KR20210012959A - Novel compound and organic light emitting device comprising the same - Google Patents
Novel compound and organic light emitting device comprising the same Download PDFInfo
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- KR20210012959A KR20210012959A KR1020200091942A KR20200091942A KR20210012959A KR 20210012959 A KR20210012959 A KR 20210012959A KR 1020200091942 A KR1020200091942 A KR 1020200091942A KR 20200091942 A KR20200091942 A KR 20200091942A KR 20210012959 A KR20210012959 A KR 20210012959A
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 167
- 239000011368 organic material Substances 0.000 claims abstract description 37
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- 229910052805 deuterium Inorganic materials 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 7
- 125000001624 naphthyl group Chemical group 0.000 claims description 5
- 125000001072 heteroaryl group Chemical group 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 125000003960 triphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C3=CC=CC=C3C12)* 0.000 claims description 4
- 125000005842 heteroatom Chemical group 0.000 claims description 3
- 125000004556 carbazol-9-yl group Chemical group C1=CC=CC=2C3=CC=CC=C3N(C12)* 0.000 claims description 2
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- MXQOYLRVSVOCQT-UHFFFAOYSA-N palladium;tritert-butylphosphane Chemical compound [Pd].CC(C)(C)P(C(C)(C)C)C(C)(C)C.CC(C)(C)P(C(C)(C)C)C(C)(C)C MXQOYLRVSVOCQT-UHFFFAOYSA-N 0.000 description 42
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- 125000003538 pentan-3-yl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 150000002987 phenanthrenes Chemical class 0.000 description 1
- 150000005041 phenanthrolines Chemical class 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 125000001484 phenothiazinyl group Chemical group C1(=CC=CC=2SC3=CC=CC=C3NC12)* 0.000 description 1
- XPPWLXNXHSNMKC-UHFFFAOYSA-N phenylboron Chemical group [B]C1=CC=CC=C1 XPPWLXNXHSNMKC-UHFFFAOYSA-N 0.000 description 1
- 125000004592 phthalazinyl group Chemical group C1(=NN=CC2=CC=CC=C12)* 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical group C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 229940083082 pyrimidine derivative acting on arteriolar smooth muscle Drugs 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 125000002294 quinazolinyl group Chemical group N1=C(N=CC2=CC=CC=C12)* 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000003548 sec-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 150000003413 spiro compounds Chemical class 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000003011 styrenyl group Chemical group [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- JLBRGNFGBDNNSF-UHFFFAOYSA-N tert-butyl(dimethyl)borane Chemical group CB(C)C(C)(C)C JLBRGNFGBDNNSF-UHFFFAOYSA-N 0.000 description 1
- 125000001113 thiadiazolyl group Chemical group 0.000 description 1
- 125000000335 thiazolyl group Chemical group 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- KWQNQSDKCINQQP-UHFFFAOYSA-K tri(quinolin-8-yloxy)gallane Chemical compound C1=CN=C2C(O[Ga](OC=3C4=NC=CC=C4C=CC=3)OC=3C4=NC=CC=C4C=CC=3)=CC=CC2=C1 KWQNQSDKCINQQP-UHFFFAOYSA-K 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical group CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical group CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- MXSVLWZRHLXFKH-UHFFFAOYSA-N triphenylborane Chemical group C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1 MXSVLWZRHLXFKH-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
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Abstract
Description
본 발명은 신규한 화합물 및 이를 이용한 유기발광 소자에 관한 것이다. The present invention relates to a novel compound and an organic light emitting device using the same.
일반적으로 유기 발광 현상이란 유기 물질을 이용하여 전기에너지를 빛에너지로 전환시켜주는 현상을 말한다. 유기 발광 현상을 이용하는 유기 발광 소자는 넓은 시야각, 우수한 콘트라스트, 빠른 응답 시간을 가지며, 휘도, 구동 전압 및 응답 속도 특성이 우수하여 많은 연구가 진행되고 있다. In general, the organic light emission phenomenon refers to a phenomenon in which electrical energy is converted into light energy using an organic material. An organic light-emitting device using the organic light-emitting phenomenon has a wide viewing angle, excellent contrast, and fast response time, and has excellent luminance, driving voltage, and response speed characteristics, and thus many studies are being conducted.
유기 발광 소자는 일반적으로 양극과 음극 및 상기 양극과 음극 사이에 유기물 층을 포함하는 구조를 가진다. 상기 유기물 층은 유기 발광 소자의 효율과 안정성을 높이기 위하여 각기 다른 물질로 구성된 다층의 구조로 이루어진 경우가 많으며, 예컨대 정공주입층, 정공수송층, 발광층, 전자수송층, 전자주입층 등으로 이루어질 수 있다. 이러한 유기 발광 소자의 구조에서 두 전극 사이에 전압을 걸어주게 되면 양극에서는 정공이, 음극에서는 전자가 유기물층에 주입되게 되고, 주입된 정공과 전자가 만났을 때 엑시톤(exciton)이 형성되며, 이 엑시톤이 다시 바닥상태로 떨어질 때 빛이 나게 된다. The organic light emitting device generally has a structure including an anode and a cathode, and an organic material layer between the anode and the cathode. The organic material layer is often made of a multi-layered structure composed of different materials in order to increase the efficiency and stability of the organic light emitting device.For example, it may be formed of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and the like. In the structure of such an organic light-emitting device, when a voltage is applied between the two electrodes, holes are injected from the anode and electrons from the cathode are injected into the organic material layer, and excitons are formed when the injected holes and electrons meet. It glows when it falls back to the ground.
상기와 같은 유기 발광 소자에 사용되는 유기물에 대하여 새로운 재료의 개발이 지속적으로 요구되고 있다.Development of new materials for organic materials used in organic light emitting devices as described above is continuously required.
본 발명은 신규한 화합물 및 이를 포함하는 유기 발광 소자에 관한 것이다. The present invention relates to a novel compound and an organic light emitting device comprising the same.
본 발명은 하기 화학식 1로 표시되는 화합물을 제공한다:The present invention provides a compound represented by the following formula 1:
[화학식 1][Formula 1]
상기 화학식 1에서,In Formula 1,
R1 내지 R4는 각각 독립적으로 수소 또는 중수소이거나, 이들 중 인접한 두 개가 서로 결합하여 치환 또는 비치환된 C6-30 방향족 고리를 형성하고,R 1 to R 4 are each independently hydrogen or deuterium, or two adjacent two of them combine with each other to form a substituted or unsubstituted C 6-30 aromatic ring,
R5 및 R6는 각각 독립적으로 수소, 또는 중수소이고,R 5 and R 6 are each independently hydrogen or deuterium,
m은 0 내지 5의 정수이고,m is an integer from 0 to 5,
n은 0 내지 6의 정수이고,n is an integer from 0 to 6,
X1 내지 X3는 각각 독립적으로, N 또는 CH이고, 단, 이들 중 둘 이상이 N이고,X 1 to X 3 are each independently N or CH, provided that at least two of them are N,
Ar1 및 Ar2는 각각 독립적으로, 치환 또는 비치환된 C6-60 아릴 또는 N, O 및 S로 구성되는 군으로부터 선택되는 하나 이상의 헤테로 원자를 포함하는 치환 또는 비치환된 C5-60 헤테로아릴이고, Ar 1 and Ar 2 are each independently a substituted or unsubstituted C 6-60 Aryl or substituted or unsubstituted C 5-60 containing at least one hetero atom selected from the group consisting of N, O and S Heteroaryl,
Ar3는 치환 또는 비치환된 C6-60 아릴이다.Ar 3 is substituted or unsubstituted C 6-60 It is aryl.
또한, 본 발명은 제1 전극; 상기 제1 전극과 대향하여 구비된 제2 전극; 및 상기 제1 전극과 상기 제2 전극 사이에 구비된 1층 이상의 유기물층을 포함하는 유기 발광 소자로서, 상기 유기물층 중 1층 이상은 전술한 본 발명의 화합물을 포함하는 유기 발광 소자를 제공한다.In addition, the present invention is a first electrode; A second electrode provided to face the first electrode; And one or more organic material layers provided between the first electrode and the second electrode, wherein at least one of the organic material layers comprises the compound of the present invention.
상술한 화학식 1로 표시되는 화합물은 유기 발광 소자의 유기물 층의 재료로서 사용될 수 있으며, 유기 발광 소자에서 효율의 향상, 낮은 구동전압 및/또는 수명 특성을 향상시킬 수 있다. 특히, 상술한 화학식 1로 표시되는 화합물은 정공주입, 정공수송, 정공주입 및 수송, 발광, 전자수송, 또는 전자주입 재료로 사용될 수 있다.The compound represented by Chemical Formula 1 may be used as a material for an organic material layer of an organic light-emitting device, and may improve efficiency, low driving voltage, and/or lifetime characteristics in the organic light-emitting device. In particular, the compound represented by Formula 1 may be used as a hole injection, hole transport, hole injection and transport, light emission, electron transport, or electron injection material.
도 1은 기판(1), 양극(2), 정공수송층(3), 발광층(4), 전자주입 및 수송층(5) 및 음극(6)으로 이루어진 유기 발광 소자의 예를 도시한 것이다.
도 2는 기판(1), 양극(2), 정공주입층(7), 정공수송층(3), 전자억제층(8), 발광층(4), 정공억제층(9), 전자주입 및 수송층(5) 및 음극(6)으로 이루어진 유기 발광 소자의 예를 도시한 것이다. 1 shows an example of an organic light-emitting device comprising a
2 shows a
이하, 본 발명의 이해를 돕기 위하여 보다 상세히 설명한다.Hereinafter, it will be described in more detail to aid the understanding of the present invention.
(용어의 설명)(Explanation of terms)
본 명세서에서, 및 는 는 다른 치환기에 연결되는 결합을 의미한다. In this specification, And Means a bond connected to another substituent.
본 명세서에서 "치환 또는 비치환된" 이라는 용어는 중수소(D); 할로겐기; 니트릴기; 니트로기; 히드록시기; 카보닐기; 에스테르기; 이미드기; 아미노기; 포스핀옥사이드기; 알콕시기; 아릴옥시기; 알킬티옥시기; 아릴티옥시기; 알킬술폭시기; 아릴술폭시기; 실릴기; 붕소기; 알킬기; 사이클로알킬기; 알케닐기; 아릴기; 아르알킬기; 아르알케닐기; 알킬아릴기; 알킬아민기; 아랄킬아민기; 헤테로아릴아민기; 아릴아민기; 아릴포스핀기; 또는 N, O 및 S 원자 중 1개 이상을 포함하는 헤테로고리기로 이루어진 군에서 선택된 1개 이상의 치환기로 치환 또는 비치환되거나, 상기 예시된 치환기 중 2 이상의 치환기가 연결된 치환 또는 비치환된 것을 의미한다. 예컨대, "2 이상의 치환기가 연결된 치환기"는 비페닐기일 수 있다. 즉, 비페닐기는 아릴기일 수도 있고, 2개의 페닐기가 연결된 치환기로 해석될 수 있다.In the present specification, the term "substituted or unsubstituted" refers to deuterium (D); Halogen group; Nitrile group; Nitro group; Hydroxy group; Carbonyl group; Ester group; Imide group; Amino group; Phosphine oxide group; Alkoxy group; Aryloxy group; Alkyl thioxy group; Arylthioxy group; Alkyl sulfoxy group; Arylsulfoxy group; Silyl group; Boron group; Alkyl group; Cycloalkyl group; Alkenyl group; Aryl group; Aralkyl group; Aralkenyl group; Alkylaryl group; Alkylamine group; Aralkylamine group; Heteroarylamine group; Arylamine group; Arylphosphine group; Or it means a substituted or unsubstituted substituted or unsubstituted with one or more substituents selected from the group consisting of a heterocyclic group containing one or more of N, O and S atoms, or linked with two or more substituents among the above-exemplified substituents. . For example, "a substituent to which two or more substituents are connected" may be a biphenyl group. That is, the biphenyl group may be an aryl group or may be interpreted as a substituent to which two phenyl groups are connected.
본 명세서에서 카보닐기의 탄소수는 특별히 한정되지 않으나, 탄소수 1 내지 40인 것이 바람직하다. 구체적으로 하기와 같은 구조의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the number of carbon atoms of the carbonyl group is not particularly limited, but it is preferably 1 to 40 carbon atoms. Specifically, it may be a compound having the following structure, but is not limited thereto.
본 명세서에 있어서, 에스테르기는 에스테르기의 산소가 탄소수 1 내지 25의 직쇄, 분지쇄 또는 고리쇄 알킬기 또는 탄소수 6 내지 25의 아릴기로 치환될 수 있다. 구체적으로, 하기 구조식의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the ester group may be substituted with an oxygen of the ester group with a straight chain, branched or cyclic alkyl group having 1 to 25 carbon atoms or an aryl group having 6 to 25 carbon atoms. Specifically, it may be a compound of the following structural formula, but is not limited thereto.
