KR20190096540A - Atomic layer deposition system - Google Patents

Abstract

The present invention relates to an atomic layer deposition system which aims to flexibly increase the speed for the supplying process of gas (source gases A and B, and purge gas P), which function as a major cause for spending a process time (a delay in a process time), another action to increase the speed of pumping the process gas so it is higher than the speed for supplying the process gas to prevent the relevant process gas from being unnecessarily mixed (blended) by the increase in the speed for pumping the process gas (source gases A and B, and purge gas P), or the like. Accordingly, the present invention allows the product producer side to prevent an unexpected chemical vapor deposition process from being conducted by mixing the process gas (for instance, mixing source gas A with source gas B) (that is, to normally conduct an atomic layer deposition process), but to induce a smooth solution of the problem of spending time for a unit cycle of the atomic layer deposition process by meeting the increase in the speed for supplying the process gas, thereby preventing a decrease in production volume and yield of mass-produced products or the like in accordance with a delay in the process time.

Description

Atomic layer deposition system

The present invention relates to an atomic layer deposition system, and more particularly, the supply rate of the process gas (source gas A, source gas B, purge gas P) that acts as a major cause of the process time required (process time delay) In order to prevent unnecessary mixing (mixing) of the process gas by increasing the supply speed of the process gas (source gas A, source gas B, purge gas P), It is possible to flexibly take measures to adjust faster than the supply speed of the process gas, etc., so that on the product producer side, the process gas mixture (for example, the mixture of the source gas A and the source gas B) is not predicted. While avoiding undesired chemical vapor deposition processes (i.e., proceeding with the atomic layer deposition process normally), the unit cycle time of the atomic layer deposition process can be adjusted according to the increase in the process gas supply rate. By induction to smoothly solve the problem, in the end, without difficulty, to a product production decreased damage, atomic layer deposition system to guide to effectively avoid the mass production yield decreases damage such as in accordance with the processing time delay.

Recently, with the rapid development of semiconductor technology, various types of atomic layer deposition systems have been widely developed / distributed.

For example, Korean Patent Publication No. 10-2006-13282 (name: process gas exhaust method and atomic layer stacking method and atomic layer stacking apparatus using the same) (published on Feb. 2006), Korea Patent Publication No. 10-2017 -21210 (Name: Composition Matched Curtain Gas Mixtures for Edge Uniformity Adjustment in Alternative ALD Reactors) (published Feb. 7, 2017), Korean Patent No. 10-795487 (Name: Laminar Flow Control System and Chemical Vapor Deposition Reactor with the same) (published Jan. 6, 2008), Korean Patent No. 10-1536257 (name: horizontal flow deposition apparatus and deposition method using the same) (published July 7, 2015), US registered patent 5711811 (name: Apparatus and Method for Thin Film Growth) (registered on Feb. 7, 1998) discloses in more detail one example of such conventional atomic layer deposition systems.

On the other hand, under such a conventional system, as shown in FIG. 1, the atomic layer deposition system 1 includes an atomic layer deposition target substrate W, a gas supply port 7, a gas pumping port 3, and the like. Gas chamber (5) for storing process chamber (C), process gas, for example, source gas A (G1), source gas B (G2), purge gas (G3), gas supply opening and closing valve (6) Source gas A stored in the gas storage container 5 in accordance with the open / closed state of the gas supply opening / closing valve 6 while connecting the gas storage container 5 and the gas supply port 7 in the state provided with A gas supply guide line 9 for supplying (G1), source gas B (G2), purge gas (G3), etc. to the process chamber C side, and the gas supply guide in a state of being connected to the gas pumping port 3 Gene pumping process gas inside the process chamber C supplied through the line 9, that is, source gas A (G1), source gas B (G2), purge gas (G3), etc. to the outside. Process controller 8 for controlling the gas supply opening and closing valve 6, the vacuum pump 4 and the like while being electrically wired or wirelessly connected to the pump 4, the gas supply opening and closing valve 6 and the vacuum pump (4). The back is systematically combined.

Under this situation, the process controller 8 side controls the open / close state of the gas supply opening / closing valve 6, the pumping state of the vacuum pump 4, and the like, for example, " source gas A (G1) " ) And adsorbing the source gas A (G1) to the surface of the substrate W>, < purge gas P (G3) is supplied into the process chamber C to supply the source gas A ( Removing unnecessary reaction residues, unnecessary physical binders, etc. of G1)> < source gas B (G2) is supplied into the process chamber C, and the source gas B (G2) is supplied to the substrate W. And the step of supplying purge gas P (G3) to the inside of the process chamber C to remove unnecessary reaction residues, unnecessary physical binders, etc. of the source gas B (G2)>, etc. Atomic layer deposition process by repeating a unit cycle of a plurality of times (for example, 10 unit cycles to 1000 unit cycles) Atomic layer vapor-deposited film of a desired thickness on a target substrate (W), thereby forming.

