KR20200048990A - Memory cell unit, switching resistance memory device and neuromorphic device including the same - Google Patents

Abstract

Disclosed are a memory cell unit, a switching resistance memory element, and a neuromorphic element including the same. The memory cell unit includes both ends electrodes and a liquid crystal cell positioned between both ends electrodes, changing a long axis direction in accordance with a voltage applied to both ends electrodes, and generating different resistances between both ends electrodes in accordance with the change of the long axis direction. The memory cell unit has multi-level characteristics.

Description

MEMORY CELL UNIT, SWITCHING RESISTANCE MEMORY DEVICE AND NEUROMORPHIC DEVICE INCLUDING THE SAME

The present invention relates to a memory cell unit, a switching resistance memory element, and a brain nerve mimicking element including the same, and more particularly, to a memory cell unit using a liquid crystal cell, a switching resistance memory element, and a brainsing mimicry element including the same.

The modern information and communication society needs a semiconductor device having the ability to process more information more rapidly in order to exchange two-way communication using a combination of text, voice and video. However, among the current storage devices, the growth of volatile memory has reached its limit and is accelerating the development of next-generation memory to replace it. There is a greater need than ever for the development of non-volatile memory devices capable of ultra-high integration necessary for the storage of high-capacity and economic information.

Resistive random access memory device (ReRAM) among nonvolatile memory devices is a nonvolatile memory device that changes the electrical resistance of a material by applying an external voltage and uses the difference in resistance as an on / off. It is one of the next generation non-volatile memory device candidates to replace the current memory device market centered on DRAM and flash memory because of its simple structure compared to volatile memory.

Resistive change memory devices can be implemented with a variety of materials and structures, but widely viewed are three types of binary oxides, perovskite oxide containing manganese, and perovskite oxide doped with a small amount of metal. Can be divided into. Among them, the development of devices using oxide-based materials is expected to dramatically increase the density of non-volatile memories, open the market for new memory devices, and dramatically improve the performance of various types of electronic devices.

However, the oxide series applied to the resistance change memory device is a thin film formed by PVD, CVD and other sputtering methods, and the entire process is complicated and requires high vacuum conditions, resulting in high production cost and difficulty in securing reproducibility. Anara ultra-high integration is not easy.

In addition, the conventional oxide-based resistance change memory device has difficulty in realizing the linearity of the output resistance to the input voltage, and is a circuit or chip having an artificial intelligence function, a neural network. It cannot be applied to a working circuit or chip.

One aspect of the present invention provides a memory cell unit having multi-level characteristics of multiple resistances by injecting a liquid crystal cell having a relatively low surface alignment force between both ends of the electrode by changing the orientation of the liquid crystal cell.

Another aspect of the present invention provides a switching resistance memory device including the memory cell unit.

Another aspect of the present invention provides a brain neuron simulation device to which the switching resistance memory device is applied.

The memory cell unit for solving the above problems is located between both ends of the electrode and the both ends of the electrode, and a long axis direction is changed according to a voltage applied to both ends of the electrode, and different resistances are applied between the both ends electrodes according to the change in the long axis direction. It includes a liquid crystal cell to generate.

On the other hand, in the liquid crystal cell, when a voltage is applied to both ends of the electrode, an alignment layer having an alignment force that enables movement of the surface liquid crystal may be formed.

Further, in the liquid crystal cell, an alignment layer having an alignment force of 0 to 10 ^-8 J / m ² may be formed.

In addition, the liquid crystal cell may be formed of an alignment film composed of any one of PMMA, PVA and Polystyrene.

In addition, the liquid crystal cell may be formed of an alignment layer made of a material having a glass transition temperature below the driving environment temperature.

In addition, the liquid crystal cell, the positive liquid crystal rotating in the direction of the electric field by the voltage applied to the both ends of the electrode, the negative liquid crystal rotating in the direction opposite to the direction of the electric field, and the frequency of the voltage applied to the both ends of the electrode Accordingly, it may be implemented with any of frequency-dependent dielectric anisotropy liquid crystals having positive dielectric anisotropy or negative dielectric anisotropy.

In addition, the switching resistance memory device of the present invention constitutes a lower substrate, both ends formed on at least one of the upper substrate and the lower substrate, and a memory cell formed by the both ends, and the voltage applied to the both ends of the electrode. The long axis direction is changed accordingly, and the liquid crystal cell includes different resistances generated in the memory cell according to the long axis direction.

