KR20210053138A - A heater structure configured to improve thermal efficiency in a modulator device - Google Patents

Abstract

Various embodiments of the present disclosure relate to a modulator device including a first waveguide and a heater structure. An input terminal is configured to receive impact light. A first waveguide has a first output area and a first input area coupled to the input terminal. A second waveguide is optically coupled to the first waveguide. The second waveguide has a second output area and a second input area coupled to the input terminal. The output terminal is configured to provide output light is modulated based on the impact light. The output terminal is coupled to the first output area and the second output area. A heater structure overlies the first waveguide. A bottom surface of the heater structure is aligned with a bottom surface of the first waveguide. The first waveguide is laterally spaced between the sidewalls of the heater structure.

Description

A heater structure constructed to improve the thermal efficiency of a modulator device {A HEATER STRUCTURE CONFIGURED TO IMPROVE THERMAL EFFICIENCY IN A MODULATOR DEVICE}

[Reference to related application] This application claims the benefit of U.S. Provisional Application No. 62/927,850, filed on October 30, 2019, the contents of which are incorporated herein by reference as such.

The optical circuit may include multiple photonic functions/devices and optical waveguides. The optical waveguide is configured to confine light and guide it from a first point on an integrated chip (IC) to a second point on the IC with minimal attenuation. The optical waveguide of the modulator device may be configured to selectively change the phase, wavelength, frequency and/or other characteristics of light passing through the optical waveguide.

Aspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It is noted that, according to standard practice in the industry, various features are not drawn to scale. Indeed, the dimensions of the various features may be arbitrarily increased or decreased for clarity of description.
1 is a perspective view of some embodiments of a modulator device including a heater structure at least partially laterally surrounding a waveguide structure.
2A and 2B are cross-sectional views of some embodiments of a waveguide structure spaced laterally between inner sidewalls of the heater structure.
3A to 3C are plan views of some embodiments of a modulator device including a heater structure placed directly on the first waveguide and at least partially laterally surrounding it, wherein the first waveguide is directly connected to the second waveguide. .
4A and 4B are plan views of some embodiments of a modulator device including a heater structure that lies directly over a first waveguide and at least partially laterally surrounds it, wherein the first waveguide is laterally offset from the second waveguide. Top view.
5 is a cross-sectional view of some embodiments of an integrated chip including a modulator device, a grating structure, and a photodiode disposed over a substrate.
6-12 are cross-sectional views of some embodiments of a method for forming a modulator device comprising a heater structure and a first waveguide, wherein the heater structure lies directly over the first waveguide and at least partially laterally surrounds it. .
13 is a flow diagram of some embodiments corresponding to the method of FIGS. 6-12.

The following disclosure provides a number of different embodiments or examples for implementing different features of the provided subject matter. Specific examples of components and devices are described below to simplify the present disclosure. These are of course only examples and are not intended to be limiting. For example, in the description that follows, the formation of a first feature on or on a second feature may include an embodiment in which the first and second features are formed in direct contact, and the additional features are formed by first and second features. An embodiment may also be included in which the first and second features may not be in direct contact, such that they may be formed between the two features. In addition, the present disclosure may repeat figures and/or letters in various examples. This repetition is for simplicity and clarity, and does not in itself dictate the relationship between the various embodiments and/or the described configurations.

In addition, spatially relative terms such as "bottom", "bottom", "bottom", "top", "top", etc., as shown in the figure, refer to one element for another element(s) or feature(s) or It may be used herein for ease of description to describe the relationship of features. Spatial relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientations shown in the figures. The device may be oriented in a different way (rotated 90 degrees or in a different orientation), and the spatial relative descriptors used herein may likewise be interpreted accordingly.

In electronics and communications, modulation is the process of changing one or more characteristics of a periodic waveform in a way that allows information to be transmitted from a transmitter to a receiver. For example, amplitude modulation (AM), frequency modulation (FM), and phase modulation can be used to convey information over long or short distances by modulating a periodic waveform.

The modulator device may comprise an input terminal and an output terminal. The first waveguide and the second waveguide may diverge from the input terminal and then recombine at the output terminal, such that there are two paths or channels through which light can travel through the modulator device. The first waveguide may be in close proximity or direct contact with the second waveguide, so that the first and second waveguides are optically coupled to each other. During operation of the modulator device, the input light is received at the input terminal in an initial phase and is then recombined to be split to pass along the first waveguide and the second waveguide before being provided as output light at the output terminal. Since the first and second waveguides are optically coupled together, the output light may be phase shifted due to constructive or destructive interference arising from the first and second waveguides.

The heater structure may be arranged above, below and/or side by side the first waveguide to generate heat and apply it to the first waveguide. This heat can induce a temperature change in the first waveguide, which temperature change in turn changes the refractive index, carrier mobility and/or other properties of the first waveguide relative to that of the second waveguide. Accordingly, the speed and/or phase of light traveling through the first waveguide can be shifted with respect to that of light traveling through the second waveguide, so that the temperature of the heater structure can control the phase shift applied to the emitted light at the output terminal. There will be. Thus, the modulator device can control the temperature of the heater structure such that the input light is modulated to provide output light corresponding to the various data states to which the modulation is to be transmitted. However, the heater structure may be overlying the first waveguide, so that the bottom surface of the heater structure is vertically offset from the upper surface of the first waveguide by a non-zero distance. A dielectric material is disposed between the heater structure and the first waveguide. Further, heat may be radiated from the heater structure in all directions, such that the heat is not concentrated toward the first waveguide and the thermal efficiency of the modulator device is reduced. To account for heat radiation in all directions, the amount of power delivered to the heater structure may be increased to compensate for the power radiated from the first waveguide (and thereby increase the heat generated by the heater structure). This may in turn increase the power consumption of the modulator device and further reduce the thermal efficiency of the modulator device.

Various embodiments of the present application are directed to a modulator device comprising a heater structure overlying a waveguide structure and at least partially laterally surrounding it. For example, a modulator device includes an interconnecting dielectric structure overlying a waveguide structure. The heater structure is disposed within the interconnect dielectric structure and overlies the waveguide structure. The heater structure may include an upper conductor and a heater pillar structure. The upper conductor lies directly over the waveguide structure and is vertically offset from the waveguide structure by the interconnect dielectric structure. The heater column structure lies under the upper conductor and extends from the upper conductor to a point below the upper surface of the waveguide structure. The waveguide structure is laterally spaced between the inner sidewalls of the heater pillar structure, so that the heater structure is placed directly on the waveguide structure to at least partially surround the waveguide structure laterally. The heater structure is configured to concentrate heat toward the waveguide structure, so that the heat generated by the heater structure may control a phase shift of light passing through the waveguide structure. Since the waveguide structure is laterally spaced between the inner sidewalls of the heater structure, heat may be radiated more directly toward the waveguide structure. This may, in part, increase the thermal efficiency of the modulator device and may reduce the power consumption of the modulator device.

1 shows a perspective view of some embodiments of a modulator device 100 including a first waveguide 112 spaced laterally between inner sidewalls of a heater structure 111.

