KR20210045795A - Apparatus of plasma atomic layer deposition - Google Patents

Abstract

A plasma atomic layer deposition apparatus of the present invention comprises: a reactor; a showerhead disposed in an upper part of the reactor, receiving RF power for generating plasma, and configured so that source gas, reaction gas, and purge gas can be alternately supplied; a heater block disposed below the showerhead to face the showerhead, and configured to heat a substrate while supporting the substrate; an inert gas supply unit configured to supply inert gas to a lower portion of the reactor to form a pressure by the inert gas below the heater block, in order to prevent the source gas, the reaction gas, and the purge gas from flowing under the heater block in the reactor; and an exhaust end always spaced apart from the heater block to be disposed on the side of the reactor, and configured to exhaust the source gas, the reaction gas, the purge gas, and the inert gas introduced into the reactor to the outside of the reactor.

Description

Apparatus of plasma atomic layer deposition

The present invention relates to an atomic layer deposition apparatus, and more particularly, to a plasma atomic layer deposition apparatus capable of uniform deposition on a substrate and minimizing particle generation.

The plasma atomic layer deposition apparatus comprises the steps of: first supplying a source gas onto a substrate and adsorbing a portion of the source gas onto the substrate; Supplying a purge gas on the substrate to purging the remaining remaining material gas without being adsorbed; Supplying a reaction gas in a plasma state on a substrate to react with a portion of the adsorbed source gas to form a unit deposition film; It is an apparatus configured to repeat the step of supplying a purge gas on the substrate to purify the remaining unreacted reaction gas.

In recent mass production processes, large-diameter substrates are often introduced into plasma atomic layer deposition apparatuses, so the importance of the technique of uniformly depositing a material film on the substrate is increasing, and at the same time, minimization of particle generation, which is an eternal issue of the deposition process. Industrial demands are also growing.

1. Unexamined Patent Publication 10-2014-0107843 (September 5, 2014)

An object of the present invention is to provide a plasma atomic layer deposition apparatus capable of uniform deposition on a substrate and minimizing particle generation. However, these problems are exemplary, and the scope of the present invention is not limited thereby.

It provides a plasma atomic layer deposition apparatus according to an aspect of the present invention for solving the above problems. The plasma atomic layer deposition apparatus includes a reactor; A showerhead disposed on the upper part of the reactor to which RF power is applied to generate plasma, and configured to alternately supply a source gas, a reaction gas, and a purge gas; A heater block disposed to face the showerhead under the showerhead and configured to heat while supporting the substrate; In order to prevent the raw material gas, reaction gas, and purge gas from flowing under the heater block in the reactor, an inert gas is supplied to the lower portion of the reactor to form a pressure by the inert gas under the heater block. Inert gas supply unit configured to be able to; And an exhaust end that is always spaced apart from the heater block and disposed on the side of the reactor, and configured to exhaust the raw material gas, reaction gas, purge gas, and inert gas introduced into the reactor to the outside of the reactor. .

In the plasma atomic layer deposition apparatus, the exhaust end includes a first exhaust hole disposed to exhaust the source gas, reaction gas, and purge gas introduced into the reactor to the outside of the reactor, and the inert gas introduced into the reactor. It may have a second exhaust hole arranged to exhaust to the outside of the reactor.

In the plasma atomic layer deposition apparatus, the first exhaust hole may be located higher than the second exhaust hole in the reactor.

In the plasma atomic layer deposition apparatus, a level of the first exhaust hole in the reactor may be lower than an upper end of the heater block when a deposition process is performed.

In the plasma atomic layer deposition apparatus, the first exhaust hole in the reactor is configured such that an inlet direction of a gas for exhaust is a vertical direction proceeding from an upper side to a lower side of the reactor, and the second exhaust hole is configured to provide exhaust air. It may be configured such that the inlet direction of the gas is a horizontal direction proceeding from the inside to the outside of the reactor.