Meanwhile, when the first voltage is applied to the both ends of the liquid crystal cell, the long axis direction is rotated according to the intensity and direction of the electric field by the first voltage in the memory cell to maintain a state in which the long axis direction is rotated. When a first resistor is generated and a second voltage higher than the first voltage is applied to the both ends of the electrode, a state in which the long axis direction is rotated according to the strength and direction of the electric field by the second voltage in the memory cell It may be characterized by having a multi-level characteristic of multiple resistances by generating a second resistance between the electrodes at both ends.

In addition, in the initialization / reset state in which no voltage is applied to the both ends of the electrode, the liquid crystal cell may be distributed in the memory cell such that the long axis direction is oriented in one direction, or the long axis direction may be randomly distributed. have.

In addition, the both ends of the electrode may be formed in a diagonal structure on the upper substrate and the lower substrate to constitute the memory cell having a square shape.

In addition, the positive electrode is formed on any one of the upper substrate and the lower substrate, and the liquid crystal cell has positive dielectric anisotropy or negative dielectric anisotropy according to the frequency of the voltage applied to the positive electrode. It can be formed of a frequency-dependent dielectric constant anisotropic liquid crystal having a.

In addition, in the liquid crystal cell, when a voltage is applied to both ends of the electrode, an alignment layer having an alignment force enabling movement of the surface liquid crystal may be formed.

Further, in the liquid crystal cell, an alignment layer having an alignment force of 0 to 10 ^-8 J / m ² may be formed.

In addition, the liquid crystal cell may be formed of an alignment film composed of any one of PMMA, PVA and Polystyrene.

In addition, the liquid crystal cell may be formed of an alignment layer made of a material having a glass transition temperature below the driving environment temperature.

In addition, the liquid crystal cell, the positive liquid crystal rotating in the direction of the electric field by the voltage applied to the both ends of the electrode, the negative liquid crystal rotating in the direction opposite to the direction of the electric field, and the frequency of the voltage applied to the both ends of the electrode Accordingly, it may be implemented with any of frequency-dependent dielectric anisotropy liquid crystals having positive dielectric anisotropy or negative dielectric anisotropy.

Also, it may be a neuromorphic device including a switching resistance memory device.

According to the present invention, a memory cell unit having multi-level characteristics of multiple resistances and linearity of output resistance to input voltage may be implemented using a liquid crystal cell having a relatively low surface orientation.

In addition, a switching resistor memory device having a multi-level characteristic may be implemented using the memory cell unit, and may be simply implemented by removing only a color filter from a conventional LCD display panel.

In addition, the switching resistance memory device secures linearity of an output resistance to an input voltage and can be applied to various electronic devices, logic devices, and the like.

1A to 1C are diagrams schematically illustrating a memory cell unit according to an embodiment of the present invention.
FIG. 2 is a graph measuring resistances occurring between electrodes at both ends in the case of FIGS. 1B and 1C.
3 is a schematic diagram of a switching resistance memory device according to an embodiment of the present invention.
4 is a schematic diagram of a switching resistance memory device according to another embodiment of the present invention.
5 to 10 are views schematically showing various examples of a method for inducing resistance in the switching resistance memory device of the present invention.
11 is a view showing an example of the upper substrate constituting the switching resistance memory device of the present invention when the liquid crystal cell is implemented as a positive liquid crystal or a negative liquid crystal.
12 is a view showing an example of a lower substrate constituting the switching resistance memory device of the present invention when the liquid crystal cell is implemented as a positive liquid crystal or a negative liquid crystal.
13 is a diagram illustrating a memory cell formed when the upper substrate and the lower substrate shown in FIGS. 11 and 12 are in contact.
14 is a view illustrating an example of an upper substrate constituting the switching resistance memory device of the present invention when the liquid crystal cell is implemented with a frequency-dependent dielectric anisotropic liquid crystal.
15 is a diagram illustrating an example of a lower substrate constituting the switching resistance memory device of the present invention when the liquid crystal cell is implemented with a frequency-dependent dielectric anisotropic liquid crystal.
16 is a diagram illustrating a memory cell formed when the upper substrate and the lower substrate shown in FIGS. 14 and 15 are in contact.

