KR20200115040A - Clad sheet for metal mask and metal mask - Google Patents

Abstract

(Problem) Provides a plate material for a metal mask that facilitates handling and enables thinner metal masks to improve productivity of a desirable metal mask, and provides a metal mask using the plate material for metal masks.
(Solution) A substrate layer made of an Fe-based alloy containing at least one of Ni and Co in a range of 30% by mass or more and 50% by mass or less as viewed from a cross section cut in the thickness direction, and on one side of the substrate layer The first carrier layer is provided in pressure contact, the substrate layer and the first carrier layer can be etched with the same etching solution, and the substrate layer is referred to as a clad plate material for a metal mask that is more resistant to etching than the first carrier layer. It is called a metal mask using this clad plate material for metal masks.

Description

Clad plate material and metal mask for metal mask {CLAD SHEET FOR METAL MASK AND METAL MASK}

The present invention relates to a clad plate for a metal mask and a metal mask.

Specifically, as a clad plate for a metal mask having a metal surface capable of forming a corrosion-resistant protective film against an etching solution, and a metal mask using the clad plate for metal masks, for example, a clad for a metal mask for manufacturing a metal mask for an organic EL device It relates to a plate material and a metal mask for organic EL devices.

For example, Patent Document 1 discloses a method of manufacturing a masking jig (metal mask) made of a single type of metal used for manufacturing an organic EL device. This metal mask is manufactured by the process as shown in FIG. In Fig. 1, step (a) is a material preparation step. In this material preparation process, a single-layered metal plate 100a having a thickness T ₁₀₀ made of a single type of metal serving as a metal mask is prepared. This metal plate 100a is made of, for example, a Ne-Ni alloy containing about 36% by mass of Ni (nickel) and about 64% by mass of Fe (iron). This Fe-Ni alloy is a known alloy of 36, and has a small coefficient of linear expansion of about 1.2×10 ⁻⁶ /°C. The thickness T ₁₀₀ of the metal plate 100a is, for example, 10 µm or more and 50 µm or less. Step (b) is a first coating step. In this first coating process, a protective film 101 for forming a predetermined etching pattern is formed on the first surface 100b of the metal plate 100a, and etching is performed on the second surface 100c of the metal plate 100a. A protective film 102 is formed to prevent it. Step (c) is a first etching step. In this first etching process, the metal plate 100a is etched using an etching solution suitable for the Fe-Ni alloy. By this first etching, a portion of the first surface 100b made of an Fe-Ni alloy that does not have the protective film 101 is etched to form, for example, an etching hole 100d. Step (d) is a second coating step. In this second coating process, a protective film 103 for forming a predetermined etching pattern is formed on the second surface 100c of the metal plate 100a, and the first surface 100b and the etching hole of the metal plate 100a are formed. A protective film 104 for preventing etching is formed on (100d). Step (e) is a second etching step. In this second etching step, the metal plate 100a is etched using an etching solution of the same quality as that used in the first etching step. By this second etching, a portion of the second surface 100c made of an Fe-Ni alloy that does not have the protective film 103 is etched, and, for example, an etching hole 100e is formed. Step (f) is a finishing step. In this finishing process, the protective film 103 and the protective film 104 are removed, and the entire surface of the metal plate 100a is cleaned to finish with the metal mask 100. Using a metal plate 100a through such a process, for example, a metal mask having a mask pattern 100f, having a thickness T _{100 that} is approximately equal to that of the metal plate 100a, and having a single layer structure made of an Fe-Ni alloy (100) is obtained.

In addition, for example, Patent Document 2 discloses a method of manufacturing a metal thick film metal mask used for screen printing. This metal mask is manufactured by the process shown in FIG. In Fig. 2, step (a) is a material preparation step. In this material preparation step, a cladding plate 200a having a two-layer structure in which two kinds of metals to be a metal mask are bonded is prepared. Although the thickness of the clad plate 200a is not described in Patent Document 2, it is considered that the clad plate 200a has a thickness T ₂₀₀ corresponding to the metal mask for a thick film. The cladding plate 200a is made of, for example, a first layer 201 made of copper, and a second layer 202 made of stainless steel, which is different from the first layer 201. In addition, since the etching solution suitable for copper and the etching solution suitable for stainless steel are heterogeneous, the first layer 201 made of copper is not etched with an etching solution suitable for the second layer 202 made of stainless steel. The second layer 202 is not etched with an etching solution suitable for the first layer 201 made of copper. Step (b) is a coating step. In this coating process, a protective film 203 for forming a predetermined etching pattern is formed on the surface 201a of the first layer 201, and a predetermined etching pattern is formed on the surface 202a of the second layer 202. To form a protective film 204 for doing so. Step (c) is a first etching step. In this first etching step, the surface 201a of the first layer 201 is etched using an etching solution suitable for copper. By this first etching, a portion of the surface 201a that does not have the protective film 203 of the first layer 201 made of copper is etched to form, for example, an etching hole 201b. At this time, the portion of the surface 202a that does not have the protective film 204 of the second layer 202 made of stainless steel is not etched. Step (d) is a second etching step. In this second etching step, the surface 202a of the second layer 202 is etched using an etching solution suitable for stainless steel different from the first etching step. By this second etching, the portion of the surface 202a that does not have the protective film 204 of the second layer 202 made of stainless steel is etched, so that, for example, an etching hole 202b is formed. At this time, the etching hole 201b that does not have the protective film 203 of the first layer 201 made of copper is not etched. Step (e) is a finishing step. In this finishing process, the protective film 203 and the protective film 204 are removed, and the entire surface of the clad plate material 200a is cleaned and finished with the metal mask 200. Through such a process, using the clad plate 200a, for example, has a mask pattern 200f, has a thickness T _{200 that} is approximately equal to that of the clad plate 200a, and has a two-layer structure made of copper and stainless steel. A mask 200 is obtained.

Japanese Patent No. 643072 Japanese Patent Publication No. 62-21629

In recent years, additional high definition of mask patterns is desired. For this, it is necessary to further reduce the thickness of the metal mask. The thickness of the target metal mask is, for example, 20 µm or less, and preferably 15 µm or less. The thickness T ₁₀₀ of the single-layered metal plate 100a is, for example, 10 µm or more and 50 µm or less, but such a thin metal sheet is liable to cause problems such as wrinkles and breaks. For example, it is technically possible to further thin a metal plate material having a thickness of 20 μm, but a simple thin metal plate material becomes difficult to handle due to a decrease in mechanical strength. It is considered that the above-described two-layered clad plate 200a has a thickness corresponding to that of a metal mask for a thick film. If such a two-layered clad plate is further thinned, the asymmetry of the layer structure in the thickness direction (Z direction shown in Fig. 2) causes a large warpage in the clad plate. Therefore, it is not technically easy to obtain a clad plate material having a thickness of, for example, 20 µm or less. A clad plate material having a large warp is difficult to handle, and it is not easy to manufacture a metal mask. From these circumstances, it is necessary to develop a plate material for a metal mask that enables additional thickness reduction of the metal mask.

In the development of plate materials for metal masks, in addition to thickness reduction and ease of handling, it is expected that the productivity of the metal mask is preferably equally secured in the prior art, and more preferably, the productivity of the metal mask is improved. As a method of manufacturing a metal mask using the above-described single type of metal plate 100a, at least two coating steps and two etching steps are required. In addition, in the method of manufacturing a metal mask using the two-layered clad plate 200a to which different types of metals are bonded, the coating process can be reduced compared to the method of using a single type of metal plate 100a. However, even in the method of using the two-layered clad plate 200a, at least two etching steps are required to form the mask pattern 200f, and the etching solution used in each etching step cannot be shared. Therefore, there is a possibility that a desirable change in the plate material for a metal mask favorably changes the manufacturing process of the metal mask and leads to an improvement in productivity of the metal mask.

It is an object of the present invention to provide a plate material for a metal mask that facilitates handling, enables thinning of a metal mask, and preferably improves productivity of a metal mask, and provides a metal mask using the plate material for metal masks. To do.

The inventors of the present invention discovered that the above problem can be solved by bonding two types of metals that can be etched with the same etching solution in a clad plate having a two-layer structure in which two types of metals are bonded. I thought about the composition.

One of the inventions of a clad plate for a metal mask is a substrate layer made of an Fe-based alloy containing at least one of Ni and Co in a range of 30% by mass or more and 50% by mass or less as viewed from a cross section cut in the thickness direction, and And a first carrier layer press-contacted to one side of the substrate layer, the substrate layer and the first carrier layer can be etched with a same etching solution, and the substrate layer is the etching solution than the first carrier layer It is a clad plate for metal masks with high corrosion resistance. In this invention, when etching is performed using a homogeneous etchant under the same environment, the corrosion loss of the base layer is M _b , and the corrosion loss of the first carrier layer is M _C1 , the base layer and the first It is preferable that the carrier layer satisfies the relationship of M _b /M _{c1 ?} 0.9.

In addition, one of the inventions of the clad plate for a metal mask is a substrate made of an Fe-based alloy containing at least one of Ni and Co in the range of 30% by mass or more and 50% by mass or less when viewed from a cross section cut in the thickness direction. A layer, a first carrier layer press-contacted to one side of the substrate layer, and a second carrier layer press-contacted to the other side of the substrate layer, and the substrate layer and the first carrier layer are of the same etching solution Etching is possible, and the base layer is a clad plate material for a metal mask that is more corrosion resistant to the etching solution than the first carrier layer and the second carrier layer. In the present invention, etching is performed using a homogeneous etching solution under the same environment, the corrosion loss of the substrate layer is referred to as M _b , the corrosion loss of the first carrier layer is referred to as M _{C 1} , and the corrosion of the second carrier layer When the weight loss is M _C2 , it is preferable that the base layer, the first carrier layer, and the second carrier layer satisfy the relationship of M _b /M _{c1 ?} 0.9 and M _b /M _{c2 ?} 0.9.

Using any of the above cladding plates for metal masks, the invention was conceived with a metal mask. That is, one of the inventions based on a metal mask is provided with a cladding plate or the base layer, the first carrier layer, and the second carrier layer for any one of the metal masks having the base layer and the first carrier layer. A metal mask formed using any of the above cladding plates for metal masks, which is a metal mask made of the Fe-based alloy constituting the base layer.

In addition, one of the inventions according to the metal mask is provided with the base layer and the first carrier layer, the cladding plate or the base layer, the first carrier layer, and the second carrier layer for any one of the metal masks A metal mask formed using any of the above cladding plates for metal masks, comprising: a first metal layer made of the Fe-based alloy constituting the base layer, and a second metal layer made of a metal constituting the first carrier layer. And is a metal mask formed by bonding the first metal layer and the second metal layer.

In addition, one of the inventions based on a metal mask is a metal mask formed using a clad plate for a metal mask including the base layer, the first carrier layer, and the second carrier layer, wherein the base layer is A first metal layer made of the Fe-based alloy constituting, a second metal layer made of a metal constituting the first carrier layer, and a third metal layer made of a metal constituting the second carrier layer. It is a metal mask formed by bonding the second metal layer, the first metal layer, and the third metal layer in this order.

According to this invention, a cladding plate material for a metal mask which is easy to handle and enables thinning of the metal mask is obtained. When this cladding plate for metal masks is used, handling is easy, and a thin metal mask can be obtained than before. Moreover, when this clad plate material for metal masks is used, productivity improvement of a metal mask can be expected.

1 is a diagram illustrating a method of manufacturing a metal mask using a single-layered metal plate made of a single type of metal as a conventional technique.
FIG. 2 is a diagram illustrating a method of manufacturing a metal mask using a clad plate having a two-layer structure in which two types of metals are bonded as a conventional technique.
3 is a view showing an example of a cladding plate for a metal mask having a two-layer structure as an embodiment of the present invention.
4 is a diagram showing an example of a cladding plate for a metal mask having a three-layer structure as an embodiment of the present invention.
Fig. 5 is a view showing another example of a cladding plate for a metal mask having a three-layer structure as an embodiment of the present invention.
6 is a diagram showing an example of a metal mask having a single layer structure as an embodiment of the present invention.
7 is a diagram showing another example of a metal mask having a single layer structure as an embodiment of the present invention.
8 is a diagram showing an example of a two-layered metal mask as an embodiment of the present invention.
9 is a diagram showing another example of a two-layered metal mask as an embodiment of the present invention.
10 is a diagram showing an example of a three-layered metal mask as an embodiment of the present invention.
11 is a diagram showing another example of a metal mask having a three-layer structure as an embodiment of the present invention.
12 is a diagram illustrating a method of manufacturing a metal mask using a cladding plate material for a metal mask having a two-layer structure.
13 is a diagram illustrating a method of manufacturing a metal mask using a cladding plate material for a metal mask having a two-layer structure.
14 is a diagram illustrating a method of manufacturing a metal mask using a cladding plate material for a metal mask having a two-layer structure.
15 is a diagram illustrating a method of manufacturing a metal mask using a cladding plate material for a metal mask having a two-layer structure.
16 is a diagram illustrating a method of manufacturing a metal mask using a cladding plate material for a metal mask having a two-layer structure.
Fig. 17 is a diagram illustrating a method of manufacturing a metal mask using a clad plate material for a metal mask having a three-layer structure.
Fig. 18 is a diagram illustrating a method of manufacturing a metal mask using a clad plate material for a metal mask having a three-layer structure.
19 is a diagram illustrating a method of manufacturing a metal mask using a clad plate material for a metal mask having a three-layer structure.
Fig. 20 is a diagram illustrating a method of manufacturing a metal mask using a clad plate material for a metal mask having a three-layer structure.

