KR20210007176A - Cleaning structure for CMP apparatus - Google Patents

Abstract

According to the present invention, provided is a cleaning structure for a CMP device, which comprises: a cleaning chamber in which a wafer to be moved by a wafer transfer device and a cleaning process of the wafer proceeds; a cleaning liquid spraying means for spraying a cleaning liquid or a drying liquid to the wafer while reciprocating inside the upper portion of the cleaning chamber in a state configured to be located outside the upper side of the cleaning chamber; and NBSA means for spraying nanobubbles, steam, and air to the cleaned wafer while reciprocating inside the upper part of the cleaning chamber in a state configured to be positioned outside the other side of the upper side of the cleaning chamber opposite to the cleaning liquid spraying means.

Description

Cleaning structure for CMP apparatus TECHNICAL FIELD

The present invention relates to a cleaning structure for CMP equipment, and more particularly, a dry means for injecting a Novac 71IPA (HFE: Hydrofluoroeters)-based chemical solution onto a spin-based wafer and an NBSA means for injecting nanobubbles, steam and air into a spin base. The present invention relates to a cleaning structure for CMP equipment that is compactly configured to minimize wafer movement and improve productivity.

In general, the wafer processing process of the semiconductor manufacturing process includes a photoresist coating process, a developing process (Develop & Bake), an etching process, a chemical vapor deposition process, and an ashing process. have. In addition, in the process of performing each of the above processes, a Wet Cleaning Process is performed to remove contaminants and particles attached to the substrate.

In the CMP equipment, the cleaning process includes a loader that loads substrates such as wafers on which the polishing process has been completed, a plurality of cleaning chambers that provide a space in which substrates loaded by the loader are moved and placed, and each cleaning chamber comprises a substrate. A cleaning solution spraying device that cleans the slurry during the polishing process by spraying a cleaning solution on the fields, a rinsing device that sprays pure water to the cleaned substrates to clean the cleaning solution, and sprays fine bubbles, steam, and air to the rinsed substrates A high-temperature pure water rinse device that sprays high-temperature pure water on substrates after the MBSA process, a plurality of substrate drying devices that dry the substrates sprayed with high-temperature pure water at a predetermined temperature, and unloads the substrates after the drying process. It is made by a device such as an unloader.

However, the conventional cleaning process has a structure in which the components are sequentially arranged and a wafer is loaded and unloaded for each component, and thus, there is a problem in that installation space of the components is limited.

On the other hand, in Korean Patent Publication No. 2002-0048911 and Registration Patent No. 10-1226241, a cleaning and drying system for a chemical film using an HFA-based cleaning solution has been disclosed.

However, the conventional cleaning process has a configuration in which the cleaning liquid recovery rate of the cleaning liquid recovery device for recovering the cleaning liquid from the cleaning chamber is low, and thus there is a problem in that the cost is increased.

In addition, in the case of a spraying device that sprays a cleaning liquid into the cleaning chamber, since it has a plurality of spray nozzles corresponding to the number of substrates, it must have a structure in which the cleaning liquid is uniformly supplied and sprayed through each spray nozzle. Since it does not have it, it is impossible to uniformly spray the cleaning liquid for each substrate, and thus, there is a problem that the cleaning efficiency is lowered.

Therefore, the object of the present invention is to minimize the movement of the wafer as the dry means for spraying Novac 71IPA (HFE: Hydrofluoroeters)-based chemicals on the spin base wafer and the NBSA means for spraying nanobubbles, steam, and air are compactly configured on the spin base. Thus, it is to provide a cleaning structure for CMP equipment that can improve productivity.

In addition, an object of the present invention is a system for cleaning wafers using Novac 71IPA (HFE: Hydrofluoroeters)-based chemicals, which has a high thermal conductivity inside the recovery device for recovering the cleaning liquid from the chamber of the cleaning device and has a ball shape. It is to provide a cleaning structure for CMP equipment capable of improving the recovery rate of the cleaning liquid by filling a plurality of cleaning liquid liquids.

On the other hand, the object of the present invention is not limited to the object mentioned above, other objects not mentioned will be clearly understood by those skilled in the art from the following description.

