KR20220000743A - Rectifier having schottky diode - Google Patents

Abstract

According to the present invention, disclosed is a rectifier which comprises an RF power source, a matching network, a Schottky diode and a load. The Schottky diode comprises a spare current source connected in parallel between an anode terminal and a cathode terminal, a junction resistor and a junction capacitor.

Description

Rectifier having schottky diode

The present invention relates to a rectifier, and more particularly, to a rectifier for wireless power transmission of medical implant devices (MIDs).

A variety of devices, including mobile phones, tablet PCs, and implantable medical devices, are powered by rechargeable batteries. These devices receive power from the outside through a physically connected cable or the like to charge a battery. However, charging through a cable often has disadvantages such as inconvenient or cumbersome. Accordingly, a wireless power transmission device capable of charging a device without using a cable or the like has been developed.

Meanwhile, an implantable medical device refers to a medical device that is inserted into the human body, and has recently been utilized for diagnosis and treatment of diseases. These implantable medical devices may include deep brain stimulation systems used in deep brain stimulation (DBS), pacemakers, implantable cardioverter defibrillators (ICDs), and neurostimulators. can Such an implantable medical device may be inserted into the human body for a long period of time to detect a disease or alleviate symptoms of the disease.

In order for an implantable medical device to work in the body, it must continuously provide power to the implantable medical device. However, for implantable medical devices, wired charging is risky, and wireless charging is therefore safer.

In recent years, for wireless power receivers in the ISM band (Industrial, Scientific and Medical band), a frequency band designated for use in industrial, scientific, and medical devices, the design of a rectifier is a potential consideration, such as an important module inside an implantable medical device. has been accepted as [Non-Patent Document 1]. In addition, RF-DC conversion efficiency is one of the important factors for expanding the battery capacity of MIDs [Non-Patent Document 2].

In order to obtain high rectification efficiency in a wide input power range, several techniques exist. Non-Patent Document 3 suggests that a 100 MHz rectifier can be extended to an input power range of -14 dBm to 21 dBm by utilizing the depletion mode of an N-FET like a switch. Non-Patent Document 4 was improved as a result of reaching up to 58% when the rectifier efficiency was -6 dBm based on the optimal waveform analysis. A 433 MHz rectifier was used for wireless power transmission even in Non-Patent Document 5, in which a triple-band implantable rectifying antenna was proposed. In Non-Patent Document 6, a 2.45 GHz rectifier having a maximum efficiency (simulation value) of 44% when the input power is -5 dBm is also designed for an implantable rectifying antenna. In Non-Patent Document 7, compared with a general rectifier, an extension technique for wideband input power improved by 7.2 dB has been proposed.

However, although the current waveform rectification of a Schottky diode in this design is rarely described, as pointed out in Non-Patent Document 8, the rectification may reduce the output DC and the efficiency of the rectifier. 1(a) and 1(b) are rectified current waveform diagrams of 433 MHz and 2.45 GHz, respectively. As shown in FIG. 1, when 433 MHz, the current ratio between the forward and reverse directions of half-wave rectification is greater than when 2.45 GHz. . Therefore, time domain Schottky diode modeling is necessary when the operating frequency of the Schottky diode is not mentioned in the datasheet. In addition, since the wavelength of 433 MHz is long in order to have a compressed size and high efficiency, a distributed element in a matching network is not suitable.