With respect to this invention, an embodiment in which the cladding plate material for a metal mask according to this invention is embodied will be described.

<First embodiment>

Fig. 3 shows a first embodiment of a clad plate for a metal mask according to the present invention. Fig. 3 is a view viewed from a cross section of a clad plate material 1S for a metal mask (hereinafter referred to as "clad plate material 1S") cut in the thickness direction (Z direction).

The cladding plate 1S has a two-layer structure when viewed from a cross section cut in the thickness direction. The cladding plate 1S (thickness T _1S ) is the first carrier layer 11 (thickness) that is in pressure contact with the base layer 10 (thickness t0) and one side (Z1 side) of the base layer 10 (t1)). The pressure-welding form of the substrate layer 10 and the first carrier layer 11 is a state in which a plate material for constituting the substrate layer 10 and a plate material for constituting the first carrier layer 11 are superposed. It is obtained by rolling (cladding rolling) and performing diffusion annealing as necessary. In addition, the cladding plate 1S is an example of the ``metal mask cladding plate'' in the claims, the base layer 10 is an example of the ``substrate layer'' in the claims, and the first carrier layer 11 is a patent It is an example of the "first carrier layer" of the claims.

The base layer 10 constituting the clad plate 1S can be a main body of a metal mask. In this case, it is possible to obtain a single-layered metal mask composed of a portion of the base layer 10, and a two-layered metal mask composed of a portion of the base layer 10 and the first carrier layer 11 may be obtained. . As described above, the target thickness of the metal mask is, for example, 20 µm or less, and preferably 15 µm or less. In view of this goal, from the viewpoint of thinning, the upper limit of the thickness (T _1S ) of the clad plate 1S or the upper limit of the thickness (t0) of the base layer 10 when the base layer 10 is the main body of the metal mask is It is preferably 20 µm or less, more preferably 15 µm or less, and even more preferably 10 µm or less. In addition, from the viewpoint of ease of handling, the lower limit of the thickness (T _1S ) of the clad plate 1S or the lower limit of the thickness (t0) of the base layer 10 when the base layer 10 is the main body of the metal mask Is preferably 1 µm or more, more preferably 3 µm or more, and even more preferably 5 µm or more. The thickness (T _1S) of the cladding plate (1S) thinner, or if the substrate layer 10 is to be the subject of the metal mask, the more the thickness (t0) of the substrate layer 10 thinner in the side etching in the etching Since the amount is suppressed, the dimensional accuracy of a mask pattern such as an etching hole formed by etching is improved, and it becomes possible to obtain a metal mask having a more precise mask pattern.

The base layer 10 constituting the clad plate 1S is made of an Fe-based alloy. This Fe-based alloy contains at least one of Ni (nickel) and Co (cobalt) in a range of 30% by mass or more and 50% by mass or less. The balance excluding Ni and Co may be Fe (iron) and unavoidable impurities, or may contain one or more additional elements. In addition, it is preferable that the Fe-based alloy containing Ni and Co has 10 mass% or less of Co (that is, 20 mass% or more and 40 mass% or less of Ni). Fe-based alloys containing at least one of Ni and Co in the range of 30% by mass or more and 50% by mass or less with respect to Fe are thermally deformed (twisted) during vapor deposition in the use of a metal mask for an organic EL device, for example. In many cases, the coefficient of linear expansion, which is effective for suppressing the, is small and is suitable for constituting a plate for metal masks. This Fe-based alloy may contain elements (additional elements) other than Ni and Co in a range of 10% by mass or less. The additional elements are, for example, Mn (manganese), Mo (molybdenum), Nb (niobium), and Cr (chromium). Fe-based alloys containing these additive elements in the range of 0% by mass to 10% by mass are preferable as a metal material constituting a plate for metal masks such as 0.2% proof strength, tensile strength, elongation, Young's modulus, hardness, and coefficient of linear expansion. It has the potential to have strength and various characteristics. The substrate layer 10 made of the above-described Fe-based alloy can be etched with a general etching solution suitable for the above-described Fe-based alloy (eg, ferric chloride solution, etc.).

The first carrier layer 11 constituting the clad plate material 1S is press-bonded to one side (Z1 side) of the base layer 10. The first carrier layer 11 is effective for reinforcing the thinned base layer 10 that is the main body of the metal mask, and is effective for improving the mechanical strength of the thin clad plate 1S. The first carrier layer 11 becomes a carrier of the thinned base layer 10, facilitates handling of the thinned base layer 10, and prevents large bending of the clad plate 1S including the base layer 10. Suppression and contributes to the stabilization of etching. In addition, the first carrier layer 11 can be used as a main body of a metal mask, similarly to the base layer 10. In this case, it is also possible to obtain a single-layer metal mask composed of the first carrier layer 11 portion, and also obtain a two-layer metal mask composed of the first carrier layer 11 portion and the base layer 10 portion. It is possible. The thickness t1 of the first carrier layer 11 may be set in consideration of the characteristics of the entire clad plate 1S in addition to the characteristics of the base layer 10. For example, in the case of reinforcing the base layer 10 from the viewpoint of ease of handling, the thickness t1 of the first carrier layer 11 is preferably 5 μm or more and 100 μm or less, more preferably It is 20 micrometers or more and 100 micrometers or less. For example, in the case of using the first carrier layer 11 as the main body of the metal mask, the upper limit of the thickness t1 of the first carrier layer 11 is preferably 20 μm or less, more preferably 15 μm or less. , More preferably, it is 10 micrometers or less.

The first carrier layer 11 can be etched with an etching solution capable of etching the base layer 10. That is, the base layer 10 and the first carrier layer 11 can be simultaneously etched with a homogeneous etching solution (eg, ferric chloride solution). In this invention, in the case where the base layer 10 and the first carrier layer 11 can be etched at the same time, the base layer 10 may have higher corrosion resistance than the first carrier layer 11 with respect to the etching solution. Accordingly, when etching of the base layer 10 and the first carrier layer 11 is simultaneously started with this etching solution, the base layer 10 is more difficult to be etched than the first carrier layer 11, so the first carrier layer ( The etching rate of the base layer 10 can be made slower than that of 11). Therefore, for example, when the etching holes are simultaneously formed for the base layer 10 and the first carrier layer 11, the etching holes formed from the surface of the base layer 10 toward the Z1 side (Z2 side) The depth becomes shallower than the depth of the etching hole in which formation proceeds from the surface (Z1 side) of the first carrier layer 11 toward the Z2 side. When a metal mask plate material (clad plate material (1S)) from which the difference in the depth of the etching hole is obtained is used, the structure of a metal mask having a mask pattern in which the depth of the hole disposed on one side and the depth of the hole disposed on the other side are different. This becomes possible.

In addition, when the clad plate 1S is etched using a homogeneous etching solution under the same environment, the corrosion loss of the base layer 10 is M _b , and the corrosion loss of the first carrier layer 11 is M _C1 . It is preferable that the base layer 10 and the first carrier layer 11 satisfy the relationship of M _b /M _c1 ≤ 0.9. The clad plate material 1S satisfying this relationship ensures that the etching rate of the base layer 10 is higher than that of the first carrier layer 11 when the base layer 10 and the first carrier layer 11 are simultaneously etched. You can do it slow. Accordingly, for example, when the etching hole is to be simultaneously formed, the depth of the etching hole formed from the surface (Z2 side) of the base layer 10 toward the Z1 side is determined as the surface of the first carrier layer 11 (Z1). The depth of the etching hole in which formation proceeds from the side) to the Z2 side can be made surely shallower. In addition, the base layer 10 and the first carrier layer 11 that are etched at the same time satisfy the relationship of M _b /M _c1 >0 (M _b >0, M _c1 >0).

For example, a plate A made of an Fe-based alloy containing about 32% by mass of Ni and about 5.5% by mass of Co, and a plate B made of an Fe-based alloy containing about 36% by mass of Ni are each 40% by mass. ratio (M _a / M _B) of the corrosion weight loss (M _a) and the corrosion loss (M _B) of the plate material B of the sheet material a when the etching with ferric chloride cheolaek (aqueous solution) in the concentration was confirmed to be about 0.89 . When the clad plate 1S is formed by using the plate material A having this relationship for the base layer 10 (thickness t0) and the plate material B for the first carrier layer 11 (thickness t1 = t0) One M _b /M _c1 is about 0.89. Therefore, the base layer 10 and the first carrier layer 11 satisfy the relationship of M _b /M _c1 ≤ 0.9.

It is preferable that the clad plate 1S has a mechanical strength and various properties suitable for a metal mask such as 0.2% proof strength, tensile strength, elongation, Young's modulus, hardness, and coefficient of linear expansion. For example, from the viewpoint of facilitating handling, a clad plate material 1S having a large tensile strength and a large Young's modulus is preferable. In this case, it is preferable that the cladding plate 1S has a tensile strength of 700 MPa or more, and a Young's modulus of 100 GPa or more, in particular, the base layer 10 which is the main body of the metal mask. In addition, for example, in the use of a metal mask for an organic EL element, from the viewpoint of suppressing heating deformation (torsion) during vapor deposition, a clad plate material 1S having small warpage caused by heating is preferable, and a cladding plate material 1S It is preferable that the difference between the coefficient of linear expansion of the base layer 10 constituting a and the coefficient of linear expansion of the first carrier layer 11 is small. In this case, it is preferable that the linear expansion coefficient of the base layer 10 is 5 ppm/° C. or less, and the linear expansion coefficient of the first carrier layer 11 is within ±2 ppm/° C. with respect to the linear expansion coefficient of the base layer 10.

<Second Embodiment>

Fig. 4 shows a second embodiment of the cladding plate for a metal mask according to the present invention. In addition, in FIG. 4, for convenience, reference numerals shown in FIG. 3 are used. Fig. 4 is a view viewed from a cross section of a clad plate material 2S for a metal mask (hereinafter referred to as "clad plate material 2S") cut in the thickness direction (Z direction). The clad plate material 2S shown in FIG. 4 and the clad plate material 1S shown in FIG. 3 have different numbers of layers. The substrate layer 10 and the first carrier layer 11 provided in the clad plate material 2S may have the same configuration as or equivalent to the substrate layer 10 and the first carrier layer 11 provided in the clad plate material 1S. It doesn't have to be a configuration.

The cladding plate material 2S has a three-layer structure when viewed from a cross section cut in the thickness direction. The clad plate material 2S (thickness T _2S ) is the first carrier layer 11 (thickness t0) and the first carrier layer 11 in pressure contact with one side (Z1 side) of the base layer 10 ( A thickness t1) and a second carrier layer 12 (thickness t2) that are pressure-contacted to the other side (Z2 side) of the base layer 10 are provided. The first carrier layer 11 and the second carrier layer 12 shown in FIG. 4 have substantially the same thickness (t1 = t2). The substrate layer 10, the first carrier layer 11, and the second carrier layer 12 are press-bonded, for example, a plate material for constituting the substrate layer 10, and the first carrier layer 11 It is obtained by rolling (cladding rolling) in a superposed state of the plate material for constituting the second carrier layer 12 and the plate material for constituting the second carrier layer 12, and performing diffusion annealing as necessary. In addition, the cladding plate 2S is an example of the ``metal mask cladding plate'' in the claims, the base layer 10 is an example of the ``substrate layer'' in the claims, and the first carrier layer 11 is a patent It is an example of the "first carrier layer" of the claims, and the second carrier layer 12 is an example of the "second carrier layer" of the claims.

The base layer 10 constituting the clad plate 2S can be a main body of a metal mask. In this case, it is possible to obtain a single-layer metal mask composed of a portion of the base layer 10, and a two-layer metal mask composed of a portion of the base layer 10 and the first carrier layer 11 may be obtained. , It is also possible to obtain a metal mask of a two-layer structure consisting of a portion of the substrate layer 10 and a portion of the second carrier layer 12, and the portion of the first carrier layer 11, the portion of the substrate layer 10, and the second It is also possible to obtain a metal mask having a three-layer structure composed of a portion of the carrier layer 12. As described above, the target thickness of the metal mask is, for example, 20 µm or less, and preferably 15 µm or less. In view of this goal, from the viewpoint of thinning, the upper limit of the thickness (T _2S ) of the clad plate 2S or the upper limit of the thickness (t0) of the base layer 10 in the case of using the base layer 10 as the main body of the metal mask is It is preferably 20 µm or less, more preferably 15 µm or less, and even more preferably 10 µm or less. In addition, from the viewpoint of ease of handling, the lower limit of the thickness (T _2S ) of the clad plate 2S or the lower limit of the thickness t0 of the base layer 10 when the base layer 10 is the main body of the metal mask. Is preferably 1 µm or more, more preferably 3 µm or more, and even more preferably 5 µm or more. When the thickness (T _2S), the cladding plate (2S) to a more or substrate layer 10 portions as thin as the main component of the metal mask, the side etching in the etching The thickness (t0) of the substrate layer 10 thin Since the amount is suppressed, the dimensional accuracy of a mask pattern such as an etching hole formed by etching is improved, and it becomes possible to obtain a metal mask having a more precise mask pattern.