The modulator device 100 comprises an input terminal 101 and an output terminal 103. The first waveguide 112 and the second waveguide 115 diverge from the input terminal 101 and then recombine at the output terminal 103, whereby the two paths through which light can travel through the modulator device 100 Or provide a channel. In some embodiments, the first and second waveguides 112 and 115 branch symmetrically between the input terminal 101 and the output terminal 103. The first waveguide 112 may be in close proximity or direct contact with the second waveguide 115 so that the first and second waveguides 112 and 115 are optically coupled to each other. In some embodiments, the first waveguide 112 has a first input region 112i coupled to the input terminal 101 and a first output region 112o coupled to the output terminal 103. Further, the second waveguide 115 has a second input region 115i coupled to the input terminal 101 and a second output region 115o coupled to the output terminal 103. In some embodiments, the first waveguide 112 may include a semiconductor material (eg, silicon), and may have an active region including a first doped region 112a and a second doped region 112b. In some embodiments, the first doped region 112a includes a first doping type (e.g., p-type), and the second doped region 112b has a second doping type opposite to the first doping type ( For example, n-type). In another embodiment, the first doping type is n-type, the second doping type is p-type, or vice versa.

The heater structure 111 overlies the active region of the first waveguide 112. In some embodiments, the heater structure 111 includes an upper conductor 110 and a heater column structure 108. The upper conductor 110 lies directly on the first and second doped regions 112a and 112b. The heater column structure 108 continuously extends from a lower surface of the upper conductor 110 to a point below the upper surface of the first waveguide 112. In addition, the active region of the first waveguide 112 is laterally spaced between the inner sidewalls of the heater pillar structure 108, so that the heater structure 111 at least partially surrounds the first waveguide 112 in the lateral direction. It becomes cheaper. In some embodiments, the bottom surface of the heater column structure 108 is aligned with the bottom surface of the first waveguide 112. Moreover, the upper conductor 110 and the heater column structure 108 comprise one or more materials having high thermal conductivity. For example, an interconnect dielectric structure (not shown) may be disposed around the first waveguide 112 and the heater structure 111, wherein at least one material of the heater structure 111 comprises an interconnect dielectric structure. It has a higher thermal conductivity than the material(s) to be constructed.

In some embodiments, during operation of the modulator device 100, before the impinging light 107 is received at the input terminal 101 in its initial phase and then recombined and provided as the exit light 109 at the output terminal 103. , Divided to pass along the first waveguide 112 and the second waveguide 115. Since the first waveguide 112 and the second waveguide 115 are optically coupled, the outgoing light 109 may be phase shifted due to constructive or destructive interference generated from the first and second waveguides 112 and 115. have. In some embodiments, the heater structure 111 is configured to generate heat and apply it to the active region of the first waveguide 112. The heat generated by the heater structure 111 may induce a temperature change of the first waveguide, and this temperature change is then the refractive index of the first waveguide 112 and the carrier mobility of the second waveguide 115. And/or change other properties. Accordingly, the speed and/or phase of light traveling through the first waveguide 112 can be shifted relative to that of light traveling through the second waveguide 115, so that the temperature of the heater structure 111 is changed to the output terminal 103. It is possible to control the phase shift applied to the outgoing light 109 in FIG. Further, the modulator device 100 is configured to control the temperature of the heat generated by the heater structure 111 within the time based on the state of the data to be transmitted within the time, so that the impinging light 107 is in various data states to which the modulation is to be transmitted. Is modulated to provide an outgoing light corresponding to. Although a modulation example using phase modulation has been described above, it will be appreciated that in other embodiments, other types of modulation may also be used, such as amplitude modulation or frequency modulation, for example.

By the heater structure 111 placed directly on the active region of the first waveguide 112 and at least partially laterally surrounding it, the heater structure 111 transfers heat to the first and second doped regions 112a and 112b. You can also aim towards it. This may then reduce the amount of heat that may be radiated and/or absorbed towards adjacent structures and/or dielectric material, thereby increasing the thermal efficiency of modulator device 100. Further, the heater structure 111 comprises one or more materials having high thermal conductivity, thereby increasing the thermal efficiency of the modulator device 100. Accordingly, the heater structure 111 may reduce the power consumption of the modulator device 100 and increase the thermal efficiency of the modulator device 100.

2A shows a cross-sectional view of some embodiments of a modulator device 200a having a heater structure 111 having an upper conductor 110 and a heater column structure 108.

In some embodiments, modulator device 200a includes a first waveguide 112 overlying a substrate 202. A bulk dielectric structure 204 is arranged over the substrate 202 and may be spaced apart between the first waveguide 112 and the substrate 202. A lower inter-level dielectric (ILD) structure 206 overlies the bulk dielectric structure 204. In some embodiments, the first waveguide 112 is arranged directly over the bulk dielectric structure 204 and the lower ILD structure 206 laterally surrounds the first waveguide 112. In some embodiments, bulk dielectric structure 204 may be an oxide such as, for example, silicon dioxide, other suitable oxide, low-k dielectric material, any combination of the above, or other suitable dielectric material, or It can also be included. In other embodiments, the lower ILD structure 206 is, for example, silicon nitride, silicon carbide, silicon oxide, low-k dielectric material, ultra-low-k dielectric material, any combination of the above, or other suitable dielectric material. It may or may include them. In some embodiments, the substrate 202 may be or include a semiconductor body, such as, for example, single crystal silicon, a silicon-on-insulator (SOI) substrate, or other suitable semiconductor substrate material. May be. In various embodiments, substrate 202 and first waveguide 112 comprise the same material (eg, silicon).

In some embodiments, the first waveguide 112 includes a semiconductor material (eg, silicon) configured to transmit light. The first waveguide 112 may have a first doped region 112a and a second doped region 112b adjacent to each other and spaced apart laterally. In some embodiments, the first doped region 112a includes a first doping type (e.g., p-type), and the second doped region 112b has a second doping type opposite to the first doping type ( For example, n-type). In another embodiment, the first doping type is p-type, the second doping type is n-type, or vice versa. In yet another embodiment, the first and/or second doped regions 112a, 112b are one or more conductive vias and/or wires (shown as shown) disposed within the lower ILD structure 206 and/or the upper ILD structure 214. Not) is electrically coupled. In various embodiments, in order to change the phase of light traveling through the active region of the first waveguide 112, the first waveguide 112 is provided through a conductive via and/or a wire (not shown) in a first direction. A bias is applied across the first doped region 112a and the second doped region 112b. In this embodiment, the light travels in a second direction perpendicular to the first direction.

The heater structure 111 overlies the first waveguide 112 and is disposed within the lower ILD structure 206 and/or the upper ILD structure 214. In some embodiments, the heater structure 111 includes an upper conductor 110 and a heater column structure 108. The heater column structure 108 continuously extends from the lower surface of the upper conductor 110 to the upper surface of the bulk dielectric structure 204. In addition, the first waveguide 112 is laterally spaced apart between inner sidewalls of the heater pillar structure 108. In various embodiments, the heater column structure 108 includes a lower column structure 208 and an upper column structure 209 overlying the lower column structure 208. In some embodiments, the lower pillar structure 208 may or may include a semiconductor substrate material, silicon, intrinsic silicon, p-doped silicon, n-doped silicon, polysilicon, or other suitable material, for example. have. In another embodiment, the lower pillar structure 208 includes the same material (eg, silicon) as the first waveguide 112. In addition, in some embodiments, the bottom surface of the lower pillar structure 208 is aligned with the bottom surface of the first waveguide 112, and the top surface of the lower pillar structure 208 is the top surface of the first waveguide 112. Is aligned with. The upper pillar structure 209 continuously extends from the upper conductor 110 to the lower pillar structure 208. In some embodiments, the upper pillar structure 209 includes a heater via 210 and a heater wire 212 overlying the heater via 210. The conductive via 216 overlies the upper conductor 110 and is electrically coupled to the heater structure 111. In some embodiments, the conductive vias 216, heater vias 210, and/or heater wires 212 may each be, or include, for example, tungsten, aluminum, copper, any combination of the foregoing, or the like. May be. In yet another embodiment, the upper conductor 110 may be or may include, for example, titanium, tantalum, titanium nitride, tantalum nitride, any combination of the above, or the like.