In the plasma atomic layer deposition apparatus, the second exhaust hole may be configured to be disposed between the heater block and the reactor in a direction opposite to the heater block.

The plasma atomic layer deposition apparatus may further include a reactor wall disposed on a side of the showerhead and made of a ceramic material so that an electric field can be concentrated between the showerhead and the heat block.

It provides a plasma atomic layer deposition apparatus according to another aspect of the present invention for solving the above problems. The plasma atomic layer deposition apparatus includes a reactor; A showerhead disposed on the upper part of the reactor to which RF power is applied to generate plasma, and configured to alternately supply a source gas, a reaction gas, and a purge gas; A heater block disposed to face the showerhead under the showerhead and configured to heat while supporting the substrate; In order to prevent the raw material gas, reaction gas, and purge gas from flowing under the heater block in the reactor, an inert gas is supplied to the lower portion of the reactor to form a pressure by the inert gas under the heater block. Inert gas supply unit configured to be able to; And an exhaust end that is always spaced apart from the heater block and disposed on the side of the reactor, and configured to exhaust the raw material gas, reaction gas, purge gas, and inert gas introduced into the reactor to the outside of the reactor. .

In the plasma atomic layer deposition apparatus, the inert gas supply unit is configured to additionally supply an inert gas to the side of the reactor, and the exhaust end includes the source gas, reaction gas, purge gas, and inert gas introduced into the reactor. A first exhaust hole disposed to exhaust the outside of the reactor and a third exhaust hole configured to introduce an inert gas additionally supplied to the side of the reactor into the reactor.

In the plasma atomic layer deposition apparatus, the first exhaust hole is located higher than the third exhaust hole in the reactor, and the level of the first exhaust hole in the reactor is when the deposition process is performed. It is lower than the upper end of the heater block, and the third exhaust hole may be configured to be disposed between the heater block and the reactor in a direction opposite to the heater block.

In the plasma atomic layer deposition apparatus, the first exhaust hole in the reactor is configured such that the inlet direction of the gas for exhaust is a vertical direction proceeding from the top to the bottom of the reactor, and the third exhaust hole is the reactor It may be configured such that the inlet direction of the inert gas additionally supplied to the side of the reactor is a horizontal direction proceeding to the inside of the reactor.

According to the embodiments of the present invention made as described above, it is possible to implement a plasma atomic layer deposition apparatus capable of uniform deposition on a substrate and minimizing particle generation. Of course, the scope of the present invention is not limited by these effects.

1 is a cross-sectional view illustrating the structure of a plasma atomic layer deposition apparatus according to a first comparative example of the present invention.
2 is a cross-sectional view illustrating the structure of a plasma atomic layer deposition apparatus according to a second comparative example of the present invention in a process of performing a deposition process while a substrate is loaded.
3 is a cross-sectional view illustrating the structure of a plasma atomic layer deposition apparatus according to a second comparative example of the present invention in a process of unloading a substrate after a deposition process is completed.
4 is a cross-sectional view illustrating the structure of a plasma atomic layer deposition apparatus according to a first embodiment of the present invention.
5 is a cross-sectional view illustrating the structure of a plasma atomic layer deposition apparatus according to a second embodiment of the present invention.
6 and 7 are plan and perspective views illustrating a positional relationship between a first exhaust hole and a heater block in the plasma atomic layer deposition apparatus according to the second embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and the following embodiments make the disclosure of the present invention complete, and the scope of the invention to those of ordinary skill in the art. It is provided to fully inform you. In addition, for convenience of description, in the drawings, at least some of the constituent elements may be exaggerated or reduced in size. In the drawings, the same reference numerals refer to the same elements.

1 is a cross-sectional view illustrating the structure of a plasma atomic layer deposition apparatus according to a first comparative example of the present invention.