For a detailed description of the present invention, which will be described later, reference is made to the accompanying drawings that illustrate, by way of example, specific embodiments in which the invention may be practiced. These examples are described in detail enough to enable those skilled in the art to practice the present invention. It should be understood that the various embodiments of the present invention are different, but need not be mutually exclusive. For example, the specific shapes, structures, and properties described herein can be implemented in other embodiments without departing from the spirit and scope of the invention in connection with one embodiment. In addition, it should be understood that the location or placement of individual components within each disclosed embodiment can be changed without departing from the spirit and scope of the invention. Therefore, the following detailed description is not intended to be taken in a limiting sense, and the scope of the present invention, if appropriately described, is limited only by the appended claims, along with all ranges equivalent to those claimed. In the drawings, similar reference numerals refer to the same or similar functions throughout several aspects.

Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the drawings.

1A to 1C are diagrams schematically illustrating a memory cell unit according to an embodiment of the present invention, and FIGS. 2A and 1C are graphs measuring resistance between electrodes at both ends.

Referring to FIG. 1A, a memory cell unit 1 according to an embodiment of the present invention may include a liquid crystal cell 20 positioned between both ends electrodes 11 and 13 and both ends electrodes 11 and 13. .

When the voltage is applied to both ends of the electrodes 11 and 13, an electric field may be generated therebetween. The implementation of the both ends of the electrodes 11 and 13 is not limited to a specific technique, and may be, for example, copper or platinum.

The liquid crystal cell 20 may be distributed to be oriented one-way or randomly between both ends of the electrodes 11 and 13. The liquid crystal cell 20 may be located between both ends of the electrodes 11 and 13 to generate resistance when a voltage is applied to both ends of the electrodes 11 and 13. The implementation of the liquid crystal cell 20 is not limited to a specific technology, and may be, for example, a TN electrically controllable birefringence (ECB) cell or a TN optically compensated bend (OCB) cell.

The liquid crystal cell 20 may rotate according to the direction and intensity of the electric field generated between the electrodes 11 and 13 at both ends. The liquid crystal cell 20 may be embodied as a positive liquid crystal rotating in the direction of the electric field by a voltage applied to both ends electrodes 11 and 13 or a negative liquid crystal rotating in a direction opposite to the direction of the electric field. Alternatively, the liquid crystal cell 20 may be implemented as a frequency-dependent dielectric anisotropy liquid crystal having positive dielectric anisotropy or negative dielectric anisotropy depending on the frequency of the voltage applied to both ends electrodes 11 and 13.

In general, since the dielectric constant between the long axis direction (m) and the short axis direction of the liquid crystal cell 20 is different, resistance according to the orientation of the long axis direction (m) between both ends of the electrodes (11, 13) can be generated. The memory cell unit 1 according to an embodiment of the present invention may change the resistance or dielectric constant between the electrodes 11 and 13 at both ends according to a change in the orientation of the liquid crystal cell 20.

To this end, the liquid crystal cell 20 may be formed with an alignment film having a relatively small alignment force. It is common for the liquid crystal cell 20 to be formed with an alignment layer that makes it impossible to move the surface liquid crystal even when a voltage is applied to both ends electrodes 11 and 13. That is, since the general liquid crystal cell 20 has a large orientation force holding the surface liquid crystal, when a voltage is applied to both ends of the electrodes 11 and 13, the surface liquid crystal does not move and only the bulk liquid crystal changes in the direction and intensity of the electric field. When the voltage applied to both ends of the electrodes 11 and 13 is removed, the bulk liquid crystal returns to the initial state by the orientation force of the surface liquid crystal.

In this embodiment, the liquid crystal cell 20 may be formed with an alignment film having an alignment force that enables movement of the surface liquid crystal when voltage is applied to both ends of the electrodes 11 and 13. For example, the liquid crystal cell 20 may be formed of an alignment film having an alignment force of 0 to 10-8J / m ² , and an alignment film formed of any one of PMMA, PVA and Polystyrene may be formed. .

In addition, the liquid crystal cell 20 may be formed with an alignment layer having a glass transition temperature (Tg) lower than the driving environment temperature of the memory cell unit 1. For example, when the driving environment temperature of the memory cell unit 1 is 50 ° C, the liquid crystal cell 20 may have an alignment layer formed of a material having a Tg of 50 ° C or less, or the memory cell unit 1 When the driving environment temperature of is 80 ° C, the liquid crystal cell 20 may be formed with an alignment layer made of a material having a Tg of 80 ° C or less.