According to the present invention, a cleaning chamber for providing a space in which a wafer to be moved by a wafer transfer device is located and a cleaning process of the wafer proceeds; A cleaning liquid spraying means for spraying a cleaning liquid or a drying liquid onto the wafer while being reciprocally moved to the inside of the upper part of the cleaning chamber while being positioned outside the upper one side of the cleaning chamber; And NBSA means for injecting nanobubbles, steam, and air onto the cleaned wafer while being reciprocated to the inside of the upper portion of the cleaning chamber in a state configured to be located outside the upper other side of the cleaning chamber opposite to the cleaning liquid spraying means. A cleaning structure for equipment is provided.

Here, the cleaning chamber includes: a mount panel; A chamber housing positioned on the upper surface of the mount panel and providing a space; A spin base positioned in a rotatable state inside the chamber housing and on which a wafer is mounted; And a spin unit configured at a lower end of the spin base to rotate the spin base.

In addition, the cleaning liquid spraying means may include an installation post installed on a right side mounting panel of the chamber housing; A storage block installed toward the chamber housing from the installation post; A guide block positioned on the front side of the mount panel; Guide posts installed to be guided to the guide block; A tree post installed toward the storage block from the guide post; And a cleaning liquid spraying nozzle that is installed and fixed on the tree post and is accommodated in the storage block, and when the guide post is reciprocated along the guide block, the guide post enters from the outside of the chamber housing toward the inside and sprays the cleaning liquid or the drying liquid toward the wafer. It is desirable to do.

In addition, the NBSA means includes an installation post installed on the left side mounting panel of the chamber housing; A storage block installed toward the chamber housing from the installation post; A guide block positioned on the rear side of the mount panel; Guide posts installed to be guided to the guide block; A tree post installed toward the storage block from the guide post; And NBSA spray nozzle that is installed and fixed on the tree post and is stored in the storage block, and when the guide post is reciprocated along the guide block, it enters from the outside to the inside of the chamber housing and injects nanobubbles, steam and air toward the wafer. It is preferable to include.

In addition, the cleaning structure for CMP equipment preferably includes a cleaning liquid recovery means for recovering the liquefied cleaning liquid by sucking vaporized gas from the cleaning liquid injected into the cleaning chamber from the cleaning chamber and liquefying it.

In addition, the cleaning liquid recovery means may include a gas suction unit connected to an upper space of the chamber housing to suck vaporized gas from the cleaning liquid injected into the chamber housing; A gas liquefaction unit liquefying the gas sucked through the gas suction unit; And a recovery unit for recovering the cleaning liquid liquefied in the gas liquefaction unit to the cleaning liquid tank.

Therefore, according to the present invention, the dry means for spraying Novac 71IPA (HFE: Hydrofluoroeters)-based chemicals on the spin base wafer and the NBSA means for spraying nanobubbles, steam, and air are compactly configured on the spin base to minimize wafer movement. This can improve productivity.

In addition, in the system for cleaning wafers using Novac 71IPA (HFE: Hydrofluoroeters)-based chemicals, a plurality of cleaning liquid liquids having a high thermal conductivity and a ball shape are contained inside the recovery device that recovers the cleaning liquid from the chamber of the cleaning device. It can be filled to improve the recovery rate of the cleaning liquid.

On the other hand, the effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

1 is a perspective view showing a cleaning structure for CMP equipment according to a preferred embodiment of the present invention;
2 to 4 are a plan view, a side view and a side cross-sectional view showing the cleaning structure for the CMP equipment of FIG. 1; And
5 is a view showing the configuration of a cleaning liquid recovery means in the cleaning structure for CMP equipment of FIG. 1.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

As shown in FIGS. 1 to 5, the cleaning structure 300 for CMP equipment according to a preferred embodiment of the present invention provides a space in which a wafer moved by a wafer transfer device is located and a cleaning process of the wafer proceeds. A cleaning liquid spraying means for spraying a cleaning liquid or a drying liquid onto the wafer while being reciprocated to the inside of the upper part of the cleaning chamber 310 in a state configured to be located outside the upper one side of the cleaning chamber 310 and the cleaning chamber 310 ( 320) and the cleaning solution spraying means (320) in a state of being positioned outside the upper other side of the cleaning chamber 310, and moving reciprocally to the inside of the upper portion of the cleaning chamber 310, and nanobubbles and steam on the cleaned wafer. And NBSA (Nano Bubble, Steam, and CDA) means 330 for injecting air.