Referring to FIG. 1, in the plasma atomic layer deposition apparatus according to the first comparative example of the present invention, an exhaust device 170 is disposed under the reactor 110. Therefore, the raw material gas, reaction gas and/or purge gas supplied through the inlet 121 on the upper part of the reactor 110 are passed through the space 159 at the edge of the heater block 140 through the shower head 120. (110) It has a structure to be exhausted while flowing out adjacent to the driving part 142 in the lower part. That is, the flow path of the source gas, the reaction gas and/or the purge gas may be understood as f1 → f2 → f3.

However, in this structure, when the target deposition material is SiO ₂ , Si ₃ N ₄ , TiN or W, when particles are generated due to cumulative deposition, the generation of particles can be controlled and suppressed by periodic in-situ cleaning up to the bottom of the reactor. On the other hand, the deposition process of high-k materials such as AlO, HfO, ZrO, TiO ₂ as a high-k material that cannot be cleaned in situ can control the generation of particles due to wet cleaning by replacing the parts of the reactor. The replacement parts of the shower head and skin cover, which are easy to replace, can only be partially replaced, but it takes a lot of time to replace the bellows 144 connected to the heater block 140 and the driving unit 142, and the bellows 144 Since such parts are not easy to perform wet cleaning, a reactor having an exhaust structure in which the raw material gas and the reaction gas flow into the heater block driving unit under the reactor 110 is unsuitable, and it is difficult to solve the problem of particle generation.

To this end, a configuration of a plasma atomic layer deposition apparatus according to a second comparative example of the present invention, in which the exhaust device is not located on the lower side of the reactor, is located on the side will be described. Further, the plasma atomic layer deposition apparatus according to the second comparative example of the present invention is to prevent the source gas, reaction gas, and purge gas from flowing under the heater block 140 in the reactor 110, the reactor 110 It includes an inert gas supply unit 160 configured to supply an inert gas to the lower portion of the inert gas to form a pressure due to the inert gas under the heater block 140.

2 is a cross-sectional view illustrating the structure of a plasma atomic layer deposition apparatus according to a second comparative example of the present invention in a process of performing a deposition process while a substrate is loaded, and FIG. 3 is a substrate unloading after the deposition process is completed. Is a cross-sectional view illustrating the structure of the plasma atomic layer deposition apparatus according to the second comparative example of the present invention in the process.

Referring to FIG. 2, the plasma atomic layer deposition apparatus in which the exhaust end 150 is located on the side of the reactor 110 is configured such that the heater block 140 is physically in close contact with the baffle 155 during deposition. The baffle 155 prevents the raw material gas, reaction gas, and purge gas provided through the shower head 120 from flowing under the heater block 140, and the inert gas provided through the inert gas supply unit 160 is supplied to the heater block. It can be prevented from flowing above 140.

However, in such a structure, a thin film may be deposited on the surface where the heater block 140 and the baffle 155 are in contact during the deposition process, and the surface of the heater block 140 and the baffle 155 in close contact with each other when the substrate is unloaded. Physical particles may be generated due to destruction of the deposited thin film in the process of being separated from each other. In addition, since the baffle 155 is in physical contact with the heater block 140, heat loss of the heater block 140 is generated through the baffle 155, so that the quality and thickness uniformity of the thin film during the deposition process of the substrate W Can affect

In addition, in the plasma atomic layer deposition apparatus according to the second comparative example of the present invention, the electric field E1 is induced only between the showerhead 120 and the heater block 140 on which the substrate W is mounted to generate plasma. It should be generated, but since the aluminum reactor wall 126 adjacent to the shower head 120 is closer to the shower head 120 than the heater block 140, the electric field E2 is also induced in the wall 126 direction. So the plasma can be distorted. In addition, the electric field is induced to the edge portion of the baffle 155 in close contact with the heater block 140 than the heater block 140, so that the substrate W is deposited due to the difference in plasma efficiency between the edge of the substrate W and the center portion. During the process, the film quality and thickness uniformity can be affected.

4 is a cross-sectional view illustrating the structure of a plasma atomic layer deposition apparatus according to a first embodiment of the present invention.