The base layer 10 constituting the clad plate 2S is made of an Fe-based alloy. This Fe-based alloy contains at least one of Ni and Co in a range of 30% by mass or more and 50% by mass or less. The balance excluding Ni and Co may be Fe and unavoidable impurities, or may contain one or more additional elements. In addition, it is preferable that the Fe-based alloy containing Ni and Co has 10 mass% or less of Co (that is, 20 mass% or more and 40 mass% or less of Ni). Fe-based alloys containing at least one of Ni and Co in the range of 30% by mass or more and 50% by mass or less with respect to Fe are thermally deformed (twisted) during vapor deposition in the use of a metal mask for an organic EL device, for example. In many cases, the coefficient of linear expansion, which is effective for suppressing the, is small and is suitable for constituting a plate for metal masks. This Fe-based alloy may contain elements (additional elements) other than Ni and Co in a range of 10% by mass or less. Additional elements are, for example, Mn, Mo, Nb, and Cr. Fe-based alloys containing these additive elements in the range of 0% by mass to 10% by mass are preferable as a metal material constituting a plate for metal masks such as 0.2% proof strength, tensile strength, elongation, Young's modulus, hardness, and coefficient of linear expansion. It has the potential to have strength and various characteristics. The substrate layer 10 made of the above-described Fe-based alloy can be etched with a general etching solution suitable for the above-described Fe-based alloy (eg, ferric chloride solution, etc.).

The first carrier layer 11 constituting the clad plate 2S is press-contacted to one side (Z1 side) of the base layer 10. Further, the second carrier layer 12 constituting the clad plate material 2S is pressure-bonded to the other side (Z2 side) of the base layer 10. The first carrier layer 11 and the second carrier layer 12 are effective for reinforcing the thinned base layer 10, which is the main body of a metal mask, and are effective for increasing the mechanical strength of the thin clad plate 2S. Do. The first carrier layer 11 and the second carrier layer 12 become carriers of the thinned base layer 10, facilitate handling of the thinned base layer 10, and include the base layer 10. It contributes to the stabilization of the etching of the clad plate material 2S. In addition, the first carrier layer 11 and the second carrier layer 12 can serve as a main body of a metal mask, similarly to the base layer 10. In this case, it is possible to obtain a single-layered metal mask composed of a portion of the first carrier layer 11, and a single-layered metal mask composed of a portion of the second carrier layer 12 can be obtained, and the first carrier layer ( 11) It is also possible to obtain a two-layer metal mask composed of a portion and a base layer 10 portion, and also obtain a two-layer metal mask composed of a second carrier layer 12 portion and a substrate layer 10 portion. It is possible, and it is also possible to obtain a metal mask having a three-layer structure comprising a portion of the first carrier layer 11, a portion of the base layer 10, and a portion of the second carrier layer 12. In the case of reinforcing the base layer 10 from the viewpoint of ease of handling, the thickness t1 of the first carrier layer 11 and the thickness t2 of the second carrier layer 12 are each preferably 5 It is not less than µm and not more than 100 µm, more preferably not less than 20 µm and not more than 100 µm. When using the first carrier layer 11 or the second carrier layer 12 as the main body of the metal mask, the upper limit of the thickness t1 of the first carrier layer 11 and the thickness of the second carrier layer 12 The upper limit of (t2) is each preferably 20 µm or less, more preferably 15 µm or less, and even more preferably 10 µm or less.

Both the first carrier layer 11 and the second carrier layer 12 can be etched with an etching solution capable of etching the base layer 10. That is, the base layer 10 and the first carrier layer 11, the base layer 10 and the second carrier layer 12, and the first carrier layer 11 and the second carrier layer 12 are each combination In this case, etching can be performed simultaneously with a homogeneous etching solution (eg, ferric chloride solution, etc.). In this invention, when the base layer 10 and the first carrier layer 11 can be etched at the same time, when the base layer 10 and the second carrier layer 12 can be etched at the same time, and the first carrier layer 11 and When the second carrier layer 12 can be etched at the same time, in each case, the base layer 10 may have higher corrosion resistance than the first carrier layer 11 and the second carrier layer 12 with respect to the etching solution. Further, the first carrier layer 11 may have higher corrosion resistance to the same etching solution than the second carrier layer 12, or the second carrier layer 12 may be higher corrosion resistance to the same etching solution than the first carrier layer 11. May be. Accordingly, for example, if the first carrier layer 11 and the second carrier layer 12 are made of the same material and have the same thickness (t1 = t2), the first carrier layer 11 and the second carrier layer ( 12) is simultaneously half-etched to remove the first carrier layer 11 and the second carrier layer 12 at the same time, thereby making the surface of one side (Z1 side) and the other side (Z2 side) of the base layer 10 At the same time, it is possible to obtain a single-layered metal plate made of the base layer 10 by exposure. In this case, by adjusting the conditions of half etching, a clad plate having a three-layer structure provided on both sides of the substrate layer 10 in which each of the first carrier layer 11 and the second carrier layer 12 has a predetermined thickness is obtained. I can. In addition, if the material of the first carrier layer 11 and the second carrier layer 12 is made different from each other, any of the first carrier layer 11 or the second carrier layer 12 is more highly corrosion-resistant with respect to the etching solution. It is also possible to leave only one side with a predetermined thickness. In this case, it is possible to obtain a clad plate having a two-layer structure provided in the base layer 10 with only one of the first carrier layer 11 or the second carrier layer 12 having a predetermined thickness.

With respect to this etchant, the base layer 10 has higher corrosion resistance than the first carrier layer 11 and the second carrier layer 12. Accordingly, when the above-described two-layered clad plate is etched with this etching solution, the base layer 10 is more difficult to be etched than the first carrier layer 11 (or the second carrier layer 12). The etching rate of the base layer 10 can be made slower than the etching rate of the first carrier layer 11 (or the second carrier layer 12). Therefore, for example, when forming an etching hole at the same time for a clad plate of a two-layer structure including the base layer 10 and the first carrier layer 11, the Z1 side from the surface (Z2 side) of the base layer 10 The depth of the etching hole in which formation is progressed toward is smaller than the depth of the etching hole in which formation is progressed from the surface (Z1 side) of the first carrier layer 11 toward the Z2 side. Alternatively, when etching holes are simultaneously formed for a clad plate having a two-layer structure including the base layer 10 and the second carrier layer 12, it is formed from the surface of the base layer 10 (Z1 side) toward the Z2 side. The depth of the etching hole that proceeds becomes shallower than the depth of the etching hole in which formation proceeds from the surface (Z2 side) of the second carrier layer 12 toward the Z1 side. If a metal mask plate material (clad plate (2S)) from which the difference in the depth of the etching hole is obtained is used, the construction of a metal mask having a mask pattern in which the depth of the hole disposed on one side and the depth of the hole disposed on the other side are different. This becomes possible.

In addition, under the same environment, the clad plate 2S is etched using the same etching solution, so that the corrosion loss of the substrate layer 10 is referred to as M _b , and the corrosion loss of the first carrier layer 11 is referred to as M _{C 1} , When the corrosion loss of the second carrier layer 12 is M _C2 , the base layer 10, the first carrier layer 11, and the second carrier layer 12 are M _b /M _c1 ≤0.9 and M _b / It is desirable to satisfy the relationship of M _c2 ≤ 0.9. The cladding plate 2S satisfying this relationship ensures that the etching rate of the base layer 10 is higher than that of the first carrier layer 11 when the base layer 10 and the first carrier layer 11 are simultaneously etched. It can be made slow, or when the base layer 10 and the 2nd carrier layer 12 are etched simultaneously, the etching rate of the base material layer 10 can be made significantly slower than the etching rate of the 2nd carrier layer 12. Accordingly, for example, when the etching hole is to be simultaneously formed, the depth of the etching hole formed from the surface (Z2 side) of the base layer 10 toward the Z1 side is determined as the surface of the first carrier layer 11 (Z1). Side) to the Z2 side, or the depth of the etching hole formed from the surface of the base layer 10 toward the Z2 side from the surface (Z1 side) to the second It is possible to make it surely shallower than the depth of the etching hole in which formation proceeds from the surface of the carrier layer 12 toward the Z1 side (Z2 side). In addition, the substrate layer 10 and the first carrier layer 11 etched at the same time satisfy the relationship of M _b /M _c1 >0 (M _b >0, M _c1 >0), or the substrate layer etched at the same time ( 10) and the second carrier layer 12 satisfy the relationship of M _b /M _c2 >0 (M _b >0, M _c2 >0). Further, the first carrier layer 11 and the second carrier layer 12 may satisfy the relationship of M _c1 /M _c2 ≤ 0.9, or may satisfy the relationship of M _c2 /M _c1 ≤ 0.9. .

It is preferable that the clad plate 2S has mechanical strength and various properties suitable for a metal mask such as 0.2% proof strength, tensile strength, elongation, Young's modulus, hardness, and coefficient of linear expansion. For example, from the viewpoint of facilitating handling, a clad plate material 2S having a large tensile strength and a large Young's modulus is preferable. In this case, it is preferable that the cladding plate material 2S has a tensile strength of 700 MPa or more and a Young's modulus of 100 GPa or more, especially the base layer 10 which is the main body of the metal mask. In addition, for example, in the use of a metal mask for an organic EL element, from the viewpoint of suppressing heating deformation (torsion) during vapor deposition, a clad plate material 2S having small warpage caused by heating is preferable, and a clad plate material 2S It is preferable that the difference between the linear expansion coefficient of the base layer 10 constituting the, the linear expansion coefficient of the first carrier layer 11, and the linear expansion coefficient of the second carrier layer 12 is small. In this case, the linear expansion coefficient of the substrate layer 10 is 5 ppm/°C or less, and the linear expansion coefficient of the first carrier layer 11 and the linear expansion coefficient of the second carrier layer 12 are respectively It is preferably within ±2ppm/℃.

<Third embodiment>

Fig. 5 shows a third embodiment of the clad plate material for a metal mask according to this invention. In addition, in FIG. 5, for convenience, reference numerals shown in FIGS. 3 and 4 are used. Fig. 5 is a view seen from a cross section of a clad plate material 3S for a metal mask (hereinafter referred to as "clad plate material 3S") cut in the thickness direction (Z direction). The clad plate material 3S shown in FIG. 5 and the clad plate material 2S shown in FIG. 4 have different thicknesses of the second carrier layer 12 (for convenience, the symbol of either thickness is also indicated as t2). The base layer 10, the first carrier layer 11, and the second carrier layer 12 constituting the clad plate material 3S have the thickness t1 of the first carrier layer 11 and the second carrier layer 12 ), except that the thickness t2 is different (t1>t2), and the base layer 10, the first carrier layer 11, and the second carrier layer 12 constituting the above-described clad plate 2S It may be an equivalent configuration, or may not be an equivalent configuration.

The clad plate material 3S has a three-layer structure when viewed from a cross section cut in the thickness direction. The cladding plate material 3S (thickness (T _3S )) is the first carrier layer 11 (thickness (t0)) and the first carrier layer 11 (the first carrier layer 11) in pressure contact with one side (Z1 side) of the base layer 10 ( A thickness t1) and a second carrier layer 12 (thickness t2) that are pressure-contacted to the other side (Z2 side) of the base layer 10 are provided. The first carrier layer 11 and the second carrier layer 12 shown in FIG. 5 have different thicknesses (t1>t2). Moreover, the thickness t2 of the 2nd carrier layer 12 may be thicker than the thickness t1 of the 1st carrier layer 11, for example, as for the cladding plate material 3S (t1 <t2). The substrate layer 10, the first carrier layer 11, and the second carrier layer 12 are press-bonded, for example, a plate material for constituting the substrate layer 10, and the first carrier layer 11 It is obtained by rolling (cladding rolling) in a superposed state of the plate material for constituting the second carrier layer 12 and the plate material for constituting the second carrier layer 12, and performing diffusion annealing as necessary. In addition, the cladding plate material 3S is an example of the ``metal mask cladding plate'' in the claims, the base layer 10 is an example of the ``base layer'' in the claims, and the first carrier layer 11 is a patent It is an example of the "first carrier layer" of the claims, and the second carrier layer 12 is an example of the "second carrier layer" of the claims.

