KR20210125936A - Method for treating radiation-sensitive composition - Google Patents
Method for treating radiation-sensitive composition Download PDFInfo
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- KR20210125936A KR20210125936A KR1020210045766A KR20210045766A KR20210125936A KR 20210125936 A KR20210125936 A KR 20210125936A KR 1020210045766 A KR1020210045766 A KR 1020210045766A KR 20210045766 A KR20210045766 A KR 20210045766A KR 20210125936 A KR20210125936 A KR 20210125936A
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- South Korea
- Prior art keywords
- radiation
- sensitive composition
- compound
- sensitive
- meth
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
본 발명은, 감방사선성 조성물의 처리 방법으로서, 보다 상세하게는, 감방사선성 조성물의 투과율을 향상시키는 블리칭 처리 방법에 관한 것이다.The present invention relates to a method for treating a radiation-sensitive composition, and more particularly, to a bleaching treatment method for improving transmittance of a radiation-sensitive composition.
액정 패널이나 유기 EL 패널 등의 표시 장치에는, 각 화소에 대응하여 미세한 반도체 소자가 설치되어 있고, 당해 소자 내의 절연 재료(레지스트 재료)로서 광에 감응하는 성질(감방사선성)을 나타내는 조성물이 널리 이용되고 있다.A display device such as a liquid crystal panel or an organic EL panel is provided with a fine semiconductor element corresponding to each pixel, and as an insulating material (resist material) in the element, a composition exhibiting a property of being sensitive to light (radiation sensitivity) is widely used. is being used
예를 들면, 표시 장치의 제조 과정에 있어서, 감방사선성 조성물을 도포하여 프리베이크한 후, 노광 및 현상한 패턴에 자외선을 조사함으로써, 당해 패턴의 광 투과성이나 내구성(내열성)을 향상시키는 것이 알려져 있다. 이와 같이, 패터닝된 대상막에 대해서 자외선을 조사함으로써, 가시광에 대한 투과성을 향상시키는 처리를, 「블리칭 처리」라고 칭하는 경우가 있다. 이 처리는, 감방사선성 조성물에 포함되는 감광재를 자외선으로 분해함으로써 일으켜진다.For example, in the manufacturing process of a display device, it is known to improve the light transmittance and durability (heat resistance) of the said pattern by irradiating ultraviolet-ray to the exposed and developed pattern after apply|coating and prebaking a radiation-sensitive composition. have. Thus, the process of improving the transmittance|permeability with respect to visible light by irradiating an ultraviolet-ray with respect to the patterned target film|membrane is called "bleaching process" in some cases. This treatment is caused by decomposing the photosensitive material contained in the radiation-sensitive composition with ultraviolet rays.
예를 들면 하기 특허문헌 1에는, 레지스트 패턴에 i선, 즉 파장 365nm의 자외선을 조사하여 블리칭 처리를 행하는 것이 기재되어 있다.For example, in
블리칭 처리용 광원에는, 고압 수은 램프 등의 램프가 일반적으로 이용되고 있다. 상기 특허문헌 1에 있어서도 「i선」이라는 기재가 있기 때문에, 수은 스펙트럼이 상정되어 있는 바, 문언 상의 기재는 없지만 고압 수은 램프의 이용이 예정되어 있다고 이해된다.Lamps, such as a high-pressure mercury-vapor lamp, are generally used as the light source for bleaching processing. Since there is a description of "i-line" also in the said
이에 대해, 근년의 고체 광원의 기술 진보에 수반하여, UV-LED를 이용한 블리칭 처리의 검토가 진행되고 있다.On the other hand, with the technological progress of a solid-state light source in recent years, examination of the bleaching process using UV-LED is advancing.
그러나, 본 발명자들의 예의 연구에 의하면, 블리칭 처리에 LED 광원을 이용했을 경우, 원하는 투과율(블리칭능)을 얻을 수 없다는 문제나, 감방사선성 조성물의 내부에서 발포가 발생한다는 문제가 발생하기 쉬운 것을 알 수 있었다.However, according to the diligent research of the present inventors, when an LED light source is used for the bleaching process, the problem that the desired transmittance (bleaching ability) cannot be obtained and the problem that foaming occurs inside the radiation-sensitive composition tends to occur could see that
본 발명은, 상기의 과제를 감안하여, LED 광원을 이용하면서도, 감방사선성 조성물에 대한 높은 투과성을 부여하고, 나아가서는 기포의 발생을 억제할 수 있는, 감방사선성 조성물의 처리 방법을 제공하는 것을 목적으로 한다.In view of the above problems, the present invention provides a method for treating a radiation-sensitive composition that can provide high transmittance to the radiation-sensitive composition while using an LED light source, and further suppress the generation of air bubbles. aim to
본 발명은, 감방사선성 조성물의 처리 방법으로서, The present invention provides a method for treating a radiation-sensitive composition,
상기 감방사선성 조성물은,The radiation-sensitive composition,
산기를 갖는 라디칼 중합성 화합물 (a), 에폭시기를 갖는 라디칼 중합성 화합물 (b), 및 다른 라디칼 중합성 화합물 (c)의 공중합체인 알칼리 수용액에 가용인 수지 (A)와,A radically polymerizable compound (a) having an acid group, a radically polymerizable compound (b) having an epoxy group, and a resin (A) soluble in aqueous alkali solution which is a copolymer of another radically polymerizable compound (c);
감방사선성 산 생성 화합물 (B)를 갖고, having a radiation-sensitive acid-generating compound (B),
상기 감방사선성 조성물에 대해서, LED 소자로부터 주(主)피크 파장이 375nm 이상 395nm 이하의 범위 내에 있는 자외선을 조사하여, 상기 감방사선성 조성물의 투과율을 향상시키는 공정 (α)를 포함하는 것을 특징으로 한다.A step (α) of improving the transmittance of the radiation-sensitive composition by irradiating the radiation-sensitive composition with ultraviolet rays having a main peak wavelength in the range of 375 nm or more and 395 nm or less from the LED element; do it with
감방사선성 조성물을 포함하여 이루어지는 막에 대해서 블리칭 처리를 행하는 경우에는, 「해결하고자 하는 과제」의 항에서 상술한 바와 같이, 종래는 일반적으로 수은 램프가 이용되고 있었다. 이는, 감방사선성 산 생성 화합물이, 수은 램프로부터 출사되는 광의 피크 파장 중 하나인 365nm(i선)에 대해서 높은 감광성을 나타내는 것이 경험적으로 알려져 있었기 때문이다.When a bleaching treatment is performed on a film comprising a radiation-sensitive composition, as described above in the section of “Problems to be Solved”, a mercury lamp has conventionally been used. This is because it has been empirically known that a radiation-sensitive acid-generating compound exhibits high photosensitivity to 365 nm (i-ray), which is one of the peak wavelengths of light emitted from a mercury lamp.
본 발명자들은, 상기의 지견으로부터, 우선 주피크 파장이 365nm 근방을 나타내는 LED 소자를 준비하고, 이 LED 소자로부터 출사된 자외선을, 감방사선성 조성물을 포함하여 이루어지는 처리 대상막(이하, 적절히 「대상막」이라고 칭하는 경우가 있다.)에 대해서 조사하여 블리칭 처리를 행했다. 그러자, 이러한 처리를 행한 후의 대상막의 투과율은, 원하는 값보다 낮은 것이며, 만족하는 투과 성능이 실현되지 않는 것이 확인되었다.The present inventors, from the above findings, first prepare an LED element having a main peak wavelength of around 365 nm, and apply ultraviolet rays emitted from the LED element to a film to be treated (hereinafter, appropriately referred to as "target film") comprising a radiation-sensitive composition. film") and subjected to bleaching treatment. Then, it was confirmed that the transmittance|permeability of the target film|membrane after such a process was lower than a desired value, and satisfactory permeation|transmission performance was not implement|achieved.
또한, 상기에 있어서, 주피크 파장이 「365nm 근방」이라는 표현을 하고 있는 것은, 주피크 파장이 365nm인 LED 소자로서 입수된 것이어도, 소자 간에는 개체차가 존재하여, 주피크 파장에 ±10nm 정도의 제조 시의 오차가 발생하는 경우가 있기 때문이다.In addition, in the above, the expression "near 365 nm" with the main peak wavelength is an LED element having a main peak wavelength of 365 nm, even if it is obtained as an LED element, there is individual difference between the elements, and the main peak wavelength is approximately ±10 nm. This is because an error may occur during manufacturing.
또한, 처리 후의 대상막 내에는, 몇 개의 기포가 존재하는 것이 확인되었다. 감방사선성 조성물을 포함하여 이루어지는 대상막은, 상술한 바와 같이 액정 패널이나 유기 EL 패널 등에 있어서 절연막으로서 기능하기 때문에, 광취출(取出)면 측으로부터 기포가 시인(視認)되어 버리면, 장치의 표시 성능 등에 영향을 미치는 것이 생각된다.In addition, it was confirmed that some air bubbles were present in the target film after the treatment. Since the target film containing the radiation-sensitive composition functions as an insulating film in a liquid crystal panel or an organic EL panel as described above, when the air bubbles are visually recognized from the light extraction surface side, the display performance of the device It is thought to affect etc.
이에 대해, 본 발명자들은, i선(365nm)보다 장파장 측에 파장을 의도적으로 시프트시킨, 주피크 파장이 375nm 이상 395nm 이하의 광을 발하는 LED 소자를 준비하고, 이 LED 소자로부터의 자외선을, 상기 대상막에 조사하는 것을 시도했다. 그러자, 놀랍게도, 주피크 파장이 365nm 근방인 LED 소자로부터의 자외선을 조사했을 경우에 비해서, 투과율이 향상됨과 더불어 막 내에 발생하는 기포의 양을 큰폭으로 저하시킬 수 있는 것을 알 수 있었다. 이 사실은, 퀴논디아지드 화합물을 비롯한 감방사선성 산 생성 화합물이, 365nm에 대해서 높은 감광성을 나타낸다고 생각되고 있던 종래의 지견을 감안하면, 극히 놀라운 효과이다.In contrast, the present inventors prepared an LED element emitting light with a main peak wavelength of 375 nm or more and 395 nm or less, in which the wavelength is intentionally shifted to the longer wavelength side than the i-line (365 nm), and the ultraviolet rays from the LED element are An attempt was made to irradiate the target film. Then, surprisingly, it was found that the transmittance was improved and the amount of bubbles generated in the film could be significantly reduced compared to the case of irradiating the ultraviolet rays from the LED element having a main peak wavelength around 365 nm. This fact is an extremely surprising effect in view of the prior knowledge that radiation-sensitive acid-generating compounds including quinonediazide compounds exhibit high photosensitivity at 365 nm.
본 명세서에 있어서 「주피크 파장」이란, 스펙트럼 상에 있어서 광 강도가 가장 높은 파장을 가리킨다.In this specification, the "main peak wavelength" refers to the wavelength with the highest light intensity on the spectrum.
상기 자외선은, 반치폭이 20nm 이하인 것으로 해도 무방하다.The ultraviolet rays may have a half width of 20 nm or less.
반치폭이 20nm인 스펙트럼을 나타내는 자외선을 발하는 LED 소자를 이용함으로써, 자외선에 포함되는 365nm 성분의 광 강도를, 주피크 파장의 광 강도에 대해서 충분히 낮게 할 수 있다. 이에 의해, 투과율의 향상과 기포의 발생의 억제를 양립할 수 있다.By using the LED element emitting ultraviolet rays exhibiting a spectrum having a half maximum width of 20 nm, the light intensity of the 365 nm component contained in the ultraviolet rays can be sufficiently made low with respect to the light intensity of the main peak wavelength. Thereby, the improvement of a transmittance|permeability and suppression of generation|occurrence|production of a bubble are compatible.
상기 자외선은, 파장 365nm에 있어서의 광 강도가, 상기 주피크 파장의 광 강도에 대해서 10% 미만인 것으로 해도 무방하다.The ultraviolet light may have a light intensity at a wavelength of 365 nm that is less than 10% of the light intensity at the main peak wavelength.
상기 공정 (α)는, 상기 LED 소자로부터 파장 365nm 이하의 광을 커트하는 필터를 통해 상기 자외선을 상기 감방사선성 조성물에 조사하는 공정인 것으로 해도 무방하다.The step (α) may be a step of irradiating the radiation-sensitive composition with the ultraviolet rays through a filter that cuts light with a wavelength of 365 nm or less from the LED element.