에 의해 제1 도파로(112)의 온도 변화에 의존하는데, 여기서

는 제1 도파로(112)의 재료의 열광학 계수이고, ΔT는 제1 도파로(112)의 온도 변화이고, L은 히터 구조체(111)에 노출될 때 광이 진행하는 길이이고, λ는 광의 파장이다. 예를 들어, 몇몇 실시예에서, 제1 도파로(112)는 켈빈(Kelvin)당 약 1.86×10^-4의 열광학 계수를 갖는 실리콘을 포함하는데, 이는 실리콘의 굴절률이 매 6 켈빈(또는 섭씨 6도) 온도 변화마다 1.1×10^-3만큼 변화한다는 것을 지시한다.In addition, upon application of a suitable signal (e.g., voltage, current, etc.), the heater structure 111 is one or more materials that generate heat, as illustrated by an exemplary heat wave 220. Includes. The heater structure 111 is configured to apply heat to the first waveguide 112 to change the refractive index of the first waveguide 112, thereby changing the phase of light when traveling through the active region of the first waveguide 112 Let it. During operation, the change in the phase of the light is given by the following equation:

Depends on the temperature change of the first waveguide 112 by

Is the thermal optical coefficient of the material of the first waveguide 112, ΔT is the temperature change of the first waveguide 112, L is the length of the light traveling when exposed to the heater structure 111, and λ is the wavelength of the light to be. For example, in some embodiments, the first waveguide 112 comprises ^{silicon having a thermooptic coefficient of about 1.86×10 −4} per Kelvin, which means that the refractive index of silicon is every 6 Kelvin (or 6 degrees Celsius). Fig.) It indicates that it changes by 1.1×10 ^{-3 for each temperature change.}

Heat may be conducted from the upper conductor 110 to the upper pillar structure 209 and the lower pillar structure 208 by the upper conductor 110 overlying the heater pillar structure 108. Since the upper pillar structure 209 and the lower pillar structure 208 are closer to the first waveguide 112 than the upper conductor 110, heat may be more effectively directed to the first waveguide 112. This may in turn increase the thermal efficiency of the modulator device 100 and reduce the power consumption of the modulator device 100. In addition, by the upper conductor 110 lying directly above the first waveguide 112 and the heater column structure 108 at least partially laterally surrounding the first waveguide 112, the heater structure 111 is an exemplary The heat wave 220 may be constrained to a region around the active region of the first waveguide 112 (eg, first and/or second doped regions 112a and 112b). This may prevent the exemplary heat wave 220 from being radiated to other devices and/or structures disposed over the substrate 202, thereby further increasing the thermal efficiency of the modulator device 100. In addition, this may further reduce the power consumption of the modulator device 100.

In addition, the heater structure 111 may include a material(s) having a higher thermal conductivity than the surrounding dielectric material(s) and/or the structure(s), so that the heater structure 111 effectively generates heat to generate the first It may be directed toward the active area of the waveguide 112. In some embodiments, the lower pillar structure 208 includes a first material(s) having a first thermal conductivity (eg, intrinsic silicon), and the upper pillar structure 209 has a second thermal conductivity. 2 material(s) (e.g., aluminum, copper, tungsten, any combination of the above, etc.), and the upper conductor 110 is a third material(s) having a third thermal conductivity (e.g. For example, titanium nitride, tantalum nitride, titanium, etc.), and the lower ILD structure 206 and/or the upper ILD structure 214 is a dielectric material(s) having a fourth thermal conductivity (e.g., silicon Oxides, low-k dielectric materials, silicon carbides, combinations of the above, etc.). The fourth thermal conductivity is smaller than each of the first thermal conductivity, the second thermal conductivity, and the third thermal conductivity, so that the heat generated by the heater structure 111 is effectively conducted from the upper conductor 110 to the heater column structure 108 It could be. Since the heater column structure 108 is closer to the first waveguide 112 than the upper conductor 110, heat may be more easily directed toward the first waveguide 112. Accordingly, the heater structure 111 may conduct heat toward the first waveguide 112 more easily than the lower ILD structure 206 and/or the upper ILD structure 214 is spaced apart from the first waveguide 112 It can also conduct heat. This may in turn also increase the thermal efficiency of the modulator device 200a and reduce the power consumption of the modulator device 200a.

In some embodiments, the first thermal conductivity of the lower pillar structure 208 may be within a range of about 150 watts per Kelvin [W/(m*K)] or about 125 to 175 W/(m*K). . In some embodiments, the second thermal conductivity of the upper column structure 209 is about 225 W/(m*K), about 400 W/(m*K), or about 210 to 420 W/(m*k). It may be within range. Accordingly, in some embodiments, the first thermal conductivity of the lower pillar structure 208 may be less than the second thermal conductivity of the upper pillar structure 209. In some embodiments, the third thermal conductivity of the upper conductor 110 is about 12 W/(m*K), about 12 W/(m*K), about 60 W/(m*K), or about 10 It may be within the range of to 100 W/(m*K). In another embodiment, the dielectric layer(s) and/or structure(s) surrounding the heater structure 111 and/or the first waveguide 112 (e.g., the lower ILD structure 206 and/or the upper ILD structure (214)] may be within the range of about 1 W/(m*K), about 5 W/(m*K), or about 0.5 to 50 W/(m*K).

2B shows a cross-sectional view of some embodiments of a modulator device 200b including a heater structure 111 overlying and at least partially laterally surrounding the first waveguide 112.

In some embodiments, the first waveguide 112 includes a substrate material (eg, silicon), and includes a first doped region 112a, a second doped region 112b, and first and second doped regions 112a. , 112b) and a central undoped region 112c disposed laterally. The first doped region 112a may include, for example, a first doping type (e.g., n-type), and the second doped region 112b is, for example, opposite to the first doping type. It may also include a second doping type (eg, p-type). In other embodiments, the central undoped region 112c may be or may include intrinsic silicon. In some embodiments, the first and second doped regions 112a and 112b may have uppermost surfaces disposed below the uppermost surface of the central undoped region 112c. In some embodiments, the first and second doped regions 112a and 112b are electrically coupled directly to one or more conductive vias and/or wires (not shown). In this embodiment, a bias may be applied across the first and second doped regions 112a and 112b in the first direction in order to change the phase of light traveling through the active region of the first waveguide 112, Here, the light travels in a second direction perpendicular to the first direction. In another embodiment, the top surface of the lower column structure 208 is aligned with the top surface of the central undoped region 112c.

3A shows a top view 300a of some embodiments of a modulator device including a heater structure 111 that lies directly above the first waveguide 112 and at least partially laterally surrounds it, wherein the first waveguide 112 Is directly connected to the second waveguide 115. In some embodiments, the top view 300a of FIG. 3A corresponds to some alternative embodiments of the modulator device 200a of FIG. 2A taken along line A-A' of FIG. 2A. In another embodiment, the cross-sectional view of FIG. 2A may be taken from line B-B' of FIG. 3A.