The base layer 10 constituting the clad plate 3S can be a main body of a metal mask. In this case, it is possible to obtain a single-layer metal mask composed of a portion of the base layer 10, and a two-layer metal mask composed of a portion of the base layer 10 and the first carrier layer 11 may be obtained. , It is also possible to obtain a metal mask of a two-layer structure consisting of a portion of the substrate layer 10 and a portion of the second carrier layer 12, and the portion of the first carrier layer 11, the portion of the substrate layer 10, and the second It is also possible to obtain a metal mask having a three-layer structure composed of the carrier layer 12 portion. As described above, the target thickness of the metal mask is, for example, 20 µm or less, and preferably 15 µm or less. In view of this goal, from the viewpoint of thinning, the upper limit of the thickness (T _3S ) of the clad plate 3S or the upper limit of the thickness t0 of the base layer 10 when the base layer 10 is the main body of the metal mask is It is preferably 20 µm or less, more preferably 15 µm or less, and even more preferably 10 µm or less. In addition, from the viewpoint of ease of handling, the lower limit of the thickness (T _3S ) of the clad plate 3S or the lower limit of the thickness (t0) of the base layer 10 when the base layer 10 is used as the main body of the metal mask Is preferably 1 µm or more, more preferably 3 µm or more, and even more preferably 5 µm or more. When the thickness (T _3S) of the cladding plate (3S) to a more or substrate layer 10 portions as thin as the main component of the metal mask, the side etching in the etching The thickness (t0) of the substrate layer 10 thin Since the amount is suppressed, the dimensional accuracy of a mask pattern such as an etching hole formed by etching is improved, and it becomes possible to obtain a metal mask having a more precise mask pattern.

The base layer 10 constituting the clad plate 3S is made of an Fe-based alloy. This Fe-based alloy contains at least one of Ni and Co in a range of 30% by mass or more and 50% by mass or less. The balance excluding Ni and Co may be Fe and unavoidable impurities, or may contain one or more additional elements. In the Fe-based alloy containing Ni and Co, it is preferable that Co is 10 mass% or less (that is, Ni is 20 mass% or more and 40 mass% or less). Fe-based alloys containing at least one of Ni and Co in the range of 30% by mass or more and 50% by mass or less with respect to Fe are thermally deformed (twisted) during vapor deposition in the use of a metal mask for an organic EL device, for example. In many cases, the coefficient of linear expansion, which is effective for suppressing the, is small and is suitable for constituting a plate for metal masks. This Fe-based alloy may contain elements (additional elements) other than Ni and Co in a range of 10% by mass or less. Additional elements are, for example, Mn, Mo, Nb, and Cr. Fe-based alloys containing these additive elements in the range of 0% by mass to 10% by mass are preferable mechanical strength as a metal material constituting a plate for metal masks such as 0.2% proof strength, tensile strength, elongation, Young's modulus, hardness, and coefficient of linear expansion. And it is possible to have various characteristics. The substrate layer 10 made of the above-described Fe-based alloy can be etched with a general etching solution suitable for the above-described Fe-based alloy (eg, ferric chloride solution, etc.).

The first carrier layer 11 constituting the clad plate material 3S is press-contacted to one side (Z1 side) of the base layer 10. In addition, the second carrier layer 12 constituting the clad plate material 3S is press-contacted to the other side (Z2 side) of the base layer 10. The first carrier layer 11 and the second carrier layer 12 are effective for reinforcing the thinned base layer 10, which is the main body of a metal mask, and are effective for increasing the mechanical strength of the thin clad plate 3S. Do. The first carrier layer 11 and the second carrier layer 12 become carriers of the thinned base layer 10, facilitate handling of the thinned base layer 10, and include the base layer 10. It contributes to the stabilization of the etching of the clad plate material 3S. In addition, the first carrier layer 11 and the second carrier layer 12 can serve as a main body of a metal mask, similarly to the base layer 10. In this case, it is possible to obtain a single-layered metal mask composed of a portion of the first carrier layer 11, and a single-layered metal mask composed of a portion of the second carrier layer 12 can be obtained, and the first carrier layer ( 11) It is also possible to obtain a two-layer metal mask composed of a portion and a base layer 10 portion, and also obtain a two-layer metal mask composed of a second carrier layer 12 portion and a substrate layer 10 portion. It is possible, and it is also possible to obtain a metal mask having a three-layer structure comprising a portion of the first carrier layer 11, a portion of the base layer 10, and a portion of the second carrier layer 12. In the case of reinforcing the base layer 10 from the viewpoint of ease of handling, the thickness t1 of the first carrier layer 11 and the thickness t2 of the second carrier layer 12 are preferably It is 5 micrometers or more and 100 micrometers or less, More preferably, it is 20 micrometers or more and 100 micrometers or less. When using the first carrier layer 11 or the second carrier layer 12 as the main body of the metal mask, the upper limit of the thickness t1 of the first carrier layer 11 and the thickness of the second carrier layer 12 The upper limit of (t2) is each preferably 20 µm or less, more preferably 15 µm or less, and even more preferably 10 µm or less.

Both the first carrier layer 11 and the second carrier layer 12 can be etched with an etching solution capable of etching the base layer 10. That is, the base layer 10 and the first carrier layer 11, the base layer 10 and the second carrier layer 12, and the first carrier layer 11 and the second carrier layer 12 are each combination In this case, etching can be performed simultaneously with a homogeneous etching solution (eg, ferric chloride solution, etc.). In this invention, when the base layer 10 and the first carrier layer 11 can be etched at the same time, when the base layer 10 and the second carrier layer 12 can be etched at the same time, and the first carrier layer 11 and When the second carrier layer 12 can be etched at the same time, in each case, the base layer 10 may have higher corrosion resistance than the first carrier layer 11 and the second carrier layer 12 with respect to the etching solution. In addition, the first carrier layer 11 may have higher corrosion resistance to the same etching solution than the second carrier layer 12, or the second carrier layer 12 may have higher corrosion resistance to the same etching solution than the first carrier layer 11. It is good. Accordingly, for example, by half-etching the first carrier layer 11 and the second carrier layer 12 having different thicknesses (eg, t1> t2) at the same time, a part of the first carrier layer 11 and the second The first carrier layer 11 is predetermined on the other side (Z1 side) of the base layer 10 by exposing only the surface of one side (Z2 side) of the base layer 10 by simultaneously removing all of the carrier layer 12 It is possible to obtain a two-layered clad plate material having a thickness of. In addition, the cladding plate of such a two-layer structure is constituted by making the material of the first carrier layer 11 and the second carrier layer 12 different, for example, and the first carrier layer ( It is also possible to obtain by leaving only one of 11) or the second carrier layer 12 at a predetermined thickness. In this case, by adjusting the half-etching conditions, each of the first carrier layer 11 and the second carrier layer 12 has a predetermined thickness, and a three-layered clad plate provided on both sides of the base layer 10 is prepared. It is possible to get.

With respect to this etchant, the base layer 10 has higher corrosion resistance than the first carrier layer 11 and the second carrier layer 12. Accordingly, when the above-described two-layered clad plate is etched with this etchant, the substrate layer 10 is more difficult to be etched than the first carrier layer 11 (or the second carrier layer 12). The etching rate of the base layer 10 can be made slower than the etching rate of the first carrier layer 11 (or the second carrier layer 12). Therefore, for example, when forming an etching hole at the same time for a clad plate of a two-layer structure including the base layer 10 and the first carrier layer 11, the Z1 side from the surface (Z2 side) of the base layer 10 The depth of the etching hole in which formation is progressed toward is smaller than the depth of the etching hole in which formation is progressed from the surface (Z1 side) of the first carrier layer 11 toward the Z2 side. Alternatively, when etching holes are simultaneously formed for a clad plate having a two-layer structure including the base layer 10 and the second carrier layer 12, it is formed from the surface of the base layer 10 (Z1 side) toward the Z2 side. The depth of the etching hole that proceeds becomes shallower than the depth of the etching hole in which formation proceeds from the surface (Z2 side) of the second carrier layer 12 toward the Z1 side. If a plate material for a metal mask (clad plate material 3S) from which the difference in the depth of the etched hole is obtained is used, a metal mask having a mask pattern in which the depth of the hole disposed on one side and the depth of the hole disposed on the other side is different. Configuration becomes possible.

In addition, under the same environment, the clad plate material 3S is etched using the same etching solution, so that the corrosion loss of the base layer 10 is referred to as M _b , and the corrosion loss of the first carrier layer 11 is referred to as M _{C 1} , When the corrosion loss of the second carrier layer 12 is M _C2 , the base layer 10, the first carrier layer 11, and the second carrier layer 12 are M _b /M _c1 ≤0.9 and M _b / It is desirable to satisfy the relationship of M _c2 ≤ 0.9. The clad plate material 3S satisfying this relationship ensures that the etching rate of the base layer 10 is higher than that of the first carrier layer 11 when the base layer 10 and the first carrier layer 11 are simultaneously etched. It can be made slow, or when the base layer 10 and the 2nd carrier layer 12 are etched simultaneously, the etching rate of the base material layer 10 can be made significantly slower than the etching rate of the 2nd carrier layer 12. Accordingly, for example, when the etching hole is to be simultaneously formed, the depth of the etching hole formed from the surface (Z2 side) of the base layer 10 toward the Z1 side is determined as the surface of the first carrier layer 11 (Z1). Side) to the Z2 side, or the depth of the etching hole formed from the surface of the base layer 10 toward the Z2 side from the surface (Z1 side) to the second It is possible to make it surely shallower than the depth of the etching hole in which formation proceeds from the surface (Z2 side) of the carrier layer 12 toward the (Z1) side. In addition, the substrate layer 10 and the first carrier layer 11 etched at the same time satisfy the relationship of M _b /M _c1 >0 (M _b >0, M _c1 >0), or the substrate layer etched at the same time ( 10) and the second carrier layer 12 satisfy the relationship of M _b /M _c2 >0 (M _b >0, M _c2 >0). Further, the first carrier layer 11 and the second carrier layer 12 may satisfy the relationship of M _c1 /M _c2 ≤ 0.9, or may satisfy the relationship of M _c2 /M _c1 ≤ 0.9. .

It is preferable that the clad plate 3S has a mechanical strength and various properties suitable for a metal mask such as 0.2% proof strength, tensile strength, elongation, Young's modulus, hardness, and coefficient of linear expansion. For example, from the viewpoint of facilitating handling, a clad plate material 3S having a large tensile strength and a large Young's modulus is preferable. In this case, it is preferable that the cladding plate material 3S has a tensile strength of 700 MPa or more and a Young's modulus of 100 GPa or more, particularly the base layer 10 which is the main body of the metal mask. In addition, for example, in the use of a metal mask for organic EL devices, from the viewpoint of suppressing heating deformation (torsion) during evaporation, a clad plate material 3S having small warpage caused by heating is preferable, and a clad plate material 3S It is preferable that the difference between the linear expansion coefficient of the base layer 10 constituting the, the linear expansion coefficient of the first carrier layer 11, and the linear expansion coefficient of the second carrier layer 12 is small. In this case, the linear expansion coefficient of the substrate layer 10 is 5 ppm/°C or less, and the linear expansion coefficient of the first carrier layer 11 and the linear expansion coefficient of the second carrier layer 12 are respectively It is preferably within ±2ppm/℃.

An embodiment (product example) in which the metal mask according to the present invention can be manufactured using the above-described metal mask cladding plate material (first embodiment, second embodiment, and third embodiment) will be described. .

<Example 1>

Fig. 6 shows a first product example of a metal mask according to this invention. 6 is a view seen from a cross section of the metal mask 1M cut in the thickness direction (Z direction). The metal mask 1M is a mask pattern and has, for example, an etching hole 1f. When viewed from a cross section cut in the thickness direction, the metal mask 1M has a single layer structure. The main body of the metal mask 1M is the base portion 10M. The substrate portion 10M is, for example, a portion of the substrate layer 10 constituting the clad plate material 1S shown in FIG. 3, a portion of the substrate layer 10 constituting the clad plate material 2S shown in FIG. 4, or FIG. It consists of the base layer 10 part which comprises the clad plate material 3S shown in FIG. The metal mask 1M is thinned, and the thickness T _1M is 20 μm or less (preferably 15 μm or less). The metal mask 1M thinned in this way has high dimensional accuracy of a mask pattern such as the etching hole 1f formed by etching, and has a more highly detailed mask pattern. The thickness T _1M of the metal mask 1M is, for example, the thickness of the base layer 10 constituting the clad plate 1S, the thickness of the base layer 10 constituting the clad plate 2S, or the clad It may be equal to the thickness of the substrate layer 10 constituting the plate material 3S (T _1M = t0), or may be made to be equal or less thin by half etching or the like (T _1M <t0).