Under such a conventional system, as described above, in the process controller 8 side, an atomic layer deposition process unit cycle (source gas A supply → purge gas P supply → which inevitably takes a certain time (for example, 10 seconds to 20 seconds)). Source gas B supply → purge gas P supply) is repeatedly performed a plurality of times (for example, 10 unit cycles to 1000 unit cycles) to form an atomic layer deposition film on the substrate W. In this case, Unless further action is taken, the overall process time is lengthened, and as a result, the overall product yield is greatly reduced, and the overall product yield is greatly reduced.

Of course, the damage of the product yield decrease, the yield loss of the product mass production, etc. will become more serious as the size of the substrate (W) becomes larger.

One way to solve this problem is to adjust the speed of supply of process gas (source gas A, source gas B, purge gas P) faster, which is the main cause of process time lag (process time delay). This can be sought.

However, as illustrated in FIG. 2, when the supply gas V2 of the process gas, that is, the source gas A (G1), the source gas B (G2), or the like is rapidly adjusted without any action, the vacuum pump 4 is applied to the vacuum pump 4. Process gas pumping speed (V1) is not able to support the supply speed (V2) of the source gas A (G1), source gas B (G2), purge gas P, and so on, eventually, source gas A (G1), source gas On the B (G2) side, it is stagnant in the process chamber (C), causing serious problems of mixing (mixing with each other).

Of course, when the source gas A (G1), the source gas B (G2), etc. are stagnated in the process chamber (C) and mixed with each other, the chemical vapor deposition, not the atomic layer deposition process (ALD process) on the substrate (W) side, Inevitably undergoing the process (CVD process), the product producer can not form the desired atomic layer on the substrate (W) at all.

On the other hand, under the above-mentioned background, Korean Patent Publication No. 10-2016-105497 (name: film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition) (published on June 9, 2016) <each source The gas supply nozzles are individually installed, arranged in parallel, and the substrate is placed under the parallel nozzle while supplying source gas and purge gas continuously, and then the parallel nozzles are moved or the substrate is moved to process each process. Technology> to allow the staff to proceed sequentially.

However, the technique proposed in Korean Patent Laid-Open Publication No. 10-2016-105497, for example, since the nozzle or the substrate must be reciprocated and rotated by the number of process cycles in the process chamber, particle generation due to this inevitably occurs. The problem is that the quality / characteristics of the resulting thin film are seriously degraded, and that the nozzle / substrate must be rotated / moved, so that the overall process speed may be limited to the mechanical / physical conditions of the instruments. Problems that can only be made>, <Problems that can not be applied to the square panel for display because the nozzle or the substrate must be rotated>, <Problem to add a complicated system for moving the nozzle>, <One at both ends Since only the source gas is supplied, it becomes difficult to form a uniform thin film over the entire substrate> Due to the same serious problems, a lot of people are forced to immediately apply the Republic of Korea Patent Publication No. 10-2016-105497 to the actual process without any action.

In short, under the conventional system, unless the time-consuming problem of the unit cycle of the atomic layer deposition process is solved smoothly, the product producer may incur various damages (e.g., lower product yield, lower yield of product, etc.). You will have no choice but to accept it.

Korean Patent Publication No. 10-2016-105497 (name: film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition) (published Sep. 2016) Republic of Korea Patent Publication No. 10-2006-13282 (Name: process gas exhaust method, atomic layer stacking method and atomic layer stacking device using the same) (published Feb. 2006) Korean Patent Publication No. 10-2017-21210 (Name: Composition matched curtain gas mixtures for edge uniformity adjustment in alternative ALD reactors) (published Feb. 7, 2017) Republic of Korea Patent No. 10-795487 (Name: Laminar flow control device and chemical vapor deposition reactor equipped with the same) (August 1, 2008) Republic of Korea Patent No. 10-1536257 (Name: horizontal flow deposition apparatus and deposition method using the same) (2015.7.13. US Patent No. 5711811 (Name: Apparatus and Method for Thin Film Growth) (registered as of Feb. 1998)

Therefore, the object of the present invention is <action to adjust the supply speed of the process gas (source gas A, source gas B, purge gas P) acting as a major cause of the process time required (process time delay)>, <process In order to prevent the process gas from being unnecessarily mixed (mixed) by increasing the supply speed of the gas (source gas A, source gas B, purge gas P), the pumping speed of the process gas is adjusted faster than that of the process gas. And the like, whereby an unexpected chemical vapor deposition process is performed by mixing process gas (eg, mixing of source gas A and source gas B) on the product producer side. While avoiding (i.e., proceeding with the atomic layer deposition process normally), it is possible to smoothly solve the time-consuming problem of the atomic layer deposition process unit cycle in accordance with the increase in the process gas supply speed. Also allows to guide, to the end, effectively avoid without difficulty, the product yield decreases damage according to the process time delay, such as by mass production yield decreases damage.

Other objects of the present invention will become more apparent from the following detailed description and the accompanying drawings.