Referring to FIG. 4, a plasma atomic layer deposition apparatus 100 according to a first embodiment of the present invention includes a reactor 110; Arranged at the top of the reactor 110, the RF power for generating the plasma is applied from the RF power unit 128, the source gas, the reaction gas, the purge gas configured to be supplied alternately, the showerhead 120 ; A heater block 140 disposed under the shower head 120 to face the shower head 120 and configured to heat while supporting the substrate W; In order to prevent the raw material gas, reaction gas, and purge gas from flowing under the heater block 140 in the reactor 110, an inert gas is supplied to the lower portion of the reactor 110 by the inert gas. An inert gas supply unit 160 configured to form a pressure under the heater block 140; And always spaced apart from the heater block 140 and disposed on the side of the reactor 110, the raw material gas, the reaction gas, the purge gas, and the inert gas introduced into the reactor 110 to the outside of the reactor 110. It includes; an exhaust stage 150 configured to be exhausted.

A lead 122 is disposed at the top of the reactor 110, and an insulating member 124 may be interposed between the showerhead 120 and the lead 122. A driving unit 142 is connected to the lower portion of the heater block 140 to induce vertical motion of the heater block 140.

The exhaust end 150 is a first exhaust hole 151 arranged to exhaust the raw material gas, reaction gas, and purge gas introduced into the reactor 110 to the outside of the reactor 110 and into the reactor 110. A second exhaust hole 152 disposed to exhaust the introduced inert gas to the outside of the reactor 110 may be provided.

According to this, the source gas, reaction gas, and purge gas provided through the shower head 120 through the inlet 121 disposed above the reactor 110 are applied to the substrate W loaded on the heater block 140. It flows out of the heater block 140 through the upper surface, is introduced into the first exhaust hole 151 of the exhaust end 150 and is exhausted. In this case, the flow path of the source gas, reaction gas, and/or purge gas may be understood as f1 → f2 → f6.

In addition, the inert gas introduced into the space below the heater block 140 in the reactor 110 through the inert gas supply unit 160 disposed below the reactor 110 is the second exhaust hole 152 of the exhaust end 150 And exhausted. In this case, the flow path of the inert gas can be understood as f4 → f5 → f6.

In the plasma atomic layer deposition apparatus 100, the first exhaust hole 151 may be positioned higher than the second exhaust hole 152 in the reactor 110. Meanwhile, a level of the first exhaust hole 151 in the reactor 110 may be lower than an upper end of the heater block 140 when a deposition process is performed. In the reactor 110, the first exhaust hole 151 is configured such that the inlet direction of the gas for exhaust is a vertical direction proceeding from the top to the bottom of the reactor 110, and the second exhaust hole 152 ) May be configured such that the inlet direction of the gas for exhaust is a horizontal direction proceeding from the inside to the outside of the reactor 110. Further, the second exhaust hole 152 may be configured to be disposed between the heater block 140 and the reactor 110 in a direction opposite to the heater block 140.

In the case of such a configuration, most of the source gas, reaction gas, and/or purge gas are introduced into the first exhaust hole 151 and exhausted, and even if it is not introduced into the first exhaust hole 151, the second exhaust hole below is Although it may be introduced through 152, the raw material gas, reaction gas, and/or purge gas are blocked by the flow of the inert gas so that the source gas, reaction gas, and/or purge gas are blocked by the flow of the inert gas. It is possible to prevent the accumulation and deposition of unnecessary films. In addition, most of the inert gas is introduced into the second exhaust hole 152 and is exhausted, and may be introduced through the upper first exhaust hole 151 without being introduced into the second exhaust hole 152, but the inert gas Since the gas rising above the first exhaust hole 151 is blocked by the flow of the source gas, reaction gas and/or purge gas, the inert gas flows into the substrate W and affects the thickness distribution of the deposited thin film. You can prevent giving.

