KR20210028175A - Semiconductor processing chamber multistage mixing apparatus - Google Patents

Abstract

Exemplary semiconductor processing systems may include a processing chamber, and a remote plasma unit coupled to the processing chamber. The exemplary systems may also include a mixed manifold coupled between the remote plasma unit and the processing chamber. The mixed manifold may feature a first end and a second end opposite the first end, and the mixed manifold may be coupled with the processing chamber at the second end. The mixed manifold may define a central channel through the mixed manifold and may define a port along the exterior of the mixed manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixed manifold. The first trench may be characterized by an inner radius and an outer radius at the first inner sidewall, and the first trench may provide fluid access to the central channel through the first inner sidewall.

Description

Semiconductor processing chamber multi-stage mixing device {SEMICONDUCTOR PROCESSING CHAMBER MULTISTAGE MIXING APPARATUS}

TECHNICAL FIELD The present technology relates to semiconductor systems, processes and equipment. More specifically, the present technology relates to systems and methods for delivering precursors within a chamber and system.

Integrated circuits are made possible by processes that create layers of intricately patterned material on substrate surfaces. Creating patterned material on a substrate requires controlled methods for removal of exposed material. Chemical etching is used for a variety of purposes, including transferring a pattern of photoresist into underlying layers, thinning the layers, or thinning the lateral dimensions of features already present on the surface. Often, it is desirable to have an etching process that etch one material faster than another, for example, to facilitate a pattern transfer process or individual material removal. Such an etching process is said to be selective for the first material. As a result of the diversity of materials, circuits, and processes, etch processes with selectivity for a variety of materials have been developed.

Etching processes may be referred to as wet or dry based on the materials used in the process. Wet HF etching preferentially removes silicon oxide over other dielectrics and materials. However, wet processes can have difficulty penetrating some constrained trenches and can also sometimes deform the rest of the material. Dry etch processes may penetrate into complex features and trenches, but may not provide acceptable top-to-bottom profiles. As device sizes continue to shrink in next-generation devices, the ways in which systems deliver precursors within and through the chamber can have an increasingly impactful impact. As uniformity of processing conditions continues to increase in importance, chamber designs and system settings can play an important role in the quality of the devices being produced.

Accordingly, there is a need for improved systems and methods that can be used to create high quality devices and structures. These and other needs are addressed by this technology.

Exemplary semiconductor processing systems may include a processing chamber and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold can feature a first end and a second end opposite the first end, and can engage the processing chamber at a second end. The mixing manifold can define a central channel through the mixing manifold and can define ports along the exterior of the mixing manifold. The port can be fluidly coupled with a first trench defined within a first end of the mixing manifold. The first trench may be characterized by an outer radius and an inner radius at the first inner sidewall, and the first trench may provide fluid access to the central channel through the first inner sidewall.

In some embodiments, the mixing manifold can also include a second trench defined within the first end of the mixing manifold. The second trench can be located radially outward from the first trench, and the port can be fluidly coupled with the second trench. The second trench can be characterized by an inner radius at the second inner sidewall. The second inner sidewall may also define an outer radius of the first trench. The second inner sidewall can define a plurality of apertures that are defined through the second inner sidewall and provide fluid access to the first trench. The first inner sidewall can define a plurality of apertures that are defined through the first inner sidewall and provide fluid access to the central channel. Each aperture of the plurality of apertures defined through the second inner sidewall may be radially offset from each aperture of the plurality of apertures defined through the first inner sidewall.

Systems may also include an isolator coupled between the mixing manifold and the remote plasma unit. The isolator may be ceramic or may include ceramic. Systems may also include an adapter coupled between the mixing manifold and the remote plasma unit. The adapter may feature a first end and a second end opposite the first end. The adapter may define a central channel extending partially through the adapter. The adapter may define a port through the exterior of the adapter. The port may be fluidly coupled with a mixing channel defined within the adapter. The mixing channel can be fluidly coupled with the central channel. The adapter may include an oxide on the inner surfaces of the adapter. Systems may also include a spacer positioned between the adapter and the mixing manifold.

The technology may also include semiconductor processing systems. Systems can include a remote plasma unit. Systems may include a processing chamber that may include a gas box defining a central channel. Systems may include a breaker plate coupled with a gas box. The breaker plate may define a plurality of apertures through the breaker plate. The systems may include a face plate coupled with a breaker plate at a first surface of the face plate. Systems may also include a mixing manifold coupled with a gas box. The mixing manifold can be characterized by a first end and a second end opposite the first end. The mixing manifold can be coupled with the processing chamber at the second end. The mixing manifold can define a central channel through the mixing manifold, which central channel is fluidly coupled with the defined central channel through a gas box. The mixing manifold can define a port along the exterior of the mixing manifold. The port can be fluidly coupled with a first trench defined within a first end of the mixing manifold. The first trench can be characterized by an outer radius and an inner radius at the first inner sidewall. The first trench can provide fluid access to the central channel through the first inner sidewall.

In some embodiments, the systems may also include a heater coupled to the exterior of the gas box, around the mixing manifold coupled to the gas box. The mixing manifold may be nickel or may contain nickel. Systems can include an adapter coupled with a remote plasma unit. The adapter may feature a first end and a second end opposite the first end. The adapter may define a central channel extending partially through the adapter from the first end of the adapter to the midpoint. The adapter may define a plurality of access channels extending from the midpoint of the adapter toward the second end of the adapter. The plurality of access channels can be distributed radially around a central axis through the adapter. The adapter may define a port through the exterior of the adapter. The port may be fluidly coupled with a mixing channel defined within the adapter. The mixing channel can extend through the central portion of the adapter towards the second end of the adapter. The adapter may define a port through the exterior of the adapter. The port may be fluidly coupled with a mixing channel defined within the adapter. The mixing channel may extend through the central portion of the adapter towards the midpoint of the adapter to fluidly access the central channel defined by the adapter.