Korean Patent Publication No. 10-2019-0035753

[1] Z. Liu, Z. Zhong, and Y. Guo, “In Vivo High-Efficiency Wireless Power Transfer With Multisine Excitation,” IEEE Transactions on Microwave Theory and Techniques, vol.65, no.9, pp.3530- 3540, Sep. 2017. [2] G. Monti, MVD Paolis, L. Corchia, and L. Tarricone, “Wireless resonant energy link for pulse generators implanted in the chest,” Antennas Propagation IET Microwaves, vol.11, no.15, pp.2201- 2210, 2017. [3] H. Sun, Z. Zhong, and Y. Guo, “An Adaptive Reconfigurable Rectifier for Wireless Power Transmission,” IEEE Microwave and Wireless Components Letters, vol.23, no.9, pp.492-494, Sep. 2013. [4] A. Collado and A. Georgiadis, “Optimal Waveforms for Efficient Wireless Power Transmission,” IEEE Microwave and Wireless Components Letters, vol.24, no.5, pp.354-356, May 2014. [5] F. Huang, C. Lee, C. Chang, L. Chen, T. Yo, and C. Luo, “Rectenna Application of Miniaturized Implantable Antenna Design for Triple-Band Biotelemetry Communication,” IEEE Transactions on Antennas and Propagation , vol.59, no.7, pp.2646-2653, Jul. 2011. [6] C. Liu, Y. Guo, H. Sun, and S. Xiao, “Design and Safety Considerations of an Implantable Rectenna for Far-Field Wireless Power Transfer,” IEEE Transactions on Antennas and Propagation, vol.62, no .11, pp.5798-5806, Nov. 2014. [7] P. Wu, SY Huang, W. Zhou, ZH Ren, Z. Liu, K. Huang, and C. Liu, “High-Efficient Rectifier With Extended Input Power Range Based on Self-Tuning Impedance Matching,” IEEE Microwave and Wireless Components Letters, vol.28, no.12, pp.1116-1118, Dec. 2018. [8] T. Funaki, T. Kimoto, and T. Hikihara, “Evaluation of High Frequency Switching Capability of SiC Schottky Barrier Diode, Based on Junction Capacitance Model,” IEEE Transactions on Power Electronics, vol.23, no.5, pp.2602-2611, Sep. 2008. [9] J. Ou, SY Zheng, AS Andrenko, Y. Li, and H. Tan, “Novel Time-Domain Schottky Diode Modeling for Microwave Rectifier Designs,” IEEE Transactions on Circuits and Systems I: Regular Papers, vol.65 , no. 4, pp. 1234-1244, Apr. 2018.

The present invention provides a rectifier having a time domain Schottky diode for wireless power transmission.

The present invention provides a rectifier capable of improving the efficiency by using an integer element for the Q factor of an input matching network.

A rectifier according to a first aspect of the present invention comprises an RF power source, a matching network, a Schottky diode and a load, wherein the Schottky diode comprises a spare current source connected in parallel between an anode terminal and a cathode terminal, a junction resistor and a junction capacitor. .

and a series resistor coupled between the matching network and the Schottky diode.

In the Schottky diode, as the input power increases, the current decreases and the saturated output DC voltage increases.

The Schottky diode has a current of -3mA and a saturated output DC voltage of 3.7V at an input power of 12dBm.

A rectifier according to a second aspect of the present invention includes an RF power source, a matching network, a Schottky diode, and a load, wherein the matching network includes a first inductor connected in series with the RF power source, and first and second capacitors connected in parallel with the RF power source includes

The matching network further includes a second inductor connected in parallel with the second capacitor.

A rectifier according to a third aspect of the present invention comprises an RF power source, a matching network, a Schottky diode and a load, wherein the matching network comprises a series LC circuit comprising a first capacitor and a first inductor connected in series, and a second parallel connected second and a parallel LC circuit including a capacitor and a second inductor, wherein the series LC circuit and the parallel LC circuit are connected in parallel.

In the matching network, the Q factor and transmission loss are maximized at a frequency of 433 MHz, and the return loss is minimized.

The matching network has a Q factor of 10 to 12 at a frequency of 433 MHz, a transmission loss of -23 dB to -25 dB, and a return loss of 0 dB to -1 dB.

A rectifier according to a fourth aspect of the present invention comprises an RF power source, a matching network, a Schottky diode and a load, wherein the Schottky diode comprises a spare current source connected in parallel between an anode terminal and a cathode terminal, a junction resistor and a junction capacitor, , the matching network includes a first inductor connected in series with the RF power supply, and first and second capacitors connected in parallel with the RF power supply.

and a series resistor coupled between the matching network and the Schottky diode.

The matching network further includes a second inductor connected in parallel with the second capacitor.

The Schottky diode has a current of -3mA and a saturated output DC voltage of 3.7V at an input power of 12dBm.

The input power range is -6.8dBm to 12.1dBm.

It is implemented on a TLC-32 substrate and has a size of 1.1 cm×0.4 cm.

In the present invention, by designing a microwave Schottky diode in the time domain, a DC voltage and optimum input resistance are obtained in a high input power range when a current waveform is determined and flowed at each input power. can be obtained That is, by designing the Schottky diode on the time axis, it can have a maximum DC output voltage of about 12.1 dBm according to the diode period at the center frequency.