Here, the cleaning liquid or the drying liquid generally has a high vapor pressure and a high surface tension, so that its density is higher than that of water, and thus has a high evaporation property and a property of sinking under water when mixed with water, more preferably, Novac 71IPA ( HFE: Hydrofluoroeters) type chemicals are recommended.

The cleaning chamber 310 is a means for providing a space in which a wafer moved by a wafer transfer device is located and a cleaning process of the wafer proceeds, and is located on the upper surface of the mount panel 311 and the mount panel 311. A chamber housing 312 that provides a space for cleaning a wafer, a spin base 313 positioned in a rotatable state inside the chamber housing 312, and a spin base 313 on which a wafer is adsorbed and seated, and a lower portion of the spin base 313 It consists of a spin unit 314 or the like that rotates the base 313.

The cleaning liquid spraying means 320 is a means for spraying a cleaning liquid or a drying liquid onto the wafer while being reciprocally moved to the inside of the upper part of the cleaning chamber 310 in a state configured to be located outside the upper one side of the cleaning chamber 310, An installation post 321 installed at a predetermined height on the right side mounting panel 311 of the housing 312, a storage block 322 extending from the installation post 321 toward the edge of the chamber housing 312, and a mounting panel A guide block 323 positioned on the front side of 311, a guide post 324 configured to be guided to the guide block 323 and installed at a predetermined height, and a storage block 323 from the guide post 324 It is installed and fixed to the tree post 325 and the tree post 325 installed extending toward and is accommodated in the storage block 323, and when the guide post 324 reciprocates along the guide block 323, the chamber housing ( It includes a cleaning liquid spraying nozzle 326 for cleaning the wafer by spraying cleaning liquid or DW or the like toward the wafer while entering and exiting from the outside of 312).

The cleaning liquid spraying nozzle 326 may have a predetermined length in a direction from the edge of the wafer toward the center thereof, and thus, a cleaning liquid dispersion may be formed therein so that the cleaning liquid is evenly dispersed through the spray hole.

Here, the cleaning liquid dispersion is composed of a ball (Baa) type that provides voids for evenly dispersing the cleaning liquid in a plurality of spray holes from a supply pipe supplying the cleaning liquid in a state filled in the cleaning liquid spray nozzle 326 It is good.

Therefore, according to the cleaning liquid spraying means 320, the cleaning liquid spraying nozzle 326 for spraying the cleaning liquid is configured on the outer side of the chamber housing 312 while reciprocating toward the inside of the chamber housing 312 to transfer the cleaning liquid to the rotating wafer. By having a spraying structure, it can be configured to be more compact than the conventional one.

The NBSA means 330 is located outside the upper other side of the cleaning chamber 310 opposite to the cleaning liquid spraying means 320 and moves reciprocally to the inside of the upper portion of the cleaning chamber 310 to the wafer that has been cleaned. As a means for injecting nanobubbles, steam, and air, the installation post 331 installed at a predetermined height on the left side mounting panel 311 of the chamber housing 312, and the chamber housing 312 from the installation post 331 A storage block 332 extending toward the edge, a guide block 333 positioned on the rear side of the mounting panel 311, and a guide post configured to be guided to the guide block 333 and installed at a predetermined height ( 334), a tree post 335 extending from the guide post 334 toward the storage block 332 and a guide post 334 having a state of being installed and fixed in the tree post 335 and received in the storage block 332 When reciprocating along the guide block 333, the NBSA spray nozzle 336 is provided to inject nanobubbles, steam, and air toward the wafer as it enters and exits from the outside of the chamber housing 312 to clean the cleaning liquid of the wafer. Include.

The NBSA injection nozzle 336 may have a predetermined length in a direction from the edge of the wafer toward the center, and thus, a fluid dispersion may be configured inside so that nanobubbles and steam tooth air are evenly distributed through the injection hole. .

Here, the fluid dispersion is composed of a ball type that provides a void so that the fluid is evenly distributed to a plurality of injection holes from a supply pipe supplying a fluid in a state filled in the NBSA injection nozzle 336 It is good.