The technology may also include methods of delivering precursors through a semiconductor processing system. The methods may include forming a plasma of a fluorine-containing precursor in a remote plasma unit. Methods may include flowing plasma effluents of a fluorine-containing precursor into an adapter. Methods may include flowing a hydrogen containing precursor into an adapter. The methods may include mixing a hydrogen containing precursor with plasma effluents to produce a first mixture. The methods can include flowing the first mixture into the mixing manifold. The methods can include flowing a third precursor into the mixing manifold. The methods can include mixing a third precursor with the first mixture to produce a second mixture. The methods may also include flowing the second mixture into the processing chamber.

Such a technique can provide many benefits over conventional systems and techniques. For example, compared to conventional designs, the present technology can utilize a limited number of components. Additionally, by using components that generate etchant species outside of the chamber, mixing and delivery to the substrate can be provided more uniformly compared to conventional systems. These and other embodiments, along with their many advantages and features, are described in more detail in conjunction with the following description and accompanying drawings.

A further understanding of the properties and advantages of the disclosed technology may be realized with reference to the remaining portions of this specification and the drawings.
1 shows a top view of an exemplary processing system in accordance with some embodiments of the present technology.
2 shows a schematic cross-sectional view of an exemplary processing chamber in accordance with some embodiments of the present technology.
3 shows a schematic partial bottom view of an isolator in accordance with some embodiments of the present technology.
4 shows a schematic partial top view of an adapter according to some embodiments of the present technology.
5 shows a schematic cross-sectional view of an adapter, through line AA in FIG. 2, in accordance with some embodiments of the present technology.
6 shows a schematic perspective view of a mixing manifold in accordance with some embodiments of the present technology.
7 shows a schematic cross-sectional view of a mixing manifold, through line BB of FIG. 6, in accordance with some embodiments of the present technology.
FIG. 8 shows a schematic cross-sectional view of a mixing manifold, through line CC of FIG. 6, in accordance with some embodiments of the present technology.
9 illustrates operations of a method of delivering precursors through a processing system in accordance with some embodiments of the present technology.
Some of the drawings are included as schematic diagrams. It is to be understood that the drawings are for illustrative purposes, and that scale is not taken into account unless specifically stated that scale has been taken into account. Additionally, as schematic diagrams, the drawings are provided to aid understanding, may not include all aspects or information compared to realistic representations, and may include exaggerated components for illustrative purposes.
In the accompanying drawings, similar components and/or features may have the same reference label. Further, various elements of the same type can be distinguished by placing a character that distinguishes similar elements after the reference label. Where only the first reference label is used herein, this description is applicable to any of the similar elements having the same first reference label, regardless of the text.

The present technology includes semiconductor processing systems, chambers, and components for performing semiconductor manufacturing operations. Many dry etching operations performed during semiconductor manufacturing can involve multiple precursors. When activated and combined in various ways, these etchants can be delivered to the substrate to modify or remove aspects of the substrate. Conventional processing systems can provide precursors in a number of ways, such as for deposition or etching. One way to provide enhanced precursors is to provide all of the precursors through a remote plasma unit prior to delivery of the precursors through a processing chamber to a substrate, such as a wafer, for processing. However, the problem with this process is that different precursors can be reactive with different materials, which can cause damage to the remote plasma unit or components that deliver the precursors. For example, the enhanced fluorine-containing precursor may react with aluminum surfaces, but not with oxide surfaces. The enhanced hydrogen containing precursor may not react with the aluminum surface in the remote plasma unit, but may react with the oxide coating to remove the oxide coating. Therefore, if the two precursors are delivered together through a remote plasma unit, they can damage the liner or coating within the unit. Additionally, the power at which the plasma is ignited can affect the process performed, by the amount of dissociation generated. For example, in some processes, a large amount of dissociation may be beneficial for a hydrogen containing precursor, but a lesser amount of dissociation may allow for a more controlled etch for a fluorine containing precursor.

Conventional processing can also deliver one precursor through a remote plasma device for plasma processing and a second precursor directly into the chamber. However, a problem with this process is that mixing of the precursors may be difficult, may not provide adequate control over the generation of etchant, and may not provide a uniform etchant to the wafer or substrate. This can cause processes not to be performed uniformly across the surface of the substrate, which can cause device problems as patterning and formation continues.

The present technology delivers precursors into the chamber while only delivering one etchant precursor through the remote plasma unit, although multiple precursors, such as carrier gases or other etchant precursors, may also be flowed through the remote plasma unit. These problems can be overcome by utilizing components and systems configured to mix the precursors prior to doing so. Certain bypass modes can thoroughly mix the precursors prior to delivery of the precursors to the processing chamber, and can provide intermediate mixing as each precursor is added to the system. This may allow uniform processes to be performed while protecting the remote plasma unit. Chambers of the present technology may also include component configurations that maximize thermal conductivity through the chamber, and may increase ease of service by combining the components in specific ways.

While the remaining disclosure will routinely identify specific etch processes utilizing the disclosed technology, it will be readily understood that the present systems and methods are equally applicable to the deposition and cleaning processes that may occur in the described chambers. Accordingly, the technique is intended for use only with etch processes and should not be considered limited. The present disclosure provides, prior to describing component aspects and variations for such a system according to embodiments of the present technology, one possible system and one possible system that may be used with the present technology to perform some of the removal operations. We will discuss the chamber.

1 shows a top view of one embodiment of a processing system 100 of deposition, etching, baking, and curing chambers according to embodiments. In this figure, a pair of front open integrated pods (FOUPs) 102 supply substrates of various sizes, which are received by robot arms 104, and tandem sections 109a-c. Is disposed in the low pressure holding region 106 prior to being disposed within one of the substrate processing chambers 108a-f located at. The second robotic arm 110 may be used to transport substrate wafers from the holding region 106 to and back to the substrate processing chambers 108a-f. Each of the substrate processing chambers 108a-f includes periodic layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, pre-cleaning, degassing, orientation, And in addition to other substrate processes, it may be provided to perform a number of substrate processing operations including the dry etch processes described herein.