In addition, the parallel capacitor is connected to the series and parallel inductors at the input terminal to improve the Q factor of the matching network (matching network). Accordingly, power loss can be reduced in a wide input power range, and rectification efficiency can be improved.

In addition, the present invention can extend the input power range in which the Q factor of the time-base Schottky diode and the matching network exceeds 50% of conversion efficiency from -6.8 dBm to 12.1 dBm. In addition, the size of the rectifier can be reduced by using a finite no-load Q-factor rectifying element suitable for integration into medical implants.

1 is a waveform diagram of a rectified current of 433 MHz and 2.45 GHz;
2 is a circuit diagram of a rectifier having a time-base Schottky diode according to an embodiment of the present invention.
3 is a circuit diagram of a time-axis Schottky diode according to an embodiment of the present invention.
4 is a graph showing a simulation result of a rectifier according to an embodiment of the present invention.
5 is a graph comparing characteristics of a rectifier circuit to which a matching network according to the present invention and a general matching network are respectively applied;
6 is a circuit diagram of a rectifier to which a general matching network according to a comparative example is applied.
7 is a simulation graph of DC voltage and efficiency of a 433 MHz rectifier to which a matching network and a time-axis Schottky diode are applied.
8 is a view for explaining an implementation example and an experimental method of a rectifier having a time axis Schottky diode according to the present invention.
9 is a graph showing the measured efficiency and the DC voltage of the rectifier in the range of -13 dBm to 14 dBm at an input power of 433 MHz;

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, and only these embodiments allow the disclosure of the present invention to be complete, and the scope of the invention to those of ordinary skill in the art It is provided for complete information. In order to clearly express the various layers and each region in the drawings, the thickness was enlarged and the same reference numerals were used to refer to the same elements in the drawings.

2 is a circuit diagram of a rectifier having a time axis Schottky diode according to an embodiment of the present invention, and FIG. 3 is a circuit diagram of a time axis Schottky diode according to an embodiment of the present invention.

2 and 3, the rectifier according to an embodiment of the present invention includes an RF power source (RFin), a matching network (matching network) 100, a time axis Schottky diode 200 and a load (300) can do. The rectifier according to the present invention can be implemented on a predetermined substrate, for example, a TLC-32 substrate, and has a size of 1.5 cm × 1.0 cm or less, preferably 1.1 × 0.4 cm, suitable for integration into a medical implantation device. can have

The matching network 100 may be provided for impedance matching. The matching network may include inductors and capacitors connected in series and parallel with the RF power source RFin. Impedance matching may be performed by detecting a reflected wave of the RF power transmitted from the RF power source RFin, and adjusting the capacitance of the capacitor or the inductance of the inductor based on the detected reflected wave. The matching network 100 may include, for example, first and second capacitors C11 and C12 connected in parallel with the RF power source RFin, and a first inductor L11 connected in series with the RF power source RFin. . In this case, the first and second capacitors C11 and C12 may be connected in parallel with the first inductor L11 interposed therebetween. That is, in the matching network 100 , the first inductor L11 and the first and second capacitors C11 and C12 may be connected in a pi (π) shape. Also, the matching network 100 may further include a second inductor L12 connected in parallel with the second capacitor C12. Here, the first and second capacitors C11 and C12 may have the same capacitance, and the first and second inductors L11 and L12 may have different inductances. For example, the first and second capacitors C11 and C12 may have a capacitance of 5 pF to 10 pF, preferably 6.8 pF. Also, the first inductor L11 may have a greater inductance than the second inductor L12 . For example, the first inductor L11 may have an inductance of 60nH to 80nH, preferably 72nH, and the second inductor L12 may have an inductance of 20nH to 30nH, preferably 25nH.

The time axis Schottky diode 200 is connected between the matching network 100 and the load 300 . That is, the anode terminal (Anode) may be connected to the matching network 100 , and the cathode terminal (Cathode) may be connected to the load 300 . The time-base Schottky diode 200 may include an auxiliary current source 210 , a junction resistor 220 , and a junction capacitor 230 connected in parallel to each other as shown in FIG. 3 . That is, the auxiliary current source 210 is connected between the matching network 100 and the load 300 , the junction resistor 220 is connected in parallel with the auxiliary current source 210 , and the junction capacitor 230 is connected to the junction resistor 220 . can be connected in parallel with In addition, a series resistor 240 connected between the anode terminal and the matching network 100 may be further included. That is, the series resistor 240 may be connected in series between the matching network 100 and the anode terminal (Anode).

