KR20190115681A - Pellicle for Extreme Ultraviolet(EUV) Lithography and Method for fabricating the same - Google Patents

Abstract

Disclosed are a pellicle for extreme ultraviolet lithography having excellent mechanical strength and thermal characteristics with respect to extreme ultraviolet exposure light, and a method of manufacturing the same. The pellicle is a pellicle layer or frame including a support layer pattern, an etch stop layer pattern formed on the support layer pattern, and a reinforcement region supported by the support layer pattern and the etch stop layer pattern and having regions having different mechanical strength from other portions. And a pellicle layer supported by the layer and the frame layer, the pellicle layer including a reinforcement region having a region having a different mechanical strength from the other portions. Herein, the reinforcement region is formed to have a structure arranged in the form of a polygonal structure including a lattice, a mesh, a honeycomb structure, or a circular shape in order to enhance the mechanical strength and thermal properties of the pellicle layer.

Description

Pellicle for extreme ultraviolet lithography and its manufacturing method {Pellicle for Extreme Ultraviolet (EUV) Lithography and Method for fabricating the same}

BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a pellicle for extreme ultraviolet lithography and a method for manufacturing the same. More specifically, a pellicle for extreme ultraviolet lithography having a high transmittance with respect to extreme ultraviolet exposure light and capable of improving thermal characteristics and mechanical strength, and its manufacture It is about a method.

Currently, the exposure process using the ArF wavelength band of 193nm commercially available exposure process to form a fine pattern on the wafer, but for the formation of the fine pattern below 50nm shows a limit due to light diffraction and scattering have. Accordingly, Immersion lithography using a liquid medium (refractive index 1.44) having a refractive index larger than that of air in recent years, Double lithography, which doubles an exposure process, and adjacent transmitted light by inverting the phase of light by 180 °. Phase shift technology to generate over-interference interference, and optical phase correction to compensate for the phenomenon that the pattern is smaller or rounded than the designed pattern size due to light interference and diffraction effect. Methods are being developed.

However, exposure techniques using ArF wavelengths are not only difficult to realize finer circuit widths of 32 nm or less, but also increase production costs and process complexity. Therefore, EUV lithography technology using extreme ultraviolet light (hereinafter referred to as EUV) light, which uses a very short wavelength of 13.5 nm as the main exposure wavelength, is drawing attention as a next-generation process.

On the other hand, in the lithography process, a photomask is used as an original plate for patterning, and a pattern on the photomask is transferred to a wafer. If impurities, such as particles and foreign substances, adhere to the photomask, Due to the impurities, the exposure light may be absorbed or reflected and the transferred pattern may be damaged, resulting in a decrease in performance or yield of the semiconductor device.

Accordingly, in order to prevent impurities from adhering to the surface of the photomask, a method of attaching a pellicle to the photomask is used. The pellicle is disposed on the surface of the photomask, and even if impurities are deposited on the pellicle, the focus is matched on the pattern of the photomask during the photolithography process, so that dust or foreign matter on the pellicle is out of focus and is not transferred to the pattern. . In recent years, as the circuit line width becomes smaller, the size of impurities that may affect the pattern damage is also reduced, and the role of the pellicle for protecting the photomask becomes more important.

The pellicle is generally composed of a single membrane in consideration of transmittance and the like. However, in this case, if a material having a low extinction coefficient (xtinction coefficient) for the extreme ultraviolet light of 13.5nm may be easy to secure the transmittance, it is extremely difficult to secure excellent mechanical and thermal properties. Accordingly, various types of pellicles have been studied to complement the pellicle performance.

BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a pellicle for extreme ultraviolet lithography and a method for manufacturing the same, and more particularly, a pellicle for extreme ultraviolet lithography having a high transmittance with respect to exposure light for extreme ultraviolet rays and capable of improving thermal characteristics and mechanical strength. It is an object to provide a manufacturing method.