<Modification example of first product example>

Fig. 7 shows a modified example of the first product example of the metal mask according to the present invention. 7 is a view seen from a cross section of the metal mask 1Ma cut in the thickness direction (Z direction). The metal mask 1Ma has, for example, an etching hole 1f as a mask pattern. When viewed from a cross section cut in the thickness direction, the metal mask 1Ma consists of a single-layer structure portion and a two-layer structure portion. The single-layer structure portion is the main body of the metal mask 1Ma, and is made of the base portion 10M. The two-layer structure portion includes a base portion 10M and a frame portion 11f for reinforcing the main body of the metal mask 1Ma. The substrate portion 10M is, for example, a portion of the substrate layer 10 constituting the clad plate material 1S shown in FIG. 3, a portion of the substrate layer 10 constituting the clad plate material 2S shown in FIG. 4, or It consists of a part of the base material layer 10 which comprises the clad plate material 3S shown in 5. The frame portion 11f is, for example, a portion of the first carrier layer 11 constituting the clad plate material 1S shown in Fig. 3, and the first carrier layer 11 constituting the clad plate material 2S shown in Fig. 4 It consists of a part or a part of the 1st carrier layer 11 which comprises the clad plate material 3S shown in FIG. The frame portion 11f is arranged annularly at the marginal portion of the base layer 10. The metal mask 1Ma having the frame portion 11 is a metal mask that is easy to handle because the mechanical strength is improved when the thickness of the main body of the metal mask is approximately equal to that of the metal mask 1M shown in FIG. 6. Becomes. The frame portion 11f is annularly arranged at the marginal portion of the base portion 10M, but may not be arranged annularly at the marginal portion of the base portion 10M, or may be arranged on the opposite side of the base portion 10M. . In addition, the configuration of the frame portion 11f is not limited to the above. For example, the frame part 11f is the base layer 10 part of the clad plate material 1S shown in FIG. 3, the base material layer 10 part of the clad board material 2S shown in FIG. 4, or the clad plate material shown in FIG. It is possible to configure with any of the portions of the base layer 10 of (3S). When the frame portion 11f is formed from the base layer 10 portion, the metal mask has a single layer structure. In addition, the frame part 11f is composed of either the second carrier layer 12 portion of the clad plate 2S shown in FIG. 4 or the second carrier layer 12 portion of the clad plate 3S shown in FIG. 5 It is possible to do.

The metal mask 1Ma is thin, and its thickness T _1Ma is 20 μm or less (preferably 15 μm or less). The metal mask 1Ma thinned in this way has a high-definition mask pattern with high dimensional accuracy of the mask pattern such as the etching hole 1f formed by etching. The thickness of the metal mask (1Ma) (T _1Ma) is, for example, the thickness of the cladding plate material substrate layer (10) constituting the thickness of the cladding plate (2S) of the substrate layer (10) constituting the (1S), or cladding It may be equal to the thickness of the base layer 10 constituting the plate material 3S (T _1Ma = t0), or may be made thin to the same level by half etching or the like (T _1Ma <t0). The thickness (T _X ) of the frame portion 11f is, for example, the thickness of the first carrier layer 11 constituting the clad plate material 1S and the first carrier layer 11 constituting the clad plate material 2S. The thickness may be equal to or equal to the thickness of the first carrier layer 11 constituting the clad plate 3S (T _X = t1), or may be made thin to the same level by half etching or the like (T _X <t1). In addition, the total thickness (T _1Ma + T _X ) of the above-described thickness (T _1Ma ) and the thickness (T _X ) may be regarded as the thickness of the metal mask 1Ma.

<2nd product example>

Fig. 8 shows a second product example of the metal mask according to the present invention. 8 is a view seen from a cross section of the metal mask 2M cut in the thickness direction (Z direction). The metal mask 2M has, for example, an etching hole 2f as a mask pattern. When viewed from a cross section cut in the thickness direction, the metal mask 2M has a two-layer structure. The main body of the metal mask 2M is composed of a base portion 10M and a carrier portion 12M. The substrate portion 10M is made of, for example, a portion of the substrate layer 10 constituting the clad plate material 2S shown in FIG. 4 or a portion of the substrate layer 10 constituting the clad plate material 3S shown in FIG. 5. The carrier portion 12M is, for example, a portion of the second carrier layer 12 constituting the clad plate material 2S shown in Fig. 4 or the second carrier layer 12 constituting the clad plate material 3S shown in Fig. 5 Consists of parts. In addition, the configuration of the carrier portion 12M is not limited to the above. For example, the carrier portion 12M, the first carrier layer 11 portion of the clad plate material 1S shown in Fig. 3, the first carrier layer 11 portion of the clad plate material 2S shown in Fig. 4, or Any of the first carrier layers 11 of the clad plate material 3S shown in 5 can be used. When the carrier portion 12M is formed from the portion of the first carrier layer 11 of the clad plate material 1S shown in FIG. 3, the substrate portion 10M is the substrate layer 10 of the clad plate material 1S shown in FIG. It is possible to consist of parts.

The metal mask 2M is thinned, and the thickness T _2M is 20 µm or less (preferably 15 µm or less). The metal mask 2M thinned in this way has a high-definition mask pattern with high dimensional accuracy of the mask pattern such as the etching hole 2f formed by etching. The thickness of the metal mask (2M) (T _2M) is, for example, constituting the clad plate (2S) thickness or clad plates (3S) of the total of the base layer 10 and second carrier layer 12 of the It may be equal to the total thickness of the base layer 10 and the second carrier layer 12 (T _2M = t0 + t2), or may be thinned to equal or less by half etching (T _2M <t0 + t2). The thickness (T _Y ) of the carrier portion 12M is, for example, the thickness of the second carrier layer 12 constituting the clad plate material 2S or the second carrier layer 12 constituting the clad plate material 3S. It may be equal to the thickness (T _Y = t2), or may be thinned to equal or less by half etching (T _Y <t2).

<Modification of the second product example>

A modified example of the second product example of the metal mask according to the present invention is shown in Fig. 9. Fig. 9 is a view seen from a cross section of the metal mask 2Ma cut in the thickness direction (Z direction). The metal mask 2Ma has, for example, an etching hole 2f as a mask pattern. When viewed from a cross section cut in the thickness direction, the metal mask 2Ma consists of a two-layer structure portion and a three-layer structure portion. The two-layer structure portion is the main body of the metal mask 2Ma, and includes a base portion 10M and a carrier portion 12M. The three-layer structure portion includes a base portion 10M, a carrier portion 12M, and a frame portion 11f for reinforcing the main body of the metal mask 2Ma. The substrate portion 10M is made of, for example, a portion of the substrate layer 10 constituting the clad plate material 2S shown in FIG. 4 or a portion of the substrate layer 10 constituting the clad plate material 3S shown in FIG. 5. The carrier portion 12M is, for example, a portion of the second carrier layer 12 constituting the clad plate material 2S shown in Fig. 4 or the second carrier layer 12 constituting the clad plate material 3S shown in Fig. 5 Consists of parts. The frame portion 11f is, for example, a portion of the first carrier layer 11 constituting the clad plate material 2S shown in Fig. 4 or the first carrier layer 11 constituting the clad plate material 3S shown in Fig. 5 Consists of parts. The frame portion 11f is arranged annularly at the marginal portion of the base layer 10. The metal mask 2Ma having the frame portion 11 is a metal mask that is easy to handle because the mechanical strength is improved when the thickness of the main body of the metal mask is approximately equal to that of the metal mask 2M shown in FIG. 8. Becomes. The frame portion 11f is arranged annularly in the marginal portion of the base portion 10M, but may not be arranged annularly at the marginal portion of the base portion 10M, and may be arranged on the opposite side of the base portion 10M. good. In addition, the configuration of the frame portion 11f is not limited to the above. For example, the frame part 11f is composed of either the base layer 10 part of the clad plate 2S shown in FIG. 4 or the base layer 10 part of the clad board 3S shown in FIG. 5. It is possible. When the frame portion 11f is formed from a portion of the substrate layer 10, the metal mask has a two-layer structure of the substrate layer 10 and the carrier portion 12M. In addition, the configuration of the carrier portion 12M is not limited to the above. For example, the carrier portion 12M is a portion of the first carrier layer 11 constituting the clad plate material 2S shown in Fig. 4 or the first carrier layer 11 constituting the clad plate material 3S shown in Fig. 5 It is possible to make up any of the parts.

The metal mask 2Ma is thin, and the thickness T _2Ma is 20 µm or less (preferably 15 µm or less). The metal mask 2Ma thinned in this way has a high-definition mask pattern with high dimensional accuracy of the mask pattern such as the etching hole 2f formed by etching. The thickness of the metal mask (2Ma) (T _2Ma) is, for example, constituting the clad plate (2S) thickness or clad plates (3S) of the total of the base layer 10 and second carrier layer 12 of the It may be equal to the total thickness of the base layer 10 and the second carrier layer 12, or may be thinned to equal or less by half etching or the like (T _2Ma <t0 + t2). The thickness (T _Y ) of the carrier portion 12M is, for example, the thickness of the second carrier layer 12 constituting the clad plate material 2S or the second carrier layer 12 constituting the clad plate material 3S. It may be equal to the thickness (T _Y = t2), or it may be thinned to equal or less by half etching (T _Y <t2). The thickness (T _X ) of the frame portion 11f is, for example, the thickness of the first carrier layer 11 constituting the clad plate material 2S or the first carrier layer 11 constituting the clad plate material 3S. It may be equal to the thickness (T _X = t1), or it may be made thin to be equal to or less than the same by half etching (T _X <t1). In addition, the total thickness (T _2Ma + T _X ) of the above-described thickness (T _2Ma ) and the thickness (T _X ) may be regarded as the thickness of the metal mask 2Ma.

<3rd product example>

Fig. 10 shows a third product example of the metal mask according to the present invention. 10 is a view seen from a cross section of the metal mask 3M cut in the thickness direction (Z direction). The metal mask 3M has, for example, an etching hole 3f as a mask pattern. When viewed from a cross section cut in the thickness direction, the metal mask 3M has a three-layer structure. The main body of the metal mask 3M is composed of a base portion 10M, a first carrier portion 11M, and a second carrier portion 12M. The substrate portion 10M is made of, for example, a portion of the substrate layer 10 constituting the clad plate material 2S shown in FIG. 4 or a portion of the substrate layer 10 constituting the clad plate material 3S shown in FIG. 5. The first carrier portion 11M is, for example, a portion of the first carrier layer 11 constituting the clad plate material 2S shown in FIG. 4 or the first carrier layer constituting the clad plate material 3S shown in FIG. 5 ( 11) consists of parts. The second carrier portion 12M is, for example, a portion of the second carrier layer 12 constituting the clad plate material 2S shown in Fig. 4 or the second carrier layer constituting the clad plate material 3S shown in Fig. 5 ( 12) consists of parts. Further, the configurations of the first carrier portion 11M and the second carrier portion 12M are not limited to the above. For example, the 1st carrier part 11M is comprised from the 2nd carrier layer 12 part of the clad plate material 2S shown in FIG. 4, and the 2nd carrier part 12M is a clad plate material 2S shown in FIG. ), it is possible to construct from the first carrier layer 11 part. In addition, the 1st carrier part 11M is comprised from the 2nd carrier layer 12 part of the clad plate material 3S shown in FIG. 5, and the 2nd carrier part 12M of the cladding plate material 3S shown in FIG. It is possible to construct from a portion of the first carrier layer 11.

The metal mask 3M is thin, and its thickness T _3M is 20 μm or less (preferably 15 μm or less). The metal mask 3M thinned in this way has a high-definition mask pattern with high dimensional accuracy of the mask pattern such as the etching hole 3f formed by etching. The thickness T _3M of the metal mask 3M is, for example, the total thickness of the substrate layer 10, the first carrier layer 11, and the second carrier layer 12 constituting the clad plate 2S. Alternatively, it may be equal to the total thickness of the base layer 10, the first carrier layer 11, and the second carrier layer 12 constituting the clad plate 3S (T _3M = t0 + t1 + t2), It may be thinned to equal or less by half etching or the like (T _3M < t0 + t1 + t2). The thickness (T _Y1 ) of the first carrier portion 11M is, for example, the thickness of the first carrier layer 11 constituting the clad plate material 2S or the first carrier layer 11 constituting the clad plate material 3S. ) May be equal to the thickness of (T _Y1 = t1), or may be thinned to equal or less by half etching (T _Y1 <t1). The thickness (T _Y2 ) of the second carrier portion 12M is, for example, the thickness of the second carrier layer 12 constituting the clad plate material 2S or the second carrier layer 12 constituting the clad plate material 3S. ) May be equal to the thickness of (T _Y2 =t2), or may be made thinner to equal or less by half etching (T _Y2 <t2).