상기 감방사선성 산 생성 화합물 (B)는, 1,2-퀴논디아지드 화합물인 것으로 해도 무방하다.The radiation-sensitive acid generating compound (B) may be a 1,2-quinonediazide compound.
상기 감방사선성 조성물에서 차지하는, 상기 감방사선성 산 생성 화합물 (B)의 비율은, 상기 수지 (A) 100질량부에 대해서 15~30질량부인 것으로 해도 무방하다.The proportion of the radiation-sensitive acid-generating compound (B) in the radiation-sensitive composition may be 15 to 30 parts by mass with respect to 100 parts by mass of the resin (A).
상기 다른 라디칼 중합성 화합물 (c)가, 지환식 구조를 갖는 (메타)아크릴산 에스테르, 방향환 구조를 갖는 (메타)아크릴산 에스테르, 방향족 비닐 화합물, N-치환 말레이미드 화합물, 및 복소환 구조를 갖는 비닐 화합물로 이루어지는 군에서 선택되는 적어도 1종의 단량체에서 유래하는 구조 단위인 것으로 해도 무방하다.The other radically polymerizable compound (c) is a (meth)acrylic acid ester having an alicyclic structure, a (meth)acrylic acid ester having an aromatic ring structure, an aromatic vinyl compound, an N-substituted maleimide compound, and a heterocyclic structure. It is good also as a structural unit derived from at least 1 sort(s) of monomer chosen from the group which consists of vinyl compounds.
수지를 구성하는 화합물에, 지환식 구조를 갖는 (메타)아크릴산 에스테르, 방향환 구조를 갖는 (메타)아크릴산 에스테르, 방향족 비닐 화합물, N-치환 말레이미드 화합물, 또는 복소환 구조를 갖는 비닐 화합물 등의 환상 구조가 포함됨으로써, 자외선 조사 시에 발포를 억제하는 작용을 높일 수 있다.In the compound constituting the resin, (meth)acrylic acid ester having an alicyclic structure, (meth)acrylic acid ester having an aromatic ring structure, an aromatic vinyl compound, an N-substituted maleimide compound, or a vinyl compound having a heterocyclic structure, etc. By including a cyclic structure, the effect|action which suppresses foaming at the time of ultraviolet irradiation can be heightened.
상기 수지 (A)는, 가교성 기를 포함하는 구조 단위를 포함하는 것으로 해도 무방하다. 이러한 구성에 의하면, 자외선 조사 시에 발포를 억제하는 작용을 더 높일 수 있다.The said resin (A) is good also as a thing containing the structural unit containing a crosslinkable group. According to such a structure, the effect|action which suppresses foaming at the time of ultraviolet irradiation can further be heightened.
또, 상기 감방사선성 조성물의 처리 방법은,In addition, the treatment method of the radiation-sensitive composition,
하지(下地)막을 성막하는 공정 (β1)과,A step (β1) of forming an underlying film;
상기 공정 (β1)에 의해서 성막된 상기 하지막의 상층에, 상기 감방사선성 조성물을 도포하는 공정 (β2)와,a step (β2) of applying the radiation-sensitive composition to the upper layer of the base film formed by the step (β1);
상기 공정 (β2) 후, 상기 감방사선성 조성물에 대해서, 프리베이크, 노광, 및 현상의 각 처리를 순차적으로 실행하는 공정 (β3)을 갖고, After the step (β2), a step (β3) of sequentially performing each treatment of prebaking, exposure, and development on the radiation-sensitive composition;
상기 공정 (α)는, 상기 공정 (β3) 후에 실행되는 것으로 해도 무방하다.The step (α) may be performed after the step (β3).
상기 방법에 의하면, 예를 들면 표시 장치 등에 형성되는, 패터닝된 절연막에 대한 투과율을 향상시킬 수 있다.According to the above method, it is possible to improve transmittance with respect to a patterned insulating film formed in, for example, a display device.
본 발명의 방법에 의하면, LED 광원을 이용하면서도, 감방사선성 조성물을 포함하여 이루어지는 대상막에 대한 높은 투과성을 부여하면서 막 내에서의 기포의 발생이 억제된다.According to the method of this invention, generation|occurrence|production of the bubble in a film|membrane is suppressed while providing high transmittance|permeability with respect to the target film|membrane which consists of a radiation-sensitive composition while using an LED light source.
도 1은, 본 발명에 따른 감방사선성 조성물의 처리 방법의 일 공정을 모식적으로 나타낸 도면이다.
도 2는, LED 소자로부터 출사되는 자외선의 스펙트럼의 일례를 나타낸 도면이다.
도 3은, 주피크 파장이 365nm, 385nm, 405nm인 자외선의 스펙트럼을 겹친 도면이다.
도 4는, 본 발명에 따른 감방사선성 조성물의 처리 방법의 일 공정을 모식적으로 나타낸 다른 도면이다.1 is a view schematically showing one step of a method for treating a radiation-sensitive composition according to the present invention.
Fig. 2 is a diagram showing an example of the spectrum of ultraviolet rays emitted from the LED element.
Fig. 3 is a diagram in which the spectrum of ultraviolet rays having main peak wavelengths of 365 nm, 385 nm and 405 nm is superimposed.
4 is another view schematically showing one step of the method for treating the radiation-sensitive composition according to the present invention.
도 1은, 본 발명에 따른 감방사선성 조성물의 처리 방법의 일 공정을 모식적으로 나타내는 도면이다. 단, 도 1은, 어디까지나 모식적으로 도시된 것이며, 실제의 치수비와 도면 상의 치수비와는 반드시 일치하지 않는다.BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows typically one process of the processing method of the radiation-sensitive composition which concerns on this invention. However, FIG. 1 is schematically illustrated to the last, and the actual dimensional ratio and the dimensional ratio on the drawing do not necessarily coincide.
처리 대상이 되는 막(이하, 「대상막(1)」로 칭한다.)은, 층(2)의 상층에 적층되어 있고, 패터닝 처리가 실시되어 있다. 대상막(1)은 감방사선성을 나타내는 재료(감방사선성 조성물)를 포함하여 이루어진다. 재료의 상세한 설명은 후술된다. 또한, 층(2)은 「하지막」에 대응한다.The film to be processed (hereinafter, referred to as "
대상막(1)에 대해서, LED 소자(4)를 탑재한 광원(3)으로부터, 주피크 파장이 375nm 이상 395nm 이하인 자외선(L1)을 조사한다(공정 (α)에 대응.). 도 2는, 자외선(L1)의 스펙트럼의 일례를 나타낸다. 도 2에 나타내는 스펙트럼은, LED 소자(4)가 주피크 파장이 385nm인 자외선(L1)을 발하는 소자인 경우에 대응한다. 도 2에 나타내는 스펙트럼에서는, 반치폭(dλ)이 13nm이다. 또한, 반치폭(dλ)은 20nm 이하인 것이 바람직하다.The
이러한 LED 소자(4)는, 예를 들면, InGaN 또는 AlInGaN으로 이루어지는 우물층과, GaN 또는 우물층보다 In 조성비가 낮은 InGaN 혹은 AlInGaN으로 이루어지는 장벽층을 가진 활성층을 포함하여 실현된다.The
대상막(1)에 대해서 주피크 파장이 375nm 이상 395nm 이하인 자외선(L1)이 조사됨으로써, 대상막(1)의 투과율이 향상됨과 더불어, 대상막(1) 내에서의 기포의 발생이 억제된다. 이 점에 대해서는, 실시예를 참조하여 후술된다.By irradiating the
다음에, 대상막(1)의 재료에 대해 설명한다.Next, the material of the
대상막(1)은, 감방사선성 조성물을 포함한다. 이 감방사선성 조성물은, 수지 (A) 및 감방사선성 산 생성 화합물 (B)를 함유하고, 필요에 따라서 그 외의 배합제 (C)를 함유한다.The
《수지 (A)》《Resin (A)》
수지 (A)는, 알칼리 가용성 기를 갖고, 바람직하게는 가열에 의해서 경화하는 성질을 나타내는 재료로 이루어진다. 이러한 수지 (A)는, 산기를 갖는 라디칼 중합성 화합물 (a), 및 에폭시기를 갖는 라디칼 중합성 화합물 (b)를, 다른 라디칼 중합성 화합물 (c)와 더불어 용매 중에서 라디칼 공중합함으로써 얻어진다.Resin (A) has an alkali-soluble group, Preferably it consists of a material which shows the property of hardening by heating. Such resin (A) is obtained by radical copolymerizing the radically polymerizable compound (a) which has an acidic radical, and the radically polymerizable compound (b) which has an epoxy group together with another radically polymerizable compound (c) in a solvent.
산기를 갖는 라디칼 중합성 화합물 (a)의 구체적인 예로서는, As a specific example of the radically polymerizable compound (a) which has an acidic radical,
카르복시기를 갖는 구조 단위를 구성하는 단량체로서, 예를 들면 (메타)아크릴산 크로톤산, 4-비닐안식향산 등의 불포화 모노카르본산을; 말레산, 푸마르산, 시트라콘산, 메사콘산, 이타콘산 등의 불포화 디카르본산을;As a monomer which comprises the structural unit which has a carboxy group, For example, unsaturated monocarboxylic acids, such as (meth)acrylic acid crotonic acid and 4-vinyl benzoic acid; unsaturated dicarboxylic acids such as maleic acid, fumaric acid, citraconic acid, mesaconic acid, and itaconic acid;
설폰산기를 갖는 구조 단위를 구성하는 단량체로서, 예를 들면 비닐설폰산, (메타)알릴설폰산, 스티렌설폰산, (메타)아크릴로일옥시에틸설폰산 등을;Examples of the monomer constituting the structural unit having a sulfonic acid group include vinylsulfonic acid, (meth)allylsulfonic acid, styrenesulfonic acid, (meth)acryloyloxyethylsulfonic acid and the like;
페놀성 수산기를 갖는 구조 단위를 구성하는 단량체로서, 예를 들면 4-히드록시스티렌, o-이소프로페닐페놀, m-이소프로페닐페놀, p-이소프로페닐페놀, 히드록시페닐(메타)아크릴레이트 등을, 각각 들 수 있다. 또, 단량체로서 말레이미드를 이용할 수 있다.As a monomer constituting the structural unit having a phenolic hydroxyl group, for example, 4-hydroxystyrene, o-isopropenylphenol, m-isopropenylphenol, p-isopropenylphenol, hydroxyphenyl (meth)acryl rate etc. are mentioned, respectively. Moreover, maleimide can be used as a monomer.
에폭시기를 갖는 라디칼 중합성 화합물 (b)로서는, 글리시딜(메타)아크릴레이트, 3,4-에폭시시클로헥실(메타)아크릴레이트, 3,4-에폭시시클로헥실메틸(메타)아크릴레이트, 2-(3,4-에폭시시클로헥실)에틸(메타)아크릴레이트, 3,4-에폭시트리시클로[5.2.1.02,6]데실(메타)아크릴레이트, (3-메틸옥세탄-3-일)메틸(메타)아크릴레이트, (3-에틸옥세탄-3-일)(메타)아크릴레이트, (옥세탄-3-일)메틸(메타)아크릴레이트, (3-에틸옥세탄-3-일)메틸(메타)아크릴레이트 등을 들 수 있다. 또한, 본 명세서에서는, 옥시라닐기 및 옥세타닐기를 포함하여 「에폭시기」라고도 한다.Examples of the radically polymerizable compound (b) having an epoxy group include glycidyl (meth)acrylate, 3,4-epoxycyclohexyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acrylate, 2- (3,4-epoxycyclohexyl)ethyl (meth)acrylate, 3,4-epoxytricyclo[5.2.1.0 2,6 ]decyl (meth)acrylate, (3-methyloxetan-3-yl)methyl (meth)acrylate, (3-ethyloxetan-3-yl) (meth)acrylate, (oxetan-3-yl)methyl (meth)acrylate, (3-ethyloxetan-3-yl)methyl (meth)acrylate etc. are mentioned. In addition, in this specification, it is also called "epoxy group" including oxiranyl group and oxetanyl group.
상기 수지 (A)(이하, 「공중합체 (I)」로 나타낸다.)를 얻을 때에, 상술한 산기를 갖는 라디칼 중합성 화합물 (a)와, 에폭시기를 갖는 라디칼 중합성 화합물 (b)의 2성분계에서의 라디칼 중합에서는, 중합 반응 중에 에폭시기와 산기를 갖는 라디칼 중합성 화합물이 반응을 일으켜, 가교가 일어나 중합계가 겔화해 버리는 경우가 있다.When obtaining the resin (A) (hereinafter, referred to as "copolymer (I)"), a binary system of the radically polymerizable compound (a) having an acid group and (b) having an epoxy group In the radical polymerization in , a radically polymerizable compound having an epoxy group and an acid group reacts during a polymerization reaction, crosslinking may occur, and the polymerization system may be gelled.