A pellicle for extreme ultraviolet lithography according to a preferred structure of the present invention includes at least a support layer pattern, an etch stop layer pattern and a pellicle layer, wherein the pellicle layer is supported by the support layer pattern and the etch stop layer pattern, and the other part. And a reinforcement region having regions of different mechanical strength from each other.

A pellicle for extreme ultraviolet lithography according to another preferred structure of the present invention includes at least a frame layer and a pellicle layer, wherein the pellicle layer is supported by the frame layer, and has a reinforcement region having a region different in mechanical strength from other portions. Include.

The reinforcement region has a structure arranged in one of a polygonal structure including a lattice, a mesh, a honeycomb structure, or a circular shape.

The reinforcement region further includes a material containing at least one of boron (B), phosphorus (P), arsenic (As), yttrium (Y), zirconium (Zr), niobium (Nb), and molybdenum (Mo). It is done by

The material is implanted through doping and the reinforcement region has a doping concentration of at least 10 ¹⁸ ions / cm 3.

The reinforcement region has a line width of 2 µm to 100 µm.

The pellicle layer further comprises a functional layer formed on the top, bottom or both surfaces.

The functional layer is composed of a heat dissipation layer or a reinforcement layer or a heat dissipation layer and a reinforcement layer, and is formed in a single layer or a multilayer structure.

According to one preferred structure of the present invention, a method for manufacturing a pellicle for extreme ultraviolet lithography may include preparing a substrate including a support layer, an etch stop layer, and a pellicle layer; Forming an ion implantation mask layer on the upper surface of the substrate and performing a patterning process to form an ion implantation mask pattern including a pattern exposing a portion of the pellicle layer; Doping at least one of boron, phosphorus, arsenic, yttrium, zirconium, niobium, and molybdenum to the portion of the pellicle layer exposed between the patterns to form a reinforcement region having regions having different mechanical strength from the other portions; Removing the ion implantation mask pattern and forming an etching mask layer on both sides of the substrate; Forming a photoresist film on the bottom surface of the substrate and performing a patterning process to form a photoresist film pattern; Forming patterns of the lower thin film layer exposing the support layer by sequentially etching the etch mask layer, the pellicle layer, and the etch stop layer under the support layer using the photoresist pattern as an etch mask; Removing the photoresist layer pattern, and forming a support layer pattern exposing the etch stop layer by using the etch mask pattern as an etch mask; Removing an etch mask layer on the substrate, an etch mask layer pattern on the substrate, and an exposed etch stop layer.

The present invention can provide a pellicle for an extreme ultraviolet photomask having excellent mechanical strength and thermal properties while maintaining high transmittance with respect to extreme ultraviolet light.

1 is a cross-sectional view of a pellicle for extreme ultraviolet lithography according to the first and second structures of the present invention.
2 is a cross-sectional view of a pellicle for extreme ultraviolet lithography according to a third and fourth structure of the present invention.
3 is a plan view showing the reinforcement region of the pellicle layer of the present invention.
4 is a diagram sequentially illustrating a method for manufacturing a pellicle for extreme ultraviolet lithography according to the first structure shown in FIG. 1.
FIG. 5 is a diagram sequentially illustrating a method for manufacturing a pellicle for extreme ultraviolet lithography according to the third structure shown in FIG. 2.

Hereinafter, the present invention will be described in detail through embodiments of the present invention with reference to the drawings, but the embodiments are only used for the purpose of illustrating and explaining the present invention, and the present invention described in the meaning limitations and claims. It is not intended to limit the scope of. Therefore, it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible from the embodiments. Therefore, the true technical protection scope of the present invention will be defined by the technical details of the claims.

Figure 1 (a) is a cross-sectional view showing a pellicle for extreme ultraviolet lithography according to the first structure of the present invention, Figure 1 (b) is a cross-sectional view showing a pellicle for an extreme ultraviolet lithography according to the second structure, 3 is a plan view showing the reinforcement region of the pellicle layer.

Referring to FIG. 1A, the pellicle 100 according to the first structure of the present invention includes at least a support layer pattern 102a, an etch stop layer pattern 103a, and a pellicle layer 104.