On the other hand, while properly controlling the flow of gas up and down the heater block 140, it is not necessary to introduce a baffle in direct contact with the heater block 140, so that the generation of particles can be prevented at the source, and the heat conduction due to the contact is blocked. It is possible to improve the uniformity of the deposited thin film.

The plasma atomic layer deposition apparatus 100 according to the first embodiment of the present invention is disposed on the side of the shower head 120 so that an electric field can be concentrated between the shower head 120 and the heater block 140. The reactor wall 130 made of a ceramic material; may further include.

5 is a cross-sectional view illustrating a structure of a plasma atomic layer deposition apparatus according to a second embodiment of the present invention, and FIGS. 6 and 7 are a first exhaust hole in the plasma atomic layer deposition apparatus according to a second embodiment of the present invention. It is a plan view and a perspective view illustrating the positional relationship of the heater block.

5 to 7, a plasma atomic layer deposition apparatus according to a second embodiment of the present invention includes a reactor 110; A showerhead 120 disposed above the reactor 110 to which RF power for generating plasma is applied, and configured to alternately supply a source gas, a reaction gas, and a purge gas; A heater block 140 disposed under the shower head 120 to face the shower head 120 and configured to be heated while supporting a substrate; In order to prevent the raw material gas, reaction gas, and purge gas from flowing under the heater block 140 in the reactor 110, an inert gas is supplied to the lower portion of the reactor 110 by the inert gas. Inert gas supply units (161, 162) configured to form a pressure under the heater block (140); And always spaced apart from the heater block 140 and disposed on the side of the reactor 110, the raw material gas, the reaction gas, the purge gas, and the inert gas introduced into the reactor 110 to the outside of the reactor 110. It includes; an exhaust stage 150 configured to be exhausted.

In the plasma atomic layer deposition apparatus, the inert gas supply units 161 and 162 further include a supply unit 162 configured to additionally supply an inert gas to the side of the reactor 110, and the exhaust stage 150 Is added to the side of the reactor 110 and a first exhaust hole 151 arranged to exhaust the raw material gas, reaction gas, purge gas, and inert gas introduced into the reactor 110 to the outside of the reactor 110 A third exhaust hole 153 configured to introduce an inert gas supplied to the reactor 110 into the reactor 110 is provided.

In the plasma atomic layer deposition apparatus, the first exhaust hole 151 in the reactor 110 is located higher than the third exhaust hole 153, and the first exhaust hole in the reactor 110 The level of the hole 151 is lower than the upper end of the heater block 140 when the deposition process is performed, and the third exhaust hole 153 is the heater block 140 and the reactor 110 It may be configured to be disposed in a direction opposite to the heater block 140 between.

In the plasma atomic layer deposition apparatus, the first exhaust hole 151 in the reactor 110 is configured such that the inlet direction of the gas for exhaust is a vertical direction proceeding from the top to the bottom of the reactor 110, and , The third exhaust hole 153 may be configured such that the inlet direction of the inert gas additionally supplied to the side of the reactor 110 is a horizontal direction proceeding to the inside of the reactor 110.

For reference, the configuration of the inert gas supply units 161 and 162 shown on the right side of the reactor 110 is equally applied to the configuration of the exhaust stage 150 shown on the left side of the reactor 110, but omitted in FIG. 5 for convenience. . Likewise, the gas flow path f6 of the exhaust end 150 shown on the left side of the reactor 110 is equally applied to the exhaust end 150 shown on the right side of the reactor 110, but for convenience in the drawings of the present specification Omitted.

In the plasma atomic layer deposition apparatus according to the second embodiment of the present invention, the main process gas (raw material gas, reaction gas, purge gas) is exhausted to the baffle exhaust end with the exhaust direction toward the side, and is discharged to the lower space of the reactor (chamber). Inert gas is supplied from the bottom of the reactor to prevent diffusion of the process gas, and at the same time, an inert gas is additionally supplied between the heater block and the baffle exhaust end to prevent the process gas from flowing into the bottom of the reactor. Can be prevented.