본 명세서에 있어서, 이미드기의 탄소수는 특별히 한정되지 않으나, 탄소수 1 내지 25인 것이 바람직하다. 구체적으로 하기와 같은 구조의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the number of carbon atoms of the imide group is not particularly limited, but it is preferably 1 to 25 carbon atoms. Specifically, it may be a compound having the following structure, but is not limited thereto.
본 명세서에 있어서, 실릴기는 구체적으로 트리메틸실릴기, 트리에틸실릴기, t-부틸디메틸실릴기, 비닐디메틸실릴기, 프로필디메틸실릴기, 트리페닐실릴기, 디페닐실릴기, 페닐실릴기 등이 있으나 이에 한정되지 않는다. In the present specification, the silyl group is specifically trimethylsilyl group, triethylsilyl group, t-butyldimethylsilyl group, vinyldimethylsilyl group, propyldimethylsilyl group, triphenylsilyl group, diphenylsilyl group, phenylsilyl group, etc. However, it is not limited thereto.
본 명세서에 있어서, 붕소기는 구체적으로 트리메틸붕소기, 트리에틸붕소기, t-부틸디메틸붕소기, 트리페닐붕소기, 페닐붕소기 등이 있으나 이에 한정되지 않는다.In the present specification, the boron group specifically includes a trimethyl boron group, a triethyl boron group, a t-butyldimethyl boron group, a triphenyl boron group, and a phenyl boron group, but is not limited thereto.
본 명세서에 있어서, 할로겐기의 예로는 불소, 염소, 브롬 또는 요오드가 있다.In the present specification, examples of the halogen group include fluorine, chlorine, bromine or iodine.
본 명세서에 있어서, 상기 알킬기는 직쇄 또는 분지쇄일 수 있고, 탄소수는 특별히 한정되지 않으나 1 내지 40인 것이 바람직하다. 일 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 20이다. 또 하나의 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 10이다. 또 하나의 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 6이다. 알킬기의 구체적인 예로는 메틸, 에틸, 프로필, n-프로필, 이소프로필, 부틸, n-부틸, 이소부틸, tert-부틸, sec-부틸, 1-메틸-부틸, 1-에틸-부틸, 펜틸, n-펜틸, 이소펜틸, 네오펜틸, tert-펜틸, 헥실, n-헥실, 1-메틸펜틸, 2-메틸펜틸, 4-메틸-2-펜틸, 3,3-디메틸부틸, 2-에틸부틸, 헵틸, n-헵틸, 1-메틸헥실, 사이클로펜틸메틸,사이클로헥틸메틸, 옥틸, n-옥틸, tert-옥틸, 1-메틸헵틸, 2-에틸헥실, 2-프로필펜틸, n-노닐, 2,2-디메틸헵틸, 1-에틸-프로필, 1,1-디메틸-프로필, 이소헥실, 2-메틸펜틸, 4-메틸헥실, 5-메틸헥실 등이 있으나, 이들에 한정되지 않는다.In the present specification, the alkyl group may be a linear or branched chain, and the number of carbon atoms is not particularly limited, but is preferably 1 to 40. According to an exemplary embodiment, the alkyl group has 1 to 20 carbon atoms. According to another exemplary embodiment, the alkyl group has 1 to 10 carbon atoms. According to another exemplary embodiment, the alkyl group has 1 to 6 carbon atoms. Specific examples of the alkyl group include methyl, ethyl, propyl, n-propyl, isopropyl, butyl, n-butyl, isobutyl, tert-butyl, sec-butyl, 1-methyl-butyl, 1-ethyl-butyl, pentyl, n -Pentyl, isopentyl, neopentyl, tert-pentyl, hexyl, n-hexyl, 1-methylpentyl, 2-methylpentyl, 4-methyl-2-pentyl, 3,3-dimethylbutyl, 2-ethylbutyl, heptyl , n-heptyl, 1-methylhexyl, cyclopentylmethyl, cycloheptylmethyl, octyl, n-octyl, tert-octyl, 1-methylheptyl, 2-ethylhexyl, 2-propylpentyl, n-nonyl, 2,2 -Dimethylheptyl, 1-ethyl-propyl, 1,1-dimethyl-propyl, isohexyl, 2-methylpentyl, 4-methylhexyl, 5-methylhexyl, and the like, but are not limited thereto.
본 명세서에 있어서, 상기 알케닐기는 직쇄 또는 분지쇄일 수 있고, 탄소수는 특별히 한정되지 않으나, 2 내지 40인 것이 바람직하다. 일 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 20이다. 또 하나의 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 10이다. 또 하나의 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 6이다. 구체적인 예로는 비닐, 1-프로페닐, 이소프로페닐, 1-부테닐, 2-부테닐, 3-부테닐, 1-펜테닐, 2-펜테닐, 3-펜테닐, 3-메틸-1-부테닐, 1,3-부타디에닐, 알릴, 1-페닐비닐-1-일, 2-페닐비닐-1-일, 2,2-디페닐비닐-1-일, 2-페닐-2-(나프틸-1-일)비닐-1-일, 2,2-비스(디페닐-1-일)비닐-1-일, 스틸베닐기, 스티레닐기 등이 있으나 이들에 한정되지 않는다.In the present specification, the alkenyl group may be a linear or branched chain, and the number of carbon atoms is not particularly limited, but is preferably 2 to 40. According to an exemplary embodiment, the alkenyl group has 2 to 20 carbon atoms. According to another exemplary embodiment, the alkenyl group has 2 to 10 carbon atoms. According to another exemplary embodiment, the alkenyl group has 2 to 6 carbon atoms. Specific examples include vinyl, 1-propenyl, isopropenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1-pentenyl, 2-pentenyl, 3-pentenyl, 3-methyl-1- Butenyl, 1,3-butadienyl, allyl, 1-phenylvinyl-1-yl, 2-phenylvinyl-1-yl, 2,2-diphenylvinyl-1-yl, 2-phenyl-2-( Naphthyl-1-yl)vinyl-1-yl, 2,2-bis(diphenyl-1-yl)vinyl-1-yl, stilbenyl group, styrenyl group, and the like, but are not limited thereto.
본 명세서에 있어서, 사이클로알킬기는 특별히 한정되지 않으나, 탄소수 3 내지 60인 것이 바람직하며, 일 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 30이다. 또 하나의 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 20이다. 또 하나의 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 6이다. 구체적으로 사이클로프로필, 사이클로부틸, 사이클로펜틸, 3-메틸사이클로펜틸, 2,3-디메틸사이클로펜틸, 사이클로헥실, 3-메틸사이클로헥실, 4-메틸사이클로헥실, 2,3-디메틸사이클로헥실, 3,4,5-트리메틸사이클로헥실, 4-tert-부틸사이클로헥실, 사이클로헵틸, 사이클로옥틸 등이 있으나, 이에 한정되지 않는다.In the present specification, the cycloalkyl group is not particularly limited, but is preferably 3 to 60 carbon atoms, and according to an exemplary embodiment, the cycloalkyl group has 3 to 30 carbon atoms. According to another exemplary embodiment, the cycloalkyl group has 3 to 20 carbon atoms. According to another exemplary embodiment, the cycloalkyl group has 3 to 6 carbon atoms. Specifically, cyclopropyl, cyclobutyl, cyclopentyl, 3-methylcyclopentyl, 2,3-dimethylcyclopentyl, cyclohexyl, 3-methylcyclohexyl, 4-methylcyclohexyl, 2,3-dimethylcyclohexyl, 3, 4,5-trimethylcyclohexyl, 4-tert-butylcyclohexyl, cycloheptyl, cyclooctyl, and the like, but are not limited thereto.
본 명세서에 있어서, 아릴기는 특별히 한정되지 않으나 탄소수 6 내지 60인 것이 바람직하며, 단환식 아릴기 또는 다환식 아릴기일 수 있다. 일 실시상태에 따르면, 상기 아릴기의 탄소수는 6 내지 30이다. 일 실시상태에 따르면, 상기 아릴기의 탄소수는 6 내지 20이다. 상기 아릴기가 단환식 아릴기로는 페닐기, 바이페닐기, 터페닐기 등이 될 수 있으나, 이에 한정되는 것은 아니다. 상기 다환식 아릴기로는 나프틸기, 안트라세닐기, 페난트릴기, 파이레닐기, 페릴레닐기, 크라이세닐기, 플루오레닐기 등이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the aryl group is not particularly limited, but is preferably 6 to 60 carbon atoms, and may be a monocyclic aryl group or a polycyclic aryl group. According to an exemplary embodiment, the aryl group has 6 to 30 carbon atoms. According to an exemplary embodiment, the aryl group has 6 to 20 carbon atoms. The aryl group may be a phenyl group, a biphenyl group, or a terphenyl group, but the monocyclic aryl group is not limited thereto. The polycyclic aryl group may be a naphthyl group, an anthracenyl group, a phenanthryl group, a pyrenyl group, a perylenyl group, a chrysenyl group, a fluorenyl group, and the like, but is not limited thereto.
본 명세서에 있어서, 플루오레닐기는 치환될 수 있고, 치환기 2개가 서로 결합하여 스피로 구조를 형성할 수 있다. 상기 플루오레닐기가 치환되는 경우, 등이 될 수 있다. 다만, 이에 한정되는 것은 아니다.In the present specification, the fluorenyl group may be substituted, and two substituents may be bonded to each other to form a spiro structure. When the fluorenyl group is substituted, Etc. However, it is not limited thereto.
본 명세서에 있어서, 헤테로고리기는 이종 원소로 O, N, Si 및 S 중 1개 이상을 포함하는 헤테로고리기로서, 탄소수는 특별히 한정되지 않으나, 탄소수 2 내지 60인 것이 바람직하다. 헤테로고리기의 예로는 티오펜기, 퓨란기, 피롤기, 이미다졸기, 티아졸기, 옥사졸기, 옥사디아졸기, 트리아졸기, 피리딜기, 비피리딜기, 피리미딜기, 트리아진기, 아크리딜기, 피리다진기, 피라지닐기, 퀴놀리닐기, 퀴나졸린기, 퀴녹살리닐기, 프탈라지닐기, 피리도 피리미디닐기, 피리도 피라지닐기, 피라지노 피라지닐기, 이소퀴놀린기, 인돌기, 카바졸기, 벤조옥사졸기, 벤조이미다졸기, 벤조티아졸기, 벤조카바졸기, 벤조티오펜기, 디벤조티오펜기, 벤조퓨라닐기, 페난쓰롤린기(phenanthroline), 티아졸릴기, 이소옥사졸릴기, 옥사디아졸릴기, 티아디아졸릴기, 벤조티아졸릴기, 페노티아지닐기 및 디벤조퓨라닐기 등이 있으나, 이들에만 한정되는 것은 아니다.In the present specification, the heterocyclic group is a heterocyclic group including at least one of O, N, Si and S as a heterogeneous element, and the number of carbons is not particularly limited, but it is preferably 2 to 60 carbon atoms. Examples of the heterocyclic group include thiophene group, furan group, pyrrole group, imidazole group, thiazole group, oxazole group, oxadiazole group, triazole group, pyridyl group, bipyridyl group, pyrimidyl group, triazine group, acridyl group , Pyridazine group, pyrazinyl group, quinolinyl group, quinazoline group, quinoxalinyl group, phthalazinyl group, pyrido pyrimidinyl group, pyrido pyrazinyl group, pyrazino pyrazinyl group, isoquinoline group, indole group , Carbazole group, benzoxazole group, benzoimidazole group, benzothiazole group, benzocarbazole group, benzothiophene group, dibenzothiophene group, benzofuranyl group, phenanthroline group, thiazolyl group, isoxazolyl Group, oxadiazolyl group, thiadiazolyl group, benzothiazolyl group, phenothiazinyl group, dibenzofuranyl group, and the like, but are not limited thereto.