In order to achieve the above object, the present invention includes a process chamber having an atomic layer deposition target substrate, a gas supply port, and a gas pumping port; A gas storage container for storing a process gas; A gas supply guide line connecting the gas storage container and the gas supply port with a gas supply opening / closing valve; A vacuum pump that pumps the process gas inside the process chamber supplied through the gas supply guide line to the outside while being connected to the gas pumping port; And a process controller electrically connected to the gas supply on / off valve and the vacuum pump to control the gas supply on / off valve and the vacuum pump to control the supply speed and the pumping speed of the process gas. Disclosed is an atomic layer deposition system characterized by controlling the gas supply opening / closing valve and the vacuum pump so that the pumping speed of the gas is faster than the supplying speed of the process gas.

In another aspect of the present invention, there is provided a process chamber platform comprising: an independent process chamber each having an atomic layer deposition target substrate, a gas supply port, and a gas pumping port; A gas storage container for storing a process gas; A gas supply guide line which connects the gas storage container and each process chamber side gas supply port with a gas supply on / off valve; A vacuum pump for pumping the process gas inside each process chamber supplied through the gas supply guide line to the outside while being connected to each process chamber side gas pumping port; And a process controller electrically connected to the gas supply on / off valve and the vacuum pump to control the gas supply on / off valve and the vacuum pump to control the supply speed and the pumping speed of the process gas. Disclosed is an atomic layer deposition system characterized by controlling the gas supply opening / closing valve and the vacuum pump so that the pumping speed of the gas is faster than the supplying speed of the process gas.

Furthermore, in another aspect of the present invention, a process of providing a gas supply port and a gas pumping port corresponding to each atomic layer deposition target substrate in a state in which a plurality of atomic layer deposition target substrates are stacked in multiple layers in a single chamber space. A chamber; A gas storage container for storing a process gas; A gas supply guide line connecting the gas storage container and each gas supply port with a gas supply on / off valve; A vacuum pump for pumping the process gas inside the process chamber supplied through the gas supply guide line to the outside in a state connected to each gas pumping port; And a process controller electrically connected to the gas supply on / off valve and the vacuum pump to control the gas supply on / off valve and the vacuum pump to control the supply speed and the pumping speed of the process gas. Disclosed is an atomic layer deposition system characterized by controlling the gas supply opening / closing valve and the vacuum pump so that the pumping speed of the gas is faster than the supplying speed of the process gas.

In the present invention, <measures to more quickly adjust the feed rate of the process gas (source gas A, source gas B, purge gas P) acting as the main cause of the process time required (process time delay)>, <process gas (source gas In order to prevent unnecessary mixing (mixing) of the process gas due to an increase in the supply speed of A, source gas B, and purge gas P), the pumping speed of the process gas is adjusted faster than the process gas supply speed>, etc. In the implementation environment of the present invention, the unexpectedly chemical vapor deposition process is performed by mixing process gas (for example, mixing of source gas A and source gas B) on the product producer side. While avoiding (i.e., proceeding with the atomic layer deposition process normally), it is possible to smooth the time-consuming problem of the unit cycle of the atomic layer deposition process in accordance with the increase in the supply speed of the process gas. Able to be, it is possible to end, effectively avoid without difficulty, the product yield decreases damage of the process delay time, mass production yield decreases damage and the like.

1 conceptually illustrates an atomic layer deposition system according to the prior art;
Figure 2 is an exemplary diagram conceptually showing a supply flow pattern of the process gas according to the prior art.
3 conceptually illustrates an atomic layer deposition system in accordance with one embodiment of the present invention.
4 is an exemplary view conceptually illustrating a supply / pumping flow pattern of a process gas according to an exemplary embodiment of the present invention.
5 conceptually illustrates an atomic layer deposition system in accordance with another embodiment of the present invention.
6 is an exemplary view conceptually showing a supply / pumping flow pattern of a process gas according to another embodiment of the present invention.
7 is an exemplary diagram conceptually illustrating an atomic layer deposition system according to another embodiment of the present invention.
8 is an exemplary view conceptually showing a supply / pumping flow pattern of a process gas according to another embodiment of the present invention.
9 to 14 are conceptual views conceptually showing an arrangement pattern of a gas supply port and a gas pumping port according to each embodiment of the present invention.
15 to 18 are conceptual views conceptually showing the internal width change pattern of the process chamber according to each embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings, the atomic layer deposition system according to the present invention will be described in more detail.

As shown in FIG. 3, an atomic layer deposition system 100 according to an embodiment of the present invention is a process including an atomic layer deposition target substrate W, a gas supply port 107, a gas pumping port 103, and the like. The gas storage container 105 and the gas supply opening / closing valve 106 for storing the chamber C, the process gas, for example, the source gas A (G1), the source gas B (G2), the purge gas (G3), etc. In the equipped state, while connecting the gas storage container 105 and the gas supply port 107, the source gas A (stored in the gas storage container 105) according to the open / closed state of the gas supply opening / closing valve 106 ( A gas supply guide line 109 for supplying G1), a source gas B (G2), and a purge gas G3 to the process chamber C side, and the gas supply guide line in a state of being connected to the gas pumping port 103. Process gas inside the process chamber C, ie, source gas A (G1), source gas B (G2), purge gas (G3), etc. supplied through 109 to the outside Process controller for controlling the gas supply opening and closing valve 106, the vacuum pump 104 and the like while being electrically wired or wirelessly connected to the vacuum pump 104, the gas supply opening and closing valve 106 and the vacuum pump 104 ( 108) takes a systematic combination.