<Modified example of 3rd product example>

Fig. 11 shows a modified example of the third product example of the metal mask according to the present invention. 11 is a view seen from a cross section of the metal mask 3Ma cut in the thickness direction (Z direction). The metal mask 3Ma has, for example, an etching hole 3f as a mask pattern. When viewed from a cross section cut in the thickness direction, the metal mask 3Ma has a three-layer structure. The main body of the metal mask 3Ma consists of a base portion 10M, a first carrier portion 11M and a second carrier portion 12M. The first carrier portion 11M has a frame portion 11f for reinforcing the metal mask 3Ma. The substrate portion 10M is made of, for example, a portion of the substrate layer 10 constituting the clad plate material 2S shown in FIG. 4 or a portion of the substrate layer 10 constituting the clad plate material 3S shown in FIG. 5. The first carrier portion 11M and the frame portion 11f constitute, for example, a portion of the first carrier layer 11 constituting the clad plate 2S shown in FIG. 4 or the clad plate 3S shown in FIG. 5 It consists of a portion of the first carrier layer (11). The second carrier portion 12M is, for example, a portion of the second carrier layer 12 constituting the clad plate material 2S shown in Fig. 4 or the second carrier layer constituting the clad plate material 3S shown in Fig. 5 ( 12) consists of parts. The frame portion 11f can be formed when forming the first carrier portion 11M. The frame portion 11f is arranged annularly at the marginal portion of the base layer 10. The metal mask 3Ma having the frame portion 11 is a metal mask that is easy to handle because the mechanical strength is improved when the thickness of the main body of the metal mask is substantially equal to that of the metal mask 3M shown in FIG. 10. Becomes. The frame portion 11f is arranged in an annular shape at the marginal portion of the first carrier portion 11M, but does not need to be arranged in an annular shape at the marginal portion of the first carrier portion 11M, and is opposite to the first carrier portion 11M. It may be disposed on the second carrier portion 12M on the surface side. In addition, the configuration of the frame portion 11f is not limited to the above. For example, the frame portion 11f is either the second carrier layer 12 portion of the clad plate 2S shown in FIG. 4 or the second carrier layer 12 portion of the clad plate 3S shown in FIG. It is also possible to configure.

The metal mask 3Ma is thin, and its thickness T _3Ma is 20 μm or less (preferably 15 μm or less). The metal mask 3Ma thinned in this way has a high-definition mask pattern with high dimensional accuracy of the mask pattern such as the etching hole 3f formed by etching. The thickness T _3Ma of the metal mask 3Ma is, for example, the _total thickness of the base layer 10, the first carrier layer 11, and the second carrier layer 12 constituting the clad plate 2S. Alternatively, it may be equal to the total thickness of the base layer 10, the first carrier layer 11, and the second carrier layer 12 constituting the clad plate 3S (T _3Ma = t0 + t1 + t2), It may be made to be equal to or less thin by half etching or the like (T _3Ma < t0 + t1 + t2). The thickness T _Y1 of the first carrier portion 11M is, for example, the thickness of the first carrier 11 constituting the clad plate 2S or the first carrier layer 11 constituting the clad plate 3S It may be equal to the thickness of (T _Y1 = t1), or it may be made thin to be equal to or less than that by half etching (T _Y1 <t1). The thickness (T _Y2 ) of the second carrier portion 12M is, for example, the thickness of the second carrier layer 12 constituting the clad plate material 2S or the second carrier layer 12 constituting the clad plate material 3S. ) May be equal to the thickness of (T _Y2 =t2), or may be made thinner to equal or less by half etching (T _Y2 <t2). The thickness T _X of the frame part 11f is, for example, from the thickness of the first carrier layer 11 constituting the clad plate 2S or the first carrier layer 11 constituting the clad plate 3S It may be equal to the thickness obtained by subtracting the thickness of the first carrier portion 11M from the thickness of (T _X = t1-T _Y1 ), or may be made thinner to equal or less by half etching or the like (T _X <t1-T _Y1 ). Further, the total thickness (T _3Ma + T _X ) of the above-described thickness (T _3Ma ) and the thickness (T _X ) may be regarded as the thickness of the metal mask 3Ma.

Hereinafter, a method of manufacturing an embodiment (product example) in which the metal mask according to the present invention is embodied by using the cladding plate for a metal mask according to the present invention (Example 1, Example 2, and Example 3) Is demonstrated based on FIGS. 12-20. In addition, based on Figs. 12 to 16, an example of a method of manufacturing a metal mask using the clad plate material 1S (first embodiment) shown in Fig. 3 will be described, and shown in Fig. 4 based on Figs. An example of a method of manufacturing a metal mask using the clad plate material 2S (second embodiment) and the clad plate material 3S (third embodiment) shown in FIG. 5 will be described.

<Product Example 1> <Product Example 2>

According to the manufacturing method of the metal mask shown in FIGS. 12 and 13, the metal mask 1M shown in FIG. 6 (the first product example) and the metal mask 2M shown in FIG. 8 (the second product example) can be manufactured. .

In Fig. 12, step (a) is a material preparation step. In this material preparation step, for example, a clad plate 1S shown in FIG. 3 is prepared. The clad plate material 1S (thickness T _1S ) includes a base layer 10 (thickness t0) and a first carrier layer 11 (thickness t1). The thickness of the base layer 10 is 1 μm or more and 20 μm or less (preferably 5 μm or more and 15 μm or less). The base layer 10 and the first carrier layer 11 are pressure-bonded. The base layer 10 is made of, for example, an Fe-based alloy A containing about 32% by mass of Ni and about 5.5% by mass of Co. The first carrier layer 11 is made of, for example, an Fe-based alloy B containing about 36% by mass of Ni. The base layer 10 made of the Fe-based alloy A and the first carrier layer 11 made of the Fe-based alloy B can be etched with a homogeneous etching solution (for example, a ferric chloride solution having a concentration of 40% by mass). . Further, the substrate layer 10 made of Fe-based alloy A is more resistant to the etching solution than the first carrier layer 11 made of Fe-based alloy B.

In Fig. 12, step (b) is a coating step. In this coating process, a protective film 13 is formed on the surface 10a of the substrate layer 10 and a protective film 14 is formed on the surface 11a of the first carrier layer 11 to form a predetermined etching pattern. do.

In Fig. 12, step (c) is an etching step. In this etching step, the clad plate material 1S is etched using an etching solution suitable for both the Fe-based alloy A constituting the base layer 10 and the Fe-based alloy B constituting the first carrier layer 11. As the etching solution, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used, for example. By this etching, the surface 10a of the base layer 10 without the protective film 13 and the surface 11a of the first carrier layer 11 without the protective film 14 are simultaneously etched, for example, etching The hole 10b and the etching hole 11b are formed approximately simultaneously. At this time, the substrate layer 10 made of the Fe-based alloy A is more resistant to the etching solution than the first carrier layer 11 made of the Fe-based alloy B, so that the first carrier layer ( The etching rate on the 11) side increases. Therefore, the corrosion loss on the first carrier layer 11 side is greater than that on the substrate layer 10 side, and the etching hole 11b on the first carrier layer 11 side is compared to the etching hole 10b on the substrate layer 10 side. The size (depth from the surface, diameter of the opening to the surface, volume in the hole, etc.) can be increased. In addition, adjustment of the size of the etching hole 10b and the etching hole 11b can be performed by appropriately selecting the thickness and material of the base layer 10 and the first carrier layer 11.

In Fig. 12, step (d) is a finishing step. In this finishing step, the protective film 13 and the protective film 14 are removed from the clad plate material 1S, and the entire surface is cleaned. Accordingly, a metal mask can be manufactured. This metal mask is constituted by a substrate portion 10M made of Fe-based alloy A and a carrier portion 11M made of Fe-based alloy B. This metal mask is, for example, a metal mask 2M as shown in Fig. 8, for example, a two-layer metal mask 2M (2nd product) having a thickness T _2M having a mask pattern 2f. Yes).

Next, a method of manufacturing a metal mask using the manufacturing process shown in FIG. 13 will be described. The manufacturing process shown in FIG. 13 is a process leading from the process (a) shown in FIG. 12 to the process (c). By following the process (a) shown in FIG. 12 to the process (c), and passing through the process (c1) and process (d1) shown in FIG. 13, for example, a metal mask 1M as shown in FIG. 6 (the first Product example) can be manufactured.

In Fig. 13, the step (c1) is a half etching step. In this half-etching process, half-etching is performed after the protective film 13 is removed from the clad plate material 1S. Half-etching is performed from the surface 10a side (Z2 side) of the base layer 10 to the first carrier layer 11 side (Z1 side) using an etching solution suitable for the Fe-based alloy A constituting the base layer 10. It is done approximately uniformly toward. As the etching solution, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used, for example. Almost all of the base layer 10 is removed by this half-etching. It is also possible to perform half-etching toward the Z1 side with respect to the first carrier layer 11 after the substrate layer 10 has been removed by adjusting the half-etching conditions. Accordingly, it is possible to reduce the thickness of the metal mask.

In Fig. 13, step (d1) is a finishing step. In this finishing step, the protective film 14 is removed from the clad plate material 1S, and the entire surface of the clad plate material 1S is cleaned, so that a metal mask can be manufactured. This metal mask is constituted by a carrier portion 11M made of an Fe-based alloy B. This metal mask is, for example, a metal mask 1M as shown in Fig. 6, for example, a metal mask _1M of a single layer structure having a thickness T _1M having a mask pattern 1f (first product example )to be.

<First modification example of first product example>

According to the method of manufacturing the metal mask shown in FIGS. 12 and 14 or 12 and 15, the metal mask 1Ma shown in FIG. 14 or 15 having a configuration similar to that of the metal mask shown in FIG. 7 (a modified example of the first product example) ) (The first variation of the first product example) can be manufactured.

The metal mask 1Ma shown in FIG. 14 or 15 (the first modification example of the first product example) is manufactured by the manufacturing process shown in FIG. 13 or 14 following the process (a) shown in FIG. 12 to the process (c). Can be. In addition, in the material preparation process corresponding to the process (a) shown in FIG. 12, for example, the cladding plate material 1S shown in FIG. 3 is prepared. The cladding plate 1S may be the same as in the case of the metal mask 1M described above. The coating process corresponding to the process (b) shown in FIG. 12 and the etching process corresponding to the process (c) may be performed in the same manner as in the case of the metal mask 1M described above.

A method of manufacturing a metal mask using the manufacturing process shown in FIG. 14 will be described. The manufacturing process shown in FIG. 14 is a process leading from the process (a) shown in FIG. 12 to the process (c). In Fig. 14, step (e) is a coating step. In this coating process, a protective film 15 is formed on the surface 11a of the first carrier layer 11 in order to form a frame portion 11f of a predetermined shape on the Z1 side (see step (h)), and an etching hole A protective film 16 is formed on (11b) (see Fig. 12), and a protective film 17 is formed on the surface 10a of the base layer 10 and the etching hole 10b.

In Fig. 14, step (f) is an etching step. In this etching step, the first carrier layer 11 is etched using an etching solution suitable for the Fe-based alloy B constituting the first carrier layer 11. As the etching solution, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used, for example. By this etching, the protective film 15 and the surface 11a of the first carrier layer 11 having no protective film 16 are etched to form an etching hole 11c, for example. The depth (etching amount) of the etching hole 11c can be adjusted by adjusting etching conditions or the like.

In Fig. 14, step (g) is a half etching step. In this half-etching process, first, the protective film 17 is removed from the base layer 10. Subsequently, a protective film 18 is formed on the surface 11a of the first carrier layer 11 including the etching hole 11b and the etching hole 11c, and the protective film 18 is formed in the etching hole 10b (see Fig. 12). 19) is formed. Thereafter, half etching is performed. The half-etching is performed substantially uniformly from the surface 10a side (Z2 side) of the base layer 10 toward the first carrier layer 11 side (Z1 side). Almost all of the base layer 10 is removed by this half-etching. It is also possible to perform half-etching toward the Z1 side with respect to the first carrier layer 11 after the substrate layer 10 has been removed by adjusting the half-etching conditions. Accordingly, it is possible to reduce the thickness of the metal mask.

In Fig. 14, step (h) is a finishing step. In this finishing step, the protective film 18 and the protective film 19 are removed from the clad plate material 1S, and the entire surface is cleaned. Accordingly, a metal mask can be manufactured. This metal mask is constituted by a carrier portion 11M made of an Fe-based alloy B, and a frame portion 11f is arranged annularly at a marginal portion on the Z1 side of the carrier portion 11M. This frame part 11f is made up of the first carrier layer 11 part. This metal mask has a configuration similar to that of the metal mask shown in FIG. 7, for example, and has a single-layered metal mask _1Ma having a thickness T _1Ma having a mask pattern 1fa (the first product example). This is the first modification).

Next, a method of manufacturing a metal mask using the manufacturing process shown in FIG. 15 will be described. The manufacturing process shown in FIG. 15 is a process leading from the process (a) shown in FIG. 12 to the process (c). In Fig. 15, step (e1) is a coating step. In this coating process, a protective film 15 is formed on the surface 11a of the first carrier layer 11 in order to form a frame portion 11f of a predetermined shape on the Z1 side (see step (h1)), and an etching hole A protective film 16 is formed in (11b) (see Fig. 12), and a protective film 19 is formed in the etching hole 10b (see Fig. 12). In addition, a protective film is not formed on the surface 10a of the base layer 10.