Substrate processing chambers 108a-f may include one or more system components for depositing, annealing, curing, and/or etching a dielectric film onto a substrate wafer. In one configuration, two pairs of processing chambers (e.g., 108c-d and 108e-f) can be used to deposit a dielectric material on a substrate, and a third pair of processing chambers (e.g., 108a-b) can be used to etch the deposited dielectric. In another configuration, all three pairs of chambers (eg, 108a-f) may be configured to etch the dielectric film on the substrate. Any one or more of the described processes may be performed in chamber(s) separate from the manufacturing system shown in different embodiments. It will be appreciated that additional configurations of deposition, etch, annealing, and cure chambers for dielectric films may be considered by system 100.

2 shows a schematic cross-sectional view of an exemplary processing system 200 in accordance with embodiments of the present technology. System 200 may include a processing chamber 205 and a remote plasma unit 210. The remote plasma unit 210 may be coupled with a processing chamber 205 having one or more components. The remote plasma unit 210 may be coupled with one or more of the isolator 215, the adapter 220, the spacer 230, and the mixing manifold 235. The mixing manifold 235 may be coupled with the top of the processing chamber 205 and may be coupled with an inlet to the processing chamber 205.

The isolator 215 may be coupled with the remote plasma unit 210 at the first end 211 and may be coupled with the adapter 220 at the second end 212 opposite the first end 211. One or more channels may be defined through the isolator 215. A port or opening to the channel 213 may be defined at the first end 211. The channel 213 may be defined centrally within the isolator 215 and is a first in a direction perpendicular to the central axis through the isolator 215, which may be the direction of flow from the remote plasma unit 210. The cross-sectional surface area can be characterized. The diameter of the channel 213 may be the same as or common to the outlet port from the remote plasma unit 210. Channel 213 may be characterized by a length from first end 211 to second end 212. The channel 213 may extend through the entire length of the isolator 215, or less than the length from the first end 211 to the second end 212. For example, the channel 213 may extend less than half the length from the first end 211 to the second end 212 of the isolator 215, or the channel 213 may be a first end 211 ) May extend to half the length from the second end 212 to the second end 212, or the channel 213 may extend more than half the length from the first end 211 to the second end 212, or The channel 213 may extend to about half the length from the first end 211 to the second end 212.

Channel 213 may transition through second end 212 to smaller apertures 214 extending from the base of channel 213 defined within isolator 215. For example, one such smaller aperture 214 is illustrated in FIG. 2, but any number of apertures 214 can be passed through the isolator 215 from the channel 213 to the second end 212. It should be understood that it can be limited. Smaller apertures may be distributed around the central axis of the isolator 215 as will be discussed further below. The smaller apertures 214 may be characterized by a diameter of about 50% or less of the diameter of the channel 213, and about 40% or less, about 30% or less, about 20% or less of the diameter of the channel 213, It may be characterized by a diameter of about 10% or less, about 5% or less, or less than the diameter of the channel 213. The isolator 215 may also define one or more trenches defined below the isolator 215. The trenches may be or include one or more annular recesses defined within the isolator 215 to allow seating of an o-ring or elastomeric element, which may allow mating with the adapter 220.

Other components of the processing system may be metal or thermally conductive materials, while isolator 215 may be a less thermally conductive material. In some embodiments, the isolator 215 may be or include a ceramic, plastic, or other insulating component configured to provide thermal isolation between the remote plasma unit 210 and the chamber 205. . During operation, the remote plasma unit 210 may be cooled or operated at a lower temperature compared to the chamber 205, while the chamber 205 may be heated or operated at a higher temperature compared to the remote plasma unit 210. I can. Providing a ceramic or insulating isolator 215 may prevent or limit thermal, electrical, or other interference between components.

In embodiments, adapter 220 may be coupled with second end 212 of isolator 215. Adapter 220 may feature a first end 217 and a second end 218 opposite the first end. Adapter 220 may define one or more central channels through portions of adapter 220. For example, from the first end 217, the central channel 219 or the first central channel can extend at least partially through the adapter 220 toward the second end 218, and It can extend through any length. Similar to the central channel 213 of the isolator 215, the central channel 219 may extend less than half the length through the adapter 220, or about half the length of the adapter 220. Alternatively, it may extend more than half the length of the adapter 220. The central channel 219 may be characterized by a diameter that may be related to, the same, or substantially the same as the diameter of the channel 213. Additionally, the central channel 219 may be characterized by a diameter of a shape that surrounds the apertures 214 of the isolator 215, which shape, in embodiments, e.g., a center through the isolator 215. The apertures 214 are precisely enclosed by being characterized by a radius defined from the axis and substantially similar or equal to a radius extending to the outer edge of the diameter of each aperture 214. For example, the central channel 219 may feature a circular or elliptical shape characterized by one or more diameters that may extend tangentially to the outer portion of each aperture 214.

The adapter 220 may define a base of a central channel 219 within the adapter 220, which base is a plurality of aperes that may extend at least partially through the adapter 220, from the central channel 219. The transition to the churdle 225 can be defined. The transition can occur at the midpoint through the adapter, which can be at any location along the length of the adapter. For example, apertures 225 may extend from the base of central channel 219 toward second end 218 of adapter 220 and may extend completely through second end 218. In other embodiments, apertures 225 are, through a middle portion of adapter 220, from a first end accessing central channel 219 to a second end accessing second central channel 221. May extend, and the second central channel may extend through the second end 218 of the adapter 220. The central channel 221 may be characterized by a diameter similar to the central channel 219, and in other embodiments, the diameter of the central channel 221 may be greater than or less than the diameter of the central channel 219. The apertures 225 may be characterized by a diameter of about 50% or less of the diameter of the central channel 219, and about 40% or less, about 30% or less, about 20% or less of the diameter of the central channel 219, It may be characterized by a diameter of about 10% or less, about 5% or less, or less than the diameter of the central channel 219.