Even in this situation, the process controller 108 controls the open / closed state of the gas supply opening / closing valve 106, the pumping state of the vacuum pump 104, and the like. And supplying the source gas A (G1) to the surface of the substrate W by supplying to the inside of C)> &lt; <purge gas P (G3) is supplied into the process chamber C to supply the source gas A Removing unnecessary reaction residues, unnecessary physical binders, etc. of (G1)> <source gas B (G2) is supplied into the process chamber C, and the source gas B (G2) is supplied to the substrate W; ), <Step of supplying purge gas P (G3) to the inside of the process chamber C to remove unnecessary reaction residues of the source gas B (G2), unnecessary physical binding substances, etc.> By repeating the atomic layer deposition process unit cycle consisting of a plurality of times (for example, 10 unit cycles to 1000 unit cycles) repeatedly, Thereby forming an atomic layer deposited films of the desired thickness on the layer deposition target substrate (W).

Of course, even under such a system of the present invention, an atomic layer deposition process unit cycle (source gas A supply → purge gas P supply → source gas B supply → purge gas P supply) is performed a plurality of times (for example, 10 unit cycles to 1000 unit cycles). ) Repeatedly proceeds to form an atomic layer deposition film on the substrate W, so unless the action is taken, the overall process time is long on the product producer side, the damage is greatly reduced overall product yield As a result, the company is forced to bear the damage that the overall product yield is drastically reduced.

Under such a sensitive situation, in the present invention, as shown in FIG. 4, the supply rate of process gas (source gas A, source gas B, purge gas P) serving as a main cause of process time required (process time delay) ( Take measures to adjust V2) more quickly (e.g., to quickly adjust the feed rate of process gas (V2) to several tens of msec or less), as well as <process gases (source gas A, source gas B, purge) Measures to adjust the pumping speed (V1) of the process gas faster than the feed rate (V2) of the process gas in order to prevent unnecessary mixing (mixing) of the process gas due to the increase in the supply rate (V2) of the gas P) > To be unique.

Under such measures of the present invention, the process controller 108 controls the opening / closing state of the gas supply opening / closing valve 106 so that the supply speed V2 of the process gas (source gas A, source gas B, purge gas P) can be adjusted. In addition to the process of adjusting quickly to msec or less, and controlling the pumping state of the vacuum pump 104, to proceed with the procedure of adjusting the pumping speed (V1) of the process gas faster than the supply speed (V2) of the process gas do.

At this time, the process controller 108 controls the gas supply opening / closing valve 106 and the vacuum pump 104 such that the pumping speed V1 of the process gas is 10 times to 100,000 times faster than the supply speed V2 of the process gas. Done. In this case, the speed difference magnification of 10 times to 100000 times is, for example, <pressure at the start point of the process gas supply>, <initial pressure inside the process chamber C>, <amount of process gas supply>, <process gas Kind>, <pressure at the position immediately before the process gas inside the process chamber (C) exits to the vacuum pump 104> and the like can be flexibly selected.

In addition to the above measures, in the present invention, the process gas supplied into the process chamber C may pass through the surface of the atomic layer deposition target substrate W in a laminar flow or knudsen flow. In order to make the inner width (H) of the process chamber (C) as narrow as possible to 1mm ~ 10mm to take measures.

)에 맞추어, 시간에 따른 농도의 변화를 전혀 겪지 않으면서(즉, 시간이 지나도, 서로 섞이거나 혼합되지 않으면서), 가스 펌핑 포트(103) 쪽을 향해 빠른 흐름을 보일 수 있게 된다(도 4 참조). Of course, through the above-described measures, the gas supply on-off valve 106 and the vacuum pump 104 is controlled so that the pumping speed (V1) of the process gas is 10 times to 100,000 times faster than the supply speed (V2) of the process gas. In this case, the X-axis and Y-axis spaces of the process chamber C (for reference, the Z-axis space of the process chamber C may define an inner width H of the process chamber C side) based on the three-dimensional rectangular coordinate system. Blocked by the inner wall can be significantly expanded according to the pumping operation time of the vacuum pump 104 (for reference, under the vacuum system, if the pumping speed (V1) of the vacuum pump 104 increases, proportional to it) In the process chamber C side, the same effect as that of the self space is expanded), ie, the process gas supplied into the process chamber C, that is, source gas A (G1) and source gas B (G2). On the purge gas P (G3) side, Pick's second law of diffusion (i.e., the change in the concentration of particles with Law of second derivative,

), It is possible to show a rapid flow towards the gas pumping port 103 without experiencing any change in concentration over time (i.e., mixing or not mixing with each other over time) (FIG. 4). Reference).

In this case, on the side of the process gas supplied into the process chamber C, the source gas A (G1), the source gas B (G2), and the like are completely separated by the purge gas P (G3) (i.e., In a stable, non-mixing state, in a series of lateral laminar flows, which flow rapidly toward the gas pumping port 103 (see FIG. 4).