The active region 302 of the first waveguide 112 may include at least a portion of the first and second doped regions 112a and 112b of the first waveguide 112 and the heater structure 111. In some embodiments, the active region 302 of the first waveguide 112 resembles a curved rectangular structure when viewed from above. The active region 302 may be continuously connected to the non-active region 304 of the first waveguide 112. In some embodiments, the inactive region 304 of the first waveguide 112 may be, or may include, for example, undoped silicon, intrinsic silicon, or the like. In another embodiment, the second waveguide 115 is in direct contact with the first waveguide 112, for example, using the same material (e.g., intrinsic silicon) as the inactive region 304 of the first waveguide 112. It can also be included. Accordingly, the first waveguide 112 is optically coupled to the second waveguide 115. Further, the heater structure 111 overlies the active region 302 and is configured to generate heat and direct it to the active region 302 of the first waveguide 112. The heater structure 111 includes the upper conductor 110 and the heater column structure 108 so that the active region 302 of the first waveguide 112 is laterally positioned between the sidewalls of the heater column structure 108. Will be spaced apart. This, in part, makes it easier for the heater structure 111 to generate heat and constrain it to the active region 302, so that the heat may affect the phase of light traveling through the first waveguide 112. In some embodiments, the upper conductor 110 and/or the heater column structure 108 each have a curved rectangular structure that conforms to the shape of the active region 302 of the first waveguide 112. Accordingly, the heater structure 111 is configured to generate heat and constrain it to the active region 302 of the first waveguide 112, thereby increasing the thermal efficiency of the modulator device and reducing the power consumption of the modulator device.

3B shows a top view 300b of some embodiments of a modulator device including a heater structure 111 that lies directly above the first waveguide 112 and at least partially laterally surrounds it, wherein the first waveguide 112 Is directly connected to the second waveguide 115. In some embodiments, top view 300b of FIG. 3B corresponds to some alternative embodiments of modulator device 200a of FIG. 2A taken along line A-A' of FIG. 2A. In another embodiment, the cross-sectional view of FIG. 2A may be taken from line B-B' of FIG. 3A.

As shown in the plan view 300b of FIG. 3B, when viewed from above, the upper conductor 110 and the heater column structure 108 have a curved rectangular shape of the active region 302 of the first waveguide 112. Each has a rectangular shape different from and. Thus, the heater structure 111 is placed on the active region 302 and at least partially laterally surrounds it, so that the heater structure 111 is configured to constrain heat to the active region 302 of the first waveguide 112. do.

3C shows a plan view 300c of some embodiments of a modulator device including a heater structure 111 and a first waveguide 112, wherein the first waveguide 112 is directly connected to the second waveguide 115 have. In some embodiments, top view 300c of FIG. 3C corresponds to some alternative embodiments of modulator device 200b of FIG. 2B taken along line A-A' of FIG. 2B. In another embodiment, the cross-sectional view of FIG. 2B may be taken from line B-B' of FIG. 3C.

The central undoped region 112c of the first waveguide 112 is interposed laterally between the first and second doped regions 112a and 112b of the first waveguide 112. Accordingly, the active region 302 includes a central undoped region 112c, a first doped region 112a, and a second doped region 112b. The upper conductor 110 of the heater structure 111 overlies the active region 302 of the first waveguide 112. In addition, the active region 302 of the first waveguide 112 is laterally spaced apart between inner sidewalls of the heater pillar structure 108.

FIG. 4A shows a top view 400a of some embodiments of a modulator device including a heater structure 111 overlying the first waveguide 112, wherein the first waveguide 112 is from the second waveguide 115. It is laterally offset. In some embodiments, top view 400a of FIG. 4A corresponds to some alternative embodiments of modulator device 200b of FIG. 2B taken along line A-A' of FIG. 2B. In another embodiment, the cross-sectional view of FIG. 2B may be taken from line B-B' of FIG. 4A. Further, the plan view 400a may correspond to some alternative embodiments of the modulator device 200a of FIG. 2A taken along line A-A' of FIG. 2A, where the central undoped region 112c is omitted and the first The first doped region 112a directly contacts the second doped region 112b (not shown). In this embodiment, the cross-sectional view of FIG. 2A may be taken from line B-B' of FIG. 4A.

In some embodiments, when viewed from above, the first waveguide 112 is similar to a ring-shaped structure. The active region 302 of the first waveguide may include a heater structure 111, a first doped region 112a, a second doped region 112b, and a central undoped region 112c. The active region 302 may be continuously connected to the non-active region 304 of the first waveguide 112. The inactive region 304 may also include a central undoped region 112c. In addition, the second waveguide 115 is disposed next to the first waveguide 112 in the lateral direction. In some embodiments, the second waveguide 115 includes the same material as the central undoped region 112c of the first waveguide 112. In some embodiments, the second waveguide 115 may be substantially linear such that the input terminal 101, the second waveguide 115, and the output terminal 103 are collinear along a line in a plane. In another embodiment, the second waveguide may include some curves (not shown). The second waveguide 115 is configured to confine and transmit light. The second waveguide 115 is laterally arranged next to the first waveguide 112. In some embodiments, the first and second waveguides 112 and 115 are arranged close enough to each other so that they do not directly contact each other, but the first and second waveguides 112 and 115 are optically coupled to each other. In this embodiment, the first waveguide 112 is laterally offset from the second waveguide 115 by a non-zero distance. In some embodiments, the non-active region 304 of the first waveguide 112 is a portion of the first waveguide 112 closest to the second waveguide 115. Accordingly, the heater structure 111 does not interfere with the direct optical coupling between the inactive region 304 of the first waveguide 112 and the second waveguide 115.

As shown in the plan view 400a of FIG. 4A, the heater structure 111 has an arcuate shape matching the ring shape of the first waveguide 112. In addition, in the active region 302 of the first waveguide 112, the first doped region 112a, the second doped region 112b, and the central undoped region 112c are sidewalls of the heater column structure 108. Are spaced laterally between them. This partially allows the heater structure 111 to direct heat to the active region 302 of the first waveguide and constrain it, thereby minimizing heat that may affect the transmission of light through the second waveguide 115 Let it.

4B shows a top view 400b of some embodiments of an exemplary optical path through a modulator device having a heater structure 111 disposed within and/or around an active region 302 of the first waveguide 112. have.

In some embodiments, during operation of the modulator device, light having a first phase travels through the first exemplary optical path 402 along the second waveguide 115. In the first exemplary optical path 402, since the first and second waveguides 112 and 115 are optically coupled together, the non-active area 304 of the first waveguide 112 through the first input area 112i You can also proceed within. Light may then enter the second exemplary optical path 404, where the voltage is a first terminal coupled to the first doped region 112a and the second doped region 112b, respectively, of the first waveguide 112 It may be selectively applied across (Vf) and the second terminal (Vs). In addition, when the light travels through the second exemplary optical path 404, the heater voltage may be selectively applied to the heater terminal Vh coupled to the heater structure 111, so that the light is transmitted to the first waveguide 112 It changes from the first phase to the second phase while in the active region 302 of. As the light travels along the second exemplary optical path 404, the heater structure 111 may direct and/or constrain heat to the active region 302 of the first waveguide 112, such that the first The phase may be accurately and efficiently changed to the second phase. After passing through the active region 302 of the first waveguide 112, the light in the second exemplary optical path 404 then passes through the first output region 112o to the non-active region 304 of the first waveguide 112. ) May be combined with the first exemplary optical path 402. Thereafter, in some embodiments, after exiting through the first output area 112o, the light may enter a third exemplary optical path 406, where the light is the first and second exemplary optical paths. It has a third phase due to constructive and/or destructive interference between the light traveling through (402, 404). Thus, when the active region 302 of the first waveguide 112 is in the "on" state (i.e., the voltage is applied to Vf, Vs and/or Vh), the light is used to transmit digital data through the optical signal. It may be selectively changed or modulated according to the voltage applied to Vf, Vs, and/or Vh from the first phase to the third phase.