The load 300 may include a capacitor C12 and a resistor R11. In this case, the capacitor C12 and the resistor R11 may be connected in parallel to each other.

In the rectifier circuit as described above, when the DC saturation voltage is different at 433 MHz, the time axis design is appropriate as a method for obtaining the optimal impedance of the microwave Schottky diode. The relationship between the current waveform of the rectifier and the DC output can be expressed as Equation (1).

Here, I _DC is a direct current flowing through the matching network 100 and the load resistor R11. I _in is a current from the RF power source RFin and I _d is a current flowing through the Schottky diode 200 . I _r and I _c are currents passing through the junction resistor 220 and the junction capacitor 230 of the Schottky diode 200 , respectively. In order to add the waveform of the Schottky diode current (I _d ), as shown in FIG. 3 , a current power source of a single frequency, that is, an auxiliary current source 210 was added between the anode terminal and the cathode terminal. At each input power, DC voltage and rectification efficiency can be obtained in the following three steps. 1) Remove the parallel DC capacitor matching network and find the rms value of _{I d . 2) Add I d} to the single frequency current power supply and perform the experiment. 3) The conversion efficiency is determined based on the output DC voltage and the optimum load resistance.

4 is a graph showing a simulation result of a rectifier according to an embodiment of the present invention, and is a graph showing a Schottky diode current (I _d ) and a saturated output DC voltage (DC voltage) according to input power (dBm) . As shown in FIG. 4 , as the input power increases, the Schottky diode current I _d decreases and the saturated output DC voltage increases. However, when the input power is 12dBm, the Schottky diode current (I _d ) is -3mA and the saturation output DC voltage is 3.7V.

The DC output voltage (V _DC ) may be expressed as in Equation (2).

가 To일 때 V'_j는 접합 전압(V_j)의 DC 성분을 명시하고, R_S는 직렬 저항(240)의 저항값이다. V'_j는 수학식 3과 같이 같이 유도될 수 있다.Here, I _DC is a DC output current, and R _L is a resistance value of the load resistor R11. commutation cycle

When is To, V′ _j specifies the DC component of the junction voltage V _{j , and R S} is the resistance value of the series resistor 240 . V' _j can be derived as in Equation 3.

V _br is the breakdown voltage of the diode. In Equation 1, since I' _DC and I _d have the same indication, I _d indicates a DC component when flowing through the series resistor 240 . Equations 2 and 3 show that the output V _DC of the rectifier is highly dependent on the junction voltage V _{j and the center frequency.} The optimal input impedance of the rectifier may be extended using Equation 3 . This is because, when the input power is high, the output voltage saturation of the rectifier is free from the maximum reverse voltage of a general Schottky diode. In addition, V′ _j is the DC component of the junction voltage V _j , meaning that the maximum DC voltage can be high and higher than _{V BR} /2 when the frequency is low due to a long _{period T 0 .} In the mathematical expression, V _BR /2≤V _DC < V _BR , and the maximum DC voltage at microwave frequency (HSMS-2850 in this design) in the diode data sheet is equal to _{V BR /2 at frequencies of 2.45 GHz and 5.8 GHz} . On the other hand, in the conventional frequency domain-based Schottky diode, the maximum DC output voltage is half the breakdown voltage of the data sheet (V _DC =V _BR /2). If the frequency is too low compared to the microwave frequency (2.45 GHz and 5.8 GHz specifically), _{it is much higher than V BR} /2, so we need to build a time-base model to recalculate the appropriate maximum DC voltage. With a maximum DC output voltage of half the breakdown voltage of the data sheet, or V _DC =V _BR /2, a range of up to 12.1dBm would never be achieved with conventional models.