본 명세서에 있어서, 아르알킬기, 아르알케닐기, 알킬아릴기, 아릴아민기 중의 아릴기는 전술한 아릴기의 예시와 같다. 본 명세서에 있어서, 아르알킬기, 알킬아릴기, 알킬아민기 중 알킬기는 전술한 알킬기의 예시와 같다. 본 명세서에 있어서, 헤테로아릴아민 중 헤테로아릴은 전술한 헤테로고리기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 아르알케닐기 중 알케닐기는 전술한 알케닐기의 예시와 같다. 본 명세서에 있어서, 아릴렌은 2가기인 것을 제외하고는 전술한 아릴기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 헤테로아릴렌은 2가기인 것을 제외하고는 전술한 헤테로고리기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 탄화수소 고리는 1가기가 아니고, 2개의 치환기가 결합하여 형성한 것을 제외하고는 전술한 아릴기 또는 사이클로알킬기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 헤테로고리는 1가기가 아니고, 2개의 치환기가 결합하여 형성한 것을 제외하고는 전술한 헤테로고리기에 관한 설명이 적용될 수 있다.In the present specification, the aryl group among the aralkyl group, aralkenyl group, alkylaryl group, and arylamine group is the same as the example of the aryl group described above. In the present specification, the alkyl group among the aralkyl group, the alkylaryl group and the alkylamine group is the same as the example of the aforementioned alkyl group. In the present specification, for heteroaryl among heteroarylamines, the description of the aforementioned heterocyclic group may be applied. In the present specification, the alkenyl group of the aralkenyl group is the same as the example of the alkenyl group described above. In the present specification, the description of the aryl group described above may be applied except that the arylene is a divalent group. In the present specification, the description of the aforementioned heterocyclic group may be applied except that the heteroarylene is a divalent group. In the present specification, the hydrocarbon ring is not a monovalent group, and the description of the aryl group or the cycloalkyl group described above may be applied except that the hydrocarbon ring is formed by bonding of two substituents. In the present specification, the heterocycle is not a monovalent group, and the description of the above-described heterocyclic group may be applied, except that two substituents are bonded to each other.
(화합물)(compound)
본 발명은 상기 화학식 1로 표시되는 화합물을 제공한다. 화학식 1로 표시되는 화합물은 벤조퓨란 코어의 1번 위치에 트리아진계 치환기를 포함하고, 7번 위치에 벤조카바졸계 치환기() 및 8번 위치에 추가 아릴기를 포함하는 구조를 가지며, 상기 구조에 의해 전자와 정공에 대한 안정도가 높으며, 호스트 화합물로 적용 시 도판트로의 에너지 전달이 용이하다. 이에 따라, 유기 발광 소자에 발광층 화합물로 채용 시 저구동 전압, 고효율 및 장수명의 특성을 모두 향상시킬 수 있다. 화학식 1로 표시되는 화합물은 구체적으로 하기와 같다:The present invention provides a compound represented by
[화학식 1][Formula 1]
상기 화학식 1에서,In
R1 내지 R4는 각각 독립적으로 수소 또는 중수소이거나, 이들 중 인접한 두 개가 서로 결합하여 치환 또는 비치환된 C6-30 방향족 고리를 형성하고,R 1 to R 4 are each independently hydrogen or deuterium, or two adjacent two of them combine with each other to form a substituted or unsubstituted C 6-30 aromatic ring,
R5 및 R6는 각각 독립적으로 수소, 또는 중수소이고,R 5 and R 6 are each independently hydrogen or deuterium,
m은 0 내지 5의 정수이고,m is an integer from 0 to 5,
n은 0 내지 6의 정수이고,n is an integer from 0 to 6,
X1 내지 X3는 각각 독립적으로, N 또는 CH이고, 단, 이들 중 둘 이상이 N이고,X 1 to X 3 are each independently N or CH, provided that at least two of them are N,
Ar1 및 Ar2는 각각 독립적으로, 치환 또는 비치환된 C6-60 아릴 또는 N, O 및 S로 구성되는 군으로부터 선택되는 하나 이상의 헤테로 원자를 포함하는 치환 또는 비치환된 C5-60 헤테로아릴이고, Ar 1 and Ar 2 are each independently a substituted or unsubstituted C 6-60 Aryl or substituted or unsubstituted C 5-60 containing at least one hetero atom selected from the group consisting of N, O and S Heteroaryl,
Ar3는 치환 또는 비치환된 C6-60 아릴이다.Ar 3 is substituted or unsubstituted C 6-60 It is aryl.
한편, 본원 화학식 1에서, R1 내지 R4는 각각 독립적으로, 수소, 중수소 또는 이들 중 인접한 두 개가 서로 결합하여 치환 또는 비치환된 C6-30 방향족 고리를 형성한다. Meanwhile, in
여기서, R1 내지 R4 중 인접한 두 개가 서로 결합한다는 것은, 예를 들어 R1 및 R2가 결합되거나, R2 및 R3이 결합되거나, R3 및 R4가 결합되어 치환 또는 비치환된 C6-30 방향족 고리를 형성하는 것을 의미한다. 바람직하게는, 이들은 결합하여 벤젠 고리를 형성한다.Here, the fact that two adjacent two of R 1 to R 4 are bonded to each other, for example, R 1 and R 2 are bonded, R 2 and R 3 are bonded, or R 3 and R 4 are bonded to each other to be substituted or unsubstituted It is meant to form a C 6-30 aromatic ring. Preferably, they combine to form a benzene ring.
바람직하게는, 화학식 1로 표시되는 화합물은 하기 화학식 1-1 내지 1-4 중 어느 하나로 표시된다:Preferably, the compound represented by
[화학식 1-1][Formula 1-1]
[화학식 1-2][Formula 1-2]
[화학식 1-3][Formula 1-3]
[화학식 1-4][Formula 1-4]
상기 화학식 1-1 내지 1-4에서, In Formulas 1-1 to 1-4,
R7는 각각 독립적으로, 수소 또는 중수소이고,Each R 7 is independently hydrogen or deuterium,
o는 0 내지 4의 정수이고,o is an integer from 0 to 4,
p는 0 내지 6의 정수이고,p is an integer from 0 to 6,
X1, X2, X3, Ar1, Ar2, Ar3, R5, R6, m 및 n은 화학식 1에서 정의한 바와 같다.X 1 , X 2 , X 3 , Ar 1 , Ar 2 , Ar 3 , R 5 , R 6 , m and n are as defined in
바람직하게는, X1 내지 X3는 모두 N이다.Preferably, all of X 1 to X 3 are N.
바람직하게는, Ar1 및 Ar2는 각각 독립적으로, 페닐, 비페닐릴, 터페닐릴, 나프틸, 나프틸페닐, 페닐나프틸, 페난트레닐, 트리페닐레닐, 디벤조퓨라닐, 디벤조티오페닐, 카바졸-9-일, 또는 9-페닐-9H-카바졸릴이다.Preferably, Ar 1 and Ar 2 are each independently, phenyl, biphenylyl, terphenylyl, naphthyl, naphthylphenyl, phenylnaphthyl, phenanthrenyl, triphenylenyl, dibenzofuranyl, dibenzo Thiophenyl, carbazol-9-yl, or 9-phenyl-9H-carbazolyl.
바람직하게는, Ar3는 페닐, 비페닐릴, 터페닐릴, 나프틸, 나프틸페닐, 페닐나프틸, 페난트레닐, 또는 트리페닐레닐이다.Preferably, Ar 3 is phenyl, biphenylyl, terphenylyl, naphthyl, naphthylphenyl, phenylnaphthyl, phenanthrenyl, or triphenylenyl.
바람직하게는, 상기 화학식 1로 표시되는 화합물은, 하기로 구성되는 군으로부터 선택되는 어느 하나이다:Preferably, the compound represented by
. .
상기 화학식 1로 표시되는 화합물은 하기 반응식 1과 같은 제조 방법으로 제조할 수 있다:The compound represented by
[반응식 1][Scheme 1]
상기 반응식에서, X는 각각 독립적으로, 할로겐이고, 바람직하게는 브로모, 또는 클로로이고, 다른 치환기에 대한 정의는 앞서 설명한 바와 같다.In the above reaction formula, each of X is independently halogen, preferably bromo or chloro, and the definition of other substituents is as described above.
구체적으로, 상기 화학식 1로 표시되는 화합물은 아민 치환 반응을 통해 출발물질 SM1 및 SM2가 결합하여 제조된다. 이러한 아민 치환 반응은 팔라듐 촉매와 염기의 존재 하에 수행하는 것이 바람직하다. 또한, 상기 아민 치환 반응을 위한 반응기는 적절히 변경될 수 있고, 화학식 1로 표시되는 화합물의 제조 방법은 후술할 제조예에서 보다 구체화될 수 있다.Specifically, the compound represented by
(유기 발광 소자)(Organic light emitting device)
한편, 본 발명은 상기 화학식 1로 표시되는 화합물을 포함하는 유기 발광 소자를 제공한다. 일례로, 본 발명은 제1 전극; 상기 제1 전극과 대향하여 구비된 제2 전극; 및 상기 제1 전극과 상기 제2 전극 사이에 구비된 1층 이상의 유기물층을 포함하는 유기 발광 소자로서, 상기 유기물층 중 1층 이상은 상기 화학식 1로 표시되는 화합물을 포함하는, 유기 발광 소자를 제공한다. Meanwhile, the present invention provides an organic light-emitting device including the compound represented by
본 발명의 유기 발광 소자의 유기물층은 단층 구조로 이루어질 수도 있으나, 2층 이상의 유기물층이 적층된 다층 구조로 이루어질 수 있다. 예컨대, 본 발명의 유기 발광 소자는 유기물층으로서 정공주입층, 정공수송층, 전자억제층, 발광층, 정공억제층, 전자수송층, 전자주입층 등을 포함하는 구조를 가질 수 있다. 그러나 유기 발광 소자의 구조는 이에 한정되지 않고 더 적은 수의 유기층을 포함할 수 있다.The organic material layer of the organic light emitting device of the present invention may have a single-layer structure, but may have a multilayer structure in which two or more organic material layers are stacked. For example, the organic light emitting device of the present invention may have a structure including a hole injection layer, a hole transport layer, an electron suppression layer, a light emitting layer, a hole suppression layer, an electron transport layer, an electron injection layer, and the like as an organic material layer. However, the structure of the organic light emitting device is not limited thereto and may include a smaller number of organic layers.
또한, 상기 유기물 층은 정공주입층, 정공수송층, 또는 정공 주입과 수송을 동시에 하는 층을 포함할 수 있고, 상기 정공주입층, 정공수송층, 또는 정공 주입과 수송을 동시에 하는 층은 상기 화학식 1로 표시되는 화합물을 포함한다. In addition, the organic material layer may include a hole injection layer, a hole transport layer, or a layer that simultaneously injects and transports holes, and the hole injection layer, a hole transport layer, or a layer that simultaneously injects and transports holes is represented by
또한, 상기 유기물층은 발광층을 포함할 수 있고, 상기 발광층은 상기 화학식 1로 표시되는 화합물을 포함한다. 바람직하게는, 상기 화학식 1로 표시되는 화합물은 발광층의 호스트 화합물로 사용된다. In addition, the organic material layer may include an emission layer, and the emission layer includes the compound represented by
본 발명의 유기 발광 소자의 유기물 층은 단층 구조로 이루어질 수도 있으나, 2층 이상의 유기물층이 적층된 다층 구조로 이루어질 수 있다. 예컨대, 본 발명의 유기 발광 소자는 유기물 층으로서 발광층 이외에, 상기 제1전극과 상기 발광층 사이의 정공주입층 및 정공수송층, 및 상기 발광층과 상기 제2전극 사이의 전자수송층 및 전자주입층을 더 포함하는 구조를 가질 수 있다. 그러나 유기 발광 소자의 구조는 이에 한정되지 않고 더 적은 수 또는 더 많은 수의 유기층을 포함할 수 있다.The organic material layer of the organic light emitting device of the present invention may have a single-layer structure, but may have a multilayer structure in which two or more organic material layers are stacked. For example, the organic light emitting device of the present invention further includes a hole injection layer and a hole transport layer between the first electrode and the emission layer, and an electron transport layer and an electron injection layer between the emission layer and the second electrode in addition to the emission layer as an organic material layer. It can have a structure to However, the structure of the organic light emitting device is not limited thereto and may include a smaller number or a larger number of organic layers.
또한, 본 발명에 따른 유기 발광 소자는, 상기 제1 전극이 양극이고 상기 제2 전극은 음극인, 기판 상에 양극, 1층 이상의 유기물층 및 음극이 순차적으로 적층된 구조(normal type)의 유기 발광 소자일 수 있다. 또한, 본 발명에 따른 유기 발광 소자는, 상기 제1 전극이 음극이고 상기 제2 전극은 양극인, 기판 상에 음극, 1층 이상의 유기물층 및 양극이 순차적으로 적층된 역방향 구조(inverted type)의 유기 발광 소자일 수 있다. 예컨대, 본 발명의 일실시예에 따른 유기 발광 소자의 구조는 도 1 및 2에 예시되어 있다.In addition, in the organic light emitting device according to the present invention, the first electrode is an anode and the second electrode is a cathode, and an anode, one or more organic material layers, and a cathode are sequentially stacked on a substrate (normal type). It can be a device. In addition, in the organic light emitting device according to the present invention, the first electrode is a cathode and the second electrode is an anode, and a cathode, one or more organic material layers, and an anode are sequentially stacked on a substrate. It may be a light emitting device. For example, the structure of an organic light-emitting device according to an embodiment of the present invention is illustrated in FIGS. 1 and 2.