In Fig. 15, step (f1) is an etching and half etching step. In this etching and half-etching process, an etching solution suitable for both of the Fe-based alloy A constituting the base layer 10 and the Fe-based alloy B constituting the first carrier layer 11 is used to form the first carrier layer 11 side. The (Z1 side) and the base layer 10 side (Z2 side) are etched simultaneously. As the etching solution, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used, for example. By this etching, the protective film 15 and the surface 11a of the first carrier layer 11 having no protective film 16 are etched to form an etching hole 11c, for example. The depth (etching amount) of the etching hole 11c can be adjusted by adjusting etching conditions or the like. In addition, at the same time, the surface 10a of the base layer 10 without the protective film 19 is substantially uniformly half-etched toward the first carrier layer 11 side (Z1 side), so that approximately all of the base layer 10 is Is removed. It is also possible to perform half-etching toward the Z1 side with respect to the first carrier layer 11 after the substrate layer 10 has been removed by adjusting the half-etching conditions. Accordingly, it is possible to reduce the thickness of the metal mask.

In Fig. 15, step (h1) is a finishing step. In this finishing process, the protective film 15, the protective film 16, and the protective film 19 are removed from the clad plate material 1S, and the entire surface is cleaned. Accordingly, a metal mask can be manufactured. This metal mask is constituted by a carrier portion 11M made of an Fe-based alloy B, and a frame portion 11f is arranged annularly at a marginal portion on the Z1 side of the carrier portion 11M. This frame part 11f is made up of the first carrier layer 11 part. This metal mask has a configuration similar to that of the metal mask shown in FIG. 7, for example, and has a single-layered metal mask 1Ma having a thickness T1Ma having a mask pattern 1fa (the first product example). 1 modification).

<Second modification of the first product example>

According to the manufacturing method of the metal mask shown in FIGS. 12 and 16, the metal mask shown in FIG. 7 (a modified example of the first product example) has a configuration similar to that of the metal shown in FIG. 16 in which the frame portion 10f is disposed on the Z2 side. A mask 1Mb (a second modification of the first product example) can be manufactured.

The metal mask 1Mb shown in FIG. 16 (a second modified example of the first product example) can be manufactured by the manufacturing process shown in FIG. 16 following the process (a) shown in FIG. 12 to the process (c). In addition, in the material preparation process corresponding to the process (a) shown in FIG. 12, for example, the cladding plate material 1S shown in FIG. 3 is prepared. This clad plate material 1S may be the same as in the case of the metal mask 1M described above. The coating process corresponding to the process (b) shown in FIG. 12 and the etching process corresponding to the process (c) may be performed in the same manner as in the case of the metal mask 1M described above.

The manufacturing process shown in FIG. 16 is a process leading from the process (a) shown in FIG. 12 to the process (c). In Fig. 16, step (e2) is a coating step. In this coating step, a protective film 17 is formed on the surface 10a of the base layer 10 in order to form a frame portion 10f of a predetermined shape (refer to step (h2)) on the Z2 side, and the etching hole 10b ), and the protective film 20 is formed on the surface 11a of the first carrier layer 11 and the etching hole 11b (see Fig. 12).

In Fig. 16, step (f2) is an etching step. In this etching step, the base layer 10 is etched using an etching solution suitable for the Fe-based alloy A constituting the base layer 10. As the etching solution, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used, for example. By this etching, the surface 10a of the base layer 10 without the protective film 17 and the protective film 19 is etched to remove approximately all of the base layer 10, for example, the etching hole 10c. Is formed. The depth (etching amount) of the etching hole 10c can be adjusted by adjusting etching conditions or the like. It is also possible to perform etching toward the Z1 side with respect to the first carrier layer 11 after the substrate layer 10 has been removed by adjusting the etching conditions. Accordingly, it is possible to reduce the thickness of the metal mask.

In Fig. 16, step (h2) is a finishing step. In this finishing step, the protective film 17, the protective film 19, and the protective film 20 are removed to clean the entire surface. Accordingly, a metal mask can be manufactured. This metal mask is constituted by a carrier portion 11M made of an Fe-based alloy B, and a frame portion 10f is arranged annularly at a marginal portion on the Z2 side of the carrier portion 11M. This frame part 10f is made of a base layer 10 part. This metal mask has a configuration similar to that of the metal mask shown in Fig. 7, for example, and the frame portion 10f is disposed on the Z2 side. This metal mask is, for example, a metal mask 1Mb (a second modification of the first product example) having a thickness T _1Mb having a mask pattern 1f. The main body of this metal mask 1Mb is a single layer structure.

<3rd product example>

According to the manufacturing method of the metal mask shown in FIG. 17, the metal mask 3M (third product example) shown in FIG. 10 can be manufactured.

In Fig. 17, step (i) is a material preparation step. In this material preparation step, for example, the clad plate material 2S shown in FIG. 4 or the clad plate material 3S shown in FIG. 5 is prepared. In FIG. 16, a cladding plate 2S shown in FIG. 4 is represented as a representative. The cladding plate material 2S (thickness T _2S ) is the base layer 10 (thickness t0), the first carrier layer 11 (thickness t1), and the second carrier layer 12 (thickness (t2)). The thickness of the base layer 10 is 1 μm or more and 20 μm or less (preferably 5 μm or more and 15 μm or less). The base layer 10 and the first carrier layer 11 are pressure-bonded. The base layer 10 and the second carrier layer 12 are pressure-bonded. The base layer 10 is made of, for example, an Fe-based alloy A containing about 32% by mass of Ni and about 5.5% by mass of Co. The first carrier layer 11 is made of, for example, an Fe-based alloy B containing about 36% by mass of Ni. The second carrier layer 12 is made of an Fe-based alloy C, can be etched with an etching solution identical to that of the Fe-based alloy B, and is more resistant to corrosion than the Fe-based alloy B with respect to the etching solution. The substrate layer 10 made of the Fe-based alloy A, the first carrier layer 11 made of the Fe-based alloy B, and the second carrier layer 12 made of the Fe-based alloy C are all of the same etching solution (for example, , 40% by mass concentration of ferric chloride, etc.). In addition, the substrate layer 10 made of Fe-based alloy A is more resistant to corrosion than the first carrier layer 11 made of Fe-based alloy B with respect to the etching solution, and is more resistant to the second carrier layer 12 made of Fe-based alloy C. It is high resistance.

In Fig. 17, step (j) is a coating step. In this coating process, in order to form a predetermined etching pattern, a protective film 13 is formed on the surface 11a of the first carrier layer 11, and a protective film 14 is formed on the surface 12a of the second carrier layer 12. To form.

In Fig. 17, step (k) is an etching step. In this etching step, the clad plate 2S is etched using an etching solution suitable for both the Fe-based alloy B constituting the first carrier layer 11 and the Fe-based alloy C constituting the second carrier layer 12. As the etching solution, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used, for example. By this etching, the surface 11a of the first carrier layer 11 without the protective film 13 and the surface 12a of the second carrier layer 12 without the protective film 14 are etched at the same time. For example, the etching hole 11b and the etching hole 12b are formed substantially simultaneously. At this time, since the second carrier layer 12 composed of Fe-based alloy C is higher corrosion resistance to the etching solution than the first carrier layer 11 composed of Fe-based alloy B, the etching rate of the second carrier layer 12 side The etching rate on the first carrier layer 11 side increases more. Therefore, the corrosion loss on the first carrier layer 11 side is greater than on the base layer 10 side, and the formation of the etching holes from the Z1 side to the Z2 side proceeds more rapidly. As a result, since the etching of the base layer 10 proceeds from the Z1 side, the etching of the first carrier layer 11 side (Z1 side) than the etching hole 12b of the second carrier layer 12 side (Z2 side) The size of the hole 11b (the depth from the surface, the diameter of the opening to the surface, the volume in the hole, etc.) can be increased. In addition, adjustment of the size of the etching hole 11b and the etching hole 12b can be performed by appropriately selecting the thickness and material of the first carrier layer 11 and the second carrier layer 12.

In Fig. 17, step (m) is a finishing step. In this finishing process, the protective film 13 and the protective film 14 are removed from the cladding plate 2S, and the entire surface is cleaned. Accordingly, a metal mask can be manufactured. This metal mask is constituted by a substrate portion 10M made of an Fe-based alloy A, a first carrier portion 11M made of an Fe-based alloy B, and a second carrier portion 12M made of an Fe-based alloy C. This metal mask is, for example, a metal mask 3M as shown in Fig. 10, for example, a three-layer metal mask 3M (third product) having a thickness T _3M having a mask pattern 3f. Yes).

<Modified example of 3rd product example>

According to the manufacturing process shown in FIGS. 17 and 18, the metal mask 3Ma shown in FIG. 11 (a modified example of the third product example) can be manufactured.

The metal mask 3Ma shown in FIG. 11 (a modified example of the third product example) can be manufactured by the manufacturing process shown in FIG. 18 from the process (i) shown in FIG. 17 to the process (k). In addition, in the material preparation process corresponding to the process (i) shown in FIG. 17, for example, the clad plate material 3S shown in FIG. 5 is prepared. The cladding plate material 3S (thickness (T _3S )) includes the base layer 10 (thickness (t0)), the first carrier layer 11 (thickness (t1)), and the second carrier layer 12 (thickness). (t2), t1>t2). The thickness of the base layer 10 is 1 μm or more and 20 μm or less (preferably 5 μm or more and 15 μm or less). The thickness t1 of the first carrier layer 11 is the thickness t2 of the second carrier layer 12 to form the frame portion 11f (see Fig. 18) using the portion of the first carrier layer 11 It is thicker (see Fig. 5, t1>t2). The base layer 10 and the first carrier layer 11 are pressure-bonded. The base layer 10 and the second carrier layer 12 are pressure-bonded. The base layer 10 is made of, for example, an Fe-based alloy A containing about 32% by mass of Ni and about 5.5% by mass of Co. The first carrier layer 11 is made of, for example, an Fe-based alloy B containing about 36% by mass of Ni. The second carrier layer 12 is made of an Fe-based alloy C, can be etched with an etching solution identical to that of the Fe-based alloy B, and is more resistant to corrosion than the Fe-based alloy B with respect to the etching solution. The substrate layer 10 made of the Fe-based alloy A, the first carrier layer 11 made of the Fe-based alloy B, and the second carrier layer 12 made of the Fe-based alloy C are all of the same etching solution (for example, , 40% by mass concentration of ferric chloride, etc.). In addition, the substrate layer 10 made of Fe-based alloy A is more resistant to corrosion than the first carrier layer 11 made of Fe-based alloy B with respect to the etching solution, and is more resistant to the second carrier layer 12 made of Fe-based alloy C. It is high resistance. The coating process corresponding to the process (j) shown in FIG. 17 and the etching process corresponding to the process (k) may be performed in the same manner as in the case of the metal mask 3M described above.

The manufacturing process shown in FIG. 18 is a process leading from the process (i) shown in FIG. 17 to the process (k). In Fig. 18, step (n) is a coating step. In this coating process, a protective film 15 is formed on the surface 11a of the first carrier layer 11 in order to form a frame portion 11f of a predetermined shape on the Z1 side (see step (q)), and an etching hole A protective film 16 is formed on (11b) (see Fig. 17), and a protective film 17 is formed on the surface 12a of the second carrier layer 12 and the etching hole 12b (see Fig. 17).

In Fig. 18, step (p) is an etching step. In this etching step, the first carrier layer 11 is etched using an etching solution suitable for the Fe-based alloy B constituting the first carrier layer 11. As the etching solution, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used, for example. By this etching, the surface 11a of the first carrier layer 11 having no protective film 15 is etched, and, for example, an etching hole 11c is formed. Further, it is possible to adjust the depth of the etching hole 11c by adjusting conditions such as the etching time.

In Fig. 18, step (q) is a finishing step. In this finishing step, the protective film 15, the protective film 16, and the protective film 17 are removed from the clad plate material 3S, and the entire surface is cleaned. Accordingly, a metal mask can be manufactured. This metal mask is constituted by a substrate portion 10M made of Fe-based alloy A, a first carrier portion 11M made of Fe-based alloy B, and a second carrier portion 12M made of Fe-based alloy C, A frame portion 11f is arranged in an annular shape at a peripheral portion on the Z1 side of the first carrier portion 11M. This frame part 11f is made up of the first carrier layer 11 part. This metal mask is, for example, a metal mask 3Ma as shown in Fig. 11, for example, a metal mask 3Ma having a three-layer structure having a thickness T3Ma having a mask pattern 3f (3rd product example )to be.

<Modification of the second product example>

According to the manufacturing process shown in FIGS. 17 and 19, the metal mask 2Ma shown in FIG. 9 (a modified example of the second product example) can be manufactured.