3A, 3B, 3C, 4A and 4B, the lower ILD structure (206 in FIG. 2A or 2B) and/or the upper ILD structure (214 in FIG. 2A or 2B) as in FIG. 2A or Multiple structures and/or layers from the modulator device 200a or 200b of FIG. 2B are omitted in FIGS. 3A, 3B, 3C, 4A and 4B for ease of illustration. In addition, the upper conductor 110 of the heater structure 111 is shown in Figs. 3a, 3b, 3c, and so on to more easily illustrate the position/layout of layers and/or structures lying under the upper conductor 110. It is at least partially transparent in 4a and 4b.

5 shows a cross-sectional view of some embodiments of an integrated chip 500 including a modulator device 505 disposed next to a photodiode 502 and overlying a substrate 202. In some embodiments, modulator device 505 is configured as modulator device 200a or 200b of FIG. 2A or 2B.

A grating structure 501 overlies the substrate 202 so that a photodiode 502 is laterally disposed between the modulator device 505 and the grating structure 501. The modulator device 505 includes a heater structure 111 and a first waveguide 112. The grating structure 501 may be coupled to a light source, and may direct light from the light source into one or more other devices (e.g., photodiode 502, modulator device 505, etc.) overlying the substrate 202. have. The photodiode 502 may be configured to receive light and transmit the light as a digital signal. In some embodiments, one or more photodiodes 502 may be coupled to the first waveguide 112 and/or the second waveguide (115 in FIGS. 2A or 2B ). The photodiode 502 and/or the grid structure 501 are each laterally offset from the heater structure 111, so that the heat generated by the heater structure 111 is transferred to the photodiode 502 and/or the grid structure 501 ). In addition, heat may be constrained to the active region of the first waveguide 112 by the material constituting the heater structure 111 and/or the shape of the heater structure 111.

The photodiode 502 may be disposed within the lower ILD structure 206 in direct contact with the bulk dielectric structure 204. The photodiode 502 may include a semiconductor material, a photodiode p-type side 502a, a photodiode n-type side 502b, and a photodiode undoped central portion disposed on the photodiode contact layer 502f. (502c). In some embodiments, the photodiode p+ portion 502d may be arranged over the photodiode p-type side 502a, and the photodiode n+ portion 502e may be arranged over the photodiode n-type side 502b. . The photodiode p+ portion 502d and the photodiode n+ portion may each be coupled to a conductive via 518. A first photodiode insulator layer 502h may be arranged on the photodiode undoped central portion 502c, and a sidewall spacer structure 502g laterally surrounds the first photodiode insulator layer 502h. In some embodiments, the photodiode p-type side 502a, the photodiode n-type side 502b, and the photodiode undoped central portion 502c may include a different semiconductor material than the first waveguide 112. . In some embodiments, the first waveguide 112 may comprise silicon, while the photodiode p-type side 502a, the photodiode n-type side 502b, and the photodiode undoped central portion 502c are Each may contain germanium.

In some embodiments, a plurality of conductive vias 518 and a plurality of conductive wires 520 are disposed within an interconnect structure overlying the substrate 202. The plurality of conductive vias and wires 518 and 520 are configured to electrically couple a semiconductor device overlying the substrate 202 to each other. In another embodiment, the conductive via 518 is in contact with and/or electrically coupled to the first doped region 112a of the first waveguide 112, and the conductive via 518 is a first waveguide 112. 2 is in contact with and/or electrically coupled to the doped region 112b. Accordingly, a signal (eg, voltage, current, etc.) may be applied across the first waveguide 112 through the conductive via 518 and/or the conductive wire 520.

A plurality of conductive vias and/or wires 518, 520 are disposed within a plurality of dielectric layers overlying the substrate. For example, the plurality of dielectric layers include a first dielectric layer 503 and a second dielectric layer 504 overlying the lower ILD structure 206. In some embodiments, the first and second dielectric layers 503 and 504 may be configured to protect the photodiode 502, for example, and may be silicon carbide, silicon nitride, silicon dioxide, or the like, respectively. have. A third dielectric layer 506 overlies the second dielectric layer 504 and may be or may include an oxide such as silicon dioxide, a low-k dielectric material, silicon oxynitride, or the like. A lower etch stop layer 508 overlies the third dielectric layer 506. In some embodiments, the lower etch stop layer 508 may or may include silicon nitride, silicon carbide, or the like, for example. An interlayer dielectric (ILD) layer 509 overlies the lower etch stop layer 508. In other embodiments, the ILD layer 509 may or may include silicon dioxide, other oxides, low-k dielectric materials, ultra-low-k dielectric materials, and the like, for example. A top etch stop layer 510 overlies the ILD layer 509. In other embodiments, the top etch stop layer 510 may or may include silicon nitride, silicon carbide, silicon oxycarbide, or other suitable dielectric material, for example. A fourth dielectric layer 512 overlies the upper etch stop layer 510. In some embodiments, fourth dielectric layer 512 may be, or may include, tetraethyl-ososilicate (TEOS) or other suitable dielectric material, for example. In addition, the first passivation layer 522 and the second passivation layer 524 are disposed on the upper etch stop layer 510. In some embodiments, the first passivation layer 522 may be, or may include, for example, undoped silicate glass, or other suitable dielectric material. In other embodiments, the second passivation layer 524 may be, or may include silicon nitride, silicon carbide, or the like, for example. In some embodiments, the bond pad 530 is overlying the plurality of conductive vias 518 and the plurality of conductive wires 520, so that the bond pad 530 passes through the conductive vias and wires 518 and 520 to the photodiode 502. ) Is electrically coupled. The bond pad 530 may be configured to electrically couple a semiconductor device disposed over the substrate 202 to another integrated chip (not shown).

In some embodiments, the upper conductor 110 of the heater structure 111 is disposed along the top surface of the ILD layer 509 overlying the lower etch stop layer 508. Further, the heater wire 212 of the heater column structure 108 is laterally surrounded by an ILD layer 509 and a lower etch stop layer 508. Moreover, in some embodiments, the bottom and top surfaces of the heater wire 212 are aligned with the bottom and top surfaces of the conductive wires 520 disposed within the lowest layer of the plurality of conductive wires 520, respectively. In some embodiments, the lowermost layer of the plurality of conductive wires 520 is formed simultaneously with the heater wires 212 by, for example, a single damascene process or a dual damascene process. In addition, the heater via 210 extends from the heater wire 212 to the lower pillar structure 208 through the first, second, and third dielectric layers 503, 504, and 506. In some embodiments, the bottom and top surfaces of the heater vias 210 are respectively aligned with the bottom and top surfaces of the conductive vias 518 disposed in the lowermost layer of the plurality of conductive vias 518. In some embodiments, the lowermost layer of the plurality of conductive vias 518 is formed concurrently with the heater vias 210 by, for example, a single damascene process or a dual damascene process. In some embodiments, conductive vias 518 and heater vias 210 may be of the same material, or may include, for example, copper, aluminum, tungsten, any combination of the above, and the like. In other embodiments, the conductive wire 520 and the heater wire 212 may be the same material or may include the same material, such as copper, aluminum, tungsten, any combination of the above, and the like.