도 1은 기판(1), 양극(2), 정공수송층(3), 발광층(4), 전자주입 및 수송층(5) 및 음극(6)으로 이루어진 유기 발광 소자의 예를 도시한 것이다. 이와 같은 구조에 있어서, 상기 화학식 1로 표시되는 화합물은 상기 발광층에 포함될 수 있다. 1 shows an example of an organic light-emitting device comprising a
도 2는 기판(1), 양극(2), 정공주입층(7), 정공수송층(3), 전자억제층(8), 발광층(4), 정공억제층(9), 전자주입 및 수송층(5) 및 음극(6)으로 이루어진 유기 발광 소자의 예를 도시한 것이다. 이와 같은 구조에 있어서, 상기 화학식 1로 표시되는 화합물은 상기 발광층에 포함될 수 있다.2 shows a
본 발명에 따른 유기 발광 소자는, 상기 유기물층 중 1층 이상이 상기 화학식 1로 표시되는 화합물을 포함하는 것을 제외하고는 당 기술분야에 알려져 있는 재료와 방법으로 제조될 수 있다. 또한, 상기 유기 발광 소자가 복수개의 유기물층을 포함하는 경우, 상기 유기물층은 동일한 물질 또는 다른 물질로 형성될 수 있다. The organic light-emitting device according to the present invention may be manufactured by materials and methods known in the art, except that at least one of the organic material layers includes the compound represented by
예컨대, 본 발명에 따른 유기 발광 소자는 기판 상에 제1 전극, 유기물층 및 제2 전극을 순차적으로 적층시켜 제조할 수 있다. 이때, 스퍼터링법(sputtering)이나 전자빔 증발법(e-beam evaporation)과 같은 PVD(physical Vapor Deposition)방법을 이용하여, 기판 상에 금속 또는 전도성을 가지는 금속 산화물 또는 이들의 합금을 증착시켜 양극을 형성하고, 그 위에 정공 주입층, 정공 수송층, 전자억제층, 발광층, 정공억제층 및 전자수송층을 포함하는 유기물층을 형성한 후, 그 위에 음극으로 사용할 수 있는 물질을 증착시켜 제조할 수 있다. 이와 같은 방법 외에도, 기판 상에 음극 물질부터 유기물층, 양극 물질을 차례로 증착시켜 유기 발광 소자를 만들 수 있다. For example, the organic light emitting device according to the present invention may be manufactured by sequentially stacking a first electrode, an organic material layer, and a second electrode on a substrate. At this time, using a PVD (physical vapor deposition) method such as sputtering or e-beam evaporation, the anode is formed by depositing a metal or a conductive metal oxide or an alloy thereof on the substrate. And, an organic material layer including a hole injection layer, a hole transport layer, an electron suppression layer, an emission layer, a hole suppression layer and an electron transport layer is formed thereon, and then a material that can be used as a cathode may be deposited thereon. In addition to this method, an organic light-emitting device may be manufactured by sequentially depositing a cathode material, an organic material layer, and an anode material on a substrate.
또한, 상기 화학식 1로 표시되는 화합물은 유기 발광 소자의 제조시 진공 증착법 뿐만 아니라 용액 도포법에 의하여 유기물층으로 형성될 수 있다. 여기서, 용액 도포법이라 함은 스핀 코팅, 딥코팅, 닥터 블레이딩, 잉크젯 프린팅, 스크린 프린팅, 스프레이법, 롤 코팅 등을 의미하지만, 이들만으로 한정되는 것은 아니다.In addition, the compound represented by
이와 같은 방법 외에도, 기판 상에 음극 물질로부터 유기물층, 양극 물질을 차례로 증착시켜 유기 발광 소자를 제조할 수 있다(WO 2003/012890). 다만, 제조 방법이 이에 한정되는 것은 아니다. In addition to such a method, an organic light-emitting device may be manufactured by sequentially depositing an organic material layer and an anode material from a cathode material on a substrate (WO 2003/012890). However, the manufacturing method is not limited thereto.
일례로, 상기 제1 전극은 양극이고, 상기 제2 전극은 음극이거나, 또는 상기 제1 전극은 음극이고, 상기 제2 전극은 양극이다.For example, the first electrode is an anode, the second electrode is a cathode, or the first electrode is a cathode, and the second electrode is an anode.
상기 양극 물질로는 통상 유기물층으로 정공 주입이 원활할 수 있도록 일함수가 큰 물질이 바람직하다. 상기 양극 물질의 구체적인 예로는 바나듐, 크롬, 구리, 아연, 금과 같은 금속 또는 이들의 합금; 아연 산화물, 인듐 산화물, 인듐주석 산화물(ITO), 인듐아연 산화물(IZO)과 같은 금속 산화물; ZnO:Al 또는 SnO2:Sb와 같은 금속과 산화물의 조합; 폴리(3-메틸티오펜), 폴리[3,4-(에틸렌-1,2-디옥시)티오펜](PEDOT), 폴리피롤 및 폴리아닐린과 같은 전도성 고분자 등이 있으나, 이들에만 한정되는 것은 아니다. As the anode material, a material having a large work function is preferable so that holes can be smoothly injected into the organic material layer. Specific examples of the cathode material include metals such as vanadium, chromium, copper, zinc, and gold, or alloys thereof; Metal oxides such as zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO); Combinations of metals and oxides such as ZnO:Al or SnO 2 :Sb; Poly(3-methylthiophene), poly[3,4-(ethylene-1,2-dioxy)thiophene] (PEDOT), conductive polymers such as polypyrrole and polyaniline, and the like, but are not limited thereto.
상기 음극 물질로는 통상 유기물층으로 전자 주입이 용이하도록 일함수가 작은 물질인 것이 바람직하다. 상기 음극 물질의 구체적인 예로는 마그네슘, 칼슘, 나트륨, 칼륨, 티타늄, 인듐, 이트륨, 리튬, 가돌리늄, 알루미늄, 은, 주석 및 납과 같은 금속 또는 이들의 합금; LiF/Al 또는 LiO2/Al과 같은 다층 구조 물질 등이 있으나, 이들에만 한정되는 것은 아니다. It is preferable that the cathode material is a material having a small work function to facilitate electron injection into the organic material layer. Specific examples of the negative electrode material include metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin, and lead, or alloys thereof; There are multi-layered materials such as LiF/Al or LiO 2 /Al, but are not limited thereto.
상기 정공주입층은 전극으로부터 정공을 주입하는 층으로, 정공 주입 물질로는 정공을 수송하는 능력을 가져 양극에서의 정공 주입효과, 발광층 또는 발광재료에 대하여 우수한 정공 주입 효과를 갖고, 발광층에서 생성된 여기자의 전자주입층 또는 전자주입재료에의 이동을 방지하며, 또한, 박막 형성 능력이 우수한 화합물이 바람직하다. 정공 주입 물질의 HOMO(highest occupied molecular orbital)가 양극 물질의 일함수와 주변 유기물층의 HOMO 사이인 것이 바람직하다. 정공 주입 물질의 구체적인 예로는 금속 포피린(porphyrin), 올리고티오펜, 아릴아민 계열의 유기물, 헥사니트릴헥사아자트리페닐렌 계열의 유기물, 퀴나크리돈(quinacridone)계열의 유기물, 페릴렌(perylene) 계열의 유기물, 안트라퀴논 및 폴리아닐린과 폴리티오펜 계열의 전도성 고분자 등이 있으나, 이들에만 한정 되는 것은 아니다. The hole injection layer is a layer that injects holes from an electrode, and has the ability to transport holes as a hole injection material, so that it has a hole injection effect at the anode, an excellent hole injection effect for a light emitting layer or a light emitting material. A compound that prevents the movement of excitons to the electron injection layer or the electron injection material and has excellent ability to form a thin film is preferable. It is preferable that the HOMO (highest occupied molecular orbital) of the hole injection material is between the work function of the positive electrode material and the HOMO of the surrounding organic material layer. Specific examples of hole injection materials include metal porphyrin, oligothiophene, arylamine-based organic substances, hexanitrile hexaazatriphenylene-based organic substances, quinacridone-based organic substances, and perylene-based organic substances. Organic substances, anthraquinone, polyaniline, and polythiophene-based conductive polymers, etc., but are not limited thereto.
상기 정공수송층은 정공주입층으로부터 정공을 수취하여 발광층까지 정공을 수송하는 층으로, 정공 수송 물질로는 양극이나 정공 주입층으로부터 정공을 수송받아 발광층으로 옮겨줄 수 있는 물질로 정공에 대한 이동성이 큰 물질이 적합하다. 상기 정공 수송 물질로 상기 화학식 1로 표시되는 화합물을 사용하거나, 또는 아릴아민 계열의 유기물, 전도성 고분자, 및 공액 부분과 비공액 부분이 함께 있는 블록 공중합체 등을 사용할 수 있으나, 이에 한정되는 것은 아니다.The hole transport layer is a layer that receives holes from the hole injection layer and transports holes to the emission layer, and the hole transport material is a material capable of transporting holes from the anode or the hole injection layer to the emission layer, and has high mobility for holes. The material is suitable. As the hole transport material, the compound represented by
상기 전자억제층(또는 전자저지층, 전자차단층)은 상기 정공수송층 상에 형성되어, 바람직하게는 발광층에 접하여 구비되어, 정공이동도를 조절하고, 전자의 과다한 이동을 방지하여 정공-전자간 결합 확률을 높여줌으로써 유기 발광 소자의 효율을 개선하는 역할을 하는 층을 의미한다. 상기 전자억제층은 전자저지물질을 포함하고, 이러한 전자저지물질의 예로 아릴아민 계열의 유기물 등을 사용할 수 있으나, 이에 한정되는 것은 아니다.The electron inhibiting layer (or electron blocking layer, electron blocking layer) is formed on the hole transport layer, and is preferably provided in contact with the light emitting layer to control hole mobility and prevent excessive movement of electrons, thereby preventing the hole-electron It refers to a layer that serves to improve the efficiency of an organic light-emitting device by increasing the probability of coupling. The electron inhibiting layer includes an electron blocking material, and an arylamine-based organic material may be used as an example of the electron blocking material, but is not limited thereto.
상기 발광층의 발광 물질로는 정공 수송층과 전자 수송층으로부터 정공과 전자를 각각 수송받아 결합시킴으로써 가시광선 영역의 빛을 낼 수 있는 물질로서, 형광이나 인광에 대한 양자 효율이 좋은 물질이 바람직하다. 구체적인 예로 8-히드록시-퀴놀린 알루미늄 착물(Alq3); 카르바졸 계열 화합물; 이량체화 스티릴(dimerized styryl) 화합물; BAlq; 10-히드록시벤조 퀴놀린-금속 화합물; 벤족사졸, 벤즈티아졸 및 벤즈이미다졸 계열의 화합물; 폴리(p-페닐렌비닐렌)(PPV) 계열의 고분자; 스피로(spiro) 화합물; 폴리플루오렌, 루브렌 등이 있으나, 이에 한정되는 것은 아니다. The light-emitting material of the light-emitting layer is a material capable of emitting light in the visible light region by transporting and combining holes and electrons from the hole transport layer and the electron transport layer, and a material having good quantum efficiency against fluorescence or phosphorescence is preferable. Specific examples of 8-hydroxy-quinoline aluminum complex (Alq 3 ); Carbazole-based compounds; Dimerized styryl compounds; BAlq; 10-hydroxybenzo quinoline-metal compound; Benzoxazole, benzthiazole, and benzimidazole-based compounds; Poly(p-phenylenevinylene) (PPV)-based polymer; Spiro compounds; Polyfluorene, rubrene, and the like, but are not limited thereto.
상기 발광층은 호스트 재료 및 도펀트 재료를 포함하며, 본원의 화학식 1로 표시되는 화합물을 호스트 재료로 사용한다.The light emitting layer includes a host material and a dopant material, and a compound represented by
이외에 호스트 재료로 축합 방향족환 유도체 또는 헤테로환 함유 화합물 등을 더 포함할 수 있다. 구체적으로 축합 방향족환 유도체로는 안트라센 유도체, 피렌 유도체, 나프탈렌 유도체, 펜타센 유도체, 페난트렌 화합물, 플루오란텐 화합물 등이 있고, 헤테로환 함유 화합물로는 카바졸 유도체, 디벤조퓨란 유도체, 래더형 퓨란 화합물, 피리미딘 유도체 등이 있으나, 이에 한정되는 것은 아니다. In addition, as a host material, a condensed aromatic ring derivative or a heterocyclic compound may be further included. Specifically, condensed aromatic ring derivatives include anthracene derivatives, pyrene derivatives, naphthalene derivatives, pentacene derivatives, phenanthrene compounds, and fluoranthene compounds, and heterocycle-containing compounds include carbazole derivatives, dibenzofuran derivatives, ladder type Furan compounds, pyrimidine derivatives, and the like, but are not limited thereto.