Therefore, when a voltage is applied to both ends of the electrodes 11 and 13, the liquid crystal cell 20 can move both the surface liquid crystal and the bulk liquid crystal according to the direction and intensity of the electric field, and are applied to both ends of the electrodes 11 and 13 When the voltage is removed, the current state (stable state) can be maintained without returning to the initial state.

As described above, the liquid crystal cell 20 changes in the long axis direction m according to the direction and intensity of the electric field generated between the both ends electrodes 11 and 13, and the both end electrodes 11 and 13 according to the change in the long axis direction m. ) To generate different resistors, thereby realizing multi-level characteristics of multiple resistors.

For example, FIG. 1A may be in an initialization / reset state in which no voltage is applied to both ends electrodes 11 and 13, and in this case, the liquid crystal cell 20 has a long axis direction (between both ends electrodes 11 and 13). m) may be distributed so as to be oriented in one direction, or may be distributed such that the long axis direction m is random.

1B may be a state in which a first voltage is applied to both ends of the electrodes 11 and 13, and in this case, the liquid crystal cell 20 has a long axis direction m depending on the strength and direction of the electric field due to the first voltage. Can be rotated.

In addition, even if the first voltage is not applied to both ends of the electrodes 11 and 13 in a state in which the long axis direction m of the liquid crystal cell 20 is rotated as shown in FIG. 1B, the liquid crystal cell 20 is initialized / reset as shown in FIG. 1A. You can keep your current state without going back to it.

1C may be a state in which a second voltage higher than a first voltage is applied to both ends of the electrodes 11 and 13, and in this case, the liquid crystal cell 20 has a long axis according to the strength and direction of the electric field due to the second voltage. The direction m can be rotated. In this case, when comparing FIGS. 1B and 1C, it can be seen that the rotation angle of the liquid crystal cell 20 is changed according to the magnitude of the voltage applied to both ends electrodes 11 and 13.

As shown in FIG. 1C, even when the second voltage is not applied to both ends of the electrodes 11 and 13 in a state in which the long axis direction m of the liquid crystal cell 20 is rotated, the liquid crystal cell 20 is initialized / reset as shown in FIG. 1A. You can stay current without going back.

Referring to FIG. 2, when a first voltage is applied to both ends electrodes 11 and 13, a first resistance state is developed between both ends electrodes 11 and 13 by the liquid crystal cell 20, and both ends electrodes 11, When the second voltage is applied to 13), the resistance state is changed between the electrodes 11 and 13 at both ends by the liquid crystal cell 20, so that the second resistance state can be expressed.

As described above, the memory cell unit 1 according to an embodiment of the present invention may change resistance generated at both ends of the electrodes 11 and 13 according to the magnitude of the voltage applied to the both ends of the electrodes 11 and 13. That is, the memory cell unit 1 according to an embodiment of the present invention may have multi-level characteristics of multiple resistors, and thus, may be applied to a multi-level switchable resistance change memory element (RAM).

3 is a schematic diagram of a switching resistance memory device according to an embodiment of the present invention.

Referring to FIG. 3, the switching resistance memory device 100 according to an embodiment of the present invention is formed by both ends electrodes 111 and 113 and both ends electrodes 111 and 113 respectively formed on the upper substrate and the lower substrate. It may be configured as a memory cell 115. Hereinafter, for convenience of description, in FIG. 3, the vertical electrodes 1, 2, 3, 4,? Are considered to be formed on the upper substrate and are referred to as upper electrodes 111, and the horizontal electrodes A, B, C, ?) Is considered to be formed on the lower substrate and is referred to as the lower electrode 113.

When a voltage is applied to the upper electrode 111 and the lower electrode 113, an electric field between the upper electrodes 111, between the lower electrodes 113, or between the upper electrodes 111 and the lower electrodes 113 is applied. Can cause The implementation of the upper electrode 111 and the lower electrode 113 is not limited to a specific technology, and may be, for example, copper or platinum.

The upper electrode 111 and the lower electrode 113 may be formed on the upper substrate and the lower substrate, respectively, or may be formed on only one of the upper substrate and the lower substrate according to the dielectric constant characteristics of the memory cell 115 to be described later. A detailed description in this regard will be described later.