The adapter 220 may define a port 222 through the exterior of the adapter 220, such as along a sidewall or side portion of the adapter 220. Port 222 may provide access to deliver a first mixed precursor to be mixed with a precursor provided from remote plasma unit 210. Port 222 may provide fluid access through adapter 220 to mixing channel 223, which may extend at least partially toward a central axis of adapter 220. The mixing channel 223 can extend at any angle into the adapter 220, and in some embodiments, the first portion 224 of the mixing channel 223 is centered through the adapter 220 in the direction of flow. While it may extend perpendicular to the axis, the first portion 224 may run at an inclined or tilted angle toward a central axis through the adapter 220. The first portion 224 may traverse the apertures 225, which may be distributed around the central axis of the adapter 220 similar to the apertures 214 of the isolator 215 described above. With this distribution, the first portion 224 can extend past the apertures 225 toward the central axis of the adapter 220 without crossing or intersecting through the apertures 225.

The first portion 224 of the mixing channel 223 can be transitioned to a second portion 226 of the mixing channel 223, which can move vertically through the adapter 220. In some embodiments, the second portion 226 extends along a central axis through the adapter 220 and may be axially aligned with this central axis. The second portion 226 may also extend through an intermediate portion of a circle or other geometric shape that extends through the central axis of each aperture 225. The second portion 226 extends to the second central channel 221 together with the apertures 225 and may be fluidly coupled with the second central channel. Accordingly, in some embodiments, the precursor delivered through the port 222 may be mixed with the precursor delivered through the remote plasma unit 210 within the lower portion of the adapter 220. This may constitute a first stage of mixing within the components between the remote plasma unit 210 and the processing chamber 205.

An alternative embodiment in which the second portion 226 of the mixing channel 223 extends vertically in the opposite direction is further illustrated in FIG. 2. For example, as described above, the second portion 226a extends vertically toward the second central channel 221 to allow mixing within this region. Alternatively, the second portion 226b may extend vertically toward the first central channel 219. Although illustrated as a hidden view, the second portion 226b is illustrated as a separate embodiment, and the adapters according to the present technology extend toward the first end 217 or the second end 218 of the adapter 220. It is to be understood that it may include any version of the second portion 226 that becomes. When delivered in a direction toward the first central channel 219, mixing of the second precursor delivered through the port 222 may occur within the first portion of the adapter 220, and delivered through the port 222 Improved uniformity may be provided by allowing the precursor to flow through the plurality of apertures 225 together with the precursor delivered from the remote plasma unit 210. When delivered towards the second central channel 221, it is likely that less complete mixing may occur due to the flow of precursors that may increase the central concentration of precursors delivered through the central channel 221. When delivered towards the first central channel 219, the precursor through the port 222 can be distributed radially within the first central channel and flow downwards from the remote plasma unit 210 and/or pressure through the chamber. As the precursor is forced by, it may proceed more evenly through the apertures 225.

Adapter 220 may be made of a material similar to or different from isolator 215. In some embodiments, the isolator may comprise a ceramic or insulating material, but the adapter 220 is made of or may include treated aluminum on one or more surfaces, aluminum including oxides of aluminum, or some other material. I can. For example, the inner surfaces of adapter 220 may be coated with one or more materials to protect adapter 220 from damage that may be caused by plasma effluents from remote plasma unit 210. The inner surfaces of the adapter 220 may include, for example, yttrium oxide or barium titanate, and may be anodized to a range of materials that may be inert to plasma effluents of fluorine. Adapter 220 may also define trenches 227 and 228, which may be annular trenches, and may be configured to seat o-rings or other sealing elements.

The spacer 230 may be coupled to the adapter 220. In embodiments, the spacer 230 may be ceramic or comprise ceramic, and may be a material similar to the isolator 215 or adapter 220. The spacer 230 may define a central aperture 232 passing through the spacer 230. The central aperture 232 may be characterized by a tapered shape through the spacer 230 from a portion adjacent to the second central channel 221 of the adapter 220 to a side opposite to the spacer 230. A portion of the central aperture 232, proximate to the second central channel 221 may be characterized by a diameter equal to or similar to the diameter of the second central channel 221. The central aperture 232 may be characterized by a percentage of tapered portions of at least about 10% along the length of the spacer 230, and in embodiments, at least about 20%, at least about 30%, at least about 40%, A decrease of about 50% or more, about 60% or more, about 70% or more, about 80% or more, about 90% or more, about 100% or more, about 150% or more, about 200% or more, about 300% or more, or more It can be characterized by a percentage of wealth.

The mixing manifold 235 may be coupled with the spacer 230 at the first end 236 or the first surface, and may be coupled with the chamber 205 at the second end 237 opposite the first end 236. I can. Mixing manifold 235 may define a central channel 238, which may extend from a first end 236 to a second end 237 and to deliver precursors into the processing chamber 205. Can be configured. Mixing manifold 235 may also be configured to incorporate additional precursors with mixed precursors delivered from adapter 220. The mixing manifold can provide a second stage of mixing within the system. The mixing manifold 235 may define a port 239 along the exterior of the mixing manifold 235, such as along a side or sidewall of the mixing manifold 235. Mixing manifold 235 may, in some embodiments, define multiple ports 239 on opposite sides of mixing manifold 235 to provide additional access for delivery of precursors to the system. have. Mixing manifold 235 can also define one or more trenches within first surface 236 of mixing manifold 235. For example, mixing manifold 235 can define a first trench 240 and a second trench 241, which can provide fluid access from the port 239 to the central channel 238. For example, port 239 may provide access to a channel 243 that may provide fluid access to one or both trenches, for example, from below the trench, as illustrated. The trenches 240 and 241 will be described in more detail below.