그래서 공중합체 (I)를 얻기 위해서는, 제3 성분으로서 다른 라디칼 중합성 화합물 (c)를 이용하여, 에폭시기와 산기를 갖는 라디칼 중합성 화합물과의 반응을 억제하는 것이 적절하다. 이러한 다른 라디칼 중합성 화합물 (c)로서는, (메타)아크릴산 알킬 에스테르, (메타)아크릴산 시클로알킬 에스테르, (메타)아크릴산 방향족 에스테르, 방향족 비닐 화합물, N-치환 말레이미드 화합물, 복소환 함유 비닐 화합물, 공역 디엔 화합물, 질소 함유 비닐 화합물, 불포화 디카르본산 디알킬 에스테르 화합물 등을 들 수 있다.Then, in order to obtain a copolymer (I), it is appropriate to use another radically polymerizable compound (c) as a 3rd component, and to suppress reaction with the radically polymerizable compound which has an epoxy group and an acidic radical. As such other radically polymerizable compound (c), (meth)acrylic acid alkyl ester, (meth)acrylic acid cycloalkyl ester, (meth)acrylic acid aromatic ester, aromatic vinyl compound, N-substituted maleimide compound, heterocyclic-containing vinyl compound, A conjugated diene compound, a nitrogen-containing vinyl compound, an unsaturated dicarboxylic acid dialkyl ester compound, etc. are mentioned.
다른 라디칼 중합성 화합물 (c)의 구체적인 예로서는,As a specific example of another radically polymerizable compound (c),
(메타)아크릴산 알킬 에스테르로서, (메타)아크릴산 메틸, (메타)아크릴산 에틸, (메타)아크릴산 n-프로필, (메타)아크릴산 이소프로필, (메타)아크릴산 부틸, (메타)아크릴산 2-에틸헥실, (메타)아크릴산 n-라우릴, (메타)아크릴산 n-스테아릴 등을;As (meth)acrylic acid alkyl ester, (meth)acrylate methyl, (meth)acrylate, (meth)acrylic acid n-propyl, (meth)acrylic acid isopropyl, (meth)acrylate butyl, (meth)acrylic acid 2-ethylhexyl, (meth)acrylic acid n-lauryl, (meth)acrylic acid n-stearyl and the like;
지환식 구조를 갖는 (메타)아크릴산 에스테르로서, (메타)아크릴산 시클로헥실, (메타)아크릴산 2-메틸시클로헥실, (메타)아크릴산 디시클로펜타닐, (메타)아크릴산 트리시클로[5.2.1.02,5]데칸-8-일옥시에틸, (메타)아크릴산 이소보로닐 등을;As (meth)acrylic acid ester having an alicyclic structure, (meth)acrylic acid cyclohexyl, (meth)acrylic acid 2-methylcyclohexyl, (meth)acrylic acid dicyclopentanyl, (meth)acrylic acid tricyclo[5.2.1.0 2,5 ]Decan-8-yloxyethyl, (meth)acrylic acid isoboronyl, etc.;
방향환 구조를 갖는 (메타)아크릴산 에스테르로서, (메타)아크릴산 페닐, (메타)아크릴산 벤질 등을;As (meth)acrylic acid ester which has an aromatic ring structure, (meth)acrylic acid phenyl, (meth)acrylic acid benzyl, etc.;
방향족 비닐 화합물로서, 스티렌, 2-메틸스티렌, 3-메틸스티렌, 4-메틸스티렌, α-메틸스티렌, 2,4-디메틸스티렌, 2,4-디이소프로필스티렌, 5-t-부틸-2-메틸스티렌, 디비닐벤젠, 트리비닐벤젠, t-부톡시스티렌, 비닐벤질디메틸아민, (4-비닐벤질)디메틸아미노에틸에테르, N,N-디메틸아미노에틸스티렌, N,N-디메틸아미노메틸스티렌, 2-에틸스티렌, 3-에틸스티렌, 4-에틸스티렌, 2-t-부틸스티렌, 3-t-부틸스티렌, 4-t-부틸스티렌, 디페닐에틸렌, 비닐나프탈렌, 비닐피리딘 등을;As the aromatic vinyl compound, styrene, 2-methylstyrene, 3-methylstyrene, 4-methylstyrene, α-methylstyrene, 2,4-dimethylstyrene, 2,4-diisopropylstyrene, 5-t-butyl-2 -Methylstyrene, divinylbenzene, trivinylbenzene, t-butoxystyrene, vinylbenzyldimethylamine, (4-vinylbenzyl)dimethylaminoethyl ether, N,N-dimethylaminoethylstyrene, N,N-dimethylaminomethyl styrene, 2-ethylstyrene, 3-ethylstyrene, 4-ethylstyrene, 2-t-butylstyrene, 3-t-butylstyrene, 4-t-butylstyrene, diphenylethylene, vinylnaphthalene, vinylpyridine, etc.;
N-치환 말레이미드 화합물로서, N-시클로헥실말레이미드, N-시클로펜틸말레이미드, N-(2-메틸시클로헥실)말레이미드, N-(4-메틸시클로헥실)말레이미드, N-(4-에틸시클로헥실)말레이미드, N-(2,6-디메틸시클로헥실)말레이미드, N-노르보르닐말레이미드, N-트리시클로데실말레이미드, N-아다만틸말레이미드, N-페닐말레이미드, N-(2-메틸페닐)말레이미드, N-(4-메틸페닐)말레이미드, N-(4-에틸페닐)말레이미드, N-(2,6-디메틸페닐)말레이미드, N-벤질말레이미드, N-나프틸말레이미드 등을;As the N-substituted maleimide compound, N-cyclohexylmaleimide, N-cyclopentylmaleimide, N-(2-methylcyclohexyl)maleimide, N-(4-methylcyclohexyl)maleimide, N-(4 -Ethylcyclohexyl)maleimide, N-(2,6-dimethylcyclohexyl)maleimide, N-norbornylmaleimide, N-tricyclodecylmaleimide, N-adamantylmaleimide, N-phenylmaleimide Mid, N-(2-methylphenyl)maleimide, N-(4-methylphenyl)maleimide, N-(4-ethylphenyl)maleimide, N-(2,6-dimethylphenyl)maleimide, N-benzylmaleimide mide, N-naphthyl maleimide, and the like;
복소환 구조를 갖는 비닐 화합물로서, (메타)아크릴산 테트라히드로푸르푸릴, (메타)아크릴산 테트라히드로피라닐, (메타)아크릴산 5-에틸-1,3-디옥산-5-일메틸, (메타)아크릴산 5-메틸-1,3-디옥산-5-일메틸, (메타)아크릴산 (2-메틸-2-에틸-1,3-디옥솔란-4-일)메틸, 2-(메타)아크릴로일옥시메틸-1,4,6-트리옥사스피로[4,6]운데칸, (메타)아크릴산 (γ-부티로락톤-2-일), (메타)아크릴산 글리세린 카보네이트, (메타)아크릴산 (γ-락탐-2-일), N-(메타)아크릴로일옥시에틸헥사히드로프탈이미드 등을;As a vinyl compound having a heterocyclic structure, (meth)acrylic acid tetrahydrofurfuryl, (meth)acrylic acid tetrahydropyranyl, (meth)acrylic acid 5-ethyl-1,3-dioxan-5-ylmethyl, (meth) 5-methyl-1,3-dioxan-5-ylmethyl acrylate, (meth)acrylic acid (2-methyl-2-ethyl-1,3-dioxolan-4-yl)methyl, 2-(meth)acrylo yloxymethyl-1,4,6-trioxaspiro [4,6] undecane, (meth)acrylic acid (γ-butyrolacton-2-yl), (meth)acrylic acid glycerin carbonate, (meth)acrylic acid (γ -lactam-2-yl), N-(meth)acryloyloxyethylhexahydrophthalimide, etc.;
공역 디엔 화합물로서, 1,3-부타디엔, 이소프렌 등을;As the conjugated diene compound, 1,3-butadiene, isoprene, etc.;
질소 함유 비닐 화합물로서, (메타)아크릴로니트릴, (메타)아크릴아미드 등을;As a nitrogen-containing vinyl compound, (meth)acrylonitrile, (meth)acrylamide, etc.;
불포화 디카르본산 디알킬 에스테르 화합물로서, 이타콘산 디에틸 등을, 각각 들 수 있다. 또, 그 외의 단량체로서는, 상기 외에, 예를 들면, 염화비닐, 염화비닐리덴, 아세트산 비닐 등의 단량체를 들 수 있다.Examples of the unsaturated dicarboxylic acid dialkyl ester compound include diethyl itaconic acid and the like. Moreover, as another monomer, in addition to the above, monomers, such as vinyl chloride, vinylidene chloride, and vinyl acetate, are mentioned, for example.
다른 라디칼 중합성 화합물 (c)는, 중합체 성분의 유리 전이 온도를 조정하여 열경화 시의 멜트 플로우를 억제하는 관점에서, 이들 중, (메타)아크릴산 알킬 에스테르, 지환식 구조를 갖는 (메타)아크릴산 에스테르, 방향환 구조를 갖는 (메타)아크릴산 에스테르, 방향족 비닐 화합물, N-치환 말레이미드 화합물, 및 복소환 구조를 갖는 비닐 화합물로 이루어지는 군에서 선택되는 적어도 1종의 단량체에서 유래하는 구조 단위인 것이 바람직하다.Another radically polymerizable compound (c) is from the viewpoint of controlling the glass transition temperature of the polymer component and suppressing the melt flow at the time of thermosetting, among them, (meth)acrylic acid alkyl ester, (meth)acrylic acid having an alicyclic structure It is a structural unit derived from at least one monomer selected from the group consisting of esters, (meth)acrylic acid esters having an aromatic ring structure, aromatic vinyl compounds, N-substituted maleimide compounds, and vinyl compounds having a heterocyclic structure. desirable.
또, 공중합체 (I)의, 산기를 갖는 라디칼 중합성 화합물 (a)의 공중합 비율은, 바람직하게는 5~40질량%, 특히 바람직하게는 10~30질량%이다. 5질량% 미만이면, 얻어지는 공중합체가 알칼리 수용액에 용해되기 어려워지므로 미현상부를 발생시키기 쉬워 충분한 패턴을 만들기 어렵다. 반대로 40질량%를 초과하면, 얻어지는 공중합체의 알칼리 수용액에 대한 용해성이 너무 커져서 방사선 조사부의 용해, 즉 막 감소 현상을 막는 것이 어려워진다.Moreover, the copolymerization ratio of the radically polymerizable compound (a) which has an acidic radical of copolymer (I) becomes like this. Preferably it is 5-40 mass %, Especially preferably, it is 10-30 mass %. When it is less than 5 mass %, since the copolymer obtained becomes difficult to melt|dissolve in aqueous alkali solution, it is easy to generate|occur|produce an undeveloped part, and it is difficult to make sufficient pattern. Conversely, when it exceeds 40 mass %, the solubility of the obtained copolymer in aqueous alkali solution becomes too large, and it becomes difficult to prevent the dissolution of a radiation-irradiated part, ie, film|membrane decrease phenomenon.
공중합체 (I)의, 에폭시기를 갖는 라디칼 중합성 화합물 (b)의 공중합 비율은, 바람직하게는 10~70질량%, 특히 바람직하게는 20~50질량%이다. 10질량% 미만이면, 산기를 갖는 라디칼 중합성 화합물 (a) 또는 감방사선성 산 생성 화합물 (B)에 방사선을 조사함으로써 생성되는 산과의 반응이 충분히 진행되기 어렵고, 조성물로부터 얻어지는 패턴의 내열성이 충분한 것이 되기 어려워진다. 또, 70질량%를 초과하면, 공중합체 (I)의 보존 안정성에 문제가 발생하기 쉬워진다.The copolymerization ratio of the radically polymerizable compound (b) having an epoxy group in the copolymer (I) is preferably 10 to 70 mass%, particularly preferably 20 to 50 mass%. When it is less than 10% by mass, the reaction with the acid generated by irradiating the radically polymerizable compound (a) or the radiation-sensitive acid-generating compound (B) having an acid group with radiation hardly proceeds sufficiently, and the heat resistance of the pattern obtained from the composition is sufficient. It becomes difficult to become Moreover, when it exceeds 70 mass %, it will become easy to generate|occur|produce a problem in the storage stability of copolymer (I).