In short, according to one embodiment of the present invention described above, the supply speed V2 of the process gas (source gas A, source gas B, purge gas P) serving as a main cause of the process time required (process time delay) is adjusted more quickly. (E.g., a step of quickly adjusting the feed rate V2 of the process gas to several tens of msec or less)>, under the implementation environment of the present invention, the supply rate of the process gas (V2) In line with the increase, it is possible to smoothly solve the time-consuming problem of the unit cycle of the atomic layer deposition process, and in the end, it is possible to effectively avoid the loss of product yield and the yield loss of the product due to the delay of the process without any difficulty. Will be.

In addition, in one embodiment of the present invention, in order to prevent the process gas from being unnecessarily mixed (mixed) by increasing the supply speed V2 of the process gas (source gas A, source gas B, purge gas P). Since the pumping speed V1 of the gas is controlled to be faster than the supply speed V2 of the process gas, the process speed of supply of the process gas is greatly increased on the product producer side under the implementation environment of the present invention. Even under a sensitive situation, it is possible to easily avoid the problem that the process gas mixture (for example, the mixing of the source gas A and the source gas B) causes an unexpected chemical vapor deposition process to proceed. In one embodiment of the present invention, the atomic layer deposition process can be normally performed even under a sensitive situation in which the supply gas V of the process gas is greatly increased on the product producer side.

Of course, since one embodiment of the present invention does not perform rotation / reciprocation of the nozzle / substrate at all, under the implementation environment of the present invention, on the product production side, for example, <quality of thin film due to particle generation / Problem of deterioration of properties>, <Problem of mechanical / physical limitation of process speed due to rotation / reciprocation of nozzle / substrate>, <Problem of not applying system to square board for display>, <Problem for rotating / moving nozzle / substrate Problems that require the addition of complex systems>, and <Difficult to form uniform thin films> can be easily avoided.

On the other hand, as shown in Figure 5, in another embodiment of the present invention has a structure of the process chamber <atomic layer deposition target substrate (W) and the gas supply port 107, and the gas pumping port 103, respectively Process chamber platform (P)> in which independent process chambers (C1, C2, ...) are stacked in multiple layers (i.e., depending on the situation, each process chamber (C1, C2, ...) may be operated under the same or individual conditions. Change measures are taken.

Of course, in another embodiment of the present invention, as shown in Figure 6, the product production subject, the process gas (source gas A, source gas B, purge gas that acts as a major cause of <process time required (process time delay)) In addition to taking measures to adjust the feed rate (V2) of P) faster (e.g., to adjust the feed rate (V2) of the process gas faster than several tens of msec or less)> and the process gas (source gas A). In order to prevent the process gas from being unnecessarily mixed (mixed) by increasing the supply speed V2 of the source gas B and the purge gas P, the pumping speed V1 of the process gas is supplied to the process gas V2. It is unique to take measures to control faster than).

Even under such measures of the present invention, the process controller 108 controls the opening / closing state of the gas supply opening / closing valve 106 to adjust the supply speed V2 of the process gas (source gas A, source gas B, purge gas P). In addition to the process of adjusting quickly to several tens of msec or less, and controlling the pumping state of the vacuum pump 104, the process of adjusting the pumping speed (V1) of the process gas faster than the supply speed (V2) of the process gas Done.

In this case, the gas supply opening / closing valve 106 and the vacuum pump 104 are disposed on the process controller 108 so that the pumping speed V1 of the process gas is 10 to 100,000 times faster than the supply speed V2 of the process gas. Control. Also in this case, the speed difference magnification of 10 times to 100000 times is, for example, <pressure at the start point of the process gas supply>, <initial pressure inside the process chambers C1, C2, ...>, < It can be flexibly selected according to the supply amount>, <type of process gas>, <pressure at the position just before the process gas inside the process chambers C1, C2, ... exits to the vacuum pump 104>, and the like.

Further, in addition to the above measures, in the present invention, the process gas supplied into the process chambers C1, C2, ... is atomic layer deposition target substrate W in a laminar flow or knudsen flow. In order to pass through the surface of the process chamber (C1, C2, ...), the internal width (H) of the process chamber (1) to 10mm narrower to take measures to take.

)에 맞추어, 시간에 따른 농도의 변화를 전혀 겪지 않으면서(즉, 시간이 지나도, 서로 섞이거나 혼합되지 않으면서), 가스 펌핑 포트(103) 쪽을 향해 빠른 흐름을 보일 수 있게 된다(도 6 참조). Of course, through the above-described measures, the gas supply on-off valve 106 and the vacuum pump 104 is controlled so that the pumping speed (V1) of the process gas is 10 times to 100,000 times faster than the supply speed (V2) of the process gas. In this case, the X-axis and Y-axis spaces of the process chambers C1, C2, ... are referred to based on the three-dimensional rectangular coordinate system (for reference, the Z-axis spaces of the process chambers C1, C2, ...) Blocked by an inner wall defining the inner width (H) of the side of C2 can be significantly expanded in accordance with the pumping operation time of the vacuum pump 104 (for reference, under a vacuum system, a vacuum pump ( When the pumping speed V1 of 104 is increased, the process chambers C1, C2, ... have the same effect as the self space is expanded on the side of the process chambers, and eventually, the process chambers C1, C2, ... The second diffusion law of pick (i.e., particles with time) on the process gas supplied to the inside of the ..., ie, source gas A (G1), source gas B (G2), and purge gas P (G3). Sea bass The law of degree change is the second derivative of the particle concentration change with distance,

), It is possible to show a rapid flow toward the gas pumping port 103 without experiencing any change in concentration over time (i.e., mixing or not mixing with each other over time) (FIG. 6). Reference).