6-12 illustrate cross-sectional views 600-1200 of some embodiments of a method for forming a modulator device having a heater structure overlying and at least partially laterally surrounding a waveguide structure in accordance with the present disclosure. Although the cross-sectional views 600 to 1200 shown in FIGS. 6 to 12 are described with reference to the method, it is understood that the structures shown in FIGS. 6 to 12 are not limited to the method, but may be independent from the method. It will be possible. 6 to 12 are described as a series of operations, but these operations are not limited in that the order of operations may be changed in other embodiments, and it will be understood that the disclosed method is also applicable to other structures. will be. In other embodiments, some operations shown and/or described may be omitted in whole or in part.

As shown in cross-sectional view 600 of FIG. 6, a semiconductor substrate structure 604 is provided. In some embodiments, the semiconductor substrate structure 604 may be or may include a silicon-on-insulator (SOI) substrate, for example. The semiconductor substrate structure 604 may include a substrate 202, a bulk dielectric structure 204, and a device layer 602. The bulk dielectric structure 204 is disposed between the device layer 602 and the substrate 202. In another embodiment, the bulk dielectric structure 204 is formed over the substrate 202 and the device layer 602 is formed over the bulk dielectric structure 204. In some embodiments, the bulk dielectric structure 204 may be or may include an oxide or other suitable dielectric material such as silicon dioxide, for example. In other embodiments, the substrate 202 and/or the device layer 602 may be, or may include, for example, intrinsic silicon, bulk silicon, other suitable bulk substrate material, etc., respectively. In some embodiments, device layer 602 includes the same material as substrate 202.

As shown in cross-sectional view 700 of FIG. 7, the device layer (602 in FIG. 6) is patterned to thereby form the first waveguide 112 and the lower pillar structure 208. In some embodiments, the patterning process also forms a second waveguide (115 in FIGS. 3A-3C or 4A and 4B) optically coupled to the first waveguide 112. In another embodiment, the plan layout of the first waveguide 112 and/or the second waveguide (115 of FIGS. 3A-3C or 4A and 4B) after the patterning process of FIG. 7 is shown in FIGS. 3A-3C or 4A. And the plan views 300a to 300c or 400a to 400b of FIG. 4B. Accordingly, in some embodiments, the first waveguide 112, the second waveguide (115 of FIGS. 3A to 3C or 4A and 4B) and the lower pillar structure 208 are formed at the same time. In addition, the first waveguide 112 is formed in this way that is spaced laterally between the inner sidewalls of the lower pillar structure 208. In some embodiments, the patterning process includes forming a masking layer (not shown) over the device layer (602 in FIG. 6); The unmasked regions of the device layer (602 in FIG. 6) are exposed to one or more etchants, whereby the first waveguide 112, the lower pillar structure 208, and the second waveguide (FIGS. 3A-3C or 4A and Forming 115) of FIG. 4B; And performing a removal process to remove the masking layer.

As shown in the cross-sectional view 800 of FIG. 8, an ion implantation process is performed to form a first doped region 112a and a second doped region 112b in the first waveguide 112. Is performed on. In some embodiments, the first doped region 112a includes a first doping type (e.g., p-type), and the second doped region 112b has a second doping type opposite to the first doping type ( For example, n-type). In various embodiments, the first doping type is n-type, the second doping type is p-type, and vice versa. In another embodiment, the ion implantation process includes selectively implanting ions into the first waveguide 112 according to one or more masking layers (not shown). For example, a first selective ion implantation process may be performed to form the first doped region 112a, and a second selective ion implantation process may be performed to form the second doped region 112b. In another embodiment, the ion implantation process is the active region of the first waveguide 112 (e.g., FIGS. 3A-3C) as shown and/or described in FIGS. 3A-3C or 4A-4B. Alternatively, 302 of FIGS. 4A and 4B is formed.

As shown in cross-sectional view 900 of FIG. 9, a stack of dielectric layers 902 is formed over the bulk dielectric structure 204, the first waveguide 112, and the lower pillar structure 208. In some embodiments, the stack of dielectric layers 902 includes a lower interlayer dielectric (ILD) structure 206, a first dielectric layer 503, a second dielectric layer 504, a third dielectric layer 506, and a lower etch stop layer 508. ), and an ILD layer 509. In some embodiments, the layers in the stack of dielectric layer 902 are, for example, physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). , Or may each be deposited by another suitable deposition process. In some embodiments, the first and second dielectric layers 503 and 504 may be, or may include, for example, silicon carbide, silicon nitride, silicon dioxide, or the like, respectively. In another embodiment, the lower ILD structure 206 and/or the third dielectric layer 506 are, for example, silicon nitride, silicon oxynitride, silicon carbide, silicon dioxide, borosilicate glass (BSG), phosphate silicate glass ( PSG), borophosphosilicate glass (BPSG), low-k dielectric material, or other suitable dielectric material, or may include them. In yet another embodiment, the lower etch stop layer 508 may or may include silicon nitride, silicon carbide, or the like, for example. In some embodiments, the ILD layer 509 may be or may be an oxide such as silicon dioxide, a low-k dielectric material, an extremely low-k dielectric material, any combination of the above, or other suitable dielectric material. It can also be included.

As shown in the cross-sectional view 1000 of FIG. 10, the upper pillar structure 209 is formed on the lower pillar structure 208, thereby forming the heater pillar structure 108. The heater pillar structure 108 may include a lower pillar structure 208 and an upper pillar structure 209. In some embodiments, the upper pillar structure 209 includes a heater via 210 and a heater wire 212. In various embodiments, the heater via 210 may be formed in the first, second and third dielectric layers 503, 504, 506 before the lower etch stop layer 508 is deposited over the third dielectric layer 506. . In some embodiments, the heater via 210 may be formed by a single damascene process and/or may be formed concurrently with the bottom layer of the conductive via (518 in FIG. 5). The heater wire 212 is formed in the lower etch stop layer 508 and the ILD layer 509. In some embodiments, the heater wire 212 may be formed by a single damascene process and/or may be formed concurrently with the bottommost layer of the conductive wire (520 in FIG. 5).

In some embodiments, the single damascene process used to form the heater via 210 is to form a masking layer (not shown) over the third dielectric layer 506 before the top etch stop layer 508 is deposited. step; Patterning the first, second, and third dielectric layers 503, 504, and 506 and the lower ILD structure 206, thereby exposing the upper surface of the lower pillar structure 208 and forming a plurality of heater via openings. ; Depositing (eg, by CVD, PVD, sputtering, electroless plating, etc.) a conductive material (eg, copper, aluminum, tungsten, any combination of the above, etc.) within the heater via opening; And performing a planarization process (eg, a chemical mechanical planarization (CMP) process) into the conductive material until it reaches the upper surface of the third dielectric layer 506, thereby forming the heater via 210. It may include a step of doing. In some embodiments, a similar single damascene process may be performed to form the heater wire 212, where the patterning process forms a plurality of heater wire openings in the lower etch stop layer 508 and the ILD layer 509. Then, the upper surface of the heater via 210 is exposed.

In another embodiment, the heater via 210 and the heater wire 212 may be formed at the same time. In this embodiment, the process for forming the upper pillar structure 209 includes forming a masking layer (not shown) over the ILD layer 509; Patterning the stack of dielectric layers 902 according to the masking layer, thereby forming an upper pillar structure opening and exposing the upper surface of the lower pillar structure 208; Depositing a conductive material (eg, tungsten, aluminum, copper, any combination of the above, etc.) within the upper pillar structure opening; And performing a planarization process (e.g., CMP process) into the conductive material until it reaches the upper surface of the ILD layer 509, whereby the upper column structure including the heater via 210 and the heater wire 212. It may also include the step of forming (209).