공중합체 (I)의, 다른 라디칼 중합성 화합물 (c)의 공중합 비율은, 바람직하게는 10~70질량%, 특히 바람직하게는 30~50질량%이다. 10질량% 미만이면, 중합 반응 중에 겔화가 일어나기 쉬워진다. 또 70질량%를 초과하면, 에폭시기를 갖는 라디칼 중합성 화합물 (b)나, 산기를 갖는 라디칼 중합성 화합물 (a)의 양이 상대적으로 적어지기 때문에, 알칼리 수용액에 대한 수지의 용해도가 줄거나, 조성물로부터 얻어지는 패턴의 내열성이 불충분하게 되는 경우가 있다.The copolymerization ratio of another radically polymerizable compound (c) of a copolymer (I) becomes like this. Preferably it is 10-70 mass %, Especially preferably, it is 30-50 mass %. If it is less than 10 mass %, gelation will become easy to occur during a polymerization reaction. Moreover, when it exceeds 70 mass %, since the quantity of the radically polymerizable compound (b) which has an epoxy group and the radically polymerizable compound (a) which has an acidic group becomes relatively small, the solubility of the resin with respect to aqueous alkali solution decreases, The heat resistance of the pattern obtained from the composition may become insufficient.
공중합체 (I)를 중합할 때에 이용되는 용매로서는, 예를 들면 메탄올, 에탄올 등의 알코올류; 테트라히드로푸란 등의 에테르류; 에틸렌글리콜모노메틸에테르 등의 글리콜에테르류; 메틸셀로솔브아세테이트 등의 셀로솔브에스테르류; 프로필렌글리콜메틸에테르아세테이트, 프로필렌글리콜프로필에테르아세테이트 등의 프로필렌글리콜알킬에테르아세테이트류; 그 외에 방향족 탄화수소류, 케톤류, 에스테르류 등을 들 수 있다.As a solvent used when superposing|polymerizing copolymer (I), For example, Alcohol, such as methanol and ethanol; ethers such as tetrahydrofuran; glycol ethers such as ethylene glycol monomethyl ether; cellosolve esters such as methyl cellosolve acetate; propylene glycol alkyl ether acetates such as propylene glycol methyl ether acetate and propylene glycol propyl ether acetate; In addition, aromatic hydrocarbons, ketones, esters, etc. are mentioned.
라디칼 중합에 있어서의 중합 촉매로서는 통상의 라디칼 중합 개시제를 사용할 수 있으며, 예를 들면 2,2'-아조비스이소부티로니트릴, 2,2'-아조비스-(2,4-디메틸발레로니트릴), 2,2'-아조비스-(4-메톡시-2,4-디메틸발레로니트릴) 등의 아조 화합물; 벤조일페록사이드, 라우로일페록사이드, t-부틸페록시피발레이트, 1,1-비스-(t-부틸페록시)시클로헥산 등의 유기 과산화물 및 과산화수소 등을 들 수 있다. 과산화물을 라디칼 중합 개시제로 사용하는 경우, 환원제를 조합하여 레독스형의 개시제로 해도 된다.As a polymerization catalyst in radical polymerization, a normal radical polymerization initiator can be used, For example, 2,2'- azobisisobutyronitrile, 2,2'- azobis- (2, 4- dimethylvaleronitrile) ), azo compounds such as 2,2'-azobis-(4-methoxy-2,4-dimethylvaleronitrile); and organic peroxides such as benzoyl peroxide, lauroyl peroxide, t-butylperoxypivalate and 1,1-bis-(t-butylperoxy)cyclohexane, and hydrogen peroxide. When using a peroxide as a radical polymerization initiator, it is good also as a redox type initiator by combining a reducing agent.
이상의 공중합체 (I)의 분자량 및 그 분포는, 대상막(1)을 형성하는 감방사선성 조성물의 용액을 균일하게 도포하는 것이 가능한 한, 특별히 한정되는 것은 아니다.The molecular weight of the above copolymer (I) and its distribution are not particularly limited as long as the solution of the radiation-sensitive composition forming the
《감방사선성 산 생성 화합물 (B)》《Radiation sensitive acid generating compound (B)》
감방사선성 산 생성 화합물 (B)는, 광이 조사됨으로써 산을 생성하는 화합물이다. 일례로서, 감방사선성 산 생성 화합물은 퀴논디아지드 화합물 (B1)이다. 퀴논디아지드 화합물 (B1)은, 페놀성 수산기를 1개 이상 갖는 화합물과, 1,2-나프토퀴논디아지드-4-설폰산 또는 1,2-나프토퀴논디아지드-5-설폰산과의 에스테르 화합물이다.The radiation-sensitive acid-generating compound (B) is a compound that generates an acid when irradiated with light. As an example, the radiation-sensitive acid generating compound is a quinonediazide compound (B1). The quinonediazide compound (B1) is composed of a compound having one or more phenolic hydroxyl groups and 1,2-naphthoquinonediazide-4-sulfonic acid or 1,2-naphthoquinonediazide-5-sulfonic acid. It is an ester compound.
보다 상세하게는, 퀴논디아지드 화합물 (B1)은, 1,2-벤조퀴논디아지드설폰산 에스테르, 1,2-나프토퀴논디아지드설폰산 에스테르, 1,2-벤조퀴논디아지드설폰산아미드, 1,2-나프토퀴논디아지드설폰산아미드 등의 1,2-퀴논디아지드 화합물을 들 수 있다.More specifically, the quinonediazide compound (B1) is 1,2-benzoquinonediazidesulfonic acid ester, 1,2-naphthoquinonediazidesulfonic acid ester, 1,2-benzoquinonediazidesulfonic acid amide and 1,2-quinonediazide compounds such as 1,2-naphthoquinonediazidesulfonic acid amide.
이들 중에서, 퀴논디아지드 화합물 (B1)은, 방사선을 조사한 후의 400~800nm의 가시광선 영역에 있어서의 투명성이 양호한 화합물, 예를 들면 2,3,4-트리히드록시벤조페논, 2,3,4,4'-테트라히드록시벤조페논, 3'-메톡시-2,3,4,4'-테트라히드록시벤조페논, 2,2',5,5'-테트라메틸-2',4,4'-트리히드록시트리페닐메탄, 4,4'-[1-[4-[1-(4-히드록시페닐)-1-메틸에틸]페닐]에틸리덴]비스페놀 및 2,4,4-트리메틸-2',4',7-트리히드록시-2-페닐플라반 등의 1,2-벤조퀴논디아지드-4-설폰산 에스테르, 1,2-나프토퀴논디아지드-4-설폰산 에스테르 또는 1,2-나프토퀴논디아지드-5-설폰산 에스테르를 바람직한 것으로서 들 수 있다.Among these, the quinonediazide compound (B1) is a compound having good transparency in the visible region of 400 to 800 nm after irradiation with radiation, for example, 2,3,4-trihydroxybenzophenone, 2,3, 4,4'-tetrahydroxybenzophenone, 3'-methoxy-2,3,4,4'-tetrahydroxybenzophenone, 2,2',5,5'-tetramethyl-2',4, 4'-trihydroxytriphenylmethane, 4,4'-[1-[4-[1-(4-hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphenol and 2,4,4- 1,2-benzoquinonediazide-4-sulfonic acid esters such as trimethyl-2',4',7-trihydroxy-2-phenylflavan, 1,2-naphthoquinonediazide-4-sulfonic acid Preferred examples include esters or 1,2-naphthoquinonediazide-5-sulfonic acid esters.
퀴논디아지드 화합물 (B1)은 1종 단독으로 이용해도 되고, 2종 이상을 병용 해도 된다.A quinonediazide compound (B1) may be used individually by 1 type, and may use 2 or more types together.
또한, 감방사선성 산 생성 화합물 (B)는, 광이 조사됨으로써 산을 생성하는 화합물이면, 퀴논디아지드 화합물 (B1)에는 한정되지 않고, 다른 산 발생제 (B2)여도 무방하다. 산 발생제 (B2)로서는, 예를 들면, 오늄염 화합물, 할로겐 함유 화합물, 설폰 화합물, 설폰산 화합물, 설폰이미드 화합물, 디아조메탄 화합물을 들 수 있다.In addition, the radiation-sensitive acid generating compound (B) is not limited to a quinonediazide compound (B1), as long as it is a compound which produces|generates an acid by irradiating light, Another acid generator (B2) may be sufficient. Examples of the acid generator (B2) include an onium salt compound, a halogen-containing compound, a sulfone compound, a sulfonic acid compound, a sulfonimide compound, and a diazomethane compound.
감방사선성 산 생성 화합물 (B)의 첨가량은, 수지 (A) 100질량부에 대해서, 바람직하게는 5~100질량부이고, 보다 바람직하게는 10~50질량부이며, 특히 바람직하게는 15~30질량부이다. 5질량부 미만이면, 광을 흡수하여 생성되는 산의 양이 적어지므로, 광조사 전후의 알칼리 수용액에 대한 용해도에 차이를 내지 못하여, 패터닝이 곤란해지고, 또한, 공중합체 (I)의 에폭시기와의 반응에 있어서도, 관여하는 산의 양이 적어지므로, 조성물로부터 얻어지는 패턴의 내열성에 문제가 발생할 우려가 있다. 또, 100질량부를 초과하면, 단시간의 방사선 조사에서는 첨가한 감방사선성 산 생성 화합물의 대부분이 아직 그대로의 형태로 잔존하기 때문에, 알칼리 수용액에 대한 불용화 효과가 너무 높아서 현상하는 것이 곤란해지는 경우가 있다.The addition amount of the radiation-sensitive acid generating compound (B) is preferably 5 to 100 parts by mass, more preferably 10 to 50 parts by mass, particularly preferably 15 to 100 parts by mass of the resin (A). 30 parts by mass. If it is less than 5 parts by mass, the amount of acid produced by absorbing light is small, so there is no difference in solubility in aqueous alkali solution before and after light irradiation, patterning becomes difficult, and the epoxy group of the copolymer (I) Also in the reaction, since the amount of the acid involved is reduced, there is a possibility that a problem may arise in the heat resistance of the pattern obtained from the composition. In addition, when it exceeds 100 parts by mass, most of the added radiation-sensitive acid-generating compound still remains in its form after a short period of irradiation. have.
특히, 감방사선성 산 생성 화합물 (B)의 첨가량을, 수지 (A) 100중량부에 대해서 15~30질량부의 범위 내로 함으로써, 공정 (α) 실행 후에 발생하는 기포의 양을 억제하는 효과를 높일 수 있다.In particular, by setting the amount of the radiation-sensitive acid generating compound (B) to be added within the range of 15 to 30 parts by mass with respect to 100 parts by weight of the resin (A), the effect of suppressing the amount of bubbles generated after the step (α) is performed is enhanced. can
《그 외의 배합제 (C)》《Other compounding agents (C)》
대상막(1)의 경도나 내열성을 향상시키는 관점에서, 이하에 나타내는 (메타)아크릴 화합물, 에폭시 화합물 등을 병용하는 것도 가능하다.From a viewpoint of improving the hardness and heat resistance of the
(메타)아크릴 화합물은, 최종 가열 시에 (메타)아크릴 화합물 자신이 중합함으로써 형성한 도막(塗膜)의 경도, 내열성 등을 더 향상시키기 위해서 이용한다. (메타)아크릴 화합물로서는, 단관능 (메타)아크릴레이트, 2관능 (메타)아크릴레이트, 3관능 이상의 (메타)아크릴레이트를 들 수 있다. 에폭시 화합물은, 전술한 공중합체 (I) 및 방사선 조사에 의해 감방사선성 산 생성 화합물로부터 생성되는 산과의 반응점을 최종 가열 시에 조정시키기 위해서 이용된다.A (meth)acrylic compound is used in order to improve the hardness, heat resistance, etc. of the coating film formed by superposing|polymerizing by (meth)acrylic compound itself at the time of final heating. As a (meth)acrylic compound, monofunctional (meth)acrylate, bifunctional (meth)acrylate, and trifunctional or more than trifunctional (meth)acrylate are mentioned. The epoxy compound is used in order to adjust the reaction point with the above-mentioned copolymer (I) and the acid produced|generated from the radiation-sensitive acid-generating compound by irradiation at the time of final heating.
