KR20210151940A - R-t-b계 희토류 영구자석 재료, 제조방법 및 응용 - Google Patents
R-t-b계 희토류 영구자석 재료, 제조방법 및 응용 Download PDFInfo
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- 229910052761 rare earth metal Inorganic materials 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 150000002910 rare earth metals Chemical class 0.000 title description 3
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 22
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 28
- 229910052760 oxygen Inorganic materials 0.000 claims description 23
- 239000002994 raw material Substances 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 21
- 229910052733 gallium Inorganic materials 0.000 claims description 19
- 238000005245 sintering Methods 0.000 claims description 10
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- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
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- 239000000696 magnetic material Substances 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 description 32
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 26
- 229910052802 copper Inorganic materials 0.000 description 23
- 239000012535 impurity Substances 0.000 description 23
- 229910052719 titanium Inorganic materials 0.000 description 23
- 229910052796 boron Inorganic materials 0.000 description 20
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- 238000009792 diffusion process Methods 0.000 description 11
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
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- 238000010438 heat treatment Methods 0.000 description 8
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- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 3
- QJVKUMXDEUEQLH-UHFFFAOYSA-N [B].[Fe].[Nd] Chemical compound [B].[Fe].[Nd] QJVKUMXDEUEQLH-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 229910001172 neodymium magnet Inorganic materials 0.000 description 2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- 239000011162 core material Substances 0.000 description 1
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- 150000002431 hydrogen Chemical class 0.000 description 1