Also in this case, on the process gas side supplied into the process chambers C1, C2, ..., the source gas A (G1), the source gas B (G2), and the like are completely separated by the purge gas P (G3). While taking shape (ie, achieving a stable, non-mixing state), a series of lateral laminar flows occur, which flows rapidly toward the gas pumping port 103.

In short, in another embodiment of the present invention described above, the supply speed V2 of the process gas (source gas A, source gas B, purge gas P) serving as a main cause of the process time required (process time delay) is adjusted more quickly. (E.g., a step of rapidly adjusting the feed rate V2 of the process gas to several tens of msec or less)>, the feed rate of the process gas is supplied on the product producer side even under another implementation environment of the present invention. (V2) With the increase, it is possible to smoothly solve the time-consuming problem of the unit cycle of the atomic layer deposition process, and thus, effectively avoid the damage of the product yield and the yield of the product mass production by the delay of the process time without any difficulty. You can do it.

In addition, in another embodiment of the present invention, in order to prevent the process gas from being unnecessarily mixed (mixed) by increasing the supply speed V2 of the process gas (source gas A, source gas B, purge gas P), Since the action of controlling the pumping speed V1 of the process gas faster than the supply speed V2 of the process gas is unique, the process gas supply rate V on the production side of the product is subject to the implementation environment of the present invention. Even in a sensitive situation where the number is increasing significantly, it is possible to easily avoid the problem of an unexpected chemical vapor deposition process due to the mixing of process gases (for example, the mixing of source gas A and source gas B). (I.e., under another embodiment of the present invention, the atomic layer deposition process can normally proceed even under a sensitive situation in which the supply gas V of the process gas is greatly increased on the product producer side).

Of course, even in this other embodiment of the present invention, since no rotation / reciprocating movement of the nozzle / substrate is performed at all, even in another implementation environment of the present invention, on the product producer side, for example, <thin film according to particle generation Problem of deterioration of quality / characteristics>, <Problem of mechanical / physical limitation of process speed due to rotation / reciprocating movement of nozzle / substrate>, <Problem of not applying system to square panel for display>, <Rotation / The problem of adding a complex system for movement>, and <a problem of difficulty in forming a uniform thin film> can be easily avoided.

Meanwhile, as shown in FIG. 7, in another embodiment of the present invention, the structure of the process chamber is << a plurality of atomic layer deposition target substrates W1, W2, W3 ... in a single chamber space S. Process chamber C having gas supply ports 107 and gas pumping ports 103 corresponding to the respective atomic layer deposition target substrates W1, W2, W3. ), I.e., depending on the situation, it is necessary to take changed measures to change the configuration to a plurality of substrates (W1, W2, W3 ...).

Of course, as shown in Figure 8, even in this embodiment of the present invention, the product production subject side process gas (source gas A, source gas B, purge acting as a major cause of <process time required (process time delay) In addition to taking measures to adjust the supply speed V2 of the gas P more quickly (e.g., to quickly adjust the supply speed V2 of the process gas to several tens of msec or less), and the process gas (source gas). In order to prevent the process gas from being unnecessarily mixed (mixed) by increasing the supply speed V2 of the A, source gas B, and purge gas P, the pumping speed V1 of the process gas is changed to the process speed of the process gas ( V2), and the measures to control more quickly> will be unique.

Even under such another measure of the present invention, the process controller 108 controls the opening / closing state of the gas supply opening / closing valve 106 to supply the process speed V2 of the process gas (source gas A, source gas B, purge gas P). ) To control the pumping state of the vacuum pump 104, and to control the pumping speed (V1) of the process gas faster than the supply speed (V2) of the process gas Will proceed.

At this time, the process controller 108 controls the gas supply opening / closing valve 106 and the vacuum pump 104 such that the pumping speed V1 of the process gas is 10 times to 100,000 times faster than the supply speed V2 of the process gas. Done. In this case, the speed difference magnification of 10 times to 100,000 times may be, for example, <pressure at the start point of the process gas supply>, <initial pressure in the single chamber space S on the process chamber C side>, < Supply amount>, <type of process gas>, <pressure at the position just before the process gas inside the single chamber space S on the process chamber C to the vacuum pump 104>, etc. do.

In addition to the above measures, in the present invention, the process gas supplied into the process chamber C is subjected to atomic layer deposition target substrates W1, W2, W3 ... with laminar flow or knudsen flow. In order to pass through the surface of the substrate, measures are taken to narrow the inner width H of each of the process chambers C, which isolate the substrates W1, W2, W3, ..., from 1 mm to 10 mm.