도펀트 재료로는 방향족 아민 유도체, 스트릴아민 화합물, 붕소 착체, 플루오란텐 화합물, 금속 착체 등이 있다. 구체적으로 방향족 아민 유도체로는 치환 또는 비치환된 아릴아미노기를 갖는 축합 방향족환 유도체로서, 아릴아미노기를 갖는 피렌, 안트라센, 크리센, 페리플란텐 등이 있으며, 스티릴아민 화합물로는 치환 또는 비치환된 아릴아민에 적어도 1개의 아릴비닐기가 치환되어 있는 화합물로, 아릴기, 실릴기, 알킬기, 사이클로알킬기 및 아릴아미노기로 이루어진 군에서 1 또는 2 이상 선택되는 치환기가 치환 또는 비치환된다. 구체적으로 스티릴아민, 스티릴디아민, 스티릴트리아민, 스티릴테트라아민 등이 있으나, 이에 한정되는 것은 아니다. 또한, 금속 착체로는 이리듐 착체, 백금 착체 등이 있으나, 이에 한정되는 것은 아니다.Dopant materials include aromatic amine derivatives, strylamine compounds, boron complexes, fluoranthene compounds, and metal complexes. Specifically, the aromatic amine derivative is a condensed aromatic ring derivative having a substituted or unsubstituted arylamino group, and includes pyrene, anthracene, chrysene, and periflanthene having an arylamino group, and the styrylamine compound is substituted or unsubstituted As a compound in which at least one arylvinyl group is substituted on the arylamine, one or two or more substituents selected from the group consisting of an aryl group, silyl group, alkyl group, cycloalkyl group, and arylamino group are substituted or unsubstituted. Specifically, there are styrylamine, styryldiamine, styryltriamine, styryltetraamine, and the like, but are not limited thereto. In addition, the metal complex includes an iridium complex, a platinum complex, and the like, but is not limited thereto.
바람직하게는, 상기 발광층은 하기와 같은 이리듐 착체 화합물을 도펀트 재료로 포함할 수 있으나, 이에 한정되는 것은 아니다.Preferably, the light emitting layer may include the following iridium complex compound as a dopant material, but is not limited thereto.
. .
상기 정공억제층(또는 정공저지층, 정공차단층)은 발광층 상에 형성되어, 바람직하게는 발광층에 접하여 구비되어, 전자이동도를 조절하고 정공의 과다한 이동을 방지하여 정공-전자간 결합 확률을 높여줌으로써 유기 발광 소자의 효율을 개선하는 역할을 하는 층을 의미한다. 상기 정공억제층은 정공억제물질을 포함하고, 이러한 정공저지물질의 예로 트리아진을 포함한 아진류유도체; 트리아졸 유도체; 옥사디아졸 유도체; 페난트롤린 유도체; 포스핀옥사이드 유도체 등의 전자흡인기가 도입된 화합물을 사용할 수 있으나, 이에 한정되는 것은 아니다.The hole inhibiting layer (or hole blocking layer, hole blocking layer) is formed on the light emitting layer, and is preferably provided in contact with the light emitting layer, to control electron mobility and prevent excessive movement of holes, thereby increasing the probability of hole-electron bonding. It refers to a layer that serves to improve the efficiency of an organic light-emitting device by increasing it. The hole-suppressing layer includes a hole-suppressing material, and examples of such a hole-blocking material include a subazine derivative including triazine; Triazole derivatives; Oxadiazole derivatives; Phenanthroline derivatives; A compound into which an electron withdrawing group such as a phosphine oxide derivative has been introduced may be used, but is not limited thereto.
상기 전자 주입 및 수송층은 전극으로부터 전자를 주입하고, 수취된 전자를 발광층까지 수송하는 전자수송층 및 전자주입층의 역할을 동시에 수행하는 층으로, 상기 발광층 또는 상기 정공억제층 상에 형성된다. 이러한 전자 주입 및 수송물질로는 음극으로부터 전자를 잘 주입 받아 발광층으로 옮겨줄 수 있는 물질로서, 전자에 대한 이동성이 큰 물질이 적합하다. 구체적인 전자 주입 및 수송물질의 예로는 8-히드록시퀴놀린의 Al 착물; Alq3를 포함한 착물; 유기 라디칼 화합물; 히드록시플라본-금속 착물; 트리아진 유도체 등이 있으나, 이들에만 한정되는 것은 아니다. 또는 플루오레논, 안트라퀴노다이메탄, 다이페노퀴논, 티오피란 다이옥사이드, 옥사졸, 옥사다이아졸, 트리아졸, 이미다졸, 페릴렌테트라카복실산, 플루오레닐리덴 메탄, 안트론 등과 그들의 유도체, 금속 착체 화합물, 또는 질소 함유 5원환 유도체 등과 함께 사용할 수도 있으나, 이에 한정되는 것은 아니다. The electron injection and transport layer is a layer that simultaneously serves as an electron transport layer and an electron injection layer for injecting electrons from an electrode and transporting received electrons to the emission layer, and is formed on the emission layer or the hole suppression layer. As such an electron injection and transport material, a material capable of receiving electrons from the cathode and transferring them to the emission layer is suitable, and a material having high mobility for electrons is suitable. Examples of specific electron injection and transport materials include Al complex of 8-hydroxyquinoline; Complexes containing Alq 3 ; Organic radical compounds; Hydroxyflavone-metal complex; Triazine derivatives and the like, but are not limited thereto. Or fluorenone, anthraquinodimethane, diphenoquinone, thiopyran dioxide, oxazole, oxadiazole, triazole, imidazole, perylenetetracarboxylic acid, fluorenylidene methane, anthrone, and their derivatives, metal complex compounds , Or nitrogen-containing 5-membered cyclic derivatives, but are not limited thereto.
상기 전자 주입 및 수송층은 전자주입층 및 전자수송층과 같은 별개의 층으로도 형성될 수 있다. 이와 같은 경우, 전자 수송층은 상기 발광층 또는 상기 정공억제층 상에 형성되고, 상기 전자 수송층에 포함되는 전자 수송 물질로는 상술한 전자 주입 및 수송 물질이 사용될 수 있다. 또한, 전자 주입층은 상기 전자 수송층 상에 형성되고, 상기 전자 주입층에 포함되는 전자 주입 물질로는 LiF, NaCl, CsF, Li2O, BaO, 플루오레논, 안트라퀴노다이메탄, 다이페노퀴논, 티오피란 다이옥사이드, 옥사졸, 옥사다이아졸, 트리아졸, 이미다졸, 페릴렌테트라카복실산, 플루오레닐리덴 메탄, 안트론 등과 그들의 유도체, 금속 착체 화합물 및 질소 함유 5원환 유도체 등이 사용될 수 있다.The electron injection and transport layer may be formed as separate layers such as an electron injection layer and an electron transport layer. In this case, the electron transport layer is formed on the emission layer or the hole suppression layer, and the electron injection and transport material described above may be used as the electron transport material included in the electron transport layer. In addition, the electron injection layer is formed on the electron transport layer, and electron injection materials included in the electron injection layer include LiF, NaCl, CsF, Li 2 O, BaO, fluorenone, anthraquinodimethane, diphenoquinone, Thiopyran dioxide, oxazole, oxadiazole, triazole, imidazole, perylenetetracarboxylic acid, fluorenylidene methane, anthrone, and the like, their derivatives, metal complex compounds, and nitrogen-containing 5-membered ring derivatives may be used.
상기 금속 착체 화합물로서는 8-하이드록시퀴놀리나토 리튬, 비스(8-하이드록시퀴놀리나토)아연, 비스(8-하이드록시퀴놀리나토)구리, 비스(8-하이드록시퀴놀리나토)망간, 트리스(8-하이드록시퀴놀리나토)알루미늄, 트리스(2-메틸-8-하이드록시퀴놀리나토)알루미늄, 트리스(8-하이드록시퀴놀리나토)갈륨, 비스(10-하이드록시벤조[h]퀴놀리나토)베릴륨, 비스(10-하이드록시벤조[h]퀴놀리나토)아연, 비스(2-메틸-8-퀴놀리나토)클로로갈륨, 비스(2-메틸-8-퀴놀리나토)(o-크레졸라토)갈륨, 비스(2-메틸-8-퀴놀리나토)(1-나프톨라토)알루미늄, 비스(2-메틸-8-퀴놀리나토)(2-나프톨라토)갈륨 등이 있으나, 이에 한정되는 것은 아니다.Examples of the metal complex compound include lithium 8-hydroxyquinolinato, bis(8-hydroxyquinolinato)zinc, bis(8-hydroxyquinolinato)copper, bis(8-hydroxyquinolinato)manganese, Tris(8-hydroxyquinolinato)aluminum, tris(2-methyl-8-hydroxyquinolinato)aluminum, tris(8-hydroxyquinolinato)gallium, bis(10-hydroxybenzo[h] Quinolinato)beryllium, bis(10-hydroxybenzo[h]quinolinato)zinc, bis(2-methyl-8-quinolinato)chlorogallium, bis(2-methyl-8-quinolinato)( o-cresolato)gallium, bis(2-methyl-8-quinolinato)(1-naphtholato)aluminum, bis(2-methyl-8-quinolinato)(2-naphtholato)gallium, etc. It is not limited thereto.
본 발명에 따른 유기 발광 소자는 사용되는 재료에 따라 전면 발광형, 후면 발광형 또는 양면 발광형일 수 있다.The organic light emitting device according to the present invention may be a top emission type, a bottom emission type, or a double-sided emission type depending on the material used.
또한, 상기 화학식 1로 표시되는 화합물은 유기 발광 소자 외에도 유기 태양 전지 또는 유기 트랜지스터에 포함될 수 있다.In addition, the compound represented by
상기 화학식 1로 표시되는 화합물 및 이를 포함하는 유기 발광 소자의 제조를 이하 실시예에서 구체적으로 설명한다. 그러나 하기 실시예는 본 발명을 예시하기 위한 것이며, 본 발명의 범위가 이들에 의하여 한정되는 것은 아니다.Preparation of the compound represented by
[제조예][Production Example]
제조예 1. 화합물 a(5H-benzo[b]carbazole)의 제조Preparation Example 1. Preparation of compound a (5H-benzo[b]carbazole)
1) 화합물 a-1의 제조1) Preparation of compound a-1
naphthalen-2-amine 300.0 g (1.0 eq), 1-bromo-2-iodobenzene 592.7 g (1.0 eq), NaOtBu 302.0 g (1.5 eq), Pd(OAc)2 4.70 g (0.01 eq), Xantphos 12.12 g (0.01 eq),1,4-dioxane 5L 에 녹여 환류하여 교반했다. 3 시간 후 반응이 종료되면 감압하여 용매를 제거했다. 이 후 Ethylacetate에 완전히 녹여서 물로 씻어주고 다시 감압하여 용매를 70% 정도 제거했다. 다시 환류 상태에서 Hexane을 넣어주며 결정을 떨어트려 식힌 후 여과했다. 이를 컬럼크로마토그래피하여 화합물 a-1 443.5 g 를 얻었다. naphthalen-2-amine 300.0 g (1.0 eq), 1-bromo-2-iodobenzene 592.7 g (1.0 eq), NaOtBu 302.0 g (1.5 eq), Pd(OAc) 2 4.70 g (0.01 eq), Xantphos 12.12 g ( 0.01 eq), 1,4-dioxane was dissolved in 5 L, refluxed and stirred. When the reaction was completed after 3 hours, the pressure was reduced to remove the solvent. After that, it was completely dissolved in ethylacetate, washed with water, and reduced pressure to remove about 70% of the solvent. Hexane was added under reflux again, the crystals were dropped, cooled, and filtered. This was subjected to column chromatography to obtain 443.5 g of compound a-1.
수율 71 %, Ms: [M+H]+ =299Yield 71%, Ms: [M+H] + =299
2) 화합물 a(5H-benzo[b]carbazole)의 제조2) Preparation of compound a(5H-benzo[b]carbazole)
화합물a-1 443.5 g (1.0 eq) 에 Pd(t-Bu3P)2 8.56 g (0.01 eq), K2CO3 463.2 g (2.00 eq) 을 다이에틸아세트아마이드 (Dimethylacetamide) 4L에 넣고 환류하여 교반했다. 3시간 후 반응물을 물에 부어서 결정을 떨어트리고 여과했다. 여과한 고체를 1,2-dichlorobenzene에 완전히 녹인 후 물로 씻어주고 생성물이 녹아있는 용액을 감압 농축하여 결정을 떨어트려 식힌 후 여과했다. 이를 컬럼크로마토그래피로 정제하여 화합물 a174.8 g 을 얻었다. Compound a-1 443.5 g (1.0 eq) Pd(t-Bu 3 P) 2 8.56 g (0.01 eq), K 2 CO 3 463.2 g (2.00 eq) was added to 4 L of diethylacetamide and refluxed. Stirred. After 3 hours, the reaction was poured into water to drop crystals and filtered. The filtered solid was completely dissolved in 1,2-dichlorobenzene, washed with water, and the solution in which the product was dissolved was concentrated under reduced pressure to drop crystals, cooled, and filtered. This was purified by column chromatography to obtain compound a174.8 g.