The support layer pattern 102a serves to support the pellicle layer 104 and to facilitate handling and transport when the pellicle fabrication is completed. The support layer pattern 102a may be formed by fine processing a quartz, silicon (Si), or silicon on insulator (SOI) wafer by a dry or wet etching process, and has a thickness of 400 μm to 800 μm.

The etch stop layer pattern 103a is buried between the support layer pattern 102a and the pellicle layer 104, and during the dry or wet etching of the support layer 102 to form the support layer pattern 102a, the pellicle layer 104 is formed. It acts as an etch stop layer to prevent etching. To this end, the etch stop layer pattern 103a includes at least one of carbon (C), nitrogen (N), and oxygen (O) in the support layer pattern 102a and silicon (Si) having excellent etching selectivity. It comprises a silicon (Si) compound, or at least one of silicon carbide (SiC), boron carbide (B ₄ C), ruthenium (Ru), molybdenum (Mo), graphene (Graphene). The etch stop layer pattern 103a has a thickness of 10 nm to 500 nm.

The pellicle layer 104 is composed of a silicon layer having properties of a single crystal, an amorphous or polycrystalline state, and has a thickness of 10 nm to 100 nm, and preferably has a thickness of 20 nm to 70 nm. In addition, the pellicle layer 104 has a transmittance of 85% or more with respect to EUV exposure light.

The pellicle layer 104 is configured to include a reinforcement region 106 having a region that differs in mechanical strength from other portions in plan view. In this case, the reinforcement region 106 may have one of a polygonal structure including a lattice, a mesh, and a honeycomb structure or a circular shape, and the pellicle layer 104 may be formed by gravity by improving mechanical properties of the pellicle layer 104. It serves to prevent sag and to prevent breakage of the pellicle layer 104.

In addition, the reinforcement region 106 serves to minimize thermal damage to high-energy extreme ultraviolet exposure light during the exposure process. For this purpose, boron (B), phosphorus (P), arsenic (As) and yttrium ( Y), zirconium (Zr), niobium (Nb) and molybdenum (Mo) is included. At this time, these materials included in the reinforcement region 106 are injected by doping, and the doping concentration in the doping process is preferably 10 ¹⁸ ions / cm 3 or more.

In addition, referring to FIG. 3, the reinforcement region 106 has, for example, a structure arranged in a honeycomb form based on a planar shape, and the larger the line width L of the honeycomb pattern line is in the pellicle 100. Mechanical and thermal properties, such as support for, are enhanced. Accordingly, the reinforcement region 106 should be arranged in a pattern structure optimized to sufficiently express excellent optical, mechanical and thermal characteristics, and the reinforcement region pattern line has a line width L of 0.1 μm to 100 μm, preferably Preferably, it has a line width L of 2 micrometers-100 micrometers.

FIG. 1B is a variation of FIG. 1A, and the pellicle 200 for extreme ultraviolet lithography according to the present modification includes a support layer pattern 102a, an etch stop layer pattern 103a, and a reinforcement region 106. A pellicle layer 104 and a functional layer 109 are included. Here, the pellicle layer 104 including the support layer pattern 102a, the etch stop layer pattern 103a, and the reinforcement region 106 is the same as that of FIG. 1A, and the functional layer 109 is a pellicle layer ( Formed on the top, bottom or both sides of 104). The functional layer 109 is formed of a single layer or a multilayer of two or more layers. The functional layer 109 is formed to improve the thermal and mechanical properties of the pellicle, and is composed of at least one layer of the reinforcing layer or the heat dissipating layer.