에폭시 화합물로서는, 예를 들면 비스페놀 A형 에폭시 수지, 페놀노볼락형 에폭시 수지, 크레졸노볼락형 에폭시 수지, 환형 지방족 에폭시 수지, 글리시딜에스테르계 에폭시 수지, 글리시딜아민계 에폭시 수지, 복소환식 에폭시 수지 등을 들 수 있다. 이 중에서 가열 처리 후에도 착색되기 어렵다는 점에서, 페놀노볼락형 에폭시 수지, 크레졸노볼락형 에폭시 수지, 환형 지방족 에폭시 수지 및 글리시딜에스테르계 에폭시 수지가 바람직하다.Examples of the epoxy compound include bisphenol A epoxy resin, phenol novolak epoxy resin, cresol novolak epoxy resin, cyclic aliphatic epoxy resin, glycidyl ester epoxy resin, glycidylamine epoxy resin, heterocyclic An epoxy resin etc. are mentioned. Among these, a phenol novolak-type epoxy resin, a cresol novolak-type epoxy resin, a cyclic aliphatic epoxy resin, and a glycidyl ester-type epoxy resin are preferable from the point of being hard to color even after heat processing.
배합제 (C)로서, 가교성 화합물을 포함할 수도 있다. 가교성 화합물은, 예를 들면, 옥시라닐기(1,2-에폭시 구조), 옥세타닐기(1,3-에폭시 구조), 메틸올기, 비닐기, (메타)아크릴로일기, 환형 카보네이트기 등의 가교성 기를 갖는 화합물을 포함한다.As a compounding agent (C), you may contain a crosslinkable compound. The crosslinkable compound is, for example, an oxiranyl group (1,2-epoxy structure), an oxetanyl group (1,3-epoxy structure), a methylol group, a vinyl group, a (meth)acryloyl group, a cyclic carbonate group, etc. compounds having a crosslinkable group of
가교성 기 중에서도, 옥시라닐기(에폭시기), 옥세타닐기, 메틸올기, 및 이들의 조합이 바람직하고, 옥시라닐기 및 옥세타닐기가 보다 바람직하며, 옥시라닐기가 더 바람직하다.Among the crosslinkable groups, an oxiranyl group (epoxy group), oxetanyl group, methylol group, and combinations thereof are preferable, an oxiranyl group and an oxetanyl group are more preferable, and an oxiranyl group is still more preferable.
배합제 (C)로서, 계면활성제를 포함할 수 있다. 계면활성제로서는, 예를 들면, 불소계 계면활성제나 실리콘계 계면활성제, 및 그 외의 계면활성제를 이용할 수 있다.As the compounding agent (C), a surfactant may be included. As surfactant, a fluorine-type surfactant, silicone type surfactant, and other surfactant can be used, for example.
대상막(1)에 포함되는 감방사선성 조성물은, 상술한 각 성분을 균일하게 혼합함으로써 용이하게 조제할 수 있다. 혼합할 때, 통상 적당한 용매에 용해시켜 용액의 형태로 사용에 제공된다. 이용하는 용매로서는, 공중합체 (I) 및 감방사선성 산 생성 화합물 (B)를 균일하게 용해시킬 수 있고, 각 성분과 반응하지 않는 것이 이용된다.The radiation-sensitive composition contained in the
이러한 용매로서는, 예를 들면 메탄올, 에탄올 등의 알코올류; 테트라히드로푸란 등의 에테르류; 에틸렌글리콜모노메틸에테르, 에틸렌글리콜모노에틸에테르 등의 글리콜에테르류; 메틸셀로솔브아세테이트, 에틸셀로솔브아세테이트 등의 에틸렌글리콜알킬에테르아세테이트류; 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노에틸에테르, 디에틸렌글리콜디메틸에테르, 디에틸렌글리콜메틸에틸에테르 등의 디에틸렌글리콜류; 프로필렌글리콜메틸에테르아세테이트, 프로필렌글리콜프로필에테르아세테이트 등의 프로필렌글리콜알킬에테르아세테이트류; 톨루엔, 크실렌 등의 방향족 탄화수소류; 메틸에틸케톤, 시클로헥사논, 4-히드록시-4-메틸-2-펜타논 등의 케톤류; 2-히드록시프로피온산 에틸, 2-히드록시-2-메틸프로피온산 에틸, 2-히드록시-2-메틸프로피온산 에틸, 에톡시아세트산 에틸, 히드록시아세트산 에틸, 2-히드록시-3-메틸부탄산 메틸, 3-메톡시프로피온산 메틸, 3-메톡시프로피온산 에틸, 3-에톡시프로피온산 에틸, 3-에톡시프로피온산 메틸, 아세트산 에틸, 아세트산 부틸 등의 에스테르류를 이용할 수 있다.As such a solvent, For example, alcohols, such as methanol and ethanol; ethers such as tetrahydrofuran; glycol ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; ethylene glycol alkyl ether acetates such as methyl cellosolve acetate and ethyl cellosolve acetate; diethylene glycols such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, and diethylene glycol methyl ethyl ether; propylene glycol alkyl ether acetates such as propylene glycol methyl ether acetate and propylene glycol propyl ether acetate; aromatic hydrocarbons such as toluene and xylene; ketones such as methyl ethyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; Ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, ethyl 2-hydroxy-2-methylpropionate, ethyl ethoxyacetate, ethyl hydroxyacetate, methyl 2-hydroxy-3-methylbutanoate and esters such as methyl 3-methoxypropionate, ethyl 3-methoxypropionate, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate, ethyl acetate, and butyl acetate.
또한, N-메틸포름아미드, N,N-디메틸포름아미드, N-메틸포름아닐리드, N-메틸아세트아미드, N,N-디메틸아세트아미드, N-메틸피롤리돈, 디메틸술폭시드, 벤질에틸에테르, 디헥실에테르, 아세토닐아세톤, 이소포론, 카프로산, 카프릴산, 1-옥탄올, 1-노난올, 벤질알코올, 아세트산 벤질, 안식향산 에틸, 옥살산 디에틸, 말레산 디에틸, γ-부티로락톤, 탄산 에틸렌, 탄산 프로필렌, 페닐셀로솔브아세테이트 등의 고(高)비점 용제를 첨가할 수도 있다.Further, N-methylformamide, N,N-dimethylformamide, N-methylformanilide, N-methylacetamide, N,N-dimethylacetamide, N-methylpyrrolidone, dimethyl sulfoxide, benzyl ethyl ether , dihexyl ether, acetonylacetone, isophorone, caproic acid, caprylic acid, 1-octanol, 1-nonanol, benzyl alcohol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-buty High boiling point solvents, such as lolactone, ethylene carbonate, propylene carbonate, and phenyl cellosolve acetate, can also be added.
이러한 용제 중에서는, 용해성, 각 성분과의 반응성 및 도막을 형성하기 쉽다는 점에서, 에틸렌글리콜모노에틸에테르 등의 글리콜에테르류; 에틸셀로솔브아세테이트 등의 에틸렌글리콜알킬에테르아세테이트류; 2-히드록시프로피온산에틸 등의 에스테르류; 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜메틸에틸에테르 등의 디에틸렌글리콜류; 프로필렌글리콜메틸에테르아세테이트 등의 프로필렌글리콜알킬에테르아세테이트류가 적절하다.Among these solvents, from the viewpoint of solubility, reactivity with each component, and easy formation of a coating film, glycol ethers such as ethylene glycol monoethyl ether; ethylene glycol alkyl ether acetates such as ethyl cellosolve acetate; esters such as ethyl 2-hydroxypropionate; diethylene glycols such as diethylene glycol monomethyl ether and diethylene glycol methyl ethyl ether; Propylene glycol alkyl ether acetates, such as propylene glycol methyl ether acetate, are suitable.
또, 조성물 용액의 조제에 있어서는, 예를 들면 공중합체 (I)의 용액, 감방사선성 산 생성 화합물의 용액 및 그 외의 배합제의 용액 각각을 별도로 조제해 두고, 사용 직전에 이들 용액을 소정의 비율로 혼합할 수도 있다. 이상과 같이 하여 조제한 조성물 용액은, 구멍직경 0.2μm의 멤브레인 필터 등을 이용하여 여과한 후, 사용에 제공할 수도 있다.In addition, in the preparation of the composition solution, for example, a solution of the copolymer (I), a solution of a radiation-sensitive acid generating compound, and a solution of other compounding agents are separately prepared, and these solutions are prepared immediately before use. It can also be mixed in proportions. The composition solution prepared as mentioned above can also be used for use, after filtering using the membrane filter etc. with a pore diameter of 0.2 micrometer.
대상막(1)을 제작할 때에는, 상술한 조성물 용액을, 소정의 기체 표면(도 1에서는 층(2)의 상면)에 도포하고, 가열에 의해 용매를 제거함으로써 원하는 도막이 형성된다. 기체 표면에 대한 도포 방법은 특별히 한정되지 않으며, 예를 들면 스프레이법, 롤 코팅법, 회전 도포법 등의 각종 방법을 채용할 수 있다.When producing the
감방사선성 조성물의 도막의 가열 조건은, 각 성분의 종류, 배합 비율 등에 따라서 상이하지만, 통상은 70~90℃에서 5~15분간 정도이다. 다음에, 얻어진 도막에 소정의 패턴의 마스크를 통해, 자외선을 조사한 후, 현상액을 이용하여 현상하고, 불필요한 부분을 제거하여 패턴을 형성시킨다. 도 1에는, 패터닝이 된 후의 도막(대상막(1))이 도시되어 있다.Although the heating conditions of the coating film of a radiation-sensitive composition change with the kind of each component, a compounding ratio, etc., it is about 5 to 15 minutes at 70-90 degreeC normally. Next, the obtained coating film is irradiated with ultraviolet rays through a mask of a predetermined pattern, then developed using a developer, and unnecessary portions are removed to form a pattern. 1, the coating film (target film 1) after patterning is shown.
현상액으로서는, 예를 들면 수산화나트륨, 수산화칼륨, 탄산 나트륨, 규산 나트륨, 메타규산 나트륨, 암모니아수, 에틸아민, n-프로필아민, 디에틸아민, 디-n-프로필아민, 트리에틸아민, 메틸디에틸아민, 디메틸에탄올아민, 트리에탄올아민, 테트라메틸암모늄히드록시드, 테트라에틸암모늄히드록시드, 피롤, 피페리딘, 1,8-디아자비시클로(5.4.0)-7-운데센, 1,5-디아자비시클로(4.3.0)-5-노난 등의 알칼리류의 수용액을 사용할 수 있다. 또 상기 알칼리류의 수용액에 메탄올, 에탄올 등의 수용성 유기용매나 계면활성제를 적당량 첨가한 수용액을 현상액으로서 사용할 수도 있다.Examples of the developer include sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, aqueous ammonia, ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine, methyldiethyl Amine, dimethylethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, pyrrole, piperidine, 1,8-diazabicyclo(5.4.0)-7-undecene, 1,5 Aqueous solutions of alkalis such as -diazabicyclo(4.3.0)-5-nonane can be used. Also, an aqueous solution obtained by adding an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant to the aqueous alkali solution may be used as a developing solution.
현상 시간은 통상 30~180초간이며, 또 현상의 수법은 액 축적법, 디핑법 등 중 어느 것이어도 된다. 현상 후에는, 유수 세정을 30~90초간 행하고, 압축 공기나 압축 질소로 풍건시킴으로써, 불필요한 부분을 제거하여, 패턴을 형성시킬 수 있다. 그 후, 예를 들면 자외선을 조사함으로써 미(未)노광 부분인 패턴 중에 잔존하고 있는 산 생성 화합물을 산으로 변화시킨다. 또한, 핫 플레이트, 오븐 등의 가열 장치를 이용하여, 소정의 온도, 예를 들면 150~250℃로 소정의 시간, 예를 들면 핫 플레이트 상이라면 5~30분간, 오븐 중이라면 30~90분간, 가열 처리를 함으로써 내열성, 투명성, 경도 등이 우수한 대상막(1)을 얻을 수 있다.The development time is usually 30 to 180 seconds, and the development method may be any of a liquid accumulation method, a dipping method, and the like. After image development, an unnecessary part can be removed and a pattern can be formed by performing running water washing|cleaning for 30 to 90 second and air-drying with compressed air or compressed nitrogen. Then, for example, by irradiating an ultraviolet-ray, the acid-generating compound remaining in the pattern which is an unexposed part is changed into an acid. In addition, using a heating device such as a hot plate or oven, at a predetermined temperature, for example, 150 to 250 ° C. for a predetermined time, for example, 5 to 30 minutes on a hot plate, 30 to 90 minutes if in an oven, By heat-treating, the
[실시예][Example]
다음에 실시예를 들어 본 발명을 더 구체적으로 설명하는데, 본 발명은 이들 실시예에 의해서 아무런 제약도 받지 않는다. 또, 이하에서는, 특별히 언급하지 않는 한, 부는 「질량부」를 나타낸다.Next, the present invention will be more specifically described by way of examples, but the present invention is not limited by these examples. In addition, below, unless otherwise indicated, a part shows "mass part".