Therefore, according to the NBSA means 330, the NBSA injection nozzle 336 for injecting nanobubbles, steam, and air is being rotated while reciprocating toward the interior of the chamber housing 312 while being configured on the outer side of the chamber housing 312. By having a structure for spraying a fluid onto the wafer, it can be configured to be more compact than the conventional one.

On the other hand, the cleaning structure 300 for CMP equipment of the present invention, a general chemical solution (Chemical) into the upper interior of the cleaning chamber 310 in a state configured to face each other to the outside of the upper one side of the cleaning chamber 310 A pair of chemical spraying means 340 for cleaning the slurry remaining on the wafer by spraying, and the vaporized gas from the cleaning liquid sprayed into the cleaning chamber 310 from the cleaning chamber 310 is sucked and liquefied to liquefy It further includes a cleaning liquid recovery means 350 for recovering the used cleaning liquid.

The chemical liquid spraying means 340 sprays a general chemical liquid into the upper interior of the cleaning chamber 310 in a state configured to face each other on one side of the upper side of the cleaning chamber 310 to thereby spray the slurry remaining on the wafer. As a means for cleaning, it is perpendicular to the mount panel 311 between the front and right sides of the chamber housing 312 and the mount panel 311 between the rear and left sides of the chamber housing 312 opposite thereto at a predetermined height. A chemical solution supply pipe 342 configured to extend from the installation post 341 to a length corresponding to the upper outer periphery of the chamber housing 312 from the installation post 341 so that the chemical solution is supplied into the chamber housing 312, and It includes a rain panel 343 installed on the outer periphery of the upper surface of the chamber housing 312 corresponding to the end of the chemical liquid supply pipe 342 so that the chemical liquid supplied from the chemical liquid supply pipe 342 flows and is supplied to the wafer.

Therefore, according to the liquid injection means 340, the chemical liquid is supplied from the outside to the inside of the chamber housing 312 through the chemical liquid supply pipe 342, so that it can be configured to be more compact than the conventional one.

The cleaning liquid recovery means 350 is a means for recovering the liquefied cleaning liquid by inhaling and liquefying vaporized gas from the cleaning liquid injected into the chamber housing 312 from the chamber housing 312, the upper space of the chamber housing 312 A gas intake unit 351 that is connected to the unit and sucks vaporized gas from the cleaning liquid injected into the chamber housing 312, a gas liquefaction unit 352 that liquefies the gas sucked through the gas intake unit 351, and a gas And a recovery unit (not shown) for recovering the cleaning liquid liquefied in the liquefaction unit 352 to a cleaning liquid tank (not shown).

Here, the cleaning liquid recovery means 350 further includes a mount unit 353 providing a space for compactly positioning the gas intake unit 351 and the gas liquefaction unit 352 in one frame.

In the mount part 353, a frame having a hexahedron shape is divided into upper and lower spaces, a gas intake part 351 is configured in the upper part, and a gas liquefied part 352 is configured in the lower part, so that the washing liquid recovery means 350 is provided. It can be made to have a compact configuration, and a plurality of casts are configured at the lower end so that, for example, it is good to move easily near a separation tank of a cleaning liquid tank (not shown) having a predetermined volume to a desired location.

The gas intake unit 351 is a means connected to the upper space of the chamber housing 312 to suck vaporized gas from the cleaning liquid injected into the chamber housing 312 and move it to the gas liquefaction unit 352. The gas recovery pipe 351a connecting the upper portion of the housing 312 and the gas liquefaction unit 352 and the gas recovery pipe 351a generate suction flow so that the gas is transferred from the chamber housing 312 to the gas liquefaction unit ( It includes a blowing fan (351b) and the like to be moved to 352.

The gas liquefaction unit 352 is a means for liquefying gas sucked through the gas suction unit 351, and is connected to the gas recovery pipe 351a of the gas suction unit 351 and a liquefaction chamber 352a into which gas is introduced. , The cooling coil pipe 352b configured inside the liquefaction chamber 352a to cool the inside of the liquefaction chamber 352a, and supplying cold air to the cooling coil pipe 352b for cooling the chiller 352c and the liquefaction chamber 352a ), and cooled by the cooling coil pipe 352b to suppress the movement of the gas flowing into the liquefaction chamber 352a, and allow the gas to be liquefied with cooling condensation through contact with the gas ( 352d) and the like.