When the upper electrode 111 and the lower electrode 113 are respectively formed on the upper substrate and the lower substrate, they may be formed diagonally or asymmetrically.

The memory cell 115 may be applied with a memory cell unit 1 according to an embodiment of the present invention illustrated in FIGS. 1A to 1C. That is, the memory cell 115 may be configured as the liquid crystal cell 20 as shown in FIGS. 1A to 1C. The memory cell 115 may have multi-level characteristics that generate different resistances according to voltages applied to the upper electrode 111 or the lower electrode 113, and detailed description of the memory cell 115 is as described above. Replace. The switching resistance memory device 100 according to an embodiment of the present invention may implement a memory operation using a phenomenon in which the resistance state is changed by the memory cell 115.

The switching resistance memory device 100 according to an embodiment of the present invention may be implemented by removing a color filter from an LCD display panel. The LCD display panel may display a desired image on a screen by using a difference in light transmittance caused by a change in arrangement of liquid crystal cells injected into each pixel. The switching resistance memory device 100 according to an embodiment of the present invention may utilize a rectangular pixel formed by the upper electrode 111 and the lower electrode 113 in the conventional LCD display panel as the memory cell 115. have.

4 is a schematic diagram of a switching resistance memory device according to another embodiment of the present invention.

Referring to FIG. 4, the switching resistance memory device 100 ′ according to another embodiment of the present invention is compared to the switching resistance memory device 100 according to an embodiment of the present invention illustrated in FIG. 3, the memory cell 115 The difference is that ') is implemented in a square shape rather than a rectangular shape, and the other features are the same.

The switching resistance memory device 100 ′ according to another embodiment of the present invention increases the lower electrode 113 by a factor of 2 compared to the switching resistance memory device 100 according to an embodiment of the present invention shown in FIG. 3. A square shape memory cell 115 'may be formed. The square shape memory cell 115 ′ may have a higher degree of integration than the rectangular shape.

5 to 10 are views schematically showing various examples of a method for inducing resistance in the switching resistance memory device of the present invention.

The switching resistance memory device 100 according to the present invention, as shown in FIG. 3, the resistance change by the memory cell 115 of the rectangular shape formed by the upper electrode 111 and the lower electrode 113 or in FIG. 4 As shown in the figure, the resistance change caused by the square-shaped memory cells 115 ′ formed in the upper electrode 111 and the lower electrode 113 includes a resistance change occurring in the manner shown in FIGS. 5 to 10. can do.

In FIG. 5 to FIG. 10, the hatched rectangular shape represents an electrode in a voltage-applied state, and the rectangular shape painted in black represents an electrode in a voltage-free condition, and a dash between them represents a liquid crystal cell.

Referring to FIG. 5, for a horizontal electrode, a resistance change may occur due to a liquid crystal cell injected between two electrodes.

Referring to FIG. 6, a change in resistance may be caused by a liquid crystal cell injected between a horizontally disposed electrode and a vertical electrode.

Referring to FIGS. 7 and 8, in a liquid crystal cell injected between an electrode in a horizontal direction and an electrode in a vertical direction, diagonal voltages are applied to electrodes in a linear direction, a linear direction, or an opposing direction to achieve multiple levels. Resistance changes can be induced.

9 and 10, in a liquid crystal cell injected between a horizontally disposed electrode and a vertical electrode, a diagonal or curvature electric field may be generated, and a liquid crystal cell by a diagonal or curvature electric field A change in resistance may occur due to a change in orientation.

11 is a view showing an example of the upper substrate constituting the switching resistance memory device of the present invention when the liquid crystal cell is implemented as a positive liquid crystal or a negative liquid crystal, and FIG. 12 shows that the liquid crystal cell is a positive liquid crystal or negative When implemented with a liquid crystal of, it is a diagram showing an example of the lower substrate constituting the switching resistance memory device of the present invention, Figure 13 is a memory formed when the upper substrate and the lower substrate shown in Figures 11 and 12 are in contact It is a diagram showing a cell.

In the switching resistance memory device of the present invention, the liquid crystal cell injected into the memory cell may be implemented as a positive liquid crystal rotating in the direction of the electric field or a negative liquid crystal rotating in a direction opposite to the direction of the electric field. In this case, the memory cell needs four electrodes. That is, in the switching resistance memory device of the present invention, both ends of the electrodes are formed on the upper substrate and the lower substrate. For example, a voltage is applied to the electrodes formed on the upper substrate to rotate the liquid crystal cell to change the resistance. The rotated liquid crystal cell may be returned again by applying a voltage to the formed electrode.