[합성예 1] (공중합체 (I-1)의 합성)[Synthesis Example 1] (Synthesis of Copolymer (I-1))
냉각관 및 교반기를 구비한 플라스크에, 2,2'-아조비스(2,4-디메틸발레로니트릴) 10부 및 프로필렌글리콜모노메틸에테르아세테이트(PGMEA) 200부를 넣었다. 계속해서, 메타크릴산 15부, 글리시딜메타크릴레이트 20부, 3,4-에폭시시클로헥실메틸메타크릴레이트 15부, 스티렌 50부를 넣고, 질소 치환한 후, 천천히 교반하면서, 용액의 온도를 70℃로 상승시키고, 이 온도를 5시간 유지하여 중합함으로써, 알칼리 가용성 수지인 공중합체 (I-1)을 함유하는 중합체 용액을 얻었다. 얻어진 중합체를 헥산 중에서 재침전시켜, 여과, 진공 건조에 의해 정제를 행하고, 공중합체 (I-1)을 PGMEA에 용해시켜 중합체 농도 30질량% 용액으로 만들었다. 이 공중합체 (I-1)의 중량 평균 분자량(Mw)은 10,000, 중량 평균 분자량(Mw)/수 평균 분자량(Mn)은 2.3이었다.Into a flask equipped with a cooling tube and a stirrer, 10 parts of 2,2'-azobis(2,4-dimethylvaleronitrile) and 200 parts of propylene glycol monomethyl ether acetate (PGMEA) were placed. Then, 15 parts of methacrylic acid, 20 parts of glycidyl methacrylate, 15 parts of 3,4-epoxycyclohexylmethyl methacrylate, and 50 parts of styrene are put, and after nitrogen substitution, the temperature of the solution is lowered while stirring slowly. The polymer solution containing the copolymer (I-1) which is an alkali-soluble resin was obtained by raising to 70 degreeC, and holding this temperature for 5 hours and superposing|polymerizing. The obtained polymer was reprecipitated in hexane and purified by filtration and vacuum drying. The copolymer (I-1) was dissolved in PGMEA to obtain a polymer concentration of 30% by mass solution. The weight average molecular weight (Mw) of this copolymer (I-1) was 10,000, and the weight average molecular weight (Mw)/number average molecular weight (Mn) was 2.3.
[합성예 2~4](공중합체 (I-2)~(I-4)의 합성)[Synthesis Examples 2 to 4] (Synthesis of copolymers (I-2) to (I-4))
하기 표 1에 나타내는 종류 및 배합량(질량부)의 각 성분을 이용한 것 이외에는 합성예 1과 동일한 수법으로, 각각 공중합체 (I-2)~(I-4)를 포함하는 중합체 용액을 얻었다. 표 1에 있어서, 「-」는 해당하는 성분을 사용하지 않은 것을 나타낸다.Polymer solutions each containing copolymers (I-2) to (I-4) were obtained in the same manner as in Synthesis Example 1 except that each component of the type and compounding amount (parts by mass) shown in Table 1 was used. In Table 1, "-" represents that the corresponding component is not used.
표 1 중의 각 기호의 의미는 이하와 같다.The meaning of each symbol in Table 1 is as follows.
MA:메타크릴산 MA: methacrylic acid
GMA:글리시딜메타크릴레이트 GMA: glycidyl methacrylate
ST:스티렌 ST: Styrene
M-100:3,4-에폭시시클로헥실메틸메타크릴레이트(사이클로머 M100 (주)다이셀 제조) M-100:3,4-epoxycyclohexylmethyl methacrylate (Cyclomer M100 manufactured by Daicel Co., Ltd.)
DCM:메타크릴산 디시클로펜타닐 DCM: dicyclofentanyl methacrylic acid
CHMI:N-시클로헥실말레이미드 CHMI:N-Cyclohexylmaleimide
PMI:N-페닐말레이미드 PMI:N-phenylmaleimide
PIPE:p-이소프로페닐페놀 PIPE:p-isopropenylphenol
OXMA:(3-에틸옥세탄-3-일)메틸메타크릴레이트 OXMA: (3-ethyloxetan-3-yl)methyl methacrylate
[감방사선성 조성물의 함유 성분][Ingredients of the radiation-sensitive composition]
실시예 및 비교예의 감방사선성 조성물의 조제에 이용한 공중합체 (I)(수지 (A)), 감방사선성 산 생성 화합물 (B), 그 외의 배합제로서의 유기용매 (C)를 이하에 나타낸다.The copolymer (I) (resin (A)), the radiation-sensitive acid-generating compound (B), and the organic solvent (C) as other compounding agents used in the preparation of the radiation-sensitive compositions of Examples and Comparative Examples are shown below.
<공중합체 (I)><Copolymer (I)>
공중합체 I-1~I-4:합성예 1~4에서 합성한 공중합체 (I-1)~(I-4) Copolymer I-1 to I-4: Copolymers (I-1) to (I-4) synthesized in Synthesis Examples 1-4
<감방사선성 산 생성 화합물 (B)><Radiation-sensitive acid-generating compound (B)>
B-1:4,4'-[1-[4-[1-(4-히드록시페닐)-1-메틸에틸]페닐]에틸리덴]비스페놀(1.0몰)과 1,2-나프토퀴논디아지드-5-설폰산 클로리드(2.0몰)의 축합물 B-1:4,4'-[1-[4-[1-(4-hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphenol (1.0 mol) and 1,2-naphthoquinonedia Condensate of zid-5-sulfonic acid chloride (2.0 mol)
B-2:1,1,1-트리(p-히드록시페닐)에탄(1.0몰)과 1,2-나프토퀴논디아지드-5-설폰산 클로리드(2.0몰)의 축합물 B-2: Condensate of 1,1,1-tri(p-hydroxyphenyl)ethane (1.0 mol) and 1,2-naphthoquinonediazide-5-sulfonic acid chloride (2.0 mol)
<유기용매 (C)><Organic solvent (C)>
C-1:디에틸렌글리콜메틸에틸에테르(EDM) C-1: diethylene glycol methyl ethyl ether (EDM)
C-2:프로필렌글리콜모노메틸에테르아세테이트(PGMEA) C-2: propylene glycol monomethyl ether acetate (PGMEA)
[평가][evaluation]
실시예 및 비교예의 감방사선성 조성물을 이용하여 대상막(1)을 제조하고, 하기 항목을 평가했다.A
<실시예 1><Example 1>
공중합체 (I-1)을 함유하는 농도 30질량%의 중합체 용액에, 공중합체 (I-1) 100부를 기준으로 하여, 감방사선성 산 생성 화합물 (B-1) 30부를 혼합했다. 또한, 얻어진 혼합물을 용매 이외의 전성분 농도가 30질량%가 되도록 유기용매 (C-1)에 용해시킨 후, 구멍직경 0.2μm의 멤브레인 필터로 여과하여, 감방사선성 조성물을 조제했다.30 parts of a radiation-sensitive acid generating compound (B-1) was mixed with the 30 mass % density|concentration polymer solution containing copolymer (I-1) based on 100 parts of copolymer (I-1). Further, the obtained mixture was dissolved in an organic solvent (C-1) so that the concentration of all components other than the solvent was 30% by mass, and then filtered through a membrane filter having a pore diameter of 0.2 µm to prepare a radiation-sensitive composition.
<실시예 2~9, 비교예 1~4><Examples 2 to 9, Comparative Examples 1 to 4>
하기 표 2에 나타내는 종류의 각 성분을 이용한 것 이외에는 실시예 1과 동일하게 조작하여, 실시예 2~9 및 비교예 1~4의 감방사선성 조성물을 조제했다.Except having used each component of the kind shown in following Table 2, it operated similarly to Example 1, and the radiation-sensitive composition of Examples 2-9 and Comparative Examples 1-4 was prepared.
<기포의 평가><Evaluation of bubbles>
실리콘 기판 상에, 하기 표 2에 나타내는 실시예 및 비교예의 감방사선성 조성물을 스피너를 이용하여 도포한 후, 90℃에서 2분간 핫 플레이트 상에서 프리베이크하여 막두께 6.0μm의 도막을 형성했다. 계속해서, 2.38질량% 농도의 테트라메틸암모늄히드록시드 수용액에서 23℃에 있어서 60초간 액 축적법으로 현상했다.On a silicon substrate, the radiation-sensitive compositions of Examples and Comparative Examples shown in Table 2 below were applied using a spinner, and then prebaked on a hot plate at 90° C. for 2 minutes to form a coating film having a thickness of 6.0 µm. Then, it developed by the liquid accumulation method in 23 degreeC for 60 second in the tetramethylammonium hydroxide aqueous solution of 2.38 mass % density|concentration.
그 다음에, 초순수로 1분간 유수 세정을 행한 후에 건조를 행하여, 대상막(1)을 모의한 발포 평가용 기판을 작성했다. 이 평가용 기판에 대해, 조도 2000mW/cm2, 노광량 600mJ/cm2로, LED 소자(4)를 탑재한 광원(3)으로부터, 표 2에 기재된 파장의 자외선(L1)을 조사했다.Then, after performing 1 minute running-water washing with ultrapure water, drying was performed, and the board|substrate for foam evaluation which simulated the target film|
자외선(L1)을 조사 후, 도막 표면 상의 기포에 대해서, 하기의 기준에 의거하여 6단계의 육안 평가를 행했다.After irradiating the ultraviolet-ray (L1), 6 steps of visual evaluation were performed about the bubble on the coating-film surface based on the following reference|standard.
(평가 기준)(Evaluation standard)
0… 기포의 발생을 확인할 수 없었다.0… The occurrence of air bubbles could not be confirmed.
1… 도막 단부에 있어서 부분적으로 기포가 확인되었다.One… Bubbles were partially confirmed at the end of the coating film.
2… 도막 단부에 있어서 전면적으로 기포가 확인되었다.2… Bubbles were confirmed all over the edge of the coating film.
3… 도막 중앙부에 있어서 부분적으로 기포가 확인되었다.3… Bubbles were partially confirmed in the central part of the coating film.
4… 도막 중앙부에 있어서 전면적으로 기포가 확인되었다.4… In the central part of the coating film, air bubbles were confirmed all over.
5… 도막 중앙부에 있어서 전면적으로 기포가 확인됨과 더불어, 도막의 일부에 있어서 결손이 발생했다.5… In the central part of the coating film, while bubbles were confirmed all over, the defect generate|occur|produced in a part of the coating film.
또한, 상기와 같이, 도막은 스핀 코팅으로 도포되어 있기 때문에, 평가용 기판의 단부는 중앙부에 비해 약간 후막화된다. 기포는 막두께가 두꺼울수록 발생하기 쉽기 때문에, 막두께가 비교적 얇은 영역인 도막 중앙부에서 기포가 발생되는 것은, 보다 기포가 발생하기 쉬운 상황인 것으로 판단할 수 있다.Further, as described above, since the coating film is applied by spin coating, the edge of the substrate for evaluation is slightly thicker than the central portion. Since bubbles are more likely to occur as the film thickness is thicker, it can be judged that the occurrence of bubbles in the central portion of the coating film, which is a region having a relatively thin film thickness, is a situation in which bubbles are more likely to occur.
<투과율의 평가><Evaluation of transmittance>
유리 기판(코닝사의 「코닝 7059」) 상에, 하기 표 2에 나타내는 실시예 및 비교예의 감방사선성 조성물을 스피너를 이용하여 도포한 후, 90℃로 2분간 핫 플레이트 상에서 프리베이크하여 막두께 3.0μm 또는 막두께 6.0μm의 도막을 형성했다. 계속해서, 2.38질량% 농도의 테트라메틸암모늄히드록시드 수용액에서 23℃에 있어서 60초간 액 축적법으로 현상했다.On a glass substrate ("Corning 7059" by Corning), the radiation-sensitive compositions of Examples and Comparative Examples shown in Table 2 below were applied using a spinner, and then pre-baked on a hot plate at 90° C. for 2 minutes to have a film thickness of 3.0 A coating film of μm or a film thickness of 6.0 μm was formed. Then, it developed by the liquid accumulation method in 23 degreeC for 60 second in the tetramethylammonium hydroxide aqueous solution of 2.38 mass % density|concentration.