The liquefaction chamber 352a, more preferably, may be configured to be connected in series to the lower space of the mount portion 353, and through this, the liquefaction chamber 352a is compactly connected to the mount portion 353. Even if configured, it is desirable to provide a high liquefaction rate.

In addition, in the liquefaction chamber 352a, it is preferable that the cooling coil pipe 352b is bent in a zigzag structure, and at this time, a plurality of partition walls provide a gas moving passage in a zigzag structure so that the gas is sufficiently liquefied. good.

In addition, the liquefaction chamber 352a includes an exhaust pipe 352e for exhausting unliquefied gas to the outside through condensation (condensation) inside.

The cooling chiller 352c is a means for configuring a refrigeration cycle apparatus together with a cooling coil pipe 352b that serves as an evaporator, and may have a configuration of a compressor, a condenser, and an expansion valve.

Meanwhile, in the present invention, the cold air circulated in the cooling chiller 352c and the cooling coil pipe 352b is 5 based on 100 parts by weight of the refrigerant together with a known cooling refrigerant (or cooling water) such as R-22. It is preferable that it is provided by platinum powder having a high thermal conductivity of 10 parts by weight.

Here, the cooling air is provided through a platinum powder having 5 to 10 parts by weight based on 100 parts by weight of the refrigerant. When the platinum powder is less than the weight part, the effect of increasing the thermal conductivity is insufficient, and the platinum powder is If it exceeds the negative, the thermal conductivity increases, but compared to the phase change refrigerant, platinum powder having a particle structure precipitates or decreases the moving speed depending on the phase transition state of the refrigerant. It is good to have significance.

The cleaning liquid liquefied body 352d is a means for sufficiently contacting the gas while being cooled by the cooling coil pipe 352b inside the liquefaction chamber 352a and allowing the gas to be liquefied while cooling and condensation. , It is made of platinum or aluminum, which has high thermal conductivity and is light, and has a ball type that provides air gaps that allow gas to move.

Here, the cleaning liquid liquefied body 352d has a material having a high thermal conductivity and a ball-type shape as described above. Compared to having a hexahedral shape, the cleaning liquid liquefied due to condensation when gas is in contact is liquefied along the surface by gravity. The water collection efficiency can be maximized by allowing it to settle while flowing to the bottom of the chamber 352a.

In addition, it is preferable that the cleaning liquid liquefied body 352d further has one or a plurality of through-holes penetrating the ball-type body so as to improve the movement of the gas and increase the contact area to improve the liquefaction rate of the gas.

Therefore, according to the gas liquefaction unit 352, the liquefaction rate of the gas sucked through the gas intake unit 351 is maximized by the plurality of cleaning liquid liquefied bodies 352d, so that the cleaning liquid recovery rate can be maximized.

The recovery unit (not shown) is a recovery means for recovering the cleaning liquid liquefied in the gas liquefaction unit 352 to a cleaning liquid tank (not shown), and a liquefied liquid recovery pipe and a liquefied liquid recovery pipe in which the cleaning liquid is recovered from the gas liquefaction unit 352 A separation tank that separates the washing liquid and water that is connected to and is collected, a return pipe connecting the separation tank and a washing liquid recovery device (not shown) or a washing liquid tank (not shown), a pump coupled to the return pipe, and a control valve configured on the return pipe And the like.

Here, one end of the liquefied liquid recovery pipe is connected to the lower surface of the liquefaction chamber 352a and the other end is connected to the upper part of the separation tank, so that the washing liquid settled and collected at the lower end of the liquefaction chamber 352a flows into the separation tank.

In addition, one end of the return pipe is connected to the lower part of the separation tank, and the other end is connected to a cleaning liquid recovery device (not shown) or a cleaning liquid tank (not shown).

In addition, it is preferable that a water drain pipe through which water is drained is connected to the upper part of the separation tank.

Therefore, according to the cleaning liquid recovery means 350, the loss of the expensive HF-based cleaning liquid sprayed on the substrate to clean the wafer can be minimized through a configuration in which the cleaning liquid gas vaporized after spraying onto the wafer is liquefied and then recovered. .