The reinforcing layer is chromium (Cr), chromium nitride (CrN), aluminum (Al), aluminum oxide (Al ₂ O ₃ ), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium for mechanical reinforcement (V), palladium (Pd), titanium (Ti), platinum (Pt), manganese (Mn), iron (Fe), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), Lithium (Li), selenium (Se), copper (Cu), yttrium (Y), indium (In), tin (Sn), boron (B), beryllium (Be), tantalum (Ta), hafnium (Hf), Niobium (Nb), silicon (Si), ruthenium (Ru), ruthenium (Ru) compound including B, Zr, Y, Nb, Ti, La in Ru, B ₄ C, SiC, SiO ₂ , SixNy (x, y is an integer), graphene (Craphene), CNT (Carbon Nano-Tube: carbon nanotubes) comprising at least one or a material, or the silicide material containing silicon (Si) in the material Or one or more of oxygen (O), nitrogen (N), and carbon (C) in the one or more materials and silicide materials.

The heat dissipating layer is chromium (Cr), chromium nitride (CrN), aluminum (Al), aluminum oxide (Al2O3), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), palladium (Pd), titanium (Ti), platinum (Pt), manganese (Mn), iron (Fe), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), Lithium (Li), selenium (Se), copper (Cu), yttrium (Y), indium (In), tin (Sn), boron (B), beryllium (Be), tantalum (Ta), hafnium (Hf), Niobium (Nb), silicon (Si), ruthenium (Ru), at least one or more of ruthenium (Ru) compounds including B, Zr, Y, Nb, Ti, La in Ru, B ₄ C, SiC Consists of a material comprising, a silicide material comprising silicon (Si) in the material, or at least one of oxygen (O), nitrogen (N) and carbon (C) in the at least one material and the silicide material It is configured to further include.

In the present invention, the functional layer 109 may have a single layer or a multilayer structure consisting of a reinforcing layer or a heat dissipating layer, or a multilayer structure consisting of a reinforcing layer and a heat dissipating layer. At this time, the reinforcing layer and the heat dissipating layer each have a thickness of 2nm to 20nm, preferably made of different materials from each other.

FIG. 2A is a cross-sectional view showing a pellicle for extreme ultraviolet lithography according to a third structure of the present invention, and FIG. 2B is a cross sectional view showing a pellicle for extreme ultraviolet lithography according to a fourth structure.

Referring to FIG. 2A, the pellicle 300 according to the third structure includes at least the frame layer 110 and the pellicle layer 104 thereon.

The frame layer 110 serves to support the pellicle layer 104, but is configured in a form that can be attached to the pellicle layer 104 through an adhesive, and can prevent internal and external pressure adjustment and foreign matter mixing. The ULPA filter is configured to be attached to the side of the frame layer (110).

The pellicle layer 104 is supported by the frame layer 110, but includes a reinforcement region 106 formed in a planar portion of the pellicle layer 104. Here, the reinforcement region 106 is the same as in Fig. 1A described above.

The pellicle layer 104 is configured to be bonded through a silicone adhesive formed on the outermost periphery of the rear surface of the frame layer 110, the material and thickness of the pellicle layer 104 is the same as in FIG. It is composed.

FIG. 2B is a variation of FIG. 2A, wherein the pellicle 400 for extreme ultraviolet lithography according to the present modification includes a frame layer 110, a pellicle layer 104 thereon, and the pellicle layer ( The functional layer 109 formed on at least one surface of the 104 is included. Here, the frame layer 110 and the pellicle layer 104 are the same as in Fig. 2 (a), the functional layer 109 is the same as in Fig. 1 (b).

FIG. 4 is a diagram sequentially illustrating a method of manufacturing a pellicle for extreme ultraviolet lithography according to the first structure shown in FIG. 1.

Referring to Figure 4 (a), used as a basis for the production of a pellicle for extreme ultraviolet lithography according to the present invention, to prepare a support layer 102 to support the pellicle layer 104 and to facilitate handling and transport during the process do. The support layer 102 may be made of quartz, SOI, or silicon wafer, but in the present invention, has a crystal orientation of [100] and has a doping density of 10 ²⁰ ions / cm ² or less, an 8 inch size, and 400 μm to 800 μm. It is preferable to use a silicon (Si) wafer having a thickness of.