Other configurations of the plasma atomic layer deposition apparatus according to the second embodiment of the present invention shown in FIG. 5 are the same as those of the plasma atomic layer deposition apparatus according to the second embodiment of the present invention shown in FIG. A redundant description thereof will be omitted here.

Up to now, a plasma atomic layer deposition apparatus having uniform thickness deposition on a substrate and improved productivity has been described by suppressing efficient plasma generation and particle generation according to a heater block and an exhaust device configuration device and a separate inert gas supply method in the chamber. Due to the generation of unstable plasma according to the structure of the atomic layer deposition reactor device, non-uniform thickness distribution on the substrate due to the problem of uneven exhaust of reaction gas and supply gas, deterioration of thin film characteristics, and generation of particles due to the deposition film formed at an unwanted position in the reactor. It can solve the problem of lowering productivity.

Meanwhile, the technical idea of the present invention can be applied not only to a plasma atomic layer deposition apparatus, but also to a chemical vapor deposition apparatus.

To summarize the deposition apparatus of the present invention from another perspective, the showerhead to which the raw material gas, reaction gas, and purge gas of the material to be deposited can be supplied, and the substrate can be heated to control the quality and deposition rate of the thin film. It consists of a heater block and an exhaust stage through which the supply gas introduced into the reactor can be uniformly exhausted.

The showerhead structure in the present invention is composed of a structure in which gas is not mixed in the diffusion region inside the showerhead if the source gas and the reaction gas are reactive during the deposition process, or if the source gas and the reaction gas are not reactive with each other, the diffusion It may include a showerhead structure that can be mixed in the area. If plasma is required during the deposition process, plasma can be generated within a very short time during the deposition process, and an equipotential electric field can be concentrated only between the showerhead and the heater block on which the substrate is mounted so that plasma can be guided only in the direction of the substrate. It is composed of a structure.

In addition, in order to obtain a uniform thickness distribution on the substrate, the raw material gas and reaction gas supplied from the showerhead can be exhausted through an exhaust end installed outside the reactor so that it can be uniformly exhausted on the substrate, and the exhaust end is The hole size and spacing are uniformly configured to have a uniform exhaust direction and exhaust efficiency, and the location of the exhaust end is disposed below the heater block so that the exhaust efficiency and supply gas are not stagnant and eddy currents are generated.

In addition, during the deposition process, raw material gas and reaction gas are introduced from unwanted areas in the reactor to form a deposition film to form particles.To prevent this, a constant pressure is maintained at the bottom of the chamber so that the raw material gas does not flow into the reactor. Inert gas for can be supplied. However, since the inert gas supplied to the inside of the reactor flows into the deposition area during the substrate deposition process, the adsorption properties of the reaction gas are deteriorated and plasma instability can be induced, and the introduced gas can affect the thickness uniformity and the thin film properties. It is configured to be exhausted through a second exhaust hole separately configured in the exhaust end so as not to enter the region of the substrate to be deposited.

In addition, the present invention is to solve the problem of the deposition apparatus of the above-described comparative examples, for example, in order to solve the problem of the structure in which the heater block and the baffle are in close contact as shown in FIG. 2, the heater block and the exhaust end are always spaced apart. The structure is arranged so that heat loss does not occur in the heater block, and physical particles due to separation are not generated when the substrate placed on the heater block is unloaded. Also, between the heater block and the exhaust end at the bottom of the reactor. A deposition film is formed according to the inflow of the reaction gas supplied from the showerhead into the space of the showerhead to induce the generation of particles.By supplying an inert gas to the lower side, the reaction gas is not induced to the lower side, and an additionally configured exhaust hole at the exhaust end By preventing the inert gas from being guided to the deposition area, it is constructed so as not to affect the thin film characteristics and thickness distribution. In addition, so that plasma efficiency can be concentrated on the substrate, that is, the electric field can be concentrated on the heater block and the showerhead, the reactor wall adjacent to the showerhead is made of a ceramic material that can be electrically insulated, and the substrate is placed on it. It is wider than the distance between the heater block and the shower head. In addition, the position of the exhaust end was located below the heater block in order to have a uniform exhaust direction and smooth exhaust efficiency of the reaction gas.