The central channel 238 can be characterized by a first portion 242 extending from the first end 236 to the flared section 246. The first portion 242 may be characterized by a cylindrical profile and may be characterized by a diameter similar or equal to the outlet of the central aperture 232 of the spacer 230. The flared section 246 is, in embodiments, at least about 10%, at least about 20%, at least about 30%, at least about 40%, at least about 50%, at least about 60%, at least about 70%, about 80 % Or more, about 90% or more, about 100% or more, about 150% or more, about 200% or more, about 300% or more, or more. In embodiments, mixing manifold 235 may be made of a material similar or different from adapter 220. For example, mixing manifold 235 may comprise nickel, which may provide adequate protection for precursors that may contact all portions of the mixing manifold. Unlike conventional techniques, since fluorine plasma effluents can already be mixed upstream of the mixing manifold, problems related to recombination may not occur. For example, without wishing to be bound by any particular theory, nickel can catalyze the recombination of fluorine radicals to diatomic fluorine, which can contribute to polysilicon loss in prior art techniques. If fluorine effluents are mixed before delivery to a nickel, nickel plated or coated component, this process can be limited because the concentration of fluorine effluents can be reduced, further protecting the polysilicon features at the substrate level. do.

The flared section 246 can provide an outlet for precursors that are delivered through the mixing manifold 235 through the second end 237 and through the outlet 247. Sections of the central channel 238 through the mixing manifold 235 may be configured to provide adequate or complete mixing of the precursors delivered to the mixing manifold prior to providing the mixed precursors into the chamber 205. . Unlike the prior art, by performing an etchant or precursor mixing prior to delivery to the chamber, the present systems can provide an etchant with uniform properties prior to being dispensed around the chamber and substrate. Additionally, by providing multiple stages of mixing, a more uniform mixing can be provided for each of the precursors. In this way, processes performed with the present technology can have more uniform results across the substrate surface. The illustrated stack of components may also limit particle accumulation by reducing the number of elastomeric seals included in the laminate, which may deteriorate over time and affect the processes performed. It can create particles that can have a negative effect.

Chamber 205 may include multiple components in a stacked arrangement. The chamber stack may include a gas box 250, a blocker plate 260, a face plate 270, an optional ion suppression element 280, and a lid spacer 290. Components may be utilized to dispense a precursor or set of precursors through the chamber to provide uniform delivery of etchants or other precursors to a substrate for processing. In embodiments, these components may be stacked plates each at least partially defining the exterior of the chamber 205.

The gas box 250 may define a chamber inlet 252. A central channel 254 for delivering precursors into the chamber 205 may be defined through the gas box 250. The inlet 252 may be aligned with the outlet 247 of the mixing manifold 235. In embodiments, inlet 252 and/or central channel 254 may be characterized by a similar diameter. The central channel 254 may extend through the gas box 250 and may be configured to deliver one or more precursors within a volume 257 defined from above by the gas box 250. The gas box 250 may include a first surface 253, eg, a top surface, of the gas box 250, and a second surface 255, eg, a bottom surface opposite the first surface 253. In embodiments, the top surface 253 may be a planar or substantially planar surface. Heater 248 may be coupled with top surface 253.

In embodiments, heater 248 may be configured to heat chamber 205 and conductively heat each lid stack component. Heater 248 can be any type of heater including a fluid heater, electric heater, microwave heater, or other device configured to conduct heat to the chamber 205 in a conductive manner. In some embodiments, the heater 248 may be or include an electric heater formed in an annular pattern around the first surface 253 of the gas box 250. The heater may be defined over the gasbox 250 and around the mixing manifold 235. The heater may be a plate heater or a resistive element heater, which may be configured to provide heat of up to about 2,000 W, of about 2,000 W, or in excess of about 2,000 W, and at least about 2,500 W, at least about 3,000 W, It may be configured to provide at least about 3,500 W, at least about 4,000 W, at least about 4,500 W, at least about 5,000 W, or more.

In embodiments, heater 248 may be configured to create a variable chamber component temperature of up to about 50° C., of about 50° C., or greater than about 50° C., and may be greater than or equal to about 75° C. , At least about 150° C., at least about 200° C., at least about 250° C., at least about 300° C., or higher. Heater 248 may be configured to raise individual components, such as ion suppression element 280, to any of these temperatures to facilitate processing operations, such as annealing. In some processing operations, the substrate may be raised towards the ion suppression element 280 for an annealing operation, and the heater 248 raises the temperature of the heater to any specific temperature mentioned above, or within or within the stated temperatures. It can be adjusted to rise conductively within any range of temperatures between any of the mentioned temperatures.

The second surface 255 of the gas box 250 may be coupled to the circuit breaker plate 260. The circuit breaker plate 260 may be characterized by a diameter that is the same as or similar to the diameter of the gas box 250. The circuit breaker plate 260 may define a plurality of apertures 263 through the circuit breaker plate 260, and only a sample of these apertures is illustrated, and these apertures are precursors from the volume 257, e.g., Dispensing of the etchants may be allowed and may begin dispensing the precursors through the chamber 205 for uniform delivery to the substrate. While only a few apertures 263 are illustrated, it should be understood that the breaker plate 260 may have any number of apertures 263 defined throughout the structure. The breaker plate 260 may feature a raised annular section 265 at the outer diameter of the breaker plate 260 and a lowered annular section 266 at the outer diameter of the breaker plate 260. In embodiments, the raised annular section 265 may provide structural rigidity for the breaker plate 260 and may define the sides or outer diameter of the volume 257. The breaker plate 260 can also define the bottom of the volume 257 from below. Volume 257 may allow distribution of precursors from central channel 254 of gasbox 250 prior to passing through apertures 263 of breaker plate 260. In embodiments, the lowered annular section 266 may also provide structural rigidity for the breaker plate 260 and may define the sides or outer diameter of the second volume 258. The blocker plate 260 can also define the top of the volume 258 from above, while the bottom of the volume 258 can be defined from below by the face plate 270.