Next, carbon (C) in silicon (Si) through chemical vapor deposition (CVD), thermal oxidation process, sputtering, atomic layer deposition, etc. , Silicon (Si) compounds containing at least one of nitrogen (N) and oxygen (O), or silicon carbide (SiC), boron carbide (B ₄ C), ruthenium (Ru), molybdenum (Mo), graphene ( An etching stop layer 103 having a thickness of 10 nm to 500 nm including one or more materials of graphite is formed on the upper and lower surfaces of the support layer 102.

The etching stop layer 103 may be formed of a material having a high etching selectivity with respect to the support layer 102 during the etching process. Accordingly, the etching selectivity is preferably 10 ³ or more so that the etching stop layer 103 has a sufficient wet etching selectivity with respect to the support layer 102. In addition, the etch stop layer 103 is preferably formed to have a minimum residual stress in order to prevent destruction of the pellicle layer 104 during the pellicle manufacturing process.

Referring to FIG. 4B, a pellicle layer 104 is formed on the upper and lower surfaces of the etch stop layer 103. The pellicle layer 104 is formed by epitaxial growth, chemical vapor deposition (CVD), sputtering, or the like. The pellicle layer 104 is composed of a silicon series including single crystal, amorphous and poly crystal with a thickness of 20 nm to 70 nm, and transmittance of 80% or more for EUV exposure light of 13.5 nm. It is preferable to form to have.

Referring to FIG. 4C, the reinforcement region 106 is formed in a planar portion of the pellicle layer 104. The reinforcement region 106 is first formed of a photoresist, aluminum (Al), aluminum (Al) compound, and oxide film by spin coating, chemical vapor deposition (CVD), or the like. An ion implantation mask layer 105 made of any of the above is formed on the upper surface of the pellicle layer 104. Next, the ion implantation mask layer 105 is patterned to form an ion implantation mask pattern 105a including a pattern A 'exposing a portion of the pellicle layer 104. Subsequently, boron (B), phosphorus (P), arsenic (As), yttrium (Y), zirconium (Zr), niobium (Nb), and molybdenum (Mo) are exposed to the pellicle layer 104 exposed between the patterns A '. Dopant of one or more materials to form a reinforcement region 106 with enhanced mechanical and thermal properties than the rest of the pellicle layer 104. The doping process is performed such that the doping concentration is at least 10 ¹⁸ ions / cm 3.

Referring to FIG. 4D, the ion implantation mask pattern 105a is removed, and methods such as chemical vapor deposition (CVD), sputtering, atomic layer deposition (ALD), and the like. An etch mask layer 107 for etching is formed on the upper and lower surfaces of the pellicle layer 104 including the reinforcement region 106. The etching mask layer 107 is a material having a high etching selectivity with respect to the support layer 102 and easily removed after etching the support layer 102. The etching mask layer 107 is formed of silicon (Si), carbon (C), nitrogen (N), Silicon (Si) compound containing at least one of oxygen (O) or at least one of silicon carbide (SiC), boron carbide (B ₄ C), ruthenium (Ru), molybdenum (Mo), graphene (Graphene) To form, including. In the present invention, it is preferable to use a silicon oxide film having excellent step coverage and excellent thin film density with relatively no surface defects. The etching mask layer 107 is formed to have a thickness of at least 50 nm to 500 nm in consideration of a process of etching the entire thickness of the support layer 102, and preferably to have a thickness of 100 nm or more.

Referring to FIG. 4E, after the photoresist film 108 is formed on the bottom surface of the substrate, the photoresist film 108 is patterned to form a photoresist film pattern 108a. Next, using the photoresist layer pattern 108a as an etch mask, the etch mask layer 107, the pellicle layer 104, and the etch stop layer 103 under the support layer 102 may be subjected to a dry or wet etching process. By sequentially etching, patterns of the lower thin film layer exposing the support layer 102 are formed. The lower thin film patterns include an etch mask pattern 107a, a pellicle layer pattern 104a, and an etch stop layer pattern 103a. The lower thin film pattern includes a dry etching having an excellent etch profile during the etching process for forming the lower thin film layer patterns. It is preferable to use.