Meanwhile, the Q factor is an important factor in the matching network 100 . This is because the Q factor determines the energy dissipation within the finite no-load Q factor of inductors and other integer elements. 5 is a graph comparing characteristics of a rectifier circuit to which a matching network according to the present invention and a general matching network are applied, respectively, and Q factor according to frequency (MHz), transmission loss and return loss are compared and shown. At this time, the matching network applied to the rectifier according to the present invention is a π-type matching network in which two capacitors C11 and C12 and an inductor L11 are connected in parallel as shown in FIG. 2, and a general matching network is shown in FIG. As shown above, one capacitor and one inductor are connected in parallel. That is, a general matching network is composed of LC, and the π-type matching network is based on the no-load Q factor of the inductor. In general, the quiescent Q factor of inductor and capacitor should be considered, but the quiescent Q factor of the capacitor is much higher than that of the inductor, so we design a high Q multi-stage matching network based on the quiescent Q factor of the inductor. Specifically, the π-type matching network according to the present invention is composed of two stages, the first stage is a series LC circuit consisting of a first capacitor (C11) and a first inductor (L11), and the second stage is a second capacitor (C12) and a second inductor (L12) in a parallel LC circuit. Here, the series LC circuit helps to match the load impedance of the Schottky diode to 50Ω after the overall Q factor is increased by the parallel LC circuit.

The approximate efficiency of the two-step matching is [Equation 4].

Here, Qu is the unloaded Q coefficient of the inductor, Qn is the Q coefficient of each stage, Qsource,n is the Q coefficient of the source impedance of each stage, the number of stages. For the Q coefficient of the source impedance of each stage, Xs and Rs may be calculated by [Equation 5], which are the reactance and resistance of the source, respectively.

In addition, in FIG. 5, the characteristic graph of the π-type matching network according to the present invention is indicated by a dotted line, and the general matching network is indicated by a solid line. As shown in Fig. 5, a general matching network focuses only on the transmission loss of the matching network. That is, in the matching network according to the present invention, the Q factor and transmission loss are maximized at a frequency of 433 MHz, and the return loss is minimized. 5, the matching network according to the present invention has a Q factor of about 11 at a frequency of 433 MHz, a transmission loss of about -24 dB, and a return loss of about -1 dB. On the other hand, in a typical matching network, the return loss is minimal above 433 MHz, and the Q factor and transmission loss remain almost constant at all frequencies. 5, the typical matching network has a return loss of about -17 dB at a frequency of 433 MHz, a Q factor of about 11 to 12 at all frequencies is kept almost constant, and the transmission loss at all frequencies is It remains almost constant at about -24 dB to -25 dB. That is, as shown in FIG. 5 , the two-step matching network, that is, the π-type matching network, has a higher Q coefficient than the general matching network, so that the efficiency is increased. As shown in Equation 6, the Q factor of the matching network is related to a bandwidth of 3 dB.

Here, f _l and f _h are the lower and upper frequencies at -3dB, respectively. In the present invention, by using a π-type matching network based on the no-load Q factor of the inductor, the transmission loss is 0.9dB greater than that of the general matching network at 433 MHz, but the Q factor is improved by 9.1.

The simulation results of the rectification efficiency and the output DC voltage are shown in FIG. 7 . That is, FIG. 7 is a simulation result of DC voltage and efficiency of a 433 MHz rectifier to which a matching network and a time-axis Schottky diode are applied. That is, a comparative example using a general matching network in which one inductor and one capacitor are connected in parallel and a general Schottky diode, and an embodiment of the present invention using a π-type matching network in which one inductor and two capacitors are connected in parallel are used 1 (Optical Q factor) and a simulation result of DC voltage and efficiency according to Example 2 (with TD model) of the present invention using a time-axis Schottky diode in a π-type matching network are shown in FIG. 7 . As shown in Fig. 7, in the case of a typical HSMS-2850 Schottky diode with a library of ADS, the DC output (V _DC ) is limited by the maximum reverse voltage of the Schottky diode, but the time-base design is the DC output (V _DC ) It is related to the junction voltage (V _j ) and the breakdown voltage (V _br ).

For a more in-depth demonstration, the proposed rectifier was implemented on a TLC-32 substrate as shown in Fig. 8(a). It measures 1.1 cm x 0.4 cm and is small enough to be integrated into an implantable device as shown in Fig. 8(a). The circuit measurement method is shown in FIG. 8(b). The signal generator swept the input power from -13dBm to 14dBm at 433MHz, and the magnitude of the input power of the rectifier was tested using a spectrum analyzer. The input power of the signal generator is branched and input to the rectifier and the spectrum analyzer by a directional coupler. Also, the output DC voltage of the rectifier is measured as VOM. When the input power signal of 10dBm is rectified, the output DC voltage is measured and displayed as VOM as shown in FIG. 8(c). 9 shows the measured efficiency and the DC voltage of the rectifier when the input power is in the range of -13 dBm to 14 dBm at 433 MHz. When the input power is from -6.8dBm to 12.1dBm, the efficiency has been measured to be over 50%, resulting in a total broadband of 18.9dBm. The maximum measurement efficiency was 64.4% at 5dBm, which is 8.6% lower than the maximum efficiency value at 9dBm in simulation. However, the measured DC voltage was only 0.246V lower than the simulated DC voltage at the same input power. At high power, the measurement range was 1.1dB less than the simulation result. When a small difference in the output DC voltage can slightly change the rectifier efficiency, the error in maximum efficiency can be attributed to the high load resistance.