The face plate 270 may include a first surface 272 and a second surface 274 opposite the first surface 272. The face plate 270 may be engaged with the circuit breaker plate 260 at a first surface 272 that may engage the lowered annular section 266 of the circuit breaker plate 260. The face plate 270 may define a ledge 273 extending to the third volume 275 at least partially defined within the face plate 270 or by the face plate 270 within the second surface 274. . For example, the face plate 270 may define the sides or outer diameter of the third volume 275 as well as the top of the volume 275 from above, while the ion suppression element 280 has a third volume 275 ) Can be defined from below. Although not illustrated in FIG. 2, the face plate 270 may define a plurality of channels passing through the face plate.

The ion suppression element 280 may be positioned proximate the second surface 274 of the face plate 270 and may engage the face plate 270 at the second surface 274. The ion suppression element 280 may be configured to reduce ion migration into the processing region of the chamber 205 containing the substrate. The ion suppression element 280 may define a plurality of apertures through the structure, although not illustrated in FIG. 2. In embodiments, the gas box 250, the blocker plate 260, the face plate 270, and the ion suppression element 280 may be coupled together, and in embodiments, may be directly coupled together. By directly bonding the components, the heat generated by heater 248 can be conducted through the components to maintain a specific chamber temperature where less variation between components can be maintained. The ion suppression element 280 may also contact the lid spacer 290, which may together at least partially define a plasma treatment region in which the substrate is held during processing.

3 shows a schematic partial bottom view of an isolator 215 in accordance with some embodiments of the present technology. As previously discussed, the isolator 215 can define a plurality of apertures 214 extending from the central channel 213 of the isolator 215 to the second end 212. The apertures 214 may be distributed around a central axis through the isolator 215 and may be distributed equidistantly from the central axis through the isolator 215. The isolator 215 may define any number of apertures 214 and the apertures may increase the movement, distribution, and/or turbulence of the precursor flowing through the isolator 215.

4 shows a schematic partial top view of an adapter 220 according to embodiments of the present technology. As previously described, the first central channel 219 may extend from the first end 217 of the adapter 220 and may extend partially through the adapter. The adapter may transition to a plurality of apertures 225 extending towards the second end through the adapter as discussed above and may define the bottom of the central channel, which may have a cylindrical profile. Similar to apertures 214, apertures 225 may be distributed around a central axis through adapter 220 and may be positioned equidistant to the central axis. Adapter 220 may define any number of apertures through the adapter, and in some embodiments may define more apertures than in isolator 215. Additional apertures can increase mixing with the added precursor. As previously mentioned, the mixing channel can deliver additional precursor towards the first end of the adapter and into the first central channel 219. In this embodiment, the views of Figs. 4 and 5 will be reversed.

5 shows a schematic cross-sectional view of the adapter 220, through line A-A of FIG. 2, in accordance with some embodiments of the present technology. 5 may illustrate a view through the second central channel 221, which may show an outlet to the mixing channel through the second portion 226 described previously. As illustrated, the second portion 226 can extend between the apertures 225 and can extend along the central axis of the adapter 220 towards the second end of the adapter. Additionally, as mentioned above, in the embodiments in which the second portion 226 extends towards the first central channel 219, the views of FIGS. 4 and 5 will be reversed and mixed The precursors and precursor introduced through the port of the adapter 220 will be premixed and exit the apertures 225.

6 shows a schematic perspective view of a mixing manifold 235 in accordance with some embodiments of the present technology. As previously mentioned, the mixing manifold 235 can define a central channel 238 through the mixing manifold, and the central channel 238 can transport the mixed precursors from the adapter to the processing chamber. Mixing manifold 235 may also include a number of features that allow the introduction of additional precursors that may be mixed with previously mixed precursors. As previously described, one or more ports 239 may provide access for introduction of precursors into mixing manifold 235. Port 239 may access the channel as illustrated in FIG. 2, and the channel may extend into one or more of the trenches defined in the first surface 236 of the mixing manifold 235.

The trenches can be defined in the first surface 236 of the mixing manifold 235, and the trenches can form channels that are at least partially isolated when the mixing manifold is engaged with the spacer 230 discussed previously have. The first trench 240 may be formed around the central channel 238. The first trench 240 may be annular in shape and may be characterized by an inner radius and an outer radius from a central axis through the mixing manifold 235. The inner radius may be defined by a first inner sidewall 605 that may define an uppermost portion of the central channel 238 extending through the mixing manifold 235. The outer radius of the first trench 240 may be defined by a first outer sidewall 610 that may be located radially outward from the first inner sidewall 605. The first trench 240 can provide fluid access to the central channel 238 through the first inner sidewall 605. For example, the first inner sidewall 605 may define a plurality of apertures 606 passing through the first inner sidewall 605. Apertures 606 may be distributed around the first inner sidewall 605 to provide multiple access locations for additional precursor to be delivered within the central channel 238.

The first inner sidewall 605 may be characterized by a beveled or chamfered surface from the first surface 236 toward the first trench 240. In embodiments, a chamfered profile may be formed capable of retaining at least a portion of the first inner sidewall 605 along the first surface 236 usable for engagement with the spacer 230 discussed previously. The chamfer may also provide additional lateral spacing to prevent leakage across the first surface between the first trench 240 and the central channel 238. The apertures 606 may be defined through the chamfered portion, and may be defined through the first inner sidewall 605 at an angle, for example, at right angles to the plane of the chamfered portion, or at some other angle.

The mixing manifold 235 may define a second trench 241 formed radially outward from the first trench 240. In some embodiments, the second trench 241 may also be annular in shape, and the central channel 238, the first trench 240, and the second trench 241 define mixing manifold 235. It can be aligned concentrically with respect to the central axis through which it passes. The second trench 241 may be fluidly coupled with the port 239 through the channel 243 described previously. The channel 243 may extend to one or more locations within the second trench 241 and may access the second trench 241 from the base of the trench, but in other embodiments, the channel 243 is a sidewall of the trench. The trench 241 may be accessed through. By approaching from below the second trench 241, the depth of the second trench 241 can be minimized, which can reduce the volume of the formed channel, and to increase the uniformity of delivery, diffusion of the delivered precursor. Can be limited.

