shift film has a transmittance of 1% to 20% with respect to exposure light of 365 nm to 436 nm, and a transmittance deviation of 2.5% or less (maximum transmittance % value - minimum transmittance % value) for FPD phase Invert blank mask. The method of claim 1,
The phase shift layer is chromium (Cr), molybdenum (Mo), tantalum (Ta), vanadium (V), cobalt (Co), nickel (Ni), zirconium (Zr), niobium (Nb), palladium (Pd) , Zinc (Zn), Aluminum (Al), Manganese (Mn), Cadmium (Cd), Magnesium (Mg), Lithium (Li), Selenium (Se), Copper (Cu), Hafnium (Hf), Tungsten (W) , FPD comprising any one or more metal materials of silicon (Si), or further comprising one or more materials of nitrogen (N), oxygen (O), and carbon (C) in the metal material Phase inversion blank mask for dragons. The method of claim 1,
The flat transmission control layer is made of a chromium (Cr)-based material or for FPD, characterized in that it is made of a compound containing any one or more light element materials of oxygen (O), nitrogen (N), and carbon (C) Phase inversion blank mask. The method of claim 1,
The flat transmission control layer has a thickness of 50 Å to 350 Å, and when the flat transmission control layer is composed of two or more multilayer films, each layer has a thickness of 50 Å to 100 Å. mask. The method of claim 1,
The transmission attenuation layer is made of a chromium (Cr)-based material or a compound containing any one or more light element materials of oxygen (O) and carbon (C),
The phase shift blank mask for FPD, characterized in that the content of the light element material included in the transmission attenuation layer is less than that of the phase shift layer and the flat transmission control layer. The method of claim 1,
The transmission attenuation layer has a thickness of 50 Å to 250 Å, and when the transmission attenuation layer is formed of two or more multilayer films, each layer has a thickness of 50 Å to 100 Å. The method of claim 1,
The phase shift layer has a mutually different composition, and consists of two or more multilayers in which films of different compositions are stacked at least once each,
At least one of the phase shift layers is a phase shift blank mask for FPD consisting essentially of chromium (Cr). The method of claim 1,
The phase shift layer is made of chromium (Cr) or FPD characterized in that the chromium (Cr) is made of a compound including at least one light element of nitrogen (N), oxygen (O), and carbon (C) Phase inversion blank mask for dragons. The method of claim 1,
The phase shift layer has a thickness of 700 Å to 1200 Å, and when the phase shift layer is formed of two or more multilayer films, each layer has a thickness of 100 Å to 1000 Å. The method of claim 1,
The phase shift film has a phase difference of 160° to 200° with respect to exposure light of 350 nm to 450 nm, and a phase shift blank for PFD, characterized in that it has a phase difference deviation of 20° or less (maximum phase difference value - minimum phase difference value) mask. The method of claim 1,
FPD, characterized in that at least one functional film is further included on the upper portion of the phase shift layer or on the lower portion of the flat transmittance control layer, wherein the functional film is one of a light blocking layer, a light blocking film including an anti-reflection layer, a semi-transmissive film, and an etch stop layer Phase inversion blank mask for dragons. 14. The method of claim 13,
The functional layer is chromium (Cr), molybdenum (Mo), tantalum (Ta), vanadium (V), cobalt (Co), nickel (Ni), zirconium (Zr), niobium (Nb), palladium (Pd), Zinc (Zn), Aluminum (Al), Manganese (Mn), Cadmium (Cd), Magnesium (Mg), Lithium (Li), Selenium (Se), Copper (Cu), Hafnium (Hf), Tungsten (W), For FPD, comprising any one or more metal materials of silicon (Si), or further comprising one or more materials of nitrogen (N), oxygen (O), and carbon (C) in the metal material Phase inversion blank mask. A phase shift photomask for FPD manufactured using the phase shift blank mask for FPD of any one of claims 1 to 13.

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