Referring to FIG. 4F, after the photoresist layer pattern 108a is removed, dry etching or potassium hydroxide (hereinafter referred to as KOH) such as deep etcher and XenF2 etcher is performed. Alternatively, the support layer pattern 102a exposing the etch stop layer 103 is formed through a wet etching process such as tetramethylammonium hydroxide (hereinafter referred to as TMAH). In this case, the etching process is preferably a wet etching process, it is carried out in an etching solution of 30 ℃ to 90 ℃ temperature.

Next, the etch mask layer 107 on the upper substrate, the etch mask pattern 107a on the lower substrate, and the exposed etch stop layer 103 are removed through an etching process to thereby expose the extreme ultraviolet lithography according to the first structure of the present invention. Complete preparation of the pellicle for use. The removal may be performed at the same time. For this purpose, the etch mask layer 107 on the substrate, the etch mask pattern 107a on the substrate, and the exposed etch stop layer 103 are etched by the same etching material. It is preferable that it consists of.

Meanwhile, the etch stop layer pattern 103a and the pellicle layer pattern 104a on the lower side of the substrate may be removed as necessary to finally manufacture the pellicle 100 for extreme ultraviolet lithography according to the first structure of the present invention. .

In addition, although not shown in the drawings, after the manufacturing process of Figure 4, as shown in Figure 1 (b), based on the pellicle layer 104, the reinforcement layer or heat release layer using one of a variety of deposition methods on the top and bottom The functional layer 109 composed of at least one of the layers may be formed to complete manufacture of the pellicle 200 for extreme ultraviolet lithography according to the second structure.

FIG. 5 is a diagram sequentially illustrating a method of manufacturing a pellicle for extreme ultraviolet lithography according to the third structure illustrated in FIG. 2.

The pellicle 300 for extreme ultraviolet lithography according to the present invention may be manufactured by using another method of the process for supporting the pellicle layer 104 as compared to FIG. 4 described above, wherein the process of FIG. It is the same as the process shown to FIG. 4 (a)-(c), and the process after that is mentioned later.

Referring to FIG. 5D, after removing the ion implantation mask pattern 105a, the pellicle layer 104 and the etch stop layer 103 under the substrate are removed by a dry etching process or a wet etching process.

Referring to FIG. 5E, the frame layer 110 is attached to the pellicle layer 104 including the reinforcement region 106 on the substrate using an adhesive. The frame layer 110 may be attached before removing the etch stop layer 103 and the pellicle layer 104 under the substrate.

Referring to FIG. 5 (f), similar to the above-described etching process, the remaining support layer 102 and the etch stop layer 103 are removed through a dry or wet etching process, and thus, for extreme ultraviolet lithography according to the third structure of the present invention. The manufacture of the pellicle 300 is completed.

In addition, although not shown in the drawings, after the process of Figure 5 (f), as shown in Figure 2 (b), based on the pellicle layer 104, the reinforcement layer or heat using one of a variety of deposition methods on the upper and lower surfaces The functional layer 109 composed of at least one of the emission layers may be formed to complete the manufacture of the pellicle 400 for the extreme ultraviolet lithography according to the fourth structure.

The present invention will now be described in detail with reference to the drawings, but the structure is used only for the purpose of illustration and description of the invention and is intended to limit the scope of the invention described in the meaning limitations and claims. It is not intended to be limiting. Therefore, those skilled in the art will understand that various modifications and equivalent other structures are possible from the structure. Therefore, the true technical protection scope of the present invention will be defined by the technical details of the claims.