The second trench 241 may be defined between a first outer side wall 610, which may alternatively be a second inner side wall, and an outer radius defined by the body of the mixing manifold 235. In embodiments, the first outer sidewall 610 may define each of the first trench 240 and the second trench 241 along the first surface 236 of the mixing manifold 235. The first outer sidewall 610 is also sloped or chamfered along the first surface 236 on the side of the first outer sidewall proximate the second trench 241, similar to the profile of the first inner sidewall 605. Profile. The first outer sidewall 610 may also define a plurality of apertures 608 defined through the wall to provide fluid access between the second trench 241 and the first trench 240. The apertures 608 may be defined anywhere along or through the first outer side wall 610, and may be defined through a chamfered portion, similar to the apertures through the first inner side wall 605. Accordingly, the precursor delivered through the port 239 may flow into the second trench 241, may be delivered into the first trench 240 through the apertures 608, and pass through the apertures 606. May be delivered through the central channel 238, where the precursor may be mixed with the precursors delivered through the adapter 220.

The apertures 608 may include an arbitrary number of apertures limited through the first outer sidewall 610, and the apertures 606 may include an arbitrary number of apertures defined through the first inner sidewall 605. It may include. In some embodiments, the number of apertures through each wall may not be the same. For example, in some embodiments, the number of apertures 606 through the first inner sidewall 605 may be greater than the number of apertures 608 through the first outer sidewall, and in some embodiments In, the number of apertures 606 may be twice or more than the number of apertures 608. Additionally, the apertures 608 can be radially offset from the apertures 606, so that any aperture 608 can be any aperture through a radius extending from the central axis of the mixing manifold 235. 606). This aperture and channel design can improve the delivery of additional precursors into the central channel 238 by providing cyclic flow through the mixing manifold, and a more uniform delivery through each aperture 606. Can provide. The mixing manifold 235 may also define an additional trench 615 that may be radially outside the second trench 241 and may be configured to receive an elastomeric element or o-ring.

7 shows a schematic cross-sectional view of the mixing manifold 235, through line B-B of FIG. 6, in accordance with some embodiments of the present technology. The cross section illustrates apertures 608 as they are defined through first outer sidewall 610 to provide fluid access from second trench 241 to first trench 240. Additionally, FIG. 7 illustrates some embodiments in which apertures 608 are spaced full diameter across from each other through a first outer sidewall. The apertures 608 are also approximately spaced so that the port 239 is spaced equidistantly between the two apertures 608. The previously described channel 243 may enter the second trench 241 at a similar location such that it is the same or substantially the same distance from each aperture 608.

8 shows a schematic cross-sectional view of the mixing manifold 235, through line C-C of FIG. 6, in accordance with some embodiments of the present technology. The cross section illustrates the apertures 606 as defined through the first inner sidewall 605 to provide fluid access from the first trench 240 to the central channel 238. The apertures 608 as well as the apertures 606 may, respectively, extend through the first outer sidewall and the chamfered portion of the first inner sidewall, at an angle perpendicular to the angle of the chamfer or at some other tilting angle. Can be extended. By including an angle of inclination through features, such as the first outer sidewall 610, delivery can provide a flow that further distributes the precursor before it rises to flow through the next set of apertures. This may also limit machining effects of forming apertures or otherwise damaging the first surface 236. Mixing manifold 235 can provide a design that provides a more uniform mixing of precursors with one or more precursors, extending through central channel 238.

9 illustrates operations of a method 900 of delivering precursors through a processing chamber in accordance with some embodiments of the present technology. Method 900 may be performed in system 200 and may allow for improved precursor mixing outside the chamber while protecting components from etchant damage. While the components of the chamber may be exposed to etchants that can cause wear over time, the present technology may limit these components to those that can be replaced and serviced more easily. For example, the present technology may limit the exposure of the internal components of the remote plasma unit, which may allow certain protections to be applied to the remote plasma unit.

Method 900 may include forming a remote plasma of a fluorine-containing precursor at operation 905. The precursor can be delivered to a remote plasma unit to dissociate to produce plasma effluents. In embodiments, the remote plasma unit may be coated or lined with an oxide or other material that can withstand contact with fluorine containing effluents. In embodiments, in addition to the carrier gases, other etchant precursors may not be delivered through the remote plasma unit, which may protect the unit from damage and may be beneficial for the specific processes being performed. It may allow adjustment of the plasma power to provide a specific dissociation. Other embodiments configured to produce plasma effluents of different etchants may be lined with different materials that may be inert to such precursors or combinations of precursors.

In operation 910, plasma effluents of the fluorine-containing precursor may flow into an adapter coupled with a remote plasma unit. In operation 915, a hydrogen containing precursor may be flowed into the adapter. In operation 920, the adapter may be configured to provide a mixture of a fluorine-containing precursor and a hydrogen-containing precursor within the adapter to produce a first mixture. In operation 925, the first mixture may flow from the adapter into the mixing manifold. In operation 930, a third precursor may flow into the mixing manifold. The third precursor may comprise an additional hydrogen containing precursor, an additional halogen containing precursor, or other combinations of precursors. The mixing manifold can be configured to perform a second stage of mixing of the first mixture and the third precursor, which can produce a second mixture 935.

Subsequently, a second mixture comprising all three precursors can be transferred from the mixing manifold to the semiconductor processing chamber. Additional components described elsewhere can be used to control the delivery and distribution of etchants, as previously discussed. It should be understood that the identified precursors are only examples of precursors suitable for use in the described chamber. The chambers and materials discussed throughout this disclosure may be used in any number of different processing operations that may benefit from separating the precursors and mixing them prior to delivery into the processing chamber.

In the preceding description, for purposes of explanation, a number of details have been listed to provide an understanding of various embodiments of the present technology. However, it will be apparent to those skilled in the art that certain embodiments may be practiced without some of these details, or with additional details.