Referring to FIG. 11, the upper substrate is provided with an upper electrode 111 in a vertical direction, and a resistance circuit is provided between the upper electrodes 111 to implement a memory transistor. Here, the resistance circuit corresponds to a liquid crystal cell. The upper electrode 111 may be a gate electrode, and the data line may be connected to either a drain electrode or a source electrode.

For example, when a voltage is applied to the upper electrode 111, a resistance having a specific value may be generated by a change in the orientation of the liquid crystal cells constituting the memory cell 115. At this time, when a signal is applied to the data line, data may be input to the memory cell 115.

Referring to FIG. 12, the lower substrate 113 may be provided in the lower substrate in the horizontal direction. The lower electrode 113 may be a gate electrode, and the data line may be connected to either a drain electrode or a source electrode.

Referring to FIG. 13, when the upper substrate and the lower substrate are in contact, the memory cell 115 may be formed by the upper electrode 111 and the lower electrode 113. For convenience of description, the electrode lines of the transistors shown in FIGS. 11 and 12 are omitted.

14 is a view showing an example of the upper substrate constituting the switching resistance memory device of the present invention when the liquid crystal cell is implemented as a frequency-dependent dielectric anisotropic liquid crystal, FIG. 15 is a liquid crystal cell implemented as a frequency-dependent dielectric anisotropic liquid crystal If possible, it is a diagram showing an example of a lower substrate constituting the switching resistance memory device of the present invention, and FIG. 16 illustrates a memory cell formed when the upper substrate and the lower substrate shown in FIGS. 14 and 15 are in contact. It is a drawing.

In the switching resistance memory device of the present invention, the liquid crystal cell injected into the memory cell may be implemented as a frequency-dependent dielectric anisotropy liquid crystal having positive dielectric anisotropy or negative dielectric anisotropy depending on the frequency of the voltage. In this case, the memory cell may implement a memory operation using only two electrodes. That is, the switching resistance memory device of the present invention forms both ends of the electrode on one of the upper substrate and the lower substrate, for example, forms both ends of the electrode only on the upper substrate, rotates the liquid crystal cell by generating a positive frequency on both ends of the electrode In addition, it is possible to return the rotated liquid crystal cell again by generating a negative frequency on both ends of the electrode. Hereinafter, an electrode is formed only on the upper substrate.

Referring to FIG. 14, the upper substrate may be provided with a vertical upper electrode 111 and a common electrode forming both ends of the upper electrode 111. The upper electrode 111 may be a gate electrode, and the data line may be connected to either a drain electrode or a source electrode.

Referring to FIG. 15, the lower substrate may be provided with a resistance circuit forming the memory cell 115 by both ends electrodes formed on the upper substrate. The resistance circuit corresponds to a liquid crystal cell.

Referring to FIG. 16, when the upper substrate and the lower substrate are in contact, the memory cell 115 may be formed by the upper electrode 111 and the common electrode, and a resistance circuit, that is, a liquid crystal cell may be positioned therebetween. have.

For example, when a voltage is applied to the upper electrode 111 and the common electrode, a resistance having a specific value may be generated by a change in the orientation of the liquid crystal cells constituting the memory cell 115. At this time, when a signal is applied to the data line, data may be input to the memory cell 115.

As described above, the switching resistance memory device according to the present invention can implement the linearity of the output resistance to the input voltage using a memory cell having multi-level characteristics of multiple resistances using a liquid crystal cell having a relatively low surface orientation. .

Accordingly, the switching resistance memory device according to the present invention can be applied to various electronic devices, logic devices, and the like. For example, the switching resistance memory device according to the present invention may be applied to a synapse device, and the synapse device may be applied to a neuromorphic device.

In addition, a circuit or chip with artificial intelligence, a circuit or chip operating as a neural network, a technology for overcoming the limitations of existing digital information processing, a neuron-like operation The switching resistance memory device according to the present invention can be applied to such a possible circuit or chip, a device capable of simultaneously switching with memory, and the like.

Although described above with reference to embodiments, those skilled in the art understand that various modifications and changes can be made to the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. Will be able to.