수율 48%, MS: [M+H]+ =218Yield 48%, MS: [M+H] + =218
제조예 2. 화합물 b(7H-dibenzo[b,g]carbazole)의 제조Preparation Example 2. Preparation of compound b (7H-dibenzo[b,g]carbazole)
1-bromo-2-iodobenzene대신 1-bromo-2-iodonaphthalene 을 사용하여 화합물 a의 제조 방법과 같은 방법으로 화합물 b를 합성했다.Compound b was synthesized in the same manner as the preparation method of compound a using 1-bromo-2-iodonaphthalene instead of 1-bromo-2-iodobenzene.
MS: [M+H]+ =268MS: [M+H] + =268
제조예 3. 화합물 c(6H-dibenzo[b,h]carbazole)의 제조Preparation Example 3. Preparation of compound c(6H-dibenzo[b,h]carbazole)
1-bromo-2-iodobenzene대신 2,3-dibromonaphthalene 을 사용하여 화합물 a의 제조 방법과 같은 방법으로 화합물 c를 합성했다.Compound c was synthesized in the same manner as the preparation method of compound a using 2,3-dibromonaphthalene instead of 1-bromo-2-iodobenzene.
MS: [M+H]+ =268MS: [M+H] + =268
제조예 4. 화합물 d(13H-dibenzo[a,h]carbazole) 제조Preparation Example 4. Preparation of compound d (13H-dibenzo[a,h]carbazole)
1-bromo-2-iodobenzene대신 2-bromo-1-iodonaphthalene 을 사용하여 화합물 a의 제조 방법과 같은 방법으로 화합물 d를 합성했다.Compound d was synthesized in the same manner as the preparation method of compound a using 2-bromo-1-iodonaphthalene instead of 1-bromo-2-iodobenzene.
MS: [M+H]+ =268MS: [M+H] + =268
제조예 5. 중간체 화합물 화합물의 합성Preparation Example 5. Synthesis of Intermediate Compound Compound
1) 중간체 화합물 1-4의 합성1) Synthesis of intermediate compound 1-4
(4-chloro-2-hydroxy-5-iodophenyl)boronic acid (100g, 335.3mmol)와 phenylboronic acid (40.9g, 335.3mmol)를 THF 2000ml에 넣고 교반 하고 potassium carbonate (185.3g, 1341.1mmol)를 물에 녹여 투입하고 충분히 교반한 후 환류 했을 때테트라키스트리페닐-포스피노팔라듐 (1.7g, 3.4mmol)을 투입하였다. 3시간 반응 후 상온으로 식히고 유기층과 물층을 분리 후 유기층을 증류하였다. 이를 다시 클로로포름에 녹이고, 물로 2회 세척 후에 유기층을 분리하여, 무수황산마그네슘을 넣고 교반한 후 여과하여 여액을 감압 증류하였다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제하여 중간체 화합물 1-4를 53.3g 제조하였다. (4-chloro-2-hydroxy-5-iodophenyl)boronic acid (100g, 335.3mmol) and phenylboronic acid (40.9g, 335.3mmol) were added to 2000ml of THF, stirred, and potassium carbonate (185.3g, 1341.1mmol) was added to water. After dissolving, stirring, and refluxing, tetrakistriphenyl-phosphinopalladium (1.7g, 3.4mmol) was added. After the reaction for 3 hours, the mixture was cooled to room temperature, the organic layer and the water layer were separated, and the organic layer was distilled. This was again dissolved in chloroform, washed twice with water, and then the organic layer was separated, anhydrous magnesium sulfate was added thereto, stirred, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to prepare 53.3 g of intermediate compound 1-4.
수율 64%, MS: [M+H]+= 249Yield 64%, MS: [M+H] + = 249
2) 중간체 화합물 1-3의 합성2) Synthesis of Intermediate Compound 1-3
중간체 화합물1-4 (53.3g, 214.5mmol)와 1-bromo-3-fluoro-2-iodobenzene (64.5g, 214.5mmol)를 THF 1066ml에 넣고 교반 하고 potassium carbonate (118.6g, 858.1mmol)를 물에 녹여 투입하고 충분히 교반한 후 환류 했을 때테트라키스트리페닐-포스피노팔라듐 (1.1g, 2.1mmol)을 투입하였다. 2시간 반응 후 상온으로 식히고 유기층과 물층을 분리 후 유기층을 증류하였다. 이를 다시 클로로포름에 녹이고, 물로 2회 세척 후에 유기층을 분리하여, 무수황산마그네슘을 넣고 교반한 후 여과하여 여액을 감압 증류하였다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제하여 중간체 화합물 1-3를 54.3g 제조하였다. Intermediate compound 1-4 (53.3g, 214.5mmol) and 1-bromo-3-fluoro-2-iodobenzene (64.5g, 214.5mmol) were added to 1066ml of THF, stirred, and potassium carbonate (118.6g, 858.1mmol) was added to water. After dissolving, stirring, and refluxing, tetrakistriphenyl-phosphinopalladium (1.1g, 2.1mmol) was added. After 2 hours of reaction, the mixture was cooled to room temperature, the organic layer and the water layer were separated, and the organic layer was distilled. This was again dissolved in chloroform, washed twice with water, and then the organic layer was separated, anhydrous magnesium sulfate was added thereto, stirred, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to prepare 54.3 g of intermediate compounds 1-3.
수율 67%, MS: [M+H]+= 379Yield 67%, MS: [M+H] + = 379
3) 중간체 화합물 1-2의 합성 3) Synthesis of intermediate compound 1-2
중간체 화합물 1-3 54.3 g (1.0 eq) 에 K2CO3 39.74g (2.00 eq) 을 다이에틸아세트아마이드 (Dimethylacetamide) 1L에 넣고 환류하여 교반했다. 1시간 후 반응물을 물에 부어서 결정을 떨어트리고 여과했다. 여과한 고체를 Ethylacetate에 완전히 녹여서 물로 씻어주고 다시 감압하여 용매를 70% 정도 제거했다. 다시 환류 상태에서 Hexane을 넣어주며 결정을 떨어트려 식힌 후 여과했다. 이를 컬럼크로마토그래피하여 중간체 화합물 1-2 39.08 g 를 얻었다. To 54.3 g (1.0 eq) of the intermediate compound 1-3, 39.74 g (2.00 eq) of K 2 CO 3 was added to 1 L of diethylacetamide, followed by refluxing and stirring. After 1 hour, the reaction was poured into water to drop crystals and filtered. The filtered solid was completely dissolved in ethylacetate, washed with water, and reduced pressure to remove about 70% of the solvent. Hexane was added under reflux again, the crystals were dropped, cooled, and filtered. This was subjected to column chromatography to obtain 39.08 g of an intermediate compound 1-2.
수율 76 %, [M+H]+= 359Yield 76%, [M+H] + = 359
4) 중간체 화합물 1-1의 합성 4) Synthesis of intermediate compound 1-1
중간체 화합물1-2 (54.3g, 151.8mmol)와 bis(pinacolato)diboron (42.4g, 167mmol)를 1,4-dioxane 1086ml에 환류시키며 교반하였다. 이 후 potassium acetate (22.4g, 227.7mmol)를 투입하고 충분히 교반한 후 bis(dibenzylideneacetone)palladium(0) (2.6g, 4.6mmol) 및 tricyclohexylphosphine (2.6g, 9.1mmol)을 투입하였다. 8시간 반응하고 상온으로 식히고 클로로포름과 물을 이용하여 유기층을 분리 후 유기층을 증류하였다. 이를 다시 클로로포름에 녹이고, 물로 2회 세척 후에 유기층을 분리하여, 무수황산마그네슘을 넣고 교반한 후 여과하여 여액을 감압 증류하였다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제하여 중간체 화합물 1-1를 42.4g 제조하였다. Intermediate compound 1-2 (54.3g, 151.8mmol) and bis(pinacolato)diboron (42.4g, 167mmol) were stirred under reflux in 1086ml of 1,4-dioxane. After that, potassium acetate (22.4g, 227.7mmol) was added, stirred sufficiently, and then bis(dibenzylideneacetone)palladium(0) (2.6g, 4.6mmol) and tricyclohexylphosphine (2.6g, 9.1mmol) were added. After reacting for 8 hours, cooling to room temperature, the organic layer was separated using chloroform and water, and the organic layer was distilled. This was again dissolved in chloroform, washed twice with water, and then the organic layer was separated, anhydrous magnesium sulfate was added thereto, stirred, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to prepare 42.4 g of intermediate compound 1-1.
수율 69%, MS: [M+H]+= 406Yield 69%, MS: [M+H] + = 406
5) 중간체 화합물 1의 제조.5) Preparation of
질소 분위기에서 중간체 화합물 1-1 (105.2mmol)와 2-chloro-4,6-diphenyl-1,3,5-triazine (105.2mmol)를 THF 624ml에 넣고 교반 하고 potassium carbonate (420.9mmol)를 물에 녹여 투입하고 충분히 교반한 후 환류 했을 때 bis(tri-tert-butylphosphine)palladium(0) (0.5g, 1.1mmol)을 투입하였다. 3시간 반응 후 상온으로 식히고 유기층과 물층을 분리 후 유기층을 증류하였다. 이를 다시 클로로포름에 녹이고, 물로 2회 세척 후에 유기층을 분리하여, 무수황산마그네슘을 넣고 교반한 후 여과하여 여액을 감압 증류하였다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제하여 중간체 화합물 1을 제조하였다. In a nitrogen atmosphere, intermediate compound 1-1 (105.2mmol) and 2-chloro-4,6-diphenyl-1,3,5-triazine (105.2mmol) were added to 624ml of THF, stirred, and potassium carbonate (420.9mmol) was added to water. After dissolving and stirring, bis(tri-tert-butylphosphine)palladium(0) (0.5g, 1.1mmol) was added when refluxed. After the reaction for 3 hours, the mixture was cooled to room temperature, the organic layer and the water layer were separated, and the organic layer was distilled. This was again dissolved in chloroform, washed twice with water, and then the organic layer was separated, anhydrous magnesium sulfate was added thereto, stirred, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to prepare an
MS: [M+H]+= 691MS: [M+H] + = 691
6) 중간체 화합물 2 내지 20의 제조6) Preparation of
2-chloro-4,6-diphenyl-1,3,5-triazine 대신 말단 치환기가 상이한 출발물질을 사용하여 중간체 화합물 2의 합성과 동일한 방법으로 하기 중간체 화합물 2 내지 19를 제조하였다.Using a starting material having a different terminal substituent instead of 2-chloro-4,6-diphenyl-1,3,5-triazine, the following
[실시예 및 비교예][Examples and Comparative Examples]
실시예 1: 화합물 1의 합성Example 1: Synthesis of
질소 분위기에서 중간체 화합물1 (20 g, 39.2mmol), 화합물 a (8.5g, 39.2 mmol), sodium tert-butoxide (7.5 g, 78.4 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.4 g, 0.8 mmol)을 투입했다. 2시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 1 10g 을 얻었다. In a nitrogen atmosphere, intermediate compound 1 (20 g, 39.2 mmol), compound a (8.5 g, 39.2 mmol), sodium tert-butoxide (7.5 g, 78.4 mmol) was added to Xylene 400 ml, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.4 g, 0.8 mmol) was added. After 2 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 10 g of
수율 37%, MS: [M+H]+= 692Yield 37%, MS: [M+H] + = 692
실시예 2: 화합물 2의 합성Example 2: Synthesis of
질소 분위기에서 중간체 화합물2 (20 g, 34.1mmol), 화합물 a (7.4g, 34.1 mmol), sodium tert-butoxide (6.6 g, 68.2 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.7 mmol)을 투입했다. 3시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 2 8.1g 을 얻었다. In a nitrogen atmosphere, intermediate compound 2 (20 g, 34.1 mmol), compound a (7.4 g, 34.1 mmol), sodium tert-butoxide (6.6 g, 68.2 mmol) was added to Xylene 400 ml, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.7 mmol) was added. After 3 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 8.1 g of
수율 31%, MS: [M+H]+= 768Yield 31%, MS: [M+H] + = 768
실시예 3: 화합물 3의 합성Example 3: Synthesis of
질소 분위기에서 중간체 화합물 3 (20 g, 31.4mmol), 화합물 a (6.8g, 31.4 mmol), sodium tert-butoxide (6 g, 62.9 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.6 mmol)을 투입했다. 3시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 3 13.1g 을 얻었다. In a nitrogen atmosphere, intermediate compound 3 (20 g, 31.4 mmol), compound a (6.8 g, 31.4 mmol), sodium tert-butoxide (6 g, 62.9 mmol) was added to Xylene 400 ml, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.6 mmol) was added. After 3 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 13.1 g of
수율 51%, MS: [M+H]+= 818Yield 51%, MS: [M+H] + = 818
실시예 4: 화합물 4의 합성Example 4: Synthesis of
질소 분위기에서 중간체 화합물 4 (20 g, 33.3mmol), 화합물 a (7.2g, 33.3 mmol), sodium tert-butoxide (6.4 g, 66.7 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.7 mmol)을 투입했다. 4시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 4 8.6g 을 얻었다. In a nitrogen atmosphere, intermediate compound 4 (20 g, 33.3 mmol), compound a (7.2 g, 33.3 mmol), sodium tert-butoxide (6.4 g, 66.7 mmol) was added to Xylene 400 ml, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.7 mmol) was added. After 4 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 8.6 g of
수율 33%, MS: [M+H]+= 782Yield 33%, MS: [M+H] + = 782
실시예 5: 화합물 5의 합성Example 5: Synthesis of
질소 분위기에서 중간체 화합물 5 (20 g, 33.4mmol), 화합물 a (7.3g, 33.4 mmol), sodium tert-butoxide (6.4 g, 66.8 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.7 mmol)을 투입했다. 4시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 5 12.2g 을 얻었다. In a nitrogen atmosphere, intermediate compound 5 (20 g, 33.4 mmol), compound a (7.3 g, 33.4 mmol), sodium tert-butoxide (6.4 g, 66.8 mmol) was added to Xylene 400 ml, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.7 mmol) was added. After 4 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 12.2 g of
수율 47%, MS: [M+H]+= 781Yield 47%, MS: [M+H] + = 781
실시예 6: 화합물 6의 합성Example 6: Synthesis of
질소 분위기에서 중간체 화합물 6 (20 g, 26.2mmol), 화합물 a (5.7g, 26.2 mmol), sodium tert-butoxide (5 g, 52.4 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol)을 투입했다. 4시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 6 8.6g 을 얻었다. In a nitrogen atmosphere, intermediate compound 6 (20 g, 26.2 mmol), compound a (5.7 g, 26.2 mmol), and sodium tert-butoxide (5 g, 52.4 mmol) were added to Xylene 400 ml, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol) was added. After 4 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 8.6 g of
수율 35%, MS: [M+H]+= 944Yield 35%, MS: [M+H] + = 944
실시예 7: 화합물 7의 합성Example 7: Synthesis of
질소 분위기에서 중간체 화합물 7 (20 g, 27.1mmol), 화합물 a (5.9g, 27.1 mmol), sodium tert-butoxide (5.2 g, 54.2 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol)을 투입했다. 2시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 7 11.5g 을 얻었다. In a nitrogen atmosphere, intermediate compound 7 (20 g, 27.1 mmol), compound a (5.9 g, 27.1 mmol), sodium tert-butoxide (5.2 g, 54.2 mmol) was added to Xylene 400 ml, and stirred and refluxed. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol) was added. After 2 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 11.5 g of
수율 46%, MS: [M+H]+= 920Yield 46%, MS: [M+H] + = 920
실시예 8: 화합물 8의 합성Example 8: Synthesis of Compound 8
질소 분위기에서 중간체 화합물 8 (20 g, 25.4mmol), 화합물 a (5.5g, 25.4 mmol), sodium tert-butoxide (4.9 g, 50.7 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol)을 투입했다. 3시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 8 9.1g 을 얻었다. In a nitrogen atmosphere, intermediate compound 8 (20 g, 25.4 mmol), compound a (5.5 g, 25.4 mmol), sodium tert-butoxide (4.9 g, 50.7 mmol) was added to Xylene 400 ml, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol) was added. After 3 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 9.1 g of compound 8.