)에 맞추어, 시간에 따른 농도의 변화를 전혀 겪지 않으면서(즉, 시간이 지나도, 서로 섞이거나 혼합되지 않으면서), 가스 펌핑 포트(103) 쪽을 향해 빠른 흐름을 보일 수 있게 된다(도 4 참조). Of course, through the above-described measures, the gas supply on-off valve 106 and the vacuum pump 104 is controlled so that the pumping speed (V1) of the process gas is 10 times to 100,000 times faster than the supply speed (V2) of the process gas. In this case, the X-axis and Y-axis spaces of the substrate isolation regions on the process chamber C side based on the three-dimensional rectangular coordinate system (for reference, the Z-axis spaces of the substrate isolation regions on the process chamber C side have an internal width (H). Obstructed by an inner wall defining a) can be greatly expanded according to the pumping operation time of the vacuum pump 104 (for reference, under a vacuum system, the pumping speed V1 of the vacuum pump 104 is increased). In this case, the same effect as that of the self-space is expanded on each substrate isolation region side of the process chamber C), ie, the process gas supplied into each substrate isolation region on the process chamber C side, that is, Pick's second law of diffusion on the source gas A (G1), source gas B (G2), and purge gas P (G3) sides (Ie, the change in particle concentration over time is represented by the second derivative of the change in particle concentration over distance,

), It is possible to show a rapid flow towards the gas pumping port 103 without experiencing any change in concentration over time (i.e., mixing or not mixing with each other over time) (FIG. 4). Reference).

In this case, a stable state in which source gas A (G1), source gas B (G2), and the like are completely separated by the purge gas P (G3) on the process gas side supplied to each substrate isolation region on the process chamber C side. (I.e., achieving a stable non-mixing state), a series of laminar flows is made, which flows rapidly toward the gas pumping port 103.

In other words, in another embodiment of the present invention described above, the supply rate V2 of the process gas (source gas A, source gas B, purge gas P) serving as the main cause of the process time required (process time delay) is further determined. Because it takes a uniquely fast action (for example, a fast adjustment of the process gas supply rate V2 to several tens of msec or less)>, even under another implementation environment of the present invention, on the product producer side, the process gas As the supply speed (V2) increases, the time-consuming problem of the unit cycle of the atomic layer deposition process can be solved smoothly. Consequently, there is no difficulty, and the product yield decreases due to the delay in the process time, and the product yield decreases. Can be effectively avoided.

Further, in another embodiment of the present invention, in order to prevent the process gas from being unnecessarily mixed (mixed) by increasing the supply speed V2 of the process gas (source gas A, source gas B, purge gas P). Since the action of controlling the pumping speed V1 of the process gas faster than the supply speed V2 of the process gas is uniquely taken, under the embodiment of the present invention, the supply rate of the process gas may be Even under a sensitive situation in which V) increases significantly, it is easy to avoid the problem of undesired chemical vapor deposition due to the mixing of process gases (eg, mixing of source gas A and source gas B). (I.e., under another embodiment of the present invention, the atomic layer deposition process can proceed normally even in a sensitive situation in which the supply gas V of the process gas increases significantly on the product producer side. Be).

Of course, even in this embodiment of the present invention, since rotation / reciprocating of the nozzle / substrate is not performed at all, even in another implementation environment of the present invention, the product producer may, for example, Problem of deterioration of quality / characteristics of thin film>, <Problem of mechanical / physical limitation of process speed due to rotation / reciprocating movement of nozzle / substrate>, <Problem of not applying system to rectangular panel for display>, The problem of adding a complicated system for rotation / movement>, and the problem of difficulty in forming a uniform thin film> can be easily avoided.

This invention can be variously modified depending on the situation.

For example, as shown in FIGS. 9 to 14, in the present invention, the gas supply port 107 and the gas pumping port 103 are disposed symmetrically at positions facing each other, or asymmetrically so as not to face each other. It is also possible to flexibly adapt the changed measures to deploy.

As another example, in the present invention, according to the situation, <a changed action of changing the supply direction and the pumping direction of the process gas>, <a changed action of installing a plurality of the gas supply port 107 and the gas pumping port 103>, <process Changed action to change the shape of the chamber C and the substrate W into a polygon containing a rectangle>, <Changed action to place the substrate W on the upper surface or the upper / lower surface of the process chamber C> , <a changed measure for additionally installing a heater for heating the substrate W around the substrate W>, <a measure for additionally installing an electrode on the upper or lower surface of the substrate W>, and <process gas Changed action to pass through plasma forming region inside process chamber C>, <Changed action to allow process gas to pass into plasma forming region outside process chamber C and then to be supplied into process chamber C > Can be flexible.

As another example, in the present invention, as shown in Figs. 15 to 18 (for reference, the drawings are exaggerated to emphasize the structural features), the gas pumping port is disposed on the side where the gas supply port 107 is disposed. Changed measures for designing the inner width of the process chamber C so that the 103 is narrower than the side where the gas is disposed>, <the side where the gas pumping port 103 is disposed is more than the side where the gas supply port 107 is disposed. Changed measures for designing the inner width of the process chamber C to be narrow>, &lt; the center side of the process chamber c is narrower or wider than the side where the gas supply port 107 and the gas pumping port 103 are arranged It is also possible to flexibly take altered measures> to design the inner width of the process chamber (C).