As shown in the cross-sectional view 1100 of FIG. 11, the upper conductor 110 is formed along the upper surface of the heater wire 212 and the ILD layer 509, thereby forming the heater structure 111. . In some embodiments, the plan layout of the heater structure 111 may correspond to the layout of the heater structure 111 of FIGS. 3A to 3C and FIGS. 4A and 4B, so that the heater structure 111 is the first waveguide 112. It lies directly above the active area of the s and at least partially laterally surrounds it. In various embodiments, the upper conductor 110 is formed in this way that overlies the first waveguide 112 and/or extends continuously laterally between the outer sidewalls of the heater column structure 108. . In some embodiments, the process for forming the upper conductor 110 includes depositing a conductive layer (e.g., titanium nitride, tantalum nitride, titanium, etc.) over the upper surface of the ILD layer 509 (e.g. For example, by CVD, PVD, sputtering, electroplating, etc.); Forming a masking layer (not shown) over the conductive layer; And forming the upper conductor 110 by patterning the conductive layer according to the masking layer.

As shown in cross-sectional view 1200 of FIG. 12, an upper etch stop layer 510 is formed over the upper conductor 110 and the ILD layer 509. In some embodiments, the top etch stop layer 510 may or may include silicon nitride, silicon carbide, or other suitable dielectric material, for example. In addition, the upper etch stop layer 510 may extend along the sidewall and the upper surface of the upper conductor 110. A fourth dielectric layer 512 is formed over the upper etch stop layer 510. In some embodiments, fourth dielectric layer 512 may be or may include tetraethyl orthosilicate (TEOS) or other suitable dielectric material, for example. Moreover, a second ILD layer 1202 is formed over the fourth dielectric layer 512. In some embodiments, top etch stop layer 510, fourth dielectric layer 512 and/or second ILD layer 1202 are each deposited by, for example, PVD, CVD, ALD, or other suitable deposition process. May be. In another embodiment, the second ILD layer 1202 includes the same material as the ILD layer 509.

13 illustrates a method 1300 for forming a modulator device comprising a heater structure that lies directly above an underlying waveguide structure and at least partially laterally surrounds it in accordance with the present disclosure. While method 1300 is shown and/or described as a series of actions or events, it will be appreciated that the method is not limited to the order or actions shown. Thus, in some embodiments, the operations may be performed in a different order than that shown and/or may be performed concurrently. Further, in some embodiments, the illustrated action or event may be subdivided into a number of actions or events, which may be performed at separate times or simultaneously with other actions or sub-actions. In some embodiments, some illustrated actions or events may be omitted, and other non-shown actions or events may be included.

In operation 1302, a first waveguide is formed over the substrate. 7 shows a cross-sectional view 700 corresponding to some embodiments of operation 1302.

In operation 1304, the lower pillar structure is formed on the substrate, so that the first waveguide is laterally spaced apart between the inner sidewalls of the lower pillar structure. 7 shows a cross-sectional view 700 corresponding to some embodiments of operation 1304.

In operation 1306, a dielectric structure is formed over the lower pillar structure and the first waveguide. 9 shows a cross-sectional view 900 corresponding to some embodiments of operation 1306.

In operation 1308, an upper pillar structure is formed within the dielectric structure and another lower pillar structure, thereby forming a heater pillar structure. The first waveguide is laterally spaced apart between inner sidewalls of the heater pillar structure. 10 illustrates a cross-sectional view 1000 corresponding to some embodiments of operation 1308.

In operation 1310, an upper conductor is formed over the heater pillar structure, thereby forming the heater structure. The upper conductor lies directly over the first waveguide and extends laterally continuously between the outer sidewalls of the heater column structure. 11 illustrates a cross-sectional view 1100 corresponding to some embodiments of operation 1310.

Accordingly, in some embodiments, the present disclosure relates to a modulator device comprising a heater structure and a waveguide structure, wherein the heater structure lies directly over the waveguide structure and at least partially laterally surrounds it.

In some embodiments, the present application provides an input terminal configured to receive an impinging light; A first waveguide having a first input area and a first output area, wherein the first input area is coupled to the input terminal; As a second waveguide optically coupled to the first waveguide; A second waveguide, wherein the second waveguide has a second input area and a second output area, and the second input area is coupled to the input terminal; An output terminal configured to provide outgoing light modulated based on the collision light, the output terminal being coupled to a first output area of a first waveguide and a second output area of a second waveguide; And a heater structure disposed on the first waveguide, wherein a bottom surface of the heater structure is aligned with a bottom surface of the first waveguide, and the first waveguide is laterally spaced apart between sidewalls of the heater structure. Provide the device.

In some embodiments, the present application relates to a first waveguide comprising an active region arranged over a substrate and configured to modulate light; A second waveguide arranged over the substrate and optically coupled to the first waveguide; A first dielectric structure arranged over the first and second waveguides; A heater structure embedded in the first dielectric structure and overlying an active region of the first waveguide, the heater structure including an upper conductor overlying the active region of the first waveguide; And a heater column structure continuously extending from the upper conductor to a point below the upper surface of the first waveguide, wherein the first waveguide is located laterally between the inner sidewalls of the heater column structure, and the first waveguide is a non-zero distance It provides a modulator device comprising a heater column structure that is laterally offset from the inner sidewall of the heater column structure.

In some embodiments, the present application provides a method for forming a modulator device, the method comprising: forming a first waveguide over a substrate; Forming a lower pillar structure on a substrate, wherein the first waveguide is laterally spaced apart between inner sidewalls of the lower pillar structure; Depositing a dielectric structure on the first waveguide and the lower pillar structure; Forming an upper pillar structure on the lower pillar structure, wherein the upper pillar structure is buried in the dielectric structure; And forming an upper conductor along the upper surface of the dielectric structure and the upper surface of the upper pillar structure, thereby forming a heater structure, wherein the heater structure includes a lower pillar structure, an upper pillar structure, and an upper conductor, , The upper conductor is overlying the first waveguide.

Above, features of a number of embodiments have been outlined so that those skilled in the art may better understand aspects of the present disclosure. Those skilled in the art should understand that they may immediately use the present disclosure as a basis for designing or modifying other processes and structures to fulfill the same purpose and/or achieve the same advantages of the embodiments introduced herein. do. Those skilled in the art also understand that such equivalent configurations do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and modifications of the present specification without departing from the spirit and scope of the present disclosure. You also have to be aware.

[Example 1] As a modulator device,

An input terminal configured to receive the collision light;

A first waveguide having a first input region and a first output region, the first input region being coupled to the input terminal;

A second waveguide optically coupled to the first waveguide, the second waveguide having a second input region and a second output region, and the second input region coupled to the input terminal;

An output terminal configured to provide emission light modulated based on the collision light, and coupled to a first output area of the first waveguide and a second output area of the second waveguide; And

A heater structure placed on the first waveguide-The bottom surface of the heater structure is aligned with the bottom surface of the first waveguide, and the first waveguide is laterally spaced apart between sidewalls of the heater structure-

Including a modulator device.

[Example 2] In Example 1,

The heater structure,

An upper conductor directly over the first waveguide; And

Heater column structure continuously extending from the lower surface of the upper conductor to a point aligned with the lower surface of the first waveguide

The modulator device comprising a.