다음에, 초순수로 1분간 유수 세정을 행한 후에 건조를 행하여, 대상막(1)을 모의한 경화막이 형성되어 이루어지는 평가용 기판을 작성했다. 이 평가용 기판에 대해, 조도 2000mW/cm2, 노광량 600mJ/cm2으로, LED 소자(4)를 탑재한 광원(3)으로부터, 표 2에 기재된 파장의 자외선(L1)을 조사했다. 그 후, 230℃로 30분 가열했다. 이 가열은, 대상막(1) 내에 존재하는 가교 성분의 가교 반응(경화)을 촉진시키는 목적으로 행해진 것이다.Next, after performing running water washing|cleaning for 1 minute with ultrapure water, it dried and created the board|substrate for evaluation in which the cured film which simulated the
평가용 기판에 대해, 분광 광도계(히타치제작소 제조 「150-20형 더블빔」)를 이용하여 파장 400nm~800nm의 범위의 광 투과율을 측정하고, 각 유리 기판 평가용 기판에 대해서, 파장 400nm~800nm의 범위의 광 투과율의 최저치(최저 광 투과율이라고도 칭한다.)를 평가했다.With respect to the substrate for evaluation, a spectrophotometer (“150-20 double beam” manufactured by Hitachi, Ltd.) was used to measure the light transmittance in a wavelength range of 400 nm to 800 nm, and for each glass substrate evaluation substrate, a wavelength of 400 nm to 800 nm The lowest value of the light transmittance in the range (also referred to as the lowest light transmittance) was evaluated.
또, 하기 표 2에 나타내는 실시예 및 비교예의 감방사선성 조성물을 이용하여, 도막의 막두께를 6.0μm로 하여 동일한 방법으로 작성된 평가용 기판에 대해서, 같은 평가를 행했다.Moreover, the same evaluation was performed about the board|substrate for evaluation produced by the same method with the film thickness of a coating film being 6.0 micrometers using the radiation-sensitive composition of the Example and the comparative example shown in following Table 2.
또한, 도막의 막두께를 3.0μm로 하여 제조된 평가용 기판의, 자외선(L1) 조사 전에 있어서의 투과율은 70%이며, 도막의 막두께를 6.0μm로 하여 제조된 평가용 기판의, 자외선(L1) 조사 전에 있어서의 투과율은 52%였다.In addition, the transmittance before ultraviolet (L1) irradiation of the evaluation substrate manufactured with the coating film thickness of 3.0 µm was 70%, and the ultraviolet (UV) light ( L1) The transmittance|permeability in before irradiation was 52 %.
각 실시예 1~9 및 비교예 1~4의 감방사선성 조성물, 및 당해 조성물을 이용하여 생성된 대상막(1)의 평가 결과를 하기 표 2에 나타낸다.Table 2 shows the evaluation results of the radiation-sensitive compositions of Examples 1 to 9 and Comparative Examples 1 to 4, and the
도 3은, 각 실시예 또는 비교예에서 이용된 광원(3)으로부터 출사되는, 주피크 파장이 365nm, 385nm, 405nm인 자외선(L1)의 스펙트럼을 겹친 도면이다. 실시예에서는, 주피크 파장이 385nm인 LED 소자(4)를 탑재한 광원(3)으로부터, 평가용 기판에 대해서 자외선(L1)이 조사되었다. 또, 비교예에서는, 실시예에서 이용한 광원(3)과는 별도로, 주피크 파장이 365nm인 LED 소자(4)를 탑재한 광원(3), 또는 405nm의 LED 소자(4)를 탑재한 광원(3)을 준비하여, 각 광원(3)으로부터 평가용 기판에 대해서 자외선(L1)이 조사되었다.Fig. 3 is a diagram in which spectra of ultraviolet rays L1 having main peak wavelengths of 365 nm, 385 nm and 405 nm emitted from the
표 2에 의하면, 감방사선성 조성물이 동일한 재료 조성으로 형성되어 있는, 실시예 1, 비교예 1, 및 비교예 2를 비교하면, 주피크 파장이 365nm, 또는 405nm인 자외선(L1)이 조사된 경우(비교예 1, 비교예 2)에 비해서, 주피크 파장이 385nm인 자외선(L1)이 조사된 경우(실시예 1)는, 대상막(1)의 막두께에 상관없이, 투과율이 높고, 막 내의 발포가 억제되어 있는 것을 알 수 있다.According to Table 2, comparing Example 1, Comparative Example 1, and Comparative Example 2, in which the radiation-sensitive composition is formed of the same material composition, the main peak wavelength is 365 nm or 405 nm ultraviolet (L1) irradiated Compared to the case (Comparative Example 1, Comparative Example 2), when the ultraviolet L1 having a main peak wavelength of 385 nm is irradiated (Example 1), regardless of the film thickness of the
마찬가지로, 표 2에 의하면, 감방사선성 조성물이 동일한 재료 조성으로 형성되어 있는, 실시예 3, 비교예 3, 및 비교예 4를 비교하면, 주피크 파장이 365nm, 또는 405nm인 자외선(L1)이 조사된 경우(비교예 1, 비교예 2)에 비해서, 주피크 파장이 385nm인 자외선(L1)이 조사된 경우(실시예 1)는, 대상막(1)의 막두께에 상관없이, 투과율이 높고, 막 내의 발포가 억제되어 있는 것을 알 수 있다.Similarly, according to Table 2, comparing Example 3, Comparative Example 3, and Comparative Example 4, in which the radiation-sensitive composition is formed with the same material composition, the ultraviolet (L1) having a main peak wavelength of 365 nm or 405 nm is Compared to the irradiated case (Comparative Example 1, Comparative Example 2), when the ultraviolet L1 having a main peak wavelength of 385 nm was irradiated (Example 1), regardless of the film thickness of the
또한, 감방사선성 조성물의 조성을 적절히 변경하여 제조한, 실시예 1~9 중 어느 한 경우에 있어서도, 주피크 파장이 385nm인 자외선(L1)이 조사됨으로써, 대상막(1)의 막두께에 상관없이, 투과율이 높고, 막 내의 발포가 억제되어 있는 것을 알 수 있다.Further, in any one of Examples 1 to 9, which were prepared by appropriately changing the composition of the radiation-sensitive composition, the main peak wavelength was irradiated with ultraviolet (L1) of 385 nm, so that the film thickness of the
또한, 감방사선성 조성물을 포함하여 이루어지는 대상막(1)에 대해서 자외선(L1)을 조사함으로써, 대상막(1) 내에 기포가 발생하는 것은, 예를 들면 하기 (1) 식의 반응이 발생하여, 질소 가스가 발생한 것에서 유래한다고 생각된다. 하기 (1) 식은, 감방사선성 산 생성 화합물 (B)를 구성하는 나프토퀴논디아지드 화합물에 자외선(L1)(하기 (1) 식에서는 hν로 표기)이 조사되었을 경우의 반응이 나타내어져 있다.In addition, the generation of bubbles in the
상기 (1) 식의 반응은, 나프토퀴논디아지드 화합물에 대해서 높은 감광성을 나타내는 파장의 자외선이 조사되면 발생하기 쉽다. 즉, 본 발명에서는, 의도적으로 감광성이 약간 저하하는 파장대의 자외선(L1)을, 감방사선성 산 생성 화합물 (B)를 포함하는 대상막(1)에 대해서 조사시킴으로써, (1) 식의 반응의 진행이 느려지고, 이에 의해서 질소 가스의 생성 속도가 저하한 것으로 생각된다. 그리고, 표 2의 결과에 의하면, 감광성이 약간 저하하는 파장대, 여기서는, 주피크 파장이 385nm인 자외선(L1)을 조사했을 경우여도, 대상막(1)의 투과율이 향상되어 있는 것이 확인되었다.The reaction of the formula (1) is likely to occur when the naphthoquinonediazide compound is irradiated with ultraviolet rays of a wavelength showing high photosensitivity. That is, in the present invention, by intentionally irradiating the
또한, 「과제의 해결 수단」의 항에서 상술한 바와 같이, LED 소자(4)는, 제조 시의 정밀도나 이용 시의 환경에 따라서는, 주피크 파장에 대해서, ±10nm 이내의 범위에서 개체차가 존재하는 경우가 생각된다. 상기의 사정을 감안하면, 대상막(1)에 대해서, LED 소자(4)로부터 주피크 파장이 375nm 이상 395nm 이하의 범위 내에 있는 자외선(L1)을 조사함으로써, 각 실시예와 동일하게, 투과율의 향상과 발포의 억제를 양립할 수 있는 것을 알 수 있다.In addition, as described above in the section of "Means for Solving Problems", the
[별도 실시 형태][Separate embodiment]
도 4에 나타내는 바와 같이, 광원(3)이 파장 365nm 이하의 광을 커트하는 필터(5)를 탑재하고 있고, LED 소자(4)로부터 출사된 자외선(L1)은, 필터(5)에 의해서 파장 365nm 이하의 광이 커트된 상태로, 대상막(1)에 조사되는 것으로 해도 무방하다. 필터(5)는, 예를 들면 유전체 다층막으로 구성된다.As shown in FIG. 4 , the
1: 대상막
2: 층(대상막의 하층)
3: 광원
4: LED 소자
5: 필터
L1: 자외선1: target film
2: Layer (lower layer of target film)
3: light source
4: LED element
5: filter
L1: Ultraviolet
Claims (21)
상기 감방사선성 조성물은,
산기를 갖는 라디칼 중합성 화합물 (a), 에폭시기를 갖는 라디칼 중합성 화합물 (b), 및 다른 라디칼 중합성 화합물 (c)의 공중합체인 알칼리 수용액에 가용인 수지 (A)와,
감방사선성 산 생성 화합물 (B)를 갖고,
상기 감방사선성 조성물에 대해서, LED 소자로부터 주(主)피크 파장이 375nm 이상 395nm 이하의 범위 내에 있는 자외선을 조사하여, 상기 감방사선성 조성물의 투과율을 향상시키는 공정 (α)를 포함하는 것을 특징으로 하는 감방사선성 조성물의 처리 방법.A method of treating a radiation-sensitive composition comprising:
The radiation-sensitive composition,
A radically polymerizable compound (a) having an acid group, a radically polymerizable compound (b) having an epoxy group, and a resin (A) soluble in aqueous alkali solution which is a copolymer of another radically polymerizable compound (c);
having a radiation-sensitive acid-generating compound (B),
A step (α) of improving the transmittance of the radiation-sensitive composition by irradiating the radiation-sensitive composition with ultraviolet rays having a main peak wavelength in the range of 375 nm or more and 395 nm or less from the LED element; A method of treating a radiation-sensitive composition comprising:
상기 자외선은, 반치폭이 20nm 이하인 것을 특징으로 하는 감방사선성 조성물의 처리 방법.The method according to claim 1,
The ultraviolet rays have a half maximum width of 20 nm or less.
상기 자외선은, 파장 365nm에 있어서의 광 강도가, 상기 주피크 파장의 광 강도에 대해서 10% 미만인 것을 특징으로 하는 감방사선성 조성물의 처리 방법.The method according to claim 1,
The ultraviolet light has a light intensity at a wavelength of 365 nm that is less than 10% of the light intensity at the main peak wavelength.
상기 자외선은, 파장 365nm에 있어서의 광 강도가, 상기 주피크 파장의 광 강도에 대해서 10% 미만인 것을 특징으로 하는 감방사선성 조성물의 처리 방법.3. The method according to claim 2,
The ultraviolet light has a light intensity at a wavelength of 365 nm that is less than 10% of the light intensity at the main peak wavelength.
상기 공정 (α)는, 상기 LED 소자로부터 파장 365nm 이하의 광을 커트하는 필터를 통해 상기 자외선을 상기 감방사선성 조성물에 조사하는 공정인 것을 특징으로 하는 감방사선성 조성물의 처리 방법.4. The method according to claim 3,
The said process (α) is a process of irradiating the said ultraviolet-ray to the said radiation-sensitive composition through a filter which cuts the light of wavelength 365nm or less from the said LED element, The treatment method of the radiation-sensitive composition characterized by the above-mentioned.