A ': Pattern exposing a part of pellicle layer L: Line width of reinforcement area pattern line
100: pellicle 102 according to the first structure: support layer
102a: support layer pattern 103: etch stop layer
103a: etching stop layer pattern 104: pellicle layer
104a: pellicle layer pattern 106: reinforcement region
105: ion implantation mask layer 105a: ion implantation mask pattern
107: etching mask layer 107a: etching mask pattern
108 photoresist film 108a photoresist film pattern
109: functional layer 110: frame layer
200: pellicle according to the second structure 300: pellicle according to the third structure
400: pellicle according to the fourth structure

Claims (21)

A pellicle for extreme ultraviolet lithography comprising at least a support layer pattern, an etch stop layer pattern, and a pellicle layer,
The pellicle layer is a pellicle for extreme ultraviolet lithography, which is supported by the support layer pattern and the etch stop layer pattern, and includes reinforcement regions having regions having different mechanical strength from other portions.
A pellicle for extreme ultraviolet lithography comprising at least a frame layer and a pellicle layer,
The pellicle layer is a pellicle for extreme ultraviolet lithography, which is supported by the frame layer and comprises a reinforcement region having a region different in mechanical strength from other portions.
The method according to claim 1 or 2,
The pellicle layer is a pellicle for extreme ultraviolet lithography, characterized in that it comprises a single crystal, polycrystalline or amorphous silicon.
The method according to claim 1 or 2,
The pellicle layer has a thickness of 50 nm to 100 nm pellicle for extreme ultraviolet lithography.
The method according to claim 1 or 2,
The pellicle layer is pellicle for extreme ultraviolet lithography, characterized in that having a transmittance of 85% or more.
The method according to claim 1 or 2,
The reinforcement region is a pellicle for extreme ultraviolet lithography, characterized in that having a structure arranged in the form of one of a polygonal structure or a circular shape including a grid, a mesh, a honeycomb structure.
The method according to claim 1 or 2,
The reinforcement region may include a material containing at least one ion of boron (B), phosphorus (P), arsenic (As), yttrium (Y), zirconium (Zr), niobium (Nb), and molybdenum (Mo). A pellicle for extreme ultraviolet lithography, further comprising a silicon series.
The method of claim 7, wherein
The material is implanted through doping, and the reinforcement region has a doping concentration of at least 10 ¹⁸ ions / cm 3.
The method according to claim 1 or 2,
A pellicle for extreme ultraviolet lithography, wherein said reinforcing region has a line width of 2 µm to 100 µm.
The method according to claim 1 or 2,
A pellicle for extreme ultraviolet lithography, further comprising a functional layer formed on an upper surface, a lower surface, or both surfaces of the pellicle layer.
The method of claim 10,
The functional layer is composed of a heat dissipation layer or reinforcement layer or a heat dissipation layer and reinforcement layer, pellicle for extreme ultraviolet lithography, characterized in that formed in a single layer or a multi-layer structure.
The method of claim 11,
The pellicle for extreme ultraviolet lithography, wherein the heat-emitting layer and the reinforcing layer each have a thickness of 2 nm to 20 nm.
The method of claim 11,
The heat dissipating layer is chromium (Cr), chromium nitride (CrN), aluminum (Al), aluminum oxide (Al2O3), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), palladium (Pd), titanium (Ti), platinum (Pt), manganese (Mn), iron (Fe), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), lithium (Li), Selenium (Se), copper (Cu), yttrium (Y), indium (In), tin (Sn), boron (B), beryllium (Be), tantalum (Ta), hafnium (Hf), niobium (Nb), Consists of at least one material of silicon (Si), ruthenium (Ru), Ru, ruthenium (Ru) compound including B, Zr, Y, Nb, Ti, La, etc., B ₄ C, SiC Or a silicide material comprising silicon (Si) in the material, or further comprising at least one of oxygen (O), nitrogen (N) and carbon (C) in the at least one material and the silicide material. A pellicle for extreme ultraviolet lithography.
The method of claim 11,