1: Memory cell unit
11, 13: both ends of the electrode
20: liquid crystal cell
100: switching resistance memory element
111: upper electrode
113: lower electrode
115: memory cell

Claims (17)

Both ends electrodes; And
A memory cell unit including a liquid crystal cell positioned between the both ends of the electrode, the long axis direction being changed according to the voltage applied to the both ends electrodes, and generating different resistances between the both ends electrodes according to the change in the long axis direction. According to claim 1,
The liquid crystal cell,
When a voltage is applied to the both ends of the electrode, a memory cell unit in which an alignment layer having an alignment force enabling movement of the surface liquid crystal is formed. According to claim 2,
The liquid crystal cell,
A memory cell unit in which an alignment film having an alignment force between 0 and 10 ^-8 J / m ² is formed. According to claim 1,
The liquid crystal cell,
A memory cell unit in which an alignment layer formed of any one of PMMA, PVA and Polystyrene is formed. According to claim 1,
The liquid crystal cell,
A memory cell unit in which an alignment layer made of a material having a glass transition temperature below a driving environment temperature is formed. According to claim 1,
The liquid crystal cell,
It has a positive dielectric anisotropy according to the frequency of the voltage applied to the positive electrode and the positive liquid crystal rotating in the direction opposite to the direction of the electric field, the positive liquid crystal rotating in the direction of the electric field by the voltage applied to the both ends of the electrode. A memory cell unit implemented as one of frequency-dependent dielectric anisotropy liquid crystals having negative or negative dielectric anisotropy. Upper substrate;
Lower substrate;
Both ends formed on at least one of the upper substrate and the lower substrate; And
A switching resistor comprising a liquid crystal cell constituting a memory cell formed by the both ends of the electrode, a long axis direction changing according to a voltage applied to the both ends, and generating different resistances in the memory cell according to the long axis direction. Memory device. The method of claim 7,
The liquid crystal cell,
When a first voltage is applied to the both ends of the electrode, a first resistance is generated between the both ends of the electrode by maintaining the state in which the long axis direction is rotated according to the strength and direction of the electric field by the first voltage in the memory cell,
When a second voltage higher than the first voltage is applied to the both ends of the electrode, the long axis direction is rotated according to the strength and direction of the electric field by the second voltage in the memory cell to remove the difference between the both ends of the electrode. A switching resistor memory device having a multi-level characteristic of multiple resistors by generating two resistors. The method of claim 8,
The liquid crystal cell,
In the initialization / reset state in which no voltage is applied to the both ends of the electrode, the switching resistance memory element is distributed in the memory cell such that the long axis direction is oriented in one direction or the long axis direction is random. The method of claim 7,
The both ends of the electrode,
A switching resistance memory element formed in a diagonal structure on the upper substrate and the lower substrate to configure the square shape of the memory cell. The method of claim 7,
The both ends of the electrode,
It is formed on any one of the upper substrate and the lower substrate,
The liquid crystal cell,
A switching resistance memory device formed of a frequency-dependent dielectric anisotropy liquid crystal having positive dielectric anisotropy or negative dielectric anisotropy according to the frequency of a voltage applied to the both ends of the electrode. The method of claim 7,
The liquid crystal cell,
When a voltage is applied to the both ends of the electrode, a switching resistor memory device is formed with an alignment layer having an alignment force that enables movement of the surface liquid crystal. The method of claim 12,
The liquid crystal cell,
A switching resistance memory device in which an alignment film having an alignment force between 0 and 10 ^-8 J / m ² is formed. The method of claim 12,
The liquid crystal cell,
A switching resistance memory device in which an alignment layer formed of any one of PMMA, PVA and Polystyrene is formed. The method of claim 7,
The liquid crystal cell,
A switching resistance memory device in which an alignment layer made of a material having a glass transition temperature below a driving environment temperature is formed. The method of claim 7,
The liquid crystal cell,
It has a positive dielectric anisotropy according to the frequency of the voltage applied to the positive electrode and the positive liquid crystal rotating in the direction opposite to the direction of the electric field, the positive liquid crystal rotating in the direction of the electric field by the voltage applied to the both ends of the electrode. Or a switching-resistance memory device implemented as one of frequency-dependent dielectric anisotropy liquid crystals having negative dielectric anisotropy. 16. A neuromorphic device comprising the switching resistance memory device of any one of claims 7-16.

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