In addition, when the gas of the cleaning liquid is liquefied in the cleaning liquid recovery means 350, the gas is liquefied while passing through a plurality of cleaning liquid liquefied bodies 352d filled in the liquefaction chamber 352a to improve the liquefaction efficiency of the gas, and the liquefied cleaning liquid It is possible to minimize the loss of cleaning liquid by maximizing the sedimentation and collection efficiency of

Hereinafter, the operation of the cleaning structure for CMP equipment having the configuration as described above will be described as follows.

First, a wafer is supplied to the cleaning chamber 310 by a wafer transfer device and is sucked and seated on the spin base 313 of the chamber housing 312.

Thereafter, the cleaning liquid or the drying liquid is sprayed onto the wafer rotated by the cleaning liquid spraying means 320.

Here, in the wafer cleaning or drying process through the cleaning liquid spraying means 320, the cleaning liquid spraying nozzle 326 is located outside the upper side of the chamber housing 312 by a guide post 324 which is moved along the guide block 323 In this state, the cleaning liquid or the drying liquid is sprayed onto the rotating wafer while reciprocating to the inner center of the chamber housing 312.

At this time, the cleaning liquid or the drying liquid generally has a high vapor pressure and a high surface tension, so that its density is higher than that of water, and thus has a high evaporation property and a property of sinking under water when mixed with water, more preferably, Novac 71IPA ( HFE: Hydrofluoroeters) type chemicals are recommended.

In addition, nanobubbles, steam, and air are sprayed onto the wafer rotated by the NBSA means 330.

Here, the rinsing process of the wafer through the NBSA means 330 is a state in which the NBSA spray nozzle 336 is located outside the upper side of the chamber housing 312 by a guide post 334 that is moved along the guide block 333 The nanobubbles, steam, and air are sprayed onto the rotating wafer while reciprocating to the inner center of the chamber housing 312 in FIG.

On the other hand, at the same time as the wafer cleaning or drying process as described above, after the vaporized gas among the cleaning liquid sprayed into the cleaning chamber 310 from the cleaning chamber 310 is sucked and liquefied by the cleaning liquid recovery means 350 Is recovered.

Here, the cleaning liquid recovery process through the cleaning liquid recovery means 350 is a step of sucking vaporized gas from the cleaning liquid injected into the chamber housing 312 by a gas suction unit 351 connected to the upper portion of the chamber housing 312 Wow, a step in which the gas sucked through the gas intake unit 351 is liquefied by the gas liquefaction unit 352, and the cleaning liquid liquefied in the gas liquefaction unit 352 is transferred to a cleaning liquid tank (not shown) by a recovery unit (not shown). In this case, when the gas of the cleaning liquid is liquefied, the gas is liquefied while passing through a plurality of cleaning liquid liquefied bodies 352d filled in the liquefaction chamber 352a, thereby improving the liquefaction efficiency of the gas. The sedimentation and collection efficiency of the liquefied cleaning liquid is maximized to minimize the loss of the cleaning liquid.

Therefore, according to the above, the cleaning liquid spraying means 320 for spraying the cleaning liquid or the drying liquid and the NBSA means 330 for spraying nanobubbles, steam, and air are located outside the cleaning chamber 310 and By having a structure that moves toward, it does not have a structure in which the cleaning chamber 310, the cleaning liquid spraying means 320 and the NBSA means 330 are sequentially positioned, as in the prior art, and the surroundings of the cleaning chamber 310 are compact. Can be configured to

In addition, in cleaning the wafer using Novac 71IPA (HFE: Hydrofluoroeters)-based chemical solution, the interior of the cleaning liquid recovery means 350 for recovering the cleaning liquid from the cleaning chamber 310 has high thermal conductivity and has a ball shape. The cleaning liquid liquefied body 352d is filled, so that the recovery rate of the cleaning liquid can be improved.

In the above-described present invention, specific embodiments have been described, but various modifications may be implemented without departing from the scope of the present invention. Therefore, the scope of the invention should not be determined by the described embodiments, but should be defined by the claims and the equivalents of the claims.