수율 37%, MS: [M+H]+= 970Yield 37%, MS: [M+H] + = 970
실시예 9: 화합물 9의 합성Example 9: Synthesis of compound 9
질소 분위기에서 중간체 화합물 9 (20 g, 25mmol), 화합물 a (5.4g, 25 mmol), sodium tert-butoxide (4.8 g, 49.9 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol)을 투입했다. 3시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 9 11.5g 을 얻었다. In a nitrogen atmosphere, intermediate compound 9 (20 g, 25 mmol), compound a (5.4 g, 25 mmol), sodium tert-butoxide (4.8 g, 49.9 mmol) was added to 400 ml of Xylene, and stirred and refluxed. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol) was added. After 3 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 11.5 g of compound 9.
수율 47%, MS: [M+H]+= 983Yield 47%, MS: [M+H] + = 983
실시예 10: 화합물 10의 합성Example 10: Synthesis of Compound 10
질소 분위기에서 중간체 화합물 10 (20 g, 26.9mmol), 화합물 a (5.9g, 26.9 mmol), sodium tert-butoxide (5.2 g, 53.9 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol)을 투입했다. 3시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 10 12.2g 을 얻었다. In a nitrogen atmosphere, intermediate compound 10 (20 g, 26.9 mmol), compound a (5.9 g, 26.9 mmol), sodium tert-butoxide (5.2 g, 53.9 mmol) was added to Xylene 400 ml, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol) was added. After 3 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 12.2 g of compound 10.
수율 49%, MS: [M+H]+= 924Yield 49%, MS: [M+H] + = 924
실시예 11: 화합물 11의 합성Example 11: Synthesis of Compound 11
질소 분위기에서 중간체 화합물 11 (20 g, 35.7mmol), 화합물 c (9.5g, 35.7 mmol), sodium tert-butoxide (6.9 g, 71.4 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.4 g, 0.7 mmol)을 투입했다. 4시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 11 12.4g 을 얻었다. In a nitrogen atmosphere, intermediate compound 11 (20 g, 35.7 mmol), compound c (9.5 g, 35.7 mmol), and sodium tert-butoxide (6.9 g, 71.4 mmol) were added to Xylene 400 ml, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.4 g, 0.7 mmol) was added. After 4 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 12.4 g of compound 11.
수율 44%, MS: [M+H]+= 792Yield 44%, MS: [M+H] + = 792
실시예 12: 화합물 12의 합성Example 12: Synthesis of Compound 12
질소 분위기에서 중간체 화합물 12 (20 g, 30.2mmol), 화합물 b (8.1g, 30.2 mmol), sodium tert-butoxide (5.8 g, 60.4 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.6 mmol)을 투입했다. 2시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 12 8.1g 을 얻었다. In a nitrogen atmosphere, intermediate compound 12 (20 g, 30.2 mmol), compound b (8.1 g, 30.2 mmol), and sodium tert-butoxide (5.8 g, 60.4 mmol) were added to Xylene 400 ml, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.6 mmol) was added. After 2 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 8.1 g of compound 12.
수율 30%, MS: [M+H]+= 894Yield 30%, MS: [M+H] + = 894
실시예 13: 화합물 13의 합성Example 13: Synthesis of Compound 13
질소 분위기에서 중간체 화합물 13 (20 g, 30.3mmol), 화합물 c (8.1g, 30.3 mmol), sodium tert-butoxide (5.8 g, 60.6 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.6 mmol)을 투입했다. 3시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 13 13.5g 을 얻었다. In a nitrogen atmosphere, intermediate compound 13 (20 g, 30.3 mmol), compound c (8.1 g, 30.3 mmol), and sodium tert-butoxide (5.8 g, 60.6 mmol) were added to Xylene 400 ml, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.6 mmol) was added. After 3 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 13.5 g of compound 13.
수율 50%, MS: [M+H]+= 892Yield 50%, MS: [M+H] + = 892
실시예 14: 화합물 14의 합성Example 14: Synthesis of Compound 14
질소 분위기에서 중간체 화합물 14 (20 g, 29.6mmol), 화합물 d (7.9g, 29.6 mmol), sodium tert-butoxide (5.7 g, 59.2 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.6 mmol)을 투입했다. 3시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 14 8.9g 을 얻었다. In a nitrogen atmosphere, intermediate compound 14 (20 g, 29.6 mmol), compound d (7.9 g, 29.6 mmol), sodium tert-butoxide (5.7 g, 59.2 mmol) was added to Xylene 400 ml, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.6 mmol) was added. After 3 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 8.9 g of compound 14.
수율 33%, MS: [M+H]+= 908Yield 33%, MS: [M+H] + = 908
실시예 15: 화합물 15의 합성Example 15: Synthesis of Compound 15
질소 분위기에서 중간체 화합물 15 (20 g, 30mmol), 화합물 b (8g, 30 mmol), sodium tert-butoxide (5.8 g, 60 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.6 mmol)을 투입했다. 2시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 15 9.7g 을 얻었다. In a nitrogen atmosphere, intermediate compound 15 (20 g, 30 mmol), compound b (8 g, 30 mmol), and sodium tert-butoxide (5.8 g, 60 mmol) were added to 400 ml of Xylene, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.6 mmol) was added. After 2 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 9.7 g of compound 15.
수율 36%, MS: [M+H]+= 898Yield 36%, MS: [M+H] + = 898
실시예 16: 화합물 16의 합성Example 16: Synthesis of Compound 16
질소 분위기에서 중간체 화합물 16 (20 g, 26.2mmol), 화합물 d (7g, 26.2 mmol), sodium tert-butoxide (5 g, 52.5 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol)을 투입했다. 3시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 16 8.6g 을 얻었다. In a nitrogen atmosphere, intermediate compound 16 (20 g, 26.2 mmol), compound d (7 g, 26.2 mmol), sodium tert-butoxide (5 g, 52.5 mmol) was added to Xylene 400 ml, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol) was added. After 3 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 8.6 g of compound 16.
수율 33%, MS: [M+H]+= 994Yield 33%, MS: [M+H] + = 994
실시예 17: 화합물 17의 합성Example 17: Synthesis of Compound 17
질소 분위기에서 중간체 화합물 17 (20 g, 29.6mmol), 화합물 d (7.9g, 29.6 mmol), sodium tert-butoxide (5.7 g, 59.2 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.6 mmol)을 투입했다. 4시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 17 9.7g 을 얻었다. In a nitrogen atmosphere, intermediate compound 17 (20 g, 29.6 mmol), compound d (7.9 g, 29.6 mmol), and sodium tert-butoxide (5.7 g, 59.2 mmol) were added to Xylene 400 ml, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.6 mmol) was added. After 4 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 9.7 g of compound 17.
수율 36%, MS: [M+H]+= 908Yield 36%, MS: [M+H] + = 908
실시예 18: 화합물 18의 합성Example 18: Synthesis of Compound 18
질소 분위기에서 중간체 화합물 18 (20 g, 25.8mmol), 화합물 b (6.9g, 25.8 mmol), sodium tert-butoxide (5 g, 51.5 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol)을 투입했다. 4시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 18 10.4g 을 얻었다. In a nitrogen atmosphere, intermediate compound 18 (20 g, 25.8 mmol), compound b (6.9 g, 25.8 mmol), and sodium tert-butoxide (5 g, 51.5 mmol) were added to Xylene 400 ml, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol) was added. After 4 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 10.4 g of compound 18.
수율 40%, MS: [M+H]+= 1008Yield 40%, MS: [M+H] + = 1008
실시예 19: 화합물 19의 합성Example 19: Synthesis of Compound 19
질소 분위기에서 중간체 화합물 19 (20 g, 24.9mmol), 화합물 b (6.7g, 24.9 mmol), sodium tert-butoxide (4.8 g, 49.9 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol)을 투입했다. 3시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 19 12.1g 을 얻었다. In a nitrogen atmosphere, intermediate compound 19 (20 g, 24.9 mmol), compound b (6.7 g, 24.9 mmol), and sodium tert-butoxide (4.8 g, 49.9 mmol) were added to Xylene 400 ml, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol) was added. After 3 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 12.1 g of compound 19.
수율 47%, MS: [M+H]+= 1034Yield 47%, MS: [M+H] + = 1034
실시예 20: 화합물 20의 합성Example 20: Synthesis of Compound 20
질소 분위기에서 중간체 화합물 20 (20 g, 26mmol), 화합물 c (7g, 26 mmol), sodium tert-butoxide (5 g, 52.1 mmol) 을 Xylene400 ml에 넣고 교반 및 환류했다. 이 후 bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol)을 투입했다. 3시간 후 반응이 종결 되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름에 완전히 녹이고 물로 2회 세척 후에 유기층을 분리하여 무수황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 20 10.7g 을 얻었다. In a nitrogen atmosphere, intermediate compound 20 (20 g, 26 mmol), compound c (7 g, 26 mmol), and sodium tert-butoxide (5 g, 52.1 mmol) were added to Xylene 400 ml, followed by stirring and refluxing. After this, bis(tri-tert-butylphosphine)palladium(0) (0.3 g, 0.5 mmol) was added. After 3 hours, the reaction was terminated, cooled to room temperature, and reduced pressure to remove the solvent. Thereafter, the compound was completely dissolved in chloroform again, washed twice with water, and the organic layer was separated, treated with anhydrous magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain 10.7 g of compound 20.