The metal mask 2Ma shown in FIG. 9 (a modified example of the second product example) can be manufactured by the manufacturing process shown in FIG. 19 from the process (i) shown in FIG. 17 to the process (k). In the material preparation step corresponding to the step (i) shown in FIG. 17, for example, the clad plate 2S shown in FIG. 4 or the clad plate 3S shown in FIG. 5 is prepared. In FIG. 19, the cladding plate 2S shown in FIG. 4 is represented as a representative. The cladding plate 2S may be the same as in the case of the metal mask 3M described above. The thickness t1 of the first carrier layer 11 is the thickness t2 of the second carrier layer 12 because the frame portion 11f (see Fig. 19) is formed by etching the portion of the first carrier layer 11 It may be approximately equal to (see Fig. 4, t1=t2). The degree of coverage corresponding to the step (j) shown in FIG. 17 and the etching step corresponding to the step (k) may be performed in the same manner as in the case of the metal mask 3M described above.

The manufacturing process shown in FIG. 19 is a process leading from the process (i) shown in FIG. 17 to the process (k). In Fig. 19, step (n1) is a coating step. In this coating process, a protective film 15 is formed on the surface 11a of the first carrier layer 11 in order to form a frame portion 11f of a predetermined shape on the Z1 side (see step (q1)), and an etching hole A protective film 16 is formed on (11b) (see Fig. 17), and a protective film 17 is formed on the surface 12a of the second carrier layer 12 and the etching hole 12b (see Fig. 17).

In Fig. 19, the step (p1) is an etching step. In this etching step, the first carrier layer 11 is etched using an etching solution suitable for the Fe-based alloy B constituting the first carrier layer 11. As the etching solution, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used, for example. By this etching, the surface 11a of the first carrier layer 11 that does not have the protective film 15 is etched to remove approximately all of the first carrier layer 11, for example, an etching hole 11c is formed. do. Further, it is possible to adjust the depth of the etching hole 11c by adjusting conditions such as the etching time. It is also possible to perform etching toward the Z2 side with respect to the base layer 10 after the first carrier layer 11 has been removed by adjusting the etching conditions. Accordingly, it is possible to reduce the thickness of the metal mask.

In Fig. 19, step (q1) is a finishing step. In this finishing process, the protective film 15, the protective film 16, and the protective film 17 are removed from the cladding plate 2S, and the entire surface is cleaned. Accordingly, a metal mask can be manufactured. The main body of this metal mask is constituted by a substrate portion 10M made of Fe-based alloy A and a second carrier portion 12M made of Fe-based alloy C. In this metal mask, a frame portion 11f is arranged annularly at a marginal portion on the Z1 side of the first carrier portion 11M made of Fe-based alloy B. This frame part 11f is made up of the first carrier layer 11 part. This metal mask is, for example, a metal mask 2Ma as shown in Fig. 9, for example, a metal mask 2Ma having a thickness T _2Ma having a mask pattern 2f (modified example of the second product example) to be. The main body of this metal mask 2Ma is a two-layer structure.

<3rd modified example of 1st product example>

According to the manufacturing process shown in FIGS. 17 and 20, the metal mask 1Ma shown in FIG. 7 (a modified example of the first product example) can be manufactured. In addition, the metal mask 1Ma shown in Fig. 20 obtained in this manufacturing process is referred to as a third modified example of the first product example for convenience.

The metal mask 1Ma shown in FIG. 7 (a third modified example of the first product example) can be manufactured by the manufacturing process shown in FIG. 20 from the process (i) shown in FIG. 17 to the process (k). In the material preparation step corresponding to the step (i) shown in Fig. 17, for example, a similar clad plate is prepared in the clad plate 2S shown in Fig. 4 or the clad plate 3S shown in Fig. 5. This clad plate material 3S may be the same as the case of the metal mask 3Ma (see Fig. 18) described above, but may not be the same as the case of the metal mask 3Ma (see Fig. 18) described above. The clad plate material 3S may have, for example, the thickness t2 of the second carrier layer 12 larger than the thickness t1 of the first carrier layer 11 (t1 <t2). In FIG. 20, a clad plate material (hereinafter referred to as a clad plate material 3S) having a similar three-layer structure is held in the clad plate material 3S shown in FIG. 5 as a representative. The base layer 10 is made of the Fe-based alloy A, for example. The first carrier layer 11 is more easily etched with an etching solution of the same quality than that of the Fe-based alloy A, and is made of, for example, the Fe-based alloy C. The second carrier layer 12 is more easily etched with an etching solution of the same quality than that of the Fe-based alloy C, and is made of, for example, the Fe-based alloy B. Therefore, the base layer 10, the first carrier layer 11, and the second carrier layer 12 can be etched at the same time. In addition, with respect to the etching solution, the base layer 10 is more corrosion resistant than the first carrier layer 11 and the second carrier layer 12, and the first carrier layer 11 is more corrosion resistant than the second carrier layer 12. to be. The coating process corresponding to the process (j) shown in FIG. 17 may be performed similarly to the case of the metal mask 3M described above. In addition, in the etching process corresponding to the step (k), the first carrier layer 11 has higher corrosion resistance than the second carrier layer 12, so that the second carrier layer 12 is compared with the etching rate of the first carrier layer 11. ), the etching rate increases. Therefore, taking into account that the etching amount (depth) from the second carrier layer 12 side (Z2 side) toward the Z1 side becomes larger than the etching amount (depth) from the first carrier layer 11 side (Z1 side) to the Z2 side. Good to adjust.

The manufacturing process shown in FIG. 20 is a process leading from the process (i) shown in FIG. 17 to the process (k). In Fig. 20, step (n2) is a coating step. In this coating process, a protective film 15 is formed on the surface 11a of the first carrier layer 11 in order to form a frame portion 11f of a predetermined shape on the Z1 side (see step (q2)), and an etching hole (11b) A protective film 16 is formed in (see Fig. 17), and a protective film 19 is formed in the etching hole 12b (see Fig. 17). Further, no protective film is formed on the surface 11a of the second carrier layer 11.

In Fig. 20, the step (p2) is an etching and half etching step. In this etching and half-etching process, an etching solution suitable for the Fe-based alloy C constituting the first carrier layer 11 and the Fe-based alloy C constituting the second carrier layer 12 is used to form the first carrier layer 11 and The second carrier layer 12 is etched simultaneously. As the etching solution, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used, for example. By this etching, the surface 11a of the first carrier layer 11 that does not have the protective film 15 is etched to remove approximately all of the first carrier layer 11, for example, an etching hole 11c is formed. do. In addition, at the same time, the surface 12a of the second carrier layer 12 without the protective film 19 is substantially uniformly half-etched toward the base layer 10 side (Z1 side), so that the second carrier layer 11 is approximately All is removed. In this case, the etching rate of the second carrier layer 12 increases as compared to the etching rate of the first carrier layer 11 which is more corrosion resistant than the second carrier layer 12. Therefore, the etching amount (depth) from the second carrier layer 12 side (Z2 side) to the Z1 side is larger than the etching amount (depth) from the first carrier layer 11 side (Z1 side) to the Z2 side. Therefore, considering the difference in thickness and corrosion resistance between the first carrier layer 11 and the second carrier layer 12, it is possible to adjust to remove the second carrier layer 12 approximately simultaneously with the formation of the etching hole 11C. Do. Further, it is possible to adjust the depth of the etching hole 11c by adjusting the etching conditions. It is also possible to perform half-etching toward the Z1 side with respect to the base layer 10 after the second carrier layer 12 has been removed by adjusting the etching conditions. Accordingly, it is possible to reduce the thickness of the metal mask.

In Fig. 20, step (q2) is a finishing step. In this finishing step, the protective film 15, the protective film 16, and the protective film 19 are removed from the cladding plate 2S, and the entire surface is cleaned. Accordingly, a metal mask can be manufactured. The main body of this metal mask is constituted by a substrate portion 10M made of an Fe-based alloy A. In this metal mask, a frame portion 11f is arranged in an annular shape at a marginal portion on the Z1 side of the base portion 10M. This frame part 11f is made up of the first carrier layer 11 part. This metal mask is, for example, a metal mask 1Ma as shown in FIG. 7, for example, a metal mask 1Ma having a thickness T _1Ma having a mask pattern 1f (a third modification of the first product example). Yes). The main body of this metal mask 1Ma is a single layer structure. A clad plate for a metal mask such as the above-described clad plate 3S is sufficiently easy to handle, and there is a high possibility that the metal mask can be thinned. In addition, according to the method of manufacturing a metal mask as shown in Figs. 17 and 20 using the above-described clad plate material 3S, it is possible to manufacture a sufficiently thin metal mask by sufficiently easy handling, and sufficient productivity improvement is expected.

<Figure 1, Figure 2>
100, 200: metal mask 100a: metal plate
100b: first surface 100c: second surface
100d, 100e, 201b, 202b: etching hole 100f: mask pattern
101-104: protective layer 200: metal mask
200a: clad plate 200f: mask pattern
201: first layer 201a, 202a: surface
202: second layer 203, 204: protective film
<Figure 3~Figure 5>
1S: clad plate material (first embodiment) 2S: clad plate material (second embodiment)
3S: clad plate (third embodiment) 10: base layer
11: first carrier layer 12: second carrier layer
<Figs. 6 to 11>
1M: Metal mask (Product Example 1)
1Ma: Metal mask (modified example of the first product example)
1f, 2f, 3f: mask pattern 2M: metal mask (2nd product example)
2Ma: Metal mask (modified example of the second product example)
3M: Metal mask (3rd product example)
3Ma: Metal mask (modified example of the third product example)
10M: base portion 11M: carrier portion (first carrier portion)
11f: frame portion 12M: carrier portion (second carrier portion)
<Fig. 12, Fig. 13>
1M: metal mask 1S: clad plate
1f, 2f: mask pattern 2M: metal mask
10: base layer 10M: base portion
10a, 11a: surface 10b, 11b: etching hole
11: first carrier layer 11M: carrier portion
13, 14: protective film
<Figs. 14 to 16>
1Ma, 1Mb: metal mask 1f, 1fa: mask pattern
10: base layer 10a, 11a: surface
10c, 11c: etching holes 10f, 11f: frame portion
11: first carrier layer 11M: carrier portion
15-20: protective film
<Figs. 17 to 20>
1Ma, 2Ma, 3M, 3Ma: metal mask 1f, 2f, 3f: mask pattern
2S, 3S: clad plate 10: base layer
10M: base portion 11: first carrier layer
11M: first carrier portion 11a, 12a: surface
11b, 12b: etching hole 12: second carrier layer
12M: second carrier parts 13 to 17, 19: protective film

Claims (7)

When viewed from a cross section cut in the thickness direction, a substrate layer made of an Fe-based alloy containing at least one of Ni and Co in a range of 30% by mass or more and 50% by mass or less, and one side of the substrate layer are pressed into Having a first carrier layer,
The base layer and the first carrier layer can be etched with a homogeneous etching solution, and the base layer is a clad plate material for a metal mask having higher corrosion resistance to the etching solution than the first carrier layer. The method of claim 1,
When etching is performed using a homogeneous etchant under the same environment, the corrosion loss of the substrate layer is M _b , and the corrosion loss of the first carrier layer is M _C 1,
The base layer and the first carrier layer are clad plates for metal masks satisfying the relationship of M _b /M _c1 ≤ 0.9. When viewed from a cross section cut in the thickness direction, a substrate layer made of an Fe-based alloy containing at least one of Ni and Co in a range of 30% by mass or more and 50% by mass or less, and one side of the substrate layer are pressed into And a second carrier layer press-contacted to the other side of the substrate layer, and
The base layer, the first carrier layer, and the second carrier layer can be etched with a same etching solution, and the base layer is a metal that is more resistant to the etching solution than the first carrier layer and the second carrier layer. Clad plate for masks. The method of claim 3,
Etching is performed using a homogeneous etching solution under the same environment, the corrosion loss of the base layer is referred to as M _b , the corrosion loss of the first carrier layer is referred to as M _{C 1} , and the corrosion loss of the second carrier layer is M _{C 2} When I say,
The base layer, the first carrier layer, and the second carrier layer satisfy the relationship of M _b /M _c1 ≤0.9 and M _b /M _c2 ≤0.9. As a metal mask formed using the cladding plate for metal masks according to any one of claims 1 to 4,
A metal mask made of the Fe-based alloy constituting the base layer. As a metal mask formed using the cladding plate for metal masks according to any one of claims 1 to 4,
A metal mask comprising a first metal layer made of the Fe-based alloy constituting the base layer and a second metal layer made of a metal constituting the first carrier layer, and the first metal layer and the second metal layer are bonded to each other . As a metal mask formed using the cladding plate for metal masks according to claim 3 or 4,
A first metal layer made of the Fe-based alloy constituting the base layer, a second metal layer made of a metal constituting the first carrier layer, and a third metal layer made of a metal constituting the second carrier layer, And a metal mask formed by bonding the second metal layer, the first metal layer, and the third metal layer in this order.

Images