상기 공정 (α)는, 상기 LED 소자로부터 파장 365nm 이하의 광을 커트하는 필터를 통해 상기 자외선을 상기 감방사선성 조성물에 조사하는 공정인 것을 특징으로 하는 감방사선성 조성물의 처리 방법.5. The method according to claim 4,
The said process (α) is a process of irradiating the said ultraviolet-ray to the said radiation-sensitive composition through a filter which cuts the light of wavelength 365nm or less from the said LED element, The treatment method of the radiation-sensitive composition characterized by the above-mentioned.
상기 감방사선성 산 생성 화합물 (B)는, 1,2-퀴논디아지드 화합물인 것을 특징으로 하는 감방사선성 조성물의 처리 방법.7. The method according to any one of claims 1 to 6,
The radiation-sensitive acid-generating compound (B) is a 1,2-quinonediazide compound.
상기 감방사선성 조성물에서 차지하는, 상기 감방사선성 산 생성 화합물 (B)의 비율은, 상기 수지 (A) 100질량부에 대해서 15~30질량부인 것을 특징으로 하는 감방사선성 조성물의 처리 방법.7. The method according to any one of claims 1 to 6,
The proportion of the radiation-sensitive acid-generating compound (B) in the radiation-sensitive composition is 15 to 30 parts by mass with respect to 100 parts by mass of the resin (A).
상기 다른 라디칼 중합성 화합물 (c)가, 지환식 구조를 갖는 (메타)아크릴산 에스테르, 방향환 구조를 갖는 (메타)아크릴산 에스테르, 방향족 비닐 화합물, N-치환 말레이미드 화합물, 및 복소환 구조를 갖는 비닐 화합물로 이루어지는 군에서 선택되는 적어도 1종의 단량체에서 유래하는 구조 단위인 것을 특징으로 하는 감방사선성 조성물의 처리 방법.7. The method according to any one of claims 1 to 6,
The other radically polymerizable compound (c) is a (meth)acrylic acid ester having an alicyclic structure, a (meth)acrylic acid ester having an aromatic ring structure, an aromatic vinyl compound, an N-substituted maleimide compound, and a heterocyclic structure. A method for treating a radiation-sensitive composition, characterized in that it is a structural unit derived from at least one monomer selected from the group consisting of vinyl compounds.
하지(下地)막을 성막하는 공정 (β1)과,
상기 공정 (β1)에 의해서 성막된 상기 하지막의 상층에, 상기 감방사선성 조성물을 도포하는 공정 (β2)와,
상기 공정 (β2) 후, 상기 감방사선성 조성물에 대해서, 프리베이크, 노광, 및 현상의 각 처리를 순차적으로 실행하는 공정 (β3)을 갖고,
상기 공정 (α)는, 상기 공정 (β3) 후에 실행되는 것을 특징으로 하는 감방사선성 조성물의 처리 방법.7. The method according to any one of claims 1 to 6,
A step (β1) of forming an underlying film;
a step (β2) of applying the radiation-sensitive composition to the upper layer of the base film formed by the step (β1);
After the step (β2), a step (β3) of sequentially performing each treatment of prebaking, exposure, and development on the radiation-sensitive composition;
The method for treating a radiation-sensitive composition, wherein the step (α) is performed after the step (β3).
상기 감방사선성 조성물에서 차지하는, 상기 감방사선성 산 생성 화합물 (B)의 비율은, 상기 수지 (A) 100질량부에 대해서 15~30질량부인 것을 특징으로 하는 감방사선성 조성물의 처리 방법.8. The method of claim 7,
The proportion of the radiation-sensitive acid-generating compound (B) in the radiation-sensitive composition is 15 to 30 parts by mass with respect to 100 parts by mass of the resin (A).
상기 다른 라디칼 중합성 화합물 (c)가, 지환식 구조를 갖는 (메타)아크릴산 에스테르, 방향환 구조를 갖는 (메타)아크릴산 에스테르, 방향족 비닐 화합물, N-치환 말레이미드 화합물, 및 복소환 구조를 갖는 비닐 화합물로 이루어지는 군에서 선택되는 적어도 1종의 단량체에서 유래하는 구조 단위인 것을 특징으로 하는 감방사선성 조성물의 처리 방법.12. The method of claim 11,
The other radically polymerizable compound (c) is a (meth)acrylic acid ester having an alicyclic structure, a (meth)acrylic acid ester having an aromatic ring structure, an aromatic vinyl compound, an N-substituted maleimide compound, and a heterocyclic structure. A method for treating a radiation-sensitive composition, characterized in that it is a structural unit derived from at least one monomer selected from the group consisting of vinyl compounds.
하지막을 성막하는 공정 (β1)과,
상기 공정 (β1)에 의해서 성막된 상기 하지막의 상층에, 상기 감방사선성 조성물을 도포하는 공정 (β2)와,
상기 공정 (β2) 후, 상기 감방사선성 조성물에 대해서, 프리베이크, 노광, 및 현상의 각 처리를 순차적으로 실행하는 공정 (β3)을 갖고,
상기 공정 (α)는, 상기 공정 (β3) 후에 실행되는 것을 특징으로 하는 감방사선성 조성물의 처리 방법.13. The method of claim 12,
a step (β1) of forming an underlying film;
a step (β2) of applying the radiation-sensitive composition to the upper layer of the base film formed by the step (β1);
After the step (β2), a step (β3) of sequentially performing each treatment of prebaking, exposure, and development on the radiation-sensitive composition;
The method for treating a radiation-sensitive composition, wherein the step (α) is performed after the step (β3).
상기 다른 라디칼 중합성 화합물 (c)가, 지환식 구조를 갖는 (메타)아크릴산 에스테르, 방향환 구조를 갖는 (메타)아크릴산 에스테르, 방향족 비닐 화합물, N-치환 말레이미드 화합물, 및 복소환 구조를 갖는 비닐 화합물로 이루어지는 군에서 선택되는 적어도 1종의 단량체에서 유래하는 구조 단위인 것을 특징으로 하는 감방사선성 조성물의 처리 방법.8. The method of claim 7,
The other radically polymerizable compound (c) is a (meth)acrylic acid ester having an alicyclic structure, a (meth)acrylic acid ester having an aromatic ring structure, an aromatic vinyl compound, an N-substituted maleimide compound, and a heterocyclic structure. A method for treating a radiation-sensitive composition, characterized in that it is a structural unit derived from at least one monomer selected from the group consisting of vinyl compounds.
하지막을 성막하는 공정 (β1)과,
상기 공정 (β1)에 의해서 성막된 상기 하지막의 상층에, 상기 감방사선성 조성물을 도포하는 공정 (β2)와,
상기 공정 (β2) 후, 상기 감방사선성 조성물에 대해서, 프리베이크, 노광, 및 현상의 각 처리를 순차적으로 실행하는 공정 (β3)을 갖고,
상기 공정 (α)는, 상기 공정 (β3) 후에 실행되는 것을 특징으로 하는 감방사선성 조성물의 처리 방법.15. The method of claim 14,
a step (β1) of forming an underlying film;
a step (β2) of applying the radiation-sensitive composition to the upper layer of the base film formed by the step (β1);
After the step (β2), a step (β3) of sequentially performing each treatment of prebaking, exposure, and development on the radiation-sensitive composition;
The method for treating a radiation-sensitive composition, wherein the step (α) is performed after the step (β3).
상기 다른 라디칼 중합성 화합물 (c)가, 지환식 구조를 갖는 (메타)아크릴산 에스테르, 방향환 구조를 갖는 (메타)아크릴산 에스테르, 방향족 비닐 화합물, N-치환 말레이미드 화합물, 및 복소환 구조를 갖는 비닐 화합물로 이루어지는 군에서 선택되는 적어도 1종의 단량체에서 유래하는 구조 단위인 것을 특징으로 하는 감방사선성 조성물의 처리 방법.9. The method of claim 8,
The other radically polymerizable compound (c) is a (meth)acrylic acid ester having an alicyclic structure, a (meth)acrylic acid ester having an aromatic ring structure, an aromatic vinyl compound, an N-substituted maleimide compound, and a heterocyclic structure. A method for treating a radiation-sensitive composition, characterized in that it is a structural unit derived from at least one monomer selected from the group consisting of vinyl compounds.
하지막을 성막하는 공정 (β1)과,
상기 공정 (β1)에 의해서 성막된 상기 하지막의 상층에, 상기 감방사선성 조성물을 도포하는 공정 (β2)와,
상기 공정 (β2) 후, 상기 감방사선성 조성물에 대해서, 프리베이크, 노광, 및 현상의 각 처리를 순차적으로 실행하는 공정 (β3)을 갖고,
상기 공정 (α)는, 상기 공정 (β3) 후에 실행되는 것을 특징으로 하는 감방사선성 조성물의 처리 방법.8. The method of claim 7,
a step (β1) of forming an underlying film;
a step (β2) of applying the radiation-sensitive composition to the upper layer of the base film formed by the step (β1);
After the step (β2), a step (β3) of sequentially performing each treatment of prebaking, exposure, and development on the radiation-sensitive composition;
The method for treating a radiation-sensitive composition, wherein the step (α) is performed after the step (β3).
상기 감방사선성 조성물에서 차지하는, 상기 감방사선성 산 생성 화합물 (B)의 비율은, 상기 수지 (A) 100질량부에 대해서 15~30질량부인 것을 특징으로 하는 감방사선성 조성물의 처리 방법.18. The method of claim 17,
The proportion of the radiation-sensitive acid-generating compound (B) in the radiation-sensitive composition is 15 to 30 parts by mass with respect to 100 parts by mass of the resin (A).
하지막을 성막하는 공정 (β1)과,
상기 공정 (β1)에 의해서 성막된 상기 하지막의 상층에, 상기 감방사선성 조성물을 도포하는 공정 (β2)와,
상기 공정 (β2) 후, 상기 감방사선성 조성물에 대해서, 프리베이크, 노광, 및 현상의 각 처리를 순차적으로 실행하는 공정 (β3)을 갖고,
상기 공정 (α)는, 상기 공정 (β3) 후에 실행되는 것을 특징으로 하는 감방사선성 조성물의 처리 방법.9. The method of claim 8,
a step (β1) of forming an underlying film;
a step (β2) of applying the radiation-sensitive composition to the upper layer of the base film formed by the step (β1);
After the step (β2), a step (β3) of sequentially performing each treatment of prebaking, exposure, and development on the radiation-sensitive composition;
The method for treating a radiation-sensitive composition, wherein the step (α) is performed after the step (β3).
하지막을 성막하는 공정 (β1)과,
상기 공정 (β1)에 의해서 성막된 상기 하지막의 상층에, 상기 감방사선성 조성물을 도포하는 공정 (β2)와,
상기 공정 (β2) 후, 상기 감방사선성 조성물에 대해서, 프리베이크, 노광, 및 현상의 각 처리를 순차적으로 실행하는 공정 (β3)을 갖고,
상기 공정 (α)는, 상기 공정 (β3) 후에 실행되는 것을 특징으로 하는 감방사선성 조성물의 처리 방법.17. The method of claim 16,
a step (β1) of forming an underlying film;
a step (β2) of applying the radiation-sensitive composition to the upper layer of the base film formed by the step (β1);
After the step (β2), a step (β3) of sequentially performing each treatment of prebaking, exposure, and development on the radiation-sensitive composition;
The method for treating a radiation-sensitive composition, wherein the step (α) is performed after the step (β3).
하지막을 성막하는 공정 (β1)과,
상기 공정 (β1)에 의해서 성막된 상기 하지막의 상층에, 상기 감방사선성 조성물을 도포하는 공정 (β2)와,
상기 공정 (β2) 후, 상기 감방사선성 조성물에 대해서, 프리베이크, 노광, 및 현상의 각 처리를 순차적으로 실행하는 공정 (β3)을 갖고,
상기 공정 (α)는, 상기 공정 (β3) 후에 실행되는 것을 특징으로 하는 감방사선성 조성물의 처리 방법.10. The method of claim 9,
a step (β1) of forming an underlying film;
a step (β2) of applying the radiation-sensitive composition to the upper layer of the base film formed by the step (β1);
After the step (β2), a step (β3) of sequentially performing each treatment of prebaking, exposure, and development on the radiation-sensitive composition;
The method for treating a radiation-sensitive composition, wherein the step (α) is performed after the step (β3).
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