수율 41%, MS: [M+H]+= 1000Yield 41%, MS: [M+H] + = 1000
[실험예][Experimental Example]
비교 실험예 1Comparative Experimental Example 1
ITO(indium tin oxide)가 1,000Å의 두께로 박막 코팅된 유리 기판을 세제를 녹인 증류수에 넣고 초음파로 세척했다. 이때, 세제로는 피셔사(Fischer Co.) 제품을 사용하였으며, 증류수로는 밀러포어사(Millipore Co.) 제품의 필터(Filter)로 2차로 걸러진 증류수를 사용했다. ITO를 30분간 세척한 후 증류수로 2회 반복하여 초음파 세척을 10분간 진행했다. 증류수 세척이 끝난 후, 이소프로필알콜, 아세톤, 메탄올의 용제로 초음파 세척을 하고 건조시킨 후 플라즈마 세정기로 수송시켰다. 또한, 산소 플라즈마를 이용하여 상기 기판을 5분간 세정한 후 진공 증착기로 기판을 수송시켰다.A glass substrate coated with a thin film of ITO (indium tin oxide) having a thickness of 1,000Å was placed in distilled water dissolved in a detergent and washed with ultrasonic waves. At this time, a product made by Fischer Co. was used as a detergent, and distilled water secondarily filtered with a filter manufactured by Millipore Co. was used as distilled water. After washing the ITO for 30 minutes, it was repeated twice with distilled water to perform ultrasonic cleaning for 10 minutes. After washing with distilled water, ultrasonic cleaning was performed with a solvent of isopropyl alcohol, acetone, and methanol, dried, and then transported to a plasma cleaner. In addition, after cleaning the substrate for 5 minutes using oxygen plasma, the substrate was transported to a vacuum evaporator.
이렇게 준비된 ITO 투명 전극 위에 정공주입층으로 하기 HI-1 화합물을 1150Å의 두께로 형성하되 하기 A-1 화합물을 1.5% 농도로 p-doping 했다. 상기 정공주입층 위에 하기 HT-1 화합물을 진공 증착하여 막 두께 800Å 의 정공수송층을 형성했다. 이어서, 상기 정공수송층 위에 막 두께 150Å으로 하기 EB-1 화합물을 진공 증착하여 전자저지층을 형성했다. 이어서, 상기 EB-1 증착막 위에 하기 RH-1 화합물과 하기 Dp-7 화합물을 98:2의 중량비로 진공 증착하여 400Å 두께의 적색 발광층을 형성했다. 상기 발광층 위에 막 두께 30Å으로 하기 HB-1 화합물을 진공 증착하여 정공저지층을 형성했다. 이어서, 상기 정공저지층 위에 하기 ET-1 화합물과 하기 LiQ 화합물을 2:1의 중량비로 진공 증착하여 300Å의 두께로 전자 주입 및 수송층을 형성했다. 상기 전자 주입 및 수송층 위에 순차적으로 12Å 두께로 리튬플로라이드(LiF)와 1,000Å 두께로 알루미늄을 증착하여 음극을 형성했다. The following HI-1 compound was formed as a hole injection layer on the prepared ITO transparent electrode to a thickness of 1150Å, but the following compound A-1 was p-doped at a concentration of 1.5%. The following HT-1 compound was vacuum deposited on the hole injection layer to form a hole transport layer having a thickness of 800 Å. Subsequently, an electron blocking layer was formed by vacuum vapor deposition of the following EB-1 compound having a thickness of 150 Å on the hole transport layer. Subsequently, the following RH-1 compound and the following Dp-7 compound were vacuum-deposited at a weight ratio of 98:2 on the EB-1 vapor deposition film to form a red light emitting layer having a thickness of 400 Å. A hole blocking layer was formed by vacuum vapor deposition of the following HB-1 compound having a thickness of 30 Å on the emission layer. Subsequently, the following ET-1 compound and the following LiQ compound were vacuum-deposited at a weight ratio of 2:1 on the hole blocking layer to form an electron injection and transport layer with a thickness of 300 Å. Lithium fluoride (LiF) at a thickness of 12 Å and aluminum at a thickness of 1,000 Å were sequentially deposited on the electron injection and transport layer to form a negative electrode.
상기의 과정에서 유기물의 증착속도는 0.4~0.7Å/sec를 유지하였고, 음극의 리튬플로라이드는 0.3Å/sec, 알루미늄은 2Å/sec의 증착 속도를 유지하였으며, 증착시 진공도는 2ⅹ10-7 ~ 5ⅹ10-6 torr를 유지하여, 유기 발광 소자를 제작했다.Was maintained at the deposition rate was 0.4 ~ 0.7Å / sec for organic material in the above process, the lithium fluoride of the cathode was 0.3Å / sec, the deposition rate of aluminum was maintained 2Å / sec, the degree of vacuum upon deposition 2ⅹ10 -7 ~ An organic light-emitting device was fabricated by maintaining 5x10 -6 torr.
실험예 1 내지 20 및 비교 실험예 2 내지 9Experimental Examples 1 to 20 and Comparative Experimental Examples 2 to 9
비교 실험예 1의 유기 발광 소자에서 RH-1 대신 하기 표 1에 기재된 화합물을 사용하는 것을 제외하고는, 상기 비교 실험예 1과 동일한 방법으로 유기 발광 소자를 제조했다. 비교 실험예 2 내지 9에서 사용된 화합물은 하기와 같다.An organic light-emitting device was manufactured in the same manner as in Comparative Experimental Example 1, except that the compound shown in Table 1 below was used instead of RH-1 in the organic light-emitting device of Comparative Experimental Example 1. The compounds used in Comparative Experimental Examples 2 to 9 are as follows.
상기 실험예 1 내지 20 및 비교 실험예 1 내지 9에서 제조한 유기 발광 소자에 전류를 인가하였을 때, 전압, 효율을 측정(10mA/cm2)하고 그 결과를 하기 표 1에 나타냈다. 수명 T95는 휘도가 초기 휘도(6000 nit)에서 95%로 감소되는데 소요되는 시간을 의미한다.When current was applied to the organic light emitting devices prepared in Experimental Examples 1 to 20 and Comparative Experimental Examples 1 to 9, voltage and efficiency were measured (10mA/cm 2 ), and the results are shown in Table 1 below. Life T95 refers to the time it takes for the luminance to decrease from the initial luminance (6000 nit) to 95%.
상기 비교 실험예 1의 적색 유기 발광 소자는 종래 널리 사용되고 있는 물질을 사용하였으며, 전자 저지층으로 화합물 [EB-1], 적색 발광층으로 RH-1/Dp-7을 사용하는 구조이다. The red organic light-emitting device of Comparative Experimental Example 1 used a material that has been widely used in the past, and has a structure using compound [EB-1] as an electron blocking layer and RH-1/Dp-7 as a red light-emitting layer.
본 발명의 화합물이 전자와 정공에 대한 안정도가 높아, 적색 발광층의 호스트로 사용되는 경우 비교예 물질에 비해서 구동 전압이 크게 낮아졌으며, 효율 측면에도 크게 상승하였다. 즉, 본원의 화합물을 적색 발광층의 호스트로 사용 시 적색 도판트로의 에너지 전달이 잘 이루어지며, 이에 따라, 높은 효율을 유지하면서도 수명 특성을 2배 이상 크게 개선 시킬 수 있는 것을 알 수 있었다. When the compound of the present invention has high stability against electrons and holes, and is used as a host of a red light-emitting layer, the driving voltage is significantly lower than that of the material of the comparative example, and the efficiency is greatly increased. That is, when the compound of the present application is used as a host of the red light emitting layer, energy transfer to the red dopant is well performed, and accordingly, it was found that while maintaining high efficiency, the lifespan characteristics can be improved more than twice.
결론적으로 본 발명의 화합물을 적색 발광층의 호스트로 사용하였을 때 유기 발광 소자의 구동전압, 발광 효율 및 수명 특성을 모두 개선할 수 있다는 것을 확인할 수 있다. In conclusion, it can be seen that when the compound of the present invention is used as a host of the red emission layer, all of the driving voltage, luminous efficiency, and lifetime characteristics of the organic light emitting device can be improved.
1: 기판
2: 양극
3: 정공수송층
4: 발광층
5: 전자주입 및 수송층
6: 음극
7: 정공주입층
8: 전자억제층
9: 정공억제층 1: substrate 2: anode
3: hole transport layer 4: light emitting layer
5: electron injection and transport layer 6: cathode
7: hole injection layer 8: electron suppression layer
9: hole suppression layer
Claims (6)
[화학식 1]
상기 화학식 1에서,
R1 내지 R4는 각각 독립적으로 수소 또는 중수소이거나, 이들 중 인접한 두 개가 서로 결합하여 치환 또는 비치환된 C6-30 방향족 고리를 형성하고,
R5 및 R6는 각각 독립적으로 수소, 또는 중수소이고,
m은 0 내지 5의 정수이고,
n은 0 내지 6의 정수이고,
X1 내지 X3는 각각 독립적으로, N 또는 CH이고, 단, 이들 중 둘 이상이 N이고,
Ar1 및 Ar2는 각각 독립적으로, 치환 또는 비치환된 C6-60 아릴 또는 N, O 및 S로 구성되는 군으로부터 선택되는 하나 이상의 헤테로 원자를 포함하는 치환 또는 비치환된 C5-60 헤테로아릴이고,
Ar3는 치환 또는 비치환된 C6-60 아릴임.
Compound represented by the following formula (1):
[Formula 1]
In Formula 1,
R 1 to R 4 are each independently hydrogen or deuterium, or two adjacent two of them combine with each other to form a substituted or unsubstituted C 6-30 aromatic ring,
R 5 and R 6 are each independently hydrogen or deuterium,
m is an integer from 0 to 5,
n is an integer from 0 to 6,
X 1 to X 3 are each independently N or CH, provided that at least two of them are N,
Ar 1 and Ar 2 are each independently a substituted or unsubstituted C 6-60 Aryl or substituted or unsubstituted C 5-60 containing at least one hetero atom selected from the group consisting of N, O and S Heteroaryl,
Ar 3 is substituted or unsubstituted C 6-60 It is aryl.
상기 화학식 1로 표시되는 화합물은, 하기 화학식 1-1 내지 1-4 중 어느 하나로 표시되는, 화합물:
[화학식 1-1]
[화학식 1-2]
[화학식 1-3]
[화학식 1-4]
상기 화학식 1-1 내지 1-4에서,
R7는 각각 독립적으로, 수소 또는 중수소이고,
o는 0 내지 4의 정수이고,
p는 0 내지 6의 정수이고,
X1, X2, X3, Ar1, Ar2, Ar3, R5, R6, m 및 n은 청구항 1에서 정의한 바와 같음.
The method of claim 1,
The compound represented by Formula 1 is a compound represented by any one of the following Formulas 1-1 to 1-4:
[Formula 1-1]
[Formula 1-2]
[Formula 1-3]
[Formula 1-4]
In Formulas 1-1 to 1-4,
Each R 7 is independently hydrogen or deuterium,
o is an integer from 0 to 4,
p is an integer from 0 to 6,
X 1 , X 2 , X 3 , Ar 1 , Ar 2 , Ar 3 , R 5 , R 6 , m and n are as defined in claim 1.
Ar1 및 Ar2는 각각 독립적으로, 페닐, 비페닐릴, 터페닐릴, 나프틸, 나프틸페닐, 페닐나프틸, 페난트레닐, 트리페닐레닐, 디벤조퓨라닐, 디벤조티오페닐, 카바졸-9-일, 또는 9-페닐-9H-카바졸릴인, 화합물
The method of claim 1,
Ar 1 and Ar 2 are each independently, phenyl, biphenylyl, terphenylyl, naphthyl, naphthylphenyl, phenylnaphthyl, phenanthrenyl, triphenylenyl, dibenzofuranyl, dibenzothiophenyl, carba Zol-9-yl, or 9-phenyl-9H-carbazolyl, the compound
Ar3는 페닐, 비페닐릴, 터페닐릴, 나프틸, 나프틸페닐, 페닐나프틸, 페난트레닐, 또는 트리페닐레닐인, 화합물.
The method of claim 1,
Ar 3 is phenyl, biphenylyl, terphenylyl, naphthyl, naphthylphenyl, phenylnaphthyl, phenanthrenyl, or triphenylenyl.
상기 화학식 1로 표시되는 화합물은, 하기로 구성되는 군으로부터 선택되는 어느 하나인, 화합물:
.
The method of claim 1,
The compound represented by Formula 1 is any one selected from the group consisting of:
.
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