Table 1 is a table comparing the non-patent literature of the prior art literature and the rectifier of the present invention. As shown in Table 1, the range in which the conversion efficiency of the rectifier according to the present invention exceeds 50% is not the widest, but it is possible to implement a rectifier of the smallest size compared to the non-patent literature.

Reference Topology
& technique Frequency
(MHz) Dimension
(mm×mm) Dynamic range (dB)
for η>50% Non-patent document 3 Reconfigurable diodes in shunt 100 55×44 35 Non-patent document 4 Diode in series
(chaotic signal) 433 N.A. 11 Non-patent document 6 Diode in series 2450 14×7 14.5
(for η>40%) Non-patent document 7 Diode in shunt
(self-tunning) 2400 30×19 23 the present invention Diode in series
(time domain) 433 11×4 18.9

As described above, the present invention can extend the input power range in which the Q factor of the time-base Schottky diode and the matching network exceeds 50% of conversion efficiency from -6.8 dBm to 12.1 dBm. In addition, the size of the rectifier can be reduced by using a finite no-load Q-factor rectifying element suitable for integration into medical implants.

Although the technical spirit of the present invention as described above has been described in detail according to the above embodiments, it should be noted that the above embodiments are for description and not limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical spirit of the present invention.

100: matching network 200: time axis schottky diode
300: load

Claims (15)

RF power supply, matching network, Schottky diode and load;
The Schottky diode is a rectifier comprising a spare current source connected in parallel between the anode terminal and the cathode terminal, a junction resistor and a junction capacitor.
2. The rectifier of claim 1, further comprising a series resistor coupled between the matching network and the Schottky diode.
The rectifier of claim 2 , wherein in the Schottky diode, as the input power increases, the current decreases and the saturated output DC voltage increases.
The rectifier according to claim 3, wherein the Schottky diode has a current of -3mA and a saturated output DC voltage of 3.7V at an input power of 12dBm.
RF power supply, matching network, Schottky diode and load;
The matching network includes a first inductor connected in series with the RF power source, and first and second capacitors connected in parallel with the RF power source.
6. The rectifier of claim 5, wherein the matching network further comprises a second inductor connected in parallel with the second capacitor.
RF power supply, matching network, Schottky diode and load;
the matching network comprises a series LC circuit comprising a first capacitor and a first inductor connected in series, and a parallel LC circuit comprising a second capacitor and a second inductor connected in parallel;
A rectifier in which the series LC circuit and the parallel LC circuit are connected in parallel.
The rectifier according to claim 6 or 7, wherein the matching network has a Q factor and a maximum transmission loss and a minimum return loss at a frequency of 433 MHz.
The rectifier according to claim 8, wherein the matching network has a Q factor of 10 to 12 at a frequency of 433 MHz, a transmission loss of -23 dB to -25 dB, and a return loss of 0 dB to -1 dB.
RF power supply, matching network, Schottky diode and load;
The Schottky diode includes a spare current source connected in parallel between an anode terminal and a cathode terminal, a junction resistor and a junction capacitor,
The matching network includes a first inductor connected in series with the RF power source, and first and second capacitors connected in parallel with the RF power source.
11. The rectifier of claim 10, further comprising a series resistor coupled between the matching network and the Schottky diode.
12. The rectifier of claim 11, wherein the matching network further comprises a second inductor connected in parallel with a second capacitor.
The rectifier according to claim 12, wherein the Schottky diode has a current of -3 mA and a saturated output DC voltage of 3.7V at an input power of 12dBm.
14. The rectifier of claim 13, wherein the input power ranges from -6.8 dBm to 12.1 dBm.
The rectifier according to claim 13, which is implemented on a TLC-32 substrate and has dimensions of 1.1 cm x 0.4 cm.

Images