The reinforcing layer is chromium (Cr), chromium nitride (CrN), aluminum (Al), aluminum oxide (Al ₂ O ₃ ), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), Palladium (Pd), Titanium (Ti), Platinum (Pt), Manganese (Mn), Iron (Fe), Nickel (Ni), Cadmium (Cd), Zirconium (Zr), Magnesium (Mg), Lithium (Li) , Selenium (Se), copper (Cu), yttrium (Y), indium (In), tin (Sn), boron (B), beryllium (Be), tantalum (Ta), hafnium (Hf), niobium (Nb) , Silicon (Si), ruthenium (Ru), ruthenium (Ru) compound including Ru, B, Zr, Y, Nb, Ti, La, etc., B ₄ C, SiC, SiO ₂ , SixNy (x, y Is an integer), graphene (Graphene), CNT (Carbon Nano-Tube: carbon nanotubes) comprising at least one material, or the material comprises a silicide material containing silicon (Si), or Extreme ultraviolet light comprising at least one material of oxygen (O), nitrogen (N) and carbon (C) in at least one material and silicide material Pellicle for lithography.
The method of claim 1,
The etch stop layer pattern includes a silicon (Si) compound including silicon (Si), at least one of carbon (C), nitrogen (N), and oxygen (O), or silicon carbide (SiC) and boron carbide (B ₄ C). ), A ruthenium (Ru), molybdenum (Mo), graphene (graphene) pellicle for extreme ultraviolet lithography comprising at least one material.
The method of claim 1,
The etch stop layer pattern is a pellicle for extreme ultraviolet lithography, characterized in that having a thickness of 10nm to 500nm.
Preparing a substrate including a support layer, an etch stop layer and a pellicle layer;
Forming an ion implantation mask layer on the upper surface of the substrate and performing a patterning process to form an ion implantation mask pattern including a pattern exposing a portion of the pellicle layer;
Doping at least one of boron, phosphorus, arsenic, yttrium, zirconium, niobium, and molybdenum to some of the pellicle layers exposed between the patterns to form a reinforcement region having regions having different mechanical strength from other portions;
Removing the ion implantation mask pattern and forming an etching mask layer on both sides of the substrate;
Forming a photoresist film on the bottom surface of the substrate and performing a patterning process to form a photoresist film pattern;
Forming patterns of the lower thin film layer exposing the support layer by sequentially etching the etch mask layer, the pellicle layer, and the etch stop layer under the support layer using the photoresist pattern as an etch mask;
Removing the photoresist layer pattern, and forming a support layer pattern exposing the etch stop layer by using the etch mask pattern as an etch mask;
Removing an etch mask layer on the substrate, an etch mask pattern on the substrate, and an exposed etch stop layer;
A pellicle manufacturing method for extreme ultraviolet lithography comprising a.
Preparing a substrate including a support layer, an etch stop layer and a pellicle layer;
Forming an ion implantation mask layer on the upper surface of the substrate and performing a patterning process to form an ion implantation mask pattern including a pattern exposing a portion of the pellicle layer;
Doping at least one of boron, phosphorus, arsenic, yttrium, zirconium, niobium, and molybdenum to some of the pellicle layers exposed between the patterns to form a reinforcement region having regions having different mechanical strength from other portions;
Removing the pellicle layer and the etch stop layer under the support layer through an etching process after removing the ion implantation mask pattern;
Adhering a frame layer to a pellicle layer including a reinforcement region on an upper surface of the substrate;
Removing the support layer and the etch stop layer on the lower surface of the substrate;
A pellicle manufacturing method for extreme ultraviolet lithography comprising a.
The method of claim 17,
The etching mask layer may include a silicon (Si) compound, silicon carbide (SiC), or boron carbide (B ₄ C) including at least one of carbon (C), nitrogen (N), and oxygen (O) in silicon (Si). , Ruthenium (Ru), molybdenum (Mo), graphene (Graphene) pellicle manufacturing method for extreme ultraviolet lithography, characterized in that it is formed comprising a material.
The method of claim 17,
The etching mask layer is formed to have a thickness of 50nm ~ 500nm pellicle manufacturing method for extreme ultraviolet lithography.
The method of claim 17,
Forming a support layer pattern exposing the etch stop layer;
Formed through dry etching of Deep etcher, XeF2 etcher or wet etching of Potassium hydroxide (hereinafter referred to as KOH) and Tetramethylammonium hydroxide (hereinafter referred to as TMAH). A pellicle manufacturing method for extreme ultraviolet lithography, characterized in that.