Of course, even under each of these changed measures, the present invention controls the supply speed of the process gas (source gas A, source gas B, purge gas P) that acts as a major cause of the process time delay (process time delay). Measures> In order to prevent the process gas from being unnecessarily mixed (mixed) by increasing the supply speed of process gas (source gas A, source gas B, purge gas P), In order to flexibly take measures to adjust faster than the supply speed, etc., under each implementation environment of the present invention, on the product producer side, by mixing process gases (for example, mixing of source gas A and source gas B), While avoiding unexpected chemical vapor deposition processes (i.e., proceeding with the atomic layer deposition process normally), the atomic layer deposition process may It is possible to smoothly solve the time-consuming problem of the cycle, and, in the end, it is possible to effectively avoid the damage of product yield degradation and the yield loss of the product due to the delay of the process without any difficulty.

The present invention is not limited to a specific field, and in various kinds of thin film manufacturing processes, it has an overall useful effect.

And, in the foregoing, specific embodiments of the present invention have been described and illustrated, but it is obvious that the present invention may be variously modified and implemented by those skilled in the art.

Such modified embodiments should not be individually understood from the technical spirit or viewpoint of the present invention, and such modified embodiments should fall within the scope of the appended claims of the present invention.

W: Substrate for Atomic Layer Deposition
C: process chamber
1,100: atomic layer deposition system
2,102: gas pumping line
3,103: gas pumping port
4,104: vacuum pump
5,105: Gas Storage Container
6,106: gas supply valve
7,107: gas supply port
8,108: process controller
9,109: gas supply line

Claims (7)

A process chamber including an atomic layer deposition target substrate, a gas supply port, and a gas pumping port;
A gas storage container for storing a process gas;
A gas supply guide line connecting the gas storage container and the gas supply port with a gas supply opening / closing valve;
A vacuum pump that pumps the process gas inside the process chamber supplied through the gas supply guide line to the outside while being connected to the gas pumping port;
And a process controller electrically connected to the gas supply on / off valve and the vacuum pump to control the gas supply on / off valve and the vacuum pump to control the supply speed and the pumping speed of the process gas.
The process controller side atomic layer deposition system characterized in that for controlling the gas supply opening and closing valve and the vacuum pump so that the pumping speed of the process gas is faster than the supply speed of the process gas. A process chamber platform having a plurality of independent process chambers each having an atomic layer deposition target substrate, a gas supply port, and a gas pumping port stacked in multiple layers;
A gas storage container for storing a process gas;
A gas supply guide line which connects the gas storage container and each process chamber side gas supply port with a gas supply on / off valve;
A vacuum pump for pumping the process gas inside each process chamber supplied through the gas supply guide line to the outside while being connected to each process chamber side gas pumping port;
And a process controller electrically connected to the gas supply on / off valve and the vacuum pump to control the gas supply on / off valve and the vacuum pump to control the supply speed and the pumping speed of the process gas.
The process controller side atomic layer deposition system characterized in that for controlling the gas supply opening and closing valve and the vacuum pump so that the pumping speed of the process gas is faster than the supply speed of the process gas. A process chamber having a plurality of atomic layer deposition target substrates stacked in multiple layers in a single chamber space, each gas supply port and gas pumping port corresponding to each atomic layer deposition target substrate;
A gas storage container for storing a process gas;
A gas supply guide line connecting the gas storage container and each gas supply port with a gas supply on / off valve;
A vacuum pump for pumping the process gas inside the process chamber supplied through the gas supply guide line to the outside in a state connected to each gas pumping port;
And a process controller electrically connected to the gas supply on / off valve and the vacuum pump to control the gas supply on / off valve and the vacuum pump to control the supply speed and the pumping speed of the process gas.
The process controller side atomic layer deposition system characterized in that for controlling the gas supply opening and closing valve and the vacuum pump so that the pumping speed of the process gas is faster than the supply speed of the process gas. The gas supply opening / closing valve and the vacuum pump of any one of claims 1 to 3, wherein the process controller controls the gas supply on / off valve and the vacuum pump so that the pumping speed of the process gas is 10 to 100000 times faster than the supply speed of the process gas. An atomic layer deposition system, characterized in that. The method according to any one of claims 1 to 3, wherein the process chamber is 1 mm so that the process gas can pass through the surface of the atomic layer deposition target substrate in a laminar flow or knudsen flow. An atomic layer deposition system, characterized by having an internal width of ˜10 mm. The inner width of the process chamber is narrower than the side where the gas supply port is disposed, or the side where the gas pumping port is arranged. Or narrower or wider than the side on which the gas supply port and the gas pumping port are arranged. The atomic layer deposition as claimed in claim 1, wherein the gas supply port and the gas pumping port are symmetrically disposed at positions facing each other or asymmetrically disposed so as not to face each other. system.

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