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- 239000006082 mold release agent Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
도2는 비교예2에서 제작된 영구자석 재료를 FE-EPMA로 표면 스캐닝하여 형성된 Nd, Cu, Ti, C의 분포도이다.
Claims (10)
- 질량 백분율로 다음의 성분을 포함하는 R-T-B계 영구자석 재료Ⅰ에 있어서,
R:29.0~32.5 wt%,또한 R중에 RH가 포함되고;
Cu:0.30~0.50 wt%;
Ti:0.05~0.20 wt%;
B:0.85~1.05 wt%;
C:0.1~0.3 wt%;
Fe:66~68 wt%,
wt%는 상기 R-T-B계 영구자석 재료Ⅰ중의 질량 백분율을 의미하며,
상기 R은 희토류 원소이며, 상기 R에 적어도 Nd가 포함되며;
상기 RH는 중희토류 원소이며, 상기 RH에 적어도 Tb 및/또는 Dy가 포함되는 것을 특징으로 하는 R-T-B계 영구자석 재료Ⅰ. - 제1항에 있어서, 상기 R-T-B계 영구자석 재료Ⅰ는 자성체의 입계에 Cu-Ti-C입계상이 존재하며;
및/또는,상기 R-T-B계 영구자석 재료Ⅰ는 0~0.15 wt% 단 0을 제외하는 O를 포함하고,wt%는 상기 R-T-B계 영구자석 재료Ⅰ중의 질량 백분율을 의미하며, 바람직하게는 상기 O의 함유량 범위는 0.04~0.12 wt%,예를 들면 0.05 wt%, 0.06 wt%, 0.08 wt%, 0.1 wt% 또는 0.12 wt%이며,wt%는 상기 R-T-B계 영구자석 재료Ⅰ중의 질량 백분율을 의미하며;
및/또는, 상기 R-T-B계 영구자석 재료Ⅰ는 0~3 wt%의 M를 더 포함하고, 상기 M의 종류는 Co, Al, Ga, Si, Sn, Ge, Ag, Au, Bi, Mn과 Cr중의 적어도 하나의 원소를 포함하며; 상기 M의 종류는 바람직하게는 Co 또는 Ga이며; 상기 M가 Co를 포함하는 경우, 상기 Co의 함유량 범위는 바람직하게는 0.5~1.5 wt%,예를 들면 0.6 wt%, 0.7 wt%, 1.0 wt% 또는 1.2 wt%이며, wt%는 상기 R-T-B계 영구자석 재료Ⅰ중의 질량 백분율을 의미하며, 상기 M가 Ga를 포함하는 경우, 상기 Ga의 함유량 범위는 바람직하게는 0.2~0.5 wt%,예를 들면 0.3 wt% 또는 0.4 wt%이며,wt%는 상기 R-T-B계 영구자석 재료Ⅰ중의 질량 백분율을 의미하는 것을 특징으로 하는 R-T-B계 영구자석 재료Ⅰ. - 제1항에 있어서, 상기 R중에 Pr원소를 더 포함하고;
및/또는,상기 R의 함유량 범위는 30~32.5 wt%,예를 들면 30.1 wt%, 30.6 wt%, 31.1 wt%, 31.6 wt% 또는 32.1 wt%이며, wt%는 상기 R-T-B계 영구자석 재료Ⅰ중의 질량 백분율을 의미하며;
및/또는,상기 RH의 함유량 범위는 0.5~1.2 wt%,예를 들면 0.6 wt% 또는 1.10 wt%, wt%는 상기 R-T-B계 영구자석 재료Ⅰ중의 질량 백분율을 의미하며;
및/또는,상기 Cu의 함유량 범위는 0.3~0.45 wt% 또는 0.5 wt%,예를 들면 0.3 wt%, 0.35 wt%, 0.4 wt% 또는 0.45 wt%이며, wt%는 상기 R-T-B계 영구자석 재료Ⅰ중의 질량 백분율을 의미하며;
및/또는,상기 Ti의 함유량 범위는 0.05~0.2 wt%,예를 들면 0.1 wt%, 0.15 wt% 또는 0.2 wt%이며, wt%는 상기 R-T-B계 영구자석 재료Ⅰ중의 질량 백분율을 의미하며;
및/또는,상기 B의 함유량 범위는 0.9~1.0 wt%,예를 들면 0.9 wt%, 0.92 wt%, 0.94 wt%, 0.96 wt%, 0.98 wt% 또는 1 wt%이며, wt%는 상기 R-T-B계 영구자석 재료Ⅰ중의 질량 백분율을 의미하며;
및/또는,상기 C의 함유량 범위는 0.1~0.2 wt%,예를 들면 0.12 wt%, 0.14 wt%, 0.16 wt% 또는 0.18 wt%이며, wt%는 상기 R-T-B계 영구자석 재료Ⅰ중의 질량 백분율을 의미하는 것을 특징으로 하는 R-T-B계 영구자석 재료Ⅰ. - 질량 백분율로 다음의 성분을 포함하는 R-T-B계 영구자석 재료Ⅱ에 있어서,
R:29.0~32 wt%,또한 R중에 RH가 포함되고,상기 RH의 함유량이 0~0.5 wt%이며;
Cu:0.30~0.50 wt%;
Ti:0.05~0.20 wt%;
C:0.1~0.3 wt%;
B:0.85~1.05 wt%;
Fe:66~68 wt%,wt%는 상기 R-T-B계 영구자석 재료Ⅱ중의 질량 백분율을 가리키며;