[Example 3] In Example 2,

Wherein the lower portion of the heater column structure and the first waveguide comprise the same material.

[Example 4] In Example 2,

Wherein the maximum width of the upper conductor is greater than the maximum width of the heater column structure.

[Example 5] In Example 2,

Wherein the upper conductor comprises a first material and the heater column structure comprises a second material different from the first material.

[Example 6] In Example 2,

The upper conductor is vertically offset from the first waveguide by a non-zero vertical distance, the first waveguide is laterally disposed between inner sidewalls of the heater pillar structure, and the first waveguide is non-zero. Wherein the modulator device is laterally offset from the first waveguide by a lateral distance.

[Example 7] In Example 1,

Wherein the heater structure is U-shaped.

[Example 8] In Example 1,

The first waveguide includes a first doped region and a second doped region in contact with the first doped region, the first doped region includes a first doping type, and the second doped region is the first doped region. And a second doping type opposite to the type.

[Example 9] As a modulator device,

A first waveguide arranged over the substrate and including an active region configured to modulate light;

A second waveguide arranged on the substrate and optically coupled to the first waveguide;

A first dielectric structure arranged over the first and second waveguides; And

A heater structure buried in the first dielectric structure and overlying an active region of the first waveguide

Including,

The heater structure,

An upper conductor disposed directly over the active region of the first waveguide; And

Heater pillar structure continuously extending from the upper conductor to a point below the upper surface of the first waveguide-The first waveguide is located laterally between inner sidewalls of the heater pillar structure, and the first waveguide is 0 It is laterally offset from the inner sidewall of the heater column structure by a distance other than-

The modulator device comprising a.

[Example 10] In Example 9,

Wherein the heater pillar structure includes an upper pillar structure and a lower pillar structure lying below the upper pillar structure, wherein the lower pillar structure comprises the same material as the first waveguide.

[Example 11] In Example 10,

The modulator device, wherein a bottom surface of the lower pillar structure is aligned with a bottom surface of the first waveguide, and an upper surface of the lower pillar structure is aligned with an upper surface of the first waveguide.

[Example 12] In Example 10,

Wherein the upper pillar structure comprises a heater wire and a heater via lying underneath the heater wire, the heater wire in direct contact with the upper conductor.

[Example 13] In Example 10,

Wherein the upper pillar structure has a first thermal conductivity, and the lower pillar structure has a second thermal conductivity less than the first thermal conductivity.

[Example 14] In Example 9,

Wherein the first dielectric structure comprises a dielectric material having a thermal conductivity less than that of the heater structure.

[Example 15] In Example 9,

The heater pillar structure includes a first pillar segment and a second pillar segment, and the first and second pillar segments include the first waveguide so that the first waveguide is laterally spaced apart between the first and second pillar segments. 1 disposed on opposite sides of the waveguide.

[Example 16] In Example 15,

Wherein the upper conductor extends continuously laterally from the first pillar segment to the second pillar segment.

[Example 17] In Example 9,

Wherein the minimum distance between the heater pillar structure and the first waveguide is less than the minimum distance between the upper conductor and the first waveguide.

[Example 18] A method for forming a modulator device, comprising:

Forming a first waveguide over the substrate;

Forming a lower pillar structure on the substrate-the first waveguide is laterally spaced apart between inner sidewalls of the lower pillar structure -;

Depositing a dielectric structure on the first waveguide and the lower pillar structure;

Forming an upper pillar structure on the lower pillar structure-the upper pillar structure is buried in the dielectric structure; And

Forming an upper conductor along the upper surface of the dielectric structure and the upper surface of the upper pillar structure, thereby defining a heater structure-the heater structure includes a lower pillar structure, an upper pillar structure, and an upper conductor And the upper conductor is placed directly on the first waveguide-

A method for forming a modulator device comprising a.

[Example 19] In Example 18,

Forming the first waveguide and the lower pillar structure,

Forming a device layer over the substrate, the device layer comprising the same material as the substrate; And

Patterning the device layer, thereby defining the first waveguide and the lower pillar structure-the first waveguide and the lower pillar structure are simultaneously formed-

A method for forming a modulator device comprising a.

[Example 20] In Example 18,

Performing an ion implantation process on the first waveguide to define a first doped region and a second doped region in the first waveguide, wherein the first doped region includes a first doping type, and the Wherein the second doped region comprises a second doping type opposite to the first doping type.

Claims (10)

As a modulator device,
An input terminal configured to receive the collision light;
A first waveguide having a first input region and a first output region, the first input region being coupled to the input terminal;
A second waveguide optically coupled to the first waveguide, the second waveguide having a second input region and a second output region, and the second input region coupled to the input terminal;
An output terminal configured to provide emission light modulated based on the collision light, and coupled to a first output area of the first waveguide and a second output area of the second waveguide; And
A heater structure placed on the first waveguide-The bottom surface of the heater structure is aligned with the bottom surface of the first waveguide, and the first waveguide is laterally spaced apart between sidewalls of the heater structure-
Including a modulator device. The method of claim 1,
The heater structure,
An upper conductor directly over the first waveguide; And
Heater column structure continuously extending from the lower surface of the upper conductor to a point aligned with the lower surface of the first waveguide
The modulator device comprising a. The method of claim 2,
Wherein the lower portion of the heater column structure and the first waveguide comprise the same material. The method of claim 2,
Wherein the maximum width of the upper conductor is greater than the maximum width of the heater column structure. The method of claim 2,
Wherein the upper conductor comprises a first material and the heater column structure comprises a second material different from the first material. The method of claim 2,
The upper conductor is vertically offset from the first waveguide by a non-zero vertical distance, the first waveguide is laterally disposed between inner sidewalls of the heater pillar structure, and the first waveguide is non-zero. Wherein the modulator device is laterally offset from the first waveguide by a lateral distance. The method of claim 1,
Wherein the heater structure is U-shaped. The method of claim 1,
The first waveguide includes a first doped region and a second doped region in contact with the first doped region, the first doped region includes a first doping type, and the second doped region is the first doped region. And a second doping type opposite to the type. As a modulator device,
A first waveguide arranged over the substrate and including an active region configured to modulate light;
A second waveguide arranged on the substrate and optically coupled to the first waveguide;
A first dielectric structure arranged over the first and second waveguides; And
A heater structure buried in the first dielectric structure and overlying an active region of the first waveguide
Including,
The heater structure,
An upper conductor disposed directly over the active region of the first waveguide; And
Heater pillar structure continuously extending from the upper conductor to a point below the upper surface of the first waveguide-The first waveguide is located laterally between inner sidewalls of the heater pillar structure, and the first waveguide is 0 It is laterally offset from the inner sidewall of the heater column structure by a distance not
The modulator device comprising a. A method for forming a modulator device, comprising:
Forming a first waveguide over the substrate;
Forming a lower pillar structure on the substrate-the first waveguide is laterally spaced apart between inner sidewalls of the lower pillar structure -;
Depositing a dielectric structure on the first waveguide and the lower pillar structure;
Forming an upper pillar structure on the lower pillar structure-the upper pillar structure is buried in the dielectric structure; And
Forming an upper conductor along the upper surface of the dielectric structure and the upper surface of the upper pillar structure, thereby defining a heater structure-the heater structure including a lower pillar structure, an upper pillar structure, and an upper conductor And the upper conductor is placed directly on the first waveguide-
A method for forming a modulator device comprising a.

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