While some embodiments have been disclosed, it will be appreciated by those skilled in the art that various modifications, alternative configurations, and equivalents may be used without departing from the spirit of the embodiments. Additionally, in order to avoid unnecessarily obscuring the present technology, a number of well-known processes and elements have not been described. Accordingly, the above description should not be regarded as limiting the scope of the present technology.

Where a range of values is provided, it should be understood that, unless the context clearly dictates otherwise, each intermediate value is also specifically disclosed, between the upper and lower limits of the range, to the smallest fraction of the unit of the lower limit. do. Any narrower range between any recited or not recited intermediate values of the recited range and any other recited or intermediate value of the recited range is included. The upper and lower limits of such smaller ranges may be independently included or excluded from that range, and each range in which the smaller ranges include either or both of the limits, or not both It is also included within the present technology subject to any specifically excluded limits of the stated range. Where the stated range includes either or both of the limits, ranges excluding either or both of those included limits are also included.

As used herein and in the appended claims, the singular form includes the plural referent unless the context clearly dictates otherwise. Thus, for example, reference to “layer” includes a plurality of such layers, and reference to “precursor” includes reference to one or more precursors and equivalents thereof known to those skilled in the art. And so on.

In addition, the word "comprising", when used in this specification and in the claims below, is intended to specify the presence of the recited features, integers, elements, or acts, but is one or more other features, integers. The addition or presence of elements, components, operations, actions, or groups is not excluded.

Claims (20)

As a component of a semiconductor processing system,
A mixing manifold, wherein the mixing manifold is characterized by a first end and a second end opposite the first end, the mixing manifold defining a central channel through the mixing manifold, the mixing manifold A fold defines a port along the outside of the mixing manifold, the port fluidly coupled with a first trench defined within the first end of the mixing manifold, and the first trench has an outer radius and a first inner A semiconductor processing system component, characterized by an inner radius at the sidewall, wherein the first trench provides fluid access to the central channel through the first inner sidewall. The method of claim 1,
The mixing manifold further comprises a second trench defined within the first end of the mixing manifold, wherein the second trench is located radially outward from the first trench, and the port is in fluid communication with the second trench. Combined into, semiconductor processing system components. The method of claim 2,
The second trench is characterized by an inner radius at a second inner sidewall, and the second inner sidewall further defines an outer radius of the first trench. The method of claim 3,
The second inner sidewall provides fluid access to the first trench and defines a plurality of apertures defined through the second inner sidewall. The method of claim 4,
Wherein the second inner sidewall defines two apertures through the second inner sidewall. The method of claim 5,
The first inner sidewall defines a plurality of apertures defined through the first inner sidewall, and each aperture of the plurality of apertures defined through the second inner sidewall comprises the first inner sidewall. And radially offset from each aperture of the plurality of apertures defined through. The method of claim 5,
Wherein the two apertures are defined through the second inner sidewall at opposite ends of diameter through the second inner sidewall. The method of claim 7,
The port is defined equidistantly between the two apertures defined through the second inner sidewall. The method of claim 1,
The first inner sidewall provides fluid access to the central channel and defines a plurality of apertures defined through the first inner sidewall. The method of claim 9,
A semiconductor processing system component, wherein at least three apertures are defined through the first inner sidewall, and the apertures are distributed equidistantly with respect to the first inner sidewall. The method of claim 9,
Wherein the first inner sidewall includes an edge chamfered from the first end of the mixing manifold. The method of claim 11,
Wherein the plurality of apertures are defined through the chamfered edge of the first inner sidewall. The method of claim 12,
The plurality of apertures are defined at an angle through the first inner sidewall extending from the first end of the mixing manifold in a direction toward the central channel. The method of claim 1,
Wherein the mixing manifold comprises nickel. The method of claim 14,
Wherein the nickel is nickel plated. As a component of a semiconductor processing system,
A mixing manifold, wherein the mixing manifold is characterized by a first end and a second end opposite the first end, the mixing manifold having a flange at the second end of the mixing manifold. Wherein the mixing manifold defines a central channel through the mixing manifold, the mixing manifold defines a port along the outside of the mixing manifold, the port being the first end of the mixing manifold Fluidly coupled with a first trench defined within, wherein the first trench is specified by an outer radius and an inner radius at the first inner sidewall, and the first trench into the central channel through the first inner sidewall. Providing fluid access, the mixing manifold further comprising a second trench defined within a first end of the mixing manifold, the second trench located radially outward from the first trench, and the port A semiconductor processing system component fluidly coupled with the second trench. The method of claim 16,
The second trench is characterized by an inner radius at a second inner sidewall, and the second inner sidewall further defines an outer radius of the first trench. The method of claim 17,
The second inner sidewall provides fluid access to the first trench and defines a plurality of apertures defined through the second inner sidewall. The method of claim 18,
The second inner sidewall defines two apertures passing through the second inner sidewall, the first inner sidewall defines a plurality of apertures defined through the first inner sidewall, and the second inner sidewall Wherein each aperture of the plurality of apertures defined through is radially offset from each aperture of the plurality of apertures defined through the first inner sidewall. As a component of a semiconductor processing system,
A single-piece mixing manifold, wherein the mixing manifold is characterized by a first end and a second end opposite the first end, the mixing manifold being centrally passed through the mixing manifold. Defining a channel, wherein the mixing manifold defines a port along the exterior of the mixing manifold, the port fluidly coupled with a first trench defined within the first end of the mixing manifold, the first The trench is characterized by an outer radius and an inner radius at a first inner sidewall, the first trench provides fluid access to the central channel through the first inner sidewall, and the first inner sidewall is the central channel Providing fluid access to and defining a plurality of apertures defined through the first inner sidewall, at least three apertures defined through the first inner sidewall, the apertures being defined with respect to the first inner sidewall Components of a semiconductor processing system, distributed equidistantly.

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