The structure of the plasma atomic layer deposition apparatus according to the present invention can prevent a decrease in productivity due to particle generation, and can provide a high-quality thin film and uniform thickness distribution according to plasma efficiency and uniform gas exhaustion.

The present invention has been described with reference to the embodiments shown in the drawings, but these are merely exemplary, and those of ordinary skill in the art will appreciate that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

100: plasma atomic layer deposition apparatus
110: reactor
120: shower head
140: heater block
150: exhaust end
151: first exhaust hole
152: second exhaust hole
153: 3rd exhaust hole
160, 161, 162: inert gas supply

Claims (7)

Reactor;
A showerhead disposed on the upper part of the reactor to which RF power is applied to generate plasma, and configured to alternately supply a source gas, a reaction gas, and a purge gas;
A heater block disposed to face the showerhead under the showerhead and configured to heat while supporting the substrate;
In order to prevent the raw material gas, reaction gas, and purge gas from flowing under the heater block in the reactor, an inert gas is supplied to the lower portion of the reactor to form a pressure by the inert gas under the heater block. Inert gas supply unit configured to be able to; And
An exhaust end that is always spaced apart from the heater block and disposed on the side of the reactor, and configured to exhaust the raw material gas, reaction gas, purge gas, and inert gas introduced into the reactor to the outside of the reactor;
Containing,
Plasma atomic layer deposition apparatus. The method of claim 1,
The exhaust end includes a first exhaust hole disposed to exhaust the raw material gas, reaction gas, and purge gas introduced into the reactor to the outside of the reactor, and a first exhaust hole disposed to exhaust the inert gas introduced into the reactor to the outside of the reactor. With 2 exhaust holes,
Plasma atomic layer deposition apparatus. The method of claim 1,
In the reactor, the first exhaust hole is located higher than the second exhaust hole, and the level of the first exhaust hole in the reactor is lower than the upper end of the heater block when the deposition process is performed. And, the second exhaust hole is configured to be disposed between the heater block and the reactor in a direction opposite to the heater block,
Plasma atomic layer deposition apparatus. The method of claim 3,
In the reactor, the first exhaust hole is configured such that the inlet direction of the gas for exhaust is a vertical direction proceeding from the top to the bottom of the reactor, and in the second exhaust hole, the inlet direction of the gas for exhaust is the reactor. It is configured to be a horizontal direction proceeding from the inside to the outside of the,
Plasma atomic layer deposition apparatus. The method of claim 1,
The inert gas supply unit is configured to additionally supply an inert gas to the side of the reactor,
The exhaust end includes a first exhaust hole arranged to exhaust the raw material gas, reaction gas, purge gas, and inert gas introduced into the reactor to the outside of the reactor and an inert gas additionally supplied to the side of the reactor. Having a third exhaust hole configured to flow into,
Plasma atomic layer deposition apparatus. The method of claim 5,
In the reactor, the first exhaust hole is located higher than the third exhaust hole, and the level of the first exhaust hole in the reactor is lower than the upper end of the heater block when the deposition process is performed. And, the third exhaust hole is configured to be disposed between the heater block and the reactor in a direction opposite to the heater block,
Plasma atomic layer deposition apparatus. The method of claim 6,
In the reactor, the first exhaust hole is configured such that the inlet direction of the gas for exhaust is a vertical direction proceeding from the top to the bottom of the reactor, and the third exhaust hole is an inert additionally supplied to the side of the reactor. The gas inlet direction is configured to be a horizontal direction proceeding to the inside of the reactor,
Plasma atomic layer deposition apparatus.

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