상기 R은 희토류 원소이며, 상기 R에 적어도 Nd가 포함되며;
상기 RH은 중희토류 원소이며,상기 RH에 적어도 Tb 또는 Dy가 포함되며;
바람직하게는 상기 R중에 Pr원소가 더 포함되는 것을 특징으로 하는 R-T-B계 영구자석 재료Ⅱ. - 제4항에 있어서, 상기 R의 함유량 범위는 29.5~31.5 wt%,예를 들면 29.5 wt%, 30 wt%, 30.5 wt%, 31 wt% 또는 31.5 wt%이며,wt%는 상기 R-T-B계 영구자석 재료Ⅱ중의 질량 백분율을 의미하며;
및/또는,상기 Cu의 함유량 범위는 0.3~0.45 wt% 또는 0.5 wt%,예를 들면 0.3 wt%, 0.35 wt%, 0.4 wt% 또는 0.45 wt%이며,wt%는 상기 R-T-B계 영구자석 재료Ⅱ중의 질량 백분율을 의미하며;
및/또는,상기 Ti의 함유량 범위는 0.05~0.2 wt%,예를 들면 0.1 wt%, 0.15 wt% 또는 0.2 wt%이며,wt%는 상기 R-T-B계 영구자석 재료Ⅱ중의 질량 백분율을 의미하며;
및/또는,상기 B의 함유량 범위는 0.9~1.0 wt%,예를 들면 0.9 wt%, 0.92 wt%, 0.94 wt%, 0.96 wt%, 0.98 wt% 또는 1 wt%이며,wt%는 상기 R-T-B계 영구자석 재료Ⅱ중의 질량 백분율을 의미하며;
및/또는,상기 C의 함유량 범위는 0.1~0.2 wt%,예를 들면 0.12 wt%, 0.14 wt%, 0.16 wt% 또는 0.18 wt%이며,wt%는 상기 R-T-B계 영구자석 재료Ⅱ중의 질량 백분율을 의미하며;
및/또는,상기 R-T-B계 영구자석 재료Ⅱ는 0~0.15 wt% 단 0을 제외하는O를 더 포함하며; 상기 O의 함유량 범위는 바람직하게는 0.04~0.12 wt%,예를 들면 0.05 wt%, 0.06 wt%, 0.08 wt%, 0.1 wt% 또는 0.12 wt%이며,wt%는 상기 R-T-B계 영구자석 재료Ⅱ중의 질량 백분율을 의미하며;
및/또는,상기 R-T-B계 영구자석 재료Ⅱ는0~3 wt%의 M를 더 포함하며,상기 M는 Co, Al, Ga, Si, Sn, Ge, Ag, Au, Bi, Mn과 Cr중의 적어도 하나의 원소를 포함하며; 상기 M가 Co를 포함하는 경우, 상기 Co의 함유량 범위는 바람직하게는 0.5~1.5 wt%,예를 들면 0.6 wt%, 0.7 wt%, 1.0 wt% 또는 1.2 wt%이며,wt%는 상기 R-T-B계 영구자석 재료Ⅱ중의 질량 백분율을 의미하며; 상기 M가 Ga를 포함하는 경우, 상기 Ga의 함유량 범위는 바람직하게는 0.2~0.5 wt%,예를 들면 0.3 wt% 또는 0.4 wt%이며,wt%는 상기 R-T-B계 영구자석 재료Ⅱ중의 질량 백분율을 의미하는 것을 특징으로 하는 R-T-B계 영구자석 재료Ⅱ. - 상기 R-T-B계 영구자석 재료Ⅱ의 원료조성물의 용융액을 주조, 파쇄, 분쇄, 성형, 소결을 거치게 하면 되는 절차를 포함하며,
상기 R-T-B계 영구자석 재료Ⅱ의 원료조성물은 질량 백분율로 다음의 성분을 포함하며, R:29.0~32 wt%,또한 R중에 RH가 포함되고,상기 RH의 함유량이 0~0.5 wt%이며; Cu:0.30~0.50 wt%; Ti:0.05~0.20 wt%; B:0.85~1.05 wt%; Fe:66~68 wt%; 상기 R은 희토류 원소이며, 상기 R에 적어도 Nd가 포함되며; 상기 RH은 중희토류 원소이며,상기 RH에 적어도 Tb 또는 Dy가 포함되며;
바람직하게는 상기 분쇄 공정이 산화 가스 함량100ppm이하의 분위기하에서 진행되는 것을 특징으로 하는 R-T-B계 영구자석 재료Ⅱ의 제조방법. - 제6항에 기재된 제조방법에 의해 제조하여 얻은 R-T-B계 영구자석 재료Ⅱ.
- 제4항, 제5항 및 제7항 중 어느 한 항에 기재된 R-T-B계 영구자석 재료Ⅱ에 대해 입계 확산 처리를 하면 되며,
상기 입계 확산 처리중의 중희토류 원소가 Tb 및/또는 Dy를 포함하는 것을 특징으로 하는 R-T-B계 영구자석 재료Ⅱ의 제조방법. - 제8항에 기재된 제조방법에 의해 제조하여 얻은 R-T-B계 영구자석 재료Ⅰ.
- R-T-B계 영구자석 재료의 전자부품으로서의 응용에 있어서, 상기 R-T-B계 영구자석 재료가 제1항 내지 제3항 및 제9항 중 어느 한 항에 기재된 R-T-B계 영구자석 재료Ⅰ이며;
및/또는,상기 R-T-B계 영구자석 재료가 제4항, 제5항 및 제7항 중 어느 한 항에 기재된 R-T-B계 영구자석 재료Ⅱ인 것을 특징으로 하는 응용.
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