Claims (8)

A cleaning chamber 310 for providing a space for a wafer to be moved by the wafer transfer device to be positioned and for a wafer cleaning process to proceed;
A cleaning liquid spraying means 320 for spraying a cleaning liquid or a drying liquid onto the wafer while being reciprocally moved to the inside of the upper part of the cleaning chamber 310 in a state configured to be located outside the upper one side of the cleaning chamber 310; And
Nanobubbles, steam, and air are transferred to and from the upper portion of the cleaning chamber 310 while being positioned outside the upper other side of the cleaning chamber 310 opposite the cleaning liquid spraying means 320. Cleaning structure for CMP equipment, characterized in that it comprises a NBSA means (330) for spraying. The method of claim 1, wherein the cleaning chamber 310,
A mount panel 311;
A chamber housing 312 positioned on the upper surface of the mount panel 311 and providing a space;
A spin base 313 on which a wafer is seated and positioned in a rotatable state inside the chamber housing 312; And
A cleaning structure for CMP equipment comprising a spin unit 314 configured at a lower end of the spin base 313 to rotate the spin base 313. The method of claim 2, wherein the cleaning liquid injection means (320),
An installation post 321 installed on the right side mounting panel 311 of the chamber housing 312;
A storage block 322 installed toward the chamber housing 312 from the installation post 321;
A guide block 323 positioned on the front side of the mounting panel 311;
A guide post 324 installed to be able to be guided on the guide block 323;
A tree post 325 installed toward the storage block 323 from the guide post 324; And
It is installed and fixed in the tree post 325 and is stored in the storage block 323, and when the guide post 324 reciprocates along the guide block 323, the wafer is in and out from the outside of the chamber housing 312 Cleaning structure for CMP equipment, characterized in that it comprises a cleaning liquid spray nozzle (326) for spraying the cleaning liquid or the drying liquid toward. The method of claim 2, wherein the NBSA means (330),
An installation post 331 installed on the left side mounting panel 311 of the chamber housing 312;
A storage block 332 installed toward the chamber housing 312 from the installation post 331;
A guide block 333 positioned on the rear side of the mount panel 311;
A guide post 334 installed to be able to be guided on the guide block 333;
A tree post 335 installed toward the storage block 332 from the guide post 334; And
It is installed and fixed in the tree post 335 and is stored in the storage block 332, and when the guide post 334 is guided reciprocating along the guide block 333, the wafer is moved from the outside of the chamber housing 312 to the inside. Cleaning structure for CMP equipment, characterized in that it comprises a NBSA injection nozzle (336) for injecting nanobubbles, steam and air toward. The method of claim 2,
Cleaning for CMP equipment, characterized in that it comprises a chemical spraying means 340 for spraying a general chemical into the upper interior of the cleaning chamber 310 in a state configured outside the upper one side of the cleaning chamber 310 Structure. The method of claim 5, wherein the chemical liquid injection means 340,
An installation post 341 installed on the mount panel 311 of the chamber housing 312;
A chemical solution supply pipe 342 configured to have a length corresponding to the upper outer periphery of the chamber housing 312 from the installation post 341 so that the chemical solution is supplied into the chamber housing 312; And
Characterized in that it comprises a rain panel 343 configured to be installed on the outer periphery of the upper surface of the chamber housing 312 corresponding to the end of the chemical liquid supply pipe 342 so that the chemical liquid supplied from the chemical liquid supply pipe 342 flows and is supplied to the wafer. Cleaning structure for CMP equipment. The method of claim 2,
Cleaning for CMP equipment, characterized in that it comprises a cleaning liquid recovery means 350 for recovering the liquefied cleaning liquid by sucking vaporized gas from the cleaning liquid injected into the cleaning chamber 310 from the cleaning chamber 310 and liquefying it. Structure. The method of claim 7, wherein the cleaning liquid recovery means (350),
A gas intake part 351 connected to the upper space part of the chamber housing 312 to suck vaporized gas from the cleaning liquid sprayed into the chamber housing 312;
A gas liquefaction unit 352 for liquefying the gas sucked through the gas suction unit 351; And
A cleaning structure for CMP equipment, comprising a recovery unit (not shown) for recovering the cleaning liquid liquefied in the gas liquefaction unit 352 to a cleaning liquid tank (not shown).

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